Surface acoustic wave resonance apparatus and forming method therefor, filter, and duplexer

Abstract

A surface acoustic wave resonance apparatus and a forming method therefor, a filter, and a duplexer. The apparatus comprises: a piezoelectric layer; and an electrode structure, which is located on the piezoelectric layer, wherein the electrode structure comprises a first bus and a second bus. The first bus is connected to several first electrode strips, and the second bus is connected to a second electrode strip, wherein each first electrode strip comprises a first portion, a second portion and a third portion; the second electrode strip comprises a fourth portion, a fifth portion and a sixth portion; and there are a first spacer region, a first low-speed region, an overlapping region, a second low-speed region and a second spacer region between the first bus and the second bus. The second portion is located in the first low-speed region, and the fifth portion is located in the second low-speed region. By using the second portion located in the first low-speed region and the fifth portion located in the second low-speed region, the propagation speed of energy from the overlapping region to the first spacer region and the second spacer region can be reduced, so as to form a piston mode, thereby effectively inhibiting a transverse parasitic mode generated by the energy in the overlapping region.

Description

Surface acoustic wave resonator device and forming method thereof, filter, and duplexer

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on August 10, 2023, with application number 202311009053.5 and invention name “Surface acoustic wave resonator device and its formation method, filter, and duplexer”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the field of semiconductor technology, and in particular to a surface acoustic wave resonator device and a forming method thereof, a filter, and a duplexer. Background Art

[0003] The RF front-end chips for wireless communication devices include power amplifiers, antenna switches, RF filters, multiplexers, and low-noise amplifiers. RF filters include piezoelectric surface acoustic wave (SAW) filters, piezoelectric bulk acoustic wave (BAW) filters, micro-electro-mechanical system (MEMS) filters, and integrated passive device (IPD) filters.

[0004] SAW resonators have a high quality factor (Q value). RF filters fabricated from SAW resonators offer low insertion loss and high out-band rejection, and are currently the mainstream RF filters used in wireless communication devices such as mobile phones and base stations. SAW resonators have a negative temperature coefficient of frequency (TCF), meaning that as the temperature rises, the resonant frequency decreases, and as the temperature drops, the resonant frequency increases. This reduces the reliability and stability of SAW filters. To improve the resonant frequency drift of SAW resonators with operating temperature, a temperature compensation layer is added to the piezoelectric layer. The temperature compensation layer has an opposite frequency temperature coefficient to that of the piezoelectric layer. The combination of these two layers brings the overall frequency temperature coefficient of the resonator toward zero, improving the reliability and stability of the filter. SAW resonators containing this temperature compensation layer are called temperature-compensated SAW (TC-SAW) resonators, and filters composed of TC-SAW resonators are called TC-SAW filters.

[0005] However, there are still many problems with surface acoustic wave resonator devices.

[0006] Summary of the Invention

[0007] The problem solved by the present invention is to provide a surface acoustic wave resonator device and a forming method thereof, a filter, and a duplexer to suppress transverse parasitic modes.

[0008] To solve the above problems, the technical solution of the present invention provides a surface acoustic wave resonance device, comprising: a piezoelectric layer; an electrode structure located on the piezoelectric layer, the electrode structure comprising a first bus and a second bus arranged in parallel along a first direction, the first bus connecting a plurality of first electrode strips arranged in parallel along a second direction, the second bus connecting a plurality of second electrode strips arranged in parallel along the second direction, the first direction is perpendicular to the second direction, and the first electrode strips and the second electrode strips are staggered; the first electrode strip comprises a first portion, a second portion and a third portion, the second portion comprises a first end and a second end opposite to each other, the first portion is connected to the first end of the second portion, and the third portion is connected to the second end of the second portion; the second electrode strip comprises a fourth portion, a fifth portion and a sixth portion, the fifth portion comprises a third end and a fourth end opposite to each other, the fourth portion is connected to the The third end of the fifth part is connected, and the sixth part is connected to the fourth end of the fifth part; there is a connection angle between the first part and the second part, between the second part and the third part, between the fourth part and the fifth part, and between the fifth part and the sixth part; there is a first spacing area, a first slow area, an overlapping area, a second slow area and a second spacing area arranged in sequence along the first direction between the first bus and the second bus, the first part is located in the first spacing area, and the first part is connected to the first bus, the second part is located in the first slow area, the third part and the sixth part are located in the overlapping area, and along the second direction, the third part and the sixth part have a partial overlap, the fourth part is located in the second spacing area, and the fourth part is connected to the second bus, and the fifth part is located in the second slow area.

[0009] Optionally, the connection angle ranges from 1° to 89°.

[0010] Optionally, the connection angle ranges from 90° to 179°.

[0011] Optionally, the first part, the second part, the third part, the fourth part, the fifth part and the sixth part are all single-layer structures with the same material and the same thickness.

[0012] Optionally, materials of the first part, the second part, the third part, the fourth part, the fifth part and the sixth part include: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.

[0013] Optionally, the thickness of the second part and the fifth part is respectively greater than the thickness of the first part, the third part, the fourth part and the sixth part.

[0014] Optionally, the first part, the third part, the fourth part and the sixth part are single-layer structures; the second part and the fifth part are double-layer structures.

[0015] Optionally, the second part and the fifth part respectively include: a first metal layer, and a second metal layer located on the first metal layer, and the material of the second metal layer is the same as the material of the first part, the third part, the fourth part and the sixth part and the thickness is the same.

[0016] Optionally, the material of the first metal layer includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; the material of the second metal layer and the materials of the first part, the third part, the fourth part and the sixth part include: aluminum or aluminum alloy.

[0017] Optionally, the electrode structure also includes: a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; a plurality of the first auxiliary electrode strips are located in the first spacing area and are connected to the first bus, and the first part and the first auxiliary electrode strips are staggered; a plurality of the second auxiliary electrode strips are located in the second spacing area and are connected to the second bus, and the fourth part and the second auxiliary electrode strips are staggered.

[0018] Optionally, there is a first center spacing dimension L1 between adjacent first parts or fourth parts along the second direction; there is a second center spacing dimension L2 between the first part and the adjacent sixth part or between the fourth part and the adjacent third part along the second direction, and the range of the second center spacing dimension L2 is: 0 to 0.1L1.

[0019] Correspondingly, the technical solution of the present invention also provides a method for forming a surface acoustic wave resonator device, comprising: providing a piezoelectric layer; forming an electrode structure on the piezoelectric layer; wherein forming the electrode structure comprises: forming a first bus and a second bus arranged in parallel along a first direction, wherein the first bus and the second bus have a first spacing area, a first slow area, an overlapping area, a second slow area and a second spacing area arranged in sequence along the first direction; forming a plurality of first electrode strips arranged in parallel along a second direction, wherein the first bus connects a plurality of the first electrode strips, and the first direction is perpendicular to the second direction; forming a plurality of second electrode strips arranged in parallel along the second direction, wherein the second bus connects a plurality of the second electrode strips, and the first electrode strips and the second electrode strips are staggered; wherein forming the first electrode strips comprises: forming a first part, a second part and a third part, wherein the second part comprises a first end and a second end opposite to each other, and the first part and the second electrode strips are staggered. The first end of the second part is connected, and the third part is connected to the second end of the second part; forming the second electrode strip includes: forming a fourth part, a fifth part and a sixth part, the fifth part includes opposite third and fourth ends, the fourth part is connected to the third end of the fifth part, and the sixth part is connected to the fourth end of the fifth part; there is a connection angle between the first part and the second part, between the second part and the third part, between the fourth part and the fifth part, and between the fifth part and the sixth part; wherein, the first part is located in the first spacing area, and the first part is connected to the first bus, the second part is located in the first slow area, the third part and the sixth part are located in the overlapping area, and along the second direction, the third part and the sixth part have a partial overlap, the fourth part is located in the second spacing area, and the fourth part is connected to the second bus, and the fifth part is located in the second slow area.

[0020] Optionally, the first part, the second part, the third part, the fourth part, the fifth part and the sixth part are all single-layer structures with the same material and the same thickness.

[0021] Optionally, the method for forming the first part, the second part, the third part, the fourth part, the fifth part and the sixth part includes: forming an electrode material layer on the piezoelectric layer; and performing graphing on the electrode material layer to form the first part, the second part, the third part, the fourth part, the fifth part and the sixth part.

[0022] Optionally, the thickness of the second part and the fifth part is respectively greater than the thickness of the first part, the third part, the fourth part and the sixth part.

[0023] Optionally, the first part, the third part, the fourth part and the sixth part are single-layer structures; the second part and the fifth part are double-layer structures.

[0024] Optionally, the second part and the fifth part respectively include: a first metal layer, and a second metal layer located on the first metal layer, and the material of the second metal layer is the same as the material of the first part, the third part, the fourth part and the sixth part and the thickness is the same.

[0025] Optionally, the method for forming the first part, the second part, the third part, the fourth part, the fifth part and the sixth part includes: forming a first electrode material layer on the piezoelectric layer; performing a first patterning process on the first electrode material layer to form the first metal layer; forming a second electrode material layer on the piezoelectric layer and the first metal layer; performing a second patterning process on the second electrode material layer to form the second metal layer, the first part, the third part, the fourth part and the sixth part, and forming the second part and the fifth part by the second metal layer and the first metal layer.

[0026] Optionally, forming the electrode structure also includes: forming a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; a plurality of the first auxiliary electrode strips are located in the first spacing area and are connected to the first bus, and the first part and the first auxiliary electrode strips are staggered; a plurality of the second auxiliary electrode strips are located in the second spacing area and are connected to the second bus, and the fourth part and the second auxiliary electrode strips are staggered.

[0027] Correspondingly, the technical solution of the present invention further provides a filter, characterized in that it includes: a surface acoustic wave resonator device as described in any one of the above items.

[0028] Correspondingly, the technical solution of the present invention further provides a duplexer, characterized in that it includes: the filter as described above.

[0029] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0030] In the surface acoustic wave resonator device of the technical solution of the present invention, by setting the first slow zone between the overlapping zone and the first spacer zone, and setting the second slow zone between the overlapping zone and the second spacer zone, the second part located in the first slow zone can reduce the propagation speed of the sound wave, and the fifth part located in the second slow zone can reduce the propagation speed of the sound wave, thereby forming a piston mode (piston mode) and effectively suppressing the high-order transverse parasitic modes generated in the overlapping zone.

[0031] Furthermore, the range of the connection angle is: 1° to 89°. When the range of the connection angle is 1° to 89°, part of the first portion, the second portion, and part of the third portion are located in the first slow zone and there is a projected overlapping area, thereby increasing the overall mass of the first slow zone and further reducing the propagation speed of the sound wave in the first slow zone; correspondingly, part of the fourth portion, the fifth portion, and part of the sixth portion are located in the second slow zone and there is a projected overlapping area, thereby increasing the overall mass of the second slow zone and further reducing the propagation speed of the sound wave in the second slow zone, thereby further suppressing the high-order transverse parasitic modes generated in the overlapping area.

[0032] Furthermore, the thickness of the second portion and the fifth portion is greater than the thickness of the first portion, the third portion, the fourth portion, and the sixth portion, respectively. By increasing the mass of the second portion and the fifth portion, the second portion and the fifth portion can more effectively reduce the propagation speed of the sound wave, thereby more effectively suppressing the transverse parasitic mode.

[0033] Furthermore, the electrode structure further includes: a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; the plurality of first auxiliary electrode strips are located in the first spacing area and connected to the first bus, with the first portion and the first auxiliary electrode strips being interlaced; and the plurality of second auxiliary electrode strips are located in the second spacing area and connected to the second bus, with the fourth portion and the second auxiliary electrode strips being interlaced. The plurality of first auxiliary electrode strips located in the first spacing area can reduce leakage of acoustic energy. Similarly, the plurality of second auxiliary electrode strips located in the second spacing area can reduce leakage of acoustic energy.

[0034] In the method for forming a surface acoustic wave resonator device of the technical solution of the present invention, by setting the first slow zone between the overlapping zone and the first spacer zone, and setting the second slow zone between the overlapping zone and the second spacer zone, the second part located in the first slow zone can be used to reduce the propagation speed of the sound wave, and the fifth part located in the second slow zone can be used to reduce the propagation speed of the sound wave, thereby forming a piston mode (piston mode) and effectively suppressing high-order lateral parasitic modes generated in the overlapping zone.

[0035] Furthermore, the thickness of the second portion and the fifth portion is greater than the thickness of the first portion, the third portion, the fourth portion, and the sixth portion, respectively. By increasing the mass of the second portion and the fifth portion, the second portion and the fifth portion can more effectively reduce the propagation speed of the sound wave, thereby more effectively suppressing the transverse parasitic mode.

[0036] Furthermore, forming the electrode structure further includes: forming a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; the plurality of first auxiliary electrode strips are located in the first spacing area and connected to the first bus, and the first portion and the first auxiliary electrode strips are interlaced; the plurality of second auxiliary electrode strips are located in the second spacing area and connected to the second bus, and the fourth portion and the second auxiliary electrode strips are interlaced. The plurality of first auxiliary electrode strips formed in the first spacing area can reduce leakage of acoustic energy. Similarly, the plurality of second auxiliary electrode strips formed in the second spacing area can reduce leakage of acoustic energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] 1 and 2 are schematic structural diagrams of a surface acoustic wave resonator device;

[0038] 3 to 6 are schematic structural diagrams of various steps of a method for forming a surface acoustic wave resonator device according to an embodiment of the present invention;

[0039] 7 is a schematic structural diagram of the steps of a method for forming a surface acoustic wave resonator device according to another embodiment of the present invention;

[0040] 8 and 9 are schematic structural diagrams of the steps of a method for forming a surface acoustic wave resonator device in another embodiment of the present invention.

[0041] 10 is a schematic structural diagram of a surface acoustic wave resonator device in another embodiment of the present invention;

[0042] FIG11 is a schematic structural diagram of a surface acoustic wave resonator device in another embodiment of the present invention. DETAILED DESCRIPTION

[0043] As described in the background art, surface acoustic wave resonator devices still have many problems, which will be described in detail below with reference to the accompanying drawings.

[0044] FIG1 and FIG2 are schematic structural diagrams of a surface acoustic wave resonator device.

[0045] Please refer to Figures 1 and 2. Figure 2 is a schematic diagram of the sound velocity along the AA line section in Figure 1, a piezoelectric layer 100; an electrode structure located on the piezoelectric layer 100, the electrode structure 100 includes a first bus 101 and a second bus 102 arranged in parallel along a first direction X, the first bus 101 connects a plurality of first electrode strips 103 arranged in parallel along a second direction Y, the second bus 102 connects a plurality of second electrode strips 104 arranged in parallel along the second direction Y, the first direction X is perpendicular to the second direction Y, the first electrode strips 103 and the second electrode strips 104 are staggered, the first electrode strip 103 includes a first portion 1031 and a second portion 1032 connected along the first direction X. The second electrode strip 104 includes a third portion 1041 and a fourth portion 1042 connected along the first direction X, the second portion 1032 and the third portion 1041 overlap in the second direction Y, and a first spacing area A1, an overlapping area B1 and a second spacing area A2 arranged along the first direction X are provided between the first bus 101 and the second bus 102, the overlapping area B1 is located between the first spacing area A1 and the second spacing area A2, the second portion 1032 and the third portion 1041 are located in the overlapping area B1, the first portion 1031 is located in the first spacing area A1, and the fourth portion 1042 is located in the second spacing area A2.

[0046] It should be noted that this embodiment also includes: a temperature compensation layer (not shown) located on the piezoelectric layer 100. The temperature compensation layer covers the electrode structure. The temperature compensation layer and the piezoelectric layer 100 have opposite temperature frequency shift characteristics, which can reduce the temperature coefficient of frequency (TCF) to 0 ppm / °C, thereby improving the drift of the operating frequency of the surface acoustic wave resonator with the operating temperature and achieving higher frequency-temperature stability. A surface acoustic wave resonator including a temperature compensation layer is called a temperature compensated surface acoustic wave resonator (i.e., a TC-SAW resonator).

[0047] In this embodiment, since the arrangement density of the first electrode strips 103 and the second electrode strips 104 on the overlapping area B1 is relatively large, the wave velocity on the overlapping area B1 is smaller than the wave velocity on the first spacing area A1 and the second spacing area A2. Therefore, the wave velocity difference between the overlapping area B1 and the first spacing area A1 and the second spacing area A2 is utilized to confine the main frequency energy of the resonant device in the overlapping area B1 to form a standing wave.

[0048] Please continue to refer to Figure 2. The sound velocity of the overlapping area B1 is smaller than the sound velocity of the first spacing area A1, and the sound velocity of the overlapping area B1 is also smaller than the sound velocity of the second spacing area A2. The sound velocity of the first spacing area A1 is equal to or similar to the sound velocity of the second spacing area A2. Among them, there is high-order sound wave energy in the overlapping area B1, and lateral parasitic resonance (spurious resonance) occurs, which in turn affects the performance of the resonant device.

[0049] On this basis, the present invention provides a surface acoustic wave resonator device and its formation method, a filter, and a duplexer. The second part located in the first slow zone can reduce the propagation speed of the sound wave, and the fifth part located in the second slow zone can reduce the propagation speed of the sound wave, thereby forming a piston mode (piston mode) and effectively suppressing the high-order lateral parasitic modes generated in the overlapping area.

[0050] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0051] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0052] 3 to 6 are schematic structural diagrams of the steps of a method for forming a surface acoustic wave resonant device according to an embodiment of the present invention; FIG10 is a schematic structural diagram of a surface acoustic wave resonant device according to another embodiment of the present invention; and FIG11 is a schematic structural diagram of a surface acoustic wave resonant device according to yet another embodiment of the present invention.

[0053] Referring to FIG. 3 , a piezoelectric layer 200 is provided.

[0054] The material of the piezoelectric layer 200 includes lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride, aluminum nitride alloy, gallium nitride or zinc oxide. In this embodiment, the material of the piezoelectric layer 200 is lithium niobate.

[0055] Please refer to FIG. 4 to FIG. 6 , FIG. 5 is a schematic cross-sectional view along line AA in FIG. 4 , and FIG. 6 is a schematic cross-sectional view along line BB in FIG. 4 . An electrode structure is formed on the piezoelectric layer 200 .

[0056] In this embodiment, forming the electrode structure includes: forming a first bus 201 and a second bus 202 arranged in parallel along a first direction X, wherein a first spacing area A1, a first slow area C1, an overlapping area B1, a second slow area C2, and a second spacing area A2 are sequentially arranged along the first direction X between the first bus 201 and the second bus 202; forming a plurality of first electrode strips 203 arranged in parallel along a second direction Y, wherein the first bus 201 connects the plurality of first electrode strips 203, and the first direction X is perpendicular to the second direction Y; and forming a plurality of first electrode strips 203 arranged in parallel along the second direction Y. The second electrode strips 204 are arranged in parallel in the Y direction, the second bus 202 connects a plurality of the second electrode strips 204, and the first electrode strips 203 and the second electrode strips 204 are arranged alternately; wherein forming the first electrode strips 203 includes: forming a first portion 2031, a second portion 2032 and a third portion 2033, the second portion 2032 includes a first end and a second end opposite to each other, the first portion 2031 is connected to the first end of the second portion 2032, and the third portion 2033 is connected to the second end of the second portion 2032; forming the second electrode strips 204 includes : forming a fourth portion 2041, a fifth portion 2042, and a sixth portion 2043, wherein the fifth portion 2042 includes a third end and a fourth end opposite to each other, the fourth portion 2041 is connected to the third end of the fifth portion 2042, and the sixth portion 2043 is connected to the fourth end of the fifth portion 2042; a connection angle α is formed between the first portion 2031 and the second portion 2032, between the second portion 2032 and the third portion 2033, between the fourth portion 2041 and the fifth portion 2042, and between the fifth portion 2042 and the sixth portion 2043; Among them, the first part 2031 is located in the first interval area A1, and the first part 2031 is connected to the first bus 201, the second part 2032 is located in the first slow area C1, the third part 2033 and the sixth part 2043 are located in the overlapping area B1, and along the second direction Y, the third part 2033 and the sixth part 2043 have a partial overlap, the fourth part 2041 is located in the second interval area A2, and the fourth part 2041 is connected to the second bus 202, and the fifth part 2042 is located in the second slow area C2.

[0057] In this embodiment, by setting the first slow zone C1 between the overlapping area B1 and the first spacer area A1, and setting the second slow zone C2 between the overlapping area B1 and the second spacer area A2, the second part 2032 formed in the first slow zone C1 can reduce the propagation speed of the sound wave, and the fifth part 2042 located in the second slow zone C2 can reduce the propagation speed of the sound wave, thereby forming a piston mode (piston mode), which effectively suppresses the high-order transverse parasitic modes generated in the overlapping area.

[0058] The range of the connection angle α is: 90° to 179°.

[0059] Please continue to refer to FIG. 4 , which shows a schematic diagram of the electrode structure in this embodiment where the connection angle α is 90°.

[0060] In other embodiments, please refer to FIG10 , which shows a schematic diagram of the electrode structure with a connection angle α of 135°.

[0061] In other embodiments, please refer to FIG. 11 , the connection angle α may also range from 1° to 89°, which specifically shows a schematic diagram of the electrode structure with a connection angle α of 45°.

[0062] When the connection angle α ranges from 1° to 89°, part of the first part 2031, the second part 2032 and part of the third part 2033 are located in the first slow zone C1 and there is a projected overlapping area, which increases the overall mass of the first slow zone C1 and further reduces the propagation speed of the sound wave in the first slow zone C1; correspondingly, part of the fourth part 2041, the fifth part 2042 and part of the sixth part 2043 are located in the second slow zone C2 and there is a projected overlapping area, which increases the overall mass of the second slow zone C2 and further reduces the propagation speed of the sound wave in the second slow zone C2, thereby further suppressing the high-order transverse parasitic modes generated in the overlapping area B1.

[0063] In this embodiment, the first portion 2031 , the second portion 2032 , the third portion 2033 , the fourth portion 2041 , the fifth portion 2042 , and the sixth portion 2043 are all single-layer structures made of the same material and having the same thickness.

[0064] In this embodiment, the method for forming the first part 2031, the second part 2032, the third part 2033, the fourth part 2041, the fifth part 2042 and the sixth part 2043 includes: forming an electrode material layer (not shown) on the piezoelectric layer 200; and performing graphing on the electrode material layer, the first part 2031, the second part 2032, the third part 2033, the fourth part 2041, the fifth part 2042 and the sixth part 2043.

[0065] In this embodiment, the materials of the first portion 2031 , the second portion 2032 , the third portion 2033 , the fourth portion 2041 , the fifth portion 2042 and the sixth portion 2043 include: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.

[0066] Please continue to refer to Figure 4. In this embodiment, there is a first center-to-center distance dimension L1 between adjacent first parts 2031 or the fourth parts 2041 along the second direction Y; there is a second center-to-center distance dimension L2 between the first part 2031 and the adjacent sixth part 2043 or between the fourth part 2041 and the adjacent third part 2033 along the second direction Y, and the range of the second center-to-center distance dimension L2 is: 0 to 0.1L1.

[0067] Correspondingly, an embodiment of the present invention further provides a surface acoustic wave resonator device, please continue to refer to Figures 4 to 6, comprising: a piezoelectric layer 200; an electrode structure located on the piezoelectric layer 200, the electrode structure comprising a first bus 201 and a second bus 202 arranged in parallel along a first direction X, the first bus 201 connecting a plurality of first electrode strips 203 arranged in parallel along a second direction Y, the second bus 202 connecting a plurality of second electrode strips 204 arranged in parallel along the second direction Y, the first direction X is perpendicular to the second direction Y, the first electrode strips 203 and the second electrode strips 204 are staggered; the first electrode strip 203 comprises a first portion 2031, a second portion 2032 and a third portion 2033, the second portion 2032 comprises a first end and a second end opposite to each other, the first portion 2031 is connected to the first end of the second portion 2032 The third portion 2033 is connected to the second end of the second portion 2032; the second electrode strip 204 includes a fourth portion 2041, a fifth portion 2042 and a sixth portion 2043, the fifth portion 2042 includes opposite third and fourth ends, the fourth portion 2041 is connected to the third end of the fifth portion 2042, and the sixth portion 2043 is connected to the fourth end of the fifth portion 2042; a connection angle α is formed between the first portion 2031 and the second portion 2032, between the second portion 2032 and the third portion 2033, between the fourth portion 2041 and the fifth portion 2042, and between the fifth portion 2042 and the sixth portion 2043; a first spacing area A1, a first slow area C1, an overlapping area B1, The second slow zone C2 and the second interval zone A2, the first part 2031 is located in the first interval zone A1, and the first part 2031 is connected to the first bus 201, the second part 2032 is located in the first slow zone C1, the third part 2033 and the sixth part 2043 are located in the overlapping area B1, and along the second direction Y, the third part 2033 and the sixth part 2043 have a partial overlap, the fourth part 2041 is located in the second interval zone A2, and the fourth part 2041 is connected to the second bus 202, and the fifth part 2042 is located in the second slow zone C2.

[0068] In this embodiment, by setting the first slow zone C1 between the overlapping area B1 and the first spacer area A1, and setting the second slow zone C2 between the overlapping area B1 and the second spacer area A2, the second part 2032 located in the first slow zone C1 can reduce the propagation speed of the sound wave, and the fifth part 2042 located in the second slow zone C2 can reduce the propagation speed of the sound wave, thereby forming a piston mode (piston mode), which effectively suppresses the high-order transverse parasitic modes generated in the overlapping area.

[0069] The range of the connection angle α is: 90° to 179°.

[0070] Please continue to refer to FIG. 4 , which shows a schematic diagram of the electrode structure in this embodiment where the connection angle α is 90°.

[0071] In other embodiments, please continue to refer to FIG10 , which shows a schematic diagram of the electrode structure with the connection angle α being 135°.

[0072] In other embodiments, please continue to refer to FIG. 11 , the connection angle α may also range from 1° to 89°, specifically showing a schematic diagram of the electrode structure with a connection angle α of 45°.

[0073] When the connection angle α is in the range of 1° to 89°, part of the first portion 2031, the second portion 2032 and part of the third portion 2033 are located in the first slow zone C1 and there is a projected overlapping area, which increases the overall mass of the first slow zone C1 and further reduces the propagation speed of the sound wave in the first slow zone C1; correspondingly, part of the fourth portion 2041, the fifth portion 2042 and part of the sixth portion 2043 are located in the second slow zone C2 and there is a projected overlapping area, which increases the overall mass of the second slow zone C2 and further reduces the propagation speed of the sound wave in the second slow zone C2, thereby further suppressing the high-order transverse parasitic modes generated in the overlapping area B1.

[0074] In this embodiment, the first portion 2031 , the second portion 2032 , the third portion 2033 , the fourth portion 2041 , the fifth portion 2042 , and the sixth portion 2043 are all single-layer structures made of the same material and having the same thickness.

[0075] In this embodiment, the materials of the first portion 2031 , the second portion 2032 , the third portion 2033 , the fourth portion 2041 , the fifth portion 2042 and the sixth portion 2043 include: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.

[0076] In this embodiment, there is a first center-to-center distance dimension L1 between adjacent first parts 2031 or the fourth parts 2041 along the second direction Y; there is a second center-to-center distance dimension L2 between the first part 2031 and the adjacent sixth part 2043 or between the fourth part 2041 and the adjacent third part 2033 along the second direction Y, and the range of the second center-to-center distance dimension L2 is: 0 to 0.1L1.

[0077] FIG. 7 is a structural diagram of each step of a method for forming a surface acoustic wave resonator device in another embodiment of the present invention.

[0078] This embodiment further describes a method for forming a surface acoustic wave resonator device based on the above embodiment (Figures 4 to 6). The difference from the above embodiment is that forming the electrode structure further includes forming a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips. This method will be described in detail below with reference to the accompanying drawings.

[0079] Please refer to FIG. 7 , which is viewed in the same direction as FIG. 4 , and a plurality of first auxiliary electrode strips 301 and a plurality of second auxiliary electrode strips 302 are formed.

[0080] In this embodiment, a plurality of first auxiliary electrode strips 301 are located in the first spacer area A1 and connected to the first bus bar 201, with the first portions 2031 and the first auxiliary electrode strips 301 interlaced. A plurality of second auxiliary electrode strips 302 are located in the second spacer area A2 and connected to the second bus bar 202, with the fourth portions 2041 and the second auxiliary electrode strips 302 interlaced. The plurality of first auxiliary electrode strips 301 formed in the first spacer area A1 can reduce acoustic energy leakage. Similarly, the plurality of second auxiliary electrode strips 302 formed in the second spacer area A2 can also reduce acoustic energy leakage.

[0081] Correspondingly, a surface acoustic wave resonant device is also provided in an embodiment of the present invention. Please continue to refer to Figure 7. The rest of the structures are the same as the surface acoustic wave resonant device recorded in the above embodiment. The difference is that the electrode structure also includes: a number of first auxiliary electrode strips 301 and a number of second auxiliary electrode strips 302; a number of the first auxiliary electrode strips 301 are located in the first spacing area A1 and are connected to the first bus 201, and the first part 2031 and the first auxiliary electrode strip 301 are staggered; a number of the second auxiliary electrode strips 302 are located in the second spacing area A2 and are connected to the second bus 202, and the fourth part 2041 and the second auxiliary electrode strip 302 are staggered.

[0082] In this embodiment, the first auxiliary electrode strips 301 located on the first spacing area A1 can reduce leakage of acoustic energy. Similarly, the second auxiliary electrode strips 302 located on the second spacing area A2 can reduce leakage of acoustic energy.

[0083] 8 and 9 are schematic structural diagrams of the steps of a method for forming a surface acoustic wave resonator device in another embodiment of the present invention.

[0084] This embodiment further describes a method for forming a surface acoustic wave resonator device based on the above embodiment (FIGS. 4 to 6). The difference from the above embodiment is that the thicknesses of the second portion 2032 and the fifth portion 2042 are respectively greater than the thicknesses of the first portion 2031, the third portion 2033, the fourth portion 2041, and the sixth portion 2043. This will be described in detail below with reference to the accompanying drawings.

[0085] Please refer to Figures 8 to 9. The viewing directions of Figures 8 and 5 are consistent, and the viewing directions of Figures 9 and 6 are consistent. The thicknesses of the second part 2032 and the fifth part 2042 are respectively greater than the thicknesses of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043.

[0086] In this embodiment, the first portion 2031 , the third portion 2033 , the fourth portion 2041 and the sixth portion 2043 are single-layer structures; the second portion 2032 and the fifth portion 2042 are double-layer structures.

[0087] In this embodiment, the second part 2032 and the fifth part 2042 respectively include: a first metal layer 401, and a second metal layer 402 located on the first metal layer 401, and the material of the second metal layer 402 is the same as the material of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043, and the thickness is the same.

[0088] In this embodiment, the method for forming the first part 2031, the second part 2032, the third part 2033, the fourth part 2041, the fifth part 2042 and the sixth part 2043 includes: forming a first electrode material layer (not shown) on the piezoelectric layer 200; performing a first graphic treatment on the first electrode material layer to form the first metal layer 401; forming a second electrode material layer (not shown) on the piezoelectric layer 200 and the first metal layer 401; performing a second graphic treatment on the second electrode material layer to form the second metal layer 402, the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043, and forming the second part 2032 and the fifth part 2042 from the second metal layer 402 and the first metal layer 401.

[0089] In this embodiment, the material of the first metal layer 401 includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; the material of the second metal layer 402 and the material of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043 include: aluminum or aluminum alloy.

[0090] In this embodiment, by increasing the mass of the second portion 2032 and the fifth portion 2042 , the second portion 2032 and the fifth portion 2042 can more effectively reduce the propagation speed of the sound wave, thereby more effectively suppressing the transverse parasitic mode.

[0091] Correspondingly, a surface acoustic wave resonator device is also provided in an embodiment of the present invention. Please continue to refer to Figures 8 and 9. The rest of the structure is the same as the surface acoustic wave resonator device recorded in the above embodiment, except that: the thickness of the second part 2032 and the fifth part 2042 is respectively greater than the thickness of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043.

[0092] In this embodiment, the first portion 2031 , the third portion 2033 , the fourth portion 2041 and the sixth portion 2043 are single-layer structures; the second portion 2032 and the fifth portion 2042 are double-layer structures.

[0093] In this embodiment, the second part 2032 and the fifth part 2042 respectively include: a first metal layer 401, and a second metal layer 402 located on the first metal layer 401, and the material of the second metal layer 402 is the same as the material of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043, and the thickness is the same.

[0094] In this embodiment, the material of the first metal layer 401 includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; the material of the second metal layer 402 and the material of the first part 2031, the third part 2033, the fourth part 2041 and the sixth part 2043 include: aluminum or aluminum alloy.

[0095] In this embodiment, by increasing the mass of the second portion 2032 and the fifth portion 2042 , the second portion 2032 and the fifth portion 2042 can more effectively reduce the propagation speed of the sound wave, thereby more effectively suppressing the transverse parasitic mode.

[0096] Correspondingly, an embodiment of the present invention further provides a filter, comprising: a surface acoustic wave resonator device as described in any one of the above embodiments.

[0097] Correspondingly, an embodiment of the present invention further provides a duplexer, comprising: the filter as described in the above embodiment.

[0098] It should be understood that the examples and embodiments herein are merely illustrative and that those skilled in the art may make various modifications and corrections without departing from the spirit and scope of the present invention as defined in this application and the appended claims.

Claims

1. A surface acoustic wave resonance device, characterized in that: include: Piezoelectric layer; an electrode structure located on the piezoelectric layer, the electrode structure comprising a first bus and a second bus arranged in parallel along a first direction, the first bus connecting a plurality of first electrode strips arranged in parallel along a second direction, the second bus connecting a plurality of second electrode strips arranged in parallel along the second direction, the first direction being perpendicular to the second direction, the first electrode strips and the second electrode strips being staggered; The first electrode strip comprises a first portion, a second portion and a third portion, the second portion comprises a first end and a second end opposite to each other, the first portion is connected to the first end of the second portion, and the third portion is connected to the second end of the second portion; The second electrode strip comprises a fourth portion, a fifth portion and a sixth portion, the fifth portion comprises a third end and a fourth end opposite to each other, the fourth portion is connected to the third end of the fifth portion, and the sixth portion is connected to the fourth end of the fifth portion; There is a connection angle between the first portion and the second portion, between the second portion and the third portion, between the fourth portion and the fifth portion, and between the fifth portion and the sixth portion; A first spacing area, a first slow area, an overlapping area, a second slow area and a second spacing area arranged in sequence along the first direction are provided between the first bus and the second bus, the first part is located in the first spacing area and is connected to the first bus, the second part is located in the first slow area, the third part and the sixth part are located in the overlapping area, and along the second direction, the third part and the sixth part have a partial overlap, the fourth part is located in the second spacing area and is connected to the second bus, and the fifth part is located in the second slow area.

2. The surface acoustic wave resonator device according to claim 1, characterized in that: The range of the connection angle is: 1° to 89°.

3. The surface acoustic wave resonator device according to claim 1, characterized in that: The range of the connection angle is: 90° to 179°.

4. The surface acoustic wave resonator device according to claim 1, characterized in that: The first portion, the second portion, the third portion, the fourth portion, the fifth portion and the sixth portion are all single-layer structures having the same material and the same thickness.

5. The surface acoustic wave resonator device according to claim 4, characterized in that: The materials of the first part, the second part, the third part, the fourth part, the fifth part and the sixth part include: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.

6. The surface acoustic wave resonator device according to claim 1, characterized in that: The thickness of the second portion and the fifth portion are respectively greater than the thickness of the first portion, the third portion, the fourth portion, and the sixth portion.

7. The surface acoustic wave resonator device according to claim 6, characterized in that: The first part, the third part, the fourth part and the sixth part are single-layer structures; the second part and the fifth part are double-layer structures.

8. The surface acoustic wave resonator device according to claim 7, characterized in that: The second part and the fifth part respectively include: a first metal layer and a second metal layer located on the first metal layer, and the material of the second metal layer is the same as that of the first part, the third part, the fourth part and the sixth part, and the thickness is the same.

9. The surface acoustic wave resonator device according to claim 8, characterized in that: The material of the first metal layer includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; the material of the second metal layer and the materials of the first part, the third part, the fourth part and the sixth part include: aluminum or aluminum alloy.

10. The surface acoustic wave resonator device according to claim 1, characterized in that: The electrode structure also includes: a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; a plurality of the first auxiliary electrode strips are located in the first spacing area and connected to the first bus, and the first part and the first auxiliary electrode strips are staggered; a plurality of the second auxiliary electrode strips are located in the second spacing area and connected to the second bus, and the fourth part and the second auxiliary electrode strips are staggered.

11. The surface acoustic wave resonator device according to claim 1, characterized in that: There is a first center distance dimension L1 between adjacent first parts or fourth parts along the second direction; there is a second center distance dimension L2 between the first part and the adjacent sixth part or between the fourth part and the adjacent third part along the second direction, and the range of the second center distance dimension L2 is: 0 to 0.1L1.

12. A method for forming a surface acoustic wave resonator device, characterized in that: include: providing a piezoelectric layer; An electrode structure is formed on the piezoelectric layer; wherein, Forming the electrode structure includes: A first bus and a second bus are formed which are arranged in parallel along a first direction, wherein a first spacing area, a first slow area, an overlap area, a second slow area and a second spacing area are sequentially arranged along the first direction between the first bus and the second bus; forming a plurality of first electrode strips arranged in parallel along a second direction, wherein the first bus connects the plurality of first electrode strips, and the first direction is perpendicular to the second direction; A plurality of second electrode strips are formed and arranged in parallel along the second direction, the second bus connects the plurality of second electrode strips, and the first electrode strips and the second electrode strips are placed alternately; wherein, Forming the first electrode strips comprises: forming a first portion, a second portion and a third portion, wherein the second portion includes a first end and a second end opposite to each other, the first portion is connected to the first end of the second portion, and the third portion is connected to the second end of the second portion; Forming the second electrode strips comprises: The fourth part, the fifth part and the sixth part are formed, wherein the fifth part includes a third end and a fourth end opposite to each other, the fourth part is connected to the third end of the fifth part, and the sixth part is connected to the The fourth end of the fifth portion is connected; There is a connection angle between the first part and the second part, between the second part and the third part, between the fourth part and the fifth part, and between the fifth part and the sixth part; wherein, The first part is located in the first interval area and is connected to the first bus, the second part is located in the first slow area, the third part and the sixth part are located in the overlap area, and along the second direction, the third part and the sixth part have a partial overlap, the fourth part is located in the second interval area and is connected to the second bus, and the fifth part is located in the second slow area.

13. The method for forming a surface acoustic wave resonator device according to claim 12, wherein: The first portion, the second portion, the third portion, the fourth portion, the fifth portion and the sixth portion are all single-layer structures having the same material and the same thickness.

14. The method for forming a surface acoustic wave resonator device according to claim 13, wherein: The method for forming the first part, the second part, the third part, the fourth part, the fifth part and the sixth part includes: forming an electrode material layer on the piezoelectric layer; and graphing the electrode material layer to form the first part, the second part, the third part, the fourth part, the fifth part and the sixth part.

15. The method for forming a surface acoustic wave resonator device according to claim 12, wherein: The thickness of the second portion and the fifth portion are respectively greater than the thickness of the first portion, the third portion, the fourth portion, and the sixth portion.

16. The method for forming a surface acoustic wave resonator device according to claim 15, wherein: The first part, the third part, the fourth part and the sixth part are single-layer structures; the second part and the fifth part are double-layer structures.

17. The method for forming a surface acoustic wave resonator device according to claim 16, wherein: The second part and the fifth part respectively include: a first metal layer and a second metal layer located on the first metal layer, and the material of the second metal layer is the same as that of the first part, the third part, the fourth part and the sixth part, and the thickness is the same.

18. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: The method for forming the first part, the second part, the third part, the fourth part, the fifth part and the sixth part includes: forming a first electrode material layer on the piezoelectric layer; performing a first patterning process on the first electrode material layer to form the first metal layer; forming a second electrode material layer on the piezoelectric layer and the first metal layer; performing a second patterning process on the second electrode material layer to form the second metal layer, the first part, the third part, the fourth part and the sixth part, and forming the second part and the fifth part by the second metal layer and the first metal layer.

19. The method for forming a surface acoustic wave resonator device according to claim 12, wherein: Forming the electrode structure also includes: forming a plurality of first auxiliary electrode strips and a plurality of second auxiliary electrode strips; a plurality of the first auxiliary electrode strips are located in the first spacing area and connected to the first bus, and the first part and the first auxiliary electrode strips are staggered; a plurality of the second auxiliary electrode strips are located in the second spacing area and connected to the second bus, and the fourth part and the second auxiliary electrode strips are staggered.

20. A filter, characterized in that: include: A surface acoustic wave resonator device as claimed in any one of claims 1 to 11.

21. A duplexer, characterized in that: include: The filter as claimed in claim 20.

Images