Method for forming graphene film

Abstract

An embodiment of the present invention relates to a method for forming a graphene film on a substrate in a chamber, wherein the method may comprise the steps of: spraying a silicon-containing gas on the substrate; spraying a carbon-containing gas on the substrate and forming argon plasma; and forming argon plasma on the substrate. Therefore, according to embodiments of the present invention, the graphene film can be easily formed by a deposition method. That is, a crystalline carbon-containing film can be easily formed. In addition, a graphene film having an increased carbon content can be formed, and a graphene film having a low impurity content can be formed. In addition, a graphene film having a dense film quality can be formed.

Description

Method for forming a graphene film

[0001] The present invention relates to a method for forming a graphene film, and more particularly, to a method for forming a graphene film that can easily form a graphene film.

[0002] There are various demands for graphene films in the semiconductor, display, and solar cell fields, and plasma is used to form graphene films, and a plasma treatment method and device using plasma to form the same are required.

[0003] (Prior art document) (Patent document 1) Korean registered patent 10-1984694

[0004] The present invention provides a method for forming a graphene film, which can easily form a graphene film.

[0005] An embodiment of the present invention is a method for forming a graphene film on a substrate in a chamber, the method comprising: injecting a silicon-containing gas onto the substrate; injecting a carbon-containing gas and forming an argon plasma onto the substrate; and forming an argon plasma onto the substrate.

[0006] A method for forming a lapin film according to an embodiment of the present invention may include a step of controlling the temperature of a substrate to 200°C or more and 500°C or less.

[0007] In addition to the step of forming argon plasma on the above substrate, the plasma can be formed by including hydrogen gas.

[0008] A method for forming a lapin film according to an embodiment of the present invention may include a step of forming plasma by injecting a hydrogen-containing gas between the step of injecting the silicon-containing gas and the step of forming argon plasma and injecting a carbon-containing gas on the substrate.

[0009] The step of forming an argon plasma by injecting a carbon-containing gas on the substrate includes a step of supplying a first RF power to the chamber, and the step of forming an argon plasma on the substrate includes a step of supplying a second RF power to the chamber, wherein the first RF power may be greater than the second RF power.

[0010] In the step of forming argon plasma by injecting a carbon-containing gas on the substrate and in the step of forming argon plasma on the substrate, the argon plasma may be a plasma formed inside the chamber.

[0011] In the step of forming argon plasma by injecting a carbon-containing gas on the substrate and the step of forming argon plasma on the substrate, the argon plasma can be formed by utilizing the potential difference between the first electrode and the second electrode installed inside the chamber.

[0012] The time for the step of forming argon plasma on the substrate and injecting carbon-containing gas on the substrate may be shorter than the time for the step of forming argon plasma on the substrate.

[0013] The time for forming the carbon-containing gas injection and argon plasma on the substrate may be 2 seconds or more and 5 seconds or less, and the time for forming the argon plasma on the substrate may be more than 5 seconds and 7 seconds or less.

[0014] Between the step of injecting the gas containing the silicon and the step of supplying the first RF power to the chamber to form the first plasma, one of the steps of evacuating the chamber; and the step of evacuating the chamber while injecting a purge gas into the interior of the chamber may be performed.

[0015] A method for forming a graphene film on a substrate accommodated in a chamber, the method comprising: injecting a source gas containing silicon into the interior of the chamber; injecting a carbon-containing gas into the interior of the chamber to form a silicon carbide film on the substrate; and forming plasma into the interior of the chamber to remove silicon (Si) from the silicon carbide film.

[0016] An embodiment of the present invention provides a method for forming a graphene film on a substrate accommodated in a chamber including a first plate including a first opening and a second opening; a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of third openings arranged in an alternating manner with the first and second openings; and a turbo molecular pump (TMP), the method comprising: injecting a silicon-containing gas onto the substrate; injecting a carbon-containing gas and forming an argon plasma onto the substrate; and forming an argon plasma onto the substrate.

[0017] In addition to the step of forming argon plasma on the above substrate, the plasma can be formed by including hydrogen gas.

[0018] The chamber including the above turbomolecular pump (TMP) can be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0019] The first opening is connected from a gas storage unit, and one or more gases can be temporarily injected from the gas storage unit to the first opening.

[0020] The above gas storage unit includes a pile-up tank, and the pile-up tank can be filled with one or more gases and temporarily inject the filled gases.

[0021] An embodiment of the present invention is a method for forming a graphene film on a substrate in a chamber, the method including: injecting a silicon-containing gas onto the substrate; injecting a carbon-containing gas and forming an argon plasma onto the substrate; and forming a hydrogen plasma onto the substrate.

[0022] A method for forming a graphene film according to an embodiment of the present invention may include a step of controlling the temperature of the substrate to 200°C or more and 500°C or less.

[0023] An embodiment of the present invention is a method for forming a graphene film on a substrate in a chamber,

[0024] It may include a step of spraying a gas containing silicon onto the substrate; a step of spraying a carbon-containing gas and a hydrogen-containing gas onto the substrate to form a first plasma; and a step of spraying a hydrogen-containing gas onto the substrate to form a second plasma.

[0025] It may include a step of controlling the temperature of the above substrate to more than 500°C and less than 1200°C.

[0026] The step of forming the first plasma includes a step of supplying a first RF power to the chamber, and the step of forming the second plasma includes a step of supplying a second RF power to the chamber, wherein the first RF power may be greater than the second RF power.

[0027] In spraying carbon-containing gas and hydrogen-containing gas on the above substrate, separately prepared carbon-containing gas and hydrogen-containing gas may be sprayed, or a gas containing both carbon and hydrogen may be sprayed.

[0028] According to embodiments of the present invention, a graphene film can be easily formed using a deposition method. That is, a crystalline carbon-containing film can be easily formed.

[0029] In addition, a graphene film with increased carbon content can be formed, a graphene film with a low impurity content can be formed, and a graphene film with a dense film quality can be formed.

[0030] FIG. 1 is a drawing illustrating a state in which a graphene film is formed on a substrate by a method according to one or more embodiments.

[0031] Figures 2 (a) to (c) are process diagrams conceptually illustrating a method of forming a graphene film on a substrate according to one or more embodiments of the present invention.

[0032] FIG. 3 is a schematic diagram of one or more embodiments of a substrate processing device for forming a graphene film according to one or more embodiments of the present invention.

[0033] FIGS. 4(a) to 4(d) are process diagrams conceptually illustrating a method of forming a graphene film on a substrate by a method according to one or more embodiments of one or more embodiments of the present invention.

[0034] FIG. 5 is a schematic diagram of one or more embodiments of a substrate processing apparatus capable of forming a graphene film according to one or more embodiments of the present invention.

[0035] FIG. 6 is a schematic perspective view of a substrate support unit in a substrate processing device of one or more embodiments.

[0036] FIG. 7 is a plan view of a substrate support unit in a substrate processing device of one or more embodiments.

[0037] FIG. 8 is a schematic cross-sectional side view of a spray unit in a substrate processing device of one or more embodiments.

[0038] FIG. 9 is a schematic plan view of a spray unit in a substrate processing device of one or more embodiments.

[0039] FIG. 10 is a schematic plan view of one or more embodiments of a spray unit in a substrate processing device of one or more embodiments.

[0040] FIG. 11 is a flowchart schematically illustrating a method of forming a graphene film according to one or more embodiments of the present invention using a substrate processing device of one or more embodiments.

[0041] FIG. 12 is a schematic cross-sectional side view of a spray unit in a substrate processing device of one or more embodiments.

[0042] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. The drawings may be exaggerated to illustrate one or more embodiments of the present invention.

[0043] FIG. 1 is a drawing illustrating a state in which a graphene film is formed on a substrate by a method according to one or more embodiments of the present invention.

[0044] A graphene film (20) can be formed on a substrate (10). That is, a graphene film (20) can be formed on a substrate (10) by a deposition method.

[0045] The substrate (10) may be either a wafer or glass. If the substrate (10) is a wafer, the wafer may be, for example, a silicon (Si) wafer. The graphene film (20) may be formed through a deposition process. The graphene film (20) may refer to a crystalline carbon-containing film.

[0046] Figures 2 (a) to (c) are process diagrams conceptually illustrating a method for forming a graphene film on a substrate using a method according to the first embodiment of the present invention.

[0047] A method for forming a graphene film (20) may include a step of forming a silicon-containing film (21) on a substrate (10) by injecting a source gas containing silicon (Si) toward the substrate (10), a step of forming a first plasma while injecting a gas containing carbon (C) to form a graphene film (20), and a step of forming a second plasma.

[0048] The step of forming a silicon-containing film (21) may be a source gas injection step, and the step of forming a first plasma while injecting a carbon-containing gas may be a 'first plasma forming step'. In addition, hydrogen atoms (H), hydrogen gas (H2), and activated hydrogen atoms (H * ), hydrogen ions (H + ), argon atom (Ar), argon gas (Ar), activated argon atom (Ar * ), argon ion (Ar + ) can form a first plasma and a second plasma by including at least one of the following.

[0049] 'After the source gas injection step, after the first plasma formation step, and after the second plasma formation step' can be performed as one graphene film formation cycle (CY). That is, the method for forming a graphene film includes a graphene film formation cycle (CY), and the graphene film formation cycle (CY) can include the source gas injection step, the first plasma formation step, and the second plasma formation step as a continuous or discontinuous cycle (CY).

[0050] In addition, the method for forming a graphene film may further include at least one of an exhaust step (first exhaust step) performed between the source gas injection step and the first plasma formation step, and an exhaust step (second exhaust step) performed after the first plasma formation step. Here, the exhaust may include at least one or more purge gas injections and pumping of impurities and residual gases, etc., inside the substrate processing device into which the substrate (10) is introduced or inside the chamber which is a component of the substrate processing device, and the pumping may be performed including a turbomolecular pump (TMP, 100-1). In addition, a turbomolecular pump (TMP, Purbomolecular pump) (100-1) may be connected and installed between the exhaust unit and the chamber. In addition, the pressure inside the chamber can be quickly lowered through the turbomolecular pump, and impurities, etc. inside can be quickly exhausted, thereby enabling a high vacuum process. Using a turbo molecular pump (100-1), the pressure can be controlled to a high vacuum of 10 mTorr or more and 50 mTorr or less.

[0051] When the method for forming a graphene film includes an exhaust step, 'after the source gas injection step, after the first exhaust step, after the first plasma formation step, after the second plasma formation step, and after the second exhaust step' can be considered as one graphene film formation cycle (CY). That is, the method for forming a graphene film includes a graphene film formation cycle (CY), and the graphene film formation cycle (CY) can include a source gas injection step, a first exhaust step, a first plasma formation step, a second plasma formation step, and a second exhaust step. At this time, at least one of the first exhaust step and the second exhaust step may be omitted in the graphene film formation cycle (CY).

[0052] And, the graphene film formation cycle (CY) can be performed n times (n: 1, 2, 3, …). That is, the step of forming the graphene film can include one (n=1) or two or more (n ≥ 2) graphene film formation cycles (CY). Here, two or more times can mean multiple times.

[0053] FIG. 3 is a schematic diagram of one or more embodiments of a substrate processing device for forming a graphene film according to one or more embodiments of the present invention.

[0054] Hereinafter, a substrate processing device of one or more embodiments illustrated in FIG. 3 will be described.

[0055] Referring to FIG. 3, the substrate processing device may include a chamber (1000), a support (2000) installed within the chamber (1000) to support a substrate (10), first and second gas injection units (3000a, 3000b) installed within the chamber (1000) so as to face the support (2000), a gas supply unit (4000) for providing process gas to the first and second gas injection units (3000a, 3000b), an antenna (6100) having a coil for inducing an electric field within the chamber (1000) for plasma generation, and a power supply unit (6200) connected to the antenna (6100).

[0056] In addition, the substrate processing device may include a heating unit (5000) installed to face the support (2000), a driving unit (7000) that raises and lowers or rotates the support (2000), and an exhaust unit (8000) that exhausts gas and impurities inside the chamber (1000).

[0057] The chamber (1000) may be a cylinder shape having an internal space, and may be, for example, a dome shape as illustrated in FIG. 3. More specifically, the chamber (1000) may include a chamber body (1100), an upper body (1200) installed on the upper side of the chamber body (1100), and a lower body (1300) installed on the lower side of the chamber body (1100). The chamber body (1100) may be a cylinder shape with an open upper and lower side, and the upper body (1200) may be installed to cover the upper opening of the chamber body (1100), and the lower body (1300) may be installed to cover the lower opening of the chamber body (1100). In addition, the upper body (1200) may be a dome shape having a slope whose height increases toward the center in the width direction thereof. In addition, the lower body (1300) may have a dome shape with a slope whose height decreases toward the center in the width direction. Each of the chamber (1000), i.e., the chamber body (1100), the upper body (1200), and the lower body (1300) may be made of a transparent material that allows light to pass through, for example, quartz.

[0058] The gas supply unit (4000) may include a source gas supply unit (4100) for supplying a source gas containing silicon (Si), a carbon-containing gas supply unit (4200) for supplying a carbon-containing gas, a hydrogen-containing gas supply unit (4300) for supplying a hydrogen-containing gas, and an argon gas supply unit (4400) for supplying argon gas. In addition, the gas supply unit (4000) may further include a purge gas supply unit for supplying a purge gas.

[0059] Additionally, the gas supply unit (4000) may include a first transport pipe (4500a) connecting a source gas supply unit (4100), a carbon-containing gas supply unit (4200) and a first gas injection unit (3000a), a hydrogen-containing gas supply unit (4300), and a second transport pipe (4500b) connecting an argon gas supply unit (4400) and a second gas injection unit (3000b).

[0060] In addition, the gas supply unit (4000) may include a plurality of first connection pipes (4600a) connecting the source gas supply unit (4100), the carbon-containing gas supply unit (4200) and the first transport pipe (4500a), a valve installed in each of the plurality of first connection pipes (4600a), a plurality of second connection pipes (4600b) connecting the hydrogen-containing gas supply unit (4300) and the argon gas supply unit (4400) and the second transport pipe (4500b), and a valve installed in each of the plurality of second connection pipes (4600b).

[0061] And, using the substrate processing device described above, a graphene film (20) can be formed on the substrate.

[0062] Hereinafter, the graphene film formation cycle (CY) will be described in more detail with reference to (a) to (c) of FIG. 2 and FIG. 3.

[0063] First, a substrate (10) is introduced into the chamber (1000) and the substrate (10) is placed on a support (2000). Then, the chamber (1000) is heated using a heating unit (5000). At this time, the substrate (10) in the chamber (1000) is heated to a temperature of 200°C to 500°C (200°C or higher and 500°C or lower). Then, the temperature of the substrate is maintained at 200°C to 500°C during the process.

[0064] When the temperature of the substrate (10) is heated to 200°C to 500°C, a gas (source gas) containing silicon (Si) is injected toward the substrate (10). That is, the source gas contained in the source gas supply unit (4100) is supplied to the first gas injection unit (3000a) through the first connection pipe (4600a) and the first transfer pipe (4500a). Accordingly, the source gas is injected from the first gas injection unit (3000a). That is, the source gas containing silicon (Si) is injected into the interior of the chamber (1000) into which the substrate (10) is introduced. Here, the source gas containing silicon (Si) may be, for example, SiH2Cl2 (Dichlorosilane; DCS) gas. Of course, the source gas containing silicon (Si) is not limited to the above-described materials, and various gases containing silicon (Si) may be used.

[0065] When a source gas is injected toward the substrate (10), the source gas is deposited or adsorbed on one surface of the substrate (10). Accordingly, a silicon (Si)-containing film (21) is deposited on the substrate (10) as shown in (a) of Fig. 2. More specifically, when SiH2Cl2 gas is used as the source gas, a SiH2Cl2 layer can be formed on the substrate (10). Here, the silicon-containing film (21) can be referred to as a single layer or atomic layer containing silicon.

[0066] When the step of injecting the source gas is completed, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) into which the substrate (10) is introduced (primary exhaust). In other words, the interior of the chamber (1000) is pumped. Here, the exhaust unit (8000) may be a means including a pipe connected to the chamber (1000) and a pump connected to the pipe.

[0067] In the above, it has been described that the interior of the chamber (1000) is exhausted after the step of injecting the source gas is completed. However, this is not limited to this, and the chamber (1000) may be exhausted while injecting a purge gas into the interior of the chamber (1000) after the step of injecting the source gas is completed.

[0068] When the first exhaust is completed, a carbon (C)-containing gas is injected toward the silicon-containing film (21). That is, the carbon-containing gas received in the carbon-containing gas supply unit (4200) is supplied to the first gas injection unit (3000a) through the first connection pipe (4600a) and the first transfer pipe (4500a). Accordingly, the carbon-containing gas is injected from the first gas injection unit (3000a). That is, the carbon (C)-containing gas is injected into the interior of the chamber (1000) into which the substrate (10) is introduced. The carbon-containing gas may be, for example, a gas containing methane (CH4) or a methane (CH4) gas. Of course, the carbon-containing gas is not limited to the above-described example, and various gases containing carbon (C) may be used.

[0069] And, while injecting the carbon-containing gas, argon gas is injected into the interior of the chamber (1000) to form a first plasma. The argon gas can be injected into the interior of the chamber (1000) by supplying the argon gas contained in the argon gas supply unit (4400) to the second gas injection unit (3000b) through the second connection pipe (4600b) and the second transfer pipe (4600a).

[0070] While injecting carbon-containing gas and argon gas into the interior of the chamber (1000), power or electric power is applied to the antenna (6100) using the power supply (6200). At this time, the power applied to the antenna (6100) may be RF (Radio Frequency) RF power (hereinafter, first RF power). In addition, the first RF power applied to the antenna (6100) may be 600 W to 900 W, and the first RF power may be 8.5 mW to 12.7 mW per unit area of ​​the substrate. In addition, the time for forming the first plasma may be shorter than the time for forming the second plasma that is formed later. That is, the time for forming the first plasma may be 2 seconds to 5 seconds (2 seconds or more and 5 seconds or less). That is, the first plasma is formed for 2 seconds to 5 seconds.

[0071] Here, since the antenna (6100) is connected to the chamber (1000), applying the first RF power to the antenna (6100) may mean applying the first RF power to the chamber (1000).

[0072] In this way, when carbon-containing gas and argon gas are injected into the interior of the chamber (1000) and a first RF power is applied to the antenna (6100), a first plasma can be formed inside the chamber (1000). At this time, the first plasma formed inside the chamber (1000) can be argon plasma.

[0073] When a carbon-containing gas is injected, carbon (C) can be deposited on the silicon-containing film (21). In addition, when a first plasma is formed while injecting the carbon-containing gas, the amount of carbon (C) deposited or bonded on the silicon-containing film (21) can be increased. That is, as the carbon (C)-containing gas is activated by the first plasma formed using argon (Ar) gas, the deposition or bonding of carbon (C) on the silicon-containing film (10) can be promoted. Therefore, a graphene film (20) having a large amount of carbon (C) can be formed. That is, a crystalline carbon-containing film having a large amount of carbon (C) can be formed.

[0074] Since carbon (C) is deposited by spraying a carbon-containing gas onto a silicon-containing film (21), the graphene film (20) may contain silicon (Si) in addition to carbon (C). That is, when plasma is not formed, carbon (C) is bonded or deposited onto the silicon-containing film (21), so the film formed by spraying a carbon-containing gas toward the silicon-containing film (21) may be a silicon carbide (SiC) film. However, when a predetermined amount or more of silicon (Si) is included in the carbon-containing film, it is difficult to form a crystalline carbon-containing film, i.e., a graphene film (20).

[0075] In the embodiment, argon plasma (first plasma) is formed while injecting a carbon-containing gas, and the temperature of the substrate is controlled to 200°C to 500°C during the process. Accordingly, among carbon (C) and silicon (Si) contained in the graphene film (20), silicon (Si) can be separated from the graphene film (20). That is, not only carbon (C) but also silicon (Si) may be contained on the graphene film, and silicon (Si) contained in the graphene film (20) can be sublimated and removed by the temperature of the substrate (200°C to 500°C) and argon plasma (first plasma).

[0076] In the embodiment, a first RF power is applied to the antenna (6100) to form the first plasma. Here, the first RF power is 600 W to 900 W or less, and the first RF power may be 8.5 mW to 12.7 mW or less per unit area of ​​the substrate. In addition, the second RF power may be 300 W to 500 W or less, and the second RF power may be 4.2 mW to 7.1 mW or less. This may be a larger power than the second RF power applied in the step of forming the second plasma. In this way, by controlling the first RF power, the amount of carbon (C) deposited on the silicon-containing film (21) can be increased. In other words, a graphene film (20) containing a large amount of carbon (C) can be formed.

[0077] Meanwhile, when the temperature of the substrate (10) is less than 200°C or the first RF power is less than 8.5 mW per unit area of ​​the substrate, the amount of carbon contained in the graphene film (20) may be small. In addition, when the temperature of the substrate (10) is less than 200°C or the first RF power is less than 8.5 mW per unit area of ​​the substrate, the amount of residual silicon (Si) may be large, making it difficult to form the graphene film (20). That is, a crystalline carbon-containing film may not be formed. In other words, crystallization of the carbon-containing film may be difficult. Conversely, when the temperature of the substrate (10) exceeds 500°C or the first RF power exceeds 12.7 mW per unit area of ​​the substrate, there is a problem of increased temperature rise of the substrate or increased power consumption for plasma formation. In addition, a film (subfilm) formed under the graphene film (20) may be damaged by heat.

[0078] When the step of forming the first plasma is completed, a second plasma is formed inside the chamber (1000). The second plasma can be formed by applying a second RF power to the antenna (6100) using the power supply (6200) while injecting an argon-containing gas into the inside of the chamber (1000).

[0079] A second RF power is applied to the antenna (6100) using the power supply unit (6200) while injecting a hydrogen-containing gas into the interior of the chamber (1000) according to a method according to one or more embodiments. More specifically, the hydrogen-containing gas contained in the hydrogen gas supply unit (4300) is supplied to the second gas injection unit (3000b) through the second connection pipe (4600b) and the second transfer pipe (4500b). Accordingly, the hydrogen-containing gas is injected from the second gas injection unit (3000b). That is, the hydrogen-containing gas is injected into the interior of the chamber (1000). Here, the hydrogen-containing gas may be, for example, 'hydrogen gas'. Of course, the hydrogen-containing gas is not limited to 'hydrogen gas', and various gases containing hydrogen may be used. Then, the second RF power is applied to the antenna (6100) using the power supply unit (6200). At this time, a second RF power smaller than the first RF power applied when forming the first plasma is applied to the antenna (6100). Here, the second RF power may be 4.2 mW to 7.1 mW per unit area of ​​the substrate. The second plasma may be formed for a longer time than the time for forming the first plasma. That is, the time for forming the second plasma may be more than 5 seconds and less than 7 seconds. That is, the second plasma is formed for a time longer than 5 seconds and less than 7 seconds.

[0080] In one or more embodiments, when the step of forming the first plasma is completed, a second plasma is formed inside the chamber (1000). The second plasma can be formed by applying a second RF power to the antenna (6100) using the power supply (6200) while injecting a hydrogen-containing gas and an argon-containing gas together into the interior of the chamber (1000).

[0081] Here, since the antenna (6100) is connected to the chamber (1000), applying the second RF power to the antenna (6100) may mean applying the second RF power to the chamber (1000).

[0082] When a hydrogen-containing gas is injected into the interior of the chamber (1000) in this way and a second RF power is applied to the antenna (6100), a second plasma can be formed inside the chamber (1000), and the second plasma can be at least hydrogen plasma formed by discharging the hydrogen-containing gas. Accordingly, the graphene film (20) can be exposed to the second plasma (hydrogen plasma). When the graphene film (20) is exposed to the second plasma, impurities contained in the graphene film (20) can be removed, and the graphene film (20) can be densified. That is, by forming the second plasma by adjusting the second RF power to 4.2 mW to 7.1 mW or less per unit area of ​​the substrate, impurities contained in the graphene film (20) can be removed, and the graphene film can be densified. Therefore, a dense amorphous graphene film (20) with little or no impurity content is formed.

[0083] The above description describes the injection of a hydrogen-containing gas when forming a second plasma. However, this is not limited to this, and the second plasma can be formed by injecting a hydrogen-containing gas and argon gas. In other words, the second plasma can be formed by discharging a hydrogen-containing gas and argon gas.

[0084] Meanwhile, when forming the second plasma, if the second RF power is less than 4.2 mW per unit area of ​​the substrate (10), the amount of impurities removed from the graphene film (20) may be small, or a graphene film that is not densified may be formed. In addition, if the second RF power exceeds 7.1 mW per unit area of ​​the substrate (10), there may be a problem of increased power consumption for plasma formation, and the underlying film formed at the bottom of the graphene film (20) may be damaged by heat.

[0085] Afterwards, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) into which the substrate (10) is introduced (secondary exhaust).

[0086] A process including the source gas injection step, the first exhaust step, the first plasma step, the second plasma step, and the second exhaust step as described above can be considered as one graphene film formation cycle (CY). That is, a cycle (C) for forming a graphene film can include 'source gas injection step - first exhaust step - first plasma formation step - second plasma formation step - second exhaust step'. In addition, the graphene film formation cycle (CY) can be performed once or more times continuously to form a graphene film (20) having a target thickness.

[0087] The method for forming a graphene film described above includes an exhaust step. However, the method is not limited thereto, and the method for forming a graphene film may include a purge step, and the exhaust and purge of the chamber may be performed simultaneously. That is, the method for forming a graphene film may further include at least one of an exhaust and purge step performed between the source gas injection step and the first plasma formation step, and an exhaust and purge step performed after the first plasma formation step.

[0088] In the first embodiment, it was described that the temperature of the substrate (10) was controlled or maintained at a temperature of 200°C to 500°C while forming the graphene film (20) inside the chamber (1000), thereby forming the graphene film (20). However, the present invention is not limited thereto, and the graphene film (20) may be formed by controlling the temperature of the substrate (10) to a temperature exceeding 500°C and lower than 1200°C.

[0089] Hereinafter, with reference to (a) to (c) of FIG. 2 and FIG. 3, a method for forming a graphene film (20) on a substrate using a method according to a second embodiment will be described. At this time, any content overlapping with that described in the first embodiment will be omitted or briefly described.

[0090] First, a substrate (10) is introduced into the chamber (1000) and the substrate (10) is placed on a support (2000). Then, the chamber (1000) is heated using a heating unit (5000). At this time, the substrate (10) introduced into the chamber (1000) is heated so that the temperature thereof exceeds 500°C and is lower than 1200°C. Then, the temperature of the substrate (10) is maintained at higher than 500°C and lower than 1200°C during the process.

[0091] When the temperature of the substrate (10) exceeds 500°C and is lower than 1200°C, a source gas containing silicon (Si) is injected toward the substrate (10). Accordingly, a silicon (Si)-containing film (21) is formed on the substrate (10) as shown in (a) of Fig. 2.

[0092] Next, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) into which the substrate (10) is introduced (primary exhaust).

[0093]

[0094] When the first exhaust is completed, a first RF power is applied to the antenna (6100) while injecting a carbon (C)-containing gas and a hydrogen (H)-containing gas into the chamber, thereby forming a first plasma inside the chamber (1000). At this time, the first RF power is 600 W to 900 W or less, and the first RF power may be 8.5 mW to 12.7 mW or less per unit area of ​​the substrate. In this way, when the first RF power is applied to the antenna (6100) while injecting a carbon (C)-containing gas and a hydrogen (H)-containing gas, the gas is discharged and a first plasma is formed. Here, the first plasma may be at least a hydrogen plasma formed by discharging a hydrogen-containing gas.

[0095] In the above, the injection of a hydrogen-containing gas to form a first plasma has been described. However, this is not limited to this, and the first plasma can be formed by further injecting argon gas in addition to the hydrogen-containing gas into the chamber (1000).

[0096] When carbon-containing gas and hydrogen-containing gas are sprayed, carbon (C) can be deposited on the silicon-containing film (21). In addition, when hydrogen plasma (first plasma) is formed as described above while spraying the carbon-containing gas and hydrogen-containing gas, the amount of carbon (C) deposited or bonded on the silicon-containing film (21) can be increased. That is, the formation of the first plasma can promote the deposition or bonding of carbon (C) on the silicon-containing film (10). Therefore, a graphene film (20) having a large amount of carbon (C) can be formed.

[0097] And, while spraying a carbon-containing gas, hydrogen plasma (first plasma) is formed, and the temperature of the substrate is controlled to be more than 500℃ and less than 1200℃ during the process. Accordingly, among carbon (C) and silicon (Si) contained in the graphene film (20), silicon (Si) can be separated from the graphene film (20). That is, the graphene film deposited on the silicon-containing film may contain not only carbon (C) but also silicon (Si), and the silicon (Si) contained in the graphene film (20) can be sublimated and removed by the temperature of the substrate (more than 500℃ and 1200℃) and the hydrogen plasma (first plasma). In addition, in the embodiment, when forming the first plasma, a first RF power (8.5mW to 12.7mW per unit area of ​​the substrate) is applied to the antenna (6100). Accordingly, a graphene film (20) having a high carbon (C) content can be formed. That is, a high-purity graphene film (20) can be formed.

[0098] Meanwhile, when the temperature of the substrate (10) is 500°C or lower or the first RF power is less than 8.5 mW per unit area of ​​the substrate, the amount of carbon contained in the graphene film (20) may be small. In addition, when the temperature of the substrate (10) is 500°C or lower or the first RF power is less than 8.5 mW per unit area of ​​the substrate, the amount of residual silicon (Si) may be large, making it difficult to form the graphene film (20). That is, it may be difficult to form a crystalline carbon-containing film. Conversely, when the temperature of the substrate (10) exceeds 1200°C or the first RF power exceeds 12.7 mW per unit area of ​​the substrate, there is a problem that the temperature of the substrate (10) increases or the power consumption for plasma formation increases. In addition, the film (subfilm) formed under the graphene film (20) may be damaged by heat.

[0099] Next, a second plasma is formed inside the chamber (1000). That is, while injecting a hydrogen-containing gas into the inside of the chamber (1000), a second RF power is applied to the antenna (6100) using the power supply (6200). Accordingly, a second plasma, which is a hydrogen plasma, is formed inside the chamber (1000). At this time, in addition to the hydrogen-containing gas, argon gas may also be injected into the inside of the chamber (1000). In addition, when applying the second RF power to the antenna (6100), the second RF power may be 300 W to 500 W or less, and the second RF power may be 4.2 mW to 7.1 mW or less.

[0100] When hydrogen plasma (second plasma) is formed, the graphene film (20) can be exposed to the hydrogen plasma (second plasma). When the graphene film (20) is exposed to the second plasma, impurities contained in the graphene film (20) can be removed, and the graphene film (20) can be densified. That is, the second RF power is 300 W to 500 W or less, and the second RF power is adjusted to 4.2 mW to 7.1 mW or less to form the second plasma, thereby removing impurities contained in the graphene film (20) and densifying the graphene film. Therefore, a densified graphene film (20) having little or no impurity content is formed.

[0101] Meanwhile, when forming the second plasma, if the second RF power is less than 4.2 mW per unit area of ​​the substrate (10), the amount of impurities removed from the graphene film (20) may be small, or a graphene film that is not densified may be formed. In addition, if the second RF power exceeds 7.1 mW per unit area of ​​the substrate (10), there may be a problem of increased power consumption for plasma formation, and the underlying film formed at the bottom of the graphene film (20) may be damaged by heat.

[0102] Afterwards, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) into which the substrate (10) is introduced (secondary exhaust).

[0103] The process including the source gas injection step, the first exhaust step, the first plasma step, the second plasma step, and the second exhaust step as described above can be performed as one graphene film formation cycle (CY). In addition, the graphene film formation cycle (CY) can be performed once or more times consecutively to form a graphene film (20) having a target thickness.

[0104] In the second embodiment described above, in the step of forming the first plasma while injecting the carbon-containing gas, it was described that separately prepared carbon-containing gas and hydrogen-containing gas were injected into the interior of the chamber (1000). However, the present invention is not limited thereto, and a gas containing both carbon (C) and hydrogen (H) may also be injected. For example, a gas containing methane (CH4) or methane (CH4) gas may be injected into the interior of the chamber (1000). Of course, the gas containing both carbon and hydrogen is not limited to the above-described example, and various gases containing carbon (C) and hydrogen (H) may be used.

[0105] Figures 4 (a) to (d) are process diagrams conceptually illustrating a method of forming a graphene film on a substrate using one or more methods according to the first embodiment of the present invention.

[0106] A graphene film formation cycle (CY) according to one or more embodiments may further include a plasma formation step (hereinafter, a third plasma formation step) between the source gas injection step and the first plasma formation step, compared to the first embodiment. More specifically, the graphene film formation cycle (CY) according to one or more embodiments may further include a step of forming a third plasma between the source gas injection step and the first exhaust step. That is, the graphene film formation cycle (CY) according to one or more embodiments may include 'source gas injection step - third plasma formation step - first exhaust step - first plasma formation step - second plasma formation step - second exhaust step'.

[0107] The first plasma may be a plasma formed using argon gas, and the second and third plasmas may be plasma formed using a hydrogen-containing gas. In addition, the temperature of the substrate (10) may be 200°C to 500°C.

[0108] In the graphene film formation cycle (CY), at least one of the first exhaust step and the second exhaust step may be omitted. In addition, the graphene film formation cycle (CY) as described above may be performed n times (n: 1, 2, 3, …). That is, the step of forming the graphene film may include one (n=1) or two or more (n ≥ 2) graphene film formation cycles (CY). Here, two or more times may mean multiple times.

[0109] Meanwhile, the source gas may contain impurities other than silicon (Si), and thus the silicon-containing film may contain impurities. In addition, the quality of the graphene film (20) may be degraded by the impurities contained in the silicon-containing film.

[0110] Accordingly, in one or more embodiments, a silicon-containing film (21) is formed on a substrate (10) by injecting a source gas, and then a third plasma is formed to remove impurities from the silicon-containing film (21). The third plasma may be a plasma formed using a hydrogen-containing gas, and the hydrogen-containing gas may be, for example, hydrogen gas. That is, the third plasma may be a hydrogen plasma.

[0111] When a third plasma (hydrogen plasma) is formed after forming a silicon-containing film (21), the silicon-containing film (21) is exposed to hydrogen plasma. At this time, the silicon-containing film (21) and hydrogen plasma react, so that impurities can be separated or removed from the silicon-containing film (21). Therefore, the quality of the graphene film (20) can be improved.

[0112] Argon gas can be used together with hydrogen-containing gas to form a third plasma. Specifically, the third plasma can be formed by injecting hydrogen-containing gas and argon gas, and then discharging the hydrogen-containing gas and argon gas. Using argon gas in addition to hydrogen-containing gas can produce a plasma with even higher energy.

[0113] In the above, it has been described that one or more embodiments including a process for forming a third plasma are one or more embodiments of the first embodiment. However, the present invention is not limited thereto, and one or more embodiments including a process for forming a third plasma can be used as one or more embodiments of the second embodiment. That is, in the second embodiment in which a first plasma (hydrogen plasma) is formed by injecting a hydrogen-containing gas when injecting a carbon-containing gas, a step for forming plasma (a third plasma forming step) can be further added between the source gas injecting step and the first plasma forming step. At this time, the third plasma can be formed using a hydrogen-containing gas, or can be formed using a hydrogen-containing gas and an argon gas, and the temperature of the substrate (10) can be more than 500°C and less than 1200°C.

[0114] The substrate processing device for forming a graphene film (20) is not limited to the first substrate processing device illustrated in FIG. 3. The graphene film (20) may be formed using one or more of the substrate processing devices illustrated in FIGS. 5 to 10.

[0115] FIG. 5 is a schematic diagram of one or more embodiments of a substrate processing apparatus capable of forming a graphene film according to embodiments of the present invention. FIG. 6 is a schematic perspective view of a substrate support unit in a substrate processing apparatus according to one or more embodiments. FIG. 7 is a plan view of a substrate support unit in a substrate processing apparatus according to one or more embodiments. FIG. 8 is a schematic side cross-sectional view of a spray unit in a substrate processing apparatus according to one or more embodiments. FIG. 9 is a schematic plan view of a spray unit in a substrate processing apparatus according to one or more embodiments.

[0116] Hereinafter, one or more embodiments of a substrate processing device capable of forming a graphene film will be described with reference to FIGS. 5 to 9. Here, one or more embodiments of a substrate processing device capable of forming a graphene film using the method according to the first embodiment will be described as an example.

[0117] Referring to FIG. 5, a substrate processing device (1) of one or more embodiments performs a process on a substrate (10). The substrate (10) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing device (1) of one or more embodiments may perform a deposition process for depositing a thin film on the substrate (10). Of course, the substrate processing device (1) of one or more embodiments may also perform an etching process, etc., for removing a portion of the thin film deposited on the substrate (10).

[0118] A substrate processing device (1) of one or more embodiments may include a chamber (2), a substrate support unit (3), an injection unit (4), a gas storage unit (40a), and a power supply unit (40b). In addition, although not shown, a heater capable of controlling the temperature of at least one of the chamber (2) and the substrate support unit (3) may be installed in at least one of the chamber (2) and the substrate support unit (3).

[0119] Referring to FIG. 5, the chamber (2) can provide a processing space (SP). A process for the substrate (10) can be performed in the processing space (SP). Accordingly, the processing space (SP) can be referred to as a 'process space'. The processing space (SP) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (SP) can be coupled to the chamber (2). The substrate support unit (3) and the injection unit (4) can be arranged inside the chamber (2).

[0120] Referring to FIGS. 5 to 7, the substrate support unit (3) supports the substrate (10). The substrate support unit (3) can support a plurality of substrates (10). Accordingly, the substrate processing device (1) of one or more embodiments can perform a process on a plurality of substrates (10) at a time. The substrate support unit (3) can be coupled to the chamber (2). The substrate support unit (3) can be placed inside the chamber (2).

[0121] The substrate support member (3) may include a support surface (31). The support surface (31) may be a surface of the substrate support member (3) arranged to face the injection member (4). When the substrate support member (3) is arranged below the injection member (4), the support surface (31) may correspond to the upper surface of the substrate support member (3). The substrates (10) may be supported on the support surface (31).

[0122] The substrate support member (3) can support the substrates (10) in an outer region (33) disposed outside the central region (32). The outer region (33) can be disposed to surround the central region (32). Accordingly, the central region (32) can be disposed inside the outer region (33). When the central region (32) is formed in a circular shape, the outer region (33) can be formed in a circular ring shape surrounding the central region (32). The substrates (10) can be disposed to be spaced apart from each other along the outer region (33). In this case, the substrates (10) can be supported on the support surface (31) so as to be spaced apart from each other at the same angle with respect to the central axis (30) of the substrate support member (3) in the outer region (33). When the substrate support part (3) is rotated during the above process, the substrate support part (3) can be rotated around the central axis (30). When the support surface (31) is formed in a circular shape, the central axis (30) may correspond to the center of the support surface (31). Meanwhile, since the substrates (10) are supported on the support surface (31) in the outer region (33), the substrates (10) are not positioned in the central region (32). When the central region (32) is formed in a circular shape, the diameter of the central region (32) may be implemented to be larger than the diameter (D, illustrated in FIG. 7) of the substrate (10) and smaller than twice the diameter (D) of the substrate (10). The diameter of the central region (32) may also be implemented to be smaller than the diameter (D) of the substrate (10).

[0123] The gas storage unit (40a) stores gas and supplies the gas to the injection unit (4). That is, the gas storage unit (40a) stores gas for forming a graphene film (20) according to embodiments of the present invention and supplies the gas to the injection unit (4).

[0124] Although one gas storage unit (40a) is illustrated in Fig. 5, a plurality of gas storage units may be provided. That is, the gas storage unit (40a) may include a gas storage unit storing silicon-containing gas, a gas storage unit storing carbon-containing gas, a gas storage unit storing argon gas, and a gas storage unit storing hydrogen-containing gas.

[0125] Referring to FIGS. 5 to 8, the injection unit (4) injects gas toward the substrate support unit (3). The injection unit (4) can inject gas toward the support surface (31). The injection unit (4) can be connected to a gas storage unit (40a). In this case, the injection unit (4) can inject gas supplied from the gas storage unit (40a) toward the substrate support unit (3). That is, the injection unit (4) injects silicon-containing gas, carbon-containing gas, argon gas, and hydrogen-containing gas provided from the gas storage unit (40a) toward the substrate support unit (3).

[0126] The above-mentioned injection unit (4) may be arranged inside the chamber (2). The injection unit (4) may be arranged to face the substrate support unit (3). The injection unit (4) may be arranged on the upper side of the substrate support unit (3). The processing space (SP) may be arranged between the injection unit (4) and the substrate support unit (3). The injection unit (4) may be coupled to a lid (not shown). The lid may be coupled to the chamber (2) so as to cover the upper portion of the chamber (2).

[0127] The above-mentioned injection unit (4) can inject gas only toward the outer region (33). In this case, the injection unit (4) is implemented so as not to inject gas toward the central region (32). That is, the injection unit (4) can inject gas toward the outer region (33) excluding the central region (32). Accordingly, the substrate processing device (1) of one or more embodiments is implemented so as not to inject gas toward a portion of the support surface (31) where the substrate (10) is not present [i.e., the central region (32)], and to inject gas only toward a portion of the support surface (31) where the substrates (10) are present [i.e., the outer region (33)].

[0128] Accordingly, the substrate processing device (1) of one or more embodiments can reduce the flow rate of gas that is wasted and not involved in the process by flowing to the central region (32) where the substrate (10) is not present. Accordingly, the substrate processing device (1) of one or more embodiments can reduce operating costs by reducing the flow rate of wasted gas, thereby contributing to lowering the manufacturing cost of the substrate (10) on which the process is performed.

[0129] In addition, since the substrate processing device (1) of one or more embodiments is implemented to intensively inject gas toward the outer region (33) where the substrates (10) are, the flow rate of the gas involved in the process can be increased by flowing into the outer region (33) where the substrates (10) are. Accordingly, the substrate processing device (1) of one or more embodiments can improve the quality of the substrate (10) on which the process is performed.

[0130] The above-described injection unit (4) can inject the same gas to all of the outer regions (33). When performing the process using a plurality of gases, the injection unit (4) can sequentially repeat the process of injecting the same gas to all of the outer regions (33). In this case, the injection unit (4) can perform the process using a time-divided deposition (TSD) method in which the plurality of gases are injected by dividing time. For example, when performing the process using a silicon-containing gas, a carbon-containing gas, an argon gas, and a hydrogen-containing gas, the injection unit (4) can inject the carbon-containing gas and argon gas to all of the outer regions (33) after injecting the silicon-containing gas to all of the outer regions (33) and then stopping the injection of the silicon-containing gas. Thereafter, the injection unit (4) can inject the hydrogen-containing gas to all of the outer regions (33) while stopping the injection of the carbon-containing gas.

[0131] The above-described injection unit (4) can inject gas only toward the outer region (33) having a width (H, as shown in FIG. 7) greater than the diameter (D) of the substrate (10). In this case, the width (H) of the outer region (33) may be implemented to be equal to or longer than the diameter (D) of the substrate (10). Accordingly, the substrate processing device (1) of one or more embodiments is implemented to inject gas toward the entire surface of one side of the substrate (10) facing the injection unit (4), for all of the substrates (10) placed in the outer region (33). Therefore, the substrate processing device (1) of one or more embodiments can improve the uniformity of the process for each of the substrates (10). Meanwhile, the width (H) of the outer region (33) may mean the length of a portion belonging to the outer region (33) on an imaginary line passing through the central axis (30) of the substrate support member (3).

[0132] The above-described injection unit (4) may be connected to a power supply unit (40b). The power supply unit (40b) may apply plasma power to the injection unit (4). For example, the plasma power supply may be RF power. Using the plasma power supplied from the power supply unit (40b), the injection unit (4) may generate plasma and inject activated gas only toward the outer region (33). Accordingly, the substrate processing device (1) of one or more embodiments may further improve the quality of the substrate (10) on which the process has been performed by performing crystallization, film densification, impurity removal, etc. on the thin film formed on each of the substrates (10) using plasma. When plasma is generated in the processing space (SP), the plasma may be generated only in a portion of the processing space (SP) corresponding to the outer region (33). When plasma is generated inside the injection unit (4), plasma can be generated only in the part of the injection unit (4) corresponding to the outer region (33).

[0133] The above-mentioned injection unit (4) can inject a silicon-containing gas only toward the outer region (33), then inject a carbon-containing gas and an argon gas only toward the outer region (33), and then inject a hydrogen-containing gas only toward the outer region (33). In this case, the substrate processing device (1) of one or more embodiments can be implemented to form a thin film on the substrate (10) by an atomic layer deposition (ALD) method. The above-mentioned injection unit (4) can inject a gas toward the entire surface of the support surface (31) belonging to the outer region (33).

[0134] Accordingly, the substrate processing device (1) of one or more embodiments can be implemented so that a graphene film is formed on all of the substrates (10) disposed in the outer region (33) by a reaction using a carbon-containing gas and an argon gas after a source material having a silicon-containing gas is adsorbed onto all of the substrates (10) disposed in the outer region (33). In addition, by injecting a hydrogen-containing gas toward the substrates (10) disposed in the outer region (33) to form plasma, impurities can be removed from the graphene film. Therefore, the substrate processing device (1) of one or more embodiments can reduce the processing time required until the process is performed on all of the substrates (10) disposed in the outer region (33), and thus increase the productivity of the substrates (10) on which the process is completed. In addition, the substrate processing device (1) of one or more embodiments can reduce the deviation of process conditions between the substrates (10) placed in the outer region (33), thereby improving the uniformity of quality between the substrates (10) on which the process is performed.

[0135] The above-described injection unit (4) may further inject purge gas. For this purpose, the gas storage unit (40a) may further include a gas storage unit in which purge gas is stored. In addition, the injection unit (4) may inject silicon-containing gas, carbon-containing gas, argon gas, hydrogen-containing gas, and purge gas only toward the outer region (33). The purge gas injected between the silicon-containing gas injection step and the carbon-containing gas injection step may purge the silicon-containing gas remaining in the processing space (SP) (first purge). In addition, the purge gas injected after the carbon-containing gas injection step may purge the carbon-containing gas and hydrogen-containing gas remaining in the processing space (SP) (second purge). The purge gas does not participate in the process, and an inert gas such as argon (Ar) may be used, for example. By using the first purge gas and the second purge gas, the substrate processing device (1) of one or more embodiments may further improve the quality of a thin film formed on the substrate (10) by an atomic layer deposition (ALD) method.

[0136] The above injection unit (4) may include a first gas path (41) and a second gas path (42).

[0137] The first gas path (41) above is for injecting the first gas. One side of the first gas path (41) may be connected to the gas storage unit (40a) via a pipe, hose, gas block, or the like. The other side of the first gas path (41) may be connected to the processing space (SP). Accordingly, the first gas supplied from the gas storage unit (40a) may flow along the first gas path (41) and then be injected into the processing space (SP) through the first gas path (41). The first gas path (41) may function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (SP).

[0138] The second gas path (42) is for injecting the second gas. The second gas and the first gas may be different gases. For example, the first gas passing through the first gas path (41) may be a silicon-containing gas (source gas) or a carbon-containing gas, and the second gas passing through the second gas path (42) may be an argon gas or a hydrogen-containing gas. Of course, the opposite case is also possible, and the types of gases passing through the first gas path (41) and the second gas path (42) may be variously changed. The second gas path (42) may be connected to the gas storage unit (40a) at one end via a pipe, hose, gas block, or the like. The second gas path (42) may be connected to the processing space (SP) at the other end. Accordingly, the second gas supplied from the gas storage unit (40a) can flow along the second gas path (42) and then be injected into the processing space (SP) through the second gas path (42). The second gas path (42) can function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (SP).

[0139] The second gas path (42) and the first gas path (41) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit (40a) to the second gas path (42) can be injected into the processing space (SP) without passing through the first gas path (41). The first gas supplied from the gas storage unit (40a) to the first gas path (41) can be injected into the processing space (SP) without passing through the second gas path (42). In this case, the second gas path (42) can inject the second gas only toward the outer region (33). The first gas path (41) can inject the first gas only toward the outer region (33).

[0140] Referring to Fig. 8, the injection unit (4) may include a first electrode (43) and a second electrode (44). The first electrode (43) may be disposed on the upper side of the substrate support unit (3) so as to face the substrate support unit (3). The first electrode (43) may be grounded, thereby functioning as a ground electrode. The first electrode (43) may include the first gas passage (41) and the second gas passage (42). Accordingly, the first electrode (43) may inject the first gas through the first gas passage (41) and the second gas through the second gas passage (42). The first gas path (41) and the second gas path (42) can be arranged to be spatially separated from each other inside the first electrode (43).

[0141] The first gas path (41) may include a first connection hole (411) connected to the gas storage unit (40a) and a plurality of first injection holes (412) connected to the first connection hole (411). The first connection hole (411) and the first injection holes (412) may be formed inside the first electrode (43). One side of the first injection holes (412) may be connected to the first connection hole (411), and the other side may be connected to the processing space (SP). Accordingly, the first gas discharged from the gas storage unit (40a) may flow along the first connection hole (411) and then be injected into the processing space (SP) through the first injection holes (412).

[0142] The second gas path (42) may include a second connection hole (421) connected to the gas storage unit (40a) and a plurality of second injection holes (422) connected to the second connection hole (421). The second connection hole (421) and the second injection holes (422) may be formed inside the first electrode (43). One side of the second injection holes (422) may be connected to the second connection hole (421), and the other side may be connected to the processing space (SP). Accordingly, the second gas discharged from the gas storage unit (40a) may flow along the second connection hole (421) and then be injected into the processing space (SP) through the second injection holes (422). That is, the second injection hole (422) of the second gas path (42) formed in the first electrode (43) injects gas toward the upper portion of the second electrode (44).

[0143] The first electrode (43) may include a base electrode (43a) extending in the direction in which the substrate support portion (3) extends, and a protruding electrode (43b) extending downwardly from the lower surface of the base electrode (43a). The protruding electrode (43b) may have a shape extending from the lower surface of the base electrode (43a) in the direction in which the substrate support portion (3) is positioned. A plurality of such protruding electrodes (43b) may be provided, and the plurality of protruding electrodes (43b) may be arranged to be spaced apart from each other.

[0144] When the first electrode (43) includes a base electrode (43a) and a protruding electrode (43b), each of the first connecting hole (411), the second connecting hole (421), and the second injection hole (422) may be provided in the base electrode (43a). At this time, the first and second connecting holes (411, 421) may have a shape extending in the direction in which the base electrode (43a) extends, for example. In addition, the second injection hole (422) may extend in the vertical direction, one end may be connected to the second connecting hole (421), and the other end may be connected to the processing space (SP). In addition, the first injection hole (412) of the first gas path (41) may be provided to extend from the base electrode (43a) to the protruding electrode (43b). That is, the first injection hole (412) can be formed by vertically penetrating the protruding electrode (43b), and one end in the extension direction can be connected to the first connection hole (411) and the other end can be connected to the processing space (SP). In other words, the first injection hole (412) of the first gas path (41) is formed inside the protruding electrode (43b). Since the first connection hole (411) is formed in the base electrode (43a), the first injection hole (412) can be vertically penetrating a part of the base electrode (43a) and connected to the first connection hole (411).

[0145] The second electrode (44) may include a hole (44a) into which a protruding electrode (43b) may be inserted. The hole (44a) may be formed by penetrating the second electrode (44). This hole (44a) may function as a passage for passing gas discharged from the first electrode (43). The number of holes (44a) may be the same as that of the protruding electrodes (43b), and the holes (44a) may be formed at positions facing the protruding electrodes (43b). In addition, a protruding electrode (43b) may be inserted into each of a plurality of holes (44a). That is, the protruding electrode (43b) penetrates the hole (44a) formed in the second electrode (44). The inner diameter (or width) of the hole (44a) may be larger than the diameter (or width) of the protruding electrode (43b), and the vertical length of the hole (44a) may be smaller than the vertical length of the protruding electrode (43b).

[0146] When the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) formed in the second electrode (44), the height of the lower surface of the protruding electrode (43b) is the same as the height of the lower surface of the second electrode (44). Accordingly, the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) are spaced apart from each other, and the spaced space is communicated with the second injection hole (422). That is, the second electrode (44) is separately disposed below the first electrode (43).

[0147] In addition, when the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) of the second electrode (44), the outer surface of the protruding electrode (43b) is inserted so as to be spaced apart from the inner surface of the second electrode (44) surrounding the hole (44a). Accordingly, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the space between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44). In addition, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the processing space (SP). Therefore, the gas discharged from the second injection hole (422) can pass through the hole (44a) provided in the second electrode (44) and be injected toward the substrate support member (3). That is, the second gas discharged from the second injection hole (422) can pass through the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44), and then pass through the hole (44a) provided in the second electrode (44) and be injected to the lower side of the hole (44a). At this time, when the second gas passes through the hole (44a), it passes along the outer space of the protruding electrode (43b).

[0148] An insulating member (not shown) for partial insulation may be disposed between the second electrode (44) and the first electrode (43). RF power may be applied to the second electrode (44). When the first electrode (43) is grounded and the RF power is applied to the second electrode (44), plasma may be generated. That is, plasma may be generated in the space between the first electrode (43) and the second electrode (44). More specifically, plasma may be generated in the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and in the hole (44a). In addition, the plasma thus formed may be used to activate gas, and the activated gas may be injected into the processing space (SP).

[0149] In the above, it was described that plasma is formed by grounding the first electrode (43) and applying RF power to the second electrode (44). However, this is not limited to this, and plasma may be formed by applying RF power to the first electrode (43) and grounding the second electrode (44). In addition, plasma may be formed by applying a positive (+) voltage to one of the first electrode (43) and the second electrode (44) and connecting a negative (-) electrode to the other electrode.

[0150] The injection unit (4) injects gas toward the substrate support unit (3). At this time, the injection unit (4) may be provided so as to inject gas only toward the outer region (33) of the support surface (31) of the substrate support unit (3). In this case, the injection unit (4) is provided so as not to inject gas toward the central region (32) of the substrate support unit (3). The injection unit (4) may be provided so as not to inject gas toward the central region (32) of the support surface (31) where the substrate (10) is not supported, but only toward the outer region (33) of the support surface (31) where the substrate (10) is supported.

[0151] To this end, as illustrated in FIG. 9, the first injection hole (412) and the hole (44a) can be provided only in the area facing the outer region (33) of the substrate support portion (3). That is, when the protruding electrode (43b) is connected to the lower surface of the base electrode (43a), the protruding electrode (43b) can be connected only in the area facing the outer region (33) of the substrate support portion (3) among the lower surfaces of the base electrode (43a). In addition, since the first injection hole (412) is provided by vertically penetrating the protruding electrode (43b), the first injection hole (412) is formed only in the area facing the outer region of the substrate support portion (3). In addition, when forming a plurality of holes (44a) in the second electrode (44), they are formed only in the area facing the outer region (33) of the substrate support portion (3), and are formed at positions into which the protruding electrode (43b) can be inserted. Accordingly, a plurality of holes (44a) are formed only in the outer region (33) of the substrate support member (3). Accordingly, the first gas passing through the first injection hole (412) and the second gas or plasma passing through the hole (44a) can be injected only into the outer region of the substrate support member (3).

[0152] Accordingly, the substrate processing device (1) of one or more embodiments can reduce the flow rate of gas that is wasted by flowing to the central region (32) where the substrate (10) is not supported and thus does not participate in the process. Accordingly, the substrate processing device (1) of one or more embodiments can reduce operating costs by reducing the flow rate of wasted gas. In addition, the manufacturing cost required to manufacture the graphene film (20) can be reduced.

[0153] In addition, the substrate processing device (1) of one or more embodiments can intensively inject gas toward the outer region (33) where the substrate (10) is supported, thereby increasing the flow rate of gas involved in the process by flowing toward the outer region (33) where the substrate (10) is supported. Therefore, the substrate processing device (1) of one or more embodiments can improve yield.

[0154]

[0155] FIG. 10 is a schematic plan view of one or more embodiments of a spray unit in a substrate processing device of one or more embodiments.

[0156] In the above, it has been described that the injection unit (4) is provided so as to be able to inject gas only to the outer region of the substrate support unit (3). However, the present invention is not limited thereto, and the injection unit (4) may be provided so as to be able to inject gas to both the central region (32) and the outer region (33) of the substrate support unit (3). That is, the injection unit (4) may be provided so as to be able to inject gas to the entire support surface (31) of the substrate support unit (3). To this end, as illustrated in FIG. 10, the first injection hole (412) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3), and the hole (44a) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3).

[0157]

[0158] In addition, the above described case in which the substrate (10) is mounted on the outer region (33) of the substrate support part (3) as shown in FIGS. 6 and 7, and the substrate (10) is not mounted on the central region (32) is described. However, the present invention is not limited thereto, and the substrate support part (3) may be provided so that the substrate (10) can be mounted on both the outer region (33) and the central region (32). In addition, the above described case in which a plurality of substrates (10) are supported by the substrate support part (3) is not limited thereto, and a single substrate (10) may be supported.

[0159]

[0160]

[0161] FIG. 11 is a flowchart schematically illustrating a method of forming a graphene film according to an embodiment of the present invention using a substrate processing device of one or more embodiments.

[0162] Hereinafter, referring to FIGS. 2, 5 to 9, and 11, a method for forming a graphene film (20) using a substrate processing device (1) of one or more embodiments according to the first embodiment will be described. At this time, a plurality of substrates (10) are supported on an outer region (33) of a support surface (31) of a substrate support member (3), and an injection member (4) injects gas only to the outer region (33) of the support surface (31) of the substrate support member (3).

[0163] First, the substrate (10) is introduced into the chamber (2) and then the substrate (10) is seated (S10). This step (S10) can be performed by seated a plurality of substrates (10) on the substrate support member (3). The substrates (10) can be seated on the outer region (33) of the support surface (31) of the substrate support member (3). In this case, the substrate (10) is not seated on the central region (32) of the support surface (31) of the substrate support member (3). The step (S10) of seated the substrate can be performed by seated the substrate (10) on the substrate support member (3) by a transport robot (not shown) for transporting the substrate (10).

[0164] And the temperature of the substrate (10) is adjusted to 200°C to 500°C. At this time, the temperature of the substrate (10) can be adjusted using a heater connected to at least one of the substrate support member (3) and the chamber (2).

[0165] Next, a process is performed (S20). This step (S20) can be performed by injecting gas only toward the outer region (33) and performing the process on the substrates (10) placed in the outer region (33). In this case, the process can be performed on the substrates (10) by having the injection unit (4) inject gas only toward the outer region (33) and not injecting gas toward the central region (32).

[0166] Accordingly, the flow rate of gas that flows to the central region (32) where there is no substrate (10) and is wasted without participating in the process can be reduced. Accordingly, by reducing the flow rate of wasted gas, the operating cost can be reduced, thereby contributing to lowering the manufacturing cost of the substrate (10) on which the process is performed. In addition, since the gas is implemented to be intensively injected toward the outer region (33) where the substrates (10) are located, the flow rate of gas that flows to the outer region (33) where the substrates (10) are located and participates in the process can be increased. Therefore, the quality of the substrate (10) on which the process is performed can be improved.

[0167] Here, the width (H) of the outer region (33) may be implemented to be equal to or longer than the diameter of the substrate (10). Accordingly, the step (S20) of performing the process may inject gas only toward the outer region (33) having a width (H) greater than or equal to the diameter (D) of the substrate (10). Accordingly, for all of the substrates (10) arranged in the outer region (33), the gas is implemented to be injected toward the entire surface of one side of the substrate (10) facing the injection unit (4). Therefore, the uniformity of the process for each of the substrates (10) may be improved.

[0168] The step (S20) of performing the process may include a step (S21) of injecting a silicon-containing gas (hereinafter, source gas), a step (S22) of forming a first plasma (argon plasma) by injecting a carbon-containing gas and an argon gas, and a step (S23) of forming a second plasma (hydrogen plasma) by injecting a hydrogen-containing gas.

[0169] The step (S21) of injecting the source gas may be performed by injecting a source gas containing silicon onto the substrates (10) disposed in the outer region (33). This step (S21) may be performed by injecting the source gas only toward the outer region (33) to adsorb the source material onto the substrates (10). The step (S21) of injecting the source gas may be performed by the injection unit (4) injecting the source gas only toward the outer region (33). For the source gas injection, the source gas is supplied to the first connection hole (411) of the injection unit (4) using the gas storage unit (40a). Accordingly, the source gas supplied to the first connection hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support unit (3). At this time, the source gas may be injected only toward the outer region (33). The step (S21) of injecting the source gas may be performed by injecting not only through the first injection hole (412) but also through the hole (44a). In this case, the injection unit (4) may inject the source gas through both the first gas path (41) and the second gas path (42). When the source gas is injected to the substrate support unit (3) through the injection unit (4), the source gas is adsorbed or deposited on the substrate (10), and a silicon-containing layer (21) is formed on the substrate (10) as shown in (a) of FIG. 2. That is, an atomic layer or single-layer thin film containing silicon is formed.

[0170] The step (S22) of injecting carbon-containing gas can be performed by injecting carbon-containing gas onto substrates (10) disposed in the outer region (33). To inject carbon-containing gas, carbon-containing gas is supplied to the first connecting hole (411) of the injection unit (4) using the gas storage unit (40a). Accordingly, the carbon-containing gas supplied to the first connecting hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support unit (3). At this time, the carbon-containing gas can be injected only toward the outer region (33).

[0171] As described above, while injecting a carbon-containing gas through the injection unit (4), argon gas is injected to form a first plasma (argon plasma). To this end, argon gas is supplied to the second connection hole (421) of the injection unit (4) using the gas storage unit (40a). Accordingly, the argon gas supplied to the second connection hole (421) passes through the second injection hole (422) and then flows into the gap between the base electrode (43a) and the second electrode (44). That is, the argon gas flows into the gap between the upper surface of the base electrode (43a) and the second electrode (44) and into the hole (44a). In other words, the argon gas flows into and passes through the space between the first electrode (43) and the second electrode (44). Then, RF power is applied to the second electrode (44). At this time, it is preferable to apply power of 4.2 mW to 7.1 mW per unit area of ​​the substrate (10). When power is applied to the second electrode (44), the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged to form plasma. That is, the argon gas passing through the gap between the upper surface of the base electrode (43a) and the second electrode (44) and the hole (44a) can be discharged to form argon plasma (first plasma).

[0172] Argon plasma (first plasma) can be injected toward the substrate support (3) through the hole (44a). And, the carbon-containing gas injected toward the substrate support (3) through the first injection hole (412) can be activated by the argon plasma (first plasma). When the carbon-containing gas is injected toward the substrate support (3), carbon (C) can be deposited on the silicon-containing film (21). And, since the first plasma is formed while injecting the carbon-containing gas, the amount of carbon (C) deposited or bonded on the silicon-containing film (21) can be increased. That is, as the carbon (C)-containing gas is activated by the first plasma formed using argon (Ar) gas, the deposition or bonding of carbon (C) on the silicon-containing film (10) can be promoted. Therefore, a graphene film (20) having a large amount of carbon (C) can be formed. That is, a crystalline carbon-containing film with a large amount of carbon (C) can be formed. In addition, by controlling the temperature of the substrate to 200°C to 500°C and forming argon plasma (first plasma), silicon (Si) contained in the graphene film (20) can be sublimated and removed.

[0173] Next, a second plasma is formed by injecting a hydrogen-containing gas into the chamber (2) using the injection unit (4) (S23). To this end, the hydrogen-containing gas is supplied to the second connection hole (421) of the injection unit (4) using the gas storage unit (40a). Accordingly, the hydrogen-containing gas supplied to the second connection hole (421) passes through the second injection hole (422) and then flows into the gap between the base electrode (43a) and the second electrode (44). That is, the hydrogen-containing gas flows into the gap between the upper surface of the base electrode (43a) and the second electrode (44) and into the hole (44a). While the hydrogen-containing gas passes through the space between the first electrode (43) and the second electrode (44), RF power is applied to the second electrode (44). At this time, it is preferable to apply power of 4.2 mW to 7.1 mW per unit area of ​​the substrate (10). When power is applied to the second electrode (44), the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged, thereby forming a second plasma (hydrogen plasma).

[0174] The above description describes the injection of a hydrogen-containing gas when forming a second plasma. However, this is not limited to this, and the second plasma can be formed by injecting a hydrogen-containing gas and argon gas. In other words, the second plasma can be formed by discharging a hydrogen-containing gas and argon gas.

[0175] When the second plasma is formed, impurities contained in the graphene film (20) can be removed, and the graphene film (20) can be densified. That is, by forming the second plasma by adjusting the second RF power to 4.2 mW to 7.1 mW per unit area, impurities contained in the graphene film (20) can be removed, and the graphene film can be densified. Accordingly, a densified graphene film (20) with little or no impurity content is formed.

[0176]

[0177] In the above, when forming the first plasma by injecting the carbon-containing gas, it was described that the carbon-containing gas and argon gas are passed through different gas paths. However, this is not limited to this, and the carbon-containing gas and argon gas may be passed through the same path. For example, the carbon-containing gas and argon gas may be passed through the second gas path (42) and injected toward the substrate support member (3). That is, the carbon-containing gas and argon gas may be introduced into the second connection hole (421), passed through the second injection hole (422) and the hole (44a), and injected toward the substrate support member (3).

[0178]

[0179] In the above, the formation of a graphene film by the method according to the first embodiment using one or more substrate processing devices (1) of the embodiments has been described. However, the invention is not limited thereto, and a graphene film may be formed by the method according to the second embodiment using one or more substrate processing devices of the embodiments.

[0180] In order to form a graphene film (20) by the method according to the second embodiment, the temperature of the substrate (10) is adjusted to more than 500°C and less than 1200°C. Then, in the step of injecting a carbon-containing gas (S22), a hydrogen-containing gas may be injected together with the carbon-containing gas to form a first plasma. To inject the hydrogen-containing gas, the hydrogen-containing gas is supplied to the second connecting hole (421) of the injection unit (4) using the gas storage unit (40a). Accordingly, the hydrogen-containing gas supplied to the second connecting hole (421) passes through the second injection hole (422) and then flows into the gap between the base electrode (43a) and the second electrode (44). That is, the hydrogen-containing gas flows into the gap between the base electrode (43a) and the upper surface of the second electrode (44) and the hole (44a). In other words, hydrogen-containing gas flows into and passes through the space between the first electrode (43) and the second electrode (44). Then, RF power is applied to the second electrode (44). At this time, it is preferable to apply power of 4.2 mW to 7.1 mW per unit area of ​​the substrate (10). When power is applied to the second electrode (44), the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged to form plasma. That is, the hydrogen-containing gas passing through the gap between the upper surface of the base electrode (43a) and the second electrode (44) and the hole (44a) can be discharged to form hydrogen plasma (first plasma). At this time, the carbon-containing gas injected toward the substrate support (3) through the first injection hole (412) can be activated by the hydrogen plasma (first plasma).

[0181] In addition, in the step of forming the second plasma (S22), the plasma can be formed using a hydrogen-containing gas. That is, in the same way as when forming the first plasma, the second plasma can be formed by introducing the hydrogen-containing gas into the gap between the upper surface of the base electrode (43a) and the second electrode (44) and the hole (44a).

[0182] In addition, when forming the first and second plasmas in the second embodiment, argon gas may be additionally used. That is, argon gas may be supplied through the second connection hole (421) so that the argon gas flows into the space between the first electrode (43) and the second electrode (44). In this case, plasma can be formed more effectively than when only hydrogen-containing gas is introduced.

[0183] In addition, when forming a graphene film using the method according to the second embodiment, when forming the first plasma by injecting a carbon-containing gas and a hydrogen-containing gas, a gas containing both carbon and hydrogen may be injected. At this time, the gas containing both carbon and hydrogen may be, for example, methane (CH4) gas. Of course, the gas containing both carbon and hydrogen is not limited to methane (CH4) gas, and various gases containing both carbon and hydrogen may be used. In the above, forming a graphene film (20) using the substrate processing device (1) of one or more embodiments using the method according to the first and second embodiments has been described. However, the present invention is not limited thereto, and a graphene film may be formed using the substrate processing device (1) of one or more embodiments using the method according to one or more embodiments described in FIG. 4.

[0184] According to embodiments of the present invention, a graphene film can be easily formed using a deposition method. That is, a crystalline carbon-containing film can be easily formed.

[0185] In addition, a graphene film with increased carbon content can be formed, a graphene film with a low impurity content can be formed, and a graphene film with a dense film quality can be formed.

[0186]

[0187] The second plate (41) may be arranged on the upper side of the substrate support member (3), and the first plate (42) may be arranged on the second plate (41). The second plate (41) may be arranged spaced apart from the substrate support member (3) upward. The bottom surface of the second plate (41) facing the substrate support member (3) may be formed to have the same area as the support surface (31). The bottom surface of the second plate (41) may also be formed to have a larger area than the support surface (31).

[0188] The third openings (411) may be formed in the second plate (41). The third openings (411) may allow gas to pass through. The third openings (411) face the substrate (10), and may be one substrate (10) or a plurality of substrates (10). When the plurality of substrates (10) are formed, they may be formed only in the outer region (33). Alternatively, gas may be injected into both the outer region (33) and the central region (32). Accordingly, the injection unit (4) may be implemented to inject gas only toward the outer region (33) by using the third openings (411). The third openings (411) may be spaced apart from each other within the first passage region (41a), and the third openings (411) may be arranged in a zigzag pattern with the gas injection holes of the first plate (42). The above zigzag arrangement may mean that the gas holes are not facing each other and are arranged in different locations.

[0189] The first plate (42) may be formed with a plurality of first openings (421a) through which a source gas containing silicon is injected and a plurality of second openings (421b) through which a reactant gas containing carbon is injected.

[0190] The first openings (421a) may be formed by vertically penetrating the first plate (42). The first openings (421a) may belong to the first gas passage (4a). Accordingly, the first openings (421a) may allow the first gas to pass through. The first openings (421a) may be formed only in the first passage area (41a). The first gas may be a source gas.

[0191] The third opening (411) of the second plate (41) may be arranged in a zigzag manner so as not to face the first openings (421a) and the second openings (421b) of the first plate (42). The zigzag arrangement may mean that the gas holes do not face each other and are arranged in different positions. The source gas or reactant gas injected from the first openings (421a) and the second openings (421b) of the first plate (42) may not pass directly to the third opening (411) of the second plate (41), but may pass through the upper surface of the second plate (41) and then the third opening (411). Plasma may be formed by utilizing the potential difference between the second plate (41) and the first plate (42). The RF power source (40b) can be connected to either the second plate (41) or the first plate (42).

[0192] One side of each of the second openings (421b) may be formed by penetrating the interior of the first plate (42). The other side of each of the second openings (421b) may be formed by penetrating the side surface of the first plate (42) without penetrating the upper surface of the first plate (42). The second openings (421b) may be formed by a gundrill method. The second openings (421b) may belong to the second gas passage (4b) that injects a reactant gas containing carbon. Accordingly, the second openings (421b) may allow the second gas to pass. The first openings (431a) and the second openings (421b) may be formed only in the first passage area (41a). In the first pass-through region (41a), the second openings (411b) and the first openings (411a) may be spaced apart from each other. The first openings (431a) and the second openings (411b) may be arranged entirely in the first pass-through region (41a) so as to inject gas toward all of the substrates (10) arranged in the outer region (33), thereby injecting gas to the entire surface. The first openings (411a) may be arranged entirely in the first pass-through region (41a) so as to inject gas toward all of the substrates (10) arranged in the outer region (33).

[0193] It may include the second plate (41) and the first blocking member (412).

[0194] The second plate (41) can block the passage of gas. The first blocking member (412) can be arranged in the first blocking region (41b, illustrated in FIG. 9) corresponding to the central region (32). Accordingly, the injection unit (4) can be implemented to block the injection of gas toward the central region (32) using the first blocking member (412) and to inject gas only toward the outer region (33) using the third openings (411). The third openings (411), the first opening (431a), and the second openings (411b) may not be formed in the first blocking member (412). The first blocking region (41b) and the central region (32) can be formed to have the same shape and size. The outer region can be formed in the shape of a circular ring, a donut, or a tube.

[0195] Referring to Fig. 12, the injection unit (4) may include a first plate (42) and a plurality of gas holes (421).

[0196] The first plate (42) may be positioned spaced apart from the second plate (41) upwardly. The bottom surface of the first plate (42) facing the second plate (41) may be formed flat. The bottom surface of the first plate (42) may be formed to have the same area as the support surface (31). The bottom surface of the first plate (42) may also be formed to have a larger area than the support surface (31).

[0197] The above gas holes (421) may be formed in the first plate (42). The gas holes (421) may allow gas to pass through. The gas may pass through the first plate (42) through the gas holes (421) and be sprayed toward the upper surface of the second plate (41). When viewed from above or below, the gas holes (421) of the first plate (42) and the third opening (411) of the second plate (41) do not have positions that match.

[0198] The gas can be injected toward the substrate (10) through the gas holes (421) and the third openings (411). Plasma can be formed between the second plate (41) and the first plate (42). The second plate (41) can be used as a first electrode, and the first plate (42) can be used as a second electrode, and an RF power source can be connected to the first electrode or the second electrode. That is, plasma can be formed in the space between the second plate (41) and the first plate (42) by utilizing the potential difference between them.

[0199] When the first gas and the second gas are injected into the first plate (42), the first gas and the second gas can be injected toward the lower substrate through the third opening (411) of the second plate (41).

[0200] The second plate (41) and the first plate (42) have a third opening (411) or a gas hole (421) formed without a blocking area in the center so that gas can be sprayed to both the front surfaces of the second plate (41) and the first plate (42). In addition, the second plate (41) having a plurality of third openings (411) formed in the first plate (42) including the first opening (421a) and the second opening (421b), electrically insulated from the first plate (42), spaced apart from the first plate (42), and arranged in an alternating manner with the first openings (421a) and the second openings (421b) may be accommodated in a chamber (2) including a turbomolecular pump (TMP, 100-1). In addition, the chamber (2) including the turbo molecular pump (TMP, 100-1) can be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0201] The first opening (421a) is connected from a gas storage unit (40a), and can temporarily inject one or more gases by being connected from the gas storage unit to the first opening (421a). The gas storage unit (40a) may include a pile-up tank, and the gas storage unit (40a) may function as a pile-up tank. The pile-up tank is connected to the first gas passage (4a) to be filled with one or more gases, and the filled gases can be temporarily injected.

[0202] The above first plate (42) can include a second blocking member (not shown) on the upper surface of the first blocking member (412) of the second plate (41).

[0203]

[0204] The second blocking member (not shown) can block the passage of gas. The second blocking member (not shown) can be arranged in a second blocking area (not shown) corresponding to the central area (32). In addition, the first blocking member (412) and the second blocking member (not shown) can be connected as one, thereby blocking the space between the second plate (41) and the first plate (42), thereby reducing waste of space. The material that blocks the space between the first blocking member (412) and the second blocking member (not shown) located above the first blocking member (412) can be a different material from the second plate (41) and the first plate (42), and can be, for example, a material such as Teflon or quartz. According to the first blocking member (412), the injection unit (4) can be implemented to block the injection of gas toward the central region (32) using the second blocking member (not shown) and the first blocking member (412), and to inject gas only toward the outer region (33) using the gas holes (421) and the third openings (411). The gas holes (421) are not formed in the second blocking member (not shown). The second blocking region (not shown), the first blocking region (41b), and the central region (32) can be formed to have the same shape and size. The second blocking region (not shown) can be arranged inside the second passage region (42a). The second pass area (42a) may be arranged on the outside of the second blocking area (not shown) so as to surround the second blocking area (not shown). When the second blocking area (not shown) is formed in a circular shape, the second pass area (42a) may be formed in a circular ring shape or a donut shape surrounding the second blocking area (not shown).

[0205] FIG. 12 is a flowchart schematically illustrating a method of forming a graphene film according to an embodiment of the present invention using a substrate processing device of one or more embodiments.

[0206] Hereinafter, a method for forming a graphene film according to an embodiment of the present invention using a substrate processing device of one or more embodiments will be described with reference to (a) to (d) of FIGS. 3 and 12. At this time, a description of the purge step is omitted.

[0207] First, the temperature inside the chamber (2) is adjusted to 200°C to 500°C using a heater (not shown). Then, the substrate (10) is brought into the chamber (2) and then the substrate (10) is seated (S10). This step (S10) can be performed by seating a plurality of substrates (10) or one substrate (10) on the substrate support member (3). One of the plurality of substrates (10) or one substrate (10) can be seated on the support surface (31) of the substrate support member (3), or the plurality of substrates (10) can be seated on the outer region (33). The step (S10) of seating the substrates can be performed by seating the substrates (10) on the substrate support member (3) using a transport robot (not shown) for transporting the substrates (10).

[0208] In the above, it has been described that the substrate (10) is placed on the substrate support member (3) after controlling the temperature inside the chamber (2). However, this is not limited to this, and the temperature inside the chamber (2) may be controlled after the substrate (10) is placed on the substrate support member (3).

[0209] Next, a processing process is performed (S20). This step (S20) can be performed by injecting a processing gas toward the substrate (10) and performing the processing process on the substrates (10). When one substrate (10) is mounted, the injection unit (4) can inject gas onto the entire surface of the substrate (10).

[0210] In addition, in one or more embodiments, the treatment process can be performed on the substrates (10) by having the injection unit (4) inject gas only toward the outer region (33) and not inject gas toward the central region (32).

[0211] Accordingly, the flow rate of gas that flows to the central region (32) where there is no substrate (10) and is wasted without participating in the processing process can be reduced. Accordingly, by reducing the flow rate of wasted gas, operating costs can be reduced, thereby contributing to lowering the manufacturing cost of forming a graphene film (20).

[0212] In addition, when gas is sprayed toward the front surface of the substrate (10) having the substrate, the substrate (10) flows toward the front surface, thereby increasing the flow rate of the gas involved in the processing process, thereby improving the uniformity of the graphene film (20) formed by performing the processing process.

[0213] Here, the width (H) of the outer region (33) may be implemented to be the same as the diameter of the substrate (10) or longer than the diameter of the substrate (10). Accordingly, the step (S20) of performing the processing process may inject gas only toward the outer region (33) having a width (H) greater than the diameter (D) of the substrate (10). Accordingly, the gas is implemented to be injected toward the entire surface of one side of the substrate (10) facing the injection unit (4) for all of the substrates (10) arranged in the outer region (33). Therefore, the uniformity of the processing process for each of the substrates (10) may be improved.

[0214] Here, the step (S20) of performing the above processing process can be performed by injecting an activated gas using plasma. In this case, by using the plasma power supplied from the power supply unit (40b), the injection unit (4) can generate plasma and inject the activated gas only toward the plurality of substrates or one substrate (10). Accordingly, by performing crystallization, film densification, impurity removal, etc. on the thin film formed on each of the substrates (10) using plasma, the quality of the substrate (10) on which the processing process has been performed can be further improved.

[0215] A source gas containing silicon (Si) can be injected from a plurality of first openings (421a) of the first plate (42). Thereafter, a carbon (C)-containing gas can be injected from a plurality of second openings (421b) of the first plate (42). While injecting the carbon (C)-containing gas, argon gas can be injected to form a first plasma. Thereafter, argon gas can be injected to form a second plasma to crystallize the film, thereby forming a graphene film (20). When forming the second plasma, hydrogen gas can be included to form hydrogen and argon plasma. In addition, the second plasma can be formed as hydrogen plasma by including hydrogen gas.

[0216] According to embodiments of the present invention, a graphene film can be easily formed using a deposition method. That is, a crystalline carbon-containing film can be easily formed.

[0217] In addition, a graphene film with increased carbon content can be formed, a graphene film with a low impurity content can be formed, and a graphene film with a dense film quality can be formed.

Claims

1. A method for forming a graphene film on a substrate within a chamber, A step of spraying a gas containing silicon onto the substrate; A step of forming a carbon-containing gas injection and argon plasma on the substrate; and A method for forming a graphene film, comprising: forming argon plasma on the substrate.

2. In claim 1, A method for forming a graphene film, comprising a step of controlling the temperature of a substrate to 200°C or higher and 500°C or lower.

3. In claim 1, A method for forming a graphene film by forming plasma by additionally including hydrogen gas in the step of forming argon plasma on the above substrate.

4. In claim 1, Between the step of injecting the silicon-containing gas and the step of injecting the carbon-containing gas and forming the argon plasma on the substrate, A method for forming a graphene film, comprising: a step of forming plasma by injecting a hydrogen-containing gas.

5. In claim 1, The step of forming a carbon-containing gas injection and argon plasma on the substrate includes the step of supplying a first RF power to the chamber, The step of forming argon plasma on the substrate includes the step of supplying a second RF power to the chamber, A method for forming a graphene film in which the first RF power is greater than the second RF power.

6. In claim 1, A method for forming a graphene film, comprising the steps of spraying a carbon-containing gas on the substrate and forming argon plasma, and the step of forming argon plasma on the substrate, wherein the argon plasma is a plasma formed inside the chamber.

7. In claim 1, A method for forming a graphene film, comprising: forming an argon plasma by injecting a carbon-containing gas onto the substrate; and forming an argon plasma onto the substrate, wherein the argon plasma is formed by utilizing a potential difference between a first electrode and a second electrode installed inside the chamber.

8. In claim 1, A method for forming a graphene film, wherein the time for the step of forming argon plasma and injecting carbon-containing gas on the substrate is shorter than the time for the step of forming argon plasma on the substrate.

9. In claim 8, The time for forming the carbon-containing gas injection and argon plasma on the above substrate is 2 seconds or more and 5 seconds or less, A method for forming a graphene film, wherein the time for forming argon plasma on the above substrate is more than 5 seconds and less than 7 seconds.

10. In claim 5, Between the step of injecting the gas containing the silicon and the step of supplying the first RF power to the chamber to form the first plasma, a step of exhausting the chamber; and A method for forming a graphene film, comprising: a step of exhausting the chamber while injecting purge gas into the interior of the chamber; 11. A method for forming a graphene film on a substrate accommodated in a chamber, A step of injecting a source gas containing silicon into the interior of the chamber; A step of forming a silicon carbide film on a substrate by injecting a carbon-containing gas into the interior of the chamber; A method for forming a graphene film, comprising: forming plasma inside the chamber to remove silicon (Si) from the silicon carbide film.

12. A first plate including a first opening and a second opening; A method for forming a graphene film on a substrate accommodated in a chamber including a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of third openings arranged in an alternating manner with the first and second openings, and a turbo molecular pump (TMP), A step of spraying a gas containing silicon onto the substrate; A step of forming a carbon-containing gas injection and argon plasma on the substrate; and A method for forming a graphene film, comprising: forming argon plasma on the substrate.

13. In claim 12, A method for forming a graphene film by forming plasma by additionally including hydrogen gas in the step of forming argon plasma on the above substrate.

14. In claim 13, The chamber including the above turbomolecular pump (TMP) A method for forming a graphene film by controlling the pressure of a high vacuum to 10 mTorr or more and 50 mTorr or less.

15. In claim 13, The above first opening is connected from the gas storage unit, A method for forming a graphene film by temporarily injecting one or more gases from the above gas storage unit and connecting to the first opening.

16. In claim 15, The above gas storage unit includes a pile-up tank, The above pile-up tank is a method for forming a graphene film by filling one or more gases and temporarily spraying the filled gases.

17. A method for forming a graphene film on a substrate within a chamber, A step of spraying a gas containing silicon onto the substrate; A step of forming a carbon-containing gas injection and argon plasma on the substrate; and A method for forming a graphene film, comprising: forming hydrogen plasma on the substrate.

18. In claim 17, A method for forming a graphene film by controlling the temperature of the above substrate to 200°C or more and 500°C or less.

19. A method for forming a graphene film on a substrate within a chamber, A step of spraying a gas containing silicon onto the substrate; A step of forming a first plasma by spraying a carbon-containing gas and a hydrogen-containing gas on the substrate; and A method for forming a graphene film, comprising: a step of forming a second plasma by spraying a hydrogen-containing gas on the substrate.

20. In claim 19, A method for forming a graphene film, comprising a step of controlling the temperature of the substrate to be greater than 500°C and less than 1200°C.

21. In claim 19, The step of forming the first plasma includes the step of supplying a first RF power to the chamber, The step of forming the second plasma includes the step of supplying a second RF power to the chamber, A method for forming a graphene film in which the first RF power is greater than the second RF power.

22. In claim 19, In spraying carbon-containing gas and hydrogen-containing gas on the above substrate, A method for forming a graphene film by spraying separately prepared carbon-containing gas and hydrogen-containing gas, or spraying a gas containing carbon and hydrogen together.

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