Mask and exposure method

Abstract

The purpose of the invention is to provide a phase shift mask that can be formed in a shorter takt time than when a mask provided with a phase-shift film having a transmittance of about 5% is used.　A mask (300) comprises: a phase shift film (20) that has an exposure light (wavelength λ) transmittance of 35% and a square contact hole pattern (20a), and that is formed on a mask substrate; and a light-shielding film (30) that is formed on the phase shift film (20) and that has a polygonal aperture pattern (30a) for exposing the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 to 0.52 λ / NA, the length of one side of the contact hole pattern (20a) is 0.71 to 0.82 λ / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal aperture pattern (30a) is 0.48 to 0.64 λ / NA.

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