Image sensor

Abstract

An image sensor according to an embodiment of the present invention comprises a substrate having a first surface and a second surface facing each other in a first direction, wherein a plurality of unit pixels are arranged along a direction parallel to the first surface; a first photodiode and a second photodiode disposed inside the substrate in each of the plurality of unit pixels and separated from each other in a second direction perpendicular to the first direction; and a device isolation film disposed between the plurality of unit pixels, wherein a pair of pixels among the plurality of unit pixels that are arranged side by side in a third direction perpendicular to the first direction and the second direction share a microlens, and at least one of the plurality of unit pixels may include a light shielding film disposed on the upper surface of the substrate. Accordingly, in an image sensor according to an embodiment of the present invention, an autofocus function in the vertical direction can be supplemented while maintaining a conventional photodiode formation process, and furthermore, the performance of the image sensor can be improved.

Description

Technology Field

[0001] The present invention relates to an image sensor. Background Technology

[0003] An image sensor is a semiconductor-based sensor that receives light and generates electrical signals. It may include a pixel array having multiple unit pixels and circuits for driving the pixel array and generating images. Image sensors can be applied to digital image processing devices, such as cameras for capturing photos or videos, and require the detection of the focus adjustment status of the shooting lens for autofocus control. Unlike conventional digital image processing devices that included a component solely for focus detection separate from the image sensor, autofocus image sensors utilizing a phase difference detection method have recently been developed. However, there is a problem where autofocus performance in the vertical direction is relatively inferior compared to autofocus performance in the horizontal direction, so improvement is required in this regard. The problem to be solved

[0005] One of the objectives of the technical concept of the present invention is to provide an image sensor with enhanced performance that complements the autofocus function in the vertical direction by using an image sensor comprising a micro-lens extended in the vertical direction and a light shielding film. means of solving the problem

[0007] An image sensor according to one embodiment of the present invention comprises a substrate having a first surface and a second surface facing each other in a first direction, wherein a plurality of unit pixels are arranged along a direction parallel to the first surface; a first photodiode and a second photodiode disposed inside the substrate in each of the plurality of unit pixels and separated from each other in a second direction perpendicular to the first direction; and a device isolation film disposed between the plurality of unit pixels, wherein a pair of pixels among the plurality of unit pixels that are arranged side by side in a third direction perpendicular to the first direction and the second direction share a microlens, and at least one of the plurality of unit pixels includes a light shielding film disposed on the upper surface of the substrate.

[0009] An image sensor according to one embodiment of the present invention comprises a substrate having a first surface and a second surface facing each other in a first direction, wherein a plurality of unit pixels are arranged along a direction parallel to the first surface; a first photodiode and a second photodiode disposed inside the substrate in each of the plurality of unit pixels and separated from each other in a second direction perpendicular to the first direction; and a device isolation film disposed between the plurality of unit pixels, wherein a pair of pixels among the plurality of unit pixels that are arranged side by side in a third direction perpendicular to the first direction and the second direction share a plurality of microlenses arranged side by side in the second direction, and each of the plurality of microlenses is disposed on top of two of the first photodiodes or two of the second photodiodes.

[0011] An image sensor according to one embodiment of the present invention comprises a plurality of pixel groups arranged along a direction parallel to the upper surface of a substrate, wherein each of the plurality of pixel groups comprises a pixel array including at least one unit pixel and a pixel circuit for acquiring a pixel signal from the unit pixels included in the plurality of pixel groups, wherein the unit pixels are defined by a device isolation film extending in a first direction perpendicular to the upper surface of the substrate, and each of the unit pixels comprises a first photodiode and a second photodiode spaced apart from each other in a second direction perpendicular to the first direction, and a color filter disposed on a first surface of the substrate, wherein at least one of the plurality of pixel groups comprises a plurality of shielding pixels including a plurality of light-shielding films that overlap with at least a portion of the first photodiode and the second photodiode in the first direction, and the shielding pixels comprise the color filter having a different color from the unit pixels that do not include the light-shielding films. Effects of the invention

[0013] An image sensor according to one embodiment of the present invention includes a microlens shared by vertically adjacent unit pixels and a light shielding film that overlaps with a part of the microlens, thereby enabling the use of the phase difference of light incident from the vertical direction. Accordingly, the autofocus function can be supplemented in the vertical direction as well as in the horizontal direction.

[0014] The various and beneficial advantages and effects of the present invention are not limited to those described above and will be more easily understood in the process of explaining specific embodiments of the present invention. Brief explanation of the drawing

[0016] FIG. 1 is a simplified block diagram of an image sensor according to one embodiment of the present invention. FIG. 2 is a circuit diagram of a pixel array included in an image sensor according to one embodiment of the present invention. FIG. 3 is a top view of an image sensor according to one embodiment of the present invention. FIGS. 4 to 7 are cross-sectional views of an image sensor according to an embodiment of the present invention illustrated in FIG. 3. FIGS. 8 and FIGS. 9 are top views of an image sensor according to embodiments of the present invention. FIG. 10 is a top view of an image sensor according to one embodiment of the present invention. FIG. 11 is a cross-sectional view of an image sensor according to one embodiment of the present invention illustrated in FIG. 10. FIGS. 12 to 14 are top views of an image sensor according to embodiments of the present invention. FIGS. 15 and 16 are drawings for illustrating a pixel array included in an image sensor according to embodiments of the present invention. FIGS. 17 and FIGS. 18 are top views of an image sensor according to one embodiment of the present invention. FIGS. 19 to 26 are top views of an image sensor according to embodiments of the present invention. FIGS. 27 to 30 are top views of an image sensor according to embodiments of the present invention. FIG. 31 is a top view of an image sensor according to one embodiment of the present invention. FIG. 32 is a drawing for explaining a pixel array included in an image sensor according to an embodiment of the present invention. FIG. 33 is a top view of an image sensor according to one embodiment of the present invention. FIGS. 34 and FIGS. 35 are simplified drawings of an electronic device including an image sensor according to an embodiment of the present invention. Specific details for implementing the invention

[0017] Hereinafter, preferred embodiments of the present invention are described as follows with reference to the attached drawings.

[0019] FIG. 1 is a simplified block diagram of an image sensor according to one embodiment of the present invention.

[0020] Referring to FIG. 1, an image sensor (1) according to one embodiment of the present invention may include a pixel array (10) and a logic circuit (20), etc.

[0021] A pixel array (10) may include a plurality of unit pixels (PX) arranged in an array form along a plurality of rows and a plurality of columns. Each unit pixel (PX) may include at least one photoelectric conversion element that generates an electric charge in response to light, and a pixel circuit that generates a pixel signal corresponding to the electric charge generated by the photoelectric conversion element.

[0022] The photoelectric conversion element may include a photodiode formed of a semiconductor material and / or an organic photodiode formed of an organic material. In one embodiment, each unit pixel (PX) may include two or more photoelectric conversion elements, and two or more photoelectric conversion elements included in one unit pixel (PX) may receive light of different colors and generate an electric charge.

[0023] In one embodiment of the present invention, unit pixels (PX) may each include a first photodiode and a second photodiode, and the first photodiode and the second photodiode may each receive light of different wavelength bands and generate an electric charge. However, this is merely one embodiment and is not limited thereto.

[0024] According to an embodiment, the pixel circuit may include a transfer transistor, a driving transistor, a selection transistor, and a reset transistor, etc. If each of the unit pixels (PX) has two or more photoelectric conversion elements, each of the unit pixels (PX) may include a pixel circuit for processing charges generated from each of the two or more photoelectric conversion elements. For example, each of the plurality of unit pixels (PX) included in the image sensor (1) according to an embodiment of the present invention may include two photodiodes. Accordingly, the pixel circuit corresponding to each of the unit pixels (PX) may include two or more of at least some of the transfer transistor, driving transistor, selection transistor, and reset transistor. However, this is merely an embodiment and is not limited thereto, and at least some of the photoelectric conversion elements may share some of the transistors.

[0025] The logic circuit (20) may include circuits for controlling the pixel array (10). For example, the logic circuit (20) may include a row driver (21), a readout circuit (22), a column driver (23), and control logic (24), etc.

[0026] The row driver (21) can drive the pixel array (10) in row units. For example, the row driver (21) can generate a transmission control signal that controls a transmission transistor of the pixel circuit, a reset control signal that controls a reset transistor, a selection control signal that controls a selection transistor, etc., and input them to the pixel array (10) in row units.

[0027] The readout circuit (22) may include a Correlated Double Sampler (CDS), an Analog-to-Digital Converter (ADC), etc. The Correlated Double Samplers may be connected to unit pixels (PX) and column lines. The Correlated Double Samplers may perform correlated double sampling by receiving a pixel signal from a unit pixel (PX) connected to a row line selected by a row line selection signal of the row driver (21). The pixel signal may be received through the column lines. The Analog-to-Digital Converter may convert the pixel signal detected by the Correlated Double Sampler into a digital pixel signal and transmit it to the column driver (23).

[0028] The column driver (23) may include a latch or buffer circuit capable of temporarily storing a digital pixel signal and an amplification circuit, etc., and may process a digital pixel signal received from a readout circuit (22). The row driver (21), the readout circuit (22), and the column driver (23) may be controlled by control logic (24). The control logic (24) may include a timing controller, etc., for controlling the operation timing of the row driver (21), the readout circuit (22), and the column driver (23).

[0029] Among the unit pixels (PX), unit pixels (PX) placed at the same position in the horizontal direction may share the same column line. For example, unit pixels (PX) placed at the same position in the vertical direction may be simultaneously selected by the row driver (21) and may output pixel signals through the column lines. In one embodiment, the readout circuit (22) may simultaneously acquire pixel signals from the unit pixels (PX) selected by the row driver (21) through the column lines. The pixel signal may include a reset voltage and a pixel voltage, and the pixel voltage may be a voltage in which the charge generated in response to light at each of the unit pixels (PX) is reflected in the reset voltage. However, the description described with reference to FIG. 1 may not be limited thereto, and the image sensor may additionally include other components and may be driven in various ways.

[0031] FIG. 2 is a circuit diagram of a pixel array included in an image sensor according to one embodiment of the present invention.

[0032] An image sensor (1) according to one embodiment of the present invention can provide an autofocus function by using a first photodiode (PD1) and a second photodiode (PD2) separated from each other by an internal pixel separator, based on the pixel circuit shown in FIG. 2. However, the pixel circuit of the unit pixel providing the autofocus function is not necessarily limited to that shown in FIG. 2, and some components may be added or omitted as needed.

[0033] For example, unit pixels (PX) may each include a first pixel circuit that processes a charge generated in the first photodiode (PD1) and a second photodiode (PD2), together with a first photodiode (PD1) and a second pixel circuit that processes a charge generated in the second photodiode (PD2). The first pixel circuit may include a plurality of first semiconductor elements, and the second pixel circuit may include a plurality of second semiconductor elements.

[0034] The first pixel circuit may include a first transfer transistor (TX1), a reset transistor (RX), a select transistor (SX), and a driving transistor (DX). Meanwhile, the second pixel circuit may include a second transfer transistor (TX2), a reset transistor (RX), a select transistor (SX), and a driving transistor (DX). As shown in FIG. 2, the first pixel circuit and the second pixel circuit may share the reset transistor (RX), the select transistor (SX), and the driving transistor (DX). However, this is merely one embodiment and is not limited to what is shown in FIG. 2, and the first and second pixel circuits may be designed in various ways. Meanwhile, the gate electrodes of the first and second transfer transistors (TX1, TX2), the reset transistor (RX), and the select transistor (SX) may be connected to driving signal lines (TG1, TG2, RG, SG), respectively.

[0035] In one embodiment of the present invention, a first pixel circuit may generate a first electrical signal from a charge generated in a first photodiode (PD1) and output it to a first column line, and a second pixel circuit may generate a second electrical signal from a charge generated in a second photodiode (PD2) and output it to a second column line. According to one embodiment, two or more first pixel circuits arranged adjacently may share a single first column line. Similarly, two or more second pixel circuits arranged adjacently may share a single second column line. Second pixel circuits arranged adjacently may also share some of the second semiconductor elements.

[0036] A first transmission transistor (TX1) may be connected to a first transmission gate (TG1) and a first photodiode (PD1), and a second transmission transistor (TX2) may be connected to a second transmission gate (TG2) and a second photodiode (PD2). Meanwhile, the first and second transmission transistors (TX1, TX2) may share a floating diffusion region (FD). The first and second photodiodes (PD1, PD2) may generate and accumulate charge in proportion to the amount of light incident from the outside. The first and second transmission transistors (TX1, TX2) may sequentially transfer the charge accumulated in the first and second photodiodes (PD1, PD2) to the floating diffusion region (FD). To transfer the charge generated in either of the first and second photodiodes (PD1, PD2) to the floating diffusion region (FD), signals complementary to each other may be applied to the first and second transmission gates (TG1, TG2). Accordingly, the floating diffusion region (FD) can accumulate charge generated in either one of the first and second photodiodes (PD1, PD2).

[0037] The reset transistor (RX) can periodically reset the charge accumulated in the floating diffusion region (FD). For example, the electrodes of the reset transistor (RX) can be connected to the floating diffusion region (FD) and the power supply voltage (VDD). When the reset transistor (RX) is turned on, the charge accumulated in the floating diffusion region (FD) is discharged due to the potential difference with the power supply voltage (VDD), the floating diffusion region (FD) is reset, and the voltage of the floating diffusion region (FD) can become equal to the power supply voltage (VDD).

[0038] The operation of the driving transistor (DX) can be controlled according to the amount of charge accumulated in the floating diffusion region (FD). The driving transistor (DX) can function as a source-follower buffer amplifier in combination with a current source placed outside the unit pixel (PX). For example, it can amplify the potential change resulting from the accumulation of charge in the floating diffusion region (FD) and output it to the output line (Vout).

[0039] The select transistor (SX) can select unit pixels (PX) to be read row by row. When the select transistor (SX) is turned on, the electrical signal output from the driving transistor (DX) can be transmitted to the select transistor (SX).

[0040] The logic circuit (20) can provide an autofocus function using a first pixel signal obtained after the first transmission transistor (TX1) is turned on and a second pixel signal obtained after the second transmission transistor (TX2) is turned on.

[0042] FIG. 3 is a top view of an image sensor according to one embodiment of the present invention.

[0043] Referring to FIG. 3, an image sensor (100) according to one embodiment of the present invention may include first and second photodiodes (PD1, PD2), a device isolation layer (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), and microlenses (ML1, ML2). For example, the device isolation layer (DTI) may separate the plurality of unit pixels (PX1, PX2, PX3, PX4) from one another and define the unit pixels. In each of the plurality of unit pixels (PX1, PX2, PX3, PX4), the first and second photodiodes (PD1, PD2) and the microlenses (ML1, ML2) may overlap in a first direction (e.g., the z-direction). The microlenses (ML1, ML2) may be disposed at the top of each of the plurality of unit pixels (PX1, PX2, PX3, PX4) in the first direction to allow external light to be incident. The first and second photodiodes (PD1, PD2) can be separated from each other in a second direction perpendicular to the first direction (e.g., x direction). Meanwhile, although not shown in FIG. 3, the image sensor (100) may further include an internal element isolation film for defining the first and second photodiodes (PD1, PD2) between the first and second photodiodes (PD1, PD2).

[0044] Generally, an image sensor in which a single unit pixel contains two photodiodes can detect the phase difference between two divided lights by splitting external light incident through a microlens to photodiodes positioned at equal distances apart. For example, the phase difference between the two lights may correspond to a phase difference in the left-right direction. Meanwhile, the image sensor can perform autofocus operations by moving the microlens based on the detection result. Considering the structure of the image sensor regarding the arrangement of photodiodes, the ability to detect the phase difference of light in the up-down direction may be inferior compared to the ability to detect the phase difference of light in the left-right direction. In other words, the autofocus performance of the image sensor in the up-down direction may be problematic.

[0045] An image sensor (100) according to one embodiment of the present invention may further include a second microlens (ML2) having a shape modified from a first microlens (ML1) and / or a light shielding film (MS) to solve the above problem. For example, the microlenses (ML1, ML2) may include a first microlens (ML1) corresponding to one unit pixel and a second microlens (ML2) having a shape different from that of the first microlens (ML1). However, the shape of the second microlens (ML2) may not be limited to that shown in FIG. 3. Additionally, the image sensor (100) may include a light shielding film (MS) that blocks a portion of light in the vertical direction, that is, in a third direction (e.g., the y-direction) perpendicular to the first direction and the second direction. For example, the light shielding film (MS) may be a metal shield layer including tungsten (W), etc. For example, the light shielding film (MS) can detect the phase difference of light divided in the vertical direction by blocking a portion of the incident light. Accordingly, the image sensor (100) can improve autofocus performance in the vertical direction by using the detected phase difference. However, the shape of the light shielding film (MS) may not be limited to that shown in FIG. 3. The image sensor (100) including the aforementioned second micro lens (ML2) and / or light shielding film (MS) can solve the problem of autofocus performance in the vertical direction, i.e., the third direction, while maintaining autofocus performance in the horizontal direction, i.e., the second direction, by detecting the phase difference of light in the vertical direction.

[0046] For example, the image sensor (100) according to the embodiment illustrated in FIG. 3 may be an embodiment that includes both a second microlens (ML2) and a light shielding film (MS). Meanwhile, the light shielding film (MS) included in the image sensor (100) may overlap with a part of the second microlens (ML2) in a first direction. However, the configuration of the image sensor (100) illustrated in FIG. 3 is merely one embodiment and may not be limited. For example, image sensors according to one embodiment of the present invention may include a second microlens (ML2) but not a light shielding film (MS). Additionally, the image sensor may include only a first microlens (ML1) and include a light shielding film (MS). For example, the image sensor may include a second microlens (ML2) and a light shielding film (MS) that does not overlap with the second microlens (ML2) in a first direction.

[0047] In an image sensor (100) according to one embodiment of the present invention, among a plurality of unit pixels (PX1, PX2, PX3, PX4), the first pixel (PX1) and the second pixel (PX2) may correspond to a single second microlens (ML2). In other words, the first pixel (PX1) and the second pixel (PX2) may share the second microlens (ML2). For example, the first pixel (PX1) and the second pixel (PX2) may be unit pixels arranged side by side in a third direction. Meanwhile, the third pixel (PX3) and the fourth pixel (PX4) may each correspond to a single first microlens (ML1).

[0048] In an image sensor (100) according to one embodiment of the present invention, at least one of a plurality of unit pixels (PX1, PX2, PX3, PX4) may include a light shielding film (MS) for improving the autofocus function in the vertical direction. For example, at least one unit pixel including the light shielding film (MS) may include one of a first pixel (PX1) and a second pixel (PX2) including a modified second microlens (ML2). For example, in the image sensor (100) illustrated in FIG. 3, the first pixel (PX1) may include a light shielding film (MS). In this case, in a plane perpendicular to the first direction, the area of ​​the light shielding film (MS) may correspond to the area of ​​the first pixel (PX1).

[0049] In an image sensor (100) according to one embodiment of the present invention, a first pixel (PX1) including a light shielding film (MS) and a second pixel (PX2) sharing a second microlens (ML2) with the first pixel (PX1) may include color filters of the same color. For example, the color filters included in the first pixel (PX1) and the second pixel (PX2) may be white. However, this is merely one embodiment and is not limited thereto, and the color filters may be any one of green, red, or blue, or may have other colors.

[0051] FIGS. 4 to 7 are cross-sectional views of an image sensor according to an embodiment of the present invention illustrated in FIG. 3.

[0052] FIGS. 4 to 7 may each be a cross-sectional view of the image sensor (100) illustrated in FIG. 3 cut in any one of the directions from line II' to line IV-IV'. For example, FIG. 4 may be a cross-sectional view showing the direction of line II' of FIG. 3, and FIG. 5 may be a cross-sectional view showing the direction of line II-II' of FIG. 3. Additionally, FIG. 6 may be a cross-sectional view showing the direction of line III-III' of FIG. 3, and FIG. 7 may be a cross-sectional view showing the direction of line IV-IV' of FIG. 3.

[0053] Referring to FIGS. 4 to 7, an image sensor (100) according to one embodiment of the present invention may include a substrate (110) comprising a first surface (111) and a second surface (112) facing each other, and a device isolation layer (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4) inside the substrate (110). For example, the plurality of unit pixels (PX1, PX2, PX3, PX4) may be arranged along a direction parallel to the first surface (111). Meanwhile, each of the plurality of unit pixels (PX1, PX2, PX3, PX4) may include first and second photodiodes (PD1, PD2) disposed inside the substrate (110) and separated from each other in a second direction (e.g., x direction).

[0054] Although not shown in the cross-sectional views of FIGS. 4 to 7, an internal device isolation layer may be further included between the first and second photodiodes (PD1, PD2). For example, the device isolation layer (DTI) and the internal device isolation layer may extend in a first direction (e.g., z-direction) within a substrate (110) containing a semiconductor material. The device isolation layer (DTI) and the internal device isolation layer may extend from the second surface (112) toward the first surface (111). However, this is not limited thereto, and depending on the process, they may extend from the first surface (111) toward the second surface (112). Meanwhile, when the device isolation layer (DTI) and the internal device isolation layer extend from the first surface (111) toward the second surface (112), the internal device isolation layer may be connected to the first surface (111) and not connected to the second surface (112). For example, in the first direction, the length of the internal device isolation layer may be shorter than the device isolation layer (DTI). However, this is not limited thereto, and in the first direction, the internal device isolation layer may have the same length as the device isolation layer (DTI).

[0055] In an image sensor (100) according to one embodiment of the present invention, each of a plurality of unit pixels (PX1, PX2, PX3, PX4) may include a color filter (121, 122, 123, 124), a light-transmitting layer (130), and a micro lens (ML1, ML2) disposed on a first surface (111) of a substrate (110). For example, a light-shielding film (MS) may be disposed on the upper surface of the first color filter (121) included in the first pixel (PX1). However, this is merely one embodiment and is not limited thereto, and the placement of the light-shielding film (MS) may vary depending on the embodiment.

[0056] Some of the plurality of unit pixels (PX1, PX2, PX3, PX4) may each include a first microlens (ML1) positioned above the first photodiode (PD1) and the second photodiode (PD2). For example, the third pixel and the fourth pixel may each include a first microlens (ML1). Meanwhile, the remaining portion of the plurality of unit pixels (PX1, PX2, PX3, PX4) may include a second microlens (ML2) positioned above the first photodiode (PD1) and the second photodiode (PD2). For example, the first pixel and the second pixel may share a single second microlens (ML2). Light passing through the microlenses (ML1, ML2) may be incident on the first photodiode (PD1) and the second photodiode (PD2) together. As described above, an image sensor (100) according to one embodiment of the present invention can supplement the autofocus function in the vertical direction by using a modified second micro lens (ML2) and / or a light shielding film (MS).

[0057] In an image sensor (100) according to one embodiment of the present invention, a pixel circuit may be disposed below a first photodiode (PD1) and a second photodiode (PD2). For example, the pixel circuit may include a plurality of elements (160), wiring patterns (170) connected to the plurality of elements (160), and an insulating layer (180) covering the plurality of elements (160) and the wiring patterns (170), and may be disposed on a second surface (112) of a substrate (110).

[0058] The pixel circuit may include a floating diffusion region (150). For example, each of the plurality of unit pixels (PX1, PX2, PX3, PX4) may include a floating diffusion region (150) positioned below at least one of the first photodiode (PD1) and the second photodiode (PD2). For example, each floating diffusion region (150) may be electrically connected to one another by at least one of the wiring patterns (170), and the position and area of ​​each floating diffusion region (150) may vary according to the embodiments. For example, a plurality of elements (160) adjacent to the floating diffusion region (150) may be a first transfer transistor and a second transfer transistor. The gates of the first transfer transistor and the second transfer transistor may each have a vertical structure in which at least a portion of the area is embedded in the substrate (110).

[0059] Referring to FIG. 4, among the plurality of unit pixels (PX1, PX2, PX3, PX4) included in the image sensor (100), the first pixel (PX1) is a pixel for supplementing the autofocus function in the up-and-down direction, and the third pixel (PX3) may be a general pixel or an autofocus pixel related to the autofocus function in the left-and-right direction. For example, the first pixel (PX1) may include a second microlens (ML2) extended in a third direction (e.g., the y direction). Additionally, the first pixel (PX1) may include a light shielding film (MS) and may be defined as a shielding pixel.

[0060] Referring to FIGS. 5 and 6, among the plurality of unit pixels (PX1, PX2, PX3, PX4) included in the image sensor (100), the second pixel (PX2) is a pixel for supplementing the autofocus function in the up-and-down direction, and the fourth pixel (PX4) may be a general pixel or an autofocus pixel related to the autofocus function in the left-and-right direction. For example, the second pixel (PX2) may include a second micro-lens (ML2) extended in the third direction, and unlike the first pixel (PX1), may not include a light shielding film (MS). For example, the second pixel (PX2) can improve the autofocus function in the up-and-down direction of the image sensor (100) together with the first pixel (PX1).

[0061] Referring to FIG. 7, the image sensor (100) may include a first photodiode (PD1) and a second photodiode (PD2) separated from each other. For example, in a third direction, the image sensor (100) may have at least one cross section that does not include the first photodiode (PD1) and the second photodiode (PD2).

[0062] However, the cross-sectional view of the image sensor (100) illustrated in FIGS. 4 to 7 is merely one embodiment and is not limited. For example, the cross-sectional view of the image sensor (100) may vary depending on the shape of the second micro lens (ML2), the light shielding film (MS), the device isolation film (DTI), and the internal device isolation film, and the arrangement relationship between each component and the color filters (121, 122, 123, 124).

[0064] FIGS. 8 and FIGS. 9 are top views of an image sensor according to embodiments of the present invention.

[0065] Referring to FIGS. 8 and 9, image sensors (200A, 200B) according to one embodiment of the present invention may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) inside a semiconductor substrate, a device isolation film (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), and microlenses (ML1, ML2). For example, the image sensors (200A, 200B) may be an image sensor in which the light shielding film (MS) is omitted and the color filters (121, 122, 123, 124) are changed from the image sensor (100) shown in FIG. 3. Other configurations may correspond to the image sensor (100). However, this is merely one embodiment and is not limited thereto. For example, the image sensors (200A, 200B) may further include a light shielding film (MS) according to the embodiment.

[0066] Meanwhile, among the plurality of unit pixels (PX1, PX2, PX3, PX4) included in the image sensors (200A, 200B), a second microlens (ML2) may be disposed above the first pixel (PX1) and the second pixel (PX2), and a first microlens (ML1) may be disposed above the third pixel (PX3) and the fourth pixel (PX4). For example, the first pixel (PX1) and the second pixel (PX2) may be unit pixels arranged side by side in a third direction (e.g., the y direction). The second microlens (ML2) may have a modified shape of the first microlens (ML1). For example, the first microlens (ML1) may be a microlens corresponding to each of the third pixel (PX3) and the fourth pixel (PX4), and the first pixel (PX1) and the second pixel (PX2) may share at least one second microlens (ML2).

[0067] Referring to FIG. 8, in an image sensor (200A) according to one embodiment of the present invention, a first pixel (PX1) and a second pixel (PX2) may share a single second microlens (ML2). For example, since each of a plurality of unit pixels (PX1, PX2, PX3, PX4) includes first and second photodiodes (PD1, PD2), a single second microlens (ML2) may be placed above two first photodiodes (PD1) and two second photodiodes (PD2) in the first pixel (PX1) and the second pixel (PX2).

[0068] In an image sensor (200A) according to one embodiment of the present invention, a first pixel (PX1) and a second pixel (PX2) arranged side by side in a third direction (e.g., y direction) may be pixels that supplement autofocus performance in the up-down direction, i.e., the third direction, by using a shared second microlens (ML2). For example, the image sensor (200A) may detect a phase difference in the left-right direction of light incident through the second microlens (ML2) from a first photodiode (PD1) and a second photodiode (PD2) included in a single unit pixel. Meanwhile, the first photodiode (PD1) of each of the first pixel (PX1) and the second pixel (PX2) may be separated in the third direction, and the second photodiode (PD2) of each of the first pixel (PX1) and the second pixel (PX2) may also be separated in the third direction. For example, the image sensor (200A) can detect the phase difference in the vertical direction of light incident through the second microlens (ML2) from two first photodiodes (PD1) and / or two second photodiodes (PD2) arranged in the vertical direction.

[0069] In the image sensor (200A) illustrated in FIG. 8, the first microlens (ML1) may have a length of X1 in the second direction and a length of Y1 in the third direction. Meanwhile, the second microlens (ML2) may have a length of X2 in the second direction and a length of Y2 in the third direction. For example, since the first pixel (PX1) and the second pixel (PX2) share one second microlens (ML2), the second microlens (ML2) may have the same length as the first microlens (ML1) in the second direction. Also, the second microlens (ML2) may have a longer length than the first microlens (ML1) in the third direction. In other words, X1 may be substantially the same value as X2, and Y1 may be a smaller value than Y2. For example, Y2 may be greater than or equal to twice Y1.

[0070] Referring to FIG. 9, in an image sensor (200B) according to one embodiment of the present invention, a first pixel (PX1) and a second pixel (PX2) may share two second microlenses (ML2). For example, since each of a plurality of unit pixels (PX1, PX2, PX3, PX4) includes first and second photodiodes (PD1, PD2), each of the second microlenses (ML2) may be placed on top of two first photodiodes (PD1) or two second photodiodes (PD2) in the first pixel (PX1) and the second pixel (PX2).

[0071] In the image sensor (200B) illustrated in FIG. 9, the first microlens (ML1) may have a length of X1 in the second direction and a length of Y1 in the third direction. Meanwhile, each of the second microlenses (ML2) may have a length of X3 in the second direction and a length of Y3 in the third direction. For example, since the first pixel (PX1) and the second pixel (PX2) share two second microlenses (ML2), the second microlens (ML2) may have a shorter length than the first microlens (ML1) in the second direction. Also, the second microlens (ML2) may have a longer length than the first microlens (ML1) in the third direction. In other words, X1 may be a value greater than X2, and Y1 may be a value smaller than Y2. For example, X1 may be greater than or equal to twice X2, and Y2 may be greater than or equal to twice Y1.

[0072] The operation of the image sensor (200B) according to one embodiment of the present invention may be similar to the image sensor (200A) shown in FIG. 8. For example, light incident on each of the second microlenses (ML2) may be incident on two first photodiodes (PD1) or two second photodiodes (PD2). Accordingly, the image sensor (200B) can improve autofocus performance in the up-down direction, i.e., the third direction. However, the first pixel (PX1) and the second pixel (PX2) included in the image sensor (200B) shown in FIG. 9 may have relatively poor autofocus performance in the left-right direction, i.e., the second direction.

[0073] In image sensors (200A, 200B) according to embodiments of the present invention for improving autofocus performance in the vertical direction using a modified second microlens (ML2) without a light shield, the modified shape of the second microlens (ML2) is not limited to FIGS. 8 and 9 and may vary depending on the embodiment. Meanwhile, in the image sensors (200A, 200B) illustrated in FIGS. 8 and 9, the color filters included in the first pixel (PX1) and the second pixel (PX2) are shown to have different colors, but may not be limited thereto. For example, since the phase difference of incident light may vary depending on the color of the color filter, the color filters included in the first pixel (PX1) and the second pixel (PX2) containing the second microlens (ML2) may have the same color. For example, the color filters included in the first pixel (PX1) and the second pixel (PX2) may be green. However, it is not limited to this and may be red, blue, or other colors.

[0075] FIG. 10 is a top view of an image sensor according to one embodiment of the present invention.

[0076] Referring to FIG. 10, an image sensor (300A) according to one embodiment of the present invention may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) within a semiconductor substrate, a device isolation film (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), a first microlens (ML1), and a light shielding film (MS). For example, the image sensor (300A) may be an image sensor comprising a first microlens (ML1) corresponding to the first pixel (PX1) and the second pixel (PX2), respectively, instead of the second microlens (ML2) in the image sensor (100) shown in FIG. 3. Other configurations may correspond to the image sensor (100). However, this is merely one embodiment and is not limited thereto. For example, the image sensor (300A) may have a different arrangement of the light shielding film (MS) according to the embodiment, or may further include a second micro lens (ML2).

[0077] Among the plurality of unit pixels (PX1, PX2, PX3, PX4) included in an image sensor (300A) according to one embodiment of the present invention, the first pixel (PX1) may include a light shielding film (MS) for blocking a portion of the incident light. For example, the light shielding film (MS) included in the image sensor (300A) may overlap with a part of the first microlens (ML1) in the first direction. However, the shape of the light shielding film (MS) may not be limited to that shown in FIG. 10. The image sensor (300A) including the light shielding film (MS) can solve the problem of autofocus performance in the up-down direction, i.e., the third direction, while maintaining autofocus performance in the left-right direction, i.e., the second direction, by detecting the phase difference of light in the up-down direction.

[0078] In an image sensor (300A) according to one embodiment of the present invention, at least one of a plurality of unit pixels (PX1, PX2, PX3, PX4) may include a light shielding film (MS) to improve the autofocus function in the vertical direction. For example, a first pixel (PX1) included in the image sensor (300A) may include a light shielding film (MS). In this case, the first pixel (PX1) may be defined as a shielding pixel. In the shielding pixel, the light shielding film (MS) may have an interface that overlaps with the optical axis of a micro-lens disposed above it. In other words, the first pixel (PX1) of the image sensor (300A) illustrated in FIG. 10 may be a shielding pixel that includes a light shielding film (MS). For example, the first pixel (PX1) may include a first micro-lens (ML1), and the optical axis of the first micro-lens (ML1) may be an axis passing through the center of the first pixel (PX1). Meanwhile, the boundary surface of the light shielding film (MS) may pass through the optical axis of the first microlens (ML1). For example, the light shielding film (MS) may have a boundary surface that passes through the optical axis of the first microlens (ML1) and is located on a plane perpendicular to the third direction. In other words, in a plane perpendicular to the first direction, the area of ​​the light shielding film (MS) may correspond to half the area of ​​the first pixel (PX1).

[0079] In an image sensor (300A) according to one embodiment of the present invention, a first pixel (PX1) including a light shielding film (MS) may include a color filter of a different color from other unit pixels (PX2, PX3, PX4) that do not include a light shielding film (MS). For example, the color filter included in the first pixel (PX1) may be white. However, this is merely one embodiment and is not limited thereto, and the color filter included in the first pixel (PX1) may be any one of green, red, or blue, or may have other colors.

[0081] FIG. 11 is a cross-sectional view of an image sensor according to one embodiment of the present invention illustrated in FIG. 10.

[0082] FIG. 11 may be a cross-sectional view of the image sensor (300A) shown in FIG. 10 cut along the VV' line. The image sensor (300A) shown in FIG. 11 may correspond to the cross-sectional view of the image sensor (100) shown in FIG. 6. For example, an image sensor (300A) according to one embodiment of the present invention may include a substrate (310) having a first surface (311) and a second surface (312) facing each other, and a device isolation film disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4) inside the substrate (310). Meanwhile, each of the plurality of unit pixels (PX1, PX2, PX3, PX4) may include first and second photodiodes (PD1, PD2) disposed inside the substrate (310) and separated from each other in a second direction (e.g., x direction).

[0083] However, the image sensor (300A) may include a different configuration from the color filters (121, 122, 123, 124), light shielding film (MS), and second microlens (ML2) included in the image sensor (100) illustrated in FIG. 6. For example, the image sensor (300A) may include two first microlenses (ML1) instead of the second microlens (ML2). Additionally, it may include a light shielding film (MS) corresponding to half rather than the entire first pixel (PX1), and the color filter (322) included in the second pixel (PX2) may have a different color from the color filter (321) included in the first pixel (PX1). For example, the color filter (322) included in the second pixel (PX2) may be blue, and the color filter (321) included in the first pixel (PX1) may be white. However, this is merely one embodiment and is not limited to this. For example, this can be explained from the top view of the image sensors (100, 300A) shown in FIG. 3 and FIG. 10, respectively. However, this is not limited thereto, and the arrangement and shape of the light shielding film (MS) may vary depending on the embodiment.

[0085] FIGS. 12 to 14 are top views of an image sensor according to embodiments of the present invention.

[0086] The image sensors (300B, 300C, 300D) illustrated in FIGS. 12 and 13 may be embodiments corresponding to the image sensor (300A) illustrated in FIG. 10. For example, the image sensors (300B, 300C, 300D) may include a first microlens (ML1) having the same size as each other, and a light shielding film (MS) that overlaps with the first microlens (ML1) in a first direction (e.g., the z-direction). However, the arrangement and number of light shielding films (MS) may vary depending on the embodiment. Meanwhile, the shielding pixels including the light shielding film (MS) may include a color filter of the same color. For example, the shielding pixels may include a white color filter. However, this is merely one embodiment and is not limited thereto.

[0087] For example, referring to FIGS. 12 to 14, a first pixel (PX1) included in each of the image sensors (300B, 300C, 300D) may be a shielded pixel including a light shielding film (MS). The light shielding film (MS) may have an interface that overlaps with the optical axis of a first microlens (ML1) disposed above it. For example, the first pixel (PX1) may include a first microlens (ML1), and the optical axis of the first microlens (ML1) may be an axis passing through the center of the first pixel (PX1). For example, the light shielding film (MS) may have an interface that passes through the optical axis of the first microlens (ML1) and is located on a plane perpendicular to the third direction. Accordingly, in a plane perpendicular to the first direction, the area of ​​the light shielding film (MS) may correspond to half the area of ​​the first pixel (PX1). The light shielding film (MS) can overlap with a portion of the first photodiode (PD1) and the second photodiode (PD2) in the first direction.

[0088] Referring to FIG. 10 and FIG. 12 together, image sensors (300A, 300B) according to one embodiment of the present invention may include a light shielding film (MS) positioned at different locations in a third direction based on a boundary surface passing through the optical axis of the first microlens (ML1) in a second direction (e.g., x direction). For example, the image sensor (300A) shown in FIG. 10 may include a light shielding film (MS) positioned at a first location, and the image sensor (300B) shown in FIG. 12 may include a light shielding film (MS) positioned at a second location. For example, the first location and the second location may mean the upper and lower directions, respectively, based on the boundary surface passing through the optical axis of the first microlens (ML1). However, this is merely one embodiment and is not limited to this. For example, image sensors (300A, 300B) may include a plurality of shielding pixels each comprising a light shielding film (MS) positioned at a first position and a second position. For example, a shielding pixel comprising a light shielding film (MS) positioned at the first position may be defined as a first shielding pixel, and a shielding pixel comprising a light shielding film (MS) positioned at the second position may be defined as a second shielding pixel. For example, the number of first shielding pixels included in the entirety of each of the image sensors (300A, 300B) may be equal to the number of second shielding pixels.

[0089] Referring to FIG. 13, the first shielding pixel and the second shielding pixel may both be contained within a Bayer color filter array arranged in a 2×2 shape. Meanwhile, the first shielding pixel and the second shielding pixel may not be adjacent in both the second direction and the third direction. For example, the first shielding pixel may be the first pixel (PX1) and the second shielding pixel may be the fourth pixel (PX4). However, this is merely one embodiment and is not limited thereto. For example, the first shielding pixel may be the fourth pixel (PX4) and the second shielding pixel may be the first pixel (PX1). Additionally, the first shielding pixel may be the second pixel (PX2) or the third pixel (PX3), and the second shielding pixel may be the third pixel (PX3) or the second pixel (PX2).

[0090] Referring to FIG. 14, the first shielding pixel and the second shielding pixel may be adjacent in a third direction and not adjacent in a second direction. For example, the first shielding pixel may be the second pixel (PX2) and the second shielding pixel may be the first pixel (PX1). However, this is merely one embodiment and is not limited thereto. For example, the first shielding pixel may be the first pixel (PX1) and the second shielding pixel may be the second pixel (PX2). Additionally, the first shielding pixel may be the third pixel (PX3) or the fourth pixel (PX4), and the second shielding pixel may be the fourth pixel (PX4) or the third pixel (PX3).

[0091] Meanwhile, in the image sensors (300A, 300B, 300C, 300D) according to one embodiment of the present invention, the arrangement of a plurality of unit pixels (PX1, PX2, PX3, PX4) may not be limited to that shown. For example, the image sensors (300A, 300B, 300C, 300D) may include not only one arrangement of a plurality of unit pixels (PX1, PX2, PX3, PX4) but may also include various pixel arrangements.

[0093] FIGS. 15 and 16 are drawings for illustrating a pixel array included in an image sensor according to embodiments of the present invention.

[0094] First, referring to FIG. 15, a pixel array (10A) of an image sensor according to one embodiment of the present invention may include a plurality of unit pixels (PX). For example, the pixel array (10A) may include general pixels and autofocus pixels. Each of the general pixels and autofocus pixels may be in the plurality, and the number thereof may vary in various ways. For example, the pixel array (10A) of the image sensor may include only autofocus pixels. However, this is merely one embodiment and is not limited, and the number of general pixels may be greater than the number of autofocus pixels. In addition, the position of the autofocus pixels is also not limited and may vary in various ways.

[0095] An autofocus pixel may include a first photodiode and a second photodiode. In the autofocus pixel, the first photodiode and the second photodiode may be arranged along one direction (horizontal direction), and the first photodiode and the second photodiode may share a single microlens. However, this is merely one embodiment and is not limited thereto, and two unit pixels adjacent in a third direction (e.g., y-direction) may share a single microlens. Additionally, according to the embodiments, in some of the autofocus pixels, the first photodiode and the second photodiode may be arranged along a direction different from the one direction.

[0096] Meanwhile, the pixel array (10A) of the image sensor may include a shielded pixel (SPX) that includes a light shielding film. For example, the shielded pixel (SPX) can detect the phase difference in the vertical direction of the incident light. Accordingly, the shielded pixel (SPX) can be used to complement the autofocus performance in the vertical direction of the image sensor. Meanwhile, the shielded pixel (SPX) may be a defective pixel in terms of detecting a pixel signal and performing an image sensing operation. Therefore, an additional adjustment algorithm may be applied to process the shielded pixel (SPX) during the operation of the image sensor.

[0097] A pixel array (10A) of an image sensor according to one embodiment of the present invention may include a color filter having an array that generates an image having a Bayer pattern. For example, the pixel array (10A) of the image sensor may repeatedly consist of a 2×2 Bayer color filter array arranged in the order of red, green, green, and blue. However, this is merely one embodiment, and the color filter array that is repeatedly configured may vary. For example, a white color filter may be included in the color filter array. For example, a shielding pixel including a light shielding film may include a white color filter.

[0098] The pixel array of the pixel array (10A) including the Bayer color filter array may not be limited to that shown in FIG. 15. For example, the pixel array of the pixel array (10A) may have the pixel array shown in FIG. 3, FIG. 8 to 10, and FIG. 12 to 14. However, this is merely one embodiment and may not be limited. For example, the pixel array (10A) of the image sensor according to one embodiment of the present invention may have an array other than the aforementioned pixel array, and may have a plurality of different pixel arrays. The pixel arrangement of the pixel array (10A) including the shielding pixel (SPX) may need to be appropriately designed as necessary, taking into account the performance of the image sensor.

[0099] Meanwhile, referring to FIG. 16, the pixel array (10B) may include a plurality of pixel groups (PG1, PG2) arranged along a direction parallel to the upper surface of the substrate. Additionally, each of the plurality of pixel groups (PG1, PG2) may include a plurality of unit pixels (PX), and each of the plurality of unit pixels (PX) may include a first photodiode and a second photodiode. However, depending on the embodiments, only some of the unit pixels (PX) may include the first photodiode and the second photodiode, or the arrangement direction of the first photodiode and the second photodiode may differ in at least some of the unit pixels (PX). Meanwhile, the pixel array (10A) illustrated in FIG. 15 may be defined as a pixel array (10A) including pixel groups, each containing one unit pixel (PX).

[0100] Meanwhile, the pixel array (10B) of the image sensor may include a shielded pixel (SPX) that includes a light shielding film. A plurality of pixel groups (PG1, PG2) may include a first pixel group (PG1) that does not include a shielded pixel (SPX) and a second pixel group (PG2) that includes a shielded pixel (SPX). The light shielding film included in the shielded pixel (SPX) may overlap with at least a portion of the first photodiode and the second photodiode in a first direction. However, this is merely one embodiment and is not limited thereto, and if the image sensor does not include a shielded pixel (SPX), the second pixel group (PG2) may be defined as a pixel group that includes a pixel that includes a modified second microlens to complement autofocus performance in the vertical direction.

[0101] A pixel array (10B) of an image sensor according to one embodiment of the present invention may include a color filter having an array that generates an image having a Tetra pattern. For example, the pixel array (10B) of the image sensor may have a 4×4 Tetra color filter array in which red, green, green, and blue are each arranged in a 2×2 form. Meanwhile, a plurality of pixel groups (PG1, PG2) may each include 2×2 unit pixels (PX). In other words, the 2×2 unit pixels (PX) included in the plurality of pixel groups (PG) may include a color filter of the same color. For example, a Tetra color filter array arranged repeatedly as described above may constitute the pixel array (10B). However, this is merely one embodiment, and the color filter array configured repeatedly may vary. Meanwhile, a shielding pixel (SPX) may include a white color filter. Accordingly, a second pixel group (PG2) including a shielding pixel (SPX) may include color filters of different colors.

[0102] Meanwhile, the pixel array of the pixel array (10B) including the tetra color filter array may not be limited to that shown in FIG. 16. Embodiments related to the pixel array of the pixel array (10B) will be described later.

[0104] FIGS. 17 to 31 are top views of an image sensor according to embodiments of the present invention.

[0105] FIGS. 17 and 18 may be top views of image sensors (400A, 400B) including a second microlens (ML2) modified without a light shield.

[0106] Referring to FIGS. 17 and 18, image sensors (400A, 400B) according to one embodiment of the present invention may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) within a semiconductor substrate, a device isolation layer (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), and microlenses (ML1, ML2). For example, the image sensors (400A, 400B) may be image sensors modified to include a color filter having a tetracolor filter array from the image sensors (200A, 200B) shown in FIGS. 8 and 9. Other configurations may correspond to the image sensors (200A, 200B).

[0107] Meanwhile, the image sensors (400A, 400B) may include a first pixel group (PG1) comprising unit pixels including only a first microlens (ML1), and a second pixel group (PG2) comprising unit pixels including a modified second microlens (ML2). For example, among a plurality of unit pixels (PX1, PX2, PX3, PX4) included in the second pixel group (PG2), a second microlens (ML2) may be disposed above the first pixel (PX1) and the second pixel (PX2), and a first microlens (ML1) may be disposed above the third pixel (PX3) and the fourth pixel (PX4). For example, the first pixel (PX1) and the second pixel (PX2) may be unit pixels arranged side by side in a third direction (e.g., the y direction). For example, the first microlens (ML1) may be a microlens corresponding to each of the third pixel (PX3) and the fourth pixel (PX4), and the first pixel (PX1) and the second pixel (PX2) may share at least one second microlens (ML2).

[0108] Referring to FIG. 17, in an image sensor (400A) according to one embodiment of the present invention, a first pixel (PX1) and a second pixel (PX2) may share a single second microlens (ML2). For example, since each of a plurality of unit pixels (PX1, PX2, PX3, PX4) includes first and second photodiodes (PD1, PD2), a single second microlens (ML2) may be placed above two first photodiodes (PD1) and two second photodiodes (PD2) in the first pixel (PX1) and the second pixel (PX2).

[0109] Meanwhile, referring to FIG. 18, in an image sensor (400B) according to one embodiment of the present invention, a first pixel (PX1) and a second pixel (PX2) may share two second microlenses (ML2). For example, since each of a plurality of unit pixels (PX1, PX2, PX3, PX4) includes first and second photodiodes (PD1, PD2), each of the second microlenses (ML2) may be placed on top of two first photodiodes (PD1) or two second photodiodes (PD2) in the first pixel (PX1) and the second pixel (PX2).

[0111] FIGS. 19 to 26 may be top views of image sensors (500A, 500B, 500C, 500D, 500E, 500F, 500G, 500H) including a light shielding film (MS) and a first micro lens (ML1).

[0112] Image sensors (500A, 500B, 500C, 500D, 500E, 500F, 500G, 500H) according to one embodiment of the present invention may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) inside a semiconductor substrate, a device isolation film (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), a first microlens (ML1) having the same size as each other, and a light shielding film (MS). For example, the image sensors (500A, 500B, 500C, 500D, 500E, 500F, 500G, 500H) may be image sensors modified to include a color filter having a tetracolor filter array in the image sensors (300A, 300B, 300C, 300D) shown in FIG. 10, 12 to 14. Other configurations may correspond to the image sensors (300A, 300B, 300C, 300D).

[0113] Meanwhile, image sensors (500A, 500B, 500C, 500D, 500E, 500F, 500G, 500H) may include a first pixel group (PG1) comprising unit pixels that do not include a light shielding film (MS), and a second pixel group (PG2) comprising unit pixels that include a light shielding film (MS) for blocking a portion of incident light. In this case, the unit pixels that include the light shielding film (MS) may be shielded pixels. For example, the light shielding film (MS) may have an interface located on a plane perpendicular to the third direction, passing through the optical axis of the first microlens (ML1). Accordingly, in a plane perpendicular to the first direction, the area of ​​the light shielding film (MS) may correspond to half the area of ​​the shielded pixel.

[0114] For example, the light shielding film (MS) may be positioned at different first or second positions in a third direction based on the boundary surface passing through the optical axis of the first microlens (ML1). For example, a shielding pixel including the light shielding film (MS) positioned at the first position may be defined as the first shielding pixel, and a shielding pixel including the light shielding film (MS) positioned at the second position may be defined as the second shielding pixel. Meanwhile, the placement and number of light shielding films (MS) may vary depending on the embodiment. The number of first shielding pixels included in the entirety of each of the image sensors (500A, 500B, 500C, 500D, 500E, 500F, 500G, 500H) may be equal to the number of second shielding pixels.

[0115] Referring to FIG. 19, a second pixel group (PG2) may include two shielding pixels. For example, the two shielding pixels may include a light shielding film (MS) placed at the same location. Meanwhile, the two shielding pixels may be adjacent to each other in a third direction. For example, the first pixel (PX1) and the second pixel (PX2) included in the second pixel group (PG2) may be the first shielding pixels. However, this is not limited thereto, and the first pixel (PX1) and the second pixel (PX2) may be the second shielding pixels. Additionally, the third pixel (PX3) and the fourth pixel (PX4) included in the second pixel group (PG2) may be the first shielding pixels or the second shielding pixels.

[0116] Referring to FIG. 20, unit pixels having a tetracolor filter array may include two second pixel groups (PG2). For example, one second pixel group (PG2) may include one shielding pixel. For example, the second pixel group (PG2) may include a shielding pixel including a light shielding film (MS) placed at the same location. For example, each of the second pixel groups (PG2) may include a first shielding pixel.

[0117] Referring to FIGS. 21 and 22, a second pixel group (PG2) may include two shielding pixels. For example, the two shielding pixels may include light shielding films (MS) placed at different locations. Meanwhile, the two shielding pixels may be adjacent to each other in a third direction. For example, in the image sensor (500C) shown in FIG. 21, the first pixel (PX1) included in the second pixel group (PG2) may be the first shielding pixel, and the second pixel (PX2) may be the second shielding pixel. Meanwhile, in the image sensor (500D) shown in FIG. 22, the third pixel (PX3) included in the second pixel group (PG2) may be the second shielding pixel, and the fourth pixel (PX4) may be the first shielding pixel. However, this is not limited thereto, and the first pixel (PX1) may be the second shielding pixel, and the second pixel (PX2) may be the first shielding pixel. Additionally, the third pixel (PX3) included in the second pixel group (PG2) may be the first shielding pixel, and the fourth pixel (PX4) may be the second shielding pixel.

[0118] Referring to FIGS. 23 and 24, a second pixel group (PG2) may include two shielding pixels. Meanwhile, the two shielding pixels may not be adjacent to each other in the second direction and the third direction. For example, the two shielding pixels may include light shielding films (MS) placed at the same location or at different locations. For example, the first pixel (PX1) and the fourth pixel (PX4) included in the second pixel group (PG2) may be the first shielding pixels. Or, the first pixel (PX1) may be the first shielding pixel and the fourth pixel (PX4) may be the second shielding pixel. However, it may not be limited thereto. For example, the second pixel (PX2) and the third pixel (PX3) included in the second pixel group (PG2) may be shielding pixels. For example, referring to FIG. 26, the second pixel (PX2) may be the first shielding pixel and the third pixel (PX3) may be the second shielding pixel.

[0119] Referring to FIG. 25, unit pixels having a tetracolor filter array may include two second pixel groups (PG2). For example, one second pixel group (PG2) may include one shielding pixel. For example, the second pixel group (PG2) may include a shielding pixel including a light shielding film (MS) placed at different locations. For example, each of the second pixel groups (PG2) may include a first shielding pixel and a second shielding pixel. Meanwhile, the shielding pixels included in each of the second pixel groups (PG2) may be placed at different locations. For example, in the second pixel group (PG2) including the first shielding pixel, the first shielding pixel may be the first pixel (PX1), and in the second pixel group (PG2) including the second shielding pixel, the second shielding pixel may be a unit pixel placed at a location corresponding to the fourth pixel (PX4).

[0121] FIGS. 27 to 31 may be top views of image sensors (600A, 600B, 600C, 600D, 700) comprising a light shielding film (MS) and a modified second microlens (ML2).

[0122] Referring to FIGS. 27 to 31, image sensors (600A, 600B, 600C, 600D, 700) may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) inside a semiconductor substrate, a device isolation film (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), a first microlens (ML1), a second microlens (ML2) modified from the first microlens (ML1), and a light shielding film (MS).

[0123] Referring to FIGS. 27 to 30, a unit pixel including a light shielding film (MS) may correspond to a second microlens (ML2). In other words, the light shielding film (MS) may overlap with the second microlens (ML2) in a first direction. Meanwhile, depending on the embodiment, the positions of the second microlens (ML2) and the light shielding film (MS) may vary.

[0124] Referring to FIG. 27, the first pixel (PX1) and the second pixel (PX2) may share a second microlens (ML2). Meanwhile, the first pixel (PX1) may include a light shielding film (MS), and the first pixel (PX1) may be defined as a first shielding pixel depending on the position of the light shielding film (MS). However, this is merely one embodiment and is not limited thereto.

[0125] For example, referring to FIG. 28, the third pixel (PX3) and the fourth pixel (PX4) may share a second microlens (ML2). Meanwhile, the fourth pixel (PX4) may include a light shielding film (MS), and the fourth pixel (PX4) may be defined as a second shielding pixel depending on the position of the light shielding film (MS).

[0126] Additionally, referring to FIGS. 29 and FIGS. 30, two unit pixels arranged side by side in a third direction may share two second microlenses (ML2). For example, a first pixel (PX1) and a second pixel (PX2), or a third pixel (PX3) and a fourth pixel (PX4) may share two second microlenses (ML2). Accordingly, each second microlens (ML2) may have a length smaller than the length of the unit pixel in the second direction. Meanwhile, the first pixel (PX1) of the second pixel group (PG2) included in the image sensor (600C) of FIG. 29 may include a light shielding film (MS), and the first pixel (PX1) may be defined as a first shielded pixel depending on the position of the light shielding film (MS). The fourth pixel (PX1) of the second pixel group (PG2) included in the image sensor (600D) of FIG. 30 may include a light shielding film (MS), and the fourth pixel (PX1) may be defined as a second shielded pixel depending on the position of the light shielding film (MS).

[0127] Referring to FIG. 31, a shielded pixel including a light shielding film (MS) may not correspond to a second microlens (ML2). For example, unit pixels having a tetracolor filter array may include two second pixel groups (PG2), and each of the second pixel groups (PG2) may include a light shielding film (MS) or a second microlens (ML2). However, the position and arrangement of the light shielding film (MS) and the second microlens (ML2) may not be limited to those shown in FIG. 31.

[0128] Meanwhile, the arrangement and number of light shielding films (MS) may vary depending on the embodiment. The number of first shielding pixels included in the entirety of each of the image sensors (600A, 600B, 600C, 600D, 700) may be the same as the number of second shielding pixels.

[0130] FIG. 32 is a drawing for explaining a pixel array included in an image sensor according to an embodiment of the present invention.

[0131] Next, referring to FIG. 32, the pixel array (10C) may include a plurality of pixel groups (PG1, PG2), similar to the pixel array (10B) illustrated in FIG. 16, and each of the plurality of pixel groups (PG1, PG2) may include a plurality of unit pixels (PX). The pixels (PX) included in each of the pixel groups (PG1, PG2) may include a color filter of the same color. However, unlike the pixel array (10B) illustrated in FIG. 16, each of the plurality of pixel groups (PG1, PG2) included in the pixel array (10C) may include pixels (PX) in a 3×3 shape. In other words, the pixel array (10C) of the image sensor according to one embodiment of the present invention may include a color filter having an array that generates an image having a Nona pattern. For example, the pixel array (10C) of the image sensor may have a 6×6 color filter array in which red, green, green, and blue are each arranged in a 3×3 configuration. However, this is merely one embodiment, and the color filter array configured repeatedly may vary.

[0132] An image sensor according to one embodiment of the present invention can improve autofocus performance in the vertical direction of the image sensor by means of a second microlens and a light shielding film included in at least one of the unit pixels (PX) of the pixel array (10C). For example, a unit pixel (PX) including a light shielding film may be defined as a shielding pixel (SPX). Meanwhile, a plurality of pixel groups (PG1, PG2) may include a first pixel group (PG1) that does not include a shielding pixel (SPX) and a second pixel group (PG2) that includes a shielding pixel (SPX). However, this is merely one embodiment and is not limited thereto, and if the image sensor does not include a shielding pixel (SPX), the second pixel group (PG2) may be defined as a pixel group including a pixel that includes a modified second microlens to complement autofocus performance in the vertical direction.

[0133] The unit pixels (PX) included in the pixel array (10C) illustrated in FIG. 32 can be arranged to have various arrangements. Accordingly, the autofocus performance of the image sensor can be maximized.

[0135] FIG. 33 is a top view of an image sensor according to one embodiment of the present invention.

[0136] Referring to FIG. 33, an image sensor (800) according to one embodiment of the present invention may be an image sensor comprising a color filter having a color filter array. For example, the image sensor (800) may include first and second photodiodes (PD1, PD2) separated in a second direction (e.g., x direction) inside a semiconductor substrate, a device isolation film (DTI) disposed between a plurality of unit pixels (PX1, PX2, PX3, PX4), a first microlens (ML1), a second microlens (ML2) modified from the first microlens (ML1), and a light shielding film (MS). However, this is merely one embodiment and is not limited thereto. For example, the image sensor (800) may not include a light shielding film (MS) or may not include a second microlens (ML2). Additionally, the image sensor (800) illustrated in FIG. 33 shares a second microlens (ML2) at the first pixel (PX1) and the second pixel (PX2), and is illustrated as the first pixel (PX1) being a shielded pixel, but is not limited thereto.

[0138] FIGS. 34 and FIGS. 35 are simplified drawings of an electronic device including an image sensor according to an embodiment of the present invention.

[0139] Referring to FIG. 34, the electronic device (1000) may include a camera module group (1100), an application processor (1200), a PMIC (1300), and an external memory (1400).

[0140] The camera module group (1100) may include a plurality of camera modules (1100a, 1100b, 1100c). Although an embodiment in which three camera modules (1100a, 1100b, 1100c) are arranged is illustrated in the drawings, the embodiments are not limited thereto. In some embodiments, the camera module group (1100) may be modified to include only two camera modules. Also, in some embodiments, the camera module group (1100) may be modified to include n camera modules (where n is a natural number greater than or equal to 4). Also, in one embodiment, at least one of the plurality of camera modules (1100a, 1100b, 1100c) included in the camera module group (1100) may include an image sensor according to one of the embodiments described above with reference to FIGS. 1 to 32.

[0141] Hereinafter, with reference to FIG. 35, the detailed configuration of the camera module (1100b) will be described in more detail, but the following description may be applied equally to other camera modules (1100a, 1100b) according to the embodiment.

[0142] Referring to FIG. 35, the camera module (1100b) may include a prism (1105), an optical path folding element (OPFE, hereinafter referred to as "OPFE") (1110), an actuator (1130), an image sensing device (1140), and a storage unit (1150).

[0143] The prism (1105) can modify the path of light (L) incident from the outside by including a reflective surface (1107) of a light-reflecting material.

[0144] In some embodiments, the prism (1105) can change the path of light (L) incident in a first direction (X) to a second direction (Y) perpendicular to the first direction (X). Additionally, the prism (1105) can change the path of light (L) incident in the first direction (X) to a second direction (Y) perpendicular to the first direction (X) by rotating the reflective surface (1107) of the light-reflecting material in direction A around the central axis (1106) or by rotating the central axis (1106) in direction B. At this time, the OPFE (1110) can also move in a third direction (Z) perpendicular to the first direction (X) and the second direction (Y).

[0145] In some embodiments, as illustrated, the maximum rotation angle in the A direction of the prism (1105) may be 15 degrees or less in the plus (+) A direction and greater than 15 degrees in the minus (-) A direction, but the embodiments are not limited thereto.

[0146] In some embodiments, the prism (1105) can move in the plus (+) or minus (-) B direction by about 20 degrees, or between 10 and 20 degrees, or between 15 and 20 degrees, where the angle of movement can be moved by the same angle in the plus (+) or minus (-) B direction, or by a nearly similar angle within a range of about 1 degree.

[0147] In some embodiments, the prism (1105) can move the reflective surface (1106) of the light-reflecting material in a third direction (e.g., Z direction) parallel to the extension direction of the central axis (1106).

[0148] OPFE (1110) may include, for example, groups of m (where m is a natural number) optical lenses. The m lenses can be moved in a second direction (Y) to change the optical zoom ratio of the camera module (1100b). For example, when the basic optical zoom ratio of the camera module (1100b) is Z, moving the m optical lenses included in the OPFE (1110) may change the optical zoom ratio of the camera module (1100b) to 3Z or 5Z or an optical zoom ratio of 5Z or more.

[0149] The actuator (1130) can move the OPFE (1110) or the optical lens (hereinafter referred to as the optical lens) to a specific position. For example, the actuator (1130) can adjust the position of the optical lens so that the image sensor (1142) is positioned at the focal length of the optical lens for accurate sensing.

[0150] The image sensing device (1140) may include an image sensor (1142), control logic (1144), and memory (1146). The image sensor (1142) can sense an image of a sensing target using light (L) provided through an optical lens. The control logic (1144) can control the overall operation of the camera module (1100b). For example, the control logic (1144) can control the operation of the camera module (1100b) according to a control signal provided through a control signal line (CSLb).

[0151] The memory (1146) can store information necessary for the operation of the camera module (1100b), such as calibration data (1147). The calibration data (1147) may include information necessary for the camera module (1100b) to generate image data using light (L) provided from the outside. The calibration data (1147) may include, for example, information regarding the degree of rotation described above, information regarding the focal length, information regarding the optical axis, etc. If the camera module (1100b) is implemented in the form of a multi-state camera in which the focal length changes according to the position of the optical lens, the calibration data (1147) may include focal length values ​​for each position (or state) of the optical lens and information related to auto-focusing.

[0152] The storage unit (1150) can store image data sensed through the image sensor (1142). The storage unit (1150) may be placed outside the image sensing device (1140) and may be implemented in a stacked form with the sensor chip constituting the image sensing device (1140). In some embodiments, the storage unit (1150) may be implemented as an EEPROM (Electrically Erasable Programmable Read-Only Memory), but the embodiments are not limited thereto.

[0153] Referring to FIG. 34 and FIG. 35 together, in some embodiments, each of the plurality of camera modules (1100a, 1100b, 1100c) may include an actuator (1130). Accordingly, each of the plurality of camera modules (1100a, 1100b, 1100c) may include identical or different calibration data (1147) according to the operation of the actuator (1130) included therein.

[0154] In some embodiments, one of the plurality of camera modules (1100a, 1100b, 1100c) camera module (e.g., 1100b) is a camera module in the form of a folded lens including the previously described prism (1105) and OPFE (1110), and the remaining camera modules (e.g., 1100a, 1100b) may be camera modules in the form of a vertical camera module that do not include the prism (1105) and OPFE (1110), but the embodiments are not limited thereto.

[0155] In some embodiments, one of the plurality of camera modules (1100a, 1100b, 1100c) (e.g., 1100c) may be a vertical depth camera that extracts depth information using, for example, IR (Infrared Ray). In this case, the application processor (1200) may generate a 3D depth image by merging image data provided from this depth camera with image data provided from another camera module (e.g., 1100a or 1100b).

[0156] In some embodiments, at least two of the plurality of camera modules (1100a, 1100b, 1100c) may have different field of view angles. In this case, for example, the optical lenses of at least two of the plurality of camera modules (1100a, 1100b, 1100c) may be different from each other, but are not limited thereto.

[0157] Additionally, in some embodiments, the field of view of each of the plurality of camera modules (1100a, 1100b, 1100c) may be different from each other. In this case, the optical lenses included in each of the plurality of camera modules (1100a, 1100b, 1100c) may also be different from each other, but are not limited thereto.

[0158] In some embodiments, each of the plurality of camera modules (1100a, 1100b, 1100c) may be physically separated from one another. That is, instead of the plurality of camera modules (1100a, 1100b, 1100c) dividing and using the sensing area of ​​a single image sensor (1142), an independent image sensor (1142) may be placed inside each of the plurality of camera modules (1100a, 1100b, 1100c).

[0159] Referring again to FIG. 34, the application processor (1200) may include an image processing device (1210), a memory controller (1220), and an internal memory (1230). The application processor (1200) may be implemented separately from a plurality of camera modules (1100a, 1100b, 1100c). For example, the application processor (1200) and the plurality of camera modules (1100a, 1100b, 1100c) may be implemented separately from each other as separate semiconductor chips.

[0160] The image processing device (1210) may include a plurality of sub-image processors (1212a, 1212b, 1212c), an image generator (1214), and a camera module controller (1216).

[0161] The image processing device (1210) may include a plurality of sub-image processors (1212a, 1212b, 1212c) corresponding to the number of camera modules (1100a, 1100b, 1100c).

[0162] Image data generated from each camera module (1100a, 1100b, 1100c) can be provided to corresponding sub-image processors (1212a, 1212b, 1212c) via separate image signal lines (ISLa, ISLb, ISLc). For example, image data generated from camera module (1100a) can be provided to sub-image processor (1212a) via image signal line (ISLa), image data generated from camera module (1100b) can be provided to sub-image processor (1212b) via image signal line (ISLb), and image data generated from camera module (1100c) can be provided to sub-image processor (1212c) via image signal line (ISLc). Such image data transmission can be performed, for example, using a Camera Serial Interface (CSI) based on MIPI (Mobile Industry Processor Interface), but the embodiments are not limited thereto.

[0163] Meanwhile, in some embodiments, a single sub-image processor may be arranged to correspond to a plurality of camera modules. For example, the sub-image processor (1212a) and the sub-image processor (1212c) are not implemented separately as illustrated, but are integrated into a single sub-image processor, and image data provided from the camera module (1100a) and the camera module (1100c) may be selected through a selection element (e.g., a multiplexer) and then provided to the integrated sub-image processor.

[0164] Image data provided to each sub-image processor (1212a, 1212b, 1212c) may be provided to an image generator (1214). The image generator (1214) may generate an output image using image data provided from each sub-image processor (1212a, 1212b, 1212c) according to image generating information or a mode signal.

[0165] Specifically, the image generator (1214) can generate an output image by merging at least some of the image data generated from camera modules (1100a, 1100b, 1100c) having different viewing angles according to image generation information or a mode signal. Additionally, the image generator (1214) can generate an output image by selecting any one of the image data generated from camera modules (1100a, 1100b, 1100c) having different viewing angles according to image generation information or a mode signal.

[0166] In some embodiments, the image generation information may include a zoom signal (or zoom factor). Additionally, in some embodiments, the mode signal may be a signal based, for example, on a mode selected by a user.

[0167] When the image generation information is a zoom signal (zoom factor) and each camera module (1100a, 1100b, 1100c) has a different viewing angle (angle of view), the image generator (1214) can perform different operations depending on the type of zoom signal. For example, if the zoom signal is a first signal, the image data output from the camera module (1100a) and the image data output from the camera module (1100c) can be merged, and then an output image can be generated using the merged image signal and the image data output from the camera module (1100b) that was not used for merging. If the zoom signal is a second signal different from the first signal, the image generator (1214) can generate an output image by selecting one of the image data output from each camera module (1100a, 1100b, 1100c) without performing such image data merging. However, the embodiments are not limited thereto, and the method of processing image data can be modified as needed.

[0168] In some embodiments, the image generator (1214) receives multiple image data with different exposure times from at least one of a plurality of sub-image processors (1212a, 1212b, 1212c) and performs HDR (high dynamic range) processing on the multiple image data to generate merged image data with increased dynamic range.

[0169] The camera module controller (1216) can provide control signals to each camera module (1100a, 1100b, 1100c). The control signals generated from the camera module controller (1216) can be provided to the corresponding camera modules (1100a, 1100b, 1100c) through separate control signal lines (CSLa, CSLb, CSLc).

[0170] One of the plurality of camera modules (1100a, 1100b, 1100c) may be designated as a master camera (e.g., 1100b) according to image generation information including a zoom signal or a mode signal, and the remaining camera modules (e.g., 1100a, 1100c) may be designated as slave cameras. This information may be included in a control signal and provided to the corresponding camera modules (1100a, 1100b, 1100c) through separate control signal lines (CSLa, CSLb, CSLc).

[0171] The camera module operating as a master and slave may be changed according to the zoom factor or operation mode signal. For example, if the field of view of the camera module (1100a) is wider than the field of view of the camera module (1100b) and the zoom factor indicates a low zoom magnification, the camera module (1100b) may operate as a master and the camera module (1100a) may operate as a slave. Conversely, if the zoom factor indicates a high zoom magnification, the camera module (1100a) may operate as a master and the camera module (1100b) may operate as a slave.

[0172] In some embodiments, the control signal provided from the camera module controller (1216) to each camera module (1100a, 1100b, 1100c) may include a sync enable signal. For example, if the camera module (1100b) is a master camera and the camera modules (1100a, 1100c) are slave cameras, the camera module controller (1216) may transmit a sync enable signal to the camera module (1100b). The camera module (1100b) that receives this sync enable signal may generate a sync signal based on the received sync enable signal and provide the generated sync signal to the camera modules (1100a, 1100c) through a sync signal line (SSL). The camera module (1100b) and camera modules (1100a, 1100c) can be synchronized with this sync signal to transmit image data to the application processor (1200).

[0173] In some embodiments, a control signal provided from a camera module controller (1216) to a plurality of camera modules (1100a, 1100b, 1100c) may include mode information according to a mode signal. Based on this mode information, the plurality of camera modules (1100a, 1100b, 1100c) may operate in a first operation mode and a second operation mode with respect to the sensing speed.

[0174] A plurality of camera modules (1100a, 1100b, 1100c) can, in a first operating mode, generate an image signal at a first speed (e.g., generate an image signal at a first frame rate) and encode it at a second speed higher than the first speed (e.g., encode an image signal at a second frame rate higher than the first frame rate), and transmit the encoded image signal to an application processor (1200). At this time, the second speed may be 30 times or less of the first speed.

[0175] The application processor (1200) stores the received image signal, that is, the encoded image signal, in a memory (1230) provided internally or in a storage (1400) outside the application processor (1200), and subsequently reads the encoded image signal from the memory (1230) or the storage (1400) to decode it, and can display image data generated based on the decoded image signal. For example, a corresponding sub-processor among a plurality of sub-processors (1212a, 1212b, 1212c) of the image processing device (1210) can perform decoding, and can also perform image processing on the decoded image signal.

[0176] A plurality of camera modules (1100a, 1100b, 1100c) can generate an image signal at a third speed lower than a first speed in a second operation mode (e.g., generate an image signal at a third frame rate lower than a first frame rate) and transmit the image signal to an application processor (1200). The image signal provided to the application processor (1200) may be an unencoded signal. The application processor (1200) may perform image processing on the received image signal or store the image signal in memory (1230) or storage (1400).

[0177] The PMIC (1300) can supply power, such as power voltage, to each of the plurality of camera modules (1100a, 1100b, 1100c). For example, the PMIC (1300) can supply first power to the camera module (1100a) through a power signal line (PSLa), supply second power to the camera module (1100b) through a power signal line (PSLb), and supply third power to the camera module (1100c) through a power signal line (PSLc), under the control of the application processor (1200).

[0178] The PMIC (1300) can generate power corresponding to each of the plurality of camera modules (1100a, 1100b, 1100c) and adjust the power level in response to a power control signal (PCON) from the application processor (1200). The power control signal (PCON) may include power adjustment signals for each operating mode of the plurality of camera modules (1100a, 1100b, 1100c). For example, the operating mode may include a low power mode, and in this case, the power control signal (PCON) may include information about the camera module operating in the low power mode and the power level being set. The power levels provided to each of the plurality of camera modules (1100a, 1100b, 1100c) may be the same or different from each other. Additionally, the power level may be changed dynamically.

[0180] The present invention is not limited by the embodiments described above and the attached drawings, but is intended to be limited by the appended claims. Accordingly, various substitutions, modifications, and changes may be made by those skilled in the art within the scope of the technical concept of the present invention as described in the claims, and such are also to be considered to fall within the scope of the present invention. Explanation of the symbols

[0182] 1, 100, 200, 300, 400, 500, 600, 700, 800, 900: Image sensor 20: Control logic circuit 30: Memory cell array 40: Page buffer section 50: Voltage generator 60: Row decoder CELL: Memory cell area PERI: Peripheral circuit area 101: First semiconductor substrate 102: Second semiconductor substrate 104: First conductive layer 105: Second Conductive Layer CSL: Common Source Line THV: Connection LM1: Lower metal wiring LM2: Upper metal wiring RL: Reference line

Claims

Claim 1 An image sensor comprises: a first pixel set including first unit pixels arranged in two consecutive rows and two consecutive columns; a second pixel set including second unit pixels arranged in two consecutive rows and two consecutive columns, wherein the second unit pixels include a first shielding pixel; a third pixel set including third unit pixels arranged in two consecutive rows and two consecutive columns, wherein the third unit pixels include a second shielding pixel; and a fourth pixel set including fourth unit pixels arranged in two consecutive rows and two consecutive columns, wherein the fourth unit pixels include a third shielding pixel. The unit pixels included in each of the first to fourth pixel sets comprise two photodiodes separated from each other by a first direction on a plane, and half of each of the first to third shielding pixels is blocked by a first to third light shielding film having a second direction intersecting the first direction on the plane, and between the first shielding pixel and the second shielding pixel, N unit pixels are arranged in the second direction on the plane, and between the second shielding pixel and the third shielding pixel, N unit pixels are arranged in the second direction on the plane (N is a natural number greater than 2), the second direction is perpendicular to the first direction on the plane, and the first to fourth pixel sets are arranged in the second direction on the plane. Claim 2 In claim 1, the first unit pixels are image sensors that receive light in the green wavelength range. Claim 3 In paragraph 2, the second unit pixels are image sensors that receive light in the green wavelength range. Claim 4 In paragraph 3, the third unit pixels are image sensors that receive light in the green wavelength range. Claim 5 In paragraph 3, the second unit pixels further include a fourth shielding pixel blocked by a fourth light shielding film, and the fourth shielding pixel is an image sensor adjacent to the first shielding pixel. Claim 6 An image sensor according to claim 5, wherein the third unit pixels further include a fifth shielding pixel blocked by a fifth light shielding film, the fifth shielding pixel is adjacent to the second shielding pixel, and N unit pixels are arranged in the second direction on the plane between the fourth shielding pixel and the fifth shielding pixel. Claim 7 In claim 6, the above half is an image sensor that is above the line passing through the center of each of the first to third shielded pixels in the second direction on the plane. Claim 8 In claim 7, the first pixel set is an image sensor comprising four micro-lenses. Claim 9 In claim 8, the second pixel set is an image sensor comprising four micro-lenses. Claim 10 In claim 6, the image sensor is lower with respect to the line passing through the center of each of the first to third shielded pixels in the second direction on the plane.

Images