Semiconductor device

Abstract

A semiconductor device according to the present invention comprises a first die pad, a first semiconductor element, a first lead, a first conductive member, and a sealing resin. The first conductive member is conductively joined to the first semiconductor element and the first lead. The first die pad, the first semiconductor element, and the first conductive member are covered with the sealing resin. The first lead protrudes from the first side surface of the sealing resin. A first distance D1, a second distance D2, and a third distance D3 satisfy a relationship D1>D2≥D3. In a first direction z, the first conductive member 41 is positioned between a first mounting surface 21A of the first die pad 21 and the top surface 51 of the sealing resin 50.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] The semiconductor device disclosed in Patent Document 1 includes two die pads, a control element (controller) and a drive element (gate driver) mounted individually on the two die pads, and a sealing resin that covers the two die pads, the control element, and the drive element. The semiconductor device drives a switching element such as an IGBT or a MOSFET. The semiconductor device is used in an inverter circuit or the like.

[0003] In this semiconductor device, the power supply voltage supplied to the drive element is equal to or greater than the voltage applied to the switching element, and therefore the power supply voltage supplied to the control element is different from the power supply voltage supplied to the drive element. This results in a difference between the voltage applied to the control element and its conduction path and the voltage applied to the drive element and its conduction path. Therefore, in this semiconductor device, an insulating element is interposed in the transmission path of the electrical signal between the control element and the drive element, thereby isolating the control element and its conduction path from the drive element and its conduction path. This prevents dielectric breakdown of the control element and the drive element.

[0004] The semiconductor device further includes a wire conductively bonded to either the control element or the drive element and the terminal. If the size of the semiconductor device is reduced, or if the size of the control element and the drive element is increased without changing the size of the semiconductor device, the area of ​​the sealing resin covering the wire will be reduced. If the area of ​​the sealing resin is reduced, there is a concern that the dielectric strength of the semiconductor device will be reduced.

[0005] Japanese Patent Application Laid-Open No. 2016-207714

[0006] Summary: An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can suppress a decrease in the dielectric strength voltage of the device without increasing the size of the device.

[0007] A semiconductor device provided by a first aspect of the present disclosure includes a first die pad having a first mounting surface and a first back surface facing opposite each other in a first direction, a first semiconductor element mounted on the first mounting surface, a first lead spaced from the first die pad, a first conductive member conductively joined to the first semiconductor element and the first lead, and a sealing resin covering the first die pad, the first semiconductor element, and the first conductive member. The first semiconductor element has a first element surface facing the same side as the first mounting surface in the first direction. The sealing resin has a top surface facing the same side as the first mounting surface in the first direction, a bottom surface facing the opposite side from the top surface in the first direction, and a first side surface facing one side in a second direction perpendicular to the first direction. The first lead protrudes from the first side surface. When a first distance between the first mounting surface and the top surface in the first direction is D1, a second distance between the first back surface and the bottom surface in the first direction is D2, and a third distance between the first element surface and the top surface in the first direction is D3, the relationship D1 > D2 ≧ D3 is satisfied. In the first direction, the first conductive member is located between the first mounting surface and the top surface.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing a perspective view of the sealing resin. FIG. 3 is a front view of the semiconductor device shown in FIG. 1. FIG. 4 is a rear view of the semiconductor device shown in FIG. 1. FIG. 5 is a left side view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 2. FIG. 10 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, showing a perspective view of the sealing resin. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a plan view of a semiconductor device according to a third embodiment of the present disclosure. FIG. 13 is a plan view corresponding to FIG. 12 , showing a perspective view of the sealing resin. FIG. 14 is a front view of the semiconductor device shown in FIG. 12. Fig. 15 is a left side view of the semiconductor device shown in Fig. 12. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 13.

[0010] DETAILED DESCRIPTION: The details of the present disclosure will be described with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 9 . The semiconductor device A10 includes a first semiconductor element 11, a second semiconductor element 12, an insulating element 13, a first die pad 21, a second die pad 22, a plurality of first leads 31, a plurality of second leads 32, and a sealing resin 50. The semiconductor device A10 further includes a third lead 33, a fourth lead 34, a fifth lead 35, a sixth lead 36, two seventh leads 37, a plurality of first conductive members 41, a plurality of second conductive members 42, a plurality of third conductive members 43, and a plurality of fourth conductive members 44. The semiconductor device A10 is surface-mounted on a wiring board of an inverter device, for example, in an electric vehicle or hybrid vehicle. The package format of the semiconductor device A10 is a small outline package (SOP). However, the package format of the semiconductor device A10 is not limited to SOP. For ease of understanding, FIG. 2 shows the sealing resin 50 in a see-through manner. In FIG. 2, the outer shape of the sealing resin 50 is shown by an imaginary line (two-dot chain line).

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to the first mounting surface 21A of the first die pad 21 (described later) will be referred to as the "first direction z." A direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0013] In semiconductor device A10, first semiconductor element 11, second semiconductor element 12, and insulating element 13 are each composed of individual elements. Second semiconductor element 12 is located on the opposite side of first semiconductor element 11 in second direction x with insulating element 13 as the reference. Insulating element 13 is located adjacent to first semiconductor element 11 in third direction y. When viewed in first direction z (in a plan view), first semiconductor element 11, second semiconductor element 12, and insulating element 13 each have a rectangular shape with the longer side extending in third direction y.

[0014] The first semiconductor element 11 controls the second semiconductor element 12. The first semiconductor element 11 includes a circuit that converts an electrical signal input from another semiconductor device into a PWM control signal, a transmitting circuit that transmits the PWM control signal to the second semiconductor element 12, and a receiving circuit that receives the electrical signal from the second semiconductor element 12.

[0015] The second semiconductor element 12 drives a switching element located outside the semiconductor device A10. The switching element is, for example, an insulated gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET). The second semiconductor element 12 includes a receiving circuit that receives a PWM control signal, a circuit that drives the switching element based on the PWM control signal, and a transmitting circuit that transmits an electrical signal to the first semiconductor element 11. An example of the electrical signal is an output signal from a temperature sensor located near the motor.

[0016] The insulating element 13 transmits electrical signals, such as PWM (Pulse Width Modulation) control signals, in an isolated state. The insulating element 13 is an inductor-coupled type. An example of an inductor-coupled type insulating element 13 is an insulating transformer. An insulating transformer transmits electrical signals in an isolated state by inductively coupling two inductors (coils). The two inductors include a transmitting inductor and a receiving inductor. Each of the two inductors is stacked in the first direction z. A dielectric layer made of silicon dioxide (SiO2) or the like is located between the transmitting inductor and the receiving inductor. The dielectric layer electrically insulates the transmitting inductor and the receiving inductor. Alternatively, the insulating element 13 may be a capacitive type. An example of a capacitive type insulating element 13 is a capacitor.

[0017] The voltages applied to the first semiconductor element 11 and the second semiconductor element 12 are different from each other. As a result, a potential difference occurs between the first semiconductor element 11 and the second semiconductor element 12. In the semiconductor device A10, the voltage applied to the second semiconductor element 12 is higher than the voltage applied to the first semiconductor element 11. Additionally, in the semiconductor device A10, the power supply voltage supplied to the second semiconductor element 12 is higher than the power supply voltage supplied to the first semiconductor element 11.

[0018] In the semiconductor device A10, a first circuit including a first semiconductor element 11 and a second circuit including a second semiconductor element 12 are insulated from each other by an insulating element 13. The insulating element 13 is electrically connected to the first circuit and the second circuit. The first circuit includes the first semiconductor element 11 as well as a plurality of first leads 31, a third lead 33, and a fifth lead 35. The second circuit includes the second die pad 22 as well as a plurality of second leads 32, a fourth lead 34, and a sixth lead 36. The first circuit and the second circuit have relatively different potentials. In the semiconductor device A10, the potential of the first circuit is higher than the potential of the second circuit. The insulating element 13 relays mutual signals between the first circuit and the second circuit. For example, in an inverter device for an electric vehicle or a hybrid vehicle, the voltage applied to the ground (GND) of the first semiconductor element 11 is about 0 V, while the voltage applied to the ground of the second semiconductor element 12 may transiently become 600 V or more.

[0019] As shown in Fig. 7 , the first semiconductor element 11 has a first element surface 11A that faces the same side in the first direction z as a first mounting surface 21A of a first die pad 21, which will be described later. As shown in Figs. 2 and 7 , the first semiconductor element 11 has a plurality of first electrodes 111. The plurality of first electrodes 111 are provided on the first element surface 11A. The plurality of first electrodes 111 include, for example, aluminum (Al). The plurality of first electrodes 111 are electrically connected to a circuit configured in the first semiconductor element 11.

[0020] As shown in Fig. 7 , the second semiconductor element 12 has a second element surface 12A that faces the same side in the first direction z as a second mounting surface 22A of a second die pad 22, which will be described later. As shown in Figs. 2 , 7 and 9 , the second semiconductor element 12 has a plurality of second electrodes 121. The second electrodes 121 are provided on the second element surface 12A. The second electrodes 121 include, for example, aluminum. The second electrodes 121 are electrically connected to a circuit configured in the second semiconductor element 12.

[0021] As shown in FIGS. 2 and 7 , the insulating element 13 is located between the second semiconductor element 12 and the first semiconductor element 11 in the second direction x. In other words, the first semiconductor element 11 is located on the opposite side of the insulating element 13 from the second semiconductor element 12 in the second direction x. A plurality of third electrodes 131 and a plurality of fourth electrodes 132 are provided on one side of the insulating element 13 in the first direction z (the side toward which the first element surface 11A of the first semiconductor element 11 faces in the first direction z). Each of the third electrodes 131 and each of the fourth electrodes 132 is electrically connected to a transmitting inductor or a receiving inductor, respectively. The third electrodes 131 are arranged along the third direction y and are located between the first semiconductor element 11 and the second semiconductor element 12 in the second direction x. The fourth electrodes 132 are arranged along the third direction y and are located on the opposite side of the first semiconductor element 11 in the second direction x from the third electrodes 131. The plurality of third electrodes 131 and the plurality of fourth electrodes 132 include, for example, aluminum.

[0022] As shown in Fig. 1 , the sealing resin 50 covers the first semiconductor element 11, the second semiconductor element 12, the insulating element 13, the first die pad 21, and the second die pad 22. As shown in Fig. 7 , the sealing resin 50 further covers a plurality of first conductive members 41, a plurality of second conductive members 42, a plurality of third conductive members 43, and a plurality of fourth conductive members 44. The sealing resin 50 is an insulator. The sealing resin 50 is made of a material containing, for example, epoxy resin. When viewed in the first direction z, the sealing resin 50 has a rectangular shape.

[0023] As shown in FIGS. 3 to 6, the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 55.

[0024] 3 to 6, the top surface 51 and the bottom surface 52 face in opposite directions in the first direction z. The top surface 51 faces the same side in the first direction z as a first mounting surface 21A of the first die pad 21, which will be described later.

[0025] As shown in FIGS. 3 and 4 , the first side surface 53 is connected to the top surface 51 and the bottom surface 52 and faces one side in the second direction x. The first side surface 53 is located closer to the first die pad 21 than the second side surface 54. The first side surface 53 includes a first region 531, a second region 532, and a third region 533. The first region 531 includes the first direction z as an in-plane direction. As viewed in the first direction z, the first region 531 is located outward from each of the top surface 51 and the bottom surface 52. The second region 532 is located between the first region 531 and the top surface 51 in the first direction z. The third region 533 is located on the opposite side of the first region 531 from the second region 532. The second region 532 and the third region 533 are each inclined with respect to the first region 531. The inclination angle α1 of the second region 532 with respect to the first region 531 is larger than the inclination angle β1 of the third region 533 with respect to the first region 531 .

[0026] As shown in FIGS. 3 and 4 , the second side surface 54 is connected to the top surface 51 and the bottom surface 52 and faces the opposite side from the first side surface 53 in the second direction x. The second side surface 54 is located closer to the second die pad 22 than the first side surface 53. The second side surface 54 includes a fourth region 541, a fifth region 542, and a sixth region 543. The fourth region 541 includes the first direction z as an in-plane direction. As viewed in the first direction z, the fourth region 541 is located outward from each of the top surface 51 and the bottom surface 52. The fifth region 542 is located between the fourth region 541 and the top surface 51 in the first direction z. The sixth region 543 is located on the opposite side from the fifth region 542 with respect to the fourth region 541. The fifth region 542 and the sixth region 543 are each inclined with respect to the fourth region 541. The inclination angle α2 of the fifth region 542 with respect to the fourth region 541 is larger than the inclination angle β2 of the sixth region 543 with respect to the fourth region 541 .

[0027] As shown in FIGS. 5 and 6 , each of the two third side surfaces 55 is connected to the top surface 51 and the bottom surface 52 and faces opposite each other in the third direction y. Each of the two third side surfaces 55 includes a seventh region 551, an eighth region 552, and a ninth region 553. The seventh region 551 includes the first direction z as an in-plane direction. When viewed in the first direction z, the seventh region 551 is located outward from each of the top surface 51 and the bottom surface 52. The eighth region 552 is located between the seventh region 551 and the top surface 51 in the first direction z. The ninth region 553 is located on the opposite side of the eighth region 552 from the seventh region 551. The eighth region 552 and the ninth region 553 are each inclined with respect to the seventh region 551. The inclination angle α3 of the eighth region 552 with respect to the seventh region 551 is larger than the inclination angle β3 of the ninth region 553 with respect to the seventh region 551 .

[0028] The first die pad 21, the second die pad 22, the plurality of first leads 31, the plurality of second leads 32, the third lead 33, the fourth lead 34, the fifth lead 35, the sixth lead 36, and the two seventh leads 37 all contain copper (Cu). The first die pad 21, the second die pad 22, and these leads are obtained from the same lead frame.

[0029] 1 and 2 , the first die pad 21 and the second die pad 22 are spaced apart from each other in the second direction x. In the semiconductor device A10, the first semiconductor element 11 and the insulating element 13 are mounted on the first die pad 21, and the second semiconductor element 12 is mounted on the second die pad 22. In this case, the area of ​​the first die pad 21 is larger than the area of ​​the second die pad 22 as viewed in the first direction z. Unlike the illustrated example, the first semiconductor element 11 may be mounted on the first die pad 21, and the second semiconductor element 12 and the insulating element 13 may be mounted on the second die pad 22.

[0030] 7 and 8 , the first die pad 21 has a first mounting surface 21A and a first back surface 21B that face opposite each other in the first direction z. The first mounting surface 21A faces the same side as the top surface 51 of the sealing resin 50 in the first direction z. The first semiconductor element 11 and the insulating element 13 are each bonded to the first mounting surface 21A via a bonding layer 29. The bonding layer 29 is made of a paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, the bonding layer 29 is a conductor. Alternatively, the bonding layer 29 may be solder.

[0031] 7 , the distance in the first direction z between the first mounting surface 21A of the first die pad 21 and the top surface 51 of the sealing resin 50 is defined as a first distance D1. The distance in the first direction z between the first back surface 21B of the first die pad 21 and the bottom surface 52 of the sealing resin 50 is defined as a second distance D2. The distance in the first direction z between the first element surface 11A of the first semiconductor element 11 and the top surface 51 is defined as a third distance D3. In this case, the relationship D1 > D2 ≧ D3 is satisfied.

[0032] As shown in FIGS. 2 , 7 , and 8 , the first die pad 21 has two first holes 211, a plurality of second holes 212, and two third holes 213. The two first holes 211, the plurality of second holes 212, and the two third holes 213 each penetrate the first die pad 21 in the first direction z. The two first holes 211 are located on both sides of the first semiconductor element 11 in the third direction y. Each of the two first holes 211 extends in the second direction x. The plurality of second holes 212 are located between the first semiconductor element 11 and the insulating element 13 in the second direction x. Each of the plurality of second holes 212 extends in the third direction y. The plurality of second holes 212 are arranged along the third direction y. The two third holes 213 are located on both sides of the insulating element 13 in the third direction y. Each of the two third holes 213 extends in the second direction x.

[0033] 7 and 9 , the second die pad 22 has a second mounting surface 22A and a second back surface 22B that face opposite each other in the first direction z. The second mounting surface 22A faces the same side in the first direction z as the first mounting surface 21A of the first die pad 21. The second semiconductor element 12 is bonded to the second mounting surface 22A via a bonding layer 29.

[0034] 7 , the distance in the first direction z between the second mounting surface 22A of the second die pad 22 and the top surface 51 of the sealing resin 50 is defined as a fourth distance D4. The distance in the first direction z between the second back surface 22B of the second die pad 22 and the bottom surface 52 of the sealing resin 50 is defined as a fifth distance D5. The distance in the first direction z between the second element surface 12A of the second semiconductor element 12 and the top surface 51 is defined as a sixth distance D6. In this case, the relationship D4 > D5 ≥ D6 is satisfied.

[0035] 1 and 2 , the multiple first leads 31 are located between the third lead 33 and the fifth lead 35 in the third direction y. The multiple first leads 31 are located on the opposite side of the first die pad 21 from the second die pad 22 in the second direction x. The multiple first leads 31 are arranged along the third direction y. At least one of the multiple first leads 31 is electrically connected to the first semiconductor element 11.

[0036] As shown in FIGS. 2 and 7 , each of the multiple first leads 31 has a first inner portion 311 and a first outer portion 312. The first inner portion 311 is covered with the sealing resin 50. As shown in FIG. 7 , the first inner portion 311 has a first connection surface 311A. The first connection surface 311A ​​faces the same side as the first mounting surface 21A of the first die pad 21 in the first direction z. The first connection surface 311A ​​and the first mounting surface 21A are included in the same plane. The first outer portion 312 is connected to the first inner portion 311. The first outer portion 312 protrudes from a first region 531 of the first side surface 53 of the sealing resin 50. When viewed in the first direction z, the first outer portion 312 extends in the second direction x. When viewed in the third direction y, the first outer portion 312 is bent in a gull-wing shape. The shape of the first outer part 312 is the same as the shape of a third outer part 332 (see FIG. 4) of the third lead 33, which will be described later. The surface of the first outer part 312 is plated with, for example, tin.

[0037] 7 , the first outer part 312 has a first mounting surface 312A. The first mounting surface 312A faces the opposite side of the first connecting surface 311A ​​of the first inner part 311 in the first direction z. The first mounting surface 312A is located farthest from the first connecting surface 311A ​​in the first direction z. The first mounting surface 312A protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The first mounting surface 312A is inclined with respect to the bottom surface 52.

[0038] As shown in FIGS. 1 and 2 , the third lead 33 includes a portion extending toward the first die pad 21 and is located closest to one of the two third side surfaces 55 of the sealing resin 50. The third lead 33 is connected to one side of the first die pad 21 in the third direction y. The third lead 33 is spaced apart from each of the two third side surfaces 55. The third lead 33 has a third inner portion 331 and a third outer portion 332. The third inner portion 331 is connected to the first die pad 21 and is covered with the sealing resin 50. The third outer portion 332 is connected to the third inner portion 331. The third outer portion 332 protrudes from a first region 531 of the first side surface 53 of the sealing resin 50. When viewed in the first direction z, the third outer portion 332 extends in the second direction x. 4, the third outer portion 332 is bent in a gull-wing shape when viewed in the third direction y. The surface of the third outer portion 332 is plated with, for example, tin.

[0039] As shown in FIGS. 1 and 2 , the fifth lead 35 includes a portion extending toward the first die pad 21 and is located closest to one of the two third side surfaces 55 of the sealing resin 50. The fifth lead 35 is connected to the side of the first die pad 21 opposite to the side on which the third lead 33 is located in the third direction y. The fifth lead 35 is spaced apart from each of the two third side surfaces 55. The fifth lead 35 has a fifth inner portion 351 and a fifth outer portion 352. The fifth inner portion 351 is connected to the first die pad 21 and is covered with the sealing resin 50. The fifth outer portion 352 is connected to the fifth inner portion 351. The fifth inner portion 351 protrudes from a first region 531 of the first side surface 53 of the sealing resin 50. When viewed in the first direction z, the fifth outer portion 352 extends in the second direction x. 3, the fifth outer part 352 is bent in a gull-wing shape when viewed in the third direction y. The surface of the fifth outer part 352 is plated with, for example, tin.

[0040] As shown in FIG. 8 , when viewed in the third direction y, the third inner portion 331 of the third lead 33 and the fifth inner portion 351 of the fifth lead 35 each overlap the first die pad 21 .

[0041] 1 and 2 , the multiple second leads 32 are located between the fourth lead 34 and the sixth lead 36 in the third direction y. The multiple second leads 32 are located on the opposite side of the second die pad 22 from the first die pad 21 in the second direction x. The multiple second leads 32 are arranged along the third direction y. At least one of the multiple second leads 32 is electrically connected to the second semiconductor element 12.

[0042] As shown in FIGS. 2 and 7 , each of the multiple second leads 32 has a second inner portion 321 and a second outer portion 322. The second inner portion 321 is covered with the sealing resin 50. As shown in FIG. 7 , the second inner portion 321 has a second connection surface 321A. The second connection surface 321A faces the same side as the second mounting surface 22A of the second die pad 22 in the first direction z. The second connection surface 321A and the second mounting surface 22A are included in the same plane. The second outer portion 322 is connected to the second inner portion 321. The second outer portion 322 protrudes from a fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the second outer portion 322 extends in the second direction x. When viewed in the third direction y, the second outer portion 322 is bent in a gull-wing shape. The shape of the second outer part 322 is equal to the shape of a seventh outer part 372 (see FIGS. 3 and 4) of each of two seventh leads 37, which will be described later. The surface of the second outer part 322 is plated with, for example, tin.

[0043] 7 , the second outer part 322 has a second mounting surface 322A. The second mounting surface 322A faces the opposite side from the second connecting surface 321A of the second inner part 321 in the first direction z. The second mounting surface 322A is located farthest from the second connecting surface 321A in the first direction z. The second mounting surface 322A protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The second mounting surface 322A is inclined with respect to the bottom surface 52.

[0044] As shown in FIGS. 1 and 2 , the fourth lead 34 includes a portion extending toward the second die pad 22 and is located closest to one of the two third side surfaces 55 of the sealing resin 50. The fourth lead 34 is connected to one side of the second die pad 22 in the third direction y. The fourth lead 34 is spaced apart from each of the two third side surfaces 55. The fourth lead 34 has a fourth inner portion 341 and a fourth outer portion 342. The fourth inner portion 341 is connected to the second die pad 22 and is covered with the sealing resin 50. The fourth outer portion 342 is connected to the fourth inner portion 341. The fourth outer portion 342 protrudes from a fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the fourth outer portion 342 extends in the second direction x. When viewed in the third direction y, the fourth outer portion 342 is bent in a gull-wing shape. The shape of the fourth outer part 342 is equal to the shape of a seventh outer part 372 (see FIGS. 3 and 4) of each of two seventh leads 37, which will be described later. The surface of the fourth outer part 342 is plated with, for example, tin.

[0045] As shown in FIGS. 1 and 2 , the sixth lead 36 includes a portion extending toward the second die pad 22 and is located closest to one of the two third side surfaces 55 of the sealing resin 50. The sixth lead 36 is connected to the side of the second die pad 22 opposite the side on which the fourth lead 34 is located in the third direction y. The sixth lead 36 is spaced apart from each of the two third side surfaces 55. The sixth lead 36 has a sixth inner portion 361 and a sixth outer portion 362. The sixth inner portion 361 is connected to the second die pad 22 and is covered with the sealing resin 50. The sixth outer portion 362 is connected to the sixth inner portion 361. The sixth outer portion 362 protrudes from the fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the sixth outer portion 362 extends in the second direction x. The sixth outer part 362 is bent in a gull-wing shape when viewed in the third direction y. The shape of the sixth outer part 362 is equal to the shape of each of seventh outer parts 372 (see FIGS. 3 and 4 ) of two seventh leads 37 described later.

[0046] As shown in FIG. 9 , when viewed in the third direction y, the fourth inner portion 341 of the fourth lead 34 and the sixth inner portion 361 of the sixth lead 36 each overlap the second die pad 22 .

[0047] As shown in FIGS. 1 and 2 , each of the two seventh leads 37 includes a portion extending toward either the first die pad 21 or the second die pad 22, and is located closest to either of the two third side surfaces 55 of the sealing resin 50. The two seventh leads 37 are spaced apart from each other in the third direction y. In the semiconductor device A10, a plurality of second leads 32, fourth leads 34, and sixth leads 36 are located between the two seventh leads 37. Each of the two seventh leads 37 is spaced apart from each of the first die pad 21, the second die pad 22, and the two third side surfaces 55. Each of the two seventh leads 37 has a seventh inner portion 371 and a seventh outer portion 372. The seventh inner portion 371 is covered with the sealing resin 50. The seventh outer portion 372 is connected to the seventh inner portion 371. The seventh outer part 372 protrudes from the fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the seventh outer part 372 extends in the second direction x. As shown in Figures 3 and 4, the seventh outer part 372 is bent in a gull-wing shape when viewed in the third direction y. The surface of the seventh outer part 372 is plated with, for example, tin.

[0048] As shown in FIGS. 2 and 7 , each of the multiple first conductive members 41 is conductively joined to one of the multiple first electrodes 111 of the first semiconductor element 11 and the first connection surface 311A ​​of the first inner portion 311 of one of the multiple first leads 31. As a result, at least one of the multiple first leads 31 is electrically connected to the first semiconductor element 11. At least one of the multiple first conductive members 41 is conductively joined to one of the multiple first electrodes 111 and the third inner portion 331 of the third lead 33. As a result, the third lead 33 is electrically connected to the first semiconductor element 11. Furthermore, at least one of the multiple first conductive members 41 is conductively joined to one of the multiple first electrodes 111 and the fifth inner portion 351 of the fifth lead 35. As a result, the fifth lead 35 is electrically connected to the first semiconductor element 11. At least one of the third lead 33 and the fifth lead 35 serves as the ground for the first semiconductor element 11 .

[0049] 7 , in the first direction z, the multiple first conductive members 41 are located between the first mounting surface 21A of the first die pad 21 and the top surface 51 of the sealing resin 50. The multiple first conductive members 41 are wires. In the first direction z, the multiple first conductive members 41 contain, for example, gold. Alternatively, each of the multiple first conductive members 41 may include a core material containing copper and a coating material containing palladium and covering the core material.

[0050] As shown in FIGS. 2 and 7 , each of the multiple second conductive members 42 is conductively joined to one of the multiple second electrodes 121 of the second semiconductor element 12 and the second connection surface 321A of the second inner portion 321 of one of the multiple second leads 32. As a result, at least one of the multiple second leads 32 is electrically connected to the second semiconductor element 12. At least one of the multiple second conductive members 42 is conductively joined to one of the multiple second electrodes 121 and the fourth inner portion 341 of the fourth lead 34. As a result, the fourth lead 34 is electrically connected to the second semiconductor element 12. At least one of the multiple second conductive members 42 is conductively joined to one of the multiple second electrodes 121 and the sixth inner portion 361 of the sixth lead 36. As a result, the sixth lead 36 is electrically connected to the second semiconductor element 12. At least one of the fourth lead 34 and the sixth lead 36 forms the ground of the second semiconductor element 12. At least one of the plurality of second conductive members 42 is conductively joined to one of the plurality of second electrodes 121 and to the seventh inner portion 371 of one of the two seventh leads 37. As a result, one of the two seventh leads 37 is electrically connected to the second semiconductor element 12.

[0051] 7 , the multiple second conductive members 42 are located between the second mounting surface 22A of the second die pad 22 and the top surface 51 of the sealing resin 50 in the first direction z. The multiple second conductive members 42 are wires. The multiple second conductive members 42 contain, for example, gold. Alternatively, each of the multiple second conductive members 42 may include a core material containing copper and a coating material containing palladium and covering the core material.

[0052] 2 and 7 , each of the multiple third conductive members 43 is conductively bonded to one of the multiple third electrodes 131 of the insulating element 13 and one of the multiple first electrodes 111 of the first semiconductor element 11. This allows the first semiconductor element 11 to be electrically connected to the insulating element 13. The multiple third conductive members 43 are arranged along the third direction y. Any of the multiple third conductive members 43 straddles any of the multiple second holes 212 provided in the first die pad 21.

[0053] 2 and 7 , each of the multiple fourth conductive members 44 is conductively bonded to one of the multiple fourth electrodes 132 of the insulating element 13 and one of the multiple second electrodes 121 of the second semiconductor element 12. This allows the second semiconductor element 12 to be electrically connected to the insulating element 13. The multiple fourth conductive members 44 are arranged along the third direction y. The multiple fourth conductive members 44 straddle the first die pad 21 and the second die pad 22.

[0054] 7 , in the first direction z, each of the plurality of third conductive members 43 and the plurality of fourth conductive members 44 is located between either the first mounting surface 21A of the first die pad 21 or the second mounting surface 22A of the second die pad 22 and the top surface 51 of the sealing resin 50. The plurality of third conductive members 43 and the plurality of fourth conductive members 44 are wires. The plurality of third conductive members 43 and the plurality of fourth conductive members 44 include, for example, gold.

[0055] As shown in Figure 7, in the first direction z, the distance L1 from the top surface 51 of the sealing resin 50 to any one of the multiple fourth conductive members 44 is shorter than the distance L2 from the top surface 51 to any one of the multiple third conductive members 43.

[0056] A motor driver circuit in an inverter device typically includes a half-bridge circuit including a low-side (low potential side) switching element and a high-side (high potential side) switching element. The following description focuses on the case where these switching elements are MOSFETs. Here, for the low-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both ground. For the high-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both equivalent to the potential at the output node of the half-bridge circuit. The potential at the output node changes depending on the driving of the high-side and low-side switching elements, so the reference potential of the gate driver driving the high-side switching element also changes. When the high-side switching element is on, the reference potential is equivalent to the voltage applied to the drain of the high-side switching element (e.g., 600 V or higher). In the semiconductor device A10, the ground of the first semiconductor element 11 and the ground of the second semiconductor element 12 are separated. Therefore, when the semiconductor device A10 is used as a gate driver for driving a high-side switching element, a voltage equivalent to the voltage applied to the drain of the high-side switching element is transiently applied to the ground of the second semiconductor element 12.

[0057] Next, the effects of the semiconductor device A10 will be described.

[0058] The semiconductor device A10 includes a first die pad 21, a first semiconductor element 11, a first lead 31, a first conductive member 41, and a sealing resin 50. The first lead 31 protrudes from a first side surface 53 of the sealing resin 50. A first distance D1 is defined as the distance in the first direction z between a first mounting surface 21A of the first die pad 21 and a top surface 51 of the sealing resin 50. A second distance D2 is defined as the distance in the first direction z between a first back surface 21B of the first die pad 21 and a bottom surface 52 of the sealing resin 50. A third distance D3 is defined as the distance in the first direction z between a first element surface 11A of the first semiconductor element 11 and the top surface 51. These distances satisfy the relationship D1 > D2 ≥ D3. Furthermore, the first conductive member 41 is located between the first mounting surface 21A and the top surface 51 in the first direction z. This configuration allows the sealing resin 50 to cover the first conductive member 41 more extensively without increasing the size of the sealing resin 50. Therefore, according to this configuration, in the semiconductor device A10, it is possible to suppress a decrease in the dielectric strength voltage of the semiconductor device A10 without increasing the size of the semiconductor device A10.

[0059] The first side surface 53 of the sealing resin 50 includes a first region 531, a second region 532, and a third region 533. The second region 532 and the third region 533 are each inclined with respect to the first region 531. The first lead 31 protrudes from the first region 531. The inclination angle α1 of the second region 532 with respect to the first region 531 is larger than the inclination angle β1 of the third region 533 with respect to the first region 531. With this configuration, when forming the portion of the sealing resin 50 located between the top surface 51 and the first mounting surface 21A of the first die pad 21 in the first direction z, it is possible to suppress the occurrence of damage to that portion due to the removal of the molding die.

[0060] The semiconductor device A10 further includes a second die pad 22, a second semiconductor element 12, a second lead 32, and a second conductive member 42. The second lead 32 protrudes from a second side surface 54 of the sealing resin 50. The distance in the first direction z between the second mounting surface 22A of the second die pad 22 and the top surface 51 of the sealing resin 50 is defined as a fourth distance D4. The distance in the first direction z between the second back surface 22B of the second die pad 22 and the bottom surface 52 of the sealing resin 50 is defined as a fifth distance D5. The distance in the first direction z between the second element surface 12A of the second semiconductor element 12 and the top surface 51 is defined as a sixth distance D6. These distances satisfy the relationship D4 > D5 ≥ D6. Furthermore, in the first direction z, the second conductive member 42 is located between the second mounting surface 22A and the top surface 51. This configuration allows the sealing resin 50 to cover the second conductive member 42 more effectively without increasing the size of the sealing resin 50. This effectively prevents the breakdown voltage of the semiconductor device A10 from decreasing.

[0061] As viewed in the third direction y, the third lead 33 and the fifth lead 35 each overlap the first die pad 21. This configuration makes the flow rate of the molten resin that flows in the cavity of the molding die on both sides in the first direction z with the first die pad 21 as the reference more uniform. As a result, as viewed in the first direction z, the portion of the sealing resin 50 that overlaps the entire first die pad 21 becomes more densely filled.

[0062] As viewed in the third direction y, each of the two seventh leads 37 overlaps the second die pad 22. This configuration makes the flow rate of the molten resin that flows in the cavity of the molding die on both sides in the first direction z with the second die pad 22 as the reference point more uniform. As a result, as viewed in the first direction z, the portion of the sealing resin 50 that overlaps the entire second die pad 22 becomes more densely filled.

[0063] The semiconductor device A10 further includes an insulating element 13, a third conductive member 43, and a fourth conductive member 44. In the first direction z, each of the third conductive member 43 and the fourth conductive member 44 is located between either the first mounting surface 21A of the first die pad 21 or the second mounting surface 22A of the second die pad 22 and the top surface 51 of the sealing resin 50. This configuration makes it possible to increase the area of ​​the sealing resin 50 covering the third conductive member 43 and the area of ​​the sealing resin 50 covering the fourth conductive member 44 without increasing the size of the sealing resin 50. This makes it possible to more effectively suppress a decrease in the dielectric strength voltage of the semiconductor device A10.

[0064] The first die pad 21 is provided with two first holes 211 and two second holes 212 that each penetrate in the first direction z. The two first holes 211 are located on both sides of the first semiconductor element 11 in the third direction y. The second hole 212 is located between the first semiconductor element 11 and the insulating element 13 in the second direction x. With this configuration, the molten resin passes through the two first holes 211 and the second hole 212 in the cavity of the molding die, making the filling state of the sealing resin 50 even more dense.

[0065] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 10 and 11. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 10 shows the sealing resin 50 in a see-through manner. In Figure 10, the outline of the sealing resin 50 is shown by imaginary lines.

[0066] In the semiconductor device A20, the configurations of the plurality of first leads 31 and the plurality of second leads 32 are different from those of the semiconductor device A10.

[0067] 11 , the top surface 51 of the sealing resin 50 is located closer to the first connection surface 311A ​​of each of the plurality of first leads 31 than is the first mounting surface 21A of the first die pad 21. The top surface 51 is located closer to the second connection surface 321A of each of the plurality of second leads 32 than is the second mounting surface 22A of the second die pad 22.

[0068] Next, the effects of the semiconductor device A20 will be described.

[0069] The semiconductor device A20 includes a first die pad 21, a first semiconductor element 11, a first lead 31, a first conductive member 41, and a sealing resin 50. The first lead 31 protrudes from a first side surface 53 of the sealing resin 50. A first distance D1 is a distance between a first mounting surface 21A of the first die pad 21 and a top surface 51 of the sealing resin 50 in the first direction z. A second distance D2 is a distance between a first back surface 21B of the first die pad 21 and a bottom surface 52 of the sealing resin 50 in the first direction z. A third distance D3 is a distance between a first element surface 11A of the first semiconductor element 11 and the top surface 51 in the first direction z. These distances satisfy the relationship D1 > D2 ≥ D3. Furthermore, the first conductive member 41 is located between the first mounting surface 21A and the top surface 51 in the first direction z. Therefore, with this configuration, it is possible to suppress a decrease in the dielectric strength voltage of the semiconductor device A20 without increasing the size of the semiconductor device A20. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0070] In the semiconductor device A20, the top surface 51 of the sealing resin 50 is located closer to the first connection surface 311A ​​of the first lead 31 than to the first mounting surface 21A of the first die pad 21. By adopting this configuration, the length of the first conductive member 41 can be further shortened.

[0071] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 12 to 16. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Here, for ease of understanding, Figure 13 shows the sealing resin 50 in a see-through manner. In Figure 13, the outline of the sealing resin 50 is shown by imaginary lines.

[0072] In the semiconductor device A30, the configuration of the third lead 33 is different from that of the semiconductor device A10.

[0073] 12 and 13 , the third inner portion 331 of the third lead 33 is connected to one side of the first die pad 21 in the second direction x. The third lead 33 is located between two of the multiple first leads 31 in the third direction y. The third lead 33 is located on the opposite side of the second die pad 22 from the first die pad 21 in the second direction x.

[0074] 12 and 13 , the semiconductor device A30 has one seventh lead 37 instead of two seventh leads 37. The seventh lead 37 is located on one side of the first die pad 21 in the third direction y. The multiple first leads 31 and the third lead 33 are located between the seventh lead 37 and the fifth lead 35 in the third direction y.

[0075] Next, the effects of the semiconductor device A30 will be described.

[0076] The semiconductor device A30 includes a first die pad 21, a first semiconductor element 11, a first lead 31, a first conductive member 41, and a sealing resin 50. The first lead 31 protrudes from a first side surface 53 of the sealing resin 50. A first distance D1 is defined as the distance between the first mounting surface 21A of the first die pad 21 and the top surface 51 of the sealing resin 50 in the first direction z. A second distance D2 is defined as the distance between the first back surface 21B of the first die pad 21 and the bottom surface 52 of the sealing resin 50 in the first direction z. A third distance D3 is defined as the distance between the first element surface 11A of the first semiconductor element 11 and the top surface 51 in the first direction z. These distances satisfy the relationship D1 > D2 ≥ D3. Furthermore, the first conductive member 41 is located between the first mounting surface 21A and the top surface 51 in the first direction z. Therefore, with this configuration, it is possible to suppress a decrease in the dielectric strength voltage of the semiconductor device A30 without increasing the size of the semiconductor device A30. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0077] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0078] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first die pad having a first mounting surface and a first back surface facing opposite each other in a first direction; a first semiconductor element mounted on the first mounting surface; a first lead spaced from the first die pad; a first conductive member conductively joined to the first semiconductor element and the first lead; and a sealing resin covering the first die pad, the first semiconductor element, and the first conductive member, wherein the first semiconductor element has a first element surface facing the same side as the first mounting surface in the first direction, and the sealing resin has a top surface facing the same side as the first mounting surface in the first direction, a bottom surface facing the opposite side from the top surface in the first direction, and a first side surface facing one side in a second direction perpendicular to the first direction, and the first lead protruding from the first side surface. A semiconductor device in which, when a first distance between the first mounting surface and the top surface in the first direction is defined as D1, a second distance between the first back surface and the bottom surface in the first direction is defined as D2, and a third distance between the first element surface and the top surface in the first direction is defined as D3, the relationship D1 > D2 ≧ D3 is satisfied, and the first conductive member is located between the first mounting surface and the top surface in the first direction. Appendix 2. The semiconductor device according to Appendix 1, wherein the first side includes a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the second region with respect to the first region, each of the second region and the third region is inclined with respect to the first region, the first lead protrudes from the first region, and an inclination angle of the second region with respect to the first region is greater than an inclination angle of the third region with respect to the first region. Appendix 3. The semiconductor device according to Supplementary Note 2, wherein the first conductive member is a wire.Supplementary Note 4: The semiconductor device according to Supplementary Note 3, wherein the first lead has a first connection surface facing the same side as the first mounting surface in the first direction, and the first conductive member is conductively bonded to the first connection surface.Supplementary Note 5: The semiconductor device according to Supplementary Note 4, wherein the first connection surface and the first mounting surface are included in the same plane.Appendix 6. The semiconductor device according to Appendix 4, wherein the top surface is located closer to the first connection surface than the first mounting surface. Appendix 7. The semiconductor device according to Appendix 4, wherein the first lead has a first mounting surface that is exposed from the sealing resin and faces the opposite side to the first connection surface in the first direction, the first mounting surface is located farthest from the first connection surface in the first direction, and the first mounting surface protrudes from a plane that includes the bottom surface. Appendix 8. The semiconductor device according to Appendix 7, wherein the first mounting surface is inclined with respect to the bottom surface. Appendix 9. the semiconductor device further comprises: a second die pad having a second mounting surface facing the same side as the first mounting surface in the first direction and a second back surface facing the opposite side to the second mounting surface in the first direction; a second semiconductor element mounted on the second mounting surface; a second lead spaced from the second die pad; and a second conductive member conductively joined to the second semiconductor element and the second lead, wherein the second semiconductor element has a second element surface facing the same side as the second mounting surface in the first direction, the sealing resin has a second side facing the opposite side to the first side in the second direction, the second die pad, the second semiconductor element, and the second conductive member are covered with the sealing resin, and the second lead protrudes from the second side, The semiconductor device according to any one of Supplementary Notes 1 to 8, wherein a fourth distance between the second mounting surface and the top surface in the first direction is defined as D4, a fifth distance between the second back surface and the bottom surface in the first direction is defined as D5, and a sixth distance between the second element surface and the top surface in the first direction is defined as D6, satisfying the relationship D4>D5≧D6, and the second conductive member is located between the second mounting surface and the top surface in the first direction. Supplementary Note 10. The semiconductor device according to Supplementary Note 9, wherein the second conductive member is a wire. Supplementary Note 11. The semiconductor device according to Supplementary Note 10, further comprising a third lead coupled to the first die pad, the third lead protruding from the first side surface. Supplementary Note 12. The semiconductor device according to Supplementary Note 11, wherein the sealing resin has two third side surfaces spaced apart from each other in a third direction orthogonal to each of the first direction and the second direction, and the third lead is spaced apart from each of the two third side surfaces.Appendix 13. The semiconductor device according to Appendix 12, wherein the third lead is coupled to one side of the first die pad in the first direction. Appendix 14. The semiconductor device according to Appendix 12, further comprising a fourth lead coupled to the second die pad, wherein the fourth lead protrudes from the second side surface. Appendix 15. The semiconductor device according to Appendix 14, wherein the fourth lead is spaced apart from each of the two third side surfaces. Appendix 16. The semiconductor device according to Appendix 15, further comprising: an insulating element mounted on the first mounting surface; a third conductive member conductively bonded to the insulating element and the first semiconductor element; and a fourth conductive member conductively bonded to the insulating element and the second semiconductor element, wherein, in the first direction, each of the third conductive member and the fourth conductive member is located between either the first mounting surface or the second mounting surface and the top surface, and each of the third conductive member and the fourth conductive member is a wire. Appendix 17. 17. The semiconductor device according to claim 16, wherein a distance from the top surface to the fourth conductive member in the first direction is shorter than a distance from the top surface to the third conductive member.

[0079] A10, A20, A30: semiconductor device 11: first semiconductor element 11A: first element surface 111: first electrode 12: second semiconductor element 12A: second element surface 121: second electrode 13: insulating element 131: third electrode 132: fourth electrode 21: first die pad 21A: first mounting surface 21B: first back surface 211: first hole 212: second hole 213: third hole 22: second die pad 22A: second mounting surface 22B: second back surface 29: bonding layer 31: first lead 311: inner part 311A: first connecting surface 312: outer part 312A: first mounting surface 32: second lead 321: inner part 321A: second connecting surface 322: outer part 322A: Second mounting surface 33: Third lead 331: Third inner part 332: Third outer part 34: Fourth lead 341: Fourth inner part 342: Fourth outer part 35: Fifth lead 351: Fifth inner part 352: Fifth outer part 36: Sixth lead 361: Sixth inner part 362: Sixth outer part 37: Seventh lead 371: Seventh inner part 372: Seventh outer part 41-44: First to fourth conductive members 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 531-533: First to third regions 54: Second side surface 541-543: Fourth to sixth regions 55: Third side surface 551 to 553: 7th area to 9th area z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a first die pad having a first mounting surface and a first back surface facing opposite each other in a first direction; a first semiconductor element mounted on the first mounting surface; a first lead spaced from the first die pad; a first conductive member conductively joined to the first semiconductor element and the first lead; and a sealing resin covering the first die pad, the first semiconductor element, and the first conductive member, wherein the first semiconductor element has a first element surface facing the same side as the first mounting surface in the first direction, and the sealing resin has a top surface facing the same side as the first mounting surface in the first direction, a bottom surface facing the opposite side to the top surface in the first direction, and a first side surface facing one side in a second direction perpendicular to the first direction, and the first lead protrudes from the first side surface, a semiconductor device in which a first distance between the first mounting surface and the top surface in the first direction is D1, a second distance between the first back surface and the bottom surface in the first direction is D2, and a third distance between the first element surface and the top surface in the first direction is D3, satisfying the relationship D1>D2≧D3, and the first conductive member is located between the first mounting surface and the top surface in the first direction.

2. The semiconductor device of claim 1, wherein the first side includes a first region that includes the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the second region with respect to the first region, each of the second region and the third region being inclined with respect to the first region, the first lead protruding from the first region, and an inclination angle of the second region with respect to the first region being greater than an inclination angle of the third region with respect to the first region.

3. The semiconductor device according to claim 2, wherein the first conductive member is a wire.

4. The semiconductor device according to claim 3, wherein the first lead has a first connection surface facing the same side as the first mounting surface in the first direction, and the first conductive member is conductively joined to the first connection surface.

5. The semiconductor device according to claim 4, wherein said first connection surface and said first mounting surface are included in the same plane.

6. The semiconductor device according to claim 4, wherein said top surface is located closer to said first connection surface than said first mounting surface.

7. The semiconductor device according to claim 4, wherein the first lead has a first mounting surface that is exposed from the sealing resin and faces the opposite side to the first connection surface in the first direction, the first mounting surface is located farthest from the first connection surface in the first direction, and the first mounting surface protrudes from within a plane that includes the bottom surface.

8. The semiconductor device according to claim 7, wherein the first mounting surface is inclined with respect to the bottom surface.

9. A second die pad having a second mounting surface facing the same side as the first mounting surface in the first direction and a second back surface facing the opposite side to the second mounting surface in the first direction, a second semiconductor element mounted on the second mounting surface, a second lead spaced from the second die pad, and a second conductive member conductively joined to the second semiconductor element and the second lead, wherein the second semiconductor element has a second element surface facing the same side as the second mounting surface in the first direction, the sealing resin has a second side facing the opposite side to the first side in the second direction, the second die pad, the second semiconductor element and the second conductive member are covered with the sealing resin, and the second lead protrudes from the second side, 9. The semiconductor device of claim 1, wherein a fourth distance between the second mounting surface and the top surface in the first direction is D4, a fifth distance between the second back surface and the bottom surface in the first direction is D5, and a sixth distance between the second element surface and the top surface in the first direction is D6, the relationship D4>D5≧D6 is satisfied, and the second conductive member is located between the second mounting surface and the top surface in the first direction.

10. The semiconductor device according to claim 9, wherein the second conductive member is a wire.

11. The semiconductor device according to claim 10, further comprising a third lead connected to said first die pad, said third lead protruding from said first side surface.

12. The semiconductor device according to claim 11, wherein the sealing resin has two third side surfaces spaced apart from each other in a third direction perpendicular to each of the first direction and the second direction, and the third lead is spaced apart from each of the two third side surfaces.

13. The semiconductor device according to claim 12, wherein the third lead is connected to one side of the first die pad in the first direction.

14. The semiconductor device according to claim 12, further comprising a fourth lead connected to said second die pad, said fourth lead protruding from said second side surface.

15. The semiconductor device according to claim 14, wherein said fourth lead is spaced apart from each of said two third sides.

16. The semiconductor device described in claim 15, further comprising: an insulating element mounted on the first mounting surface; a third conductive member conductively joined to the insulating element and the first semiconductor element; and a fourth conductive member conductively joined to the insulating element and the second semiconductor element, wherein in the first direction, each of the third conductive member and the fourth conductive member is located between either the first mounting surface or the second mounting surface and the top surface, and each of the third conductive member and the fourth conductive member is a wire.

17. The semiconductor device according to claim 16, wherein a distance from said top surface to said fourth conductive member in said first direction is shorter than a distance from said top surface to said third conductive member.

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