Method for forming carbon-containing film

Abstract

An embodiment of the present invention relates to a method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, the method comprising the steps of: injecting a silicon-containing source gas into the chamber; forming first plasma by supplying first RF power to the chamber while injecting carbon and a plasma-forming gas into the chamber; and forming second plasma by supplying second RF power to the chamber while injecting a plasma-forming gas into the chamber, wherein the first RF power may be greater than the second RF power. Therefore, according to embodiments of the present invention, the carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method. In addition, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. In addition, an amorphous carbon-containing film having dense film quality can be formed.

Description

Method for forming a carbon-containing film

[0001] The present invention relates to a method for forming a carbon-containing film, and more particularly, to a method for forming a carbon-containing film that can easily form a carbon-containing film.

[0002] There are various demands for carbon-containing films in the semiconductor, display, and solar cell fields, and plasma is used to form carbon-containing films, and a plasma treatment method and device using plasma to form the same are required.

[0003] (Prior art document) (Patent document 1) Korean registered patent 10-1984694

[0004] The present invention provides a method for forming a carbon-containing film, which can easily form a carbon-containing film.

[0005] The present invention provides a method for forming a carbon-containing film capable of easily forming an amorphous carbon-containing film.

[0006] An embodiment of the present invention provides a method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, comprising: a step of injecting a source gas containing silicon into the chamber; a step of supplying a first RF power to the chamber while injecting carbon and a plasma-forming gas into the chamber to form a first plasma; a step of supplying a second RF power to the chamber while injecting a plasma-forming gas into the chamber to form a second plasma; wherein the step of forming the first and second plasmas may include a step of adjusting the first RF power to be greater than the second RF power.

[0007] A method for forming a carbon-containing film according to an embodiment of the present invention may include a step of controlling the temperature of a substrate to 200°C to 1200°C.

[0008] The step of forming the first plasma may include a step of adjusting the first RF power to 800 Watts to 1000 Watts, and the step of forming the second plasma may include a step of adjusting the second RF power to 100 Watts to 300 Watts.

[0009] The plasma forming gas injected in the first and second plasma forming steps may include one or a combination of hydrogen-containing gas, argon gas, and helium gas.

[0010] The first and second plasmas may be plasmas formed inside the chamber.

[0011] In forming the first and second plasmas, the potential difference between the first electrode and the second electrode installed inside the chamber can be used.

[0012] The time for forming the first plasma may be shorter than the time for forming the second plasma.

[0013] The time for forming the first plasma may be 2 seconds or more and 5 seconds or less, and the time for forming the second plasma may be 5 seconds or more and 7 seconds or less.

[0014] Between the step of injecting the source gas and the step of forming the first plasma by supplying the first RF power to the chamber while injecting carbon and plasma forming gas into the interior of the chamber, one of the steps of evacuating the chamber; and the step of evacuating the chamber while injecting the purge gas into the interior of the chamber may be performed.

[0015] In injecting the above carbon and plasma forming gas, the plasma forming gas contains hydrogen, and a separately prepared carbon and hydrogen containing gas or a gas containing both carbon and hydrogen can be injected.

[0016] Between the step of injecting the source gas and the step of forming the first plasma by injecting the carbon and plasma forming gas, a step of forming a third plasma by injecting the plasma forming gas into the interior of the chamber may be included.

[0017] An embodiment of the present invention provides a method for forming an amorphous carbon-containing film on a substrate housed in a chamber comprising a first plate including a first gas supply port and a second gas supply port, a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of openings arranged in an alternating manner with the first gas supply port and the second gas supply port, and a turbo molecular pump (TMP), the method comprising the steps of: injecting a source gas containing silicon into the chamber; supplying a first RF power to the chamber while injecting carbon and a plasma forming gas into the chamber to form a first plasma; and supplying a second RF power to the chamber while injecting a plasma forming gas into the chamber to form a second plasma; wherein the step of forming the first and second plasmas may include the step of adjusting the first RF power to be greater than the second RF power.

[0018] A method for forming a carbon-containing film according to an embodiment of the present invention may include a step of controlling the temperature of a substrate to 200°C to 1200°C.

[0019] The step of forming the first plasma may include a step of adjusting the first RF power to 800 Watts to 1000 Watts, and the step of forming the second plasma may include a step of adjusting the second RF power to 100 Watts to 300 Watts.

[0020] The plasma forming gas injected in the first and second plasma forming steps may include one or a combination of hydrogen-containing gas, argon gas, and helium gas.

[0021] The step of controlling the pressure inside the chamber to a pressure of 10 mTorr or more and 50 mTorr or less using the turbo molecular pump (TMP) may be included.

[0022] According to embodiments of the present invention, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0023] In addition, an amorphous carbon-containing film with increased carbon content and reduced impurity content can be formed. In addition, an amorphous carbon-containing film with a dense film quality can be formed.

[0024] FIG. 1 is a drawing showing a state in which a carbon-containing film is formed on a substrate by a method according to a first embodiment of the present invention.

[0025] Figures 2 (a) to (c) are process diagrams conceptually illustrating a method for forming an amorphous carbon-containing film on a substrate using a method according to the first embodiment of the present invention.

[0026] FIG. 3 is a schematic diagram of a first substrate processing device for forming a carbon-containing film according to embodiments of the present invention.

[0027] Figures 4 (a) to (d) are process diagrams conceptually illustrating a method for forming a carbon-containing film on a substrate using a method according to a second embodiment of the present invention.

[0028] FIG. 5 is a schematic diagram of a second substrate processing device capable of forming a carbon-containing film according to embodiments of the present invention.

[0029] Figure 6 is a schematic perspective view of a substrate support unit in a second substrate processing device.

[0030] Figure 7 is a plan view of a substrate support unit in a second substrate processing device.

[0031] Figure 8 is a schematic cross-sectional view of the injection unit in the second substrate processing device.

[0032] Figure 9 is a schematic plan view of the injection unit in the second substrate processing device.

[0033] Figure 10 is a schematic plan view of a modified example of the injection unit in the second substrate processing device.

[0034] FIG. 11 is a flowchart schematically illustrating a method for forming a carbon-containing film according to an embodiment of the present invention using a second substrate processing device.

[0035] FIG. 12 is a schematic drawing of a third substrate processing device capable of forming a carbon-containing film according to embodiments of the present invention.

[0036] Fig. 13 is a drawing showing the arrangement structure of the opening in the second substrate processing device illustrated in Fig. 12.

[0037] Fig. 14 is a drawing showing how a supply port and an opening are formed in a gas injection device in the second substrate processing device illustrated in Fig. 12.

[0038] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure complete disclosure of the present invention and to fully inform those skilled in the art of the scope of the invention. For the purpose of illustrating embodiments of the present invention, the drawings may be exaggerated.

[0039]

[0040] FIG. 1 is a drawing showing a state in which a carbon-containing film is formed on a substrate by a method according to a first embodiment of the present invention.

[0041] A carbon-containing film (20) can be formed on a substrate (10). That is, an amorphous carbon-containing film (20) can be formed on a substrate (10) by a deposition method.

[0042] The substrate (10) may be either a wafer or glass. In the case where the substrate (10) is a wafer, the wafer may be, for example, a silicon (Si) wafer.

[0043] The carbon-containing film (20) can be formed through a deposition process. And the carbon-containing film (20) can be an amorphous carbon-containing film.

[0044]

[0045] Figures 2 (a) to (c) are process diagrams conceptually illustrating a method for forming an amorphous carbon-containing film on a substrate using a method according to the first embodiment of the present invention.

[0046] A method for forming a carbon-containing film (20) may include a step of forming a silicon-containing film (21) on a substrate (10) by injecting a source gas containing silicon (Si) toward the substrate (10), a step of forming a first plasma while injecting a carbon (C)-containing gas to form an amorphous carbon-containing film (20), and a step of forming a second plasma.

[0047] Hereinafter, for convenience of explanation, the step of forming a silicon-containing film (21) is referred to as the source gas injection step. In addition, the step of forming a first plasma while injecting a carbon-containing gas is referred to as the 'first plasma formation step', and the step of forming a second plasma is referred to as the 'second plasma formation step'.

[0048] The 'source gas injection step - first plasma formation step - second plasma formation step' can be considered as one carbon-containing film formation cycle (CY). That is, the method for forming a carbon-containing film includes a carbon-containing film formation cycle (CY), and the carbon-containing film formation cycle (CY) can include a source gas injection step, a first plasma formation step, and a second plasma formation step.

[0049] In addition, the method for forming a carbon-containing film may further include at least one of an exhaust step (first exhaust step) performed between the source gas injection step and the first plasma formation step and an exhaust step (second exhaust step) performed after the first plasma formation step. Here, exhaust may mean exhausting the interior of a substrate processing device into which a substrate (10) is loaded or the interior of a chamber that is a component of the substrate processing device.

[0050] When the method for forming a carbon-containing film includes an exhaust step, 'source gas injection step - first exhaust step - first plasma formation step - second plasma formation step - second exhaust step' can be considered as one carbon-containing film formation cycle (CY). That is, the method for forming a carbon-containing film includes a carbon-containing film formation cycle (CY), and the carbon-containing film formation cycle (CY) can include a source gas injection step, a first exhaust step, a first plasma formation step, a second plasma formation step, and a second exhaust step. At this time, at least one of the first exhaust step and the second exhaust step may be omitted in the carbon-containing film formation cycle (CY).

[0051] And, the carbon-containing film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3, …). That is, the step of forming a carbon-containing film can include one (n=1) or two or more (n ≥ 2) carbon-containing film formation cycles (CY). Here, two or more times can mean multiple times.

[0052]

[0053] FIG. 3 is a schematic diagram of a first substrate processing device for forming a carbon-containing film according to embodiments of the present invention.

[0054] Hereinafter, the first substrate processing device illustrated in Fig. 3 will be described.

[0055] Referring to FIG. 3, the substrate processing device may include a chamber (1000), a support (2000) installed within the chamber (1000) to support a substrate (10), first and second gas injection units (3000a, 3000b) installed within the chamber (1000) so as to face the support (2000), a gas supply unit (4000) for providing process gas to the first and second gas injection units (3000a, 3000b), an antenna (6100) having a coil for inducing an electric field within the chamber (1000) for plasma generation, and a power supply unit (6200) connected to the antenna (6100).

[0056] In addition, the substrate processing device may include a heating unit (5000) installed to face the support (2000), a driving unit (7000) that raises and lowers or rotates the support (2000), and an exhaust unit (8000) that exhausts gas and impurities inside the chamber (1000).

[0057] The chamber (1000) may be a cylinder shape having an internal space, and may be, for example, a dome shape as illustrated in FIG. 3. More specifically, the chamber (1000) may include a chamber body (1100), an upper body (1200) installed on the upper side of the chamber body (1100), and a lower body (1300) installed on the lower side of the chamber body (1100). The chamber body (1100) may be a cylinder shape with an open upper and lower side, and the upper body (1200) may be installed to cover the upper opening of the chamber body (1100), and the lower body (1300) may be installed to cover the lower opening of the chamber body (1100). In addition, the upper body (1200) may be a dome shape having a slope whose height increases toward the center in the width direction thereof. In addition, the lower body (1300) may have a dome shape with a slope whose height decreases toward the center in the width direction. Each of the chamber (1000), i.e., the chamber body (1100), the upper body (1200), and the lower body (1300) may be made of a transparent material that allows light to pass through, for example, quartz.

[0058] The gas supply unit (4000) may include a source gas supply unit (4100) that supplies a gas containing silicon (Si) (i.e., a source gas), and a carbon-containing gas supply unit (4200) that supplies a carbon-containing gas. In addition, the gas supply unit (4000) may include a gas supply unit for forming a plasma. That is, the gas supply unit (4000) may include at least one of a hydrogen-containing gas supply unit (4300) that supplies a hydrogen-containing gas, an argon gas supply unit (4400) that supplies argon (Ar) gas, and a helium gas supply unit (4700) that supplies helium (He) gas. In addition, the gas supply unit (4000) may further include a purge gas supply unit (not shown) that supplies a purge gas.

[0059] In addition, the gas supply unit (4000) may include a first transport pipe (4500a) connecting the source gas supply unit (4100), the carbon-containing gas supply unit (4200) and the first gas injection unit (3000a), and a second transport pipe (4500b) connecting at least one of the hydrogen-containing gas supply unit (4300), the argon gas supply unit (4400) and the helium gas supply unit (4700) and the second gas injection unit (3000b).

[0060] In addition, the gas supply unit (4000) may include a plurality of first connection pipes (4600a) connecting the source gas supply unit (4100), the carbon-containing gas supply unit (4200) and the first transport pipe (4500a), a valve installed in each of the plurality of first connection pipes (4600a), a plurality of second connection pipes (4600b) connecting at least one of the hydrogen-containing gas supply unit (4300), the argon gas supply unit (4400) and the helium gas supply unit (4700) and the second transport pipe (4500b), and a valve installed in each of the plurality of second connection pipes (4600b).

[0061] And, using the substrate processing device described above, a carbon-containing film (20) can be formed on a substrate. More specifically, an amorphous carbon-containing film (20) can be formed.

[0062] Hereinafter, the carbon-containing film formation cycle (CY) will be described in more detail with reference to (a) to (c) of FIG. 2 and FIG. 3. In addition, a method for forming an amorphous carbon-containing film on a substrate will be described.

[0063] First, a substrate (10) is loaded into the chamber (1000) and the substrate (10) is placed on a support (2000). Then, the chamber (1000) or the substrate (10) is heated using a heating unit (500). At this time, the substrate (10) is heated so that the temperature becomes 200°C to 1200°C (200°C or higher and 1200°C or lower). The temperature of the substrate (10) is maintained at 200°C to 1200°C during the process.

[0064] When the temperature of the substrate (10) is heated to 200°C to 1200°C, a gas (source gas) containing silicon (Si) is injected toward the substrate (10). That is, the source gas contained in the source gas supply unit (4100) is supplied to the first gas injection unit (3000a) through the first connection pipe (4600a) and the first transfer pipe (4500a). Accordingly, the source gas is injected from the first gas injection unit (3000a). That is, the source gas containing silicon (Si) is injected into the interior of the chamber (1000) in which the substrate (10) is loaded. The source gas may be, for example, SiH2Cl2 (Dichlorosilane; DCS) gas. Of course, the source gas is not limited to the above-described materials, and various gases containing silicon (Si) may be used.

[0065] When a source gas is injected toward the substrate (10), the source gas is deposited or adsorbed on one surface of the substrate (10). Accordingly, a silicon (Si)-containing film (21) is deposited on the substrate (10) as shown in (a) of Fig. 2. More specifically, when SiH2Cl2 gas is used as the source gas, a SiH2Cl2 layer can be formed on the substrate (10). Here, the silicon-containing film (21) can be referred to as a single layer or atomic layer containing silicon.

[0066] When the step of injecting the source gas is completed, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) in which the substrate (10) is loaded (primary exhaust). In other words, the interior of the chamber (1000) is pumped. Here, the exhaust unit (8000) may be a means including a pipe connected to the chamber (1000) and a pump connected to the pipe.

[0067] In the above, it has been described that the interior of the chamber (1000) is exhausted after the step of injecting the source gas is completed. However, this is not limited to this, and the chamber (1000) may be exhausted while injecting a purge gas into the interior of the chamber (1000) after the step of injecting the source gas is completed.

[0068] When the first exhaust is completed, a first plasma is formed by injecting a carbon (C)-containing gas toward the silicon-containing film (21). To this end, the carbon-containing gas contained in the carbon-containing gas supply unit (4200) is supplied to the first gas injection unit (3000a) through the first connection pipe (4600a) and the first transfer pipe (4500a). Accordingly, the carbon-containing gas is injected from the first gas injection unit (3000a). That is, the carbon (C)-containing gas is injected into the interior of the chamber (1000) in which the substrate (10) is loaded.

[0069] In addition, a first plasma is formed by injecting a plasma forming gas while injecting a carbon (C) containing gas. For example, a hydrogen-containing gas can be used as the plasma forming gas. In order to form the first plasma using a hydrogen-containing gas, the hydrogen-containing gas contained in the hydrogen-containing gas supply unit (4300) is supplied to the second gas injection unit (3000b) through the second connection pipe (4600b) and the second transfer pipe (4500b). Accordingly, the hydrogen-containing gas is injected from the second gas injection unit (3000b). That is, a gas containing hydrogen (H) is injected into the interior of the chamber (1000) in which the substrate (10) is loaded. Here, the hydrogen-containing gas may be 'hydrogen gas'.

[0070] And, while injecting carbon-containing gas and hydrogen-containing gas, a first plasma is formed inside the chamber (1000). That is, the gas injected into the inside of the chamber (1000) is discharged to form the first plasma, and at this time, the first plasma may be hydrogen plasma. In order to form the first plasma, while injecting carbon-containing gas and hydrogen-containing gas into the inside of the chamber (1000), power or electric power is applied to the antenna (6100) using the power supply (6200). At this time, the power applied to the antenna (6100) may be RF (Radio Frequency) RF power (hereinafter, first RF power).

[0071] The first RF power may be greater than the second RF power applied in the step of forming the second plasma. In addition, the time required to form the first plasma may be shorter than the time required to form the second plasma that is formed later. That is, the time required to form the first plasma may be 2 to 5 seconds (2 to 5 seconds). That is, the first plasma is formed for 2 to 5 seconds.

[0072] In controlling the first RF power applied to the antenna (6100), the first RF power can be controlled from 600 Watt to 1000 Watt based on a substrate having a diameter, width, or length of 300 mm. For more specific examples, the first RF power can be controlled from 600 Watt to 800 Watt, or from 700 Watt to 900 Watt, or from 800 Watt to 1000 Watt. In another way, in controlling the first RF power applied to the antenna (6100), the first RF power can be controlled from 8.5 mmW / mm per unit area of ​​the substrate. 2 14.1 mmW / mm 2 can be adjusted. As a more specific example, the first RF power applied per unit area of ​​the substrate is 8.5 mmW / mm 2 10.1 mmW / mm 2 or 9.9 mmW / mm2 12.7 mmW / mm 2 Adjust to 10.1 mmW / mm 2 14.1 mmW / mm 2 can be adjusted.

[0073] Here, since the antenna (6100) is connected to the chamber (1000), applying the first RF power to the antenna (6100) may mean applying the first RF power to the chamber (1000).

[0074] By controlling the first RF power in this way, the amount of carbon (C) deposited on the silicon-containing film (21) can be increased. In other words, an amorphous carbon-containing film (20) containing a large amount of carbon (C) can be formed.

[0075] The above describes forming a first plasma (hydrogen plasma) by injecting a hydrogen-containing gas. However, in forming the first plasma, a gas other than the hydrogen-containing gas may be used. That is, the first plasma may be formed by injecting a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas while injecting a carbon-containing gas. In other words, the first plasma may be formed by injecting at least one of hydrogen-containing gas, argon gas, and helium gas, and a carbon-containing gas.

[0076] In injecting at least one of argon gas and helium gas, the gas contained in at least one of the argon gas supply unit (4400) and the helium gas supply unit (4700) is supplied to the second gas injection unit (3000b) through the second connection pipe (4600b) and the second transfer pipe (4500b). Accordingly, at least one of the argon gas and the helium gas is injected from the second gas injection unit (3000b).

[0077] When a carbon-containing gas is injected, carbon (C) can be deposited on the silicon-containing film (21). And, when the first plasma is formed as described above while injecting the carbon-containing gas, the amount of carbon (C) deposited or bonded on the silicon-containing film (21) can be increased. That is, the formation of the first plasma can promote the deposition or bonding of carbon (C) on the silicon-containing film (10). Therefore, a carbon-containing film (20) having a large amount of carbon (C) can be formed. At this time, the temperature of the substrate (10) is 200°C to 1200°C, and the carbon-containing film (20) formed by forming the first plasma can be amorphous.

[0078] And, since carbon (C) is deposited by spraying a carbon-containing gas onto the silicon-containing film (21), the carbon-containing film (20) may contain silicon (Si) in addition to carbon (C). That is, if the first plasma is not formed, carbon (C) is bonded or deposited onto the silicon-containing film (21), so the film formed by spraying a carbon-containing gas toward the silicon-containing film (21) may be a silicon carbide (SiC) film. In other words, if the first plasma is not formed while spraying a carbon (C)-containing gas, a carbon-containing film containing a large amount of silicon (Si) may be formed.

[0079] In the embodiment, a first plasma is formed by injecting a carbon-containing gas, and the temperature of the substrate (10) is controlled to 200°C to 1200°C while the process is being performed. Accordingly, among the carbon (C) and silicon (Si) contained in the carbon-containing film (20), silicon (Si) can be separated from the carbon-containing film (20). That is, not only carbon (C) but also silicon (Si) can be contained on the carbon-containing film, and by forming the first plasma, silicon (Si) contained in the carbon-containing film (20) can be sublimated and removed.

[0080] Meanwhile, when the temperature of the substrate (10) is less than 200°C, the amount of carbon contained in the carbon-containing film (20) may be small. In addition, when the temperature of the substrate (10) is less than 200°C, a large amount of silicon (Si) may be contained in the carbon-containing film (20). Accordingly, the content ratio of carbon (C) contained in the amorphous carbon-containing film (20) is small, and the quality of the carbon-containing film (20) may deteriorate. Conversely, when the temperature of the substrate (10) exceeds 1200°C, there is a problem that the temperature of the substrate increases or the power consumption for plasma formation increases. In addition, the film (sublayer) formed under the carbon-containing film (20) may be damaged by heat.

[0081] In addition, when using a substrate having a diameter, width, or length of 300 mm, if the first RF power applied to the antenna (6100) is less than 600 Watt, the amount of carbon contained in the carbon-containing film (20) may be small, and a large amount of silicon (Si) may be contained in the carbon-containing film (20). Accordingly, the content ratio of carbon (C) contained in the amorphous carbon-containing film (20) may be small, and the quality of the carbon-containing film (20) may deteriorate. Conversely, when using a substrate having a diameter, width, or length of 300 mm, if the first RF power applied to the antenna (6100) exceeds 1000 Watt, there is a problem that the temperature of the substrate increases or the power consumption for plasma formation increases. In addition, a film (sublayer) formed under the carbon-containing film (20) may be damaged by heat.

[0082] And, in controlling the first RF power applied to the antenna (6100), the power per unit area of ​​the substrate is 8.5 mmW / mm 2If it is less than, the amount of carbon contained in the carbon-containing film (20) may be small, and a large amount of silicon (Si) may be contained in the carbon-containing film (20). Accordingly, the content ratio of carbon (C) contained in the amorphous carbon-containing film (20) is small, and the quality of the carbon-containing film (20) may be deteriorated. Conversely, in controlling the first RF power applied to the antenna (6100), the power per unit area of ​​the substrate may be 14.1 mmW / mm 2 If it exceeds , there is a problem of increased temperature of the substrate or increased power consumption for plasma formation. In addition, the film (sub-film) formed under the carbon-containing film (20) may be damaged by heat.

[0083] When the step of forming the first plasma is completed, a second plasma is formed inside the chamber (1000). For example, while injecting a hydrogen-containing gas into the interior of the chamber (1000), a second RF power is applied to the antenna (6100) using the power supply unit (6200). More specifically, the hydrogen-containing gas contained in the hydrogen gas supply unit (4300) is supplied to the second gas injection unit (3000b) through the second connection pipe (4600b) and the second transfer pipe (4500b). Accordingly, the hydrogen-containing gas is injected from the second gas injection unit (3000b). That is, the hydrogen-containing gas is injected into the interior of the chamber (1000). Then, a second RF power is applied to the antenna (6100) using the power supply unit (6200). Therefore, a second plasma, i.e., hydrogen plasma, can be formed.

[0084] At this time, a second RF power smaller than the first RF power applied when forming the first plasma is applied to the antenna (6100). In addition, the second plasma may be formed for a longer time than the time taken to form the first plasma. That is, the time taken to form the second plasma may be greater than 5 seconds and less than or equal to 7 seconds. That is, the second plasma is formed for a time greater than 5 seconds and less than or equal to 7 seconds.

[0085] In controlling the second RF power applied to the antenna (6100), the second RF power can be controlled from 50 Watts to 300 Watts based on a substrate having a diameter, width, or length of 300 mm. For more specific examples, the second RF power can be controlled from 50 Watts to 100 Watts, or from 80 Watts to 200 Watts, or from 100 Watts to 300 Watts. In another way, in controlling the second RF power applied to the antenna (6100), 0.7 mmW / mm per unit area of ​​the substrate 2 4.2 mmW / mm 2 can be adjusted. As a more specific example, the second RF power applied per unit area of ​​the substrate is 0.7 mmW / mm 2 1.4 mmW / mm 2 Adjust to 1.1 mmW / mm 2 2.8 mmW / mm 2 Adjust to 1.4 mmW / mm 2 4.2 mmW / mm 2 can be adjusted.

[0086] Here, since the antenna (6100) is connected to the chamber (1000), applying the second RF power to the antenna (6100) may mean applying the second RF power to the chamber (1000).

[0087] By forming the second plasma in this way, the amorphous carbon-containing film (20) can be exposed to hydrogen plasma (second plasma). When the carbon-containing film (20) is exposed to the second plasma, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film (20) can be densified. That is, by forming the second plasma by controlling the second RF power in the manner described above, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film can be densified. Accordingly, a densified amorphous carbon-containing film (20) with little or no impurity content is formed.

[0088] The above describes forming a second plasma (hydrogen plasma) by injecting a hydrogen-containing gas. However, in forming the second plasma, a gas other than the hydrogen-containing gas can be used. That is, while injecting a carbon-containing gas, a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas can be injected to form the second plasma. In other words, the second plasma can be formed by injecting at least one of hydrogen-containing gas, argon gas, and helium gas, and a carbon-containing gas.

[0089] Meanwhile, in forming a second plasma under conditions of forming a carbon-containing film on a substrate having a diameter, width, or length of 300 mm, if the second RF power applied to the antenna (6100) is less than 50 Watt, the amount of impurities removed from the carbon-containing film (20) may be small, or a carbon-containing film that is not dense may be formed. In addition, if the second RF power applied to the antenna (6100) exceeds 300 Watt, there may be a problem of increased power consumption for plasma formation, and a lower film formed under the carbon-containing film (20) may be damaged by heat.

[0090] And, in controlling the second RF power applied to the antenna (6100), the power per unit area of ​​the substrate is 0.7 mmW / mm 2 If it is less than 4.2 mmW / mm, the amount of impurities removed from the carbon-containing film (20) may be small, or a carbon-containing film that is not dense may be formed. Conversely, in controlling the second RF power applied to the antenna (6100), the power per unit area of ​​the substrate may be 4.2 mmW / mm. 2 If it exceeds , there may be a problem that the power consumption for plasma formation increases, and the lower film formed at the bottom of the carbon-containing film (20) may be damaged by heat.

[0091] Afterwards, the exhaust unit (8000) is operated to exhaust the interior of the chamber (1000) in which the substrate (10) is loaded (secondary exhaust).

[0092] A process including the source gas injection step, the first exhaust step, the first plasma step, the second plasma formation step, and the second exhaust step as described above can be considered as one carbon-containing film formation cycle (CY). That is, the cycle (C) for forming a carbon-containing film can include 'source gas injection step - first exhaust step - first plasma formation step - second plasma formation step - second exhaust step'. In addition, the carbon-containing film formation cycle (CY) can be performed once or more times consecutively to form a carbon-containing film (20) having a target thickness.

[0093]

[0094] In the above, when forming a first plasma by injecting a hydrogen-containing gas, it has been described that a carbon-containing gas and a hydrogen-containing gas are supplied and injected separately. However, a gas containing both carbon and hydrogen may also be supplied into the interior of the chamber (1000). To this end, the substrate processing device may be provided with a mixed gas storage unit for supplying a mixed gas containing carbon and hydrogen, and the mixed gas storage unit may be connected to at least one of the first gas injection unit (3000a) and the second gas injection unit (3000b). Accordingly, the mixed gas of the mixed gas storage unit may be injected into the interior of the chamber (1000) through at least one of the first and second gas injection units (3000a, 3000b). At this time, the mixed gas containing carbon and hydrogen may be, for example, methane (CH4) gas. Of course, the mixed gas containing carbon and hydrogen is not limited to the above-described example, and various gases containing carbon and hydrogen may be applied.

[0095] And, when a first plasma is formed by injecting a mixed gas containing carbon and hydrogen, the bond between carbon (C) and hydrogen (H) can be broken by the first plasma. And, the hydrogen (H) separated from the carbon (C) can be carried away in a gas or gaseous state and removed.

[0096] In addition, the method for forming a carbon-containing film described above includes an exhaust step. However, the method for forming a carbon-containing film is not limited thereto, and the method for forming a carbon-containing film may include a purge step, and exhaust and purge of the chamber may be performed simultaneously. That is, the method for forming a carbon-containing film may further include at least one of an exhaust and purge step performed between the source gas injection step and the first plasma formation step, and an exhaust and purge step performed after the first plasma formation step.

[0097]

[0098] Figures 4 (a) to (d) are process diagrams conceptually illustrating a method for forming a carbon-containing film on a substrate using a method according to a second embodiment of the present invention.

[0099] The carbon-containing film formation cycle (CY) according to the second embodiment may further include a plasma formation step (hereinafter, referred to as a third plasma formation step) between the source gas injection step and the first plasma formation step, compared to the first embodiment. More specifically, the carbon-containing film formation cycle (CY) according to the second embodiment may further include a step of forming a third plasma between the source gas injection step and the first exhaust step. That is, the carbon-containing film formation cycle (CY) according to the second embodiment may include 'source gas injection step - third plasma formation step - first exhaust step - first plasma formation step - second plasma formation step - second exhaust step'. At this time, at least one of the first exhaust step and the second exhaust step may be omitted in the carbon-containing film formation cycle (CY). In addition, the carbon-containing film formation cycle (CY) as described above may be performed n times (n: 1, 2, 3, …). That is, the step of forming a carbon-containing film may include one (n=1) or two or more (n ≥ 2) carbon-containing film formation cycles (CY). Here, two or more times may mean multiple times.

[0100] Meanwhile, the silicon-containing source gas may contain impurities other than silicon (Si), and thus the silicon-containing film may contain impurities. In addition, the quality of the carbon-containing film (20) may be deteriorated by the impurities contained in the silicon-containing film.

[0101] Therefore, in the embodiment, a silicon-containing film (21) is formed on a substrate (10) by injecting a source-containing gas, and then a third plasma is formed to remove impurities from the silicon-containing film (21). Since the third plasma is formed using a hydrogen-containing gas, the third plasma may be hydrogen plasma.

[0102] The third plasma can be formed by injecting a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas and applying RF power to the chamber.

[0103] When a third plasma is formed after forming a silicon-containing film (21), the silicon-containing film (21) is exposed to the third plasma. At this time, the silicon-containing film (21) and the third plasma react, so that impurities can be separated or removed from the silicon-containing film (21). Therefore, the quality of the carbon-containing film (20) can be improved.

[0104]

[0105] The substrate processing device for forming a carbon-containing film (20) is not limited to the first substrate processing device illustrated in FIG. 3. The carbon-containing film (20) may also be formed using the second substrate processing device illustrated in FIGS. 5 to 10.

[0106] FIG. 5 is a schematic diagram of a second substrate processing device capable of forming a carbon-containing film according to embodiments of the present invention. FIG. 6 is a schematic perspective view of a substrate support unit in the second substrate processing device. FIG. 7 is a plan view of the substrate support unit in the second substrate processing device. FIG. 8 is a schematic side cross-sectional view of a spray unit in the second substrate processing device. FIG. 9 is a schematic plan view of a spray unit in the second substrate processing device.

[0107] Hereinafter, a second substrate processing device capable of forming a carbon-containing film will be described with reference to FIGS. 5 to 9. Here, the second substrate processing device capable of forming a carbon-containing film using the method according to the first embodiment will be described as an example.

[0108] Referring to Fig. 5, the second substrate processing device (1) performs a process on a substrate (10). The substrate (10) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The second substrate processing device (1) may perform a deposition process for depositing a thin film on the substrate (10). Of course, the second substrate processing device (1) may also perform an etching process for removing a portion of the thin film deposited on the substrate (10).

[0109] The second substrate processing device (1) may include a chamber (2), a substrate support unit (3), an injection unit (4), a gas storage unit (40a), and a power supply unit (40b). In addition, although not shown, a heater capable of controlling the temperature of at least one of the chamber (2) and the substrate support unit (3) may be installed in at least one of the chamber (2) and the substrate support unit (3).

[0110] Referring to FIG. 5, the chamber (2) can provide a processing space (SP). A process for the substrate (10) can be performed in the processing space (SP). Accordingly, the processing space (SP) can be referred to as a 'process space'. The processing space (SP) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (SP) can be coupled to the chamber (2). The substrate support unit (3) and the injection unit (4) can be arranged inside the chamber (2).

[0111] Referring to FIGS. 5 to 7, the substrate support unit (3) supports the substrate (10). The substrate support unit (3) can support a plurality of substrates (10). Accordingly, the second substrate processing device (1) can perform a process on a plurality of substrates (10) at a time. The substrate support unit (3) can be coupled to the chamber (2). The substrate support unit (3) can be placed inside the chamber (2).

[0112] The substrate support member (3) may include a support surface (31). The support surface (31) may be a surface of the substrate support member (3) arranged to face the injection member (4). When the substrate support member (3) is arranged below the injection member (4), the support surface (31) may correspond to the upper surface of the substrate support member (3). The substrates (10) may be supported on the support surface (31).

[0113] The substrate support member (3) can support the substrates (10) in an outer region (33) disposed outside the central region (32). The outer region (33) can be disposed to surround the central region (32). Accordingly, the central region (32) can be disposed inside the outer region (33). When the central region (32) is formed in a circular shape, the outer region (33) can be formed in a circular ring shape surrounding the central region (32). The substrates (10) can be disposed to be spaced apart from each other along the outer region (33). In this case, the substrates (10) can be supported on the support surface (31) so as to be spaced apart from each other at the same angle with respect to the central axis (30) of the substrate support member (3) in the outer region (33). When the substrate support part (3) is rotated during the above process, the substrate support part (3) can be rotated around the central axis (30). When the support surface (31) is formed in a circular shape, the central axis (30) may correspond to the center of the support surface (31). Meanwhile, since the substrates (10) are supported on the support surface (31) in the outer region (33), the substrates (10) are not positioned in the central region (32). When the central region (32) is formed in a circular shape, the diameter of the central region (32) may be implemented to be larger than the diameter (D, illustrated in FIG. 7) of the substrate (10) and smaller than twice the diameter (D) of the substrate (10). The diameter of the central region (32) may also be implemented to be smaller than the diameter (D) of the substrate (10).

[0114] The gas storage unit (40a) stores gas and supplies the gas to the injection unit (4). That is, the gas storage unit (40a) stores gas for forming a carbon-containing film (20) according to embodiments of the present invention and supplies the gas to the injection unit (4).

[0115] Although one gas storage unit (40a) is illustrated in FIG. 5, a plurality of gas storage units may be provided. That is, the gas storage unit (40a) may include a gas storage unit storing a silicon-containing gas and a gas storage unit storing a carbon-containing gas. In addition, the gas storage unit (40a) may include a gas storage unit storing a plasma-forming gas. And the plasma-forming gas may be one of a hydrogen-containing gas, an argon gas, and a helium gas, or a combination thereof. Accordingly, the gas storage unit (40a) may include one of a gas storage unit storing a hydrogen-containing gas, a gas storage unit storing an argon gas, and a gas storage unit storing a helium gas, or a combination thereof.

[0116] Referring to FIGS. 5 to 8, the injection unit (4) injects gas toward the substrate support unit (3). The injection unit (4) can inject gas toward the support surface (31). The injection unit (4) can be connected to a gas storage unit (40a). In this case, the injection unit (4) can inject gas supplied from the gas storage unit (40a) toward the substrate support unit (3). That is, the injection unit (4) injects a silicon-containing gas or a carbon-containing gas supplied from the gas storage unit (40a), and injects a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas toward the substrate support unit (3).

[0117] The above-mentioned injection unit (4) may be arranged inside the chamber (2). The injection unit (4) may be arranged to face the substrate support unit (3). The injection unit (4) may be arranged on the upper side of the substrate support unit (3). The processing space (SP) may be arranged between the injection unit (4) and the substrate support unit (3). The injection unit (4) may be coupled to a lid (not shown). The lid may be coupled to the chamber (2) so as to cover the upper portion of the chamber (2).

[0118] The above-mentioned injection unit (4) can inject gas only toward the outer region (33). In this case, the injection unit (4) is implemented so as not to inject gas toward the central region (32). That is, the injection unit (4) can inject gas toward the outer region (33) excluding the central region (32). Accordingly, the second substrate processing device (1) is implemented so as not to inject gas toward the portion of the support surface (31) where the substrate (10) is not present [i.e., the central region (32)], but to inject gas only toward the portion of the support surface (31) where the substrates (10) are present [i.e., the outer region (33)].

[0119] Accordingly, the second substrate processing device (1) can reduce the flow rate of gas that is wasted by flowing to the central region (32) where the substrate (10) is not present and thus cannot participate in the process. Accordingly, the second substrate processing device (1) can reduce operating costs by reducing the flow rate of wasted gas, thereby contributing to lowering the manufacturing cost of the substrate (10) on which the process is performed.

[0120] In addition, since the second substrate processing device (1) is implemented to intensively inject gas toward the outer region (33) where the substrates (10) are located, the flow rate of the gas involved in the process can be increased by flowing into the outer region (33) where the substrates (10) are located. Accordingly, the second substrate processing device (1) can improve the quality of the substrate (10) on which the process is performed.

[0121] The above-described injection unit (4) can inject the same gas to all of the outer regions (33). When performing the process using a plurality of gases, the injection unit (4) can sequentially repeat the process of injecting the same gas to all of the outer regions (33). In this case, the injection unit (4) can perform the process in a time-divided deposition (TSD) manner in which the plurality of gases are injected by dividing time. For example, when performing the process using a silicon-containing gas, a carbon-containing gas, and a hydrogen-containing gas, the injection unit (4) can inject the carbon-containing gas and the hydrogen-containing gas to all of the outer regions (33) after injecting the silicon-containing gas to all of the outer regions (33) and then stopping the injection of the silicon-containing gas. Thereafter, the injection unit (4) can inject the hydrogen-containing gas to all of the outer regions (33) while stopping the injection of the carbon-containing gas.

[0122] The above-mentioned injection unit (4) can inject gas only toward the outer region (33) having a width (H, as shown in FIG. 7) greater than the diameter (D) of the substrate (10). In this case, the width (H) of the outer region (33) may be implemented to be equal to or longer than the diameter (D) of the substrate (10). Accordingly, the second substrate processing device (1) is implemented to inject gas toward the entire surface of one side of the substrate (10) facing the injection unit (4), for all of the substrates (10) placed in the outer region (33). Therefore, the second substrate processing device (1) can improve the uniformity of the process for each of the substrates (10). Meanwhile, the width (H) of the outer region (33) may mean the length of a portion belonging to the outer region (33) on an imaginary line passing through the central axis (30) of the substrate support member (3).

[0123] The above-described injection unit (4) can be connected to a power supply unit (40b). The power supply unit (40b) can apply plasma power to the injection unit (4). For example, the plasma power supply can be RF power. Using the plasma power supplied from the power supply unit (40b), the injection unit (4) can generate plasma and inject activated gas only toward the outer region (33). Accordingly, the second substrate processing device (1) can further improve the quality of the substrate (10) on which the process has been performed by performing crystallization, film densification, impurity removal, etc. on the thin film formed on each of the substrates (10) using plasma. When plasma is generated in the processing space (SP), the plasma can be generated only in a portion of the processing space (SP) corresponding to the outer region (33). When plasma is generated inside the injection unit (4), plasma can be generated only in the part of the injection unit (4) corresponding to the outer region (33).

[0124] The above-mentioned injection unit (4) can inject a silicon-containing gas only toward the outer region (33), then inject a carbon-containing gas and a plasma-forming gas only toward the outer region (33), and then inject the plasma-forming gas only toward the outer region (33). In this case, the second substrate processing device (1) can be implemented to form a thin film on the substrate (10) by an atomic layer deposition (ALD) method. The above-mentioned injection unit (4) can inject a gas toward the entire surface of the support surface (31) belonging to the outer region (33).

[0125] Accordingly, the second substrate processing device (1) can be implemented so that a carbon-containing film is formed on all of the substrates (10) disposed in the outer region (33) by a reaction using a carbon-containing gas and a plasma forming gas after the source material of the silicon-containing gas is adsorbed onto all of the substrates (10) disposed in the outer region (33). In addition, by injecting the plasma forming gas toward the substrates (10) disposed in the outer region (33) to form plasma, impurities can be removed from the carbon-containing film. Therefore, the second substrate processing device (1) can reduce the processing time required until the process is completed on all of the substrates (10) disposed in the outer region (33), and thus can increase the productivity of the substrates (10) on which the process is completed. In addition, the second substrate processing device (1) can reduce the deviation of process conditions between the substrates (10) placed in the outer region (33), thereby improving the uniformity of quality between the substrates (10) on which the process is performed.

[0126] Here, the plasma forming gas may be a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas.

[0127] The above-described injection unit (4) may further inject purge gas. For this purpose, the gas storage unit (40a) may further include a gas storage unit storing the purge gas. In addition, the injection unit (4) may inject the silicon-containing gas, the carbon-containing gas, and the plasma forming gas only toward the outer region (33). The purge gas injected between the silicon-containing gas injection step and the carbon-containing gas injection step may purge the silicon-containing gas remaining in the processing space (SP) (first purge). In addition, the purge gas injected after the carbon-containing gas injection step may purge the carbon-containing gas and the plasma forming gas remaining in the processing space (SP) (second purge). The purge gas does not participate in the process, and an inert gas such as argon (Ar) may be used, for example. By using the first purge gas and the second purge gas, the second substrate processing device (1) may further improve the quality of the thin film formed on the substrate (10) by the atomic layer deposition (ALD) method.

[0128] The above injection unit (4) may include a first gas path (41) and a second gas path (42).

[0129] The first gas path (41) above is for injecting the first gas. One side of the first gas path (41) may be connected to the gas storage unit (40a) via a pipe, hose, gas block, or the like. The other side of the first gas path (41) may be connected to the processing space (SP). Accordingly, the first gas supplied from the gas storage unit (40a) may flow along the first gas path (41) and then be injected into the processing space (SP) through the first gas path (41). The first gas path (41) may function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (SP).

[0130] The second gas path (42) is for injecting the second gas. The second gas and the first gas may be different gases. For example, the first gas passing through the first gas path (41) may be a silicon-containing gas (source gas) or a carbon-containing gas, and the second gas passing through the second gas path (42) may be a hydrogen-containing gas or a discharge gas. Of course, the opposite case is also possible, and the types of gases passing through the first gas path (41) and the second gas path (42) may be variously changed. The second gas path (42) may have one end connected to the gas storage unit (40a) through a pipe, hose, gas block, or the like. The other end of the second gas path (42) may be connected to the processing space (SP). Accordingly, the second gas supplied from the gas storage unit (40a) can flow along the second gas path (42) and then be injected into the processing space (SP) through the second gas path (42). The second gas path (42) can function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (SP).

[0131] The second gas path (42) and the first gas path (41) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit (40a) to the second gas path (42) can be injected into the processing space (SP) without passing through the first gas path (41). The first gas supplied from the gas storage unit (40a) to the first gas path (41) can be injected into the processing space (SP) without passing through the second gas path (42). In this case, the second gas path (42) can inject the second gas only toward the outer region (33). The first gas path (41) can inject the first gas only toward the outer region (33).

[0132] Referring to Fig. 8, the injection unit (4) may include a first electrode (43) and a second electrode (44). The first electrode (43) may be disposed on the upper side of the substrate support unit (3) so as to face the substrate support unit (3). The first electrode (43) may be grounded, thereby functioning as a ground electrode. The first electrode (43) may include the first gas passage (41) and the second gas passage (42). Accordingly, the first electrode (43) may inject the first gas through the first gas passage (41) and the second gas through the second gas passage (42). The first gas path (41) and the second gas path (42) can be arranged to be spatially separated from each other inside the first electrode (43).

[0133] The first gas path (41) may include a first connection hole (411) connected to the gas storage unit (40a) and a plurality of first injection holes (412) connected to the first connection hole (411). The first connection hole (411) and the first injection holes (412) may be formed inside the first electrode (43). One side of the first injection holes (412) may be connected to the first connection hole (411), and the other side may be connected to the processing space (SP). Accordingly, the first gas discharged from the gas storage unit (40a) may flow along the first connection hole (411) and then be injected into the processing space (SP) through the first injection holes (412).

[0134] The second gas path (42) may include a second connection hole (421) connected to the gas storage unit (40a) and a plurality of second injection holes (422) connected to the second connection hole (421). The second connection hole (421) and the second injection holes (422) may be formed inside the first electrode (43). One side of the second injection holes (422) may be connected to the second connection hole (421), and the other side may be connected to the processing space (SP). Accordingly, the second gas discharged from the gas storage unit (40a) may flow along the second connection hole (421) and then be injected into the processing space (SP) through the second injection holes (422). That is, the second injection hole (422) of the second gas path (42) formed in the first electrode (43) injects gas toward the upper portion of the second electrode (44).

[0135] The first electrode (43) may include a base electrode (43a) extending in the direction in which the substrate support portion (3) extends, and a protruding electrode (43b) extending downwardly from the lower surface of the base electrode (43a). The protruding electrode (43b) may have a shape extending from the lower surface of the base electrode (43a) in the direction in which the substrate support portion (3) is positioned. A plurality of such protruding electrodes (43b) may be provided, and the plurality of protruding electrodes (43b) may be arranged to be spaced apart from each other.

[0136] When the first electrode (43) includes a base electrode (43a) and a protruding electrode (43b), each of the first connecting hole (411), the second connecting hole (421), and the second injection hole (422) may be provided in the base electrode (43a). At this time, the first and second connecting holes (411, 421) may have a shape extending in the direction in which the base electrode (43a) extends, for example. In addition, the second injection hole (422) may extend in the vertical direction, one end may be connected to the second connecting hole (421), and the other end may be connected to the processing space (SP). In addition, the first injection hole (412) of the first gas path (41) may be provided to extend from the base electrode (43a) to the protruding electrode (43b). That is, the first injection hole (412) can be formed by vertically penetrating the protruding electrode (43b), and one end in the extension direction can be connected to the first connection hole (411) and the other end can be connected to the processing space (SP). In other words, the first injection hole (412) of the first gas path (41) is formed inside the protruding electrode (43b). Since the first connection hole (411) is formed in the base electrode (43a), the first injection hole (412) can be vertically penetrating a part of the base electrode (43a) and connected to the first connection hole (411).

[0137] The second electrode (44) may include a hole (44a) into which a protruding electrode (43b) may be inserted. The hole (44a) may be formed by penetrating the second electrode (44). This hole (44a) may function as a passage for passing gas discharged from the first electrode (43). The number of holes (44a) may be the same as that of the protruding electrodes (43b), and the holes (44a) may be formed at positions facing the protruding electrodes (43b). In addition, a protruding electrode (43b) may be inserted into each of a plurality of holes (44a). That is, the protruding electrode (43b) penetrates the hole (44a) formed in the second electrode (44). The inner diameter (or width) of the hole (44a) may be larger than the diameter (or width) of the protruding electrode (43b), and the vertical length of the hole (44a) may be smaller than the vertical length of the protruding electrode (43b).

[0138] When the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) formed in the second electrode (44), the height of the lower surface of the protruding electrode (43b) is the same as the height of the lower surface of the second electrode (44). Accordingly, the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) are spaced apart from each other, and the spaced space is communicated with the second injection hole (422). That is, the second electrode (44) is separately disposed below the first electrode (43).

[0139] In addition, when the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) of the second electrode (44), the outer surface of the protruding electrode (43b) is inserted so as to be spaced apart from the inner surface of the second electrode (44) surrounding the hole (44a). Accordingly, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the space between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44). In addition, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the processing space (SP). Therefore, the gas discharged from the second injection hole (422) can pass through the hole (44a) provided in the second electrode (44) and be injected toward the substrate support member (3). That is, the second gas discharged from the second injection hole (422) can pass through the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44), and then pass through the hole (44a) provided in the second electrode (44) and be injected to the lower side of the hole (44a). At this time, when the second gas passes through the hole (44a), it passes along the outer space of the protruding electrode (43b).

[0140] An insulating member (not shown) for partial insulation may be disposed between the second electrode (44) and the first electrode (43). RF power may be applied to the second electrode (44). When the first electrode (43) is grounded and the RF power is applied to the second electrode (44), plasma may be generated. That is, plasma may be generated in the space between the first electrode (43) and the second electrode (44). More specifically, plasma may be generated in the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and in the hole (44a). In addition, the plasma thus formed may be used to activate gas, and the activated gas may be injected into the processing space (SP).

[0141] In the above, it was described that plasma is formed by grounding the first electrode (43) and applying RF power to the second electrode (44). However, this is not limited to this, and plasma may be formed by applying RF power to the first electrode (43) and grounding the second electrode (44). In addition, plasma may be formed by applying a positive (+) voltage to one of the first electrode (43) and the second electrode (44) and connecting a negative (-) electrode to the other electrode.

[0142] The injection unit (4) injects gas toward the substrate support unit (3). At this time, the injection unit (4) may be provided so as to inject gas only toward the outer region (33) of the support surface (31) of the substrate support unit (3). In this case, the injection unit (4) is provided so as not to inject gas toward the central region (32) of the substrate support unit (3). The injection unit (4) may be provided so as not to inject gas toward the central region (32) of the support surface (31) where the substrate (10) is not supported, but only toward the outer region (33) of the support surface (31) where the substrate (10) is supported.

[0143] To this end, as illustrated in FIG. 9, the first injection hole (412) and the hole (44a) can be provided only in the area facing the outer region (33) of the substrate support portion (3). That is, when the protruding electrode (43b) is connected to the lower surface of the base electrode (43a), the protruding electrode (43b) can be connected only in the area facing the outer region (33) of the substrate support portion (3) among the lower surfaces of the base electrode (43a). In addition, since the first injection hole (412) is provided by vertically penetrating the protruding electrode (43b), the first injection hole (412) is formed only in the area facing the outer region of the substrate support portion (3). In addition, when forming a plurality of holes (44a) in the second electrode (44), they are formed only in the area facing the outer region (33) of the substrate support portion (3), and are formed at positions into which the protruding electrode (43b) can be inserted. Accordingly, a plurality of holes (44a) are formed only in the outer region (33) of the substrate support member (3). Accordingly, the first gas passing through the first injection hole (412) and the second gas or plasma passing through the hole (44a) can be injected only into the outer region of the substrate support member (3).

[0144] Accordingly, the second substrate processing device (1) can reduce the flow rate of gas that is wasted by flowing to the central region (32) where the substrate (10) is not supported and thus cannot participate in the process. Accordingly, the second substrate processing device (1) can reduce operating costs by reducing the flow rate of wasted gas. In addition, the manufacturing cost required to manufacture the carbon-containing film (20) can be lowered.

[0145] In addition, the second substrate processing device (1) intensively sprays gas toward the outer region (33) where the substrate (10) is supported, so that the flow rate of the gas involved in the process can be increased by flowing to the outer region (33) where the substrate (10) is supported. Therefore, the second substrate processing device (1) can improve the yield.

[0146]

[0147] Figure 10 is a schematic plan view of a modified example of the injection unit in the second substrate processing device.

[0148] In the above, it has been described that the injection unit (4) is provided so as to be able to inject gas only to the outer region of the substrate support unit (3). However, the present invention is not limited thereto, and the injection unit (4) may be provided so as to be able to inject gas to both the central region (32) and the outer region (33) of the substrate support unit (3). That is, the injection unit (4) may be provided so as to be able to inject gas to the entire support surface (31) of the substrate support unit (3). To this end, as illustrated in FIG. 10, the first injection hole (412) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3), and the hole (44a) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3).

[0149]

[0150] In addition, the above described case in which the substrate (10) is mounted on the outer region (33) of the substrate support part (3) as shown in FIGS. 6 and 7, and the substrate (10) is not mounted on the central region (32) is described. However, the present invention is not limited thereto, and the substrate support part (3) may be provided so that the substrate (10) can be mounted on both the outer region (33) and the central region (32). In addition, the above described case in which a plurality of substrates (10) are supported by the substrate support part (3) is not limited thereto, and a single substrate (10) may be supported.

[0151]

[0152] FIG. 11 is a flowchart schematically illustrating a method for forming a carbon-containing film according to an embodiment of the present invention using a second substrate processing device.

[0153] Hereinafter, with reference to FIGS. 2, 5 to 9, and 11, a method for forming an amorphous carbon-containing film (20) using a second substrate processing device (1) according to the first embodiment will be described. At this time, a plurality of substrates (10) are supported on an outer region (33) of a support surface (31) of a substrate support portion (3), and an injection portion (4) injects gas only to the outer region (33) of the support surface (31) of the substrate support portion (3).

[0154] First, the substrate (10) is loaded into the chamber (2) and then the substrate (10) is seated (S10). This step (S10) can be performed by seated a plurality of substrates (10) on the substrate support member (3). The substrates (10) can be seated on the outer region (33) of the support surface (31) of the substrate support member (3). In this case, the substrate (10) is not seated on the central region (32) of the support surface (31) of the substrate support member (3). The step (S10) of seated the substrate can be performed by seated the substrate (10) on the substrate support member (3) by a transport robot (not shown) for transporting the substrate (10).

[0155] And the temperature of the substrate (10) is adjusted to 200°C to 1200°C. At this time, the temperature of the substrate (10) can be adjusted using a heater connected to at least one of the substrate support member (3) and the chamber (2).

[0156] Next, a process is performed (S20). This step (S20) can be performed by injecting gas only toward the outer region (33) and performing the process on the substrates (10) placed in the outer region (33). In this case, the process can be performed on the substrates (10) by having the injection unit (4) inject gas only toward the outer region (33) and not injecting gas toward the central region (32).

[0157] Accordingly, the flow rate of gas that flows to the central region (32) where there is no substrate (10) and is wasted without participating in the process can be reduced. Accordingly, by reducing the flow rate of wasted gas, the operating cost can be reduced, thereby contributing to lowering the manufacturing cost of the substrate (10) on which the process is performed. In addition, since the gas is implemented to be intensively injected toward the outer region (33) where the substrates (10) are located, the flow rate of gas that flows to the outer region (33) where the substrates (10) are located and participates in the process can be increased. Therefore, the quality of the substrate (10) on which the process is performed can be improved.

[0158] Here, the width (H) of the outer region (33) may be implemented to be equal to or longer than the diameter of the substrate (10). Accordingly, the step (S20) of performing the process may inject gas only toward the outer region (33) having a width (H) greater than or equal to the diameter (D) of the substrate (10). Accordingly, for all of the substrates (10) arranged in the outer region (33), the gas is implemented to be injected toward the entire surface of one side of the substrate (10) facing the injection unit (4). Therefore, the uniformity of the process for each of the substrates (10) may be improved.

[0159] The step (S20) of performing the process may include a step (S21) of injecting a silicon-containing gas (hereinafter, source gas), a step (S22) of forming a first plasma (hydrogen plasma) by injecting a carbon-containing gas and a hydrogen-containing gas, and a step (S23) of forming a second plasma (hydrogen plasma) by injecting a hydrogen-containing gas.

[0160] The step (S21) of injecting the source gas may be performed by injecting a source gas containing silicon onto the substrates (10) disposed in the outer region (33). This step (S21) may be performed by injecting the source gas only toward the outer region (33) to adsorb the source material onto the substrates (10). The step (S21) of injecting the source gas may be performed by the injection unit (4) injecting the source gas only toward the outer region (33). For the source gas injection, the source gas is supplied to the first connection hole (411) of the injection unit (4) using the gas storage unit (40a). Accordingly, the source gas supplied to the first connection hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support unit (3). At this time, the source gas may be injected only toward the outer region (33). The step (S21) of injecting the source gas may be performed by injecting not only through the first injection hole (412) but also through the hole (44a). In this case, the injection unit (4) may inject the source gas through both the first gas path (41) and the second gas path (42). When the source gas is injected to the substrate support unit (3) through the injection unit (4), the source gas is adsorbed or deposited on the substrate (10), and a silicon-containing layer (21) is formed on the substrate (10) as shown in (a) of FIG. 2. That is, an atomic layer or single-layer thin film containing silicon is formed.

[0161] The step (S22) of injecting carbon-containing gas can be performed by injecting carbon-containing gas onto substrates (10) disposed in the outer region (33). To inject carbon-containing gas, carbon-containing gas is supplied to the first connecting hole (411) of the injection unit (4) using the gas storage unit (40a). Accordingly, the carbon-containing gas supplied to the first connecting hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support unit (3). At this time, the carbon-containing gas can be injected only toward the outer region (33).

[0162] As described above, while injecting a carbon-containing gas through the injection unit (4), a plasma-forming gas is injected to form the first plasma (hydrogen plasma). At this time, for example, a hydrogen-containing gas can be used as the plasma-forming gas. To this end, the hydrogen-containing gas is supplied to the second connection hole (421) of the injection unit (4) using the gas storage unit (40a). Accordingly, the hydrogen-containing gas supplied to the second connection hole (421) passes through the second injection hole (422) and then flows into the gap between the base electrode (43a) and the second electrode (44). That is, the hydrogen-containing gas flows into the gap between the upper surface of the base electrode (43a) and the second electrode (44) and into the hole (44a). In other words, the hydrogen-containing gas flows into and passes through the space between the first electrode (43) and the second electrode (44). Then, the first RF power is applied to the second electrode (44).

[0163] In applying the first RF power to the second electrode (44), the first RF power can be adjusted to 600 Watt to 1000 Watt based on a substrate having a diameter, width, or length of 300 mm. For a more specific example, the first RF power can be adjusted to 600 Watt to 800 Watt, or 700 Watt to 900 Watt, or 800 Watt to 1000 Watt. In another way, in adjusting the first RF power applied to the second electrode (44), 8.5 mmW / mm per unit area of ​​the substrate 2 14.1 mmW / mm 2 can be adjusted. As a more specific example, the first RF power applied per unit area of ​​the substrate is 8.5 mmW / mm 2 10.1 mmW / mm 2 or 9.9 mmW / mm 2 12.7 mmW / mm 2 Adjust to 10.1 mmW / mm 2 14.1 mmW / mm 2 can be adjusted.

[0164] When the first RF power is applied to the second electrode (44), the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged to form plasma. That is, the hydrogen-containing gas passing through the gap between the upper surface of the base electrode (43a) and the second electrode (44) and the hole (44a) can be discharged to form the first plasma.

[0165] The first plasma can be injected toward the substrate support (3) through the hole (44a). In addition, the carbon-containing gas injected toward the substrate support (3) through the first injection hole (412) can be activated by the first plasma. When the carbon-containing gas is injected toward the substrate support (3), carbon (C) can be deposited on the silicon-containing film (21). In addition, since the first plasma is formed while injecting the carbon-containing gas, the amount of carbon (C) deposited or bonded on the silicon-containing film (21) can be increased. That is, since the carbon (C)-containing gas is activated by the first plasma formed using the hydrogen-containing gas, the deposition or bonding of carbon (C) on the silicon-containing film (10) can be promoted. Therefore, a carbon-containing film (20) having a large amount of carbon (C) can be formed. In other words, an amorphous carbon-containing film having a large amount of carbon (C) can be formed. Additionally, by controlling the temperature of the substrate to 200°C to 1200°C and forming the first plasma (hydrogen plasma), silicon (Si) contained in the carbon-containing film (20) can be sublimated and removed.

[0166] The above describes forming the first plasma using a hydrogen-containing gas. However, in forming the first plasma, a gas other than the hydrogen-containing gas can be used. That is, the first plasma can be formed by injecting a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas while injecting a carbon-containing gas. In other words, the first plasma can be formed by injecting at least one of hydrogen-containing gas, argon gas, and helium gas, and a carbon-containing gas.

[0167] Next, a plasma forming gas is injected to form a second plasma (S23). At this time, for example, a hydrogen-containing gas is injected to form the second plasma. To this end, a hydrogen-containing gas is supplied to the second connection hole (421) of the injection unit (4) using the gas storage unit (40a). Accordingly, the hydrogen-containing gas supplied to the second connection hole (421) passes through the second injection hole (422) and then flows into the gap between the base electrode (43a) and the second electrode (44). That is, the hydrogen-containing gas flows into the gap between the upper surface of the base electrode (43a) and the second electrode (44) and into the hole (44a). While the hydrogen-containing gas passes through the space between the first electrode (43) and the second electrode (44), a second RF power is applied to the second electrode (44).

[0168] In applying the second RF power to the second electrode (44), the power can be adjusted from 50 Watt to 300 Watt based on a substrate having a diameter, width, or length of 300 mm. For more specific examples, the second RF power can be adjusted from 50 Watt to 100 Watt, or from 80 Watt to 200 Watt, or from 100 Watt to 300 Watt. In another way, in adjusting the second RF power applied to the second electrode (44), the power can be adjusted to 0.7 mmW / mm per unit area of ​​the substrate. 2 4.2 mmW / mm 2 can be adjusted. As a more specific example, the second RF power applied per unit area of ​​the substrate is 0.7 mmW / mm 2 1.4 mmW / mm 2 Adjust to 1.1 mmW / mm 2 2.8 mmW / mm 2 Adjust to 1.4 mmW / mm 2 4.2 mmW / mm 2 can be adjusted.

[0169] When a second RF power is applied to the second electrode (44), the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged, forming a second plasma (hydrogen plasma).

[0170] The above describes forming a second plasma (hydrogen plasma) by injecting a hydrogen-containing gas. However, in forming the second plasma, a gas other than the hydrogen-containing gas can be used. That is, while injecting a carbon-containing gas, a gas containing one or a combination of hydrogen-containing gas, argon gas, and helium gas can be injected to form the second plasma. In other words, the second plasma can be formed by injecting at least one of hydrogen-containing gas, argon gas, and helium gas, and a carbon-containing gas.

[0171] When the second plasma is formed, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film (20) can be densified. That is, by forming the second plasma by controlling the second RF power as described above, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film (20) can be densified. Accordingly, a densified carbon-containing film (20) with little or no impurity content is formed.

[0172]

[0173] In the above, when forming a first plasma by injecting a hydrogen-containing gas, it has been described that the carbon-containing gas and the hydrogen-containing gas are passed through different gas paths. However, this is not limited thereto, and the carbon-containing gas and the hydrogen-containing gas may be passed through the same path. For example, the carbon-containing gas and the hydrogen-containing gas may be passed through the second gas path (42) and injected toward the substrate support member (3). That is, the carbon-containing gas and the hydrogen-containing gas may be introduced into the second connecting hole (421), passed through the second injection hole (422) and the hole (44a), and injected toward the substrate support member (3).

[0174]

[0175] In the above, it has been described that a carbon-containing film (20) is formed using the second substrate processing device (1) according to the method of the first embodiment. However, this is not limited thereto, and a carbon-containing film can be formed using the second substrate processing device (1) according to the method of the second embodiment described in FIG. 4.

[0176]

[0177] FIG. 12 is a schematic diagram of a third substrate processing device capable of forming a carbon-containing film according to embodiments of the present invention. FIG. 13 is a diagram showing the arrangement structure of openings in the second substrate processing device illustrated in FIG. 12. FIG. 14 is a diagram showing how a supply port and an opening are formed in a gas injection device in the second substrate processing device illustrated in FIG. 12.

[0178] Referring to FIGS. 12 to 14, the third substrate processing device includes a chamber (10000), a substrate support device (20000) provided within the chamber (10000) to support a substrate (10) provided within the chamber (10000), a gas injection device (30000) installed within the chamber (10000) to inject gas to the substrate support device (20000), and a power supply device (40000) connected to the gas injection device (30000) to supply power to the gas injection device for generating plasma within the chamber (10000). In addition, the substrate processing device may further include a control device (not shown) for controlling the power supply device (40000).

[0179] The chamber (10000) provides a predetermined reaction space and maintains it airtight. The chamber (10000) may include a body (14000) having a predetermined reaction space, including a flat surface of approximately circular or rectangular shape and a side wall extending upward from the flat surface, and a lid (12000) positioned on the body (14000) in an approximately circular or rectangular shape to maintain the reaction space airtight. However, the chamber (10000) is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate (10).

[0180] An exhaust port (not shown) may be formed in a predetermined area on the lower surface of the chamber (10000), and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber (10000). In addition, the exhaust pipe may be connected to an exhaust device (not shown). A vacuum pump such as a turbo molecular pump may be used as the exhaust device. Therefore, the inside of the chamber (10000) may be vacuum-sucked to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less, by the exhaust device. The exhaust pipe may be installed not only on the lower surface of the chamber (10000), but also on the side of the chamber (10000) below the substrate support device (20000) described later. In addition, it goes without saying that a plurality of exhaust pipes and corresponding exhaust devices may be further installed in order to reduce the exhaust time.

[0181] Meanwhile, a substrate (10) provided into a chamber (10000) for a substrate processing process, for example, a thin film deposition process, can be mounted on a substrate support device (20000). The substrate support device (20000) can be equipped with, for example, an electrostatic chuck to hold the substrate (10) by electrostatic force so that the substrate (10) can be mounted and supported, or the substrate (10) can be supported by vacuum suction or mechanical force.

[0182] The substrate support device (20000) may be provided in a shape corresponding to the shape of the substrate (10), for example, a circle or a square. The substrate support device (20000) may include a substrate support (22000) on which the substrate (10) is mounted, and an elevator (24000) disposed below the substrate support (22000) to move the substrate support (22000) up and down. Here, the substrate support (22000) may be manufactured to be larger than the substrate (10), and the elevator (24000) is provided to support at least one area of ​​the substrate support (22000), for example, the center, and when the substrate (10) is mounted on the substrate support (22000), the substrate support (22000) may be moved closer to the gas injection device (30000). Additionally, a heater (not shown) may be installed inside the substrate support (22000). The heater generates heat at a predetermined temperature to heat the substrate support (22000) and the substrate (10) mounted on the substrate support (22000), thereby allowing a thin film to be uniformly deposited on the substrate (10).

[0183] A gas supply device may be installed in the lid (12000) of the chamber (10000). The gas supply device may be installed to penetrate the lid (12000) of the chamber (10000), and may include a first gas supply unit (11000) and a second gas supply unit (12000) to supply a first gas and a second gas to the gas injection device (30000), respectively. Here, the first gas may include a silicon-containing gas and a carbon-containing gas, and the second gas may include a plasma-forming gas and a purge gas. However, the present invention is not limited thereto, and the first gas may include a plasma-forming gas and a purge gas, and the second gas may include a silicon-containing gas and a carbon-containing gas. That is, the first gas providing unit (11000) and the second gas providing unit (12000) do not necessarily provide a single gas each, and the first gas providing unit (11000) and the second gas providing unit (12000) may be configured to supply a plurality of gases simultaneously or to supply a gas selected from among a plurality of gases. Here, the plasma forming gas may include one of a hydrogen-containing gas, an argon gas, and a helium gas, or a combination thereof.

[0184] A gas injection device (30000) is installed inside the chamber (10000), for example, on the lower surface of the lid (12000), and a first gas supply path for supplying a first gas by injecting it onto a substrate and a second gas supply path for supplying a second gas by injecting it onto the substrate are formed inside the gas injection device (30000). The first gas supply path and the second gas supply path are provided to be independent and separate from each other, so that the first gas and the second gas can be supplied onto the substrate separately without being mixed within the gas injection device (30000).

[0185] More specifically, the gas injection device (30000) includes a first plate (31000, 32000) having a first gas supply port (31200) capable of supplying a first gas and a second gas supply port (32200) capable of supplying a second gas, and a second plate (33000) electrically insulated from the first plate (31000, 32000), spaced apart from the first plate (31000, 32000), and having a plurality of openings (33200) arranged in an alternating manner with the first gas supply port (31200) and the second gas supply port (32200). Here, the first gas supply port (31200) is connected to a first gas supply path, and the second gas supply port (32200) is connected to a second gas supply path.

[0186] The first plate (31000, 32000) can operate as a first electrode for generating plasma in a reaction space by supplying power to the first plate (31000, 32000) or the second plate (33000) described later. As such, the first plate (31000, 32000) can be referred to as a first electrode.

[0187] The first plate (31000, 32000) may include an upper frame (31000) and a lower frame (32000). Here, the upper frame (31000) is detachably attached to the lower surface of the lid (12000) and a portion of the upper surface, for example, a central portion of the upper surface, is spaced apart from the lower surface of the lid (12000) by a predetermined distance. Accordingly, the first gas provided from the first gas provider (11000) can diffuse in the space between the upper surface of the upper frame (31000) and the lower surface of the lid (12000). In addition, the lower frame (32000) is installed at a predetermined distance from the lower surface of the upper frame (31000). Accordingly, the second gas provided from the second gas provider (12000) can diffuse in the space between the upper surface of the lower frame (32000) and the lower surface of the upper frame (31000). The upper frame (31000) and the lower frame (32000) can be formed integrally so that a separation space is provided inside by being connected along the outer circumference, and of course, can be formed with a structure in which the outer circumference is sealed by the first sealing member (35000). In this case, the first sealing member (35000) can be formed of an insulating material for electrically insulating the upper frame (31000) and the lower frame (32000) from each other, or conversely, can be formed of a conductive material for electrically connecting the upper frame (31000) and the lower frame (32000) to each other.

[0188] The first gas supply path may be formed so that the first gas provided from the first gas provider (11000) diffuses in the space between the lower surface of the lid (12000) and the upper frame (31000), penetrates the upper frame (31000) and the lower frame (32000), and is supplied into the chamber (10000). At this time, the first gas supply port (31200) may be formed to be connected to the first gas supply path, and may be formed to penetrate the upper frame (31000) and the lower frame (32000) so as to be isolated from the space between the upper surface of the upper frame (31000) and the lower surface of the lid (12000) at the lower portion of the space between the upper surface of the lower frame (32000) and the lower surface of the upper frame (31000).

[0189] In addition, the second gas supply path may be formed so that the second gas provided from the second gas provider (12000) diffuses in the space between the lower surface of the upper frame (31000) and the upper surface of the lower frame (32000) and is supplied into the chamber (10000) by penetrating the lower frame (32000). At this time, the second gas supply port (32200) may be formed by being connected to the second gas supply path, and may be formed by penetrating the lower frame (32000) at the lower portion of the space between the lower surfaces of the upper frame (31000).

[0190] Accordingly, the first gas supply path and the second gas supply path may not be connected to each other, and the first gas and the second gas may be separately supplied from the gas supply device through the first plate to the lower side of the first plate.

[0191] The second plate (33000) can function as a second electrode for generating plasma in the reaction space by supplying power to the first plate (31000, 32000) or the second plate (33000). As such, the second plate (33000) can be referred to as a second electrode.

[0192] The second plate (33000) is insulated from the first plate (31000, 32000) and can be installed spaced apart from the lower side of the first plate (31000, 32000). That is, the second plate (33000) is insulated from the lower frame (32000) and can be installed spaced apart from the lower side of the lower frame (32000). The second plate (33000) is installed spaced apart from the lower side of the lower frame (32000) by a predetermined distance (D1). Accordingly, the first gas and the second gas supplied downward through the first plate can diffuse in the space between the upper surface of the second plate (33000) and the lower side of the lower frame (32000). The above lower frame (32000) and the second plate (33000) may be configured to have an outer surface sealed by a second sealing member (36000). At this time, the second sealing member (36000) may be formed of an insulating material for electrically insulating the lower frames (32000) from each other.

[0193] Here, the second plate (33000) may be installed below the first plate at a distance such that a plasma sheath region that may be formed on the surface of the first plate, i.e., the lower surface of the lower frame (32000), and a plasma sheath region that may be formed on the surface of the second plate (33000), i.e., the upper surface of the second plate (33000) overlap each other. Here, the plasma sheath region refers to a dark field region where positive (+) ions are densely packed between the plasma and the surface of the structure, so that energy exchange occurs, but plasma is hardly formed.

[0194] If the plasma sheath region that can be formed on the lower surface of the lower frame (32000) and the plasma sheath region that can be formed on the upper surface of the second plate (33000) do not overlap, plasma can be formed between the plasma sheath regions, but in the embodiment of the present invention, the lower frame (32000) and the second plate (33000) are spaced apart from each other by a distance such that the plasma sheath region that can be formed on the lower surface of the lower frame (32000) and the plasma sheath region that can be formed on the upper surface of the second plate (33000) overlap each other, thereby preventing plasma from being generated between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000).

[0195] Meanwhile, as described above, the first gas and the second gas supplied downward through the first plate (31000, 32000) need to diffuse in the space between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000), so the lower surface of the lower frame (32000) and the upper surface of the second plate (33000) must be spaced apart at a distance that allows the gas to flow smoothly. Accordingly, the second plate (33000) may be spaced apart from the first plate by a distance of 3 mm or less, for example, 1 to 3 mm. If the second plate (33000) is spaced apart from the first plate by less than 1 mm, gas cannot flow smoothly in the space between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000), and if it is spaced apart by more than 3 mm, plasma is generated in the space between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000), causing particles, which leads to process defects.

[0196] In addition, the second plate (33000) has a plurality of openings (33200) that are arranged in an alternating manner with the first gas supply port (31200) and the second gas supply port (32200) described above. That is, as illustrated in FIG. 2, the second plate (33000) has a plurality of openings (33200) formed so that they do not overlap with any of the first gas supply port (31200) and the second gas supply port (32200) when the first plates (31000, 32000) and the second plate (33000) are viewed from above or below. The plurality of openings (33200) may be formed so as to be respectively positioned between the first gas supply port (31200) and the second gas supply port (32200) along at least one direction when the first plate (31000, 32000) and the second plate (33000) are viewed from above or below. In addition, the plurality of openings (33200) may be respectively positioned at a central position between the first gas supply port (31200) and the second gas supply port (32200) along at least one direction.

[0197] If the opening (33200) is arranged to overlap the first gas supply port (31200) and the second gas supply port (32200), most of the gas supplied from the first gas supply port (31200) and the second gas supply port (32200) will pass through the opening (33200) arranged to overlap the first gas supply port (31200) and the second gas supply port (32200) and be injected, respectively. However, not all of the gas may pass through the opening (33200) and be injected downward, and some of the gas may not be directly injected into the opening (33200), but may flow into the space between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000), and may stagnate in the space. Since stagnant gas like this impedes the smooth flow of gas and causes particle formation, in the present invention, a plurality of openings (33200) may be formed in the second plate (33000) so as to be arranged alternately with the first gas supply port (31200) and the second gas supply port (32200).

[0198] Such openings (33200) may include, as illustrated in FIG. 3, a first opening (33300) formed on the side of the first plate (31000, 32000) and a second opening (33500) connected to the first opening (33300) and having a larger diameter than the first opening (33300). That is, each opening (33200) may include a first opening (33300) formed with a predetermined length (H1) from the upper surface of the second plate (33000) facing the first plate (31000, 32000) and a second opening (33500) formed with a predetermined length (H2) from the lower surface of the second plate (33000). At this time, the first opening (33300) serves as a gas inlet, and the gas diffused in the space between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000) flows into the opening (33200) through the first opening (33300). On the other hand, the second opening (33500) serves as a gas outlet, and the gas flowing into the opening (33200) is injected to the lower side of the second plate (33000) through the second opening (33500). The first opening (33300) is arranged to be staggered with respect to the first gas supply opening (31200) and the second gas supply opening (32200), and the second opening (33500) may be formed to extend downwardly from the first opening (33300) so as to have a larger diameter than the first opening (33300). Meanwhile, the second opening (33500) may include a connecting portion (33500a) formed to have an increased diameter at the connection portion with the first opening (33300).

[0199] The first opening (33300) guides the gas diffused between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000) to the second opening (33500) on the lower side. The first opening (33300) has a diameter (D2) selected to uniformly guide the gas diffused between the lower surface of the lower frame (32000) and the upper surface of the second plate (33000) to each of the second openings (33500). At this time, the first opening (33300) may have a diameter (D2) that can form a plasma sheath region inside. That is, the first opening (33300) may form a plasma sheath region in which almost no plasma is formed inside by overlapping the plasma sheath region that can be formed on the inner surface of the second plate (33000) forming the first opening (33300). The first opening (33300) extends from the upper surface of the second plate (33000) and may be formed to be shorter than the length of the second opening (33500) described later.

[0200] The second opening (33500) is formed by being connected to the lower side of the first opening (33300). The second opening (33500) generates plasma within the interior of the second plate (33000), i.e., in a roughly cylindrical space. That is, the second opening (33500) provides a large surface area to promote plasma ionization of the gas flowing into the second opening (33500), thereby generating high-density plasma.

[0201] Meanwhile, the second opening (33500) may include a connecting portion (33500a) formed to have an increasing diameter at a connection portion with the first opening (33300). The connecting portion (33500a) serves to smoothly transfer gas supplied through the first opening (33300) from the upper side of the second opening (33500) to the second opening (33500). The connecting portion (33500a) may have a shape in which a cross-section gradually increases from one end connected to the first opening (33300) to the other end, whereby the gas supplied through the first opening (33300) can be guided through the connecting portion (33500a) without stagnation and smoothly transferred to the second opening (33500). However, the connecting portion (33500a) is not an essential component, and if the connecting portion (33500a) is omitted, a cylindrical second opening (33500) can be directly connected to the lower side of the first opening (33300).

[0202] In this way, the diameter (D3) of the second opening (33500) may be larger than the diameter (D2) of the first opening (33300). At this time, the diameter (D3) of the second opening (33500) may be 5 to 20 times the diameter (D2) of the first opening (33300). Here, the diameter (D3) of the second opening (33500) may mean the average diameter of the second openings (33500). When the diameter (D3) of the second opening (33500) is less than 5 times the diameter (D2) of the first opening (33300), a high-density plasma cannot be formed within the second opening (33500). In addition, if the diameter (D3) of the second opening (33500) exceeds 20 times the diameter (D2) of the first opening (33300), the gap between the second openings (33500) increases, making it impossible to deposit a uniform thin film. In order to form a high-density plasma within the second opening (33500) while simultaneously not unnecessarily increasing the gap between the second openings (33500), the diameter (D3) of the second opening (33500) may preferably be 8 to 10 times the diameter (D2) of the first opening (33300).

[0203] Meanwhile, the second opening (33500) may have a longer length (H2) than the first opening. For example, the length (H2) of the second opening (33500) may be 1.2 to 2 times the length (H1) of the first opening. By making the length (H2) of the second opening (33500) longer than the length (H1) of the first opening, it is possible to prevent the generation of plasma within the first opening (33200) and simultaneously generate high-density plasma within the second opening (33500), and also prevent the generation of parasitic plasma within the gap between the first plate (31000, 32000) and the second plate (33000). Here, if the length (H2) of the second opening (33500) is formed to be less than 1.2 times the length (H1) of the first opening, sufficient plasma density cannot be achieved. On the other hand, if the length (H2) of the second opening (33500) exceeds twice the length (H1) of the first opening, ions generated within the second opening (33500) may collide with the inner surface of the second plate (33000) forming the second opening (33500), resulting in hole destruction by sputtering. In addition, if the length (H2) of the second opening (33500) exceeds twice the length (H1) of the first opening, it becomes difficult to remove particles that may exist within the second opening (33500) during in-situ cleaning after substrate processing, and the thickness of the second plate (33000) unnecessarily increases. In order to achieve sufficient plasma density while preventing hole breakage, the length (H2) of the second opening (33500) may preferably be 1.3 to 1.5 times the length (H1) of the first opening (33300).

[0204] The power supply (40000) can be connected to the gas injection device (30000) to supply power to the gas injection device for generating plasma within the chamber (10000). That is, the power supply (40000) can supply RF power for generating plasma within the chamber (10000).

[0205] Here, the power supply (40000) is connected to the second plate (33000) to supply RF power only to the second plate (33000), and the first plate can be grounded. At this time, the first plate and the second plate (33000) can be insulated by a second sealing member (36000) formed of an insulating material. In this way, when the power supply (40000) supplies RF power to the second plate (33000) and the first plate is grounded, the first plate and the second plate (33000) each form electrodes for generating capacitively coupled plasma (CCP). In addition, the substrate support (22000) is also grounded, so that capacitively coupled plasma can be generated between the second plate (33000) and the support (22). Alternatively, the power supply (40000) may also supply power to the first plate and the second plate (33000), in which case the power supply (40000) may be configured to supply RF power to each of the first plate and the second plate (33000).

[0206]

[0207] Hereinafter, with reference to FIGS. 2, 12 to 14, a method of forming an amorphous carbon-containing film (20) using a third substrate processing device according to the first embodiment will be described.

[0208] First, the pressure inside the chamber (10000) is adjusted to a high vacuum pressure using a turbo molecular pump (TMP). For example, the pressure inside the chamber (10000) is adjusted to a pressure of 10 mTorr or more and 50 mTorr or less.

[0209] Then, the substrate (10) is loaded into the chamber (10000) and placed on the substrate support (22000). Then, the temperature of the substrate (10) is adjusted to 200°C to 1200°C. At this time, the temperature of the substrate (10) can be adjusted using a heater connected to at least one of the substrate support (22000) and the chamber (10000).

[0210] Thereafter, a silicon-containing gas, i.e., a source gas, is injected into the interior of the chamber (10000). To this end, the silicon-containing gas is supplied to the first gas supply port (31200) of the gas injection device (30000) using the first gas supply unit (11000). The silicon-containing gas introduced into the first gas supply port (31200) passes through the first opening (33300) and the second opening (33500) of the second plate (33000) and is then injected toward the substrate support (22000). Accordingly, the silicon-containing gas is adsorbed or deposited on the substrate (10), and a silicon-containing layer (21) is formed on the substrate (10) as shown in (a) of FIG. 2. That is, an atomic layer or a single-layer thin film containing silicon is formed.

[0211] Next, a first plasma is formed by injecting a plasma forming gas while injecting a carbon-containing gas into the interior of the chamber (10000). More specifically, the carbon-containing gas is supplied to the first gas supply port (31200) of the gas injection device (30000) using the first gas supply unit (11000). The carbon-containing gas introduced into the first gas supply port (31200) passes through the first opening (33300) and the second opening (33500) of the second plate (33000). In addition, the plasma forming gas is supplied to the second gas supply port (32200) of the gas injection device (30000) using the second gas supply unit (12000). The plasma forming gas introduced into the second gas supply port (32200) passes through the first opening (33300) and the second opening (33500) of the second plate (33000). Here, the plasma forming gas may be, for example, a hydrogen-containing gas.

[0212] Then, a first RF power is applied to the second plate (33000) using a power supply (40000). Accordingly, a first plasma can be formed in the second opening (33500) of the second plate (33000).

[0213] In applying the first RF power to the second plate (33000), the first RF power can be adjusted to 600 Watt to 1000 Watt based on a substrate having a diameter, width, or length of 300 mm. For a more specific example, the first RF power can be adjusted to 600 Watt to 800 Watt, or 700 Watt to 900 Watt, or 800 Watt to 1000 Watt. In another way, in adjusting the first RF power applied to the second plate (33000), the first RF power can be adjusted to 8.5 mmW / mm per unit area of ​​the substrate. 2 14.1 mmW / mm 2 can be adjusted. As a more specific example, the first RF power applied per unit area of ​​the substrate is 8.5 mmW / mm2 10.1 mmW / mm 2 or 9.9 mmW / mm 2 12.7 mmW / mm 2 Adjust to 10.1 mmW / mm 2 14.1 mmW / mm 2 can be adjusted.

[0214] By controlling the first RF power in this way to form the first plasma, the amount of carbon (C) deposited on the silicon-containing film (21) can be increased. In other words, an amorphous carbon-containing film (20) containing a large amount of carbon (C) can be formed.

[0215] When the step of forming the first plasma is completed, a second plasma is formed inside the chamber (10000). For example, while injecting a hydrogen-containing gas into the interior of the chamber (10000), a second RF power is applied to the second plate (33000) using a power supply unit (40000). More specifically, a plasma forming gas is supplied to the second gas supply port (32200) of the gas injection device (30000) using a second gas supply unit (12000). Accordingly, the plasma forming gas introduced into the second gas supply port (32200) passes through the first opening (33300) and the second opening (33500) of the second plate (33000). Then, a second RF power is applied to the second plate (33000) using the power supply unit (40000). Therefore, a second plasma, i.e., hydrogen plasma, can be formed.

[0216] In controlling the second RF power applied to the second plate (33000), the second RF power can be controlled from 50 Watt to 300 Watt based on a substrate having a diameter, width, or length of 300 mm. For more specific examples, the second RF power can be controlled from 50 Watt to 100 Watt, or from 80 Watt to 200 Watt, or from 100 Watt to 300 Watt. In another way, in controlling the second RF power applied to the second plate (33000), the second RF power can be controlled from 0.7 mmW / mm per unit area of ​​the substrate. 2 4.2 mmW / mm 2 can be adjusted. As a more specific example, the second RF power applied per unit area of ​​the substrate is 0.7 mmW / mm 2 1.4 mmW / mm 2 Adjust to 1.1 mmW / mm 2 2.8 mmW / mm 2 Adjust to 1.4 mmW / mm 2 4.2 mmW / mm 2 can be adjusted.

[0217] By forming the second plasma in this way, the amorphous carbon-containing film (20) can be exposed to hydrogen plasma (second plasma). When the carbon-containing film (20) is exposed to the second plasma, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film (20) can be densified. That is, by forming the second plasma by controlling the second RF power in the manner described above, impurities contained in the carbon-containing film (20) can be removed, and the carbon-containing film can be densified. Accordingly, a densified amorphous carbon-containing film (20) with little or no impurity content is formed.

[0218] The above describes forming the first and second plasmas (hydrogen plasma) by injecting a hydrogen-containing gas. However, in forming the first and second plasmas, a gas other than the hydrogen-containing gas may be used. That is, while injecting a carbon-containing gas, a gas including one or a combination of hydrogen-containing gas, argon gas, and helium gas may be injected to form the first and second plasmas. In other words, the first plasma may be formed by injecting at least one of hydrogen-containing gas, argon gas, and helium gas, and a carbon-containing gas.

[0219]

[0220]

[0221] According to embodiments of the present invention, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0222] In addition, an amorphous carbon-containing film with increased carbon content and reduced impurity content can be formed. In addition, an amorphous carbon-containing film with a dense film quality can be formed.

[0223] According to embodiments of the present invention, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0224] In addition, an amorphous carbon-containing film with increased carbon content and reduced impurity content can be formed. In addition, an amorphous carbon-containing film with a dense film quality can be formed.

Claims

1. A method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, A step of injecting a source gas containing silicon into the interior of the chamber; A step of forming a first plasma by supplying a first RF power to the chamber while injecting carbon and plasma forming gas into the interior of the chamber; A step of forming a second plasma by supplying a second RF power to the chamber while injecting a plasma forming gas into the interior of the chamber; A method for forming a carbon-containing film, wherein the step of forming the first and second plasmas includes a step of adjusting the first RF power to be greater than the second RF power.

2. In claim 1, A method for forming a carbon-containing film, comprising a step of controlling the temperature of a substrate to 200°C to 1200°C.

3. In claim 1, The step of forming the first plasma includes the step of adjusting the first RF power to 800 Watts to 1000 Watts, A method for forming a carbon-containing film, wherein the step of forming the second plasma comprises a step of adjusting the second RF power to 100 Watt to 300 Watt.

4. In claim 1, A method for forming a carbon-containing film, wherein the plasma forming gas injected in the first and second plasma forming steps comprises one or a combination of hydrogen-containing gas, argon gas, and helium gas.

5. In claim 1, The above first and second plasmas are a method for forming a carbon-containing film, which is a plasma formed inside the chamber.

6. In claim 1, In forming the first and second plasmas, A method for forming a carbon-containing film by utilizing the potential difference between the first electrode and the second electrode installed inside the chamber.

7. In claim 1, A method for forming a carbon-containing film in which the time for forming the first plasma is shorter than the time for forming the second plasma.

8. In claim 7, A method for forming a carbon-containing film, wherein the time for forming the first plasma is 2 seconds or more and 5 seconds or less, and the time for forming the second plasma is 5 seconds or more and 7 seconds or less.

9. In claim 1, Between the step of injecting the source gas and the step of forming the first plasma by supplying the first RF power to the chamber while injecting carbon and plasma forming gas into the interior of the chamber, a step of exhausting the chamber; and A method for forming a carbon-containing film, comprising: a step of exhausting the chamber while injecting purge gas into the interior of the chamber; 10. In claim 1, In injecting the above carbon and plasma forming gas, the plasma forming gas contains hydrogen, A method for forming a carbon-containing film by injecting a separately prepared carbon- and hydrogen-containing gas or a gas containing carbon and hydrogen together.

11. In any one of claims 1 to 10, A method for forming a carbon-containing film, comprising a step of forming a third plasma by injecting a plasma forming gas into the interior of the chamber between the step of injecting the source gas and the step of forming a first plasma by injecting the carbon and plasma forming gas.

12. A method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber comprising a first plate including a first gas supply port and a second gas supply port, a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of openings arranged in an alternating manner with the first gas supply port and the second gas supply port, and a turbo molecular pump (TMP), A step of injecting a source gas containing silicon into the interior of the chamber; A step of forming a first plasma by supplying a first RF power to the chamber while injecting carbon and plasma forming gas into the interior of the chamber; A step of forming a second plasma by supplying a second RF power to the chamber while injecting a plasma forming gas into the interior of the chamber; A method for forming a carbon-containing film, wherein the step of forming the first and second plasmas includes a step of adjusting the first RF power to be greater than the second RF power.

13. In claim 12, A method for forming a carbon-containing film, comprising a step of controlling the temperature of a substrate to 200°C to 1200°C.

14. In claim 12 The step of forming the first plasma includes the step of adjusting the first RF power to 800 Watts to 1000 Watts, A method for forming a carbon-containing film, wherein the step of forming the second plasma comprises a step of adjusting the second RF power to 100 Watt to 300 Watt.

15. In claim 12, A method for forming a carbon-containing film, wherein the plasma forming gas injected in the first and second plasma forming steps comprises one or a combination of hydrogen-containing gas, argon gas, and helium gas.

16. In claim 12, A method for forming a carbon-containing film, comprising a step of controlling the pressure inside the chamber to a pressure of 10 mTorr or more and 50 mTorr or less using the turbo molecular pump (TMP).

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