Substrate processing method, method for manufacturing semiconductor device, substrate processing device, and program

Abstract

The purpose of the present invention is to provide a technology capable of improving the step coverage of a film formed on a substrate.　The present invention includes a supply step for supplying a processing gas to a substrate from a storage part in which the processing gas is stored. The supply step is carried out such that the amount of gas in the storage part when the supply step has ended is at or above a prescribed amount.

Description

Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus and program

[0001] The present disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a program.

[0002] A process gas may be supplied to a substrate to form a film on the substrate having recesses formed on its surface (see, for example, Patent Document 1).

[0003] International Publication No. 2022 / 196339

[0004] The present disclosure provides a technique that can improve the step coverage of a film formed on a substrate.

[0005] According to one aspect of the present disclosure, there is provided a technology that includes a supply process for supplying a processing gas to a substrate from a storage section in which the processing gas is stored, wherein the amount of gas in the storage section at the end of the supply process is set to be equal to or greater than a predetermined amount.

[0006] According to the present disclosure, it is possible to improve the step coverage of a film formed on a substrate.

[0007] FIG. 1 is a longitudinal cross-sectional view showing an outline of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 2A is a diagram showing a first process gas supply system according to an embodiment of the present disclosure, FIG. 2B is a diagram showing a second process gas supply system according to an embodiment of the present disclosure, and FIG. 2C is a diagram showing an exhaust system according to an embodiment of the present disclosure. FIG. 3 is a schematic configuration diagram of a controller of a substrate processing apparatus according to an embodiment of the present disclosure, and is a diagram showing a control system of the controller in a block diagram. FIG. 4 is a diagram showing a substrate processing sequence according to an embodiment of the present disclosure. FIG. 5 is a flow diagram showing details of the first process gas supply step of FIG. 4. FIG. 6 is a conceptual diagram of the inside of a tank during the first process gas supply step of FIG. 4.

[0008] Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Figures 1 to 8. Note that all drawings used in the following description are schematic, and the dimensional relationships, ratios, etc. of elements shown in the drawings do not necessarily match those of reality. Furthermore, the dimensional relationships, ratios, etc. of elements between multiple drawings do not necessarily match.

[0009] (1) Configuration of the Substrate Processing Apparatus The configuration of the substrate processing apparatus 10 will be described with reference to FIG.

[0010] The substrate processing apparatus 10 includes a reaction tube storage chamber 206b, which includes a cylindrical reaction tube 210 extending vertically, a heater 211 as a heating unit (furnace body) installed on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. The gas supply unit may include an upstream rectifier 214 and nozzles 223 and 224, which will be described later. The gas exhaust unit may include a downstream rectifier 215, which will be described later. Within the reaction tube 210, a section in which a substrate S is processed is referred to as a processing chamber 201. The processing chamber 201 may also be referred to as a processing space in which the substrate S is placed.

[0011] The gas supply structure 212 is provided upstream of the reaction tube 210 in the gas flow direction, and gas is supplied from the gas supply structure 212 into the reaction tube 210, and the gas is supplied horizontally to the substrate S. The gas exhaust structure 213 is provided downstream of the reaction tube 210 in the gas flow direction, and the gas inside the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212, the inside of the reaction tube 210, and the gas exhaust structure 213 are horizontally connected to each other.

[0012] An upstream rectifier 214 for rectifying the flow of gas supplied from the gas supply structure 212 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the gas supply structure 212. In addition, a downstream rectifier 215 for rectifying the flow of gas exhausted from the reaction tube 210 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213. The lower end of the reaction tube 210 is supported by a manifold 216.

[0013] The reaction tube 210, the upstream rectifier 214, and the downstream rectifier 215 have a continuous structure and are made of a material such as quartz or SiC. These are made of a heat-transmitting member that transmits heat radiated from the heater 211. The heat from the heater 211 heats the substrate S and the gas.

[0014] The gas supply structure 212 is connected to a gas supply pipe 251 and a gas supply pipe 261 and includes a distribution unit 225 that distributes gas supplied from each gas supply pipe. A plurality of nozzles 223 and 224 are provided downstream of the distribution unit 225. The gas supply pipe 251 and the gas supply pipe 261 supply different types of gas as described below. The nozzles 223 and 224 are arranged in an up-down relationship or a side-by-side relationship. In this embodiment, the gas supply pipe 251 and the gas supply pipe 261 are collectively referred to as gas supply pipes 221. Each nozzle is also referred to as a gas discharge unit. The distribution unit 225 is configured to supply gas from the gas supply pipe 251 to the nozzle 223 and from the gas supply pipe 261 to the nozzle 224, respectively.

[0015] The upstream rectifier 214 has a housing 227 and a partition plate 226. The partition plate 226 extends horizontally and has a continuous structure without holes. The horizontal direction here refers to the direction toward the side wall of the housing 227. Multiple partition plates 226 are arranged vertically. The partition plates 226 are fixed to the side wall of the housing 227 and are configured to prevent gas from moving beyond the partition plate 226 to adjacent areas below or above.

[0016] Each partition plate 226 is provided at a position corresponding to each substrate S. Nozzles 223 and 224 are provided between the partition plates 226 and between the partition plates 226 and the housing 227. The gas discharged from the nozzles 223 and 224 has its flow adjusted by the partition plates 226 and is supplied to the surface of the substrate S. In other words, when viewed from the substrate S, the gas is supplied from the lateral direction of the substrate S.

[0017] The downstream rectification section 215 is configured so that when the substrate S is supported on the substrate support 300, the ceiling is higher than that of the substrate S arranged at the top, and the bottom is lower than that of the substrate S arranged at the bottom of the substrate support 300.

[0018] The downstream rectification section 215 has a housing 231 and a partition plate 232. The partition plate 232 extends horizontally and has a continuous structure without holes. The horizontal direction here refers to the direction toward the side wall of the housing 231. Furthermore, multiple partition plates 232 are arranged vertically. The partition plate 232 is fixed to the side wall of the housing 231 and is configured to prevent gas from moving beyond the partition plate 232 to adjacent areas below or above.

[0019] The partition plates 232 are provided at positions corresponding to the substrates S, respectively, and at positions corresponding to the partition plates 226. It is desirable that the corresponding partition plates 226 and 232 are at the same height. Furthermore, when processing the substrates S, it is desirable that the height of the substrates S and the height of the partition plates 226 and 232 are aligned. This suppresses vertical flow from the partition plate 226, over the substrates S, and the partition plate 232, and equalizes the difference in gas pressure over each substrate S. Therefore, each substrate S can be processed uniformly.

[0020] By arranging the partition plates 226 and 232 in the positional relationship described above, it is possible to uniformize the pressure loss in the vertical direction upstream and downstream of each substrate S. That is, as shown by the arrows in the figure, it is possible to reliably form a horizontal gas flow in which the vertical flow is suppressed from the partition plate 226, over the substrate S, to the partition plate 232. Therefore, it is possible to reduce the difference in gas pressure over each substrate S. This allows each substrate S to be processed uniformly.

[0021] The gas exhaust structure 213 is provided downstream of the downstream rectifier 215. The gas exhaust structure 213 is mainly composed of a housing 241 and an exhaust pipe connection part 242. The housings 231 and 241 have a structure in which the heights of their respective ceilings and bottoms are continuous. An exhaust hole 244 is formed on the downstream side of the housing 241, on the lower side or in the horizontal direction, for exhausting gas that has passed through the downstream rectifier 215. The gas exhaust structure 213 is provided laterally of the reaction tube 210, and is a lateral exhaust structure that exhausts gas from the lateral direction of the substrate S.

[0022] The transfer chamber 217 is installed at the bottom of the reaction tube 210 via a manifold 216. In the transfer chamber 217, a vacuum transfer robot places (loads) a substrate S onto a substrate support (hereinafter, may be simply referred to as a boat) 300 via a substrate loading port, and the vacuum transfer robot also takes out the substrate S from the substrate support 300.

[0023] The transfer chamber 217 can accommodate a substrate support 300, a partition plate support 310, and a vertical drive mechanism 400 that drives the substrate support 300 and the partition plate support 310 (collectively referred to as a substrate holder) in the vertical and rotational directions. In Fig. 1, the substrate support 300 is shown raised by the vertical drive mechanism 400 and stored in the reaction tube 210.

[0024] The vertical drive mechanism 400 includes a rotation drive mechanism 430 that rotates the substrate support 300 and the partition plate support 310 together, and a boat up / down mechanism 420 that drives the substrate support 300 up and down relative to the partition plate support 310. The rotation drive mechanism 430 and the boat up / down mechanism 420 are fixed to a base flange 401 serving as a lid supported by a side plate 403 on a base plate 402. An O-ring 446 for vacuum sealing is installed on the upper surface of the base flange 401. As shown in FIG. 1 , the base flange 401 is driven by the vertical drive motor 410 to raise the upper surface of the base flange 401 to a position where it is pressed against the transfer chamber 217, thereby maintaining the interior of the reaction tube 210 airtight. A vacuum bellows 443 connects the support 440 and a support 441 fixed to the substrate support 300.

[0025] The substrate support unit is composed of at least a substrate support 300 that supports a substrate S, and is stored in the reaction tube 210. The substrate support unit transfers the substrate S using a vacuum transfer robot through a substrate loading port (not shown) inside the transfer chamber 217, and transports the transferred substrate S into the reaction tube 210 to perform processing to form a thin film on the surface of the substrate S. The substrate loading port is provided, for example, in a side wall of the transfer chamber 217. The substrate support unit may also include a partition plate support unit 310.

[0026] A plurality of substrates S are placed on the substrate support 300 at predetermined intervals in the vertical direction (perpendicular direction). Here, partition plates 314 are placed directly below the substrates S and above and / or below the substrates S. The partition plates 314 separate the spaces between the substrates S. The predetermined intervals between the plurality of substrates S placed on the substrate support 300 are the same as the vertical intervals between the partition plates 314 fixed to the partition plate support parts 310. In addition, the diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0027] Note that, although an example in which five substrates S are supported on the substrate support 300 is shown here, this is not limiting. For example, the substrate support 300 may be configured to be able to support approximately 5 to 50 substrates S. The partition plates 314 are also called separators. Note that in this specification, a numerical range such as "5 to 50 substrates" means that the lower and upper limits are included in the range. Therefore, for example, "5 to 50 substrates" means "5 or more and 50 or less substrates." The same applies to other numerical ranges.

[0028] Next, the gas supply system and exhaust system will be described in detail with reference to FIGS.

[0029] 2A , the gas supply pipe 251 is provided with, in order from the upstream direction, a first process gas source 252, a mass flow controller (MFC) 253 which is a flow rate controller (flow rate control part), a valve 275 which is an on-off valve, a tank 259 which is a storage part that stores gas therein, a pressure sensor 301 which is a pressure measuring device (pressure measurement part) that measures the pressure inside the tank 259, and a valve 254. Here, the pressure sensor 301 can be regarded as an example of a measurement part that measures the amount of gas in the tank 259, or a detection part that detects that the amount of gas in the tank 259 has reached a specific amount.

[0030] The first process gas source 252 is a gas source for supplying a first process gas as a process gas. The first process gas is a source gas and is one of the process gases. Alternatively, a vaporizer or the like may be used as the first process gas source 252. A first process gas supply system 250 (also referred to as a source gas supply system) is mainly composed of the gas supply pipe 251, the MFC 253, the valve 275, the tank 259, the pressure sensor 301, and the valve 254. The first process gas source 252 may be included in the first process gas supply system 250.

[0031] A gas exhaust pipe 302 is connected to the gas supply pipe 251 between the pressure sensor 301 and the valve 254. The gas exhaust pipe 302 exhausts the gas in the tank 259 to the outside of the processing chamber 201 without supplying the gas to the processing chamber 201. A valve 303 is provided on the gas exhaust pipe 302. The gas exhaust pipe 302 and the valve 303 mainly configure a first processing gas exhaust system (also referred to as a source gas exhaust system). The first processing gas exhaust system may be included in the first processing gas supply system 250.

[0032] A gas supply pipe 255 is connected to the gas supply pipe 251 between the valve 275 and the tank 259. An inert gas source 256, an MFC 257, and a valve 258 are provided in the gas supply pipe 255, in this order from the upstream direction. An inert gas is supplied from the inert gas source 256. A first inert gas supply system is mainly configured by the gas supply pipe 255, the MFC 257, and the valve 258. In the substrate processing step, the inert gas supplied from the inert gas source 256 acts as a purge gas that purges gas remaining in the reaction tube 210. The inert gas source 256 may be included in the first inert gas supply system. The first inert gas supply system may be included in the first process gas supply system 250.

[0033] 2B , the gas supply pipe 261 is provided with, in this order from the upstream side, a second process gas source 262, an MFC 263, and a valve 264. The second process gas source 262 is a gas source for supplying a second process gas as a process gas. The second process gas is a reactive gas or a modifying gas that reacts with the source gas, and is one of the process gases. A second process gas supply system 260 (also referred to as a reactive gas supply system) is mainly composed of the gas supply pipe 261, the MFC 263, and the valve 264. The second process gas source 262 may be included in the second process gas supply system 260.

[0034] A gas supply pipe 265 is connected to the gas supply pipe 261 downstream of the valve 264. An inert gas source 266, an MFC 267, and a valve 268 are installed in the gas supply pipe 265, in this order from the upstream direction. An inert gas is supplied from the inert gas source 266. A second inert gas supply system is mainly configured by the gas supply pipe 265, the MFC 267, and the valve 268. In the substrate processing step, the inert gas supplied from the inert gas source 266 acts as a purge gas that purges gas remaining in the reaction tube 210. The inert gas source 266 may be included in the second inert gas supply system. The second inert gas supply system may be included in the second process gas supply system 260.

[0035] 2C, the exhaust system will be described. The exhaust system 280, which exhausts the atmosphere in the reaction tube 210, has an exhaust pipe 281 communicating with the reaction tube 210, and is connected to the housing 241 via an exhaust pipe connector 242.

[0036] 2C , a vacuum pump 284 serving as a vacuum exhaust device is connected to the exhaust pipe 281 via a valve 282 and an APC (Auto Pressure Controller) valve 283 serving as a pressure regulator (pressure adjustment unit), and the reaction tube 210 is configured to be evacuated to a predetermined pressure (vacuum level). The exhaust pipe 281, the valve 282, and the APC valve 283 are collectively referred to as an exhaust system 280. The exhaust system 280 is also referred to as a processing chamber exhaust system. The vacuum pump 284 may be included in the exhaust system 280.

[0037] Next, a controller serving as a control section (control means) will be described with reference to Fig. 3. The substrate processing apparatus 10 has a controller 600 that controls the operation of each section of the substrate processing apparatus 10.

[0038] 3 shows an outline of the controller 600. The controller 600 is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605.

[0039] The storage device 603 is configured by, for example, a flash memory, a hard disk drive (HDD), etc. A control program for controlling the operation of the substrate processing apparatus 10, a process recipe describing the procedures and conditions for substrate processing, etc. are readably stored in the storage device 603.

[0040] The process recipe functions as a program, which is a combination of procedures in a substrate processing step (described later) that are executed by the controller 600 to obtain a predetermined result. Hereinafter, the process recipe, control program, etc. are collectively referred to as simply a program. In this specification, the term "program" may refer to a process recipe alone, a control program alone, or both. The RAM 602 is configured as a memory area (work area) in which programs, data, etc. read by the CPU 601 are temporarily stored.

[0041] The I / O port 604 is connected to the above-mentioned vertical drive mechanism 400, heater 211, APC valve 283, vacuum pump 284, MFCs 253, 257, 263, 267, valves 254, 258, 264, 268, 275, 282, 303, pressure sensor 301, rotation drive mechanism 430, etc.

[0042] The CPU 601 is configured to read and execute a control program from the storage device 603, and also to read a process recipe from the storage device 603 in response to input of an operation command from the input / output device 681. The CPU 601 is configured to control, in accordance with the contents of the read process recipe, the lifting and lowering operation of the substrate support 300 by the vertical direction drive mechanism 400, the heating operation by the heater 211, the opening and closing operation of the APC valve 283, the start and stop of the vacuum pump 284, the flow rate adjustment operation of various gases by the MFCs 253, 257, 263, and 267, the opening and closing operation of the valves 254, 258, 264, 268, 275, 282, and 303, the pressure measurement operation in the tank 259 by the pressure sensor 301, the rotation of the substrate support 300 and the adjustment of the rotation speed by the rotation drive mechanism 430, and the like. The MFCs 253 , 257 , 263 , and 267 , the valves 254 , 258 , 264 , 268 , 275 , 282 , and 303 , the APC valve 283 , and the vacuum pump 284 can be used as a gas control unit configured to be able to control the supply and exhaust of gas into the processing chamber 201 .

[0043] The controller 600 according to this embodiment can be configured by installing the program into a computer using an external storage device 682 (e.g., a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) storing the program. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 682. For example, the program may be supplied via a communication means such as the Internet or a dedicated line, without going through the external storage device 682. The storage device 603 and the external storage device 682 are configured as computer-readable recording media on which the program is recorded. Hereinafter, these are collectively referred to as recording media. In this specification, the term "recording medium" may refer to the storage device 603 alone, the external storage device 682 alone, or both.

[0044] (2) Substrate Processing Step Next, as one step in the manufacturing process of a semiconductor device, a step of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above-described configuration will be described with reference to Figures 4 to 8. In the following description, the operation of each part of the substrate processing apparatus 10 is controlled by a controller 600.

[0045] Here, a film forming process for forming a film in a recess such as a trench or a hole of the substrate S using a first process gas and a second process gas will be described.

[0046] The term "substrate" used in this specification may refer to the substrate itself or to a laminate of the substrate and a predetermined layer or film formed on its surface. The term "surface of the substrate" used in this specification may refer to the surface of the substrate itself or to the surface of a predetermined layer or the like formed on the substrate. When described in this specification, "forming a predetermined layer on a substrate" may mean forming a predetermined layer directly on the surface of the substrate itself or forming a predetermined layer on a layer or the like formed on the substrate. When used in this specification, the term "wafer" is synonymous with the term "substrate".

[0047] (Substrate Loading Step S1) A plurality of substrates S are loaded (wafer charge) onto the substrate support 300 in the transfer chamber 217. Then, the substrate support 300 supporting the substrates S is raised by the vertical drive mechanism 400, and the substrates S are loaded (boat load) into the reaction tube 210, and the lower end of the reaction tube 210 is sealed by the base flange 401 via an O-ring 446. At this time, the surfaces of the substrates S are positioned so that they are flush with the height of the partition plates 226 and 232.

[0048] (Pressure / Temperature Adjustment Step S2) The reaction tube 210 is evacuated by the vacuum pump 284 to a desired pressure (pressure adjustment). The processing chamber 201 is heated by the heater 211 to a desired temperature (temperature adjustment). The rotation of the substrate S is started by the rotation drive mechanism 430. These various operations are continued at least until the processing of the substrate S is completed.

[0049] (Membrane treatment step S4) Subsequently, the membrane treatment step S4 is performed by performing the following first treatment gas supply step S41, purge gas supply step S42, second treatment gas supply step S43, and purge gas supply step S44 a predetermined number of times (n times, where n is an integer of 1 or 2 or more).

[0050] [First Processing Gas Supply Step S41] Subsequently, the first processing gas is flush-supplied to the processing chamber 201 in which the substrate S is placed. Here, flush supply refers to supplying a large flow rate of gas into the reaction tube 210 in a short period of time.

[0051] The first process gas supply step S41 is performed by performing the next storage step S411 and supply step S412 a predetermined number of times (p times, where p is an integer of 1 or greater). FIG. 7 is a flow diagram showing details of the first process gas supply step S41, and FIG. 8 is an image diagram for explaining the first process gas supply step S41. In FIG. 8, the height of a gray rectangle in the tank 259 schematically represents the amount of the first process gas stored in the tank 259. Also, FIG. 8 shows, from left to right, the amounts of the first process gas stored in the tank 259 at the start of the storage step S411, the end of the storage step S411 and the start of the supply step S411, the end of the supply step S411 and the start of the storage step S411, and the end of the storage step S411 and the start of the supply step S411. Hereinafter, as shown in FIG. 8, a case where the first process gas stored in the tank 259 is equal to or greater than a predetermined amount X at the start of the first process gas supply step S41 will be described as an example.

[0052] In this step, valve 275 is opened while valves 254, 258, 303, 264, and 268 are closed, and after a predetermined time has elapsed, valve 275 is closed. At this time, the first process gas whose flow rate has been adjusted by MFC 253 is filled into tank 259 in which the first process gas is stored to an amount equal to or greater than a predetermined amount X, and after the predetermined time has elapsed, valve 275 is closed.

[0053] At this time, the flow rate of the first process gas supplied to the tank 259 and / or the time for which the first process gas is continuously supplied to the tank 259 are controlled according to the remaining amount of the first process gas in the tank 259. That is, the amount of the first process gas stored in the tank 259 in this step can be changed in each cycle of the first process gas supply step S41. The amount of the first process gas stored in the tank 259 in this step can be adjusted by changing the flow rate of the first process gas supplied to the tank 259 (hereinafter referred to as the stored flow rate) and / or the time for which the first process gas is continuously supplied to the tank 259 (hereinafter referred to as the storage time). As a result, even if the remaining amount of the first process gas in the tank 259 at the end of the supply step S412 (described later) varies between cycles, the amount of the first process gas stored in the tank 259 at the start of the supply step S412 can be kept constant between cycles.

[0054] In this step, either the storage flow rate or the storage time may be kept constant over multiple cycles, while the other may be changed at least once during the multiple cycles. That is, the storage flow rate may be controlled by the MFC 253, or the storage time may be controlled by opening and closing the valve 275, depending on the amount of first process gas remaining in the tank 259 at the end of the supply process S412. Alternatively, both the storage flow rate by the MFC 253 and the storage time by opening and closing the valve 275 may be controlled. By keeping the storage flow rate constant over multiple cycles and changing the storage time at least once during the multiple cycles, the amount of first process gas stored in the tank 259 can be easily controlled even when the pressure inside the tank 259 is high. By keeping the storage time constant over multiple cycles and changing the storage flow rate at least once during the multiple cycles, it is possible to reduce the processing variation between lots that occurs due to changes in the storage time.

[0055] <Supply Process S412> The first process gas stored in the tank 259 is flush-supplied to the substrate S. That is, the valve 254 is opened while the valves 258, 275, 303, 264, and 268 are closed, and then the valve 254 is closed after a predetermined time has elapsed. At this time, the high-pressure first process gas stored in the tank 259 is supplied to the substrate S all at once via the gas supply pipe 251. The first process gas is supplied in large quantities from the gas supply structure 212 through the upstream rectifier 214 into the reaction tube 210 in a short period of time, and then is exposed and exhausted via the space above the substrate S, the downstream rectifier 215, the gas exhaust structure 213, and the exhaust pipe 281. At this time, the valve 282 and the APC valve 283 are open.

[0056] At this time, this step is performed so that the amount of the first process gas remaining in the tank 259 at the end of this step (at the time when the valve 254 is closed) is equal to or greater than a predetermined amount X. In other words, in this step, the valve 254 is closed when the amount of the first process gas in the tank 259 reaches a target amount Z that is equal to or greater than the predetermined amount X. The predetermined amount X can be set to any value between 0.1 and 99% of the amount of the first process gas stored in the tank 259 at the start of the supply step S412 (predetermined amount Y).

[0057] Here, when the predetermined amount X is set to 10 to 90% of the predetermined amount Y, it is easier to control the step coverage and film formation rate to preferred values. If it is less than 10%, the step coverage may decrease due to the first process gas being supplied to the substrate S at a low flow rate. Furthermore, as described below, the temperature of the first process gas may decrease significantly due to the first process gas undergoing an assumption of near-adiabatic expansion, which may result in a decrease in the film formation rate. If it exceeds 90%, the film formation rate may decrease due to the reduced amount of first process gas supplied to the substrate S. Here, it is preferable to set the predetermined amount X to 20 to 85% of the predetermined amount Y, since this further facilitates control of the step coverage and film formation rate to preferred values. Furthermore, it is even more preferable to set the predetermined amount X to 30 to 80% of the predetermined amount Y, since this greatly facilitates control of the step coverage and film formation rate.

[0058] This allows the first process gas to be flush-supplied to the substrate S under desired conditions. Specifically, the first process gas can be flush-supplied so that at least one of the flow rate, residence time, decomposition rate, and partial pressure in the process chamber 201 falls within a desired range. In other words, by ensuring that a predetermined amount X or more of the first process gas remains in the tank 259 at the end of this step, the flow rate of the first process gas in this step can be set to a predetermined flow rate or higher, and the residence time of the first process gas in the process chamber 201 can be shortened.

[0059] Here, the predetermined amount X to be left in the tank 259 at the end of this step is set so that the decomposition rate of the first process gas in the process chamber 201, which is the space in which the substrate S exists, is equal to or lower than the predetermined decomposition rate in this step. If the decomposition rate of the first process gas supplied to the substrate S becomes higher than the predetermined decomposition rate, the step coverage may be easily reduced. By preventing the decomposition rate of the first process gas supplied to the substrate S from becoming higher than the predetermined decomposition rate, the step coverage can be improved.

[0060] That is, the predetermined amount X is set so that the flow rate of the first process gas in the process chamber 201 in this step is equal to or greater than the predetermined flow rate. This prevents the decomposition rate of the first process gas supplied to the substrate S from becoming higher than the predetermined decomposition rate. This improves the step coverage.

[0061] Furthermore, when the first process gas is supplied, reaction by-products such as hydrogen chloride (HCl) that inhibit adsorption of the first process gas onto the substrate surface may be generated. Therefore, elements contained in the first process gas are adsorbed onto at least some of the adsorption sites on the surface of the substrate S, but reaction by-products such as HCl are adsorbed onto the adsorption sites on the substrate S and inhibit the adsorption of elements contained in the first process gas. In this step, the flow rate of the first process gas in the process chamber 201 is set to a predetermined flow rate or higher, and the first process gas is flush-supplied. This allows a large amount of the first process gas to be supplied to the substrate S within a short time after the start of supply, thereby reducing the number of adsorption sites on the substrate S for reaction by-products and increasing the amount of adsorption of elements contained in the first process gas. This allows for an improvement in film formation rate and step coverage performance.

[0062] Here, the flow velocity of the first process gas refers to a number that indicates the distance traveled by the first process gas supplied into the process chamber 201 per unit time. Alternatively, the flow velocity may be a number that indicates the distance traveled by the first process gas per unit time within the process chamber 201. Alternatively, the flow velocity may be a number that indicates the distance traveled by the gas per unit time within the process space. Alternatively, the flow velocity of the first process gas may be an average flow velocity of the first process gas over the substrate S. Alternatively, the flow velocity of the first process gas may be an average flow velocity from one location (or region) to another location (or region), such as the average flow velocity from when the first process gas is discharged from a gas supply unit such as the nozzle 223 into the process chamber 201 to when it reaches the exhaust hole 244. Alternatively, the average flow velocity of the first process gas within the process space may be used. Alternatively, the average flow velocity of the first process gas within the process chamber 201 may be used. Alternatively, the flow rate of the first processing gas at a certain point on the substrate S, or in the processing space or the processing chamber 201 may be used.

[0063] Furthermore, by setting the flow rate of the first process gas in the process chamber 201 to be equal to or greater than a predetermined flow rate, the residence time of the first process gas in the process chamber 201 becomes equal to or shorter than the predetermined residence time. That is, the predetermined amount X may be set so that the residence time of the first process gas in the space where the substrate S exists in this step becomes equal to or shorter than the predetermined residence time. This makes it possible to prevent the decomposition rate of the first process gas supplied to the substrate S from becoming higher than the predetermined decomposition rate.

[0064] When forming a film in a recess (or groove, trench, or hole) formed on the substrate S, the more reactive the gas, the more likely it is to be adsorbed to the opening side of the recess and the less likely it is to be adsorbed to the deeper part of the recess. Therefore, when forming a film in a recess using a gas that generates a more reactive substance upon decomposition as the first process gas, the residence time of the first process gas described above can be set to be equal to or shorter than a predetermined residence time, and / or the flow rate of the first process gas can be set to be equal to or higher than a predetermined flow rate, thereby reducing the decomposition rate of the first process gas and improving the step coverage.

[0065] Here, the residence time of the first process gas refers to a number that indicates the time it takes for the first process gas supplied into the process chamber 201 to be exhausted from the process chamber 201. Alternatively, it may be a number that indicates the time it takes for the gas to depart from the process space after reaching the process space. Alternatively, the residence time of the first process gas may be the time it takes for the first process gas to depart from the substrate S after reaching the substrate S. Alternatively, the residence time of the first process gas may be, for example, the time it takes for the first process gas to depart from the process space after reaching the substrate S. Alternatively, the residence time of the first process gas may be ... Alternatively, the residence time of the first process gas may be the time it takes for the first process gas to depart from the process space after reaching the substrate S. Alternatively, the residence time of the first process gas may be the time it takes for the first process gas to depart from the process space after being discharged from a gas supply unit such as the nozzle 223 to reach the exhaust hole 244. Alternatively, the residence time of the first process gas may be the time it takes for the first process gas to be supplied from the start to the end of supply, such as the time it takes for the valve 254 downstream of the tank 259 to be opened and closed. For example, the residence time may be the time it takes for a specific component of the substrate processing apparatus 10 to start or end a specific operation.

[0066] Furthermore, the predetermined amount X may be set so that the partial pressure of the first process gas in the space where the substrate S exists in this step is equal to or greater than the predetermined partial pressure. This allows the first process gas to more easily reach the deeper parts of the recesses, thereby improving step coverage. Furthermore, the probability of the first process gas colliding with the surface of the substrate S per unit time and per unit area increases. This allows the film formation rate, which is the film thickness formed on the surface of the substrate S per unit time, to be improved.

[0067] Furthermore, the predetermined amount X may be set so that the temperature inside the tank 259 (for example, the temperature of the tank 259 itself or the temperature of the first process gas inside the tank 259) becomes equal to or higher than a predetermined temperature in this step, thereby improving the film formation rate.

[0068] When the first process gas filled in the tank 259 is supplied from the tank 259 to the process chamber 201, the first process gas in the tank 259 expands in a short time. At this time, the first process gas in the tank 259 undergoes a process close to adiabatic expansion, so the temperature of the first process gas released from the tank 259 decreases, and accordingly, the temperatures in the tank 259, the substrate S, and the process chamber 201 also decrease. Furthermore, these temperature decreases make it difficult for the substrate to react with the first process gas and / or the second process gas (the reactivity of the first process gas and / or the second process gas decreases), which may result in a decrease in the film formation rate.

[0069] In this step, the predetermined amount X is set so that the temperature of the tank 259 or the temperature of the first process gas in the tank 259 is equal to or higher than a predetermined temperature. In this case, the decrease in the temperature of the first process gas can be reduced, thereby suppressing the decrease in the reactivity of the first process gas and / or the second process gas. Therefore, the film formation rate can be improved.

[0070] Furthermore, the predetermined amount X may be set so that the first process gas present in the tank 259 is not liquefied or solidified in this step, thereby making it possible to suppress the generation of particles.

[0071] When the first process gas filled in the tank 259 is supplied from the tank 259 to the process chamber 201, the first process gas is supplied to the substrate S through a process close to adiabatic expansion, which causes a decrease in the temperature of the first process gas and the tank 259. At the same time, the pressure inside the tank 259 also decreases. As a result, the temperature and pressure inside the tank 259 may reach a level at which the first process gas liquefies or solidifies. The liquefied or solidified first process gas may cause particle generation.

[0072] In this step, if the predetermined amount X is set so that the first process gas in the tank 259 does not liquefy or solidify, the temperature drop due to the adiabatic expansion of the first process gas can be reduced. This makes it difficult for the first process gas to liquefy or solidify, thereby suppressing the generation of particles.

[0073] That is, the amount of the first process gas in the tank 259 at the end of the supply step S412 can be set so that the first process gas in the tank 259 does not liquefy or solidify between the start and end of the supply step S412. This makes it possible to prevent the source gas from liquefying or solidifying and becoming particles in the tank 259, even when, for example, a source gas that is easily liquefied or solidified due to a decrease in pressure and / or temperature is flash-supplied. In other words, the technology of the present disclosure can be suitably applied even when a process gas obtained by vaporizing a liquid or solid substance at room temperature and normal pressure is flash-supplied.

[0074] In this step, the valve 258 may be opened to supply an inert gas into the gas supply pipe 251 via the gas supply pipe 255. In addition, in order to prevent the first process gas from entering the gas supply pipe 261, the valves 268 and 264 may be opened to supply an inert gas into the gas supply pipe 261.

[0075] <Performance Predetermined Number of Times S413> The cycle of the above-described storing step S411 and supplying step S412 is performed a predetermined number of times (p times, where p is an integer of 1 or greater than 2). This allows the formation of a first layer of a desired thickness.

[0076] Furthermore, during the flash supply, the first process gas stored in the tank 259 is supplied to the process chamber 201 while expanding in a manner close to adiabatic expansion. Therefore, the flash supply reduces the temperature of the first process gas and the temperature of the first process gas supply system 250, including the tank 259. Here, the technology disclosed herein can control the magnitude of the pressure drop in the tank 259 by adjusting the amount of the first process gas in the tank 259 at the end of the flash supply. Therefore, the technology disclosed herein can control the magnitude of the temperature drop in the tank 259 due to the adiabatic expansion of the first process gas associated with the flash supply.

[0077] The amount of the first process gas in the tank 259 may be controlled based on the pressure in the tank 259. That is, the amount of the first process gas in the tank 259 may be controlled based on the pressure in the tank 259 measured by the pressure sensor 301. Here, the control of the pressure in the tank 259 can be considered to be the control of the amount of the first process gas in the tank 259. Therefore, the supply step S412 can be considered to be completed after the measurement unit (e.g., the pressure sensor 301) detects that the amount of gas in the tank 259 is equal to or greater than a predetermined amount.

[0078] That is, the supply step S412 may be performed so that the pressure in the tank 259 at the end of the supply step S412 is equal to or higher than a predetermined pressure. Even in this case, the decomposition rate of the first process gas supplied to the substrate S can be prevented from exceeding the predetermined decomposition rate. Here, the predetermined pressure can be set to any value between 0.1 and 99% of the pressure in the tank 259 at the start of the supply step S412.

[0079] Here, if the predetermined pressure is set to 10 to 90% of the pressure in the tank 259 at the end of the supply process S412, the step coverage and the film formation rate can be easily controlled to preferred values. If the predetermined pressure is less than 10%, the first process gas is supplied to the substrate S at a low flow rate, which may result in a decrease in step coverage. Furthermore, as described below, the temperature of the first process gas may decrease significantly due to the first process gas undergoing an assumption of near-adiabatic expansion, which may result in a decrease in film formation rate. If the predetermined pressure is greater than 90%, the amount of the first process gas supplied to the substrate S may decrease, which may result in a decrease in film formation rate. Here, it is preferable to set the predetermined pressure to 20 to 85% of the pressure in the tank 259 at the end of the supply process S412, as this makes it even easier to control the step coverage and the film formation rate to preferred values. Furthermore, it is more preferable to set the predetermined pressure to 30 to 80% of the pressure in the tank 259 at the end of the supply step S412, since this makes it much easier to control the step coverage and the film formation rate.

[0080] [Purge Gas Supply Process S42] In this step, a purge gas is supplied to the processing chamber 201 in which the substrate S is placed. That is, after a first layer is formed on the substrate S, the valves 275, 303, and 264 are closed, and the valves 254, 258, and 268 are opened to supply an inert gas as a purge gas into the gas supply pipes 251 and 261 via the gas supply pipes 255 and 265. At the same time, the valve 282 and the APC valve 283 of the exhaust pipe 281 are left open, and the processing chamber 201 is evacuated to a vacuum by the vacuum pump 284, and the processing chamber 201 is purged.

[0081] [Second Process Gas Supply Process S43] In this step, the valve 264 is opened while the valves 254, 258, 275, 303, and 268 are closed, and then the valve 264 is closed after a predetermined time has elapsed. At this time, a second process gas whose flow rate is adjusted by the MFC 263 is supplied to the substrate S via the gas supply pipe 261. The second process gas is supplied from the gas supply structure 212 through the upstream rectifier 214 into the reaction tube 210, and then exposed to the atmosphere. The second process gas is then exhausted via the space above the substrate S, the downstream rectifier 215, the gas exhaust structure 213, and the exhaust pipe 281. At this time, the valve 282 and the APC valve 283 are open. Here, the valve 268 may be opened to allow an inert gas to flow into the gas supply pipe 261 via the gas supply pipe 265. Alternatively, to prevent the second process gas from entering the gas supply pipe 251, the valves 258 and 254 may be opened to allow an inert gas to flow into the gas supply pipe 251. This allows the first layer on the substrate S to be modified into the second layer.

[0082] [Purge Gas Supply Process S44] In this step, a purge gas is supplied to the processing chamber 201 in which the substrate S is placed, using the same processing procedure as in the purge gas supply process S42 described above. That is, after the first layer on the substrate S is modified into the second layer, the valves 254, 258, and 268 are opened with the valves 275, 303, and 264 closed, and an inert gas is supplied as a purge gas into the gas supply pipes 251 and 261 via the gas supply pipes 255 and 265. At the same time, the valve 282 and the APC valve 283 of the exhaust pipe 281 are left open, and the processing chamber 201 is evacuated to a vacuum by the vacuum pump 284, and the processing chamber 201 is purged.

[0083] [Performance Predetermined Number of Times S45] The cycle of the above-described first process gas supply step S41, purge gas supply step S42, second process gas supply step S43, and purge gas supply step S44 is performed a predetermined number of times (n times, where n is an integer of 1 or greater). As a result, a film of a predetermined thickness containing elements derived from the first process gas and elements derived from the second process gas is formed on the substrate S having a recess. In this way, a film with improved step coverage and an increased film formation rate can be formed on the substrate S having a recess.

[0084] (Atmospheric Pressure Return Step S5) After the film processing on the substrate S is completed, an inert gas is supplied into the processing chamber 201 and exhausted from the exhaust pipe 281. The inert gas acts as a purge gas, thereby purging the processing chamber 201 with the inert gas and removing gases and reaction by-products remaining in the processing chamber 201 from the processing chamber 201. Thereafter, the atmosphere in the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is returned to normal pressure (atmospheric pressure return).

[0085] (Substrate Unloading Step S6) The vertical drive mechanism 400 lowers the base flange 401, thereby opening the lower end of the reaction tube 210. Then, the processed substrate S is unloaded (boat unloading) to the transfer chamber 217 while being supported by the substrate support 300. The processed substrate S is removed from the substrate support 300 in the transfer chamber 217 (wafer discharging).

[0086] (3) Preliminary Evaluation Step Next, a preliminary evaluation step that is performed before the above-described substrate processing step will be described.

[0087] In the pre-evaluation step, the time from the start of the supply step S412 of the first process gas supply step S41 to the time when the amount of the first process gas in the tank 259 reaches a predetermined amount X is acquired using a predetermined method. Then, the data acquired in this step is used in the above-described substrate processing step. Examples of the predetermined method include acquisition of data from substrate processing or experiments performed in advance, prediction based on the data, numerical calculations including analysis by computational fluid dynamics (CFD), machine learning, deep learning, and the like.

[0088] The current amount of the first process gas in the tank 259 is determined based on the pressure in the tank 259 measured by the pressure sensor 301. The valve 275, the MFC 253, and the like are controlled so that the supply process S412 ends before the time acquired in the preliminary evaluation process has elapsed from the start of the supply process S412, or when the time acquired in the preliminary evaluation process has elapsed. This eliminates the need for control such as ending the flush supply when the pressure sensor 301 or the like measures that the amount of the first process gas in the tank 259 is equal to or greater than the predetermined amount X. In other words, the control by the controller 600 can be simplified.

[0089] Although the gas flow is described as horizontal in the above, it is sufficient that the main stream of gas is formed in the horizontal direction overall, and the gas flow may be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates. Furthermore, although expressions such as "same degree," "equivalent," and "equal" are used above, it goes without saying that these include essentially the same thing.

[0090] Other Embodiments Although the embodiment of this aspect has been specifically described above, the present invention is not limited to this and various modifications are possible without departing from the spirit of the invention.

[0091] In the above-described embodiment, a source gas is used as the first process gas and a reactive gas is used as the second process gas. However, the present invention is not limited to this. A reactive gas may be used as the first process gas and a source gas as the second process gas. Furthermore, a cycle in which the second process gas supply step is followed by the first process gas supply step may be performed a predetermined number of times. That is, the source gas may be flushed and then the reactive gas may be supplied, or the source gas may be supplied and then the reactive gas may be flushed. Furthermore, both the source gas and the reactive gas may be flushed. That is, the source gas may be flushed and then the reactive gas may be flushed. The above-described effects can also be obtained in these cases.

[0092] The source gas may be, for example, a predetermined element-containing gas containing a predetermined element such as tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), hafnium (Hf), zirconium (Zr), aluminum (Al), or silicon (Si). One or more of these may be used as the source gas. A gas obtained by exciting these gases with plasma or the like may also be used as the source gas.

[0093] As the predetermined element-containing gas, for example, a halogen-based predetermined element-containing gas containing a predetermined element and a halogen element can be used. As the halogen-based predetermined element-containing gas, for example, hexachlorotungsten (WCl ６ ), hexafluorotungsten (WF ６ ), titanium tetrachloride (TiCl ４ ), titanium tetrafluoride (TiF ４ ), molybdenum pentachloride (MoCl ５ ), molybdenum pentafluoride (MoF ５ ), molybdenum dioxide dichloride (MoO ２ Cl ２ ), molybdenum oxide tetrachloride (MoOCl ４ ), tantalum pentachloride (TaCl ５ ), tantalum pentafluoride (TaF ５ ), cobalt difluoride (CoF ２ ), cobalt dichloride (CoCl ２ ), yttrium trifluoride (YF ３ ), yttrium trichloride (YCl ３ ), ruthenium trichloride (RuCl ３ ), ruthenium trifluoride (RuF ３ ), hafnium tetrachloride (HfCl ４ ), hafnium tetrafluoride (HfF ４ ), zirconium tetrachloride (ZrCl ４ ), zirconium tetrafluoride (ZrF ４ ), aluminum trichloride (AlCl ３), aluminum trifluoride (AlF ３ ), dichlorosilane (SiH ２ Cl ２ ), 1,2-dichlorodisilane (Si ２ H ４ Cl ２ ), 1,1,1-trichlorodisilane (Si ２ H ３ Cl ３ ), 1,1,2-trichlorodisilane (Si ２ H ３ Cl ３ ), pentachlorodisilane (Si ２ HCl ５ ), hexachlorodisilane (Si ２ Cl ６ ), tetrafluorosilane (SiF ４ ) can be used. Furthermore, the gas containing the predetermined element can be, for example, monosilane (SiH ４ ), disilane (Si ２ H ６ ), trisilane (Si ３ H ８ ), tetrasilane (Si ４ H １０ As the predetermined element-containing gas, one or more of these can be used.

[0094] As the predetermined element-containing gas, for example, an organic predetermined element-containing gas having a predetermined element and an organic ligand can be used. As the organic predetermined element-containing gas, for example, hexadimethylaminoditungsten (W ２ [N(CH ３ ) ２ ] ６ ), bis(tertiarybutylimide)bis(dimethylamido)tungsten ((t-C ４ H ９ NH) ２ W = (Nt-C ４ H ９ ) ２ ), tetrakisethylmethylaminotitanium (Ti[N(C ２ H ５ ) (CH ３ )] ４), bisethylcyclopentadienyl ruthenium (Ru(EtCp) ２ ), biscyclopentadienyl ruthenium (Ru(Cp) ２ ), tetrakisethylmethylaminohafnium (Hf[N(Me)Et] ４ ), tetrakisdiethylaminohafnium (Hf[N(Et) ２ ] ４ ), tetrakisdimethylaminohafnium (Hf[N(Me) ２ ] ４ ), trisdimethylaminocyclopentadienyl hafnium ((Cp)Hf[N(Me) ２ ] ３ ), tetrakisethylmethylaminozirconium (Zr[N(Me)Cp] ４ ), tetrakisdiethylaminozirconium (Zr[N(Et) ２ ] ４ ), tetrakisdimethylaminozirconium (Zr[N(Me) ２ ] ４ ), tris(dimethylamino)cyclopentadienyl zirconium ((Cp)Zr[N(Me) ２ ] ３ ), trimethylaluminum (Al(CH ３ ) ３ ), trisdimethylaminosilane (Si[N(CH ３ ) ２ ] ３ As the predetermined element-containing gas, one or more of these can be used.

[0095] The reactive gas may be, for example, a gas containing a reducing gas, an oxidizing gas, a nitriding gas, a sulfide gas, a selenide gas, a telluride gas, or the like. One or more of these may be used as the reactive gas. A gas excited by plasma or the like from these gases may also be used as the reactive gas. For example, when one of the first and second processing gases is a gas containing a predetermined element and the other is a reducing gas, a film composed of a single predetermined element can be formed on the substrate S. Furthermore, when one of the first and second processing gases is a gas containing a predetermined element and the other is an oxidizing gas, a nitriding gas, a sulfide gas, a selenide gas, or a telluride gas, a film of an oxide of the predetermined element, a nitride of the predetermined element, a sulfide of the predetermined element, a selenide of the predetermined element, or a telluride of the predetermined element can be formed on the wafer.

[0096] The reducing gas may be, for example, hydrogen (H ２ ) gas, deuterium (D ２ ) gas, borane (BH ３ ) gas, diborane (B ２ H ６ ) gas, carbon monoxide (CO) gas, ammonia (NH ３ ) gas, monosilane (SiH ４ ) gas, disilane (Si ２ H ６ ) gas, trisilane (Si ３ H ８ ) gas, monogermane (GeH ４ ) gas, digermane (Ge ２ H ６ ) and the like can be used. In addition, as the reactive gas, for example, an oxidizing gas containing oxygen (O) can be used. As the oxidizing gas, for example, oxygen (O ２ ), ozone (O ３ ), water vapor (H ２ O), H ２ and O ２ mixed gas, hydrogen peroxide (H ２ O ２ ), nitrous oxide (N ２ O), etc. As the nitriding gas, for example, ammonia (NH３ ) gas, diazene (N ２ H ２ ) gas, hydrazine (N ２ H ４ ) gas, N ３ H ８ The sulfur gas may be, for example, sulfane (H ２ S), disulfane (H ２ S ２ ), diammonium sulfide ((NH ４ ) ２ S), dimethyl sulfide ((CH ３ ) ２ As the sulfide gas, one or more of these can be used. As the selenide gas, for example, selenium (H ２ Se), diserane (H ２ Se ２ ), dimethylselenium ((CH ３ ) ２ A gas containing, for example, tellurium (H ) can be used. As the selenide gas, one or more of these can be used. As the telluride gas, for example, tellurium (H ) can be used. ２ Te), diterane (H ２ Te ２ ), dimethylselenium ((CH ３ ) ２ One or more of these gases can be used as the telluride gas.

[0097] Examples of inert gases include rare gases such as helium (He), argon (Ar), neon (Ne) gas, and xenon (Xe) gas, and nitrogen (N ２ ) etc. As the inert gas, one or more of these can be used.

[0098] Furthermore, in the above-described embodiment, the first process gas is flush-supplied using one tank 259. However, this embodiment is not limited to this. That is, the first process gas may be flush-supplied to the substrate S using multiple tanks. By using multiple tanks, while the first process gas is being stored in one tank, the first process gas can be flush-supplied from the other tank. This embodiment also provides the same effects as the above-described embodiment. Furthermore, this embodiment can further improve throughput. Furthermore, the first process gas may be flush-supplied to the substrate S at least partially from multiple tanks simultaneously. This embodiment also provides the same effects as the above-described embodiment. Furthermore, this embodiment can further facilitate increasing the flow rate of the first process gas in the process chamber 201. This facilitates improving step coverage.

[0099] Furthermore, when two or more tanks 259 are used for flush supply of the first process gas, the flush supply of the first process gas to the substrate S from the two or more tanks 259 may be performed at least partially simultaneously. This embodiment also provides the same effects as the above-described embodiment. Furthermore, this embodiment can further reduce the amount of first process gas supplied from each tank. This makes it easier to supply a sufficient amount of first process gas even when the predetermined amount X is set to a large value. Therefore, it becomes easier to further improve step coverage.

[0100] Although the first process gas supply system 250 is described above as including the tank 259, this embodiment is not limited to this. That is, the second process gas supply system 260 may include a tank, and the second process gas may be supplied in a flushing manner. Furthermore, each of the first process gas supply system 250 and the second process gas supply system 260 may include a tank, and the first process gas and the second process gas may be supplied in a flushing manner, respectively. This embodiment also provides the same effects as the above embodiment.

[0101] In the above-described embodiment, the supply step S412 is performed so that the amount of the first process gas remaining in the tank 259 at the end of the supply step S412 (when the valve 254 is closed) is equal to or greater than the predetermined amount X. However, the present disclosure is not limited to this. For example, the supply step S412 may be performed so that the amount of a gas containing the first process gas remaining in the tank 259 at the end of the supply step S412 (when the valve 254 is closed) is equal to or greater than the predetermined amount X. Here, the gas containing the first process gas may be, for example, a first process gas-containing gas obtained by mixing the first process gas with a gas other than the first process gas (e.g., N2 gas as an inert gas). Furthermore, the supply step S412 may be performed so that the amount of a gas other than the first process gas remaining in the tank 259 at the end of the supply step S412 (when the valve 254 is closed) is equal to or greater than the predetermined amount X. These embodiments also provide the same effects as the above-described embodiment.

[0102] In the above-described embodiment, a film is formed on the substrate S using the first process gas and the second process gas in the film formation process performed by the substrate processing apparatus, but the embodiment is not limited to this. That is, other types of gases may be used as the process gases used in the film processing step to form other types of thin films. Furthermore, the embodiment can be applied even when three or more types of process gases are used.

[0103] In addition, in the above-described embodiment, a film formation process is given as an example of the film processing step, but the present embodiment is not limited to this. That is, the present embodiment can also be applied to film formation processes other than the film formation processes given as examples in the above-described embodiment.

[0104] In the above-described embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied, for example, to a case where a film is formed using a single-wafer substrate processing apparatus that processes one or several substrates at a time. In the above-described embodiment, an example of forming a film using a substrate processing apparatus having a hot-wall processing furnace has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a cold-wall processing furnace. Even when using these substrate processing apparatuses, each process can be performed using the same process procedures and process conditions as in the above-described embodiment and modified examples, and the same effects as in the above-described embodiment and modified examples can be obtained.

[0105] The above-described embodiments and modifications may be used in combination as appropriate. The processing procedures and processing conditions in such a case may be the same as those of the above-described embodiments and modifications, for example.

[0106] S board 259 tank (storage section)

Claims

1. A substrate processing method comprising a supply step of supplying a processing gas to a substrate from a storage section in which the processing gas is stored, wherein, during the supply step, the amount of gas in the storage section at the end of the supply step is equal to or greater than a predetermined amount.

2. The substrate processing method according to claim 1, wherein in the supplying step, the amount of gas containing the processing gas in the storage portion at the end of the supplying step is set to be equal to or greater than a predetermined amount.

3. The substrate processing method according to claim 1, wherein the predetermined amount is set so that a decomposition rate of the processing gas in the space in which the substrate exists during the supplying step is equal to or lower than a predetermined decomposition rate.

4. The substrate processing method according to claim 1, wherein the predetermined amount is set so that the flow rate of the processing gas in the space in which the substrate exists during the supply step is equal to or greater than a predetermined flow rate.

5. The substrate processing method according to claim 1, wherein the predetermined amount is set so that the residence time of the processing gas in the space in which the substrate exists during the supplying step is equal to or shorter than a predetermined residence time.

6. The substrate processing method according to claim 1, wherein the predetermined amount is set so that the partial pressure of the processing gas in the space in which the substrate exists during the supplying step is equal to or greater than a predetermined partial pressure.

7. The substrate processing method according to claim 1, wherein the predetermined amount is set so that the temperature of the reservoir becomes equal to or higher than a predetermined temperature in the supplying step.

8. The substrate processing method according to claim 1, wherein the predetermined amount is set so that the processing gas present in the storage portion is not liquefied or solidified in the supplying step.

9. The substrate processing method according to claim 1, wherein in the supplying step, the processing gas is supplied to the substrate from a plurality of the storage portions.

10. The method of claim 9, wherein in said supplying step, the supply of said process gas to said substrate from two or more of said reservoirs occurs at least partially simultaneously.

11. The method of claim 1, wherein the amount of said process gas in said reservoir is controlled by pressure within said reservoir.

12. The substrate processing method according to claim 1, wherein the supplying step is terminated after it is detected that the amount of gas in the reservoir is equal to or greater than the predetermined amount.

13. A substrate processing method as described in claim 1, further comprising a pre-evaluation process of determining, using a predetermined method, the time from the start of the supply process to the time when the amount of the processing gas in the storage section reaches a predetermined amount, and the supply process is terminated before the time has elapsed from the start of the supply process or when the time has elapsed.

14. The substrate processing method according to claim 1, further comprising a storing step of storing the processing gas in the storage section, the storing step and the supplying step being repeated a predetermined number of times.

15. A substrate processing method as described in claim 14, wherein in the storage process, the flow rate of the processing gas supplied to the storage section and / or the time for which the processing gas is continuously supplied to the storage section are changed at least once among the multiple cycles depending on the amount of the processing gas in the storage section.

16. The substrate processing method of claim 15, wherein in the storage step, the flow rate of the processing gas supplied to the storage section is kept constant over a number of the cycles, and the time for which the processing gas is continuously supplied to the storage section is changed at least once among the number of the cycles.

17. The substrate processing method of claim 15, wherein in the storage step, the time for which the processing gas is continuously supplied to the storage section is kept constant over a number of the cycles, and the flow rate of the processing gas supplied to the storage section is changed at least once among the number of the cycles.

18. A method for manufacturing a semiconductor device, comprising a supply step of supplying a process gas to a substrate from a storage section in which the process gas is stored, wherein the amount of gas in the storage section at the end of the supply step is equal to or greater than a predetermined amount.

19. A substrate processing apparatus comprising: a processing chamber in which a substrate is placed; a storage section for storing a processing gas therein; a gas control section configured to be capable of controlling the supply of the processing gas from the storage section to the substrate; and a control section configured to be capable of controlling the gas control section so as to perform a supply process for supplying the processing gas from the storage section to the substrate, and a process for making the amount of gas in the storage section at the end of the supply process equal to or greater than a predetermined amount.

20. A program for causing a substrate processing apparatus to be executed by a computer, the program having a supply procedure for supplying a processing gas to a substrate from a storage section in which the processing gas is stored, the supply procedure including a procedure for making the amount of gas in the storage section at the end of the supply procedure equal to or greater than a predetermined amount.

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