Inspection device and semiconductor device manufacturing method

Abstract

The probe according to the present disclosure is characterized in that it is cylindrical, at least a portion of its side is formed of a conductor, and is configured to roll and move over the object to be measured, with the conductor on the side coming into contact with an electrode of the object to be measured.

Description

[Technical field]

[0001] The present disclosure relates to a probe, an inspection device, and a method for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a surface contact probe that electrically contacts a counter electrode to perform electrical processing by applying a voltage to the counter electrode or measuring a current, etc. The surface contact probe includes a conductive probe support, an elastic layer that is integral with the probe support, and a conductive layer that is provided on at least the surface of the elastic layer and is in electrical contact with the counter electrode. The probe support is configured in a band shape, and the elastic layer is configured in a hollow convex shape. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2011-196791 A Summary of the Invention [Problem to be solved by the invention]

[0004] In general, in LD (Laser Diode) inspection equipment, each LD chip is picked up and placed on the inspection stage, and the inspection is performed by pressing a probe needle against the electrode on the top surface of the LD chip. In such inspection equipment, the tip of the probe needle may become deformed and worn as the number of inspections increases, resulting in contact failure. In addition, when the same sample is inspected multiple times, unevenness may occur on the electrode surface, and this unevenness may cause appearance defects and contact failure.

[0005] Deterioration due to wear can be suppressed by changing the shape of the probe tip. However, depending on the shape of the probe tip and electrode, the contact area between the probe and the electrode may become small, raising concerns about increased contact resistance. In the probe of Patent Document 1, a semicircular elastic layer is placed on the support and a metal film is formed on the elastic layer, reducing damage to the electrode during contact. On the other hand, when inspecting a chip, the probe needs to be raised and lowered and moved from chip to chip. This requires time to raise and lower the probe.

[0006] An object of the present disclosure is to provide a probe, an inspection device, and a method for manufacturing a semiconductor device that can reduce the inspection time. [Means for solving the problem]

[0007] The inspection device according to the present disclosure comprises a columnar probe having at least a portion of a side formed of a conductor and configured to roll and move over an object to be measured so that the conductor on the side comes into contact with an electrode of the object to be measured, and wiring electrically connected to the conductor and configured to supply current to the probe, wherein the probe has a hole extending in the axial direction of the probe, and the wiring has an insertion portion inserted into the hole and electrically connected to the conductor, and a conductive shaft extending from the insertion portion to the outside of the probe, and the conductive shaft is extendable and contractible. The inspection device disclosed herein comprises a columnar probe having at least a portion of a side formed of a conductor and configured to roll and move over an object to be measured so that the conductor on the side comes into contact with an electrode of the object to be measured, and wiring electrically connected to the conductor and configured to supply current to the probe, wherein the probe has a hole extending in the axial direction of the probe, and the wiring has an insertion portion inserted into the hole and electrically connected to the conductor, and a conductive axis extending from the insertion portion to the outside of the probe, and the cross-sectional shape of the insertion portion and the cross-sectional shape of the hole are polygonal. The inspection device disclosed herein comprises a columnar probe having at least a portion of a side formed of a conductor and configured to roll and move over an object to be measured so that the conductor on the side comes into contact with an electrode of the object to be measured, and wiring electrically connected to the conductor and configured to supply current to the probe, wherein the probe has a hole extending in the axial direction of the probe, and the wiring has an insertion portion inserted into the hole and electrically connected to the conductor, and a conductive shaft extending from the insertion portion to the outside of the probe, and the side of the insertion portion is provided with unevenness. The inspection device disclosed herein comprises a columnar probe having at least a portion of a side formed of a conductor and configured to roll and move over an object to be measured so that the conductor on the side comes into contact with an electrode of the object to be measured, wiring electrically connected to the conductor and configured to supply current to the probe, and a cover provided on the electrode and having a first slit formed therein to expose the electrode, the first slit being shaped to allow the probe to come into contact with the electrode through the first slit. The inspection device disclosed herein comprises a columnar probe having at least a portion of a side surface formed of a conductor and configured to roll and move over an object to be measured so that the conductor on the side surface comes into contact with an electrode of the object to be measured, and wiring electrically connected to the conductor and configured to supply current to the probe, wherein the probe has a second slit formed around the entire circumference of the side surface, and the wiring has a ring-shaped portion that is positioned in the second slit when the probe is inserted, and a conductive shaft extending from the ring-shaped portion.

[0008] The method for manufacturing a semiconductor device according to the present disclosure includes bringing a side surface of a columnar probe having at least a portion of a side surface formed of a conductor into contact with a semiconductor device that is an LD chip, rolling and moving the probe over the semiconductor device in a direction intersecting with a laser optical axis of the LD chip while the side surface of the probe is in contact with the semiconductor device, bringing the conductor on the side surface into contact with an electrode of the semiconductor device, and inspecting the semiconductor device while the conductor is in contact with the electrode. a hole extending in an axial direction of the probe is formed in the probe, and a wiring configured to supply a current to the probe has an insertion portion inserted into the hole and electrically connected to the conductor, and a conductive shaft extending from the insertion portion to an outside of the probe, the conductive shaft being extendable and contractible. It is characterized by: Effect of the Invention

[0009] In the method of manufacturing the probe and semiconductor device according to the present disclosure, the probe rolls over the object to be measured, and the conductor on the side of the probe comes into contact with the electrode on the object to be measured. Therefore, there is no need to raise and lower the probe when moving to the next chip. This reduces the inspection time. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a perspective view of an inspection device according to a first embodiment. [Diagram 2] 1 is a cross-sectional view of a probe according to a first embodiment. [Diagram 3] FIG. 2 is a side view of the probe according to the first embodiment. [Figure 4] 3A to 3C are diagrams illustrating the structure of a conductive shaft according to the first embodiment. [Diagram 5] FIG. 4 is a front view illustrating the operation of the probe according to the first embodiment. [Figure 6] 4 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 7] 4 is a plan view illustrating the relationship between a probe and emitted light according to the first embodiment. FIG. [Figure 8] 4 is a plan view illustrating the operation of the probe and the PD according to the first embodiment. FIG. [Figure 9] 10 is a plan view illustrating the operation of the inspection stage according to the modified example of the first embodiment. FIG. [Figure 10A]3 is a diagram showing an example of a cross section of a probe according to the first embodiment. FIG. [Figure 10B] 3 is a diagram showing an example of a cross section of a probe according to the first embodiment. FIG. [Figure 11] FIG. 11 is a perspective view of an inspection device according to a second embodiment. [Figure 12] 10 is a front view illustrating the operation of the probe according to the second embodiment. FIG. [Figure 13] 10 is a flowchart showing a method for manufacturing a semiconductor device according to a second embodiment. [Figure 14] FIG. 11 is a cross-sectional view of an inspection device according to a third embodiment. [Figure 15] FIG. 11 is a perspective view of an inspection device according to a fourth embodiment. [Figure 16] FIG. 11 is a side view of a probe according to a fourth embodiment. [Figure 17] 13 is a front view illustrating the operation of a probe according to embodiment 4. FIG. [Figure 18A] 13 is a diagram illustrating the function of a guide according to the fourth embodiment. FIG. [Figure 18B] 13 is a diagram illustrating the function of a guide according to the fourth embodiment. FIG. [Figure 19A] 13 is a diagram illustrating the function of a guide according to the fourth embodiment. FIG. [Figure 19B] 13 is a diagram illustrating the function of a guide according to the fourth embodiment. FIG. [Figure 20] FIG. 13 is a perspective view of an inspection device according to a fifth embodiment. [Figure 21] FIG. 13 is a cross-sectional view of a probe according to a fifth embodiment. [Figure 22] FIG. 13 is a side view of a probe according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] A probe, an inspection device, and a method for manufacturing a semiconductor device according to each embodiment will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0012] Embodiment 1 FIG. 1 is a perspective view of an inspection device 100 according to the first embodiment. The inspection device 100 includes an inspection stage 10, a probe 20, and wiring 30 configured to supply a current to the probe 20. A plurality of semiconductor devices 50 are arranged on the inspection stage 10. The semiconductor devices 50 are, for example, LD chips. During inspection, an electrode 51 on the upper surface side of the semiconductor device 50 contacts the probe 20, and an electrode on the back surface side of the semiconductor device 50 contacts the inspection stage 10. In this state, a current is supplied from a power source 60 to the semiconductor device 50 via the wiring 30, the probe 20, and the inspection stage 10, and inspection is performed. At this time, for example, the inspection stage 10 becomes GND.

[0013] 2 is a cross-sectional view of the probe 20 according to the first embodiment. The probe 20 is columnar, and is formed, for example, entirely of a conductor. The probe 20 is, for example, cylindrical. The probe 20 is formed with a hole 22 extending in the axial direction of the probe 20. The wiring 30 is inserted into the hole 22 and is electrically connected to the probe 20. The probe 20 does not have to be formed entirely of a conductor. It is sufficient that at least a part of the side surface 21 of the probe 20 is formed of a conductor, and the wiring 30 is electrically connected to the conductor of the side surface 21.

[0014] The probe 20 is configured to roll and move over the semiconductor device 50 to be measured, so that the conductor on the side surface 21 comes into contact with the electrode 51 of the measurement target. The probe 20 may be called a roller type.

[0015] 3 is a side view of the probe 20 according to the first embodiment. The wiring 30 has an insertion portion 32 that is inserted into the hole 22 of the probe 20 and electrically connected to the conductor on the side surface 21 of the probe 20, and a conductive shaft 31 that extends from the insertion portion 32 to the outside of the probe 20. The hole 22 of the probe 20 penetrates the probe 20 in the axial direction. However, the hole 22 of the probe 20 may be formed on both end surfaces of the probe 20, and may not penetrate the probe 20 in the axial direction. However, considering the process of forming the hole 22, a penetrating hole 22 is easier to suppress misalignment of the forming position.

[0016] Furthermore, the probe 20 and the wiring 30 may be provided detachably. This allows the probe 20 to be detached from the wiring 30 and only the probe 20 to be replaced when the probe 20 deteriorates or is damaged. For example, by providing one wiring 30 on each side of the probe 20, the wiring 30 can be easily removed as shown by the arrow in Fig. 3. However, in the case where the hole 22 of the probe 20 penetrates in the axial direction, one wiring 30 may be provided to penetrate the hole 22 of the probe 20.

[0017] The conductive shaft 31 is connected to a moving mechanism 61. The moving mechanism 61 is configured to move the conductive shaft 31 along the alignment direction of the semiconductor device 50. When the conductive shaft 31 is moved by the moving mechanism 61, the probe 20 is configured to roll on the electrode 51 with the insertion portion 32 as an axis.

[0018] 4 is a diagram illustrating the structure of the conductive shaft 31 according to the first embodiment. The conductive shaft 31 may be extendable. For example, the conductive shaft 31 has a double structure and extends as shown by the arrow in FIG. 4. As a result, when the probe 20 is tilted and makes uneven contact with the electrode 51 as shown in FIG. 4, a force acts in a direction to eliminate the tilt of the probe 20. Therefore, uneven contact with the electrode 51 can be prevented.

[0019] FIG. 5 is a front view illustrating the operation of the probe 20 according to the first embodiment. FIG. 6 is a flowchart illustrating a method for manufacturing a semiconductor device 50 according to the first embodiment. A method for inspecting the semiconductor device 50 will be described with reference to FIGS. 5 and 6. First, a plurality of semiconductor devices 50 are arranged on the inspection stage 10 (step 1). That is, the plurality of semiconductor devices 50 are arranged in the moving direction of the probe 20. Note that, of the plurality of semiconductor devices 50, only semiconductor devices 50a and 50b are shown in FIG. 5.

[0020] Next, the probe 20 is brought into contact with the semiconductor device 50a from above the semiconductor device 50a (step 2). That is, the side surface 21 of the probe 20 is brought into contact with the electrode 51 of the semiconductor device 50a. At this time, for example, if only a portion of the side surface 21 is formed of a conductor, the probe 20 may be rolled and moved above the semiconductor device 50a until the conductor of the side surface 21 comes into contact with the electrode 51 of the semiconductor device 50a.

[0021] Next, with the probe 20 and the electrode 51 in contact with each other, a current is supplied to the probe 20 via the wiring 30 to inspect the semiconductor device 50a (step 3). Next, with the side surface 21 of the probe 20 in contact with the semiconductor device 50a, the probe 20 is rolled and moved over the semiconductor devices 50 as shown by the arrows in FIG. 5 (step 4). This brings the conductor on the side surface 21 of the probe 20 into contact with the electrode 51 of the adjacent semiconductor device 50b (step 5). Next, with the conductor of the probe 20 in contact with the electrode 51, the semiconductor device 50b is inspected in the same manner as in step 3 (step 6).

[0022] By repeating steps 4 to 6, it is possible to inspect a plurality of semiconductor devices 50 lined up on the inspection stage 10. In other words, the probe 20 is rolled and moved across the plurality of semiconductor devices 50 lined up in the movement direction of the probe 20, thereby inspecting the plurality of semiconductor devices 50.

[0023] Next, the effects of this embodiment will be described. According to this embodiment, the axial length of the probe 20 can be designed to increase the contact area with the electrode 51 compared to a needle-shaped probe. This reduces the contact resistance, reduces local pressure on the electrode 51, and suppresses damage to the electrode 51. In addition, deformation and wear of the probe 20 can be suppressed.

[0024] Furthermore, the probe 20 rolls and moves on the object to be measured, and the conductor on the side surface 21 of the probe 20 comes into contact with the electrode 51 of the object to be measured. Therefore, it is not necessary to raise and lower the probe 20 when moving to the next chip. This makes it possible to shorten the inspection time. It is preferable that the multiple semiconductor devices 50 are arranged close enough that the probe 20 does not fall into the gaps between the semiconductor devices 50 when it rolls. The inspection method of this embodiment can be applied even if the semiconductor device 50, which is an LD chip, is in a bar state.

[0025] Furthermore, since the probe 20 is detachable from the wiring 30, it is possible to replace only the probe 20. This contributes to reducing costs.

[0026] 7 is a plan view for explaining the relationship between the probe 20 and the emitted light 55 according to the first embodiment. The axial length of the probe 20 may be set so as not to interfere with the emitted light 55 of the laser to be measured. The length of the probe 20 of this embodiment can be easily changed. For example, the probe 20 may be designed so as not to protrude from the LD chip in a plan view.

[0027] 7, the probe 20 is basically arranged parallel to the laser optical axis. However, the probe 20 may be arranged slightly obliquely to the laser optical axis as long as it does not interfere with the emitted light 55. During inspection, the position of the probe 20 may be shifted from the center of the chip, that is, from directly above the active layer, in order to reduce the load on the active layer.

[0028] 8 is a plan view for explaining the operation of the probe 20 and the PD (Photo Diode) 62 according to the first embodiment. During inspection, a current is supplied to the probe 20, and emitted light 55 is emitted from the semiconductor device 50, which is an LD chip. Inspection is performed by detecting this emitted light 55 with the PD 62. At this time, as shown by the arrow in FIG. 8, the PD 62 also moves in accordance with the movement of the probe 20. This makes it possible to perform inspection in accordance with the movement of the probe 20.

[0029] 9 is a plan view for explaining the operation of the inspection stage 10 according to a modification of the embodiment 1. The positions of the probe 20 and the PD 62 may be fixed, and the inspection stage 10 may be moved. In this case, too, it can be said that the probe 20 moves by rolling over the multiple semiconductor devices 50 relatively.

[0030] Also, the shapes of the hole 22 of the probe 20 and the insertion part 32 of the wiring 30 are preferably such that they can reliably contact each other. Figs. 10A and 10B are diagrams showing examples of the cross section of the probe according to the first embodiment. In the example of Fig. 10A, the cross-sectional shape of the insertion part 32a and the cross-sectional shape of the hole 22a of the probe 20a are octagonal. This is not limited to this, and the cross-sectional shape of the insertion part 32a and the cross-sectional shape of the hole 22a of the probe 20a may be polygonal. In the example of Fig. 10B, the cross-sectional shape of the hole 22 of the probe 20 is circular, and the side of the insertion part 32b is provided with irregularities. It may be said that the cross-sectional shape of the insertion part 32b is petal-shaped.

[0031] In this embodiment, the example of the probe 20 being cylindrical has been described, but the probe 20 may be a prism having a polygonal cross-sectional shape as long as it can roll and move on the semiconductor device 50. In addition, any wiring that is electrically connected to the conductor on the side surface 21 of the probe 20 and can supply a current to the probe 20 can be adopted as the wiring 30. In addition, in this embodiment, the moving mechanism 61 rotates and moves the probe 20 via the conductive shaft 31, but the means for rotating and moving the probe 20 is not limited to via the conductive shaft 31. In addition, the semiconductor device 50 does not have to be a laser. As the measurement target of this embodiment, any semiconductor device having an electrode 51 formed on its upper surface can be adopted.

[0032] The above-mentioned modifications can be appropriately applied to the probe, inspection device, and semiconductor device manufacturing method according to the following embodiments. Note that the probe, inspection device, and semiconductor device manufacturing method according to the following embodiments have many points in common with the first embodiment, so the differences from the first embodiment will be mainly described.

[0033] Embodiment 2 11 is a perspective view of an inspection device 200 according to the second embodiment. The inspection device 200 is different from the inspection device 100 according to the first embodiment in that the inspection device 200 includes a cover 240 that is provided on the electrode 51 and has a slit 241 that exposes the electrode 51. The slit 241 has a shape that allows the probe 20 to contact the electrode 51 through the slit 241. To prevent current leakage, the cover 240 is made of a non-conductor or an insulator. It is preferable that the cover 240 is designed to have a dimension that does not interfere with the LD emission light. The other configurations are the same as those of the inspection device 100.

[0034] FIG. 12 is a front view illustrating the operation of probe 20 according to embodiment 2. FIG. 13 is a flowchart showing a manufacturing method for semiconductor device 50 according to embodiment 2. The manufacturing method of this embodiment differs from the manufacturing method of embodiment 1 in that after arranging the chips, cover 240 is placed on electrode 51 (step 10). The other steps are similar to those of embodiment 1. In this embodiment, when probe 20 fits into slit 241 in steps 2 and 5, inspection begins (steps 3 and 6).

[0035] According to this embodiment, it is possible to prevent the probe 20 from falling into the gap between adjacent chips. Moreover, when the probe 20 rolls, it fits into the slit 241 of the cover 240, so that it can contact the electrode 51 at any position. It is also possible to prevent the probe 20 from protruding from the LD chip.

[0036] Embodiment 3 FIG. 14 is a cross-sectional view of the inspection device 300 according to the third embodiment. The inspection device 300 includes a probe 320 and a cover 340 in which a slit 341 is formed to expose the electrode 51. The probe 320 is, for example, polygonal when viewed from the axial direction. The slit 341 has a shape corresponding to the polygonal outer shape of the probe 320. For example, as shown in FIG. 14, the slit 341 has a shape that allows a portion formed by three adjacent faces among the side faces of the probe 320 to fit into the slit 341. The other configurations are the same as those of the second embodiment. In the example of FIG. 14, the probe 320 is octagonal when viewed from the axial direction, but the probe 320 may be any polygonal shape as long as it can roll on the cover 340.

[0037] According to this embodiment, by making the probe 320 polygonal, it is possible to increase the contact area with the electrode 51. In addition, by matching the shape of the slit 341 of the cover 340 with the cross-sectional shape of the probe 320, it is possible to ensure the contact area.

[0038] In addition, if the number of corners of the probe 320 is small, it may become an obstacle when rolling. For this reason, it is preferable to give the probe 320 a shape that allows it to roll smoothly. For example, the corners of a polygon may be rounded.

[0039] Embodiment 4 Fig. 15 is a perspective view of an inspection device 400 according to the fourth embodiment. Fig. 16 is a side view of a probe 420 according to the fourth embodiment. A slit 423 is formed around the entire circumference of a side surface 421 of the probe 420. The slit 423 is formed, for example, at a position including the center of the probe 420 in the axial direction. The wiring 430 has an annular portion 433 and a conductive shaft 431 extending from the annular portion 433. The probe 420 is inserted into the annular portion 433. The annular portion 433 is disposed in the slit 423 with the probe 420 inserted therein.

[0040] In the probe 420, at least a part of the side surface 421 and the bottom of the slit 423 in which the annular portion 433 is disposed are formed of a conductor. The conductor of the side surface 421 and the conductor at the bottom of the slit 423 are electrically connected. This allows the conductor of the side surface 421 to be electrically connected to the wiring 430. As in the first embodiment, the probe 420 is configured to roll on the electrode 51 by the movement of the conductive shaft 431.

[0041] The inspection device 400 includes guide parts 442 that are provided on both sides of the probe 420 in the axial direction of the measurement target and guide the probe 420. The guide parts 442 are supported by supports 443 provided on the inspection stage 10, for example. FIG. 17 is a front view for explaining the operation of the probe 420 according to the fourth embodiment. In this embodiment, in step 3, the probe 420 is lowered between the guide parts 442 fixed to the inspection stage 10 and brought into contact with the electrode 51. That is, the probe 420 contacts the electrode 51 while being sandwiched between the guide parts 442. The probe 420 rolls between the guide parts 442 to move to the adjacent semiconductor device 50.

[0042] In order to prevent current leakage, the guide portion 442 is made of a non-conductor or an insulator. Also, the guide portion 442 has a notch 444 formed at a position corresponding to the light emission portion of the laser to be measured. This suppresses interference between the laser emission light and the guide portion 442.

[0043] 18A, 18B, 19A, and 19B are diagrams for explaining the function of the guide portion 442 according to the fourth embodiment. As shown in FIG. 18A, even if the probe 420 is tilted in a direction perpendicular to the upper surface of the semiconductor device 50, the tilt can be corrected by the guide portion 442 as shown in FIG. 18B. Also, as shown in FIG. 19A, even if the probe 420 is tilted in a direction parallel to the upper surface of the semiconductor device 50, the tilt can be corrected by the guide portion 442 as shown in FIG. 19B. In this way, by providing the guide portion 442, the probe 420 can be stably rolled even when the wiring 430 is provided at one place.

[0044] According to this embodiment, the number of wirings 430 can be reduced compared to the first embodiment. Therefore, the cost can be reduced. Furthermore, the probe 420 can be always kept parallel to the laser optical axis by rolling between the guide parts 442. Furthermore, the cutout 444 of the guide part 442 can suppress vignetting of the LD emission light.

[0045] In addition, the wiring 430 of this embodiment may also be detachable from the probe 420. For example, the annular portion 433 may be detachable from the probe 420.

[0046] Embodiment 5. FIG. 20 is a perspective view of an inspection device 500 according to the fifth embodiment. FIG. 21 is a cross-sectional view of a probe 520 according to the fifth embodiment. FIG. 22 is a side view of a probe 520 according to the fifth embodiment. In this embodiment, the configuration of the probe 520 is different from that of the fourth embodiment. Also, in the example of FIG. 20, a guide portion 442 is not provided. However, this is not limiting, and a guide portion 442 may be provided in this embodiment as well. The other configurations are the same as those of the fourth embodiment.

[0047] The probe 520 has a columnar rotor 524 and a conductor 525 covering the side surface of the rotor 524. The conductor 525 covers, for example, the entire side surface of the rotor 524. The material of the rotor 524 is not limited. The rotor 524 is preferably formed of a material having a hardness sufficient to maintain its shape when in contact with the electrode 51 so that it can roll on the electrode 51. The rotor 524 may be formed of an elastic material such as rubber or resin as long as the necessary hardness is ensured.

[0048] The conductor 525 is replaceable. The conductor 525 is formed, for example, by laminating a metal thin film on the rotating body 524. Alternatively, the conductor 525 may be formed by surface coating or pasting.

[0049] As in the fourth embodiment, the probe 520 has a slit 523 formed around the entire circumference of the side surface 521. The probe 520 is inserted into the annular portion 433 of the wiring 430. The annular portion 533 is disposed in the slit 523 with the probe 520 inserted therein. The probe 520 is configured so that the annular portion 433 can come into contact with the conductor 525. Specifically, when the conductor 525 is formed, a metal thin film is formed inside the slit 523 in addition to on the side surfaces 521 on both sides of the slit 523.

[0050] In this embodiment, the rotor 524 is made of an inexpensive material and is covered with the conductor 525. With this structure, when the surface of the probe 520 is damaged or dirty, only the conductor 525 needs to be replaced. This is expected to reduce costs. In addition, when an elastic material is used for the rotor 524, damage to the electrode 51 can be suppressed.

[0051] The technical features described in each embodiment may be used in appropriate combination. [Explanation of symbols]

[0052] 10 inspection stage, 20 probe, 20a probe, 21 side, 22 hole, 22a hole, 30 wiring, 31 conductive shaft, 32 insertion part, 32a insertion part, 32b insertion part, 50, 50a, 50b semiconductor device, 51 electrode, 55 emitted light, 60 power supply, 61 moving mechanism, 100, 200 inspection device, 240 cover, 241 slit, 300 inspection device, 320 probe, 340 cover, 341 slit, 400 inspection device, 420 probe, 421 side, 423 slit, 430 wiring, 431 conductive shaft, 433 annular part, 442 guide part, 443 support part, 444 notch, 500 inspection device, 520 probe, 521 side, 523 slit, 524 Rotating body, 525 Conductor, 533 Annular part

Claims

1. It is columnar, At least a portion of the side is made of a conductive material, A probe characterized in that it rolls and moves over a measurement target, which is an LD chip, in a direction intersecting the laser optical axis of the LD chip, and the conductive material on its side comes into contact with the electrode of the measurement target.

2. The probe according to claim 1, characterized in that it is cylindrical or prismatic in shape.

3. Columnar in shape, At least a portion of the side is made of a conductive material, The device is configured to roll and move over the object to be measured, with the conductive material on its side contacting the electrode of the object to be measured. The probe is characterized in that its axial length is set so as not to interfere with the emitted light of the laser being measured.

4. The aforementioned probe comprises a columnar rotating body and The conductive material covering the side surface of the rotating body, It has, The probe according to any one of claims 1 to 3, characterized in that the conductor is provided in a replaceable manner.

5. A probe according to any one of claims 1 to 3, A wiring that is electrically connected to the conductor and configured to supply current to the probe, An inspection device characterized by being equipped with the following features.

6. The probe has a hole that extends in the axial direction of the probe. The aforementioned wiring is An insertion part that is inserted into the aforementioned hole and electrically connected to the conductor, A conductive shaft extending from the insertion portion to the outside of the probe, The inspection apparatus according to claim 5, characterized by having the following features.

7. The inspection apparatus according to claim 6, characterized in that the probe is configured to roll over the electrode as the conductive shaft moves.

8. A probe that is columnar in shape, with at least a portion of its side surface formed of a conductor, and configured to roll and move over a object to be measured so that the conductor on the side surface comes into contact with the electrode of the object to be measured, A wiring that is electrically connected to the conductor and configured to supply current to the probe, Equipped with, The probe has a hole that extends in the axial direction of the probe. The wiring comprises an insertion portion that is inserted into the hole and electrically connected to the conductor, and a conductive shaft that extends from the insertion portion to the outside of the probe. The inspection device is characterized in that the conductive shaft is extendable and retractable.

9. A probe that is columnar in shape, with at least a portion of its side surface formed of a conductor, and configured to roll and move over a target to be measured, so that the conductor on the side surface comes into contact with the electrode of the target to be measured, A wiring that is electrically connected to the conductor and configured to supply current to the probe, Equipped with, The probe has a hole that extends in the axial direction of the probe. The wiring comprises an insertion portion that is inserted into the hole and electrically connected to the conductor, and a conductive shaft that extends from the insertion portion to the outside of the probe. An inspection device characterized in that the cross-sectional shape of the insertion portion and the cross-sectional shape of the hole are polygonal.

10. A probe that is columnar in shape, with at least a portion of its side surface formed of a conductor, and configured to roll and move over a object to be measured so that the conductor on the side surface comes into contact with the electrode of the object to be measured, A wiring that is electrically connected to the conductor and configured to supply current to the probe, Equipped with, The probe has a hole that extends in the axial direction of the probe. The wiring comprises an insertion portion that is inserted into the hole and electrically connected to the conductor, and a conductive shaft that extends from the insertion portion to the outside of the probe. An inspection device characterized in that the side surface of the insertion portion is provided with irregularities.

11. A probe that is columnar in shape, with at least a portion of its side surface formed of a conductor, and configured to roll and move over a target to be measured, with the conductor on the side surface in contact with the electrode of the target to be measured, A wiring that is electrically connected to the conductor and configured to supply current to the probe, A cover provided on the electrode and having a first slit formed therein that exposes the electrode, Equipped with, The inspection apparatus is characterized in that the first slit has a shape that allows the probe to contact the electrode through the first slit.

12. The aforementioned probe is polygonal when viewed from the axial direction, The inspection apparatus according to claim 11, characterized in that the first slit has a shape corresponding to the polygon.

13. A probe that is columnar in shape, with at least a portion of its side surface formed of a conductor, and configured to roll over a object to be measured so that the conductor on the side surface comes into contact with the electrode of the object to be measured, A wiring that is electrically connected to the conductor and configured to supply current to the probe, Equipped with, The probe has a second slit formed around the entire circumference of the side surface. The aforementioned wiring is With the probe inserted, the annular portion is positioned in the second slit, A conductive shaft extending from the annular portion, An inspection device characterized by having the following features.

14. The inspection apparatus according to claim 13, characterized in that the probe is configured to roll over the electrode as the conductive shaft moves.

15. The inspection apparatus according to claim 13 or 14, characterized in that it includes guide portions provided on both sides of the probe in the axial direction among the objects to be measured, for guiding the probe.

16. The inspection apparatus according to claim 15, characterized in that the guide portion has a notch formed at a position corresponding to the light emission portion of the laser that is to be measured.

17. The inspection apparatus according to claim 5, characterized in that the probe and the wiring are detachably provided.

18. The columnar probe, with at least a portion of its side formed of a conductive material, is brought into contact with a semiconductor device which is an LD chip. With the side surface of the probe in contact with the semiconductor device, the probe is rolled and moved on the semiconductor device in a direction intersecting the laser optical axis of the LD chip, so that the conductive material on the side surface comes into contact with the electrode of the semiconductor device. A method for manufacturing a semiconductor device, characterized by performing an inspection of the semiconductor device while the conductor is in contact with the electrode.

19. Arrange the multiple semiconductor devices in the direction of movement of the probe, The method for manufacturing a semiconductor device according to claim 18, characterized in that the probe is rolled and moved across the plurality of semiconductor devices arranged in the direction of movement to inspect the plurality of semiconductor devices.

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