Semiconductor manufacturing equipment parts

Abstract

The semiconductor manufacturing equipment member 10 includes a ceramic plate 20 having a circular wafer mounting surface 22a and an annular FR mounting surface 24a provided at a position one step lower than the wafer mounting surface 22a on the outer periphery of the wafer mounting surface 22a, and a cooling plate 30 provided on the lower surface of the ceramic plate 20. A connecting portion (frustum portion 22) connecting the wafer mounting surface 22a and the FR mounting surface 24a has a side surface (tapered surface 23a) of the truncated cone whose diameter increases from the wafer mounting surface 22a toward the FR mounting surface 24a.

Description

[Technical field]

[0001] The present invention relates to a member for a semiconductor manufacturing device. [Background technology]

[0002] A semiconductor manufacturing equipment member is used to perform CVD, etching, etc. on a wafer using plasma. For example, a semiconductor manufacturing equipment member disclosed in Patent Document 1 includes a ceramic plate and a cooling plate provided on the lower surface of the ceramic plate. The ceramic plate has a circular wafer mounting surface provided on the upper surface and an annular focus ring mounting surface provided on the outer periphery of the wafer mounting surface at a position one step lower than the wafer mounting surface. A connecting portion connecting the wafer mounting surface and the focus ring mounting surface has a side surface perpendicular to the wafer mounting surface. The focus ring mounted on the focus ring mounting surface has a step along the inner periphery of the upper end so as not to interfere with the wafer. The wafer mounted on the wafer mounting surface is placed in a state where it overhangs the wafer mounting surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-27641 A Summary of the Invention [Problem to be solved by the invention]

[0004] When a wafer is processed using such a semiconductor manufacturing equipment member, heat is input to the wafer by the plasma, but the wafer is cooled by a cooling plate. However, when the outer periphery of the wafer overhangs the wafer mounting surface, the outer periphery is not sufficiently cooled and can become locally hot.

[0005] The present invention has been made to solve the above-mentioned problems, and has as its main object to improve the ability to cool the outer periphery of the wafer. [Means for solving the problem]

[0006] [1] The semiconductor manufacturing equipment member of the present invention is a ceramic plate having a circular wafer mounting surface and an annular focus ring mounting surface provided at an outer periphery of the wafer mounting surface and one step lower than the wafer mounting surface; a cooling plate provided on a lower surface of the ceramic plate; Equipped with a connecting portion connecting the wafer mounting surface and the focus ring mounting surface has a side surface of a truncated cone whose diameter increases from the wafer mounting surface toward the focus ring mounting surface. It is something.

[0007] In this semiconductor manufacturing equipment member, the connecting portion connecting the wafer mounting surface and the focus ring mounting surface has a side surface of a truncated cone whose diameter increases from the wafer mounting surface toward the focus ring mounting surface (i.e., from top to bottom). Therefore, compared to a case where the side surface of the connecting portion is perpendicular to the wafer mounting surface, the number of thermal paths from the outer periphery of the wafer mounting surface toward the cooling plate increases. Therefore, the ability to cool the outer periphery of the wafer is improved.

[0008] Here, the "side surface of a truncated cone" includes not only the side surface of a truncated cone strictly speaking, but also the side surface of a truncated cone that is convex or concave (the same applies below).

[0009] [2] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the diameter of the wafer mounting surface may be smaller than the diameter of the wafer to be mounted. In this case, since the outer periphery of the wafer is particularly likely to become hot, it is highly meaningful to apply the present invention.

[0010] [3] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component according to the above item [1] or [2]), an angle of a side surface of the coupling portion with respect to the focus ring mounting surface may be 70° or less, thereby making it possible to sufficiently increase a thermal path from an outer periphery of the wafer mounting surface to the cooling plate.

[0011] [4] The semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [3] above) may include a focus ring mounted on the focus ring mounting surface, and a portion of the inner peripheral surface of the focus ring facing the side surface of the connecting portion may be a side surface of a truncated cone whose diameter increases from top to bottom. For example, when a wafer mounted on the wafer mounting surface is disposed so as to cover the inner peripheral portion of the focus ring from above, the inner peripheral portion of the focus ring is more likely to cool than other portions because there is no heat input from plasma. However, the portion of the inner peripheral surface of the focus ring facing the side surface of the connecting portion is a side surface of a truncated cone whose diameter increases from top to bottom, so that heat dissipation by the cooling plate is small. As a result, it is possible to prevent the inner peripheral portion of the focus ring, which is generally more likely to cool, from being excessively cooled.

[0012] [5] In the semiconductor manufacturing equipment component of the present invention (component for semiconductor manufacturing equipment described in [4] above), the angle of the portion with respect to the focus ring mounting surface may be larger than the angle of the side of the connecting portion with respect to the focus ring mounting surface. In this way, the gap between the side of the connecting portion of the ceramic plate and the portion of the inner circumferential surface of the focus ring facing the side of the connecting portion becomes wider toward the top, making it easier to prevent the focus ring from coming into contact with the ceramic plate.

[0013] [6] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [4] above), the angle of the portion with respect to the focus ring mounting surface may be smaller than the angle of the side of the connecting portion with respect to the focus ring mounting surface. This makes it possible to sufficiently reduce the contact area between the underside of the inner circumference of the focus ring and the focus ring mounting surface, thereby more effectively preventing the inner circumference of the focus ring, which generally cools easily, from being excessively cooled. [Brief description of the drawings]

[0014] [Figure 1] FIG. 2 is a longitudinal sectional view of a semiconductor manufacturing equipment member 10. [Diagram 2] FIG. 2 is a plan view of a semiconductor manufacturing equipment member 10. [Diagram 3] A partially enlarged view of Figure 1. [Figure 4] FIG. [Diagram 5] FIG. [Figure 6] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] A preferred embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a vertical cross-sectional view of a semiconductor manufacturing equipment member 10 (a cross-sectional view when cut along a plane including the central axis of the semiconductor manufacturing equipment member 10), Fig. 2 is a plan view of the semiconductor manufacturing equipment member 10, and Fig. 3 is a partial enlarged view of Fig. 1 (an enlarged view of a part surrounded by a circle in Fig. 1). In the following description, up and down, left and right, front and back, etc. may be used to explain, but up and down, left and right, front and back, etc. are merely relative positional relationships.

[0016] The semiconductor manufacturing equipment component 10 is used for performing CVD, etching, and the like on a wafer W by utilizing plasma, and is fixed to a mounting plate 84 provided inside a semiconductor process chamber 80. The semiconductor manufacturing equipment component 10 includes a ceramic plate 20, a cooling plate 30, a bonding layer 40, and a focus ring 60. Hereinafter, "focus ring" will be abbreviated as "FR."

[0017] The ceramic plate 20 has a circular wafer mounting surface 22a and an annular FR mounting surface 24a provided at a position one step lower than the wafer mounting surface 22a on the outer periphery of the wafer mounting surface 22a. A wafer W is mounted on the wafer mounting surface 22a, and an FR 60 is mounted on the FR mounting surface 24a. The ceramic plate 20 is made of a ceramic material such as alumina or aluminum nitride. The ceramic plate 20 is formed in a shape in which a truncated cone portion 22 is piled up on the upper surface of a flat cylindrical portion 24. In the ceramic plate 20, the upper surface of the truncated cone portion 22 is the wafer mounting surface 22a, and the annular surface of the upper surface of the cylindrical portion 24 excluding the truncated cone portion 22 is the FR mounting surface 24a. The truncated cone portion 22 is also a connecting portion that connects the wafer mounting surface 22a and the FR mounting surface 24a. Therefore, the connecting portion has a side surface (tapered surface 23a) of a truncated cone whose diameter increases from the wafer mounting surface 22a toward the FR mounting surface 24a. The angle α (see FIG. 3) of the tapered surface 23a with respect to the FR mounting surface 24a may be less than 90°, preferably 80° or less, and more preferably 70° or less. There is no particular limit to the lower limit of the angle α, but the angle α is preferably 20° or more. If the angle α is 20° or more, the tip of the FR 60 does not become too acute, and the risk of cracking the FR 60 is reduced, which is preferable. The diameter of the wafer mounting surface 22a is smaller than the diameter of the wafer W (e.g., 300 mm).

[0018] The truncated cone portion 22 of the ceramic plate 20 incorporates a wafer adsorption electrode 25. The wafer adsorption electrode 25 is formed of a material containing, for example, W, Mo, WC, MoC, or the like. The wafer adsorption electrode 25 is a disk-shaped or mesh-shaped monopolar electrostatic electrode. The layer of the ceramic plate 20 above the wafer adsorption electrode 25 functions as a dielectric layer. A DC power source for wafer adsorption (not shown) is connected to the wafer adsorption electrode 25.

[0019] The cylindrical portion 24 of the ceramic plate 20 incorporates an FR adsorption electrode 26. The FR adsorption electrode 26 is embedded in the cylindrical portion 24 at a position facing the FR mounting surface 24a. The FR adsorption electrode 26 is made of a material containing, for example, W, Mo, WC, MoC, etc. The FR adsorption electrode 26 is a ring-shaped or mesh-shaped monopolar electrostatic electrode. A layer of the ceramic plate 20 above the FR adsorption electrode 26 functions as a dielectric layer. The FR adsorption electrode 26 is connected to a DC power source for FR adsorption (not shown).

[0020] The cooling plate 30 is a disk member having a refrigerant flow passage 32 in which a refrigerant can circulate. The refrigerant flow passage 32 is formed in a single stroke from one end to the other end so as to cover the entire surface of the ceramic plate 20 in a plan view. In this embodiment, the diameter of the cooling plate 30 is the same as the diameter of the lower surface of the ceramic plate 20. The refrigerant flowing through the refrigerant flow passage 32 is preferably a liquid and is preferably electrically insulating. An example of an electrically insulating liquid is a fluorine-based inert liquid. The cooling plate 30 is made of a conductive material containing, for example, a metal. Examples of the conductive material include metals and composite materials. Examples of the metal include Al, Ti, Mo, and alloys thereof. Examples of the composite material include a metal matrix composite material (metal matrix composite (MMC)) and a ceramic matrix composite material (ceramic matrix composite (CMC)). Specific examples of such composite materials include a material containing Si, SiC, and Ti, and a material in which a SiC porous body is impregnated with Al and / or Si. A material containing Si, SiC, and Ti is called SiSiCTi, a material in which a porous SiC body is impregnated with Al is called AlSiC, and a material in which a porous SiC body is impregnated with Si is called SiSiC. It is preferable to select a material for the cooling plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20. The cooling plate 30 is also used as an RF electrode. A protective film made of an insulating material (e.g., alumina or yttria) may be formed on the outer peripheral surface of the cooling plate 30.

[0021] The bonding layer 40 bonds the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30. In this embodiment, the bonding layer 40 is an organic adhesive layer. The organic adhesive layer may be made of a resin such as an acrylic resin, a silicone resin, or an epoxy resin. In addition to the resin, a filler may be included.

[0022] The FR60 is an annular member placed on the FR mounting surface 24a, and is made of, for example, silicon. A step 62 is provided in the circumferential direction at the upper part of the inner peripheral surface of the FR60. The step 62 is provided to prevent the wafer W from interfering with the FR60. A portion 63 of the inner peripheral surface of the FR60 facing the tapered surface 23a is a side surface (tapered surface) of a truncated cone whose diameter increases from the top to the bottom. This portion 63 is not in contact with the tapered surface 23a. That is, a gap is formed between this portion 63 and the tapered surface 23a. Therefore, the FR60 is not easily affected by the heat of the truncated cone portion 22 of the ceramic plate 20. In this embodiment, the angle β (see FIG. 3) of the portion 63 with respect to the FR mounting surface 24a is the same as the angle α of the tapered surface 23a with respect to the FR mounting surface 24a.

[0023] Next, an example of use of the semiconductor manufacturing equipment member 10 will be described with reference to FIG. 1. The chamber 80 has a shower head 82 on the ceiling surface. The semiconductor manufacturing equipment member 10 is fixed to the installation plate 84 arranged inside the chamber 80. Specifically, the semiconductor manufacturing equipment member 10 is fixed to the installation plate 84 by placing an O-ring 88 having a diameter substantially the same as that of the cooling plate 30 between the lower surface of the cooling plate 30 and the upper surface of the installation plate 84, and fastening the installation plate 84 and the cooling plate 30 with a plurality of bolts 90 in this state. The bolt 90 includes a head and a foot. The bolt 90 is inserted from below into a stepped bolt insertion hole 86 that penetrates the installation plate 84 in the vertical direction, and the foot is screwed into the screw hole 34 provided on the lower surface of the cooling plate 30. At this time, the head of the bolt 90 engages with the stepped portion of the bolt insertion hole 86. The O-ring 88 is crushed in the vertical direction to exhibit sealing properties. If there are other locations that require sealing, place additional O-rings in those locations as well.

[0024] An FR 60 is placed on the FR placement surface 24a of the semiconductor manufacturing equipment member 10, and a disk-shaped wafer W is placed on the wafer placement surface 22a. In this state, a DC voltage is applied to the wafer suction electrode 25 to suction the wafer W onto the wafer placement surface 22a, and a DC voltage is applied to the FR suction electrode 26 to suction the FR 60 onto the FR placement surface 24a. Then, the inside of the chamber 80 is set to a predetermined vacuum atmosphere (or reduced pressure atmosphere), and a high-frequency voltage is applied between the shower head 82 and the cooling plate 30 while supplying a process gas from the shower head 82. Then, a plasma is generated between the cooling plate 30 and the shower head 82. The plasma is used to process the wafer W.

[0025] The FR 60 is also consumed as the wafers W are plasma-processed. However, since the FR 60 is thicker than the wafers W, the FR 60 is replaced after a plurality of wafers W have been processed.

[0026] When the semiconductor manufacturing equipment member 10 is used to process the wafer W, heat is input to the wafer W by the plasma, but the wafer W is cooled by the cooling plate 30. The outer periphery of the wafer W is in an overhanging state from the wafer mounting surface 22a because the diameter of the wafer W is larger than the diameter of the wafer mounting surface 22a. Therefore, the outer periphery of the wafer W is less likely to lose heat to the cooling plate 30 and is easily heated. However, in this embodiment, the connecting portion (frustum portion 22) connecting the wafer mounting surface 22a and the FR mounting surface 24a has a side surface (tapered surface 23a) of the truncated cone whose diameter increases from the wafer mounting surface 22a toward the FR mounting surface 24a. Therefore, compared to when the side surface of the connecting portion is perpendicular to the wafer mounting surface 22a, the thermal path from the outer periphery of the wafer mounting surface 22a toward the cooling plate 30 increases.

[0027] This point will be described in detail below. FIG. 4 is a partially enlarged view of a comparative embodiment (the embodiment of the prior art disclosed in Patent Document 1). In FIG. 4, the ceramic plate 20 is formed in a shape in which flat and small-diameter cylindrical portions 122 are stacked on the upper surface of a flat cylindrical portion 24. In the ceramic plate 20, the upper surface of the cylindrical portion 122 is the wafer mounting surface 22a. The cylindrical portion 122 is also a connecting portion that connects the wafer mounting surface 22a and the FR mounting surface 24a. The connecting portion has a side surface (vertical surface 123a) of the cylindrical portion 122. In addition, a portion 163 of the inner peripheral surface of the FR 60 that faces the vertical surface 123a is also a vertical surface. In FIG. 4, the same components as those in this embodiment are given the same reference numerals. In FIG. 4, the tapered surface 23a and the portion 63 of this embodiment are indicated by dotted lines. In this embodiment, the connecting portion (frustum portion 22) has a side surface (tapered surface 23a) of the truncated cone whose diameter increases from the wafer mounting surface 22a toward the FR mounting surface 24a, and therefore the number of thermal paths from the outer periphery of the wafer mounting surface 22a toward the cooling plate 30 increases compared to the comparative embodiment in which the connecting portion (cylindrical portion 122) has a vertical side surface (vertical surface 123a). Specifically, the number of paths increases in the area of ​​the right-angled triangular cross section shown by dot hatching in FIG. 4. As a result, in this embodiment, heat is easily removed from the overhanging outer periphery of the wafer W compared to the comparative embodiment.

[0028] Also, the wafer W placed on the wafer placement surface 22a is arranged to cover the inner periphery of the FR60 from above. In this case, in the comparative embodiment of FIG. 4, the inner periphery of the FR60 covered by the wafer W is more likely to cool than other parts because the heat input of the plasma is blocked by the wafer W. However, in this embodiment, the inner periphery of the FR60 covered by the wafer W has a shape in which a part of the inner periphery of the FR60 in the comparative embodiment is obliquely cut off, so that the heat dissipation by the cooling plate 30 is small. As a result, it is possible to prevent the inner periphery of the FR60, which is generally more likely to cool, from being excessively cooled.

[0029] According to the semiconductor manufacturing equipment member 10 described above, the connecting portion (frustum portion 22) has a side surface of a truncated cone whose diameter increases from the wafer mounting surface 22a toward the FR mounting surface 24a, and therefore, compared to the comparative embodiment of FIG. 4 in which the connecting portion has a vertical side surface (vertical surface 123a), the number of thermal paths from the outer periphery of the wafer mounting surface 22a toward the cooling plate 30 increases. Therefore, the ability to cool the outer periphery of the wafer W is improved.

[0030] Furthermore, the diameter of the wafer mounting surface 22a is smaller than the diameter of the mounted wafer W. In this case, the outer periphery of the wafer W is particularly likely to become hot, so that it is highly meaningful to apply the present invention.

[0031] Furthermore, the angle α of the tapered surface 23a with respect to the FR mounting surface 24a is preferably 70° or less. This makes it possible to sufficiently increase the thermal path from the outer periphery of the wafer mounting surface 22a to the cooling plate 30.

[0032] Furthermore, the portion 63 of the inner peripheral surface of the FR 60 facing the tapered surface 23a is a side surface of a truncated cone whose diameter increases from top to bottom, so that the inner peripheral portion of the FR 60, which is generally prone to cooling, can be prevented from being cooled excessively.

[0033] Furthermore, since the side surface of the connecting portion (frustum portion 22) of the ceramic plate 20 and the inner peripheral surface portion 63 of the FR 60 are both tapered, when the FR 60 is placed on the FR placement surface 24a, the placement position accuracy of the FR 60 is improved due to the self-alignment effect.

[0034] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms within the technical scope of the present invention.

[0035] In the above-mentioned embodiment, the angle α of the tapered surface 23a with respect to the FR mounting surface 24a and the angle β of the portion 63 (tapered surface) with respect to the FR mounting surface 24a are the same, but this is not particularly limited, and for example, the configurations shown in Fig. 5 and Fig. 6 may be adopted. In Fig. 5 and Fig. 6, the same components as those in the above-mentioned embodiment are denoted by the same reference numerals.

[0036] 5, the angle β of the portion 63 (tapered surface) with respect to the FR mounting surface 24a is larger than the angle α of the tapered surface 23a with respect to the FR mounting surface 24a (i.e., β>α). In this way, the gap between the portion 63 (tapered surface) of the FR 60 and the tapered surface 23a of the ceramic plate 20 becomes wider as it goes upward, making it easier to prevent the portion 63 (tapered surface) of the FR 60 from contacting the ceramic plate 20.

[0037] 6, the angle β of the portion 63 (tapered surface) with respect to the FR mounting surface 24a is smaller than the angle α of the tapered surface 23a with respect to the FR mounting surface 24a (i.e., β<α). This makes it possible to sufficiently reduce the contact area between the lower surface on the inner periphery side of the FR 60 and the FR mounting surface 24a, and therefore makes it possible to more effectively prevent the inner periphery of the FR 60, which is generally prone to cooling, from being excessively cooled.

[0038] 5 and 6, the difference between the angles α and β is preferably 30° or less, and more preferably 15° or less, which reduces the risk of another problem, such as discharge, occurring due to the space between the portion 63 of the FR 60 and the tapered surface 23a of the ceramic plate 20 becoming too large.

[0039] In the above-described embodiment, the tapered surface 23a of the ceramic plate 20 and the portion 63 of the inner peripheral surface of the FR 60 facing the tapered surface 23a are strictly defined as the side surface of a truncated cone, but are not particularly limited to this. For example, instead of the side surface of a strictly truncated cone, the side surface of the truncated cone may have a convex bulge or a concave recess. The same applies to the portion 63.

[0040] In the above-mentioned embodiment, a heater electrode for heating a wafer may be embedded in the truncated cone portion 22 of the ceramic plate 20. In this way, when the wafer W placed on the wafer placement surface 22a needs to be heated to a high temperature, the wafer W can be heated to a desired high temperature by passing electricity through the heater electrode for heating the wafer. Also, a heater electrode for heating the FR may be embedded in a position of the cylindrical portion 24 of the ceramic plate 20 facing the FR placement surface 24a. In this way, when the FR 60 placed on the FR placement surface 24a needs to be heated to a high temperature, the FR 60 can be heated to a desired high temperature by passing electricity through the heater electrode for heating the FR. When both the heater electrode for heating a wafer and the heater electrode for heating the FR are embedded in the ceramic plate 20, it is preferable that the temperature of each heater electrode can be adjusted individually.

[0041] In the above-described embodiment, an organic adhesive layer is used as the bonding layer 40, but the present invention is not limited thereto. For example, the bonding layer 40 may be an inorganic bonding layer such as a metal. The inorganic bonding layer may be a metal bonding layer formed of solder or a metal brazing material (e.g., a brazing material such as aluminum or titanium). The metal bonding layer may be formed by, for example, TCB (thermal compression bonding). TCB refers to a known method in which a metal bonding material is sandwiched between two members to be bonded, and the two members are pressure-bonded while being heated to a temperature equal to or lower than the solidus temperature of the metal bonding material. [Industrial Applicability]

[0042] The present invention can be used for members used in semiconductor manufacturing equipment, such as electrostatic chuck heaters, electrostatic chucks, and ceramic heaters. [Explanation of symbols]

[0043] 10 semiconductor manufacturing equipment member, 20 ceramic plate, 22 conical frustum portion, 22a wafer mounting surface, 23a tapered surface, 24 cylindrical portion, 24a FR mounting surface, 25 wafer adsorption electrode, 26 FR adsorption electrode, 30 cooling plate, 32 refrigerant flow path, 34 screw hole, 40 bonding layer, 60 focus ring (FR), 62 step, 63 portion, 80 chamber, 82 shower head, 84 installation plate, 86 bolt insertion hole, 88 O-ring, 90 bolt, 122 cylindrical portion, 123a vertical surface, 163 portion.

Claims

1. A ceramic plate having a horizontal circular wafer placement surface, a horizontal annular focus ring placement surface provided at a position one step lower than the wafer placement surface on the outer periphery of the wafer placement surface, and a connecting portion connecting the wafer placement surface and the focus ring placement surface. A cooling plate provided on the lower surface of the ceramic plate. It is provided with. The connecting portion is a side surface of a truncated cone whose diameter increases from the wafer placement surface toward the focus ring placement surface. The diameter of the upper surface of the truncated cone coincides with the outer diameter of the wafer placement surface, and the diameter of the lower surface of the truncated cone coincides with the inner diameter of the focus ring placement surface. A member for a semiconductor manufacturing apparatus.

2. The diameter of the wafer placement surface is smaller than the diameter of the wafer to be placed. The member for a semiconductor manufacturing apparatus according to Claim 1.

3. The angle of the side surface of the connecting portion with respect to the focus ring placement surface is 70° or less. The member for a semiconductor manufacturing apparatus according to Claim 1 or 2.

4. The member for a semiconductor manufacturing apparatus according to Claim 1 or 2, A focus ring placed on the focus ring placement surface It is provided with. The portion of the inner peripheral surface of the focus ring facing the side surface of the connecting portion is a side surface of a truncated cone whose diameter increases from top to bottom. A member for a semiconductor manufacturing apparatus.

5. The angle of the portion with respect to the focus ring placement surface is larger than the angle of the side surface of the connecting portion with respect to the focus ring placement surface. The member for a semiconductor manufacturing apparatus according to Claim 4.

6. The angle of the portion with respect to the focus ring placement surface is smaller than the angle of the side surface of the connecting portion with respect to the focus ring placement surface. The member for a semiconductor manufacturing apparatus according to Claim 4.

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