Semiconductor package and semiconductor package manufacturing method

Abstract

Image quality is improved in this cavity structure semiconductor package.　This semiconductor package is provided with a semiconductor chip, a glass, and a sealing resin. In this semiconductor package that is provided with the semiconductor chip, the glass, and the sealing resin, a plurality of pixels are arranged on a light receiving surface of the semiconductor chip. Additionally, in this semiconductor package, the glass is placed on the semiconductor chip without interposing an organic member therebetween. Furthermore, in this semiconductor package, the sealing resin seals a cavity, which is a space between the semiconductor chip and the glass.

Description

Semiconductor package and method for manufacturing semiconductor package

[0001] The present technology relates to a semiconductor package, and more particularly to a semiconductor package having a cavity and a method for manufacturing the semiconductor package.

[0002] Conventionally, when mounting an image sensor in a semiconductor package, a structure has been used in which the image sensor chip is connected to a substrate by wire bonding, a glass is placed on the substrate, and the cavity is sealed with resin. For example, a semiconductor package has been proposed in which a photosensitive rib resin is provided around the cavity (see, for example, Patent Document 1).

[0003] International Publication No. 2022 / 201726

[0004] The above-mentioned conventional technology aims to miniaturize semiconductor packages by molding photosensitive rib resin with high precision through exposure and development. However, the above-mentioned conventional technology has the risk of contaminating the surface of the image sensor due to moisture and outgassing from the rib resin into the cavity. Also, light reflected from the surface of the rib resin may cause flare. Furthermore, variations in the amount of resin in the rib resin may cause tilting of the glass, degrading its optical properties. These factors result in a problem of degraded image quality.

[0005] This technology was developed in light of these circumstances, and aims to improve image quality in semiconductor packages with cavity structures.

[0006] The present technology has been made to solve the above-mentioned problems, and a first aspect thereof is a semiconductor package including a semiconductor chip having a plurality of pixels arranged on a light-receiving surface, glass placed on the semiconductor chip without an organic material therebetween, and a sealing resin that seals a cavity that is a space between the semiconductor chip and the glass, thereby improving image quality.

[0007] In addition, in this first aspect, each of the plurality of pixels may include an on-chip lens, and the on-chip lens may be in contact with the glass, thereby providing an effect of minimizing the distance between the semiconductor chip and the glass.

[0008] In this first aspect, the semiconductor chip may include a chip-side protrusion surrounding a side surface of the cavity, thereby preventing the sealing resin from flowing into the pixel array portion.

[0009] In addition, in this first aspect, the glass may include a sawtooth-shaped anchor portion formed along the outer periphery of the glass, thereby providing the effect of temporarily fixing the glass.

[0010] In the first aspect, the glass may include a glass-side convex portion surrounding a side surface of the cavity, thereby preventing the sealing resin from flowing into the pixel array portion.

[0011] In the first aspect, the glass may include a recess surrounding the periphery of the plurality of pixels, thereby preventing the sealing resin from flowing into the pixel array portion.

[0012] In addition, in this first aspect, each of the plurality of pixels may include an on-chip lens, and the on-chip lens may not be in contact with the glass, thereby providing an effect of suppressing damage to the on-chip lens.

[0013] In addition, in this first aspect, the glass may include a glass-side convex portion surrounding a side surface of the cavity, and the semiconductor chip may include a chip-side convex portion surrounding the side surface of the cavity, thereby providing the effect of adjusting the distance between the semiconductor chip and the glass by the thickness of the convex portion.

[0014] In addition, in this first aspect, the semiconductor chip may include a chip-side protrusion surrounding a side surface of the cavity, thereby providing an effect that the distance between the semiconductor chip and the glass is adjusted by the thickness of the chip-side protrusion.

[0015] In the first aspect, the glass may include a glass-side convex portion surrounding a side surface of the cavity, thereby providing the effect of adjusting the distance between the semiconductor chip and the glass by the thickness of the glass-side convex portion.

[0016] The first side surface may further include an inorganic film surrounding the side surface of the cavity, thereby providing the effect of adjusting the distance between the semiconductor chip and the glass by the thickness of the inorganic film.

[0017] In the first aspect, one of the two surfaces of the glass may face the light receiving surface, and the other surface may have a larger area than the one surface, which makes it easier to remove the glass and reduces flare.

[0018] Furthermore, the first side surface may further include an outer resin, the semiconductor chip may include a chip-side protrusion surrounding a side surface of the cavity, and the outer resin may be formed around the chip-side protrusion, thereby providing the effect of alleviating thermal stress.

[0019] A second aspect of the present technology is a method for manufacturing a semiconductor package, the method including: a mounting step of mounting a semiconductor chip having a plurality of pixels arranged on a light-receiving surface on a semiconductor substrate; a mounting step of mounting glass on the semiconductor chip without an organic member therebetween; and a sealing step of sealing a cavity between the semiconductor chip and the glass with a sealing resin, thereby producing a semiconductor package with high image quality.

[0020] In the second aspect, the sealing resin may be applied in a liquid state and then cured in the sealing step, thereby sealing the cavity.

[0021] In the second aspect, the sealing resin may be transfer molded in the sealing step, thereby sealing the cavity.

[0022] 1 is a block diagram showing an example of a configuration of an electronic device according to a first embodiment of the present technology; FIG. 2 is a cross-sectional view showing an example of a configuration of a semiconductor package according to the first embodiment of the present technology; FIG. 3 is a cross-sectional view showing a semiconductor package according to a comparative example; FIG. 4 is a view for explaining a manufacturing method up to wire bonding according to the first embodiment of the present technology; FIG. 5 is a view for explaining a manufacturing method up to forming a sealing resin according to the first embodiment of the present technology; FIG. 6 is a flowchart showing an example of a manufacturing method of a semiconductor package according to the first embodiment of the present technology; FIG. 7 is a view for explaining a manufacturing method of a semiconductor package according to a first modified example of the first embodiment of the present technology; FIG. 8 is a cross-sectional view showing an example of a configuration of a semiconductor package according to a second modified example of the first embodiment of the present technology; FIG. 9 is a cross-sectional view of a semiconductor package in a case where the area of ​​a convex portion is increased according to the second modified example of the first embodiment of the present technology; FIG. 10 is a diagram for explaining a flare suppression effect in the second embodiment of the present technology. FIG. 11 is a cross-sectional view showing a configuration example of a semiconductor package in a first modified example of the second embodiment of the present technology. FIG. 12 is a cross-sectional view showing a configuration example of a semiconductor package in a second modified example of the second embodiment of the present technology. FIG. 13 is a cross-sectional view showing a configuration example of a semiconductor package in a third modified example of the second embodiment of the present technology. FIG. 14 is a cross-sectional view showing a configuration example of a semiconductor package in a third embodiment of the present technology. FIG. 15 is a cross-sectional view showing a configuration example of a semiconductor package in a fourth embodiment of the present technology. FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system. FIG. 17 is an explanatory diagram showing an example of an installation position of an imaging unit.

[0023] Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described. The descriptions will be given in the following order: 1. First embodiment (an example in which glass is placed without resin) 2. Second embodiment (an example in which glass is placed without resin so as not to come into contact with the on-chip lens) 3. Third embodiment (an example in which tapered glass is placed without resin) 4. Fourth embodiment (an example in which glass is placed without resin and resin is formed on the outside of the convex portion) 5. Example of application to a moving body

[0024] 1 is a block diagram showing an example of the configuration of an electronic device 100 according to a first embodiment of the present technology. The electronic device 100 is a device for capturing image data, and includes an optical unit 110, a solid-state image sensor 120, and a DSP (Digital Signal Processing) circuit 130. The electronic device 100 further includes a display unit 140, an operation unit 150, a bus 160, a frame memory 170, a storage unit 180, and a power supply unit 190. Examples of the electronic device 100 include digital cameras such as digital still cameras, as well as smartphones, personal computers, and in-vehicle cameras.

[0025] The optical unit 110 collects light from a subject and guides it to the solid-state imaging element 120. The solid-state imaging element 120 generates image data by photoelectric conversion in synchronization with a vertical synchronization signal. Here, the vertical synchronization signal is a periodic signal with a predetermined frequency that indicates the timing of imaging. The solid-state imaging element 120 supplies the generated image data to the DSP circuit 130.

[0026] The DSP circuit 130 performs predetermined signal processing on the image data from the solid-state image sensor 120. The DSP circuit 130 outputs the processed image data via a bus 160 to a frame memory 170 or the like.

[0027] The display unit 140 displays image data. For example, a liquid crystal panel or an organic EL (Electro Luminescence) panel is assumed as the display unit 140. The operation unit 150 generates an operation signal in accordance with a user's operation.

[0028] The bus 160 is a common path for the optical unit 110, solid-state image sensor 120, DSP circuit 130, display unit 140, operation unit 150, frame memory 170, storage unit 180, and power supply unit 190 to exchange data with one another.

[0029] The frame memory 170 holds image data. The storage unit 180 stores various data such as image data. The power supply unit 190 supplies power to the solid-state imaging device 120, the DSP circuit 130, the display unit 140, etc.

[0030] In the above-described configuration, for example, the solid-state imaging element 120 is mounted in a semiconductor package, which will be described later.

[0031] 2 is a cross-sectional view showing an example of a configuration of a semiconductor package 200 according to the first embodiment of the present technology. The semiconductor package 200 includes a glass 210, a sensor chip 220, a semiconductor substrate 230, and a sealing resin 240.

[0032] The sensor chip 220 is bonded to one of the two surfaces of the semiconductor substrate 230 with a die bond material 252 and electrically connected to it with wires 251. A predetermined number of external terminals 253 (solder balls, etc.) are formed on the other of the two surfaces of the semiconductor substrate 230. Hereinafter, the direction from the semiconductor substrate 230 to the sensor chip 220 will be referred to as the "up" direction. A predetermined axis parallel to the top surface of the semiconductor substrate 230 will be referred to as the "X-axis," and a direction perpendicular to the top surface will be referred to as the "Z" axis. An axis perpendicular to the X-axis and Z-axis will be referred to as the "Y-axis." The figure is a cross-sectional view seen from the Y-axis direction.

[0033] The sensor chip 220 is a chip on which the solid-state imaging element 120 is provided. A pixel array section 222 is formed on the upper surface of this sensor chip 220. In this pixel array section 222, a plurality of pixels (not shown) are arranged in a two-dimensional lattice pattern. Each pixel includes an OCL 223. Although the pixel array section 222 on which the OCL 223 is formed is not flat microscopically, its periphery is flat, and the upper surface of the sensor chip 220 can be treated as a flat plane macroscopically. For this reason, the upper surface of the sensor chip 220 can be expressed as a "substantially flat" plane. The sensor chip 220 is an example of a semiconductor chip as defined in the claims.

[0034] Both surfaces of the glass 210 are flat and have the same area. The glass 210 is placed so that its lower surface is in contact with the OCL 223 without an organic material such as resin interposed therebetween. The sealing resin 240 seals the side surfaces of the glass 210 and the sensor chip 220. The space surrounded by the sealing resin 240, the lower surface of the glass 210, and the upper surface of the sensor chip 220 is called a "cavity." The area of ​​the sensor chip 220 is larger than that of the glass 210, and one end of a wire 251 is connected to the periphery of the cavity on the upper surface of the sensor chip 220. To prevent the sealing resin 240 from flowing into the cavity before hardening, a resin with a sufficiently high viscosity or a resin containing relatively large fillers is used as the sealing resin 240.

[0035] In summary, a plurality of pixels are arranged in a pixel array section 222 on the upper surface (in other words, the light-receiving surface) of the semiconductor chip. The glass 210 is placed on the sensor chip 220 without an organic material in between, so that the lower surface is in contact with the OCL 223. The space (cavity) between the glass 210 and the sensor chip 220 is sealed with a sealing resin 240.

[0036] Here, a semiconductor package having a structure in which a rib resin is disposed between the glass 210 and the sensor chip 220 is assumed as a comparative example.

[0037] FIG. 3 is a cross-sectional view of a semiconductor package according to a comparative example. In this comparative example, a rib resin 255 is formed around the pixel array section 222, and a glass 210 is placed on top of the rib resin 255. In this structure, moisture and outgassing may be emitted from the rib resin 255 into the cavity during heating, potentially causing water marks (WM). Light reflected on the surface of the rib resin 255 may also cause flare. Furthermore, variations in the amount of resin in the rib resin 255 may cause the glass 210 to tilt, as shown in the figure, potentially degrading its optical characteristics. These WM, flare, and deterioration of optical characteristics can lead to problems such as reduced image quality.

[0038] 2, in which the glass 210 is mounted on the sensor chip 220 without an organic component such as the rib resin 255, the absence of the rib resin 255 makes it possible to suppress the occurrence of water movement (WM) and flare. Furthermore, the absence of the rib resin 255 also makes it possible to suppress deterioration of optical characteristics due to variations in the amount of resin. By suppressing water movement, flare, and deterioration of optical characteristics, it is possible to improve image quality compared to the comparative example.

[0039] Note that a configuration in which the glass 210 and the sensor chip 220 are bonded together with a transparent resin can also suppress WM, flare, and deterioration of optical characteristics, but this is not preferred because it requires adjustment of the refractive index, etc., and there is a risk of voids occurring within the transparent resin.

[0040] 4 and 5, a method for manufacturing the semiconductor package 200 will be described. First, as illustrated in Fig. 4, in a wafer including a plurality of semiconductor substrates 230, die bonding and wire bonding of the sensor chip 220 are performed on each of the semiconductor substrates 230.

[0041] 5A, the glass 210 is placed on each of the semiconductor substrates 230 by a glass loading collet 301. Next, as shown in FIG. 5B, a liquid sealing resin 240 is applied. For example, a thermosetting resin is used as the sealing resin 240.

[0042] Next, as shown in Fig. 1C, the sealing resin 240 is hardened by heat or the like, and the device is diced. Then, various processes such as forming external terminals are carried out as necessary.

[0043] 6 is a flowchart showing an example of a method for manufacturing the semiconductor package 200 according to the first embodiment of the present technology. The sensor chip 220 is die-bonded and wire-bonded to each semiconductor substrate 230 (step S901). Then, the glass 210 is mounted on the sensor chip 220 (step S902), and a liquid sealing resin 240 is applied (step S903). Next, the sealing resin 240 is hardened by heat or the like, and diced (step S904). Various processes, such as forming external terminals, are then performed as necessary, completing the manufacturing process for the semiconductor package.

[0044] As described above, according to the first embodiment of the present technology, the glass 210 is mounted on the sensor chip 220 so that the OCL 223 is in contact with the lower surface of the glass 210 without using a rib resin, thereby making it possible to suppress WM, flare, and deterioration of optical characteristics, thereby improving the image quality of image data.

[0045] [First Modification] In the first embodiment described above, the sealing resin 240 is applied and cured, but this manufacturing method is not limited to this. The manufacturing method of the semiconductor package 200 in this first modification of the first embodiment differs from the first embodiment in that the sealing resin 240 is transfer molded.

[0046] 7 is a diagram for explaining a manufacturing method of the semiconductor package 200 according to the first modified example of the first embodiment of the present technology. As illustrated in FIG. 7A, die bonding and wire bonding of the sensor chip 220 are performed on each of the semiconductor substrates 230. Next, the glass 210 is placed on each of the semiconductor substrates 230 by a glass mounting collet 302.

[0047] Then, as shown in Fig. 1B, the glass-mounted collet 302 is used as a mold to transfer-mold the sealing resin 240. In transfer molding, frictional heat is generated, so the thermal curing time can be made shorter than in the first embodiment, making manufacturing easier.

[0048] As described above, according to the first embodiment of the present technology, the sealing resin 240 is transfer molded, which facilitates manufacturing.

[0049] [Second Modification] In the first modification of the first embodiment described above, the flat lower surface of the glass 210 is placed on the substantially flat upper surface of the sensor chip 220, but with this configuration, there is a risk that the sealing resin 240 may flow into the pixel array section 222 before hardening. The semiconductor package 200 in this second modification of the first embodiment differs from the first modification of the first embodiment in that a convex portion is formed on the upper surface of the sensor chip 220.

[0050] 8 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a second modification of the first embodiment of the present technology. In the second modification of the first embodiment, a chip-side convex portion 221 is formed on the upper surface of a sensor chip 220, protruding upward from the plane on which pixels are formed so as to surround the side surfaces of the cavity. In the figure, the Z coordinate of the plane on which the pixels are formed is Z3, and the Z coordinate of the upper surface of the chip-side convex portion 221 is Z2. Furthermore, on the left side, the X coordinate of the outer periphery of the glass 210 is X2, and the X coordinate of the inner periphery of the chip-side convex portion 221 is X3. In this case, the rectangular area surrounded by (X2, Z2), (X2, Z3), (X3, Z2), and (X3, Z3) corresponds to the chip-side convex portion 221 at the left end.

[0051] The glass 210 is bonded to the upper surface of the chip-side convex portion 221. The thickness of the chip-side convex portion 221 is adjusted to a value such that the lower surface of the glass 210 contacts the upper end of the OCL 223.

[0052] As illustrated in the figure, by forming a chip-side convex portion 221 on the upper surface of the sensor chip 220 , it is possible to prevent the sealing resin 240 from flowing into the pixel array portion 222 .

[0053] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0054] 8, the outer periphery of the chip-side convex portion 221 is inside the outer periphery of the sensor chip 220, but as illustrated in Fig. 9, the outer periphery of the chip-side convex portion 221 can also be outside the outer periphery of the sensor chip 220 (for example, the same as the outer periphery of the sensor chip 220). For example, if the X coordinate of the outer periphery of the sensor chip 220 on the left side is X1, then the rectangular area surrounded by (X1, Z2), (X1, Z3), (X3, Z2), and (X3, Z3) corresponds to the chip-side convex portion 221 on the left end.

[0055] 10 is an example of a top view of a sensor chip 220 according to a second modified example of the first embodiment of the present technology. As illustrated in the drawing, when viewed from the Z-axis direction, the chip-side convex portion 221 is formed in a frame shape so as to surround the periphery of the pixel array portion 222. In the drawing, thick lines indicate the outer and inner peripheries of the chip-side convex portion 221.

[0056] As shown in FIG. 11A, in a second modification of the first embodiment, sawtooth anchor portions 212 can be formed on the surface of the glass 210 along the outer periphery.

[0057] Then, the glass 210 is turned upside down, and as illustrated in b in the figure, the glass 210 is mounted by the glass mounting collet 301. At this time, the anchor portion 212 bites into at least a part of the chip-side convex portion 221 of the sensor chip 220, and the glass 210 is temporarily fixed by the anchor effect.

[0058] Thus, according to the second variant of the first embodiment of the present technology, the chip side convex portion 221 is formed on the upper surface of the sensor chip 220, thereby preventing the sealing resin 240 from flowing into the pixel array portion 222.

[0059] [Third Modification] In the first modification of the first embodiment described above, the flat lower surface of the glass 210 is placed on the substantially flat upper surface of the sensor chip 220, but with this configuration, there is a risk that the sealing resin 240 may flow into the pixel array section 222 before hardening. The semiconductor package 200 in this third modification of the first embodiment differs from the first modification of the first embodiment in that a convex portion is formed on the lower surface of the glass 210.

[0060] 12 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a third modification of the first embodiment of the present technology. In the third modification of the first embodiment, a glass 210 has a lower surface on which a glass-side convex portion 211 is formed, protruding downward from the lower surface so as to surround the side surface of the cavity. In the figure, the Z coordinate of the lower surface of the glass-side convex portion 211 is Z3, and the Z coordinate of the area inside the glass-side convex portion 211 is Z2. On the left side, the X coordinate of the outer periphery of the glass 210 is X2, and the X coordinate of the inner periphery of the glass-side convex portion 211 is X3. In this case, the rectangular area surrounded by (X2, Z2), (X2, Z3), (X3, Z2), and (X3, Z3) corresponds to the leftmost glass-side convex portion 211.

[0061] The lower surface of the glass-side convex portion 211 is bonded to the upper surface of the sensor chip 220. Here, the thickness of the glass-side convex portion 211 is adjusted to a value such that the area of ​​the lower surface of the glass 210 inside the glass-side convex portion 211 comes into contact with the upper end of the OCL 223.

[0062] As illustrated in the figure, by forming a glass-side convex portion 211 on the lower surface of the glass 210 , it is possible to prevent the sealing resin 240 from flowing into the pixel array portion 222 .

[0063] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0064] As described above, according to the third variant of the first embodiment of the present technology, the glass side convex portion 211 is formed on the underside of the glass 210, thereby preventing the sealing resin 240 from flowing into the pixel array portion 222.

[0065] [Fourth Modification] In the first modification of the first embodiment described above, the flat lower surface of the glass 210 is placed on the substantially flat upper surface of the sensor chip 220, but with this configuration, there is a risk that the sealing resin 240 may flow into the pixel array section 222 before hardening. The semiconductor package 200 in this fourth modification of the first embodiment differs from the first modification of the first embodiment in that a recess is formed in the upper surface of the sensor chip 220.

[0066] 13 is a cross-sectional view showing a configuration example of a semiconductor package 200 in a fourth modified example of the first embodiment of the present technology. In the fourth modified example of the first embodiment, a recess 224 is formed on the upper surface of the sensor chip 220, recessed downward from the plane on which the pixels are formed, so as to surround the periphery of the pixel array section 222. In the figure, the Z coordinate of the plane on which the pixels are formed is set to Z3, and the Z coordinate of the lower surface of the recess 224 is set to Z4. Also, on the left side, the X coordinate of the outer periphery of the recess 224 is set to X3, and the X coordinate of the inner periphery of the recess 224 is set to X4. In this case, the rectangular area surrounded by (X3, Z3), (X4, Z3), (X3, Z4), and (X4, Z4) corresponds to the leftmost recess 224.

[0067] As in the first embodiment, the glass 210 is placed so that its lower surface is in contact with the OCL 223 .

[0068] As illustrated in the same figure, by forming a recess 224 on the upper surface of the sensor chip 220, the sealing resin 240 flows preferentially into the recess 224, thereby preventing the sealing resin 240 from flowing into the pixel array section 222.

[0069] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0070] As described above, according to the fourth variant of the first embodiment of the present technology, the recess 224 is formed on the upper surface of the sensor chip 220, thereby preventing the sealing resin 240 from flowing into the pixel array section 222.

[0071] 2. Second Embodiment In the first modification of the first embodiment described above, the glass 210 is placed so that the lower surface of the glass 210 is in contact with the OCL 223. However, a certain gap may be provided between the lower surface of the glass 210 and the OCL 223. The semiconductor package 200 in this second embodiment differs from the first modification of the first embodiment in that the lower surface of the glass 210 is not in contact with the OCL 223.

[0072] 14 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a second embodiment of the present technology. In this second embodiment, a chip-side convex portion 221 is formed on the upper surface of a sensor chip 220 so as to surround the side surface of the cavity. Also, a glass-side convex portion 211 is formed on the lower surface of a glass 210 so as to surround the side surface of the cavity.

[0073] In the figure, the Z coordinate of the plane on which the pixels are formed is Z3, and the Z coordinate of the top surface of the chip-side convex portion 221 is Z2. This Z2 is adjusted to be the upper end of the OCL 222. Furthermore, on the left side, the X coordinate of the outer periphery of the sensor chip 220 is X1, and the X coordinate of the inner periphery of the chip-side convex portion 221 is X3. In this case, the rectangular area surrounded by (X1, Z2), (X1, Z3), (X3, Z2), and (X3, Z3) corresponds to the chip-side convex portion 221 at the left end. Note that the outer periphery of the chip-side convex portion 221 can also be made the same as the outer periphery of the glass 210.

[0074] The lower surface of glass-side convex portion 211 is bonded to the upper surface of chip-side convex portion 221. In the figure, the Z coordinate of the area inside glass-side convex portion 211 is set to Z1. On the left side, the X coordinate of the outer periphery of glass 210 is set to X2, and the X coordinate of the inner periphery of glass-side convex portion 211 is set to X5. In this case, the rectangular area surrounded by (X2, Z1), (X2, Z2), (X5, Z1), and (X5, Z2) corresponds to the leftmost glass-side convex portion 211.

[0075] The distance from Z1 inside the glass-side convex portion 211 to Z3 of the plane on which the pixels are formed is adjusted to, for example, 5 to 10 micrometers (μm).

[0076] As illustrated in the figure, by leaving a certain gap between the lower surface of the glass 210 and the OCL 223, damage to the OCL 223 due to contact with the glass 210 can be suppressed.

[0077] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0078] As shown in the second modification of the first embodiment, a sawtooth anchor portion can be formed on the lower surface of the glass-side convex portion 211 .

[0079] 15 is a diagram for explaining the flare suppression effect in the second embodiment of the present technology. In the figure, a shows a cross-sectional view of a semiconductor package 200 in a comparative example in which a rib resin 255 is formed around a pixel array section 222. In the figure, b shows a cross-sectional view of the semiconductor package 200 in the second embodiment.

[0080] As illustrated in the figure, in the comparative example, there is a risk of flare occurring when the pixel array section 222 receives light reflected by the rib resin 255 or the lower surface of the glass 210. The arrow in the figure indicates the trajectory of incident light.

[0081] On the other hand, as shown in the example of b in the figure, in the second embodiment, since there is no rib resin 255, there is no light reflected by the rib resin 255, and flare due to that reflected light can be suppressed. Also, since the distance from the pixel to the underside of the glass 210 is shorter than in the comparative example, flare due to light reflected by the underside of the glass 210 can be suppressed. The arrow in the example of b in the figure indicates the trajectory of incident light.

[0082] Thus, according to the second embodiment of the present technology, the glass 210 is placed so that the lower surface does not come into contact with the OCL 223 by forming the glass side convex portion 211 and the chip side convex portion 221, thereby suppressing damage to the OCL 223.

[0083] [First Modification] In the second embodiment described above, both the glass-side convex portion 211 and the chip-side convex portion 221 are formed, but it is also possible to form only one of them. The semiconductor package 200 in this first modification of the second embodiment differs from the first embodiment in that only the chip-side convex portion 221 is formed.

[0084] 16 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a first modified example of the second embodiment of the present technology. In this first modified example of the second embodiment, a chip-side convex portion 221 is formed on the upper surface of the sensor chip 220 so as to surround the side surface of the cavity. On the other hand, the lower surface of the glass 210 is flat.

[0085] The thickness of the chip-side convex portion 221 is adjusted to a value that prevents the lower surface of the glass 210 from contacting the upper end of the OCL 223. For example, the distance from Z1 on the upper surface of the chip-side convex portion 221 to Z3 on the plane on which the pixels are formed (i.e., the thickness) is adjusted to 5 to 10 micrometers (μm).

[0086] By adjusting the thickness of the chip-side convex portion 221 to a value that does not contact the upper end of the OCL 223, the glass-side convex portion 211 becomes unnecessary, and processing of the glass 210 becomes unnecessary.

[0087] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0088] As shown in the second modification of the first embodiment, sawtooth anchor portions can be formed on the lower surface of the glass 210 .

[0089] Thus, according to the first variant of the second embodiment of the present technology, the chip side convex portion 221 is formed, and the glass 210 is placed so that the lower surface does not contact the OCL 223, thereby making the glass side convex portion 211 unnecessary.

[0090] [Second Modification] In the second embodiment described above, both glass-side convex portion 211 and chip-side convex portion 221 are formed, but it is also possible to form only one of them. Semiconductor package 200 in this second modification of the second embodiment differs from the first embodiment in that only glass-side convex portion 211 is formed.

[0091] 17 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a second modified example of the second embodiment of the present technology. In this second modified example of the second embodiment, a glass-side convex portion 211 is formed on the lower surface of the glass 210 so as to surround the side surface of the cavity. On the other hand, the upper surface of the sensor chip 220 is substantially flat.

[0092] The thickness of the glass-side convex portion 211 is adjusted to a value that prevents the lower surface of the glass 210 from contacting the upper end of the OCL 223. For example, the distance (i.e., the thickness) from Z1 of the inner region of the glass-side convex portion 211 to Z3 of the lower surface of the glass-side convex portion 211 is adjusted to 5 to 10 micrometers (μm).

[0093] By adjusting the thickness of the glass-side convex portion 211 to a value that does not contact the upper end of the OCL 223, the chip-side convex portion 221 becomes unnecessary, and the process of forming the convex portion becomes unnecessary.

[0094] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0095] As shown in the second modification of the first embodiment, a sawtooth anchor portion can be formed on the lower surface of the glass-side convex portion 211 .

[0096] Thus, according to the second variant of the second embodiment of the present technology, the glass side convex portion 211 is formed, and the glass 210 is placed so that the lower surface does not contact the OCL 223, thereby making the chip side convex portion 221 unnecessary.

[0097] [Third Modification] In the second embodiment described above, both the glass-side convex portion 211 and the chip-side convex portion 221 are formed, but an inorganic film can be formed instead. The semiconductor package 200 in this third modification of the second embodiment differs from the second embodiment in that an inorganic film is formed around the pixel array portion 222.

[0098] 18 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a third modified example of the second embodiment of the present technology. In the third modified example of the second embodiment, an area around the cavity on the lower surface of the glass 210 is covered with an inorganic film 254. Furthermore, the lower surface of the glass 210 is flat, and the upper surface of the sensor chip 220 is approximately flat.

[0099] The thickness of the inorganic film 254 is adjusted to a value that prevents the lower surface of the glass 210 from contacting the upper end of the OCL 223. For example, the distance (i.e., the thickness) from Z1 of the lower surface of the glass to Z3 of the lower surface of the inorganic film 254 is adjusted to 5 to 10 micrometers (μm).

[0100] By forming inorganic film 254 so as to surround the side surface of the cavity, glass-side convex portion 211 and chip-side convex portion 221 are no longer necessary, and processing of glass 210 and the like is no longer necessary.

[0101] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0102] As described above, according to the third modified example of the second embodiment of the present technology, the inorganic film 254 is formed to surround the side surface of the cavity, so that the glass-side convex portion 211 and the chip-side convex portion 221 are not necessary.

[0103] 3. Third Embodiment In the first modification of the first embodiment described above, the areas of both sides of the glass 210 are the same, but this configuration makes it difficult to remove the glass 210 after sealing. Also, there is a risk of flare occurring due to light reflected from the side surfaces of the glass 210. The semiconductor package 200 in this third embodiment differs from the first modification of the first embodiment in that the area of ​​the top surface of the glass 210 is made larger than the bottom surface.

[0104] 19 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a third embodiment of the present technology. The semiconductor package 200 according to the third embodiment differs from the first modification of the first embodiment in that the area of ​​the top surface of the glass 210 is larger than that of the bottom surface. As a result, the cross section of the glass 210 is tapered downward. By tapering the cross section of the glass 210, it becomes easier to remove the glass 210 after sealing. Furthermore, since light reflected by the side surface of the glass 210 is not incident on the pixel array section 222, flare due to the reflected light can be suppressed.

[0105] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0106] Furthermore, the second to fourth modifications of the first embodiment, the second embodiment, and the first to third modifications of the second embodiment can be applied to the third embodiment.

[0107] As described above, according to the third embodiment of the present technology, the area of ​​the upper surface of the glass 210 is made larger than that of the lower surface, which makes it easier to remove the glass 210 after sealing, and makes it possible to suppress flare.

[0108] 4. Fourth Embodiment In the second modification of the first embodiment described above, the chip-side convex portion 221 is formed on the upper surface of the sensor chip 220, but this configuration may not be able to sufficiently alleviate thermal stress. The semiconductor package 200 in this fourth embodiment differs from the second modification of the first embodiment in that resin is added to the outside of the chip-side convex portion 221.

[0109] 20 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a fourth embodiment of the present technology. In the fourth embodiment, a chip-side convex portion 221 is formed on the upper surface of a sensor chip 220. The chip-side convex portion 221 is formed inside the outer periphery of the glass 210. The glass 210 is placed on the chip-side convex portion 221 without resin therebetween.

[0110] In the figure, the Z coordinate of the plane on which the pixels are formed is Z3, and the Z coordinate of the top surface of the chip-side convex portion 221 is Z2. Furthermore, the X coordinate of the outer periphery of the chip-side convex portion 221 on the left side is X3, and the X coordinate of the inner periphery of the chip-side convex portion 221 is X4. In this case, the rectangular area surrounded by (X3, Z2), (X3, Z3), (X4, Z2), and (X4, Z3) corresponds to the chip-side convex portion 221 on the left end.

[0111] Furthermore, an outer resin 256 is formed on the outside of the chip-side convex portion 221. The outer resin 256 is made of the same resin as the sealing resin 240, or a resin that is softer (in other words, has a lower elastic modulus) than the sealing resin 240. The arrangement of this outer resin 256 can alleviate thermal stress when it occurs and suppress tilting of the glass 210.

[0112] In the figure, the sealing resin 240 is transfer molded as illustrated in the first modified example of the first embodiment, but the sealing resin 240 may be applied and cured as in the first embodiment.

[0113] As described above, according to the fourth embodiment of the present technology, the outer resin 256 is formed around the chip-side convex portion 221, so that thermal stress can be sufficiently alleviated.

[0114] 5. Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0115] FIG. 21 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0116] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 21 , the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0117] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0118] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0119] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0120] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0121] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0122] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0123] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0124] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0125] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 21, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0126] FIG. 22 is a diagram showing an example of the installation position of the imaging unit 12031.

[0127] In FIG. 22, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0128] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0129] 22 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0130] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0131] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0132] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0133] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0134] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the image capture unit 12031 among the above-described configurations. Specifically, the electronic device 100 in FIG. 1 can be applied to the image capture unit 12031. (For example, "the electronic device 100 in FIG. 1 can be applied to the image capture unit 12031.") By applying the technology according to the present disclosure to the image capture unit 12031, it is possible to obtain a captured image that is easier to see, thereby reducing driver fatigue.

[0135] Note that the above-described embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specifying the invention in the claims correspond to each other. Similarly, the matters specifying the invention in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment within the scope of the gist thereof.

[0136] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0137] The present technology may also be configured as follows. (1) A semiconductor package comprising: a semiconductor chip having a plurality of pixels arranged on a light-receiving surface; glass mounted on the semiconductor chip without an organic member; and a sealing resin sealing a cavity, which is a space between the semiconductor chip and the glass. (2) The semiconductor package according to (1), wherein each of the plurality of pixels includes an on-chip lens, and the on-chip lens is in contact with the glass. (3) The semiconductor package according to (2), wherein the semiconductor chip comprises a chip-side convex portion surrounding a side surface of the cavity. (4) The method for manufacturing the semiconductor package according to (3), wherein the glass comprises a saw-tooth anchor portion formed along the outer periphery of the glass. (5) The semiconductor package according to (2), wherein the glass comprises a glass-side convex portion surrounding a side surface of the cavity. (6) The semiconductor package according to (2), wherein the glass comprises a concave portion surrounding the periphery of the plurality of pixels. (7) The semiconductor package according to (1), wherein each of the plurality of pixels includes an on-chip lens, and the on-chip lens is not in contact with the glass. (8) The semiconductor package according to (7), wherein the glass includes a glass-side convex portion surrounding a side surface of the cavity, and the semiconductor chip includes a chip-side convex portion surrounding the side surface of the cavity. (9) The semiconductor package according to (7), wherein the semiconductor chip includes a chip-side convex portion surrounding the side surface of the cavity. (10) The semiconductor package according to (7), wherein the glass includes a glass-side convex portion surrounding the side surface of the cavity. (11) The semiconductor package according to (7), further including an inorganic film surrounding the side surface of the cavity. (12) The semiconductor package according to any one of (1) to (11), wherein one of both surfaces of the glass faces the light-receiving surface, and the other of both surfaces of the glass has a larger area than the one surface. (13) The semiconductor package according to (1), further comprising an outer resin, wherein the semiconductor chip has a chip-side convex portion surrounding a side surface of the cavity, and the outer resin is formed around the chip-side convex portion.(14) A method for manufacturing a semiconductor package, comprising: a mounting step of mounting a semiconductor chip having a plurality of pixels arranged on a light-receiving surface on a semiconductor substrate; a mounting step of mounting glass on the semiconductor chip without an organic member therebetween; and a sealing step of sealing a cavity, which is a space between the semiconductor chip and the glass, with a sealing resin. (15) The method for manufacturing a semiconductor package according to (14), wherein the sealing step involves applying and hardening the sealing resin in a liquid state. (16) The method for manufacturing a semiconductor package according to (14), wherein the sealing step involves transfer molding the sealing resin.

[0138] 100 Electronic device 110 Optical section 120 Solid-state imaging element 130 DSP circuit 140 Display section 150 Operation section 160 Bus 170 Frame memory 180 Storage section 190 Power supply section 200 Semiconductor package 210 Glass 211 Glass-side convex section 212 Anchor section 220 Sensor chip 221 Chip-side convex section 222 Pixel array section 223 OCL 224 Concave section 230 Semiconductor substrate 240 Sealing resin 251 Wire 252 Die bond material 253 External terminal 254 Inorganic film 255 Rib resin 256 Outer resin 301, 302 Glass mounting collet 12031 Imaging section

Claims

1. A semiconductor package comprising: a semiconductor chip having a plurality of pixels arranged on its light-receiving surface; glass placed on the semiconductor chip without an organic material; and a sealing resin that seals a cavity that is the space between the semiconductor chip and the glass.

2. The semiconductor package according to claim 1, wherein each of the plurality of pixels includes an on-chip lens, the on-chip lens being in contact with the glass.

3. The semiconductor package according to claim 2, wherein the semiconductor chip has a chip-side protrusion surrounding a side surface of the cavity.

4. The method for manufacturing a semiconductor package according to claim 3, wherein the glass has a sawtooth-shaped anchor portion formed along the outer periphery of the glass.

5. The semiconductor package according to claim 2, wherein the glass has a glass-side convex portion surrounding a side surface of the cavity.

6. The semiconductor package according to claim 2, wherein the glass has a recess surrounding the periphery of the plurality of pixels.

7. The semiconductor package according to claim 1, wherein each of the plurality of pixels includes an on-chip lens, and the on-chip lens is not in contact with the glass.

8. The semiconductor package according to claim 7, wherein the glass has a glass-side convex portion surrounding a side surface of the cavity, and the semiconductor chip has a chip-side convex portion surrounding a side surface of the cavity.

9. The semiconductor package according to claim 7, wherein the semiconductor chip has a chip-side protrusion surrounding a side surface of the cavity.

10. The semiconductor package according to claim 7, wherein the glass has a glass-side convex portion surrounding a side surface of the cavity.

11. The semiconductor package according to claim 7, further comprising an inorganic film surrounding the side surface of the cavity.

12. The semiconductor package according to claim 1, wherein one of the two surfaces of the glass faces the light receiving surface, and the other of the two surfaces of the glass has a larger area than the one surface.

13. The semiconductor package according to claim 1, further comprising an outer resin, the semiconductor chip having a chip-side convex portion surrounding a side surface of the cavity, the glass being placed on the chip-side convex portion, and the outer resin being formed around the chip-side convex portion.

14. A method for manufacturing a semiconductor package comprising: a mounting step of mounting a semiconductor chip having a plurality of pixels arranged on its light-receiving surface on a semiconductor substrate; a placement step of placing glass on the semiconductor chip without an organic material therebetween; and a sealing step of sealing a cavity, which is the space between the semiconductor chip and the glass, with a sealing resin.

15. The method for manufacturing a semiconductor package according to claim 14, wherein the sealing resin is applied in a liquid state and then cured in the sealing step.

16. The method for manufacturing a semiconductor package according to claim 14, wherein the sealing resin is transfer molded in the sealing step.

Images