Display panel

Abstract

A display panel (100). Sub-pixels (1001) each comprise an aperture region (AR) and a light-shielding region (BM) at least partially surrounding the aperture region (AR); an array composite layer comprises a light-transmitting sub-portion (10011) located in the aperture region (AR); the array composite layer comprises at least one through hole (31); the through hole (31) is at least partially located in the aperture region (AR); the light-transmitting sub-portion (10011) is adjacent to the through hole (31); a light-transmitting sub-portion filling layer (30) is at least arranged in the through hole (31); and the difference between the reflectivity of the through hole portion and the reflectivity of the light-transmitting sub-portion (10011) is less than or equal to 0.5%.

Description

A display panel Technical Field

[0001] The present application relates to the field of display, and in particular to a display panel. Background Art

[0002] Various types of display panels are widely used in mobile phones, computers, and displays for AR (Augmented Reality) and VR (Virtual Reality). Existing three-dimensional displays primarily sacrifice resolution to achieve different viewing angles for the left and right eyes, requiring increasingly higher resolutions. VR (Virtual Reality) displays require very high resolutions, and to increase the aperture ratio, full utilization of through-holes is essential.

[0003] However, there are differences in optical aspects such as reflectivity between the through-hole portion of the opening area and the non-through-hole portion of the opening area, which reduces the image quality of the display panel. SUMMARY OF THE INVENTION

[0004] The embodiments of the present application provide a display panel that can solve the problem of differences in optical aspects such as reflectivity between the through-hole portion of the opening area and the non-through-hole portion of the opening area, which reduces the image quality of the display panel.

[0005] An embodiment of the present application provides a display panel, comprising a plurality of sub-pixels, each sub-pixel including an opening area and a light shielding area at least partially surrounding the opening area. The display panel includes:

[0006] base,

[0007] an array composite layer disposed on the substrate, the array composite layer including a light-transmitting sub-portion located in the opening region, the array composite layer including at least one through-hole, the through-hole being at least partially located in the opening region, the light-transmitting sub-portion being adjacent to the through-hole;

[0008] The light-transmitting sub-portion filling layer is at least arranged in the through hole, and the difference between the reflectivity of the through hole portion and the reflectivity of the light-transmitting sub-portion is less than or equal to 0.5%.

[0009] Optionally, in some embodiments of the present application, the light-transmitting sub-portion filling layer includes a first organic layer, and the first organic layer is arranged in the through hole and the light-transmitting sub-portion.

[0010] Optionally, in some embodiments of the present application, the light-transmitting sub-region filling layer includes a first inorganic layer, and the first inorganic layer is only filled in the through hole.

[0011] Optionally, in some embodiments of the present application, the array composite layer includes:

[0012] A first semiconductor layer is disposed on the substrate;

[0013] a first gate insulating layer, disposed on the first semiconductor layer and a portion of the substrate;

[0014] a first gate, disposed on the first gate insulating layer;

[0015] a first interlayer insulating layer, disposed on the first gate and a portion of the first gate insulating layer;

[0016] A first source metal layer is provided on the first interlayer insulating layer, wherein the first source metal layer includes a first source;

[0017] a second interlayer insulating layer, disposed on the first source metal layer and a portion of the first interlayer insulating layer;

[0018] a first drain metal layer, disposed on the second interlayer insulating layer, the first drain metal layer comprising a first drain electrode, and the first drain electrode is conductively connected to the first semiconductor layer;

[0019] a planarization layer, disposed on the first drain metal layer;

[0020] The through hole penetrates the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer, the first drain metal layer is a transparent conductive layer, and the first drain extends into the through hole to connect with the first semiconductor layer.

[0021] Optionally, in some embodiments of the present application, in the thickness direction of the display panel, the light-transmitting portion includes the first gate insulating layer, the first interlayer insulating layer, and the second interlayer insulating layer more than the through-hole portion;

[0022] In the thickness direction of the display panel, the through hole portion includes the first semiconductor layer and the first drain electrode in addition to the light-transmitting portion.

[0023] Optionally, in some embodiments of the present application, the light-transmitting sub-region filling layer includes a first organic layer, the light-transmitting sub-region filling layer is the flat layer, and the material of the first organic layer is at least one of polyimide, polymethyl methacrylate and polyethylene terephthalate.

[0024] Optionally, in some embodiments of the present application, the light-transmitting sub-portion filling layer includes a first inorganic layer, the first inorganic layer is only filled in the through hole, and the material of the first inorganic layer includes at least one of silicon nitride, silicon oxide and niobium pentoxide.

[0025] Optionally, in some embodiments of the present application, the material of the light-transmitting portion filling layer includes a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride is 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide is 3000 angstroms to 3500 angstroms.

[0026] Optionally, in some embodiments of the present application, the refractive index of the silicon nitride is 1.85 to 1.95, and the refractive index of the silicon oxide is 1.4 to 1.5.

[0027] Optionally, in some embodiments of the present application, the array composite layer further comprises:

[0028] a second semiconductor layer, disposed between the substrate and the first semiconductor layer, wherein the material of the first semiconductor layer is different from that of the second semiconductor layer;

[0029] a second gate insulating layer, disposed between the second semiconductor layer and the first semiconductor layer;

[0030] a second gate disposed between the second gate insulating layer and the first semiconductor layer;

[0031] A third interlayer insulating layer is provided between the second gate and the first semiconductor layer Beneficial effects

[0032] In an embodiment of the present application, a display panel is provided, comprising a plurality of sub-pixels, each sub-pixel comprising an opening region and a light-shielding region at least partially surrounding the opening region. The display panel comprises: a substrate, an array composite layer disposed on the substrate, the array composite layer comprising a light-transmitting sub-portion located in the opening region, the array composite layer comprising at least one through-hole, the through-hole being at least partially located in the opening region, the light-transmitting sub-portion being adjacent to the through-hole; a light-transmitting sub-portion filling layer disposed at least within the through-hole, the difference between the reflectivity of the through-hole portion and the reflectivity of the light-transmitting sub-portion being less than or equal to 0.5%. In the present application, the through-hole is at least partially located in the opening region to increase the aperture ratio and transmittance of the display panel. The display panel comprises a light-transmitting sub-portion filling layer, the light-transmitting sub-portion filling layer being disposed at least within the through-hole, such that the difference between the reflectivity of the through-hole portion and the reflectivity of the light-transmitting sub-portion is less than or equal to 0.5%, thereby reducing optical differences in reflectivity, such as reflectivity, between the through-hole portion of the opening region and the non-through-hole portion of the opening region, thereby improving the image quality of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0034] FIG1 is a schematic top view of a partial structure of a sub-pixel of a display panel provided by an embodiment of the present application;

[0035] FIG2 is a first cross-sectional schematic diagram of a display panel provided in an embodiment of the present application;

[0036] FIG3 is a second cross-sectional schematic diagram of a display panel provided in an embodiment of the present application;

[0037] FIG4 is a third cross-sectional schematic diagram of the display panel provided in an embodiment of the present application. Modes for Carrying Out the Invention

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0039] The embodiment of the present application provides a display panel, which includes a plurality of sub-pixels, each of which includes an opening area and a light-shielding area at least partially surrounding the opening area. The display panel includes: a substrate, an array composite layer, which is arranged on the substrate, the array composite layer including a light-transmitting sub-portion located in the opening area, the array composite layer including at least one through hole, the through hole at least partially located in the opening area, the light-transmitting sub-portion being adjacent to the through hole; a light-transmitting sub-portion filling layer, which is at least arranged in the through hole, and the difference between the reflectivity of the through hole portion and the reflectivity of the light-transmitting sub-portion is less than or equal to 0.5%. Detailed descriptions are given below. It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments.

[0040] Example 1

[0041] Please refer to Figures 1, 2, 3 and 4. Figure 1 is a top view schematic diagram of the partial structure of the sub-pixel of the display panel provided in an embodiment of the present application; Figure 2 is a first cross-sectional schematic diagram of the display panel provided in an embodiment of the present application; Figure 3 is a second cross-sectional schematic diagram of the display panel provided in an embodiment of the present application; and Figure 4 is a third cross-sectional schematic diagram of the display panel provided in an embodiment of the present application.

[0042] An embodiment of the present application provides a display panel 100, which includes a plurality of sub-pixels 1001. The sub-pixels 1001 include an opening area AR and a light-shielding area BM that at least partially surrounds the opening area AR. The display panel 100 includes a substrate 11, an array composite layer, and a light-transmitting sub-portion filling layer 30. The array composite layer is disposed on the substrate 11, the array composite layer includes a light-transmitting sub-portion 10011 located in the opening area AR, the array composite layer includes at least one through hole 31, the through hole 31 is at least partially located in the opening area AR, and the light-transmitting sub-portion 10011 is adjacent to the through hole 31. The light-transmitting sub-portion filling layer 30 is at least disposed in the through hole 31, and the difference in reflectivity between the through hole 31 and the light-transmitting sub-portion 10011 is less than or equal to 0.5%.

[0043] Specifically, the substrate 11 may be a glass substrate, which is not limited here.

[0044] Specifically, the display panel 100 includes a plurality of sub-pixels 1001. The display panel 100 may be a liquid crystal display panel. The plurality of sub-pixels 1001 are arrayed on a substrate 11. FIG1 illustrates that the scanning signal line San1 and the data signal line Data1 surround a plurality of sub-pixels 1001. The sub-pixels 1001 include an opening area AR and a shading area BM that at least partially surrounds the opening area AR. The opening area AR may allow light from the backlight to pass through to display an image. The shading area BM may be a black matrix (BM) setting area. The shading area BM may divide the plurality of sub-pixels 1001.

[0045] Specifically, the array composite layer is arranged on the substrate 11, and the array composite layer may include multiple thin film transistors, scanning signal lines San1 and data signal lines Data1 and other structures. It is easy to understand that in the liquid crystal display panel, the array composite layer is a plurality of film layers between the liquid crystal layer on the TFT array substrate and the substrate 11.

[0046] Specifically, the array composite layer includes at least one through hole 31 , which is at least partially located in the opening area AR. The through hole 31 is arranged at least partially in the opening area AR to fully utilize the position of the through hole 31 to increase the aperture ratio, thereby increasing the transmittance.

[0047] Specifically, the light-transmitting sub-portion filling layer 30 is at least disposed in the through hole 31 , and is used to eliminate the difference in optical aspects such as reflectivity between the through hole 31 portion of the opening area AR and the non-through hole portion of the opening area AR.

[0048] In this embodiment, the through hole 31 is at least partially located in the opening area AR to improve the aperture ratio of the display panel 100 and improve the transmittance. The display panel 100 includes a transparent sub-portion filling layer 30, and the transparent sub-portion filling layer 30 is at least arranged in the through hole 31, so that the difference in reflectivity between the through hole 31 portion and the reflectivity of the transparent sub-portion 10011 is less than or equal to 0.5%, thereby reducing the optical differences in reflectivity such as the reflectivity between the through hole 31 portion of the opening area AR and the non-through hole portion of the opening area AR, thereby improving the image quality of the display panel 100.

[0049] In some embodiments, as shown in FIG. 2 , the light-transmitting sub-region filling layer 30 includes a first organic layer, and the first organic layer is disposed in the through hole 31 and the light-transmitting sub-region 10011 .

[0050] Specifically, the light-transmitting sub-portion filling layer 30 includes a first organic layer, which is an organic material and is formed by coating or the like. The first organic layer can be coated in the through hole 31 and the light-transmitting sub-portion 10011. The first organic layer flattens the through hole 31. The thickness of the first organic layer in the through hole 31 is greater than the thickness of the light-transmitting sub-portion 10011, so that the difference in reflectivity between the through hole 31 and the light-transmitting sub-portion 10011 can be less than or equal to 0.5%.

[0051] In some embodiments, as shown in FIG. 3 and FIG. 4 , the light-transmitting sub-site filling layer 30 includes a first inorganic layer, and the first inorganic layer is only filled in the through hole 31 .

[0052] Specifically, the light-transmitting sub-part filling layer 30 includes a first inorganic layer, which is an inorganic material and is formed by methods such as vapor deposition. The thickness of each part is relatively uniform. The first inorganic layer is set to only fill the through hole 31, so that the difference in reflectivity between the through hole 31 and the light-transmitting sub-part 10011 can be less than or equal to 0.5%.

[0053] Example 2

[0054] The display panel 100 of this embodiment is the same as or similar to any one of the first embodiments, except that this embodiment further describes a detailed structure of the display panel 100 .

[0055] In some embodiments, the array composite layer includes a first semiconductor layer 16, a first gate insulating layer 17, a first gate 181, a first interlayer insulating layer 19, a first source metal layer 20, a second interlayer insulating layer 21, a first drain metal layer 22, and a flat layer 23; the first semiconductor layer 16 is disposed on the substrate 11; the first gate insulating layer 17 is disposed on the first semiconductor layer 16 and a portion of the substrate 11; the first gate 181 is disposed on the first gate insulating layer 17; the first interlayer insulating layer 19 is disposed on the first gate 181 and a portion of the first gate insulating layer 17; the first source metal layer 20 is disposed on the first interlayer insulating layer 19, and the first source The gate metal layer 20 includes a first source electrode 201; the second interlayer insulating layer 21 is arranged on the first source metal layer 20 and a portion of the first interlayer insulating layer 19; the first drain metal layer 22 is arranged on the second interlayer insulating layer 21, and the first drain metal layer 22 includes a first drain electrode 221, and the first drain electrode 221 is conductively connected to the first semiconductor layer 16; the flat layer 23 is arranged on the first drain metal layer 22; wherein, the through hole 31 passes through the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21, the first drain metal layer 22 is a transparent conductive layer, and the first drain electrode 221 extends into the through hole 31 to connect to the first semiconductor layer 16.

[0056] Specifically, FIG2 and FIG3 illustrate a cross-sectional structure of a display panel, and FIG2 and FIG3 respectively illustrate different configurations of the light-transmitting sub-portion filling layer 30 .

[0057] Specifically, in Figures 2 and 3, the function of the through hole 31 is to allow the first drain electrode 221 to extend into the through hole 31 to connect to the first semiconductor layer 16. The through hole 31 penetrates the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21. The through hole 31 penetrates a large number of film layers or the thickness of the film layer penetrated is large, so that the through hole 31 is larger. In the sub-pixel 1001, the through hole 31 occupies a larger area. Therefore, it is necessary to set the through hole 31 at least partially in the opening area AR to improve the aperture ratio of the sub-pixel 1001.

[0058] Specifically, in order to allow the through hole 31 to transmit the backlight, the first drain metal layer 22 is a transparent conductive layer.

[0059] In some embodiments, in the thickness direction of the display panel 100, the light-transmitting sub-portion 10011 has the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21 compared to the through-hole portion 31, that is, the through-hole 31 portion lacks the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21 compared to the light-transmitting sub-portion 10011; in the thickness direction of the display panel 100, the through-hole 31 portion has the first semiconductor layer 16 and the first drain 221 compared to the light-transmitting sub-portion 10011.

[0060] Specifically, as shown in Figures 2 and 3, due to the structural setting of the display panel, in the thickness direction of the display panel 100, the through hole 31 portion lacks the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21 compared to the transparent sub-portion 10011; in the thickness direction of the display panel 100, the through hole 31 portion has the first semiconductor layer 16 and the first drain 221 compared to the transparent sub-portion 10011.

[0061] Specifically, the materials of the first gate insulating layer 17 , the first interlayer insulating layer 19 , and the second interlayer insulating layer 21 can be one or both of silicon nitride and silicon oxide.

[0062] Specifically, the material of the first drain metal layer 22 may be indium tin oxide (ITO).

[0063] In some embodiments, as shown in FIG2 , the light-transmitting sub-site filling layer 30 includes a first organic layer, which is a flat layer. The material of the first organic layer is at least one of polyimide, polymethyl methacrylate, and polyethylene terephthalate.

[0064] Specifically, the light-transmitting sub-site filling layer 30 includes a first organic layer, which is an organic material. The light-transmitting sub-site filling layer 30 is a flat layer, and the light-transmitting sub-site filling layer 30 is shared with the flat layer 23 , which can reduce the manufacturing process of the display panel.

[0065] In some embodiments, as shown in FIG3 and FIG4 , the light-transmitting sub-portion filling layer 30 includes a first inorganic layer, which is only filled in the through hole 31 , and the material of the first inorganic layer includes at least one of silicon nitride, silicon oxide, and niobium pentoxide.

[0066] In some embodiments, the material of the light-transmitting sub-site filling layer 30 includes a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride is 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide is 3000 angstroms to 3500 angstroms.

[0067] Specifically, as shown in Figure 4, Figure 4 shows that the light-transmitting sub-part filling layer 30 is a stacked structure, and the material of the light-transmitting sub-part filling layer 30 includes a stack of silicon nitride and silicon oxide. For example, the light-transmitting sub-part filling layer 30 is a stack of silicon nitride and silicon oxide. For example, the light-transmitting sub-part filling layer 30 is a stack of silicon nitride, silicon oxide, and silicon nitride. For example, the light-transmitting sub-part filling layer 30 is a stack of silicon nitride, silicon oxide, silicon nitride, and silicon oxide. The multi-layer reduction of reflectivity differences here is achieved by adjusting the refractive index of the entire film layer. Enhancement and destructive effects are achieved by adjusting the material thickness through two media with different refractive indices (for example, silicon nitride and silicon oxide), adjusting the optical path, and thus achieving attenuation or enhancement of the transmitted light. For example, 100~1000 angstroms of silicon nitride and 100~1000 angstroms of silicon oxide are used as a unit to block light in the 380nm-780nm band. Then, 100~1000 angstroms of silicon nitride and 100~1000 angstroms of silicon oxide are deposited as another unit to block light in the 380nm-780nm band.

[0068] In some embodiments, the refractive index of silicon nitride is 1.85 to 1.95, and the refractive index of silicon oxide is 1.4 to 1.5.

[0069] In some embodiments, the array composite layer further includes a second semiconductor layer, a second gate insulating layer, a second gate, and a third interlayer insulating layer; the second semiconductor layer 12 is arranged between the substrate 11 and the first semiconductor layer 16, and the material of the first semiconductor layer 16 is different from the material of the second semiconductor layer 12; the second gate insulating layer 13 is arranged between the second semiconductor layer 12 and the first semiconductor layer 16; the second gate 142 is arranged between the second gate insulating layer 13 and the first semiconductor layer 16; and the third interlayer insulating layer 15 is arranged between the second gate 142 and the first semiconductor layer 16.

[0070] Specifically, when the display panel 100 is used for a display screen for VR (Virtual Reality), an LTPO architecture can be used; the first thin film transistor 101 in Figures 2 and 3 can be a thin film transistor of an oxide semiconductor, that is, the first semiconductor layer 16 can be an oxide semiconductor material such as IGZO; the second thin film transistor 102 in Figures 2 and 3 can be a thin film transistor of polycrystalline silicon, that is, the second semiconductor layer 12 can be a polycrystalline silicon material.

[0071] Specifically, Figures 2 and 3 illustrate the layer structure of the display panel 100, which includes the following stacked layers: a substrate, a second semiconductor layer 12, a second gate insulating layer 13, a second gate metal layer 14, a third interlayer insulating layer 15, a first semiconductor layer 16, a first gate insulating layer 17, a first gate metal layer 18, a first interlayer insulating layer 19, a first source metal layer 20, a second interlayer insulating layer 21, a first drain metal layer 22, a planarization layer 23, a first transparent electrode layer 24, an inter-transparent electrode insulating layer 25, and a second transparent electrode 26. The second gate metal layer 14 is patterned to form a second gate 142 and a third gate 141; the first gate metal layer 18 is patterned to form a first gate 181, a second source electrode 182, and a second drain electrode 183; the first source metal layer 20 is patterned to form a first source electrode 201; and one of the first transparent electrode layer 24 and the second transparent electrode 26 forms a common electrode, while the other forms a pixel electrode.

[0072] It should be noted that the hydrogen content in the material of the light-transmitting portion filling layer 30 needs to be relatively low to prevent the light-transmitting portion filling layer 30 from affecting the electrical properties of the first semiconductor layer 16 .

[0073] It should be noted that the present application reduces the difference in reflectivity between the through hole 31 and the light-transmitting sub-portion 10011 from greater than or equal to 3% to less than or equal to 0.5%.

[0074] The above is a detailed introduction to a display panel provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, wherein: The display panel comprises a plurality of sub-pixels, each of which comprises an opening area and a light shielding area at least partially surrounding the opening area. The display panel comprises: Base, An array composite layer is disposed on the substrate, the array composite layer includes a light-transmitting sub-portion located in the opening area, the array composite layer includes at least one through hole, the through hole is at least partially located in the opening area, and the light-transmitting sub-portion is adjacent to the through hole; The light-transmitting sub-portion filling layer is at least arranged in the through hole, and the difference between the reflectivity of the through hole portion and the reflectivity of the light-transmitting sub-portion is less than or equal to 0.5%.

2. The display panel according to claim 1, wherein: The light-transmitting sub-portion filling layer includes a first organic layer, and the first organic layer is arranged in the through hole and the light-transmitting sub-portion.

3. The display panel according to claim 1, wherein: The light-transmitting sub-site filling layer includes a first inorganic layer, and the first inorganic layer is only filled in the through hole.

4. The display panel according to claim 1, wherein: The array composite layer comprises: A first semiconductor layer is disposed on the substrate; A first gate insulating layer, disposed on the first semiconductor layer and a portion of the substrate; A first gate, disposed on the first gate insulating layer; A first interlayer insulating layer, disposed on the first gate and a portion of the first gate insulating layer; A first source metal layer, disposed on the first interlayer insulating layer, wherein the first source metal layer includes a first source; A second interlayer insulating layer, disposed on the first source metal layer and a portion of the first interlayer insulating layer; A first drain metal layer is disposed on the second interlayer insulating layer, the first drain metal layer comprises a first drain electrode, and the first drain electrode is conductively connected to the first semiconductor layer; A planar layer, disposed on the first drain metal layer; The through hole penetrates the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer, the first drain metal layer is a transparent conductive layer, and the first drain extends into the through hole to connect with the first semiconductor layer.

5. The display panel according to claim 4, wherein: In the thickness direction of the display panel, the light-transmitting portion has the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer more than the through-hole portion; In the thickness direction of the display panel, the through hole portion includes the first semiconductor layer and the first drain electrode in comparison with the light-transmitting portion.

6. The display panel according to claim 5, wherein: The light-transmitting sub-site filling layer includes a first organic layer, the light-transmitting sub-site filling layer is the flat layer, and the material of the first organic layer is at least one of polyimide, polymethyl methacrylate and polyethylene terephthalate.

7. The display panel according to claim 5, wherein: The light-transmitting sub-site filling layer includes a first inorganic layer, the first inorganic layer is only filled in the through hole, and the material of the first inorganic layer includes at least one of silicon nitride, silicon oxide and niobium pentoxide.

8. The display panel according to claim 7, wherein: The material of the light-transmitting portion filling layer includes a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride is 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide is 3000 angstroms to 3500 angstroms.

9. The display panel according to claim 8, wherein: The refractive index of the silicon nitride is 1.85 to 1.95, and the refractive index of the silicon oxide is 1.4 to 1.

5.

10. The display panel according to claim 4, wherein: The array composite layer also includes: A second semiconductor layer is disposed between the substrate and the first semiconductor layer, wherein a material of the first semiconductor layer is different from a material of the second semiconductor layer; A second gate insulating layer, disposed between the second semiconductor layer and the first semiconductor layer; A second gate is disposed between the second gate insulating layer and the first semiconductor layer; The third interlayer insulating layer is disposed between the second gate and the first semiconductor layer.

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