Bidirectional buck-boost direct-current solid-state transformer and control method and apparatus therefor, and medium

Abstract

Provided are a bidirectional buck-boost direct-current solid-state transformer (100) and a control method and apparatus therefor, and a medium. The bidirectional buck-boost direct-current solid-state transformer (100) comprises: a first semiconductor assembly (103), the first semiconductor assembly (103) being connected to a first connection end (101), and, when the voltage of a first direct-current power supply is greater than the voltage of a second direct-current power supply, the first semiconductor assembly (103) being used for adjusting a step-down coefficient between the first direct-current power supply and the second direct-current power supply; a second semiconductor assembly (104), the second semiconductor assembly (104) being connected to a second connection end (102), and, when the voltage of the first direct-current power supply is less than the voltage of the second direct-current power supply, the second semiconductor assembly (104) being used for adjusting a step-up coefficient between the first direct-current power supply and the second direct-current power supply; and an inductance assembly (105), the inductance assembly (105) being separately connected to the first semiconductor assembly (103) and the second semiconductor assembly (104), and the inductance assembly (105) storing electrical energy of the first direct-current power supply or the second direct-current power supply.

Description

Bidirectional buck-boost DC solid-state transformer and control method, device and medium thereof

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on August 15, 2023, with application number "202311020744.5" and application name "Bidirectional buck-boost DC solid-state transformer and its control method, device and medium", the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of transformer control technology, and in particular to a bidirectional buck-boost DC solid-state transformer and a control method, device, and medium thereof. Background Art

[0003] An energy storage system is a system that stores electrical energy through a power supply. The energy storage system includes multiple DC power supplies and DC transformers. The DC transformer is used to adjust the transmission voltage between multiple DC power supplies. However, current DC transformers have problems such as difficulty in adjusting the transformation coefficient and low transformation efficiency.

[0004] Summary of the Invention

[0005] The present application aims to at least solve the technical problems existing in the prior art or related art, such as difficulty in adjusting the transformation coefficient and low transformation efficiency.

[0006] To this end, the first aspect of the present application is to propose a bidirectional buck-boost DC solid-state transformer.

[0007] A second aspect of the present application is to propose a control method for a bidirectional buck-boost DC solid-state transformer.

[0008] The third aspect of the present application is to provide a control device for a bidirectional step-up / step-down DC solid-state transformer.

[0009] The fourth aspect of the present application is to provide another control device for a bidirectional buck-boost DC solid-state transformer.

[0010] A fifth aspect of the present application is to provide a readable storage medium.

[0011] In view of this, according to the first aspect of the present application, a bidirectional buck-boost DC solid-state transformer is proposed, which is used for voltage conversion between a first DC power supply and a second DC power supply. The bidirectional buck-boost DC solid-state transformer includes: a first connection end and a second connection end, the first connection end is used to connect to the first DC power supply, and the second connection end is used to connect to the second DC power supply; a first semiconductor component, the first semiconductor component is connected to the first connection end; when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component is used to adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply; a second semiconductor component, the second semiconductor component is connected to the second connection end; when the voltage of the first DC power supply is less than the voltage of the second DC power supply, the second semiconductor component is used to adjust the voltage boost coefficient between the first DC power supply and the second DC power supply; an inductor component, the inductor component is connected to the first semiconductor component and the second semiconductor component respectively, and the inductor component stores the electrical energy of the first DC power supply or the second DC power supply.

[0012] The bidirectional buck-boost DC solid-state transformer in the present technical solution includes a first semiconductor component and a second semiconductor component. When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the step-down coefficient between the first DC power supply and the second DC power supply is adjusted by the first semiconductor component. When the voltage of the first DC power supply is less than the voltage of the second DC power supply, the step-up coefficient between the first DC power supply and the second DC power supply is adjusted by the second semiconductor component. This greatly improves the adjustment efficiency of the transformation coefficient in the bidirectional buck-boost DC solid-state transformer, thereby improving the transformation efficiency of the bidirectional buck-boost DC solid-state transformer, and at the same time realizes the bidirectional buck-boost of the DC solid-state transformer, thereby expanding the application scope of the bidirectional buck-boost DC solid-state transformer.

[0013] According to a second aspect of the present application, a control method for a bidirectional buck-boost DC solid-state transformer is proposed. The bidirectional buck-boost DC solid-state transformer is a bidirectional buck-boost DC solid-state transformer in any of the above technical solutions. The bidirectional buck-boost DC solid-state transformer is used in an energy storage system. The energy storage system includes a first DC power supply, a second DC power supply and a bidirectional buck-boost DC solid-state transformer. The bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply, respectively. The control method for the bidirectional buck-boost DC solid-state transformer includes: obtaining a first transformation coefficient between the first DC power supply and the second DC power supply; obtaining a first temperature of a first semiconductor component and a second temperature of the second semiconductor component in the bidirectional buck-boost DC solid-state transformer; and adjusting the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient based on the first temperature and the second temperature.

[0014] The control method of the bidirectional buck-boost DC solid-state transformer in the present technical solution adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer and expanding the application range of the bidirectional buck-boost DC solid-state transformer.

[0015] According to a third aspect of the present application, a control device for a bidirectional buck-boost DC solid-state transformer is proposed. The bidirectional buck-boost DC solid-state transformer is the bidirectional buck-boost DC solid-state transformer in any of the above technical solutions. The bidirectional buck-boost DC solid-state transformer is used in an energy storage system. The energy storage system includes a first DC power supply, a second DC power supply and a bidirectional buck-boost DC solid-state transformer. The bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply, respectively. The control device for the bidirectional buck-boost DC solid-state transformer includes: an acquisition module, which is used to obtain a first transformation coefficient between the first DC power supply and the second DC power supply; the acquisition module is also used to obtain a first temperature of a first semiconductor component and a second temperature of the second semiconductor component in the bidirectional buck-boost DC solid-state transformer; and a control module, which is used to adjust the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

[0016] The control device of the bidirectional buck-boost DC solid-state transformer in the present technical solution adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer and expanding the application range of the bidirectional buck-boost DC solid-state transformer.

[0017] According to a fourth aspect of the present application, a control device for a bidirectional buck-boost DC solid-state transformer is provided, comprising a processor and a memory. The memory stores a program or instruction that, when executed by the processor, implements the steps of the bidirectional buck-boost DC solid-state transformer control method described in any of the aforementioned technical solutions. Therefore, the control device for a bidirectional buck-boost DC solid-state transformer possesses all the beneficial effects of the bidirectional buck-boost DC solid-state transformer control method described in any of the aforementioned technical solutions, and no further details are given herein.

[0018] According to a fifth aspect of the present application, a readable storage medium is provided, storing a program or instructions thereon. When executed by a processor, the program or instructions implement the control method for a bidirectional buck-boost DC solid-state transformer as described in any of the above-described technical solutions. Therefore, the readable storage medium possesses all the beneficial effects of the bidirectional buck-boost DC solid-state transformer control method described in any of the above-described technical solutions, and further description thereof is omitted here.

[0019] Additional aspects and advantages of the present application will become apparent in the following description or may be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0021] FIG1 shows one circuit diagram of a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0022] FIG2 shows a second circuit diagram of a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0023] FIG3 shows a third circuit diagram of a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0024] FIG4 shows a fourth circuit diagram of a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0025] FIG5 shows a fifth circuit diagram of a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0026] FIG6 shows a flow chart of a control method for a bidirectional buck-boost DC solid-state transformer according to an embodiment of the present application;

[0027] FIG7 shows a second flow chart of a control method for a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0028] FIG8 shows a third flow chart of a control method for a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0029] FIG9 shows one structural block diagram of a control device for a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0030] FIG10 shows a schematic diagram of a control device for a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0031] FIG11 shows a second structural block diagram of the control device for a bidirectional buck-boost DC solid-state transformer in an embodiment of the present application;

[0032] The corresponding relationship between the reference numerals and component names in Figures 1 to 5 is as follows:

[0033] 100 bidirectional buck-boost DC solid-state transformer, 101 first connection terminal, 102 second connection terminal, 103 first semiconductor component, 104 second semiconductor component, 105 inductor component, 1031 first semiconductor device, 1032 second semiconductor device, 1041 third semiconductor device, 1042 fourth semiconductor device, 1033 first insulated gate transistor, 1034 second insulated gate transistor, 1035 first diode, 1036 second diode, 1037 third insulated gate transistor, 1038 a fourth insulated gate transistor 1039, a third diode 1040, a fourth diode 1043, a fifth insulated gate transistor 1044, a sixth insulated gate transistor 1045, a fifth diode 1046, a sixth diode 1047, a seventh insulated gate transistor 1048, an eighth insulated gate transistor 1049, a seventh diode 1050, an eighth diode 1051, a first inductor 1052, a second inductor 1061, a first capacitor 1062, a second capacitor 1063, and a fourth capacitor 1064. DETAILED DESCRIPTION

[0034] In order to more clearly understand the above-mentioned objects, features and advantages of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features therein can be combined with each other in the absence of conflict.

[0035] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present application is not limited to the specific embodiments disclosed below.

[0036] 1 to 11 , the bidirectional buck-boost DC solid-state transformer and its control method, device, and medium provided in the embodiments of the present application are described in detail through specific embodiments and their application scenarios.

[0037] As shown in FIG1 , an embodiment of the present application provides a bidirectional buck-boost DC solid-state transformer 100 , which includes:

[0038] A first connection terminal 101 and a second connection terminal 102, wherein the first connection terminal 101 is used to connect to a first DC power supply, and the second connection terminal 102 is used to connect to a second DC power supply;

[0039] A first semiconductor component 103 , the first semiconductor component 103 is connected to the first connection terminal 101 ;

[0040] When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component 103 is used to adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply;

[0041] A second semiconductor component 104 , the second semiconductor component 104 being connected to the second connection terminal 102 ;

[0042] When the voltage of the first DC power source is lower than the voltage of the second DC power source, the second semiconductor component 104 is used to adjust the voltage boost coefficient between the first DC power source and the second DC power source;

[0043] The inductor component 105 is connected to the first semiconductor component 103 and the second semiconductor component 104 respectively. The inductor component 105 stores the electric energy of the first DC power supply or the second DC power supply.

[0044] In this embodiment, a bidirectional buck-boost DC solid-state transformer 100 is provided, wherein the bidirectional buck-boost DC solid-state transformer 100 is used for voltage conversion between a first DC power supply and a second DC power supply, and the first DC power supply and the second DC power supply are DC power supplies capable of storing electrical energy.

[0045] Exemplarily, the first DC power supply and the second DC power supply may be DC power supplies with different voltages.

[0046] The bidirectional buck-boost DC solid-state transformer 100 includes a first connection terminal 101 and a second connection terminal 102 , wherein the first connection terminal 101 is used to connect to a first DC power source, and the second connection terminal 102 is used to connect to a second DC power source.

[0047] For example, the first connection terminal 101 can serve as the input terminal of the bidirectional buck-boost DC solid-state transformer 100, and the second connection terminal 102 can serve as the output terminal of the bidirectional buck-boost DC solid-state transformer 100, transmitting the electric energy of the first DC power supply to the second DC power supply.

[0048] Illustratively, the first connection terminal 101 can serve as the output terminal of the bidirectional buck-boost DC solid-state transformer 100, and the second connection terminal 102 can serve as the input terminal of the bidirectional buck-boost DC solid-state transformer 100 to transmit the electrical energy of the second DC power supply to the first DC power supply.

[0049] The bidirectional buck-boost DC solid-state transformer 100 includes a first semiconductor component 103 and a second semiconductor component 104 , wherein the first semiconductor component 103 is connected to the first connection terminal 101 , and the second semiconductor component 104 is connected to the second connection terminal 102 .

[0050] It should be noted that when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the bidirectional buck-boost DC solid-state transformer 100 needs to reduce the voltage of the first DC power supply, and adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply through the first semiconductor component 103. When the voltage of the first DC power supply is less than the voltage of the second DC power supply, the bidirectional buck-boost DC solid-state transformer 100 needs to increase the voltage of the first DC power supply, and adjust the voltage increase coefficient between the first DC power supply and the second DC power supply through the second semiconductor component 104. The voltage reduction coefficient is the coefficient for reducing the voltage in the bidirectional buck-boost DC solid-state transformer 100, and the voltage increase coefficient is the coefficient for increasing the voltage in the bidirectional buck-boost DC solid-state transformer 100.

[0051] For example, when the voltage of the first DC power supply is 1000 volts and the voltage of the second DC power supply is 800 volts, the step-down coefficient of the bidirectional buck-boost DC solid-state transformer 100 is 0.8.

[0052] For example, when the voltage of the first DC power supply is 1000 volts and the voltage of the second DC power supply is 1200 volts, the boost coefficient of the bidirectional buck-boost DC solid-state transformer 100 is 1.2.

[0053] For example, the first semiconductor component 103 and the second semiconductor component 104 may be semiconductor components including insulated gate bipolar transistors.

[0054] The bidirectional buck-boost DC solid-state transformer 100 further includes an inductor component 105 , which is connected to the first semiconductor component 103 and the second semiconductor component 104 , respectively. The inductor component 105 stores electrical energy from the first DC power source or the second DC power source.

[0055] Exemplarily, the inductor component 105 may specifically include a plurality of inductors.

[0056] The bidirectional buck-boost DC solid-state transformer 100 in this embodiment includes a first semiconductor component 103 and a second semiconductor component 104. When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component 103 adjusts the step-down coefficient between the first DC power supply and the second DC power supply. When the voltage of the first DC power supply is less than the voltage of the second DC power supply, the second semiconductor component 104 adjusts the step-up coefficient between the first DC power supply and the second DC power supply. This greatly improves the adjustment efficiency of the transformation coefficient in the bidirectional buck-boost DC solid-state transformer 100, thereby improving the transformation efficiency of the bidirectional buck-boost DC solid-state transformer 100, and at the same time realizes the bidirectional buck-boost of the DC solid-state transformer, thereby expanding the application scope of the bidirectional buck-boost DC solid-state transformer 100.

[0057] In some embodiments, optionally, a bidirectional buck-boost DC solid-state transformer 100 is proposed. The first semiconductor component 103 includes a first semiconductor device 1031 and a second semiconductor device 1032. The step-down coefficient is a coefficient determined based on the ratio of the time length of the first semiconductor device 1031 in the on state and the time length of the off state and the on-off state of the second semiconductor device 1032. When the first semiconductor device 1031 is in the on state and the second semiconductor device 1032 is in the off state, the first semiconductor component 103 is used to connect the first connection terminal 101 and the second connection terminal 102. When the first semiconductor device 1031 is in the off state and the second semiconductor device 1032 is in the on state, the first semiconductor component 103 is used to connect the second semiconductor device 1032 and the second connection terminal 102.

[0058] The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042, and the boost coefficient is a coefficient determined according to the ratio of the time length of the third semiconductor device 1041 in the on state and the off state and the on-off state of the fourth semiconductor device 1042; when the third semiconductor device 1041 is in the on state and the fourth semiconductor device 1042 is in the off state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041; when the third semiconductor device 1041 is in the off state and the fourth semiconductor device 1042 is in the on state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection terminal 102.

[0059] In this embodiment, the first semiconductor component 103 includes a first semiconductor device 1031 and a second semiconductor device 1032. The bidirectional buck-boost DC solid-state transformer 100 determines the step-down coefficient by adjusting the ratio of the time period in which the first semiconductor device 1031 is in the on state and the off state and the on-off state of the second semiconductor device 1032.

[0060] For example, when the voltage reduction coefficient needs to be reduced, the duration during which the first semiconductor device 1031 is in the on state can be shortened, that is, the ratio of the duration during which the first semiconductor device 1031 is in the on state to the duration during which the first semiconductor device 1031 is in the off state can be reduced.

[0061] It should also be noted that the first semiconductor device 1031 and the second semiconductor device 1032 are devices that can be controlled to be on and off, and the state switching time of the first semiconductor device 1031 and the second semiconductor device 1032 is relatively fast, thereby ensuring the state switching speed of the bidirectional buck-boost DC solid-state transformer 100. For example, the state switching time of the first semiconductor device 1031 and the second semiconductor device 1032 can be specifically 5ms to 10ms.

[0062] Specifically, when the first semiconductor device 1031 is in the on state and the second semiconductor device 1032 is in the off state, the first semiconductor component 103 is used to connect the first connection end 101 and the second connection end 102; when the first semiconductor device 1031 is in the off state and the second semiconductor device 1032 is in the on state, the first semiconductor component 103 is used to connect the second semiconductor device 1032 and the second connection end 102.

[0063] For example, the second semiconductor device 1032 may include a diode device. When the first semiconductor device 1031 is in a disconnected state, the second semiconductor device 1032 is in a turned-on state through the diode device.

[0064] The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042. The bidirectional buck-boost DC solid-state transformer 100 determines the boost coefficient by adjusting the ratio of the time length of the third semiconductor device 1041 in the on state and the off state and the on-off state of the fourth semiconductor device 1042.

[0065] For example, when the boost coefficient needs to be reduced, the duration during which the third semiconductor device 1041 is in the on state can be shortened, that is, the ratio of the duration during which the third semiconductor device 1041 is in the on state to the duration during which the third semiconductor device 1041 is in the off state can be reduced.

[0066] It should also be noted that the third semiconductor device 1041 and the fourth semiconductor device 1042 are devices that can be controlled to be on and off, and the state switching time of the third semiconductor device 1041 and the fourth semiconductor device 1042 is relatively fast, thereby ensuring the state switching speed of the bidirectional buck-boost DC solid-state transformer 100. For example, the state switching time of the third semiconductor device 1041 and the fourth semiconductor device 1042 can be specifically 5ms to 10ms.

[0067] Specifically, when the third semiconductor device 1041 is in the on state and the fourth semiconductor device 1042 is in the off state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041; when the third semiconductor device 1041 is in the off state, the fourth semiconductor device 1042 is in the on state, and the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection terminal 102.

[0068] For example, the fourth semiconductor device 1042 may include a diode device, and when the third semiconductor device 1041 is in a turned-off state, the fourth semiconductor device 1042 is in a turned-on state through the diode device.

[0069] Illustratively, when the first semiconductor device 1031 and the third semiconductor device 1041 are in the on state and the fourth semiconductor device 1042 is in the off state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041; when the first semiconductor device 1031 is in the on state and the third semiconductor device 1041 is in the off state, the fourth semiconductor device 1042 is in the on state, and the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection terminal 102.

[0070] In the bidirectional buck-boost DC solid-state transformer 100 in this embodiment, the first semiconductor component 103 includes a first semiconductor device 1031 and a second semiconductor device 1032. The bidirectional buck-boost DC solid-state transformer 100 determines the step-down coefficient by adjusting the ratio of the time period when the first semiconductor device 1031 is in the on state and the off state and the on-off state of the second semiconductor device 1032. The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042. The bidirectional buck-boost DC solid-state transformer 100 determines the step-down coefficient by adjusting the ratio of the time period when the third semiconductor device 1041 is in the on state and the off state and the on-off state of the fourth semiconductor device 1042. This improves the adjustment efficiency of the transformation coefficient in the bidirectional buck-boost DC solid-state transformer 100, thereby improving the transformation efficiency of the bidirectional buck-boost DC solid-state transformer 100.

[0071] In some embodiments, optionally, a bidirectional buck-boost DC solid-state transformer 100 is proposed, wherein the first semiconductor device 1031 includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035, and a second diode 1036. The collector of the first insulated gate transistor 1033 is connected to the anode of the first connection terminal 101, the emitter of the second insulated gate transistor 1034 is connected to the cathode of the first connection terminal 101, the first diode 1035 and the first insulated gate transistor 1033 are connected in anti-parallel, and the second diode 1036 and the second insulated gate transistor 1034 are connected in anti-parallel.

[0072] The second semiconductor device 1032 includes a third insulated gate transistor 1037, a fourth insulated gate transistor 1038, a third diode 1039 and a fourth diode 1040, the collector of the third insulated gate transistor 1037 is connected to the emitter of the first insulated gate transistor 1033, the emitter of the fourth insulated gate transistor 1038 is connected to the collector of the second insulated gate transistor 1034, the emitter of the third insulated gate transistor 1037 is connected to the collector of the fourth insulated gate transistor 1038, the third diode 1039 and the third insulated gate transistor 1037 are connected in anti-parallel, and the fourth diode 1040 and the fourth insulated gate transistor 1038 are connected in anti-parallel.

[0073] In this embodiment, the first semiconductor device 1031 includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035 and a second diode 1036, the collector of the first insulated gate transistor 1033 is connected to the anode of the first connection terminal 101, the emitter of the second insulated gate transistor 1034 is connected to the cathode of the first connection terminal 101, the anode of the first diode 1035 is connected to the emitter of the first insulated gate transistor 1033, the cathode of the first diode 1035 is connected to the collector of the first insulated gate transistor 1033, the anode of the second diode 1036 is connected to the collector of the second insulated gate transistor 1034, and the cathode of the second diode 1036 is connected to the collector of the second insulated gate transistor 1034.

[0074] The second semiconductor device 1032 includes a third insulated gate transistor 1037, a fourth insulated gate transistor 1038, a third diode 1039 and a fourth diode 1040. The collector of the third insulated gate transistor 1037 is connected to the emitter of the first insulated gate transistor 1033, the emitter of the fourth insulated gate transistor 1038 is connected to the collector of the second insulated gate transistor 1034, the emitter of the third insulated gate transistor 1037 is connected to the collector of the fourth insulated gate transistor 1038, the anode of the third diode 1039 is connected to the emitter of the third insulated gate transistor 1037, the cathode of the third diode 1039 is connected to the collector of the third insulated gate transistor 1037, the anode of the fourth diode 1040 is connected to the collector of the fourth insulated gate transistor 1038, and the cathode of the fourth diode 1040 is connected to the collector of the fourth insulated gate transistor 1038.

[0075] Exemplarily, the first semiconductor component 103 also includes a first capacitor 1061 and a second capacitor 1062, one end of the first capacitor 1061 is connected to the anode of the first connection terminal 101, the other end of the first capacitor 1061 is connected to one end of the second capacitor 1062, and the other end of the second capacitor 1062 is connected to the cathode of the first connection terminal 101, and the first capacitor 1061 and the second capacitor 1062 are used for voltage stabilization and filtering.

[0076] In the bidirectional buck-boost DC solid-state transformer 100 in this embodiment, the first semiconductor device 1031 includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035 and a second diode 1036, and the second semiconductor device 1032 includes a third insulated gate transistor 1037, a fourth insulated gate transistor 1038, a third diode 1039 and a fourth diode 1040. The bidirectional buck-boost DC solid-state transformer 100 is realized by the first semiconductor device 1031 and the second semiconductor device 1032, thereby enriching the application scenarios of the bidirectional buck-boost DC solid-state transformer 100.

[0077] In some embodiments, optionally, a bidirectional buck-boost DC solid-state transformer 100 is provided, wherein the third semiconductor device 1041 includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045, and a sixth diode 1046. The emitter of the fifth insulated gate transistor 1043 is connected to the collector of the sixth insulated gate transistor 1044, the fifth diode 1045 and the fifth insulated gate transistor 1043 are connected in anti-parallel, and the sixth diode 1046 and the sixth insulated gate transistor 1044 are connected in anti-parallel.

[0078] The fourth semiconductor device 1042 includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049 and an eighth diode 1050, the collector of the seventh insulated gate transistor 1047 is connected to the anode of the second connection terminal 102, the emitter of the seventh insulated gate transistor 1047 is connected to the collector of the fifth insulated gate transistor 1043, the emitter of the eighth insulated gate transistor 1048 is connected to the cathode of the second connection terminal 102, the collector of the eighth insulated gate transistor 1048 is connected to the emitter of the seventh insulated gate transistor 1047, the seventh diode 1049 and the seventh insulated gate transistor 1047 are connected in anti-parallel, and the eighth diode 1050 and the eighth insulated gate transistor 1048 are connected in anti-parallel.

[0079] In this embodiment, the third semiconductor device 1041 includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045 and a sixth diode 1046, the emitter of the fifth insulated gate transistor 1043 is connected to the collector of the sixth insulated gate transistor 1044, the anode of the fifth diode 1045 is connected to the emitter of the fifth insulated gate transistor 1043, the cathode of the fifth diode 1045 is connected to the collector of the fifth insulated gate transistor 1043, the anode of the sixth diode 1046 is connected to the emitter of the sixth insulated gate transistor 1044, and the cathode of the sixth diode 1046 is connected to the collector of the sixth insulated gate transistor 1044.

[0080] The fourth semiconductor device 1042 includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049 and an eighth diode 1050, the collector of the seventh insulated gate transistor 1047 is connected to the anode of the second connection terminal 102, the emitter of the seventh insulated gate transistor 1047 is connected to the collector of the fifth insulated gate transistor 1043, the emitter of the eighth insulated gate transistor 1048 is connected to the cathode of the second connection terminal 102, the collector of the eighth insulated gate transistor 1048 is connected to the emitter of the seventh insulated gate transistor 1047, the anode of the seventh diode 1049 is connected to the emitter of the seventh insulated gate transistor 1047, the cathode of the seventh diode 1049 is connected to the collector of the seventh insulated gate transistor 1047, the anode of the eighth diode 1050 is connected to the emitter of the eighth insulated gate transistor 1048, and the cathode of the eighth diode 1050 is connected to the collector of the eighth insulated gate transistor 1048.

[0081] Exemplarily, the second semiconductor component 104 also includes a third capacitor 1063 and a fourth capacitor 1064, one end of the third capacitor 1063 is connected to the anode of the second connection terminal 102, the other end of the third capacitor 1063 is connected to one end of the fourth capacitor 1064, and the other end of the fourth capacitor 1064 is connected to the cathode of the second connection terminal 102, and the third capacitor 1063 and the fourth capacitor 1064 are used for voltage stabilization and filtering.

[0082] Exemplarily, the inductor component 105 may include a first inductor 1051 and a second inductor 1052, one end of the first inductor 1051 is connected to the emitter of the first insulated gate transistor 1033, the other end of the first inductor 1051 is connected to the emitter of the seventh insulated gate transistor 1047, one end of the second inductor 1052 is connected to the emitter of the second insulated gate transistor 1034, and the other end of the second inductor 1052 is connected to the emitter of the eighth insulated gate transistor 1048.

[0083] Exemplarily, the first insulated gate transistor 1033 and the third insulated gate transistor 1037 constitute a first IGBT module. When the first insulated gate transistor 1033 is in the on state, the third insulated gate transistor 1037 is in the off state. When the first insulated gate transistor 1033 is in the off state, the third insulated gate transistor 1037 is in the on state.

[0084] Exemplarily, the second insulated gate transistor 1034 and the fourth insulated gate transistor 1038 constitute a second IGBT module. When the second insulated gate transistor 1034 is in the on state, the fourth insulated gate transistor 1038 is in the off state. When the second insulated gate transistor 1034 is in the off state, the fourth insulated gate transistor 1038 is in the on state.

[0085] Exemplarily, the fifth insulated gate transistor 1043 and the seventh insulated gate transistor 1047 constitute a third IGBT module. When the fifth insulated gate transistor 1043 is in the on state, the seventh insulated gate transistor 1047 is in the off state. When the fifth insulated gate transistor 1043 is in the off state, the seventh insulated gate transistor 1047 is in the on state.

[0086] Exemplarily, the sixth insulated gate transistor 1044 and the eighth insulated gate transistor 1048 constitute a fourth IGBT module. When the sixth insulated gate transistor 1044 is in the on state, the eighth insulated gate transistor 1048 is in the off state. When the sixth insulated gate transistor 1044 is in the off state, the eighth insulated gate transistor 1048 is in the on state.

[0087] Exemplarily, the step-down process of the bidirectional buck-boost DC solid-state transformer 100 includes the following two states. In the first state, as shown in FIG2, when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on, the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on and form a path with the first inductor 1051, the second inductor 1052, the first capacitor 1061, the second capacitor 1062, the third capacitor 1063, the fourth capacitor 1064, the seventh diode 1049, and the eighth diode 1050. In the second state, as shown in FIG3, when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned off, the third diode 1039, the fourth diode 1040, the first inductor 1051, the second inductor 1052, the third capacitor 1063, the fourth capacitor 1064, the seventh diode 1049 and the eighth diode 1050 form a path, and the voltage U across the second semiconductor device 1032 is mid =U in ×α, α is the pressure reduction coefficient, 0≤α≤1, U in is the input voltage.

[0088] Exemplarily, the step-down process of the bidirectional buck-boost DC solid-state transformer 100 includes the following two states. In the first state, as shown in FIG4 , when the first insulated gate transistor 1033, the second insulated gate transistor 1034, the fifth insulated gate transistor 1043 and the sixth insulated gate transistor 1044 are turned on, the first insulated gate transistor 1033, the second insulated gate transistor 1034, the fifth insulated gate transistor 1043 and the sixth insulated gate transistor 1044 and the first inductor 1051, the second inductor 1052, the first capacitor 1061, The second capacitor 1062 forms a path. In the second state, as shown in FIG5 , when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on, the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on to form a path with the first inductor 1051, the second inductor 1052, the first capacitor 1061, the second capacitor 1062, the third capacitor 1063, the fourth capacitor 1064, the seventh diode 1049, and the eighth diode 1050. The output voltage U out =U mid ×β, β is the boost coefficient, β≥1, U mid is the voltage across the second semiconductor device 1032 .

[0089] For example, the output voltage U of the bidirectional buck-boost DC solid-state transformer 100 is out =U in ×α×β, α is the pressure reduction coefficient, β is the pressure increase coefficient, U in is the input voltage of the bidirectional buck-boost DC solid-state transformer 100.

[0090] In the bidirectional buck-boost DC solid-state transformer 100 in this embodiment, the third semiconductor device includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045, and a sixth diode 1046; the fourth semiconductor device includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049, and an eighth diode 1050. The bidirectional buck-boost DC solid-state transformer 100 is realized by the third semiconductor device 1041 and the fourth semiconductor device 1042, thereby enriching the application scenarios of the bidirectional buck-boost DC solid-state transformer 100.

[0091] The technical solution for the bidirectional buck-boost DC solid-state transformer control method provided in this application can be implemented by a control device, which can also be determined based on actual usage requirements and is not specifically limited here. To more clearly describe the bidirectional buck-boost DC solid-state transformer control method provided in this application, the following description uses the control device as the implementation entity.

[0092] As shown in FIG6 , an embodiment of the present application provides a control method for a bidirectional buck-boost DC solid-state transformer. The control method for a bidirectional buck-boost DC solid-state transformer includes:

[0093] Step 602: Obtain a first transformation coefficient between the first DC power supply and the second DC power supply;

[0094] Step 604, obtaining a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in a bidirectional buck-boost DC solid-state transformer;

[0095] Step 606: Adjust the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

[0096] In this embodiment, a control method for a bidirectional buck-boost DC solid-state transformer is provided, wherein the bidirectional buck-boost DC solid-state transformer is the bidirectional buck-boost DC solid-state transformer in the above embodiment, and the bidirectional buck-boost DC solid-state transformer is used in an energy storage system, which is an electric energy storage system including a first DC power supply, a second DC power supply, and a bidirectional buck-boost DC solid-state transformer, and the bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply, respectively.

[0097] For example, the energy storage system may be a new energy power energy storage system.

[0098] The control device obtains a first transformation coefficient between the first DC power supply and the second DC power supply, and obtains a first temperature of a first semiconductor component and a second temperature of the second semiconductor component in the bidirectional buck-boost DC solid-state transformer, wherein the first transformation coefficient is a coefficient determined according to the ratio of the voltage of the first DC power supply to the voltage of the second DC power supply, the first temperature is the real-time temperature of the first semiconductor component, and the second temperature is the real-time temperature of the second semiconductor component.

[0099] Exemplarily, when the first DC power supply is the input power supply and the second DC power supply is the output power supply, when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first transformation coefficient is a step-down coefficient; when the voltage of the first DC power supply is less than the voltage of the second DC power supply, the first transformation coefficient is a step-up coefficient.

[0100] The control device adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, wherein the second transformation coefficient is the transformation coefficient in the bidirectional buck-boost DC solid-state transformer.

[0101] It should be noted that the first semiconductor component and the second semiconductor component will generate heat during operation, thereby increasing the temperature. However, excessively high temperature will affect the operating performance of the bidirectional buck-boost DC solid-state transformer. By adjusting the conduction time of the first semiconductor component and the second semiconductor component, the first temperature of the first semiconductor component and the second temperature of the second semiconductor component can be reduced, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer.

[0102] The control method of the bidirectional buck-boost DC solid-state transformer in this embodiment adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer and expanding the application range of the bidirectional buck-boost DC solid-state transformer.

[0103] In some embodiments, optionally, as shown in FIG7 , a control method for a bidirectional buck-boost DC solid-state transformer includes:

[0104] Step 702: Obtain a first transformation coefficient between the first DC power supply and the second DC power supply;

[0105] Step 704: Acquire a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in a bidirectional buck-boost DC solid-state transformer;

[0106] Step 706: When the first temperature is greater than the second temperature, reduce the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient;

[0107] Step 708 : When the first temperature is lower than the second temperature, increase the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient.

[0108] In this embodiment, when the first temperature is greater than the second temperature, the control device reduces the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by reducing the conduction time ratio of the first semiconductor component, so that the second transformation coefficient is equal to the first transformation coefficient.

[0109] When the first temperature is lower than the second temperature, the control device increases the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by increasing the conduction time ratio of the second semiconductor component, so that the second transformation coefficient is equal to the first transformation coefficient.

[0110] Exemplarily, when the first temperature is equal to the second temperature, it indicates that the second transformation coefficient is equal to the first transformation coefficient.

[0111] The control method of the bidirectional buck-boost DC solid-state transformer in this embodiment reduces the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by reducing the conduction time ratio of the first semiconductor component when the first temperature is greater than the second temperature, so that the second transformation coefficient is equal to the first transformation coefficient. When the first temperature is lower than the second temperature, the control method increases the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by increasing the conduction time ratio of the second semiconductor component, so that the second transformation coefficient is equal to the first transformation coefficient, thereby ensuring the accuracy of the second transformation coefficient in the bidirectional buck-boost DC solid-state transformer and further ensuring the normal operation of the bidirectional buck-boost DC solid-state transformer.

[0112] In some embodiments, optionally, as shown in FIG8 , a control method for a bidirectional buck-boost DC solid-state transformer includes:

[0113] Step 802: Obtain a first transformation coefficient between the first DC power supply and the second DC power supply;

[0114] Step 804, obtaining a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in a bidirectional buck-boost DC solid-state transformer;

[0115] Step 806, adjusting the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature;

[0116] Step 808: Control the bidirectional buck-boost DC solid-state transformer to receive the power from the first DC power source, and transmit the power from the first DC power source to the second DC power source.

[0117] In this embodiment, when the first DC power supply is the input power supply, the control device controls the bidirectional buck-boost DC solid-state transformer to receive the electric energy of the first DC power supply and transmit the electric energy of the first DC power supply to the second DC power supply.

[0118] Illustratively, when the second DC power supply is the input power supply, the control device controls the bidirectional buck-boost DC solid-state transformer to receive the electric energy of the second DC power supply and transmit the electric energy of the second DC power supply to the first DC power supply.

[0119] The control method for the bidirectional buck-boost DC solid-state transformer in this embodiment controls the bidirectional buck-boost DC solid-state transformer to receive electric energy from a first DC power supply and transmit the electric energy from the first DC power supply to a second DC power supply, thereby ensuring electric energy transmission between the various power supplies within the energy storage system and improving the electric energy transmission efficiency of the energy storage system.

[0120] As shown in FIG9 , an embodiment of the present application provides a control device 900 for a bidirectional buck-boost DC solid-state transformer. The control device 900 for a bidirectional buck-boost DC solid-state transformer includes:

[0121] An acquisition module 902 is configured to acquire a first transformation coefficient between the first DC power supply and the second DC power supply;

[0122] The acquisition module 902 is further configured to acquire a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in the bidirectional buck-boost DC solid-state transformer;

[0123] The control module 904 is configured to adjust the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

[0124] In this embodiment, a control device 900 for a bidirectional buck-boost DC solid-state transformer is provided. The bidirectional buck-boost DC solid-state transformer is the bidirectional buck-boost DC solid-state transformer described in the above embodiment. The bidirectional buck-boost DC solid-state transformer is used in an energy storage system. The energy storage system is an electric energy storage system including a first DC power supply, a second DC power supply, and a bidirectional buck-boost DC solid-state transformer. The bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply, respectively.

[0125] For example, the energy storage system may be a new energy power energy storage system.

[0126] The acquisition module 902 acquires a first transformation coefficient between the first DC power supply and the second DC power supply, and acquires a first temperature of the first semiconductor component and a second temperature of the second semiconductor component in the bidirectional buck-boost DC solid-state transformer, wherein the first transformation coefficient is a coefficient determined according to the ratio of the voltage of the first DC power supply to the voltage of the second DC power supply, the first temperature is the real-time temperature of the first semiconductor component, and the second temperature is the real-time temperature of the second semiconductor component.

[0127] Exemplarily, when the first DC power supply is the input power supply and the second DC power supply is the output power supply, when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first transformation coefficient is a step-down coefficient; when the voltage of the first DC power supply is less than the voltage of the second DC power supply, the first transformation coefficient is a step-up coefficient.

[0128] The control module 904 adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, wherein the second transformation coefficient is the transformation coefficient in the bidirectional buck-boost DC solid-state transformer.

[0129] It should be noted that the first semiconductor component and the second semiconductor component will generate heat during operation, thereby increasing the temperature. However, excessively high temperature will affect the operating performance of the bidirectional buck-boost DC solid-state transformer. By adjusting the conduction time of the first semiconductor component and the second semiconductor component, the first temperature of the first semiconductor component and the second temperature of the second semiconductor component can be reduced, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer.

[0130] The control device 900 of the bidirectional buck-boost DC solid-state transformer in this embodiment adjusts the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, thereby ensuring the operating performance of the bidirectional buck-boost DC solid-state transformer and expanding the application range of the bidirectional buck-boost DC solid-state transformer.

[0131] In some embodiments, optionally, the control device 900 for the bidirectional buck-boost DC solid-state transformer further includes:

[0132] A control module 904 is configured to reduce a second transformation coefficient of the bidirectional buck-boost DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient when the first temperature is greater than the second temperature;

[0133] The control module 904 is configured to increase the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer when the first temperature is lower than the second temperature, so that the second transformation coefficient is equal to the first transformation coefficient.

[0134] For example, as shown in Figure 10, the bidirectional buck-boost DC solid-state transformer includes a left-side IGBT (Insulated Gate Bipolar Transistor) and a right-side IGBT. The control module 904 determines the buck-boost coefficient required by the bidirectional buck-boost DC solid-state transformer, then initializes the step-down coefficient and calculates the boost coefficient. When the temperature of the left IGBT is greater than that of the right IGBT, the step-down coefficient is reduced. When the temperature of the left IGBT is greater than that of the right IGBT, the step-down coefficient is increased. When the temperature of the left IGBT is equal to that of the right IGBT, the bidirectional buck-boost DC solid-state transformer is allowed to continue working.

[0135] The control device 900 of the bidirectional buck-boost DC solid-state transformer in this embodiment reduces the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by reducing the conduction time ratio of the first semiconductor component when the first temperature is greater than the second temperature, so that the second transformation coefficient is equal to the first transformation coefficient. When the first temperature is lower than the second temperature, the control device 900 increases the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer by increasing the conduction time ratio of the second semiconductor component, so that the second transformation coefficient is equal to the first transformation coefficient, thereby ensuring the accuracy of the second transformation coefficient in the bidirectional buck-boost DC solid-state transformer and further ensuring the normal operation of the bidirectional buck-boost DC solid-state transformer.

[0136] In some embodiments, optionally, the control device 900 for the bidirectional buck-boost DC solid-state transformer further includes:

[0137] The control module 904 is configured to control the bidirectional step-up / step-down DC solid-state transformer to receive the electric energy from the first DC power supply and transmit the electric energy from the first DC power supply to the second DC power supply.

[0138] The control device 900 of the bidirectional buck-boost DC solid-state transformer in this embodiment controls the bidirectional buck-boost DC solid-state transformer to receive power from the first DC power supply and transmit the power from the first DC power supply to the second DC power supply, thereby ensuring power transmission between the various power supplies within the energy storage system and improving the power transmission efficiency of the energy storage system.

[0139] In some embodiments, optionally, as shown in FIG11 , a bidirectional buck-boost DC solid-state transformer control device 1100 is proposed, including a processor 1102 and a memory 1104. Memory 1104 stores a program or instruction that, when executed by processor 1102, implements the steps of the bidirectional buck-boost DC solid-state transformer control method described in any of the aforementioned technical solutions. Therefore, the bidirectional buck-boost DC solid-state transformer control device 1100 has all the beneficial effects of the bidirectional buck-boost DC solid-state transformer control method described in any of the aforementioned technical solutions, and will not be further elaborated here.

[0140] In some embodiments, optionally, a readable storage medium is provided on which a program is stored. When the program is executed by a processor, the control method of the bidirectional buck-boost DC solid-state transformer in any of the above embodiments is implemented, thereby having all the beneficial technical effects of the control method of the bidirectional buck-boost DC solid-state transformer in any of the above embodiments.

[0141] The readable storage medium includes a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0142] It should be clarified that in the claims, specification and drawings of this application, the term "plurality" refers to two or more. Unless otherwise clearly defined, the orientation or positional relationship indicated by the terms "upper" and "lower" is based on the orientation or positional relationship shown in the drawings. It is only for the purpose of more conveniently describing this application and making the description process simpler, and is not intended to indicate or imply that the device or element referred to must have the specific orientation described, be constructed and operated in a specific orientation. Therefore, these descriptions cannot be understood as limitations on this application. The terms "connect", "install", "fix" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection between multiple objects, or a detachable connection between multiple objects, or an integral connection; it can be a direct connection between multiple objects, or an indirect connection between multiple objects through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood based on the specific circumstances of the above data.

[0143] In the claims, specification, and drawings of this application, the terms "one embodiment," "some embodiments," "a specific embodiment," and the like mean that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of this application. In the claims, specification, and drawings of this application, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0144] The above are merely preferred embodiments of the present application and are not intended to limit the present application. Those skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A bidirectional step-up / step-down DC solid-state transformer, wherein: The bidirectional buck-boost DC solid-state transformer is used for voltage conversion between the first DC power supply and the second DC power supply, and the bidirectional buck-boost DC solid-state transformer comprises: a first connection end and a second connection end, the first connection end being used to connect to the first DC power supply, and the second connection end being used to connect to the second DC power supply; a first semiconductor component, wherein the first semiconductor component is connected to the first connection end; When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component is used to adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply; a second semiconductor component, wherein the second semiconductor component is connected to the second connection terminal; When the voltage of the first DC power supply is lower than the voltage of the second DC power supply, the second semiconductor component is used to adjust the voltage boost coefficient between the first DC power supply and the second DC power supply; An inductor component, wherein the inductor component is connected to the first semiconductor component and the second semiconductor component respectively, and the inductor component stores electrical energy of the first DC power supply or the second DC power supply.

2. The bidirectional step-up / step-down DC solid-state transformer according to claim 1, wherein: The first semiconductor component includes a first semiconductor device and a second semiconductor device, and the voltage reduction coefficient is a coefficient determined according to the ratio of the time length of the first semiconductor device being in the on state and the off state and the on-off state of the second semiconductor device; when the first semiconductor device is in the on state and the second semiconductor device is in the off state, the first semiconductor component is used to connect the first connection end and the second connection end; when the first semiconductor device is in the off state and the second semiconductor device is in the on state, the first semiconductor component is used to connect the second semiconductor device and the second connection end; and / or The second semiconductor component includes a third semiconductor device and a fourth semiconductor device, and the boost coefficient is a coefficient determined according to the ratio of the duration of the third semiconductor device being in an on state and an off state and the on-off state of the fourth semiconductor device; When the third semiconductor device is in the on state and the fourth semiconductor device is in the off state, the second semiconductor component is used to connect the The first connection terminal and the third semiconductor device; when the third semiconductor device is in a disconnected state, the fourth semiconductor device is in a turned-on state, and the second semiconductor component is used to connect the first connection terminal and the second connection terminal.

3. The bidirectional step-up / step-down DC solid-state transformer according to claim 2, wherein: The first semiconductor device includes a first insulated gate transistor, a second insulated gate transistor, a first diode and a second diode, the collector of the first insulated gate transistor is connected to the anode of the first connection terminal, the emitter of the second insulated gate transistor is connected to the cathode of the first connection terminal, the first diode and the first insulated gate transistor are connected in anti-parallel, and the second diode and the second insulated gate transistor are connected in anti-parallel; The second semiconductor device includes a third insulated gate transistor, a fourth insulated gate transistor, a third diode and a fourth diode, the collector of the third insulated gate transistor is connected to the emitter of the first insulated gate transistor, the emitter of the fourth insulated gate transistor is connected to the collector of the second insulated gate transistor, the emitter of the third insulated gate transistor is connected to the collector of the fourth insulated gate transistor, the third diode and the third insulated gate transistor are connected in anti-parallel, and the fourth diode and the fourth insulated gate transistor are connected in anti-parallel.

4. The bidirectional step-up / step-down DC solid-state transformer according to claim 2, wherein: The third semiconductor device includes a fifth insulated gate transistor, a sixth insulated gate transistor, a fifth diode and a sixth diode, the emitter of the fifth insulated gate transistor is connected to the collector of the sixth insulated gate transistor, the fifth diode and the fifth insulated gate transistor are connected in anti-parallel, and the sixth diode and the sixth insulated gate transistor are connected in anti-parallel; The fourth semiconductor device includes a seventh insulated gate transistor, an eighth insulated gate transistor, a seventh diode and an eighth diode, the collector of the seventh insulated gate transistor is connected to the anode of the second connection terminal, the emitter of the seventh insulated gate transistor is connected to the collector of the fifth insulated gate transistor, the emitter of the eighth insulated gate transistor is connected to the cathode of the second connection terminal, the collector of the eighth insulated gate transistor is connected to the emitter of the seventh insulated gate transistor, the seventh diode and the seventh insulated gate transistor are connected in anti-parallel, and the eighth diode and the eighth insulated gate transistor are connected in anti-parallel.

5. A control method for a bidirectional step-up / step-down DC solid-state transformer, wherein: The bidirectional buck-boost DC solid-state transformer is a bidirectional buck-boost DC solid-state transformer according to any one of claims 1 to 4, and the bidirectional buck-boost DC solid-state transformer is used in an energy storage system, and the energy storage system includes a first DC power supply, a second DC power supply and the bidirectional buck-boost DC solid-state transformer, and the bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply respectively, and the control method of the bidirectional buck-boost DC solid-state transformer includes: Obtaining a first transformation coefficient between the first DC power supply and the second DC power supply; Acquire a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in the bidirectional buck-boost DC solid-state transformer; The second transformation coefficient of the bidirectional buck-boost DC solid-state transformer is adjusted to the first transformation coefficient according to the first temperature and the second temperature.

6. The control method of the bidirectional buck-boost DC solid-state transformer according to claim 5, wherein: The step of adjusting the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature includes: When the first temperature is greater than the second temperature, reducing the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient; When the first temperature is lower than the second temperature, the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer is increased so that the second transformation coefficient is equal to the first transformation coefficient.

7. The control method of the bidirectional buck-boost DC solid-state transformer according to claim 5 or 6, wherein: After the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer is adjusted to the first transformation coefficient, the method further includes: The bidirectional step-up / step-down DC solid-state transformer is controlled to receive the electric energy of the first DC power supply, and transmit the electric energy of the first DC power supply to the second DC power supply.

8. A control device for a bidirectional step-up / step-down DC solid-state transformer, wherein: The bidirectional buck-boost DC solid-state transformer is a bidirectional buck-boost DC solid-state transformer according to any one of claims 1 to 4, and is used in an energy storage system. The energy storage system includes a first DC power supply, a second DC power supply, and the bidirectional buck-boost DC solid-state transformer. The bidirectional buck-boost DC solid-state transformer is connected to the first DC power supply and the second DC power supply, respectively. The control device of the bidirectional buck-boost DC solid-state transformer includes: An acquisition module, used for acquiring a first transformation coefficient between the first DC power supply and the second DC power supply; The acquisition module is further used to acquire a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in the bidirectional buck-boost DC solid-state transformer; A control module is used to adjust the second transformation coefficient of the bidirectional buck-boost DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

9. A control device for a bidirectional step-up / step-down DC solid-state transformer, wherein: include: processor; A memory, wherein a program or instruction is stored in the memory, and when the processor executes the program or instruction in the memory, the processor implements the steps of the control method of the bidirectional buck-boost DC solid-state transformer according to any one of claims 5 to 7.

10. A readable storage medium, wherein: The readable storage medium stores a program or instruction, and when the program or instruction is executed by the processor, the steps of the control method of the bidirectional buck-boost DC solid-state transformer according to any one of claims 5 to 7 are implemented.

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