Detection device

Abstract

A detection device comprising: a substrate; an organic photosensor in which a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode are stacked in this order in a detection area of the substrate; an organic photovoltaic element in which a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, and a common electrode are stacked in this order in the detection area of the substrate; and a sealing film that covers the organic photosensor and the organic photovoltaic element, wherein the first lower electrode of the organic photosensor and the common electrode of the organic photovoltaic element are translucent.

Description

Detection device

[0001] The present invention relates to a detection device.

[0002] Patent Literature 1 describes a biosensor including at least three types of sensor elements. Patent Literature 1 lists, as an example of the sensor element, an optical sensor element that senses visible light and / or fluorescence using a sensing unit. This optical sensor has multiple organic photodiodes (OPDs) that use an organic semiconductor material as an active layer.

[0003] International Publication No. 2016 / 104517

[0004] The OPD used in the detection device has a structure similar to that of a photovoltaic element such as a solar cell, because an electric current flows when irradiated with light. However, even if a part of the OPD of the detection device is used as a photovoltaic element (solar cell), there is a possibility that it will not be able to generate electricity well.

[0005] An object of the present invention is to provide a detection device that includes an organic photosensor and an organic photovoltaic element and is capable of effectively detecting light and generating electricity.

[0006] A detection device according to one embodiment of the present invention includes a substrate; an organic photosensor having a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode stacked in this order in a detection region of the substrate; an organic photovoltaic element having a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, and the common electrode stacked in this order in the detection region of the substrate; and a sealing film covering the organic photosensor and the organic photovoltaic element, wherein the first lower electrode of the organic photosensor and the common electrode of the organic photovoltaic element are light-transmitting.

[0007] A detection device according to one embodiment of the present invention includes a substrate; an organic photosensor having a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode stacked in this order in a detection region of the substrate; an organic photovoltaic element having a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, a second upper electrode, and the common electrode stacked in this order in the detection region of the substrate; and a sealing film covering the organic photosensor and the organic photovoltaic element, wherein the first upper electrode and the common electrode of the organic photosensor and the second lower electrode of the organic photovoltaic element are light-transmitting, and the second upper electrode of the organic photovoltaic element is non-light-transmitting.

[0008] FIG. 1 is a schematic diagram illustrating an example of the appearance of a detection device according to an embodiment, when a finger is placed inside the detection device, as viewed from the side of the housing. FIG. 2 is a cross-sectional view taken along line II-II' in FIG. 1. FIG. 3 is a plan view schematically illustrating the detection device according to an embodiment. FIG. 4 is a plan view schematically illustrating an example of the arrangement of a light sensor and a solar cell in a detection area. FIG. 5 is a block diagram illustrating an example of the configuration of a detection device according to an embodiment. FIG. 6 is a circuit diagram illustrating a detection device according to an embodiment. FIG. 7 is a block diagram schematically illustrating an example of the configuration of a light sensor, a solar cell, a battery circuit, and a light source. FIG. 8 is a cross-sectional view taken along line VIII-VIII' in FIG. 4. FIG. 9 is a cross-sectional view showing an enlarged view of the light sensor in FIG. 8. FIG. 10 is a cross-sectional view taken along line XX' in FIG. 4. FIG. 11 is a cross-sectional view showing an enlarged view of the solar cell in FIG. 8. FIG. 12 is an explanatory diagram illustrating the relationship between detection by the light sensor of the detection device and operation of the solar cell. FIG. 13 is a cross-sectional view of a detection device according to a modified example. FIG. 14 is a cross-sectional view showing an enlarged view of the solar cell in FIG. 13.

[0009] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, for clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this disclosure and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] In this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] 1 is a schematic diagram showing an example of the appearance of a detection device according to an embodiment when a finger is placed inside the detection device as viewed from the side of a housing. FIG. 2 is a cross-sectional view taken along line II-II′ of FIG. 1.

[0012] 1 and 2 is a ring-shaped device that can be attached to and detached from the human body and is worn on a detection target Fg of the human body. In the embodiment, the detection target Fg is a finger, and may be any of the thumb, index finger, middle finger, ring finger, little finger, etc. The detection device 1 can detect biological information related to the living body from the detection target Fg attached to the detection device 1.

[0013] 2, the detection device 1 includes a housing 200, a light sensor PD (organic light sensor), a solar cell SC (organic photovoltaic element), a battery 73, and light sources 53 and 54. The housing 200 accommodates the light sensor PD, the solar cell SC, the battery 73, and the light sources 53 and 54. Components other than the housing 200, the light sensor PD, the solar cell SC, the battery 73, and the light sources 53 and 54 (for example, various boards such as the sensor board 21 (see FIG. 3)) are omitted from FIG.

[0014] The housing 200 is formed in a ring shape (annular shape) that can be attached to the subject Fg and is an attachment member that is attached to a living body. The housing 200 is formed from a housing material such as synthetic resin. The housing 200 has a first portion 201 having a light-transmitting inner circumferential surface 201a and a non-light-transmitting outer circumferential surface 201b, and a second portion 202 having a light-transmitting outer circumferential surface 202b and a non-light-transmitting inner circumferential surface 202a. When the housing 200 is attached to the subject Fg, the first portion 201 faces the anti-body of the subject Fg, and the second portion 202 is positioned on the opposite side of the anti-body of the subject Fg. Note that the anti-body of the subject Fg is the inside of the subject Fg when the hand is closed. Note that in FIG. 2, the portions of the housing 200 made of a non-light-transmitting material are shown hatched, and the portions made of a light-transmitting material are shown without hatching.

[0015] The plurality of optical sensors PD and the plurality of solar cells SC are provided along the shape of the annular housing 200. More specifically, the plurality of optical sensors PD and the plurality of solar cells SC are provided in a first portion 201 and a second portion 202 of the annular housing 200, respectively.

[0016] The plurality of optical sensors PD provided in the first portion 201 detects biological information related to a living organism from the detection target Fg (see FIG. 1). Specifically, light emitted from the light sources 53 and 54 and transmitted through or reflected by the detection target Fg (see FIG. 1) is irradiated onto the plurality of optical sensors PD through the light-transmitting inner circumferential surface 201a of the first portion 201. Furthermore, the non-light-transmitting outer circumferential surface 201b of the first portion 201 blocks natural light incident on the plurality of optical sensors PD from the outside.

[0017] The plurality of solar cells SC provided in the second portion 202 generate electricity using natural light irradiated from outside. Specifically, the natural light from outside is irradiated onto the plurality of solar cells SC through the translucent outer peripheral surface 202b of the second portion 202. Furthermore, the non-translucent inner peripheral surface 202a of the second portion 202 can prevent the natural light from outside from traveling as stray light toward the detection object Fg and the first portion 201. Alternatively, the non-translucent inner peripheral surface 202a of the second portion 202 blocks light emitted from the light sources 53 and 54 and incident on the solar cells SC of the second portion 202.

[0018] In this embodiment, the total area of ​​the optical sensors PD in the first portion 201 is larger than the total area of ​​the solar cells SC, and the total area of ​​the optical sensors PD in the second portion 202 is smaller than the total area of ​​the solar cells SC. As a result, the multiple optical sensors PD provided in the first portion 201 have higher detection sensitivity than the second portion 202 and can effectively detect biological information of the object Fg (see FIG. 1 ). Furthermore, the multiple solar cells SC provided in the second portion 202 have higher power generation efficiency than the first portion 201 and can effectively generate power using natural light from the outside. Alternatively, the optical sensors PD may be provided in the first portion 201, and the solar cells SC may be provided in the second portion 202.

[0019] The light sources 53 and 54 are provided in positions inside the housing 200 that do not overlap with the multiple optical sensors PD and the multiple solar cells SC. Note that the positions of the light sources 53 and 54 shown in Fig. 2 are merely examples and can be changed as appropriate. In other words, the light sources 53 and 54 may be arranged in any position as long as the light emitted from the light sources 53 and 54 and transmitted through or reflected by the detection object Fg is appropriately irradiated onto the optical sensor PD.

[0020] The battery 73 is a secondary battery that can be repeatedly charged and discharged. The battery 73 is, for example, a film-type lithium-ion battery. The battery 73 is charged with power generated by the multiple solar cells SC. The battery 73 also supplies stored power to components that require power for detection by the multiple optical sensors PD. The battery 73 supplies power to, for example, the light sources 53 and 54. The battery 73 is disposed between the outer peripheral surface 201b of the first portion 201 and the multiple optical sensors PD and the multiple solar cells SC. The battery 73 may be disposed in any position that does not interfere with detection by the optical sensors PD and power generation by the solar cells SC, specifically, as long as it does not block light from the light sources 53 and 54 or natural light from the outside.

[0021] Fig. 3 is a plan view schematically showing the detection device according to the embodiment. Fig. 4 is a plan view schematically showing an example of the arrangement of the optical sensors and solar cells in the detection area. Figs. 3 and 4 are plan views schematically showing the sensor substrate 21 in a flat state before being housed in the housing 200.

[0022] 3 , the detection device 1 includes a sensor substrate 21 (substrate), a sensor unit 10, a gate line drive circuit 15, a signal line selection circuit 16, a solar cell drive circuit 17, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0023] The sensor substrate 21 is electrically connected to a control substrate 121 via a wiring substrate 71. The wiring substrate 71 and the control substrate 121 are, for example, flexible printed circuit boards. The wiring substrate 71 is provided with a detection circuit 48. The control substrate 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, the signal line selection circuit 16, and the solar cell driving circuit 17 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 6), to the sensor unit 10, the gate line driving circuit 15, the signal line selection circuit 16, and the solar cell driving circuit 17. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0024] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where the multiple optical sensors PD and multiple solar cells SC (see FIG. 4 ) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the outer edge of the sensor substrate 21, where the multiple optical sensors PD and multiple solar cells SC are not provided.

[0025] The detection area AA has a first detection area AA1 and a second detection area AA2. The first detection area AA1 and the second detection area AA2 are arranged adjacent to each other in the second direction Dy. The first detection area AA1 is disposed in the first portion 201 of the housing 200, and the second detection area AA2 is disposed in the second portion 202 of the housing 200. In other words, the second direction Dy of the sensor substrate 21 is disposed along the circumferential direction of the housing 200.

[0026] In the following description, the first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction to the main surface of the sensor substrate 21. Furthermore, "planar view" refers to the positional relationship when the sensor substrate 21 is unfolded in a planar state and viewed from a direction perpendicular to the sensor substrate 21.

[0027] As shown in Fig. 4, a plurality of sensor pixels PX and a plurality of solar cell pixels PXA are arranged in a matrix in the detection area AA. The plurality of sensor pixels PX include photosensors PD. The plurality of solar cell pixels PXA include solar cells SC. The arrangement density (area) of the plurality of sensor pixels PX and the arrangement density (area) of the plurality of solar cell pixels PXA in the first detection area AA1 differs from the arrangement density (area) of the plurality of sensor pixels PX and the arrangement density (area) of the plurality of solar cell pixels PXA in the second detection area AA2.

[0028] More specifically, when four pixels in two rows and two columns are used as a reference unit, in the first detection area AA1, one reference unit includes three sensor pixels PX (photosensor PD) and one solar cell pixel PXA (solar cell SC). In the second detection area AA2, one reference unit includes one sensor pixel PX (photosensor PD) and three solar cell pixels PXA (solar cell SC). As a result, when the sensor substrate 21 is housed in the housing 200, as described above, the total area of ​​the photosensors PD in the first portion 201 is larger than the total area of ​​the solar cells SC, and the total area of ​​the photosensors PD in the second portion 202 is smaller than the total area of ​​the solar cells SC.

[0029] The common electrode 29 and the common electrode connection terminal 81 shown in FIG. 4 will be described later with reference to FIGS.

[0030] 3 , the gate line driving circuit 15, the signal line selection circuit 16, and the solar cell driving circuit 17 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 and the solar cell driving circuit 17 are provided in an area of ​​the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in an area of ​​the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0031] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0032] For example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs) are used as the light sources 53 and 54. The light sources 53 and 54 emit light of different wavelengths.

[0033] The first light emitted from the light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger or the like. The second light emitted from the light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0034] The arrangement of the light sources 53, 54 shown in Figure 3 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one light source is arranged.

[0035] 5 is a block diagram showing an example of the configuration of a detection device according to an embodiment. As shown in FIG. 5, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0036] The sensor unit 10 has a plurality of optical sensors PD. The optical sensors PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with the gate drive signals VGL supplied from the gate line drive circuit 15.

[0037] The detection control circuit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0038] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GL (see FIG. 6 ) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of photosensors PD connected to the gate lines GL.

[0039] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects multiple signal lines SL (see FIG. 6 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photosensor PD to the detection unit 40.

[0040] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0041] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0042] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0043] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0044] The coordinate extraction circuit 45 is a logic circuit that calculates the detected coordinates of the unevenness of the surface of a finger or the like when the signal processing circuit 44 detects contact or proximity of a finger. The coordinate extraction circuit 45 is also a logic circuit that calculates the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each optical sensor PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0045] FIG. 6 is a circuit diagram showing a detection device according to an embodiment. Note that FIG. 6 also shows the circuit configuration of a detection circuit 48. Furthermore, FIG. 6 omits the solar cell SC and shows only the sensor pixel PX and the detection circuit 48. The solar cell SC is charged by a battery 73 via a charge control circuit 72 via a separate route, as shown in FIG. 7 . As shown in FIG. 6 , the sensor pixel PX includes a photosensor PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photosensor PD and is equivalently connected in parallel with the photosensor PD.

[0046] 6 shows two gate lines GL(m) and GL(m+1) aligned in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) aligned in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0047] The plurality of gate lines GL extend in a first direction Dx and are arranged at intervals in a second direction Dy. The plurality of signal lines SL extend in the second direction Dy and are arranged at intervals in the first direction Dx. The plurality of sensor pixels PX (plurality of photosensors PD) are provided in an area surrounded by two gate lines GL and two signal lines SL.

[0048] The drive transistors Tr are provided corresponding to the respective photosensors PD. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0049] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the anode of the photosensor PD and the capacitive element Ca.

[0050] A sensor power supply signal VDDSNS is supplied to the cathode of the photosensor PD from the power supply circuit 123 (see FIG. 1 ). A sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via the reset transistor TrR.

[0051] When the sensor pixel PX is irradiated with light during the exposure period, a current corresponding to the amount of light flows through the photosensor PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated on the photosensor PD for each sensor pixel PX.

[0052] During the readout period, the switch SSW of the detection circuit 48 is turned on, connecting the detection circuit 48 to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts fluctuations in current supplied from the signal line SL into voltage fluctuations and amplifies the voltage fluctuations. A reference potential (Vref) having a fixed potential is input to the non-inverting input (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 1) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also includes a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0053] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 6 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one photosensor PD.

[0054] 7 is a block diagram showing a schematic configuration example of a light sensor, a solar cell, a battery circuit, and a light source. As shown in FIG. 7, the detection device 1 has a detection circuit 48 connected to the light sensor PD and a battery circuit 74 connected to the solar cell SC. The detection circuit 48 has been described in FIGS. 5 and 6, so a repeated description will be omitted.

[0055] The battery circuit 74 includes a charge control circuit 72 and a battery 73. The charge control circuit 72 adjusts the power supplied from the solar cell SC to control the charging of the battery 73. For example, the charge control circuit 72 is connected between the connection transistor TrA (see FIG. 8) and the solar cell SC to adjust the power charged to the battery 73. Alternatively, the charge control circuit 72 controls the operation of the solar cell drive circuit 17 (see FIG. 3) to control the operation of the connection transistor TrA, thereby adjusting the power supplied from the solar cell SC to the battery 73. In this case, the connection transistor TrA and the battery 73 may be directly connected. The charge control circuit 72 appropriately adjusts the voltage and current output to the battery 73 depending on the state (capacity, temperature, etc.) of the battery 73. Alternatively, the connection transistor TrA may be turned off to stop charging the battery 73 when the photosensor PD and the detection circuit 48 are performing a detection operation, and the connection transistor TrA may be turned on to charge the battery 73 when the detection operation is not being performed.

[0056] The battery 73 supplies a drive voltage VLED to the light sources 53 and 54. The light sources 53 and 54 emit light L1 using the drive voltage VLED. The optical sensor PD outputs an electrical signal corresponding to the irradiated light L1 as a detection signal Vdet. The detection circuit 48 processes the detection signal Vdet from the optical sensor PD as described above.

[0057] Although the battery 73 supplies the driving voltage VLED to the light sources 53 and 54 in the example shown, it may also be used as a power source for other components and circuits of the detection device 1 as needed.

[0058] Next, the configuration of the photosensor PD and the solar cell SC will be described with reference to Fig. 8, which is a cross-sectional view taken along the line VIII-VIII' in Fig. 4.

[0059] In the following description, the direction perpendicular to the surface of the sensor substrate 21, from the sensor substrate 21 toward the sealing film 90, is referred to as the "upper side" or simply "upper." The direction from the sealing film 90 toward the sensor substrate 21 is referred to as the "lower side" or simply "lower."

[0060] 8 , the detection device 1 includes a TFT layer, an organic insulating film 27, an inorganic insulating film 28, a photosensor PD and a solar cell SC, and a sealing film 90 laminated in this order on a sensor substrate 21. The TFT layer is a circuit formation layer in which a drive transistor Tr, a connection transistor TrA, and various wirings such as a gate line GL and a signal line SL are provided.

[0061] The sensor substrate 21 is an insulating substrate made of a film-like resin. The drive transistor Tr provided in the TFT layer is provided in a region overlapping with the first lower electrode 23 of the photosensor PD. Specifically, the drive transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64.

[0062] The connection transistor TrA is provided in a region overlapping with the second lower electrode 25 of the solar cell SC. Specifically, the connection transistor TrA has a semiconductor layer 61A, a source electrode 62A, a drain electrode 63A, and a gate electrode 64A.

[0063] Although the stacked structure of the drive transistor Tr is described in FIG. 8, the stacked structure of the connection transistor TrA is similar to that of the drive transistor Tr, and the description of the drive transistor Tr can also be applied to the connection transistor TrA.

[0064] The TFT layer includes an undercoat film 91, a gate insulating film 92, an interlayer insulating film 93, and a superposed insulating film 94 as insulating films.

[0065] The light-shielding film 65 is provided on the sensor substrate 21. The light-shielding film 65 is provided between the semiconductor layer 61 and the sensor substrate 21. The light-shielding film 65 can prevent light from entering the channel region of the semiconductor layer 61 from the sensor substrate 21 side.

[0066] The undercoat film 91 is provided on the sensor substrate 21, covering the light-shielding film 65. The undercoat film 91 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 91 is not limited to that shown in FIG. 8. For example, the undercoat film 91 may be a laminated film having two or more layers stacked on top of each other.

[0067] The drive transistor Tr is provided on the sensor substrate 21. The semiconductor layer 61 is provided on an undercoat film 91. The gate insulating film 92 is provided on the undercoat film 91, covering the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 92.

[0068] 8, the driving transistor Tr has a top gate structure. However, the present invention is not limited to this, and the driving transistor Tr may have a bottom gate structure or a dual gate structure in which gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0069] A connection wiring 64a is provided in the same layer as the gate electrode 64. The connection wiring 64a is electrically connected to the gate electrode 64. A connection wiring 65a is provided in the same layer as the light-shielding film 65. The connection wiring 65a is electrically connected to the light-shielding film 65. The connection wiring 64a and the connection wiring 65a are connected via a contact hole CH4 that penetrates the undercoat film 91 and the gate insulating film 92. As a result, the light-shielding film 65 is electrically connected to the gate electrode 64 via the connection wirings 64a and 65a, and is supplied with the same potential as the gate electrode 64. The light-shielding film 65A and the connection wirings 64Aa and 65Aa provided in the connection transistor TrA have the same configurations as the light-shielding film 65 and the connection wirings 64a and 65a provided in the drive transistor Tr.

[0070] The interlayer insulating film 93 is provided on the gate insulating film 92, covering the gate electrode 64. The interlayer insulating film 93 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 through a contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 through a contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93. The superposed insulating film 94 is provided on the interlayer insulating film 93, covering the source electrode 62 and the drain electrode 63.

[0071] The organic insulating film 27 is provided on the superposed insulating film 94, covering the source electrode 62 and the drain electrode 63 of the drive transistor Tr. The organic insulating film 27 is a planarizing film made of an organic insulating material. In this embodiment, a contact hole CH1 in the organic insulating film 27 is provided in a region overlapping with the source electrode 62. The first lower electrode 23 of the photosensor PD is electrically connected to the source electrode 62 at the bottom of the contact hole CH1.

[0072] The inorganic insulating film 28 is provided on the organic insulating film 27. The inorganic insulating film 28 is a barrier film made of an inorganic insulating material such as a silicon nitride (SiN) film.

[0073] The photosensor PD and the solar cell SC are provided on the inorganic insulating film 28. Next, the detailed configuration of the photosensor PD will be described with reference to Figures 8 and 9. Figure 9 is an enlarged cross-sectional view showing the photosensor in Figure 8. Note that in Figure 8, the first lower buffer layer 32 and the first upper buffer layer 33 of the photosensor PD are omitted.

[0074] 8 and 9 , the photosensor PD has a first lower electrode 23, a first lower buffer layer 32, a first active layer 31, a first upper buffer layer 33, a first upper electrode 24, and a common electrode 29. The photosensor PD is formed by stacking the first lower electrode 23, the first lower buffer layer 32 (hole transport layer), the first active layer 31, the first upper buffer layer 33 (electron transport layer), the first upper electrode 24, and the common electrode 29 in this order in a direction perpendicular to the sensor substrate 21. The photosensor PD of this embodiment is a photodiode (OPD: Organic Photodiode) in which an organic semiconductor is used as the first active layer 31.

[0075] The first lower electrode 23 is an anode electrode of the photosensor PD and is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide). The first lower electrode 23 is provided separately for each photosensor PD. The first lower buffer layer 32, the first active layer 31, the first upper buffer layer 33, and the first upper electrode 24 are provided continuously across multiple photosensors PD. Specifically, the first lower buffer layer 32, the first active layer 31, the first upper buffer layer 33, and the first upper electrode 24 are provided to overlap the multiple first lower electrodes 23 of adjacent photosensors PD and also overlap the insulating film 35 between adjacent photosensors PD.

[0076] The insulating film 35 is provided to cover the periphery of the first lower electrode 23. Although not shown in the drawings, the insulating film 35 is provided on the inorganic insulating film 28 between the first lower electrodes 23 of adjacent photosensors PD. The insulating film 35 insulates the first lower electrodes 23 of adjacent photosensors PD. The insulating film 35 is also provided to cover the contact hole CH1, and covers the first lower electrode 23 in the region overlapping with the contact hole CH1. As a result, even if a step occurs in the first lower buffer layer 32 (hole transport layer) inside the contact hole CH1, the insulating film 35 can prevent a short circuit between the first active layer 31 and the first lower electrode 23. In this embodiment, the insulating film 35 is made of a silicon nitride film (SiN) or a silicon oxide film (SiO ２ ) or other inorganic insulating materials.

[0077] Furthermore, contact hole CH1 is provided in the center of first lower electrode 23, penetrating organic insulating film 27 in the thickness direction (third direction Dz). First lower electrode 23 is connected to source electrode 62 at the bottom of contact hole CH1. Note that the position of contact hole CH1, i.e., the connection point between photosensor PD and drive transistor Tr, is not limited to the center of first lower electrode 23 and can be changed as appropriate.

[0078] The characteristics (e.g., voltage-current characteristics and resistance value) of the first active layer 31 change depending on the light irradiated thereto. An organic material is used as the material for the first active layer 31. Specifically, the first active layer 31 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. Examples of low-molecular-weight organic materials that can be used for the first active layer 31 include C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (perylene derivative).

[0079] The first active layer 31 can be formed using these low-molecular-weight organic materials by a vapor deposition (dry process). In this case, the first active layer 31 may be, for example, a stacked film of CuPc and F16CuPc, or a stacked film of rubrene and C60. The first active layer 31 can also be formed by a coating (wet process). In this case, the first active layer 31 is formed using a material that combines the above-mentioned low-molecular-weight organic material with a high-molecular-weight organic material. Examples of high-molecular-weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The first active layer 31 can be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0080] The first lower buffer layer 32 is a hole transport layer, and the first upper buffer layer 33 is an electron transport layer. The first lower buffer layer 32 and the first upper buffer layer 33 are provided to facilitate the holes and electrons generated in the first active layer 31 reaching the first lower electrode 23 or the first upper electrode 24. The first lower buffer layer 32 (hole transport layer) is in direct contact with the top of the first lower electrode 23, and is also provided on the insulating film 35 between adjacent first lower electrodes 23. The first active layer 31 is in direct contact with the top of the first lower buffer layer 32. The material of the hole transport layer is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0081] The first upper buffer layer 33 (electron transport layer) is in direct contact with the top of the first active layer 31, and the first upper electrode 24 is in direct contact with the top of the first upper buffer layer 33. Ethoxylated polyethyleneimine (PEIE) is used as the material for the electron transport layer.

[0082] The materials and manufacturing methods of the first lower buffer layer 32, the first active layer 31, and the first upper buffer layer 33 are merely examples, and other materials and manufacturing methods may be used. For example, the first lower buffer layer 32 and the first upper buffer layer 33 are not limited to single-layer films, and may be formed as multilayer films including an electron blocking layer and a hole blocking layer.

[0083] The first upper electrode 24 is provided on the first upper buffer layer 33. The first upper electrode 24 is a cathode electrode of the photosensor PD and is formed continuously over the entire detection area AA. In other words, the first upper electrode 24 is provided continuously over the multiple photosensors PD. The first upper electrode 24 faces the multiple first lower electrodes 23, with the first lower buffer layer 32, the first active layer 31, and the first upper buffer layer 33 interposed therebetween. The first upper electrode 24 is formed of a non-transparent conductive material such as silver (Ag).

[0084] The common electrode 29 is provided on the first upper electrode 24. The common electrode 29 is provided continuously across the multiple photosensors PD and the multiple solar cells SC. The common electrode 29 is formed of a light-transmitting conductive material such as ITO. A common reference potential is supplied to the multiple photosensors PD and the multiple solar cells SC via the common electrode 29.

[0085] Fig. 10 is a cross-sectional view taken along the line XX' in Fig. 4. As shown in Fig. 4 and Fig. 10, a common electrode connection terminal 81 is provided in the peripheral area GA of the sensor substrate 21. The common electrode 29 is provided continuously from the detection area AA to the peripheral area GA, and is connected to the common electrode connection terminal 81 in the peripheral area GA.

[0086] 10 , the common electrode connection terminal 81 is provided on the overlapping insulating film 94 in the peripheral area GA. Furthermore, reference potential supply wirings 82 and 83 are provided between the common electrode connection terminal 81 and the sensor substrate 21. The common electrode connection terminal 81 is connected to the reference potential supply wiring 82, and a reference potential is supplied to the common electrode connection terminal 81.

[0087] In the region between the common electrode connection terminal 81 and the sensor pixel PX, the organic insulating film 27 and the inorganic insulating film 28 are removed, and the insulating film 35, the first active layer 31, the common electrode 29, and the sealing film 90 are laminated in this order on the superimposed insulating film 94. Moreover, in the region where the common electrode connection terminal 81 is provided, the insulating film 35 and the first active layer 31 are not provided, and the common electrode 29 and the sealing film 90 are laminated in this order on the common electrode connection terminal 81. With this configuration, the common electrode 29 is connected to the common electrode connection terminal 81, and a reference potential is supplied from the reference potential supply wirings 82 and 83.

[0088] 8 and 9 , the sealing film 90 is provided on the common electrode 29 and is provided continuously to cover the multiple photosensors PD and the multiple solar cells SC. The sealing film 90 is made of an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as acrylic. The sealing film 90 is not limited to a single layer, but may be a laminated film of two or more layers combining the above inorganic film and resin film. The sealing film 90 effectively seals the multiple photosensors PD and the multiple solar cells SC, and can prevent moisture from entering from the upper surface side.

[0089] Next, the detailed configuration of the solar cell SC will be described with reference to Figures 8 and 11. Figure 11 is an enlarged cross-sectional view of the solar cell in Figure 8. Note that in Figure 8, the second lower buffer layer 37 and the second upper buffer layer 38 of the solar cell SC are omitted.

[0090] 8 and 11 , the solar cell SC has a configuration similar to that of the photosensor PD and is a photodiode (OPD) that uses an organic semiconductor as the second active layer 36. Specifically, the solar cell SC has a second lower electrode 25, a second lower buffer layer 37, a second active layer 36, a second upper buffer layer 38, and a common electrode 29. In the solar cell SC, the second lower electrode 25, the second lower buffer layer 37 (hole transport layer), the second active layer 36, the second upper buffer layer 38 (electron transport layer), and the common electrode 29 are stacked in this order in the direction perpendicular to the sensor substrate 21.

[0091] The second lower electrode 25, second lower buffer layer 37 (hole transport layer), second active layer 36, and second upper buffer layer 38 of the solar cell SC are provided in the same layer as the first lower electrode 23, first lower buffer layer 32, first active layer 31, and first upper buffer layer 33 of the photosensor PD, respectively.

[0092] Furthermore, the first lower electrode 23, first lower buffer layer 32, first active layer 31, first upper buffer layer 33, and first upper electrode 24 of the photosensor PD are provided spaced apart from the second lower electrode 25, second lower buffer layer 37, second active layer 36, and second upper buffer layer 38 of the solar cell SC. A common electrode 29 and a sealing film 90 are provided between adjacent photosensors PD and solar cells SC. The common electrode 29 is provided to cover the side surfaces of the first active layer 31 of the photosensor PD, the side surfaces of the first upper electrode 24, and the side surfaces of the second active layer 36 of the solar cell SC. The sealing film 90 is provided to cover the common electrode 29 formed in a concave shape between the adjacent photosensor PD and solar cell SC.

[0093] The second lower electrodes 25 of the solar cells SC are formed of a non-transparent conductive material such as silver (Ag), etc. The second lower electrodes 25 are provided separately for each solar cell SC.

[0094] The insulating film 35 is provided to cover the peripheral edge of the second lower electrode 25. The insulating film 35 is provided on the inorganic insulating film 28 between the adjacent first lower electrode 23 and second lower electrode 25. The insulating film 35 insulates the first lower electrode 23 of the adjacent photosensor PD from the second lower electrode 25 of the solar cell SC. The insulating film 35 is also provided to cover the contact hole CH5, and covers the second lower electrode 25 in the region overlapping with the contact hole CH5.

[0095] The second lower buffer layer 37, the second active layer 36, and the second upper buffer layer 38 of the solar cell SC are formed of the same materials as the first lower buffer layer 32, the first active layer 31, and the first upper buffer layer 33 of the photosensor PD, respectively.

[0096] The common electrode 29 is provided on the second upper buffer layer 38. In other words, the common electrode 29 also serves as the upper electrode of the solar cell SC.

[0097] With the above-described configuration, the first lower electrode 23 of the optical sensor PD is light-transmitting, and the first upper electrode 24 is non-light-transmitting. That is, the optical sensor PD is configured as a bottom-receiving type. Light L1 emitted from the light sources 53, 54 and transmitted through or reflected by the object to be detected Fg is irradiated onto the first lower electrode 23 side of the optical sensor PD. The light L1 passes through the sensor substrate 21 and the first lower electrode 23 of the optical sensor PD, and is irradiated onto the first active layer 31.

[0098] Furthermore, the second lower electrode 25 of the solar cell SC is opaque, and the common electrode 29 is translucent. That is, the solar cell SC is configured as a top-side light-receiving type. Natural light L2 from outside is irradiated onto the common electrode 29 side of the solar cell SC. Specifically, the natural light L2 passes through the sealing film 90 and the common electrode 29 of the solar cell SC and is irradiated onto the second active layer 36.

[0099] As a result, the optical sensor PD is irradiated with light L1 that has passed through or been reflected by the detection object Fg, and natural light L2 is blocked by the first upper electrode 24. Furthermore, the solar cell SC is irradiated with natural light L2, and the light L1 that has passed through or been reflected by the detection object Fg is blocked by the second lower electrode 25. Therefore, the detection device 1 can effectively detect light and generate electricity using the optical sensor PD and solar cell SC that are provided on the same sensor substrate 21.

[0100] 8 are housed in the housing 200 shown in Fig. 2 to form the detection device 1. In this case, the lower surface of the sensor substrate 21 faces the inner peripheral surfaces 201a and 202a of the housing 200, and the common electrode 29 and the sealing film 90 face the outer peripheral surfaces 201b and 202b of the housing 200.

[0101] When the optical sensor PD and the solar cell SC provided on the same sensor substrate 21 are housed in the annular housing 200, the optical sensor PD is irradiated with light L1 that has passed through or been reflected by the object to be detected Fg from the inner circumferential surfaces 201 a, 202 a side, and the solar cell SC is irradiated with natural light L2 from the outer circumferential surfaces 201 b, 202 b side. Therefore, even when the optical sensor PD and the solar cell SC are housed in the annular housing 200, the detection device 1 can effectively detect light and generate electricity.

[0102] As described above, the outer peripheral surface 201b and the inner peripheral surface 202a of the housing 200 are non-transparent. Therefore, in the optical sensor PD arranged in the first portion 201, natural light L2 is blocked by the first upper electrode 24 and the outer peripheral surface 201b of the housing 200. In addition, in the solar cell SC arranged in the second portion 202, light L1 is blocked by the second lower electrode 25 and the inner peripheral surface 202a of the housing 200. This improves the detection sensitivity of the optical sensor PD.

[0103] It is sufficient that at least the first lower electrode 23 of the photosensor PD is light-transmitting, and that at least the common electrode 29 of the solar cell SC is light-transmitting. That is, the first upper electrode 24 of the photosensor PD and the second lower electrode 25 of the solar cell SC may also be formed of a light-transmitting conductive material such as ITO. Even in this case, by housing the photosensor PD and the solar cell SC in the housing 200 as described above, the detection sensitivity of the photosensor PD and the power generation efficiency of the solar cell SC can be ensured.

[0104] 12 is an explanatory diagram illustrating the relationship between detection by the optical sensor of the detection device and the operation of the solar cell. As shown in Fig. 12, the detection device 1 performs a detection period T during which detection is performed by the optical sensor PD and a charging period TA during which the battery 73 is charged by the solar cell SC, in a time-division manner. In Fig. 12, the detection periods T and the charging periods TA are alternately arranged, such as detection period T, charging period TA, detection period T, charging period TA.

[0105] During the detection period T, the detection device 1 executes a reset period Prst, an effective exposure period Pex, and a readout period Pdet. During the reset period Prst and the readout period Pdet, the gate line driving circuit 15 sequentially scans the gate lines GL(1) to GL(M). That is, during the detection period T, the photosensors PD in the entire detection area AA are scanned.

[0106] During the detection period T, the light sources 53 and 54 are turned on and emit the light L1. Also during the detection period T, the operation of the battery circuit 74 is stopped and charging of the battery 73 is stopped.

[0107] During the charging period TA, the solar cell drive circuit 17 turns on the connecting transistor TrA (conducting state), and the current generated in the solar cell SC in response to the irradiated natural light L2 is supplied to the battery circuit 74. In the battery circuit 74, the charge control circuit 72 charges the battery 73.

[0108] During the charging period TA, the gate line driving circuit 15 stops and the light sources 53 and 54 are turned off, that is, during the charging period TA, no detection is performed by the photosensor PD.

[0109] In this way, the detection device 1 can improve the detection sensitivity of the optical sensor PD by performing the detection period T and the charging period TA in a time-division manner, and can efficiently charge the battery 73 using the solar cell SC.

[0110] 12 is merely an example, and it is also possible for the detection by the optical sensor PD and the charging of the battery 73 by the solar cell SC to occur during the same period. Also, although the detection period T and the charging period TA are alternately arranged, the durations (lengths) of the detection period T and the charging period TA may be varied as appropriate depending on the power generation state of the solar cell SC and the capacity of the battery 73.

[0111] (Modification) Fig. 13 is a cross-sectional view of a detection device according to a modification. Fig. 14 is an enlarged cross-sectional view of the solar cell in Fig. 13. In the following description, the same components as those described in the above embodiment are designated by the same reference numerals, and duplicated description will be omitted.

[0112] 13 and 14 , in the detection device 1A according to the modified example, the solar cell SC has a second upper electrode 26. More specifically, the solar cell SC has a second lower electrode 25, a second lower buffer layer 37, a second active layer 36, a second upper buffer layer 38, a second upper electrode 26, and a common electrode 29 stacked in this order on the sensor substrate 21.

[0113] In the detection device 1A according to the modified example, the layered structure of the optical sensor PD is the same as that shown in FIG. 9 , and therefore a repeated description will be omitted. However, the first upper electrode 24 and common electrode 29 of the optical sensor PD are light-transmitting, and the first lower electrode 23 is non-light-transmitting. That is, the optical sensor PD is configured as a top-side light-receiving type. Light L1 emitted from the light sources 53 and 54 and transmitted through or reflected by the object to be detected Fg is irradiated onto the first upper electrode 24 side of the optical sensor PD. That is, the light L1 passes through the sealing film 90 and the common electrode 29 and first upper electrode 24 of the optical sensor PD, and is irradiated onto the first active layer 31.

[0114] Furthermore, the second lower electrode 25 of the solar cell SC is translucent, and the second upper electrode 26 is non-translucent. That is, the solar cell SC is configured as a bottom-side light-receiving type. Natural light L2 from outside is irradiated onto the second lower electrode 25 side of the solar cell SC. That is, the natural light L2 passes through the sensor substrate 21 and the second lower electrode 25 of the solar cell SC and is irradiated onto the second active layer 36.

[0115] As a result, the optical sensor PD is irradiated with light L1 that has passed through or been reflected by the detection object Fg, and natural light L2 is blocked by the first lower electrode 23. Furthermore, the solar cell SC is irradiated with natural light L2, and the light L1 that has passed through or been reflected by the detection object Fg is blocked by the second upper electrode 26. Therefore, the detection device 1A according to the modified example can effectively detect light and generate electricity using the optical sensor PD and solar cell SC that are provided on the same sensor substrate 21.

[0116] When the optical sensor PD and solar cell SC shown in Figure 13 are housed in the housing 200 shown in Figure 2, the underside of the sensor substrate 21 faces the outer surfaces 201b and 202b of the housing 200, and the common electrode 29 and sealing film 90 face the inner surfaces 201a and 202a of the housing 200.

[0117] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the gist of each of the above-described embodiments and modifications.

[0118] 1, 1A Detecting device 10 Sensor portion 21 Sensor substrate 23 First lower electrode 24 First upper electrode 25 Second lower electrode 26 Second upper electrode 27 Organic insulating film 28 Inorganic insulating film 29 Common electrode 31 First active layer 32 First lower buffer layer 33 First upper buffer layer 35 Insulating film 36 Second active layer 37 Second lower buffer layer 38 Second upper buffer layer 48 Detection circuit 53, 54 Light source 74 Battery circuit 90 Sealing film 200 Housing 201 First portion 202 Second portion AA Detection area GA Peripheral area PD Photosensor SC Solar cell

Claims

1. A substrate; an organic photosensor including a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode stacked in this order in a detection region of the substrate; an organic photovoltaic element in which a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, a second upper electrode, and the common electrode are stacked in this order in a detection region of the substrate; a sealing film that covers the organic photosensor and the organic photovoltaic element, the first upper electrode and the common electrode of the organic photosensor, and the second lower electrode of the organic photovoltaic element are light-transmitting; The second upper electrode of the organic photovoltaic element is non-transparent. Detection device.

2. A substrate; an organic photosensor including a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode stacked in this order in a detection region of the substrate; an organic photovoltaic element in which a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, and the common electrode are stacked in this order in a detection region of the substrate; a sealing film that covers the organic photosensor and the organic photovoltaic element, The first lower electrode of the organic photosensor and the common electrode of the organic photovoltaic element are light-transmitting. Detection device.

3. the sealing film is provided continuously with the organic photosensor and the organic photovoltaic element, The first lower electrode, the first lower buffer layer, the first active layer, the first upper buffer layer, and the first upper electrode of the organic photosensor and the second lower electrode, the second lower buffer layer, the second active layer, and the second upper buffer layer of the organic photovoltaic element are provided apart from each other. The detection device according to claim 1 or 2.

4. The first lower buffer layer, the first active layer, and the first upper buffer layer of the organic photosensor, and the second lower buffer layer, the second active layer, and the second upper buffer layer of the organic photovoltaic element are formed of the same material. The detection device according to claim 1 or 2.

5. a light source for irradiating the object to be detected with light; The light emitted from the light source and transmitted through or reflected from the object to be detected is irradiated onto the first lower electrode side of the organic photosensor. The detection device according to claim 2 .

6. a light source for irradiating the object to be detected with light; The light emitted from the light source and transmitted through or reflected from the object to be detected is irradiated onto the first upper electrode side of the organic photosensor. The detection device according to claim 1 .

7. a TFT layer, an organic insulating film, and an inorganic insulating film stacked in this order on the substrate; The organic photosensor and the organic photovoltaic element are provided on the inorganic insulating film. The detection device according to claim 1 or 2.

8. a detection circuit connected to the organic photosensor; a battery circuit connected to the organic photovoltaic device; The detection device according to claim 1 or 2.

9. A plurality of the organic photosensors The detection device according to claim 1 or 2.

10. It has an annular housing, the housing has a first portion having a light-transmitting inner circumferential surface and a light-non-transmitting outer circumferential surface, and a second portion having a light-transmitting outer circumferential surface and a light-non-transmitting inner circumferential surface, At least one organic photosensor and at least one organic photovoltaic element are included in each of the first and second portions; In the first portion, a total area of ​​the at least one organic photosensor is greater than a total area of ​​the at least one organic photovoltaic element; In the second portion, a total area of ​​the at least one organic photosensor is smaller than a total area of ​​the at least one organic photovoltaic element. The detection device according to claim 1 or 2.

11. It has an annular housing, the housing has a first portion having a light-transmitting inner circumferential surface and a second portion having a light-transmitting outer circumferential surface, the organic photosensor is disposed in the first portion; The organic photovoltaic element is disposed on the second portion. The detection device according to claim 1 or 2.