Display device and electronic apparatus

Abstract

Provide is a display device with good light extraction efficiency. The display device has a convex lens on a light-emitting element, wherein a second layer is provided on and in contact with the convex lens and a first layer is provided on and in contact with the second layer. In this configuration, by providing steps in which the refractive index sequentially decreases in the advancement direction of light, steps in the refractive index can be reduced at interfaces and reflection at the interfaces can be reduced. Accordingly, the light extraction efficiency of the display device can be increased.

Description

Display devices and electronic devices

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, and an operation method thereof or a manufacturing method thereof.

[0003] Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are examples of a semiconductor device. In addition, a memory device, a display device, an imaging device, and an electronic device may include a semiconductor device.

[0004] Goggle-type devices and eyeglass-type devices have been developed as electronic devices for XR (a collective term for virtual reality (VR), augmented reality (AR), mixed reality (MR), etc.).

[0005] Representative display panels used in these electronic devices include display devices equipped with liquid crystal elements, and display devices equipped with organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes).

[0006] A display device equipped with an organic EL element does not require a backlight, which is necessary in a liquid crystal display device, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0007] JP 2018-107444 A

[0008] Catadioptric systems used in VR devices and the like utilize selective reflection of polarized light, resulting in insufficient light utilization efficiency. Furthermore, AR devices require high display visibility even in strong external light. Therefore, XR devices require increased display brightness. Increasing the brightness of display devices increases power consumption and reduces the reliability of display devices. Therefore, a display device with high light extraction efficiency is desired.

[0009] Furthermore, the goggle-type device is a device worn on the body, and is preferably small and lightweight to reduce the burden on the body.

[0010] Therefore, an object of one embodiment of the present invention is to provide a display device with high light extraction efficiency. Another object is to provide a display device with high color-emitting performance. Another object is to provide a display device with low power consumption. Another object is to provide a display device whose manufacturing process is simplified. Another object is to provide an electronic device including the display device. Another object is to provide a small and lightweight electronic device. Another object is to provide a novel electronic device.

[0011] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become clear from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0012] One embodiment of the present invention relates to a display device with high light extraction efficiency.

[0013] One embodiment of the present invention is a light-emitting element including a convex lens provided over a light-emitting element, a second layer provided in contact with the convex lens, and a first layer provided in contact with the second layer, wherein the refractive index of the first layer is n １ , the refractive index of the second layer is n ２ , the refractive index of the convex lens is n ３ When this is the case, n １ <n ２ <n ３The convex lens is a display device that is provided in a pair with a light-emitting element.

[0014] The light emitting elements can emit red, green or blue light.

[0015] Another embodiment of the present invention is a light-emitting element including a convex lens provided over a light-emitting element, a second layer provided in contact with the convex lens, and a first layer provided in contact with the second layer, wherein the refractive index of the first layer is n １ , the refractive index of the second layer is n ２ , the refractive index of the convex lens is n ３ When this is the case, n １ <n ２ <n ３ and the convex lens is provided for each of the plurality of light-emitting elements.

[0016] The light-emitting element emits white light and can have a colored layer between the light-emitting element and the convex lens. The light-emitting element has a configuration in which an organic layer is sandwiched between a pixel electrode and a common electrode, the common electrode being an electrode shared by a plurality of light-emitting elements, and the common electrode and the convex lens have the same outer shape when viewed from above.

[0017] The first wiring may be connected to the common electrode in a region overlapping with the convex lens.

[0018] The liquid crystal display device may have adjacent first and second pixels, each having a light-emitting element, the first pixel emitting a different color of light from the second pixel, and a gap surrounded by a second layer or a gap surrounded by the second layer and the first layer may be provided between the first and second pixels.

[0019] The light-emitting element is preferably an organic EL element.

[0020] The second layer can be formed of an inorganic material, or the second layer can be formed of an organic material.

[0021] An electronic device using the display device as a light source and provided with a catadioptric system on the display surface side of the display device is also an embodiment of the present invention.An electronic device having a touch sensor on the opposite side of the display surface of the display device is also an embodiment of the present invention.

[0022] According to one embodiment of the present invention, a display device with high light extraction efficiency can be provided. Alternatively, a display device with high color-emitting performance can be provided. Alternatively, a display device with low power consumption can be provided. Alternatively, a display device whose manufacturing process is simplified can be provided. Alternatively, an electronic device including the display device can be provided. Alternatively, a small and lightweight electronic device can be provided. Alternatively, a novel electronic device can be provided.

[0023] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0024] FIG. 1 is a diagram illustrating a display unit of a display device. FIGS. 2A to 2C are diagrams illustrating a display unit of a display device. FIG. 3 is a diagram illustrating a display unit of a display device. FIGS. 4A to 4C are diagrams illustrating a display unit of a display device. FIGS. 5A and 5B are diagrams illustrating a display unit of a display device. FIGS. 6A and 6B are diagrams illustrating a display unit of a display device. FIGS. 7A to 7C are diagrams illustrating a display unit of a display device. FIGS. 8A to 8C are diagrams illustrating a display unit of a display device. FIGS. 9A to 9E are diagrams illustrating a display device. FIGS. 10A to 10G are diagrams illustrating an example configuration of a pixel. FIGS. 11A and 11B are diagrams illustrating an eyeglass-type device. FIGS. 12A to 12D are diagrams illustrating an eyeglass-type device. FIGS. 13A and 13B are diagrams illustrating an eyeglass-type device. FIGS. 14A and 14B are diagrams illustrating an example configuration of a display panel. FIG. 15 is a diagram illustrating an example configuration of a display panel. FIG. 16 is a diagram illustrating an example configuration of a display panel. FIG. 17 is a diagram illustrating an example configuration of a display panel. Fig. 18 is a diagram illustrating a configuration example of a display panel. Fig. 19 is a diagram illustrating a configuration example of a display panel. Fig. 20 is a diagram illustrating a configuration example of a display panel. Figs. 21A and 21B are diagrams illustrating transistors. Fig. 22 is a diagram illustrating a configuration example of a display panel. Figs. 23A to 23C are diagrams illustrating a configuration example of a display panel.

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art will readily understand that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. Hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0026] Furthermore, even if a circuit diagram shows a single element, that element may be configured as multiple elements as long as there is no functional problem. For example, multiple transistors operating as switches may be connected in series or parallel. Also, a capacitor may be divided and placed in multiple locations.

[0027] Furthermore, one conductor may have multiple functions, such as wiring, electrode, and terminal, and in this specification, multiple names may be used for the same element. Also, even when elements are shown as being directly connected to each other on a circuit diagram, in reality, the elements may be connected via one or more conductors, and in this specification, such a configuration is also included in the category of direct connection.

[0028] In this specification, "connection" includes, as an example, "electrical connection." Note that the term "electrical connection" is sometimes used to define the connection relationship between circuit elements as a physical entity. Furthermore, "electrical connection" includes "direct connection" and "indirect connection." "A and B are directly connected" means that A and B are connected without the intervention of a circuit element (e.g., a transistor, a switch, etc.; wiring is not considered a circuit element). On the other hand, "A and B are indirectly connected" means that A and B are connected via one or more circuit elements.

[0029] For example, assuming that a circuit including A and B is operating, if there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B, then it can be defined that "A and B are indirectly connected" as objects. Note that even if there is a time during the operation of the circuit when no electrical signal is exchanged or an interaction of electrical potential occurs between A and B, it can still be defined that "A and B are indirectly connected" as long as there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B.

[0030] An example of a case where "A and B are indirectly connected" is when A and B are connected via the source and drain of one or more transistors. On the other hand, an example of a case where it cannot be said that "A and B are indirectly connected" is when an insulator is present in the path from A to B. Specifically, there are cases where a capacitive element is connected between A and B, and cases where a gate insulating film of a transistor is present between A and B. Therefore, it cannot be said that "the gate (A) of a transistor and the source or drain (B) of the transistor are indirectly connected."

[0031] Another example of a case where it cannot be said that "A and B are indirectly connected" is when multiple transistors are connected via their sources and drains to the path from A to B, and a constant potential V is supplied to a node between one transistor and another transistor from a power supply, GND, etc.

[0032] Embodiment 1 In this embodiment, a display device and an electronic device according to one embodiment of the present invention will be described.

[0033] One embodiment of the present invention is a display device with high light extraction efficiency. The display device includes a light-emitting element (also referred to as a light-emitting device) as a display element and a convex lens over the light-emitting element. A second layer is provided in contact with the convex lens, and a first layer is provided in contact with the second layer.

[0034] Here, the refractive index of the material constituting the first layer is n １ , the refractive index of the material constituting the second layer is n ２, the refractive index of the material that makes up the convex lens is n ３ When this is the case, n １ <n ２ <n ３ In this way, by providing steps such that the refractive index gradually decreases in the direction in which light travels, the refractive index step at each interface can be made smaller, and reflection at the interface can be reduced.

[0035] That is, the convex lens's focusing effect suppresses light divergence and reduces the reflectance of each of the multiple reflective surfaces. Therefore, light loss due to divergence and reflection can be suppressed, and the light extraction efficiency of the display device can be increased. This effect also makes it possible to reduce the voltage applied to the light-emitting element, thereby increasing the reliability of the light-emitting element and reducing its power consumption. Furthermore, the use of this display device can improve the visibility of XR equipment and the like.

[0036] Fig. 1 is a perspective view of a part of a display portion of a display device of one embodiment of the present invention, and also illustrates a cross section. Fig. 2A is a top view of a part of the display portion, and for clarity, some elements shown in Fig. 1 are omitted. Fig. 2B is a cross section corresponding to A1-A2 in Fig. 2A, and illustrates the details of the configuration of a subpixel.

[0037] 1 and 2A show examples of a stripe array, but the present invention is not limited to this, and one embodiment of the present invention can be applied to other arrays, such as an S-stripe array, a delta array, a Bayer array, a zigzag array, a pentile array, and a diamond array.

[0038] The pixel 40 has a plurality of sub-pixels that emit light of different colors. For example, the pixel 40 may have a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light. By configuring the pixel 40 with the sub-pixels R, G, and B, a full-color display can be achieved. For convenience, the sub-pixels may also be referred to as pixels.

[0039] It is preferable to use a light-emitting element as the display element of the pixel 40. By using a self-luminous light-emitting element, a light-weight and thin display device can be obtained without a light source. Therefore, a display device using a light-emitting element is suitable for use in XR equipment worn on the body.

[0040] As will be described in detail later, a light-emitting element that can be used in one embodiment of the present invention preferably has an MML (metal maskless) structure in which a light-emitting layer is separately formed using a lithography process without using a FMM (fine metal mask). A light-emitting element with an MML structure can have a higher aperture ratio than a light-emitting element manufactured using an FMM, and can emit light with high luminance or low power consumption. One embodiment of the present invention has a structure in which a light-emitting element with an MML structure is combined with a convex lens to further increase the light extraction efficiency.

[0041] 1 and 2B, the light-emitting element 110 is provided on a substrate 101. The substrate 101 includes a support, elements of a pixel circuit, and the like. The light-emitting element 110 has an organic layer 112 that acts as a light-emitting layer between a pixel electrode 111 and a common electrode 113. As shown in FIG. 2A, the organic layer 112 can be an organic layer 112R that emits red light in the sub-pixel R, an organic layer 112G that emits green light in the sub-pixel G, and an organic layer 112B that emits blue light in the sub-pixel B.

[0042] The pixel electrode 111 functions as one electrode of the light emitting element 110 and is connected to a pixel circuit provided on the substrate 101. For example, the pixel electrode 111 can function as an anode of the light emitting element 110.

[0043] The common electrode 113 is an electrode shared by a plurality of light emitting elements 110 and functions as the other electrode of the light emitting elements 110 , and can function as, for example, a cathode of the light emitting elements 110 .

[0044] 2C, a common layer 114 may be provided between the common electrode 113 and the organic layer 112. In the light-emitting element 110 shown in FIGS. 1 and 2B, the organic layer 112 includes a layer corresponding to the common layer 114.

[0045] The common layer 114 may have an electron injection layer or a hole injection layer, or may have an electron transport layer and an electron injection layer stacked together, or may have a hole transport layer and a hole injection layer stacked together.

[0046] A resin layer 126 is provided between adjacent light-emitting elements 110. The resin layer 126 insulates the organic layers 112 of adjacent light-emitting elements 110. This reduces leakage current through the organic layers 112 between adjacent light-emitting elements 110, thereby suppressing unnecessary light emission due to crosstalk. Furthermore, providing the resin layer 126 reduces unevenness between adjacent light-emitting elements 110, improving coverage of the common electrode 113 and preventing disconnections.

[0047] A light-transmitting protective layer 121 is provided on the light-emitting element 110, and a convex lens 127 is provided on the protective layer 121. A layer 128 is provided in contact with the convex lens 127. Furthermore, a layer 129 is provided in contact with the layer 128. The protective layer 121, the convex lens 127, the layer 128, and the layer 129 serve as paths through which light emitted by the light-emitting element 110 passes, and therefore preferably have high transmittance to visible light.

[0048] Protective layer 121 is preferably made of a material having a lower refractive index than the material of convex lens 127. Total reflection can be prevented by making the refractive index of protective layer 121 lower than the refractive index of convex lens 127. Layer 128 is preferably made of a material having a lower refractive index than the material of convex lens 127. Layer 129 is preferably made of a material having a lower refractive index than the material of layer 128.

[0049] For example, convex lens 127 is preferably made of resin for ease of manufacturing. Protective layer 121 and layer 128 are preferably inorganic films that can be formed by a vapor phase method. Alternatively, they may be organic films that can be formed by a liquid phase method. Layer 129 is preferably an adhesive (resin) that also serves to flatten the structure on substrate 101 and bond the structure to substrate 102, which is the opposing substrate of substrate 101.

[0050] 3 is an enlarged view of a part of FIG. 2B, illustrating an example of an optical path. Here, light L emitted from the light emitting element 110 and traveling in a divergent direction within the convex lens 127 is １ In the following description, the refractive index of the layer 129 at the same wavelength is n １ , the refractive index of layer 128 is n ２ , the refractive index of the convex lens 127 is n ３ Let's say.

[0051] The light incident on the layer 128 from the convex lens 127 is n ２ <n ３ If so, the incident angle θ １ than the refraction angle θ ２ Therefore, the light is refracted upward at the interface between the convex lens 127 and the layer 128. Also, the light incident on the layer 129 from the layer 128 is n １ <n ２ If so, the incident angle θ ３ than the refraction angle θ ４ becomes larger, the light is further refracted upward at the interface between the layer 128 and the layer 129 .

[0052] That is, n １ <n ２ <n ３ By doing so, the light L traveling in a divergent direction in the convex lens 127 １ This makes it easier to extract light to the outside, thereby improving the light extraction efficiency.

[0053] In addition, n １ <n ２ <n ３ In this case, total reflection can occur at each interface in the direction of light travel. However, since the refractive index difference at each interface is relatively small, the critical angle C １ Here, when considering the interface between the substrate 102 (for example, a glass substrate with n=1.5 (visible light)) in the direction in which light exits to the outside and air (n=1 (visible light)), the difference in refractive index between the two is relatively large, so the critical angle C at which total reflection occurs is ２ is the critical angle C １ will be smaller than

[0054] That is, the critical angle C １ is the critical angle C ２ Therefore, even if light passes through the convex lens 127 and the layer 129 without being totally reflected, total reflection may occur at the interface between the substrate 102 and the air. １ <n ２ <n ３ In this case, total reflection at each interface can be ignored.

[0055] Next, the straight light L without refraction ２ According to Fresnel's equation, the reflectance R at the interface between the convex lens 127 and the layer 128 is １ is R １ = ((n ３ -n ２ ) / (n ３ +n ２ )) ２ and the reflectance R at the interface between the layer 128 and the layer 129 ２ is R ２ = ((n ２ -n １ ) / (n ２ +n １ )) ２ is.

[0056] Here, assuming n １ <n ２ <n ３ Satisfying n １ = 1.40, n ２ = 1.45, n ３ = 1.55, the reflectance R １ =0.111%, reflectance R ２ = 0.031%. ２ ), the reflectance R at the interface between the convex lens 127 and the layer 129 is ３ is R ３ = ((n ３ -n １ ) / (n ３ +n １ )) ２ Therefore, the reflectance R ３ = 0.259%.

[0057] In other words, R １ +R ２ is R３ Since the value is sufficiently smaller than １ <n ２ <n ３ By providing a step in which the refractive index gradually decreases in the direction of light propagation, the refractive index difference at each interface can be reduced, and reflection at the interface can be reduced. Therefore, it can be said that the light extraction efficiency can be improved even for straight-traveling light.

[0058] In this embodiment, an example is shown in which the layer 128 and the layer 129 are provided on the convex lens 127, but if a layer having a refractive index that gradually decreases is further added on the layer 129, the above effect can be enhanced. ｘ and the refractive index of the layer in contact with the substrate 102 is n １ When this is the case, n ｘ From n １ It is sufficient to provide multiple layers between the convex lens 127 and the substrate 102 so that the value gradually decreases from 0 to 1. Note that increasing the number of layers also increases the number of processes, and it is also necessary to select appropriate materials. Therefore, the number of layers provided between the convex lens 127 and the substrate 102 is set to 2 or more and 10 or less, preferably 2 or more and 5 or less.

[0059] Next, the configuration of the light emitting element 110 and its vicinity will be described in detail, taking the case where the configuration shown in FIG. 2C is used.

[0060] Fig. 4A shows a cross section corresponding to A3-A4 shown in Fig. 2A. The display device has a light emitting element 110R that exhibits red, a light emitting element 110G that exhibits green, and a light emitting element 110B that exhibits blue.

[0061] It is preferable to use, for example, an organic light-emitting diode (OLED) or a quantum-dot light-emitting diode (QLED) as the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B. As the light-emitting substance contained in the light-emitting element, not only an organic compound but also an inorganic compound (such as a quantum dot material) can be used.

[0062] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided in common to the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0063] The organic layer 112R of the light-emitting element 110R contains a light-emitting organic compound that emits at least red light. The organic layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B can also be called EL layers, and each contains at least a layer containing a light-emitting substance (light-emitting layer).

[0064] Hereinafter, when describing matters common to light emitting element 110R, light emitting element 110G, and light emitting element 110B, they may be referred to as light emitting element 110. Similarly, when describing matters common to components distinguished by alphabets, such as organic layer 112R, organic layer 112G, and organic layer 112B, they may be described using symbols without the alphabets.

[0065] The organic layer 112 and the common layer 114 can each independently have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 can have an electron injection layer.

[0066] The pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B are provided for each light-emitting element. The common electrode 113 and common layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film transmissive to visible light is used for either the pixel electrode or the common electrode 113, and a conductive film reflective to visible light is used for the other. By making each pixel electrode transmissive and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making each pixel electrode reflective and the common electrode 113 transmissive, a top-emission display device can be obtained. Note that by making both the pixel electrodes and the common electrode 113 transmissive, a dual-emission display device can be obtained.

[0067] A protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above into each light emitting element.

[0068] The edge of the pixel electrode 111 preferably has a tapered shape. When the edge of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the edge of the pixel electrode 111 can also have an inclined portion. By tapering the edge of the pixel electrode 111, the coverage of the organic layer 112 provided over the edge of the pixel electrode 111 can be improved. Furthermore, by tapering the side surface of the pixel electrode 111, foreign matter (for example, also referred to as dust or particles) during the manufacturing process can be easily removed by a process such as cleaning, which is preferable.

[0069] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a substrate surface. For example, it is preferable that the structure has a region in which the angle between the inclined side surface and the substrate surface (also referred to as the taper angle) is less than 90°.

[0070] The organic layer 112 is processed into an island shape using, for example, a resist mask formed by lithography. As a result, the organic layer 112 has a shape in which the angle between the top surface and the side surface is close to 90 degrees at its edge. On the other hand, an organic film formed using FMM (Fine Metal Mask) or the like tends to be gradually thinner toward the edge, and the top surface is formed in a sloped shape over a range of, for example, 1 μm to 10 μm, making it difficult to distinguish between the top surface and the side surface.

[0071] An insulating layer 124, an insulating layer 125 and a resin layer 126 are provided between two adjacent light emitting elements.

[0072] Between two adjacent light-emitting elements, the side surfaces of the organic layers 112 face each other with the resin layer 126 sandwiched therebetween. The resin layer 126 is located between the two adjacent light-emitting elements and is provided so as to fill the ends of each organic layer 112 and the region between the two organic layers 112. The resin layer 126 has a smooth, convex upper surface, and a common layer 114 and a common electrode 113 are provided to cover the upper surface of the resin layer 126.

[0073] The resin layer 126 functions as a planarizing film that fills in the step between two adjacent light-emitting elements. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being separated by the step at the end of the organic layer 112 (also called step disconnection), which would otherwise occur and result in insulation of the common electrode on the organic layer 112.

[0074] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the resin layer 126.

[0075] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0076] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. For example, the resin layer 126 may be a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0077] The resin layer 126 absorbs light emitted from the light-emitting element in an oblique direction, thereby suppressing light leakage (stray light) from the light-emitting element to an adjacent light-emitting element through the resin layer 126. This improves the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, the display device can be made lighter and thinner.

[0078] The insulating layer 125 is provided in contact with the side surface of the organic layer 112. The insulating layer 125 is also provided to cover the upper end portion of the organic layer 112. A portion of the insulating layer 125 is provided in contact with the upper surface of the substrate 101.

[0079] The insulating layer 125 is located between the resin layer 126 and the organic layer 112, and functions as a protective film to prevent the resin layer 126 from contacting the organic layer 112. If the organic layer 112 and the resin layer 126 come into contact with each other, the organic layer 112 may be dissolved by an organic solvent or the like used when forming the resin layer 126. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, it is possible to protect the side surfaces of the organic layer 112.

[0080] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using a metal oxide film such as an aluminum oxide film or a hafnium oxide film formed by an ALD method, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film, as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the EL layer can be formed.

[0081] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0082] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0083] Furthermore, a reflective film (e.g., a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the resin layer 126, so that the light emitted from the light-emitting layer is reflected by the reflective film, thereby improving the light extraction efficiency.

[0084] The insulating layer 124 is a portion of a protective layer (also referred to as a mask layer or a sacrificial layer) that protects the organic layer 112 when the organic layer 112 is etched. The insulating layer 124 can be made of the same material as can be used for the insulating layer 125. In particular, it is preferable to use the same material for the insulating layer 124 and the insulating layer 125 because this allows the use of common processing equipment and the like.

[0085] In particular, metal oxide films such as aluminum oxide films and hafnium oxide films, or inorganic insulating films such as silicon nitride films and silicon oxide films formed by the ALD method have few pinholes and are therefore excellent in the function of protecting the EL layer, and can be suitably used for the insulating layer 125 and the insulating layer 124.

[0086] The protective layer 121 may have, for example, a single-layer structure or a stacked structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide.

[0087] Alternatively, the protective layer 121 may be a laminated film of an inorganic insulating film 121a and an organic insulating film 121b, as shown in FIG. 4C . In this configuration, the organic insulating film can function as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 121 is flat, this is preferable when providing a structure (e.g., a color filter, a touch sensor electrode, or a lens array) above the protective layer 121, as it reduces the influence of unevenness caused by the underlying structure. Alternatively, the protective layer 121 may be formed solely from the organic insulating film 121b. Alternatively, an inorganic insulating film equivalent to the inorganic insulating film 121a may be provided on the organic insulating film 121b.

[0088] A convex lens 127 is provided on the protective layer 121 so as to overlap the light-emitting element 110. Furthermore, layers 128 and 129 are provided on the convex lens 127. The convex lens 127 is also called a microlens, and is provided in pairs with the light-emitting element 110. In other words, one convex lens 127 is provided for one sub-pixel. Note that a plurality of microlenses arranged regularly, similar to a pixel array, can be called a microlens array.

[0089] The convex lens 127 is provided above the light-emitting element 110 (in the direction in which the light is emitted). Since the light emitted by the display device has a certain degree of divergence, light that is not extracted to the outside of the display device is lost. Therefore, it is preferable for the display device to have high front brightness. Because the convex lens 127 has a convex lens shape, it can act in a direction that converges the light. In other words, it can suppress the divergence of the light emitted by the light-emitting element, thereby increasing the light extraction efficiency of the display device.

[0090] The convex lens 127 can be manufactured by the same process using the same material as that of the resin layer 126. The material of the convex lens 127 is preferably one that enhances the performance of the lens and has the above-mentioned n １ <n ２ <n ３ It is preferable to use a material with a relatively high refractive index so as to increase the options for layers 128 and 129 that satisfy the above. Therefore, among materials that can be used for resin layer 126, the refractive index n for visible light is preferably 1.50 or more, and more preferably 1.55 or more.

[0091] Layer 128 can be formed of an inorganic film or an organic film. Fig. 4A shows an example in which layer 128 is an inorganic film formed using a vapor phase method, and the film thickness on convex lens 127 is set to be approximately uniform. Fig. 4B shows an example in which layer 128 is an organic film formed using a liquid phase method, and the convex portions are thin and the concave portions are thick on the surface on which layer 128 is formed. By forming layer 128 in such a shape, layer 128 can also function as a convex lens, and can refract light more upward.

[0092] The vapor phase method may be, for example, the same method as the method for forming the insulating layer 125. The liquid phase method may be, for example, a spin coating method, a dip coating method, a spray coating method, or the like.

[0093] 4A and 4B, layer 128 can refract light incident from convex lens 127 toward the upper surface as long as it satisfies the refractive index conditions described above. If layer 128 is an inorganic film, it can be made of, for example, silicon oxide (n = 1.46), calcium fluoride (n = 1.42), or a mixed layer of silicon oxide and aluminum oxide (n = 1.42). If layer 128 is an organic film, it can be made of the same material as resin layer 126, and among these, it can be made of a material with a refractive index smaller than that of convex lens 127, preferably smaller than n = 1.55, and more preferably smaller than n = 1.50.

[0094] The layer 129 is an adhesive layer provided between the substrate 102 and the layer 129, and is preferably made of an organic material. For example, an optical adhesive having a refractive index close to that of glass that can be used for the substrate 102 can be used. For example, the material has a refractive index smaller than that of the layer 128, and preferably has n=1.5 or less, and more preferably has n=1.45 or less.

[0095] The above is a description of an example of the configuration of the light emitting element and its vicinity.

[0096] The perspective view shown in Fig. 5A is a modified example of Fig. 1, and shows a configuration in which a convex lens 127 can be used as a mask for processing the organic layer 112 into an island shape. Fig. 5B is a top view illustrating a portion of the display section and the wiring connection section. Fig. 6A is a view corresponding to the cross section B1-B2 shown in Fig. 5B. Fig. 6B is a view corresponding to the cross section B5-B6 shown in Fig. 5B.

[0097] Note that in Figure 5B, for clarity, some elements are omitted. Also, explanations of elements that overlap with the configuration of Figure 1 described above will be omitted. Furthermore, in this specification and the like, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like organic layer refers to a state in which the organic layer is physically separated from an adjacent organic layer.

[0098] 1, a resist mask formed in a lithography process is used to process the organic layer 112 into an island shape, but in the structure shown in Fig. 5A, a convex lens 127 can be used instead of the resist mask. Therefore, the number of lithography processes can be reduced, and the manufacturing process can be simplified.

[0099] In this configuration, since the organic layers of the multiple sub-pixels are processed collectively, it is difficult to paint the organic layers separately so that each sub-pixel emits a different light. Therefore, in this configuration, as shown in Figure 6A, it is preferable to use an organic layer 112W that can emit white light and provide a colored layer 130 between the organic layer 112W and the convex lens 127, thereby enabling full-color display. Furthermore, since this configuration involves a process of processing the organic layers of the multiple sub-pixels collectively, it is preferable that the pixel arrangement be a stripe arrangement.

[0100] 1, the common electrode (cathode) of the light-emitting element 110 can be provided over a wide area, so the position of connection with the wiring for applying a potential to the common electrode is not limited, and the connection between the two is relatively easy. On the other hand, in the configuration shown in Figures 5A and 5B, when the organic layer 112W is processed using the convex lens 127 as a mask, the common electrode 113 is also processed into an island shape, so some ingenuity is required for connection with the wiring 111c for applying a potential to the common electrode 113.

[0101] In the configuration shown in Figures 5A and 5B, first, the pixel electrodes 111 in a stripe arrangement and the wiring 111c are formed in the same process. Next, an organic layer capable of emitting white light is formed on the substrate 101 and the pixel electrodes 111. At this time, a metal mask or the like is used to prevent the organic layer from being formed on the wiring 111c. Note that the metal mask used here does not require strict alignment like a fine metal mask. Alternatively, a method such as lift-off may be used to remove the organic layer on the wiring 111c.

[0102] Next, a conductive film that will serve as a common electrode is formed on the substrate 101, the organic layer, and the wiring 111c. At this time, since no organic layer is formed on the wiring 111c, the conductive film can be connected to the wiring 111c. Next, a protective film and a colored layer are formed on the conductive film. Here, the colored layer is formed in a strip shape in the longitudinal direction of the multiple sub-pixels.

[0103] Since the sub-pixels are arranged in a stripe pattern, adjacent sub-pixels in the short direction of the sub-pixels are selectively provided with colored layers of different colors so that the sub-pixels emit different colors of light, as shown in FIG. 5B.

[0104] Next, a planarizing film is provided on the colored layer, and cylindrical convex lenses 127 having curved ends are formed on the planarizing film. Here, the convex lenses 127 are provided so as to cover the pixel electrodes 111 of the plurality of sub-pixels aligned in the longitudinal direction of the sub-pixels and also to cover part of the wiring 111c.

[0105] Using the convex lens 127 thus provided as a mask, the laminate in which the planarizing film, colored layer, protective film, common electrode, and organic layer are stacked in this order from the convex lens 127 side can be collectively processed into an island shape, thereby providing a laminate of the convex lens 127, planarizing layer 122, colored layer 130, protective layer 121, common electrode 113, and organic layer 112W. In other words, when viewed from above, the convex lens 127, the planarizing layer 122, colored layer 130, protective layer 121, and common electrode 113 have the same outer shape.

[0106] The protective layer 121 and the planarizing layer 122 may be provided as needed, and one or both of them may be omitted. The protective layer 121 and the planarizing layer 122 may have the functions of each other.

[0107] In this way, convex lenses 127 are provided on a plurality of sub-pixels aligned in the longitudinal direction of the sub-pixels, and the organic layer can be processed using the convex lenses 127 as a mask. Furthermore, as shown in Fig. 6B, by providing a portion of the convex lenses 127 so as to cover a portion of the wiring 111c, the connection with the wiring 111c can be maintained even if the common electrode 113 is processed into an island shape.

[0108] A layer 128 is provided on the substrate 101 and the convex lens 127, and the substrate 102 is provided on the layer 128 via a layer 129. The effect of providing the layers 128 and 129 is similar to that of the configuration shown in FIG.

[0109] 7A is a view corresponding to the cross section taken along line B3-B4 in FIG. 5B. Subpixel R is provided with a colored layer 130R that transmits red light. Subpixel G is provided with a colored layer 130G that transmits green light. Subpixel B is provided with a colored layer 130B that transmits blue light. Other elements are common to the subpixels R, G, and B.

[0110] 1, insulating layer 125 is provided to protect the side surfaces of organic layer 112 as shown in Figures 4A and 4B, but in the configuration shown in Figure 7A, layer 128 protects the side surfaces of organic layer 112. Therefore, layer 128 is preferably formed from a material that can be used for insulating layer 125 described above and has a refractive index smaller than that of convex lens 127 and larger than that of layer 129.

[0111] 7B , void V can be formed by controlling the coverage through film formation conditions. void V is a region surrounded by layer 128, or a region surrounded by layers 128 and 129. void V is not limited to a vacuum state, and may contain atmospheric components, film formation gas components used when forming layer 128, degassed components emitted from layer 128, or degassed components emitted from layer 129.

[0112] In either case, the refractive index of the void V is smaller than that of the layer 128, so that light that has entered the layer 128 between the subpixels is likely to be totally reflected at the interface with the void V. Therefore, by providing the void V, it is possible to suppress color mixing between adjacent subpixels.

[0113] 7A , even if the gap V is not provided, the same conditions as above apply to total reflection if the refractive index of the layer 128 is lower than the refractive index of the element in contact with the layer 128. Therefore, it can be said that providing the layer 128 makes it less likely for color mixing to occur between adjacent subpixels.

[0114] 7C shows an example in which an organic film is used as layer 128. When a liquid phase method such as spin coating is used, the convex portions are thin and the concave portions are thick on the surface on which layer 128 is formed. By forming layer 128 in this shape, layer 128 can also function as a convex lens, and can refract light more upward.

[0115] The perspective view shown in Fig. 8A is a modification of Fig. 5A and shows an example in which one embodiment of the present invention is applied to pixels with an S-stripe arrangement. Fig. 8A also shows a cross section taken along C1-C2 in Fig. 8B. Fig. 8B is a top view illustrating a portion of a display section and a wiring connection section. Fig. 8C is a cross section taken along C3-C4 in Fig. 8B. The basic configuration of the subpixel is the same as the configuration shown in Fig. 5A.

[0116] In this configuration, a portion of the common electrode 113 is processed into a wiring shape using a mask (wiring mask 131) formed in the same process as the convex lens 127. In this configuration, as shown in Figures 8B and 8C, part of the region of the common electrode 113 processed into a wiring shape is connected to the wiring 111c, so this configuration is easily applicable to arrangements other than a stripe arrangement.

[0117] In order to connect the common electrode 113 to the wiring 111c, the convex lens 127 and the wiring mask 131 need to be connected, but if they are formed to the same thickness, the shape of the convex lens 127 will be distorted. Therefore, it is preferable to form the wiring mask 131 thinner than the convex lens 127 so that the shape of the convex lens 127 is not distorted. In other words, one structure has a region that functions as the convex lens 127 and a region that functions as the wiring mask 131, and it is preferable that the thickness of the region that functions as the wiring mask 131 is thinner than the thickness of the region that functions as the convex lens 127.

[0118] A photolithography method using a photosensitive resin and a multi-tone mask can be used to form the wiring mask 131 thinner than the convex lens 127. Alternatively, the convex lens 127 and the wiring mask 131 may be formed separately by performing a lithography process twice.

[0119] 9A is a block diagram illustrating a display device according to one embodiment of the present invention. The display device 20 includes a pixel array 74, a circuit 75, and a circuit 76. The pixel array 74 includes pixels 40 arranged in columns and rows.

[0120] The pixel 40 can have a plurality of sub-pixels 71. The sub-pixels 71 have the function of emitting light for display. By assigning colors such as R (red), G (green), and B (blue) to the light emitted by the sub-pixels 71, a full-color display can be achieved.

[0121] The subpixel 71 has a light-emitting device that emits unpolarized visible light. As the light-emitting device, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL element has include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials). Alternatively, an LED such as a micro LED can be used as the light-emitting device.

[0122] The circuit 75 and the circuit 76 are driver circuits for driving the sub-pixel 71. The circuit 75 can function as a source driver circuit, and the circuit 76 can function as a gate driver circuit. The circuits 75 and 76 can be, for example, shift register circuits.

[0123] The display device 20 may be divided into a plurality of regions vertically and horizontally, and pixels may be driven for each divided region.

[0124] 9B , the circuit 75 and the circuit 76 can be separately disposed below the pixel array 74. In this case, the display device 20 has a laminated structure of a layer 77 and a layer 78, and a plurality of the circuits 75 and a plurality of the circuits 76 are provided on the layer 77, and the pixel array 74 is provided on the layer 78 so as to overlap the circuits 75 and the circuits 76.

[0125] By dividing the circuit 75 and the circuit 76, the pixel array 74 can be driven for each divided area. For example, the pixel array 74 can be operated at different frame rates in parts. The pixel array 74 can be displayed at different resolutions in parts, and can also be made compatible with foveated rendering.

[0126] Furthermore, by providing the driver circuit below the pixel array 74, the wiring length can be shortened and the wiring capacitance can be reduced. This allows the display device 20 to operate at high speed and with low power consumption. Furthermore, the display device 20 can have a narrow frame.

[0127] 9B are merely examples and may be changed as appropriate. Part of the circuit 75 and part of the circuit 76 may be formed on the same layer as the pixel array 74. The layer 77 may also include circuits such as a memory circuit, an arithmetic circuit, and a communication circuit.

[0128] In this structure, for example, the layer 77 is provided on a single crystal silicon substrate, the circuits 75 and 76 are formed using transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors), and the pixel circuits included in the pixel array 74 provided in the layer 78 are formed using transistors having metal oxide in their channel formation regions (hereinafter referred to as OS transistors). The OS transistor can be formed using a thin film and can be stacked on the Si transistor.

[0129] 9C , a structure may be adopted in which a layer 79 including an OS transistor is provided between the layer 77 and the layer 78. The layer 79 may include an OS transistor that forms part of a pixel circuit included in the pixel array 74. Alternatively, the layer 79 may include an OS transistor that forms part of the circuit 75 and the circuit 76. Alternatively, the layer 77 may include an OS transistor that forms part of a circuit such as a memory circuit, an arithmetic circuit, or a communication circuit.

[0130] The shape of the top surface of the display device 20 is not limited to a rectangle, but may be a circle as shown in Fig. 9D, or a polygon such as an octagon as shown in Fig. 9E.

[0131] Next, pixel layouts other than a stripe arrangement that can be used in one embodiment of the present invention will be described. The arrangement of light-emitting elements (sub-pixels) is not particularly limited, and various methods can be applied.

[0132] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting element.

[0133] An S-stripe arrangement is applied to the pixel 140 shown in Fig. 10A. The pixel 140 shown in Fig. 10A is composed of three sub-pixels, namely, light-emitting elements 110a, 110b, and 110c. For example, the light-emitting element 110a may be a blue light-emitting element, the light-emitting element 110b may be a red light-emitting element, and the light-emitting element 110c may be a green light-emitting element.

[0134] The pixel 140 shown in FIG. 10B includes a light-emitting element 110a having a generally trapezoidal or triangular top surface shape with rounded corners, a light-emitting element 110b having a generally trapezoidal or triangular top surface shape with rounded corners, and a light-emitting element 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the light-emitting element 110a has a larger light-emitting area than the light-emitting element 110b. In this manner, the shape and size of each light-emitting element can be determined independently. For example, the more reliable the light-emitting element, the smaller the size can be. For example, the light-emitting element 110a may be a green light-emitting element, the light-emitting element 110b may be a red light-emitting element, and the light-emitting element 110c may be a blue light-emitting element.

[0135] The pixels 141a and 141b shown in Fig. 10C are arranged in a Pentile arrangement. Fig. 10C shows an example in which a pixel 141a having a light-emitting element 110a and a light-emitting element 110b and a pixel 141b having a light-emitting element 110b and a light-emitting element 110c are arranged alternately. For example, the light-emitting element 110a may be a red light-emitting element, the light-emitting element 110b may be a green light-emitting element, and the light-emitting element 110c may be a blue light-emitting element.

[0136] 10D is a delta arrangement. Pixel 141a has two light-emitting elements (light-emitting elements 110a and 110b) in the top row (first row) and one light-emitting element (light-emitting element 110c) in the bottom row (second row). Pixel 141b has one light-emitting element (light-emitting element 110c) in the top row (first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the bottom row (second row). For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b may be a green light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0137] 10E shows an example in which light-emitting elements of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper edges of two light-emitting elements arranged in a row (e.g., light-emitting elements 110a and 110b, or light-emitting elements 110b and 110c) are offset. For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b may be a green light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0138] Although the above example shows the provision of sub-pixels corresponding to the three primary colors of light (R, G, B), a sub-pixel having a white light-emitting light-emitting element 110 may also be provided. By adding a white light-emitting sub-pixel, power consumption can be reduced and brightness can be increased.

[0139] For example, when displaying white, driving one W sub-pixel can reduce power consumption compared to driving three R, G, and B sub-pixels to emit white light. In particular, when the light source is white light and colored layers (color filters) are used for the R, G, and B sub-pixels, the attenuation of the light intensity is large. Therefore, the effect of the W sub-pixel, which does not use a colored layer, is significant.

[0140] Furthermore, since white light can be said to contain red, green, and blue light components, the color created by red, green, and blue light can also be created by white light and one or two of red, green, and blue light. Therefore, depending on the color to be created, the number of sub-pixels to be driven can be reduced, thereby reducing power consumption.

[0141] Furthermore, because white light is a substitute for red light, green light, and blue light, illuminating the W subpixel is equivalent to illuminating all of the R, G, and B subpixels. Therefore, illuminating the four R, G, B, and W subpixels can increase the display brightness.

[0142] The four sub-pixels R, G, B, and W can be arranged as a stripe pixel 145, as shown in FIG. 10F, for example.

[0143] Alternatively, as shown in Fig. 10G, the subpixels may be configured in three rows and two columns. The pixel shown in Fig. 10G has a light-emitting element 110b in the top row (first row), a light-emitting element 110c in the center row (second row), light-emitting elements 110a across the first and second rows, and one light-emitting element 110d in the bottom row (third row). In the pixel shown in Fig. 10G, the layout of R, G, and B is a so-called S-stripe arrangement, which can improve display quality.

[0144] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. Therefore, the top surface shape of the light-emitting element may be a polygon with rounded corners, an ellipse, a circle, or the like.

[0145] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resin mask (convex lens 127). The resin mask formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resin material, the mask may not be cured sufficiently. A mask that is not cured sufficiently may have a shape different from the desired shape during processing. As a result, the top surface shape of the EL layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a mask with a square top surface shape is formed, a mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0146] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0147] This concludes the description of the pixel layout.

[0148] 11A is a diagram showing an example of a glasses-type device having a display device and an optical device according to one embodiment of the present invention. Here, a combination of a display device 20 and an optical device 21 is shown by a dashed line as a display unit 60. FIG. 11B is a diagram illustrating elements of the display unit 60.

[0149] The user can view the image displayed on the display device 20 by bringing their eyes close to the optical device 21 provided on the display surface side of the display device 20. The user can view the image with the viewing angle widened by the optical device 21, which gives the user a sense of immersion and realism.

[0150] A linear polarizer 62 and a retardation film 63 can be attached to the display surface of the display device 20. The optical device 21 can have a configuration including, for example, a half mirror 64, a lens 65, a retardation film 66, a reflective polarizer 67, and a lens 68.

[0151] The optical device 21 converts the light emitted by the display device 20 into linearly polarized light or circularly polarized light and utilizes it to selectively reflect or transmit light at elements arranged on the optical path. This allows the optical path length to be secured within a limited space, and the focal length of the optical device to be shortened. This type of optical system is called a catadioptric system. It is also sometimes called a pancake lens due to its thin shape.

[0152] The two display units 60 are incorporated into the housing 30 so that the surfaces of the lenses 68 are exposed on the inside. One display unit 60 is for the right eye, and the other display unit 60 is for the left eye, and by displaying images corresponding to the parallax on each display unit 60, the user can feel the three-dimensionality of the image.

[0153] Furthermore, the housing 30 or the holder 35 may be provided with an input terminal and an output terminal. The input terminal can be connected to a cable that supplies a video signal from a video output device or the like, power for charging the battery, etc. The output terminal, for example, functions as an audio output terminal, and can be connected to earphones, headphones, etc. Note that if the device is configured to be able to output audio data via wireless communication, or if audio is output from an external video output device, the audio output terminal need not be provided.

[0154] Furthermore, a wireless communication module and a storage module may be provided inside the housing 30 or the holder 35. The wireless communication module performs wireless communication, and the content to be viewed can be downloaded and stored in the storage module. This allows the user to view the downloaded content offline.

[0155] A line-of-sight detection sensor may also be provided inside the housing 30. For example, operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, decision, and back, as well as operation buttons such as video playback, stop, pause, fast forward, and fast rewind, can be displayed, and each operation can be performed by visually recognizing the operation button.

[0156] The operation of the above-mentioned operation buttons can also be performed using a touch sensor 16 provided on a front panel 15, which is part of the housing 30, as shown in Fig. 12A. When viewing VR images, it is difficult for the user to directly see the surrounding environment, and therefore the user cannot let go of an operating device such as a remote controller, which is inconvenient. If the touch sensor 16 is provided on the housing 30, operability can be improved and the degree of freedom of both hands can be increased.

[0157] A pointing device using a capacitance sensor can be typically used as the touch sensor 16. As shown in Fig. 12B , the touch sensor 16 can be attached to the outside of the panel 15 provided on the front surface of the housing 30. By attaching the touch sensor 16 to the outside of the housing 30, sensing sensitivity can be increased. Note that a protective film or the like may be provided on the front surface of the touch sensor 16.

[0158] Alternatively, as shown in Fig. 12C , the touch sensor 16 may be attached to the inside of the panel 15. In such a configuration, the touch sensor 16 is protected by the panel 15, thereby improving reliability. Note that, as shown in Fig. 12D , the touch sensor 16 may be provided on the surface opposite to the display surface of the display device 20. With such a configuration, it is possible to share the power supply path and the like with the display device 20, thereby reducing component costs.

[0159] The touch sensor 16 may be provided on a side surface of the housing 30 as shown in Fig. 13A . While Fig. 13A shows an example in which the touch sensor 16 is provided on both side surfaces of the housing 30, the touch sensor 16 may be provided on only one side. Alternatively, the touch sensor 16 may be provided on the upper or lower surface of the housing 30. Furthermore, by combining the configurations of Fig. 12A and Fig. 13A , the touch sensor 16 may be provided on both the front surface of the housing 30 (the front or rear side of the panel 15) and the side surface of the housing 30. Alternatively, one touch sensor 16 may be provided from the front surface to the side surface of the housing 30.

[0160] 13B, the display unit 60 may be a combination of one display device 22 and two optical devices. By displaying two images corresponding to the left and right eyes on the display device 22, the display device can be reduced to one, thereby reducing component costs. Furthermore, the display unit 60 can be easily incorporated into the housing 30.

[0161] By using the display device of one embodiment of the present invention for a glasses-type device, the electronic device can have low power consumption and high reliability.

[0162] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0163] Embodiment 2 In this embodiment, another structural example of a display panel that can be used as a display device according to one embodiment of the present invention will be described.

[0164] The display panel of this embodiment is a high-definition display panel, and is particularly suitable for use as the display section of VR devices such as head-mounted displays, and wearable devices that can be worn on the head, such as eyeglass-type AR devices.

[0165] 14A shows a perspective view of a display module 280. The display module 280 has a display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and may be any of display panels 200B to 200G described below.

[0166] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is an area for displaying an image.

[0167] 14B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0168] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 14B. The pixel 284a has a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0169] The pixel circuit portion 283 has a plurality of pixel circuits 283a arranged periodically. Each pixel circuit 283a is a circuit that controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display panel.

[0170] The circuit portion 282 includes a circuit for driving each pixel circuit 283a in the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like. Furthermore, a transistor provided in the circuit portion 282 may constitute a part of the pixel circuit 283a. That is, the pixel circuit 283a may be composed of a transistor included in the pixel circuit portion 283 and a transistor included in the circuit portion 282.

[0171] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0172] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the pixel density of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a pixel density of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0173] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0174] [Display Panel 200A] The display panel 200A shown in FIG. 15 includes a substrate 301, light-emitting elements 110R, 110G, and 110B, a capacitor 240, and a transistor 310.

[0175] Substrate 301 corresponds to substrate 291 in FIGS. 14A and 14B.

[0176] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0177] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0178] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0179] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0180] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0181] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided over the insulating layer 255a, and an insulating layer 255c is provided over the insulating layer 255b.

[0182] An inorganic insulating film can be preferably used for each of the insulating layers 255a, 255b, and 255c. For example, it is preferable to use a silicon oxide film for the insulating layer 255a and the insulating layer 255c, and a silicon nitride film for the insulating layer 255b. This allows the insulating layer 255b to function as an etching protection film. In this embodiment, an example is shown in which part of the insulating layer 255c is etched to form a recess, but the insulating layer 255c does not necessarily have to have a recess.

[0183] The light emitting elements 110R, 110G, and 110B are provided over the insulating layer 255c. Embodiment 2 can be referred to for the structures of the light emitting elements 110R, 110G, and 110B.

[0184] The display panel 200A has a separate light-emitting device for each emitted color, so there is little change in chromaticity between low-luminance and high-luminance emission. Furthermore, because the organic layers 112R, 112G, and 112B are spaced apart from one another, crosstalk between adjacent subpixels can be suppressed even in a high-resolution display panel. This makes it possible to realize a high-resolution display panel with high display quality.

[0185] An insulating layer 125 and a resin layer 126 are provided in the region between adjacent light emitting elements.

[0186] The pixel electrodes 111R, 111G, and 111B of the light-emitting element are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0187] A protective layer 121 is provided on the light emitting elements 110R, 110G, and 110B. The substrate 102 is attached to the protective layer 121 with a layer 129 that functions as an adhesive layer.

[0188] There is no insulating layer covering the upper end of each pixel electrode 111 between two adjacent pixel electrodes 111. This allows the distance between adjacent light-emitting elements to be extremely narrow, resulting in a high-definition or high-resolution display panel.

[0189] 16 has a stacked structure of a transistor 310A and a transistor 310B, each of which has a channel formed in a semiconductor substrate. Note that in the following description of the display panel, descriptions of parts that are the same as those of the display panel described above may be omitted.

[0190] The display panel 200B has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device and a substrate 301A provided with a transistor 310A are bonded together.

[0191] Here, an insulating layer 345 is provided on the lower surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 121.

[0192] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 that covers the side surface of the plug 343 and functions as a protective layer.

[0193] Furthermore, in the substrate 301B, a conductive layer 342 is provided below the insulating layer 345. The conductive layer 342 is embedded in the insulating layer 335, and the lower surfaces of the conductive layer 342 and the insulating layer 335 are flattened. The conductive layer 342 is electrically connected to a plug 343.

[0194] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is embedded in the insulating layer 336, and the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0195] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows for the application of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0196] [Display Panel 200C] A display panel 200C shown in FIG. 17 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0197] 17 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0198] [Display Panel 200D] The display panel 200D shown in FIG. 18 differs from the display panel 200A mainly in the configuration of the transistors.

[0199] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0200] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0201] Substrate 331 corresponds to substrate 291 in FIGS. 14A and 14B.

[0202] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0203] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0204] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film exhibiting semiconductor characteristics. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0205] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0206] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 in contact with the top surface of the semiconductor layer 321 and a conductive layer 324 are buried in the opening. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0207] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0208] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0209] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a part of the upper surface of the conductive layer 325, and a conductive layer 274b in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material through which hydrogen and oxygen do not easily diffuse as the conductive layer 274a.

[0210] Note that the structure of the transistor included in the display panel of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0211] The transistor 320 has a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the transistor may be driven by supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0212] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0213] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0214] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0215] Alternatively, the semiconductor layer of the transistor may contain silicon, such as amorphous silicon or crystalline silicon (such as low-temperature polysilicon or single-crystal silicon).

[0216] Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably contains two or three elements selected from indium, element M, and zinc. The element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0217] When a metal oxide is used for the semiconductor layer, the metal oxide is preferably formed by a sputtering method or an ALD method. When the metal oxide is formed by a sputtering method, productivity and film density can be increased. When the metal oxide is formed by an ALD method, film coverage can be increased.

[0218] In particular, as the metal oxide used in the semiconductor layer, it is preferable to use an oxide containing indium, gallium, and zinc (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, aluminum, and zinc (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO).

[0219] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:4 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2: Examples of such compositions include a composition of In:M:Zn=4:2:4.1 or a composition of In:M:Zn=5:1:3 or a composition of In:M:Zn=5:1:6 or a composition of In:M:Zn=5:1:7 or a composition of In:M:Zn=5:1:8 or a composition of In:M:Zn=6:1:6 or a composition of In:M:Zn=5:2:5 or a composition of In:M:Zn=5:2:5. Note that a composition of a similar ratio includes a range of ±30% of the desired atomic ratio.

[0220] Furthermore, it is preferable to use gallium or tin as the element M. Note that the element M may be a combination of two or more of the above elements. It is also preferable to use In:M:Zn=40:1:10 or a metal oxide thereof in the semiconductor layer. Specifically, it is preferable to use In:Sn:Zn=40:1:10 or a metal oxide thereof in the semiconductor layer.

[0221] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0222] The semiconductor layer may also have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having an In:M:Zn=1:3:4 (atomic ratio) or a composition similar thereto and a second metal oxide layer having an In:M:Zn=1:1:1 (atomic ratio) or a composition similar thereto provided on the first metal oxide layer is preferably used. Gallium or aluminum is particularly preferably used as the element M.

[0223] Alternatively, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0224] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0225] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state, and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display panel.

[0226] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0227] Furthermore, when the transistor operates in the saturation region, the change in source-drain current of an OS transistor is smaller than that of a Si transistor in response to a change in gate-source voltage. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger number of gray levels to be displayed in the pixel circuit.

[0228] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0229] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "reduced power consumption," "increased light emission luminance," "multiple gray levels," "suppressed variations in light-emitting devices," and the like.

[0230] [Display Panel 200E] A display panel 200E shown in FIG. 19 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide is formed.

[0231] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0232] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0233] With this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, which makes it possible to make the display panel smaller than when driving circuits are provided around the periphery of the display area.

[0234] [Display Panel 200F] The display panel 200F shown in Fig. 20 has a configuration in which the transistor 320 of the display panel 200E shown in Fig. 19 is replaced with a transistor 320A (vertical transistor). Note that the configuration in which the transistor 320 is replaced with the transistor 320A can also be applied to the display panel 200D shown in Fig. 18.

[0235] 21A shows a cross-sectional view of the transistor 320A in the XZ plane, and FIG. 21B shows a cross-sectional view of the transistor 320A in the XY plane including the wiring 440.

[0236] The transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. The oxide semiconductor 470 functions as a semiconductor layer, the insulator 430 functions as a gate insulator, and the conductor 420 functions as a gate electrode. The wiring 450 has a region that functions as one of a source electrode and a drain electrode of the transistor 320A. The wiring 440 has a region that functions as the other of the source electrode and the drain electrode of the transistor 320A.

[0237] An opening 490 is provided through the wiring 440 and the insulator 480, reaching the wiring 450. The opening 490 has a columnar shape with a substantially circular upper surface. This structure allows for miniaturization or high integration of memory cells. Note that the side surface of the opening 490 is preferably perpendicular to the upper surface of the wiring 450.

[0238] At least a part of the oxide semiconductor 470 is disposed in the opening 490. Note that the oxide semiconductor 470 has a region in contact with the top surface of the wiring 450, a region in contact with the side surface of the wiring 440, and a region in contact with the side surface of the insulator 480 in the opening 490.

[0239] The insulator 430 is disposed so that at least a portion thereof covers the opening 490. The conductor 420 is disposed so that at least a portion thereof is located in the opening 490. Note that the conductor 420 is preferably provided so as to fill the opening 490, and the top surface thereof is preferably approximately circular in order to increase the degree of integration.

[0240] As illustrated in FIG. 21A, the oxide semiconductor 470 includes a region 470i and regions 470na and 470nb that sandwich the region 470i.

[0241] The region 470na is a region of the oxide semiconductor 470 that is in contact with the wiring 450. At least a part of the region 470na functions as one of the source region and the drain region of the transistor 320A. The region 470nb is a region of the oxide semiconductor 470 that is in contact with the wiring 440. At least a part of the region 470nb functions as the other of the source region and the drain region of the transistor 320A. As shown in FIG. 21B , the wiring 440 is in contact with the entire periphery of the oxide semiconductor 470. Therefore, the other of the source region and the drain region of the transistor 320A can be formed along the entire periphery of a portion of the oxide semiconductor 470 that is formed in the same layer as the wiring 440.

[0242] The region 470i is a region sandwiched between the regions 470na and 470nb in the oxide semiconductor 470. At least part of the region 470i functions as a channel formation region of the transistor 320A. That is, the channel formation region of the transistor 320A is formed in a part of the oxide semiconductor 470 located between the wiring 450 and the wiring 440. It can also be said that the channel formation region of the transistor 320A is located in a region of the oxide semiconductor 470 that is in contact with the insulator 480 or in a region in the vicinity of the insulator 480.

[0243] The channel length of the transistor 320A is the distance between the source region and the drain region. In other words, the channel length of the transistor 320A can be determined by the thickness of the insulator 480 on the wiring 450. In FIG. 21A , the channel length L of the transistor 320A is indicated by a dashed double-headed arrow. The channel length L is the distance between the end of the region where the oxide semiconductor 470 and the wiring 450 contact each other and the end of the region where the oxide semiconductor 470 and the wiring 440 contact each other in a cross-sectional view. In other words, the channel length L corresponds to the length of the side surface of the insulator 480 on the opening 490 side in a cross-sectional view.

[0244] In a planar transistor, the channel length is limited by the exposure limit of photolithography, making further miniaturization difficult. However, in one embodiment of the present invention, the channel length can be set by the film thickness of the insulator 480. Therefore, the channel length of the transistor 320A can be made into an extremely fine structure that is equal to or less than the exposure limit of photolithography (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less, and 1 nm or more, or 5 nm or more). This allows the on-state current of the transistor 320A to be increased.

[0245] Furthermore, as described above, the channel formation region, the source region, and the drain region can be formed in the opening 490. This allows the area occupied by the transistor 320A to be reduced compared to a conventional transistor in which the channel formation region, the source region, and the drain region are provided separately on the XY plane, thereby increasing the pixel density.

[0246] A transistor having a channel formation region along the side surface of the insulator 480 in the opening 490 is also called a vertical transistor.

[0247] 21B , the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged concentrically in the XY plane including the channel formation region of the oxide semiconductor 470. Therefore, the side surface of the conductor 420 located at the center faces the side surface of the oxide semiconductor 470 with the insulator 430 interposed therebetween. That is, the entire periphery of the oxide semiconductor 470 forms the channel formation region in a top view. In this case, for example, the channel width of the transistor 320A is determined by the perimeter of the oxide semiconductor 470. That is, the channel width of the transistor 320A can be determined by the maximum width of the opening 490 (the maximum diameter when the opening 490 is circular in a top view). In FIGS. 21A and 21B , the maximum width D of the opening 490 is indicated by a double-headed, dashed arrow. In FIG. 21B , the channel width W of the transistor 320A is indicated by a double-headed, dashed arrow. By increasing the maximum width D of the opening 490, the channel width per unit area can be increased, and the on-current can be increased.

[0248] When the opening 490 is formed by photolithography, the maximum width D of the opening 490 is limited by the exposure limit of photolithography. The maximum width D of the opening 490 is set depending on the film thicknesses of the oxide semiconductor 470, the insulator 430, and the conductor 420 provided in the opening 490. The maximum width D of the opening 490 is, for example, 5 nm or more, 10 nm or more, or 20 nm or more, and preferably 100 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. When the opening 490 has a circular shape in top view, the maximum width D of the opening 490 corresponds to the diameter of the opening 490, and the channel width W can be calculated as "D × π".

[0249] In the memory device of one embodiment of the present invention, the channel length L of the transistor 320A is preferably at least shorter than the channel width W of the transistor 320A. The channel length L of the transistor 320A of one embodiment of the present invention is 0.1 to 0.99 times, preferably 0.5 to 0.8 times, the channel width W of the transistor 320A. With such a structure, a transistor with favorable electrical characteristics and high reliability can be realized.

[0250] Furthermore, by forming the opening 490 to have a substantially circular shape in top view, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged concentrically. This makes the distance between the conductor 420 and the oxide semiconductor 470 substantially uniform, allowing a gate electric field to be applied to the oxide semiconductor 470 substantially uniformly.

[0251] The channel formation region of a transistor using an oxide semiconductor for a semiconductor layer preferably has fewer oxygen vacancies or a lower concentration of impurities such as hydrogen, nitrogen, or metal elements than the source and drain regions. For example, the aluminum concentration in the channel formation region of the oxide semiconductor is preferably 1×10 ２２ atoms / cm ３ Preferably, 1×10 ２１ atoms / cm ３ More preferably, 1×10 ２０ atoms / cm ３ Less than 5 x 10 is more preferable. １９ atoms / cm ３ More preferably, 1×10 １９ atoms / cm ３ Less than 5 x 10 is more preferable. １８ atoms / cm ３ More preferably, 1×10 １８ atoms / cm ３ The following is even more preferred:

[0252] In addition, hydrogen atoms near the oxygen vacancies are converted into defects where hydrogen atoms have entered the oxygen vacancies (hereinafter referred to as V Ｏ H) and generate electrons that become carriers. Therefore, in the channel formation region, V Ｏ It is preferable that H is also reduced. In this way, the channel formation region of the transistor is a high-resistance region with a low carrier concentration. Therefore, the channel formation region of the transistor can be said to be i-type (intrinsic) or substantially i-type.

[0253] In addition, the source and drain regions of a transistor using an oxide semiconductor for a semiconductor layer have more oxygen vacancies than the channel formation region. ＯThe source and drain regions of a transistor are n-type regions with a high carrier concentration and low resistance compared to the channel formation region, due to a high concentration of H or a high concentration of impurities such as hydrogen, nitrogen, and metal elements.

[0254] 21A and other drawings, the opening 490 is provided so that the side surface of the opening 490 is perpendicular to the upper surface of the wiring 450, but the present invention is not limited to this. For example, the side surface of the opening 490 may be tapered.

[0255] [Display Panel 200G] The display panel 200G shown in FIG. 22 is a modified example of the display panel 200E shown in FIG. 19, and is an example in which an imaging element is provided on the surface opposite to the light emitting element 110.

[0256] The photodiode 540, which is an imaging element, is a pn junction type photodiode formed on a silicon substrate, and has a p-type region 543 and an n-type region 544. The photodiode 540 is a buried type photodiode, and the thin p-type region 543 provided on the surface side (current extraction side) of the n-type region 544 can suppress dark current and reduce noise.

[0257] The insulating layer 541 functions as a blocking layer. The insulating layer 542 functions as an element isolation layer. The insulating layer 545 functions to suppress the outflow of carriers. The insulating layer 546 functions as an interlayer film.

[0258] Grooves that separate pixels are provided in the silicon substrate, and an insulating layer 545 is provided on the surface of the silicon substrate and in the grooves. The insulating layer 545 can prevent carriers generated in the photodiode 540 from flowing into adjacent pixels. The insulating layer 545 also has the function of preventing stray light from entering. Therefore, the insulating layer 545 can prevent color mixing. An anti-reflection film may be provided between the upper surface of the silicon substrate and the insulating layer 545.

[0259] The element isolation layer can be formed using a local oxidation of silicon (LOCOS) method, a shallow trench isolation (STI) method, or the like. For example, an inorganic insulating film such as silicon oxide or silicon nitride, or an organic insulating film such as polyimide resin or acrylic resin can be used as the insulating layer 545. The insulating layer 545 may have a multi-layer structure.

[0260] The transistor 103 has a channel formation region in the silicon substrate on which the photodiode 540 is provided. An n-type region 544 (corresponding to a cathode) of the photodiode 540 serves as one of the source and the drain of the transistor 103, and the other of the source and the drain of the transistor 103 is electrically connected to the gate of the transistor 310 through the conductive layers 532 a and 532 b.

[0261] The transistor 103 and the transistor 310 are elements of a pixel circuit. The transistor 103 functions as a transfer transistor that transfers charges generated in the photodiode 540 to the gate of the transistor 310, and the transistor 310 functions as an amplifying transistor. The p-type region 543 (anode) is electrically connected to the wiring 260, which functions as a power supply line, via the conductive layers 531 a and 531 b.

[0262] Note that a driver circuit for driving a pixel having a light-emitting element, a driver circuit for driving a pixel having an imaging element, a memory circuit, or the like can be provided in the layer in which the transistor 310 is provided.

[0263] The conductive layers 531a, 531b, 532a, and 532b are also part of the bonding layer (layer 208), and the transistor 103 and the transistor 310 are connected in a bonding process. The bonding layer (layer 208) will be described in detail later.

[0264] On the light receiving surface side of the photodiode 540, a light blocking layer 551, an optical conversion layer 550, and a microlens array 555 are provided.

[0265] The light-shielding layer 551 can prevent light from flowing into adjacent pixels. A metal layer such as aluminum or tungsten can be used for the light-shielding layer 551. The metal layer may be stacked with a dielectric film that functions as an anti-reflection film.

[0266] When the photodiode 540 is sensitive to visible light, a color filter can be used for the optical conversion layer 550. A color image can be obtained by assigning color filters of colors such as R (red), G (green), B (blue), Y (yellow), C (cyan), and M (magenta) to each pixel.

[0267] For example, as shown in the perspective view (including cross section) of FIG. 23A, a color filter 550R (red), a color filter 550G (green), and a color filter 550B (blue) can be assigned to different pixels.

[0268] Furthermore, when a wavelength cut filter is used in the optical conversion layer 550 in a suitable combination of the photodiode 540 and the optical conversion layer 550, an imaging device can be obtained that can obtain images in various wavelength regions.

[0269] For example, if an infrared filter that blocks light with wavelengths shorter than visible light is used in the optical conversion layer 550, an infrared imaging device can be formed. Also, if a filter that blocks light with wavelengths shorter than near-infrared light is used in the optical conversion layer 550, a far-infrared imaging device can be formed. Also, if an ultraviolet filter that blocks light with wavelengths longer than visible light is used in the optical conversion layer 550, an ultraviolet imaging device can be formed.

[0270] It is also possible to arrange multiple different optical conversion layers within a single imaging device. For example, as shown in FIG. 23B , a color filter 550R (red), a color filter 550G (green), a color filter 550B (blue), and an infrared filter 550IR can be assigned to different pixels. With this configuration, visible light images and infrared light images can be acquired simultaneously.

[0271] 23C, color filter 550R (red), color filter 550G (green), color filter 550B (blue), and ultraviolet filter 550UV can be assigned to different pixels, respectively. In this configuration, visible light images and ultraviolet light images can be acquired simultaneously.

[0272] Furthermore, if a scintillator is used for the optical conversion layer 550, an imaging device can be used for X-ray imaging devices and the like to obtain images that visualize the intensity of radiation. When radiation such as X-rays that has passed through a subject is incident on the scintillator, it is converted into light (fluorescence) such as visible light or ultraviolet light by the photoluminescence phenomenon. Then, image data is obtained by detecting this light with the photodiode 540. An imaging device having this configuration may also be used for a radiation detector or the like.

[0273] A scintillator contains a substance that absorbs the energy of radiation such as X-rays or gamma rays and emits visible or ultraviolet light when irradiated with the radiation. For example, Gd ２ O ２ S: Tb, Gd ２ O ２ S: Pr, Gd ２ O ２ S: Eu, BaFCl: Eu, NaI, CsI, CaF ２ , BaF ２ , CeF ３ , LiF, LiI, ZnO, etc. dispersed in resin or ceramics can be used.

[0274] Imaging using infrared or ultraviolet light can provide the imaging device with inspection functions, security functions, sensor functions, etc. For example, imaging using infrared light can be used for non-destructive testing of produce, sorting of agricultural products (such as a sugar content meter function), vein authentication, medical testing, etc. Furthermore, imaging using ultraviolet light can detect ultraviolet light emitted from a light source or flame, allowing for management of light sources, heat sources, production equipment, etc.

[0275] A microlens array 555 is provided on the optical conversion layer 550. Light passing through each lens of the microlens array 555 passes through the optical conversion layer 550 directly below and is irradiated onto the photodiode 540. By providing the microlens array 555, concentrated light can be incident on the photodiode 540, thereby enabling efficient photoelectric conversion. The microlens array 555 is preferably formed from a resin or glass that is highly translucent to light of the target wavelength.

[0276] Next, a step of bonding the layer provided with the transistor 103 and the layer provided with the transistor 310 using a bonding layer (layer 208) will be described.

[0277] An insulating layer 529a and conductive layers 531a and 531b are provided on the side where the transistor 103 is provided. The conductive layers 531a and 531b have regions buried in the insulating layer 529a. The surfaces of the insulating layer 529a and the conductive layers 531a and 531b are planarized so that they are at the same height.

[0278] An insulating layer 529b and conductive layers 532a and 532b are provided on the side where the transistor 310 is provided. The conductive layers 532a and 532b have regions buried in the insulating layer 529b. The surfaces of the insulating layer 529b and the conductive layers 532a and 532b are planarized so that they are at the same height.

[0279] Here, the conductive layers 531a and 531b and the conductive layers 532a and 532b preferably contain the same metal element as a main component, and the insulating layers 529a and 529b preferably contain the same component as a main component.

[0280] For example, the conductive layers 531a, 531b and the conductive layers 532a, 532b can be made of Cu, Al, Sn, Zn, W, Ag, Pt, or Au. Cu, Al, W, or Au is preferred because of ease of bonding. The insulating layers 529a, 529b can be made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, titanium nitride, or the like.

[0281] That is, the conductive layers 531a and 531b and the conductive layers 532a and 532b are preferably formed using the same metal material as described above. The insulating layers 529a and 529b are preferably formed using the same insulating material as described above. This structure allows the layer including the transistor 103 and the layer including the transistor 310 to be bonded to each other.

[0282] The conductive layers 531a, 531b and the conductive layers 532a, 532b may have a multilayer structure with multiple layers, in which case the surface layers (joint surfaces) may be made of the same metal material. The insulating layers 529a and 529b may also have a multilayer structure with multiple layers, in which case the surface layers (joint surfaces) may be made of the same insulating material.

[0283] By this bonding, the conductive layers 531a and 532a can be connected to each other, and the conductive layers 531b and 532b can be connected to each other. In addition, the insulating layers 529a and 529b can be connected to each other with sufficient mechanical strength.

[0284] To bond metal layers together, surface activated bonding can be used, in which oxide films and impurity adsorption layers on the surfaces are removed by sputtering or other methods, and the cleaned and activated surfaces are then brought into contact and bonded. Alternatively, diffusion bonding can be used, in which surfaces are bonded using a combination of temperature and pressure. Both methods create bonds at the atomic level, resulting in excellent bonding not only electrically but also mechanically.

[0285] Furthermore, to bond insulating layers together, a hydrophilic bonding method can be used, in which high flatness is achieved by polishing or other methods, then surfaces that have been hydrophilically treated with oxygen plasma or other methods are brought into contact with each other to form a temporary bond, and the final bond is then achieved by dehydrating them through heat treatment.Hydrophilic bonding also creates bonds at the atomic level, so it is possible to obtain mechanically excellent bonds.

[0286] When the insulating layer 529a and the insulating layer 529b are bonded to each other, an insulating layer and a metal layer are mixed on the bonding surfaces, and therefore, for example, a surface activated bonding method and a hydrophilic bonding method may be combined.

[0287] For example, a method can be used in which the surface is polished, cleaned, the surface of the metal layer is subjected to an anti-oxidation treatment, and then a hydrophilic treatment is performed before bonding. Alternatively, the surface of the metal layer may be made of a resistant metal such as Au and then subjected to a hydrophilic treatment. Note that bonding methods other than those described above may also be used.

[0288] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes and examples described in this specification.

[0289] 15: Panel, 16: Touch sensor, 20: Display device, 21: Optical device, 22: Display device, 30: Housing, 35: Holder, 40: Pixel, 60: Display unit, 62: Linear polarizer, 63: Retardation plate, 64: Half mirror, 65: Lens, 66: Retardation plate, 67: Reflective polarizer, 68: Lens, 71: Subpixel, 74: Pixel array, 75: Circuit, 76: Circuit, 77: Layer, 78: Layer, 79: Layer, 101: Substrate, 102: Substrate, 103: Transistor, 110: Light-emitting element, 110a: Light-emitting element, 110B: Light-emitting element, 110b: Light-emitting element, 110c: Light-emitting element, 110d: Light-emitting element , 110G: light-emitting element, 110R: light-emitting element, 111: pixel electrode, 111B: pixel electrode, 111c: wiring, 111G: pixel electrode, 111R: pixel electrode, 112: organic layer, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 113: common electrode, 114: common layer, 121: protective layer, 122: planarizing layer, 124: insulating layer, 125: insulating layer, 126: resin layer, 127: convex lens, 128: layer, 129: layer, 130: colored layer, 130B: colored layer, 130G: colored layer, 130R: colored layer, 131: wiring mask, 140: pixel, 141a: pixel, 141b Pixel, 145: pixel, 200A: display panel, 200B: display panel, 200C: display panel, 200D: display panel, 200E: display panel, 200F: display panel, 208: layer, 240: capacitor, 241: conductive layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 260: wiring, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274: plug, 274a: conductive layer, 274b: conductive layer, 280: display module, 281: display section, 282: circuit section, 283: pixel circuit section, 283a: pixel circuit, 284: pixel section, 284a: pixel, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 301A: substrate, 301B: substrate, 310: transistor, 310A: transistor, 310B: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320: transistor, 320A: transistor, 321: semiconductor layer,323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 420: conductor, 430: insulator, 440: wiring, 450: wiring, 470: oxide semiconductor, 470i: region, 470na: region, 470nb: region, 480: insulator , 490: opening, 529a: insulating layer, 529b: insulating layer, 531a: conductive layer, 531b: conductive layer, 532a: conductive layer, 532b: conductive layer, 540: photodiode, 541: insulating layer, 542: insulating layer, 543: p-type region, 544: n-type region, 545: insulating layer, 546: insulating layer, 550: optical conversion layer, 550B: color filter, 550G: color filter, 550IR: infrared filter, 550R: color filter, 550UV: ultraviolet filter, 551: light-shielding layer, 555: microlens array,

Claims

A convex lens provided on the light-emitting element; a second layer provided on and in contact with the convex lens; a first layer disposed on and in contact with the second layer; having The refractive index of the first layer is n １ , the refractive index of the second layer is n ２ , the refractive index of the convex lens is n ３ When n １ <n ２ <n ３ and The display device, wherein the convex lens is provided in a pair with the light-emitting element. 　 In claim 1, The light-emitting element is a display device that emits red, green or blue light. 　 A convex lens provided on the light-emitting element; a second layer provided on and in contact with the convex lens; a first layer disposed on and in contact with the second layer; having The refractive index of the first layer is n １ , the refractive index of the second layer is n ２ , the refractive index of the convex lens is n ３ When n １ <n ２ <n ３ and The display device, wherein the convex lens is provided for each of the plurality of light-emitting elements. 　 In claim 3, The light-emitting element emits white light, and the display device has a colored layer between the light-emitting element and the convex lens. 　 In claim 3, The light-emitting element has a configuration in which an organic layer is sandwiched between a pixel electrode and a common electrode, the common electrode is an electrode shared by a plurality of the light-emitting elements, The common electrode and the convex lens have the same outer shape when viewed from above. 　 In claim 5, A first wiring is provided, The display device, wherein the first wiring is connected to the common electrode in a region overlapping with the convex lens. 　 In claim 3, a first pixel and a second pixel adjacent to each other; the first pixel and the second pixel each have the light-emitting element, the first pixel has a different emission color from the second pixel, A display device in which a gap surrounded by the second layer, or a gap surrounded by the second layer and the first layer, is provided between the first pixel and the second pixel. 　 In any one of claims 1 to 7, The display device, wherein the light-emitting element is an organic EL element. 　 In any one of claims 1 to 7, The second layer is formed of an inorganic material. 　 In any one of claims 1 to 7, The second layer is formed of an organic material.

8. An electronic device comprising the display device according to claim 1 as a light source, and a catadioptric system provided on a display surface side of the display device. 　 In claim 11, An electronic device comprising a touch sensor provided on the opposite side to the display surface of the display device.