Plasma processing apparatus and monitoring device

Abstract

The present disclosure provides a technology for shortening the time from the occurrence of an abnormality in a plasma processing space of a plasma processing device until the power supply to the plasma processing space is stopped. A plasma processing device that processes using plasma in a plasma processing space comprises: a device-side controller unit that controls processing performed in the plasma processing space; a high-frequency power generation unit that supplies power to the plasma processing space; and a monitoring unit that monitors monitoring target information transmitted from a monitoring target to the device-side controller unit, detects an abnormality in the plasma processing space based on the monitoring target information, and controls the high-frequency power generation unit to stop the power supply from the high-frequency power generation unit to the plasma processing space where the abnormality was detected. The device-side controller unit sets the monitoring target to be monitored by the monitoring unit and sets the timing for monitoring the monitoring target information to the monitoring unit.

Description

Technology Field

[0001] The present disclosure relates to a plasma processing device and a monitoring device. Background Technology

[0002] A monitoring device and a monitoring method for detecting the occurrence of abnormal discharge in a plasma processing device are known in the past (see, for example, Patent Document 1). In addition, a device for suppressing abnormal discharge in a vacuum device that generates plasma by supplying power into a plasma reaction chamber from a high-frequency power source is also known in the past (see, for example, Patent Document 2). Prior art literature

[0003] Japanese Patent Publication No. JP 2003-234332, International Patent Publication No. 2009 / 118920 The problem to be solved

[0004] The present disclosure provides a technology that reduces the time from the occurrence of an anomaly in the chamber of a plasma processing device to the control of a monitored target. means of solving the problem

[0005] One aspect of the present disclosure is a plasma processing apparatus comprising a chamber, a device-side controller unit for controlling plasma processing within the chamber, and a monitoring unit for monitoring a monitoring target provided within the chamber or directly or indirectly connected to the chamber, wherein the device-side controller unit sets the monitoring target and sets the timing for acquiring monitoring target information, and the monitoring unit acquires the monitoring target information transmitted from the monitoring target to the device-side controller unit, detects an abnormality in the chamber based on the monitoring target information, and controls the monitoring target with respect to the chamber where the abnormality occurred. Effects of the invention

[0006] According to the present disclosure, the time from the occurrence of an abnormality in the chamber of a plasma processing device to the control of a monitored object can be shortened. Brief explanation of the drawing

[0007] FIG. 1 is a configuration diagram of an example of a semiconductor manufacturing system according to the present embodiment. FIG. 2 is a configuration diagram of an example of a plasma processing system according to the present embodiment. FIG. 3 is a configuration diagram of an example of a plasma processing device according to the present embodiment. Figure 4 is a hardware configuration diagram of an example of a monitoring board. Figure 5 is a diagram illustrating an example of a connection between a device-side controller, a monitoring board, and a client of a control network. Figure 6 is a functional block diagram of an example of an SoC. FIG. 7 is a flowchart of an example showing the operation of a monitoring board according to the present embodiment. Figure 8 is a diagram of an example to explain the timing for detecting abnormal discharge occurrence on a monitoring board. Specific details for implementing the invention

[0008] Hereinafter, a form for implementing the present disclosure is described with reference to the drawings. A plasma processing apparatus according to the present embodiment is used in semiconductor manufacturing processes such as film deposition, etching, and ashing. In plasma processing, high-frequency power is supplied from a high-frequency power source into a vacuum chamber (processing chamber) to plasmafy a processing gas and react it on the surface of a substrate to be processed to perform the desired processing. The plasma processing apparatus is used, for example, in manufacturing processes for semiconductor devices or liquid crystal panels.

[0009] In a plasma processing device that processes using plasma, abnormalities such as abnormal discharge occur in the plasma processing space due to various factors. When an abnormality occurs, the substrate to be processed in the plasma processing device may become defective. Accordingly, in the plasma processing device according to the present embodiment, the time from when an abnormality occurs in the plasma processing space until the power supply to the plasma processing space is stopped (interlocked) is shortened as follows. For example, a film deposition device and an etching device are examples of a plasma processing device.

[0010] <System Configuration>

[0011] FIG. 1 is a configuration diagram of an example of a semiconductor manufacturing system according to the present embodiment. The semiconductor manufacturing system (1) of FIG. 1 is configured such that a host computer (2) and one or more plasma processing systems (3) are connected through a network (4) capable of data communication, such as a LAN (Local Area Network).

[0012] The host computer (2) is an example of a Man-Machine Interface (MMI) that provides information regarding the plasma processing system (3) to a worker, which is an example of a user. The host computer (2) receives parameter settings from the worker. The host computer (2) receives recipe settings, such as processing recipes, maintenance recipes, and allowable recipes, from the worker. The host computer (2) provides parameter settings, recipe settings, etc., to the plasma processing system (3).

[0013] The plasma processing system (3), in response to a request for work execution from the host computer (2), transports a substrate to be processed to a plasma processing space where a desired processing is performed using plasma, and performs a desired processing (film deposition, etching, ashing, etc.) using plasma in the plasma processing space.

[0014] In addition, the semiconductor manufacturing system (1) of FIG. 1 is just one example, and it goes without saying that there are various system configuration examples depending on the use or purpose. The distinction between devices such as the host computer (2) and the plasma processing system (3) of FIG. 1 is just one example.

[0015] For example, the semiconductor manufacturing system (1) can have various configurations, such as an integrated configuration or a divided configuration, in which the host computer (2) and the plasma processing system (3) are integrated. The host computer (2) may be configured to handle multiple plasma processing systems (3) in a collective manner, as in the semiconductor manufacturing system (1) of FIG. 1, or it may be provided in a one-to-one manner with the plasma processing system (3).

[0016] Configuration of the Plasma Processing System

[0017] In one embodiment, the plasma processing system (3) includes a plasma processing device (5), a control unit (6), and a monitoring unit (7). The plasma processing device (5) includes a plasma processing chamber (10), a substrate support unit (11), and a plasma generation unit (12). The plasma processing chamber (10) has a plasma processing space. Additionally, the plasma processing chamber (10) has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit (20) described later, and the gas discharge port is connected to an exhaust system (40) described later. The substrate support unit (11) is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0018] The plasma generation unit (12) is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron resonance plasma (ECR), a helicon wave excited plasma (HWP), a surface wave plasma (SWP), etc. Additionally, various types of plasma generation units, including an alternating current (AC) plasma generation unit and a direct current (DC) plasma generation unit, may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0019] The control unit (6) processes computer-executable commands that cause the plasma processing device (5) to execute the various processes described in the present disclosure. The control unit (6) may be configured to control each element of the plasma processing device (5) by executing the various processes described herein. In one embodiment, part or all of the control unit (6) may be included in the plasma processing device (5). The control unit (6) may include, for example, a computer (6a). The computer (6a) may include, for example, a central processing unit (CPU, 6a1), a memory unit (6a2), and a communication interface (6a3). The central processing unit (6a1) may be configured to execute various control operations according to a program stored in the memory unit (6a2). The memory unit (6a2) may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface (6a3) can communicate with the plasma processing device (5) via a communication line such as a LAN (Local Area Network). Additionally, the communication interface (6a3) is equipped with a control network master (105) and a communication port (106) for communication within the device, which will be described later. The control network master (105) is a master communication unit of a control network, such as a Device Net Master. A control network is an example of a network that enables communication between a host, such as a control unit (6), and a client, such as a power supply (30) or a flow rate control unit (22). Additionally, the communication port (106) for communication within the device is an example of a communication port that enables communication between the control unit (6) and the monitoring unit (7).

[0020] Below, an example of a configuration of a capacitively coupled plasma treatment device is described as an example of a plasma treatment device (5).

[0021] The capacitively coupled plasma processing device (5) includes a plasma processing chamber (10), a gas supply unit (20), a power supply (30), and an exhaust system (40). Additionally, the plasma processing device (1) includes a substrate support (11) and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber (10). The gas introduction unit includes a shower head (13). The substrate support (11) is positioned within the plasma processing chamber (10). The shower head (13) is positioned above the substrate support (11). In one embodiment, the shower head (13) constitutes at least a portion of the ceiling of the plasma processing chamber (10). The plasma processing chamber (10) has a plasma processing space (10s) partitioned by the shower head (13), the side wall (10a) of the plasma processing chamber (10), and the substrate support (11). The side wall (10a) is grounded. The shower head (13) and the substrate support (11) are electrically insulated from the plasma treatment chamber (10) case.

[0022] The substrate support portion (11) includes a main body portion (111) and a ring assembly (112). The main body portion (111) has a central region (substrate support surface, 111a) for supporting a substrate (wafer, W) and an annular region (ring support surface, 111b) for supporting a ring assembly (112). The annular region (111b) of the main body portion (111) surrounds the central region (111a) of the main body portion (111) when viewed in a planar view. The substrate (W) is placed on the central region (111a) of the main body portion (111), and the ring assembly (112) is placed on the annular region (111b) of the main body portion (111) to surround the substrate (W) on the central region (111a) of the main body portion (111). In one embodiment, the main body portion (111) includes a base table and an electrostatic chuck. The base table includes a conductive member. The conductive member of the base table functions as a lower electrode. An electrostatic chuck is placed on the base table. The upper surface of the electrostatic chuck has a substrate support surface (111a). The ring assembly (112) includes one or more annular members. At least one of the one or more annular members is an edge ring. Additionally, the substrate support (11) may include a temperature control module (not shown) configured to control at least one of the electrostatic chuck, the ring assembly (112), and the substrate (W) to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path. Additionally, the substrate support (11) may include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate (W) and the substrate support surface (111a).

[0023] The shower head (13) is configured to introduce at least one processing gas from the gas supply unit (20) into the plasma processing space (10s). The shower head (13) has at least one gas supply port (13a), at least one gas diffusion chamber (13b), and a plurality of gas inlet ports (13c). The processing gas supplied through the gas supply port (13a) passes through the gas diffusion chamber (13b) and is introduced into the plasma processing space (10s) through the plurality of gas inlet ports (13c). Additionally, the shower head (13) includes a conductive member. The conductive member of the shower head (13) functions as an upper electrode. Meanwhile, the gas inlet port may include, in addition to the shower head (13), one or more side gas injectors (SGI) mounted in one or more openings formed in the side wall (10a).

[0024] The gas supply unit (20) may include at least one gas source (21, gas source) and at least one flow control unit (22). In one embodiment, the gas supply unit (20) is configured to supply at least one processing gas from each corresponding gas source (21) through each corresponding flow control unit (22) to the shower head (13). Each flow control unit (22) may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit (20) may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0025] The power supply (30) includes an RF power supply (31) coupled to the plasma processing chamber (10) with at least one impedance matching circuit in between. The RF power supply (31) is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support (11) and / or a conductive member of the shower head (13). Thus, plasma is formed from at least one processing gas supplied to the plasma processing space (10s). Accordingly, the RF power supply (31) can function as at least part of the plasma generation unit (12). Additionally, by supplying the bias RF signal to the conductive member of the substrate support (11), a bias potential is generated in the substrate (W), thereby attracting the ionic components in the formed plasma toward the substrate (W).

[0026] In one embodiment, the RF power supply (31) includes a first RF generating unit (31a) and a second RF generating unit (31b). The first RF generating unit (31a) is configured to generate a source RF signal (source RF power) for plasma generation by being coupled to a conductive member of the substrate support (11) and / or a conductive member of the shower head (13) with at least one impedance matching circuit in between. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit (31a) may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to a conductive member of the substrate support (11) and / or a conductive member of the shower head (13). The second RF generating unit (31b) is configured to generate a bias RF signal (bias RF power) by being coupled to a conductive member of the substrate support (11) with at least one impedance matching circuit in between. In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit (31b) may be configured to generate a plurality of bias RF signals having different frequencies. One or more of the generated bias RF signals are supplied to a conductive member of the substrate support (11). Additionally, in several embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0027] Additionally, the power supply (30) may include a DC power supply (32) coupled to the plasma processing chamber (10). The DC power supply (32) includes a first DC generating unit (32a) and a second DC generating unit (32b). In one embodiment, the first DC generating unit (32a) is connected to a conductive member of the substrate support (11) and configured to generate a first DC signal. The generated first DC signal is applied to the conductive member of the substrate support (11). In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generating unit (32b) is connected to a conductive member of the shower head (13) and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the shower head (13). In several embodiments, the first and second DC signals may be pulsed. Meanwhile, the first and second DC generating units (32a, 32b) may be provided in addition to the RF power source (31), and the first DC generating unit (32a) may be provided instead of the second RF generating unit (31b).

[0028] The exhaust system (40) may be connected, for example, to a gas outlet (10e) provided at the bottom of the plasma processing chamber (10). The exhaust system (40) may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space (10s) is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0029] The monitoring unit (7) is realized by, for example, a monitoring board (70) with the configuration shown in FIG. 4. The monitoring board (70) is, for example, a computer with the configuration shown in FIG. 4, and monitors the monitoring target information (e.g., reflected power) of the monitoring target (e.g., power supply (30)) as described below, and when the monitoring target information matches a set condition (e.g., that the reflected power is above a threshold), it executes a set process (e.g., control to stop power supply to the plasma processing space).

[0030] FIG. 4 is a hardware configuration diagram of an example of a monitoring board. The monitoring board (70) of FIG. 4 is equipped with a System on Chip (SoC, 201), an Electrically Erasable Programmable RPM (EEPROM, 202), a Light Emitting Diode (LED, 203), a power module (204), a network transceiver for control (205), a transceiver for communication within the device (206), and a digital input / output module (207).

[0031] The SoC (201) has a CPU (211), RAM (212), and ROM (213) built in. The EEPROM (202) is an example of non-volatile memory. The CPU (211) uses the RAM (212) as a work area and executes the processing of the monitoring board (70) described later based on programs and data read from the ROM (213) or EEPROM (202).

[0032] The power module (204) supplies power to the SoC (201). The control network transceiver (205) receives data transmitted between a client and a host in a control network, such as a Device net master. The in-device communication transceiver (206) is an example of a communication transceiver that connects the control unit (6) and the monitoring board (70) in a communication-enabled state. The digital input / output module (207) is an example of a communication board that outputs digital signals to a client, such as a power supply (30) or a flow control unit (22).

[0033] The LED (203) indicates the status of the monitoring board (70) by turning on, blinking, or turning off. For example, the LED (203) indicates the status when the CPU (211) is started, when setting data is written or read, when an error occurs, etc.

[0034] Meanwhile, the connection between the client of the control network, such as the power supply (30) and flow control unit (22) shown in FIG. 2, the device-side controller (60), which is an example of a control unit (6), and the monitoring board (70) is configured as shown in FIG. 5, for example.

[0035] FIG. 5 is a diagram illustrating an example of the connection between a device-side controller, a monitoring board, and a client of a control network. Meanwhile, in FIG. 5, configurations not used in the description herein are omitted.

[0036] The device-side controller (60) of the control network is equipped with a CPU (101) on the upper side and a control network master (105) and a communication port (106) for communication within the device on the lower side. The device-side controller (60) performs data transmission by polling with clients such as the power supply (30) and the flow rate control unit (22) using the control network master (105). The upper-side CPU (101) of the device-side controller (60) acquires data transmitted from clients such as the power supply (30) and the flow rate control unit (22) by polling with the lower-side control network master (105).

[0037] Although the city is omitted in Fig. 5, the CPU (101) of the device controller (60) has many polling targets. Therefore, the polling period between the CPU (101) and the control network master (105) is longer than the polling period between the control network master (105) and clients such as the power supply (30) and the flow controller (22).

[0038] For example, in order to detect the occurrence of an abnormality, such as an abnormal discharge in a plasma processing space and stop the power supply to the plasma processing space, it is necessary to determine whether an abnormality, such as an abnormal discharge, has occurred from data (monitoring target information) obtainable by polling from a monitored client, such as a power source (30). For example, if an abnormal discharge occurs, the impedance of the plasma processing space changes, and the reflected power reflected to a client, such as a power source (30), increases. Thus, the occurrence of an abnormal discharge in the plasma processing space can be detected by monitoring the reflected power. In this embodiment, the monitored client, such as a power source (30), is configured to have a reflected power measurement function. The client, such as a power source (30), may also utilize a reflected power measurement function possessed by something other than the client.

[0039] When the CPU (101) of the device-side controller (60) detects the occurrence of an abnormal discharge in the plasma processing space, the CPU (101) recognizes the reflected power through a polling cycle with the control network master (105). In this way, when the CPU (101) of the device-side controller (60) detects the occurrence of an abnormal discharge in the plasma processing space, the occurrence of an abnormal discharge in the plasma processing space is detected through a polling cycle between the CPU (101) and the control network master (105).

[0040] Meanwhile, the polling period between the control network master (105) and the monitored client, such as the power supply (30), is shorter than the polling period between the CPU (101) and the control network master (105).

[0041] Thus, in this embodiment, a monitoring board (70) is installed at a location where information (reflected power information) representing the value of reflected power transmitted by polling between a client subject to monitoring, such as a power source (30), and a host, a control network master (105), in a control network is received. Meanwhile, the reflected power information is an example of the information subject to monitoring.

[0042] Since the monitoring board (70) can receive data transmitted between the client and the host in the control network, it can receive reflected power information faster than the CPU (101) of the device-side controller (60) by the difference in the polling period. Thus, the monitoring board (70) recognizes the reflected power by the polling period between the client and the host, and can detect the occurrence of abnormal discharge in the plasma processing space faster than the CPU (101) of the device-side controller (60).

[0043] The SoC (201) detects abnormal occurrences, such as abnormal discharge in the plasma processing space, based on monitoring target information, such as reflected power information received by the control network transceiver (205), as described below. The monitoring target of the monitoring board (70), the value of the monitoring target which is the monitoring target information, the monitoring timing, and the threshold for detecting abnormal occurrences in the plasma processing space based on the value of the monitoring target are set between the communication port (106) for in-device communication of the device-side controller (60) and the device-side communication transceiver (206) of the monitoring board (70). For example, when detecting abnormal discharge occurrences in the plasma processing space based on reflected power information, the monitoring timing is set to exclude timings where abnormal discharge occurrences do not need to be detected, such as the timing when the value of the reflected power increases due to factors other than the occurrence of abnormal discharge.

[0044] The SoC (201) monitors the value of the monitored target at a set monitoring timing, and if it meets the condition, controls the monitored target through the digital input / output module (207). For example, if the value of the reflected power recognized at the set monitoring timing is above the threshold, the SoC (201) controls the power supply (30) that is the monitored target through the digital input / output module (207) to stop the power supply from the power supply (30) to the plasma processing space. Additionally, the SoC (201) may monitor the value of the monitored target at a set monitoring timing, and if it meets the condition, may perform log information communication before and after the timing that meets the condition between the device-side controller (60)'s device-side communication port (106) and the device-side communication transceiver (206) of the monitoring board (70).

[0045] Meanwhile, as shown in FIG. 5, the control network master (105) of the device-side controller (60) and the control network transceiver (205) of the monitoring board (70) are connected through a control network, which is an example of a first communication means. Additionally, the communication port (106) for in-device communication of the device-side controller (60) and the in-device communication transceiver (206) of the monitoring board (70) are connected through a communication network, which is an example of a second communication means different from the first communication means. In the control network, a load is always generated by polling communication. Therefore, the device-side controller (60) prevents an increase in the amount of communication traffic on the control network side by setting the monitoring target of the monitoring board (70), the value of the monitoring target which is the monitoring target information, the monitoring timing, etc., for the monitoring board (70) through a communication network, which is an example of a second communication means.

[0046] FIG. 6 is a functional block diagram of an example of an SoC. The SoC (201) has a polling data receiving unit (301), a monitoring target determination unit (302), a monitoring timing determination unit (303), an anomaly occurrence determination unit (304), an interlock execution unit (305), and a log information output unit (306). Here, the illustration and description of functions of the SoC (201) that are not used in the description of this embodiment are omitted.

[0047] The polling data receiving unit (301) receives polling data transmitted between the control network master (105) of the device-side controller (60) and clients such as the power supply (30) and the flow controller (22). The monitoring target determination unit (302) determines whether the polling data received by the polling data receiving unit (301) is polling data from a monitoring target client. The monitoring timing determination unit (303) determines whether it is the timing to monitor the polling data from the monitoring target client.

[0048] The abnormal occurrence determination unit (304) detects the occurrence of an abnormality based on the polling data if the polling data received by the polling data receiving unit (301) is polling data from a client to be monitored and the timing is for monitoring the polling data.

[0049] For example, the abnormal occurrence determination unit (304) detects the occurrence of an abnormal discharge based on the reflected power value when the received polling data is the value of the reflected power polled from the power source (30) that is being monitored, and the timing is for monitoring the reflected power value of the polling data.

[0050] The interlock execution unit (305) executes an interlock for, for example, a plasma processing device (5) when the abnormal occurrence determination unit (304) detects the occurrence of an abnormality. For example, the interlock execution unit (305) executes an interlock to stop the power supply to the plasma processing space when the abnormal occurrence determination unit (304) detects the occurrence of an abnormal discharge. The log information output unit (306) outputs log information before and after the timing of the detection of the abnormality to the device-side controller (60) via the device-side communication transceiver (206) when the abnormal occurrence determination unit (304) detects the occurrence of an abnormality.

[0051] <Operation of the monitoring board>

[0052] Next, the operation of the monitoring board (70) will be briefly explained. FIG. 7 is a flowchart of an example showing the operation of the monitoring board according to the present embodiment.

[0053] The monitoring board (70) repeats the processing of step S10 until it receives polling data transmitted between the control network master (105) of the device-side controller (60) and clients such as the power supply (30) and the flow control unit (22).

[0054] When receiving polling data transmitted between the control network master (105) of the device-side controller (60) and the client, the monitoring board (70) in step S12 determines whether the polling data is a monitoring target. If the monitoring board (70) determines that the polling data is not a monitoring target, it returns to the processing of step S10.

[0055] The monitoring board (70) executes the processing of step S14 if it is polling data of the monitored target. In step S14, the monitoring board (70) determines whether it is the timing to monitor polling data from the monitored client. If the monitoring board (70) is not the timing to monitor polling data from the monitored client, it returns to the processing of step S10.

[0056] The monitoring board (70) executes the processing of step S16 when it is time to monitor polling data from the client being monitored. In step S16, the monitoring board (70) compares the value of the target being monitored (e.g., reflected power) included in the polling data with a threshold.

[0057] In step S18, the monitoring board (70) determines that no abnormality has occurred if the value of the monitored target included in the polling data is not above the threshold, and returns to the processing of step S10. The monitoring board (70) determines that an abnormality has occurred if the value of the monitored target included in the polling data is above the threshold. For example, the monitoring board (70) determines that an abnormal discharge has occurred if the reflected power value of the monitored target included in the polling data is above the threshold.

[0058] If it is determined that an abnormality has occurred, the monitoring board (70) executes an interlock for the plasma processing device (5) in step S20. For example, if the monitoring board (70) detects the occurrence of an abnormal discharge, it controls the power supply (30) under monitoring to stop the power supply to the plasma processing space.

[0059] In step S22, the monitoring board (70) outputs log information before and after the timing of detecting the occurrence of an anomaly to the device-side controller (60) through the device-side communication transceiver (206).

[0060] For example, when the CPU (101) of the device controller (60) detects the occurrence of an abnormal discharge in the plasma processing space and when the monitoring board (70) detects the occurrence of an abnormal discharge in the plasma processing space, the timing of detecting the occurrence of the abnormal discharge is different from that shown in FIG. 8.

[0061] FIG. 8 is an example diagram illustrating the timing for detecting abnormal discharge occurrence on a monitoring board. In FIG. 8, the plot marked with a large circle represents the reflected power value for each period (device-side controller sampling period) during which the CPU (101) of the device-side controller (60) can recognize the reflected power. Also, in FIG. 8, the plot marked with a small dot represents the reflected power value for each period (monitoring board sampling period) during which the monitoring board (70) can recognize the reflected power.

[0062] As shown in the plot of the monitoring board sampling period of FIG. 8, the monitoring board (70) can recognize that the reflected power has become above the threshold immediately after the reflected power has exceeded the threshold.

[0063] On the other hand, as shown in the plot of the device-side controller sampling period of FIG. 8, the CPU (101) of the device-side controller (60) cannot recognize that the reflected power has exceeded the threshold until about 80 msec has passed since the reflected power exceeded the threshold.

[0064] In this way, according to the monitoring board (70) of the present embodiment, the CPU (101) of the device controller (60) can execute the interlock in a shorter time than the time it takes to execute the interlock.

[0065] For example, the monitoring board (70) according to the present embodiment can detect the occurrence of an abnormal discharge in the plasma processing space faster than the CPU (101) of the device-side controller (60) when the value of the monitored object is the reflected power of the power supply (30). Thus, for example, the monitoring board (70) according to the present embodiment can shorten the time from the occurrence of an abnormal discharge in the plasma processing space to the stopping of power supply to the plasma processing space when the value of the monitored object is the reflected power of the power supply (30).

[0066] In addition, for example, the monitoring board (70) according to the present embodiment can detect an abnormality in the processing gas in the plasma processing space faster than the CPU (101) of the device-side controller (60) when the value of the monitoring target is the gas concentration of the plasma processing space. Thus, for example, when the value of the monitoring target is the gas concentration of the plasma processing space, the monitoring board (70) according to the present embodiment can shorten the time from when an abnormality in the processing gas in the plasma processing space occurs until the flow rate of the processing gas supplied to the plasma processing space is adjusted.

[0067] In addition, the values ​​to be monitored are not limited to reflected power and gas concentration, and may also include back pressure values ​​such as helium for detecting wafer adsorption abnormalities, current values ​​of the high-voltage power supply (HV) of the electrostatic chuck (ESC) for detecting wafer adsorption abnormalities, and plasma emission spectroscopic (OES) values ​​for detecting plasma abnormalities.

[0068] Although preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the aforementioned embodiments, and various modifications and substitutions can be made to the aforementioned embodiments without departing from the scope of the present invention.

[0069] The present invention claims priority based on patent application No. 2021-019646 filed with the Japan Patent Office on February 10, 2021, the entire contents of which are incorporated herein by reference.

[0070] [bookkeeping]

[0071] <Booklet 1>

[0072] As a plasma processing device,

[0073] chamber and,

[0074] A controller unit on the device side that controls plasma processing within the above chamber, and

[0075] It includes a monitoring unit that monitors a monitoring target provided within the chamber or directly or indirectly connected to the chamber, and

[0076] The controller unit on the device side sets the monitoring target and sets the timing for acquiring monitoring target information, and

[0077] A plasma processing apparatus characterized in that the monitoring unit acquires monitoring target information transmitted from the monitoring target to the device-side controller unit, detects an abnormality in the chamber based on the monitoring target information, and controls the monitoring target with respect to the chamber where the abnormality occurred.

[0078] Booklet 2

[0079] The above-mentioned monitoring target is a high-frequency power source that supplies power to the chamber, and

[0080] A plasma processing device of Appendix 1, wherein the monitoring unit controls the high-frequency power supply to change the power supply to the chamber where the abnormality occurred.

[0081] Book 3

[0082] A plasma processing device of Appendix 2, wherein the change in the power supply above includes the cessation of power supply to the chamber where the above abnormality occurred.

[0083] delete

[0084] delete

[0085] delete

[0086] delete

[0087] delete

[0088] Book 6

[0089] The above-mentioned monitoring target is a flow control unit that controls the flow rate of gas supplied to the chamber, and

[0090] A plasma processing apparatus of Appendix 1, wherein the monitoring unit controls the flow control unit to change the gas flow rate for the chamber where the abnormality occurred.

[0091] Book 7

[0092] As a plasma processing device,

[0093] chamber and,

[0094] A controller unit on the device side that controls plasma processing within the above chamber, and

[0095] A high-frequency power source that supplies power to the chamber above, and

[0096] It includes a monitoring unit that acquires monitoring target information transmitted from a monitoring target to a controller unit on the device side, detects an abnormality in the chamber based on the monitoring target information, and controls the high-frequency power supply to stop the power supply to the chamber where the abnormality occurred.

[0097] A plasma processing device characterized in that the above-mentioned device-side controller unit performs the setting of the monitoring target and the setting of the timing for acquiring the monitoring target information with respect to the monitoring unit.

[0098] Book 8

[0099] A plasma processing apparatus according to Appendix 7, characterized in that the device-side controller unit sets a threshold for the monitoring unit to detect an abnormal occurrence in the chamber based on the monitoring target information.

[0100] Bookmark 9

[0101] The above-mentioned device-side controller, the above-mentioned monitoring target, and the above-mentioned monitoring unit are connected by a first communication means that performs data transmission by polling, and

[0102] The controller unit on the device side and the monitoring unit are connected to enable data communication by a second communication means different from the first communication means, and

[0103] A plasma processing device according to Appendix 8, characterized in that the device-side controller unit uses the second communication means to set the monitoring target, set the timing for acquiring the monitoring target information, and set the threshold for the monitoring unit.

[0104] Bookmark 10

[0105] The above-mentioned first communication means performs communication using the master communication unit and the client communication unit of the control network, and

[0106] The above device-side controller unit includes the above master communication unit,

[0107] Each of the above monitoring target and the above monitoring unit includes the above client communication unit, and

[0108] The plasma processing device of Appendix 9, characterized in that the above monitoring unit acquires the monitoring target information by a polling period in which the device-side controller unit acquires the monitoring target information from the monitoring target.

[0109] Bookmark 11

[0110] A plasma processing device of Appendix 9 or Appendix 10, characterized in that the monitoring unit provides the monitoring target information at the timing of detecting the occurrence of the above abnormality using the second communication means, and the monitoring target information at a desired time before and after the timing, as log information to the device-side controller unit.

[0111] Bookmark 12

[0112] A plasma processing apparatus according to any one of Appendix 7 to Appendix 10, characterized in that the above monitoring unit detects at least one of the following as an abnormal occurrence in the chamber: an abnormal discharge when reflected power information is the monitoring target information, an abnormal wafer adsorption when gas back pressure information is the monitoring target information, an abnormal wafer adsorption when current information of the high-voltage power supply of the electrostatic chuck is the monitoring target information, and an abnormal plasma occurrence when plasma emission spectroscopic information is the monitoring target information.

[0113] Bookmark 13

[0114] A plasma processing device according to Addendum 12, characterized in that the controller unit on the device side does not acquire the monitoring target information during the period in which an increase in reflected power is predicted by the plasma processing, but rather acquires the monitoring target information during the period in which an increase in reflected power is not predicted by the plasma processing, thereby setting the timing for acquiring the reflected power information for the monitoring unit.

[0115] Bookmark 14

[0116] It further includes a flow control unit that controls the flow rate of gas supplied into the chamber,

[0117] The monitoring unit acquires gas concentration information of the chamber transmitted from the flow control unit to the device-side controller unit, detects an abnormal occurrence of the gas in the chamber based on the gas concentration information, and controls the flow control unit to regulate the flow rate of the gas supplied to the chamber where the abnormality occurred.

[0118] A plasma processing device according to any one of Appendix 7 to Appendix 13, wherein the device-side controller unit performs, with respect to the monitoring unit, a setting of the flow rate control unit that is the monitoring target, a setting of the timing for acquiring the gas concentration information, and a setting of a threshold for detecting an abnormal occurrence of the gas.

[0119] Bookmark 15

[0120] As a monitoring device for suppressing abnormal discharge of a plasma processing device,

[0121] A setting receiving unit that receives the setting of a monitoring target and the setting of the timing for acquiring monitoring target information from the controller unit on the device side that controls plasma processing inside the chamber, and

[0122] A detection unit that acquires the monitoring target information transmitted from the monitoring target to the device-side controller unit at the timing and detects the occurrence of an abnormality in the chamber based on the monitoring target information, and

[0123] A monitoring device comprising a control unit that controls a high-frequency power supply to stop the power supply to the chamber where the above abnormality has occurred.

[0124] <Book 16>

[0125] As a plasma processing device that performs a desired processing using plasma in a plasma processing space,

[0126] A device-side controller unit that controls the processing performed in the above plasma processing space, and

[0127] A high-frequency power generation unit that supplies power to the above plasma processing space, and

[0128] It includes a monitoring unit that monitors monitoring target information transmitted from the monitoring target to the controller unit on the device side, detects an abnormal occurrence in the plasma processing space based on the monitoring target information, and controls the high-frequency power generation unit to stop the power supply from the high-frequency power generation unit to the plasma processing space where the abnormal occurrence was detected.

[0129] A plasma processing device characterized in that the above-mentioned device-side controller unit performs, for the above-mentioned monitoring unit, the setting of a monitoring target monitored by the above-mentioned monitoring unit and the setting of a timing for monitoring the monitoring target information.

[0130] <Book 17>

[0131] A plasma processing device according to Addendum 16, characterized in that the device-side controller unit sets a threshold for the monitoring unit to detect an abnormal occurrence in the plasma processing space based on the monitoring target information.

[0132] Bookmark 18

[0133] The above-mentioned device-side controller, the above-mentioned monitoring target, and the above-mentioned monitoring unit are connected by a first communication means that performs data transmission by polling, and

[0134] The controller unit on the device side and the monitoring unit are connected to enable data communication by a second communication means different from the first communication means, and

[0135] A plasma processing apparatus according to Appendix 17, characterized in that the device-side controller unit uses the second communication means to set a monitoring target monitored by the monitoring unit, set a timing for monitoring the monitoring target information, and set a threshold for detecting the occurrence of an abnormality for the monitoring unit.

[0136] Bookmark 19

[0137] The above-mentioned first communication means performs communication using the master communication unit and the client communication unit of the control network, and

[0138] The above device-side controller unit includes the above master communication unit,

[0139] Each of the above monitoring target and the above monitoring unit includes the above client communication unit,

[0140] A plasma processing device of Appendix 18, characterized in that the above monitoring unit acquires and monitors the monitoring target information by a polling cycle in which the device-side controller unit acquires the monitoring target information from the monitoring target.

[0141] Bookmark 20

[0142] A plasma processing device of Appendix 18 or Appendix 19, characterized in that the monitoring unit provides the monitoring target information at the timing of detecting the occurrence of the above abnormality using the second communication means, and the monitoring target information at a desired period before and after the timing, as log information to the device-side controller unit.

[0143] Book 21

[0144] A plasma processing apparatus according to any one of appendices 16 to 19, characterized in that the above monitoring unit detects at least one of the following as an abnormal occurrence in the plasma processing space: an abnormal discharge when reflected power information is the monitoring target information, an abnormal wafer adsorption when gas back pressure information is the monitoring target information, an abnormal wafer adsorption when current information of the high-voltage power supply of the electrostatic chuck is the monitoring target information, and a plasma abnormal occurrence when plasma emission spectroscopic information is the monitoring target information.

[0145] Book 22

[0146] A plasma processing apparatus according to Addendum 21, characterized in that the controller unit on the device side does not monitor the period during which an increase in reflected power is predicted by the processing, but monitors the period during which an increase in reflected power is not predicted by the processing, by setting the timing for monitoring the reflected power information for the monitoring unit.

[0147] Bookmark 23

[0148] It further includes a flow control unit that controls the flow rate of gas supplied to the plasma processing space,

[0149] The above monitoring unit monitors gas concentration information of the plasma processing space transmitted from the flow control unit to the device-side controller unit, detects an abnormal occurrence of the gas in the plasma processing space based on the gas concentration information, and controls the flow control unit to adjust the flow rate of the gas supplied to the plasma processing space in which the abnormal occurrence of the gas has been detected.

[0150] A plasma processing device according to any one of Appendix 16 to Appendix 22, wherein the device-side controller unit performs, for the monitoring unit, a setting of the flow rate control unit which is a monitoring target monitored by the monitoring unit, a setting of the timing for monitoring the gas concentration information, and a setting of the threshold for detecting an abnormal occurrence of the gas.

[0151] Bookmark 24

[0152] A monitoring method executed in a plasma processing device that performs a desired processing using plasma in a plasma processing space,

[0153] A device-side controller unit controlling the processing performed in the plasma processing space performs the steps of: setting a monitoring target that supplies power to the plasma processing space and setting a timing for monitoring the monitoring target information with respect to the monitoring unit;

[0154] The step of the monitoring unit monitoring the monitoring target information transmitted from the monitoring target to the device-side controller unit at the timing, and

[0155] A monitoring method comprising the step of the monitoring unit detecting an abnormal occurrence in the plasma processing space based on the monitoring target information, and controlling the high-frequency power generation unit to stop the power supply from the high-frequency power generation unit to the plasma processing space where the abnormal occurrence was detected.

[0156] Bookmark 25

[0157] As a monitoring device for suppressing abnormal discharge of a plasma processing device that performs a desired processing using plasma in a plasma processing space,

[0158] A setting receiving unit that receives, from a device-side controller unit controlling the processing performed in the plasma processing space, a setting of a monitoring target supplying power to the plasma processing space and a setting of a timing for monitoring the monitoring target information, and

[0159] A detection unit that monitors the monitoring target information transmitted from the monitoring target to the device-side controller unit at the timing and detects the occurrence of an abnormality in the plasma processing space based on the monitoring target information, and

[0160] A monitoring device comprising a control unit that controls the high-frequency power generation unit to stop the power supply from the high-frequency power generation unit to the plasma processing space upon detecting the occurrence of the above abnormality.

Claims

Claim 1 A plasma processing device comprising a chamber, a device-side controller unit for controlling plasma processing within the chamber, and a monitoring unit for monitoring a monitoring target provided within the chamber or directly or indirectly connected to the chamber, wherein the device-side controller unit performs setting of the monitoring target and setting of the timing for acquiring monitoring target information, and the monitoring unit acquires the monitoring target information transmitted from the monitoring target to the device-side controller unit, detects an abnormality in the chamber based on the monitoring target information, and controls the monitoring target with respect to the chamber where the abnormality occurred. Claim 2 A plasma processing apparatus according to claim 1, wherein the monitoring target is a high-frequency power supply that supplies power to the chamber, and the monitoring unit controls the high-frequency power supply to change the power supply to the chamber where the abnormality has occurred. Claim 3 A plasma processing device according to paragraph 2, wherein the change in the power supply includes the suspension of the power supply to the chamber where the abnormality occurred. Claim 4 delete Claim 5 delete Claim 6 A plasma processing apparatus according to claim 1, wherein the monitoring target is a flow control unit that controls the flow rate of gas supplied to the chamber, and the monitoring unit controls the flow control unit to change the flow rate of gas for the chamber where the abnormality occurred. Claim 7 A plasma processing device comprising: a chamber; a device-side controller unit for controlling plasma processing within the chamber; a high-frequency power supply for supplying power within the chamber; and a monitoring unit for acquiring monitoring target information transmitted from a monitoring target to the device-side controller unit, detecting an abnormality in the chamber based on the monitoring target information, and controlling the high-frequency power supply to stop power supply to the chamber where the abnormality occurred, wherein the device-side controller unit performs a setting of the monitoring target and a setting of the timing for acquiring the monitoring target information with respect to the monitoring unit. Claim 8 A plasma processing apparatus according to claim 7, wherein the device-side controller unit sets a threshold for the monitoring unit to detect an abnormal occurrence in the chamber based on the monitoring target information. Claim 9 A plasma processing apparatus according to claim 8, wherein the device-side controller, the monitoring target, and the monitoring unit are connected by a first communication means that performs data transmission by polling, and the device-side controller and the monitoring unit are connected to enable data communication by a second communication means different from the first communication means, and the device-side controller performs the setting of the monitoring target, the setting of the timing for acquiring the monitoring target information, and the setting of the threshold with respect to the monitoring unit using the second communication means. Claim 10 A plasma processing apparatus according to claim 9, wherein the first communication means performs communication using a master communication unit and a client communication unit of a control network, the device-side controller unit includes the master communication unit, each of the monitoring target and the monitoring unit includes the client communication unit, and the monitoring unit acquires the monitoring target information by a polling period in which the device-side controller unit acquires the monitoring target information from the monitoring target. Claim 11 A plasma processing apparatus according to claim 9 or 10, wherein the monitoring unit provides the monitoring target information at the timing of detecting the occurrence of the abnormality using the second communication means, and the monitoring target information at a desired time before or after the timing, as log information to the device-side controller unit. Claim 12 A plasma processing apparatus according to any one of claims 7 to 10, wherein the monitoring unit detects at least one of the following as an abnormal occurrence in the chamber: an abnormal discharge when reflected power information is the monitoring target information, an abnormal wafer adsorption when gas back pressure information is the monitoring target information, an abnormal wafer adsorption when current information of the high-voltage power supply of the electrostatic chuck is the monitoring target information, and an abnormal plasma occurrence when plasma emission spectroscopic information is the monitoring target information. Claim 13 A plasma processing device according to claim 12, wherein the device-side controller unit does not acquire the monitoring target information during the period in which an increase in reflected power is predicted by the plasma processing, but rather acquires the monitoring target information during the period in which an increase in reflected power is not predicted by the plasma processing, and sets the timing for acquiring the reflected power information for the monitoring unit. Claim 14 A plasma processing apparatus according to any one of claims 7 to 10, further comprising a flow control unit for controlling the flow rate of gas supplied into the chamber, wherein the monitoring unit acquires gas concentration information of the chamber transmitted from the flow control unit to the device-side controller unit, detects an abnormal occurrence of the gas in the chamber based on the gas concentration information, and controls the flow control unit to adjust the flow rate of the gas supplied to the chamber where the abnormal occurrence occurred, and wherein the device-side controller unit performs on the monitoring unit the setting of the flow control unit that is the subject of monitoring, the setting of the timing for acquiring the gas concentration information, and the setting of a threshold for detecting an abnormal occurrence of the gas. Claim 15 A monitoring device for suppressing abnormal discharge of a plasma processing device, comprising: a setting receiving unit that receives a setting of a monitoring target and a setting of a timing for acquiring monitoring target information from a device-side controller unit that controls plasma processing in a chamber; a detection unit that acquires the monitoring target information transmitted from the monitoring target to the device-side controller unit at the timing and detects an abnormal occurrence in the chamber based on the monitoring target information; and a control unit that controls a high-frequency power supply to stop power supply to the chamber where the abnormal occurred.

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