Substrate processing method and substrate processing apparatus

Abstract

The present invention reduces events in which a solute contained in a processing liquid for forming a holding layer for taking in foreign matter on the upper surface of a substrate reaches the substrate separately from a processing liquid supplied to the substrate. This substrate processing method comprises a first step, a second step, and a third step. The first step includes: a step for supplying a processing liquid for forming a holding layer by solidification or curing to a first upper surface which is the upper surface of a first substrate; a step for rotating the first substrate to scatter some of the processing liquid supplied to the first upper surface outward from the first upper surface; and a step for forming a holding layer on the first upper surface by solidification or curing of the processing liquid left on the first upper surface. In the second step, the holding layer on the first upper surface is removed. The third step includes: a step for supplying a cleaning liquid for cleaning a guard surface to a second upper surface which is the upper surface of a second substrate; and a step for rotating the second substrate to scatter the cleaning liquid from the second upper surface to the guard surface.

Description

Substrate processing method and substrate processing apparatus

[0001] Both the method and apparatus disclosed herein relate to techniques for processing substrates, such as semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPDs) used in organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells.

[0002] In order to appropriately perform various processes on a substrate, the substrate is cleaned before the process. Examples of the cleaning include removing chemicals used in other processes performed before the process, removing organic residues that are the target of removal by the chemicals, and removing foreign matter commonly known as particles.

[0003] As patterns formed on substrates become finer and more complex, the lower limit of particles to be removed becomes smaller. As a method for removing such minute particles, a method has been proposed in which a layer for retaining particles (hereinafter tentatively referred to as a "retention layer") is first formed on the upper surface of the substrate, and then the retention layer is peeled off together with the particles.

[0004] For example, Patent Document 1 exemplifies a process of forming a treatment film having a function similar to that of a retention layer, peeling off the treatment film, and further removing residue. For example, the treatment film is formed by supplying a treatment liquid to a substrate while rotating the substrate, spreading the treatment liquid on the substrate by centrifugal force to form a liquid film, and solidifying or curing the liquid film on the substrate. The treatment film is peeled off from the substrate by a stripping liquid. Any residue of the treatment film remaining on the substrate after the treatment film has been removed by the stripping liquid is dissolved and removed by an organic solvent.

[0005] Patent Document 1 discloses a first guard and a second guard that receive liquid splashed outward from the substrate. These guards move up and down separately between their upper and lower positions. The first guard surrounds a spin base that rotates the substrate, and is surrounded by the second guard. Patent Document 1 does not specify the positions of these guards when a processing liquid, a stripping liquid, or an organic solvent is supplied to the substrate.

[0006] Patent Document 2 was disclosed as a prior art document in Patent Document 1. Patent Document 2 discloses a particle retention layer having a function similar to that of a retention layer. The particle retention layer is formed on the upper surface of a substrate by solidifying or curing a processing liquid. The particle retention layer is stripped using a stripping liquid, and residues remaining on the substrate after the particle retention layer is removed are removed by residue removal.

[0007] Patent Document 2 also discloses a first guard and a second guard similar to those in Patent Document 1. When a processing liquid, a stripping liquid, or a residue removal liquid is supplied to a substrate, each of these guards is positioned in its respective upper position. In this position, the processing liquid, stripping liquid, and residue removal liquid splashing outward from the substrate are all caught by the first guard.

[0008] Patent Document 3 discloses a technique described in a modified embodiment.

[0009] JP 2021-153139 A JP 2019-62171 A JP 2015-35474 A

[0010] In Patent Document 2, the first guard is moved to the lower position, and gas is supplied to the substrate to perform spin drying. The residue removal liquid may be received by the second guard during spin drying.

[0011] However, because the processing liquid, stripping liquid, and residue removal liquid are all received by the first guard, solutes contained in the processing liquid or remaining on the particle retention layer adhere to the first guard. It is assumed that the process of removing particles using the particle retention layer (hereinafter also tentatively referred to as the "particle removal process") will be performed multiple times. It is assumed that the solutes that adhered to the first guard in a preceding particle removal process will peel off and reach the substrate when the processing liquid is supplied to the substrate in a subsequent particle removal process.

[0012] This phenomenon raises concerns that the processing film described in Patent Document 1 and the particle retention layer described in Patent Document 2 may reduce the ability to remove particles from the substrate. For example, if a processing liquid is supplied to a substrate to which solutes that have peeled off from the first guard are attached, it is thought that there is an increased possibility that adhesion between the retention layer formed from the processing liquid and the substrate will be impaired.

[0013] One possible reason for this increased likelihood is that the processing solution supplied to the substrate contains not only solutes originally dissolved in the processing solution (hereinafter also tentatively referred to as "dissolved solutes"; however, this specification also includes dispersed solutes), but also solutes that have peeled off the first guard and adhered to the substrate (hereinafter also tentatively referred to as "release solutes"), which solidify or harden to form a retention layer. Because the release solutes were not dissolved or dispersed in the processing solution, they have larger particle sizes than the dissolved solutes. Therefore, a retention layer obtained from a processing solution containing not only dissolved solutes but also release solutes has poorer flatness, particularly on the side that contacts the substrate, compared to a retention layer obtained without release solutes. Poor flatness of the retention layer on the side that contacts the substrate also leads to poor adhesion between the retention layer and the substrate, which likely impairs the retention layer's ability to retain and remove particles on the substrate.

[0014] Although Patent Document 2 exemplifies heating of the processing liquid, and Patent Document 1 exemplifies a case where heating of the processing liquid is not necessary, it is presumed that the above phenomenon occurs regardless of whether the processing liquid is heated or not.

[0015] The technology disclosed herein has been developed in consideration of the anticipated occurrence of the above-mentioned phenomenon, and aims to reduce the occurrence of solutes contained in the processing liquid for forming the retention layer reaching the substrate separately from the processing liquid supplied to the substrate.

[0016] The substrate processing method disclosed herein is a method for forming a retention layer on the top surface of the substrate to capture foreign matter, and performing a process to remove the foreign matter together with the retention layer, in a substrate processing apparatus that includes a rotation device that rotates a substrate having an upper surface around a vertical rotation axis, and a first guard that surrounds the rotation device when viewed along the rotation axis and has a surface facing the rotation device.

[0017] A first aspect of a substrate processing method according to the present disclosure includes a first step, a second step, and a third step. The first step includes: supplying a processing liquid containing a solute and a solvent, which forms the retention layer upon solidification or hardening, to a first upper surface that is the upper surface of a first substrate; rotating the first substrate to cause a portion of the processing liquid supplied to the first upper surface to scatter outward from the first upper surface; and forming the retention layer on the first upper surface by solidifying or hardening the processing liquid remaining on the first upper surface. The second step is removing the retention layer from the first upper surface. The third step includes: supplying a cleaning liquid for cleaning the surface to a second upper surface that is the upper surface of a second substrate; and rotating the second substrate to cause the cleaning liquid to scatter from the second upper surface onto the surface.

[0018] A second aspect of the substrate processing method according to the present disclosure is the first aspect, wherein the substrate processing apparatus further includes a second guard surrounding the first guard when viewed along the rotation axis. The first guard can be positioned either at an upper position or a lower position below the upper position. When the first guard is positioned at the upper position, the first guard is located between the holding position where the rotation device holds the substrate and the second guard when viewed along a direction perpendicular to the rotation axis from the holding position. When the first guard is positioned at the lower position, the first guard is not located between the holding position and the second guard when viewed along the direction. When the first step is performed, the first guard is located at the upper position. When the second step is performed, the first guard is located at the lower position. When the third step is performed, the first guard is located at the upper position.

[0019] A third aspect of the substrate processing method according to the present disclosure is the first or second aspect, in which the third step is performed after the first step and the second step, and the second substrate is the first substrate.

[0020] A fourth aspect of the substrate processing method according to the present disclosure is the first or second aspect, in which the third step is performed before the first step and the second step, and the second substrate is different from the first substrate.

[0021] A fifth aspect of the substrate processing method according to the present disclosure is any one of the first to fourth aspects, wherein the second step includes the steps of: removing the retention layer from the first upper surface using a remover; and removing residues on the first upper surface after the retention layer has been removed using a residue-removing liquid. The residue-removing liquid is used as the cleaning liquid.

[0022] A sixth aspect of the substrate processing method according to the present disclosure is any one of the first to fifth aspects, wherein in the third step, the cleaning liquid on the second upper surface is dried when or after rotating the second substrate to splash the cleaning liquid from the second upper surface onto the surface.

[0023] The substrate processing apparatus according to the present disclosure includes a rotation device that rotates a substrate having an upper surface around a vertical rotation axis, a first guard that surrounds the rotation device when viewed along the rotation axis and has a surface facing the rotation device, a second guard that surrounds the first guard when viewed along the rotation axis, a processing liquid discharge nozzle that is disposed above the rotation device and discharges a processing liquid downward, a stripping liquid discharge nozzle that is disposed above the rotation device and discharges a stripping liquid downward, and a cleaning liquid discharge nozzle that is disposed above the rotation device and discharges a cleaning liquid downward.

[0024] The remover liquid removes a retention layer formed on the first upper surface, which is the upper surface of the first substrate. The retention layer is formed on the first upper surface by solidifying or curing the treatment liquid on the first upper surface, and captures foreign matter on the first upper surface. The treatment liquid includes a solute and a solvent.

[0025] In a first aspect of the substrate processing apparatus according to the present disclosure, when the processing liquid discharge nozzle discharges the processing liquid to supply it to the first upper surface and the rotation device rotates the first substrate at a speed at which the processing liquid splashes from the first upper surface, the first guard is located at an upper position. When the remover liquid discharge nozzle discharges the remover liquid to supply it to the first upper surface and the rotation device rotates the first substrate at a speed at which the remover liquid splashes from the first upper surface, the first guard is located at a lower position below the upper position. When the cleaning liquid discharge nozzle discharges the cleaning liquid to supply it to a second upper surface that is the upper surface of a second substrate and the rotation device rotates the second substrate at a speed at which the cleaning liquid splashes from the second upper surface, the first guard is located at the upper position.

[0026] When the first guard is located at the upper position, the first guard is located between the holding position where the rotation device holds the substrate and the second guard when viewed along a direction perpendicular to the rotation axis from the holding position. When the first guard is located at the lower position, the first guard is not located between the holding position and the second guard when viewed along the direction. The cleaning solution has a component that removes the solutes attached to the surface of the first guard facing the rotation device.

[0027] A second aspect of the substrate processing apparatus according to the present disclosure is the first aspect, further comprising a control device that controls the rotation of the substrate by the rotation device, the position of the first guard, the position of the second guard, the discharge of the processing liquid from the processing liquid discharge nozzle, the discharge of the stripping liquid from the stripping liquid discharge nozzle, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle.

[0028] A third aspect of the substrate processing apparatus according to the present disclosure is the first or second aspect, in which the second substrate is the first substrate.

[0029] A fourth aspect of the substrate processing apparatus according to the present disclosure is the first or second aspect, in which the second substrate and the first substrate are different.

[0030] A fifth aspect of the substrate processing apparatus according to the present disclosure is any of the first to fourth aspects, and further includes a residue removal liquid discharge nozzle that discharges a residue removal liquid downward to remove residue on the first upper surface after the retention layer formed on the first upper surface has been peeled off.

[0031] A sixth aspect of the substrate processing apparatus according to the present disclosure is the fifth aspect, wherein the residue removing liquid is used as the cleaning liquid, and the residue removing liquid discharge nozzle also serves as the cleaning liquid discharge nozzle.

[0032] Any of the first, third, and fourth aspects of the substrate processing method according to the present disclosure reduces the occurrence of solutes contained in the processing liquid for forming the retention layer reaching the substrate separately from the processing liquid supplied to the substrate.

[0033] According to the second aspect of the substrate processing method of the present disclosure, in the first step, contamination of the upper surface caused by adhesions to the second guard is suppressed, and a reduction in the ability of the retention layer to capture foreign matter is suppressed.

[0034] According to the fifth aspect of the substrate processing method of the present disclosure, there is no need to provide a nozzle for discharging a cleaning liquid separately from a nozzle for discharging a residue removal liquid, thereby reducing the cost of manufacturing the substrate processing apparatus.

[0035] A sixth aspect of the substrate processing method according to the present disclosure contributes to cleaning the upper surface.

[0036] Any of the first, third, and fourth aspects of the substrate processing apparatus according to the present disclosure reduces the occurrence of solutes contained in the processing liquid for forming the retention layer reaching the substrate separately from the processing liquid supplied to the substrate.

[0037] The second aspect of the substrate processing apparatus according to the present disclosure contributes to cooperation between rotation of the substrate, arrangement of the first guard and the second guard, discharge of the processing liquid, discharge of the stripping liquid, and discharge of the cleaning liquid.

[0038] According to the fifth aspect of the substrate processing method according to the present disclosure, the retention layer formed on the upper surface is peeled off, and then the residue on the upper surface is removed.

[0039] According to the sixth aspect of the substrate processing method of the present disclosure, there is no need to provide a nozzle for discharging a cleaning liquid separately from a nozzle for discharging a residue removal liquid, thereby reducing the cost of manufacturing the substrate processing apparatus.

[0040] 4 is a plan view schematically illustrating an example of the configuration of a substrate processing apparatus. It is a side view schematically illustrating the configuration of a chamber. It is a block diagram illustrating a main control system of a substrate processing apparatus. It is a flowchart illustrating a process of cleaning a substrate in a chamber. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG. 4. It is a cross-sectional view schematically illustrating the state inside a chamber for each process executed in the flowchart of FIG.

[0041] Hereinafter, each embodiment of the present disclosure will be described with reference to the accompanying drawings. The components described in each embodiment are merely examples, and the scope of the present disclosure is not intended to be limited to these examples. The drawings are merely schematic illustrations. In the drawings, the dimensions and number of each part may be exaggerated or simplified as necessary to facilitate understanding. In the drawings, parts having similar configurations and functions are assigned the same reference numerals, and duplicate explanations are appropriately omitted.

[0042] In this specification, expressions indicating relative or absolute positional relationships (e.g., "parallel," "orthogonal," "center") not only indicate the exact positional relationship, but also indicate a state including tolerances and a state in which the same level of functionality is obtained. Expressions indicating that two or more things are in an equal state (e.g., "identical," "equal," "homogeneous") not only indicate a state in which they are strictly equal quantitatively, but also indicate a state in which there is a tolerance or a difference that allows the same level of functionality to be obtained, unless otherwise specified.

[0043] Unless otherwise specified, expressions indicating a shape (such as "rectangular shape" or "cylindrical shape") not only represent a strict geometric shape, but also represent shapes that have, for example, irregularities or chamfers, within the scope of achieving the same effect.

[0044] The expressions "comprises," "includes," "has," "includes," or "has" of one element are not exclusive expressions that exclude the presence of other elements.

[0045] Unless otherwise specified, the expression "connected" includes a state in which two elements are in contact with each other, as well as a state in which two elements are separated by another element.

[0046] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 1. The substrate processing apparatus 1 is a single-wafer processing apparatus that processes substrates W, which are processing objects, one by one. For example, the substrates W are substantially disk-shaped semiconductor substrates.

[0047] The substrate W is not necessarily limited to a semiconductor substrate. For example, various substrates such as a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk can be used as the substrate W. The shape of the substrate is also not limited to a disk shape, and various shapes such as a rectangular plate shape can be used.

[0048] 1. Configuration of the substrate processing apparatus 1 The substrate processing apparatus 1 includes a load port 105, an indexer section 103, a processing section 102, a transfer section 104, a transport section 106, and a control device 107. The control device 107 comprehensively controls the operations of the constituent elements of the substrate processing apparatus 1 outside the control device 107.

[0049] The processing section 102 has a plurality of, for example, four towers 20. In a plan view, the four towers 20 are arranged around the transport section 106. Each tower 20 has a plurality of, for example, three chambers 2 stacked vertically in a plan view. The chambers 2 function as processing chambers for processing substrates W.

[0050] A plurality of, for example, four carriers C are loaded into the load port 105. As the carriers C, a front opening unified pod (FOUP) that stores substrates W in an enclosed space, a standard mechanical interface (SMIF) pod, or an open cassette (OC) that exposes substrates W to the outside air may be used.

[0051] The substrate processing apparatus 1 includes an indexer robot 109. The indexer robot 109 moves mainly along the direction in which the carriers C are lined up in the indexer section 103 (see arrow F1 in FIG. 1). The indexer robot 109 moves between the indexer section 103 and the transfer section 104 (see arrow F2 in FIG. 1). The indexer robot 109 has a function of holding substrates W. The indexer robot 109 transports substrates W between the carriers C in the indexer section 103.

[0052] The substrate processing apparatus 1 includes a transfer robot 108. The transfer robot 108 has a function of holding a substrate W. The transfer robot 108 moves between the delivery section 104 and the transfer section 106 (see arrow F3 in FIG. 1).

[0053] The transfer robot 108 transfers the substrate W between itself and the indexer robot 109 in the transfer section 104. The indexer robot 109 transfers the substrate W between itself and the transfer robot 108 in the transfer section 104.

[0054] The transfer robot 108 moves between the transfer section 106 and each of the chambers 2 (see arrow F4 in FIG. 1). The transfer robot 108 transfers substrates W to and from each of the chambers 2.

[0055] The transfer robot 108 receives the substrate W from the indexer robot 109 and transfers it into one of the chambers 2. The transfer robot 108 transfers the processed substrate W out of the chamber 2 and hands it over to the indexer robot 109.

[0056] 2 is a side view illustrating a schematic example of the configuration of the chamber 2. The chamber 2 includes a spin chuck 4, a processing solution discharge nozzle 5, a stripping solution discharge nozzle 6, a processing cup 40, an opposing member 50, a gas discharge nozzle 60, a rinse solution discharge nozzle 65, and a residue removal solution discharge nozzle 7.

[0057] The spin chuck 4 has the function of holding a substrate W to be processed in a horizontal position and the function of rotating it about a vertical rotation axis A1. The substrate W held by the spin chuck 4 rotates about the rotation axis A1 by the rotation of the spin chuck 4. For example, the substrate W is held horizontally by the spin chuck 4 with its center positioned on the rotation axis A1. The spin chuck 4 functions as a rotation device that rotates the substrate W to be processed about the rotation axis A1.

[0058] The spin chuck 4 includes a chuck pin 8, a spin base 9, a rotation shaft 10, and a spin motor 11. The spin motor 11 functions to rotate the rotation shaft 10 about a rotation axis A1. The rotation shaft 10 extends vertically along the rotation axis A1 and is, for example, a hollow shaft. The upper end of the rotation shaft 10 is connected to the center of the lower surface of the spin base 9.

[0059] The spin base 9 has a disk shape extending horizontally. A plurality of chuck pins 8 are arranged at intervals in the circumferential direction on the peripheral edge of the upper surface 9 a of the spin base 9. The chuck pins 8 grip the substrate W above the spin base 9 and release the grip of the substrate W.

[0060] The chuck pins 8 are fixed above the spin base 9 and function as ends of the spin chuck 4 that hold the substrate W above the spin base 9. The position 8a of the upper end of the chuck pins 8 can be considered an example of a holding position where the spin chuck 4 holds the substrate W.

[0061] The chuck pins 8 grip the substrate W, the spin motor 11 applies a rotational force to the rotation shaft 10, and the spin base 9 rotates, whereby the substrate W rotates about the rotation axis A1.

[0062] The processing liquid discharge nozzle 5 is disposed above the spin chuck 4. The processing liquid discharge nozzle 5 has a function of discharging the processing liquid downward. When the substrate W is held by the spin chuck 4 and the processing liquid discharge nozzle 5 is positioned opposite the substrate W as described below, this function allows the processing liquid discharge nozzle 5 to supply the processing liquid to the upper surface Wa of the substrate W. As will be described in detail later, the processing liquid contains a solute and a volatile solvent, and solidifies or hardens to form a retention layer.

[0063] The remover solution discharge nozzle 6 is disposed above the spin chuck 4. The remover solution discharge nozzle 6 has a function of discharging the remover solution downward. When the substrate W is held by the spin chuck 4 and the remover solution discharge nozzle 6 is positioned opposite the upper surface Wa of the substrate W as described later, the remover solution discharge nozzle 6 can be said to have a function of supplying the remover solution to the upper surface Wa by this function. The remover solution peels off the retention layer from the substrate W, as will be described in detail later.

[0064] The processing liquid discharge nozzle 5 is moved by a nozzle moving mechanism 12. The nozzle moving mechanism 12 moves the processing liquid discharge nozzle 5, for example, between a central position and a retracted position, in a horizontal direction, for example, a direction perpendicular to the rotation axis A1. The nozzle moving mechanism 12 is provided in, for example, the chamber 2.

[0065] The central position of the processing liquid discharge nozzle 5 coincides with the rotation axis A1 in a plan view, for example. When the processing liquid discharge nozzle 5 is at the central position and the substrate W is held by the spin chuck 4 and rotates, the processing liquid discharge nozzle 5 faces, for example, the center of rotation of the upper surface Wa.

[0066] The processing liquid discharge nozzle 5 at the retracted position does not face the upper surface Wa when the substrate W is held by the spin chuck 4. For example, the retracted position is located outside the spin base 9 in a plan view.

[0067] A processing liquid supply pipe 13 is connected to the processing liquid discharge nozzle 5. A valve 14 is provided to the processing liquid supply pipe 13. The processing liquid is supplied to the processing liquid supply pipe 13 from the opposite side of the valve 14 to the processing liquid discharge nozzle 5 by a mechanism (not shown). The valve 14 adjusts the flow rate of the processing liquid flowing through the processing liquid supply pipe 13, and typically opens and closes the flow path of the processing liquid supply pipe 13. The valve 14 is provided in, for example, the chamber 2.

[0068] The remover solution discharge nozzle 6 is moved by a nozzle moving mechanism 15. The nozzle moving mechanism 15 moves the remover solution discharge nozzle 6, for example, between a central position and a retracted position, in a horizontal direction, for example, a direction perpendicular to the rotation axis A1. The nozzle moving mechanism 15 is provided in, for example, the chamber 2.

[0069] The central position of the remover solution discharge nozzle 6 coincides with the rotation axis A1 in a plan view, for example. When the remover solution discharge nozzle 6 is at the central position and the substrate W is held by the spin chuck 4 and rotates, the remover solution discharge nozzle 6 faces, for example, the center of rotation of the upper surface Wa.

[0070] The remover solution discharge nozzle 6 in the retracted position does not face the upper surface Wa when the substrate W is held by the spin chuck 4. For example, the retracted position of the remover solution discharge nozzle 6 is outside the spin base 9 in a plan view and is different from the retracted position of the processing solution discharge nozzle 5.

[0071] A remover liquid supply pipe 16 is connected to the remover liquid discharge nozzle 6. A valve 17 is provided to the remover liquid supply pipe 16. The remover liquid is supplied to the remover liquid supply pipe 16 from the opposite side of the valve 17 to the remover liquid discharge nozzle 6 by a mechanism (not shown). The valve 17 adjusts the flow rate of the processing liquid flowing through the remover liquid supply pipe 16, and typically opens and closes the flow path of the remover liquid supply pipe 16. The valve 17 is provided in, for example, the chamber 2.

[0072] The processing cup 40 includes guards 41 and 42, cups 45 and 46, and an outer wall member 43. The guards 41 and 42 function to catch liquid splashed outward from the substrate W (more specifically, the upper surface Wa) held by the spin chuck 4. The cup 45 receives the liquid guided downward by the guard 41. The cup 46 receives the liquid guided downward by the guard 42. The liquid received by the cups 45 and 46 may be recovered, for example, by a known recovery mechanism (not shown) and reused. Such reuse contributes to reducing the amounts of the processing liquid, stripping liquid, and also the residue removal liquid and rinse liquid (described below). Such reduction in usage contributes to cost reduction.

[0073] The guard 41 surrounds the outside of the spin chuck 4 and has, for example, a cylindrical shape. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 42 surrounds the outside of the guard 41 and has, for example, a cylindrical shape. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1.

[0074] The cup 45 surrounds the outside of the spin chuck 4 on the side closer to the spin chuck 4 than the guard 41 and has a groove shape that opens upward. The cup 46 surrounds the outside of the guard 41 on the side opposite to the spin chuck 4 than the guard 41 and has a groove shape that opens upward below the guard 42. For example, the cups 45 and 46 are connected to the guard 41.

[0075] The guards 41, 42 are raised and lowered separately by a guard lifting mechanism 44. The guard lifting mechanism 44 raises and lowers the guard 41 between an upper position and a lower position that is lower than the upper position. The guard 41 can be positioned in either the upper position or the lower position. The guard lifting mechanism 44 raises and lowers the guard 42 between an upper position and a lower position that is lower than the upper position. The guard 42 can be positioned in either the upper position or the lower position. The guard lifting mechanism 44 is provided in, for example, the chamber 2.

[0076] When the guard 42 is in its lower position, the guard 41 is also in its lower position, and the upper ends of the guards 41 and 42 are lower than the holding position 8a. Setting the guards 41 and 42 in the lower position like this facilitates attachment and detachment of the substrate W to and from the spin chuck 4.

[0077] When the guard 42 is in its upper position, the guard 41 can be positioned at any position from the upper position to the lower position. For example, when the guards 41, 42 are in their upper positions and liquid splashes outward from the upper surface Wa of the substrate W held on the spin chuck 4, the splashed liquid is mainly received by the guard 41. For example, when the guard 42 is in its upper position and the guard 41 is in its lower position and liquid splashes outward from the upper surface Wa of the substrate W held on the spin chuck 4, the splashed liquid is mainly received by the guard 42.

[0078] The guard lifting mechanism 44 is realized, for example, using a ball screw mechanism attached to the guard 41 and a motor that provides driving force to the ball screw mechanism (neither of which are shown), and a ball screw mechanism attached to the guard 42 and a motor that provides driving force to the ball screw mechanism (neither of which are shown).

[0079] The outer wall member 43 surrounds the guards 41 and 42 and the cups 45 and 46 from the outside, and has, for example, a cylindrical shape.

[0080] The facing member 50 is provided above the spin chuck 4. The facing member 50 includes a facing surface 50a that faces the spin base 9, more specifically, the upper surface 9a. The facing surface 50a is positioned approximately horizontally. The facing surface 50a faces, for example, the substrate W held by the spin chuck 4, and has a disk shape with a diameter approximately the same as or larger than that of the substrate W.

[0081] A hollow shaft 51 is fixed to the opposing member 50 on the side opposite to the opposing surface 50a. A communication hole 50b is formed in the opposing member 50. The communication hole 50b passes through the opposing member 50 from top to bottom and communicates with the internal space of the hollow shaft 51. For example, in a plan view, the communication hole 50b and the hollow shaft 51 overlap with the rotation axis A1.

[0082] The facing member 50 is raised and lowered by a facing member lifting mechanism 52. The facing member lifting mechanism 52 has a function of disposing the facing member 50 at any position (height) between the upper position and the lower position. The facing member lifting mechanism 52 is provided in the chamber 2, for example.

[0083] The lower position of the opposing member 50 is the position where the opposing surface 50 a is closest to the upper surface 9 a within the movable range of the opposing member 50. When the opposing member 50 is in the lower position and the substrate W is held by the spin chuck 4, the opposing surface 50 a is higher than the upper surface Wa.

[0084] The upper position of the opposing member 50 is the position where the opposing surface 50 a is farthest from the upper surface 9 a within the movable range of the opposing member 50. The upper position of the opposing member 50 can also be considered as a retracted position of the opposing member 50. When the opposing member 50 is in the upper position and the substrate W is held by the spin chuck 4, the distance between the opposing surface 50 a and the upper surface Wa allows both the processing solution discharge nozzle 5 and the stripping solution discharge nozzle 6 to move horizontally above the upper surface Wa.

[0085] The opposing member lifting mechanism 52 is realized, for example, using a support member (not shown) that supports the hollow shaft 51, a ball screw mechanism (not shown) attached to the support member, and an electric motor (not shown) that provides driving force to the ball screw mechanism.

[0086] The residue removing solution discharge nozzle 7, the gas discharge nozzle 60, and the rinse solution discharge nozzle 65 are all disposed above the spin chuck 4. Specifically, the residue removing solution discharge nozzle 7, the gas discharge nozzle 60, and the rinse solution discharge nozzle 65 are all housed in a nozzle housing member 53. The nozzle housing member 53 is inserted into the hollow shaft 51.

[0087] The respective outlets of the residue removing solution discharge nozzle 7, the gas discharge nozzle 60, and the rinse solution discharge nozzle 65 are exposed downward from the lower end of the nozzle housing member 53. The lower end of the nozzle housing member 53 faces the center of the upper surface 9a in a plan view. For example, when the substrate W is held on the spin chuck 4, the respective outlets of the residue removing solution discharge nozzle 7, the gas discharge nozzle 60, and the rinse solution discharge nozzle 65 face approximately the center of the upper surface Wa.

[0088] The residue removing solution discharge nozzle 7 has a function of discharging the residue removing solution downward. When the substrate W is held by the spin chuck 4, this function enables the residue removing solution discharge nozzle 7 to supply the residue removing solution to the upper surface Wa of the substrate W. As will be described in detail later, the residue removing solution removes residues on the upper surface Wa after the retention layer has been peeled off.

[0089] The gas discharge nozzle 60 has a function of discharging gas downward. When the substrate W is held by the spin chuck 4, this function enables the gas discharge nozzle 60 to supply gas to the upper surface Wa of the substrate W. As will be described in detail later, the gas is used to solidify or harden the processing liquid, or to dry the upper surface Wa after residues have been removed.

[0090] The rinse liquid discharge nozzle 65 has a function of discharging the rinse liquid downward. When the substrate W is held by the spin chuck 4, this function enables the rinse liquid discharge nozzle 65 to supply the rinse liquid to the upper surface Wa of the substrate W. As will be described in detail later, the rinse liquid is used to clean the upper surface Wa after the retention layer has been peeled off and before residues on the upper surface Wa are removed.

[0091] A residue removing liquid supply pipe 22 is connected to the residue removing liquid discharge nozzle 7. A valve 23 is provided to the residue removing liquid supply pipe 22. The residue removing liquid is supplied to the residue removing liquid supply pipe 22 from the opposite side of the valve 23 to the residue removing liquid discharge nozzle 7 by a mechanism (not shown). The valve 23 adjusts the flow rate of the residue removing liquid flowing through the residue removing liquid discharge nozzle 7, and typically opens and closes the flow path of the residue removing liquid supply pipe 22. The valve 23 is provided in the chamber 2, for example.

[0092] A gas supply pipe 61 is connected to the gas discharge nozzle 60. A valve 62 is provided to the gas supply pipe 61. Gas is supplied to the gas supply pipe 61 from the opposite side of the valve 62 to the gas discharge nozzle 60 by a mechanism (not shown). The valve 62 adjusts the flow rate of the gas flowing through the gas discharge nozzle 60, and typically opens and closes the flow path of the gas supply pipe 61. The valve 62 is provided in the chamber 2, for example.

[0093] A rinse liquid supply pipe 66 is connected to the rinse liquid discharge nozzle 65. A valve 67 is provided to the rinse liquid supply pipe 66. The rinse liquid is supplied to the rinse liquid supply pipe 66 from the opposite side of the valve 67 to the rinse liquid discharge nozzle 65 by a mechanism (not shown). The valve 67 adjusts the flow rate of the rinse liquid flowing through the rinse liquid discharge nozzle 65, and typically opens and closes the flow path of the rinse liquid supply pipe 66. The valve 67 is provided in, for example, the chamber 2.

[0094] 3 is a block diagram illustrating a main control system of the substrate processing apparatus 1. The control device 107 includes a processor 3A and a memory 3B. The memory 3B stores a control program. The control program is executed by the processor 3A to control the operation of the substrate processing apparatus 1. For example, the processor 3A and the memory 3B are realized by a microcomputer.

[0095] The processor 3A is composed of, for example, one or more central processing units (CPUs). The memory 3B is composed of, for example, a volatile storage medium such as a random access memory (RAM) and a non-volatile storage medium such as a hard disk drive (HDD) or a solid state drive (SSD). The non-volatile storage medium can store various types of information in addition to the above-mentioned control program. When the processor 3A executes the control program, the RAM is used, for example, as a workspace and stores temporarily generated or acquired information. At least some of the functions implemented by the control device 107 may be implemented by hardware such as a dedicated electronic circuit.

[0096] In the main control system of the substrate processing apparatus 1, the control device 107 controls the spin motor 11, the nozzle moving mechanisms 12 and 15, the opposing member lifting mechanism 52, the guard lifting mechanism 44, and the valves 14, 17, 23, 62, and 67. Such control is represented by solid arrows in FIG.

[0097] The spin base 9 is driven to rotate by a spin motor 11. The processing solution discharge nozzle 5 is moved by a nozzle moving mechanism 12. The stripping solution discharge nozzle 6 is moved by a nozzle moving mechanism 15. The opposing member 50 is raised and lowered by an opposing member lifting mechanism 52. The guards 41 and 42 are raised and lowered by a guard lifting mechanism 44. The mechanical connections between these components are represented by dashed arrows in FIGS. 1 and 3.

[0098] The control device 107 may not be provided in the substrate processing apparatus 1 but may be provided outside the substrate processing apparatus 1. The processor 3A may be provided in the substrate processing apparatus 1 and the memory 3B may be provided outside the substrate processing apparatus 1. The memory 3B may be provided in the substrate processing apparatus 1 and the processor 3A may be provided outside the substrate processing apparatus 1. It is clear that the control system illustrated in Fig. 3 can be realized in these cases as well.

[0099] 4 is a flowchart illustrating a process for cleaning the substrate W in the chamber 2. Specifically, Fig. 4 illustrates a process for removing particles (foreign matter) on the upper surface Wa, and the flowchart is titled "Particle Removal Process." When the particle removal process starts, the substrate W to be cleaned is already held by the spin chuck 4.

[0100] 5 to 13 are cross-sectional views that schematically illustrate the conditions inside the chamber 2 for each step executed in the flowchart.

[0101] The particle removal process is broadly divided into three steps S10, S20, and S30, which are performed in this order. Step S10 is a step of forming a retention layer on the upper surface Wa. Step S20 is a step of removing the retention layer together with the particles. Step S30 is a step of removing solutes adhering to the guard 42.

[0102] <4-1. Formation of Retention Layer> Step S10 includes steps S11, S12, and S13, which are performed in this order. Step S11 is a step of supplying a treatment liquid to the upper surface Wa. Step S12 is a step commonly known as spin-off, in which a portion of the treatment liquid is scattered outward from the upper surface Wa, leaving an appropriate amount of treatment liquid on the upper surface Wa. Step S13 is a step of forming a retention layer by solidifying or curing the treatment liquid (denoted as "solidification / curing" in FIG. 4).

[0103] 5 is a schematic diagram illustrating the state inside the chamber 2 when step S11 is performed. When step S11 is performed, the guard lifting mechanism 44 positions both guards 41 and 42 at their respective upper positions U1 and U2 (both guards 41 and 42 are located at their respective upper positions U1 and U2). In FIGS. 5 to 13, the upper position U1 of the guard 41 is shown as the vertical position of the upper end of the guard 41. In FIGS. 5 to 13, the upper position U2 of the guard 42 is shown as the vertical position of the upper end of the guard 42.

[0104] 5 illustrates an example in which the upper portions of both the guards 41 and 42 are bent toward the spin chuck 4, but such bending is not necessarily required. For example, when the guard 42 has a cylindrical shape that maintains its diameter in the vertical direction, it is not necessarily required that the upper position U2 be higher than the upper position U1.

[0105] When step S11 at the upper end of the guard 41 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 10 rpm to several tens of rpm. When step S11 is performed, the opposing member lifting mechanism 52 places the opposing member 50 at its upper position U5 (the opposing member 50 is located at the upper position U5). In Figures 5 to 13, the upper position U5 of the opposing member 50 is shown as the position of the opposing surface 50a in the vertical direction.

[0106] After the opposing member 50 is positioned at its upper position U5, the nozzle moving mechanism 12 positions the processing liquid discharge nozzle 5 at its central position (the processing liquid discharge nozzle 5 is positioned at its central position). With the substrate W rotating at the above-mentioned speed, the valve 14 opens, and the processing liquid 27 is discharged from the processing liquid discharge nozzle 5 and supplied to the upper surface Wa. The processing liquid 27 supplied to the upper surface Wa is spread over substantially the entire surface of the upper surface Wa by centrifugal force.

[0107] After the processing liquid 27 has been supplied to the upper surface Wa for a predetermined time, the valve 14 is closed and step S11 is completed. After step S11 is completed, step S12 is executed.

[0108] 6 schematically illustrates the situation inside the chamber 2 when step S12 is performed. Even when step S12 is performed, both guards 41 and 42 remain at their respective upper positions U1 and U2. When step S12 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 300 rpm to 1500 rpm. Rotation at this speed causes the processing liquid 27 to splash from the upper surface Wa. Even when step S12 is performed, the opposing member 50 remains at its upper position U5. When step S12 is performed, the nozzle moving mechanism 12 moves the processing liquid discharge nozzle 5 to its retracted position (the processing liquid discharge nozzle 5 is positioned at its retracted position: not shown).

[0109] By adjusting the amount of processing liquid 27 supplied in step S11 and the speed and time at which the substrate W rotates in step S12, an appropriate amount of processing liquid 27 for forming a retention layer 29 is left on the upper surface Wa, while excess processing liquid 27 is splashed outward from the periphery of the upper surface Wa and removed.

[0110] When viewed from the position 8a of the upper end of the chuck pin 8 in the horizontal direction (which is also the direction perpendicular to the vertical rotation axis A1), the guard 41 located at the upper position U1 is located between the position 8a and the guard 42. The processing liquid 27 splashed from the upper surface Wa is received by the guard 41, specifically, by the surface 41a of the guard 41 facing the spin chuck 4, thereby preventing the processing liquid 27 from adhering to the guard 42. At this time, volatile components contained in the processing liquid 27, such as the solvent, may volatilize.

[0111] In step S12, the substrate W is rotated and a predetermined time has elapsed, and then step S12 is completed. After step S12 is completed, step S13 is executed.

[0112] 7 schematically illustrates the situation inside the chamber 2 when step S13 is performed. Even when step S13 is performed, both guards 41 and 42 remain in their respective upper positions U1 and U2. When step S13 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. When step S13 is performed, the opposing member 50 is in its lower position D5. In FIGS. 5 to 13, the lower position D5 of the opposing member 50 is shown as the vertical position of the opposing surface 50a.

[0113] In step S13, the valve 62 opens, and gas is discharged from the gas discharge nozzle 60 and supplied between the opposing surface 50a and the upper surface Wa. Nitrogen gas, for example, is used as the gas. In step S13, the volatilization of the volatile components, such as the solvent, progresses, and the processing liquid 27 solidifies or hardens. This solidification or hardening forms a solid retention layer 29 on the upper surface Wa, the main component of which is solute. When the retention layer 29 is formed, particles (not shown) that had been adhering to the upper surface Wa are separated from the upper surface Wa and are retained in the retention layer 29.

[0114] Here, "solidification" refers to the solidification of a solute due to forces acting between molecules or atoms, for example, as the solvent evaporates. "Hardening" refers to the solidification of a solute due to chemical changes such as polymerization or crosslinking. Therefore, "solidification or hardening" refers to the "solidification" of a solute due to various factors. Note that the processing liquid 27 only needs to be solidified or hardened to an extent that it can hold particles, and the solvent does not need to be completely volatilized.

[0115] The solute and solvent contained in the treatment liquid 27 may be various substances, taking into consideration the material of the substrate W. For example, Patent Document 2 lists examples of solutes, such as acrylic resin, phenolic resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, and polyamide imide. The solute in this embodiment may be selected from these examples. The solute may be an organic compound other than a resin, or a mixture of an organic compound with another compound. Alternatively, the solute may be a compound other than an organic compound.

[0116] After a predetermined time has elapsed since the gas supply in step S13 (specifically, since the valve 62 was opened), the gas supply is stopped (specifically, the valve 62 is closed), and step S13 is completed. After step S13 is completed, step S20 is executed.

[0117] <4-2. Removal of retention layer 29> Step S20 includes steps S21, S22, S23, and S24, which are performed in this order. Step S21 is a step of removing the retention layer 29 using a remover. Step S22 is a step of rinsing the remover and the removed retention layer 29 from the upper surface Wa. Step S23 is a step of removing residue remaining on the upper surface Wa by step S22. Step S24 is a step of performing spin drying.

[0118] 8 is a schematic diagram illustrating the state inside the chamber 2 when step S21 is performed. When step S21 is performed, the guard 41 is positioned at its lower position D1 by the guard lifting mechanism 44, while the guard 42 is positioned at its upper position U2. The lower position D1 is lower than the upper position U1. In FIGS. 5 to 13, the lower position D1 of the guard 41 is shown as the vertical position of the upper end of the guard 41.

[0119] When step S21 is performed, the spin motor 11 rotates the spin base 9, and therefore the substrate W. The rotation speed is, for example, 500 rpm to 800 rpm. When step S21 is performed, the opposing member lifting mechanism 52 places the opposing member 50 at its upper position U5 (the opposing member 50 is located at the upper position U5).

[0120] After the opposing member 50 is positioned at its upper position U5, the nozzle moving mechanism 15 positions the remover solution discharge nozzle 6 at its central position (the remover solution discharge nozzle 6 is positioned at its central position). While the substrate W is rotating at the above-mentioned speed, the valve 17 opens, and the remover solution 32 is discharged from the remover solution discharge nozzle 6 and supplied to the retention layer 29. The remover solution 32 supplied to the retention layer 29 spreads over substantially the entire upper surface of the retention layer 29 due to the action of centrifugal force. The retention layer 29 is stripped from its upper surface Wa by the supply of the remover solution 32. Rotation at the above-mentioned speed (e.g., 500 rpm to 800 rpm) causes the remover solution 32 to splash from the upper surface Wa. The removed retention layer 29 splashes outward from the periphery of the upper surface Wa together with the remover solution 32.

[0121] When viewed horizontally from the position 8a of the upper end of the chuck pin 8, the guard 41 located at the lower position D1 is not located between the position 8a and the guard 42. The retention layer 29 and the stripping solution 32 scattered from the upper surface Wa pass over the guard 41 and are received by the guard 42. The solute contained in the retention layer 29, more specifically, the processing solution 27, is prevented from adhering to the surface 41a of the guard 41.

[0122] The remover 32 is compatible with the solvent, and the solute is poorly soluble or insoluble in the remover 32. The remover 32 penetrates into the retention layer 29 by interacting with the solvent remaining in the retention layer 29, and reaches the upper surface Wa. The remover 32 does not easily dissolve the solute, which is the main component of the retention layer 29. Particles taken into the retention layer 29 are peeled off from the upper surface Wa together with the retention layer 29, and are removed from the upper surface Wa.

[0123] Taking into consideration the solute and solvent, various substances can be used for the stripper 32. For example, Patent Document 2 discloses an example in which PGEE (propylene glycol monoethyl ether) is used as the solvent for the stripper 32, and SC1 (a mixed acid containing ammonium hydroxide and hydrogen peroxide) is used as the stripper 32 according to the present embodiment, as well as many other examples.

[0124] After a predetermined time has elapsed since the supply of the stripping liquid 32 was started in step S21 (specifically, since the valve 17 was opened), the supply of the stripping liquid 32 is stopped (specifically, the valve 17 is closed), and step S21 is completed. After step S21 is completed, step S22 is executed.

[0125] FIG. 9 schematically illustrates the situation inside the chamber 2 when step S22 is performed. When step S22 is performed, the guard 42 remains in its upper position U2, and the guard 41 remains in its lower position D1. When step S22 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. When step S22 is performed, the nozzle moving mechanism 15 positions the stripping solution discharge nozzle 6 at its retracted position (the stripping solution discharge nozzle 6 is in the retracted position; not shown). After the stripping solution discharge nozzle 6 is in the retracted position, the opposing member lifting mechanism 52 lowers the opposing member 50 to the middle position M5. The middle position M5 of the opposing member 50 is lower than the upper position U5 of the opposing member 50 and higher than the lower position D5 of the opposing member 50. In FIGS. 5 to 13, the middle position M5 is indicated as a vertical position of the opposing surface 50a.

[0126] In step S22, after the stripping liquid discharge nozzle 6 is positioned at its retracted position, the valve 67 opens while the substrate W is rotating at the above-mentioned speed, and the rinse liquid 31 is discharged from the rinse liquid discharge nozzle 65 and supplied to the upper surface Wa.

[0127] The discharge of the rinsing liquid 31 from the rinsing liquid discharge nozzle 65 is started, for example, when the opposing member 50 is in the middle position M5. Alternatively, the discharge may be started when the opposing member 50 is in the upper position U5, or may be started while the opposing member 50 is moving from the upper position U5 to the middle position M5.

[0128] The rinse liquid 31 supplied to the upper surface Wa spreads over substantially the entire surface of the upper surface Wa due to the action of centrifugal force and is then scattered outward from the periphery of the upper surface Wa. The rinse liquid 31 washes away the stripping liquid 32 remaining on the upper surface Wa, and furthermore, the retention layer 29 remaining on the upper surface Wa after being stripped. The scattered rinse liquid 31, stripping liquid 32, and / or retention layer 29 are received by the guard 42. The solutes contained in the retention layer 29, more specifically, the processing liquid 27, are prevented from adhering to the surface 41 a of the guard 41.

[0129] Examples of the rinse liquid 31 include DIW, carbonated water, electrolytic ionized water, hydrogen water, ozone water, and diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm).

[0130] After a predetermined time has elapsed since the supply of the rinse liquid 31 was started in step S22 (specifically, since the valve 67 was opened), the supply of the rinse liquid 31 is stopped (specifically, the valve 67 is closed), and step S21 is completed. After step S21 is completed, step S23 is executed.

[0131] 10 schematically illustrates the situation inside the chamber 2 when step S23 is performed. When step S23 is performed, the guard 42 remains in its upper position U2, and the guard 41 remains in its lower position D1. When step S23 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, several tens of rpm to 300 rpm. When step S23 is performed, the opposing member 50 remains in the middle position M5.

[0132] In step S23, while the substrate W is rotating at the above-mentioned speed, the valve 23 is opened, and the residue removing liquid 33 is discharged from the residue removing liquid discharge nozzle 7 and supplied to the upper surface Wa. The residue removing liquid 33 supplied to the upper surface Wa is spread over substantially the entire surface of the upper surface Wa by centrifugal force. The rinse liquid 31 remaining on the upper surface Wa is replaced with the residue removing liquid 33. The residue removing liquid 33 dissolves the residue of the retention layer 29 remaining on the upper surface Wa. Rotation at the above-mentioned speed (e.g., 500 rpm to 800 rpm) causes the stripping liquid 32 to splash outward from the periphery of the upper surface Wa. The splashed residue removing liquid 33 and residue are received by the guard 42. Solutes contained in the retention layer 29, more specifically, the processing liquid 27, are prevented from adhering to the surface 41a of the guard 41.

[0133] A solvent capable of dissolving the solute is used for the residue removal liquid 33. For example, Patent Document 2 lists thinner, toluene, acetate esters, alcohols, and glycols as examples of solvents that correspond to the residue removal liquid 33 of this embodiment. From these examples, the residue removal liquid 33 of this embodiment can be selected. For example, IPA (isopropyl alcohol) is used for the residue removal liquid 33. For example, PGME (propylene glycol methyl ether acetate) is used for the residue removal liquid 33.

[0134] The use of IPA as the residue removal liquid 33 is advantageous not only in terms of solubility but also in terms of volatility, which allows it to easily replace the rinse liquid 31 when DIW is used as the rinse liquid 31, and makes it easier to spin-dry in the subsequent step S24.

[0135] After a predetermined time has elapsed since the supply of the residue removing solution 33 was started in step S23 (specifically, since the valve 23 was opened), the supply of the residue removing solution 33 is stopped (specifically, the valve 23 is closed), and step S23 is completed. After step S23 is completed, step S24 is executed.

[0136] 11 schematically illustrates the situation inside the chamber 2 when step S24 is performed. Even when step S24 is performed, the guard 42 remains in its upper position U2, and the guard 41 remains in its lower position D1. When step S24 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 500 rpm to 1500 rpm. When step S24 is performed, the opposing member lifting mechanism 52 positions the opposing member 50 at its lower position D5 (the opposing member 50 is in the lower position D5).

[0137] In step S24, the valve 62 is opened, and gas is discharged from the gas discharge nozzle 60 and supplied between the facing surface 50a and the upper surface Wa. As the substrate W rotates, centrifugal force acts on the residue removing liquid 33, and the residue removing liquid 33 is discharged from the periphery of the upper surface Wa of the substrate W. The supply of gas promotes volatilization of the residue removing liquid 33. In step S24, spin drying is performed to dry the residue removing liquid 33.

[0138] There is no particular order between the start of gas discharge and the change in the speed at which the substrate W rotates due to the transition from step S23 to step S24. For example, the start of gas discharge and the change in speed are executed simultaneously.

[0139] After a predetermined time has elapsed since the spin drying is performed in step S24 (specifically, since the valve 62 is opened or the rotation speed of the substrate W is changed), the supply of gas is stopped (specifically, the valve 62 is closed), and step S24 is completed. After step S24 is completed, step S30 is executed.

[0140] In step S10, both the guards 41 and 42 are located at the upper positions U1 and U2, respectively. The treatment liquid 27 splashing from the upper surface Wa is received by the guard 41, and solutes contained in the treatment liquid 27 hardly adhere to the guard 42.

[0141] In step S20, the guard 41 is located at its lower position D1, and the guard 42 is located at its upper position U2. The stripping liquid 32, rinsing liquid 31, and residue removal liquid 33 splashing from the upper surface Wa are received by the guard 42, and solutes contained in the processing liquid 27 hardly adhere to the guard 41. Most of the substances adhering to the surface 41a of the guard 41 are solutes, and contamination of the guard 41 by the stripping liquid 32, rinsing liquid 31, and residue removal liquid 33 is suppressed.

[0142] In step S20, it is desirable that the guard 41 be in the lower position D1 in order to prevent the stripping liquid 32 and the rinse liquid 31 from adhering to the guard 41.

[0143] Even if there is adhesion on the guards 41 and 42 due to the already executed steps S10 and S20, and step S10 is subsequently executed for another substrate W, the guard 41 suppresses contamination of the upper surface Wa resulting from the adhesion on the guard 42. Suppressing contamination of the upper surface Wa in step S10 suppresses contamination of the processing liquid 27, and in turn suppresses a reduction in the ability of the retention layer 29 to capture foreign matter.

[0144] However, the deposits on the guard 41 in the preceding step S10 may become peeled solutes that adhere to the upper surface Wa. From the viewpoint of removing the peeled solutes on the upper surface Wa, it is desirable to perform step S30.

[0145] <4-3. Cleaning of guard 41> Step S30 includes steps S31 and S32, which are executed in this order. Step S31 is a step of discharging the residue removing liquid 33 onto the upper surface Wa and scattering the residue removing liquid 33 from the upper surface Wa to supply the residue removing liquid 33 to the guard 41. Step S32 is a step of performing spin drying to dry the residue removing liquid 33. The spin drying cleans the upper surface Wa, for example, to suppress so-called watermarks.

[0146] 12 is a schematic diagram illustrating the state inside the chamber 2 when step S31 is performed. When step S31 is performed, the guard 41 is positioned at its upper position U1 while the guard 42 is positioned at its upper position U2 by the guard lifting mechanism 44. As will be explained in a modification to be described later, in step S31 the guard 41 may also be positioned below its upper position U1.

[0147] When step S31 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. This speed can be changed in step S31, as will be explained in a variant described later.

[0148] When step S31 is executed, the opposing member 50 is placed at the middle position M5 by the opposing member lifting mechanism 52 (the opposing member 50 is located at the middle position M5).

[0149] In step S31, while the substrate W is rotating at the above-mentioned speed, the valve 23 is opened, and the residue removing liquid 33 is discharged from the residue removing liquid discharge nozzle 7 and supplied to the upper surface Wa. The residue removing liquid 33 supplied to the upper surface Wa spreads over substantially the entire surface of the upper surface Wa due to centrifugal force caused by the rotation at the above-mentioned speed, and then splashes outward from the periphery of the upper surface Wa. The splashed residue removing liquid 33 is received by the guard 41. The residue removing liquid 33 received by the guard 41 washes away the surface 41 a of the guard 41.

[0150] In step S31, the residue removal liquid 33 can be considered as a cleaning liquid that splashes from the upper surface Wa to the surface 41a, cleaning the surface 41a and removing solutes adhering to the surface 41a. The cleaning liquid has a component that removes solutes adhering to the surface 41a from the surface 41a, for example, a component that dissolves the solute. From this perspective, it can be said that the residue removal liquid 33 is used as the cleaning liquid. Furthermore, the residue removal liquid discharge nozzle 7 can be considered as a cleaning liquid discharge nozzle that discharges the cleaning liquid, and it can be said that the cleaning liquid discharge nozzle also serves as the residue removal liquid discharge nozzle 7.

[0151] After a predetermined time has elapsed since the supply of the residue removal liquid 33 was started in step S31 (specifically, since the valve 23 was opened), the supply of the residue removal liquid 33 is stopped (specifically, the valve 23 is closed), and step S31 is completed. After step S31 is completed, step S32 is executed.

[0152] 13 schematically illustrates the situation inside the chamber 2 when step S32 is performed. Even when step S32 is performed, the guards 41 and 42 remain at their respective upper positions U1 and U2. When step S32 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 500 rpm to 1500 rpm. When step S32 is performed, the opposing member lifting mechanism 52 positions the opposing member 50 at its lower position D5 (the opposing member 50 is at the lower position D5).

[0153] In step S32, the valve 62 is opened, and gas is discharged from the gas discharge nozzle 60 and supplied between the facing surface 50a and the upper surface Wa. As the substrate W rotates, centrifugal force acts on the residue removing liquid 33, and the residue removing liquid 33 is discharged from the periphery of the upper surface Wa of the substrate W. The supply of gas promotes volatilization of the residue removing liquid 33. In step S32, spin drying is performed to dry the residue removing liquid 33.

[0154] There is no particular order between the start of gas discharge and the change in the speed at which the substrate W rotates due to the transition from step S31 to step S32. For example, the start of gas discharge and the change in speed are executed simultaneously.

[0155] After spin drying is performed in step S32 (specifically, after valve 62 is opened or the rotation speed of the substrate W is changed), a predetermined time has elapsed and the gas supply is stopped (specifically, valve 62 is closed), and step S32 is completed.

[0156] Upon completion of step S32, step S30 is completed, and the particle removal process is terminated. Thereafter, preparations are made for removing the substrate W from the spin chuck 4. Specifically, the opposing member lifting mechanism 52 positions the opposing member 50 at its upper position U5 (the opposing member 50 is at the upper position U5), the guard lifting mechanism 44 positions the guard 41 at its lower position D1 (the guard 41 is at the lower position D1), and the guard 42 is positioned at its lower position (not shown) (the guard 42 is at its lower position), and the substrate W is released from the grip of the chuck pins 8.

[0157] Step S30 cleans the guard 41 to reduce the possibility that peeled solutes are present on the upper surface Wa. Specifically, this reduces the possibility that solutes contained in the processing liquid 27 for forming the retention layer 29 reach the substrate W separately from the processing liquid 27 supplied to the substrate W. Reducing this possibility reduces deterioration in the ability of the subsequently formed retention layer 29 to remove particles from the substrate W.

[0158] <4-4. Execution Order of Steps S10, S20, and S30> Assume that particle removal processing is performed on each of different substrates W. By reducing the occurrence of solutes that have adhered to the guard 41 by performing step S10 on a first substrate W becoming peeled solutes and reaching the upper surface Wa in step S10 subsequently performed on a second substrate W, deterioration in the performance of the retention layer 29 formed on the second substrate W is reduced.

[0159] In view of this, step S30 may be performed on either the first substrate W or the second substrate W after step S10 is performed on the first substrate W and before step S10 is performed on the second substrate W.

[0160] In the above-described embodiment, steps S10, S20, and S30 are performed in this order on the first substrate W, and then step S10 is performed on the second substrate W. In this case, step S30 performed on the first substrate W contributes to reducing deterioration in the performance of the retention layer 29 formed on the second substrate W.

[0161] For example, the particle removal process may first be performed in step S30, and then in steps S10 and S20. In this case, steps S10 and S20 are performed on a first substrate W, and then steps S30 and S10 are performed on a second substrate W. In this case, step S30 performed on the second substrate W contributes to reducing deterioration in the performance of the retention layer 29 formed on the second substrate W.

[0162] <4-5. General Viewpoint of the Embodiments> <4-5-1. Viewpoint as a Substrate Processing Method> The techniques disclosed in the above-described embodiments can be generally described as follows from the perspective of a substrate processing method exemplified by a particle removal process. The substrate processing method is a method in which a retention layer 29 that captures foreign matter on the upper surface Wa of a substrate W is formed on the upper surface Wa, and a process is performed to remove the foreign matter together with the retention layer 29. The substrate processing method is performed in a substrate processing apparatus 1. The substrate processing apparatus 1 includes a spin chuck 4 and a guard 41. The spin chuck 4 rotates the substrate W about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 41 has a surface 41a facing the spin chuck 4.

[0163] The substrate processing method includes steps S10, S20, and S30. Step S10 includes steps S11, S12, and S13. Step S11 is a step of supplying a processing liquid 27 to the upper surface Wa of the substrate W. The processing liquid 27 contains a solute and a solvent, and forms a retention layer 29 by solidification or hardening. Step S12 is a step of rotating the substrate W to cause a portion of the processing liquid 27 supplied to the upper surface Wa to scatter outward from the upper surface Wa. Step S13 is a step of solidifying or hardening the processing liquid 27 remaining on the upper surface Wa to form a retention layer 29 on the upper surface Wa. Step S20 is a step of removing the retention layer 29 from the upper surface Wa.

[0164] Step S30 includes steps S31 and S32. Step S31 is a step of supplying a cleaning liquid to the upper surface Wa to clean the surface 41 a. Step S32 is a step of rotating the substrate W to splash the cleaning liquid from the upper surface Wa onto the surface 41 a.

[0165] The substrate W to be processed in steps S10 and S20 may be the same as or different from the substrate W to be processed in step S30. For example, when the above-described substrate processing method is repeatedly performed, the substrate W already processed in step S30 in the preceding substrate processing method may be different from the substrate W to be processed in steps S10 and S20 in the subsequent substrate processing method.

[0166] Although the example has been given in which the residue removal liquid 33 is used as the cleaning liquid, the residue removal liquid 33 does not necessarily have to be used as the same cleaning liquid. For example, IPA may be used as the residue removal liquid 33, and PGME may be used as the cleaning liquid. The cleaning liquid having a component that dissolves solutes is useful for cleaning the surface 41 a.

[0167] This substrate processing method reduces the occurrence of solutes contained in the processing liquid 27 for forming the retention layer 29 reaching the substrate W separately from the processing liquid 27 supplied to the substrate W.

[0168] The substrate processing apparatus 1 may further include a guard 42. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1. The guard 41 can be positioned at either an upper position U1 or a lower position D1. The lower position D1 is lower than the upper position U1.

[0169] When the guard 41 is located at the upper position U1, the guard 41 is located between the holding position where the spin chuck 4 holds the substrate W, for example, the position 8a of the upper end of the chuck pin 8, when viewed in a direction perpendicular to the rotation axis A1, for example, the horizontal direction, and the holding position, while the guard 41 is located at the lower position D1, the guard 41 is not located between the holding position and the guard 42 when viewed in the above-mentioned direction.

[0170] When step S10 is executed, the guard 41 is located at the upper position U1, when step S20 is executed, the guard 41 is located at the lower position D1, and when step S30 is executed, the guard 41 is located at the upper position U1.

[0171] By disposing the guard 41 in this manner, contamination of the upper surface Wa resulting from attachment of the guard 42 in step S10 is suppressed, and a reduction in the ability of the retaining layer 29 to capture foreign matter is suppressed.

[0172] Step S20 may include steps S21 and S23. Step S21 is a step of removing the retention layer 29 on the upper surface Wa using a remover 32. Step S22 is a step of removing residues on the upper surface Wa after the retention layer 29 has been removed using a residue removal liquid 33. For example, the residue removal liquid 33 is used as the above-mentioned cleaning liquid.

[0173] By using the nozzles in this way, it is not necessary to provide a nozzle for discharging the cleaning liquid separately from the residue removal liquid discharging nozzle 7, and the cost of manufacturing the substrate processing apparatus 1 is reduced.

[0174] In step S32, when or after the substrate W is rotated to splash the cleaning liquid from the upper surface Wa onto the surface 41 a, the cleaning liquid on the upper surface Wa may be dried. This drying corresponds to the process of spin-drying the residue removal liquid 33 described with reference to Fig. 13. Drying the cleaning liquid by spin-drying contributes to cleaning the upper surface Wa.

[0175] Regardless of whether step S30 is performed or not, the guard 41 is positioned at the upper position U1 when step S10 is performed, and the guard 41 is positioned at the lower position D1 when step S20 is performed, which suppresses contamination of the upper surface Wa caused by adhesions on the guard 42 in step S10 and suppresses a reduction in the ability of the retaining layer 29 to absorb foreign matter.

[0176] From this perspective, the following substrate processing method, which does not require step S30, can also be envisioned. The substrate processing method involves forming a retention layer 29 on the upper surface Wa of the substrate W, which captures foreign matter on the upper surface Wa, and then performing a process to remove the foreign matter together with the retention layer 29. The substrate processing method is performed in a substrate processing apparatus 1. The substrate processing apparatus 1 includes a spin chuck 4 and guards 41 and 42. The spin chuck 4 rotates the substrate W about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 41 has a surface 41a facing the spin chuck 4. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1. The guard 41 can be positioned at either an upper position U1 or a lower position D1. The lower position D1 is lower than the upper position U1.

[0177] The substrate processing method includes steps S10 and S20. Step S10 includes steps S11, S12, and S13. Step S11 is a step of supplying a processing liquid 27 to the upper surface Wa of the substrate W. The processing liquid 27 contains a solute and a solvent, and forms a retention layer 29 by solidification or hardening. Step S12 is a step of rotating the substrate W to cause a portion of the processing liquid 27 supplied to the upper surface Wa to scatter outward from the upper surface Wa. Step S13 is a step of solidifying or hardening the processing liquid 27 remaining on the upper surface Wa to form a retention layer 29 on the upper surface Wa. Step S20 is a step of removing the retention layer 29 from the upper surface Wa.

[0178] When the guard 41 is located at the upper position U1, the guard 41 is located between the holding position where the spin chuck 4 holds the substrate W, for example, the position 8a of the upper end of the chuck pin 8, and the guard 42 when viewed along a direction perpendicular to the rotation axis A1, for example, the horizontal direction. When the guard 41 is located at the lower position D1, the guard 41 is not located between the holding position and the guard 42 when viewed along the above-mentioned direction. When step S10 is performed, the guard 41 is located at the upper position U1, and when step S20 is performed, the guard 41 is located at the lower position D1.

[0179] <4-5-2. Viewpoint of the Substrate Processing Apparatus 1> The technology disclosed in the above-described embodiment can be generally described as follows from the viewpoint of a substrate processing apparatus 1 that executes a substrate processing method exemplified by a particle removal process. The substrate processing apparatus 1 includes a spin chuck 4, guards 41 and 42, a processing liquid discharge nozzle 5, a stripping liquid discharge nozzle 6, a cleaning liquid discharge nozzle exemplified by a residue removal liquid discharge nozzle 7, and a guard lifting mechanism 44.

[0180] The spin chuck 4 rotates the substrate W having an upper surface Wa about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1 and has a surface 41a facing the spin chuck 4. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1.

[0181] The processing liquid discharge nozzle 5 is disposed above the spin chuck 4. The processing liquid discharge nozzle 5 discharges the processing liquid 27 downward. In other words, the processing liquid 27 is discharged downward from the processing liquid discharge nozzle 5.

[0182] The remover liquid discharge nozzle 6 is disposed above the spin chuck 4. The remover liquid discharge nozzle 6 discharges the remover liquid 32 downward. In other words, the remover liquid 32 is discharged downward from the remover liquid discharge nozzle 6.

[0183] The cleaning liquid discharge nozzle is disposed above the spin chuck 4. The cleaning liquid discharge nozzle discharges the cleaning liquid downward. In other words, the cleaning liquid is discharged downward from the cleaning liquid discharge nozzle.

[0184] The remover 32 removes the retention layer 29 formed on the upper surface Wa. The retention layer 29 is formed on the upper surface Wa by solidifying or curing the processing liquid 27 on the upper surface Wa, and captures foreign matter on the upper surface Wa. The processing liquid 27 contains a solute and a solvent. The cleaning liquid has a component that removes solutes adhering to the surface 41 a of the guard 41 facing the spin chuck 4. The cleaning liquid having a component that dissolves solutes is useful for cleaning the surface 41 a.

[0185] The guard lifting mechanism 44 lifts and lowers the guard 41. When the processing liquid discharge nozzle 5 discharges and supplies the processing liquid 27 onto the upper surface Wa and the spin chuck 4 rotates the substrate W at a speed at which the processing liquid 27 scatters from the upper surface Wa (300 rpm to 1500 rpm in the above example), the guard lifting mechanism 44 places the guard 41 at the upper position U1.

[0186] When the remover discharge nozzle 6 discharges and supplies the remover 32 to the upper surface Wa and the spin chuck 4 rotates the substrate W at a speed at which the remover 32 splashes from the upper surface Wa (500 rpm to 800 rpm in the above example), the guard lifting mechanism 44 places the guard 41 at the lower position D1, which is lower than the upper position U1.

[0187] When the cleaning liquid discharge nozzle discharges and supplies cleaning liquid to the upper surface Wa, and the spin chuck 4 rotates the substrate W at a speed at which the cleaning liquid splashes from the upper surface Wa (100 rpm to 1000 rpm in the above example), the guard lifting mechanism 44 positions the guard 41 at the upper position U1.

[0188] When the guard 41 is located at the upper position U1, the guard 41 is located between the holding position where the spin chuck 4 holds the substrate W, for example, the position 8a of the upper end of the chuck pin 8, when viewed in a direction perpendicular to the rotation axis A1, for example, the horizontal direction, and the holding position, while the guard 41 is located at the lower position D1, the guard 41 is not located between the holding position and the guard 42 when viewed in the above-mentioned direction.

[0189] For example, the substrate processing apparatus 1 includes a control device 107. The control device 107 controls the rotation of the substrate W by the spin chuck 4, the positioning of the guards 41 and 42 by the guard lifting mechanism 44, the discharge of the processing liquid 27 from the processing liquid discharge nozzle 5, the discharge of the stripping liquid 32 from the stripping liquid discharge nozzle 6, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle. The control device 107 contributes to cooperation between the rotation of the substrate W, the positioning of the guards 41 and 42, the discharge of the processing liquid 27, the discharge of the stripping liquid 32, and the discharge of the cleaning liquid.

[0190] The substrate W having the upper surface Wa to which the processing liquid 27 and the stripping liquid 32 are supplied may be the same as or different from the substrate W having the upper surface Wa to which the cleaning liquid is supplied. For example, when the supply of the processing liquid 27 and the stripping liquid 32 and the supply of the cleaning liquid are repeatedly performed, the substrate W having the upper surface Wa to which the cleaning liquid has already been supplied may be different from the substrate W having the upper surface Wa to which the processing liquid 27 and the stripping liquid 32 are subsequently supplied.

[0191] The substrate processing apparatus 1 reduces the occurrence of solutes contained in the processing liquid 27 for forming the retention layer 29 reaching the substrate W separately from the processing liquid 27 supplied to the substrate W.

[0192] The substrate processing apparatus 1 may include a residue removing solution discharge nozzle 7. The residue removing solution discharge nozzle 7 discharges a residue removing solution 33. The residue removing solution 33 is discharged from the residue removing solution discharge nozzle 7 onto the upper surface Wa. The residue removing solution 33 removes residues on the upper surface Wa after the retention layer 29 formed on the upper surface Wa has been peeled off.

[0193] Although the example has been given in which the residue removal liquid 33 is used as the cleaning liquid, the residue removal liquid 33 does not necessarily have to be used as the same cleaning liquid. For example, IPA can be used as the residue removal liquid 33, and PGME can be used as the cleaning liquid.

[0194] When the residue removing liquid 33 is not used as a cleaning liquid, a residue removing liquid discharge nozzle 7 may be provided in addition to the cleaning liquid discharge nozzle in the substrate processing apparatus 1. Using the residue removing liquid 33 as the cleaning liquid and using the residue removing liquid discharge nozzle 7 as a cleaning liquid discharge nozzle reduces the cost of manufacturing the substrate processing apparatus 1.

[0195] <5. Modifications> <5-1. Modifications of the Nozzle> In the above embodiment, the processing liquid discharge nozzle 5 may have a plurality of nozzle holes, and the processing liquid 27 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0196] In the above embodiment, the remover liquid discharge nozzle 6 may have a plurality of nozzle holes, and the remover liquid 32 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0197] In the above embodiment, the residue removing solution discharge nozzle 7 may have a plurality of nozzle holes, and the residue removing solution 33 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0198] In the above embodiment, the rinse liquid discharge nozzle 65 may have a plurality of nozzle holes, and the rinse liquid 31 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0199] 5-2. Position of the guard 41 The following modifications are possible in step S31. When the residue removal liquid 33 splashes from the upper surface Wa, the guard 41 may be positioned at any intermediate position between its upper position U1 and its lower position D1 by the guard lifting mechanism 44 (the guard 41 may be positioned at the intermediate position), or may be moved between the intermediate position and the upper position U1, or may be moved between the upper position U1 and the lower position D1. These modifications are desirable from the viewpoint of expanding the range over which adhering substances on the guard 41 are washed away.

[0200] 5-3. Rotation Speed ​​of Substrate W The following variations are possible in step S31. When the residue removal liquid 33 is scattered from the upper surface Wa, the rotation speed of the substrate W may be changed by the spin motor 11. The lower the speed, the more likely the residue removal liquid 33 scattered from the upper surface Wa will reach below the guard 41. A technique for varying the position where the scattered liquid reaches by varying the speed in this way is exemplified, for example, in Patent Document 3.

[0201] As described above in "5-2. Position of guard 41," when the position of the guard 41 varies, the upper and lower limits of the rotation speed of the substrate W may be different for each position of the guard 41. For example, when the guard 41 is located at its upper position U1, the substrate W may rotate at a speed equal to or greater than v1 and equal to or less than v2, and when the guard 41 is located at an intermediate position, the substrate W may rotate at a speed equal to or greater than v3 and equal to or less than v4, where v3<v1<v4<v2.

[0202] <5-4. Rotation of the Facing Member 50> The substrate processing apparatus 1 may be provided with a function for rotating the facing member 50 about the rotation axis A1. For example, the facing member 50 may rotate about the rotation axis A1 at a speed similar to, for example, the same speed as, the rotation speed of the substrate W. By rotating the facing member 50 in this manner, turbulence between the facing surface 50a and the upper surface Wa is reduced, and the processing liquid 27, the stripping liquid 32, the residue removal liquid 33, and the rinse liquid 31 are each more likely to be uniformly distributed on the upper surface Wa.

[0203] <5-5. Addition of Cleaning Liquid Discharge Nozzle> The cleaning liquid used to clean the surface 41a may be different from the residue removing liquid 33. For example, PGME may be used as the residue removing liquid 33, and IPA may be used as the cleaning liquid. When the cleaning liquid and the residue removing liquid 33 are different, the chamber 2 may be provided with a cleaning liquid discharge nozzle that discharges the cleaning liquid, separate from the residue removing liquid discharge nozzle 7. Even when the same liquid is used for the cleaning liquid and the residue removing liquid 33, the chamber 2 may be provided with a cleaning liquid discharge nozzle that discharges the cleaning liquid, separate from the residue removing liquid discharge nozzle 7.

[0204] It goes without saying that all or part of the components constituting each of the above-described embodiments and various modified examples can be combined as appropriate within a range that does not cause contradictions.

[0205] REFERENCE SIGNS LIST 1 Substrate processing apparatus 4 Spin chuck (rotating device) 5 Processing liquid discharge nozzle 6 Stripping liquid discharge nozzle 7 Residue removal liquid discharge nozzle (cleaning liquid discharge nozzle) 8a Position (holding position) 27 Processing liquid 29 Holding layer 32 Stripping liquid 33 Residue removal liquid 41, 42 Guard 41a Surface 44 Guard lifting mechanism 107 Control device A1 Rotation axis D1 Lower position S10, S11, S12, S13, S20, S21, S22, S23, S30, S31, S32 Step (process) U1 Upper position W Substrate Wa Upper surface

Claims

1. In a substrate processing apparatus including a rotating device that rotates a substrate having an upper surface about a vertical axis of rotation, and a first guard that surrounds the rotating device as viewed along the axis of rotation and has a surface facing the rotating device, a method for forming a retention layer on the upper surface of the substrate that captures foreign matter thereon and performing a process for removing the foreign matter together with the retention layer, the method comprising the steps of: supplying a processing liquid that contains a solute and a solvent and forms the retention layer by solidification or hardening to a first upper surface, which is the upper surface of a first substrate; rotating the first substrate to scatter a portion of the processing liquid supplied to the first upper surface outward from the first upper surface; and forming the retention layer on the first upper surface by the solidification or hardening of the processing liquid remaining on the first upper surface; and a second step of removing the retention layer on the first upper surface. a third step including a step of supplying a cleaning liquid for cleaning the surface to a second upper surface, which is the upper surface of the second substrate, and a step of rotating the second substrate to splash the cleaning liquid from the second upper surface onto the surface.

2. The substrate processing method of claim 1, further comprising: a second guard surrounding the first guard when viewed along the rotation axis; the first guard can be positioned either in an upper position or in a lower position lower than the upper position; when the first guard is positioned in the upper position, when viewed along a direction perpendicular to the rotation axis from a holding position at which the rotating device holds the substrate, the first guard is between the holding position and the second guard; and when the first guard is positioned in the lower position, when viewed along the direction perpendicular to the rotation axis, the first guard is not between the holding position and the second guard; when the first step is performed, the first guard is positioned in the upper position, when the second step is performed, the first guard is positioned in the lower position, and when the third step is performed, the first guard is positioned in the upper position.

3. A substrate processing method according to claim 1 or claim 2, wherein the third process is carried out after the first process and the second process, and the second substrate is the first substrate.

4. A substrate processing method according to claim 1 or claim 2, wherein the third step is performed before the first step and the second step, and the second substrate is different from the first substrate.

5. The substrate processing method of claim 1, wherein the second step comprises the steps of: peeling off the retention layer on the first upper surface using a peeling liquid; and removing residues on the first upper surface after the retention layer has been peeled off using a residue removal liquid, and the residue removal liquid is used as the cleaning liquid.

6. The substrate processing method of claim 1, wherein in the third step, the cleaning liquid on the second upper surface is dried while or after rotating the second substrate to splash the cleaning liquid from the second upper surface onto the surface.

7. A substrate processing apparatus comprising: a rotating device which rotates a substrate having an upper surface about a vertical axis of rotation; a first guard which surrounds the rotating device as viewed along the axis of rotation and has a surface on the rotating device side; a second guard which surrounds the first guard as viewed along the axis of rotation; a processing liquid discharge nozzle which is disposed above the rotating device and discharges a processing liquid downward; a stripping liquid discharge nozzle which is disposed above the rotating device and discharges a stripping liquid downward; and a cleaning liquid discharge nozzle which is disposed above the rotating device and discharges a cleaning liquid downward; wherein the stripping liquid peels off a retention layer formed on a first upper surface which is the upper surface of a first substrate; the retention layer is formed on the first upper surface by the processing liquid solidifying or hardening on the first upper surface, and captures foreign matter on the first upper surface; the processing liquid includes a solute and a solvent; when the processing solution discharge nozzle discharges the processing solution to supply it to the first upper surface and the rotating device rotates the first substrate at a speed at which the processing solution scatters from the first upper surface, the first guard is located at an upper position; when the stripping solution discharge nozzle discharges the stripping solution to supply it to the first upper surface and the rotating device rotates the first substrate at a speed at which the stripping solution scatters from the first upper surface, the first guard is located at a lower position lower than the upper position; when the cleaning solution discharge nozzle discharges the cleaning solution to supply it to the second upper surface, which is the upper surface of the second substrate, and the rotating device rotates the second substrate at a speed at which the cleaning solution scatters from the second upper surface, the first guard is located at the upper position; when the first guard is located at the upper position, the first guard is between the holding position and the second guard when viewed from a holding position where the rotating device holds the substrate along a direction perpendicular to the rotation axis, a cleaning liquid having a component for removing the solute adhering to a surface of the first guard facing the rotating device, the cleaning liquid being disposed in a position adjacent to the holding position of the first guard when the first guard is located in the lower position; 8. The substrate processing apparatus of claim 7, further comprising a control device that controls the rotation of the substrate by the rotation device, the position of the first guard, the position of the second guard, the discharge of the processing liquid from the processing liquid discharge nozzle, the discharge of the stripping liquid from the stripping liquid discharge nozzle, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle.

9. The substrate processing apparatus according to claim 7 or 8, wherein the second substrate is the first substrate.

10. The substrate processing apparatus according to claim 7 or claim 8, wherein the second substrate and the first substrate are different.

11. The substrate processing apparatus according to claim 7, further comprising: a residue removing liquid discharge nozzle that discharges downward a residue removing liquid for removing residues on the first upper surface after the retention layer formed on the first upper surface has been peeled off.

12. The substrate processing apparatus according to claim 11, wherein the residue removing liquid is used as the cleaning liquid, and the residue removing liquid discharge nozzle also serves as the cleaning liquid discharge nozzle.

Images