Radiation temperature measurement device, radiation temperature measurement method, and program for radiation temperature measurement device

Abstract

Provided is a radiation temperature measurement device that measures the temperature of an object-to-be-measured having a substrate and a thin film formed on the surface of the substrate, wherein the radiation temperature measurement device comprises: an infrared detection unit that detects the amount of infrared rays radiated from the object-to-be-measured; a substrate spectral characteristic data storage unit that stores substrate spectral characteristic data indicating the temperature characteristics of the spectral characteristics of the substrate; an individual spectral characteristic data reception unit that receives an input of individual spectral characteristic data indicating information pertaining to the reflectance and transmittance of the object-to-be-measured at a prescribed temperature; a spectral characteristic calculation unit that calculates the temperature characteristics of the spectral characteristics of the object-to-be-measured on the basis of the substrate spectral characteristic data and the individual spectral characteristic data; and a temperature calculation unit that calculates the temperature of the object-to-be-measured on the basis of the amount of infrared rays detected by the infrared detection unit and the temperature characteristics of the spectral characteristics of the object-to-be-measured calculated by the spectral characteristic calculation unit.

Description

Radiation temperature measuring device, radiation temperature measuring method, and radiation temperature measuring device program

[0001] The present invention relates to a non-contact radiation temperature measuring device, a radiation temperature measuring method, and a program for a radiation temperature measuring device that receives infrared rays emitted from a measurement target area using an infrared sensor (e.g., a thermopile) and measures the temperature of the measurement target area based on the amount of infrared rays received.

[0002] Conventionally, non-contact radiation temperature measuring devices have been considered that detect infrared rays emitted from a measurement target area using an infrared sensor (for example, a thermopile) and measure the temperature of the measurement target area based on the amount of infrared rays detected.

[0003] This radiation temperature measuring device detects not only the infrared rays emitted from the measurement target area but also the infrared rays that pass through from behind it, so it can be difficult to accurately measure the temperature of the measurement target area.

[0004] To solve these problems, Patent Document 1 describes a radiation thermometer that has two infrared detectors that detect different infrared wavelength bands, and calculates the temperature of the area to be measured based on the amount of infrared detected by these two infrared detectors.

[0005] Specifically, the temperature of the measurement target area is calculated as follows: The total amount of infrared rays in a specified wavelength band incident on the infrared detection unit from the measurement target area is the sum of infrared rays A1 from the measurement target area, infrared rays A2 from behind it, and infrared rays A3 reflected by the measurement target area. When the infrared detection unit and the measurement target area are directly facing each other, A3 is infrared rays from the infrared detection unit and is therefore known. Therefore, the ratio R of A1 to A2 is R = A1 / A2, or in other words, the emissivity / transmittance of the measurement target area.

[0006] Since the two infrared detection units detect different infrared wavelength bands, the ratio R of A1 to A2 is R1 and R2 for each infrared detector. Therefore, the temperature of the measurement area can be calculated using simultaneous equations or bisection from the amount of infrared detected by one infrared detection unit and the amount of infrared detected by the other infrared detection unit and the known ratios R1 and R2 for each wavelength band.

[0007] International Publication No. 2021 / 080002

[0008] However, in the above-described radiation thermometer, the ratios R1 and R2 in each wavelength band of the object to be measured must be calculated in advance before starting temperature measurement. When the object to be measured is a substrate having a thin film formed on its surface, such as a silicon wafer used in semiconductor manufacturing, the temperature characteristics of the spectral characteristics change depending on the material and film thickness of the thin film. Therefore, to actually obtain the temperature characteristics of the spectral characteristics, it is necessary to measure the spectral characteristics at multiple temperatures for each sample with a different material and film thickness, which can take a significant amount of time to prepare for temperature measurement of the object to be measured.

[0009] The present invention has been made in consideration of the above-mentioned problems, and its main initial objective is to shorten the time required to acquire the temperature characteristics of the spectroscopic characteristics of a measurement object before temperature measurement in a radiation thermometer that measures the temperature of a measurement object consisting of a thin film formed on the surface of a substrate.

[0010] As a result of intensive research conducted by the present inventors to solve the above-mentioned problems, they have noticed that, for example, in a semiconductor wafer having a thin film formed on the surface of a silicon substrate, the spectral characteristics of the substrate itself are temperature dependent, but the temperature dependence of the spectral characteristics of the thin film itself formed on the surface of the substrate is so small that it can be considered constant regardless of temperature. As a result of further intensive research, they have found that, as long as the temperature dependence of the spectral characteristics of the substrate itself is prepared in advance, the spectral characteristics of the thin film itself can be estimated simply by measuring the spectral characteristics of the measurement object at any one temperature point, thereby making it possible to estimate the spectral characteristics of the measurement object at each temperature, thereby arriving at the present invention.

[0011] That is, the radiation temperature measuring device according to the present invention measures the temperature of a measurement object having a substrate and a thin film formed on the surface of the substrate, and is characterized by comprising: an infrared detection unit that detects the amount of infrared rays radiated from the measurement object; a substrate spectral characteristic data storage unit that stores substrate spectral characteristic data that indicates the temperature characteristics of the spectral characteristics of the substrate; an individual spectral characteristic data receiving unit that receives input of individual spectral characteristic data that indicates information about the reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation unit that calculates the temperature characteristics of the spectral characteristics of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; and a temperature calculation unit that calculates the temperature of the measurement object based on the amount of infrared rays detected by the infrared detection unit and the temperature characteristics of the spectral characteristics of the measurement object calculated by the spectral characteristic calculation unit.

[0012] With this configuration, the user simply measures the reflectance and transmittance of the object to be measured at a specified temperature and inputs these measurement results, and the temperature characteristics of the spectral characteristics of the object to be measured are calculated based on the reflectance and transmittance of the object to be measured at the specified temperature and the temperature characteristics of the spectral characteristics of the substrate itself.This eliminates the need to measure the spectral characteristics at multiple temperatures for each sample with a different material and film thickness, as was done in the past, and significantly reduces the time required for advance preparation for temperature measurement of the object to be measured.

[0013] As a specific embodiment of the radiation temperature measuring device, it is desirable that the spectral characteristic calculation unit calculates the reflectance and transmittance of the thin film at the predetermined temperature based on the temperature characteristic of the spectral characteristics of the substrate indicated by the substrate spectral characteristic data and the reflectance and transmittance of the measurement object at the predetermined temperature indicated by the individual spectral characteristic data, and calculates the temperature characteristic of the spectral characteristics of the measurement object using the calculated reflectance and transmittance of the thin film at the predetermined temperature and the temperature characteristic of the spectral characteristics of the substrate indicated by the substrate spectral characteristic data.

[0014] Furthermore, the inventors have further studied and found that the temperature dependence of the spectral characteristics of the substrate itself can be easily calculated empirically using physical property information (e.g., electrical resistivity) of the substrate. In particular, they have found that there is a close correlation between the electrical resistivity (or impurity concentration) of the substrate and the refractive index and extinction coefficient, and that by utilizing this correlation, the temperature dependence of the spectral characteristics of the substrate itself can be calculated based on the electrical resistivity of the substrate. Therefore, a specific embodiment of the radiation thermometer for calculating the temperature dependence of the spectral characteristics of the object to be measured preferably further includes: a substrate physical property data storage unit that stores substrate physical property data indicating information about the physical properties of the substrate; a correlation data storage unit that stores first correlation data indicating the correlation between the electrical resistivity, temperature, and refractive index of the substrate; and second correlation data indicating the correlation between the electrical resistivity, temperature, and extinction coefficient of the substrate; and a substrate spectral characteristic calculation unit that calculates the temperature dependence of the spectral characteristics of the substrate based on the electrical resistivity of the substrate indicated by the substrate physical property data, the correlation indicated by the first correlation data, and the correlation indicated by the second correlation data. In this case, if the first correlation data and the second correlation data are stored in advance, the user can acquire the temperature characteristics of the spectral characteristics of the substrate by inputting the electrical resistivity (or impurity concentration) of the substrate. This allows the user to easily acquire information on the temperature characteristics of the spectral characteristics of the substrate even if the information is not prepared in advance.

[0015] The radiation temperature measuring device of the present invention may be configured to measure the temperature of the object to be measured housed in a chamber. In this configuration, an error in the radiation temperature occurs due to the influence of the chamber. To solve this problem, it is preferable that the radiation temperature measuring device measures the temperature of the object to be measured housed in a chamber, and the temperature calculation unit corrects the temperature of the object to be measured using a temperature correction parameter attributable to the chamber.

[0016] As a specific embodiment for canceling the influence of infrared rays passing through from behind the object to be measured, it is desirable that the infrared detection unit of the radiation temperature measuring device includes a first infrared detection unit and a second infrared detection unit that detect the amount of infrared rays from the object to be measured in a first detection infrared wavelength band and a second detection infrared wavelength band that are different from each other, and that the temperature calculation unit calculates the temperature of the object to be measured based on the amount of infrared rays detected by each infrared detection unit.

[0017] In order to make the configuration of the radiation temperature measuring device compact, it is preferable that the optical system for collecting infrared rays emitted from the object to be measured is shared between the first infrared detection unit and the second infrared detection unit.

[0018] In a specific embodiment of the radiation temperature measuring device, the substrate is a wafer made of a single crystal material, and the thin film is SiO ２ Preferably, the film includes a silicon nitride film or a silicon nitride film.

[0019] A radiation temperature measurement method of the present invention is a method for measuring the temperature of a measurement object having a substrate and a thin film formed on a surface of the substrate, and includes an infrared detection step of detecting an amount of infrared rays radiated from the measurement object; a substrate spectral characteristic data storage step of storing substrate spectral characteristic data indicating temperature characteristics of the spectral characteristics of the substrate; an individual spectral characteristic data receiving step of receiving input of individual spectral characteristic data indicating information about the reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation step of calculating the temperature characteristics of the spectral characteristics of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; and a temperature calculation step of calculating the temperature of the measurement object based on the detected amount of infrared rays and the calculated temperature characteristics of the spectral characteristics of the measurement object.

[0020] Further, a program for a radiation thermometer of the present invention is a program for a radiation thermometer that measures the temperature of a measurement object having a substrate and a thin film formed on the surface of the substrate, and causes a computer to function as an infrared detection unit that detects the amount of infrared rays radiated from the measurement object; a substrate spectral characteristic data storage unit that stores substrate spectral characteristic data that indicates the temperature characteristics of the spectral characteristics of the substrate; an individual spectral characteristic data receiving unit that receives input of individual spectral characteristic data that indicates information about the reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation unit that calculates the temperature characteristics of the spectral characteristics of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; and a temperature calculation unit that calculates the temperature of the measurement object based on the amount of infrared rays detected by the infrared detection unit and the temperature characteristics of the spectral characteristics of the measurement object calculated by the spectral characteristic calculation unit.

[0021] Such a radiation temperature measuring method and program for a radiation temperature measuring device can achieve the same effects as the radiation temperature measuring device of the present invention described above.

[0022] According to the present invention configured in this way, in a radiation thermometer that measures the temperature of a measurement object having a thin film formed on the surface of a substrate, it is possible to reduce the time required to acquire the temperature characteristics of the spectroscopic characteristics of the measurement object before temperature measurement.

[0023] FIG. 1 is a diagram schematically showing the overall configuration of a radiation temperature measuring device in this embodiment. FIG. 1 is a diagram schematically showing the configuration of an infrared detection unit in this embodiment. FIG. 2 is a functional block diagram of the radiation temperature measuring device in this embodiment. FIG. 2 is a diagram schematically showing the configuration of an individual spectral characteristic measurement unit in this embodiment. FIG. 3 is a diagram showing an example of the relationship between the electrical resistivity, refractive index, and temperature of a substrate. FIG. 4 is a diagram showing an example of the relationship between the electrical resistivity, extinction coefficient, and temperature of a substrate. FIG. 5 is a diagram explaining the reflectance and transmittance of light in a measurement object in this embodiment. FIG. 6 is a functional block diagram of a radiation temperature measuring device in another embodiment. FIG. 7 is a functional block diagram of a radiation temperature measuring device in another embodiment. FIG. 8 is a diagram schematically showing the configuration of an infrared detection unit in another embodiment. FIG. 9 is a diagram explaining a measurement method of an individual spectral characteristic measurement unit in another embodiment. FIG. 10 is a diagram explaining the calculation principle of a temperature calculation unit in an embodiment. FIG. 11 is a diagram explaining the calculation principle of a temperature calculation unit in an embodiment.

[0024] Hereinafter, an embodiment of a radiation temperature measuring device of the present invention will be described with reference to the drawings.

[0025] The radiation thermometer 100 of this embodiment is incorporated into a semiconductor manufacturing system for manufacturing, for example, semiconductor wafers X. This radiation thermometer 100 measures the temperature of a semiconductor wafer X, which is an object to be measured, in a non-contact manner. As shown in FIG. 1 , this radiation thermometer 100 is a non-contact type that includes an infrared detector 1 that detects infrared rays emitted from the semiconductor wafer X and a processor 2 that calculates the temperature of the semiconductor wafer X based on the amount of infrared rays detected by the infrared detector 1. In this embodiment, the semiconductor wafer X is fixed at a predetermined position in a processing chamber V using an electrostatic chuck device C. The radiation thermometer 100 is configured to measure the temperature of the semiconductor wafer X through a measurement window V1 formed in the wall of the processing chamber V, which transmits infrared rays. Note that processing such as film formation, etching, cleaning, surface modification, heating, or cooling is performed in the processing chamber V.

[0026] Before describing the detailed configuration of this radiation temperature measuring device 100, the semiconductor wafer X, which is the object to be measured, will be described.

[0027] This semiconductor wafer X has low emissivity (high transmittance) in the infrared wavelength band detectable by the infrared detection unit 1 (hereinafter referred to as the detection infrared wavelength band), and infrared light may pass through a background object (non-target object Z) and enter the sensor element 11 of the infrared detection unit 1. Specifically, this semiconductor wafer X comprises a circular thin plate-shaped substrate X1 (Si substrate) made of single crystal silicon and a film of, for example, silicon dioxide (SiO ２ The semiconductor wafer X is provided with a thin film X2 made of a dielectric film such as silicon nitride (SiN). The thin film X2 may be formed as a single layer, or may be formed as multiple layers. The thickness of the thin film X2 is preferably a thickness that allows infrared light to pass through, for example, 500 nm or less (e.g., 400 nm), but is not limited to this. The semiconductor wafer X is arranged such that one side of the substrate X1 on which the thin film X2 is formed faces the measurement window V1 of the processing chamber V, and the back side faces the flat attracting surface of the electrostatic chuck device C. In this embodiment, the electrostatic chuck device C provided on the back side of the semiconductor wafer X is the non-target object Z.

[0028] Next, each part of the radiation temperature measuring device 100 will be described.

[0029] 2, the infrared detection unit 1 includes a sensor element 11 such as a thermopile that detects infrared rays, an optical system 12 arranged in front of the sensor element 11, and a housing 13 that houses the sensor element 11 and the optical system 12. The infrared detection unit 1 is arranged to face the surface of the semiconductor wafer X (specifically, the surface of the thin film X2), and is configured to receive infrared rays from the semiconductor wafer X.

[0030] The sensor element 11 is a thermal type that detects temperature changes as changes in electromotive force when infrared rays are absorbed, and here a thermopile made of a thin film of many thermocouples arranged in series is used. Note that the sensor element 11 may be of another thermal type such as a porometer or pyroelectric type, or may be of a quantum type instead of a thermal type.

[0031] The optical system 12 is composed of a lens and the like provided in front of the sensor element 11. The lens is an IR lens that focuses infrared rays emitted from the semiconductor wafer X onto the sensor element 11, and has a substantially circular shape with a diameter of about 10 mm to 22 mm in a plan view, for example. The shape and size of the lens are not limited to those described above and may be changed as appropriate.

[0032] Furthermore, the infrared detection unit 1 of this embodiment includes a wavelength selection mechanism 14, located either upstream or downstream of the optical system 12, that selects the wavelength band of infrared light received by the sensor element 11. The wavelength selection mechanism 14 includes multiple optical filters 14a, 14b that transmit different infrared wavelength bands and a movement mechanism that selectively moves one of the optical filters 14a, 14b along the optical path. By switching between the optical filters 14a, 14b using the wavelength selection mechanism 14, the infrared detection unit 1 can function as multiple infrared detection units 1 (also referred to as first infrared detection unit 1a and second infrared detection unit 1b) that have different detectable infrared wavelength bands (first and second detectable infrared wavelength bands). This allows the optical system 12 and housing 13 to be shared between the multiple infrared detection units 1a, 1b. Here, "different from each other" includes wavelength bands that partially overlap. Essentially, it is sufficient that the wavelength bands are not completely identical. In this embodiment, the first detectable infrared wavelength band is set to 7 μm or more and 9 μm or less, and the second detectable infrared wavelength band is set to 8 μm or more and 14 μm or less, but is not limited to this.

[0033] The calculation device 2 is a dedicated or general-purpose computer including a CPU, an internal memory, an input / output interface, an A / D converter, etc., and performs at least the functions of a spectroscopic characteristic data storage unit 21, a temperature calculation unit 22, and a temperature display unit 23 as shown in FIG. 3 by the CPU and peripheral devices working together based on a predetermined program stored in the internal memory.

[0034] The spectral characteristic data storage unit 21 stores spectral characteristic data indicating the temperature characteristics (changes in the spectral characteristics corresponding to temperature changes, i.e., the spectral characteristics at each temperature, also referred to as temperature dependency) of the spectral characteristics (characteristics indicating the energy ratios for each wavelength of the transmittance, reflectance, and emissivity, also referred to as spectral distribution) of the semiconductor wafer X.

[0035] The temperature calculation unit 22 performs at least the function of calculating the temperature of the semiconductor wafer X based on the value of the detection signal output from the sensor element 11 and the spectroscopic characteristic data stored in the spectroscopic characteristic data storage unit 21. The temperature calculated by the temperature calculation unit 22 is output as a temperature signal.

[0036] The temperature display unit 23 is equipped with a display or the like, receives the temperature signal, and displays the temperature on the display. The temperature calculation unit 22 and the temperature display unit 23 do not need to be located near the infrared detection unit 1, and their locations do not matter as long as they are connected by wire or wirelessly. Furthermore, a temperature control device (not shown) that receives the temperature signal and controls the temperature of the object may be provided, and a temperature measurement and control system may be configured by the radiation thermometer 100 and the temperature control device.

[0037] Next, an example of a method for calculating the temperature of the semiconductor wafer X by the temperature calculation unit 22 will be specifically described.

[0038] The temperature calculation unit 22 calculates the temperature of the semiconductor wafer X based on the values ​​of the detection signals (the first detected infrared amount and the second detected infrared amount) output from the first infrared detection unit 1 a and the second infrared detection unit 1 b, respectively, and the spectroscopic characteristics of the semiconductor wafer X indicated by the spectroscopic characteristic data.

[0039] The calculation principle is as follows: The total amount of infrared rays in a predetermined wavelength band incident on each infrared detection unit 1 is the sum of infrared rays A1 from the semiconductor wafer X, infrared rays A2 from behind the semiconductor wafer X, and infrared rays A3 reflected by the semiconductor wafer X. When the radiation thermometer 100 and the semiconductor wafer X are directly opposite to each other, A3 is infrared rays from the radiation thermometer 100 and is therefore known. Therefore, the ratio R of A1 to A2, R=A1 / A2, is the emissivity / transmittance of the semiconductor wafer X. This ratio R is stored in advance in the spectroscopic characteristic data storage unit 21.

[0040] Therefore, the object temperature is calculated using simultaneous equations or bisection from data from two different wavelength bands, i.e., the first detected infrared amount and the second detected infrared amount, and the known ratios R1 and R2 in each wavelength band.

[0041] Next, a specific calculation example will be given. １ (Tx), the spectral radiant energy E from the background of the semiconductor wafer X of the first infrared detecting unit 1a １ (Tb), the spectral radiant energy from the semiconductor wafer X of the second infrared detecting unit 1b is E ２ (Tx), the spectral radiant energy E from the background of the semiconductor wafer X of the second infrared detecting unit 1b ２ (Tb), the spectral radiant energy (first detected infrared amount) W detected by the first infrared detection unit 1a is １ Is W １ =R １ ・E １ (Tx) + (1 - R １ ) E １ (Tb) (1) Spectral radiant energy W detected by the second infrared detection unit 1b ２ Is W ２ =R ２ ・E ２ (Tx) + (1 - R ２ ) E ２ (Tb) (2)

[0042] Here, each detection infrared wavelength band is set so that R1≠R2, and there are two unknowns, the temperature Tx of the semiconductor wafer X and the disturbance temperature Tb. Therefore, by using equations (1) and (2), the following equation can be obtained: １ －１ [{W １ -R １ ・E １ (T ｘ )} / (1-R １ ) ]=E ２ －１ [{W ２ -R ２ ・E ２ (Tx)} / (1-R ２ ) ]・・・(3)

[0043] The temperature calculation unit 22 calculates the temperature of the semiconductor wafer X based on equation (3). Since the relationship E(T) between the spectral radiant energy and the temperature is monotonically increasing, there is only one solution that satisfies equation (3), and therefore the object temperature Tx can be obtained.

[0044] With the radiation temperature measuring device 100 configured as described above, there is a non-target object Z behind the measurement target object X that emits infrared rays that pass through the measurement field of view area, and even if the temperature of the non-target object Z changes, the effect of this can be eliminated.

[0045] Therefore, in order to shorten the time required for obtaining the temperature characteristics of the spectral characteristics of the semiconductor wafer X, the radiation temperature measuring device 100 of this embodiment further includes an individual spectral characteristic measuring unit 3 that measures the transmittance r and reflectance t of the semiconductor wafer X at a predetermined temperature, and the calculation device 2 is configured to further fulfill the functions of an individual spectral characteristic data receiving unit 24, an individual spectral characteristic data storage unit 25, a substrate physical property data storage unit 26, a correlation data storage unit 27, a substrate spectral characteristic calculation unit 28, a substrate spectral characteristic data storage unit 28c, and a spectral characteristic calculation unit 29.

[0046] 1, the individual spectral characteristic measurement unit 3 is provided separately from the processing chamber V and measures the transmittance t and reflectance r of the semiconductor wafer X before it is loaded into the processing chamber V. Specifically, as shown in FIG. 4, the individual spectral characteristic measurement unit 3 includes an infrared light source 31 that irradiates the semiconductor wafer X with infrared rays in a predetermined wavelength band, a reflectance sensor 32 that detects the infrared rays reflected by the semiconductor wafer X, a transmittance sensor 33 that detects the infrared rays that have transmitted through the semiconductor wafer X, and a temperature control mechanism that adjusts the temperature of the semiconductor wafer X.

[0047] Two infrared light sources 31 are provided corresponding to the first infrared detection unit 1 a and the second infrared detection unit 1 b, respectively. In this embodiment, each infrared light source 31 irradiates infrared light in a wavelength band that includes both of the detection wavelength bands of the two infrared detection units 1. Note that one infrared light source 31 may irradiate infrared light in all or part of the detection wavelength band (first detection infrared wavelength band) of one infrared detection unit 1, and the other infrared light source 31 may irradiate infrared light in all or part of the detection wavelength band (second detection infrared wavelength band) of the other infrared detection unit 1.

[0048] Two reflectance sensors 32 and two transmittance sensors 33 are also provided corresponding to each of the two infrared detection units 1. One reflectance sensor 32 and one transmittance sensor 33 detects infrared rays from one of the infrared light sources 31, while the other reflectance sensor 32 and one transmittance sensor 33 detects infrared rays from the other infrared light source 31. Here, a filter 34 that transmits infrared rays in the detection wavelength band of each infrared detection unit 1 is provided in front of the reflectance sensor 32 and the transmittance sensor 33.

[0049] The temperature control mechanism is provided so as to face the surface of the semiconductor wafer X, and is capable of controlling the temperature of the semiconductor wafer X to an arbitrary constant temperature (room temperature). The temperature control mechanism of this embodiment is set to keep the surface of the semiconductor wafer X at about 29°C (the predetermined temperature mentioned above), but it may also be possible to raise the temperature to a higher temperature such as 200°C.

[0050] The detection signals of the reflectance sensors 32 and the transmittance sensors 33, i.e., the detection signals indicating the transmittance t and reflectance r of each detection wavelength band at a set temperature (approximately 29°C), are output as individual spectral characteristic data to the individual spectral characteristic data receiving unit 24 and stored in the individual spectral characteristic data storage unit 25.

[0051] The substrate physical property data storage unit 26 stores substrate physical property data indicating information relating to the physical properties of the substrate X1 constituting the semiconductor wafer X. The substrate physical property data includes at least information relating to the electrical resistivity (Ω·cm) and thickness (mm) of the substrate X1, and may also include information relating to the impurity concentration, etc. This basic physical property data is input in advance by the user before measuring the radiation temperature.

[0052] The correlation data storage unit 27 stores first correlation data indicating the correlation between the electrical resistivity (or impurity concentration) of the substrate X1, the temperature, and the refractive index, and second correlation data indicating the correlation between the electrical resistivity (or impurity concentration) of the substrate X1, the temperature, and the extinction coefficient. Both the first correlation data and the second correlation data are obtained by experiment and are stored in the correlation data storage unit 27 in advance before measuring the radiation temperature.

[0053] The correlation indicated by the first correlation data may be, for example, a calculation model (i.e., a function with temperature and electrical resistivity as variables) that calculates the refractive index of the substrate X1 from the temperature and electrical resistivity (or impurity concentration) of the substrate X1, or a machine learning model that calculates, by machine learning, the correlation between the temperature and electrical resistivity of the substrate X1 and the refractive index of the substrate X1. The correlation indicated by this first correlation data is calculated in advance based on a huge amount of data (as exemplified in FIG. 5 ) that is obtained by, for example, preparing a huge number of samples with different electrical resistivities (or impurity concentrations) and measuring the refractive indexes of the samples at multiple temperatures.

[0054] The correlation indicated by the second correlation data may be, for example, a calculation model (i.e., a function with temperature and electrical resistivity as variables) that calculates the extinction coefficient of the substrate X1 from the temperature and electrical resistivity (or impurity concentration) of the substrate X1, or a machine learning model that calculates, by machine learning, the correlation between the temperature and electrical resistivity of the substrate X1 and the extinction coefficient of the substrate X1. The correlation indicated by this second correlation data is calculated in advance based on a huge amount of data (as exemplified in FIG. 6 ) that is obtained by, for example, preparing a huge number of samples with different electrical resistivities (or impurity concentrations) and measuring the extinction coefficients of the samples at multiple temperatures.

[0055] The substrate spectral characteristic calculation unit 28 calculates substrate spectral characteristic data indicating the temperature characteristics of the spectral characteristics of the substrate X1 itself, based on the substrate physical property data stored in the substrate physical property data storage unit 26 and the correlation data stored in the correlation data storage unit 27.

[0056] The spectral characteristic calculation unit 29 calculates, by calculation, spectral characteristic data indicating the temperature characteristics of the spectral characteristics of the semiconductor wafer X, based on the individual spectral characteristic data stored in the individual spectral characteristic data storage unit 25 and the substrate spectral characteristic data stored in the substrate spectral characteristic data storage unit 28 c.

[0057] More specifically, the substrate spectral characteristic calculation unit 28 calculates the temperature characteristics of the spectral characteristics of the substrate X1 itself using information on the physical properties of the substrate X1 indicated by the substrate physical property data (specifically, electrical resistivity and thickness), the correlation indicated by the first correlation data, and the correlation indicated by the second correlation data. The spectral characteristic calculation unit 29 then calculates information on the thin film X2 using the temperature characteristics of the spectral characteristics of the substrate X1 calculated by the substrate spectral characteristic calculation unit 28 and the transmittance t and reflectance r of the semiconductor wafer X at a predetermined temperature indicated by the individual spectral characteristic data. This information on the thin film X2 is information on the reflectance and transmittance at the interface between the thin film X2 and air at the predetermined temperature. The spectral characteristic calculation unit 29 then calculates the temperature characteristics of the spectral characteristics of the semiconductor wafer X using the calculated information on the thin film X2 at the predetermined temperature and the spectral characteristics of the substrate X1 itself at each temperature stored in the substrate spectral characteristic data storage unit 28c. A specific example of calculating the temperature characteristics of the spectral characteristics of the semiconductor wafer X will be given below.

[0058] (Step 1) Calculation of temperature characteristics of spectral characteristics of substrate X1 The substrate spectral characteristics calculation unit 28 calculates the temperature characteristics of the spectral characteristics of the substrate X1 itself (at least the characteristics indicating the energy ratio for each wavelength of the transmittance and reflectance) using information on the physical properties of the substrate X1 indicated by the substrate physical property data (specifically, the electrical resistivity and thickness), the correlation indicated by the first correlation data and the second correlation data, and the following equations (4) to (6).

[0059] T ｉ = e －４πｋｄ／λ ... (4) R ０ = {n ０ -(n ２ +k ２ ) １／２} ２ / {n ０ +(n ２ +k ２ ) １／２} ２ ... (5) T ０ = 1 - R ０ ...(6)

[0060] Here, T ｉ : transmittance of the substrate X1, R ０ : reflectance at the interface between the substrate X1 and air, T ０ : transmittance at the interface between the substrate X1 and air, k: extinction coefficient of the substrate X1, d: wafer thickness (m), λ: wavelength (m), n: refractive index of the substrate X1 ０ : refractive index of air.

[0061] Specifically, the substrate spectral characteristics calculation unit 28 applies the electrical resistivity of the substrate X1 to the correlation indicated by the first correlation data and the second correlation data to calculate the extinction coefficient k and refractive index n of the substrate X1, and then applies the calculated extinction coefficient k and refractive index n and the thickness of the substrate X1 to equations (4) to (6) to calculate the spectral characteristics of the substrate X1 itself. The substrate spectral characteristics calculation unit 28 performs such calculations for each of a plurality of temperatures to calculate the temperature characteristics of the spectral characteristics of the substrate X1. Then, the substrate spectral characteristics data indicating the temperature characteristics of the calculated spectral characteristics of the substrate X1 is stored in the substrate spectral characteristics data storage unit 28c.

[0062] (Step 2) Calculation of Information on Thin Film X2 Next, the spectral characteristic calculation unit 29 calculates information on the thin film X2 using the temperature characteristics of the spectral characteristics of the substrate X1 indicated by the substrate spectral characteristic data and the transmittance t and reflectance r of the semiconductor wafer X at a predetermined temperature indicated by the individual spectral characteristic data. The information on the thin film X2 calculated here is the reflectance R at the interface between the surface of the semiconductor wafer X (surface of the thin film X2) and air as viewed from the air side at a predetermined temperature. ｆ and the transmittance T at the interface between the surface of the semiconductor wafer X and the air as viewed from the air side. ｆ is.

[0063] A specific calculation example is shown below. As shown in FIG. 7, the reflectance at the interface between the surface of the semiconductor wafer X (the surface of the thin film X2) seen from the air side and the air is R ｆ , the reflectance at the interface between the surface of the semiconductor wafer X and the air as viewed from the substrate X1 side is R ｇ , the transmittance at the interface between the surface of the semiconductor wafer X and the air as viewed from the air side is T ｆ , the sum of the reflected components due to multiple reflections at the interface of the substrate X1 (i.e., the reflectance of the semiconductor wafer X) R and the sum of the transmitted components due to multiple reflections at the interface of the substrate X1 (i.e., the transmittance of the semiconductor wafer X) T are given by the following equations (7) and (8), respectively.

[0064] R = ΣR ｊ =R ｆ +T ｆ ２ T ｉ ２ R ０ (1+T ｉ ２ R ０ R ｇ +T ｉ ４ R ０ ２ R ｇ ２ +T ｉ ６ R ０ ３ R ｇ ３ +…) = R ｆ +T ｆ ２ T ｉ ２ R ０ / (1-T ｉ ２ R ０ R ｇ ) ... (7)

[0065] T = ΣT ｊ =T ０ T ｆ T ｉ (1+T ｉ ２ R ０ R ｇ +T ｉ ４ R ０ ２ R ｇ ２ +T ｉ ６ R ０ ３ R ｇ ３ +…) = T ０ T ｆ T ｉ / (1-T ｉ ２ R ０ R ｇ ) ... (8)

[0066] Formulas (7) and (8) are expressed as R ｆ and T ｆ When these are solved, the following equations (9) and (10) are obtained.

[0067] R ｆ = (RT ０ ２ -T ２ R ０ ) / (T ０ ２ -T ２ R ０ ２ T ｉ ２ ) ... (9) T ｆ = (1 - T ｉ ２ R ０ R ｆ ) T / T ０ T ｉ ...(10)

[0068] Here, as R and T, the reflectance r and reflectance t of the semiconductor wafer X at a predetermined temperature, which are stored as individual spectral characteristic data in the individual spectral characteristic data storage unit 25, are used. ０ , R ０ and T ｉ are the spectral characteristics of the substrate X1 itself, which are calculated in the above step 1 and stored in the substrate spectral characteristic data storage unit 28c. ０ , R ０ and T ｉ (6) and (7) to obtain the reflectance R of the thin film X2 at a predetermined temperature. ｆ and transmittance T ｆ Calculate.

[0069] (Step 3) Calculation of Temperature Dependence of Spectral Characteristics of Semiconductor Wafer X The spectral characteristics calculation unit 29 calculates the reflectance R ０ and transmittance T ０ , T ｉ and the calculated reflectance R of the thin film X2 at a predetermined temperature. ｆ and transmittance T ｆ and (8) are used to calculate the temperature characteristics of the spectral characteristics of the semiconductor wafer X. Specifically, the reflectance R and transmittance T of the semiconductor wafer X are calculated by applying the calculated information on the spectral characteristics of the substrate X1 and the thin film X2 to equations (7) and (8). By performing such calculations for each of a plurality of temperatures, the temperature characteristics of the spectral characteristics of the semiconductor wafer are calculated. Here, the information R of the thin film X2 calculated in step 2 is used to calculate the temperature characteristics of the spectral characteristics of the semiconductor wafer X. ｆ and T ｆ indicates the reflectance and transmittance of the thin film X2 at a predetermined temperature, but since the spectral characteristics of the thin film X2 itself have very little temperature dependency, they can be calculated as being the same value at each temperature.

[0070] Next, a method for measuring the radiation temperature of a plurality of semiconductor wafers X will be described. First, the semiconductor wafers X to be measured are transferred to a chamber for measuring spectral characteristics. An individual spectral characteristic measurement unit 3 provided in the chamber for measuring spectral characteristics measures the reflectance r and transmittance t of the semiconductor wafers X at a predetermined temperature. Spectral characteristic data indicating the measured reflectance r and transmittance t is stored in the individual spectral characteristic data storage unit 25. In this manner, in this embodiment, the individual spectral characteristics of the semiconductor wafers X are measured before they are transferred to the processing chamber V.

[0071] In addition, the user inputs information about the physical properties of the substrate X1 of the semiconductor wafer X (specifically, the thickness and the electrical resistivity (or the impurity concentration)) into the arithmetic device 2. The input information about the physical properties of the substrate X1 is stored in the substrate physical property data storage unit 26.

[0072] The substrate spectral characteristics calculation unit 28 calculates the temperature characteristics of the spectral characteristics of the substrate X1 using the input substrate physical property information and multiple correlation data stored in advance. The spectral characteristics calculation unit 29 then calculates the temperature characteristics of the spectral characteristics of the semiconductor wafer X using the measured individual spectral characteristics and the calculated substrate spectral characteristics, and stores the calculated temperature characteristics of the spectral characteristics in the spectral characteristics data storage unit 21.

[0073] Next, the semiconductor wafer X whose individual spectral characteristics have been measured is transferred to the processing chamber V. Here, the first infrared detecting unit 1a and the second infrared detecting unit 1b detect infrared rays from the semiconductor wafer X through a measurement window V1 formed in the processing chamber V. Then, the temperature calculating unit 22 calculates the temperature of the semiconductor wafer X based on the amount of infrared rays obtained by each infrared detecting unit 1 and the temperature characteristics of the calculated spectral characteristics.

[0074] With the radiation temperature measuring device 100 of this embodiment configured as described above, a user can acquire the temperature characteristics of the spectral characteristics of the semiconductor wafer X simply by measuring information on the physical properties of the substrate X1, such as the thickness and electrical resistivity, and the reflectance r and transmittance t of the semiconductor wafer X at a predetermined temperature, and inputting these measurement results. This eliminates the need to measure the spectral characteristics at multiple temperatures for each sample made of a different material and with a different film thickness, as was conventionally done, and significantly reduces the time required for advance preparations for measuring the temperature of the semiconductor wafer X.

[0075] The present invention is not limited to the above-described embodiment.

[0076] For example, in another embodiment of the radiation temperature measuring apparatus 100, the temperature calculation unit 22 may calculate the temperature of the semiconductor wafer X by taking into account chamber characteristic information, which is the characteristic of the process chamber V that accommodates the semiconductor wafer X. In this case, as shown in FIG. 8 , the arithmetic unit 2 may further function as a chamber characteristic data storage unit 2C that stores the chamber characteristic information. The chamber characteristic information relates to temperature correction parameters attributable to the process chamber V, specifically, the material (reflectance, etc.) of the surfaces of components present in the chamber V and the ratio of incident light intensity. This chamber characteristic information is input in advance by the user before measuring the radiation temperature. The temperature calculation unit 22 may fit the temperature correction parameter to the calculated spectral characteristic data and calculate the temperature of the semiconductor wafer X by using the spectral characteristic data to which the temperature correction parameter has been fitted. The temperature calculation unit 22 may calculate the temperature of the semiconductor wafer X using the calculated spectral characteristic data and then correct the calculated temperature using the temperature correction parameter.

[0077] In another embodiment of the radiation temperature measuring device 100, the correlation data storage unit 27 may store third correlation data indicating the correlation between the electrical resistivity (or impurity concentration) and thickness of the substrate and the temperature characteristics of the substrate's spectral characteristics. The correlation indicated by the third correlation data is obtained by preparing a large number of sample substrates with different thicknesses and electrical resistivities and measuring the transmittance and reflectance of the large number of sample substrates at a plurality of different temperatures. The correlation data storage unit 27 stores, as the third correlation data, a huge amount of data indicating the electrical resistivity (or impurity concentration) and thickness of the substrate obtained by measurement and the corresponding temperature characteristics of the substrate's spectral characteristics. In this other embodiment, the spectral characteristics calculation unit 29 may be configured to calculate the temperature characteristics of the substrate X1 itself by applying information about the physical properties of the substrate X1 (electrical resistivity and thickness) indicated by the substrate physical property data to the third correlation data.

[0078] Furthermore, although the radiation temperature measuring device 100 in the above-described embodiment is configured to calculate the substrate spectral characteristics, this is not limiting. In other embodiments, substrate spectral characteristic data indicating the spectral characteristics of the substrate X1 may be stored in advance in the substrate spectral characteristic data storage unit 28c. In this case, the calculation device 2 may not perform some or all of the functions of the substrate physical property data storage unit 26, the correlation data storage unit 27, and the substrate spectral characteristic calculation unit 28, as shown in FIG. 9 .

[0079] In another embodiment of the radiation temperature measuring device 100, the first correlation data may indicate the correlation between the electrical resistivity (or impurity concentration) of the substrate X1, the temperature, the doping species, and the refractive index. Similarly, the second correlation data may indicate the correlation between the electrical resistivity (or impurity concentration) of the substrate X1, the temperature, the doping species, and the extinction coefficient. The doping species is, for example, information indicating whether the substrate X1 is P-type or N-type. In this embodiment, the substrate physical property data storage unit 26 may receive information regarding the doping species of the substrate X1 from a user and store this information as the substrate physical property data. The spectroscopic characteristic calculation unit 29 may be configured to calculate the reflectance R and transmittance T of the semiconductor wafer X by taking into account information regarding the doping species in addition to the thickness and electrical resistivity of the substrate X1.

[0080] Furthermore, in the radiation temperature measuring device 100 of the above embodiment, the wavelength selection mechanism 14 is used to cause a single infrared detection unit 1 to function as multiple infrared detection units 1 (also referred to as a first infrared detection unit 1a and a second infrared detection unit 1b) having different detectable infrared wavelength bands, but this is not limited to this. As shown in FIG. 10 , the radiation temperature measuring device 100 of another embodiment may include a pair of physically different infrared detection units 1a, 1b, and optical filters 14a, 14b that transmit different infrared wavelength bands may be provided upstream or downstream of the respective optical systems 12a, 12b. This may result in the infrared detection wavelength bands (first detectable infrared wavelength band and second detectable infrared wavelength band) of the infrared detection units 1a, 1b being different from each other.

[0081] Furthermore, as shown in Fig. 11, the radiation temperature measuring device 100 of another embodiment may be provided with a beam splitter 15 to split the infrared light from the measurement object X into two beams, which are then introduced into the infrared detecting units 1a and 1b, respectively. Reference numeral 16 denotes a mirror. In this way, measurement can be performed in a shorter time than when the wavelength selecting mechanism 14 described above switches between the multiple optical filters 14a and 14b.

[0082] The measurement object in the above embodiment is a material where R1≠R2 and is not limited to a semiconductor wafer X as long as the thin film X2 is formed on the surface of the substrate. Furthermore, the radiation temperature measuring device 100 in the above embodiment is incorporated into a semiconductor manufacturing system, but it may also be a standalone device that is not incorporated into a semiconductor manufacturing system.

[0083] In the above embodiment, the substrate X1 is a silicon substrate, but is not limited to this. In other embodiments, the substrate X1 may be a wafer used in semiconductor processes, such as a single-crystal Ge (germanium) wafer or a compound wafer made of multiple elements, as long as it transmits infrared rays.

[0084] 12 , (1) a first measurement is performed in which only the semiconductor wafer X is placed between the heat source 31 and the transmittance sensor 33, and the radiant energy is measured by the sensors 32 and 33; (2) a second measurement is performed in which the semiconductor wafer X is placed between the heat source 31 and the transmittance sensor 33, and a shielding plate is further placed between the heat source 31 and the semiconductor wafer X, and the radiant energy is measured by the sensors 32 and 33; and (3) a third measurement is performed in which the radiant energy is measured by the sensors 32 and 33 without the semiconductor wafer X being placed between the heat source 31 and the transmittance sensor 33. The reflectance r and transmittance t of the semiconductor wafer X at a predetermined temperature are then calculated using the measured values ​​of the sensors 32 and 33 obtained by the first to third measurements.

[0085] Specifically, the radiant energy E measured by the reflectance sensor 32 in each measurement is １ , E ３, E ５ and the radiant energy E measured by the transmittance sensor 33. ２ , E ４ , E ６ can be expressed by the following equations (i)-(vi).

[0086] ・First measurement E １ = ε F １ (T ｘ ) + t・F １ (T ａｍｂ ) + r・F １ (T ｒ )-F １ (T Ｓ１ ) (i) E ２ = ε F ２ (T ｘ ) + t・F ２ (T ｒ ) + r・F ２ (T ａｍｂ )-F ２ (T Ｓ２ ) (ii) Second measurement E ３ = ε F １ (T ｘ ) + t・F １ (T ａｍｂ ) + r・F １ (T ａｍｂ )-F １ (T Ｓ１ ) (iii) E ４ = ε F ２ (T ｘ ) + t・F ２ (T ａｍｂ ) + r・F ２ (T ａｍｂ )-F ２ (T Ｓ２ ) (iv) ・Third measurement E ５ =F １ (T ａｍｂ )-F １ (T Ｓ１ ) (v) E ６ =F ２ (T ｒ )-F ２ (T Ｓ２ ) (vi)

[0087] T Ｓ１ : temperature of the reflectance sensor 32, T Ｓ２: temperature of the transmittance sensor 33, T ｘ : temperature of semiconductor wafer, T ａｍｂ :Ambient temperature, T ｒ : temperature of the heat source 31, ε: emissivity, r: reflectivity, and t: transmittance.

[0088] Here, a common filter is arranged in front of the reflectance sensor 32 and the transmittance sensor 33, and the sensitivity and offset voltage of the infrared sensors are different. １ (T) = α F ２ Assuming that it is (T) + β, the following equations (vii) to (ix) can be derived from equations (i) to (vi): α: sensitivity ratio of the infrared sensor β: offset voltage difference of the infrared sensor.

[0089] E １ -E ３ = r α {F ２ (T ｒ )-F ２ (T ａｍｂ ) (vii) E ２ -E ４ = t·{F ２ (T ｒ )-F ２ (T ａｍｂ ) (viii) E ６ -E ５ = [F ２ (T ｒ ) - {α F ２ (T ａｍｂ ) + β}] - {α F ２ (T Ｓ１ ) + β - F ２ (T Ｓ２ ) (ix)

[0090] Then, by solving equations (vii) to (ix) for reflectance r and transmittance t, the following equations (x) and (xi) are derived: Reflectance r = (E １ -E ３ ) / {α (E ６ -E ５ )} (x) Transmittance t=(E ２ -E ４ ) / (E ６ -E ５ ) (xi)

[0091] The radiant energy E measured by the reflectance sensor 32 and the transmittance sensor 33 in the first to third measurements １ ~E ６ By applying these to equations (x) and (xi), the reflectance r and transmittance t at a predetermined temperature can be calculated.

[0092] As described above, when the temperature calculation unit 22 calculates the temperature Tx of the semiconductor wafer X by bisection or the like based on the equation (3), there may be two solutions that satisfy the equation (3) depending on the conditions. For example, E １ (Tx) ≠ E ２ (Tx) and R １ and R ２ When the difference between the temperature Tx and the temperature Tb is small, the right and left sides of equation (3) may have a relationship like that shown in the graph of Fig. 13, and in this case, there are only two solutions that satisfy equation (3): Tx = 50°C (Tb = 300°C) and Tx = 75°C (Tb = 290°C). In particular, when the disturbance temperature Tb is excessively higher than the temperature Tx of the semiconductor wafer X, two solutions like this may occur.

[0093] Therefore, the inventors have conducted extensive research and found that the emissivity ε of the measurement object in the first detection infrared wavelength band １ and the emissivity ε in the second detection infrared wavelength band ２ The difference between １ -ε ２ ) is 0.4 or more, the magnitude relationship between the temperature Tx of the semiconductor wafer X and the disturbance temperature Tb, and the emissivity ε １ , ε ２ It was found that regardless of the absolute value of , there is only one solution that satisfies equation (3), and the temperature Tx can be measured with high accuracy. Specifically, since the first detectable infrared wavelength band and the second detectable infrared wavelength band are different, the slopes of the left and right sides of equation (3) relative to changes in the object temperature Tx also differ slightly. Under the conditions of Figure 13, when the difference between the ratio R1 and the ratio R2 is small, the difference in the slopes of the left and right sides becomes small at object temperatures of 0 to 100°C, which results in two solutions. On the other hand, when the emissivity ε of the measurement object in the first detectable infrared wavelength band is １ and the emissivity ε in the second detection infrared wavelength band ２ The difference between１ -ε ２ ) increases, the difference in the slope between the left and right sides of the equation for the object temperature Tx can be increased, so it is thought that there will be only one solution that satisfies equation (3).

[0094] Therefore, in another embodiment, the emissivity ε of the measurement object in the first detectable infrared wavelength band is １ and the emissivity ε in the second detection infrared wavelength band ２ It is preferable to select the first detectable infrared wavelength band, the second detectable infrared wavelength band, or the object to be measured so that the difference between the first detectable infrared wavelength band and the second detectable infrared wavelength band is 0.4 or more, and more preferably 0.5 or more. For example, when the first detectable infrared wavelength band is 7 μm or more and 9 μm or less, and the second detectable infrared wavelength band is 8 μm or more and 14 μm or less as in the above embodiment, if the object to be measured is a SiC semiconductor, as shown in FIG. １ and the emissivity ε in the second detection infrared wavelength band ２ The difference between these values ​​is 0.4 or more, and as shown in FIG. 15, there is only one solution that satisfies equation (3), and it is found that the temperature Tx can be calculated with high accuracy even if the disturbance temperature Tb is high.

[0095] Furthermore, the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications are possible without departing from the spirit of the present invention.

[0096] In a radiation thermometer for measuring the temperature of a measurement object having a thin film formed on the surface of a substrate, the time required to acquire the temperature characteristics of the spectroscopic characteristics of the measurement object before temperature measurement is shortened.

[0097] REFERENCE SIGNS LIST 100: Radiation temperature measuring device 1: Infrared detection unit 22: Temperature calculation unit 24: Individual spectral characteristic data reception unit 28c: Substrate spectral characteristic data storage unit 29: Spectral characteristic calculation unit X: Semiconductor wafer X1: Substrate X2: Thin film

Claims

1. A method for measuring the temperature of a measurement object having a substrate and a thin film formed on a surface of the substrate, an infrared detection unit that detects the amount of infrared radiation emitted from the measurement object; a substrate spectral characteristic data storage unit storing substrate spectral characteristic data indicating temperature characteristics of the substrate; an individual spectral characteristic data receiving unit that receives input of individual spectral characteristic data indicating information about the reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation unit that calculates a temperature characteristic of the spectral characteristic of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; a temperature calculation unit that calculates the temperature of the object to be measured based on the amount of infrared light detected by the infrared detection unit and the temperature characteristics of the spectroscopic characteristics of the object to be measured calculated by the spectroscopic characteristic calculation unit.

2. The spectral characteristic calculation unit calculating a reflectance and a transmittance of the thin film at a predetermined temperature based on the temperature characteristics of the spectral characteristics of the substrate indicated by the substrate spectral characteristic data and the reflectance and the transmittance of the measurement object at the predetermined temperature indicated by the individual spectral characteristic data; 2. The radiation thermometer according to claim 1, wherein the temperature characteristic of the spectral characteristics of the object to be measured is calculated using the calculated reflectance and transmittance of the thin film at a predetermined temperature and the temperature characteristic of the spectral characteristics of the substrate indicated by the substrate spectral characteristic data.

3. a substrate physical property data storage unit that stores substrate physical property data indicating information about the physical properties of the substrate; a correlation data storage unit that stores first correlation data indicating a correlation between the electrical resistivity, temperature, and refractive index of the substrate, and second correlation data indicating a correlation between the electrical resistivity, temperature, and extinction coefficient of the substrate; 3. The radiation thermometer according to claim 1, further comprising a substrate spectroscopic characteristics calculation unit that calculates temperature characteristics of the spectroscopic characteristics of the substrate based on the electrical resistivity of the substrate indicated by the substrate physical property data, the correlation indicated by the first correlation data, and the correlation indicated by the second correlation data.

4. The temperature of the measurement object accommodated in the chamber is measured, The radiation temperature measuring device according to claim 1 , wherein the temperature calculation unit corrects the temperature of the measurement object using a temperature correction parameter attributable to the chamber.

5. the infrared detection unit includes a first infrared detection unit and a second infrared detection unit that detect an amount of infrared light from the measurement object in a first detection infrared wavelength band and a second detection infrared wavelength band that are different from each other, 3. The radiation temperature measuring device according to claim 1, wherein the temperature calculation unit calculates the temperature of the object to be measured based on the amount of infrared light detected by each of the infrared detection units.

6. The radiation temperature measuring device according to claim 5 , wherein an optical system for collecting the infrared rays emitted from the object to be measured is shared between the first infrared detecting unit and the second infrared detecting unit.

7. The substrate is a wafer made of a single crystal material, and the thin film is SiO ２ 3. The radiation temperature measuring device according to claim 1, further comprising a film or a SiN film.

8. A method for measuring the temperature of a measurement object having a substrate and a thin film formed on a surface of the substrate, comprising: an infrared detection step of detecting an amount of infrared radiation emitted from the measurement object; a substrate spectral characteristic data storage step of storing substrate spectral characteristic data indicating temperature characteristics of the spectral characteristics of the substrate; an individual spectral characteristic data receiving step of receiving input of individual spectral characteristic data indicating information about reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation step of calculating a temperature characteristic of the spectral characteristic of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; a temperature calculation step of calculating the temperature of the object to be measured based on the detected amount of infrared radiation and the calculated temperature characteristics of the spectroscopic characteristics of the object to be measured.

9. A program for a radiation thermometer that measures the temperature of a measurement object having a substrate and a thin film formed on a surface of the substrate, an infrared detection unit that detects the amount of infrared radiation emitted from the measurement object; a substrate spectral characteristic data storage unit storing substrate spectral characteristic data indicating temperature characteristics of the substrate; an individual spectral characteristic data receiving unit that receives input of individual spectral characteristic data indicating information about the reflectance and transmittance of the measurement object at a predetermined temperature; a spectral characteristic calculation unit that calculates a temperature characteristic of the spectral characteristic of the measurement object based on the substrate spectral characteristic data and the individual spectral characteristic data; A program for a radiation temperature measuring device that causes a computer to function as a temperature calculation unit that calculates the temperature of the object to be measured based on the amount of infrared light detected by the infrared detection unit and the temperature characteristics of the spectroscopic characteristics of the object to be measured calculated by the spectroscopic characteristic calculation unit.