Hyperbaric clean system and method for cleaning semiconductor chamber components and non-transitory computer readable medium

Abstract

This document provides embodiments of methods and cleaning systems for cleaning components used in substrate processing equipment. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a cleaning chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the cleaning chamber includes one or more clamps in its internal space for holding at least one component to be cleaned, and wherein the cleaning chamber includes a heater for heating the internal space; and an expansion chamber fluidly coupled to the cleaning chamber via a release line for emptying the cleaning chamber, wherein the release line includes a release valve for selectively opening or closing a flow path between the expansion chamber and the cleaning chamber, and wherein the expansion chamber includes a condenser and a vacuum port.

Description

[Technical Field]

[0001] The embodiments of this disclosure are generally related to substrate processing equipment. [Previous Technology]

[0002] Components used in processing chambers for semiconductor substrate processing are typically cleaned before being installed in the processing chamber. However, parts with complex geometries can be difficult to clean due to small openings and other hard-to-reach areas. Conventional methods for cleaning components include spraying or agitation, which may be unsuitable for cleaning parts with complex geometries and present additional challenges in removing chemical byproducts.

[0003] Therefore, the inventors have proposed a method and apparatus for strengthening the cleaning of chamber components used in semiconductor substrate processing equipment. [Summary of the Invention]

[0004] Embodiments of methods and apparatus for cleaning components used in substrate processing equipment are provided herein. In some embodiments, a cleaning system for cleaning components used in substrate processing equipment includes: a boiler having a heater configured to heat a fluid; a cleaning chamber fluidly coupled to the boiler via a gas line, wherein the cleaning chamber includes one or more clamps in an internal space therein for holding at least one component to be cleaned, and wherein the cleaning chamber includes a heater for heating the internal space; and an expansion chamber fluidly coupled to the cleaning chamber via a release line for emptying the cleaning chamber, wherein the release line includes a release valve for selectively opening or closing a flow path between the expansion chamber and the cleaning chamber, and wherein the expansion chamber includes a condenser for cooling the expansion chamber, and a vacuum port configured to couple the expansion chamber to a vacuum pump.

[0005] In some embodiments, a method for cleaning components for a substrate processing apparatus includes: loading at least one component to be cleaned into a cleaning chamber; heating a fluid in a boiler coupled to the cleaning chamber to a first temperature; transferring the heated fluid to the cleaning chamber to cover the at least one component; increasing a pressure in the cleaning chamber to a critical pressure; and when the critical pressure is reached, opening a release valve arranged in a release line that couples the fluid of the cleaning chamber to the expansion chamber to boil the fluid and drain the boiled fluid from the cleaning chamber into the expansion chamber.

[0006] In some embodiments, a non-transitory computer-readable medium has instructions stored thereon that, when executed by a processor, perform a method for cleaning one of the components for a substrate processing apparatus, the method comprising: loading at least one component to be cleaned into a cleaning chamber; heating a fluid in a boiler coupled to the cleaning chamber to a first temperature; transferring the heated fluid to the cleaning chamber to cover the at least one component; increasing a pressure in the cleaning chamber to a critical pressure; and when the critical pressure is reached, opening a release valve arranged in a release line that couples the cleaning chamber to the expansion chamber to boil the fluid, and draining the boiled fluid from the cleaning chamber into the expansion chamber.

[0007] The following describes other and further embodiments of this disclosure.

Implementation Method

[0013] Embodiments of a high-pressure cleaning method and apparatus for cleaning components used in substrate processing equipment are provided herein. The components may be any component suitable for use in substrate processing equipment, for example, but not limited to, gas distribution plates, spray heads, processing kit components, chamber liners, or the like. The components may also be any component used in substrate processing equipment that has a complex geometry and is difficult to clean using conventional cleaning methods.

[0014] The novel cleaning system generally comprises a boiler fluidly coupled to a cleaning chamber and a cleaning chamber fluidly coupled to an expansion chamber. A liquid is heated to a suitable temperature in the boiler. Hot steam or fluid from the boiler is introduced into the cleaning chamber to moisten any components disposed within it. The cleaning chamber is pressurized to a high internal pressure. The expansion chamber is maintained at a lower pressure, such as atmospheric pressure or a vacuum. When a release valve disposed between the cleaning chamber and the expansion chamber opens, all moisture collected on the components rapidly boils or cavitates due to the rapid pressure drop and is vented from the cleaning chamber into the expansion chamber along with unwanted particles or impurities on the components, thus cleaning the components. This process can be repeated until the desired cleanliness or desired particle count is achieved on the components.

[0015] The cleaning system provided herein advantageously controls thermal energy by controlling the operating temperature. Furthermore, the dynamics of the cleaning chamber can be advantageously controlled by adjusting the opening size of the release valve. The control of the thermal energy and dynamics of the cleaning chamber significantly enhances the accuracy, efficiency, and reliability of the cleaning process.

[0016] Figure 1, according to certain embodiments of this disclosure, depicts a schematic view of a cleaning system 100 for cleaning components used in a substrate processing apparatus. The cleaning system 100 includes a boiler 110 fluidly coupled to a cleaning chamber 120 to transfer fluid to the cleaning chamber. The cleaning system 100 includes an expansion chamber 130 fluidly coupled to the cleaning chamber 120 via a release line 102 to rapidly evacuate moisture and unwanted particles from the cleaning chamber 120.

[0017] The boiler 110 is a generally closed container having a heater 112 configured to heat a fluid disposed within the boiler 110. The fluid may be supplied or derived from a liquid supply 104 coupled to the boiler 110. A supply valve 148 may be disposed between the liquid supply 104 and the boiler 110 to control the flow of liquid from the liquid supply 104 to the boiler 110. The liquid supply 104 may supply a suitable liquid, such as water or deionized water. The boiler 110 may heat the liquid to produce steam. For example, the boiler 110 may heat the liquid to a temperature of about 300 degrees Fahrenheit to about 550 degrees Fahrenheit. In some embodiments, a first temperature sensor 114 is coupled to the boiler 110 to measure the temperature inside the boiler 110. In some embodiments, a first pressure sensor 111 is coupled to the boiler 110 to measure the pressure inside the boiler 110.

[0018] In some embodiments, boiler 110 is coupled to cleaning chamber 120 via gas line 103 to supply steam to cleaning chamber 120 to saturate or cover one or more components disposed in cleaning chamber 120 to be cleaned. In some embodiments, gas line 103 extends from the upper portion of boiler 110 or the cover of boiler 110. In some embodiments, gas line 103 includes gas line valve 152 to control the flow of gas through gas line 103. In some embodiments, gas line 103 includes filter 154 configured to reduce particulate contamination from boiler 110 through gas line 103 to cleaning chamber 120. In some embodiments, filter 154 is disposed between gas line valve 152 and boiler 110.

[0019] The cleaning system 100 may also advantageously allow the introduction of treatment gases during the cleaning process to enhance or mitigate material surface conditions in a completely dry state. In some embodiments, gas line 103 includes a second gas line valve 155 for mixing one or more treatment gases from treatment gas supplier 160 through treatment gas supply line 159 into gas line 103. In some embodiments, the second gas line valve 155 is a three-way valve. In some embodiments, the second gas line valve 155 is arranged downstream of gas line valve 152. Treatment gas supplier 160 may include one or more treatment gases suitable for performing drying, passivation, blending, or similar processes. For example, treatment gas supplier 160 may include one or more of the following: nitrogen (N2), oxygen (O2), nitrogen trifluoride (NF3), ozone (O3), or ammonia (NH3).

[0020] In some embodiments, a liquid line 118 extends from boiler 110 to cleaning chamber 120 to saturate or cover one or more components disposed in cleaning chamber 120 with liquid from boiler 110. Liquid line 118 may include a liquid line valve 115 to control the flow of liquid through liquid line 118. In some embodiments, liquid line 118 extends from a lower portion of boiler 110. In some embodiments, cleaning chamber 120 is coupled to boiler 110 via both gas line 105 and liquid line 118. Boiler 110 may include a drain line 117 coupled to a system manifold (not shown) having a first drain valve 113 for draining liquid disposed in boiler 110.

[0021] The cleaning chamber 120 is a generally closed container configured to hold at least one component to be cleaned. The cleaning chamber 120 may be sized to accommodate at least one component 212 disposed therein. In some embodiments, the cleaning chamber 120 includes a heater 124 configured to heat the internal space of the cleaning chamber 120. The cleaning chamber 120 may include a second drain line 125 coupled to a drain pipe (not shown) having a second drain valve 127 for draining liquid disposed in the cleaning chamber 120. Figure 2 depicts a simplified schematic cross-sectional view of the cleaning chamber according to certain embodiments of this disclosure. The cleaning chamber 120 includes a chamber body 202 and a cover 204 coupled to the chamber body 202 to at least partially define the internal space 210 of the cleaning chamber 120. The heater 124 may be disposed inside the internal space 210, or, as depicted in Figure 2, may be disposed outside the internal space. Heater 124 may include any suitable heating element, such as a heater sheath, an impedance heating element, a heater rod, or the like. Heater 124 is configured to maintain or increase the temperature of heated fluid 230 disposed in cleaning chamber 120. In use, heated fluid 230, in the form of steam, heated liquid, or a combination of steam and heated liquid, covers at least one component 212 as droplets 232 or moisture. In some embodiments, a second temperature sensor 126 is coupled to cleaning chamber 120 to measure the temperature inside cleaning chamber 120. In some embodiments, a second pressure sensor 128 is coupled to cleaning chamber 120 to measure the pressure inside cleaning chamber 120.

[0022] The chamber body 202 may include a through-hole or opening to facilitate the transfer of at least one component 212 to be cleaned into and out of the interior space 210. In some embodiments, the cleaning chamber 120 includes a door 208 relative to a sidewall of the chamber body 202, configured to selectively open or close for transferring at least one component 212 into and out of the interior space 210. In some embodiments, the cleaning chamber 120 includes a viewing element 218 for observing at least one component 212. In some embodiments, the viewing element 218 is coupled to or disposed in a cover 204. In some embodiments, the viewing element 218 is a viewing through-hole or a camera. In some embodiments, the cover 204 includes a gas inlet 226 coupled to at least one of a gas line 103 or a liquid line 118. Alternatively, the cover 204 may include two gas inlets 226 coupled to both the gas line 103 and the liquid line 118.

[0023] The cleaning chamber 120 may include suitable supports for holding or supporting at least one component 212. In some embodiments, the suitable supports may include one or more clamps 216 disposed within the interior space 210. In some embodiments, the one or more clamps 216 may include one or more retainers 222 extending from the base plate 214 of the chamber body 202, wherein at least one component is configured to rest on one or more retainers 222. In some embodiments, the one or more retainers 222 may include a single support.

[0024] In some embodiments, one or more clamps 216 include one or more wall supports 220 extending from the sidewall of the chamber body 202. In some embodiments, one or more wall supports 220 include a plurality of wall supports spaced apart from the base plate 214 along the chamber body 202 at a common vertical height. In some embodiments, one or more wall supports 220 include a continuous ring along the chamber body. In some embodiments, one or more wall supports 220 may be arranged along multiple vertically spaced rows, wherein each row is configured to hold at least one component 212 (Figure 2 depicts two vertically spaced rows). Thus, one or more clamps 216 may be configured to hold multiple components in a vertically spaced orientation. Although one or more clamps 216 are depicted in Figure 2 as one or more wall supports 220 or one or more retainers 222, the cleaning chamber 120 may include any suitable structure, such as hooks, shelves, protrusions, or the like, for holding at least one component 212.

[0025] Referring back to Figure 1, the return line 156 may extend from the cleaning chamber 120 to the boiler 110 to recover excess liquid from the cleaning chamber 120 to the boiler 110. The return line 156 may include a return line valve 158 for controlling the flow through the return line 156. In some embodiments, the return line 156 and the second discharge line 125 are coupled to the base plate 214 of the chamber body 202.

[0026] A release line 102 extending between the clean chamber 120 and the expansion chamber 130 facilitates the evacuation of gas disposed in the internal space 210 of the clean chamber 120. The release line 102 includes a release valve 108 to selectively open or close a flow path between the expansion chamber 130 and the clean chamber 120. In some embodiments, the release valve 108 is a control valve. In some embodiments, the release valve 108 is an on / off valve, and the release line 102 further includes a flow control element 140. In some embodiments, the flow control element 140 includes at least one of a fixed orifice, a variable orifice, or a metering valve for controlling flow through the release line 102. In some embodiments, the flow control element 140 is disposed downstream of the release valve 108.

[0027] The expansion chamber 130 is a generally closed container, sized to vent high-pressure gas from the clean chamber 120. The expansion chamber 130 is configured to maintain a negative pressure relative to the clean chamber 120 during venting. For example, the negative pressure can be maintained by increasing the internal space of the expansion chamber 130, reducing the temperature of the expansion chamber 130, or reducing the pressure of the expansion chamber 130. In some embodiments, the expansion chamber 130 has a larger internal space than the clean chamber 120. In some embodiments, the expansion chamber 130 includes a vacuum pump 132 coupled to the expansion chamber to adjust the pressure inside the expansion chamber 130. In some embodiments, the vacuum pump 132 is configured to establish a vacuum pressure inside the expansion chamber 130, advantageously creating a larger pressure difference between the expansion chamber 130 and the clean chamber 120.

[0028] In some embodiments, the expansion chamber 130 is coupled to a condenser 134 configured to cool the expansion chamber 130. Cooling the expansion chamber 130 reduces the internal space required for the expansion chamber while maintaining a negative pressure relative to the cleaning chamber 120. The condenser 134 can also advantageously cool the expansion chamber 130 after hot gases have been vented from the cleaning chamber 120, reducing cooling time on at least one component 212 between cleaning cycles and increasing cleaning efficiency. The expansion chamber 130 may include a third discharge line 135 coupled to a drain line (not shown), having a third discharge valve 136 for discharging liquid disposed in the expansion chamber 130. In some embodiments, the first discharge line 117, the second discharge line 125, and the third discharge line 135 are coupled downstream to a common drain line.

[0029] In some embodiments, the cleaning system 100 includes a condensed particle counter (CPC) 116 disposed downstream of the cleaning system 120 and upstream of the expansion chamber 130. The CPC 116 is configured to measure a portion of the particle count of the gas vented from the cleaning chamber 120. In some embodiments, the CPC 116 is disposed along a bypass line 163 extending from the release line 102 to the expansion chamber 130. In some embodiments, a three-way valve 106 disposed mating with the release line 102 can divert some flow from the release line 102 to the bypass line 163.

[0030] Controller 180 controls the operation of cleaning system 100 using direct control of boiler 110, cleaning chamber 120, and expansion chamber 130, or via a computer (or controller) associated with each of boiler 110, cleaning chamber 120, and expansion chamber 130. During operation, controller 180 can collect and provide feedback data from cleaning system 100 to optimize its performance. Controller 180 generally includes a central processing unit (CPU) 182, memory 184, and support circuitry 186. CPU 182 can be any type of general-purpose computer processor and can be used in industrial settings. Support circuitry 186 is conventionally coupled to CPU 182 and may include cache, clock circuitry, input / output subsystems, power supplies, and the like. Software routines, such as those described below, can be stored in memory 184 and, when executed by CPU 182, transform CPU 182 into a dedicated computer (controller 180). Software routines can also be stored and / or executed by a second controller (not shown) located remotely from the cleaning system 100.

[0031] Memory 184 is in the form of a computer-readable storage medium and contains instructions that, when executed by CPU 182, facilitate the operation of cleaning system 100. The instructions in memory 184 are in the form of a program product, such as a program implementing the methods of this principle. The program code may conform to any of several different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of a program (including the methods described herein). The illustrated computer-readable storage medium includes, but is not limited to: non-writable storage media (e.g., read-only memory devices in a computer, such as CD-ROM discs readable by a CD drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and writable storage media (e.g., floppy disks in a cartridge drive or hard disk drive, or any type of solid-state random access semiconductor memory), on which variable information is stored. When a computer-readable instruction carrying the function of guiding the methods described herein is executed, such computer-readable storage medium is in the manner of this principle.

[0032] Figure 3, according to certain embodiments of this disclosure, depicts a flowchart of a method 300 for cleaning a component (e.g., at least one component 212) used in a substrate processing apparatus. The substrate processing apparatus may be a deposition chamber, an etching chamber, a cleaning chamber, or the like. At 302, method 300 includes loading at least one component to be cleaned into a cleaning chamber (e.g., cleaning chamber 120). The at least one component may be at least one of the following: a gas distribution plate, a spray head, a processing kit component, a chamber liner, or the like.

[0033] At 304, method 300 includes heating fluid in a boiler (e.g., boiler 110) fluidly coupled to a clean chamber to a first temperature. In some embodiments, the first temperature is about 300 to about 550 degrees Fahrenheit. The fluid may be supplied to the boiler via a liquid supply (e.g., liquid supply 104). The liquid may be, for example, water.

[0034] At 306, method 300 includes transferring heated fluid to a cleaning chamber to cover at least one component. In some embodiments, the heated fluid is transferred as vapor through a gas line valve (e.g., gas line valve 152). In some embodiments, the heated fluid is transferred as heated liquid through a liquid line valve (e.g., liquid line valve 115). In some embodiments, once the desired amount of heated fluid has been transferred to the cleaning chamber, at least one of the liquid line valve and the gas line valve is closed.

[0035] At 308, method 300 includes increasing the pressure in the cleaning chamber to a critical pressure. In some embodiments, the critical pressure is about 100 to about 450 pounds (psi) per square inch. In some embodiments, the pressure in the cleaning chamber may be increased by heating the cleaning chamber using a heater (e.g., heater 124).

[0036] At 310, method 300 includes, when a critical pressure is reached, opening a release valve arranged in a release line coupling the clean chamber fluid to the expansion chamber to boil the fluid and drain the boiled fluid from the clean chamber into the expansion chamber. In some embodiments, the release line includes a flow control element (e.g., flow control element 140) to control the pressure released from the clean chamber, and thus control the rate at which the boiled fluid is drained. In some embodiments, the boiled fluid is drained from the clean chamber into the expansion chamber over a period of about 5 milliseconds to about 10 seconds. In some embodiments, prior to opening the release valve, the internal pressure of the expansion chamber is reduced to a vacuum pressure to establish a larger pressure differential between the clean chamber and the expansion chamber.

[0037] In some embodiments, the release valve is closed after the boiled fluid is emptied from the cleaning chamber. In some embodiments, adjustment is performed on at least one component in the cleaning chamber after the boiled fluid is emptied from the cleaning chamber. In some embodiments, adjusting at least one component includes performing at least one of a drying treatment, passivation treatment, or blending treatment by introducing a suitable treatment gas for the desired treatment through a treatment gas supplier (e.g., treatment gas supplier 160). For example, a suitable treatment gas may include one or more of the following: nitrogen (N2), oxygen (O2), nitrogen trifluoride (NF3), ozone (O3), or ammonia (NH3).

[0038] In some embodiments, a particle counter (e.g., CPC 116) disposed downstream of the cleaning chamber is used to detect the number of particles flowing through. In some embodiments, at 312, method 300 may optionally be repeated at 306, 308, and 310 until, for example, until the desired number of particles detected by the particle counter is or below a predetermined amount. That is, in some embodiments, method 300 includes transmitting additionally heated fluid to the cleaning chamber, covering at least one component with the additionally heated fluid, increasing the pressure in the cleaning chamber to a critical pressure, and reopening a release valve when the critical pressure is reached. Once at least one component has been adequately cleaned or treated, at least one component can be removed from the cleaning chamber and mounted on a suitable substrate for assembly.

[0039] Although the above describes the embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope. [Simplified Explanation of the Diagram]

[0008] The embodiments of the present disclosure, which have been briefly summarized above and discussed in more detail below, can be understood by referring to the illustrated embodiments of the present disclosure depicted in the accompanying drawings. However, the accompanying drawings only illustrate general embodiments of the present disclosure and should therefore not be considered as a limitation of scope, as other embodiments with equivalent effects are permissible with respect to the present disclosure.

[0009] Figure 1, according to certain embodiments of the present disclosure, depicts a schematic view of a cleaning system for cleaning components used in a substrate processing apparatus.

[0010] Figure 2 depicts a schematic cross-sectional view of a cleaning chamber according to certain embodiments of the present disclosure.

[0011] Figure 3 depicts a flowchart of a method for cleaning components used in a substrate processing apparatus, according to certain embodiments of the present disclosure.

[0012] To facilitate understanding, the same element symbols have been used as much as possible to represent the same elements in the common symbols. The symbols are not drawn to scale and are simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further explanation. [Biomaterial Storage]

[0041] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A cleaning system for cleaning components used in a substrate processing apparatus, comprising: a boiler having a heater configured to heat a fluid; a cleaning chamber fluidly coupled to the boiler via a gas line and a liquid line, wherein the cleaning chamber includes one or more clamps in an internal space therein for holding at least one component to be cleaned, and wherein the cleaning chamber includes a heater for heating the internal space; and an expansion chamber fluidly coupled to the cleaning chamber via a release line for emptying the cleaning chamber, wherein the release line includes a release valve for selectively opening or closing a flow path between the expansion chamber and the cleaning chamber, and wherein the expansion chamber includes a condenser for cooling the expansion chamber, and a vacuum port configured to couple the expansion chamber to a vacuum pump.

2. The cleaning system as described in claim 1 further includes a process gas supply line coupled to the gas line via a three-way valve.

3. The cleaning system as claimed in claim 1, wherein the release valve is an on-off valve, and the release line further includes at least one of a fixed orifice, a variable orifice, or a metering valve for controlling a flow through the release line.

4. The cleaning system as described in claim 1, wherein the release valve is a control valve.

5. The cleaning system as claimed in claim 1 further includes a coagulated particle counter (CPC) disposed downstream of the cleaning chamber and upstream of the expansion chamber.

6. The cleaning system as described in any one of claims 1 to 5 further includes a filter disposed in the gas line between the boiler and the cleaning chamber, and configured to reduce particulate contamination from the boiler to the cleaning chamber.

7. The cleaning system as described in any one of claims 1 to 5 further includes a liquid line extending from the boiler to the cleaning chamber.

8. The cleaning system as claimed in any one of claims 1 to 5, wherein the expanded chamber has an internal space that is larger than the cleaning chamber.

9. The cleaning system as described in any one of claims 1 to 5 further includes a vacuum pump coupled to the expanded chamber to establish a vacuum pressure.

10. The cleaning system as described in any one of claims 1 to 5 further includes an inspection port or camera coupled to the cleaning chamber for observing the at least one component.

11. A method for cleaning components for a substrate processing apparatus, comprising the steps of: loading at least one component to be cleaned into a cleaning chamber; heating a fluid in a boiler coupled to the cleaning chamber to a first temperature to generate a combination of steam and heated fluid; transferring the steam and heated fluid to the cleaning chamber to cover the at least one component; increasing a pressure in the cleaning chamber to a threshold pressure; and when the threshold pressure is reached, opening a release valve disposed in a release line coupled to the fluid in the cleaning chamber to an expansion chamber to boil the fluid and drain the boiled fluid from the cleaning chamber into the expansion chamber.

12. The method as described in claim 11, wherein at least one of the following is true: the first temperature is about 300 to about 550 degrees Fahrenheit, or the critical pressure is about 100 to about 450 pounds per square inch (psi).

13. The method as claimed in claim 11, wherein the at least one component is at least one of the following: a gas distribution plate, a spray head, a treatment kit component, or a chamber liner.

14. The method as described in claim 11 further comprises the step of: using a particle counter downstream of the cleaning chamber to detect a number of particles flowing through.

15. The method as described in any one of claims 11 to 14, further comprising the steps of: closing the release valve after draining the boiled fluid from the cleaning chamber; transferring additional heated fluid to the cleaning chamber to cover the at least one component; increasing the pressure in the cleaning chamber to the critical pressure; and reopening the release valve when the critical pressure is reached.

16. The method as described in any one of claims 11 to 14 further comprises the step of: after evacuating the boiled fluid from the cleaning chamber, adjusting the at least one component in the cleaning chamber, wherein adjusting the at least one component comprises performing at least one of: a drying treatment, a passivation treatment, or a blending treatment.

17. The method as described in any one of claims 11 to 14, further comprising the step of reducing an internal pressure in the expanded chamber to a vacuum pressure prior to opening the release valve.

18. The method as described in any one of claims 11 to 14, wherein the boiling fluid is emptied from the cleaning chamber into the expansion chamber over a period of about 5 milliseconds to about 10 seconds.

19. A non-transitory computer-readable medium having instructions stored thereon that, when executed by a processor, perform a method for cleaning one of the components for a substrate processing apparatus, the method comprising the steps of: loading at least one component to be cleaned into a cleaning chamber; heating a fluid in a boiler coupled to the cleaning chamber to a first temperature to generate a combination of steam and heated fluid; transferring the steam and heated fluid to the cleaning chamber to cover the at least one component; increasing a pressure in the cleaning chamber to a critical pressure; and when the critical pressure is reached, opening a release valve arranged in a release line that couples the cleaning chamber to an expansion chamber to boil the fluid and drain the boiled fluid from the cleaning chamber into the expansion chamber.

20. The non-transitory computer-readable medium as described in claim 19, wherein the boiling fluid is emptied from the clean chamber into the expansion chamber over a period of approximately 5 milliseconds to approximately 10 seconds.

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