Method for incorporating temperature-control hollow structures in a substrate, in particular in a substrate for an optical element, method and substrate for producing an optical element, optical element, semiconductor technology plant and structured electronic component

Abstract

The invention relates to a method for incorporating temperature-control hollow structures (22) in a substrate (12), in particular in a substrate (12) for an optical element (8), in particular for a mirror (10) for an EUV projection exposure system, said method having the following steps: (A) providing a substrate (12) which consists of a substrate material (12a); (B) generating an intermediate structure (40) which comprises an intermediate layer (42) of modified substrate layer (44) and an intermediate hollow structure (46) which is delimited by the intermediate layer (42) at least in some regions, wherein the modified substrate material (44) has a higher etchability than the substrate material (12a); (C) introducing a treatment medium (90) in the intermediate hollow structure (46), by way of which the intermediate layer (42) is removed from the modified substrate material (44) by way of an etching process, as a result of which the temperature-control hollow structure (22) is produced. The intermediate structure (40) in step (B) is generated by (B.1) successively focusing a modification light beam (56) onto modification locations (66) such that, at the modification locations (66), the modified substrate material (44) is produced; and (B.2) successively focusing a removal light beam (70) onto removal locations (72) such that, at the removal locations (72), material (44; 12a) is removed. The invention also relates to a method and a substrate (12) for producing an optical element (8), and to an optical element (8). Furthermore, the invention relates to a semiconductor technology plant (6) and to a structured electronic component (224).

Description

[0001] Method for incorporating hollow tempering structures into a substrate, in particular into a substrate for an optical element, method and substrate for producing an optical element, optical element and installation of the

[0002] Semiconductor technology and structured electronic components

[0003] REFERENCE

[0004] This application claims priority from German patent application 102023205565.1, filed on June 14, 2023. The complete disclosure of this earlier application is hereby incorporated by reference into the present application.

[0005] BACKGROUND OF THE INVENTION

[0006] 1. Field of the invention The invention relates to a method for incorporating hollow tempering structures into a substrate, in particular into a substrate for an optical element, in particular for a mirror for an EUV projection exposure system, comprising the following steps:

[0007] (A) providing a substrate consisting of a substrate material;

[0008] (B) producing an intermediate structure comprising an intermediate layer of modified substrate material and an intermediate hollow structure which is at least partially delimited by the intermediate layer, wherein the modified substrate material has an increased susceptibility to a chemically active treatment medium relative to the substrate material;

[0009] (C) Introducing a chemically active treatment medium into the intermediate hollow structure, by which the intermediate layer is removed from the modified substrate material, thereby forming the tempering hollow structure.

[0010] Furthermore, the invention relates to a method for producing an optical element, in particular for producing a mirror for an EUV projection exposure system.

[0011] Furthermore, the invention relates to a substrate for producing an optical element, in particular for producing a mirror for an EUV projection exposure apparatus, wherein the substrate has tempering hollow structures, as well as an optical element, in particular a mirror for an EUV projection exposure apparatus with a substrate, as well as a semiconductor technology apparatus and a structured electronic component.

[0012] The following description of the invention is based on an optical element in the form of a mirror and its use in an EUV projection exposure system, wherein heat is dissipated from the mirror by flowing a tempering fluid in the form of a cooling fluid through its existing tempering hollow structures.

[0013] In principle, however, the following explanations generally apply to optical elements to which a substrate made of a substrate material can be assigned, into which hollow tempering structures are incorporated, through which a tempering fluid can flow during operation of the optical element for temperature compensation.

[0014] Optical elements are used in semiconductor technology systems, in which an object is irradiated with working radiation using one or more optical elements. In addition to EUV projection exposure systems, such semiconductor technology systems include mask inspection systems and wafer inspection systems.

[0015] On the one hand, tempering can involve cooling or heating the optical element, or at least a portion of it. This means that the optical element, as a whole or at least in a volume region, is brought to a temperature it did not previously have with the aid of the tempering fluid.

[0016] On the other hand, temperature control can also lead to a specific temperature or a specific temperature range of the optical element, or at least a region of the optical element, being maintained or remaining maintained. These considerations also apply generally to components with a corresponding substrate that carries or can carry one or more functional units and into which hollow temperature control structures are incorporated, through which a temperature control fluid can flow during operation of the component for temperature control. Such a component can, for example, provide a sensor device; in this case, the substrate carries sensor units as functional units.

[0017] 2. Description of the state of the art

[0018] Microlithographic projection exposure systems are used in chip manufacturing to transfer patterns on a mask onto a photoresist previously applied to a wafer. To do this, the mask is illuminated with light and imaged onto the light-sensitive layer in a reduced size. In EUV projection exposure systems, the light has a wavelength between approximately 5 nm and approximately 30 nm; commercially available systems use light with a wavelength of 13.5 nm.

[0019] However, there are no optical materials with sufficiently high transmittance for such short wavelengths. Therefore, in EUV projection exposure systems, the lenses typically used for longer wavelengths are replaced by mirrors, and the mask also contains a pattern of reflective structures.

[0020] Providing mirrors for EUV projection exposure systems is technologically challenging. The substrate consists of a substrate material, which is usually glass, e.g., quartz glass, titanium-doped quartz glass such as ULE®, or a glass-ceramic. Suitable glass-cerams are offered under the trade names Clearceram® or Zerodur® and have the property of having a very low coefficient of thermal expansion at the mirror's operating temperature.

[0021] A coating is applied to the substrate that reflects the EUV light and consists of a multitude of thin double layers with varying refractive indices.

[0022] Even with such complex coatings, the mirrors' reflectivity for EUV light rarely exceeds 70%, and even then only for light that hits the reflective coating perpendicularly or at angles of incidence of a few degrees. The portion of the EUV light not reflected by the coating is absorbed in the substrate, where it leads to significant heating, as the EUV light sources used are very powerful. Even when glass-ceramics with low thermal expansion coefficients are used, the heating can lead to intolerable deformation of the mirrors.

[0023] It was therefore proposed to provide the substrates with hollow tempering structures, which in this case are hollow cooling structures, with particular provision of tempering channels in the form of cooling channels through which water or another tempering fluid, i.e., here a cooling fluid, flows during operation, thus dissipating heat. Such tempering channels can have small cross-sectional diameters of the order of only about 1 mm. 2 and ideally run just below the reflective coating.

[0024] An overview of the methods known to date for creating temperature control channels is contained in application DE 10 2021 214 310.5, the disclosure of which is hereby incorporated in its entirety. Particularly promising are methods in which an ablation light beam is successively focused on ablation sites where temperature control channels are to be created, and the substrate material is ablated by the ablation light beam.

[0025] In this process, modified substrate material is created adjacent to the ablation sites, i.e., adjacent to and not at the focal points of the light beam. This modified substrate material is more susceptible to chemically active treatment media than unprocessed substrate material. In particular, it is more susceptible to etching. The modified substrate material forms the aforementioned intermediate layer, and the material-free areas created by ablation form the aforementioned intermediate hollow structure, thus forming a corresponding intermediate structure.

[0026] In this process, the modified substrate material is created primarily by absorption of the high-energy ablation light beam and by thermal diffusion of the resulting process heat from the ablation sites. Before the substrate is processed, there are no defined indications of the extent to which the modified material will be created. In the case of a laser, experts refer to an area with modified substrate material as a so-called laser-affected zone (LAZ). The modified substrate material can also differ from the substrate material in terms of density, thermal expansion coefficient, and existing material stresses, among other things.

[0027] However, such a material-inhomogeneous substrate is unsuitable for use in an EUV projection exposure system. Therefore, the modified substrate material must be removed. In the known process, the modified substrate material is etched away in a subsequent process step using an etchant, such as hydrofluoric acid (HF) or potassium hydroxide (KOH). After this, the desired thermal cavity structure is formed. This means that the modified substrate material ultimately defines the cross-sections along the course of the thermal cavity structure to be created.

[0028] The overall process speed for forming the desired thermal cavity structure is limited, particularly by the removal rate; the substrate material is removed across almost the entire cross-section of the desired thermal cavity structure, and the modified substrate material is typically created with only a small layer thickness. Furthermore, fluctuations in the material structure of the substrate material, for example, due to regions with different refractive indices / different transmission or the formation of thermal lenses, can lead to fluctuations in material removal, which in turn can lead to undesirable deviations in the cross-sectional profile of the thermal cavity structures and roughness on their lateral surfaces.

[0029] SUMMARY OF THE INVENTION

[0030] It is an object of the invention to provide methods, a substrate, an optical element and a system for semiconductor technology of the type mentioned at the outset, which take these ideas into account and by means of which, in particular, tempering hollow structures can be introduced into the substrate with high precision and quality as well as good process speed, so that, using such an optical element, among other things, structured electronic components with significantly small structures can be produced, and to provide such components.

[0031] This object is achieved in a process of the type mentioned above in that the intermediate structure is generated in step (B) by

[0032] (B.1) successively focusing a modification light beam onto modification sites so that the modified substrate material is formed at the modification sites; and

[0033] (B.2) successively focusing an ablation light beam on ablation sites so that material is removed at the ablation sites.

[0034] According to the invention, it was recognized that by combining the targeted production of modified material with the targeted removal of material, high-quality tempering hollow structures with a homogeneous, roughness-free surface finish can be incorporated into a substrate. While the modified substrate material is created largely unpredictably in the known method, the modified substrate material is created in the present invention using a modified light beam. This allows, above all, the cross-sectional shape of the tempering hollow structures to be planned with high precision.

[0035] Further advantages of the invention emerge from the following features and further from the description of the invention.

[0036] Advantageously, the method enables a first process route (P1) or a second process route (P2) to be carried out, wherein

[0037] - in the first process route (P1), step (B.1) is performed in a first process step (P1-S1) and step (B.2) is performed in a second process step (P1-S2); and in the second process route (P2), step (B.2) is performed in a first process step (P2-S1) and step (B.1) is performed in a second process step (P2-S2). The order of modification and querying can therefore be optional.

[0038] If the first process route (P1) is carried out, it is advantageous if, in its first process step (P1-S1), material structures comprising modified substrate material are produced by step (B.1); and in its second process step (P1-S2), material is removed by step (B.2) such that the intermediate hollow structure is produced and modified substrate material of the material structure is left for the intermediate layer.

[0039] Compared to known methods, in which almost the entire substrate material is removed across the cross-section of the desired tempering cavity, the volume here is reduced by the portion defined by the remaining modified substrate material. This reduces the time required for interrogating the material.

[0040] Here, the method again advantageously opens up two alternative procedures, since in the first process step (P1 -S1) of the first process route (P1) the step (B.1) can be carried out in such a way that material structures of a first type or material structures of a second type are produced, wherein

[0041] - in material structures of the first type, the modified substrate material is produced to fill the cross-section; and

[0042] - in material structures of the second type, modified substrate material is produced in such a way that a core region of substrate material remains which is at least partially delimited by modified substrate material.

[0043] If step (B.2) is then carried out in the second process step (P1-S2) of the first process route (P1), modified substrate material can be removed in the case of material structures of the first type, and the substrate material of the core region can be removed in the case of material structures of the second type, such that the intermediate hollow structure is created and the intermediate layer is formed by the remaining modified substrate material of the material structure. If the second process route (P2) is carried out, it is advantageous if, in the first process step (P2-S1), substrate material of the substrate is removed in step (B.2) such that the intermediate hollow structure is created; and in the second process step (P2-S2), the intermediate layer is produced from modified material in step (B.1), so that the intermediate structure is created.

[0044] Here, too, less material is removed than with the state of the art and accordingly less time is required.

[0045] Preferably, in the second process step (P2-S2) of the second process route (P2), the intermediate hollow structure is filled with an auxiliary liquid, so that it is filled with the auxiliary liquid when step (B.1) is carried out. In this way, undesirable scattering effects on the lateral surface of the intermediate hollow structure can be reduced. The auxiliary liquid is preferably held as a standing liquid volume.

[0046] For this purpose, an auxiliary liquid is preferably used whose refractive index m at the wavelength of the modification light beam matches the refractive index nM of the substrate material at the same wavelength with a tolerance of less than 20%, preferably with a tolerance of less than 10%, more preferably with a tolerance of less than 5% and particularly preferably with a tolerance of less than 1% based on the refractive index nM of the substrate material.

[0047] Further preferably, ablation sites are exposed to a flushing fluid while step (B.2) is carried out, whereby material ablated by the ablation light beam is flushed away.

[0048] For the final formation of the tempering hollow structure, it is particularly advantageous if the treatment medium flows through the intermediate hollow structure at least temporarily, preferably continuously, in step (C). For this purpose, the intermediate hollow structure is preferably created such that it extends between two openings in the substrate. The chemically active treatment medium is preferably an etching medium, an oxidizing agent, or a reducing agent. The etching, oxidative, or reductive effect can also be combined. It is particularly preferred that the chemically active treatment medium is an etching medium, by means of which the intermediate layer is removed from the modified substrate material in step (C) by an etching process.

[0049] In the method mentioned at the outset for producing an optical element, in particular for producing a mirror for an EUV projection exposure apparatus, hollow tempering structures are incorporated into a substrate according to the method explained above and further processing comprises one or more steps of chemical and / or physical processing of at least one surface of the substrate and the production or application of a coating to the substrate which is at least designed to reflect at least 50% of EUV light incident vertically or almost vertically.

[0050] In a substrate of the type mentioned at the outset, the above-mentioned object is achieved in that at least one tempering hollow structure defines an inner surface which, at least in some regions, has a mean roughness Ra according to DIN EN ISO 25178, as of April 2023, between 10.0 pm and 5.0 pm, which can in particular be between 10.0 pm and 6.5 pm, between 10.0 pm and 8.0 pm, between 8.5 pm and 5.0 pm, between 7.0 pm and 5.0 pm or between 8.5 pm and 6.5 pm, or which, at least in some regions, has a mean roughness Ra of 5.0 pm and less, which can in particular be between 5.0 pm and 0.1 pm, preferably between 4.5 pm and 0.125 pm, between 4.0 pm and 0.15 pm, between 3.5 pm and 0.175 pm or between 3.0 pm and 0.2 pm.

[0051] The above-mentioned object is also achieved by a substrate of the type mentioned at the outset, in which at least one tempering hollow structure defines an inner surface which has a surface topography whose geometric shape results from an at least regional superposition of countersunk structures which extend into a substrate material of the substrate.

[0052] Preferably, one or more depression structures are segments of bodies that are point-symmetric or at least axially symmetric. The surface topography advantageously defines adjacent depression areas, between which peripheral regions, particularly linear peripheral regions, extend.

[0053] One or more countersink areas may be axisymmetric or non-axisymmetric.

[0054] It is advantageous if an axisymmetric countersunk area follows a section of the outer surface of a spherical segment, an ellipsoidal segment or a paraboloid.

[0055] Advantageously, a tempering hollow structure is a tempering channel that has one or more of the following features: a) the tempering channel has a diameter between 0.5 mm and 20 mm, preferably between 1 mm and 5 mm; b) the tempering channel has a length of at least 10 cm, at least 15 cm, or at least 20 cm. c) the tempering channel is curved or has at least one curved section; d) the tempering channel has a section that follows the curvature of a support surface for a coating of the substrate; e) the tempering channel has a strongly curved section that has an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90°; f) the tempering channel has a strongly curved section which has a curvature angle between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90° and follows an arc;g) the temperature control channel has a strongly curved section which has an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90°, and follows an arc and defines an outer radius of curvature R and a diameter D, wherein a ratio R / D of the radius of curvature R to the diameter D is between 2 and 6, preferably between 2.5 and 5, and particularly preferably between 2.5 and 3.5; h) the temperature control channel runs at a distance of 1.0 mm to 50.0 mm, from 1.0 mm to 20.0 mm, from 1.0 mm to 10.0 mm, or from 1.0 mm to 5.0 mm, relative to a support surface for a coating of the substrate;

[0056] A reliable guarantee of good flow properties is also achieved according to the invention in a substrate of the type mentioned at the outset, which defines a carrier surface for a coating, in that the fit of the carrier surface changes by less than 100 pm, in particular by less than 50 pm and further in particular by less than 25 pm over a service life of the substrate of up to 10 years, at least up to five years and at least up to two years.

[0057] Some or all of the features explained above can also be realized in combinations in a substrate to achieve synergistic advantages.

[0058] Preferably, tempering hollow structures are incorporated into the substrate according to the method explained above.

[0059] In an optical element of the type mentioned above, the above-mentioned task is solved by a substrate with some or all of the features described above.

[0060] The pass of the optical element advantageously changes by less than 100 pm, in particular by less than 50 pm and further in particular by less than 25 pm over a lifetime of the optical element of up to 10 years, at least up to five years and at least up to two years.

[0061] These properties are particularly advantageous in a mirror for an EUV projection exposure system, wherein the substrate has a carrier surface carrying a coating that is at least designed to reflect at least 50% of EUV light incident vertically or nearly vertically.

[0062] The above-mentioned properties of the optical element are advantageously combined. In a semiconductor technology system, the task is solved by such an optical element,

[0063] This is particularly advantageous in an EUV projection exposure system.

[0064] In the case of a structured electronic component, the above-mentioned task is solved by manufacturing it using such a semiconductor technology system.

[0065] BRIEF DESCRIPTION OF THE DRAWINGS

[0066] In the following, exemplary embodiments of the invention are explained in more detail with reference to the drawings. In these drawings:

[0067] Figure 1 schematically shows a section of an optical element in the form of a mirror for an EUV projection exposure system, which has cooling hollow structures in the form of cooling channels through which a cooling fluid flows by means of a cooling system;

[0068] Figure 2 shows a modification processing system by means of which modified substrate material is produced at the modification sites by way of a first process route by successively focusing a modification light beam onto modification sites, wherein material structures made of modified substrate material are incorporated into the substrate;

[0069] Figure 3A shows section III A according to Figure 2 on a larger scale, incorporating material structures of a first type which fill the cross-section;

[0070] Figure 3B shows a section along the section line III B-III B in Figure 3A;

[0071] Figure 4 shows the substrate with incorporated material structures of the first type;

[0072] Figures 5A and 5B show sections VA and VB in Figure 4 on a larger scale;

[0073] Figure 6A shows a section corresponding to the section according to Figure 3A, wherein material structures of a second type are incorporated, in which a core region of substrate material remains in the cross-section;

[0074] Figure 6B shows a section along the section line VI B-Vl B in Figure 6A:

[0075] Figure 7 shows sections corresponding to the sections according to Figures 5A and 5B with the material structures of the second type;

[0076] Figure 8 shows an ablation processing system by means of which material is removed at the ablation sites in the substrate by successively focusing an ablation light beam onto ablation sites, whereby intermediate hollow structures are produced in the material structures from modified substrate material;

[0077] Figure 9A shows section IX A according to Figure 8 on a larger scale;

[0078] Figure 9B shows a section along the section line IX B-IX B in Figure 9A;

[0079] Figure 10 the substrate with incorporated intermediate structures;

[0080] Figures 11 A and 11 B show sections XI A and XI B in Figure 10 on a larger scale;

[0081] Figure 12 shows the ablation processing system of Figure 8, wherein intermediate hollow structures are created in the substrate material by a second process route;

[0082] Figure 13A shows section XIII A according to Figure 12 on a larger scale;

[0083] Figure 13B shows a section along the section line XIII B-Xlll B in Figure 13A;

[0084] Figure 14 the substrate with incorporated intermediate hollow structures;

[0085] Figures 15A and 15B show sections XV A and XV B in Figure 14 on a larger scale;

[0086] Figure 16 shows a modified modification processing system according to Figure 2 with a device for introducing an auxiliary liquid into the intermediate hollow structures;

[0087] Figure 17A shows the section XVII A in Figure 16 on a larger scale; Figure 17B shows the section along the section line XVII B-XVII B in Figure 17A;

[0088] Figure 18 shows an etching processing system with which an etching medium can be introduced into the intermediate hollow structures of the intermediate structures;

[0089] Figures 19A and 19B show sections XIX A and XIX B in Figure 18 on a larger scale;

[0090] Figures 20A and 20B show sections corresponding to Figures 19A and 19B after completion of the etching process;

[0091] Figure 21 illustrates the possibility of correcting irregularities in the intermediate hollow structures;

[0092] Figure 22 shows a substrate for an EUV mirror into which tempering hollow structures were incorporated by the first or second process route;

[0093] Figure 23A is a topography image of a surface area of ​​a tempering cavity structure;

[0094] Figure 23B shows a section to illustrate an achieved mean roughness value Ra;

[0095] Figure 24 shows schematically a longitudinal section of a tempering hollow structure;

[0096] Figure 25 shows section XXV in Figure 22 on an enlarged scale;

[0097] Figure 26A is a passe-image of a substrate with intermediate structures before an etching process;

[0098] Figure 26B is a passe-image of this substrate with preserved tempering hollow structures after an etching process;

[0099] Figure 26C is a differential view of the images taken in Figures 26A and 26B;

[0100] Figure 27 shows a schematic diagram of a semiconductor technology system using the example of an EUV projection exposure system. DESCRIPTION OF PREFERRED EMBODIMENTS

[0101] 1. Structure of an optical element using the example of an EUV mirror

[0102] Figure 1 shows a semiconductor technology system described above, generally designated 6, and a section of an optical element designated 8 overall, which is illustrated by way of example as a mirror 10 for an EUV projection exposure system. The mirror 10 can be arranged in the illumination system or in the projection lens.

[0103] The optical element 8, and thus the mirror 10, comprises a substrate 12 made of a substrate material 12a, which in the present embodiment of the mirror 10 is therefore a mirror substrate. In practice, such a mirror substrate is, in particular, a titanium-doped quartz glass.

[0104] In the present embodiment, the substrate 12 is monolithic, which is also the preferred embodiment. In modifications not specifically shown, the substrate 12 can also be assembled from sub-segments. Additive manufacturing methods are generally suitable in this case. For example, 3D printing processes are also possible, as are laser welding processes or techniques for thermally bonding workpieces.

[0105] In the case of mirror 10, the substrate 12 has a precisely machined surface 14, the curvature of which determines the optical properties of the mirror 10. The surface 14 of the substrate 12 serves as the support surface and will be referred to as such below. The support surface 14 bears a coating 16, which, among other things, ensures the optical properties of the optical element 8. In the mirror 10 shown here, the coating 16 is designed to predominantly reflect incident EUV light 18. As illustrated in the enlarged section A, this coating 16 is multilayered in the present embodiment and, in particular, is constructed from several double layers 20 that have been applied to the support surface 14. The coating 16 has a reflection coefficient of at least 50%, preferably more than 70%, for perpendicularly incident EUV light 18. The degree of reflection achieved during operation depends on the angle of incidence of the EUV light 18.

[0106] In addition to the double layers 20, the coating 16 can also comprise further layers that do not contribute to reflection, but possibly to stabilization and / or protection of the coating 16 or the optical element 8 or the mirror 10. For example, this can provide protection against components of a hydrogen plasma. Such further layers can be provided between the double layers 20 in the interior of the coating 16, between the double layers 20 and the carrier surface 14, and / or on the side of the double layers 20 remote from the carrier surface 14.

[0107] In an optical element 8, the coating 16 can also be formed by modifying the outer surface of the substrate 12 through processing and / or treatment. In this case, the coating 16 is not a specially applied coating, but rather defines a layer of the substrate 12 as such; the underlying surface, as a transition to the substrate material 12a, is then the support surface 14.

[0108] In the mirror 10 explained here and the application of EUV light 18, the non-reflected portion enters the substrate 12 and is absorbed there, predominantly in the vicinity of the support surface 14. As a result of this absorption, the substrate 12 heats up, particularly in the vicinity of the areas of the support surface 14 exposed to the EUV light 18. Since the thermal expansion coefficient of the substrate material 12a is not identical to zero and is also temperature-dependent, the heating can lead to changes in the shape of the substrate 12, which affect the optical properties of the mirror 10. With regard to optical elements 8, generally speaking, temperature changes in the substrate 12 can affect the optical properties of the optical element 8.

[0109] However, due to the extremely tight specifications in EUV projection exposure systems, changes in the optical properties of the mirrors are not tolerable, or at best, only negligible. However, in general, the optical properties of optical elements 8 should remain stable, and the functionality of components should be maintained.

[0110] In order to minimize temperature fluctuations in the substrate material 12a and the associated changes in shape of the substrate 12, several tempering hollow structures 22 are incorporated into the substrate 12.

[0111] During operation of the EUV projection exposure system, these hollow tempering structures 22 are flowed through by a tempering fluid in the form of a cooling fluid 24, whereby cooling water is used in practice; however, other cooling liquids and cooling media are also possible.

[0112] The cooling fluid 24 absorbs the heat introduced by the EUV light 18 and removes it from the substrate 12. For this purpose, the temperature control hollow structures 22 are connected to a cooling unit 26 and a pump unit 28 of a cooling system designated overall by 30. The pump unit 28 draws the cooling fluid 24 from the temperature control hollow structures 22 and feeds it via a return line 32 to the cooling unit 26. There, the cooling fluid 24 is cooled to its target temperature before flowing through the temperature control hollow structures 22 again. This circuit is illustrated in Figure 1 by corresponding arrows.

[0113] Typically, the tempering hollow structures 22 run close to the support surface 14 and at least partially parallel thereto.

[0114] In the exemplary embodiments described here, the hollow temperature control structures 22 are designed as temperature control channels 34, of which three temperature control channels 34.1, 34.2 and 34.3 are illustrated. The temperature control channels 34 each extend between two openings 36, which are only designated in Figure 1 for the temperature control channel 34.1, wherein each temperature control channel 34 is connected via its openings 36 to the cooling unit 26 and to the pump unit 28. The openings 36 thus define, depending on the assignment, an inlet or an outlet of the temperature control channels 34 for the cooling fluid 24. The cross-section of the temperature control channels 34 does not have to be constant and can be, for example, circular, oval, rectangular or even annular. The temperature control hollow structures 22 can have changing cross-sections and shapes depending on their position in the substrate 12.In the present embodiments, the openings 36 of the temperature control channels 34 are arranged on the rear side 38 of the substrate 12 opposite the carrier surface 14.

[0115] In modifications not specifically shown, the temperature control hollow structures 22 may also be more extensive chambers in which the cooling fluid 24 is exchanged only slowly and in which no longitudinal axis is defined, as is characteristic of a channel.

[0116] The arrangement of the temperature control channels 34 shown in the figures is only exemplary and may vary in actual systems; the number of temperature control channels 34 may also be larger or smaller. For example, the openings 36 may also be arranged on the lateral flanks of the substrate 12, or at least one temperature control channel 34 may be provided that runs through the substrate 12 or a portion thereof in a meandering or spiral manner.

[0117] In a further modification, one or more temperature control channels 34 can also extend from a distribution line or a distribution chamber in the substrate 12. Such temperature control channels 34 then open with their openings 36 at one or both ends into such a distribution line or distribution chamber, from which the temperature control channels 34 are then supplied with the temperature control fluid. The distribution line or distribution chamber and, if applicable, the end of a temperature control channel 34 remote therefrom are then connected accordingly to the cooling system 30.

[0118] In the following, reference is made to the tempering channels 34 and in particular to the tempering channel 34.1 in all embodiments as representative of generally any type and arrangement of tempering hollow structures 22.

[0119] During the production of an optical element 8 using the methods described here for producing temperature control hollow structures 22, various stages of the substrate 12 are defined.

[0120] A first stage of the substrate 12 defines a type of raw substrate 12', which is still largely unprocessed and untreated and in which no support surface 14 is structurally formed. In the case of the substrate 12 explained above, which is a mirror substrate, such a raw substrate is, for example, a glass cuboid made of titanium-doped quartz glass.

[0121] A second stage of the substrate 12 defines a carrier substrate 12", in which the carrier surface 14 is created and formed. This may require a variety of chemical and / or physical steps, which may include processes such as grinding, turning, polishing, and / or etching.

[0122] A third stage of the substrate 12 then defines an element substrate 12'", in which the support surface 14 is provided with at least the coating 16 that determines the optical properties. If the resulting optical element is a mirror, the element substrate 12'" is terminologically a mirror substrate. Accordingly, the substrate 12 in Figure 1 also bears the reference symbol 12'", since it is shown there in the element substrate stage. If the substrate 12 is, for example, part of a sensor device, as described above, the element substrate 12'" is terminologically a sensor substrate.

[0123] The creation of the tempering hollow structures 22 in the substrate 12, described below, can in principle be carried out at any stage of the substrate 12. This usually occurs at the stage of the raw substrate 12', but can also be carried out, for example, at the stage of the carrier substrate 12" or even at the stage of the element substrate 12'".

[0124] In the present case, the production of the tempering hollow structures 22 is explained in particular using the example of the carrier substrate 12" in order to illustrate the function of the mirror 10 obtained later, as envisaged in the present embodiment.

[0125] 2. Creating the tempering hollow structures using the example of the tempering channels

[0126] Figures 2 to 9 illustrate a first process route PI with which intermediate structures 40, which can be seen in Figures 10 and 11, can be incorporated into the substrate 12, which intermediate structures comprise an intermediate layer 42 made of modified substrate material 44 and an intermediate hollow structure 46 which is delimited by the intermediate layer 42 at least in regions.

[0127] The modified substrate material 44 has an increased susceptibility to a chemically reactive treatment medium compared to the substrate material 12a and can be removed in a downstream process, whereby the desired temperature control hollow structures 22, ie here the temperature control channels 34, are completed starting from the intermediate structures 40; this will be discussed further below.

[0128] Figures 12 to 17 illustrate a second process route P2 with which the intermediate structures 40 can be incorporated into the substrate 12.

[0129] In the embodiments described below, the intermediate hollow structures 46 each extend between two openings of the substrate, which are located at the location of the later openings 36 of the temperature control channels 34.

[0130] 2.1 First process route P1 to intermediate structures 40

[0131] First, Figure 2 illustrates the substrate 12 with a dashed outer contour line as a raw substrate 12' and with solid lines as a carrier substrate 12", ie as a substrate 12 with an already formed carrier surface 14 before the reflective coating 16 is applied.

[0132] In the following, only the substrate 12 is shown in the enlarged sections. The outer contour of the raw substrate 12' may be only partially indicated at the edge. The shape of the future support surface 14 is also already defined in the raw substrate 12', and this imaginary support surface 14 serves as a reference surface for defining the shape of the hollow tempering structures 22 in the substrate 12.

[0133] Figure 2 shows a modification processing system 48 of a processing device designated at a higher level by 50. Using the modification processing system 48, material structures 52 made of modified substrate material 44 can be machined into the substrate 12 in a first process step P1-S1 of the first process route P1. Two alternatives exist here, and material structures 52 of a first type or material structures 52 of a second type can be produced, which are designated 52-I and 52-II, respectively.

[0134] The modification processing system 48 includes a light source 54 that generates a modification light beam 56. The light source 54 is preferably a high-power laser that generates short or ultrashort pulses. These can be pulses in the femtosecond, picosecond, or nanosecond range.

[0135] The modification light beam 56 can be directed at various locations on the substrate 12 with the aid of a focusing device 58, which comprises a scanning device 60 and a focusing lens 62. The relative arrangement between the substrate 12 and the modification processing system 48 can also be changed with the aid of a moving table (not shown) such that the processing light beam 56 can be directed at any location on the substrate 12 after passing through the focusing lens 62. The scanning device 60, the focusing lens 62, and any moving table present are controlled by a control device 64 such that the processing light beam 56 is successively focused on all modification locations 66 on the substrate 12 where temperature control channels 34 are to be created.Alternatively, the relative arrangement between the substrate 12 and the modification processing system 48 can be changed by moving the modification processing system 50. For small substrates 12, moving operations can be omitted provided the scanning device 60 covers a sufficiently large area.

[0136] At the focal points generated by the focusing lens 62, the intensity of the modification light beam 56 is so high that the material of the substrate 12 is specifically modified there, particularly by absorption of the high-energy modification light beam 56, with largely no material loss occurring. This modification can be understood as targeted damage to the substrate material 12a, which weakens the material and leads to increased susceptibility to a chemically active treatment medium. In this case, the modification leads to increased susceptibility to etching. The area in which the modification light beam 56 modifies the substrate material 12a defines a respective modification site 66, which naturally moves with the focal point of the modification light beam 56.The locations of the focal points and thus the modification locations 66 determine where, with which geometry, and with which cross-sections a temperature control channel 34 will later be created in the substrate 12. To create a temperature control channel 34 with a sufficiently large cross-section, the processing light beam 56 traverses the entire cross-section in a radial direction according to a predetermined pattern at a specific axial position. This process is then repeated at adjacent axial positions until the material structure 52 made of the modified substrate material 44 has the desired axial dimension.

[0137] Figures 2 and 3 initially show how material structures 52 of the first type 52-I are incorporated, which are shown in Figures 4 and 5 after their completion. The material structures 52, regardless of whether they are of the first or second type, ultimately reflect the course and, in the direction of the course, the cross-sections of the subsequent temperature control channels 34 in the substrate 12 and, accordingly, bear the reference numerals 52.1, 52.2, and 52.3 in Figure 4.

[0138] In Figures 2 and 3, a section 52a of a material structure 52 of the first type 52-I can be seen, which has already been incorporated into the substrate 12 and follows the course of the later tempering channel 34.1.

[0139] Figure 3B illustrates, based on the cross-section of section 52a, that in the subsequent material structure 52 of the first type 52-I, the modified substrate material 44 is intended to be present in cross-section without hollow structures, and does so, i.e., that in these material structures 52 of the first type 52-I, the modified substrate material 44 is produced to fill the cross-section. This does not preclude the modified substrate material 44 from being porous, for example, or the like.

[0140] As a result, with the aid of the modification processing system 58, the substrate 12 shown in Figure 4 is obtained, into which the material structures 52 made of modified substrate material 44 are incorporated. Figure 5 illustrates again, using the sections VA and VB according to Figure 4 with the material structure 52.1, the continuous course of the material structures 52 of the first type 52-I through the substrate 12.

[0141] Figure 6 alternatively shows how material structures 52 of the second type 52-11 are incorporated into the substrate 12, specifically using the example of the material structure 52.1, which follows the course of the later temperature control channel 34.1. Figure 6 again shows a section 52a of the material structure 52 that has already been incorporated into the substrate 12. As can be seen in Figure 6B from the cross-section of this section 52a, in material structures 52 of the second type 52-II, modified substrate material 44 is produced in such a way that a core region of substrate material 12a remains, which is at least partially delimited by modified substrate material 44.

[0142] In the embodiment shown here, the material structure 52 of the second type 52-II is annular in cross-section. Figure 7 shows its completion using the material structure 52.1 and the same sections that can be seen in Figure 5.

[0143] In the following, reference will be made largely only to the material structures 52 in general and only in individual cases to their first type 52-I or second type 52-II if there are differences.

[0144] In a second process step P1 -S2 of the first process route P1, the above-mentioned intermediate hollow structures 46 are now incorporated into the material structures 52 made of modified substrate material 44 in such a way that the intermediate structures 40 are created overall.

[0145] For this purpose, the processing device 50 comprises a removal processing system 68, shown in Figure 8, which comprises largely the same components as the modification processing system 48, which accordingly also bear the same reference numerals. In principle, the above statements regarding these components apply accordingly.

[0146] In contrast to the modification processing system 48, the light source 54 of the ablation processing system 68 generates an ablation light beam 70, wherein the light source is also preferably a high-power laser that generates ultrashort pulses.

[0147] In the ablation light beam 70, the intensity at the focal points generated by the focusing lens 62 is so high that ablation sites 72 are defined there, and the existing material is ablated. The locations of the focal points and thus the ablation sites 72 determine where and with which geometry and cross-sections an intermediate hollow structure 46 is created in the modified substrate material 44.

[0148] Figures 8 and 9 show a section 46a of an intermediate hollow structure 46 already incorporated into the material structure 52.1 and a section 40a of an intermediate structure 40 already incorporated into the substrate 12, respectively. These sections each follow the course of the material structure 52.1 and thus the course of the subsequent temperature control channel 34.1. A section 42a of the resulting intermediate layer 42 is also formed accordingly.

[0149] The cross-sections of the intermediate hollow structures 46 are smaller along the course of the material structures 52 than their respective cross-sections, so that, as a result, the intermediate structures 40 are produced in which each intermediate hollow structure 46 is delimited by an intermediate layer 42 made of modified substrate material 44. In the present case, the intermediate hollow structures 46 are intermediate hollow channels delimited by a shell made of modified substrate material 44. Figure 7B illustrates this using the cross-section of sections 40a / 42a / 46a, which, however, also reflects the cross-section of a completed intermediate structure 40.

[0150] If material structures 52 of the first type 52-I are present, modified substrate material 44 is removed at the removal locations 72. If material structures 52 of the second type 52-II are present, substrate material 12a of the substrate 12 is removed at the removal locations 72. In this case, the core region framed by dashed lines to the right of the processing light beam 70 in Figure 9A still consists of substrate material 12a.

[0151] The removal processing system 68 also includes a flushing device, designated overall by 74, which is also controlled by the control device 64. The flushing device 74 applies a flushing fluid 76 to the removal site 72 while the modified substrate material 44 is removed, whereby removed material is flushed away by the flushing fluid 76. For this purpose, a flushing line 78 is provided, which is inserted into the section 40a / 46a and is fed with the flushing fluid 76 by a pump (not specifically shown). The discharge end of the flushing line 78 can be guided to the removal sites 72 by a line conveyor (also not specifically shown), which advances the flushing line 78 according to the configuration of the section 40a / 46a. The removed material is entrained by the flushing fluid 76 and flows away via the already formed section 40a / 46a, which is indicated in Figure 9A by corresponding arrows.

[0152] As a result, the substrate 12 shown in Figures 10 and 11 is obtained as an intermediate substrate from the material structures 52—both of the first type 52-I and of the second type 52-II—with the aid of the removal processing system 68. Figure 11 illustrates again, using sections XI A and XI B according to Figure 10, the continuous course of the intermediate structures 40 through the substrate 12, which are additionally designated 40.1, 40.2, and 40.3, corresponding to the later tempering channels 34.

[0153] In summary, generally speaking, in this first process route P1, in a first process step P1-S1, material structures 52 are created in the substrate material 12a of the substrate 12, which comprise modified substrate material 44, and in a second process step P1-S2, material is removed such that intermediate hollow structures 46 are created and modified substrate material 44 is left for the intermediate layer 42, so that the intermediate structures 40 are formed. In the second process step P1-S2, in the case of material structures 52 of the first type 52-I, modified substrate material 44 or, in the case of material structures 52 of the second type 52-II, the substrate material 12a of the core region is removed such that the intermediate hollow structure 46 is created and the intermediate layer 42 is formed by the remaining modified substrate material 44 of the material structure 52.

[0154] 2.2 Second process route P2 to intermediate structures 40

[0155] In an alternative second process route P2, however, the intermediate hollow structures 46 are produced in a first process step P2-S1 by the substrate material 12a of the substrate 12 being removed accordingly, and in a second process step P2-S2 the intermediate layer 42 is produced from modified substrate material 44, so that the intermediate structures 40 are created.

[0156] Figure 12 illustrates that the removal processing system 68 is used for the first process step P2-S1 of the second process route P2; identical components again bear the same reference numerals.

[0157] In the ablation light beam 70, the intensity at the focal points generated by the focusing lens 62 is so high that the substrate material 12a of the substrate 12 is ablated at the ablation locations 72. The locations of the focal points and thus the ablation locations 72 also determine where and with which geometry and cross-sections an intermediate hollow structure 46 is formed, albeit now in the substrate material 12a of the substrate 12.

[0158] In Figures 13A and 13B, dashed lines 80 depict the course, geometry, and cross-sections of the hollow tempering structures 22 and, specifically, of the tempering channel 34.1, which are to be present in the finished mirror 10. As can be seen there, the cross-sections of the intermediate hollow structures 46 along the planned course 80 of the tempering channels 34 are smaller than their respective cross-sections.

[0159] In Figures 12 and 13, a section of an intermediate hollow structure 46 can be seen which has already been incorporated into the substrate material 12a, wherein the section again bears the reference number 46a and follows the course 80 of the later tempering channel 34.1.

[0160] Figures 14 and 15 illustrate the result of the first step P2-S1 of the second process route P2, in which the intermediate hollow structures 46 are incorporated into the substrate 12. The intermediate hollow structures 46 reflect the course and, in the course direction, the cross sections of the later temperature control channels 34 in the substrate 12 and, accordingly, bear the reference numerals 46.1, 46.2, and 46.3 in Figure 14.

[0161] In the second process step P2-S2 of the second process route P2, the intermediate structures 40 are now created by creating the intermediate layers 42 in the substrate material 12a surrounding the intermediate hollow structures 46, so that the intermediate structures 40 are formed overall. As Figure 16 shows, a modified modification processing system 82 is used for this purpose, which largely corresponds to the modification processing system 48 according to Figure 2 and in which identical components bear the same reference numerals.

[0162] Figures 16 and 17 show a section 42a of an intermediate layer 42 made of the modified substrate material 44, which has already been incorporated into the material substrate 12a, whereby a section 40a of the associated intermediate structure 40 is formed, which defines the later tempering channel 34.1 and is accordingly designated 40.1.

[0163] The lateral surfaces of the intermediate hollow structures 46, which were produced with the ablation processing system 68, have a surface roughness with roughnesses that can be greater than 1 μm. Therefore, the modification light beam 56 is scattered at these lateral surfaces, which negatively affects the result of the formation of the intermediate layers 42. In particular, in the worst case, regions in the substrate material 12a that are located on the side of the existing intermediate hollow structures 46 remote from the focus lens 62 can no longer be reached by the modification light beam 56.

[0164] This scattering effect can be prevented or sufficiently reduced by an auxiliary liquid 84. The auxiliary liquid 84 is preferably transparent to the modification light beam 56 and more preferably has the same or at least a similar refractive index n as the substrate material 12a of the substrate 12. Preferably, the refractive index m of the auxiliary liquid 84 at the wavelength of the modification light beam 56 matches the refractive index HM of the substrate material 12a at the same wavelength with a tolerance of less than 20%, preferably with a tolerance of less than 10%, more preferably with a tolerance of less than 5%, and particularly preferably with a tolerance of less than 1%, based on the refractive index HM of the substrate material 12a. For example, glycerol and water are suitable as auxiliary liquid 84.

[0165] For this purpose, the modification processing system 82 additionally comprises a fluid device 86, with which the already formed intermediate hollow structures 46 can be filled with the auxiliary fluid 84. The fluid device 86 is preferably configured such that the auxiliary fluid 84 can be held as a stationary volume of fluid in the hollow structures in order to avoid undesirable effects caused by turbulence of the auxiliary fluid 84. The pump shown with the fluid device 86 then serves only to fill or empty the hollow structures, but not to circulate the auxiliary fluid 84.

[0166] Depending on the refractive index m of the auxiliary liquid 84, there may be a shift in the focal points and thus a shift in the modification locations 66 relative to the focal points or modification locations reached by the modification light beam 56 without the auxiliary liquid 84. This is particularly relevant for those modification locations 66 that are to be reached on the side of an already existing intermediate hollow structure 40 remote from the focus lens 62, for which purpose the intermediate hollow structure 40 must be irradiated.

[0167] This shifting effect on the focal points of the modification light beam 56 is taken into account by the control device 64 so that the modified substrate material 44 is produced in the desired areas.

[0168] As a result, the intermediate substrate 12 shown in Figures 8 and 9 is obtained in this way with the aid of the modification processing system 82, into which the intermediate structures 40 are incorporated.

[0169] In summary, in this second process route P2, in the first process step P2-S1, intermediate hollow structures 46 are incorporated into the substrate material 12a of the substrate 12, and in the second process step P2-S2, the intermediate layers 42 made of modified substrate material 44 are incorporated into the substrate material 12a of the substrate 12 in such a way that the intermediate structures 40 are formed.

[0170] 2.3 Application of process routes P1 and P2

[0171] The two process routes P1 and P2 described above can also both be applied to one and the same substrate 12. Depending on the respective geometry and the respective configuration of different tempering cavity structures 22, one or the other process route P1 or P2 may be more advantageous for different tempering cavity structures 22. The various alternatives of the process routes P1 or P2 can also be applied independently of one another to one and the same substrate 12.

[0172] 2.4 Completion of the temperature control channels

[0173] As mentioned above, the intermediate layers 42 of modified substrate material 44 are now removed by a chemically active treatment medium.

[0174] This is illustrated in Figure 18, in which the intermediate substrate 12 according to Figures 10 and 11 can be seen. During the etching step, a chemically active treatment medium 90 is introduced into the intermediate hollow structures 46 of the intermediate structures 40 with the aid of a treatment device 88, by which their intermediate layer 42 is removed from the modified substrate material 44.

[0175] The treatment medium 90 preferably flows through the intermediate hollow structure 46 continuously. In a modification, the treatment medium 90 can also flow through the intermediate hollow structure 46 only temporarily and be introduced into the intermediate hollow structure 40 for defined periods of time. The respective intermediate layer 42 and intermediate hollow structure 46 are designated only in the intermediate structure 40.1.

[0176] In the present embodiment, the chemically active treatment medium 90 is an etching medium 90', and the intermediate layer 42 made of the modified substrate material 44 is removed by an etching process. The treatment device 88 is an etching device in this case. Alternatively, the treatment medium 90 can also be an oxidizing agent or a reducing agent, which also includes the treatment medium 90 containing an oxidizing agent or a reducing agent.

[0177] Bases and acids can be used as etching agents. Bases are particularly strong bases, such as potassium hydroxide (KOH). Strong acids can also be used, with hydrofluoric acid (HF) being particularly suitable for acids, which defines a weak but highly reactive acid. The concentration of the bases or acids in the etching medium 90' is adjusted to the required etching effect.

[0178] Alternatively, an ammonium fluoride buffer NH4F / H2O / HF or CF4 for dry etching can be used.

[0179] The treatment device 88 comprises a reservoir 92 filled with the treatment medium 90, here the etching medium 90', with a pump 94, which can be connected to an open end of the intermediate structure 40 through which the medium is to flow; in Figure 18, this is shown for the intermediate structure 40.1.

[0180] The other open end of the intermediate structure 40 through which the etching medium is to flow is connected to a collecting container 96 of the treatment device 88. Optionally, the etching medium 90' can also be guided through the intermediate structure 40 in several cycles by a circulation system 98, indicated schematically by a dashed line. This also applies generally to a treatment medium 90.

[0181] Figures 19 and 20 illustrate, based on sections XIX A and XIX B in Figure 18, how the intermediate layer 42 in the intermediate structure 40.1 in Figure 19 has become thinner compared to the initial situation according to Figure 11 and is further removed or etched away by the treatment medium 90 or the etching medium 90' until the tempering channel 34.1 shown in Figure 20 is completed.

[0182] Such treatments or etching treatments of the intermediate layers 42 are carried out on all existing intermediate structures 40 until the substrate 12 of the mirror 10 with the tempering hollow structures 22 according to Figure 1 is obtained, but in which the coating 16 has not yet been applied to the carrier surface 14.

[0183] Because the etching medium 90' flows through existing intermediate hollow structures 46, which are accessible from the outside at both ends, a uniform attack or etching attack on the modified substrate material 44 in the intermediate layers 42 is ensured without any blockage effects in dead volumes. The treatment medium 90 or the etching medium 90' exhibits the behavior of a laminar flow; no dead zones are created. For the sake of simplicity, the etching step with the etching medium 90' will be referred to below as the treatment step. The above statements apply accordingly to a treatment step with an alternative chemically active treatment medium 90.

[0184] 2.5 Corrections of irregularities

[0185] Figure 21 shows, by way of example, the possibility of using the two process routes P1 and P2 in conjunction with the downstream etching step to compensate for irregularities that may occur in the intermediate hollow structures 46 when these are incorporated into the material structures 52 made of modified substrate material 44 or directly into the substrate material 12a.

[0186] Figures 21A and 21B show section IXA from Figure 8 and section XIIIA from Figure 12, respectively, and illustrate how, on the one hand, modified substrate material 44 of the material structure 52.1 of the first type 52-I is removed in the first process route P1, and, on the other hand, the substrate material 12a is removed in the second process route P2 with the ablation light beam 70. However, irregularities in the form of offset points 100 have occurred in the intermediate hollow structure 46.1. Such irregularities can arise, for example, due to interruptions in the ablation process or fluctuations in the material structure of the material structures 52 or the substrate 12.

[0187] As a result, the intermediate substrate 12 according to Figure 10 then has such offset points 100 in the formed intermediate structures 40, which Figure 21C shows using the intermediate structure 40.1.

[0188] As long as such offset points 100 are still located in the radial direction within the outer boundary of the tempering channel 34 to be created, the offset points 100 can be compensated by the etching step.

[0189] As Figure 21A shows, this is the case with the first process route P1 when the material structure 52.1 has been machined with a sufficiently large cross-section in the first process step P1-S1 there, so that an offset point 100 on the radial outside still remains surrounded by modified substrate material 44. Figure 21B shows that this is the case with the second process route P2 when the intermediate hollow structure 46.1 with the offset points 100 is still produced within the planned geometry 80 of the temperature control channel 34.1 in the first process step P2-S1 there. In the second process step P2-S2 of the second process route P2, the intermediate layer 42 is then produced with a uniform cross-section so that an offset point 100 is also surrounded radially outwardly by modified substrate material 44.

[0190] In both process routes P1 and P2, an intermediate structure 40 is created, the intermediate hollow structure 46 of which has corresponding offset points 100; this is shown again in Figure 19D.

[0191] When the etching step is now performed, the etching selectivity of the etching medium 90' is sufficient to etch away thicker and thinner wall regions of the intermediate layer 42 without excessively damaging the surrounding substrate material 12a. Once the thinner wall regions of the intermediate layer 42 have been etched away, the etching medium 90' can already flow over and attack the substrate material 12a before the thicker wall regions are removed. However, the time required for the remaining intermediate layer 42 to be removed by the etching medium 90' is insufficient to damage the substrate material 12 already flowed over in a manner that cannot be tolerated.

[0192] As a result, the etching step produces corresponding tempering hollow structures 22 with satisfactory functionality even in the case of existing offset points 100 in the lateral surface of the intermediate hollow structures 46, as illustrated in Figure 21 D.

[0193] 3. Obtained substrate

[0194] Figure 22 now again shows the substrate 12 in the stage of the carrier substrate 12" with hollow tempering structures 22, which were obtained by the method explained above and are again represented by way of example by three tempering channels 34.1, 34.2 and 34.3. The hollow tempering structures 22 each define an inner surface 102, wherein for the sake of clarity only one inner surface 102 is provided with a reference symbol. Properties of the hollow tempering structures 22 or of the tempering channels 34 and of the substrate 12 as such are explained below, which are possible when applying the methods described above or result therefrom, wherein, where appropriate, properties already described are also taken up again and / or supplemented.

[0195] 3.1 Temperature control hollow structures / temperature control channels

[0196] By applying the first or the second process route P1 or P2 for forming the tempering hollow structures 22, substrates 12 with tempering hollow structures 22 are obtained, the inner surface 102 of which has, at least in some regions, an extremely high quality with a mean roughness Ra of between 10.0 pm and 5.0 pm, which can in particular be between 10.0 pm and 6.5 pm, between 10.0 pm and 8.0 pm, between 8.5 pm and 5.0 pm, between 7.0 pm and 5.0 pm or between 8.5 pm and 6.5 pm, or the inner surface 102 of which has, at least in some regions, an extremely high quality with a mean roughness Ra of 5.0 pm and less, which can in particular be between 5.0 pm and 0.1 pm, between 4.5 pm and 0.125 pm, between 4.0 pm and 0.15 pm, between 3.5 pm and 0.175 pm or between 3.0 pm and 0.2 pm.In practice, particularly good mean roughness values ​​Ra between 0.1 pm and 0.5 pm, between 0.15 pm and 0.45 pm, between 0.2 pm and 0.4 pm, and between 0.25 pm and 0.35 pm were achieved. However, the stated mean roughness values ​​Ra between 10.0 pm and 5.0 pm are also generally good results.

[0197] Figure 23A shows a topographic image of a surface region 104 of the inner surface 102 of such a hollow tempering structure 22, and Figure 23B shows a section along the section line designated 106 in Figure 23A, illustrating an average roughness Ra of approximately 0.28 pm achieved there. The surface region 104 has an extent of 254 pm x 190 pm.

[0198] The mean roughness values ​​Ra are determined and specified in accordance with DIN EN ISO 25178 (as of April 2023). The measurement was performed using a white light interferometer with 50x magnification, as is known per se. Figure 23A illustrates that by applying the first process route P1 or the second process route P1, a surface topography 108 is obtained, at least in surface areas of the inner surface 102 of the hollow tempering structures 22, whose geometric shape results from a superposition of countersink structures 110 extending into the substrate material 12a.

[0199] This is additionally illustrated schematically in Figure 24 using a longitudinal section of a tempering cavity structure 22, with the proportions significantly exaggerated and without reference to the image in Figure 23A. Only the lower transition between the tempering cavity structure 22 and the substrate material 12a shown in Figure 24 will be discussed below. Seven countersink structures 110.1, 110.2, 110.3, 110.4, 110.5, 110.6, and 110.7 can be seen there as examples with solid lines, which extend into the substrate material 12a.

[0200] The planned profile 80 of the tempering hollow structure 22, explained above with reference to Figures 13A and 13B and again shown with a dashed line in Figure 24, describes a reference surface from which the countersunk structures 108 extend into the substrate material 12a. The superposition of these countersunk structures 110 then results in the surface topography 108, the profile of which can be seen in the section shown in Figure 24 with a thicker solid line.

[0201] The surface topography 108 ultimately defines adjacent depression areas 112, between which peripheral regions 114 extend. In Figure 23, only a few of these depression areas and peripheral regions are provided with reference symbols.

[0202] Illustratively, these peripheral areas 114 form a kind of mountain ridge between two adjacent valleys in the form of two adjacent depressions 112. These peripheral areas 114 can in particular be linear.

[0203] The countersunk structures 110 can, in particular, be segments of bodies that are inherently point-symmetric or at least axially symmetric, such as spherical segments, ellipsoidal segments, or paraboloids. The resulting countersunk regions 112 can, in turn, be axially symmetric and, for example, follow a section of the outer surface of spherical segments, ellipsoidal segments, or paraboloids. In this case, their edge regions 114 are also axially symmetric. However, non-axisymmetric countersunk regions 112 with non-axisymmetric edge regions 114 can also arise and be present, which can be seen in Figure 23A based on the two countersunk regions designated by 112 and their edge regions designated by 114. The final geometry and dimension of a depression area 112 surrounded by a peripheral edge region 114 depends on the geometries and dimensions of the depression structures 110, which are understood as the basis for the formation of the depression area 112.For the sake of completeness, it should be noted that the countersunk structures 110 are distributed over the surface of the lateral surface 102, but Figure 25 can of course only show the section shown and no countersunk structures 110 and resulting countersunk regions 112 in front of and behind the paper plane.

[0204] A tempering channel 34 can have a diameter between 0.5 mm and 20 mm, with diameters between 1 mm and 5 mm being preferred.

[0205] The length of a temperature control channel 34 depends primarily on the dimension of the substrate 12 and is in practice at least 10 cm, but can also be at least 15 cm or at least 20 cm.

[0206] A temperature control channel 34 can be curved or at least have curved sections. As can be seen in Figure 22, the temperature control channels 34 follow the curvature of the support surface 14 in a central section 116 there, whereby this central section 116, which is thus already a curved section, extends between two sections 118 that are, in contrast, strongly curved. In Figure 22, only the central section 116 and the strongly curved sections 118 in the temperature control channel 34.1 have a reference numeral. The central section 116 designated there opens on the left in Figure 22 into the strongly curved section 118 there, which in turn merges into a straight section 120 that then ends at the opening 36 of the temperature control channel 34.1. Figure 25 shows section XXV of Figure 22 on an enlarged scale.

[0207] A strong curvature is understood to mean an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably approximately 90°. Preferably, a section 116 of the tempering channel 34 extends between two strongly curved sections 118 with an angle of curvature of approximately 90°, as shown in the present embodiment.

[0208] The curvature of a sharply curved section 118 usually follows an arc. For example, with a 90° bend, there are not two channel sections that are strictly perpendicular to each other.

[0209] An outer radius of curvature R, also illustrated in Figure 25, and the diameter D of a strongly curved section, here the strongly curved section 118, define a ratio R / D. Such a ratio R / D is preferably between 2 and 6, more preferably between 2.5 and 5, and especially preferably between 2.5 and 3.5.

[0210] These R / D ratios do not reflect Figure 25 or the other figures; for better visibility, the tempering channel 34.1 is shown schematically with a relatively larger diameter.

[0211] Relative to the support surface 14 of the substrate 12, a temperature control channel 34 extends, in particular, at a distance of 1.0 mm to 50.0 mm, 1.0 mm to 20.0 mm, 1.0 mm to 10.0 mm, or 1.0 mm to 5.0 mm. The distance is preferably determined relative to a normal to the support surface 14. The distance of the temperature control channel 34 from the support surface 14 can vary along its length.

[0212] 3.2 Substrat

[0213] Using the methods explained above, a substrate 12 provided with hollow tempering structures 22 is obtained, the shape of which has significant temporal stability. The shape of the support surface 14 changes by less than 100 pm, in particular by less than 50 pm, and further in particular by less than 25 pm, over a service life of the substrate 12 of up to 10 years, at least up to five years, and at least up to two years.

[0214] This fit stability is also maintained in a mirror 10 comprising a substrate 12 produced by the methods explained above and provided with the coating 16. Consequently, a mirror 10 is obtained whose fit changes by less than 100 pm, in particular by less than 50 pm, and further in particular by less than 25 pm, over a service life of the mirror 10 of up to 10 years, at least up to five years, and at least up to two years.

[0215] The high stability of the fit of the support surface 14 of the substrate 12 and the fit of the mirror 10 produced therefrom is achieved by the fact that the modified substrate material 44 is removed precisely and purposefully, so that a substrate with a particularly homogeneous structure is obtained or restored after the structure no longer has this structural homogeneity when the modified substrate material 44 is still present.

[0216] This is reflected in Figures 26 A, B and C, which are reproductions of the results of measurements of the fit of the support surface 14 of a substrate 122 processed in practice for a mirror before and after the etching process, wherein a surface image representation of the support surface 14 is shown at the top and a deviation profile along a measuring section is shown below.

[0217] The measurements were performed using an interferometric measuring system based on a Fizeau interferometer, providing a repeatability of 10 pm PMS and a pixel size of typically 0.12 mm x 0.12 mm.

[0218] Figure 26A shows the fit of the carrier surface 14 on the substrate 122 before the etching process with which the modified substrate material 44 is removed, and thus reflects the configuration of the substrate 12 with the intermediate structures 40 according to Figure 10, in which the modified substrate material 44 is still present. Depressions 124 are visible in the carrier surface 14, three of which are designated 124.1, 124.2, and 124.3 in the surface image representation and the deviation profile. These depressions 124 are present where the intermediate structures 40 are incorporated into the substrate material 12a below the carrier surface 14 and the modified substrate material 44 is present. As can be seen in Figure 26A, the depressions 124 follow the respective course of the intermediate structures 40, which in this case can be seen as rectilinear channels. The measuring section of the respective deviation profile of Figures 26A, B and C runs transversely to the channels.For comparison purposes, the substrate 122 is not provided with intermediate structures 40 under the entire support surface 14; the area to the right of the depressions 124 is unprocessed.

[0219] The depressions 124 arise due to the structural inhomogeneities in the substrate material 12a created there below the carrier surface 14 by the modified substrate material 44.

[0220] Figure 26B shows the fit of the support surface 14 in the substrate of Figure 26A after performing the etching process with which the modified substrate material 44 is removed, which corresponds to the configuration of the substrate 12 according to Figure 22. As Figure 26B shows and is clear from the deviation profile, the depressions 124 have significantly reduced after the removal of the modified substrate material 44 and the support surface 14 now has a smaller overall fit deviation.

[0221] Figure 26C shows a differential representation of the measurements according to Figures 26A and 26B and, in this context, also illustrates the largely unchanged areas of the carrier surface 14 without the underlying tempering hollow structures 22.

[0222] In any case, the pass measured according to Figure 26B shows the time stability explained above.

[0223] 4. Semiconductor technology system / projection exposure system

[0224] Figure 27 again illustrates a semiconductor technology system 6 using the example of a projection exposure system 200 for EUV semiconductor lithography. Other semiconductor technology systems, such as a mask inspection system or a wafer inspection system, sometimes contain the same or similar components as those explained here using the example of the EUV projection exposure system 200.

[0225] The projection exposure system 200 comprises an illumination system 202 with a radiation source 204 and illumination optics 206 for illuminating an object field 208 in an object plane 210, in which a reflective reticle 212 is arranged. In the illustrated embodiment, the radiation source 204 is an EUV radiation source that emits EUV radiation as working radiation 214, in particular in a wavelength range between 5 nm and 30 nm. The radiation source 204 can be a plasma source, for example, an LPP (Laser Produced Plasma) source or a GDPP (Gas Discharged Produced Plasma) source. Alternatively, a synchrotron-based radiation source or a free-electron laser (FEL) can be used as the radiation source 204.

[0226] Furthermore, the projection exposure system 200 includes projection optics 216 for imaging the object field 208 into an image field 218 located in an image plane 220 of the projection optics 216. A wafer bearing a light-sensitive layer (resist) is arranged in the image plane 220 as an example of an object 222. Components for the synchronous movement of the reticle 212 and the wafer 222 are only indicated in Figure 27 and are not provided with reference symbols.

[0227] The projection exposure system 200 comprises a plurality of optical elements 8 in the form of mirrors Mn, which are numbered according to their arrangement in the beam path of the projection exposure system 200. In the present case, a total of 10 mirrors M1 to M10 are present in the beam path.

[0228] Mirrors M3 and M4 are designed as facet mirrors containing a plurality of individual mirrors. The remaining mirrors Mn each comprise a mirror 10 with a monolithic mirror substrate 12 and a coating 16 supported thereon, as shown by way of example in Figure 1. For the sake of simplicity, these mirrors are indicated as cuboids in Figure 27. However, the surfaces of mirrors 10 exposed to the EUV radiation 214 and provided with the coating 16 are not planar in reality, but curved, as also illustrated in Figure 1.

[0229] Mirrors M1 to M4 in illumination system 206 serve to illuminate a section of reticle 212 with the desired illumination angle distribution. Mirrors M5 to M10 of projection optics 216 project this section onto wafer 222 in a reduced size. As a result, the structures contained in reticle 212 are imaged onto the light-sensitive layer carried by wafer 222. The object 222 is irradiated with working radiation 214 using optical elements 8, which in the present embodiment are designed as mirrors 10 for EUV projection exposure system 200 and whose coating is configured to reflect at least 50% of perpendicularly or nearly perpendicularly incident EUV light.

[0230] The semiconductor technology system 6 is part of a manufacturing process with which a structured electronic component 224 can be manufactured, which is shown schematically in Figure 27 with generated structures 226 as the result of an overall manufacturing process that includes further steps in addition to the process in the semiconductor technology system 6. However, it is relevant here that the semiconductor technology system 6 includes at least one optical element 8 that was manufactured using one of the methods of the process variants explained above.

[0231] The structured electronic component 224 is in particular a computer chip 228, in the production of which a projection exposure system, here the projection exposure system 200, is used, as mentioned at the beginning.

[0232] 5. Concluding remarks

[0233] All of the above methods, steps, procedures, concepts and principles can be combined with each other, which is also reflected in the combinations of features specified in the claims.

Claims

PATENT CLAIMS 1. A method for incorporating hollow tempering structures (22) into a substrate (12), in particular into a substrate (12) for an optical element (8), in particular for a mirror (10) for an EUV projection exposure system, comprising the following steps: (A) providing a substrate (12) consisting of a substrate material (12a); (B) producing an intermediate structure (40) comprising an intermediate layer (42) made of modified substrate material (44) and an intermediate hollow structure (46) which is at least partially delimited by the intermediate layer (42), wherein the modified substrate material (44) has an increased susceptibility to a chemically reactive treatment medium relative to the substrate material (12a); (C) introducing a chemically reactive treatment medium (90) into the intermediate hollow structure (46), by means of which the intermediate layer (42) is removed from the modified substrate material (44), thereby forming the tempering hollow structure (22); characterized in that the intermediate structure (40) is produced in step (B) by (B.1) successively focusing a modification light beam (56) onto modification sites (66) so that the modified substrate material (44) is formed at the modification sites (66); and (B.2) successively focusing an ablation light beam (70) on ablation sites (72) so that material (44; 12a) is removed at the ablation sites (72).

2. Method according to claim 1, characterized in that a first process route (P1) or a second process route (P2) is carried out, whereby in the first process route (P1), step (B.1) is carried out in a first process step (P1 -S1) and step (B.2) is carried out in a second process step (P1 -S2); and - in the second process route (P2), step (B.2) is carried out in a first process step (P2-S1) and step (B.1) is carried out in a second process step (P2-S2).

3. The method according to claim 2, characterized in that the first process route (P1) is carried out and in its first process step (P1-S1) by step (B.1) material structures (52) are produced which comprise modified substrate material (44); and in its second process step (P1-S2) material (44; 12a) is removed by step (B.2) such that the intermediate hollow structure (46) is produced and modified substrate material (44) of the material structure (52) is left standing for the intermediate layer (42).

4. The method according to claim 3, characterized in that in the first process step (P1 -S1) of the first process route (P1) the step (B.1) is carried out in such a way that material structures (52) of a first type (52-I) or material structures (52) of a second type (52-II) are produced, wherein - in material structures (52) of the first type (52-I), the modified substrate material (44) is produced to fill the cross-section; and - in material structures (52) of the second type (52-II), modified substrate material (44) is produced in such a way that a core region of substrate material (12a) remains which is at least partially delimited by modified substrate material (44).

5. The method according to claim 4, characterized in that in the second process step (P1 -S2) of the first process route (P1), step (B.2) is carried out in such a way that, in the case of material structures (52) of the first type (52-I), modified substrate material (44) and, in the case of material structures (52) of the second type (52-II), the substrate material (12a) of the core region is removed in such a way that the intermediate hollow structure (46) is produced and the intermediate layer (42) is formed by the modified substrate material (44) of the material structure (52) left standing.

6. The method according to one of claims 2 to 5, characterized in that the second process route (P2) is carried out and in its first process step (P2-S1) by step (B.2) substrate material (12a) of the substrate (12) is removed such that the intermediate hollow structure (46) is produced; and in its second process step (P2-S2) by step (B.1) the intermediate layer (42) is produced from modified material (44) so ​​that the intermediate structure (40) is created.

7. The method according to claim 6, characterized in that in the second process step (P2-S2) of the second process route (P2), the intermediate hollow structure (46) is filled with an auxiliary liquid (84) so ​​that it is filled with the auxiliary liquid when step (B.1) is carried out, wherein the auxiliary liquid is preferably held as a standing liquid volume.

8. The method according to claim 7, characterized in that an auxiliary liquid (84) is used whose refractive index m at the wavelength of the modification light beam (56) matches the refractive index nM of the substrate material (12a) at the same wavelength with a tolerance of less than 20%, preferably with a tolerance of less than 10%, more preferably with a tolerance of less than 5% and particularly preferably with a tolerance of less than 1% based on the refractive index nM of the substrate material (12a).

9. Method according to one of claims 1 to 8, characterized in that the removal locations (72) are subjected to a flushing fluid (76) while step (B.2) is carried out, whereby removed material (44; 12a) is flushed away.

10. The method according to any one of claims 1 to 9, characterized in that the intermediate hollow structure (40) in step (C) is flowed through at least temporarily, preferably continuously, by the chemically active treatment medium (90).

11. The method according to any one of claims 1 to 10, characterized in that the chemically active treatment medium (90) is an etching medium (90'), an oxidizing agent or a reducing agent, and in particular is an etching medium (90') by means of which, in step (C), the intermediate layer (42) is removed from the modified substrate material (44) by an etching process.

12. A method for producing an optical element, in particular for producing a mirror (10) for an EUV projection exposure system, characterized in that tempering hollow structures (22) are incorporated into the substrate (12) according to the method according to one of claims 1 to 11 and further processing comprises one or more steps of chemical and / or physical processing of at least one surface of the substrate (12) and the production or application of a coating (16) to the substrate (12) which is at least designed to reflect at least 50% of EUV light incident perpendicularly or almost perpendicularly.

13. Substrate, preferably a monolithic substrate, for producing an optical element, in particular for producing a mirror (10) for an EUV projection exposure system, wherein the substrate (12) has tempering hollow structures (22), in particular tempering hollow structures (22) which are incorporated into the substrate (12) according to the method according to one of claims 1 to 11, characterized in that at least one tempering hollow structure (22) defines an inner lateral surface (102) which, at least in regions, has a mean roughness Ra according to DIN EN ISO 25178, as of 04 / 2023, between 10.0 pm and 5.0 pm, which can in particular be between 10.0 pm and 6.5 pm, between 10.0 pm and 8.0 pm, between 8.5 pm and 5.0 pm, between 7.0 pm and 5.0 pm or between 8.5 pm and 6.5 pm, or which at least has a mean roughness value Ra of 5.0 pm and less in some areas, which is in particular between 5.0 pm and 0.1 pm, preferably between 4.5 pm and 0.125 pm, between 4.0 pm and 0.15 pm, between 3.5 pm and 0.175 pm or between 3.0 pm and 0.2 pm.

14. Substrate, preferably a monolithic substrate, for producing an optical element, in particular for producing a mirror (10) for an EUV projection exposure system, wherein the substrate (12) has tempering hollow structures (22), in particular tempering hollow structures (22) which are incorporated into the substrate (12) according to the method according to one of claims 1 to 11, characterized in that at least one tempering hollow structure (22) defines an inner lateral surface (102) which has a surface topography (108) whose geometric shape results from an at least regional superposition of countersunk structures (110) which extend into a substrate material (12a) of the substrate (12).

15. Substrate according to claim 14, characterized in that one or more countersunk structures (110) are segments of bodies that are point-symmetric or at least axisymmetric.

16. Substrate according to claim 14 or 15, characterized in that the surface topography (108) defines adjacent depression regions (112) between which edge regions (114), in particular linear edge regions (114), run.

17. Substrate according to claim 16, characterized in that one or more countersunk regions (112) are axisymmetric or non-axisymmetric.

18. Substrate according to claim 17, characterized in that an axisymmetric countersunk region (112) follows a portion of the outer surface of a spherical segment, an ellipsoidal segment or a paraboloid.

19. Substrate according to one of claims 13 to 18, characterized in that at least one tempering hollow structure (22) is a tempering channel (34) which has one or more of the following features: a) the tempering channel (34) has a diameter between 0.5 mm and 20 mm, preferably between 1 mm and 5 mm; b) the tempering channel (34) has a length of at least 10 cm, at least 15 cm or at least 20 cm. c) the tempering channel (34) is curved or has at least one curved section (116; 118); d) the tempering channel (34) has a section (116) which follows the curvature of a support surface (14) for a coating (16) of the substrate (12); e) the tempering channel (34) has a strongly curved section (118) which has an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90°;f) the temperature control channel (34) has a strongly curved section (118) which has an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90°, and follows an arc; g) the temperature control channel (34) has a strongly curved section (118) which has an angle of curvature between 60° and 120°, in particular between 80° and 100°, preferably of approximately 90°, and follows an arc and defines an outer radius of curvature R and a diameter D, wherein a ratio R / D of the radius of curvature R to the diameter D is between 2 and 6, preferably between 2.5 and 5, and particularly preferably between 2.5 and 3.5; h) the temperature control channel (34) extends at a distance of 1.0 mm to 50.0 mm, 1.0 mm to 20.0 mm, 1.0 mm to 10.0 mm or 1.0 mm to 5.0 mm from a support surface (14) for a coating (16) of the substrate (12); 20. Substrate, preferably a monolithic substrate, for producing an optical element (8), in particular for producing a mirror (10) for an EUV projection exposure system, which has tempering hollow structures (22), in particular tempering hollow structures (22) which are incorporated into the substrate (12) according to the method according to one of claims 1 to 11, and defines a carrier surface (14) for a coating (16), characterized in that the fit of the carrier surface (14) changes by less than 100 pm, in particular by less than 50 pm and further in particular by less than 25 pm over a service life of the substrate (12) of up to 10 years, at least up to five years and at least up to two years.

21. Substrate having the features of claim 13 and having the features of at least one of claims 14 to 19.

22. Substrate having the features of claims 20 and 21.

23. Substrate according to one of claims 13 to 22, characterized in that tempering hollow structures (22) are incorporated according to the method according to one of claims 1 to 11.

24. Optical element, in particular a mirror (10) for an EUV projection exposure system, with a substrate (12), characterized in that the substrate (12) is a substrate (12) according to one of claims 12 to 23.

25. Optical element, in particular mirror (10) for an EUV projection exposure system, with a substrate (12), in particular optical element according to claim 24, characterized in that the fit of the optical element (8) with a service life of the optical element of up to 10 years, at least up to five years and at least up to two years by less than 100 pm, in particular by less than 50 pm and further in particular by less than 25 pm.

26. Optical element according to one of claims 24 or 25, characterized in that the optical element (8) is a mirror (10) for an EUV projection exposure system, wherein the substrate (12) has a carrier surface (14) which carries a coating (16) which is at least designed to reflect at least 50% of perpendicularly or nearly perpendicularly incident EUV light.

27. Optical element according to claims 26 and 25 and 24.

28. A semiconductor technology system, in particular an EUV projection exposure system (200), a mask inspection system or a wafer inspection system, in which an object (222) can be irradiated with a working radiation (214) using at least one optical element (8), characterized in that the optical element (8) is an optical element (8) according to one of claims 24 to 27.

29. System according to claim 28, characterized in that the system (6) is an EUV projection exposure system (200) and that the at least one optical element (8) is a mirror (10) according to claim 26.

30. Structured electronic component, characterized in that the structured electronic component (224) was manufactured using a semiconductor technology system (6) according to claim 28 or 29 and using at least one optical element (8) according to one of claims 24 to 27.

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