Semiconductor device and vehicle

Abstract

This semiconductor device is provided with: a first semiconductor element having a first electrode positioned on one side in a first direction; a first terminal facing the first semiconductor element; a first pillar electrically connected to the first electrode; and a first heat dissipation member electrically connected to the first terminal. In the first direction, a first flow path is provided between the first semiconductor element and the first terminal. The first pillar and the first heat dissipation member are accommodated in the first flow path. The first heat dissipation member is conductively bonded to the first pillar.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor module including a semiconductor device and a cooler. The cooler includes a housing having a hollow region and a heat sink. The housing has an opening that leads to the hollow region. The heat sink is attached to the housing so as to cover the opening. A portion of the heat sink is housed in the hollow region. The semiconductor device is joined to a portion of the heat sink that protrudes from the hollow region. When a coolant (such as cooling water) is flowed through the hollow region, the coolant comes into contact with the heat sink. This allows the semiconductor device to be efficiently cooled via the heat sink.

[0003] However, in the configuration of the semiconductor module disclosed in Patent Document 1, the cooling effect of the semiconductor device is not sufficient relative to the scale of the cooler.

[0004] International Publication No. 2017 / 094370

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can further improve cooling efficiency.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first semiconductor element having a first electrode located on one side in a first direction, a first terminal facing the first electrode, a first pillar electrically connected to the first electrode, and a first heat dissipation member electrically connected to the first terminal. A first flow path is provided between the first semiconductor element and the first terminal in the first direction. The first pillar and the first heat dissipation member are housed in the first flow path. The first heat dissipation member is conductively joined to the first pillar.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and a semiconductor device. The semiconductor device is electrically connected to the drive source. The semiconductor device further includes a second terminal, as compared to the semiconductor device provided by the first aspect of the present disclosure. The second terminal is located on the opposite side of a first semiconductor element included in the semiconductor device from the first terminal included in the semiconductor device. The first semiconductor element has a second electrode electrically connected to the second terminal. The second electrode is located on the opposite side of the first electrode included in the first semiconductor element in a first direction.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing a transparent view of the housing. FIG. 3 is a plan view corresponding to FIG. 2 , omitting the illustration of a third terminal, a plurality of third heat dissipation members, and a plurality of fourth heat dissipation members. FIG. 4 is a plan view corresponding to FIG. 3 , omitting the illustration of a third signal terminal, a fourth signal terminal, a plurality of second semiconductor elements, a plurality of second protective layers, a plurality of third pillars, a plurality of fourth pillars, a plurality of second gate pillars, a plurality of second detection pillars, a plurality of third leads, and a plurality of fourth leads. FIG. 5 is a plan view corresponding to FIG. 4 , omitting the illustration of a first terminal and a plurality of first heat dissipation members. FIG. 6 is a bottom view of the semiconductor device shown in FIG. 1 . FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3 . FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3 . FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3 . FIG. 10 is a partially enlarged view of FIG. 7 . FIG. 11 is a partially enlarged view of FIG. 8 , showing one of the multiple first semiconductor elements and its vicinity. FIG. 12 is a partially enlarged view of FIG. 8 , showing one of the multiple second semiconductor elements and its vicinity. FIG. 13 is a cross-sectional view showing a state in which a refrigerant flows downward in the semiconductor device shown in FIG. 1 . FIG. 14 is a schematic diagram of a vehicle equipped with the semiconductor device shown in FIG. 1 . FIG. 15 is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure, corresponding to FIG. 7 . FIG. 16 is a cross-sectional view of the semiconductor device shown in FIG. 15, corresponding to FIG. 8 . FIG. 17 is a partially enlarged view of FIG. 16 . FIG. 18 is a cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure, corresponding to FIG. 7 . FIG. 19 is a cross-sectional view of the semiconductor device shown in FIG. 18, corresponding to FIG. 8 . FIG. 20 is a partially enlarged view of FIG. 18 . FIG. 21 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure, corresponding to FIG. 7 . FIG. 22 is a cross-sectional view of the semiconductor device shown in FIG. 21, corresponding to FIG. 8 . Fig. 23 is a partially enlarged view of Fig. 22. Fig. 24 is a plan view of a semiconductor device according to a fifth embodiment of the present disclosure, and corresponds to Fig. 3. Fig. 25 is a plan view of the semiconductor device shown in Fig. 24, and corresponds to Fig. 5. Fig. 26 is a cross-sectional view taken along line XXVI-XXVI in Fig. 24. Fig. 27 is a plan view of a semiconductor device according to a sixth embodiment of the present disclosure, and corresponds to Fig. 3.FIG. 28 is a plan view of the semiconductor device shown in FIG. 27 and corresponds to FIG. 5 . FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 27 . FIG. 30 is a plan view of a semiconductor device according to a seventh embodiment of the present disclosure. FIG. 31 is a bottom view of the semiconductor device shown in FIG. 30 . FIG. 32 is a cross-sectional view taken along line XXXII-XXXII in FIG. 30 . FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII in FIG. 30 . FIG. 34 is a plan view of a semiconductor device according to an eighth embodiment of the present disclosure. FIG. 35 is a plan view of the semiconductor device shown in FIG. 34 and corresponds to FIG. 2 . FIG. 36 is a plan view of the semiconductor device shown in FIG. 34 and corresponds to FIG. 3 . FIG. 37 is a plan view of the semiconductor device shown in FIG. 34 and corresponds to FIG. 5 . FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 35 . FIG. 39 is a cross-sectional view taken along line XXXIX-XXXIX in FIG.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 13 . The semiconductor device A10 is generally used in power conversion circuits such as inverters. The semiconductor device A10 includes a first terminal 11, a second terminal 12, a third terminal 13, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a plurality of first protective layers 23, a plurality of second protective layers 24, a plurality of first heat dissipation members 31, a plurality of second heat dissipation members 32, a plurality of second heat dissipation members 32, a plurality of fourth heat dissipation members 34, and a housing 50. The semiconductor device A10 also includes a plurality of first pillars 41, a plurality of second pillars 42, a plurality of first gate pillars 43, a plurality of first detection pillars 44, a plurality of third pillars 45, a plurality of fourth pillars 46, a plurality of second gate pillars 47, and a plurality of second detection pillars 48. The semiconductor device A10 further includes a first signal terminal 16, a second signal terminal 17, a third signal terminal 18, a fourth signal terminal 19, a plurality of first leads 61, a plurality of second leads 62, a plurality of third leads 63, and a plurality of fourth leads 64. For ease of understanding, FIGS. 2 to 5 show the housing 50 in a see-through manner. The see-through housing 50 is shown in FIGS. 2 to 5 by imaginary lines (two-dot chain lines). For ease of understanding, the third terminal 13, the plurality of second heat dissipation members 32, and the plurality of fourth heat dissipation members 34 are omitted from FIG. 3 compared to FIG. 2. For ease of understanding, the third signal terminal 18, the fourth signal terminal 19, the plurality of second semiconductor elements 22, the plurality of second protective layers 24, the plurality of third pillars 45, the plurality of fourth pillars 46, the plurality of second gate pillars 47, the plurality of second detection pillars 48, the plurality of third leads 63, and the plurality of fourth leads 64 are not shown in Fig. 4 compared to Fig. 3. For ease of understanding, the first terminal 11 and the plurality of first heat dissipation members 31 are not shown in Fig. 5 compared to Fig. 4.

[0012] In the description of the semiconductor device A10, for convenience, the normal direction of a first mounting surface 121A of a second terminal 12 (described later) will be referred to as the "first direction z." Furthermore, the direction perpendicular to the first direction z will be referred to as the "second direction x." Furthermore, the direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0013] The semiconductor device A10 includes a half-bridge circuit including a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The semiconductor device A10 converts DC power supplied to the second terminal 12 and the third terminal 13 into AC power using the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. The second terminal 12 is a P terminal (positive electrode). The third terminal 13 is an N terminal (negative electrode). The converted AC power is input from the first terminal 11 to a power supply target such as a motor.

[0014] 7 to 9 , the housing 50 supports each of the first terminal 11, the second terminal 12, the third terminal 13, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, and the fourth signal terminal 19. The housing 50 is made of an insulator containing resin. Alternatively, the housing 50 may be made of a conductor containing a metal such as aluminum (Al).

[0015] 1 and 6 , the housing 50 has a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 faces one side in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 face opposite sides to each other in the second direction x. The third side surface 533 and the fourth side surface 534 face opposite sides to each other in the third direction y.

[0016] As shown in FIGS. 7 to 9 , the housing 50 has a hollow portion 54. Atmospheric air flows into the hollow portion 54. Alternatively, as shown in FIG. 13 , the hollow portion 54 may be constantly filled with the coolant 70. The hollow portion 54 includes a first flow path 541, a second flow path 542, and a third flow path 543. The first flow path 541 is provided between the plurality of first semiconductor elements 21 and the first terminal 11 in the first direction z. The second flow path 542 is provided between the second terminal 12 and the first flow path 541 in the first direction z. The second flow path 542 is connected to the first flow path 541. The third flow path 543 is provided between the first terminal 11 and the third terminal 13 in the first direction z. Here, the coolant 70 shown in FIG. 13 must be an insulator. In the present disclosure, the composition of the coolant 70 is not limited as long as the coolant 70 is an insulator.

[0017] 1 , 3 , 4 , and 6 , the housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 opens at the third side surface 533 and communicates with the hollow portion 54. The outlet 56 opens at the fourth side surface 534 and communicates with the hollow portion 54. In the housing 50, a refrigerant 70 shown in FIG. 13 flows from the inlet 55 into the hollow portion 54. The refrigerant 70 that has flowed into the hollow portion 54 is discharged from the outlet 56. As shown in FIG. 4 , the inlet 55 and the outlet 56 are located on opposite sides of each other in the second direction x with respect to the plurality of first heat dissipation members 31.

[0018] As shown in FIGS. 7 to 9 , the first terminals 11 are located on one side of the multiple first semiconductor elements 21 in the first direction z. The first terminals 11 are metal plates containing, for example, copper (Cu). The first terminals 11 have a first base 111 and a first extension 112. The first base 111 is housed in the hollow portion 54 of the housing 50 and is in contact with the first flow path 541 and the third flow path 543. The first base 111 is strip-shaped and extends in the second direction x. The first base 111 has a second mounting surface 111A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The first extension 112 is conductively bonded to one side of the first base 111 in the second direction x. The first extension 112 is supported by the housing 50. A portion of the first extension 112 protrudes outward from the second side surface 532 of the housing 50.

[0019] As shown in FIGS. 7 to 9 , the second terminals 12 are located on the opposite side of the first terminals 11 in the first direction z with respect to the plurality of first semiconductor elements 21. The second terminals 12 are metal plates containing, for example, copper. The second terminals 12 have a second base 121 and a second extension 122. The second base 121 is housed in the hollow portion 54 of the housing 50 and is in contact with the second flow path 542. The second base 121 is strip-shaped and extends in the second direction x. The second base 121 has a first mounting surface 121A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The second extension 122 is conductively bonded to one side of the second base 121 in the second direction x. The second extension 122 is supported by the housing 50. A portion of the second extension 122 protrudes outward from the first side surface 531 of the housing 50.

[0020] As shown in FIGS. 7 to 9 , the third terminal 13 is located on the opposite side of the first terminal 11 from the plurality of second semiconductor elements 22 in the first direction z. The third terminal 13 is a metal plate containing, for example, copper. The third terminal 13 has a third base 131 and a third extension 132. The third base 131 is housed in the hollow portion 54 of the housing 50 and is in contact with the third flow path 543. The third base 131 is strip-shaped and extends in the second direction x. The third extension 132 is conductively joined to one side of the third base 131 in the second direction x. The third extension 132 is supported by the housing 50. A portion of the third extension 132 protrudes outward from a first side surface 531 of the housing 50.

[0021] As shown in FIGS. 7 to 9 , the multiple first semiconductor elements 21 are positioned between the first base portion 111 of the first terminal 11 and the second base portion 121 of the second terminal 12 in the first direction z. The multiple first semiconductor elements 21 are housed in the second flow path 542 of the hollow portion 54 of the housing 50. All of the multiple first semiconductor elements 21 are identical elements. The multiple first semiconductor elements 21 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the multiple first semiconductor elements 21 may be field-effect transistors including metal-insulator-semiconductor field-effect transistors (MISFETs) or bipolar transistors such as insulated gate bipolar transistors (IGBTs). In the description of the semiconductor device A10, the multiple first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The multiple first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate has a composition containing silicon carbide (SiC). The first semiconductor elements 21 are arranged along the second direction x.

[0022] As shown in FIG. 11 , each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 , a first gate electrode 213 and a first protective film 214 .

[0023] 11 , the first electrode 211 faces the first base portion 111 of the first terminal 11. The first electrode 211 is electrically connected to the first terminal 11. A current corresponding to the power converted by the first semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the source of the first semiconductor element 21. The first electrode 211 is in contact with the first flow path 541 of the hollow portion 54 of the housing 50.

[0024] 11 , the second electrode 212 faces the first mounting surface 121A of the second base portion 121 of the second terminal 12. The second electrode 212 is electrically connected to the second terminal 12. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain of the first semiconductor element 21.

[0025] 11 , the first gate electrode 213 is located on the same side as the first electrode 211 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 5 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the first electrode 211 when viewed in the first direction z.

[0026] 11 , the first protective film 214 is located on the same side as the first electrode 211 in the first direction z. As viewed in the first direction z, the first protective film 214 surrounds the peripheries of the first electrode 211 and the first gate electrode 213. The first protective film 214 is an insulator. The first protective film 214 is formed by laminating, for example, a silicon dioxide (SiO 2 ) layer, a silicon nitride (Si 3 N 4 ) layer, and a polybenzoxazole (PBO) layer in this order. Note that the first protective film 214 may be a polyimide layer instead of a polybenzoxazole layer.

[0027] As shown in FIG. 5 and FIGS. 7 to 9 , each of the multiple first protective layers 23 covers at least a portion of one of the multiple first semiconductor elements 21. The multiple first protective layers 23 are insulators. The multiple first protective layers 23 are made of a material containing, for example, epoxy resin. As shown in FIG. 5 , when viewed in the first direction z, each of the multiple first protective layers 23 covers the entire periphery of one of the multiple first semiconductor elements 21. As shown in FIGS. 10 and 11 , each of the multiple first protective layers 23 covers a portion of the first protective film 214 of one of the multiple first semiconductor elements 21.

[0028] As shown in FIGS. 10 and 11 , each of the multiple first protective layers 23 has a first opening 231 and a second opening 232. The first opening 231 and the second opening 232 are located on opposite sides of each other in the first direction z. The first opening 231 exposes the first electrode 211 and the first gate electrode 213 of one of the multiple first semiconductor elements 21. The first opening 231 is connected to a first flow path 541 in the hollow portion 54 of the housing 50. The cross-sectional size of the first opening 231 perpendicular to the first direction z increases from the first electrode 211 toward the multiple first heat dissipation members 31. The second opening 232 exposes the second electrode 212 of one of the multiple first semiconductor elements 21. The cross-sectional size of the second opening 232 perpendicular to the first direction z increases from the second electrode 212 toward the second base portion 121 of the second terminal 12.

[0029] As shown in FIGS. 7 to 9 , the second semiconductor elements 22 are located on the opposite side of the first semiconductor elements 21 from the first terminal 11 in the first direction z. The second semiconductor elements 22 are also located between the first base 111 of the first terminal 11 and the third base 131 of the third terminal 13 in the first direction z. The second semiconductor elements 22 are housed in the third flow paths 543 of the hollow portion 54 of the housing 50. As viewed in the first direction z, the second semiconductor elements 22 individually overlap the first semiconductor elements 21. The second semiconductor elements 22 are identical to the first semiconductor elements 21. Therefore, the second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The second semiconductor elements 22 are arranged along the second direction x.

[0030] As shown in FIG. 12 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 , a second gate electrode 223 and a second protective film 224 .

[0031] 12 , the third electrode 221 faces the third base portion 131 of the third terminal 13. The third electrode 221 is electrically connected to the third terminal 13. A current corresponding to the power converted by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 corresponds to the source of the second semiconductor element 22. The third electrode 221 is in contact with the third flow path 543 of the hollow portion 54 of the housing 50.

[0032] 12 , the fourth electrode 222 faces the second mounting surface 111A of the first base portion 111 of the first terminal 11. The fourth electrode 222 is electrically connected to the first terminal 11. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 corresponds to the drain of the second semiconductor element 22.

[0033] 12 , the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. As shown in FIG. 3 , the area of ​​the second gate electrode 223 is smaller than the area of ​​the third electrode 221 when viewed in the first direction z.

[0034] 12 , the second protective film 224 is located on the same side as the third electrode 221 in the first direction z. As viewed in the first direction z, the second protective film 224 surrounds the periphery of each of the third electrode 221 and the second gate electrode 223. The second protective film 224 is an insulator. The composition of the second protective film 224 is the same as the composition of the first protective film 214 of each of the multiple first semiconductor elements 21.

[0035] As shown in FIG. 3 and FIGS. 7 to 9 , each of the multiple second protective layers 24 covers at least a portion of one of the multiple second semiconductor elements 22. The multiple second protective layers 24 are insulators. The multiple second protective layers 24 are made of a material containing, for example, epoxy resin. As shown in FIG. 3 , when viewed in the first direction z, each of the multiple second protective layers 24 covers the entire periphery of one of the multiple second semiconductor elements 22. As shown in FIG. 12 , each of the multiple second protective layers 24 covers a portion of the second protective film 224 of one of the multiple second semiconductor elements 22.

[0036] As shown in FIG. 12 , each of the multiple second protective layers 24 has a third opening 241 and a fourth opening 242. The third opening 241 and the fourth opening 242 are located on opposite sides of each other in the first direction z. The third electrode 221 and the second gate electrode 223 of one of the multiple second semiconductor elements 22 are exposed through the third opening 241. The third opening 241 is connected to a third flow path 543 in the hollow portion 54 of the housing 50. The cross section of the third opening 241 perpendicular to the first direction z expands from the third electrode 221 toward the multiple second heat dissipation members 32. The fourth opening 242 exposes the fourth electrode 222 of one of the multiple second semiconductor elements 22. The cross section of the fourth opening 242 perpendicular to the first direction z expands from the fourth electrode 222 toward the first base portion 111 of the first terminal 11.

[0037] As shown in FIGS. 10 and 11 , the multiple first pillars 41 are electrically connected to the first electrodes 211 of any of the multiple first semiconductor elements 21. The multiple first pillars 41 include, for example, copper. The multiple first pillars 41 are formed, for example, by plating. The multiple first pillars 41 are housed in a first flow path 541 in a hollow portion 54 of the housing 50. At least a portion of each of the multiple first pillars 41 is housed in a first opening 231 of any of the multiple first protective layers 23. In the semiconductor device A10, each of the multiple first pillars 41 is housed entirely in the first opening 231. The multiple first pillars 41 are spaced apart in a direction perpendicular to the first direction z. The dimension of each of the multiple first pillars 41 in the first direction z is smaller than the dimension of each of the multiple first heat dissipation members 31 in the first direction z.

[0038] As shown in FIGS. 10 and 11 , the multiple second pillars 42 are electrically connected to the second electrodes 212 of any of the multiple first semiconductor elements 21. The multiple second pillars 42 include, for example, copper. The multiple second pillars 42 are formed, for example, by plating. The multiple second pillars 42 are housed in the second flow paths 542 of the hollow portion 54 of the housing 50. At least a portion of each of the multiple second pillars 42 is housed in the second opening 232 of any of the multiple first protective layers 23. In the semiconductor device A10, each of the multiple second pillars 42 is housed entirely in the second opening 232. The multiple second pillars 42 are spaced apart in a direction perpendicular to the first direction z. The dimension of each of the multiple second pillars 42 in the first direction z is smaller than the dimension of each of the multiple first heat dissipation members 31 in the first direction z. Each of the multiple second pillars 42 is conductively bonded to the first mounting surface 121A of the second base portion 121 of the second terminal 12 via a bonding layer 29. This allows the second electrode 212 of each of the multiple first semiconductor elements 21 to be electrically connected to the second terminal 12. The bonding layer 29 is solder. Alternatively, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like.

[0039] 11 , the multiple first gate pillars 43 are individually and electrically connected to the first gate electrodes 213 of the multiple first semiconductor elements 21. The multiple first gate pillars 43 include, for example, copper. The multiple first gate pillars 43 are formed by, for example, plating. At least a portion of each of the multiple first gate pillars 43 is accommodated in a first opening 231 of one of the multiple first protective layers 23.

[0040] 5 , the multiple first detection pillars 44 are individually and electrically connected to the first electrodes 211 of the multiple first semiconductor elements 21. The multiple first detection pillars 44 include, for example, copper. The multiple first detection pillars 44 are formed by, for example, plating. At least a portion of each of the multiple first detection pillars 44 is housed in one of the first openings 231 of the multiple first protective layers 23.

[0041] As shown in FIG. 12 , the multiple third pillars 45 are electrically connected to the third electrodes 221 of any of the multiple second semiconductor elements 22. The multiple third pillars 45 include, for example, copper. The multiple third pillars 45 are formed by, for example, plating. The multiple third pillars 45 are housed in the third flow paths 543 of the hollow portion 54 of the housing 50. At least a portion of each of the multiple third pillars 45 is housed in the third opening 241 of any of the multiple second protective layers 24. In the semiconductor device A10, each of the multiple third pillars 45 is housed entirely in the third opening 241. The multiple third pillars 45 are spaced apart in a direction perpendicular to the first direction z. The dimension of each of the multiple third pillars 45 in the first direction z is smaller than the dimension of each of the multiple second heat dissipation members 32 in the first direction z.

[0042] As shown in FIG. 12 , the multiple fourth pillars 46 are electrically connected to the fourth electrodes 222 of any of the multiple second semiconductor elements 22. The multiple fourth pillars 46 include, for example, copper. The multiple fourth pillars 46 are formed by, for example, plating. The multiple fourth pillars 46 are housed in the third flow paths 543 of the hollow portion 54 of the housing 50. At least a portion of each of the multiple fourth pillars 46 is housed in a fourth opening 242 of any of the multiple second protective layers 24. In the semiconductor device A10, each of the multiple fourth pillars 46 is housed entirely in the fourth opening 242. The multiple fourth pillars 46 are spaced apart in a direction perpendicular to the first direction z. The dimension of each of the multiple fourth pillars 46 in the first direction z is smaller than the dimension of each of the multiple second heat dissipation members 32 in the first direction z. Each of the multiple fourth pillars 46 is conductively bonded to the second mounting surface 111A of the first base portion 111 of the first terminal 11 via the bonding layer 29. As a result, the fourth electrode 222 of each of the multiple second semiconductor elements 22 is electrically connected to the first terminal 11.

[0043] 12 , the second gate pillars 47 are individually and electrically connected to the second gate electrodes 223 of the second semiconductor elements 22. The second gate pillars 47 include, for example, copper. The second gate pillars 47 are formed by, for example, plating. At least a portion of each of the second gate pillars 47 is accommodated in one of the third openings 241 of the second protective layers 24.

[0044] 3 , the second detection pillars 48 are individually and electrically connected to the third electrodes 221 of the second semiconductor elements 22. The second detection pillars 48 include, for example, copper. The second detection pillars 48 are formed by, for example, plating. At least a portion of each of the second detection pillars 48 is accommodated in one of the third openings 241 of the second protective layers 24.

[0045] As shown in FIGS. 4 and 5 , the first signal terminal 16 is located on one side of the first terminal 11 and the second terminal 12 in the third direction y. The first signal terminal 16 is supported by the housing 50. The first signal terminal 16 is electrically connected to the first gate electrode 213 of each of the first semiconductor elements 21. A gate voltage for driving the first semiconductor elements 21 is applied to the first signal terminal 16. The first signal terminal 16 is a metal lead containing, for example, copper. The first signal terminal 16 has an inner portion 161 and an outer portion 162. The inner portion 161 is housed in the housing 50. A portion of the inner portion 161 is housed in the hollow portion 54 of the housing 50. The inner portion 161 includes a portion extending in the second direction x. The outer portion 162 is connected to the inner portion 161. As shown in FIG. 8 , the outer portion 162 protrudes outward from a third side surface 533 of the housing 50.

[0046] Each of the multiple first leads 61 is electrically connected to one of the first gate electrodes 213 of each of the multiple first semiconductor elements 21 and the first signal terminal 16. As shown in FIG. 5 , each of the multiple first leads 61 extends in the third direction y. As shown in FIG. 8 , a portion of each of the multiple first leads 61 is housed in a first flow path 541 in the hollow portion 54 of the housing 50. The multiple first leads 61 are metal leads containing, for example, copper. As shown in FIG. 11 , one side of each of the multiple first leads 61 in the third direction y is conductively joined to one of the multiple first gate pillars 43 via a bonding layer 29. The other side of each of the multiple first leads 61 in the third direction y is conductively joined to an inner portion 161 of the first signal terminal 16.

[0047] As shown in FIGS. 4 and 5 , the second signal terminal 17 is located on the same side as the first signal terminal 16 in the third direction y with respect to the first terminals 11 and 12. The second signal terminal 17 is supported by the housing 50. The second signal terminal 17 is electrically connected to the first electrodes 211 of the plurality of first semiconductor elements 21. A voltage having the same potential as the voltage applied to the first electrodes 211 of the plurality of first semiconductor elements 21 is applied to the second signal terminal 17. The second signal terminal 17 is a metal lead containing, for example, copper. The second signal terminal 17 has an inner portion 171 and an outer portion 172. The inner portion 171 is housed in the housing 50. Furthermore, a portion of the inner portion 171 is housed in the hollow portion 54 of the housing 50. The inner portion 171 includes a portion extending in the second direction x. 8 and 9 , the inner part 171 is located closer to the top surface 51 of the housing 50 than the inner part 161 of the first signal terminal 16. The outer part 172 is connected to the inner part 171. As shown in FIG. 9 , the outer part 172 protrudes outward from the third side surface 533 of the housing 50.

[0048] Each of the multiple second leads 62 is electrically connected to one of the first electrodes 211 of each of the multiple first semiconductor elements 21 and the second signal terminal 17. As shown in FIG. 5 , when viewed in the first direction z, each of the multiple second leads 62 extends in the third direction y. As shown in FIG. 9 , each of the multiple second leads 62 straddles the inner portion 161 of the first signal terminal 16. A portion of each of the multiple second leads 62 is housed in the first flow path 541 of the hollow portion 54 of the housing 50. The multiple second leads 62 are metal leads containing, for example, copper. One side of each of the multiple second leads 62 in the third direction y is conductively joined to one of the multiple first detection pillars 44. The other side of each of the multiple second leads 62 in the third direction y is conductively joined to the inner portion 171 of the second signal terminal 17.

[0049] As shown in FIGS. 2 and 3 , the third signal terminal 18 is located on one side of the first terminal 11 and the third terminal 13 in the third direction y. When viewed in the first direction z, the third signal terminal 18 overlaps the first signal terminal 16. The third signal terminal 18 is supported by the housing 50. The third signal terminal 18 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22. A gate voltage for driving the second semiconductor elements 22 is applied to the third signal terminal 18. The third signal terminal 18 is a metal lead containing, for example, copper. The third signal terminal 18 has an inner portion 181 and an outer portion 182. The inner portion 181 is housed in the housing 50. A portion of the inner portion 181 is housed in the hollow portion 54 of the housing 50. The inner portion 181 includes a portion extending in the second direction x. The outer portion 182 is connected to the inner portion 181. As shown in FIG. 8 , the outer part 182 protrudes outward from the third side surface 533 of the housing 50 .

[0050] Each of the multiple third leads 63 is electrically connected to one of the second gate electrodes 223 of each of the multiple second semiconductor elements 22 and the third signal terminal 18. As shown in FIG. 3 , each of the multiple third leads 63 extends in the third direction y. As shown in FIG. 8 , a portion of each of the multiple third leads 63 is housed in a third flow path 543 of the hollow portion 54 of the housing 50. The multiple third leads 63 are metal leads containing, for example, copper. As shown in FIG. 12 , one side of each of the multiple third leads 63 in the third direction y is conductively joined to one of the multiple second gate pillars 47 via a bonding layer 29. The other side of each of the multiple third leads 63 in the third direction y is conductively joined to an inner portion 181 of the third signal terminal 18.

[0051] As shown in FIGS. 2 and 3 , the fourth signal terminal 19 is located on the same side as the third signal terminal 18 in the third direction y with respect to the first terminal 11 and the third terminal 13. When viewed in the first direction z, the fourth signal terminal 19 overlaps the second signal terminal 17. The fourth signal terminal 19 is supported by the housing 50. The fourth signal terminal 19 is electrically connected to the third electrodes 221 of the second semiconductor elements 22. A voltage having the same potential as the voltage applied to the third electrodes 221 of the second semiconductor elements 22 is applied to the fourth signal terminal 19. The fourth signal terminal 19 is a metal lead containing, for example, copper. The fourth signal terminal 19 has an inner portion 191 and an outer portion 192. The inner portion 191 is housed in the housing 50. A portion of the inner portion 191 is housed in the hollow portion 54 of the housing 50. The inner portion 191 includes a portion extending in the second direction x. 8 and 9 , the inner part 191 is located closer to the top surface 51 of the housing 50 than the inner part 181 of the third signal terminal 18. The outer part 192 is connected to the inner part 191. As shown in FIG. 9 , the outer part 192 protrudes outward from the third side surface 533 of the housing 50.

[0052] Each of the multiple fourth leads 64 is electrically connected to one of the third electrodes 221 of each of the multiple second semiconductor elements 22 and the fourth signal terminal 19. As shown in FIG. 3 , when viewed in the first direction z, each of the multiple fourth leads 64 extends in the third direction y. As shown in FIG. 9 , each of the multiple fourth leads 64 straddles the inner portion 181 of the third signal terminal 18. A portion of each of the multiple fourth leads 64 is housed in the third flow path 543 of the hollow portion 54 of the housing 50. The multiple fourth leads 64 are metal leads containing, for example, copper. One side of each of the multiple fourth leads 64 in the third direction y is conductively joined to one of the multiple second detection pillars 48. The other side of each of the multiple fourth leads 64 in the third direction y is conductively joined to the inner portion 191 of the fourth signal terminal 19.

[0053] As shown in FIGS. 7 to 9 , the multiple first heat dissipation members 31 are electrically connected to the first base portion 111 of the first terminal 11. The multiple first heat dissipation members 31 are housed in the first flow passage 541 of the hollow portion 54 of the housing 50. The multiple first heat dissipation members 31 are, for example, rod members containing copper. Each of the multiple first heat dissipation members 31 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple first heat dissipation members 31 in the first direction z is conductively joined to the first base portion 111 by, for example, laser welding. As shown in FIGS. 10 and 11 , the other side of each of the multiple first heat dissipation members 31 in the first direction z is individually conductively joined to the multiple first pillars 41 via the bonding layer 29. As a result, the first electrode 211 of each of the multiple first semiconductor elements 21 is electrically connected to the first terminal 11.

[0054] As shown in FIGS. 7 and 8 , the multiple second heat dissipation members 32 are connected to the second base portion 121 of the second terminal 12. The multiple second heat dissipation members 32 are located on the opposite side of the multiple first semiconductor elements 21 from the second terminal 12 in the first direction z. The multiple second heat dissipation members 32 are housed in the hollow portion 54 of the housing 50. The multiple second heat dissipation members 32 are, for example, rod members containing copper. Each of the multiple second heat dissipation members 32 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple second heat dissipation members 32 in the first direction z is conductively joined to the second base portion 121 by, for example, laser welding.

[0055] As shown in FIGS. 7 to 9 , the multiple third heat dissipation members 33 are electrically connected to the third base portion 131 of the third terminal 13. The multiple third heat dissipation members 33 are housed in the third flow passage 543 of the hollow portion 54 of the housing 50. The multiple third heat dissipation members 33 are, for example, rod members containing copper. Each of the multiple third heat dissipation members 33 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple third heat dissipation members 33 in the first direction z is conductively joined to the first base portion 111 by, for example, laser welding. As shown in FIG. 12 , the other side of each of the multiple third heat dissipation members 33 in the first direction z is individually conductively joined to the multiple third pillars 45 via the bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the third terminal 13.

[0056] As shown in FIGS. 7 and 8 , the multiple fourth heat dissipation members 34 are connected to the third base portion 131 of the third terminal 13. The multiple fourth heat dissipation members 34 are located on the opposite side of the multiple second semiconductor elements 22 from the third terminal 13 in the first direction z. The multiple fourth heat dissipation members 34 are housed in the hollow portion 54 of the housing 50. The multiple fourth heat dissipation members 34 are, for example, rod members containing copper. Each of the multiple fourth heat dissipation members 34 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple fourth heat dissipation members 34 in the first direction z is conductively joined to the third base portion 131 by, for example, laser welding.

[0057] Next, a vehicle B equipped with the semiconductor device A10 will be described with reference to Fig. 14. The vehicle B is, for example, an electric vehicle (EV).

[0058] As shown in Fig. 14, vehicle B includes an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600 V.

[0059] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The semiconductor device A10 constitutes part of the inverter 831. Power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. Alternatively, unlike the power system shown in FIG. 14 , a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 including the semiconductor device A10 is connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B. This drives vehicle B. To drive vehicle B, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of accelerator pedal fluctuation. Therefore, semiconductor device A10 in inverter 831 is necessary to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0060] Next, the effects of the semiconductor device A10 will be described.

[0061] The semiconductor device A10 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. With this configuration, as shown in FIG. 13 , when a refrigerant 70 flows into the hollow portion 54 of the housing 50, the refrigerant 70 flows down the first flow path 541. As a result, the refrigerant 70 directly contacts at least the first heat dissipation member 31, thereby improving the cooling efficiency of the semiconductor device A10 compared to conventional devices. Therefore, with this configuration, the cooling efficiency of the semiconductor device A10 can be further improved.

[0062] The semiconductor device A10 further includes a first protective layer 23 that is an insulator. The first protective layer 23 covers at least a portion of the first semiconductor element 21. This configuration can protect the first semiconductor element 21 against external factors. In this case, it is preferable from the perspective of protecting the first semiconductor element 21 that the first protective layer 23 cover the entire periphery of the first semiconductor element 21 when viewed in the first direction z. Furthermore, by configuring the first protective layer 23 to cover a portion of the first protective film 214, leakage current from the first semiconductor element 21 can be effectively suppressed.

[0063] The first protective layer 23 has a first opening 231 that exposes the first electrode 211 of the first semiconductor element 21. At least a portion of the first pillar 41 is housed in the first opening 231. This configuration makes it possible to suppress external forces acting on the first pillar 41 in a direction perpendicular to the first direction z, particularly during the manufacture of the semiconductor device A10.

[0064] The first terminal 11 is in contact with the first flow path 541. With this configuration, the coolant 70 also comes into direct contact with the first terminal 11, thereby further improving the cooling efficiency of the semiconductor device A10.

[0065] The first electrode 211 of the first semiconductor element 21 is in contact with the first flow path 541. With this configuration, the coolant 70 also comes into direct contact with the first electrode 211, thereby further improving the cooling efficiency of the semiconductor device A10. In this case, the cross-sectional size of the first opening 231 of the first protective layer 23 in a direction perpendicular to the first direction z increases from the first electrode 211 to the first heat dissipation member 31. With this configuration, the coolant 70 can more easily flow into the first opening 231, and therefore the coolant 70 can more easily come into direct contact with the first pillar 41 in addition to the first electrode 211.

[0066] The semiconductor device A10 further includes a second terminal 12. The first semiconductor element 21 is electrically connected to the second terminal 12. A second flow path 542 connected to the first flow path 541 is provided between the second terminal 12 and the first flow path 541 in the first direction z. The second terminal 12 is in contact with the second flow path 542. With this configuration, the coolant 70 also comes into direct contact with the second terminal 12, thereby further improving the cooling efficiency of the semiconductor device A10.

[0067] The semiconductor device A10 further includes a first terminal 11, a second terminal 12, and a housing 50 that supports the second terminal 12. The housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 and the outlet 56 are located on opposite sides of the first heat dissipation member 31 in a direction perpendicular to the first direction z. This configuration allows the refrigerant 70 to flow downward so that the refrigerant 70 can easily come into direct contact with the first heat dissipation member 31.

[0068] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 15 to 17. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 15 corresponds to Figure 7, which shows the semiconductor device A10. Figure 16 corresponds to Figure 8, which shows the semiconductor device A10.

[0069] In the semiconductor device A20, the configurations of the plurality of first protective layers 23, the plurality of second protective layers 24, the plurality of second pillars 42, and the plurality of fourth pillars 46 differ from those of the semiconductor device A10.

[0070] 15 to 17 , each of the multiple second pillars 42 includes a portion that protrudes in the first direction z from the second opening 232 of one of the multiple first protective layers 23. Each of the multiple first protective layers 23 is spaced apart from the second base 121 of the second terminal 12. As a result, a portion of the second flow path 542 in the hollow portion 54 of the housing 50 is located between the first mounting surface 121A of the second base 121 and the multiple first protective layers 23. As a result, the second opening 232 of each of the multiple first protective layers 23 is connected to the second flow path 542. The second electrode 212 of each of the multiple first semiconductor elements 21 is in contact with the second flow path 542.

[0071] 15 and 16 , each of the multiple fourth pillars 46 includes a portion that protrudes in the first direction z from the fourth opening 242 of one of the multiple second protective layers 24. Each of the multiple second protective layers 24 is spaced apart from the first base portion 111 of the first terminal 11. As a result, a portion of the third flow path 543 in the hollow portion 54 of the housing 50 is located between the second mounting surface 111A of the first base portion 111 and the multiple second protective layers 24. As a result, the fourth opening 242 of each of the multiple second protective layers 24 is connected to the third flow path 543. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is in contact with the third flow path 543.

[0072] Next, the effects of the semiconductor device A20 will be described.

[0073] The semiconductor device A20 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the cooling efficiency of the semiconductor device A20 can be further improved. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0074] In the semiconductor device A20, a portion of the second flow path 542 is located between the second terminal 12 and the first protective layer 23 in the first direction z. The second electrode 212 of the first semiconductor element 21 is in contact with the second flow path 542. With this configuration, the coolant 70 also comes into direct contact with the second electrode 212, thereby further improving the cooling efficiency of the semiconductor device A20.

[0075] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 18 to 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 18 corresponds to Figure 7, which shows the semiconductor device A10. Figure 19 corresponds to Figure 8, which shows the semiconductor device A10.

[0076] In the semiconductor device A30, the configurations of the plurality of first protective layers 23 and the plurality of second protective layers 24 are different from those of the semiconductor device A10. Furthermore, the semiconductor device A30 does not include the plurality of second pillars 42 and the plurality of fourth pillars 46.

[0077] 20 , each of the multiple first protective layers 23 does not have a second opening 232. The second electrode 212 of each of the multiple first semiconductor elements 21 is individually exposed from one side in the first direction z of each of the multiple first protective layers 23. The second electrode 212 of each of the multiple first semiconductor elements 21 is conductively bonded to the first mounting surface 121A of the second base portion 121 of the second terminal 12 via the bonding layer 29.

[0078] As with the multiple first protective layers 23, each of the multiple second protective layers 24 does not have a fourth opening 242. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is individually exposed from one side in the first direction z of each of the multiple second protective layers 24. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is conductively bonded to the second mounting surface 111A of the first base portion 111 of the first terminal 11 via the bonding layer 29.

[0079] Next, the effects of the semiconductor device A30 will be described.

[0080] The semiconductor device A30 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the cooling efficiency of the semiconductor device A30 can be further improved. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0081] In the semiconductor device A30, the second electrode 212 of the first semiconductor element 21 is conductively joined to the second terminal 12. This configuration further shortens the length of the conductive path between the second terminal 12 and the second electrode 212. This makes it possible to reduce the parasitic inductance in the semiconductor device A30.

[0082] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 21 to 23. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 21 corresponds to Figure 7, which shows the semiconductor device A10. Figure 22 corresponds to Figure 8, which shows the semiconductor device A10.

[0083] In the semiconductor device A40, the configurations of the multiple first pillars 41 and the multiple third pillars 45 are different from those of the semiconductor device A30 described above.

[0084] 21 and 22 , a portion of each of the multiple first pillars 41 is covered by one of the multiple first protective layers 23. A portion of each of the multiple third pillars 45 is covered by one of the multiple second protective layers 24. As shown in FIG. 23 , in each of the multiple first protective layers 23, the first opening 231 includes multiple regions that are separated from each other in the first direction z. The multiple first pillars 41 are individually housed in the multiple regions.

[0085] Next, the effects of the semiconductor device A40 will be described.

[0086] The semiconductor device A40 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the cooling efficiency of the semiconductor device A40 can be further improved. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0087] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 24 to 26. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 24 corresponds to Figure 3, which shows the semiconductor device A10. Figure 25 corresponds to Figure 5, which shows the semiconductor device A10.

[0088] In the semiconductor device A50, the configurations of the plurality of first protective layers 23 and the plurality of second protective layers 24 are different from those of the semiconductor device A10.

[0089] 25 and 26 , the plurality of first protective layers 23 are connected to each other in the second direction x to form a single member. As shown in FIGS. 24 and 26 , the plurality of second protective layers 24 are also connected to each other in the second direction x to form a single member.

[0090] Next, the effects of the semiconductor device A50 will be described.

[0091] The semiconductor device A50 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the semiconductor device A50 can also achieve further improvement in cooling efficiency. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0092] In the semiconductor device A50, the multiple first protective layers 23 are connected to each other as a single member. With this configuration, the multiple first semiconductor elements 21 are sealed by the single first protective layer 23. This makes it possible to suppress misalignment of the multiple first semiconductor elements 21 with respect to the first terminals 11 and the second terminals 12 during the manufacture of the semiconductor device A50.

[0093] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 27 to 29. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 27 corresponds to Figure 3, which shows the semiconductor device A10. Figure 28 corresponds to Figure 5, which shows the semiconductor device A10.

[0094] In the semiconductor device A60, the configurations of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 are different from those of the semiconductor device A10.

[0095] 27 and 28 , the number of the plurality of first semiconductor elements 21 and the number of the plurality of second semiconductor elements 22 are both 2. As shown in Fig. 27 and 29 , when viewed in the first direction z, each of the plurality of second semiconductor elements 22 is spaced apart from the plurality of first semiconductor elements 21.

[0096] Next, the effects of the semiconductor device A60 will be described.

[0097] The semiconductor device A60 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the semiconductor device A60 can also achieve further improvement in cooling efficiency. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A60 achieves the same effects as the semiconductor device A10.

[0098] In the semiconductor device A60, when viewed in the first direction z, the second semiconductor element 22 is spaced apart from the first semiconductor element 21. This configuration can reduce the concentration of heat distribution in the first terminal 11 caused by heat generation from the first semiconductor element 21 and the second semiconductor element 22.

[0099] 30 to 33, a semiconductor device A70 according to a seventh embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted.

[0100] In the semiconductor device A70, the configurations of the second terminal 12 and the third terminal 13 are different from those of the semiconductor device A10. Furthermore, the semiconductor device A70 does not include the plurality of second heat dissipation members 32 and the plurality of fourth heat dissipation members 34.

[0101] 31 to 33 , the second base portion 121 of the second terminal 12 has a first exposed surface 121B that faces the side opposite to the side on which the multiple first semiconductor elements 21 are located in the first direction z. The first exposed surface 121B is exposed from the bottom surface 52 of the housing 50. The dimension of the second base portion 121 in the first direction z is larger than the dimension of the first base portion 111 of the first terminal 11 in the first direction z.

[0102] 30 , 32 , and 33 , the third base portion 131 of the third terminal 13 has a second exposed surface 131A that faces the side opposite to the side on which the multiple second semiconductor elements 22 are located in the first direction z. The second exposed surface 131A is exposed from the top surface 51 of the housing 50. The dimension of the third base portion 131 in the first direction z is larger than the dimension of the first base portion 111 of the first terminal 11 in the first direction z.

[0103] Next, the effects of the semiconductor device A70 will be described.

[0104] The semiconductor device A70 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the cooling efficiency of the semiconductor device A70 can be further improved. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A70 achieves the same effects as the semiconductor device A10.

[0105] In the semiconductor device A70, the second terminal 12 has a first exposed surface 121B facing in the first direction z opposite to the side on which the first semiconductor element 21 is located. The third terminal 13 has a second exposed surface 131A facing in the first direction z opposite to the side on which the second semiconductor element 22 is located. The first exposed surface 121B and the second exposed surface 131A are exposed from the housing 50. This configuration makes it possible to further reduce the dimension of the semiconductor device A70 in the first direction z.

[0106] Eighth Embodiment: A semiconductor device A80 according to an eighth embodiment of the present disclosure will be described with reference to FIGS. 34 to 39. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, FIG. 35 corresponds to FIG. 2, which shows the semiconductor device A10. FIG. 36 corresponds to FIG. 3, which shows the semiconductor device A10. FIG. 37 corresponds to FIG. 5, which shows the semiconductor device A10.

[0107] In semiconductor device A80, the configurations of the first terminal 11, the second terminal 12, the third terminal 13, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, the fourth signal terminal 19, the housing 50, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22 are different from those of semiconductor device A10.

[0108] 36 and 39 , the first extension portion 112 of the first terminal 11 is located on one side in the third direction y of the first base portion 111. As shown in FIGS. 34 and 39 , a portion of the first extension portion 112 protrudes outward from the third side surface 533 of the housing 50.

[0109] 35 , 37 , and 38 , the second extension portion 122 of the second terminal 12 and the third extension portion 132 of the third terminal 13 are located on the opposite side of the first extension portion 112 of the first terminal 11 in the third direction y with respect to the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. As shown in FIGS. 34 , 38 , and 39 , a portion of each of the second extension portion 122 and the third extension portion 132 protrudes outward from the fourth side surface 534 of the housing 50. The second extension portion 122 and the third extension portion 132 are spaced apart from each other in the second direction x.

[0110] 34 and 37 , the outer portion 162 of the first signal terminal 16 and the outer portion 172 of the second signal terminal 17 protrude to the outside from the first side surface 531 of the housing 50. As shown in FIG. 34 , the outer portion 182 of the third signal terminal 18 and the outer portion 192 of the fourth signal terminal 19 protrude to the outside from the first side surface 531.

[0111] 34 , the inlet 55 of the housing 50 opens at the second side surface 532 of the housing 50. The outlet 56 of the housing 50 opens at the first side surface 531.

[0112] As shown in FIGS. 37 to 39 , the multiple first semiconductor elements 21 include multiple first switching elements 21A and multiple first diodes 21B. The multiple first diodes 21B are individually connected in parallel to the multiple first switching elements 21A. Each of the multiple first switching elements 21A has a first electrode 211, a second electrode 212, and a first gate electrode 213. The multiple first switching elements 21A are transistors such as MOSFETs and IGBTs. In the semiconductor device A80, the multiple first switching elements 21A are, for example, MOSFETs. The multiple first diodes 21B have a first electrode 211 that serves as an anode and a second electrode 212 that serves as a cathode. In the semiconductor device A80, the multiple first diodes 21B function as freewheeling diodes for the multiple first switching elements 21A. In the semiconductor device A80, the multiple first diodes 21B are, for example, Schottky barrier diodes. Each of the multiple first pillars 41 is electrically connected to a first electrode 211 of any of the multiple first switching elements 21A and multiple first diodes 21B. Each of the multiple second pillars 42 is electrically connected to a second electrode 212 of any of the multiple first switching elements 21A and multiple first diodes 21B.

[0113] As shown in FIGS. 36 , 38 , and 39 , the second semiconductor elements 22 include a plurality of second switching elements 22A and a plurality of second diodes 22B. The second diodes 22B are individually connected in parallel to the second switching elements 22A. Each of the second switching elements 22A has a third electrode 221, a fourth electrode 222, and a second gate electrode 223. The second switching elements 22A are the same elements as the first switching elements 21A. The second diodes 22B have the third electrode 221 as an anode and the fourth electrode 222 as a cathode. In the semiconductor device A80, the second diodes 22B function as freewheeling diodes for the second switching elements 22A. The second diodes 22B are the same elements as the first diodes 21B. Each of the multiple third pillars 45 is electrically connected to a third electrode 221 of any of the multiple second switching elements 22A and multiple second diodes 22B. Each of the multiple fourth pillars 46 is electrically connected to a fourth electrode 222 of any of the multiple second switching elements 22A and multiple second diodes 22B.

[0114] Therefore, like the semiconductor device A80, the multiple first semiconductor elements 21 may be configured to include multiple types of elements rather than all being the same elements. Similarly, the multiple second semiconductor elements 22 may be configured to include multiple types of elements rather than all being the same elements.

[0115] Next, the effects of the semiconductor device A80 will be described.

[0116] The semiconductor device A80 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation member 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation member 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first pillar 41 and the first heat dissipation member 31 are housed in the first flow path 541. The first heat dissipation member 31 is conductively joined to the first pillar 41. Therefore, with this configuration, the cooling efficiency of the semiconductor device A80 can be further improved. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A80 achieves the same effects as the semiconductor device A10.

[0117] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0118] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a first semiconductor element having a first electrode located on one side in a first direction; a first terminal facing the first electrode; a first pillar electrically connected to the first electrode; and a first heat dissipation member electrically connected to the first terminal, wherein a first flow path is provided between the first semiconductor element and the first terminal in the first direction, the first pillar and the first heat dissipation member are housed in the first flow path, and the first heat dissipation member is conductively joined to the first pillar. Appendix 2. The semiconductor device according to Appendix 1, further comprising a first protective layer that is an insulator, the first protective layer covering at least a portion of the first semiconductor element. Appendix 3. The semiconductor device according to Appendix 2, wherein the first protective layer is provided with a first opening through which the first electrode is exposed, and at least a portion of the first pillar is housed in the first opening. Appendix 4. The semiconductor device according to Supplementary Note 3, wherein the first terminal is in contact with the first flow path. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the dimension of the first pillar in the first direction is smaller than the dimension of the first heat dissipation member in the first direction. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein the first electrode is in contact with the first flow path. Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the size of a cross section of the first opening perpendicular to the first direction increases from the first electrode toward the first heat dissipation member. Supplementary Note 8. The semiconductor device according to Supplementary Note 5, wherein a portion of the first pillar is covered with the first protective layer. Supplementary Note 9. The semiconductor device according to any one of Supplements 3 to 8, further comprising a second terminal located on the opposite side of the first terminal with respect to the first semiconductor element, wherein the first semiconductor element has a second electrode located on the opposite side of the first electrode in the first direction and conductive to the second terminal. Supplementary Note 10. 10. The semiconductor device according to claim 9, wherein a second flow path is provided between the second terminal and the first flow path in the first direction, the second flow path is connected to the first flow path, and the second terminal is in contact with the second flow path.Appendix 11. The semiconductor device according to Appendix 10, wherein the first protective layer covers the entire periphery of the first semiconductor element when viewed in the first direction. Appendix 12. The semiconductor device according to Appendix 11, further comprising a second pillar electrically connected to the second electrode, the second pillar being conductively joined to the second terminal, and the second pillar being housed in the second flow path. Appendix 13. The semiconductor device according to Appendix 12, wherein a second opening is provided in the first protective layer to expose the second electrode, and at least a portion of the second pillar is housed in the second opening. Appendix 14. The semiconductor device according to Appendix 13, wherein a portion of the second flow path is located between the second terminal and the first protective layer in the first direction. Appendix 15. The semiconductor device according to Appendix 14, wherein the second electrode is in contact with the second flow path. Appendix 16. The semiconductor device according to Appendix 15, wherein the first protective layer is spaced apart from the second terminal. Appendix 17. The semiconductor device according to Appendix 11, wherein the second electrode is conductively joined to the second terminal. Appendix 18. The semiconductor device according to Appendix 10, further comprising a housing, wherein the first terminal and the second terminal are supported by the housing, and wherein the housing is provided with a hollow portion including the first flow path and the second flow path. Appendix 19. The semiconductor device according to Appendix 18, further comprising a second heat dissipation member connected to the second terminal, wherein the second heat dissipation member is located on the opposite side of the second terminal to the first semiconductor element, and the second heat dissipation member is housed in the hollow portion. Appendix 20. A vehicle comprising: a drive source; and the semiconductor device according to Appendix 9, wherein the semiconductor device is electrically connected to the drive source. Appendix 21. The semiconductor device according to Appendix 9, further comprising a first signal terminal, wherein the first semiconductor element has a first gate electrode located on the same side as the first electrode in the first direction, and the first gate electrode is electrically connected to the first signal terminal. Appendix 22. 11. The semiconductor device according to claim 10, further comprising a second semiconductor element located on the opposite side of the first semiconductor element with respect to the first terminal, wherein the second semiconductor element is electrically connected to the first terminal.Appendix 23. The semiconductor device according to Appendix 22, wherein the second semiconductor element overlaps the first semiconductor element when viewed in the first direction. Appendix 24. The semiconductor device according to Appendix 22, wherein the second semiconductor element is spaced apart from the first semiconductor element when viewed in the first direction. Appendix 25. The semiconductor device according to Appendix 22, further comprising a third terminal located on the opposite side of the second semiconductor element from the first terminal, wherein the second semiconductor element is electrically connected to the third terminal, a third flow path is provided between the first terminal and the third terminal in the first direction, and the second semiconductor element is accommodated in the third flow path. Appendix 26. The semiconductor device according to Appendix 25, wherein the second terminal and the third terminal are in contact with the third flow path. Appendix 27. The semiconductor device according to Appendix 26, further comprising a third heat dissipation member electrically connected to the third terminal, wherein the second semiconductor element is electrically connected to the third heat dissipation member, and the third heat dissipation member is accommodated in the third flow path. Appendix 28. The semiconductor device according to Appendix 27, further comprising a fourth heat dissipation member connected to the third terminal, wherein the fourth heat dissipation member is located on the opposite side of the third terminal from the third heat dissipation member. Appendix 29. The semiconductor device according to Appendix 11, wherein the first semiconductor element has a first protective film located on the same side as the first electrode in the first direction, wherein the first protective film surrounds a periphery of the first electrode as viewed in the first direction, and the first protective layer covers a portion of the first protective film. Appendix 30. The semiconductor device according to Appendix 16, wherein a dimension of the second pillar in the first direction is larger than a dimension of the first pillar in the first direction. Appendix 31. The semiconductor device according to Appendix 18, wherein the housing has an inlet and an outlet each communicating with the hollow portion, wherein the inlet and the outlet are located on opposite sides of the first heat dissipation member in a direction perpendicular to the first direction. Appendix 32. 32. The semiconductor device of claim 31, wherein the second terminal has a first exposed surface facing the opposite side to the side on which the first semiconductor element is located in the first direction, and the first exposed surface is exposed from the housing.

[0119] A10 to A80: semiconductor device B: vehicle 11: first terminal 111: first base portion 111A: second mounting surface 112: first extension portion 12: second terminal 121: second base portion 121A: second mounting surface 121B: first exposed surface 122: second extension portion 13: third terminal 131: third base portion 131A: second exposed surface 132: third extension portion 16: first signal terminal 161: inner portion 162: outer portion 17: second signal terminal 171: inner portion 172: outer portion 18: third signal terminal 181: inner portion 182: outer portion 19: fourth signal terminal 191: inner portion 192: outer portion 21: first semiconductor element 21A: first switching element 21B: First diode 211: First electrode 212: Second electrode 213: First gate electrode 214: First protective film 22: Second semiconductor element 22A: Second switching element 22B: Second diode 221: Third electrode 222: Fourth electrode 223: Second gate electrode 224: Second protective film 23: First protective layer 231: First opening 232: Second opening 24: Second protective layer 241: Third opening 242: Fourth opening 29: Bonding layer 31: First heat dissipation member 32: Second heat dissipation member 33: Third heat dissipation member 34: Fourth heat dissipation member 41: First pillar 42: Second pillar 43: First gate pillar 44: First detection pillar 45: Third pillar 46: Fourth pillar 47: Second gate pillar 48: Second detection pillar 50: Housing 51: Top surface 52: Bottom surface 531-534: First to fourth side surfaces 54: Hollow portion 541-543: First to third flow paths 55: Inlet 56: Outlet 61-64: First to fourth leads 70: Refrigerant 81: On-board charger 82: Storage battery 83: Drive system 831: Inverter 832: Drive source z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a first semiconductor element having a first electrode located on one side in a first direction; a first terminal opposite the first electrode; a first pillar electrically connected to the first electrode; and a first heat dissipation member electrically connected to the first terminal, wherein a first flow path is provided between the first semiconductor element and the first terminal in the first direction, the first pillar and the first heat dissipation member are contained in the first flow path, and the first heat dissipation member is conductively joined to the first pillar.

2. The semiconductor device according to claim 1, further comprising a first protective layer made of an insulator, said first protective layer covering at least a portion of said first semiconductor element.

3. The semiconductor device according to claim 2, wherein the first protective layer has a first opening through which the first electrode is exposed, and at least a portion of the first pillar is accommodated in the first opening.

4. The semiconductor device according to claim 3, wherein the first terminal is in contact with the first flow path.

5. The semiconductor device according to claim 4, wherein the dimension of said first pillar in said first direction is smaller than the dimension of said first heat dissipation component in said first direction.

6. The semiconductor device according to claim 5, wherein said first electrode is in contact with said first flow path.

7. The semiconductor device according to claim 6, wherein a size of a cross section of said first opening perpendicular to said first direction increases from said first electrode toward said first heat dissipation member.

8. The semiconductor device according to claim 5, wherein a portion of the first pillar is covered with the first protective layer.

9. A semiconductor device as described in any one of claims 3 to 8, further comprising a second terminal located on the opposite side of the first terminal with respect to the first semiconductor element, the first semiconductor element having a second electrode located on the opposite side of the first electrode in the first direction and conductive to the second terminal.

10. The semiconductor device according to claim 9, wherein a second flow path is provided between the second terminal and the first flow path in the first direction, the second flow path is connected to the first flow path, and the second terminal is in contact with the second flow path.

11. The semiconductor device according to claim 10, wherein, when viewed in the first direction, the first protective layer covers the entire periphery of the first semiconductor element.

12. The semiconductor device according to claim 11, further comprising a second pillar electrically connected to the second electrode, the second pillar being conductively joined to the second terminal, and the second pillar being accommodated in the second flow path.

13. The semiconductor device according to claim 12, wherein the first protective layer has a second opening through which the second electrode is exposed, and at least a portion of the second pillar is accommodated in the second opening.

14. The semiconductor device according to claim 13, wherein a portion of the second flow path is located between the second terminal and the first protective layer in the first direction.

15. The semiconductor device according to claim 14, wherein the second electrode is in contact with the second flow path.

16. The semiconductor device according to claim 15, wherein the first protective layer is spaced apart from the second terminal.

17. The semiconductor device according to claim 11, wherein the second electrode is conductively connected to the second terminal.

18. The semiconductor device according to claim 10, further comprising a housing, the first terminal and the second terminal being supported by the housing, and the housing having a hollow portion including the first flow path and the second flow path.

19. The semiconductor device described in claim 18, further comprising a second heat dissipation member connected to the second terminal, the second heat dissipation member being located on the opposite side of the second terminal to the first semiconductor element, and the second heat dissipation member being housed in the hollow portion.

20. A vehicle comprising: a driving source; and the semiconductor device according to claim 9, wherein the semiconductor device is electrically connected to the driving source.