Thin vapor chamber

Abstract

A thin vapor chamber includes a first plate, a second plate, and multiple support structures. The first plate has a first plate-portion and a first frame-portion surrounding the first plate-portion. The first frame-portion has a first accommodation area facing the first plate-portion, and a first capillary layer. The second plate is stacked on the first plate and has a second plate-portion and a second frame-portion surrounding the second plate-portion. The second frame-portion has a second accommodation area corresponding to the first accommodation area and a second capillary layer in the second accommodation area. The support structures are in the first and second accommodation areas and abut against the first and second capillary layers. The first and second accommodation areas are formed by etching. The sum of the first and second accommodation areas is between 2 / 3 and 3 / 4 of the sum of the thicknesses of the first and second plates.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a thermal conductive heat dissipation component, particularly relates to an improved structure of a thin vapor chamber.DESCRIPTION OF RELATED ART

[0002] Related-art thin vapor chambers such as ultra-thin heat dissipation plates or vapor chambers with a thickness of approximately 1mm are generally designed to meet the requirements of supporting internal vapor spaces and facilitating capillary action. In this design, support pillars are formed within an upper plate of the heat dissipation plate by etching in order to create vapor spaces or channels between the pillars, and vapor spaces are formed in a lower plate of the heat dissipation plate to accommodate the capillary structure. While this design achieves reduced thickness, it also eliminates the capillary structure at the upper plate, thus making it less than ideal.

[0003] In view of the deficiencies of the related art, the present disclosure conducted researches based on the existing technologies and the application of theories, and finally developed an improved structure of a thin vapor chamber in accordance with the present disclosure to overcome the deficiencies of the related art.SUMMARY OF THE DISCLOSURE

[0004] The primary objective of the present disclosure is to provide an improved structure of a thin vapor chamber, in which an optimal ratio of the thickness of the heating plate to the size of the steam space is set to achieve the effect of expanding the steam space or channel.

[0005] To achieve the aforementioned objective, the present disclosure provides an improved structure of a thin vapor chamber, which includes a first plate, a second plate, and a plurality of support structures. The first plate has a first plate-portion, and a first frame-portion surrounding the first plate-portion, and the first frame-portion protrudes into the first plate-portion and has a first accommodation area, in which a first capillary layer is provided for attaching the first plate-portion. The second plate is stacked on top of the first plate, and has a second plate-portion and a second frame-portion surrounding the second plate-portion. The second frame-portion protrudes into the second plate-portion and has a second accommodation area corresponding to the first accommodation area. A second capillary layer is provided in the second accommodation area and attached to the second plate-portion. The support structures are located in the first and second accommodation areas, and abut against the first and second capillary layers. Both the first accommodation area and the second accommodation area are formed by etching, and the depth of etching falls within a range from 2 / 3 to 3 / 4 of the sum of the thickness of the first plate and the thickness of the second plate.BRIEF DESCRIPTION OF THE DRAWINGS

[0006] FIG. 1 is a perspective assembled view of the present disclosure;

[0007] FIG. 2 is an exploded view of the present disclosure;

[0008] FIG. 3 is another perspective view of a second plate of the present disclosure;

[0009] FIG. 4 is a top view showing the internal structure of the present disclosure;

[0010] FIG. 5 is a cross-sectional view of the present disclosure; and

[0011] FIG. 6 is a schematic view showing a using status of the present disclosure.DETAILED DESCRIPTION

[0012] The detailed description and technical contents of the present disclosure are illustrated with reference to the accompanying drawings, which are intended for the illustrative purposes only, but not intended for limiting the disclosure.

[0013] With reference to FIGS. 1 and 2 for the perspective assembled view and the exploded view of the present disclosure respectively, the present disclosure provides an improved structure of a thin vapor chamber, which includes a first plate 1, a second plate 2, and a plurality of support structures 3.

[0014] With reference also to FIG. 5, the first plate 1 is made of a material with good thermal conductivity, such as copper or aluminum, and the first plate 1 has a first plate-portion 10 and a first frame-portion 11 surrounding the first plate-portion 10. The first frame-portion 11 protrudes inwardly toward the first plate-portion 10 and has a first accommodation area 100. The first accommodation area 100 is formed by etching, and a first capillary layer 101 attached to the first plate-portion 10 is provided in the first accommodation area 100.

[0015] With reference also to FIGS. 2 and 5, the second plate 2 is also made of a material with good thermal conductivity, such as copper or aluminum, and the second plate 2 has a second plate-portion 20 and a second frame-portion 21 surrounding the second plate-portion 20. The second frame-portion 21 protrudes inwardly toward the second plate-portion 20 and has a second accommodation area 200. The second accommodation area 200 is also formed by etching, and a second capillary layer 201 to be attached to the second plate-portion 20 is provided in the second accommodation area 200.

[0016] In FIG. 5, the first plate 1 and the second plate 2 are stacked vertically with the first accommodation area 100 corresponding to the second accommodation area 200 to achieve the effect of sealing and bonding the first frame-portion 11 and the second frame-portion 21 through this stacking arrangement. In the embodiment of the present disclosure, the first frame portion 11 includes an inner frame 110 and an outer frame 111, with a solder groove 112 formed between the inner frame 110 and the outer frame 111. The solder groove 112 is filled with solder to seal and bond the first frame portion 11 and the second frame portion 21.

[0017] The support structures 3 are made of a solid copper material or a porous material. In some embodiments, the support structures are made of a solid copper material covered with a capillary material. When the first plate 1 and the second plate 2 are superimposed, they are distributed within the first accommodation area 100 and second accommodation area 200, and abut against the first capillary layer 101 and second capillary layer 201.

[0018] In the embodiment of the present disclosure as shown in FIG. 4, the first plate 1 and the second plate 2 share an evaporation area H and two condensation areas C. The evaporation area H is designed to be attached to a heat source 5 (as shown in FIG. 6), while the two condensation areas C extend respectively from two sides of the evaporation area H and internally communicate with each other through the first accommodation area 100 and the second accommodation area 200. In some embodiments, at least one strip-shaped capillary structure 4 is further provided, and the strip-shaped capillary structure 4 is arranged within the first accommodation area 100 and the second accommodation area 200, and extended from the evaporation area H to any one of the condensation areas C to serve as a return path for the condensed working fluid (not shown in the figure). As shown in FIG. 6, a plurality of fins 6 are installed outside the two condensation areas C to assist in cooling or heat dissipation.

[0019] In FIG. 5, the present disclosure primarily addresses the limitation of the overall thickness of a thin vapor chamber and expands the thickness d of the internal vapor space (having the first accommodation area 100 and the second accommodation area 200). This allows for the separate provision of a first capillary layer 101 within the first plate portion 10 and a second capillary layer 201 within the second plate portion 20. By leveraging the capillary action within both the first plate 1 and second plate 2, this design accelerates the return flow of the condensed working fluid (not shown in the figure) from the condensation area C back to the evaporation area H. Consequently, the present disclosure enhances thermal dissipation efficiency, making the thin vapor chamber suitable for high-wattage heat dissipation applications.

[0020] In an example as shown in FIG. 5, the thickness D of the thin vapor chamber (which is the sum of the thickness of the first plate 1 and the thickness of the second plate 2) is approximately 1mm, and the present disclosure utilizes an etching process to form the first accommodation area 100 and the second accommodation area 200 on the first plate 1 and the second plate 2, respectively, to effectively control the thickness D1 of the first plate portion 10 and the thickness D2 of the second plate portion 20 within a range from 0.12 mm to 0.15 mm. Therefore, a total vapor space of at least 0.7 mm (formed by the first accommodation area 100 and the second accommodation area 200) is achieved with a thickness d, which is equivalent to an etching depth between 2 / 3 and 3 / 4 of the thickness D of the thin vapor chamber (i.e., the sum of the thickness of the first plate 1 and the thickness of the second plate 2). This design effectively expands the vapor space, and achieves the effects of enhancing the heat dissipation efficiency and making the thin vapor chamber suitable for high-wattage heat dissipation applications.

[0021] By means of the above-described structure, the improved structure of the thin vapor chamber of the present disclosure is obtained.

[0022] In summation of the description above, the present disclosure surely achieves the intended purposes described in the specification, thereby overcoming the deficiencies of the related art. With novelty and inventive step, the present disclosure fully meets the requirements for patent application, and is thus filed for application in accordance with the Patent Law. We respectfully request a thorough examination and grant of the patent to safeguard the rights of the inventor.

[0023] The above examples merely represent preferred embodiments of the present disclosure and they are not intended to limit the scope of the present disclosure. Therefore, any equivalent techniques, means, or variations made by utilizing the content of the specification and drawings of the present disclosure are likewise included within the scope of the present disclosure.

Claims

1. An improved structure of a thin vapor chamber, comprising:a first plate, comprising a first plate-portion, and a first frame-portion surrounding the first plate-portion, the first frame-portion protruding towards the first plate-portion and being provided with a first accommodation area, and a first capillary layer located in the first accommodation area and provided for attaching into the first plate-portion;a second plate, stacked on top of the first plate and provided with a second plate-portion, and a second frame-portion surrounding the second plate-portion, the second frame-portion protruding inwardly towards the second plate-portion and provided with a second accommodation area corresponding to the first accommodation area, and a second capillary layer to be attached to the second plate-portion being provided in the second accommodation area; anda plurality of support structures, distributed within the first accommodation area and the second accommodation area, and abutting against the first capillary layer and the second capillary layer;wherein, both the first accommodation area and the second accommodation area are formed by etching, and the depth of etching falls within a range from 2 / 3 to 3 / 4 of a sum of a thickness of the first plate and a thickness of the second plate.

2. The improved structure of a thin vapor chamber according to claim 1, wherein the first plate is made of copper or aluminum.

3. The improved structure of a thin vapor chamber according to claim 1, wherein the second plate is made of copper or aluminum.

4. The improved structure of a thin vapor chamber according to claim 1, wherein the first frame-portion is provided with an inner frame, an outer frame, and a solder groove formed between the inner frame and the outer frame, and a solder is filled in the solder groove for sealing and bonding the first frame-portion and the second frame-portion.

5. The improved structure of a thin vapor chamber according to claim 1, wherein the support structures are made of a solid copper material or a porous material, or made of a solid copper material covered with a capillary material.

6. The improved structure of a thin vapor chamber according to claim 1, wherein the first plate and the second plate share an evaporation area and two condensation areas, and the two condensation areas extend from two sides of the evaporation area respectively and communicate with each other therein.

7. The improved structure of a thin vapor chamber according to claim 6, further comprising at least one strip-shaped capillary structure arranged in the first accommodation area and the second accommodation area.

8. The improved structure of a thin vapor chamber according to claim 7, wherein the strip-shaped capillary structure extends from the evaporation area to any one of the condensation areas.

9. The improved structure of a thin vapor chamber according to claim 1, wherein the sum of the thickness of the first plate and the thickness of the second plate is substantially equal to 1mm.

10. The improved structure of a thin vapor chamber according to claim 9, wherein the thickness of the first plate-portion and the thickness of the second plate-portion fall within a range from 0.12 mm to 0.15mm, and the sum of the thickness of the first accommodation area and the thickness of the second accommodation area is at least 0.7mm.

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