Convection cooling device, cooling chamber and process arrangement

Abstract

The invention relates to a convection cooling device (100), having: a cooling region (150); a plurality of gas outlets (102a) (e.g. arranged one behind the other in a row), of which each gas outlet (102a) is adjacent to the cooling region (150); a gas distribution housing which has a cavity which interconnects the gas outlets (102a) in a gas-conducting manner, wherein the gas outlets (102a) are preferably arranged between the cooling region (150) and the cavity; a gas supply line (202) which opens into a first portion of the cavity and is coupled in a gas-conducting manner by means of the gas outlets (102a) to the cooling region (150) in order to supply gas to the cooling region (150) by means of the gas outlets (102a); a first gas distribution structure which is arranged in the cavity between the first portion and the gas outlets and is penetrated by a first plurality of channels, each of which channels opens into the first portion.

Description

[0001] Description

[0002] Convection cooling device, cooling chamber and process arrangement

[0003] Various embodiments relate to a convection cooling device, a cooling chamber and a process arrangement.

[0004] In general, a substrate, such as a glass substrate, a metal substrate, and / or a polymer substrate, can be treated (processed), e.g., coated, so that the chemical and / or physical properties of the substrate can be modified. Various coating processes can be used to coat a substrate. For example, a vacuum coating system can be used to deposit one or more layers on one or more substrates using chemical and / or physical vapor deposition.In order to achieve efficient deposition on a large number of substrates, a so-called inline system can be used, in which a substrate is transported through the entire system, for example by means of rollers, whereby a coating process can be carried out in one or more areas (also referred to as coating areas) of the inline system during the transport of the substrate through the inline system.

[0005] One application area for such vacuum-based coating processes is the coating of thermally sensitive 3D substrates with thick metallic layers using magnetron sputtering. The resulting coating is suitable for a variety of applications. For example, the deposition of relatively thick metallic layers on 3D substrates is a possibility for the production of radar antennas for automotive applications.

[0006] According to various embodiments, it has been recognized that the coating of thermally sensitive substrates is subject to a dilemma that becomes more significant as the ratio of the volume of the coating to be deposited on the substrate (which is a function of the layer thickness) and the volume of the substrate (more generally, its heat capacity) increases. In particular, the thermal load on the substrate increases with increasing layer thickness. Thermal energy is introduced into the substrate during the coating process, causing its temperature to continually rise during coating. In this regard, it has been recognized that the increase in the temperature of the substrate during coating increases, to a first approximation, with the layer thickness, and only to a second approximation with the rate of the coating process at which the substrate is coated.Thus, this increase in substrate temperature during coating can be inhibited by reducing the coating rate, but only to a limited extent. Furthermore, coating should be as efficient as possible, for example, by coating as many substrates as possible at one time. One established approach to this is to increase the coating rate at which the substrate is coated, so that more material is deposited on the substrate per unit time. However, thermal energy is introduced into the substrate during the coating process, causing it to heat up continuously during the coating process.

[0007] For example, in the above-mentioned application area, magnetron sputtering (or, analogously, evaporation using an electron beam and / or a thermoelectric heater) is often used to coat the substrate. This (physically determined) imparts a comparatively large amount of thermal energy (also referred to as heat) to the substrate per area and per layer thickness (also referred to as heat input). This heat input is based on condensation heat, kinetic energy of the sputtered particles, bombardment of the substrate with electrons and ions, recombination heat of ionized particles, and other components of the coating plasma, such as electromagnetic radiation and / or photon bombardment. The greater the specified layer thickness to be deposited, the greater the heat input into the substrate.This heat input leads to a comparatively large increase in the temperature of the substrate during coating, given an invariant heat capacity of the substrate.

[0008] On the other hand, the quality of the coating process result should be as high as possible, which hinders excessive heating of the substrate, as this promotes substrate damage. However, especially in a vacuum, the ability to extract thermal energy from the substrate is limited (e.g., to pure thermal radiation). This places an upper limit on the rate of the coating process and, in particular, on the thickness of the depositable layers that can be coated on the substrate, as a function of the substrate's thermal sensitivity. This represents an obstacle to the most efficient deposition of thick layers, in particular.

[0009] Therefore, a trade-off must be made between the quality and efficiency (and thus the cost) of coating.

[0010] Against this backdrop, various embodiments provide a convection cooling device, a cooling chamber, and a process arrangement that facilitate the extraction of thermal energy from the substrate (also referred to as cooling the substrate). It has been clearly recognized that the established limitation of cooling substrates in a vacuum to thermal radiation can be overcome, so that convection can also be used for cooling substrates. Clearly, the rate at which thermal energy can be extracted from the substrate by means of convection can be greatly increased, particularly with increasing convection mass flow passing through the substrate.

[0011] More specifically, the convection cooling device, the cooling chamber, and the process arrangement provide a design and aspects thereof that facilitate the cooling of substrates, for example, despite high requirements for the purity of the vacuum in which the substrate is coated and / or despite a high cycle rate (which reduces cycle time and thus increases productivity) at which the substrates are coated. Illustratively, the design makes it possible to increase the mass flow of gas (also referred to as cooling gas) passing through the substrate while spatially confining the cooling gas spread, thus inhibiting disturbance to adjacent vacuum conditions.

[0012] According to various embodiments, the development of a highly productive and cost-effective coating process and a corresponding system concept for the deposition of thick metallic layers on 3D plastic or 3D plastic / compound substrates using magnetron sputtering is facilitated. According to various embodiments, the length of the process arrangement can be shortened by several tens of meters, depending on the coating system. This puts the process arrangement within a more acceptable range in terms of price and geometry. This applies analogously to any type of temperature-sensitive substrate or layer system, for example, plate-shaped, ribbon-shaped, and / or having a different geometry, for example, made of glass, metal, and / or plastic.

[0013] It shows

[0014] Figures 1 A and 1 B each show a convection cooling device according to various embodiments in a schematic side view or cross-sectional view;

[0015] Figure 2A shows the operation of the convection cooling device according to various embodiments in a schematic flow diagram;

[0016] Figure 2B shows a pair of convection cooling devices according to various embodiments in a schematic side view or cross-sectional view;

[0017] Figure 3 shows the operation of the pair of convection cooling devices according to various embodiments in a schematic perspective view;

[0018] Figures 4A and 4B each show a cooling chamber according to various embodiments in a schematic side view or cross-sectional view;

[0019] Figure 5A and Figure 5B each show a cooling chamber according to various embodiments in a schematic side view or cross-sectional view;

[0020] Figure 6 shows the temperature of a substrate over time in a schematic diagram;

[0021] Figure 7, Figure 8 and Figure 9 each show a process arrangement in a schematic layout diagram and detailed views thereof according to various embodiments;

[0022] Figure 10 shows a convection cooling device according to various embodiments in a schematic side view or cross-sectional view;

[0023] Figures 11 and 12 each show a process arrangement according to various embodiments in a schematic side view or cross-sectional view;

[0024] Figures 13 and 14 each show a convection cooling device according to various embodiments in different views and diagrams.

[0025] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0026] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection (e.g., resistive and / or electrically conductive, e.g., an electrically conductive connection), a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0027] According to various embodiments, the term "coupled" or "coupling" can be understood in the sense of a (e.g. mechanical, hydrostatic, thermal and / or electrical), e.g. direct or indirect, connection and / or interaction. Several elements can, for example, be coupled to one another along an interaction chain, along which the interaction can be exchanged, e.g. a fluid (then also referred to as fluidically coupled). For example, two coupled elements can exchange an effect with one another (also referred to as interaction), e.g. a mechanical, hydrostatic, thermal and / or electrical effect. A coupling of several vacuum components (e.g. valves, pumps, chambers, etc.) to one another can have them fluidically coupled to one another. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g. physical orA coupling can be understood as a physical coupling, e.g., through direct physical contact. A coupling can be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

[0028] The actual state of an entity (e.g., a device, a system, or a process) can be understood as the actual or sensorily detectable state of the entity. The desired state of the entity can be understood as the desired state, i.e., a specification. Control can be understood as an intentional influencing of the current state (also referred to as the actual state) of the entity. The current state can be changed according to the specification (also referred to as the desired state), e.g., by changing one or more operating parameters (then also referred to as manipulated variables) of the entity, e.g., by means of an actuator. Regulation can be understood as controlling, whereby a change in state is additionally counteracted by disturbances. For this purpose, the actual state is compared with the desired state, and the entity is influenced in such a way, e.g.,by means of an actuator so that the deviation of the actual state from the desired state is minimized. In contrast to pure forward-directed sequence control, the control thus implements a continuous influence of the output variable on the input variable, which is brought about by the so-called control loop (also referred to as feedback). In other words, this can be understood to mean that, alternatively or in addition to the control (or activation), a control process can be used, or alternatively or in addition to the control, a regulation process can be carried out. The state of a controllable device (e.g. a transport device) or a controllable process (e.g. the supply of gas) can be specified as a point (also referred to as the working point or operating point) in a space (also referred to as the state space) which is spanned by the variable parameters of the device or process (also referred to as the operating parameters).The state of the device or process is thus a function of the respective value of one or more operating parameters, which thus represents the state of the device or process. The actual state can be determined based on a measurement (e.g., using a measuring element) of one or more operating parameters (then also referred to as a controlled variable).

[0029] According to various embodiments, a vacuum chamber can be provided by means of a chamber housing in which one or more vacuum chambers can be provided. The chamber housing can be coupled, for example, to a pump arrangement, e.g., a vacuum pump arrangement, (e.g., in a gas-conducting manner) to provide a negative pressure or a vacuum (vacuum chamber housing) and can be designed to be stable enough to withstand the effects of air pressure in the pumped-out state. The pump arrangement (comprising at least one vacuum pump, e.g., a high-vacuum pump, e.g., a turbomolecular pump) can make it possible to pump out part of the gas from the interior of the vacuum chamber, e.g., from the coating region and / or cooling region.

[0030] In this regard, it can be understood that one or more than one of the functional units explained herein (e.g., a lock) is represented by a vacuum chamber (e.g., lock chamber) that provides the function of the functional unit. In this regard, it can be understood that, at least in some embodiments, the functional unit can optionally be provided by a group of several vacuum chambers arranged one behind the other. For example, in at least some embodiments, a lock chamber explained herein can be understood as representing a lock as a functional unit, which in some embodiments has several lock chambers arranged one behind the other that implement the functional unit.The multiple lock chambers can exchange substrates with each other at a pressure that lies between the pressure at the inlet side of the lock and the pressure at the outlet side. For example, a lock can have a pre-vacuum lock chamber and, adjacent to it, a high-vacuum lock chamber.

[0031] According to various embodiments, a chamber housing, e.g. a vacuum chamber provided therein, may be configured such that a negative pressure (i.e. a pressure less than atmospheric pressure) may be provided therein, e.g. a vacuum (i.e. a pressure of less than 0.3 bar), e.g. a pressure in a range of approximately 10 mbar to approximately 1 mbar (in other words rough vacuum) or less, e.g. a pressure in a range of approximately 1 mbar to approximately 10 3mbar (in other words fine vacuum) or less, e.g. a pressure in a range of approximately 10 3 mbar to approximately 10 7 mbar (in other words high vacuum) or less, e.g. a pressure less than high vacuum, e.g. less than about 10 7 mbar. Atmospheric pressure (e.g., 1 bar) can be the pressure acting on the chamber housing from the outside.

[0032] Reference is made herein to various vacuum chambers which are configured by means of a functional device according to a predetermined function, wherein the functional device is configured to exert an effect according to the function on the interior of the vacuum chamber (also referred to as the chamber interior or chamber interior). Examples of the functional device include: a coating device, a transport interface, a cooling device, a heating device, etc. For example, a vacuum chamber can be configured as a coating chamber by means of one or more coating devices which is configured to emit a coating material into the interior of the vacuum chamber. For example, a vacuum chamber can be configured as a cooling chamber by means of a cooling device which is configured to extract thermal energy from the interior of the vacuum chamber (or at least a region thereof).

[0033] A cooling device can be configured to extract thermal energy from a region (also referred to as a cooling region) by means of convection (also referred to as a convection cooling device). Convection can be understood as heat transfer by means of the transport of mass (e.g. a fluid, e.g. gas), i.e. a mass flow which carries the thermal energy. For example, the convection can be provided by means of a cooling gas which is emitted by the cooling device and optionally taken up again. For example, the convection can be provided in a cooling region such that thermal energy is extracted from the cooling region or at least from a body arranged therein or adjacent thereto (e.g. substrate). In some embodiments, the cooling gas can circulate along a closed path which runs through the cooling region (also referred to as a circuit).Alternatively or additionally, the cooling gas supplied to the cooling zone may originate from a finite reservoir (also referred to as a gas reservoir or cooling gas source), e.g., a gas tank. In some embodiments, the cooling gas may be cooled before being supplied to the cooling zone, e.g., by passing it through a heat exchanger configured to extract thermal energy from the cooling gas.

[0034] A convection source can be understood as a device configured to stimulate convection, for example, by inducing a flow of the cooling gas through the cooling region, e.g., by means of a pressure difference. Exemplary components of the convection source include: a pressure accumulator; a pump (e.g., a vacuum pump); and a fan. The pressure accumulator can contain the cooling gas under excess pressure. For example, the gas reservoir can provide the pressure accumulator in which the cooling gas is provided under excess pressure.

[0035] A vacuum chamber configured as a cooling chamber can optionally have two substrate transfer valves (also referred to simply as chamber valves) between which the cooling chamber and / or the cooling device are arranged. The two substrate transfer valves inhibit gas exchange between the cooling chamber and a vacuum chamber adjacent to the cooling chamber, thus increasing the gas pressure range in the cooling area. For example, the rate at which thermal energy is extracted from the cooling area or a substrate within it can increase with increasing gas pressure in the cooling area.

[0036] According to various embodiments, the term "lamella" (also referred to as rib or fin) can be understood as a structural surface element which, for example, has a thin and / or flat shape. The lamella can, for example, be plate-shaped (e.g., having a rectangular or trapezoidal cross-section), e.g., cuboid-shaped and / or wave-shaped. Several lamellae arranged one behind the other are also referred to as fans. According to various embodiments, the lamella can be provided as a hollow body, i.e., as a body which has one or more than one cavity, for example, by being penetrated by one (e.g., slit-shaped) or more than one (e.g., round) through-opening. According to various embodiments, the lamella can be monolithic or multi-part. According to various embodiments, the lamella provided as a hollow body can have several wall elements (e.g., sheets) which delimit the cavity.

[0037] Reference is made herein to a transport path and the transport surface running along the transport path, which are provided by means of a plurality of rollers (also referred to as transport rollers) that are adjacent to the transport surface. The transport surface can, for example, run along the transport path and / or the transport direction. In some embodiments, the plurality of transport rollers provide a transport device, e.g. in the context of a vacuum chamber. In this regard, it can be understood that a plurality of transport rollers arranged one behind the other (e.g. across a plurality of vacuum chambers) can be coupled to one another in such a way that they can exchange kinetic energy (e.g. when coupled to one another) and / or material (e.g. substrates) with one another, so that they form a transport assembly (also referred to as a transport device).In other words, each transport device can have several transport rollers which are adjacent to the transport surface.

[0038] Optionally, the transport device can comprise one or more substrate carriers, which are transported by means of the transport rollers while resting on them. The substrate carrier can comprise one or more recesses (also referred to as substrate receiving pockets), each recess being configured to receive a substrate.

[0039] The transporting (also referred to as transport process) of one or more than one object (also referred to as transport object), e.g. substrate (then also referred to as substrate transport) or substrate carrier, can be carried out according to one of various modes, of which a first mode is also referred to as single transport and a second mode is also referred to as group transport.

[0040] According to group transport, one or more than one transport object (e.g. substrate or substrate carrier) is transported as part of a series of transport objects arranged one behind the other (also referred to as an object train), for example substantially at the speed of the object train and / or at a time-invariant distance from an immediately adjacent transport object (e.g. substrate or substrate carrier) of the object train. For example, the speed at which the transport objects of the object train are transported (also referred to as transport speed) is linked to one another, e.g. electrically and / or mechanically. For example, several substrates arranged one behind the other in a row (also referred to as a substrate train) are transported together, for example substantially at the same speed and / or at the same distance from one another.An exemplary implementation of group transport is achieved by means of several transport rollers arranged one behind the other (also referred to as a group transport device), each of which is driven according to the same group transport specification (e.g., target rotational speed or target speed of the object pull). For example, the transport rollers can be coupled to the same drive train, which links the rotational movement of the transport rollers.

[0041] In single-transit transport, a transport object is transported individually, for example, toward or away from an object train. During single-transit transport, the speed of the transport object and / or the distance of the transport object from an immediately adjacent transport object can vary over time. For example, the single-transit transport can be configured to accelerate the transport object to the target speed of the object train and / or to decelerate it from the target speed of the object train.

[0042] An exemplary implementation for transferring the individual transport and the group transport into each other is carried out using two drive trains, a first drive train driving the transport rollers of the group transport device, and a second drive train driving the transport rollers of a transport device adjacent to the group transport device (also referred to as an individual transport device). The two drive trains can be controlled independently of each other. The individual transport device and the group transport device can continue each other, i.e., provide a common transport surface.

[0043] For example, the individual transport device and the group transport device can be adjacent to one another (also referred to as a transport interface) (e.g., in a vacuum chamber then configured as a transfer chamber) so that these substrates can be exchanged with one another. A transfer chamber can be understood here as a vacuum chamber in which an individual transport device and a group transport device are adjacent to one another, so that the individual transport device and the group transport device can be transferred into one another within the transfer chamber.

[0044] In general, it can be understood that group transport allows for particularly effective processing of substrates. However, group transport can be a hindrance to transferring a substrate between areas of different pressure, especially if the transfer is to take place over a short distance and / or within a short period of time. To transfer a substrate between areas of different pressure particularly efficiently, this can be done in a so-called lock chamber. Each lock chamber has two substrate transfer valves so that their interiors can be individually evacuated and / or ventilated, although this interrupts the substrate transport. Therefore, individual transport is preferably carried out in the lock chamber.

[0045] A substrate transfer valve is understood to be a chamber valve (e.g., a flap valve or slide valve) that is configured to influence (e.g., inhibit or release) the gas exchange through a chamber opening (also referred to as the substrate transfer opening) through which the transport surface passes. The substrate transfer valve can, when placed in a first state, block the transport surface (e.g., covering the substrate transfer opening in the vacuum chamber, e.g., sealing it), and, when placed in a second state, be arranged next to the transport surface.

[0046] According to various embodiments, the substrate may comprise or be formed from at least one of the following: a ceramic, a glass, a semiconductor (e.g., amorphous, polycrystalline, or single-crystalline semiconductor such as silicon), a metal, and / or a polymer (e.g., plastic). According to various embodiments, the substrate may consist of or comprise a polymer, for example, if the substrate comprises a composite material (also referred to as a compound) that comprises or consists of the polymer. Alternatively or additionally, the substrate may have an uneven side (also referred to as a coating side) that is coated (also referred to as a 3D substrate). For example, the coating side of the 3D substrate may be structured and / or comprise a plurality of interconnected trenches (also referred to as a 3D structure).

[0047] According to various embodiments, the 3D substrate can be configured as a hollow body, serving as an antenna precursor. The antenna precursor can, for example, comprise a plurality of interconnected trenches, which are lined with a metal (e.g., copper) by means of the coating process.

[0048] According to various embodiments, processing (also referred to as treating) a substrate may comprise at least one of the following: cleaning the substrate, coating the substrate, irradiating (e.g., using light, UV light, particles, electrons, ions, etc.) the substrate, modifying the surface of the substrate, drying the substrate, heating the substrate, etching the substrate, and glowing the substrate.

[0049] With regard to the layer-forming process (also referred to as the coating process), reference is made here as an example to sputtering. The term "sputtering" refers to the atomization of a material (also referred to as coating material or target material) using a plasma. The atomized components of the coating material (e.g., individual atoms and / or ions) are separated from one another and can, for example, be deposited elsewhere to form a layer. Sputtering can be carried out using a sputtering device, which can have one or more magnet systems (also referred to as a magnetron). The coating material can be provided by means of a sputtering target (also referred to as a target for short), which can, for example, be tubular (also referred to as a tubular target) or plate-shaped (also referred to as a plate target or planar target).To generate the plasma, a voltage (also called sputtering voltage) can be applied to the sputtering target (also referred to as the target for short), so that the sputtering target acts as a cathode. Even if the sputtering voltage is an alternating voltage, the term "cathode" is often retained.

[0050] For sputtering, the sputtering target can be arranged in a vacuum processing chamber (also referred to simply as a processing chamber, e.g., a coating chamber type), allowing sputtering to take place in a vacuum. For this purpose, the ambient conditions (the process parameters) within the vacuum processing chamber (e.g., process pressure, temperature, gas composition, etc.) can be adjusted or regulated during sputtering. For example, a working gas, which serves as the plasma-forming gas or plasma-forming gas mixture, can be provided within the vacuum processing chamber.The vacuum processing chamber can, for example, be or become airtight, dusttight, and / or vacuum-tight, so that a gas atmosphere with a predefined composition (also referred to as working atmosphere) or a predefined pressure (also referred to as working pressure or process pressure) can be provided within the vacuum processing chamber (e.g., according to a setpoint). The vacuum chamber can be configured such that a vacuum (i.e., a pressure less than 0.3 bar) and / or a pressure in a range from approximately 1 mbar to approximately 10 mbar can be maintained therein. 3 mbar (in other words fine vacuum) or less, e.g. a pressure in a range of approximately 10 3 mbar to approximately 10 7 mbar (in other words high vacuum) or less, e.g. a pressure of less than high vacuum, e.g. less than approximately 10 7mbar (in other words, ultra-high vacuum). The lowest pressure achievable in the vacuum chamber is also referred to as the residual vacuum. It should be understood that what is described herein for sputtering can apply analogously to any other coating process, e.g., physical vapor deposition. In general, physical vapor deposition (e.g., sputtering and / or evaporation) involves transferring the chemical composition of the target or coating material into the layer to be formed.

[0051] A sputtering device can be configured to atomize the coating material using a plasma (also referred to as sputtering). A thermal evaporation device can be configured to evaporate the coating material using thermal energy, which can be generated, for example, by means of an electron beam and / or a thermoelectric heater. Depending on the nature of the coating material, sublimation, i.e., thermal conversion of a liquid state (liquid phase) into a gaseous state (gaseous phase), can also occur as an alternative or in addition to thermal evaporation, i.e., thermal conversion of a solid state (solid phase) into a gaseous state. In other words, evaporation can also involve sublimation of the coating material.What is described herein for sputtering and / or evaporation may apply analogously to any other type of physical vapor deposition (PVD) and / or chemical vapor deposition (CVD).

[0052] The term "inline" refers herein to a configuration (also referred to as inline configuration) in which a stream of substrates is transported along an elongated (e.g. straight) transport path through a vacuum, from which substrates supplied to the transport path are introduced into the vacuum and from which substrates removed from the transport path are removed from the vacuum (e.g. simultaneously with the introduction). Thus, a continuous stream of substrates through the vacuum is provided without having to break the vacuum. According to various embodiments, the processing (e.g. coating) of the substrate takes place according to the inline configuration, so that the substrates are transported along the transport path through one or more coating areas (e.g. according to group transport), in which the coating of the substrate takes place in the vacuum. Analogously, the process arrangement (e.g.a system) in an inline configuration, so that it has two opposite end-side lock chambers, of which one lock chamber introduces substrates into the vacuum and (e.g. simultaneously) the other lock chamber removes substrates from the vacuum.

[0053] The term "drive device" refers to a device configured to generate a movement, for example based on potential (e.g., electrical and / or hydrostatic) energy, and to output the movement (e.g., to transmit it to an object). The drive device may, for example, comprise an electromechanical converter (e.g., a motor) or a hydrostatic-mechanical converter (e.g., a reciprocating piston).

[0054] Various examples are described below, relating to aspects disclosed herein and what is illustrated in the figures. These examples generally contribute to facilitating cooling of the substrate, e.g., accelerating it, and / or without promoting spatial expansion of the cooling gas (e.g., into a vacuum), thus inhibiting interference with adjacent vacuum conditions.

[0055] Example 1 is a convection cooling device, preferably comprising: a cooling area and a gas supply line (illustratively a feed); optionally several (e.g.along a row of slats arranged one behind the other), each slat having a first cavity and one or more than one gas outlet adjacent to the cooling region, which opens into the first cavity (also referred to as gas supply chamber), optionally a plurality of second cavities adjacent to the cooling region (also referred to as gas discharge chambers), wherein the plurality of slats are preferably spatially separated from one another, so that one of the plurality of second cavities is formed between two immediately adjacent slats; wherein the one gas supply line (illustratively a feed) is preferably coupled to the cooling region by means of the plurality of gas outlets and / or by means of the first cavity of each slat in order to supply a gas (also referred to as cooling gas) to the cooling region by means of the slat; optionally a gas discharge line which is coupled to the cooling region by means of the plurality of second cavities in order to extract gas from the cooling region.

[0056] Example 2 is the convection cooling device according to Example 1, further comprising: a convection source configured to provide convection from the gas supply line to the gas discharge line (e.g., through the cooling region) by means of the cooling gas and / or to generate at least a pressure difference between the gas supply line and the gas discharge line, e.g., of more than 1 mbar (e.g., 10 mbar, e.g., 100 mbar, e.g., 1 bar, e.g., 10 bar, e.g., 100 bar). This further promotes trouble-free convection.

[0057] Example 3 is the convection cooling device according to Example 1 or 2, wherein each fin has a pair of (preferably plate-shaped) wall elements between which the first cavity of the fin is formed. This further promotes uninterrupted convection.

[0058] Example 4 is the convection cooling device according to example 1 or 3, wherein each wall element of the pair of wall elements separates the first cavity from one of the second cavities. This further promotes uninterrupted convection.

[0059] Example 5 is the convection cooling device according to Example 1 or 4, wherein each wall element of the pair of wall elements is adjacent to the first cavity of the fin and / or to one of the second cavities.

[0060] Example 6 is the convection cooling device according to any one of Examples 1 to 5, wherein the plurality of fins comprises at least 4 fins, e.g., at least 10 fins, e.g., at least 20 fins. This further promotes trouble-free convection.

[0061] Example 7 is the convection cooling device according to any one of Examples 1 to 6, wherein each fin of the plurality of fins is elongated toward the cooling region.

[0062] Example 8 is the convection cooling device according to any one of Examples 1 to 7, wherein the gas outlet is directed toward the cooling region.

[0063] Example 9 is the convection cooling device according to any one of Examples 1 to 8, wherein the first cavity of each fin is elongated toward the cooling region.

[0064] Example 10 is the convection cooling device according to any one of Examples 1 to 9, wherein each fin is penetrated by an opening (also referred to as a through-opening, e.g., forming a passage) (e.g., along a direction toward the cooling region), which provides the first cavity and the gas outlet. Example 11 is the convection cooling device according to any one of Examples 1 to 10, further comprising: a hood, in the interior of which the plurality of fins and / or the cooling space are arranged.

[0065] Example 12 is the convection cooling device according to any one of Examples 1 to 11, wherein the plurality of fins (and, for example, their wall elements) are arranged one behind the other in the row along a direction, wherein an extension of the first cavity along the direction deviates by less than 50% (e.g., 20%, e.g., 10%) from an extension of the second cavity along the direction. This further promotes trouble-free convection.

[0066] Example 13 is a cooling chamber (e.g. in inline configuration), comprising: a vacuum chamber; a plurality of transport rollers (e.g. as part of a transport device) for transporting a substrate along a transport surface in the vacuum chamber; a housing device which is configured to be brought into a plurality of different states (e.g. into each of them, wherein the current one is also referred to as the actual state), of which a first state provides a cooling space enclosed by the housing device, which is delimited by the transport surface, and a second state at least partially defines the cooling space (e.g. along the transport surface, e.g.in and / or opposite to the transport direction) exposed (and / or providing a greater distance of the housing device from the transport surface than the first state); a convection cooling device which has one or more than one gas outlet which is configured to supply gas to the cooling space; wherein the convection cooling device is preferably configured according to one of examples 1 to 12. Preferably, a ratio of the volume of the cooling space enclosed by the housing device (in the first state) to the volume of the interior of the vacuum chamber can be less than approximately 0.2, e.g., 0.1, e.g., 0.05, e.g., 0.01. This promotes a rapid cooling process, since the cooling space can be quickly evacuated. Preferably, the housing device (e.g., each housing part thereof) can have a cooling surface adjacent to the cooling space (e.g.,a cooling device) which can, for example, be configured to extract thermal energy from the cooling space (e.g., by means of a heat exchanger and / or liquid nitrogen). For example, one or more housing parts of the housing device can be or are cooled by means of the heat exchanger (e.g., by means of liquid nitrogen), for example if the heat exchanger is integrated into the housing device. For example, the cooling surface can be or are cooled to a temperature below 0°C during operation. Alternatively or in addition to liquid nitrogen, any other liquid cooling medium can, of course, be used.

[0067] Example 14 is the cooling chamber according to Example 13, further comprising: a drive device which is configured to drive a movement (e.g. translation) of the housing device (or one or more housing parts thereof) in order to bring the housing device into the first state or to bring it into the second state (thereby inducing a change in the actual state of the housing device, ie a change in state thereof), wherein the movement is directed towards or away from the transport surface.

[0068] Example 15 is the cooling chamber according to example 13 or 14, further comprising: an actuating device (e.g. comprising an actuator and / or control device) which is configured (e.g. to be controlled in response thereto) to link two or more of the following actual states with one another: an actual state of the convection cooling device (which, for example, influences a mass flow of the gas supplied to the cooling chamber); to link an actual state of the plurality of states of the housing device with one another; an actual state of the plurality of transport rollers (e.g. their actual rotational speed).

[0069] Example 16 is the cooling chamber according to any one of Examples 13 to 15, wherein the housing device comprises a plurality of housing parts between which the transport surface is arranged, wherein the plurality of states differ from each other in a position of the plurality of housing parts relative to each other.

[0070] Example 17 is the cooling chamber according to any one of Examples 13 to 16, wherein the housing device (eg, the plurality of housing parts) comprises a first (eg, hood-shaped) housing part in the interior of which the cooling space is provided, wherein the plurality of states differ from each other in a position of the first housing part relative to the transport surface.

[0071] Example 18 is the cooling chamber according to any one of Examples 13 to 17, wherein the housing device (e.g. the plurality of housing parts) has a second (e.g. plate-shaped) housing part (wherein, for example, the transport surface is arranged between the first and the second housing part), which is configured, for example, to rest on the first housing part and / or a substrate carrier transported along the transport surface in the first state, and / or where the plurality of states differ from one another, for example, in a position of the second housing part relative to the transport surface.

[0072] Example 19 is the cooling chamber according to any one of examples 13 to 18, wherein the housing device (eg, the plurality of housing parts) comprises a third housing part, which is preferably configured as a substrate carrier, and is movably mounted along the transport path by means of the plurality of transport rollers (eg, the transport device), and / or wherein the plurality of states differ from one another in a position of the third housing part relative to the first housing part.

[0073] Example 20 a process arrangement (e.g. in inline configuration) comprising the process arrangement: a plurality of vacuum chambers (arranged one behind the other along a transport direction), of which: at least two (i.e. two or more than two) first vacuum chambers are configured as a lock chamber or coating chamber; a second vacuum chamber arranged between the two first vacuum chambers and acting as a cooling chamber by means of a convection cooling device; a plurality of transport rollers (e.g. as part of a transport device) for transporting a substrate along a transport surface through the plurality of vacuum chambers; the convection cooling device, which has one or more than one (e.g. a plurality of) gas outlets directed towards the transport surface in the second vacuum chamber for supplying gas to the transport surface; wherein the cooling chamber is preferably configured according to one of examples 13 to 19.

[0074] Example 21 the process arrangement according to Example 20, wherein the plurality of vacuum chambers comprise two third vacuum chambers which are configured as transfer chambers and between which the two first vacuum chambers are arranged.

[0075] Example 22 the process arrangement according to example 20 or 21, wherein the plurality of transport rollers (e.g. the transport device) is configured to transfer the transporting between individual transport and group transport in each of the two third vacuum chambers. Example 23 the process arrangement according to one of examples 20 to 22, wherein each of the at least two lock chambers has: a substrate transfer valve opposite the second vacuum chamber, which, for example, borders on a vacuum chamber of the plurality of vacuum chambers (e.g., a chamber interior thereof); and / or a substrate transfer valve facing the second vacuum chamber, which, for example, borders on a chamber interior of the second vacuum chamber.

[0076] Example 24 is the process arrangement according to any one of examples 20 to 23, further comprising a plurality of vacuum chambers: two fourth vacuum chambers, of which: each vacuum chamber is configured as an additional lock chamber and between which the at least two first vacuum chambers and / or the second vacuum chamber are arranged, and / or each fourth vacuum chamber has a substrate transfer valve arranged opposite the two first vacuum chambers and / or the second vacuum chamber, which is exposed, for example, to the earth's atmosphere.

[0077] Example 25 is the process arrangement according to any one of examples 20 to 24, further comprising: a transfer system configured to transfer a substrate carrier (e.g., the transport device) between the two fourth vacuum chambers along a transfer path arranged adjacent to the plurality of vacuum chambers.

[0078] Example 26 is the process arrangement according to any one of examples 20 to 25, further comprising a plurality of vacuum chambers: a fifth vacuum chamber, which is arranged between the second vacuum chamber and one of the two first vacuum chambers (if this is configured, for example, as a coating chamber or lock chamber) (e.g., behind the second vacuum chamber in the transport direction), wherein the fifth vacuum chamber is configured for pretreatment (then also referred to as a pretreatment chamber) by means of a pretreatment device (e.g., comprising a plasma source, a heat radiation source, and / or a glow device). This achieves the activation of the surface after cooling and thus improves the processing. Preferably, the fifth vacuum chamber is immediately adjacent to the second vacuum chamber or the first vacuum chamber (e.g., if this is a lock chamber).

[0079] Example 27 is the process arrangement according to any one of examples 20 to 26, further comprising: a drive device for driving the plurality of transport rollers (e.g., as part of the transport device), preferably according to a plurality of operating modes, of which a first operating mode is configured to provide transport into and / or out of the second vacuum chamber, and a second operating mode (also referred to as pendulum mode) is configured such that the transport within the second vacuum chamber takes place in an oscillating manner (also referred to as oscillating movement or oscillating transport). The oscillating transport can comprise reversing the direction of transport several times (e.g., more than 10 times), for example cyclically. This homogenizes the cooling effect.

[0080] Example 28 is the process arrangement according to any one of Examples 20 to 27, wherein the drive device is configured to perform the driving such that a substrate within the second vacuum chamber is set into a pendulum motion by means of the plurality of transport rollers. This homogenizes the cooling effect. Example 29 is any one of Examples 1 to 28, wherein the at least two (i.e., two or more than two) first vacuum chambers comprise a group of vacuum chambers (which is arranged, for example, between two fourth vacuum chambers and / or between two coating chambers), which comprises:

[0081] - at least one (ie one or more than one) vacuum chamber (e.g. several vacuum chambers arranged one behind the other), which are arranged as a lock chamber (also referred to as an internal discharge chamber), and / or

[0082] - at least one (ie one or more than one) vacuum chamber (e.g. several vacuum chambers arranged one behind the other) which are configured as a lock chamber (also referred to as an internal infeed chamber), wherein one or more than one vacuum chamber of the plurality of vacuum chambers configured as a cooling chamber is arranged between the at least one internal infeed chamber (e.g. adjacent thereto) and the at least one internal outfeed chamber (e.g. adjacent thereto).

[0083] Example 30 is one of Examples 1 to 29, further configured according to any of the embodiments explained below.

[0084] Example 31 is any one of Examples 1 to 30, wherein each of the plurality of transport rollers is configured as a stub roller.

[0085] Example 32 is one of Examples 1 to 31, further comprising: a (e.g., plate-shaped) substrate carrier, by means of which the transporting takes place, wherein the substrate carrier has a plurality of recesses (also referred to as substrate receiving pockets), of which, for example, each substrate receiving pocket is configured to receive a substrate or at least adjoins a substrate support surface; wherein the plurality of substrate receiving pockets of the substrate carrier and the gas outlets of the convection cooling device are linked to one another in one or more geometric properties (e.g., they coincide). This enlarges the installation space for the second cavities and thus facilitates the removal of the gas. Illustratively, the space for returning the gas is enlarged.

[0086] Example 33 is configured according to Example 32, wherein the one or more geometric properties comprise a geometric grid and / or an extent (e.g., in the transport direction or at least along the transport surface).

[0087] Example 34 is configured according to example 32 or 33, wherein the convection cooling device comprises a gas outlet (e.g., provided by a bell) for each substrate receiving pocket of the substrate carrier, and / or wherein the plurality of substrate receiving pockets comprise a plurality of adjacent rows of consecutively arranged substrate receiving pockets, and the convection cooling device comprises a gas outlet (e.g., a gap-shaped one) per row. This increases the installation space for the second cavities and thus facilitates the removal of the gas.

[0088] Example 35 is configured according to any one of examples 32 or 34, wherein the plurality of substrate receiving pockets are spatially distributed according to a grid, and wherein preferably the gas outlets (e.g., the gas outlet of each lamella) are spatially arranged according to the grid (e.g., according to the same grid dimension). This achieves that each gas outlet is directed towards one or more than one substrate receiving pocket. Example 36 is configured according to any one of examples 32 or 35, wherein each of the plurality of recesses has a first extent in one direction (e.g., in the transport direction and / or along the transport surface), and wherein each of the gas outlets (e.g., the gas outlet of each lamella) has a second extent in the direction that deviates by less than approximately 50% (e.g., 25%, e.g., 10%, e.g., 5%) from the first extent. This increases the installation space for the second cavities and thus facilitates the removal of the gas.

[0089] Example 37 is configured according to any one of examples 1 or 36, an actuator configured to influence a mass flow of the gas supplied to the convection cooling device (e.g., which is part of the pair of convection cooling devices), e.g., to be controlled in response thereto.

[0090] Example 38 is configured according to Example 37, wherein the actuator is configured to influence a ratio according to which the mass flow is distributed between the pair of convection cooling devices. This clearly achieves that the back pressure caused by convection from below and / or above onto a substrate can be adjusted, e.g., such that the substrate is not lifted by the convection.

[0091] Example 39 is a convection cooling device (e.g., the convection cooling device in any one of Examples 1 to 37), the convection cooling device comprising: a plurality (e.g.,gas outlets arranged one behind the other along a row, each gas outlet being adjacent to the cooling region; a gas distributor housing having a cavity (also referred to as gas distribution space) which couples the gas outlets to one another in a gas-conducting manner, the gas outlets preferably being arranged between the cooling region and the cavity; a gas supply line which opens into a first section (also referred to as inlet section) of the cavity and is coupled to the cooling region in a gas-conducting manner by means of the gas outlets in order to supply gas to the cooling region by means of the gas outlets; a first gas distribution structure which is arranged between the first section and the gas outlets in the cavity and is penetrated by a first plurality of channels, each channel opening into the first section.

[0092] Example 40 is configured according to any one of Examples 1 to 39, further comprising a second gas distribution structure disposed between the first gas distribution structure and the gas outlets in the cavity and penetrated by a second plurality of channels, each channel opening into a second portion of the cavity adjacent to the first gas distribution structure.

[0093] Example 41 is configured according to any one of examples 1 to 40, wherein the second gas distribution structure is penetrated by more channels than the first gas distribution structure; and / or wherein the first gas distribution structure spatially separates the first section and the second section from each other.

[0094] Example 42 is configured according to any one of Examples 1 to 41, wherein the first gas distribution structure and / or the second first gas distribution structure comprise a wall (e.g., plate) penetrated by the channels.

[0095] Example 43 is configured according to any one of Examples 1 to 42, wherein the first gas distribution structure and / or the second first gas distribution structure are penetrated by the channels along the same direction. Example 44 is configured according to any one of Examples 1 to 43, wherein the housing tapers in a direction (e.g., the) away from the gas outlets and / or toward the gas supply line.

[0096] Example 45 is configured according to any one of Examples 1 to 44, wherein each gas outlet is provided by a lamella, each lamella having a first cavity and the gas outlet adjacent to the cooling region, which opens into the first cavity.

[0097] Example 46 is configured according to any one of examples 1 to 45, wherein the gas supply line opens into the first portion of the cavity along a direction toward the gas outlets.

[0098] Example 47 is configured according to any one of examples 1 to 46, further comprising: a plurality of second cavities adjacent to the cooling region, wherein the plurality of slats are spatially separated from one another such that one of the plurality of second cavities is formed between two immediately adjacent slats; a gas supply line coupled to the cooling region by means of the first cavity of each slat in order to supply gas to the cooling region by means of the slat; a gas discharge line coupled to the cooling region by means of the plurality of second cavities in order to extract gas from the cooling region.

[0099] Example 48 is configured according to any one of Examples 1 to 47, further comprising: a convection source configured to generate a pressure difference between the gas supply line and the gas discharge line.

[0100] Example 49 is configured according to any one of Examples 1 to 48, wherein the gas distribution structure and / or the additional gas distribution structure are arranged closer to the gas outlets (or the fins) than to the gas supply line (i.e., at a smaller distance from the gas outlets than from the gas supply line). This promotes a homogeneous gas distribution by convection.

[0101] Example 50 is configured according to any one of Examples 1 to 49, wherein a flow cross-sectional area provided by the first plurality of channels is larger than a flow cross-sectional area provided by the gas outlets (or the fins). This reduces the flow resistance to convection.

[0102] Example 51 is configured according to any one of Examples 1 to 50, wherein a flow cross-sectional area provided by the second plurality of channels is larger than a flow cross-sectional area provided by the gas outlets (or the fins). This reduces flow convection resistance.

[0103] Example 52 is configured according to any one of examples 1 to 51, wherein a number of the channels of the gas distribution structure and / or the additional gas distribution structure is greater than a number of the gas outlets (or the fins).

[0104] Example 53 is configured according to any one of Examples 1 to 52, wherein the gas distribution housing is configured to be pressure-tight. Example 54 is configured according to any one of Examples 1 to 53, wherein the first gas distribution structure and the second gas distribution structure are spaced apart by a smaller distance than the first gas distribution structure is spaced apart from the gas supply line and / or the second gas distribution structure is spaced apart from the gas outlets.

[0105] Example 55 is configured according to any one of examples 1 to 54, wherein the second gas distribution structure (also referred to as additional gas distribution structure) has a smaller distance from the first gas distribution structure than from the gas outlets (or the fins) and / or from the gas supply line.

[0106] Example 56 is configured according to any one of examples 1 to 55, wherein a flow cross section provided collectively by the channels is larger than a flow cross section provided collectively by the gas outlets.

[0107] Example 57 is configured according to any one of examples 1 to 56, wherein the fins are preferably adjacent to the gas distributor housing, e.g., connected thereto (e.g., monolithically) and / or mounted thereon in a form-fitting manner.

[0108] Example 58 (e.g., a process arrangement and / or is configured according to one of Examples 1 or 57), Process arrangement, comprising: a plurality of vacuum chambers arranged one behind the other along a transport surface, of which: two first vacuum chambers are configured as a lock chamber or coating chamber; a second vacuum chamber arranged between the two first vacuum chambers and configured as a cooling chamber by means of a convection cooling device according to one of Examples 1 to 57; a plurality of transport rollers for transporting a substrate along the transport surface through the plurality of vacuum chambers and through or past the cooling region; wherein the gas outlets of the convection cooling device are directed towards the transport surface for supplying gas to the transport surface.

[0109] Example 59 is any one of Examples 1 to 58, further configured according to any one of the appended claims.

[0110] According to various embodiments, the cooling gas can comprise or consist of an inert gas and / or a noble gas. Examples of the noble gas include: helium, neon, argon, krypton, xenon or a mixture of more than one thereof. Examples of the inert gas include: one or more noble gases, molecular nitrogen, molecular carbon dioxide, sulfur hexafluoride, or a mixture of more than one thereof. The inert gas can, for example, be adapted to the substrate and configured not to react with it. If the substrate is, for example, oxidic or at least oxidic passivated, the inert gas can, for example, comprise molecular oxygen. In the case of a passive surface of the substrate, the cooling gas can also comprise or consist of air, e.g. technically clean air.

[0111] According to various embodiments, the substrate is exposed to the cooling gas and / or a pressure thereof (also referred to as cooling pressure). The cooling pressure (also referred to as increased pressure) may, for example, be greater than 10 2 mbar (e.g. as 10 1 mbar, e.g. as 10 2 bar, e.g. as 10 1 bar, e.g., 0.3 bar) and / or less than 0.5 bar from atmospheric pressure (the pressure of the Earth's atmosphere at the place of implementation). Alternatively or additionally, the cooling pressure may deviate from (e.g., be greater than) a process pressure (at which the coating of the substrate takes place), e.g., by a factor of more than 10 1 , e.g. as 10 2 , e.g. as 10- 3 , e.g. as 10- 4. Fig. 1A illustrates a convection cooling device 100 according to various embodiments in a schematic side view or cross-sectional view, see, for example, Example 1 above, during operation. The fins 102 can be arranged one behind the other along a first direction 101 (also referred to as the longitudinal direction) and / or can be longitudinally extended along a second direction 105. The longitudinal direction 101 can, for example, be a transport direction, as will be explained in more detail later, or be transverse to the transport direction. The second direction 105 can, for example, be transverse to the longitudinal direction 101.

[0112] During operation, convection of the cooling gas 160 in the cooling region 150 can be stimulated by means of the fins 102. During operation, the cooling gas 160, the convection of which is illustrated here, can be supplied to the cooling region 150 by means of each fin 102. As illustrated, the cooling gas 160 can exit from each fin 102 along the second direction 105 (then also referred to as the exit direction 105), flow through the cooling region 150 into the gas discharge chambers 104h opposite to the exit direction 105. Each fin 102 can, for example, be assigned to one or more than one gas discharge chamber 104h, to which the fin 102 is adjacent.

[0113] By means of convection, the substrate (which is transported, for example, along the transport surface 111) can be exposed to the cooling gas and / or the cooling pressure in order to extract thermal energy from the substrate (also referred to as cooling the substrate by means of the cooling gas or, for short, convection cooling). Convection cooling can include the cooling gas absorbing the thermal energy from the substrate.

[0114] Fig. 1B illustrates the convection cooling device 100 according to various embodiments in a schematic detailed view 100b, see, for example, Example 3 above. The wall elements 102w may, for example, be plate-shaped, but do not necessarily have to be. For example, each lamella may have a plurality of pipes (e.g., round pipes or square pipes) arranged one behind the other along a third direction 103 (also referred to as transverse direction 103), each pipe providing a gas supply space 102h.

[0115] The transverse direction 103 can, for example, be transverse to the longitudinal direction 101 and / or exit direction 105.

[0116] Each slat 102 can have a gas outlet 102a at its end section adjacent to the cooling region 150, which opens into the gas supply chamber 102h of the slat. The gas outlet 102a can, for example, continue the gas supply chamber 102h and / or couple it to the cooling region 150 in a fluid-conducting manner.

[0117] Fig. 2A illustrates the operation of the convection cooling device 100 according to various embodiments in a schematic flow diagram 200a, in which arrows represent the convection of the cooling gas (also referred to as the cooling gas flow). The convection cooling device 100 has a gas supply line 202 (illustratively an inlet), by means of which the gas supply spaces 102h are fluidly coupled to one another. The convection cooling device 100 further has a gas discharge line 204, by means of which the gas discharge spaces 104h are fluidly coupled to one another. The mass flow of cooling gas exiting from each gas outlet 102a into the cooling region 150 can be absorbed by one or more than one gas discharge space 104h.The convection cooling device 100 optionally includes a convection source 252 configured to generate a pressure difference between the gas supply line 202 and the gas discharge line 204, for example, by supplying gas from the gas discharge line 204 to the gas supply line 202, optionally through a heat exchanger. An exemplary implementation of the convection source 252 includes a gas pump, by means of which the cooling gas is circulated.

[0118] Fig.2B illustrates a pair 200 of convection cooling devices 100 according to various embodiments in a schematic side view or cross-sectional view, between which the transport surface 111 is arranged and / or whose cooling regions 150 adjoin one another.

[0119] The gas outlet 102a (and thus the exit direction 105) of the convection cooling devices 100 can be directed toward a transport surface 111, which extends through the cooling region 150. During operation, a substrate can be transported along the transport surface 111, e.g., by means of a substrate carrier 110 into which the substrate is inserted. The substrate carrier 110, or at least the substrate, can be exposed to the cooling gas when it is transported through the cooling region 150.

[0120] Fig.3 illustrates the operation of the pair 200 of convection cooling devices 100 according to various embodiments in a schematic perspective view 300 analogous to Fig.1

[0121] Fig. 4A illustrates a cooling chamber 400 according to various embodiments (see, for example, Example 13) in a schematic side view or cross-sectional view, which has one or more than one convection cooling device 402, each of which can be configured, for example, as explained for the convection cooling device 100 (e.g., having the fins). The vacuum chamber 802 can have a chamber body, through the interior of which the transport surface 111 extends. Furthermore, the convection cooling device 402 can have one or more than one gas outlet 102a, which is configured to supply gas to a cooling space 150 adjacent to the transport path in the transport surface 111.

[0122] Fig. 4B illustrates a cooling chamber 400 according to various embodiments (see, for example, Example 13) in a schematic side view or cross-sectional view, which has one or more than one convection cooling device 402, e.g., convection cooling device 100. The cooling chamber 400 can have a housing device 404 that is configured to be brought into a plurality of mutually different states, which have at least a first state (also referred to as cooling state) and a second state (also referred to as transport state). When brought into the cooling state, the housing device 404 (or at least one or more than one housing part thereof) can have a smaller distance from the transport surface 111 than in the transport state.

[0123] When brought into the cooling state, the housing device 404 can enclose the cooling space 150, e.g., surround it on at least 3, 4, 5, or 6 sides.

[0124] During operation, the substrate, which is transported along the transport surface 111 (e.g., in the transport direction 101), can be arranged stationary in the cooling chamber 150 or at least adjacent thereto. The housing device 404 can then be brought into the cooling state, for example, by moving a housing part of the housing device 404 configured as a hood toward the transport surface 111. Once the housing device 404 is brought into the cooling state, the substrate can be exposed to the cooling gas and / or the cooling pressure in order to extract thermal energy from the substrate. The cooling gas can be supplied to the cooling chamber 150 by means of the convection cooling device 402 and optionally withdrawn therefrom again.

[0125] 5A and 5B each illustrate a cooling chamber according to various embodiments 500a, 500b (see, for example, Example 13) in a schematic side view or cross-sectional view, which comprises one or more than one convection cooling device 402, e.g., convection cooling device 100. The cooling chamber may comprise two substrate transfer valves 506, between which the cooling space 150 and / or the packaging device 404 are arranged.

[0126] The housing device 404 can have two housing parts 502, 504, of which a first housing part 502 is designed as a hood 502 and a second housing part 504 is designed as a (e.g. plate-shaped) housing base 504, and which are mounted movable relative to one another and / or relative to the transport surface 111.

[0127] The transport device can have a plurality of transport rollers 508, which are adjacent to the transport surface 111 and arranged one behind the other along the transport direction 101. Each of the transport rollers can be rotatably mounted about a rotation axis that is transverse to the transport direction 101.

[0128] During operation, the substrate, which is transported along the transport surface 111 (e.g., in the transport direction 101), can be arranged stationary in the cooling chamber 150 or at least adjacent thereto. The housing device 404 can then be brought into the cooling state by moving 511 a hood 502 and the housing base 504 toward each other and / or toward the transport surface 111. Once the housing device 404 is brought into the cooling state, the substrate can be exposed to the cooling gas and / or the cooling pressure in order to extract thermal energy from the substrate. The cooling gas can be supplied to the cooling chamber 150 by means of the convection cooling device 402 and optionally withdrawn therefrom again.

[0129] The housing device 404 makes it possible to gas-separate the cooling space 150 (e.g., vacuum-tight) from the rest of the vacuum chamber, so that a greater pressure (e.g., by a factor of 10, or 10 2 , 10 3 , or 10 5larger) than the interior of the cooling chamber outside the housing device 404.

[0130] Alternatively or additionally, the gas supply, which opens into the cooling chamber 150 and through which the cooling gas is supplied, can be used after cooling the substrate to extract gas from the cooling chamber 150, for example, until it reaches a high vacuum. This simplifies the design.

[0131] The cooling space 150 within the housing device 404 can have a small volume compared to the volume of the interior of the cooling chamber (e.g., in a ratio of 1 to 5 or less, in a ratio of 1 to 10 or less, e.g., 1 to 50 or less). For this purpose, the distance between the cooling plates 502, 504 in the cooling state can be designed to be as small as possible. Cooling then occurs through convection of the cooling gas between the substrate and the cooling plates. This is advantageous, for example, for smooth and / or plate-shaped substrates. According to embodiments 500a, the hood 502 can be mounted in a stationary manner relative to the transport surface 111. According to embodiments 500b, the hood 502 and the housing base 504 can be mounted movably (e.g., translationally) relative to the transport surface 111.

[0132] Fig.6 illustrates the temperature T of a substrate over time Z, which can correspond, for example, to a path along which the substrate is transported in the transport direction 101 through several vacuum chambers, in a schematic diagram 600.

[0133] The phases are: a temperature rise 501 due to plasma pretreatment, a temperature rise 502 due to coating the substrate (also referred to as coating), a temperature drop 503 due to radiation cooling, and a temperature drop 504 due to convection cooling. Convection cooling may involve exposing the substrate to convection of the cooling gas, which removes thermal energy from the substrate. This may result in the substrate being exposed to the pressure (also referred to as cooling pressure) of the cooling gas, e.g., in the cooling region.

[0134] Fig.7 illustrates a process arrangement 700 in a schematic construction diagram and detailed views 700a, 700b, 700c thereof according to various embodiments, which has a plurality of vacuum chambers C1 - C71 arranged one behind the other in a row in the transport direction 101 (also referred to as a chamber row or chamber system).

[0135] The chamber system features:

[0136] - two lock chambers C1, C71 of the first type (see 700a and 700c);

[0137] - two processing systems 702 (see 700a and 700c), each of which is arranged between the two lock chambers C1, C71 of the first type, and which may optionally differ from each other, for example in a number of vacuum chambers, in a number and / or type of processing devices, in an order of the processing device in the transport direction;

[0138] - one or more cooling systems (see 700b) arranged between the two process systems 702. It can be understood that, alternatively or in addition to the cooling system(s) arranged here between the two process systems 702, one or more cooling systems (not shown) configured in an analog manner can be arranged between the lock chamber C71 and the rear process system 702 (see 700c). It can further be understood that, in the case of more than two process systems 702, one or more cooling systems (not shown) configured in an analog manner can be arranged between each two immediately adjacent process systems 702.

[0139] Each of the two first-type lock chambers C1, C71 (also referred to as the entrance lock and exit lock) is designed to transfer a substrate between the Earth's atmosphere and the vacuum. For this purpose, each first-type lock chamber C1, C71 has a substrate transfer valve (T) exposed to the Earth's atmosphere.

[0140] Each of the two process systems 702 comprises:

[0141] - one or more than one processing chamber C21, C41, C42 (e.g. comprising vacuum chamber C21 for pretreatment);

[0142] - a pair of transfer chambers C3, C51 of the first type. Each processing chamber C21, C41, C42 is configured to process a substrate, e.g., to coat it, pretreat it (e.g., heat it and / or dry it), etc. Various processing chambers configured as coating chambers are shown as examples, i.e., processing chambers configured to perform a coating process. Examples of the coating process include: coating the substrate (also referred to as a coating process) with an adhesion layer (see coating chamber C41); coating the substrate with a copper layer (see coating chamber C42, C44, C45).

[0143] Of the pair of first-type transfer chambers C3, C51, a first (e.g., input-side) transfer chamber C3 can be configured to convert the individual transport to group transport (also referred to as train formation), and a transfer chamber C51 arranged downstream along the transport direction (e.g., output-side) can be configured to convert the group transport to individual transport (also referred to as train dissolution). In other words, the pair of first-type transfer chambers C3, C51 ensures that each substrate transported along the transport direction 101 is first fed to a train formation and then to a train dissolution.

[0144] The cooling system (see 700b) has:

[0145] - the cooling chamber C / T8, which is preferably implemented by means of the convection cooling device;

[0146] - two or more than two lock chambers C7, C11 of the second type, between which the cooling chamber C / T8 is arranged;

[0147] - a pair of transfer chambers C5, C31 of the second type, between which the two or more than two lock chambers C7, C11 and / or the cooling chamber C / T8 are arranged;

[0148] Each of the two or more than two lock chambers C7, C11 of the second type (also referred to as internal lock chamber) is configured to transfer a substrate between vacuum and the cooling chamber C / T8, e.g., the pressure of cooling gas provided therein (which may, for example, be greater than 0.3 mbar). For this purpose, each internal lock chamber C7, C11 has a substrate transfer valve (X) exposed to the cooling chamber C / T8 (e.g., its interior).

[0149] Of the pair of second-type transfer chambers C5, C31, a first (e.g., input-side) transfer chamber C5 can be configured for tension release, and a second transfer chamber C31 arranged behind it along the transport direction (e.g., output-side) can be configured for tension formation. In other words, the pair of second-type transfer chambers C5, C31 ensures that each substrate transported along the transport direction 101 is first subjected to tension release and then to tension formation. This facilitates the operation of the internal lock chambers and thus increases the scope for the cooling pressure (e.g., convection), which facilitates the cooling of the substrate by convection.

[0150] Optionally, the process arrangement may comprise a transfer system 750 configured to transfer a transport object (e.g., a carrier) between the two lock chambers C1, C71 of the first type along a transfer path arranged adjacent to the plurality of vacuum chambers. The transfer system may optionally comprise:

[0151] - a retractable table T0, and

[0152] - Extendable table T8. The illustrated implementation of the process arrangement 700 meets high productivity requirements, e.g., a requirement for a short cycle time, e.g., 45 seconds or less (i.e., a substrate is transported past the cooling device every 45 seconds). Coating can thus be carried out continuously, for example.

[0153] In the exemplary implementation shown here, the two internal lock chambers C7, C11 can have only a first internal lock chamber C7 (also referred to as internal discharge chamber) and only a second internal lock chamber C11 (also referred to as internal infeed chamber). As explained above, it can be understood that, as an alternative to a single internal discharge chamber C7 (see 700b), several consecutively arranged internal discharge chambers can also be used, of which immediately adjacent discharge chambers are separated from one another by a substrate transfer valve 506. Alternatively or additionally, as an alternative to a single internal infeed chamber C11 (see 700b), several consecutively arranged internal infeed chambers can also be used, of which immediately adjacent infeed chambers are separated from one another by a substrate transfer valve 506.

[0154] In the case of two internal discharge chambers C7 arranged one behind the other, the lock chamber facing the train dissolution C5 can preferably be operated as a high-vacuum lock chamber, and the lock chamber facing the cooling chamber C / T8 can be operated as a pre-vacuum lock chamber. In the case of two internal infeed chambers C11 arranged one behind the other, the lock chamber facing the train formation C31 can preferably be operated as a high-vacuum lock chamber, and the lock chamber facing the cooling chamber C / T8 can be operated as a pre-vacuum lock chamber. For example, the following series of chambers can be arranged one behind the other: train dissolution, high-vacuum lock chamber, pre-vacuum lock chamber, cooling chamber, pre-vacuum lock chamber, high-vacuum lock chamber, train formation.

[0155] In an exemplary implementation of the process arrangement 700, one or more than one substrate per carrier, into which the one or more than one substrate is inserted, is transported by means of the plurality of transport rollers. Several carriers are transported as a group (also referred to as carrier group transport), so that they form a continuous carrier belt that is transported through the process arrangement 700. Before the maximum permissible substrate temperature is reached, the carriers are separated (i.e., transferred to an individual transport), here exemplarily in the vacuum chamber C5. In one of the internal lock chambers C7 (also referred to as the internal discharge chamber), a pressure release occurs, to which the separated carrier is exposed. The interior of the internal discharge chamber C7, in which the separated carrier is arranged, is sealed on both sides in the transport direction 101 by means of substrate transfer valves.One or more cooling elements (e.g., a cooling plate and / or a supply for cooled gas) can optionally be arranged inside the internal discharge chamber C7. In the cooling chamber C / T8, the carriers and substrates are cooled by an inert gas, nitrogen, or ambient air as a cooling gas at an elevated pressure (e.g., greater than 0.3 bar, e.g., atmospheric pressure). The chemical composition of the cooling gas can be such that chemical interaction of the cooling gas with the deposited layer on the substrate is avoided. The cooling gas can optionally be pre-cooled, e.g., to a desired temperature. For this purpose, the cooling gas can be guided through an optional gas guide device, which is cooled, and then directed at the substrate at excess pressure. The gas guide device can be configured such that the gas can be withdrawn again between the gas outlets 102a (also referred to as gas supply points).The volume of the cooling chamber can be kept small in order to minimize the pumping time before the lock. Alternatively or additionally, the actively flowed volume or the flowed distance around the substrate can be reduced, e.g., by means of a housing device 404, which, for example, has a pressure plate and / or a hood (clearly providing a chamber in the cooling chamber). The pressure is reduced to working pressure by means of one of the internal lock chambers C11 (also referred to as the internal infeed chamber). One or more cooling elements can optionally be arranged inside the internal infeed chamber, analogous to the internal outfeed chamber. Downstream of the infeed chamber, a draft is formed in the transfer chamber C31. Coating then continues. Depending on the layer system and requirements, the cooling can be repeated.

[0156] An exemplary implementation of the cooling system (also called cooling station) has several cooling chambers arranged one behind the other along the transport surface.

[0157] Further exemplary implementations of the process arrangement 700, which meet less stringent cycle time requirements, are explained below.

[0158] It can generally be understood that the substrate transfer valve between the processing chambers C41, C42 can also be omitted.

[0159] Fig.8 illustrates the process arrangement 700 according to various embodiments 800 in a schematic structural diagram and detailed views 800a, 800b, 800c thereof, which has a plurality of vacuum chambers C1 - C7 arranged one behind the other in a row along the transport direction 101 (also referred to as a chamber row or chamber system).

[0160] In the exemplary implementation shown, the processing arrangement 700 comprises:

[0161] - a retractable table T0,

[0162] - an entrance lock C1,

[0163] - a processing chamber C2 for plasma pretreatment,

[0164] - one or more than one coating chamber C4x for double-sided coating with double-tube magnetrons,

[0165] - a cooling system C6x, comprising at least the cooling chamber;

[0166] - an exit gate C7,

[0167] - an exit table T8.

[0168] It can be understood that, optionally, in addition to the cooling system C6x arranged here between the exit lock C7 and the coating chamber C4x, one or more cooling systems configured similarly (not shown) can be arranged between the cooling system C6x and the exit lock C7 (see break line between 700b and 700c). For example, in the case of multiple coating chambers C4x, one or more cooling systems configured similarly (not shown) can be arranged between each two immediately adjacent coating chambers C4x.

[0169] The illustrated implementation of the embodiments 800 meets lower productivity requirements, e.g., a specified cycle time of 2 minutes or more (illustratively a medium-productivity system, also referred to as "step and go"), but is less complex. The coating is carried out step by step in one or more process chambers C4x configured as a coating chamber, each process chamber being configured as a coating chamber by means of one or more coating sources. The transport of several carriers can be carried out according to the individual transport, so that no jointly transported carrier train needs to be formed. The interior of adjacent vacuum chambers can be separated from one another by means of a chamber valve. During coating, the carrier (or analogously, an individual substrate) can be statically (i.e.The carrier can be arranged in a stationary manner (i.e., stationary), set in a pendulum motion (also referred to as pendulum transport), or transported continuously through the coating chamber (also referred to as single pass). Before the maximum permissible temperature is reached, the carrier (or, analogously, a single substrate) is transported into a cooling chamber C6x, where it is cooled by an inert gas, nitrogen, or ambient air as a cooling gas at an increased pressure (e.g., greater than 0.3 bar, e.g., atmospheric pressure). The chemical composition of the cooling gas can be such that chemical interaction of the cooling gas with the deposited layer on the substrate is avoided. The interior of the cooling chamber can be separated from adjacent vacuum chambers by means of chamber valves. The cooling gas can optionally be pre-cooled, e.g., to a target temperature.For this purpose, it can be guided to the substrates at overpressure through a suitable, optionally cooled gas guide device. The gas guide device can be configured such that the gas can be discharged again between the gas supply points. For this purpose, the cooling gas can be guided through an optional, cooled gas guide device and then directed at overpressure onto the substrate. The gas guide device can be configured such that the gas can be removed again via gas discharge spaces 104h between the gas outlets 102a (also referred to as gas supply points or gas outlet openings).

[0170] The gas outlet openings can, for example, be configured as longitudinal slots extending transversely to the transport direction 101 (e.g., in pendulum / dynamic mode). Alternatively, the cooling gas can flow in a directed manner onto the substrates stored in a carrier (e.g., in stationary mode). The cooling gas can be directed to the substrate either from one side or from both sides.

[0171] An exemplary implementation of the cooling system has several cooling chambers.

[0172] After the cooling process is complete, the cooling chamber (or at least the cooling space 150) is evacuated again to the process pressure in the adjacent coating chambers. The substrate is then transported in the transport direction 101 into a processing chamber, in which the coating continues. Alternatively, the substrate can be transported against the transport direction 101 into a processing chamber and coated again therein. Depending on the layer system and requirements, the cooling of the substrate can be repeated, or the individual chamber can be omitted or carried out multiple times. A pair of etching chamber and coating chamber does not necessarily have to be arranged before or after each cooling chamber, as shown, but alternatively only one processing chamber (e.g. magnetron processing chamber) can be arranged (e.g. per cooling chamber), e.g. before the cooling chamber.

[0173] It can generally be understood that the second housing part 504 can also be configured as a hood, e.g. if the first housing part 502 is configured as a hood or as a (e.g. plate-shaped) housing cover.

[0174] Fig.9 illustrates a process arrangement 700 in a schematic construction diagram and detailed views 900a, 900b, 900c thereof according to various embodiments 900, which has a plurality of vacuum chambers C1 - C7 arranged one behind the other in a row in the transport direction 101 (also referred to as a chamber row or chamber system).

[0175] In the exemplary implementation shown, the processing arrangement has:

[0176] - the TO retractable table,

[0177] - the entrance gate C1,

[0178] - a vacuum chamber C2 for plasma pretreatment,

[0179] - one or more than one coating chamber C4x for double-sided coating with double-tube magnetrons,

[0180] - having a cooling system C6x: the cooling chamber,

[0181] - an exit gate C7,

[0182] - an exit table T8.

[0183] The illustrated implementation of embodiments 900 meets lower productivity requirements, e.g., a moderate cycle time specification of, for example, 2 minutes or more (illustratively, a medium-productivity system, also referred to as "step and go").

[0184] An exemplary implementation of embodiments 900 includes a largely gas-tight pressure device as the housing base 504, which tightly contacts the stationary carrier from one or both sides (top and bottom), preferably on the carrier frame. The cooling gas is admitted into the thus enclosed cooling chamber 150, so that an increased pressure (compared to the coating chamber) is provided in the cooling chamber 150, to which the substrate is exposed.

[0185] The cooling gas comprises or consists of, for example, a noble gas, e.g. argon, or a sufficiently inert gas (e.g. with regard to the coating system), e.g. nitrogen or even ambient air. Advantageously, a closed circuit with circulation and cooling of the gas is used for the cooling gas flow. The advantage of this configuration is the minimization of the volume of the cooling station operating at increased pressure and the resulting reduction in the amount of gas in the chamber at any one time. This reduces the time required to increase the pressure and the time required to restore the vacuum conditions by more than a factor of 2. This is linked to a reduction in the corresponding cycle time and a corresponding increase in the potential productivity of the coating system. The surrounding vacuum chamber acts as a vacuum buffer.

[0186] Fig.10 illustrates a convection cooling device 1000 according to various embodiments in a schematic side view or cross-sectional view, see for example Example 1 above, in operation, in which each fin 102 has a series of outlet bells arranged one behind the other, which are coupled to the same gas supply line 202.

[0187] Fig. 11 illustrates an additional implementation 1100 of the process arrangement 700 in a schematic structural diagram and detailed views 1100a, 1100b, 1100c thereof according to various embodiments, which has a plurality of vacuum chambers arranged one behind the other in a row in the transport direction 101. Fig. 12 illustrates an additional implementation 1200 of the process arrangement 700 in a schematic structural diagram and detailed views 1200a, 1200b, 1200c thereof according to various embodiments, which has a plurality of vacuum chambers arranged one behind the other in a row in the transport direction 101.

[0188] Below, exemplary implementations of the aspects discussed herein are explained as working examples, each of which may optionally be configured according to any of Examples 1 to 59.

[0189] According to Working Example 1, antennas of high quality and high durability are produced under ambient conditions, which is facilitated by a metal coating thickness in the range of several hundred nanometers (nm) to several micrometers. In particular, the coating of the substrate for producing an antenna can be achieved by sputtering using a magnetron (also known as magnetron sputtering). Sputtering using a magnetron (also known as magnetron sputtering) facilitates the fulfillment of high requirements for coating adhesion, coating durability under ambient conditions, electrophysical properties, and sufficient coverage.

[0190] According to working example 2, which can be set up like working example 1, magnetron sputtering is used to coat the substrate, whereby (for physical reasons) a comparatively large amount of thermal energy (also referred to as heat) is supplied to the substrate (also referred to as heat input) per area and per layer thickness. This heat input is based on condensation heat, kinetic energy of the sputtered particles, bombardment of the substrate with electrons and ions, recombination heat of ionized particles, and other components of the coating plasma, such as electromagnetic radiation and / or photon bombardment. The greater the specified layer thickness to be deposited, the greater the heat input into the substrate. Given an invariant heat capacity of the substrate, this heat input leads to a comparatively large increase in the temperature of the substrate during coating.

[0191] According to Working Example 3, which can be configured like one of Working Examples 1 to 2, the maximum permissible temperature of plastic (the substrate) during coating is comparatively low, e.g., compared to other materials (such as glass or metal), ranging between 150°C and 200°C. If the maximum temperature of the plastic is exceeded, the plastic begins to degas, changes its properties, and ultimately decomposes. This complicates the production of products of sufficient quality. For example, if the maximum temperature is exceeded, the coating adhesion, coating properties, and coating stability under the ambient conditions of subsequent use are impaired.

[0192] According to Working Example 4, which can be configured like any of Working Examples 1 to 3, the substrate is coated with a metal, resulting in a very low thermal emission coefficient of the resulting metal layer, which inhibits the release of heat via thermal radiation. For example, the radiation of absorbed heat is severely limited due to a low near-maximum temperature (e.g., for plastic).

[0193] According to working example 5, which can be configured like any of working examples 1 to 4, the side of the substrate being coated is uneven, which limits the possibilities for direct contacting of the substrate to promote heat dissipation by conduction. According to working example 6, which can be configured like any of working examples 1 to 5, there are high requirements for the uniformity of the coating and / or the all-roundness of the coating, which limits the possibilities for direct contacting of the substrate to promote heat dissipation by conduction.

[0194] According to working example 7, which can be configured like one of working examples 1 to 6, the coating of the substrate takes place in a process gas under vacuum (e.g., fine vacuum), which makes it difficult to dissipate a significant amount of heat by conduction in the process gas. If the pressure of the process gas (also referred to as process pressure) to which the substrate is exposed during coating is, for example, less than 10' 2 mbar and / or the distance to adjacent chamber components for cooling in the range of centimeters, the heat conduction can be physically neglected.

[0195] According to Working Example 8, which can be configured like any of Working Examples 1 to 7, the possible layer thickness is limited, which is an obstacle to meeting high productivity requirements of an inline coating system.

[0196] According to Working Example 9, which can be configured like any of Working Examples 1 to 8, the development of modern and / or highly demanding applications requires increasingly high layer thicknesses while maintaining or even decreasing the effective material thickness and / or heat capacity of the substrates. This reduces and / or exceeds thermal limitations.

[0197] According to Working Example 10, which can be configured like any of Working Examples 1 to 9, radiation cooling is used to extract thermal energy. This results in a very long cooling station in a highly productive vacuum system with high transport speeds. In conjunction with increasing layer thickness, this requires a long and therefore expensive vacuum system. These costs can increase further with decreasing emissivity of the coating, for example, if it is electrically conductive, which hinders meeting high product cost requirements.

[0198] According to working example 11, which can be configured like any of working examples 1 to 10, a coating procedure is provided in a continuously running inline PVD system, in which the cooling of the substrate takes place by means of convection to which the substrate is exposed. To facilitate the convection, a gas pressure (of the cooling gas) and / or a gas flow (of the cooling gas) is provided in one or more than one region of the PVD system along the transport direction (also referred to as a cooling station) according to a specification for cooling the substrate (e.g., a rate at which thermal energy is extracted). The cooling station can be arranged between two regions (also referred to as coating regions) of the system in which the coating of the substrate (e.g., for the deposition of individual partial layers) takes place. The specification for cooling the substrate can, for example, be related to a temperature difference and / or a length of the cooling station.Optionally, the specification can be related to a chemical composition of the cooling gas (also referred to as gas composition) and / or a temperature of the cooling gas (also referred to as gas temperature). Optionally, the specification can be related to a maximum permissible disturbance of the coating areas and / or disturbance of the substrate resulting from the coating of the substrate (e.g., the entire coating system).

[0199] According to Working Example 12, which can be configured like any of Working Examples 1 to 11, the coating of an antenna precursor as a substrate is carried out according to a specification for a layer structure for a radar antenna (or at least for a component thereof). The antenna precursor can comprise a plastic-based material.

[0200] According to working example 13, which can be configured as one of working examples 1 to 12, coating the substrate comprises coating the substrate with an adhesion promoter layer and / or with one or more metallic layers. Optionally, the substrate can be subjected to a (e.g., inline) plasma treatment prior to coating. The deposition of the one or more metallic layers is carried out, for example (to improve productivity), according to an inline configuration in which the substrate is transported through several magnetron coating chambers arranged one behind the other.

[0201] According to Working Example 14, which can be configured like any of Working Examples 1 to 13, the transport of multiple substrates takes place using a substrate carrier (also referred to as a carrier) into which the multiple substrates are inserted. Pretreatment and / or coating supplies thermal energy to the substrates, causing their temperature to rise.

[0202] According to working example 15, which can be configured like any of working examples 1 to 14, a cooling chamber (e.g., in an inline configuration, also referred to as an inline cooling chamber) is inserted at each point along the transport surface 111 (e.g., along the coating path) at which the temperature of the substrates approaches the permissible maximum temperature. Cooling in the cooling chamber is implemented at a higher pressure than in the coating stations by flowing cooled gas (also referred to as cooling gas) onto the substrates. The inline cooling chamber can be provided as part of a system (also referred to as a cooling system) configured to accommodate and / or generate group transport (e.g., of carriers and / or substrates).

[0203] According to working example 16, which can be set up like one of the working examples 1 to 15, the gas used for cooling (also referred to as cooling gas) comprises or consists of a noble gas, e.g. argon, or a gas that is sufficiently inert with respect to the layer system, e.g. nitrogen or ambient air.

[0204] According to working example 17, which can be configured like any of working examples 1 to 16, the cooling gas is guided in a closed circuit that implements circulation and cooling of the cooling gas.

[0205] According to Working Example 18, which may be configured as any one of Working Examples 1 to 17, various vacuum coating embodiments explained herein are used.

[0206] According to Working Example 18, which can optionally be configured like any of Working Examples 1 to 17, the uppermost gas distribution structure provides a number N (e.g., a pair) of gas channels, among which the gas flow from the gas supply line is distributed (e.g., completely, for example, substantially equally). The gas distribution structure(s) arranged below each gas channel of the gas distribution structures arranged immediately above have the number N (e.g., a pair) of gas channels, among which the gas flow from the gas channel of the gas distribution structure arranged immediately above is distributed (e.g., completely, for example, substantially equally). Thus, the number of gas channels through which the gas flow flows increases with N as the base and the number of gas distribution structures as the exponent, which improves homogeneity. N can, for example, be two, three, four, or more and does not have to be chosen to be the same for each gas distribution structure.

[0207] According to working example 19, which can be configured, for example, like one of working examples 1 to 18, a convection cooling device (100) comprises: a cooling region (150); a plurality of fins (102) arranged one behind the other along a row, each fin (102) having a first cavity (102h) and a gas outlet (102a) adjacent to the cooling region (150) and opening into the first cavity (102h); a plurality of second cavities adjacent to the cooling region (150), wherein the plurality of fins (102) are spatially separated from one another, so that one of the plurality of second cavities (104h) is formed between two immediately adjacent fins (102); a gas supply line (202) which is coupled to the cooling area (150) by means of the first cavity (102h) of each lamella (102) in order to supply gas to the cooling area (150) by means of the lamella (102);a gas discharge line (204) by means of which a plurality of second cavities are coupled to the cooling region (150) in order to extract gas from the cooling region (150);

[0208] According to working example 20, which can be configured, for example, as one of working examples 1 to 19, a convection cooling device (100) comprises: a convection source (252) which is configured to generate a pressure difference between the gas supply line (202) and the gas discharge line (204).

[0209] According to working example 21, which may be configured, for example, as any one of working examples 1 to 20, each slat (102) has a pair of wall elements (102w) between which the first cavity (102h) is formed, wherein, preferably, each wall element (102w) of the pair of wall elements (102w) separates the first cavity (102h) from one of the second cavities (104h).

[0210] According to working example 22, which can be configured, for example, as one of working examples 1 to 21, a convection cooling device (100) has the plurality of fins (102) arranged one behind the other along a direction in the row, wherein an extension of the first cavity (102h) along the direction deviates by less than 50% from an extension of the second cavity (104h) along the direction.

[0211] According to working example 23, which can be configured, for example, like any of working examples 1 to 22, a cooling chamber (400) comprises: a vacuum chamber (802); a plurality of transport rollers (508) for transporting a substrate along a transport surface (111) in the vacuum chamber (802); a housing device (404) configured to be brought into multiple states, a first state of which provides a cooling space (150) enclosed by the housing device (404) and delimited by the transport surface (111), and a second state of which at least partially exposes the cooling space (150); a convection cooling device (100) having one or more than one gas outlet (102a), each gas outlet (102a) configured to supply gas to the cooling space (150); wherein the convection cooling device (100) is preferably configured according to one of claims 1 to 4.According to working example 24, which may be configured, for example, as any one of working examples 1 to 23, a cooling chamber (400) comprises: a drive device configured to drive a movement of the housing device (404) to stimulate a state change of the housing device (404).

[0212] According to working example 25, which may be configured, for example, as one of working examples 1 to 24, a cooling chamber (400) comprises: an actuating device configured to be controlled in response thereto to link an actual state of the convection cooling device (100) and an actual state of the housing device (404) with each other.

[0213] According to working example 19, which may be configured, for example, as one of working examples 1 to 18, the housing device (404) comprises a hood-shaped first housing part (502) in the interior of which the cooling space (150) is provided, wherein the plurality of states preferably differ from each other in a position of the first housing part (502) relative to the transport surface (111).

[0214] According to working example 20, which can be configured, for example, as one of working examples 1 to 19, a cooling chamber (400) comprises: the housing device (404) comprises a plate-shaped second housing part (504), wherein the transport surface (111) is arranged between the first housing part (502) and the second housing part (504).

[0215] According to working example 21, which can be configured, for example, like one of working examples 1 to 20, a process arrangement comprises: a plurality of vacuum chambers (802) arranged one behind the other along a transport surface (111), of which: two first vacuum chambers (802) are configured as a lock chamber (C7, C11) or coating chamber (C41, C42, C44, C45); a second vacuum chamber (802) is arranged between the two first vacuum chambers and, by means of a convection cooling device (100), serves as a cooling chamber (400); a plurality of transport rollers (508) for transporting a substrate along the transport surface (111) through the plurality of vacuum chambers (802); wherein the convection cooling device (100) has one or more than one gas outlet directed toward the transport surface (111) for supplying gas to the transport surface (111); wherein the cooling chamber (400) is preferably configured according to any one of working examples 1 to 20.

[0216] Fig.13 illustrates a convection cooling device 100 according to various embodiments 1300 in a schematic side view or cross-sectional view, see for example Example 39 above. Alternatively or in addition to the fins 102 and / or the gas discharge, the convection cooling device may have a gas distribution housing 1302.

[0217] In other words, each gas outlet 102a of the gas outlets may be implemented by means of a louvre, as explained herein, but this need not necessarily be the case. As illustrated, an exemplary implementation of each gas outlet 102a of the gas outlets may be implemented, for example, by means of a through-opening penetrating a wall (e.g., first end wall) of the gas distribution housing 1302.

[0218] An exemplary implementation of the plurality of gas outlets comprises one or more than one row of gas outlets arranged one behind the other along the longitudinal direction 101 (e.g., 10 or more, e.g., 50 or more, e.g., 100 or more, e.g., 1000 or more). An exemplary implementation of the gas distribution housing 1302 comprises a plurality of (e.g., 6) outer walls, each outer wall of which delimits the cavity 1302h (also referred to as gas distribution space). The outer walls comprise two opposing end walls 1302a, 1302b, a first end wall 1302b of which faces the cooling region 150. The outer walls further comprise a plurality of (e.g., three, four, or more than four) side walls, each side wall of which adjoins each of the two end walls 1302a, 1302b.An exemplary implementation of the end walls 1302a, 1302b has a second end wall 1302b, which adjoins the gas supply line 202 and / or the first section 1302o (also referred to as inlet section) of the gas distribution space 1302.

[0219] An exemplary implementation of the side walls has one or more than one side wall that is oblique to the outlet direction 105, and / or two opposing side walls that are aligned obliquely to each other. For example, the distance between the side walls or at least the circumference of a cross-sectional area of ​​the gas distribution space 1302h delimited by the side walls can increase in the direction toward the gas outlets 102a. For example, the gas distribution space can taper toward the inlet section 1302o. This improves the spatial distribution of convection.

[0220] An exemplary implementation of the first end wall 1302b is penetrated along the exit direction 105 by a plurality of through-openings, each of which provides a gas outlet 102a or adjoins the gas supply space 102h of a lamella (if present). An exemplary implementation of the second end wall 1302b is penetrated along the exit direction 105 by a through-opening, through which the gas supply line 202 opens into the inlet section 1302o.

[0221] An exemplary implementation of the inlet section 1302o is delimited by the plurality of side walls 1302s, the second end wall 1302b, and the first gas distribution structure 1304. Alternatively or additionally, the inlet section 1302o is gas-conductingly coupled to a second section 1312o of the gas distribution space 1302 by means of the gas channels 1304k of the gas distribution structure 1304.

[0222] It can be understood that only the first or alternatively a plurality of gas distribution structures can be arranged in the gas distribution space 1302 (e.g., one behind the other along the exit direction 105), e.g., a stack of a plurality of gas distribution structures comprising the first gas distribution structure 1304. Therefore, various implementations of the gas distribution structure will be discussed below, with the descriptions applying analogously to the first gas distribution structure 1304 and, if present, any other of the plurality of gas distribution structures.

[0223] An exemplary implementation of the (e.g., each) gas distribution structure (also referred to as a diffuser structure) has a wall (e.g., a sheet, e.g., a diffuser sheet) penetrated (e.g., along the exit direction 105) by a plurality (e.g., 10 or more, e.g., 50 or more, e.g., 100 or more, e.g., 1000 or more) of through-openings, each through-opening providing a gas channel 1304k. For example, each gas channel can be provided by means of a bore. For example, the gas distribution structure 1304 can be a perforated sheet, a grid, or a mesh, or a combination thereof. This is particularly cost-effective. An exemplary implementation of the (e.g., each) gas distribution structure 1304 is arranged closer to the gas supply line 202 than to the plurality of gas outlets 102a. Alternatively or additionally, the (e.g., each) gas distribution structure 1304 is arranged closer to the second end wall 1302b than to the first end wall 1302a.This improves the spatial gas distribution, e.g. its speed.

[0224] During operation, the gas distribution structure allows for the spatial distribution of the cooling gas 160, which is supplied to the gas distribution space 1302 via the gas supply line 202, within the gas distribution space 1302. During operation, the thus distributed convection of the cooling gas 160 can be distributed to the gas outlets 102a and supplied to the cooling area 150 via these outlets. The cooling gas 160 can flow through each gas channel along the second direction 105, through the gas outlets 102a, and into the cooling area 150.

[0225] In general, it can be understood that the gas distribution is improved the more gas distribution structures are arranged one behind the other and / or the more gas channels are present per gas distribution structure.

[0226] Fig. 14 illustrates a convection cooling device 100 in various embodiments 1400a to 1400d in a schematic side view or cross-sectional view, see for example the above examples 1 and 39, which differ from each other in the number of gas distribution structures 1304 within the gas distribution space 1302. In diagram 1400e, for each of the embodiments 1400a to 1400d, a measurement of the spatial distribution of the velocity v at which the convection 150 flows through the gas outlets 102a is shown.

[0227] The illustrated exemplary implementation of the gas distribution housing 1302 provides a gas distribution chamber that tapers toward the inlet section 1302o. Furthermore, a plurality of fins are present, the front openings of which provide the gas outlets 102a. Optionally, a plurality of gas distribution structures 1304 can differ from one another in their geometry (e.g., cross-sectional area), in their spatial density of channels (e.g., number per area), and / or in their number of channels per gas distribution structure.

[0228] As can be seen in diagram 1400e, the variance of the velocity v decreases with the increasing number of gas distribution structures 1304. Without gas distribution structures 1304, the velocity variance was approximately 50%. With a gas distribution structure 1304, the velocity variance was approximately 10%, which represents a significant improvement in the spatial homogeneity of the convection 150. Starting with a stack of two gas distribution structures 1304 arranged one below the other, the velocity variance was less than 1%, which satisfies particularly high demands on the spatial homogeneity of the convection 150 and thus on the spatial homogeneity of the substrate cooling.

[0229] Furthermore, a reduction in noise emissions was observed with an increasing number of gas distribution structures 1304, which benefits occupational safety.

[0230] According to an exemplary implementation of embodiment 1400b, cooling of a substrate from 180°C to 50°C was achieved within 60 seconds. According to an exemplary implementation of embodiment 1400c, it was determined that the homogenizing effect of the gas distribution structure arranged near the fins is greater than the homogenizing effect of the gas distribution structure arranged near the gas supply line.

[0231] For example, the homogeneity of convection 150 may increase the closer the gas distribution structure(s) are arranged to the gas outlets. Nevertheless, the gas distribution structure(s) should be separated from each other and / or from the fins by a distance, for example, by at least the distance between two gas outlets.

[0232] During operation, a gas (e.g., an inert gas) is supplied to the gas distribution housing via the gas supply line. This gas flows through several gas distribution structures arranged one behind the other along the gas flow direction. The resulting spatial distribution of the gas flows through each of the fins and exits at their gas outlets as convection into the cooling area.

Claims

Patent claims 1. Convection cooling device (100), comprising: • a cooling area (150); • a plurality of gas outlets (102a), each gas outlet (102a) adjacent to the cooling area (150); • a gas distributor housing (1302) which has a cavity (1302h) which couples the gas outlets (102a) to one another in a gas-conducting manner; • a gas supply line (202) which opens into a first section of the cavity (1302h) and is coupled to the cooling region (150) in a gas-conducting manner by means of the gas outlets (102a) in order to supply gas to the cooling region (150) by means of the gas outlets (102a); • a first gas distribution structure (1304) arranged between the first section and the gas outlets in the cavity and penetrated by a first plurality of channels (1304k), each channel opening into the first section.

2. Convection cooling device (100) according to claim 1, further comprising a second gas distribution structure arranged between the first gas distribution structure and the gas outlets in the cavity and penetrated by a second plurality of channels, each channel opening into a second portion of the cavity adjacent to the first gas distribution structure.

3. Convection cooling device (100) according to claim 2, wherein the second gas distribution structure is penetrated by more channels than the first gas distribution structure and has a smaller distance from the first gas distribution structure than from the gas outlets.

4. Convection cooling device (100) according to one of claims 2 to 3, wherein the first gas distribution structure and / or the second gas distribution structure are penetrated by the channels along the same direction.

5. Convection cooling device (100) according to one of claims 1 to 4, wherein the first gas distribution structure has a wall penetrated by the channels.

6. Convection cooling device (100) according to one of claims 1 to 5, wherein the housing tapers in a direction away from the gas outlets and / or towards the gas supply line (202).

7. Convection cooling device (100) according to one of claims 1 to 6, wherein the first gas distribution structure has a smaller distance from the gas outlets (102a) than from the gas supply line (202).

8. Convection cooling device (100) according to one of claims 1 to 7, wherein a flow cross-sectional area provided collectively by the first plurality of channels is larger than a flow cross-sectional area provided collectively by the gas outlets (102a).

9. Convection cooling device (100) according to one of claims 1 to 8, wherein the gas supply line (202) opens into the first section of the cavity along a direction towards the gas outlets.

10. Convection cooling device (100) according to one of claims 1 to 9, wherein each gas outlet is provided by means of a fin (102), each fin (102) having a first cavity (102h) and the gas outlet (102a) adjacent to the cooling region (150) which opens into the first cavity (102h).

11. Convection cooling device (100) according to claim 10, further comprising: • a plurality of second cavities adjacent to the cooling region (150), wherein the plurality of slats (102) are spatially separated from one another, so that one of the plurality of second cavities (104h) is formed between two immediately adjacent slats (102); • wherein the gas supply line (202) is coupled to the cooling region (150) by means of the first cavity (102h) of each lamella (102) in order to supply gas to the cooling region (150) by means of the lamella (102); • a gas discharge line (204) by means of which a plurality of second cavities are coupled to the cooling region (150) in order to extract gas from the cooling region (150).

12. Convection cooling device (100) according to claim 11, further comprising: • a convection source (252) which is configured to generate a pressure difference between the gas supply line (202) and the gas discharge line (204).

13. Process arrangement (700), comprising: a plurality of vacuum chambers (802) arranged one behind the other along a transport surface (111), of which: • two first vacuum chambers (802) are set up as a lock chamber (C7, C11) or coating chamber (C41, C42, C44, C45); • a second vacuum chamber (802) is arranged between the two first vacuum chambers and is configured as a cooling chamber (400) by means of a convection cooling device (100) according to one of claims 1 to 12; a plurality of transport rollers (508) for transporting a substrate along the transport surface (111) through the plurality of vacuum chambers (802) and through or past the cooling region (150); wherein the gas outlets of the convection cooling device (100) are directed towards the transport surface (111) for supplying gas to the transport surface (111).

14. Process arrangement (700) according to claim 13, wherein the two first vacuum chambers (802) are configured as lock chambers (C7, C11), each lock chamber preferably having one or more than one substrate transfer valve.

15. Process arrangement (700) according to claim 14, wherein of the plurality of vacuum chambers (802) arranged one behind the other along the transport surface (111), two additional vacuum chambers (802) are Coating chambers (C41, C42, C44, C45) are arranged, between which the two first vacuum chambers (802) are arranged.

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