Film formation method

Abstract

This film formation method is for forming a film on an object, the method comprising a determination step and a formation step. In the determination step, the condition for forming a film is determined. In the formation step, a film is formed by the ion plating method on an object, under the film formation condition that has been determined. Moreover, in the determination step, the film formation condition is determined on the basis of the state of a target at the time of the determination of the film formation condition.

Description

Film forming method

[0001] The disclosed embodiments relate to a film formation method.

[0002] Conventionally, techniques for forming a functional thin film on the surface of an object such as a cutting tool have been disclosed, and in these conventional techniques, the functional thin film can be formed on the object by a physical vapor deposition method such as an arc ion plating method (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2003-268544

[0004] A film formation method according to one aspect of the embodiment is a film formation method for forming a coating on an object, and includes a determining step and a forming step. The determining step determines film formation conditions for the coating. The forming step forms the coating on the object by an ion plating method based on the determined film formation conditions. The determining step determines the film formation conditions based on the state of a target when the film formation conditions are determined.

[0005] FIG. 1 is a schematic diagram showing an example of the configuration of a film forming apparatus according to an embodiment. FIG. 2 is a block diagram showing an example of the configuration of a control device according to an embodiment. FIG. 3 is a cross-sectional view showing an example of a target state. FIG. 4 is a diagram showing an example of a target state storage unit according to an embodiment. FIG. 5 is a diagram showing an example of a determination process according to an embodiment. FIG. 6 is a diagram showing an example of a target state storage unit according to another embodiment 1. FIG. 7 is a diagram showing an example of a determination process according to another embodiment 1. FIG. 8 is a diagram showing an example of a target state storage unit according to another embodiment 2. FIG. 9 is a diagram showing an example of a determination process according to another embodiment 2. FIG. 10 is a diagram showing an example of a target state storage unit according to another embodiment 3. FIG. 11 is a diagram showing an example of a determination process according to another embodiment 3. FIG. 12 is a diagram showing an example of a target state storage unit according to another embodiment 4. FIG. 13 is a diagram showing an example of a determination process according to another embodiment 4. FIG. 14 is a diagram showing an example of a target state storage unit according to another embodiment 5. FIG. 15 is a diagram showing an example of a determination process according to another embodiment 5. FIG. 16 is a diagram showing an example of a target state storage unit according to another embodiment 6. FIG. 17 is a diagram showing an example of a determination process according to another embodiment 6.

[0006] Hereinafter, embodiments of the film forming method disclosed in the present application will be described with reference to the accompanying drawings. Note that the present invention is not limited to the embodiments described below. Furthermore, each embodiment can be appropriately combined within a range that does not cause contradictions in the processing content. Furthermore, the same components in each of the following embodiments are given the same reference numerals, and duplicated explanations will be omitted.

[0007] <Film Forming Apparatus> First, the configuration of a film forming apparatus 1 that performs a film forming method according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the configuration of the film forming apparatus 1 according to an embodiment.

[0008] As shown in FIG. 1, the film forming apparatus 1 according to the embodiment includes a chamber 10 , an exhaust unit 20 , an evaporation unit 30 , a workpiece holder 40 , and a gas supply unit 50 .

[0009] The chamber 10 is a container that accommodates a plurality of workpieces W. The workpieces W are an example of an object, such as a cutting tool. Note that the workpieces W in the present disclosure are not limited to cutting tools. The exhaust unit 20 evacuates the interior of the chamber 10. The interior of the chamber 10 is maintained in a vacuum state by the exhaust unit 20.

[0010] Evaporation unit 30 evaporates target 33, which is a coating material. Evaporation unit 30 has an arc power supply unit 31, an arc cathode 32, and target 33. Arc power supply unit 31 is a power supply circuit that supplies a discharge current to arc cathode 32.

[0011] Arc cathode 32 holds target 33 and generates a vacuum arc discharge between itself and the inner wall of chamber 10 using power supplied from arc power supply 31. Arc cathode 32 and target 33 are located, for example, on a side wall of chamber 10. Furthermore, a use surface 33a of target 33 (see FIG. 3) is exposed inside chamber 10 and is positioned so as to face multiple workpieces W.

[0012] When vacuum arc discharge is initiated by the evaporation unit 30, a molten region called an arc spot having a diameter of several μm is generated on the working surface 33 a of the target 33. A high-density current is concentrated in this arc spot, and the working surface 33 a of the target 33 is instantly melted and evaporated. This vacuum arc discharge forms a coating containing the components of the target 33 on the surfaces of the multiple workpieces W.

[0013] 1 shows an example in which two pairs of arc power supply units 31, arc cathodes 32, and targets 33 are located in film formation apparatus 1, but the present disclosure is not limited to such an example. For example, film formation apparatus 1 may have one pair of arc power supply units 31, arc cathodes 32, and targets 33 located therein, or three or more pairs of arc power supply units 31, arc cathodes 32, and targets 33 located therein.

[0014] The workpiece holding unit 40 holds a plurality of workpieces W. The workpiece holding unit 40 has a first table 41, a plurality of second tables 42, a plurality of columnar portions 43, a drive unit 44, and a bias power supply unit 45.

[0015] The first table 41 is, for example, disk-shaped and rotatably supported at the bottom of the chamber 10. The second table 42 is, for example, disk-shaped and rotatably supported on the upper surface of the first table 41. The columnar portion 43 is, for example, column-shaped and rotatably supported on the upper surface of the second table 42, and supports a plurality of workpieces W.

[0016] The driving unit 44 rotates the first table 41 relative to the chamber 10. The driving unit 44 also rotates the second table 42 relative to the first table 41. The driving unit 44 also rotates the columnar portion 43 relative to the second table 42.

[0017] As a result, a coating containing components of the target 33 is formed approximately uniformly on the entire surface of all of the workpieces W supported by the multiple pillar-shaped portions 43. The bias power supply unit 45 applies a negative potential to the multiple workpieces W via the first table 41, the second table 42, and the pillar-shaped portions 43.

[0018] The gas supply unit 50 supplies a process gas for forming a coating inside the chamber 10. The gas supply unit 50 includes, for example, a plurality of mass flow controllers 51.

[0019] The film forming apparatus 1 also includes a control device 2. The control device 2 is, for example, a computer, and includes a control unit 3 and a storage unit 4. The storage unit 4 stores programs that control various processes executed in the film forming apparatus 1. The control unit 3 controls the operation of the film forming apparatus 1 by reading and executing the programs stored in the storage unit 4.

[0020] The program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 4 of the control device 2. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0021] Although not shown in FIG. 1, the film forming apparatus 1 according to the embodiment may be provided with a heating section for heating multiple workpieces W to a desired temperature, or may be provided with an etching section for etching and cleaning the surface of the workpieces W using Ar plasma or the like.

[0022] <Details of Film Formation Process> Next, details of the film formation process according to the embodiment will be described with reference to Figures 2 to 5. Figure 2 is a block diagram showing an example of the configuration of the control device 2 according to the embodiment. As shown in Figure 2, the control device 2 includes a control unit 3 and a storage unit 4.

[0023] In addition to the functional units shown in FIG. 2, the control device 2 may also have various functional units that known computers have, such as various input devices and audio output devices.

[0024] The storage unit 4 is realized by, for example, a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk. The storage unit 4 has a target state storage unit 4a. Details of the target state storage unit 4a will be described later. The storage unit 4 also stores information used for various processes in the control unit 3.

[0025] The control unit 3 is realized by, for example, a CPU, an MPU (Micro Processing Unit), a GPU (Graphics Processing Unit), or the like executing a program stored in the storage unit 4 using the RAM as a working area.

[0026] The control unit 3 may also be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0027] The control unit 3 has an acquisition unit 3 a, a determination unit 3 b, and a film deposition unit 3 c, and realizes or executes the functions and actions of the control processing described below. Note that the internal configuration of the control unit 3 is not limited to the configuration shown in Figure 2, and may be any other configuration as long as it performs the control processing described below.

[0028] The acquisition unit 3a acquires the state of the target 33 (see FIG. 1) used for film formation when starting film formation. An example of the state of the target 33 acquired by the acquisition unit 3a will be described with reference to FIG. 3. FIG. 3 is a cross-sectional view showing an example of the state of the target 33.

[0029] 3, the use surface 33a of the target 33 gradually lowers from the use surface 33a0 at the start of use because, as described above, the use surface 33a melts and evaporates due to the vacuum arc discharge when a coating containing the components of the target 33 is formed on the surface of the workpiece W (see FIG. 1).

[0030] 3, the usable surface 33a does not necessarily wear evenly across the entire surface, but is divided into areas where the wear is large and areas where the wear is small. This is because the magnetic field formed around the target 33 is uneven, and therefore arc spots are generated unevenly on the usable surface 33a.

[0031] In this embodiment, the acquisition unit 3a acquires, as the state of the target 33, the height position of the lowest point 33a1 of the use surface 33a (i.e., the lowest point on the use surface 33a).

[0032] For example, the acquisition unit 3a acquires the height X1 of the lowest point 33a1 as the height direction position of the lowest point 33a1 when the bottom surface 33b of the target 33 is used as a reference. Note that in the present disclosure, the height direction position of the lowest point 33a1 is also simply referred to as the "position of the lowest point 33a1."

[0033] The position of the lowest point 33a1 acquired by the acquiring unit 3a can be measured, for example, by a contact or laser shape measuring instrument, a displacement meter, etc. Furthermore, the acquiring unit 3a may acquire the position of the lowest point 33a1 that is automatically measured in the film forming apparatus 1 (see FIG. 1 ), or may acquire the position of the lowest point 33a1 that is manually measured by an operator and input to the control device 2.

[0034] Returning to the description of Fig. 2, the determination unit 3b determines the film formation conditions of the coating based on the state of the target 33 (for example, the position of the lowest point 33a1) at the start of film formation, which is acquired by the acquisition unit 3a. Details of the determination process by the determination unit 3b will be described with reference to Figs. 4 and 5.

[0035] 4 is a diagram illustrating an example of a target state storage unit 4 a according to the embodiment. The target state storage unit 4 a shown in FIG. 4 stores, in association with each other, the position of the lowest point 33 a 1 on the use surface 33 a of the target 33 and the film formation time at which a film with a desired film thickness can be formed when the target 33 is at the position of the lowest point 33 a 1 .

[0036] 4, the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1 (see FIG. 1).

[0037] The determining unit 3b (see FIG. 2) determines the film forming conditions for the coating based on the information stored in the target state storage unit 4a. FIG. 5 is a diagram showing an example of the determination process according to the embodiment.

[0038] As shown in Figure 5, the determination unit 3b (see Figure 2) plots on the XY plane the position of the lowest point 33a1 and the film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0039] 5, there is a tendency that the deposition time required to obtain a desired film thickness gradually increases as the position of the lowest point 33a1 decreases. Then, the determination unit 3b draws an approximate straight line L1 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0040] Next, the determining unit 3b determines the film formation time of the next film formation process based on the approximate line L1 and the position of the lowest point 33a1 of the target 33 acquired by the acquiring unit 3a.

[0041] For example, the determining unit 3b inputs the data of the position of the lowest point 33a1 acquired by the acquiring unit 3a into the equation of the approximate line L1, and determines the output data of the film formation time as the film formation time for the next film formation process. This makes it possible to accurately determine the film formation time required to obtain a desired film thickness before the actual film formation process is performed.

[0042] Returning to the explanation of Fig. 2, the film forming unit 3c forms a coating on the workpiece W by ion plating based on the film forming conditions determined by the determination unit 3b. For example, the film forming unit 3c forms a coating on a plurality of workpieces W placed in the film forming apparatus 1 according to the film forming time determined by the determination unit 3b. This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and a coating having a desired film thickness can be obtained with high precision.

[0043] 6 to 17. In the above-described embodiment, an example is shown in which the film formation time required to obtain a desired film thickness is determined based on the height position of the lowest point 33a1 of the target 33, but the present disclosure is not limited to such an example.

[0044] Fig. 6 is a diagram showing an example of a target state storage unit 4a according to another embodiment 1, and Fig. 7 is a diagram showing an example of a determination process according to another embodiment 1. In this another embodiment 1, a film formation time that enables a desired film thickness to be formed is determined based on the difference X2 in height between the lowest point 33a1 and the highest point 33a2 on the use surface 33a of the target 33, among the states of the target 33 shown in Fig. 3.

[0045] The uppermost point 33a2 is the highest point on the use surface 33a. The height position of the uppermost point 33a2 can be measured using, for example, a contact or laser type shape measuring instrument, a displacement meter, or the like.

[0046] In addition, the acquisition unit 3a (see Figure 2) may acquire the difference X2 based on the positions of the lowest point 33a1 and the highest point 33a2 that are automatically measured within the film forming apparatus 1 (see Figure 1), or may acquire the difference X2 that is measured manually by an operator and input into the control device 2 (see Figure 2).

[0047] As shown in FIG. 6, the target state memory unit 4a according to this alternative embodiment 1 stores a difference X2 between the lowest point 33a1 and the highest point 33a2 on the use surface 33a, and a film formation time at which a coating of the desired thickness can be formed when the difference X2 is met, in association with each other.

[0048] 6, the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0049] As shown in FIG. 7, the determination unit 3b (see FIG. 2) according to another embodiment 1 plots on the XY plane the difference X2 and the film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0050] 7, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the difference X2 increases. Then, the determining unit 3b draws an approximate straight line L2 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0051] Next, the determination unit 3b determines the film formation time for the next film formation process based on the approximate straight line L2 and the difference X2 between the lowest point 33a1 and the highest point 33a2 on the use surface 33a acquired by the acquisition unit 3a (see Figure 2).

[0052] For example, the determination unit 3b inputs the data of the difference X2 acquired by the acquisition unit 3a into the equation of the approximate line L2, and determines the output film formation time data as the film formation time for the next film formation process.

[0053] This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and the film forming time required to obtain a desired film thickness can be determined with high accuracy before the actual film forming process is performed. Therefore, according to another embodiment 1, a film having a desired film thickness can be obtained with high accuracy.

[0054] Second Alternative Embodiment FIG. 8 is a diagram showing an example of a target state storage unit 4a according to a second alternative embodiment, and FIG. 9 is a diagram showing an example of a determination process according to the second alternative embodiment.

[0055] In this second alternative embodiment, the volume of the target 33 is used as the state of the target 33 acquired by the acquisition unit 3 a (see FIG. 2 ). The volume of the target 33 can be measured, for example, by an acoustic volume meter.

[0056] In addition, the acquisition unit 3a may acquire the volume of the target 33 that is automatically measured within the film forming apparatus 1 (see Figure 1), or may acquire the volume of the target 33 that is measured manually by an operator and input into the control device 2 (see Figure 2).

[0057] As shown in FIG. 8, the target state storage unit 4 a according to this second embodiment stores the volume of the target 33 and the film formation time required to form a coating having a desired film thickness when the volume is such that the volume is associated with each other.

[0058] 8, the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0059] The determination unit 3b (see Figure 2) according to another embodiment 2 plots on the XY plane, as shown in Figure 9, the volume and film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0060] 9, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the volume decreases. Then, the determination unit 3b draws an approximate line L3 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0061] Next, the determining unit 3b determines the film formation time of the next film formation process based on the approximate line L3 and the volume of the target 33 acquired by the acquiring unit 3a.

[0062] For example, the determination unit 3b inputs the volume data of the target 33 acquired by the acquisition unit 3a into the equation of the approximate line L3, and determines the output film formation time data as the film formation time for the next film formation process.

[0063] This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and the film forming time required to obtain a desired film thickness can be determined with high accuracy before the actual film forming process is performed. Therefore, according to another embodiment 2, a film having a desired film thickness can be obtained with high accuracy.

[0064] <Third Alternative Embodiment> FIG. 10 is a diagram showing an example of a target state storage unit 4a according to a third alternative embodiment, and FIG. 11 is a diagram showing an example of a determination process according to the third alternative embodiment.

[0065] In this alternative embodiment 3, the surface area of ​​the use surface 33a is used as the state of the target 33 acquired by the acquisition unit 3a (see FIG. 2 ). The surface area of ​​the use surface 33a can be measured, for example, by a contact or laser type shape measuring instrument, a displacement meter, or the like.

[0066] In addition, the acquisition unit 3a may acquire the surface area of ​​the use surface 33a that is automatically measured within the film forming apparatus 1 (see Figure 1), or may acquire the surface area of ​​the use surface 33a that is measured manually by an operator and input into the control device 2 (see Figure 2).

[0067] As shown in FIG. 10, the target state memory unit 4a according to this alternative embodiment 3 stores the surface area of ​​the use surface 33a and the film formation time required to form a coating of the desired thickness for that surface area.

[0068] 10 , the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, ... for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0069] The determination unit 3b (see Figure 2) according to another embodiment 3 plots on the XY plane, as shown in Figure 11, the surface area and film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0070] 11, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the surface area of ​​the use surface 33a increases. Then, the determination unit 3b draws an approximate line L4 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0071] Next, the determination unit 3b determines the film formation time of the next film formation process based on the approximate line L4 and the surface area of ​​the use surface 33a acquired by the acquisition unit 3a.

[0072] For example, the determination unit 3b inputs the surface area data of the use surface 33a acquired by the acquisition unit 3a into the equation of the approximate straight line L4, and determines the output film formation time data as the film formation time for the next film formation process to be performed.

[0073] This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and the film forming time required to obtain a desired film thickness can be determined with high accuracy before the actual film forming process is performed. Therefore, according to another embodiment 3, a coating having a desired film thickness can be obtained with high accuracy.

[0074] <Fourth Alternative Embodiment> FIG. 12 is a diagram showing an example of a target state storage unit 4a according to a fourth alternative embodiment, and FIG. 13 is a diagram showing an example of a determination process according to the fourth alternative embodiment.

[0075] In this alternative embodiment 4, the roughness of the use surface 33a is used as the state of the target 33 acquired by the acquisition unit 3a (see FIG. 2). The roughness of the use surface 33a can be measured, for example, with a surface roughness meter.

[0076] In addition, the acquisition unit 3a may acquire the roughness of the use surface 33a that is automatically measured within the film forming apparatus 1 (see Figure 1), or may acquire the roughness of the use surface 33a that is measured manually by an operator and input into the control device 2 (see Figure 2).

[0077] In the target state memory unit 4a according to this other embodiment 4, as shown in FIG. 12, the roughness of the use surface 33a and the film formation time at which a coating of the desired thickness can be formed when the roughness is such are stored in association with each other.

[0078] 12 , the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0079] The determination unit 3b (see Figure 2) according to another embodiment 4 plots on the XY plane the roughness and film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a, as shown in Figure 13.

[0080] 13, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the roughness of the use surface 33a increases. Then, the determination unit 3b draws an approximate straight line L5 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0081] Next, the determination unit 3b determines the film formation time of the next film formation process based on the approximate line L5 and the roughness of the use surface 33a acquired by the acquisition unit 3a.

[0082] For example, the determination unit 3b inputs the roughness data of the use surface 33a acquired by the acquisition unit 3a into the equation of the approximate straight line L5, and determines the output film formation time data as the film formation time for the next film formation process to be performed.

[0083] This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and the film forming time required to obtain a desired film thickness can be determined with high accuracy before the actual film forming process is performed. Therefore, according to another embodiment 4, a film having a desired film thickness can be obtained with high accuracy.

[0084] <Fifth Alternative Embodiment> FIG. 14 is a diagram showing an example of a target state storage unit 4a according to a fifth alternative embodiment, and FIG. 15 is a diagram showing an example of a determination process according to the fifth alternative embodiment.

[0085] In this alternative embodiment 5, the acquiring unit 3 a (see FIG. 2 ) acquires the state of the target 33 using the accumulated usage time of the target 33. The accumulated usage time of the target 33 can be obtained, for example, by continuously recording the usage time of the target 33 every time it is used.

[0086] In addition, the acquisition unit 3a may acquire the cumulative usage time of the target 33 that is automatically recorded within the film forming apparatus 1 (see Figure 1), or may acquire the cumulative usage time of the target 33 that is recorded manually by an operator and input into the control device 2 (see Figure 2).

[0087] As shown in FIG. 14 , the target state storage unit 4 a according to this alternative embodiment 5 stores the cumulative usage time of the target 33 and the film formation time at which a coating having a desired film thickness can be formed for that cumulative usage time, in association with each other.

[0088] 14, the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0089] As shown in FIG. 15, the determination unit 3b (see FIG. 2) according to another embodiment 5 plots on the XY plane the cumulative usage time and film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0090] 15, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the cumulative usage time increases. Then, the determination unit 3b draws an approximate line L6 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0091] Next, the determining unit 3b determines the film formation time of the next film formation process based on the approximate line L6 and the cumulative usage time of the target 33 acquired by the acquiring unit 3a.

[0092] For example, the determination unit 3b inputs the data on the cumulative usage time of the target 33 acquired by the acquisition unit 3a into the equation of the approximate straight line L6, and determines the output film formation time data as the film formation time for the next film formation process to be performed.

[0093] This allows the time for the next coating to be set without removing the target 33 from the film forming apparatus 1. Furthermore, since detachment of the target 33 from the film forming apparatus 1 is avoided, the target 33 is less likely to be displaced, and the film forming time required to obtain a desired film thickness can be determined with high accuracy before the actual film forming process is performed. Therefore, according to another embodiment 5, a coating having a desired film thickness can be obtained with high accuracy.

[0094] Sixth Alternative Embodiment FIG. 16 is a diagram showing an example of a target state storage unit 4a according to a sixth alternative embodiment, and FIG. 17 is a diagram showing an example of a determination process according to the sixth alternative embodiment.

[0095] In this sixth embodiment, the weight of the target 33 is used as the state of the target 33 acquired by the acquisition unit 3a (see FIG. 2). The weight of the target 33 can be measured, for example, by a weighing scale.

[0096] In addition, the acquisition unit 3a may acquire the weight of the target 33 that is automatically measured within the film forming apparatus 1 (see Figure 1), or may acquire the weight of the target 33 that is measured manually by an operator and input into the control device 2 (see Figure 2).

[0097] As shown in FIG. 16 , the target state memory unit 4 a according to this sixth embodiment stores the weight of the target 33 and the film formation time required to form a coating of the desired thickness when the weight is such.

[0098] 16 , the target state storage unit 4a has different target state storage units 4a1, 4a2, 4a3, etc., for each type of target 33. The target state storage unit 4a can be created, for example, based on the usage history of the target 33 in the film forming apparatus 1.

[0099] The determination unit 3b (see Figure 2) according to another embodiment 6 plots on the XY plane, as shown in Figure 17, the weight and film formation time stored in the target state memory unit 4a corresponding to the type of target 33 whose state has been acquired by the acquisition unit 3a.

[0100] 17, there is a tendency that the film formation time required to obtain a desired film thickness gradually increases as the weight of the target 33 decreases. Then, the determination unit 3b draws an approximate line L7 on the XY plane on which the data stored in the target state storage unit 4a is plotted.

[0101] Next, the determining unit 3b determines the film formation time of the next film formation process based on the approximate line L7 and the weight of the target 33 acquired by the acquiring unit 3a.

[0102] For example, the determination unit 3b inputs the weight data of the target 33 acquired by the acquisition unit 3a into the equation of the approximate straight line L7, and determines the output film formation time data as the film formation time for the next film formation process to be performed.

[0103] This makes it possible to accurately determine the film formation time required to obtain a desired film thickness before the actual film formation process is performed. Therefore, according to another embodiment 6, a film having a desired film thickness can be obtained with high accuracy.

[0104] Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments and various modifications are possible without departing from the spirit of the present invention. For example, in the above embodiments, an example was shown in which the film formation time was determined based on the approximate straight lines L1 to L7, but the present disclosure is not limited to such an example and the film formation time may be determined based on an approximate curve such as a quadratic curve.

[0105] In the above embodiment, the determination unit 3 b determines the film formation time among various film formation conditions, but the present disclosure is not limited to this example, and various film formation conditions other than the film formation time may be determined. In this case, the target state storage unit 4 a may store parameters related to the state of the target 33 and various film formation conditions that enable the formation of a desired coating, in association with each other.

[0106] Furthermore, in the above embodiment, an example of applying the technology of the present disclosure to a film forming apparatus 1 that forms a coating by an arc ion plating method is shown, but the present disclosure is not limited to such an example, and the technology of the present disclosure may be applied to film forming apparatuses that form coatings by various film forming methods.

[0107] Further advantages and other aspects may readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

[0108] In each of the above-described embodiments, the deposition time is determined using one of the different pieces of information regarding the state of the target 33 (the position of the lowest point 33a1, the difference X2 between the lowest point 33a1 and the highest point 33a2, the volume, etc.), but is not limited thereto. In each of the above-described embodiments, the deposition time may be determined using two or more different pieces of information regarding the state of the target 33.

[0109] For example, the film formation time may be determined using two factors related to the state of the target 33: the position of the lowest point 33a1 and the volume. If the film formation time set based on the position of the lowest point 33a1 is t1 and the film formation time set based on the volume is t2, the film formation time may be determined as the average value of these times (= (t1 + t2) / 2). This makes it easy to avoid significant deviations in the film formation time. The information for calculating the average value is not limited to the above, and the information shown in each of the above embodiments may be combined as appropriate.

[0110] When combining the information shown in each embodiment, if the information is of the same dimension, extraction of the information can be simplified, which makes it easier to set the film formation time. For example, when combining the position of the lowest point 33a1 and the difference X2 between the lowest point 33a1 and the highest point 33a2, which are information in the same height direction, the film formation time can be easily set.

[0111] Furthermore, when combining the information shown in each embodiment, if the information is of different dimensions, it is easy to avoid a large deviation in the film formation time. For example, by combining the position of the lowest point 33a1, which is information in the height direction (one dimension), with the volume of the target 33, which is three-dimensional, the influence of a measurement error can be suppressed. Another example of a combination of information of different dimensions is the combination of the volume of the target 33, which is three-dimensional, with the cumulative usage time of the target 33.

[0112] The present technology can also be configured as follows. (1) A film formation method for forming a coating on an object, comprising: a step of determining film formation conditions for the coating; and a step of forming the coating on the object by an ion plating method based on the determined film formation conditions, wherein the determining step determines the film formation conditions based on a state of a target when the film formation conditions are determined. (2) The film formation method described in (1), wherein the determining step determines a film formation time for the coating based on a height position of the lowest point on a use surface of the target. (3) The film formation method described in (1) or (2), wherein the determining step determines a film formation time for the coating based on a height difference between the lowest point and the highest point on a use surface of the target. (4) The film formation method described in any one of (1) to (3), wherein the determining step determines a film formation time for the coating based on a volume of the target. (5) The film formation method according to any one of (1) to (4), wherein the determining step determines the film formation time based on the surface area of ​​the use surface of the target. (6) The film formation method according to any one of (1) to (5), wherein the determining step determines the film formation time based on the roughness of the use surface of the target. (7) The film formation method according to any one of (1) to (6), wherein the determining step determines the film formation time based on the cumulative use time of the target. (8) The film formation method according to any one of (1) to (7), wherein the determining step determines the film formation time based on the weight of the target.

[0113] REFERENCE SIGNS LIST 1 Film forming device 2 Control device 3 Control unit 3a Acquisition unit 3b Determination unit 3c Film forming unit 4 Memory unit 4a Target state memory unit 33 Target 33a Use surface 33a1 Lowest point 33a2 Highest point W Workpiece (an example of an object) X2 Difference

Claims

1. A film forming method for forming a film on an object, comprising: determining film formation conditions for the coating; forming the coating on the object by an ion plating method based on the determined film formation conditions; Including, The determining step determines the film formation conditions based on a state of a target when the film formation conditions are determined. Film formation method.

2. The determining step determines the film formation time of the film based on the height position of the lowest point on the use surface of the target. The film forming method according to claim 1 .

3. The determining step determines the film formation time of the film based on the difference in height between the lowest point and the highest point on the use surface of the target. The film forming method according to claim 1 or 2.

4. The determining step determines a deposition time of the coating based on the volume of the target. The film forming method according to claim 1 or 2.

5. The determining step determines the film formation time based on the surface area of ​​the target. The film forming method according to claim 1 or 2.

6. The determining step determines the film formation time of the coating based on the roughness of the working surface of the target. The film forming method according to claim 1 or 2.

7. The determining step determines the film formation time of the coating based on the cumulative usage time of the target. The film forming method according to claim 1 or 2.

8. The determining step determines the deposition time of the coating based on the weight of the target. The film forming method according to claim 1 or 2.