Metasurface element and metasurface system
By adding short-circuit points and slots on the radiation patch of the metasurface system and changing its working mode, the problems of increased loss, increased control complexity and poor performance stability in multi-bit reconfigurable metasurface systems are solved, achieving Multi-bit dual polarization function reduces polarization crosstalk and AC and DC isolation issues.
Patent Information
- Application Number
- PCT/CN2024/103364
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-07-17
- Filing Date
- 2024-07-03
- Publication Date
- 2025-01-23
AI Technical Summary
When building multi-bit reconstructible metasurfaces, existing metasurface systems have problems such as increased loss, increased control complexity and poor performance stability, especially when polarization transitions from monopolarization to dual-polarization. Polarized crosstalk, AC-DC isolation and surface wave problems.
By adding short-circuit points on the edge of the radiation patch and making slots in the middle of the radiation patch, the working mode of the radiation patch is changed, thereby achieving different phase responses to incident electromagnetic waves and achieving the purpose of controlling space beam synthesis.
The Dabi Special Dualization can reconstruct the function of the intelligent ultra -surface, reduce the loss, simplifies the control logic, improves performance stability, and solves the problem of polarization string disturbance and communication.
Smart Images

Figure CN2024103364_23012025_PF_FP_ABST
Abstract
Description
Metasurface unit and metasurface system
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] This application claims priority to Chinese patent application No. 202310884171.4 filed on July 17, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field
[0003] The present disclosure relates to the field of communications, and in particular, to a metasurface unit and a metasurface system. Background Art
[0004] Metasurfaces have been widely studied for their ability to efficiently and cost-effectively control electromagnetic waves in space. In particular, after combining metasurfaces with adjustable devices to form reconfigurable metasurfaces, their flexibility has been greatly improved and they can be applied to a variety of different scenarios. As a result, various forms of reconfigurable metasurfaces have emerged in recent years, including high- and low-frequency, multi-bit, and multi-polarization reconfigurable metasurfaces.
[0005] Currently, the main tunable devices integrated with metasurfaces include discrete-state tunable devices such as PIN transistors and continuous-state tunable devices such as varactors. PIN transistors offer low loss and support a wide frequency range, but they have only two states: on and off. Therefore, constructing a multi-bit reconfigurable metasurface requires multiple PIN transistors. The higher the number of bits, the more PIN transistors are needed, which increases losses. Compared to PIN transistors, varactors inherently possess multi-bit characteristics, but they suffer from higher losses, making their control more complex, especially when implementing multi-bit configurations.
[0006] In addition, when transitioning from a single-polarization metasurface to a dual-polarization metasurface, there will be problems such as polarization crosstalk, AC / DC isolation, and surface waves, while when transitioning from a single bit to a multi-bit, there will be problems such as increased loss, more control lines, and poor performance stability.
[0007] Public content
[0008] The present disclosure provides a metasurface unit, including a radiation patch layer, wherein the radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at the edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and the state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.
[0009] The present disclosure provides a metasurface unit, comprising a radiation patch layer, a radiation ground layer, a filter branch layer, a first ground layer, a control wiring layer and a second ground layer stacked in sequence, wherein the radiation patch layer comprises a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at the edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and the state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.
[0010] The present disclosure provides a metasurface system comprising a plurality of the above-mentioned metasurface units. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the technical solutions of the present disclosure, but do not constitute a limitation of the present disclosure. In the accompanying drawings:
[0012] FIG1A is a perspective view showing a metasurface unit according to an embodiment of the present disclosure;
[0013] FIG1B is a side view showing a metasurface unit according to an embodiment of the present disclosure;
[0014] FIG2 is an exploded perspective view showing a metasurface unit according to an embodiment of the present disclosure;
[0015] FIG3 is a top view showing a radiation patch layer in a metasurface unit according to an embodiment of the present disclosure;
[0016] FIG4 is a top view showing a radiation formation in a metasurface unit according to an embodiment of the present disclosure;
[0017] 5 and 6 are top views showing a filtering branch layer in a metasurface unit according to an embodiment of the present disclosure;
[0018] 7 is a top view showing a control wiring layer in a metasurface unit according to an embodiment of the present disclosure;
[0019] FIG8 is a diagram showing a logical topology of a metasurface unit according to an embodiment of the present disclosure;
[0020] 9 to 16 are equivalent circuit diagrams illustrating various implementations of a metasurface unit according to an embodiment of the present disclosure; and
[0021] FIG17 is a schematic diagram showing a metasurface system according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0022] In order to enable those skilled in the art to better understand the technical solutions of the present disclosure, example embodiments will be described more fully below with reference to the accompanying drawings, but the example embodiments can be implemented in different forms, and the present disclosure should not be interpreted as being limited to the embodiments described herein. The purpose of providing these embodiments is to make the present disclosure more thorough and complete, and to enable those skilled in the art to fully understand the scope of the present disclosure. It should be recognized that the drawings are only used to describe the embodiments of the present disclosure, and the sizes of the various elements or parts shown in the drawings are not drawn to scale.
[0023] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0024] The terminology used herein is intended only to describe specific example embodiments and does not limit the claimed subject matter. As used herein, unless the context clearly indicates otherwise, the singular forms "a," "an," and "the" also include the plural forms. It should also be understood that when the terms "comprise" and / or "comprising..." are used in this specification, they indicate the presence of specific features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.
[0025] It will be understood that although the terms "first" and "second" etc. are used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts are not limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first element, first component, first region, first layer or first part discussed below may be referred to as the second element, second component, second region, second layer or second part without departing from the teachings disclosed herein. In addition, the first element, first component, first region, first layer or first part in some embodiments may be different from the first element, first component, first region, first layer or first part in some embodiments.
[0026] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art in the art to which the subject matter disclosed herein belongs. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal manner unless such definition is explicitly made herein.
[0027] It should also be understood that, unless the context clearly indicates otherwise, the description of the features or aspects within each exemplary embodiment should generally be considered to be applicable to other similar features or aspects in other exemplary embodiments. In the absence of conflict, the various embodiments of the present disclosure and the various features in the various embodiments can be combined with each other.
[0028] A single-bit dual-polarization metasurface unit and a metasurface system are described in a Chinese patent application (Application No.: 202310074667.5), the disclosure of which is hereby incorporated by reference in its entirety.
[0029] In order to further upgrade the single-bit dual-polarization metasurface to a multi-bit dual-polarization metasurface, according to the technical solution disclosed in the present invention, the working mode of the radiation patch is changed by adding short-circuit points at the edge of the radiation patch and slotting the middle of the radiation patch, thereby achieving different phase responses to the incident electromagnetic waves and achieving the purpose of controlling spatial beam synthesis.
[0030] This disclosure proposes a multi-bit dual-polarization reconfigurable intelligent metasurface for applications such as blind spot and heat filling under wireless network coverage.
[0031] An embodiment of the present disclosure provides a super-surface unit. FIG1A is a perspective view of the super-surface unit according to an embodiment of the present disclosure. FIG1B is a side view of the super-surface unit according to an embodiment of the present disclosure. FIG2 is an exploded perspective view of the super-surface unit according to an embodiment of the present disclosure.
[0032] 1A , 1B and 2 , the metasurface unit according to an embodiment of the present disclosure includes: a radiation patch layer 10 , a radiation ground layer 20 , a filtering branch layer 30 , a first ground layer 40 , a control wiring layer 50 and a second ground layer 60 .
[0033] The radiation patch layer 10 includes a radiation patch 101 , a first mode switching module 110 and a second mode switching module 120 .
[0034] The radiating patch 101, the first mode switching module 110, and the second mode switching module 120 together constitute the radiating structure of the metasurface unit. By controlling the on / off of the adjustable components in the mode switching module (e.g., the first switch 103 and the second switch 107), the operating mode of the radiating structure can be adjusted, thereby adjusting the electromagnetic response of the radiating structure. That is, the state of the first mode switching module 110 and the state of the second mode switching module 120 can be combined to form a multi-bit control state. The radiating patch 101 can be in various forms, such as a patch, a dipole, or a slot, and this disclosure does not specifically limit this.
[0035] FIG3 is a top view showing a radiation patch layer in a metasurface unit according to an embodiment of the present disclosure, and FIG4 is a top view showing a radiation stratum in a metasurface unit according to an embodiment of the present disclosure.
[0036] 2 , 3 and 4 , the first mode switching module 110 includes a first branch 102 , a first switch 103 , a second branch 104 and a first control channel 201 .
[0037] As shown in Figures 2 and 3, the first branch 102 is connected to the side of the radiation patch 101, the second branch 104 is connected to the first control channel 201, and the first switch 103 is connected between the first branch 102 and the second branch 103. By changing the first control loop composed of the first control channel 201 and the third control channel 203 to be described later, the state of the first mode switching module 110 can be changed. According to needs, the first control channel 201 can be selectively grounded or connected to the digital control interface at the back end, so that the mode switching of the metasurface unit can be achieved by controlling the short circuit and open circuit of the edge current of the radiation patch 101. The specific structure of the first switch 103 is not limited, and can be a PIN tube, a switch, a MEMS tube, a non-volatile device, etc.
[0038] 3 , the second mode switching module 120 includes a third branch 106 , a second switch 107 , a fourth branch 108 and a second control channel 202 .
[0039] As shown in Figure 3, a cross-shaped slot 109 is formed in the center of the radiating patch 101, and the second mode switching module 120 is located in the slot 109. The fourth branch 108 is connected to the radiating patch 101, the third branch 106 is connected to the second control channel 202, and the second switch 107 is connected between the third branch 106 and the fourth branch 108. The state of the second mode switching module 120 can be changed by changing the second control loop formed by the second control channel 202 and the third control channel 203 (described later). As needed, the second control channel 202 can be selectively grounded or connected to a back-end digital control interface. This allows the current path on the radiating patch 101 to be changed by controlling the short-circuit and open-circuit current at the center of the radiating patch 101, thereby achieving mode switching of the metasurface unit. The specific structure of the second switch 107 is not limited and can be a PIN transistor, switch, MEMS transistor, non-volatile device, etc. The first mode switching module 110, the second mode switching module 120, and the slot 109 together constitute the mode adjustment structure of the metasurface unit. The shape of the slot 109 is not limited to the cross shape shown in the figure, but may include any shape such as an irregular polygon, a regular polygon, a circle, etc., which is not specifically limited in the present disclosure.
[0040] A second switch 107 is introduced at the slot 109 in the center of the radiating patch 101. The on-off switching of the second switch 107 changes the current flow path, thereby generating two modes. A first switch 103 is introduced at the edge of the radiating patch 101. The on-off switching of the first switch 103 sets the current to the maximum and minimum states, thereby generating two modes. By properly fine-tuning these modes, the multi-bit dual-polarization characteristics of the metasurface unit can be achieved. The specific implementation of the multi-bit dual-polarization characteristics of the metasurface unit according to various embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
[0041] As shown in Figures 2 and 3, the radiating patch layer 10 also includes a microstrip frame 105, and a circle of conductive vias 205 is formed between the microstrip frame 105, the radiating stratum 20, and the first stratum 40. The microstrip frame 105 and the conductive vias 205 together constitute the substrate-back cavity surface wave suppression structure of the metasurface unit, whose primary function is to suppress surface waves in the metasurface array and improve the operating angle. The radiating patch 101 is entirely arranged in the cavity formed by the microstrip frame 105, the conductive vias 205, and the radiating stratum 20 to suppress coupling between the metasurface units and improve wide-angle scanning performance.
[0042] As shown in FIG4 , a hole is formed in the radiation stratum 20, and the third control channel 203 and the fourth control channel 204 to be described later can pass through the hole in the radiation stratum 20, and the third control channel 203 can be connected to the radiation patch 101 to realize the dual-polarization feature of the metasurface unit.
[0043] 5 and 6 are top views showing a filtering branch layer in a metasurface unit according to an embodiment of the present disclosure.
[0044] In some embodiments, the filter branch layer 30 includes a first filter branch layer and a second filter branch layer arranged sequentially. FIG. 5 shows a top view of the first filter branch layer, and FIG. 6 shows a top view of the second filter branch layer.
[0045] As shown in Figures 2 and 5 , the first filter branch layer includes two rectangular first filter branches 301 for isolating RF signals from DC signals (or digital signals) to reduce RF insertion loss. The two first filter branches 301 are connected to the two third control channels 203 respectively.
[0046] As shown in Figures 2 and 6 , the second filter branch layer includes two fan-shaped second filter branches 302 to further enhance the isolation capability between RF signals and DC signals (or digital signals). The two second filter branches 302 are connected to the two third control channels 203 respectively.
[0047] The first filter branch 301 and the second filter branch 302 can be used to reflect radio frequency waves of the same frequency band or radio frequency waves of different frequency bands. By providing multiple layers (e.g., two layers) of filter branches, better reflection of radio frequency waves can be achieved, thereby better achieving AC and DC isolation.
[0048] As shown in Figures 2, 5 and 6, in an embodiment of the present disclosure, the first filter branch 301 is arranged in a rectangular shape, and the second filter branch 302 is arranged in a fan shape, but the present disclosure is not limited to this. The shapes of the first filter branch 301 and the second filter branch 302 can be other shapes, for example, polygons, etc. The difference in the shape and area of the filter branches brings about the difference in the reflection frequency band, which can be adjusted as needed. In addition, although in an embodiment of the present disclosure, the filter branch layer 30 is implemented as a first filter branch layer and a second filter branch layer, the present disclosure is not limited to this, and the number of filter branch layers can be three or more layers.
[0049] As shown in Figures 2 and 6, the two third control channels 203 connected to the radiating patch 101 are combined through a combining branch 303 to achieve dual-polarization simultaneous control. The fourth control channel 204 is connected to the third control channel 203 through a control combining branch 304 (also called a "remote branch").
[0050] The first filter branch layer, the second filter branch layer, the remote branch 304, and the fourth control channel 204 together form the metasurface unit's double-layer remote AC / DC isolation structure, primarily isolating AC and DC to reduce RF losses. Furthermore, the fourth control channel 204 also assists the metasurface unit's substrate-back cavity surface wave suppression structure, suppressing surface waves.
[0051] FIG. 7 is a top view illustrating a control wiring layer in a metasurface unit according to an embodiment of the present disclosure.
[0052] As shown in FIG. 7 , the fourth control channel 204 may be connected to a control structure (not shown) in the control wiring layer 50 through a connection branch 501 in the control wiring layer 50 .
[0053] According to an embodiment of the present disclosure, the digital signal input from the control structure (not shown) in the control wiring layer 50 to the radiating patch 101 can enter the radiating patch 101 through the two third control channels 203 respectively; and the dual-polarized RF signal from the radiating patch 101 will be separated at the two third control channels 203 and reflected to the radiating patch 101 by the two first filter branches 301 and the two second filter branches 302 respectively, thereby avoiding mutual influence between the digital signal and the RF signal, and preventing the RF signal from being conducted to the control structure and affecting the operation of the control structure. In this way, AC and DC isolation can be achieved, that is, isolation of digital signals from RF signals, and the problem of polarization crosstalk of the dual-polarized metasurface can be solved.
[0054] In addition, the control structure and the two third control channels 203 are connected through the fourth control channel 204 to extend the path between the control structure and the filter branch layer 30, thereby further reducing the remaining RF signal after the RF signal from the radiation patch 101 passes through the filter branch layer 30, thereby reducing interference with the control structure.
[0055] In some embodiments of the present disclosure, the two third control channels 203 are connected to the control structure (not shown) in the control wiring layer 50 via the fourth control channel 204 after being combined. Therefore, only one port can be set on the control structure, and two polarizations can be controlled by one port, which can reduce the number of port settings. However, the embodiments of the present disclosure are not limited to this. In other embodiments of the present disclosure, the fourth control channel 204 may not be provided, and the two third control channels 203 may not be combined, but instead are connected to the control structure in the control wiring layer 50 separately.
[0056] FIG8 is a diagram showing a logical topology of a metasurface unit according to an embodiment of the present disclosure.
[0057] As shown in FIG8 , in the metasurface unit according to an embodiment of the present disclosure, a control method in the form of total (control structure)-divided (two third control channels 203 )-total (radiation patch 101 ) is adopted.
[0058] According to an embodiment of the present disclosure, as shown in FIG2 , the structures of the first layer 40 and the radiation layer 20 are substantially the same, so they are not described in detail. In addition, the structure of the second layer 60 is clearly shown in FIG2 , so it is not described in detail.
[0059] The first control channel 201, the second control channel 202, the third control channel 203, the fourth control channel 204, the combining branch 303, and the control combining branch 304 together constitute an integrated separation control structure of the metasurface unit. Hereinafter, in conjunction with the accompanying drawings, a detailed description will be given of how the integrated separation control structure is used to achieve the multi-bit feature of various embodiments of the metasurface unit according to the present disclosure.
[0060] 9 to 16 are equivalent circuit diagrams illustrating various implementations of a metasurface unit according to an embodiment of the present disclosure.
[0061] 9 , the first switch 103 and the second switch 107 are in reverse connection, the first control channel 201 and the second control channel 202 can be commonly connected to the radiation formation 20 , and the voltage of the radiation formation 20 is a first ground voltage greater than 0V.
[0062] In the context of this application, the term "reverse connection state" means that the connection directions of the first switch 103 and the second switch 107 connected to the radiating patch 101 are opposite. For example, as shown in FIG9 , when the ground voltage at one end connected to the first switch 103 is higher than the voltage of the radiating patch 101 connected to the other end of the first switch 103, the first switch 103 is turned on, and when the ground voltage at one end connected to the second switch 107 is higher than the voltage of the radiating patch 101 connected to the other end of the second switch 107, the second switch 107 is turned off. Conversely, when the ground voltage at one end connected to the first switch 103 is lower than the voltage of the radiating patch 101 connected to the other end of the first switch 103, the first switch 103 is turned off, and when the ground voltage at one end connected to the second switch 107 is lower than the voltage of the radiating patch 101 connected to the other end of the second switch 107, the second switch 107 is turned on. On the other hand, the term “same connection state” which is opposite to the term “reverse connection state” means that the connection directions of the first switch 103 and the second switch 107 connected to the radiation patch 101 are the same.
[0063] As shown in Figure 9, the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN transistors). Assuming that the on-state voltages of the first and second switches 103, 107 are both 1.3V, the first ground voltage is 1.3V. The first control channel 201 and the third control channel 203 form a first control loop, controlling the state changes of the first mode switching module 110. The second control channel 202 and the third control channel 203 form a second control loop, controlling the state changes of the second mode switching module 120. The control structure in the control wiring layer 50 outputs three states, 0V, 2.6V, and high impedance (i.e., floating), to the radiating patch 101 via the third control channel 203. When the control structure outputs 0V, the voltage of the radiating patch 101 is 0V, the first switch 103 is on, and the second switch 107 is off. That is, the first control loop is on and the second control loop is off, thus corresponding to the state of the metasurface unit 10. When the control structure outputs 2.6V, the voltage of the radiating patch 101 is 2.6V, the first switch 103 is off, and the second switch 107 is on. That is, the first control loop is off and the second control loop is on, thus corresponding to the state of the metasurface unit 01. When the control structure outputs a high-impedance state (that is, the third control channel 203 is floating), no loop can be formed between the first switch 103 and the second switch 107. Both the first switch 103 and the second switch 107 are off. That is, both the first control loop and the second control loop are off, thus corresponding to the state of the metasurface unit 00. The control structure outputs 0V, 2.6V, and high-impedance states, which can correspond to the three states of the metasurface units 10, 01, and 00, respectively, with a phase difference of 120° between each state.
[0064] It should be appreciated that the connection directions of the first switch 103 and the second switch 107 shown in FIG. 9 can be reversed, as long as the first switch 103 and the second switch 107 are in reverse connection.
[0065] It should also be appreciated that, for the sake of clarity, due to the symmetry of the radiating patch, FIG9 illustrates only one polarization control principle, i.e., only one third control channel 203, one first switch 103, and two second switches 107. Subsequent figures illustrate only one polarization control principle, and this will not be further described.
[0066] 10 , first switch 103 and second switch 107 are in reverse connection, and first control channel 201 and second control channel 202 are connected to different ground voltages. For example, as shown in FIG10 , first switch 103 is connected to a second ground voltage greater than 0V, and first switch 107 is connected to a ground voltage of 0V.
[0067] As shown in Figure 10 , the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN transistors). Assuming the on-state voltages of both the first and second switches 103 and 107 are 1.3V, the second ground voltage is 3.9V. The first control channel 201 and the third control channel 203 form a first control loop, controlling the state changes of the first mode switching module 110. The second control channel 202 and the third control channel 203 form a second control loop, controlling the state changes of the second mode switching module 120. The control structure in the control wiring layer 50 outputs three states, 0V, 3.9V, and high impedance (i.e., floating), to the radiating patch 101 via the third control channel 203. When the control structure outputs 0V, the voltage of radiating patch 101 is 0V, first switch 103 is on, and second switch 107 is off. That is, the first control loop is on and the second control loop is off, thus corresponding to the state of metasurface unit 10. When the control structure outputs 3.9V, the voltage of radiating patch 101 is 3.9V, first switch 103 is off, and second switch 107 is on. That is, the first control loop is off and the second control loop is on, thus corresponding to the state of metasurface unit 01. When the control structure outputs a high-impedance state (that is, third control channel 203 is floating), a loop is formed between first switch 103 and second switch 107, and both first switch 103 and second switch 107 are on. That is, both the first control loop and the second control loop are on, thus corresponding to the state of metasurface unit 11. The control structure outputs 0V, 3.9V, and high-impedance states, which can correspond to the three states of metasurface units 10, 01, and 11, respectively, with a phase difference of 120° between each state.
[0068] It should be appreciated that the connection directions of the first switch 103 and the second switch 107 shown in FIG. 10 may be reversed, as long as the first switch 103 and the second switch 107 are in reverse connection and the connected ground voltage is adjusted accordingly.
[0069] According to the implementation shown in Figures 9 and 10, the 1.5-bit feature of the metasurface unit can be realized, and only one control line (i.e., the third control channel 203 after combining) is required to achieve the ability to regulate the phase of the metasurface unit, with low cost and low power consumption.
[0070] 11 , the first switch 103 and the second switch 107 are in the same connected state, and the first control channel 201 and the second control channel 202 are respectively connected to two control ports in the control wiring layer 50 .
[0071] As shown in Figure 11, the first switch 103 and the second switch 107 are connected to the radiating patch 101 in a co-connected manner. The first control channel 201 and the third control channel 203 form a first control loop, which controls the state changes of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop, which controls the state changes of the second mode switching module 120. By respectively controlling the voltages connected to the first control channel 201, the second control channel 202 and the third control channel 203, it is possible to achieve that both the first switch 103 and the second switch 107 are disconnected, that is, both the first control loop and the second control loop are disconnected, thus corresponding to the state of the metasurface unit 00; it is possible to achieve that the first switch 103 is turned on and the second switch 107 is disconnected, that is, the first control loop is turned on and the second control loop is disconnected, thus corresponding to the state of the metasurface unit 10; it is possible to achieve that the first switch 103 is disconnected and the second switch 107 is turned on, that is, the first control loop is disconnected and the second control loop is turned on, thus corresponding to the state of the metasurface unit 01; and it is possible to achieve that both the first switch 103 and the second switch 107 are turned on, that is, both the first control loop and the second control loop are turned on, thus corresponding to the state of the metasurface unit 11.
[0072] 12 , the first switch 103 and the second switch 107 are in a reverse connection state, and the first control channel 201 and the second control channel 202 are respectively connected to the ground voltage and the control port in the control wiring layer 50; or the first control channel 201 and the second control channel 202 are respectively connected to the two control ports in the control wiring layer 50.
[0073] It should be recognized that Figure 12 shows the situation where the first control channel 201 and the second control channel 202 are respectively connected to two control ports in the control wiring layer 50, but it is also possible that one of the first control channel 201 and the second control channel 202 is connected to the ground voltage and the other of the first control channel 201 and the second control channel 202 is connected to the control port in the control wiring layer 50.
[0074] As shown in Figure 12, the first switch 103 and the second switch 107 are connected to the radiating patch 101 in reverse connection. The first control channel 201 and the third control channel 203 form a first control loop to control the state change of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop to control the state change of the second mode switching module 120. By respectively controlling the voltages connected to the first control channel 201, the second control channel 202 and the third control channel 203, it is possible to achieve that both the first switch 103 and the second switch 107 are disconnected, that is, both the first control loop and the second control loop are disconnected, thus corresponding to the state of the metasurface unit 00; it is possible to achieve that the first switch 103 is turned on and the second switch 107 is disconnected, that is, the first control loop is turned on and the second control loop is disconnected, thus corresponding to the state of the metasurface unit 10; it is possible to achieve that the first switch 103 is disconnected and the second switch 107 is turned on, that is, the first control loop is disconnected and the second control loop is turned on, thus corresponding to the state of the metasurface unit 01; and it is possible to achieve that both the first switch 103 and the second switch 107 are turned on, that is, both the first control loop and the second control loop are turned on, thus corresponding to the state of the metasurface unit 11.
[0075] It should be appreciated that the switching directions of the first switch 103 and the second switch 107 shown in FIG. 11 and FIG. 12 may be reversed.
[0076] According to the implementation shown in Figures 11 and 12, the 2-bit feature of the super-standard surface unit can be achieved, which requires two (or more) control lines and has stronger control capabilities, and is suitable for application scenarios with high performance requirements.
[0077] The embodiments shown in Figures 13 to 16 correspond to the embodiments shown in Figures 9 to 12 , respectively. The difference is that the two second switches 107 shown in Figures 9 to 12 are implemented as one second switch 107 in Figures 13 to 16 . This can be achieved by replacing any two adjacent second switches 107 of the four second switches 107 shown in Figure 3 with conductive structures (e.g., copper), while retaining the other two second switches 107. In other respects, the embodiments shown in Figures 13 to 16 are the same as or correspond to the embodiments shown in Figures 9 to 12 , respectively, and will not be further described here.
[0078] According to the metasurface unit disclosed in the present invention, by controlling the state of the switching device or the adjustable device (for example, the first switch 103 and the second switch 107), the working mode of the metasurface unit can be changed, thereby changing the phase response of the metasurface unit to the electromagnetic field to achieve the regulation of spatial electromagnetic waves. According to the metasurface unit disclosed in the present invention, there is no need to introduce additional layers and structures outside the radiation patch, and the multi-bit characteristics can be achieved while ensuring stable performance, and the loss of the metasurface unit will not deteriorate. According to the metasurface unit disclosed in the present invention, it can be applied to hot spot filling, dynamic signal transmission and beamforming in wireless networks, and is a key technology of 6G communication technology. According to the metasurface unit disclosed in the present invention, multi-bit dual-polarization spatial electromagnetic wave regulation can be achieved, and it has broad application prospects in the field of spatial channel regulation.
[0079] FIG17 is a schematic diagram showing a metasurface system according to an embodiment of the present disclosure.
[0080] An embodiment of the present disclosure also provides a metasurface system, comprising a plurality of metasurface units according to various embodiments of the present disclosure.
[0081] According to an embodiment of the present disclosure, the multiple super-surface units are arranged in a matrix, but the present disclosure is not limited to this. The specific arrangement of the multiple super-surface units can be set according to actual needs, and the present disclosure does not limit the number of the multiple super-surface units.
[0082] According to an embodiment of the present disclosure, the multiple metasurface units can work in an array manner, and the array can be controlled by a single or multiple field programmable gate arrays (FPGA), erasable programmable logic devices (EPLD), digital signal processors (DSP) and other logic chips.
[0083] According to the metasurface system disclosed in the present invention, by controlling the state of the switching devices or adjustable devices (for example, the first switch 103 and the second switch 107) of each metasurface unit, the working mode of the metasurface unit can be changed, thereby changing the phase response of the metasurface unit to the electromagnetic field to achieve the regulation of spatial electromagnetic waves. According to the metasurface system disclosed in the present invention, there is no need to introduce additional layers and structures outside the radiation patch of the metasurface unit, and the multi-bit characteristics can be achieved while ensuring stable performance, and the loss of the metasurface unit will not deteriorate. According to the metasurface system disclosed in the present invention, it can be applied to heat and blind spot compensation, dynamic signal transmission and beamforming in wireless networks, and is a key technology of 6G communication technology. According to the metasurface system disclosed in the present invention, multi-bit dual-polarization spatial electromagnetic wave regulation can be achieved, and it has broad application prospects in the field of spatial channel regulation.
[0084] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and should be interpreted only in a general illustrative sense and not for purposes of limitation. In some instances, it will be apparent to those skilled in the art that, unless otherwise expressly stated, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the scope of the present disclosure as set forth in the appended claims.
Claims
1. A metasurface unit, comprising a radiation patch layer, wherein: The radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and The state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.
2. The metasurface unit according to claim 1, wherein: The first mode switching module includes a first branch, a first switch, a second branch and a first control channel. The first branch is connected to a side of the radiation patch, the second branch is connected to the first control channel, and the first switch is connected between the first branch and the second branch.
3. The metasurface unit according to claim 2, wherein: The second mode switching module includes a third branch, a second switch, a fourth branch and a second control channel. The fourth branch is connected to the radiation patch, the third branch is connected to the second control channel, and the second switch is connected between the third branch and the fourth branch.
4. The metasurface unit according to claim 1 further comprises a radiation formation, wherein: The radiation patch layer further includes a microstrip frame, and a conductive through hole is formed between the microstrip frame and the radiation ground layer. The radiation patch is arranged as a whole in a cavity formed by the microstrip frame, the conductive through hole and the radiation stratum.
5. The metasurface unit according to claim 1 further comprises a filtering branch layer, wherein: The filter branch layer includes a first filter branch layer and a second filter branch layer which are arranged in sequence.
6. The supersurface unit according to claim 5 further includes a control wiring layer and two third control channels, the filter branch layer is arranged between the radiation patch layer and the control wiring layer, the radiation patch is connected to the control structure in the control wiring layer via the two third control channels, and the first filter branch layer and the second filter branch layer are connected to the two third control channels.
7. The metasurface unit according to claim 6, wherein: The first filter branch layer includes two first filter branches, and the second filter branch layer includes two second filter branches. The two first filter branches are respectively connected to the two third control channels, and the two second filter branches are respectively connected to the two third control channels.
8. The metasurface unit according to claim 7, wherein: The two third control channels are combined into one third control channel in the filter branch layer, and the combined third control channel is connected to a port of the control structure in the control wiring layer.
9. The metasurface unit according to claim 6 further includes a fourth control channel, wherein the radiation patch is connected to the fourth control channel in the filter branch layer via the two third control channels, and the fourth control channel is connected to a port of the control structure in the control wiring layer.
10. The metasurface unit according to claim 3, further comprising a radiation formation, wherein: The first switch and the second switch are in a reverse connection state, the first control channel and the second control channel are commonly connected to the radiation ground layer, and the voltage of the radiation ground layer is a first ground voltage greater than 0V.
11. The metasurface unit according to claim 3, wherein: The first switch and the second switch are in a reverse connection state, one of the first control channel and the second control channel is connected to a ground voltage of 0V, and the other of the first control channel and the second control channel is connected to a second ground voltage greater than 0V.
12. The metasurface unit according to claim 3 further comprises a control wiring layer, wherein: The first switch and the second switch are in a common connection state, and the first control channel and the second control channel are respectively connected to two control ports in the control wiring layer.
13. The metasurface unit according to claim 3 further comprises a control wiring layer, wherein: The first switch and the second switch are in a reverse connection state, one of the first control channel and the second control channel is connected to a ground voltage, and the other of the first control channel and the second control channel is connected to a control port in the control wiring layer; or The first control channel and the second control channel are respectively connected to two control ports in the control wiring layer.
14. A metasurface unit, comprising a radiation patch layer, a radiation ground layer, a filter branch layer, a first ground layer, a control wiring layer and a second ground layer stacked in sequence, wherein: The radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and The state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.
15. A metasurface system, comprising a plurality of metasurface units according to any one of claims 1 to 14.
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