Manufacturing method of semiconductor device and encapsulated body

Abstract

The present invention provides a method for manufacturing a semiconductor device capable of preventing warpage after molding (encapsulation), and also provides a sealed body. [Solution] A laminate including a support and a semiconductor chip mounted on the support is provided with X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less is ≦0.3, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is curved, linear or spotted in part or in whole; or Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising the steps of: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device and a sealing body. [Background technology]

[0002] In order to improve the performance, reduce costs, and make semiconductor devices smaller and lighter, there has been a trend toward high-density packaging by increasing the number of layers of semiconductor elements and making packages thinner, etc. Accordingly, electronic components that are roughly the same size as semiconductor elements such as ICs (Integrated Circuits), i.e., CSPs (Chip Size Packages), have come into widespread use.

[0003] Among them, Wafer Level Package (WLP) has been attracting attention. In WLP, a liquid epoxy resin composition is used for compression molding at the wafer stage, which is then cured to encapsulate a large number of semiconductor elements at once, and then the elements are singulated. Compared to a method in which semiconductor elements are encapsulated after being diced, WLP has high productivity, but there is a problem in that the wafer after molding (encapsulation) is prone to warping. If the wafer is warped, this can have adverse effects such as insufficient fixation of the wafer in the subsequent processes of transportation, grinding, dicing, etc., which can result in a decrease in the reliability of the semiconductor device.

[0004] In order to solve such problems, various sealing materials have been studied. For example, Patent Document 1 discloses a liquid epoxy resin composition for sealing containing a liquid bisphenol type epoxy resin, silicone rubber fine particles, a silicone modified epoxy resin, an aromatic amine curing agent, an inorganic filler, and an organic solvent. In addition, Patent Document 2 discloses a liquid epoxy resin composition for sealing containing a liquid epoxy resin, an aromatic amine curing agent, fine particles of a core-shell silicone polymer consisting of a solid silicone polymer core and an organic polymer shell, an inorganic filler, and an organic solvent.

[0005] Furthermore, Cited Document 3 describes a method in which an epoxy resin composition is filled on a laminate including a substrate and a semiconductor element mounted on the substrate so as to cover the entire substrate to form a molded body, and the molded body is cured to obtain an encapsulated body.

[0006] Furthermore, Cited Document 4 describes a process in which an epoxy resin composition is supplied to the entire surface of a mold, and then a laminate comprising a support and a semiconductor chip mounted on the support is attached to the mold, the entire surface of the laminate is filled with the epoxy resin composition to form a molded body, and the molded body is cured to obtain a sealed body.

[0007] Patent Document 5 describes a resin supplying method for supplying liquid resin to a supply object having a narrow portion, the method including the steps of: (a) setting the supply object in a chamber; (b) reducing the pressure in the chamber after the step (a); (c) supplying the resin so that it covers the narrow portion after the step (b); and (d) pressurizing the chamber after the step (c). It also describes that in the resin supplying step, the resin application pattern is partially or entirely curved or linear. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2007-023272 A [Patent Document 2] JP 2008-150555 A [Patent Document 3] Patent Publication No. 2021-036581 [Patent Document 4] JP 2004-056141 A [Patent Document 5] JP 2018-134846 A Summary of the Invention [Problem to be solved by the invention]

[0009] However, even when the epoxy resin compositions described in Patent Documents 1 and 2 are used as a sealing material, warping of the wafer after molding (sealing) sometimes occurs.

[0010] Furthermore, in the methods described in Patent Documents 3 and 4, although the details of the cause are not clear, warping of the wafer after molding may occur depending on the components constituting the epoxy resin composition (e.g., epoxy resin, curing agent, inorganic filler, etc.), their types, their contents, the thickness of the applied epoxy resin composition, and the application method.

[0011] In addition, the invention described in Patent Document 5 does not have the idea of ​​using a specific epoxy resin composition as a supplying material, and therefore the problem of solving the warpage of the wafer cannot be conceived of in the invention. Therefore, the method described in Patent Document 5 cannot solve the problem of the warpage of the wafer.

[0012] Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device capable of suppressing warpage of a support (e.g., a wafer) after molding, and to provide a sealing body with reduced warpage. [Means for solving the problem]

[0013] As a result of intensive research into achieving the above object, the present inventors have found that warpage after molding can be suppressed by manufacturing a semiconductor device using a method including specific steps. The present invention has been completed based on these findings.

[0014] That is, in the present disclosure, a laminate including a support and a semiconductor chip mounted on the support is provided with X C / X Sa step of supplying an epoxy resin composition under conditions such that a ratio of .DELTA..times ... Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0015] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: forming a semiconductor chip on a laminate having a support and a Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less is ≦0.8, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is curved, linear or spotted in part or in whole; or For the mold, Y R / Y Fa step of supplying an epoxy resin composition under conditions such that a coefficient of thermal expansion is less than or equal to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: Y F : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0016] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: C / X S ≦0.3, wherein the thickness of the epoxy resin composition is 1 to 20 mm; or Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X CThe radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0017] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: forming a semiconductor chip on a laminate having a support and a Y R / Y F ≦0.8, wherein the thickness of the epoxy resin composition is 1 to 20 mm; or For the mold, Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: Y F : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0018] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: C / X S≦0.3, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, or Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0019] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: forming a semiconductor chip on a laminate having a support and a Y R / Y F≦0.8, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, or For the mold, Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: Y F : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0020] In addition, in the present disclosure, the mold may include X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0021] In addition, in the present disclosure, the mold may include Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: Y F : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0022] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: C / X S≦0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition including an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0023] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: forming a semiconductor chip on a laminate having a support and a Y R / Y F ≦0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or For the mold, Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition including an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: YF : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0024] The epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0025] The content of the inorganic filler (C) is preferably 40 to 95% by mass relative to the epoxy resin composition (100% by mass).

[0026] The inorganic filler (C) is preferably silica.

[0027] The epoxy resin composition is preferably an epoxy resin composition that is liquid at 25°C.

[0028] The viscosity of the epoxy resin composition (25° C., Brookfield viscometer, 10 rpm) is preferably 50 to 250 Pa·s.

[0029] The amount of warpage of the sealing body at 25° C., measured by a shadow moire device, is preferably 4000 μm or less.

[0030] The present disclosure also provides a sealed body in which a laminate including a support and a semiconductor chip mounted on the support is sealed with a cured product of an epoxy resin composition, The sealed body has a warpage of 4000 μm or less at 25° C. as measured by a shadow moire device.

[0031] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: C / X S or a step of supplying an epoxy resin composition to a mold under conditions such that X C / X Sa step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: X C The radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0032] In addition, the present disclosure provides a method for manufacturing a semiconductor device comprising: forming a semiconductor chip on a laminate having a support and a Y R / Y F or supplying the epoxy resin composition to a mold under conditions such that Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising: Y F : Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, existing within a range of 30% from the center point of the support to the radius of the support

[0033] The amount of warpage of the sealing body at 25° C., measured by a shadow moire device, is preferably 4000 μm or less. Effect of the Invention

[0034] According to the manufacturing method of the semiconductor device of the present disclosure, warping of the support after molding (sealing) can be suppressed. Therefore, the subsequent processes of transportation, grinding, and singulation can be efficiently performed, and the reliability of the obtained semiconductor device is improved. In addition, since the support of the sealed body of the present disclosure has small warping, it can be precisely singulated. Therefore, by using the above-mentioned sealed body, a highly reliable semiconductor device can be obtained. [Brief description of the drawings]

[0035] [Figure 1] 1A to 1C are diagrams illustrating embodiments A1 and A2 in the manufacturing method of a semiconductor device according to the present disclosure. [Diagram 2] 11A to 11C are diagrams illustrating embodiments B1 and B2 in the method for manufacturing a semiconductor device according to the present disclosure. [Diagram 3] FIG. 1 is an explanatory diagram of an embodiment of A1. [Figure 4] FIG. 1 is an explanatory diagram of an embodiment of A2. [Diagram 5] 1 shows application patterns of the epoxy resin compositions provided in the examples. [Figure 6] 1 shows application patterns of the epoxy resin composition provided in the examples. The outer circles of the application patterns (a) to (c) coincide with the edges of the corresponding supports. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] <Method of Manufacturing Semiconductor Device> In the present disclosure, a method for manufacturing a semiconductor device includes the steps of: supplying an epoxy resin composition under specific conditions onto a laminate including a support and a semiconductor chip mounted on the support; or supplying an epoxy resin composition under specific conditions, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention provides a method for manufacturing a semiconductor device, comprising:

[0037] One embodiment of the present disclosure is A laminate including a support and a semiconductor chip mounted on the support is provided with X C / X S or a step of supplying an epoxy resin composition to a mold under conditions such that X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device. X C The radius of a circle that can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support X S : Radius of the support when viewed in a plane

[0038] In another embodiment of the present disclosure, A laminate including a support and a semiconductor chip mounted on the support is provided with Y R / Y F or supplying the epoxy resin composition to a mold under conditions such that Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold (hereinafter referred to as a "composition supplying step"); a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body (hereinafter referred to as a "molding and encapsulation step"); The present invention relates to a method for manufacturing a semiconductor device. Y F: Projected area of ​​the supplied epoxy resin composition on the support Y R : Projected area of ​​the supplied epoxy resin composition on the support, present within a range of 30% of the radius of the support from the center point of the support

[0039] The one embodiment of the present disclosure is A laminate including a support and a semiconductor chip mounted on the support is provided with X C / X S providing an epoxy resin composition under conditions such that a β-alkali ratio is ≦0.3; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; An embodiment (hereinafter referred to as "embodiment A1") of a method for manufacturing a semiconductor device comprising: Mold, X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less is 0.3, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; An embodiment according to a method for manufacturing a semiconductor device comprising the steps of: Includes.

[0040] X C The following will explain the wording in the above paragraph, "the radius of a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area onto the support." X Cis the radius of a circle, which can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to contain the supplied epoxy resin composition when viewed in a plane. In other words, the circle is drawn so that the epoxy resin composition is not present inside it, and the location where the circle is drawn is within a range of 90% of the radius of the support from the center point of the support on the support. The circle is the circle that has the maximum projected area when projected onto the support. The term "a circle that can be drawn within 90% of the radius of the support" means that the entire circle exists within 90% of the radius of the support when viewed in plan. As described below, the shape of the support in a plan view is not particularly limited, but is, for example, circular or rectangular. When the shape of the support is circular in a plan view, the "center point of the support" refers to the center of the support when viewed as a circle. When the shape of the support is rectangular in a plan view, the "center point of the support" refers to the center of a circumscribing circle of the support. When the shape of the support is rectangular in a plan view, the "radius of the support" refers to the radius of the circumscribing circle of the rectangular support. "Within 90% of the radius of the support from the center point of the support" means within a distance from the "center point of the support" that is 0.9 times the "radius of the support." In other words, it means the area enclosed by a circle that is centered on the "center point of the support" and has a radius that is 0.9 times the length of the "radius of the support."

[0041] In the above-mentioned embodiment of the present invention, in the composition supplying step, X C / X S By supplying the epoxy resin composition under the condition that X≦0.3, warping after molding can be suppressed. Although the reason for this is unclear, it is believed that by supplying the epoxy resin composition under the above conditions, the components contained in the epoxy resin composition are uniformly filled into the laminate. C / X SThe range is not particularly limited as long as it is 0.3 or less, but is preferably 0.25 or less, more preferably 0.2 or less, even more preferably 0.15 or less, particularly preferably 0.1 or less, and most preferably 0.05 or less.

[0042] The invention according to the embodiment of A1 will be described with reference to Fig. 3. Fig. 3 shows a schematic plan view of a laminate including a support and a semiconductor chip mounted on the support, to which an epoxy resin composition has been supplied. 21 is the support, 22 is the supplied (applied) epoxy resin composition, 23 is a circle that describes an area within 90% of the radius of the support, 24 is a circle that has the maximum projected area on the support, and L11 is the radius (X S ), L12 is the radius of the circle with the largest projected area on the support (X C The invention according to the embodiment of B1 differs from the invention according to the embodiment of A1 in that the epoxy resin composition is supplied to a mold rather than to a laminate. C / X S The method for identifying the condition for ≦0.3 is the same as that described with reference to FIG.

[0043] The other embodiments of the present disclosure include: A laminate including a support and a semiconductor chip mounted on the support is provided with Y R / Y F providing an epoxy resin composition under conditions such that a β-alkali ratio is ≦0.8; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; An embodiment (hereinafter referred to as "embodiment A2") of a method for manufacturing a semiconductor device comprising: For the mold, Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less is 0.8, and then mounting a laminate having a support and a semiconductor chip mounted on the support on the mold; and a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; An embodiment according to a method for manufacturing a semiconductor device comprising the steps of: Includes.

[0044] Y R The following explains the phrase "within 30% of the radius of the support from the center point of the support." As described below, the shape of the support in a plan view is not particularly limited, but is, for example, circular or rectangular. When the shape of the support is circular in a plan view, the "center point of the support" refers to the center of the support when viewed as a circle. When the shape of the support is rectangular in a plan view, the "center point of the support" refers to the center of a circumscribing circle of the support. When the shape of the support is rectangular in a plan view, the "radius of the support" refers to the radius of the circumscribing circle of the rectangular support. "Within 30% of the radius of the support from the center point of the support" means within a distance from the "center point of the support" that is 0.3 times the "radius of the support." In other words, it means the area enclosed by a circle that is centered on the "center point of the support" and has a radius that is 0.3 times the length of the "radius of the support."

[0045] The invention according to the other embodiment further comprises, in the composition supplying step, R / Y F By supplying the epoxy resin composition under conditions where Y is less than or equal to 0.8, warping after molding can be suppressed. The reason for this is unclear, but it is believed that by supplying the epoxy resin composition under the above conditions, the components contained in the epoxy resin composition are uniformly filled into the laminate. R / Y F The range is not particularly limited as long as it is 0.8 or less, but is preferably 0.7 or less, more preferably 0.6 or less, more preferably 0.5 or less, even more preferably 0.4 or less, particularly preferably 0.3 or less, and most preferably 0.2 or less.

[0046] The invention according to the embodiment of A2 will be described with reference to FIG. 4. FIG. 4 shows a schematic plan view of an epoxy resin composition supplied onto a laminate comprising a support and a semiconductor chip mounted on the support. 31 indicates the support, 32 indicates the supplied (applied) epoxy resin composition, 33 indicates a circle that describes an area within 30% of the radius of the support, L21 indicates the radius of the support, and L22 indicates a distance that is 30% of the radius of the support. The invention according to the embodiment of A2 differs from the invention according to the embodiment of B2 in that the epoxy resin composition is supplied to a mold rather than to a laminate, but Y R / Y F The method for identifying the condition for ≦0.8 is the same as that described with reference to FIG.

[0047] In the case of one-point supply (for example, one-point coating) to a laminate (specifically, X C / X S The effects of the present disclosure will be explained by comparing with the case where X exceeds 0.3) when filling a laminate with an epoxy resin composition. When the epoxy resin composition is filled into a laminate, the movement distance of the epoxy resin composition is long in the case of single-point supply (for example, single-point application), and therefore the distribution of the components contained therein (for example, epoxy resin and inorganic filler) tends to be non-uniform due to the difference in the fluidity of these components. In contrast, when X C / X S When the epoxy resin composition is supplied under the conditions in which the temperature is within the above range, the travel distance of the epoxy resin composition is short and the components are uniformly distributed, which is believed to lead to suppression of warpage after molding.

[0048] In the case of one-point supply (for example, one-point application) to the center of the laminate (specifically, Y R / Y F The effect of the present disclosure will be explained by comparing it with the case where Y = 1) in the case where Y = 1 ... R / YF When the epoxy resin composition is supplied under the conditions in which the temperature is within the above range, the travel distance of the epoxy resin composition is short and the components are uniformly distributed, which is believed to lead to suppression of warpage after molding.

[0049] In the above embodiment, the coating pattern in the present disclosure is X C / X S is not particularly limited as long as it is within the above range. R / Y F is not particularly limited as long as it is within the above range. For example, it can be applied uniformly (for example, on the entire surface of the laminate), or part or all of it can be applied in a curved shape such as a circle or a spiral; a linear shape such as a radial shape, a stripe shape (a pattern in which parallel lines are arranged at equal intervals), and a mesh pattern (a pattern in which lines cross in a lattice); or a spotted shape. Among these, when it is applied uniformly or when a part or all of the application pattern is linear (especially a stripe shape), warping after molding tends to be smaller. Furthermore, when it is applied uniformly, warping after molding tends to be particularly small. The reason for this is not clear, but the following explanation is possible.

[0050] Instructions for uniform application The warpage after molding is believed to be due to the epoxy resin composition not being filled uniformly into the laminate. For example, if the epoxy resin composition is not applied uniformly to the surface of the laminate, the epoxy resin composition filled into the laminate is unlikely to be uniform, and the warpage after molding tends to be large. On the other hand, if the epoxy resin composition is applied uniformly to the surface of the laminate, the epoxy resin composition filled into the laminate is likely to be uniform, and the warpage after molding tends to be small.

[0051] The method for uniformly applying the epoxy resin composition to the surface of the laminate is not particularly limited, but examples thereof include screen printing, spin coating, spray coating, airbrushing, roller coating, blade coater, coating using a wide line, and manual coating.

[0052] Explanation of when the coating pattern is partially or entirely linear (especially striped) Wafers such as silicon wafers are obtained by slicing a single crystal ingot along the crystal orientation. Therefore, the surface of the wafer has a direction derived from the crystal structure and slicing. When the coating pattern is linear, a part or all of the pattern can be formed along the direction of the wafer surface. The linear pattern is formed along the direction of the wafer surface, which may improve the fluidity of the epoxy resin composition, and the epoxy resin composition is uniformly filled in the laminate, and warpage after molding tends to be reduced. When the coating pattern is striped, the above tendency is particularly noticeable, probably because the linear pattern is formed parallel to the direction of the wafer surface. When the coating pattern is striped, it is preferable that the striped pattern is surrounded by a circular pattern, as shown in Figure 5 (b) and Figure 6 (b). In addition, it is preferable that the center of the circular pattern coincides with the center point of the support, and in this case, the radius of the circular pattern is preferably 60 to 95% of the radius of the support, more preferably 70 to 90%, and even more preferably 80 to 88%. The interval of the stripe pattern is not particularly limited, but is preferably 2 to 20% of the radius of the support, more preferably 3 to 10%, and further preferably 4 to 8%.

[0053] As described above, when the coating pattern is uniform, warping after molding tends to be smaller. On the other hand, when the coating pattern is partially or entirely curved such as circular and spiral, linear such as radial, stripe (pattern in which parallel lines are arranged at equal intervals), and mesh (pattern in which lines intersect in a lattice), or spotted, it is preferable from the viewpoint of efficiently manufacturing a semiconductor device since coating does not require time and labor. When the coating pattern is partially or entirely linear (especially stripe), it is particularly efficient.

[0054] The line width of the epoxy resin composition in the composition supplying step of the present disclosure is not particularly limited as long as it does not impair the effects of the present disclosure, but is, for example, preferably 0.1 to 30 mm, more preferably 0.1 to 20 mm, even more preferably 0.1 to 15 mm, more preferably 0.1 to 12 mm, more preferably 0.1 to 9 mm, more preferably 0.1 to 6 mm, even more preferably 0.1 to 5 mm, and particularly preferably 0.1 to 4.5 mm. The line width means the width of the epoxy resin composition when the supplied epoxy resin composition is viewed in a planar view in a direction parallel to the surface of the support.

[0055] The thickness (height) of the epoxy resin composition in the composition supplying step of the present disclosure is not particularly limited as long as it does not impair the effects of the present disclosure, but is, for example, preferably 1 to 20 mm, more preferably 1 to 15 mm, further preferably 1 to 10 mm, and particularly preferably 1 to 5 mm. The thickness (height) of the epoxy resin composition means the thickness (height) of the supplied epoxy resin composition in the direction perpendicular to the surface of the support.

[0056] When the epoxy resin composition is supplied at a single point (for example, applied at a single point) to the center point of the laminate, the thickness of the epoxy resin composition tends to exceed the above range, which is not preferable because the travel distance of the epoxy resin composition becomes long as described below.

[0057] The method for manufacturing a semiconductor device according to the present disclosure may include, in addition to the composition supplying step and the molding / encapsulating step, at least one step selected from the group consisting of a laminate preparation step, a grinding step, and a singulation step, which will be described later.

[0058] [Laminate preparation process] The laminate preparation step is a step of preparing a laminate including a support and a semiconductor chip mounted on the support by mounting a semiconductor chip on the support. In the laminate, the support and the semiconductor chip may be connected via solder. More specifically, the semiconductor chip may have solder bumps and may be connected to the support via the solder bumps. The support may also have solder bumps and may be connected to the semiconductor chip via the solder bumps.

[0059] In this step, the connection between the support and the semiconductor chip is not limited to being via solder, and may be made using, for example, an adhesive film or adhesive sheet such as a die attach film (DAF).

[0060] That is, this step may be a step of mounting a semiconductor chip having solder bumps on a support, connecting the semiconductor chip and the support via the solder bumps, and preparing a laminate. Alternatively, this step may be a step of mounting a semiconductor chip on a support having solder bumps, connecting the semiconductor chip and the support via the solder bumps, and preparing a laminate. Alternatively, this step may be a step of mounting a semiconductor chip having solder bumps on a support having solder bumps, connecting the semiconductor chip and the support via the solder bumps, and preparing a laminate. Alternatively, this step may be a step of mounting and connecting a semiconductor chip on a support via the adhesive film or adhesive sheet, and preparing a laminate.

[0061] The support is not particularly limited, but examples thereof include silicon wafers, silicon carbide wafers, sapphire wafers, compound semiconductor wafers (gallium phosphide, gallium arsenide, indium phosphide, gallium nitride), and glass epoxy substrates. The shape of the support in plan view is not particularly limited, but is, for example, circular or rectangular.

[0062] [Composition supply process] In the present disclosure, the composition supplying step is a step of supplying an epoxy resin composition under the specific conditions onto a laminate comprising a support and a semiconductor chip mounted on the support, or a step of supplying an epoxy resin composition under the specific conditions to a mold and then mounting a laminate comprising a support and a semiconductor chip mounted on the support onto the mold.

[0063] In the composition supplying step in the embodiment of A1 or A2, X is applied onto a laminate including a support and a semiconductor chip mounted on the support. C / X S ≦0.3 or Y R / Y F The composition supplying step may include a step of mounting a mold used for forming a molded body in a molding and sealing step on the laminate. That is, the composition supplying step includes a step of mounting a molded body on a laminate including a support and a semiconductor chip mounted on the support, the molded body being provided with a molded body and a ... C / X S ≦0.3 or Y R / Y F The epoxy resin composition may be supplied under conditions such that the modulus of elasticity is less than or equal to 0.8, and then a mold may be attached to the laminate.

[0064] In the embodiment of B1 or B2, the composition supplying step is performed by adding X C / X S ≦0.3 or Y R / Y F ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold. Note that the manner of supplying the epoxy resin composition to the mold includes not only supplying (e.g., applying) the epoxy resin composition directly to the mold, but also supplying (e.g., applying) the epoxy resin composition to a sheet made of paper, plastic, or the like and placing the sheet on the mold.

[0065] In cases where the present disclosure includes a laminate preparation step, the composition supply step is a step that follows the laminate preparation step.

[0066] (Epoxy resin composition) The epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0067] Epoxy resin (A) The epoxy resin composition contains the epoxy resin (A) and can form a cured product having high electrical insulation. The epoxy resin (A) is not particularly limited, but examples thereof include aromatic epoxy resins and aliphatic epoxy resins. The number of epoxy groups in the epoxy resin (A) is not particularly limited as long as it is 1 or more, but is preferably 2 or more (i.e., a polyfunctional epoxy resin). The number of epoxy groups in the epoxy resin (A) is not particularly limited, but is preferably 5 or less, for example. The epoxy resin (A) can be used alone or in combination of two or more.

[0068] The epoxy resin (A) may be liquid or solid at room temperature (25°C), but is preferably liquid at room temperature (25°C) from the viewpoint of the viscosity of the epoxy resin composition. At room temperature (25°C), the viscosity of the epoxy resin (A) is, for example, preferably 50,000 mPa·s or less, more preferably 40,000 mPa·s or less, even more preferably 30,000 mPa·s or less, and particularly preferably 20,000 mPa·s or less. Even if the epoxy resin is solid, it can be preferably used when it is used in combination with a liquid epoxy resin to show a liquid state as a mixture. The content of the liquid epoxy resin relative to the total amount of the epoxy resin (A) is not particularly limited, but is, for example, preferably 50 mass% or more, more preferably 75 mass% or more, even more preferably 90 mass% or more, and particularly preferably 95 mass% or more.

[0069] The aromatic epoxy resin is not particularly limited as long as it is an epoxy resin having a structure containing an aromatic ring such as a benzene ring, but examples thereof include bisphenol type epoxy resins such as bisphenol A type epoxy resins and bisphenol F type epoxy resins, novolac type epoxy resins, fluorene type epoxy resins, biphenyl aralkyl epoxy resins, diepoxy resins such as 1,4-phenyldimethanol diglycidyl ether, biphenyl type epoxy resins such as 3,3',5,5'-tetramethyl-4,4'-diglycidyloxybiphenyl, diglycidyl aniline, diglycidyl toluidine, tetraglycidyl-m-xylylenediamine, glycidyl amine type epoxy resins such as triglycidyl-p-aminophenol, and naphthalene ring-containing epoxy resins. Among them, glycidyl amine type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, biphenyl type epoxy resins, aminophenol type epoxy resins, and naphthalene ring-containing epoxy resins are preferred.

[0070] The aliphatic epoxy resin is not particularly limited, and examples thereof include diepoxy resins such as ethylene glycol diglycidyl ether, 1,4-butanediol diglycidyl ether, 1,4-hexanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, trimethylolpropane diglycidyl ether, glycerin diglycidyl ether, neopentyl glycol diglycidyl ether, polyethylene glycol diglycidyl ether, and polytetramethylene glycol diglycidyl ether (particularly, mono- or polyalkylene glycol-type diepoxy resins); trimethylolpropane triglycidyl ether, Examples of epoxy resins include triepoxy resins such as vinyl(3,4-cyclohexene) dioxide and glycerin triglycidyl ether; alicyclic epoxy resins such as vinyl(3,4-epoxycyclohexyl)-5,1-spiro-(3,4-epoxycyclohexyl)-m-dioxane; glycidylamine-type epoxy resins such as tetraglycidyl bis(aminomethyl)cyclohexane; hydantoin-type epoxy resins such as 3-diglycidyl-5-methyl-5-ethylhydantoin; and epoxy resins having a silicone skeleton such as 1,3-bis(3-glycidoxypropyl)-1,1,3,3-tetramethyldisiloxane. Among these, monoalkylene glycol-type diepoxy resins such as ethylene glycol diglycidyl ether, 1,4-hexanediol diglycidyl ether, and 1,4-butanediol diglycidyl ether, and polyalkylene glycol-type diepoxy resins such as polytetramethylene glycol diglycidyl ether and polyethylene glycol diglycidyl ether are preferred. The molecular weight of the aliphatic epoxy resin (when the aliphatic epoxy resin is a polymer, the molecular weight is the number average molecular weight in terms of standard polystyrene measured by gel permeation chromatography (GPC) using tetrahydrofuran as an elution solvent) is not particularly limited, and is, for example, preferably 200 to 10,000, more preferably 200 to 1,200, further preferably 200 to 1,000, and particularly preferably 300 to 900.

[0071] The content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 3 to 50% by mass, more preferably 5 to 40% by mass, further preferably 8 to 30% by mass, and particularly preferably 10 to 25% by mass. When the content of the epoxy resin (A) is within the above range, the thermal expansion of the cured product tends to be reduced and the toughness tends to be improved.

[0072] When the epoxy resin (A) contains a bisphenol-type epoxy resin, the content of the bisphenol-type epoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and even more preferably 10 to 50 mass%.

[0073] When the epoxy resin (A) contains a glycidylamine-type epoxy resin, the content of the glycidylamine-type epoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and further preferably 10 to 50 mass%.

[0074] When the epoxy resin (A) contains a naphthalene ring-containing epoxy resin, the content of the naphthalene ring-containing epoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and even more preferably 10 to 50 mass%.

[0075] When the epoxy resin (A) contains a polyalkylene glycol type diepoxy resin, the content of the polyalkylene glycol type diepoxy resin relative to the epoxy resin (A) (100 mass%) is not particularly limited, but is, for example, preferably 0.1 to 80 mass%, more preferably 1 to 60 mass%, and further preferably 10 to 50 mass%.

[0076] Hardener (B) The curing agent (B) is not particularly limited as long as it initiates, advances, or accelerates the polymerization of the epoxy resin, and examples thereof include amine-based curing agents, acid anhydride-based curing agents, phenol-based curing agents, and imidazole-based curing agents. The curing agent (B) may be used alone or in combination of two or more.

[0077] Examples of the amine-based curing agent include aromatic amines such as 4,4'-diamino-3,3'-diethyldiphenylmethane, diethyltoluenediamine, dimethylthiotoluenediamine, methylenedianiline, m-phenylenediamine, 4,4'-diaminodiphenylsulfone, and 3,3'-diaminodiphenylsulfone. Examples of the acid anhydride-based curing agent include alkylated tetrahydrophthalic anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, dodecenyl succinic anhydride, and methylnadic anhydride. Examples of the phenol-based curing agent include phenol novolac resin, cresol novolac resin, naphthol-modified phenolic resin, dicyclopentadiene-modified phenolic resin, and p-xylene-modified phenolic resin. Examples of the imidazole-based hardener include 2-methylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-imidazole, 2-phenylimidazole, and 2-phenyl-4-methylimidazole. Examples of the imidazole-based hardener include microcapsule-type imidazole-based hardener.

[0078] The content of the curing agent (B) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 0.1 to 30% by mass, more preferably 0.3 to 20% by mass, further preferably 0.5 to 15% by mass, and particularly preferably 1 to 12% by mass. When the content of the curing agent (B) is within the above range, the appearance of the cured product tends to be improved. In addition, when the content of the curing agent (B) is within the above range, the curing time of the epoxy resin composition can be appropriately adjusted. For example, when compression molding is performed using the epoxy resin composition, the curing time is not too long, improving the productivity of electronic parts, and warping is suppressed after the epoxy resin composition applied to a wafer on which a semiconductor chip is mounted is cured. In addition, the storage stability of the epoxy resin composition is improved.

[0079] ·Inorganic filler (C) The inorganic filler (C) is not particularly limited, but it is preferable that the inorganic filler has a property of suppressing the volume shrinkage (curing shrinkage) caused by the curing reaction of the epoxy resin composition, a property of suppressing the volume change (thermal shrinkage) caused by heat of the cured product, or a property of both of these. Examples of the inorganic filler (C) include silica, silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, lime sulfate, potassium titanate, magnesium oxide, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles having their surfaces treated. The inorganic filler (C) can be used alone or in combination of two or more kinds.

[0080] Among these, the inorganic filler (C) is preferably silica, alumina, aluminum nitride, magnesium oxide, or zinc oxide, more preferably silica, alumina, or aluminum nitride, and even more preferably silica. This is because, when the inorganic filler (C) has high thermal expansion, it tends to be prone to warping after molding, whereas silica has low thermal expansion and therefore tends to be less prone to warping after molding.

[0081] In order to keep the viscosity of the epoxy resin composition within an appropriate range, it is preferable that the inorganic filler (C) is surface-treated with a coupling agent having a functional group such as an epoxy group, a (meth)acryloyl group, or an amino group. Examples of the coupling agent include silane coupling agents such as 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane. For the surface treatment of the inorganic filler (C), one of the above coupling agents can be used alone, or two or more of them can be used in combination.

[0082] The shape of the inorganic filler (C) is not particularly limited, but examples thereof include a spherical shape (such as a true spherical shape or a nearly true spherical shape), a polyhedral shape, a rod shape (such as a cylindrical shape or a prismatic shape), a flat plate shape, a scale shape, and an irregular shape. Among these, a spherical shape is preferable from the viewpoint of increasing the loading amount.

[0083] The average particle size of the inorganic filler (C) is not particularly limited, but is preferably 1 nm or more, more preferably 3 nm or more, more preferably 5 nm or more, more preferably 10 nm or more, more preferably 15 nm or more, more preferably 20 nm or more, more preferably 25 nm or more, more preferably 30 nm or more, more preferably 35 nm or more, more preferably 40 nm or more, and particularly preferably 45 nm or more. Also, for example, it is preferably 5.0 μm or less, more preferably 3.0 μm or less, more preferably 2.0 μm or less, more preferably 1.5 μm or less, more preferably 1.0 μm or less, more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. By the average particle size of the inorganic filler (C) being within the above range, the epoxy resin composition has an appropriate viscosity, and the problem of warping after molding tends to be less likely to occur. In the present specification, the method for measuring the average particle size of the inorganic filler (C) is not particularly limited, but for example, it can be measured using a laser diffraction / scattering particle size distribution measuring device (product name: LS 13 320, manufactured by Beckman Coulter, Inc.).

[0084] The maximum particle size of the inorganic filler (C) is not particularly limited, but is preferably 5 nm or more, more preferably 10 nm or more, more preferably 20 nm or more, more preferably 40 nm or more, more preferably 100 nm or more, more preferably 200 nm or more, more preferably 250 nm or more, more preferably 300 nm or more, more preferably 400 nm or more, and particularly preferably 500 nm or more. Also, is preferably 20.0 μm or less, more preferably 10.0 μm or less, more preferably 5.0 μm or less, more preferably 3.0 μm or less, more preferably 1.0 μm or less, more preferably 0.8 μm or less, and particularly preferably 0.5 μm or less.

[0085] The content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 40% by mass or more, more preferably 50% by mass or more, and further preferably 60% by mass or more. When the content of the inorganic filler (C) is within the above range, warping after molding tends to be suppressed.

[0086] The content of the inorganic filler (C) relative to the above-mentioned epoxy resin composition (100% by mass) is not particularly limited, but from the viewpoints of ensuring an appropriate viscosity as an epoxy resin composition, reducing warpage after molding, and improving workability when preparing the epoxy resin composition, the content is preferably 95% by mass or less, more preferably 90% by mass or less, even more preferably 88% by mass or less, and particularly preferably 85% by mass or less.

[0087] In one embodiment of the present disclosure, the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is preferably 65 to 88 mass%, more preferably 68 to 88 mass%, and even more preferably 70 to 85 mass%.

[0088] Other ingredients The epoxy resin composition may contain a component other than the epoxy resin (A), the curing agent (B), and the inorganic filler (C) (hereinafter referred to as "other component (D)"). Examples of the other component (D) include a curable compound other than the epoxy resin (A), a thermoplastic resin such as a polyethylene resin, a polyester resin, a polyurethane resin, and a polyamide resin, a coupling agent, an ion trapping agent, a leveling agent, an antioxidant, an antifoaming agent, a flame retardant, a colorant, a reactive diluent, an elastomer, a solvent, and the like. The other component (D) may be used alone or in combination of two or more.

[0089] The content of the other component (D) relative to the above epoxy resin composition (100 mass%) is not particularly limited as long as it does not impair the effects of the present disclosure; for example, it is preferably 0.001 to 10 mass%, more preferably 0.01 to 5 mass%, and even more preferably 0.1 to 3 mass%.

[0090] ·Physical properties and manufacturing method of epoxy resin composition The viscosity of the epoxy resin composition (25°C, Brookfield viscometer, 10 rpm) is not particularly limited, but is, for example, preferably 1 to 500 Pa·s, more preferably 5 to 400 Pa·s, even more preferably 10 to 300 Pa·s, particularly preferably 50 to 250 Pa·s, and most preferably 100 to 200 Pa·s. When the viscosity is within the above range, warping after molding is inhibited and workability tends to improve.

[0091] The epoxy resin composition can be prepared by a known and commonly used method. For example, the epoxy resin (A), the curing agent (B), the inorganic filler (C), and other components (D) as required are simultaneously or separately introduced into an appropriate mixer, and stirred and mixed while melting by heating as required, to obtain the epoxy resin composition. When the epoxy resin (A) is solid, it is preferable to heat it to liquefy or fluidize it before mixing. When it is difficult to uniformly disperse the inorganic filler (C) in the epoxy resin composition, the epoxy resin and the inorganic filler (C) may be heated and mixed to uniformly disperse the inorganic filler (C) in the epoxy resin, and then cooled as required, and further components such as the curing agent (B) may be mixed to prepare the epoxy resin composition.

[0092] The mixer is not particularly limited, and examples thereof include a roll mill equipped with a stirrer and a heater, a Raikai mixer, a Henschel mixer, a tumbler, a planetary mixer, etc. The mixing ratio of each component is appropriately set according to the content of each component in the epoxy resin composition.

[0093] [Molding / sealing process] The molding / encapsulation step is a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor chip, and obtaining an encapsulated body. This step may include two steps: a step of filling the laminate with the epoxy resin composition to form a molded body (molding step), and a step of curing the molded body obtained by the molding step to encapsulate the semiconductor chip, and obtaining an encapsulated body (encapsulation step).

[0094] The method for forming the molded body is not particularly limited, but for example, a method of pressing a mold attached to the laminate in the direction of the laminate (support) (hereinafter, may be described as "compression") and decompressing the inside of the mold as necessary to form a compression molded body containing the laminate and the epoxy resin composition can be mentioned. In this process, when the inside of the mold is decompressed, the decompression may be performed before compression or may be performed simultaneously with compression. That is, the molding process can be rephrased as a process of filling the laminate (semiconductor chip) with the epoxy resin composition by compression and / or decompression. In addition, in the compression of this process, instead of pressing the mold in the direction of the laminate (support), a mode in which the laminate (support) is pressed in the direction of the mold may be adopted, or a mode in which the mold and the laminate (support) are narrowed from each other may be adopted.

[0095] As a method for forming the molded article, for example, a molding device is used to reduce the pressure of an epoxy resin composition that has been heated to reduce its viscosity as necessary, and a laminate is sealed with the epoxy resin composition to obtain a molded article. When the epoxy resin composition is heated to reduce its viscosity, the temperature is not particularly limited, and is, for example, preferably 30 to 200°C, and more preferably 40 to 150°C.

[0096] The decompression speed during compression molding is not particularly limited, but is preferably 10 to 350 torr / sec, more preferably 50 to 330 torr / sec, and even more preferably 150 to 310 torr / sec. Here, the "decompression speed" is the decompression speed shown in the following formula (S), the units of the initial pressure and the decompression limit pressure are "torr", the unit of the time to reach the decompression limit pressure is "second", and the decompression limit pressure is a change of 5 torr / sec or less. When the pressure is reduced, the pressure drops quickly, but when the pressure is reduced to a certain extent, the pressure drop becomes slower. When the pressure drop becomes 5 torr or less per second, it is considered that the decompression limit pressure has been reached. (Decompression rate) = (Initial pressure - Decompression limit pressure) / (Time to reach decompression limit pressure) Formula (S)

[0097] When the molded body is cured to seal the semiconductor chip, the epoxy resin composition may be cured by heating. The curing temperature is not particularly limited, but is preferably, for example, 110 to 200° C., and more preferably, 120 to 150° C. The curing time is not particularly limited, but is preferably, for example, 30 minutes to 7 hours, more preferably, 1 to 6 hours, even more preferably, 1 to 4 hours, and particularly preferably, 1 to 2 hours.

[0098] [Grinding process] The grinding process is a process in which the sealing material on the surface on the semiconductor chip side is ground to flatten and thin the encapsulated body obtained by the molding and encapsulation process, and a part of the semiconductor chip is exposed as necessary. There are no particular limitations on the grinding method, and commercially available grinding wheels and grinding devices can be used.

[0099] (sealed body) The sealed body is a laminate including a support and a semiconductor chip mounted on the support, and is sealed with a cured product of an epoxy resin composition. The sealed body may be obtained through the molding and sealing process, or may be obtained by further passing through the grinding process.

[0100] In the above-mentioned sealed body, the warpage of the sealed body at 25°C measured by a shadow moire device is not particularly limited, but is preferably 4000 μm or less, more preferably 3900 μm or less, even more preferably 3800 μm or less, particularly preferably 3700 μm or less, and most preferably 3600 μm or less. The warpage is not particularly limited, but is, for example, more than 0 μm, 1 μm or more, 10 μm or more, 50 μm or more, 100 μm or more, 200 μm or more, or 300 μm or more. The warpage can be measured, for example, by the method described in the examples below.

[0101] The warpage improvement rate (%) of the sealed body at 25° C. measured by a shadow moire device is not particularly limited, but is preferably 3% or more, more preferably 5% or more, even more preferably 8% or more, particularly preferably 10% or more, and most preferably 14% or more. The warpage improvement rate (%) can be calculated by the following formula. Warpage improvement rate (%) = [1-(warpage amount of the target encapsulant) / (warpage amount when the application method is one-point application] x 100

[0102] [Singulation process] The singulation process is a process for singulating the sealed body obtained in the molding and sealing process or the sealed body ground in the grinding process. The singulation process may be a process for singulating the sealed body after removing it from the mold. In the singulation process, the gaps between the semiconductor elements mounted on the support and sealed with the cured product of the epoxy resin composition are cut using a dicing blade, a laser, or other means to obtain a semiconductor device. The method of singulation is not particularly limited, and a commercially available singulation device can be used.

[0103] (Semiconductor Device) The semiconductor device of the present disclosure comprises a support, a semiconductor element mounted on the support, and a cured product of the epoxy resin composition that seals the semiconductor element. The semiconductor device is preferably a flip-chip type semiconductor device. The flip-chip type semiconductor device has a structure in which the support and the semiconductor element are connected via bumps (bump electrodes). In the semiconductor device, the gap between the semiconductor element and the support is sealed with a cured product (sealant) of the epoxy resin composition.

[0104] Hereinafter, an embodiment of a method for manufacturing a semiconductor device will be described with reference to FIGS. 1 and 2, but the invention according to the present disclosure is not limited thereto.

[0105] Regarding Figure 1 (corresponding to the A1 and A2 embodiments) A semiconductor chip 1 having solder bumps 2 on one surface is mounted on a support 3, and a laminate 4 including the semiconductor chip 1, the solder bumps 2, and the support 3 in this order is prepared (laminate preparation step, FIG. 1(a)). An epoxy resin composition 5 is applied onto the semiconductor chip 1 of the laminate 4, C / X S ≦0.3[X C X: the radius of a circle that can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support; S : Radius of the support when viewed in a plane, or Y R / Y F ≦0.8[Y F : Projected area of ​​the supplied epoxy resin composition on the support, Y R The epoxy resin composition is supplied using a nozzle 6 under the condition that the area of ​​the epoxy resin composition supplied onto the support is within a range of 30% of the radius of the support from the center point of the support], and then a mold 7 is attached (composition supplying step, (b) and (c) of FIG. 1). The attached mold 7 is pressed toward the support 3, and the pressure inside the mold 7 is reduced as necessary to form a compression molded body 8 containing the laminate 4 and the epoxy resin composition 5 (molding step, FIG. 1(d)). Note that in this step, instead of pressing the mold 7 toward the support 3, the support 3 may be pressed toward the mold 7, or the mold 7 and the support 3 may be narrowed from each other. The compression molded body 8 is thermally cured to seal the semiconductor chip 1, thereby forming a sealant 9 (sealing step, FIG. 1(e)). After removing the mold 7, the sealing body 9 including the semiconductor chip 1 is singulated (singulation step, (f) and (g) of FIG. 1). Example 1 described below discloses the present embodiment.

[0106] Regarding FIG. 2 (corresponding to the B1 and B2 embodiments) A semiconductor chip 11 having solder bumps 12 on one surface is mounted on a support 13 to prepare a laminate 14 including the semiconductor chip 11, the solder bumps 12, and the support 13 in this order (laminate preparation step, FIG. 2(a)). Mold 17, X C / X S ≦0.3[X C X: the radius of a circle that can be drawn within a range of 90% of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in a plane, and that has the maximum projected area on the support; S : Radius of the support when viewed in a plane, or Y R / Y F ≦0.8[Y F : Projected area of ​​the supplied epoxy resin composition on the support, Y R An epoxy resin composition 15 is supplied using a nozzle 16 under the condition that the area of ​​the epoxy resin composition supplied onto the support is within a range of 30% of the radius of the support from the center point of the support], and then the laminate 14 is placed into a mold 17 (composition supplying step, (b) and (c) of FIG. 2). The pressure inside the mold 17 is reduced to form a compression molded body 18 containing the laminate 14 and the epoxy resin composition 15 (molding step, FIG. 2(d)). The compression molded body 18 is thermally cured to seal the semiconductor chip 11, thereby forming a sealant 19 (sealing step, FIG. 2(e)). After removing the mold 17, the sealing body 19 including the semiconductor chips is singulated (singulation step, (f) and (g) of FIG. 1). Example 2 described below discloses a method according to this embodiment.

[0107] (Example of embodiment of A1) Embodiment A1-1 In the embodiment of A1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and further, the coating pattern is partially or entirely curved, linear, or spotted, which is referred to as embodiment A1-1.

[0108] That is, in embodiment A1-1, a stacked body including a support and a semiconductor chip mounted on the support is provided with X C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of .DELTA..times ... a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0109] In embodiment A1-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0110] Embodiment A1-2 In the embodiment of A1, the thickness of the epoxy resin composition in the step of supplying the epoxy resin composition is 1 to 20 mm is referred to as embodiment A1-2.

[0111] That is, in embodiment A1-2, a stacked body including a support and a semiconductor chip mounted on the support is provided with X C / X S ≦0.3, wherein the epoxy resin composition has a thickness of 1 to 20 mm; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0112] In embodiment A1-2, in the step of supplying the epoxy resin composition, the thickness of the supplied epoxy resin composition is 1 to 20 mm, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0113] Embodiment A1-3 In the embodiment of A1, an embodiment in which the epoxy resin composition contains, as the epoxy resin (A) in the step of supplying the epoxy resin composition, at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass% is referred to as embodiment A1-3.

[0114] That is, in embodiment A1-3, a stacked body including a support and a semiconductor chip mounted on the support is provided with X C / X S≦0.3, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0115] In embodiment A1-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0116] Embodiment A1-4 In the embodiment of A1, an embodiment in which the epoxy resin composition in the step of supplying the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less is referred to as embodiment A1-4.

[0117] That is, in the embodiment A1-4, a stacked body including a support and a semiconductor chip mounted on the support is provided with X C / X S supplying an epoxy resin composition under conditions such that a β-dispersion coefficient (β) of 0.3 or less is satisfied, the epoxy resin composition comprising an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0118] In embodiment A1-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0119] (Example of embodiment of B1) Embodiment B1-1 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and further, the coating pattern is partially or entirely curved, linear, or spotted, which is referred to as embodiment B1-1.

[0120] That is, in the embodiment B1-1, the mold is C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0121] In embodiment B1-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0122] Embodiment B1-2 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 85 mass% or less, which is referred to as embodiment B1-2.

[0123] That is, in the embodiment B1-2, the mold is C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0124] In embodiment B1-2, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 85 mass% or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0125] Embodiment B1-3 In the embodiment of B1, the epoxy resin composition in the step of supplying the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass% is referred to as embodiment B1-3.

[0126] That is, in the embodiment B1-3, the mold is C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0127] In embodiment B1-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0128] Embodiment B1-4 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%. This is referred to as embodiment B1-4.

[0129] That is, in the embodiment B1-4, the mold is C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as the curing agent (B), and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0130] In embodiment B1-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0131] Embodiment B1-5 In the embodiment of B1, an embodiment in which the epoxy resin composition in the step of supplying the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less is referred to as embodiment B1-5.

[0132] That is, in the embodiment B1-5, the mold is C / X S a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition including an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0133] In embodiment B1-5, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0134] (Example of embodiment of A2) Embodiment A2-1 In the embodiment of A2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and the coating pattern is partially or entirely curved, linear, or spotted, which is referred to as embodiment A2-1.

[0135] That is, in embodiment A2-1, a Y R / Y Fsupplying an epoxy resin composition under conditions such that a β-dispersion ratio (β) of the epoxy resin composition is less than or equal to 0.8, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, the coating pattern being curved, linear or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0136] In embodiment A2-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0137] Embodiment A2-2 In the embodiment of A2, an embodiment in which the thickness of the epoxy resin composition in the step of supplying the epoxy resin composition is 1 to 20 mm is referred to as embodiment A2-2.

[0138] That is, in embodiment A2-2, a Y R / Y F ≦0.8, wherein the epoxy resin composition has a thickness of 1 to 20 mm; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0139] In embodiment A2-2, in the step of supplying the epoxy resin composition, the thickness of the supplied epoxy resin composition is 1 to 20 mm, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0140] Embodiment A2-3 In the embodiment of A2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%. This is referred to as embodiment A2-3.

[0141] That is, in embodiment A2-3, a Y R / Y F ≦0.8, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0142] In embodiment A2-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0143] Embodiment A2-4 In the embodiment of A2, an embodiment in which the epoxy resin composition in the step of supplying the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less is referred to as embodiment A2-4.

[0144] That is, in embodiment A2-4, a Y R / Y F supplying an epoxy resin composition under conditions such that a β-dispersion coefficient (β) of 0.8 or less is satisfied, the epoxy resin composition comprising an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0145] In embodiment A2-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0146] (Example of embodiment of B2) Embodiment B2-1 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto a laminate by coating, and the coating pattern is partially or entirely curved, linear, or spotted, which is referred to as embodiment B2-1.

[0147] That is, in the embodiment B2-1, the mold is R / Y F a step of supplying an epoxy resin composition under conditions such that a coefficient of thermal expansion is less than or equal to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0148] In embodiment B2-1, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), which causes warping of the support. However, by supplying the epoxy resin composition onto the laminate under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0149] Embodiment B2-2 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 85 mass% or less, which is referred to as embodiment B2-2.

[0150] That is, in the embodiment B2-2, the mold is provided with Y R / YF a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0151] In embodiment B2-2, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 85 mass% or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0152] Embodiment B2-3 In the embodiment of B2, the epoxy resin composition in the step of supplying the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass% is referred to as embodiment B2-3.

[0153] That is, in the embodiment B2-3, the mold is R / Y Fa step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0154] In embodiment B2-3, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above specific conditions, the problem of suppressing warping is solved.

[0155] Embodiment B2-4 In the embodiment of B2, in the step of supplying an epoxy resin composition, the epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%. This is referred to as embodiment B2-4.

[0156] That is, in embodiment B2-4, the mold is provided with Y R / Y Fa step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0157] In embodiment B2-4, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains, as the curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100 mass%) is 8 to 50 mass%, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0158] Embodiment B2-5 In the embodiment of B2, an embodiment in which the epoxy resin composition in the step of supplying the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less is referred to as embodiment B2-5.

[0159] That is, in embodiment B2-5, the mold is provided with Y R / Y F a step of supplying an epoxy resin composition under conditions such that a ratio of 1:1 or less to 0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, the epoxy resin composition including an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; The present invention relates to a method for manufacturing a semiconductor device.

[0160] In embodiment B2-5, in the step of supplying an epoxy resin composition, the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, which causes warping of the support. However, by supplying the epoxy resin composition under the above-mentioned specific conditions, the problem of suppressing warping is solved.

[0161] In the step of supplying the epoxy resin composition in the embodiments of A1, A2, B1, and B2, it is preferable that the epoxy resin composition is not supplied to an area exceeding 90% of the radius of the support from the center point of the support. If the epoxy resin composition is supplied to the above-mentioned area, the epoxy resin composition may flow out of the support in the step of forming a molded product, which may have adverse effects such as contamination of the device. EXAMPLES

[0162] The present disclosure will be described in more detail below based on examples, but the present disclosure is not limited to these examples.

[0163] Compositions A and B having the compositions shown in Table 1 were prepared by appropriately selecting and mixing the epoxy resin (A), curing agent (B), and inorganic filler (C) so as to obtain the blending ratio shown in Table 1. The numerical values ​​for each composition in Table 1 indicate the mass ratio of the blended components.

[0164] Each component in Table 1 will be explained below. Epoxy resin (A) EP-3950L (product name): Glycidylamine type epoxy resin, liquid at 25°C, manufactured by ADEKA Corporation SE-300P (product name): Glycidylamine type epoxy resin, liquid at 25°C, manufactured by Shin-A T&C Co., Ltd. YX7400N (product name): Polyalkylene glycol type epoxy resin, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation RE410-S (product name): Bisphenol A type epoxy resin, liquid at 25°C, manufactured by Nippon Kayaku Co., Ltd. YDF-8170GSF: Bisphenol type F epoxy resin, liquid at 25℃, manufactured by Nippon Steel Chemical & Material Co., Ltd. Hardener (B) MEH-8005 (product name): Phenol-based hardener (phenol novolac), manufactured by Meiwa Chemical Industry Co., Ltd. 2MZA-PW (product name): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, manufactured by Shikoku Chemical Industry Co., Ltd. ·Inorganic filler (C) SE101G-SMO (product name): average particle size 0.3 μm, maximum particle size 5.0 μm or less, 3-glycidoxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd. YA050-SM1 (product name): average particle size 0.05 μm, maximum particle size 0.25 μm or less, 3-methacryloxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd.

[0165] [Table 1]

[0166] (Examples 1 and 2 and Comparative Example 1) The following experiment was carried out using a molding device, which corresponds to the embodiments A1 and A2 described in FIG. 1 and is manufactured by Apic Yamada Co., Ltd. and has a product name "WCM-300".

[0167] A WALTS FBW40A (10 mm die) and a Bare (20 mm die) were mounted at four locations on the east, west, north and south of a 12-inch circular wafer as a support to obtain a laminate. Composition A was supplied to this laminate. The amount of composition A supplied was the same in the examples and comparative examples. The coating patterns during supply were uniform coating as shown in (a) in FIG. 5 (Example 1), pattern coating with a stripe shape in part as shown in (b) (Example 2), and one-point supply (one-point coating) as shown in (c) (Comparative Example 1). The thickness of composition A in Example 1 was 1 mm, the thickness of composition A in Example 2 was 4 mm, and the thickness of composition A in Comparative Example 1 was more than 20 mm.

[0168] The radius of the wafer is 12 inches (about 150 mm), and "within 90% of the radius of the support" corresponds to a range of 1.08 inches (about 135 mm) from the center point of the wafer.

[0169] From here, X C / X S is the radius of a circle that can be drawn within a range of 1.08 inches from the center point of the support so as not to include the supplied composition A when viewed in a plane, and that has the maximum projected area on the support (i.e., X C ) is the radius of the support when viewed in a plane (i.e., X S ) and the calculated X C / X S The values ​​are shown in Table 2.

[0170] In addition, the "range of 30% of the radius of the support" corresponds to a range of 0.36 inches (about 45 mm) from the center point of the wafer. R / Y F is the projected area of ​​the applied composition A on the support within 0.36 inches from the center point of the support (i.e., Y R ) is the projected area of ​​the composition A applied to the entire support (i.e., Y F The calculated Y R / Y FThe values ​​are shown in Table 2.

[0171] Thereafter, a mold was attached to the laminate, and a compression molded body was formed by compressing and decompressing. Furthermore, the compression molded body was thermally cured to form an encapsulated body. These operations were performed under the conditions of a mold temperature of 120°C, a mold cure time of 400 seconds, a clamping force of 250 kN, and a PMC (Post Mold Cure) of 150°C / hr. The amount of warping at 25°C was measured using the obtained encapsulated body with a shadow moire device (AXP 2.0-DFP2, manufactured by Akrometrix). The highest position was taken as the amount of warping when the cured surface was placed on a horizontal table with the surface facing up. The calculated warping (μm) value and the improvement rate of warping (%) are shown in Table 2.

[0172] (Examples 3 and 4 and Comparative Example 2) The following experiment was carried out using a molding device, which corresponds to the embodiments B1 and B2 described in FIG. 2 and is manufactured by TOWA CORPORATION under the product name "CPM-1080."

[0173] Composition A was supplied to the mold. The amount of composition A supplied was the same in the examples and comparative examples. The coating patterns during supply were uniform coating as shown in (a) (Example 3), pattern coating with a stripe shape as shown in (b) (Example 4), and one-point supply (one-point coating) as shown in (c) (Comparative Example 2) in FIG. 6. A 12-inch circular wafer equipped with FBW40A (10 mm die) and Bare (20 mm die) manufactured by ON Semiconductor was used as a support to form a laminate. The thickness of composition A in Example 3 was 1 mm, the thickness of composition A in Example 4 was 4 mm, and the thickness of composition A in Comparative Example 2 was more than 20 mm.

[0174] The radius of the wafer is 12 inches (about 150 mm), and "within 90% of the radius of the support" corresponds to a range of 1.08 inches (about 135 mm) from the center point of the wafer.

[0175] From here, X C / XS is the radius of a circle that can be drawn within a range of 1.08 inches from the center point of the support so as not to include the supplied composition A when viewed in a plane, and that has the maximum projected area on the support (i.e., X C ) is the radius of the support when viewed in a plane (i.e., X S ) and the calculated X C / X S The values ​​are shown in Table 2.

[0176] Also, Y R / Y F is the projected area of ​​the applied composition A on the support within 0.36 inches from the center point of the support (i.e., Y R ) is the projected area of ​​the composition A applied to the entire support (i.e., Y F The calculated Y R / Y F The values ​​are shown in Table 2.

[0177] The laminate was placed in a mold, compressed and decompressed to form a compression molded body. The compression molded body was then thermally cured to form an encapsulated body. These operations were performed under the conditions of a mold temperature of 120°C, a mold cure time of 400 seconds, a clamping force of 250 kN, and a PMC of 150°C / hr. The amount of warping at 25°C was measured using the obtained encapsulated body with a shadow moire device. The highest position was taken as the amount of warping when the cured surface was placed on a horizontal table with the surface facing up. The calculated warping (μm) value and the improvement rate of warping (%) are shown in Table 2.

[0178] (Examples 5 and 6 and Comparative Example 3) Except for using composition B instead of composition A, sealed bodies were produced in the same manner as in Examples 1 and 2 and Comparative Example 1 (Examples 5 and 6 and Comparative Example 3, respectively). C / X S The value of the calculated Y R / Y FThe values ​​of, the calculated warpage (μm) values, and the warpage improvement rates (%) are shown in Table 2. The thickness of composition B in Example 5 was 1 mm, the thickness of composition B in Example 6 was 4 mm, and the thickness of composition B in Comparative Example 3 was more than 20 mm.

[0179] [Table 2] [Explanation of symbols]

[0180] 1. Semiconductor chip 2 Solder Bumps 3 Support 4. Laminate 5. Epoxy resin composition 6 Nozzles 7. Mold 8 Compression Molded Body 9 Sealing body 11 Semiconductor chips 12 Solder Bumps 13 Support 14 Laminate 15 Epoxy resin composition 16 Nozzles 17 Mold 18 Compression Molded Body 19 Sealing body 21 Support 22 Epoxy resin composition Supplied (applied) epoxy resin composition 23 A circle that draws an area within 90% of the radius of the support 24 Circle with the largest projected area on the support L11 Radius of support (X C ) L12 The radius of the circle with the largest projected area on the support (X S ) 31 Support 32 Epoxy resin composition Supplied (applied) epoxy resin composition 33 A circle drawn within 30% of the radius of the support L21 Radius of support L22 30% distance from the radius of the support

Claims

1. A stacked body including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ratio of 1 / 2 to 1 / 4 is ≦0.3, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is curved, linear, or spotted in part or in whole; or Mold, X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ρ-value of 0.3 or less is satisfied, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: X Ｃ : The radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support X Ｓ : Radius of the support when viewed in plan

2. A laminate including a support and a semiconductor chip mounted on the support is provided with a Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a β-axis angle .gamma.-ray diffraction (TDI) of the epoxy resin composition is 0.8 or less, the epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is curved, linear, or spotted in part or in whole; or For the mold, Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ-value of 0.8 or less is satisfied, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and the coating pattern is curved, linear, or spotted in part or in whole; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support Y Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

3. A stacked body including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ ≦0.3, and the thickness of the epoxy resin composition is 1 to 20 mm; or Mold, X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ratio of 1 / (M / M) to 1 / (M / M) is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: X Ｃ : The radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support X Ｓ : Radius of the support when viewed in plan

4. A laminate including a support and a semiconductor chip mounted on the support is provided with a Y Ｒ / Y Ｆ or a step of supplying an epoxy resin composition under conditions such that a viscosity of the epoxy resin composition is ≦0.8, wherein the thickness of the epoxy resin composition is 1 to 20 mm; For the mold, Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ / ρ ratio of the epoxy resin composition to the mold is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 85% by mass or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support Y Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

5. A stacked body including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a β-glucan value (βg) of the epoxy resin composition is ≦0.3, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; or Mold, X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ρ / ρ is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: X Ｃ : The radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support X Ｓ : Radius of the support when viewed in plan

6. A laminate including a support and a semiconductor chip mounted on the support is provided with a Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a β-glucan value of 0.8 or less is satisfied, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; or For the mold, Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ / ρ is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of a glycidylamine-type epoxy resin, a bisphenol-type epoxy resin, and a polyalkylene glycol-type diepoxy resin, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support Y Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

7. Mold, X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ρ / ρ is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: X Ｃ : The radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support X Ｓ : Radius of the support when viewed in plan

8. For the mold, Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ρ / ρ is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support Y Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

9. A stacked body including a support and a semiconductor chip mounted on the support is provided with an X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a β-dispersion coefficient (β) of the epoxy resin composition is 0.3 or less, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; Mold, X Ｃ / X Ｓ a step of supplying an epoxy resin composition under conditions such that a ratio of 1 / 2 to 1 / 4 is ≦0.3, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: X Ｃ : The radius of a circle that can be drawn from the center point of the support so as not to include the supplied epoxy resin composition and within a range of 90% of the radius of the support when viewed in a plane, and that has the largest projected area onto the support X Ｓ : Radius of the support when viewed in plan

10. A laminate including a support and a semiconductor chip mounted on the support is provided with a Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a β-dispersion coefficient (β) of the epoxy resin composition is 0.8 or less, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; or For the mold, Y Ｒ / Y Ｆ a step of supplying an epoxy resin composition under conditions such that a ratio of 1 / 2 to 1 / 4 is ≦0.8, and then mounting a laminate comprising a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body; A method for manufacturing a semiconductor device comprising: Y Ｆ : Projected area of ​​the supplied epoxy resin composition on the support Y Ｒ : Projected area of ​​the supplied epoxy resin composition onto the support, existing within a range of 30% of the radius of the support from the center point of the support

11. The method for manufacturing a semiconductor device according to any one of claims 3 to 10, wherein the epoxy resin composition comprises an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

12. 11. The method for manufacturing a semiconductor device according to claim 1, wherein a content of the inorganic filler (C) is 40 to 95% by mass relative to the epoxy resin composition (100% by mass).

13. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the inorganic filler (C) is silica.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the epoxy resin composition is an epoxy resin composition that is liquid at 25°C.

15. 15. The method for manufacturing a semiconductor device according to claim 14, wherein the viscosity of the epoxy resin composition (25° C., Brookfield viscometer, 10 rpm) is 50 to 250 Pa·s.

16. 11. The method for manufacturing a semiconductor device according to claim 1, wherein the amount of warpage of the sealing body at 25° C. measured by a shadow moire device is 4000 μm or less.

17. (a) setting an object to be supplied in a chamber; (b) after the step (a), reducing the pressure inside the chamber; (c) after the step (b), supplying resin so that it covers the narrow portion; (d) after the step (c), pressurizing the inside of the chamber; 11. The method for manufacturing a semiconductor device according to claim 1, excluding a resin supplying method for supplying a liquid resin to an object having a narrow portion, comprising:

18. A process of filling the laminate with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor chip, to obtain an encapsulated body, The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the method comprises the steps of: compressing the laminate, reducing pressure simultaneously, thereby filling the laminate with an epoxy resin composition to form a molded body; and curing the molded body to encapsulate the semiconductor chip, thereby obtaining an encapsulated body.

19. The epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), The epoxy resin (A) contains at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin, The curing agent (B) includes at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent; The inorganic filler (C) contains silica having an average particle size of 5.0 μm or less, the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 40 to 95% by mass, the epoxy resin composition is liquid at 25°C, 11. The method for manufacturing a semiconductor device according to claim 1, wherein the viscosity (25° C., Brookfield viscometer, 10 rpm) is 50 to 250 Pa·s.

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