Substrate processing method, substrate processing apparatus, and hard mask

Abstract

Provided are a substrate processing method, a substrate processing apparatus, and a hard mask with which it is possible to obtain a stable etched shape.　The substrate processing method includes a step for preparing a substrate having a silicon-containing film, and a step for forming, on the silicon-containing film, a hard mask which is an amorphous film comprising tungsten, silicon, and nitrogen through sputtering.