Gas distribution device and semiconductor processing apparatus

Abstract

Provided in the present application are a gas distribution device and a semiconductor processing apparatus. The semiconductor processing apparatus comprises a reaction cavity having a cover plate arranged at the top, the cover plate being provided with a gas inlet that is in communication with the interior of the reaction cavity. The gas distribution device is arranged below the cover plate, and comprises a gas distribution plate and at least one diffusion plate, wherein the gas distribution plate is located below the gas inlet, a gas uniformizing cavity is formed between the gas distribution plate and the cover plate, and the gas distribution plate is provided with a plurality of gas distribution holes penetrating the gas distribution plate in the thickness direction; the at least one diffusion plate is arranged in the gas uniformizing cavity and divides the gas uniformizing cavity into at least two gas uniformizing sub-cavities distributed at intervals in a vertical direction; each diffusion plate of the at least one diffusion plate is provided with a plurality of diffusion holes penetrating the diffusion plate in the thickness direction; the gas uniformizing sub-cavity adjacent to the cover plate is in communication with the gas inlet; any two adjacent gas uniformizing sub-cavities are in communication by means of the diffusion holes; and the gas uniformizing sub-cavity adjacent to the gas distribution plate is in communication with the interior of the reaction cavity by means of the gas distribution holes.

Description

Gas distribution device and semiconductor processing equipment Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a gas distribution device and semiconductor processing equipment. Background Art

[0002] Atomic layer deposition (ALD) equipment is widely used in today's semiconductor chip manufacturing processes. The airflow-related systems of ALD equipment primarily include the air intake, mixing, distribution, and exhaust systems. During the process, this system primarily uses pulsed airflow, depositing single-atom films layer by layer onto the wafer surface on a pedestal. Exhaust gas is then exhausted through an exhaust port.

[0003] As shown in Figure 1, the ALD apparatus includes a reaction chamber 010, with a gas distribution system 101 disposed at the top of the reaction chamber 010. A susceptor 018 is also disposed within the reaction chamber 010 for supporting a wafer 017. A gas extraction port 019 is disposed at the bottom of the reaction chamber 010. Furthermore, the ALD apparatus also includes a gas mixing system 102, a first gas mixing line 011, a second gas mixing line 012, a first source gas line 013, a second source gas line 014, a first dilution gas line 015, and a second dilution gas line 016. The first source gas pipeline 013 and the first dilution gas pipeline 015 are both connected to the first air inlet of the gas mixing system 102 via the first gas mixing pipeline 011. The second source gas pipeline 014 and the second dilution gas pipeline 016 are both connected to the second air inlet of the gas mixing system 102 via the second gas mixing pipeline 012. The gas outlet of the gas mixing system 102 is connected to the gas inlet of the gas distribution system 101. Furthermore, a first on-off valve 131 and a second on-off valve 141 are provided on the first source gas pipeline 013 and the second source gas pipeline 014, respectively.

[0004] Generally speaking, the typical gas flow of an ALD process requiring two source gases is shown in Table 1 below.

[0005] Table 1

[0006] S1. In the preparation stage, the first dilution gas and the second dilution gas, respectively delivered by the first dilution gas pipeline 015 and the second dilution gas pipeline 016, enter the gas mixing system 102 through the first and second gas inlets, respectively, and are mixed. After being dispersed by the gas distribution system 101, they are evenly introduced into the reaction chamber. The first and second dilution gases, such as N2, are used to purge the chamber and pipelines.

[0007] S2. Open the first on-off valve 013, and keep the first dilution gas pipeline 015 and the second dilution gas pipeline 016 open. This allows the first source gas delivered by the first source gas pipeline 013 to flow into the first gas mixing pipeline 011, mix with the first dilution gas, enter the gas mixing system 102 through the first gas inlet, and then mix with the second dilution gas. After being dispersed by the gas distribution system 101, it is evenly introduced into the reaction chamber.

[0008] S3. Close the first on-off valve 131 to stop the introduction of the first source gas, and the first dilution gas pipeline 015 and the second dilution gas pipeline 016 remain normally open for purging the chamber and pipelines;

[0009] S4. Open the second on-off valve 141, and keep the first dilution gas pipeline 015 and the second dilution gas pipeline 016 open. This allows the second source gas delivered by the second source gas pipeline 014 to flow into the second gas mixing pipeline 012, mix with the second dilution gas, enter the gas mixing system 102 through the second gas inlet, and then mix with the first dilution gas. After being dispersed by the gas distribution system 101, it is evenly introduced into the reaction chamber.

[0010] S5. Close the second on-off valve 141 to stop the second source gas, and keep the first dilution gas pipeline 015 and the second dilution gas pipeline 016 normally open, and increase the flow rate of the first dilution gas and the second dilution gas, and perform a large flow purge at the end of a cycle;

[0011] S6. Repeat steps S2 to S5 for a preset number of cycles.

[0012] The air intake time of each step S2 and step S4 is very short, usually between a few milliseconds and a few hundred milliseconds, and the purge time of each step S3 and step S5 is between a few hundred milliseconds and a few seconds. Usually, a process requires dozens or even hundreds of cycles.

[0013] Various source gases and dilution gases (including carrier gases and shielding gases) are thoroughly mixed through the gas mixing structure to achieve a very uniform concentration. This gas is then rapidly dispersed through the gas distribution system and blown onto the wafer surface through a porous gas nozzle, where a chemical reaction occurs to form a thin film. The concentration of the mixed gas and the uniformity of the gas distribution are directly related to parameters such as film thickness uniformity. Therefore, rapid gas mixing and distribution are crucial to shortening cycle time and improving performance and production capacity.

[0014] Summary of the Invention

[0015] The first purpose of the present application is to provide a gas distribution device to solve the technical problem of uneven gas flow in the existing atomic layer deposition process.

[0016] The gas distribution device provided in the present application is applied to semiconductor processing equipment, wherein the semiconductor processing equipment includes a reaction chamber, a cover plate is provided on the top of the reaction chamber, and the cover plate has a gas inlet communicating with the reaction chamber; the gas distribution device is characterized in that it is used to be arranged below the cover plate, and the gas distribution device includes: a gas distribution plate and at least one diffusion plate;

[0017] The gas distribution plate is located below the air inlet, and a uniform air cavity is formed between the gas distribution plate and the cover plate, and the gas distribution plate has a plurality of gas distribution holes that penetrate the thickness of the gas distribution plate;

[0018] The at least one diffuser plate is arranged in the uniform air chamber, and divides the uniform air chamber into at least two sub-uniform air chambers spaced apart along the vertical direction; each of the at least one diffuser plate has a plurality of diffusion holes that penetrate the thickness of the diffuser plate; wherein the sub-uniform air chamber adjacent to the cover plate is connected to the air inlet; any two adjacent sub-uniform air chambers are connected through the diffusion holes; the sub-uniform air chamber adjacent to the gas distributor plate is connected to the interior of the reaction chamber through the gas distributor hole.

[0019] The beneficial effects brought about by the gas distribution device of this application are:

[0020] By providing at least one diffuser plate, airflow in each sub-uniform cavity, after encountering the solid portion of the diffuser plate, flows along the upper surface of the diffuser plate, thereby passing through the diffuser holes. Because the distribution area of ​​the diffuser holes on the diffuser plate is larger than the corresponding area of ​​the air inlet on the diffuser plate, the degree of dispersion of airflow from the diffuser plate to the next sub-uniform cavity after passing through the diffuser plate is greater than that of the previous sub-uniform cavity. This improves the uniformity of airflow in different areas and reduces the concentration of airflow in the central area of ​​the diffuser plate, which helps to improve process uniformity.

[0021] In some technical solutions, the diffuser plate has a central area and an edge area surrounding the central area; the central area and the edge area are both provided with a plurality of the diffuser holes;

[0022] The diffusion holes located in the edge area are edge holes, and the edge holes gradually move away from the central axis of the diffusion plate from the air inlet end to the air outlet end.

[0023] In some technical solutions, the drainage angle of the edge hole is an acute angle, and the drainage angle is the angle between the extension direction of the diffusion hole and the central axis of the diffusion plate.

[0024] In some technical solutions, the diffusing hole located in the central area has a drainage angle of 0°.

[0025] In some technical solutions, the upper surface and the lower surface of the diffuser plate are both plane and parallel.

[0026] In some technical solutions, the plurality of diffusion holes are distributed on a plurality of circles with different radii on the diffusion plate, and the drainage angles of the plurality of diffusion holes on the circles gradually increase as they gradually move away from the center of the diffusion plate. The drainage angle is the angle between the extension direction of the diffusion hole and the central axis of the diffusion plate.

[0027] In some technical solutions, the aperture of the diffusion hole gradually increases along the direction of the air flow in the diffusion hole.

[0028] In some technical solutions, the lower surface of the diffuser plate is a downward convex arc surface, and the upper surface of the gas distributor plate is a flat surface.

[0029] In some technical solutions, the upper surface of the diffuser plate is a plane or an upward convex arc surface or a downward concave arc surface.

[0030] In some technical solutions, the cover plate has a first recessed portion on a side facing the gas distribution device, and the upper surface of the gas distributor plate and the first recessed portion constitute the gas uniformity cavity; or,

[0031] The upper surface of the gas distribution plate has a second recessed portion, and the second recessed portion and the lower surface of the cover plate form the gas uniformity cavity; or,

[0032] The cover plate has a first recessed portion on a side facing the gas distribution device, and the upper surface of the gas distributor plate has a second recessed portion. The first recessed portion and the second recessed portion constitute the gas uniforming cavity.

[0033] In some technical solutions, there is one diffuser plate, which divides the uniform air cavity into a first sub-uniform air cavity and a second sub-uniform air cavity; the first sub-uniform air cavity is connected to the air inlet;

[0034] The first sub-gas uniformity chamber has a first funnel-shaped portion and a first cylindrical portion. The air inlet, the first funnel-shaped portion and the first cylindrical portion are arranged in sequence from top to bottom. The cross-sectional area of ​​the first funnel-shaped portion perpendicular to the central axis of the diffuser plate increases from top to bottom.

[0035] In some technical solutions, there is one diffuser plate, which divides the uniform air cavity into a first sub-uniform air cavity and a second sub-uniform air cavity; the first sub-uniform air cavity is connected to the air inlet;

[0036] The second sub-gas uniformity chamber has a second funnel-shaped portion and a second cylindrical portion. The air inlet, the first sub-gas uniformity chamber, the second funnel-shaped portion and the second cylindrical portion are arranged in sequence from top to bottom, and the cross-sectional area of ​​the second funnel-shaped portion perpendicular to the central axis of the diffuser plate increases from top to bottom.

[0037] In some technical solutions, the cross-sectional area of ​​each of the air-dividing holes perpendicular to the axis of the air-dividing holes is the same everywhere in the vertical direction;

[0038] The cross section of the air distribution hole located in the central area of ​​the air distribution plate and perpendicular to the axis of the air distribution hole has a first size and a second size in the circumferential direction, the first size is larger than the second size, and the first size is perpendicular to the direction of the second size.

[0039] In some technical solutions, the first size is the radial size of the gas separation hole along the gas separation plate.

[0040] In some technical solutions, the gas distribution holes located in the central area of ​​the gas distribution plate are elliptical holes, waist-shaped holes, or chamfered diamond-shaped holes.

[0041] In some technical solutions, the second dimensions of the plurality of gas distribution holes tend to increase along a direction from the center of the gas distribution plate to the edge of the gas distribution plate.

[0042] In some technical solutions, the minimum pore size of the diffusion hole is 5 to 30 times the mean free path of the gas molecules, and / or the pore depth of the diffusion hole is 5 to 30 times the mean free path of the gas molecules, and / or the minimum pore size of the gas separation hole is 5 to 30 times the mean free path of the gas molecules.

[0043] The second object of the present application is to provide a semiconductor processing equipment to solve the technical problem of uneven airflow during atomic layer deposition.

[0044] The semiconductor processing equipment provided in the present application includes a reaction chamber, a susceptor movably disposed in the reaction chamber, and the above-mentioned gas distribution device disposed in the reaction chamber.

[0045] By arranging the above-mentioned gas distribution device in the semiconductor processing equipment, the semiconductor processing equipment accordingly has all the advantages of the above-mentioned gas distribution device, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments or background technologies of the present application, the following briefly introduces the drawings required for use in the embodiments or background technology descriptions. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0047] FIG1 is a schematic diagram of the structure of the gas source pipeline in the background technology of this application;

[0048] FIG2 is a schematic structural diagram of an atomic layer deposition apparatus according to a first related art of the present application;

[0049] FIG3 is a schematic structural diagram of a semiconductor processing device provided in Example 1 of the present application;

[0050] FIG4 is a schematic diagram of a partial structure of a gas distribution device provided in Example 1 of the present application;

[0051] FIG5 is a half-sectional view of a diffuser plate in a gas distribution device provided in Example 1 of the present application;

[0052] FIG6 is a schematic structural diagram of a gas distribution plate in a gas distribution device provided in Example 1 of the present application;

[0053] FIG7 is a schematic diagram of a portion of the shape of the gas distribution holes of the gas distribution plate in the gas distribution device provided in Example 1 of the present application;

[0054] FIG8 is a schematic diagram showing the relationship between the free radical filtration loss percentage and the pore diameter of the gas distribution pores in the gas distribution device provided in Example 1 of the present application;

[0055] FIG9 is a schematic diagram showing the relationship between the free radical filtration loss percentage and the depth of the gas distribution pores in the gas distribution device provided in Example 1 of the present application;

[0056] FIG10 is a schematic diagram of the design process of the gas distribution plate in the gas distribution device provided in Example 1 of the present application;

[0057] FIG11 is a schematic structural diagram of a diffusion plate in a gas distribution device provided in Example 2 of the present application;

[0058] FIG12 is a half-sectional view of a diffusion plate in a gas distribution device provided in Example 2 of the present application;

[0059] FIG13 is a half-sectional view of another implementation of the diffusion plate in the gas distribution device provided in Example 2 of the present application;

[0060] FIG14 is a half-sectional view of a diffuser plate in a gas distribution device provided in Example 3 of the present application;

[0061] FIG15 is a half-sectional view of the diffusion plate in the gas distribution device provided in the fourth embodiment of the present application.

[0062] Description of reference numerals:

[0063] 010 - reaction chamber; 101 - gas distribution system; 102 - gas mixing system; 011 - first gas mixing pipeline; 012 - second gas mixing pipeline; 013 - first source gas pipeline; 131 - first on-off valve; 014 - second source gas pipeline; 141 - second on-off valve; 015 - first dilution gas; 016 - second dilution gas; 017 - wafer; 018 - base; 019 - gas extraction port;

[0064] 018'-base; 019'-exhaust cavity; 020-air inlet block; 030-cover plate; 040-gas distributor;

[0065] 11-first gas mixing pipeline; 12-second gas mixing pipeline; 13-first source gas pipeline; 132-first on-off valve; 14-second source gas pipeline; 142-second on-off valve; 15-first dilution gas; 16-second dilution gas; 17-base; 19-exhaust port; 20-air inlet block; 201-gas mixing channel; 30-cover plate; 31-air inlet; 40-gas distributor plate; 41-gas distributor hole; 50-diffuser plate; 51-diffuser hole; 511-edge hole; 60-reaction chamber; 70-side exhaust plate. DETAILED DESCRIPTION

[0066] Related technology 1:

[0067] FIG2 is a schematic structural diagram of the atomic layer deposition device of related technology 1. As shown in FIG2 , the atomic layer deposition device of related technology 1 currently commonly uses a central air intake method and a gas distribution structure corresponding to the central air intake position. The gas distribution structure includes a cover plate 030 and a gas distribution plate 040. When the airflow from the channel of the air intake block 020 enters the channel of the cover plate 030, it flows downward, and then the airflow is dispersed through a funnel-shaped channel structure, and then passes through the gas distribution plate 040 with many small holes for gas distribution, and then flows to the surface of the wafer (not shown in the figure) placed on the base 018', and finally is extracted by the exhaust chamber 019' located on the side of the reaction chamber and collected at the pump port and discharged into the atmosphere.

[0068] In the above scheme, the diffusion efficiency of the gas flow from the center to the edge is average. For mixed gas flows containing multiple gas components, the density of each gas component varies, and the diffusion efficiency also varies. Therefore, the denser gas components tend to concentrate in the center, resulting in a problem where the denser gas components are high in the center and low in the edges. Similarly, for gas flows carrying remote plasma radicals, the radicals are more concentrated in the center and more diluted at the edges.

[0069] In addition, the ordinary gas distribution plate 040 only considers the uniformity of the airflow, but for the airflow carrying remote plasma free radicals, the ordinary gas distribution plate 040 cannot evenly distribute the free radicals to achieve a balance between the free radicals in the central area and the edge area.

[0070] In order to make the above-mentioned objectives, features and advantages of the present application more clearly understood, the following detailed description of the specific embodiments of the present application is given in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0071] Example 1:

[0072] Figure 3 is a schematic diagram of the structure of semiconductor processing equipment provided in Example 1 of the present application; Figure 4 is a schematic diagram of a partial structure of the gas distribution device provided in Example 1 of the present application. As shown in Figures 3 and 4, the gas distribution device provided in Example 1 of the present application is applied to semiconductor processing equipment, such as an atomic layer deposition device. The semiconductor processing equipment includes a reaction chamber 60, a cover plate 30 disposed on top of the reaction chamber 60, and the cover plate 30 has an air inlet 31 connected to the interior of the reaction chamber 60; the gas distribution device is disposed below the cover plate 30.

[0073] The gas distribution device includes a gas distribution plate 40 and at least one diffusion plate 50; wherein, the gas distribution plate 40 is located below the air inlet 31, and a uniform air cavity is formed between the gas distribution plate 40 and the cover plate 30, and the gas distribution plate 40 has a plurality of gas distribution holes 41 that penetrate the plate thickness of the gas distribution plate 40; the at least one diffusion plate 50 is arranged in the above-mentioned uniform air cavity, and the uniform air cavity is divided into at least two sub-uniform air cavities spaced apart along the vertical direction; each diffusion plate 50 in the at least one diffusion plate 50 has a plurality of diffusion holes 51 that penetrate its own plate thickness; wherein, the sub-uniform air cavity adjacent to the cover plate 30 is connected to the air inlet 31; any two adjacent sub-uniform air cavities are connected through the diffusion holes 51; the sub-uniform air cavity adjacent to the gas distribution plate 40 is connected to the inside of the reaction cavity 60 through the gas distribution holes 41.

[0074] There are various ways to form a uniform gas cavity between the gas distributor plate 40 and the cover plate 30. In some embodiments, the cover plate 30 has a first recessed portion on the side facing the gas distribution device, and the upper surface of the gas distributor plate 40 and the first recessed portion form the uniform gas cavity. In other embodiments, the upper surface of the gas distributor plate 40 has a second recessed portion, and the second recessed portion and the lower surface of the cover plate 30 form the uniform gas cavity. In still other embodiments, the cover plate 30 has a first recessed portion on the side facing the gas distribution device, and a second recessed portion on the upper surface of the gas distributor plate 40, and the first and second recessed portions form the uniform gas cavity.

[0075] In each embodiment, the cover plate 30 has a first recessed portion on the side facing the gas distribution device. The upper surface of the gas distributor plate 40 and the first recessed portion form a uniform gas cavity. The gas distribution device provided in the first embodiment of the present application is described using the diffuser plate 50 as an example. Specifically, the gas distribution device includes: the gas distributor plate 40 and the diffuser plate 50.

[0076] The gas distributor plate 40 is located below the first recessed portion, and the upper surface of the gas distributor plate 40 and the first recessed portion form a uniform gas chamber. The gas distributor plate 40 has multiple gas distribution holes 41 that extend through the thickness of the gas distributor plate 40. The diffuser plate 50 is located between the gas distributor plate 40 and the cover plate 30 and is disposed within the uniform gas chamber, dividing the uniform gas chamber into a first sub-uniform gas chamber and a second sub-uniform gas chamber. The diffuser plate 50 has multiple diffusion holes 51 that extend through the thickness of the diffuser plate 50. The first sub-uniform gas chamber and the second sub-uniform gas chamber are connected through the diffusion holes 51. The first sub-uniform gas chamber is connected to the air inlet 31, and the air inlet 31 is connected to the reaction chamber 60 through the first and second sub-uniform gas chambers.

[0077] In this embodiment, the diffuser plate 50 is connected to the cover plate 30 via a screw thread connection. The radius of the diffuser plate 50 is between 50 mm and 100 mm. The distance between the air inlet 31 and the diffuser plate 50 is generally within 20 mm. The cavity of the first recessed portion, located between the outlet end of the air inlet 31 and the upper surface of the diffuser plate 50, is a conical cavity with a semi-cone angle greater than 45°.

[0078] Taking the semiconductor processing equipment as an atomic layer deposition equipment as an example, the process gas enters the channel of the gas inlet block 20 through the side gas inlet of the gas inlet block 20 and flows vertically downward to the gas inlet 31 of the cover plate 30. The side gas inlet generally includes multiple gas inlets to enable different reaction gases to enter the reaction chamber 60 independently, alternately or in pulses to achieve atomic layer deposition growth. Each group of gases includes a reaction source gas, a carrier gas, a dilution gas, etc. At the same time, the gas in the gas inlet 31, such as a pure gas, such as nitrogen, and a mixed gas carrying remote plasma radicals also enter the cover plate 30 through the gas inlet 31. In a specific embodiment, as shown in Figure 3, the atomic layer deposition equipment also includes a gas inlet block 20, a first mixed gas pipeline 11, a second mixed gas pipeline 12, a first source gas pipeline 13, a second source gas pipeline 14, a first dilution gas pipeline 15 and a second dilution gas pipeline 16 arranged on the top of the cover plate 30. The first source gas pipeline 13 and the first dilution gas pipeline 15 are both connected to the first air inlet of the gas mixing channel 201 of the air intake block 20 via the first gas mixing pipeline 11. The second source gas pipeline 14 and the second dilution gas pipeline 16 are both connected to the second air inlet of the gas mixing channel 201 of the air intake block 20 via the second gas mixing pipeline 12. The gas outlet of the gas mixing channel 201 is connected to the gas inlet 31. In addition, a first on-off valve 132 and a second on-off valve 142 are respectively provided on the first source gas pipeline 13 and the second source gas pipeline 14.

[0079] In this embodiment, the gas flow direction at the air inlet 31 is perpendicular to the diffuser plate 50 and the gas distributor plate 40 as a whole. In other words, the axial direction of the conical cavity is also perpendicular to the diffuser plate 50 and the gas distributor plate 40.

[0080] The merged airflow then mixes and flows downward in the air inlet 31 of the cover plate 30, and sequentially enters the two-stage structure formed by the diffuser plate 50 and the air distributor plate 40 for efficient diffusion and air distribution. In this two-stage structure, the airflow first passes through the diffuser plate 50. In the first sub-gas chamber, after the airflow contacts the diffuser plate 50, it cannot pass directly through the area of ​​the air inlet 31 corresponding to the diffuser plate 50. Instead, it passes through an area outside the area of ​​the air inlet 31 corresponding to the diffuser plate 50, thereby increasing the dispersion of the airflow. Therefore, the airflow will disperse and flow to a large area of ​​the second sub-gas chamber, rather than concentrating in the central area of ​​the second sub-gas chamber. Next, the airflow in the second sub-gas chamber will pass through the air distributor holes 41 on the air distributor plate 40 into the reaction area within the reaction chamber 60, reaching the surface of the wafer placed on the base 17, where a chemical reaction occurs under the action of heat or the plasma environment, and a thin film grows.

[0081] By providing at least one diffuser plate 50, the present application allows the airflow to flow along the upper surface of the diffuser plate 50 after encountering the solid portion of the diffuser plate 50 in each sub-uniform air cavity, thereby passing through the diffusion holes 51 of the diffuser plate 50. Because the distribution area of ​​the diffusion holes 51 on the diffuser plate 50 is larger than the corresponding area of ​​the air inlet 31 on the diffuser plate 50, the degree of dispersion of the airflow from the diffuser plate 50 to the next sub-uniform air cavity after passing through the diffuser plate 50 is greater than the degree of dispersion of the airflow from the diffuser plate 50 to the previous sub-uniform air cavity, thereby improving the uniformity of the airflow in different areas and reducing the concentration of the airflow in the central area of ​​the air distributor plate 40, which is conducive to improving the uniformity of the process.

[0082] Figure 5 is a half-sectional view of the diffusion plate in the gas distribution device provided in Example 1 of the present application; as shown in Figures 3 to 5, preferably, the diffusion plate 50 has a central area and an edge area surrounding the central area; the central area and the edge area are both provided with multiple diffusion holes 51.

[0083] It should be noted that the present application does not limit the size of the central area and the edge area of ​​the diffuser plate 50 , and the size can be specifically designed according to the specific product.

[0084] For example, taking the diffusion hole 51 located in the edge area as the edge hole 511, the edge hole 511 gradually moves away from the central axis of the diffusion plate 50 from its air inlet end to the air outlet end, that is, the extension direction of the edge hole 511 is not parallel to the central axis of the diffusion plate 50.

[0085] In a specific implementation, the diffusion holes 51 in the central area and the edge area can be evenly distributed along multiple rings, and the diffusion holes 51 located on the same ring can be at the same distance from the center of the diffusion plate 50 .

[0086] In one embodiment, the area where the diffusion holes 51 located in the outermost circle is located is the edge area, that is, the edge holes 511 are the diffusion holes 51 in the outermost circle.

[0087] Specifically, in this embodiment, the angle between the extension direction of the diffuser hole 51 and the central axis of the diffuser plate 50 is defined as the diversion angle θ of the diffuser hole 51. The diversion angle θ may be an acute angle. The direction of the central axis of the diffuser plate 50 may be aligned with the direction of air entering the uniform air chamber from the air inlet 31. In other words, the diversion angle θ may be understood as the angular change in the direction of the airflow as it passes through the diffuser plate 50 relative to the direction of the airflow exiting the air inlet 31.

[0088] By making the drainage angle θ of the edge hole 511 located at the edge of the diffuser plate 50 an acute angle, the airflow at the edge position of the upper surface of the diffuser plate 50 can be diffused radially outward. At the same time, since this part of the airflow has a horizontal velocity component in the edge hole 511 of the diffuser plate 50, when this part of the airflow leaves the diffuser plate 50 and enters the second sub-uniform air cavity, it will continue to flow toward the outer edge position. Further, when it encounters the upper surface of the air distributor plate 40, its ability to flow outward along the upper surface of the air distributor plate 40 will also be improved, thereby improving the uniformity of the airflow flowing through the edge position of the air distributor plate 40 and the airflow flowing through the center position of the air distributor plate 40.

[0089] In another implementation, the diversion angle θ of all the diffusion holes 51 can be set to 0°. Since the diffusion plate 50 has a large flow rate, it will produce a pressure-holding effect and have a certain uniform flow and gas distribution effect. Even if the holes in the middle area of ​​the gas distribution plate 40 have more holes than the edge air intake, the trend will not change. However, compared with no diffusion plate 50, this difference is much smaller. Therefore, it can meet the requirements for working conditions with low requirements.

[0090] As shown in FIG. 3 to FIG. 5 , preferably, the diversion angle θ of the diffusion hole 51 located in the central area may be 0°.

[0091] Specifically, in this embodiment, on the diffuser plate 50, except for the diffuser holes 51 in the outermost circle, the rest of the diffuser holes 51 are all facing downward, and only the airflow entering from the air inlet 31 in the central area is dispersed into several downward airflows. As for the adjustment of the diffusion capacity, it can be achieved by changing the aperture R and distributing the hole density.

[0092] Specifically, the lower surface of the diffuser plate 50 is a conical surface at the edge hole 511. Such a setting is conducive to shortening the local thickness of the diffuser plate 50 through which the edge hole 511 passes. Combined with the adjustment of the drainage angle θ, the hole depth h of the edge hole 511 can be made the same as that of other diffuser holes 51, thereby obtaining consistent flow resistance when the aperture R is the same.

[0093] By arranging the diffusion holes 51 in the above manner and unifying the drilling directions of more diffusion holes 51 to be perpendicular to the thickness direction of the diffusion plate 50 , the design difficulty and manufacturing cost can be reduced, and the method is suitable for situations where the diffusion requirement is not high.

[0094] As shown in FIG. 3 to FIG. 5 , preferably, the upper surface and the lower surface of the diffusion plate 50 are both plane and parallel.

[0095] Since the upper and lower surfaces of the diffuser plate 50 are both flat, the hole depth h of the diffuser hole 51 is consistent. When the aperture R is the same, the flow resistance is also the same, and almost consistent hole flow can be obtained, which is not only convenient for processing, but also helps to improve the flow consistency of the gas distribution plate 40.

[0096] As shown in FIG3 and FIG4 , preferably, the first sub-gas uniformity chamber has a first funnel-shaped portion and a first cylindrical portion, and the air inlet 31 , the first funnel-shaped portion and the first cylindrical portion are arranged in sequence from top to bottom.

[0097] The cross-sectional area of ​​the first funnel-shaped portion, perpendicular to the central axis of the diffuser plate 50, increases from top to bottom. The first funnel-shaped portion is a conical or quadrangular pyramidal depression provided on the lower surface of the cover plate 30, while the first cylindrical portion is a cylindrical depression provided on the upper surface of the diffuser plate 50. Together, the first funnel-shaped portion forms a first sub-gas-uniform cavity.

[0098] By setting the first sub-uniform air chamber into a shape in which the air inlet 31, the first funnel-shaped portion and the first cylindrical portion are arranged in sequence from top to bottom, the gas can enter from the air inlet 31 and first diffuse radially outward through the first funnel-shaped portion. After entering the area of ​​the first cylindrical portion, it passes through the diffusion plate 50, thereby improving the uniformity of the gas when it flows into the diffusion hole 51 of the diffusion plate 50, which is ultimately beneficial to improving the uniformity of the gas entering the reaction chamber 60.

[0099] Preferably, the second sub-gas-homogenizing cavity has a second funnel-shaped portion and a second cylindrical portion, and the air inlet 31 , the second funnel-shaped portion and the second cylindrical portion are arranged in sequence from top to bottom.

[0100] The cross-sectional area of ​​the second funnel-shaped portion, perpendicular to the central axis of the diffuser plate 50, increases from top to bottom. The second funnel-shaped portion is a conical or quadrangular pyramidal depression provided on the lower surface of the cover plate 30, while the second columnar portion is a cylindrical depression provided on the upper surface of the gas distributor plate 40. Together, they form the second sub-gas-uniform cavity. Specifically, the depression on the lower surface of the cover plate 30 forms a "cone-column-cone" hole. The first "cone" is the first funnel-shaped portion, while the inner wall of the "column" mates with the outer circumference of the diffuser plate 50 to accommodate it. The second "cone" is the second funnel-shaped portion.

[0101] By configuring the second sub-gas-uniform chamber to have the gas inlet 31, the second funnel-shaped portion, and the second cylindrical portion arranged sequentially from top to bottom, the gas, after exiting the diffusion holes 51 of the diffuser plate 50, first diffuses radially outward through the second funnel-shaped portion. This allows the gas to diffuse fully radially outward, particularly in the peripheral region where the axes of the peripheral holes 511 extend outward. After entering the second cylindrical portion, the gas then passes through the gas distribution holes 41 of the gas distributor plate 40, thereby improving the uniformity of the gas flowing into the gas distribution holes 41 of the gas distributor plate 40 and ultimately improving the uniformity of the gas entering the reaction chamber 60.

[0102] Figure 6 is a schematic diagram of the structure of the gas distribution plate in the gas distribution device provided in Example 1 of the present application. As shown in Figures 4 and 6, the cross-sectional area of ​​each gas distribution hole 41 perpendicular to the axis of the gas distribution hole 41 is preferably the same in the vertical direction. The cross-sectional area of ​​the gas distribution hole 41 located in the central region of the gas distribution plate 40 perpendicular to its axis has a first dimension and a second dimension in the circumferential direction, where the first dimension is greater than or equal to the second dimension, and the first dimension is perpendicular to the direction of the second dimension.

[0103] For example, the gas distributor plate has a central region and an edge region surrounding the central region. The second dimension of the gas distributor holes 41 located in the central region increases from the center of the gas distributor plate to the edge region of the gas distributor plate.

[0104] In one embodiment, within the central region of the air distributor plate 40, each circle of air distributor holes 41 has a larger second dimension than the radially inner circle of air distributor holes 41. In another implementation, adjacent circles of air distributor holes 41 may have the same second dimension, while the outer circles may have a larger second dimension than these circles. For example, the two innermost circles of air distributor holes 41 have the same second dimension, while the third through fifth circles of air distributor holes 41 from the innermost circle have the same second dimension, but are larger than the second dimension of the two innermost circles of air distributor holes 41. The sixth and seventh circles of air distributor holes 41 have larger second dimensions, but the sixth and seventh circles have the same dimensions.

[0105] In some embodiments, in the present application, the first size and the second size of the air separation hole 41 can be set equal in the edge region of the air separation plate 40. For example, in the edge region of the air separation plate 40, the interface shape of the air separation hole 41 can be circular.

[0106] By setting the cross-sectional area of ​​each gas distribution hole 41 perpendicular to its axis to be uniform in the vertical direction, the flow conductance of each gas distribution hole 41 is almost uniform, ensuring a uniform gas flow. This achieves a dual distribution effect of airflow and free radicals, namely, uniform airflow and free radical passage, thereby improving wafer processing quality.

[0107] Because plasma radicals recombine upon contact with the wall, after assisted diffusion by the diffuser plate 50, the free radicals in the airflow from the diffusion holes 51 in the central region of the diffuser plate 50 in the space above the gas distributor plate 40 inevitably come into contact with the upper surface of the gas distributor plate 40 and recombine in large quantities as they move outward from the center of the second sub-gas chamber, resulting in a decrease in the free radical concentration in the outer region.

[0108] For free radicals, their efficiency when passing through the hole is mainly determined by the smallest size. Narrow and long structures are not conducive to their passage, and molecular motion and collision easily contact the inner surface of the hole. Therefore, the second size of the air distribution holes 41 in the middle area of ​​the air distribution plate 40 is shortened to reduce the efficiency of free radicals passing through this part of the air distribution holes 41. The second size of the air distribution holes 41 in the edge area is made larger than the air distribution holes 41 in the middle area, so that the efficiency of free radicals passing through the edge area is higher than that in the middle area. This weakens or even eliminates the original effect of high free radical concentration in the middle area and low free radical concentration in the edge area. The concentration of free radicals reaching the wafer surface is as consistent as possible in the middle area and the edge area, thereby improving the process quality.

[0109] As shown in FIG. 6 , preferably, the first size is the radial size of the gas distribution hole 41 along the gas distribution plate 40 .

[0110] The direction of the first dimension is the length direction of the air separation hole 41. Setting the length direction to the radial direction of the air separation plate 40 can reduce the influence of the holes set on the air separation plate 40 on the radial flow of the air flow when the air flow flows radially on the surface of the air separation plate 40, so that the air flow can flow continuously, so that the air flow on the surface of the air separation plate 40 is smoother, thereby ensuring the uniform air flow effect of the air separation plate 40.

[0111] In another implementation, the first dimension may not be the radial dimension of the air-dividing hole 41 along the air-dividing plate 40. For example, the first dimension is the circumferential dimension of the air-dividing hole 41 along the air-dividing plate 40, that is, the length direction of the air-dividing hole 41 is the tangential dimension of the air-dividing plate 40 at the position where the air-dividing hole 41 is located. Even the direction of the first dimension of each air-dividing hole 41 is randomly distributed. As long as the ratio of the first dimension to the second dimension is as described above, it can also play the role of improving the uniformity of the free radical concentration by adjusting the passage efficiency of the free radicals.

[0112] Figure 7 is a schematic diagram of the partial shape of the gas distribution holes 41 of the gas distribution plate in the gas distribution device provided in Example 1 of the present application; as shown in Figure 7, preferably, the gas distribution holes 41 located in the central area of ​​the gas distribution plate 40 are elliptical holes, waist-shaped holes, or chamfered diamond-shaped holes.

[0113] The air separation holes 41 are set to the above shape, so as to achieve the flow rate of balanced free radicals and improve the processing performance of the air separation holes 41 and reduce the manufacturing cost.

[0114] As shown in Figure 6 , the second dimension of the plurality of air distribution holes 41 preferably increases from the center of the air distribution plate 40 to the edge of the plate 40. For example, the aspect ratio of the air distribution holes 41 gradually decreases from the center of the plate 40 to the edge of the plate 40. In other words, if the cross-sectional area of ​​each air distribution hole 41 perpendicular to the axis of the air distribution hole 41 remains constant, the second dimension gradually increases from the center of the plate 40 to the edge of the plate 40.

[0115] By increasing the second dimensions of the plurality of air separation holes 41 along the direction from the center of the air separation plate 40 to the edge of the air separation plate 40, for example, gradually reducing the aspect ratio of the air separation holes 41, the efficiency of the air separation holes 41 for the passage of free radicals can be gradually improved along the radial direction from the inside to the outside of the air separation plate 40, which can match the gradually decreasing density of free radicals on the upper surface of the air separation plate 40, so as to improve the uniformity of the free radical density on the lower surface of the air separation plate 40, thereby improving the processing quality of the product.

[0116] Preferably, the minimum pore size of the diffusion hole 51 (for example, the pore size is R when the diffusion hole 51 is circular) is 5 to 30 times the mean free path of the gas molecules, and / or the pore depth h of the diffusion hole 51 is 5 to 30 times the mean free path of the gas molecules, and / or the minimum pore size Ra of the gas separation hole 41 is 5 to 30 times the mean free path of the gas molecules.

[0117] Among them, the minimum aperture Ra of the air dividing hole 41 refers to the radius of the air dividing hole 41 if the air dividing hole 41 is a circular hole, the semi-minor axis length of the ellipse if the air dividing hole 41 is an ellipse, or half of the length of the shorter opposite side of the shorter rhombus if it is a chamfered rhombus hole, or half of the width of the waist-shaped hole.

[0118] In this embodiment, the aperture R of each diffusion hole 51 in each circle is the same, but the aperture of the diffusion holes 51 between different circles can be uniformly or non-uniformly enlarged. The design of the aperture is related to the filtration efficiency of free radicals. Under low-pressure conditions, free radicals have a large amount of collision movement. As the aperture R becomes smaller, the probability of free radicals contacting the pore wall when moving in the diffusion hole 51 gradually increases, and the composite loss generated after the release from the pore wall will also increase, as shown in Figure 9. Similarly, the pore depth h is the same. The larger the pore depth h, the greater the composite loss, as shown in Figure 8. Therefore, the aperture R and pore depth h should refer to the average molecular free path of the gas. Generally in Between 5 and 30 times.

[0119] The mean molecular free path The following relationship is satisfied:

[0120] Among them, k is a constant, T is the temperature of gas molecules, σ is the collision diameter of gas molecules, which is related to the type of gas, and p is the pressure.

[0121] Similarly, if the aperture R of the gas separation hole 41 is circular, or the minimum aperture Ra of the gas separation hole 41 is non-circular, it is also between 5 and 30 times the average molecular free path of the gas.

[0122] Taking the oval-shaped gas distribution holes 41 in the middle area as an example, the design process of the gas distribution plate 40 is shown in FIG10 :

[0123] First, an estimate is made based on the gas and process parameters (including power, gas volume, pressure, etc.) to determine the density of free radicals (such as the free radical density of remote plasma) and the flow conductance of the gas distribution holes 41 required to evenly distribute the gas; then, the aperture and number of the gas distribution holes 41 with a circular cross-section in the outermost circle are determined; then, based on the free radical density and the probability of compound loss, the length of the minor axis and the major axis of the ellipse that can balance the free radical loss are calculated; then, the actual effect is tested by sample preparation. If it is not satisfied, the calculation parameters are corrected according to the results, and the number or diameter of the circular and elliptical gas distribution holes 41 are adjusted at the same time, until the process results after sample preparation meet the design requirements, and the cycle ends.

[0124] Example 2:

[0125] Figure 11 is a schematic structural diagram of a diffuser plate in a gas distribution device according to a second embodiment of the present application; Figure 12 is a half-sectional view of a diffuser plate in a gas distribution device according to the second embodiment of the present application. As shown in Figures 11 and 12, the main difference between this embodiment and the first embodiment is that the plurality of diffuser holes 51 are distributed on a plurality of circumferences of different radii on the diffuser plate 50, and the diversion angle θ of the diffuser holes 51 on the plurality of circumferences gradually increases as they move away from the center of the diffuser plate 50. The diversion angle θ is the angle between the extension direction of the diffuser hole 51 and the central axis of the diffuser hole 51.

[0126] Specifically, in this embodiment, the diffuser holes 51 are distributed in a circle on the diffuser plate 50. That is, multiple diffuser holes 51 may be provided at a certain distance from the center of the diffuser plate 50. The diversion angle θ of the diffuser holes 51 gradually increases, either uniformly or non-uniformly. A uniform increase means that the diversion angle θ of each circle of diffuser holes 51 increases by a fixed value compared to the adjacent circle, or that the axes of the diffuser holes 51 in all circles point to the same point.

[0127] Furthermore, the drainage angle θ is always maintained at an acute angle, resulting in a very smooth drainage process with low flow resistance, which minimizes the impact on the wall recombination of plasma radicals. This achieves efficient distribution of gas flow and radicals with minimal flow resistance and recombination, making it particularly suitable for the requirements of ALD processes and equipment.

[0128] By gradually increasing the diversion angle θ of the multiple circumferential diffusion holes 51 as they move away from the center of the diffuser plate 50, the airflow entering the diffusion holes 51 from above the diffuser plate 50 is distributed and deflected, thereby facilitating diffusion. This facilitates a gradual increase in the angle between the airflow in the diffusion holes 51 at locations farther from the diffuser plate 50 and the airflow at the center of the diffuser plate 50. This increases the ability of the airflow at these locations to further diffuse outward after passing through the diffuser plate 50, thereby increasing the airflow concentration at the edge of the gas distributor plate 40, improving the uniformity of gas distribution above the gas distributor plate 40, and enhancing processing quality.

[0129] As shown in FIG. 4 , FIG. 11 and FIG. 12 , preferably, the lower surface of the diffuser plate 50 is a downward convex arc surface, and the upper surface of the gas distributor plate 40 is a flat surface.

[0130] Since the lower surface of the diffuser plate 50 is a downward convex arc surface and the upper surface of the air distributor plate 40 is a plane, the fluid space between the diffuser plate 50 and the air distributor plate 40 is inconsistent, and the airflow coming out of the diffuser hole 51 is more likely to be squeezed outward and further diffused to the edge area.

[0131] As shown in FIG. 11 and FIG. 12 , preferably, the upper surface of the diffusion plate 50 is a plane.

[0132] By setting the diffuser plate 50 to have a flat upper surface and a convex lower surface, the effective lengths of the diffuser holes 51 in the center area and the diffuser holes 51 in the edge area can be made consistent, or the effective length of the diffuser holes 51 in the edge area can be made smaller.

[0133] Figure 13 is a half-sectional view of another implementation of the diffusion plate in the gas distribution device provided in Example 2 of the present application; as shown in Figure 13, preferably, the aperture of the diffusion hole 51 gradually increases along the direction of the air flow in the diffusion hole 51.

[0134] Setting the diffusion hole 51 in the form of a trumpet hole can make the airflow diffuse inside the diffusion hole 51 instead of maintaining a consistent flow direction inside the hole, thereby enhancing the diffusion effect and improving the uniformity of the airflow.

[0135] Example 3:

[0136] Figure 14 is a half-sectional view of the diffuser plate in the gas distribution device provided in Example 3 of the present application; as shown in Figure 14, the difference between this embodiment and Example 2 is that the upper surface of the diffuser plate 50 in this embodiment is an upward convex arc surface.

[0137] The diffuser plate 50 has an upper convex curved surface and a lower convex curved surface. This allows the diffuser holes 51 in the central region of the diffuser plate 50 to have a larger effective length h. Flow resistance is related to the effective length h: a larger effective length h increases the flow resistance, and the correspondingly smaller air volume through the diffuser holes 51 in this region. Therefore, the flow resistance can be adjusted by adjusting the effective lengths of the diffuser holes 51 in the central region and the diffuser holes 51 in the edge regions.

[0138] Example 4:

[0139] Figure 15 is a half-sectional view of the diffuser plate in the gas distribution device provided in Example 4 of the present application; as shown in Figure 15, the difference between this embodiment and Example 3 is that the upper surface of the diffuser plate 50 in this embodiment is a concave arc surface.

[0140] The upper surface of the diffuser plate 50 is a concave arc surface, and the lower surface is a convex arc surface, so the effective length of the diffuser hole 51 in the central area and the edge area can be consistent, and the flow resistance under the same conditions is also consistent, so the flow rate is also consistent, which is conducive to improving the uniformity of the airflow.

[0141] In short, whether the upper surface of the diffuser plate 50 is horizontal or a convex surface or a concave surface, the thickness of the diffuser plate 50 at different positions can be adjusted, that is, the effective hole length h of the diffuser hole 51 in the central area or the diffuser hole 51 in the edge area can be adjusted, and then the flow resistance in the central area and the edge area can be adjusted, thereby adjusting the air intake volume.

[0142] By adjusting the diffusing hole 51's diversion angle θ, the diffusing hole 51's orientation can be altered, so that the effective hole length h of the diffusing hole 51 in the edge region is smaller than that in the center region. This reduces the flow resistance of the diffusing hole 51 in the edge region, allowing more airflow to pass through the diffusing hole 51 in the edge region, thereby reducing the central concentration of gas. Furthermore, adjusting the diffusing angle θ can redirect the gas flowing out of the diffusing hole 51, even if the effective hole length h and flow rate remain the same, allowing it to diffuse more quickly to the edge of the upper surface of the gas distributor 40, thereby improving airflow uniformity.

[0143] By configuring the edge holes 511 as outwardly slanted holes, a central circle or diffuser hole 51 configured vertically downward, and the remaining diffuser holes 51 increasing in radial, stepped increments, the diversion angle θ can be gradually increased. By adjusting the angle, the diffusion direction and the effective length of the diffuser holes 51 can be changed, thereby adjusting the diffusion capacity. While the structure is complex, with numerous adjustable parameters, the design is challenging, and the processing requirements and manufacturing costs are high, it can adapt to different process types or hardware conditions. It is particularly suitable for remote plasma radicals that are prone to wall recombination and gases that are difficult to diffuse due to their high density, such as organic source gases. Of course, the diffusion requirements and capacity depend on the actual needs of the machine's airflow. The diversion angle θ and the difference in the effective length h of the diffuser holes 51 in the central and edge regions are not necessarily larger. Otherwise, the phenomenon of more air inflow and more accumulation in the central region will be reversed, resulting in more air inflow or even accumulation in the edge regions. Embodiments 3 and 4 are respectively solutions for achieving different diffusion capacities, each with its own suitable operating conditions.

[0144] Embodiment 5:

[0145] As shown in FIG3 , the semiconductor processing equipment provided in the fifth embodiment of the present application includes a reaction chamber 60 , a susceptor 17 disposed in the reaction chamber 60 , and the above-mentioned gas distribution device disposed in the reaction chamber 60 .

[0146] The reaction chamber 60 is further provided with a side exhaust plate 70. A gas extraction chamber is formed between the side exhaust plate 70 and the reaction chamber 60, which is connected to the exhaust port 19 provided at the bottom of the reaction chamber 60. The gas is used to extract the gas that has entered the reaction chamber 60 from the gas inlet 31 and reacted with the wafer on the susceptor 17. Specifically, the airflow from the gas inlet 31 is divided by the above-mentioned gas distribution device and flows to the surface of the wafer (not shown in the figure) on the susceptor 17 built into the reaction chamber 60. The gas that has reacted with the wafer on the susceptor 17 is extracted by the exhaust chamber located on the inner side of the reaction chamber 60 and then collected at the exhaust port 19 and discharged into the atmosphere.

[0147] In some embodiments, the semiconductor processing equipment is, for example, an atomic layer deposition equipment.

[0148] By arranging the above-mentioned gas distribution device in the semiconductor processing equipment, the semiconductor processing equipment accordingly has all the advantages of the above-mentioned gas distribution device, which will not be described in detail here.

[0149] Although the present application is disclosed as above, the present application is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined by the claims.

[0150] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, article, or device that includes the element.

[0151] In the above embodiments, the descriptions of directions such as “upper” and “lower” are all based on the drawings.

[0152] The above description of the disclosed embodiments is intended to enable those skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application.

[0153] Thus, the present application will not be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution device, applied to semiconductor processing equipment; the semiconductor processing equipment comprises a reaction chamber, a cover plate is arranged on the top of the reaction chamber, and the cover plate has an air inlet connected to the reaction chamber; characterized in that: The gas distribution device is used to be arranged below the cover plate, and the gas distribution device comprises: a gas distribution plate and at least one diffusion plate; The gas distribution plate is located below the air inlet, and a uniform air cavity is formed between the gas distribution plate and the cover plate, and the gas distribution plate has a plurality of gas distribution holes that penetrate the thickness of the gas distribution plate; The at least one diffuser plate is arranged in the uniform air chamber, and divides the uniform air chamber into at least two sub-uniform air chambers spaced apart along the vertical direction; each of the at least one diffuser plate has a plurality of diffusion holes that penetrate the thickness of the diffuser plate; wherein the sub-uniform air chamber adjacent to the cover plate is connected to the air inlet; any two adjacent sub-uniform air chambers are connected through the diffusion holes; and the sub-uniform air chamber adjacent to the gas distributor plate is connected to the interior of the reaction chamber through the gas distributor hole.

2. The gas distribution device according to claim 1, characterized in that: The diffusion plate has a central area and an edge area surrounding the central area; the central area and the edge area are both provided with a plurality of diffusion holes; The diffusion holes located in the edge area are edge holes, and the edge holes gradually move away from the central axis of the diffusion plate from the air inlet end to the air outlet end.

3. The gas distribution device according to claim 2, characterized in that: The drainage angle of the edge hole is an acute angle, and the drainage angle is the angle between the extension direction of the diffusion hole and the central axis of the diffusion plate.

4. The gas distribution device according to claim 3, characterized in that: The diffusing holes located in the central area have a drainage angle of 0°.

5. The gas distribution device according to claim 4, characterized in that: The upper surface and the lower surface of the diffusion plate are both plane and arranged in parallel.

6. The gas distribution device according to claim 1, characterized in that: The plurality of diffusion holes are distributed on a plurality of circles with different radii of the diffusion plate, and the diversion angles of the diffusion holes on the plurality of circles gradually increase as they gradually move away from the center of the diffusion plate. The diversion angle is the angle between the extension direction of the diffusion hole and the central axis of the diffusion plate.

7. The gas distribution device according to claim 1 or 6, characterized in that: Along the direction of air flow in the diffusion hole, the aperture of the diffusion hole gradually increases.

8. The gas distribution device according to claim 6, characterized in that: The lower surface of the diffusion plate is a downward convex arc surface, and the upper surface of the gas distribution plate is a flat surface.

9. The gas distribution device according to claim 8, characterized in that: The upper surface of the diffusion plate is a plane or an upward convex arc surface or a downward concave arc surface.

10. The gas distribution device according to any one of claims 1 to 6, characterized in that: The cover plate has a first recessed portion on one side facing the gas distribution device, and the upper surface of the gas distribution plate and the first recessed portion form the gas uniformity cavity; or, The upper surface of the gas distribution plate has a second recessed portion, and the second recessed portion and the lower surface of the cover plate form the gas uniforming cavity; or, The cover plate has a first recessed portion on one side facing the gas distribution device, and the upper surface of the gas distribution plate has a second recessed portion, and the first recessed portion and the second recessed portion constitute the gas uniforming cavity.

11. The gas distribution device according to any one of claims 1 to 6, characterized in that: There is one diffuser plate, which divides the uniform air cavity into a first sub-uniform air cavity and a second sub-uniform air cavity; the first sub-uniform air cavity is connected to the air inlet; The first sub-gas-homogenizing cavity has a first funnel-shaped portion and a first cylindrical portion. The air inlet, the first funnel-shaped portion and the first cylindrical portion are arranged in sequence from top to bottom. The cross-sectional area of ​​the first funnel-shaped portion perpendicular to the central axis of the diffuser plate increases from top to bottom.

12. The gas distribution device according to any one of claims 1 to 6, characterized in that: There is one diffuser plate, which divides the uniform air cavity into a first sub-uniform air cavity and a second sub-uniform air cavity; the first sub-uniform air cavity is connected to the air inlet; The second sub-gas-uniform cavity has a second funnel-shaped portion and a second cylindrical portion. The air inlet, the first sub-gas-uniform cavity, the second funnel-shaped portion and the second cylindrical portion are arranged in sequence from top to bottom. The cross-sectional area of ​​the second funnel-shaped portion perpendicular to the central axis of the diffuser plate increases from top to bottom.

13. The gas distribution device according to any one of claims 1 to 6, characterized in that: The cross-sectional area of ​​each of the air distribution holes perpendicular to the axis of the air distribution holes is the same everywhere in the vertical direction; The cross section of the air distribution hole located in the central area of ​​the air distribution plate and perpendicular to the axis of the air distribution hole has a first size and a second size in the circumferential direction, the first size is larger than the second size, and the first size is perpendicular to the direction of the second size.

14. The gas distribution device according to claim 13, characterized in that The first size is a size of the gas separation hole along the radial direction of the gas separation plate.

15. The gas distribution device according to claim 13, characterized in that: The gas distribution holes located in the central area of ​​the gas distribution plate are elliptical holes, waist-shaped holes, or chamfered diamond-shaped holes.

16. The gas distribution device according to claim 13, characterized in that Along the direction from the center of the gas distributor plate to the edge of the gas distributor plate, the second dimensions of the plurality of gas distributor holes tend to increase.

17. The gas distribution device according to claim 13, characterized in that The minimum pore size of the diffusion hole is 5 to 30 times the mean free path of gas molecules, and / or the pore depth of the diffusion hole is 5 to 30 times the mean free path of gas molecules, and / or the minimum pore size of the gas separation hole is 5 to 30 times the mean free path of gas molecules.

18. A semiconductor processing equipment, characterized in that: The invention comprises a reaction chamber, a base arranged in the reaction chamber, and a gas distribution device according to any one of claims 1 to 17 arranged in the reaction chamber.

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