Resolution enhancement method in super-resolution lithography based on transient illumination

Abstract

The present disclosure provides a resolution enhancement method in super-resolution lithography based on transient illumination, comprising: S1, on the basis of mask parameters, optimally designing the wavelength of a light source under steady-state illumination and parameters of each film of a superlens; S2, performing imaging light field simulation under transient illumination on the basis of the parameters of each film, acquiring a transient illumination parameter corresponding to the center of a photoresist meeting an imaging contrast requirement under a target resolution and a total light field energy proportion being maximum, and confirming a corresponding exposure time period; S3, finely adjusting structural parameters of each film of the superlens under transient illumination by means of parameter scanning simulation, and acquiring structural optimization parameters of each film corresponding to the center of the photoresist meeting the imaging contrast requirement under the target resolution and the total light field energy proportion being maximum; and S4, performing imaging light field simulation on the basis of the transient illumination parameters, the exposure time period, and the structural optimization parameters of each film, determining whether an imaging effect meets an expectation or not, and if yes, taking the current parameter as a target parameter; and if not, repeating steps S1-S4 until the imaging effect meets the expectation.

Description

A method for enhancing resolution in super-resolution lithography based on transient illumination

[0001] This disclosure claims priority to Chinese patent application No. 202311030916.7, filed on August 15, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a method for enhancing the resolution of super-resolution lithography based on transient illumination. Background Art

[0003] In the modern complex integrated circuit manufacturing process, it is first necessary to design the integrated circuit mask, and then use photolithography technology to transfer the pattern to the wafer. Due to the limitations of the optical diffraction limit, the resolution of traditional photolithography can only reach half a wavelength. In order to improve the resolution of photolithography, the method of reducing the working wavelength or increasing the numerical aperture is usually adopted. At present, the mainstream photolithography system uses a 193-nanometer deep ultraviolet (DUV) wavelength light source and a 13.5-nanometer extreme ultraviolet (EUV) wavelength light source. Super-resolution photolithography technology based on surface plasmons can break through the optical diffraction limit and achieve finer photolithography resolution without shortening the wavelength of the exposure light source. Therefore, it is regarded as a feasible solution for advanced photolithography technology.

[0004] Super-resolution lithography based on surface plasmons relies on metalenses. Under ideal conditions of matched optical constants and zero loss, the metallens' imaging resolution is limitless. However, the inherent losses of the metal films that make up the metallens limit its actual imaging resolution. Earlier, researchers attempted to use gain media to compensate for the effects of material loss, but this approach proved difficult to apply to micro- and nanolithography.

[0005] Therefore, those skilled in the art urgently need a super-resolution lithography method with a high tolerance to metalens material loss, which can significantly enhance the lithography resolution under the condition of material loss in the metalens.

[0006] Summary of the Invention

[0007] (1) Technical issues to be solved

[0008] In response to the above problems, the present disclosure provides a super-resolution lithography resolution enhancement method based on transient illumination, which is used to solve technical problems such as the difficulty of traditional methods in significantly enhancing lithography resolution under the condition of material loss in the super lens.

[0009] (2) Technical solution

[0010] A first aspect of the present disclosure provides a method for enhancing the resolution of super-resolution lithography based on transient illumination, comprising: S1, optimizing and designing the wavelength of a light source and parameters of each film layer of a metalens under steady-state illumination according to mask parameters, wherein the parameters of each film layer of the metalens include at least material parameters and structural parameters; S2, performing imaging light field simulation under transient illumination according to the parameters of each film layer of the metalens, obtaining the transient illumination parameters corresponding to when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution, and confirming the corresponding exposure time period; S3, fine-tuning the structural parameters of each film layer of the metalens under transient illumination through parameter scanning simulation, obtaining the structural optimization parameters of each film layer of the metalens corresponding to when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution; S4, performing imaging light field simulation according to the transient illumination parameters, exposure time period, and structural optimization parameters of each film layer of the metalens, and judging whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations.

[0011] According to an embodiment of the present disclosure, each film layer of the super lens in S1 includes at least a mask, an air spacer layer, a metal layer and a photoresist layer.

[0012] According to the embodiments of the present disclosure, the superlens structure composed of the film layers of the superlens includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer, a metal reflective layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a photoresist layer, a metal reflective layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a surface metal layer, a photoresist layer, an intermediate metal layer, a dielectric layer and a bottom metal layer; or the superlens structure includes a mask, a metal-dielectric multilayer film, an air spacer layer, a photoresist layer and a metal reflective layer.

[0013] According to an embodiment of the present disclosure, the material of the metal layer is any one or more of gold, silver, aluminum, and copper.

[0014] According to an embodiment of the present disclosure, the design optimization method in S1 includes any one of a rigorous coupled wave analysis method, a finite difference time domain method, and a finite element method.

[0015] According to an embodiment of the present disclosure, S2 includes: S21, constructing transient illumination pulses with different attenuation rates according to the parameters of each film layer of the superlens; S22, using rigorous coupled wave analysis, time-domain finite difference method or finite element method to simulate the imaging light field; S23, calculating the proportion of total light field energy at the center of the photoresist under the target resolution to meet the imaging contrast requirements; S24, obtaining the transient illumination parameters corresponding to the maximum proportion of the total light field energy, and confirming the corresponding exposure time period.

[0016] According to an embodiment of the present disclosure, the imaging contrast in S23 is an average imaging contrast or an instantaneous imaging contrast; the imaging contrast requirement includes that the imaging contrast exceeds a preset value, and the preset value is 0.4.

[0017] According to an embodiment of the present disclosure, S3 includes: S31, fine-tuning the structural parameters of each film layer of the superlens obtained in S1 with a smaller step size; S32, performing imaging light field simulation using rigorous coupled wave analysis, time-domain finite difference method or finite element method; S33, calculating the total light field energy proportion of the photoresist center that meets the imaging contrast requirements under the target resolution; S34, obtaining the structural parameters of each film layer of the superlens corresponding to the maximum total light field energy proportion, as the optimization parameters of the film layer structure of the superlens.

[0018] According to an embodiment of the present disclosure, S4 includes: S41, performing imaging light field simulation based on transient illumination parameters, exposure time period and optimization parameters of each film layer structure of the super lens; S42, statistically integrating the light intensity distribution at the center of the photoresist during the exposure time period to obtain the imaging light field distribution in the photoresist; S43, calculating the imaging contrast of super-resolution lithography and confirming the imaging effect; S44, judging whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations.

[0019] According to an embodiment of the present disclosure, performing imaging light field simulation in S41 includes performing typical resolution pattern imaging simulation, wherein the typical resolution pattern includes one of a dense periodic line pattern and a finite root line pattern.

[0020] According to a second aspect of the present disclosure, a super-resolution lithography resolution enhancement system based on transient illumination is provided, comprising: a design module for optimizing the light source wavelength and the parameters of each film layer of a metalens under steady-state illumination according to mask parameters, wherein the parameters of each film layer of the metalens include at least material parameters and structural parameters; a simulation module for performing imaging light field simulation under transient illumination according to the parameters of each film layer of the metalens, obtaining the transient illumination parameters corresponding to the time when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution, and confirming the corresponding exposure time period; an acquisition module for fine-tuning the structural parameters of each film layer of the metalens under transient illumination through parameter scanning simulation, obtaining the structural optimization parameters of each film layer of the metalens corresponding to the time when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution; and a judgment module for performing imaging light field simulation according to the transient illumination parameters, exposure time period, and the structural optimization parameters of each film layer of the metalens, and judging whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating the above steps until the imaging effect meets expectations.

[0021] A third aspect of the present disclosure provides an electronic device, comprising: a processor; and a memory storing a computer-executable program, which, when executed by the processor, enables the processor to execute the above-mentioned method for enhancing resolution of super-resolution lithography based on transient illumination.

[0022] A fourth aspect of the present disclosure provides a computer-readable storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the method for enhancing the resolution of super-resolution lithography based on transient illumination as described above is implemented.

[0023] A fifth aspect of the present disclosure provides a computer program product, including a computer program, which implements the above-mentioned method for enhancing the resolution of super-resolution lithography based on transient illumination when executed by a processor. (3) Beneficial effects

[0024] The disclosed method for enhancing super-resolution lithography resolution based on transient illumination uses steady-state illumination as a basis to design the parameters of each metalens layer. Transient illumination replaces steady-state illumination to illuminate the metalens. By adjusting the surface plasmon mode dispersion at the metal-dielectric interface in the metalens, the metalens can enhance and transmit surface plasmon modes with larger transverse wave vectors, thereby achieving higher imaging lithography resolution. Furthermore, while maintaining the same lithography resolution, the working distance between the mask and the wafer can be extended, thereby reducing the stringent requirements of super-resolution lithography for mask / wafer surface shape, nano-gap detection, and environmental particle control. Furthermore, this method is highly compatible with existing super-resolution lithography technologies, with the primary difference being in the illumination aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] FIG1 schematically shows a flow chart of a method for enhancing resolution of super-resolution lithography based on transient illumination according to an embodiment of the present disclosure;

[0026] FIG2 schematically shows a structural diagram of a surface plasmon cavity metalens according to an embodiment of the present disclosure;

[0027] FIG3 schematically shows a schematic diagram of the increase in the transverse wave vector of the transient illumination dispersion curve according to an embodiment of the present disclosure;

[0028] FIG4 schematically shows the temporal envelope shape of the illumination pulse for a 22 nm half-period line pattern, the imaging contrast at different times, and the normalized imaging light field diagram according to Example 1 of the present disclosure;

[0029] FIG5 schematically shows a schematic diagram of a comparison of a steady-state and transient imaging photoresist cross-sectional light field and its cross-section for a 22 nm half-periodic line pattern according to Example 1 of the present disclosure;

[0030] FIG6 schematically shows a 22 nm half-periodic two-dimensional pattern periodically arranged along the x-direction and steady-state and transient imaging results according to Example 1 of the present disclosure;

[0031] FIG7 schematically shows the temporal envelope shape of the illumination pulse for a 45 nm half-periodic line pattern, the imaging contrast at different times, and the normalized imaging light field diagram according to Example 2 of the present disclosure;

[0032] FIG8 schematically shows the imaging contrast of a 45 nm half-periodic line pattern as a function of working distance according to Example 2 of the present disclosure, the cross-sectional light field results of steady-state imaging of a photoresist at two working distances of 20 nm and 40 nm, and a schematic diagram comparing the cross-sectional light field of a photoresist at a transient working distance of 40 nm with a cross-sectional line;

[0033] FIG9 schematically shows a block diagram of a super-resolution lithography resolution enhancement system based on transient illumination according to an embodiment of the present disclosure;

[0034] FIG10 schematically shows a block diagram of an electronic device suitable for implementing the method described above according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0035] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0037] Metalens material loss can cause inconsistent attenuation of information components at different spatial frequencies (i.e., transverse wave vectors) of the target object, leading to image field distortion at the focal plane and reduced imaging lithography resolution. Therefore, the present disclosure aims to provide a surface plasmon (SP) imaging lithography resolution enhancement method to reduce the limiting effect of metalens material loss on imaging lithography resolution.

[0038] The present disclosure provides a method for enhancing the resolution of super-resolution lithography based on transient illumination, as shown in FIG1 , comprising: S1, optimizing and designing the wavelength of a light source and parameters of each film layer of a metalens under steady-state illumination according to mask parameters, wherein the parameters of each film layer of the metalens include at least material parameters and structural parameters; S2, performing imaging light field simulation under transient illumination according to the parameters of each film layer of the metalens, obtaining the transient illumination parameters corresponding to when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution, and confirming the corresponding exposure time period; S3, fine-tuning the structural parameters of each film layer of the metalens under transient illumination through parameter scanning simulation, obtaining the structural optimization parameters of each film layer of the metalens corresponding to when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the largest proportion under the target resolution; S4, performing imaging light field simulation according to the transient illumination parameters, exposure time period, and structural optimization parameters of each film layer of the metalens, and judging whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations.

[0039] This transient illumination method is a resolution enhancement method based on steady-state illumination. To this end, the initial metalens structural parameters can be optimized and designed under steady-state illumination conditions. On this basis, the steady-state illumination is replaced with transient illumination. By adjusting the surface plasmon mode dispersion at the metal-dielectric interface in the metalens, the metalens can enhance and transmit surface plasmon modes with larger transverse wave vectors, thereby achieving higher imaging lithography resolution. This method reduces the limiting effect of metalens material loss on imaging lithography resolution to a certain extent, not only enhancing imaging lithography resolution, but also increasing the working distance between the mask and the wafer in super-resolution lithography. Among them, steady-state illumination refers to the commonly used illumination method for lithography using steady-state continuous light; transient illumination refers to the illumination method for lithography using transient pulsed light.

[0040] Based on the above embodiment, the film layers of the super lens in S1 include at least a mask, an air spacer layer, a metal layer, and a photoresist layer. The material of the metal layer is any one or more of gold, silver, aluminum, and copper.

[0041] The physical mechanism of surface plasmon-based super-resolution imaging lies in the fact that light waves incident on a metal surface can excite surface plasmon waves. The metal-dielectric multilayer film propagates these evanescent light waves, carrying information about the fine structure of the image, to the image plane, thereby achieving super-resolution imaging. The metal layer is at least one layer, and its materials include, but are not limited to, Au, Ag, Al, and Cu. Other metal materials that can excite surface plasmons may also be used in this disclosure.

[0042] On the basis of the above embodiments, the superlens structure composed of the film layers of the superlens includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer, a metal reflective layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a photoresist layer, a metal reflective layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer and a substrate; or the superlens structure includes a mask, an air spacer layer, a surface metal layer, a photoresist layer, an intermediate metal layer, a dielectric layer, and a bottom metal layer; or the superlens structure includes a mask, a metal-dielectric multilayer film, an air spacer layer, a photoresist layer, and a metal reflective layer.

[0043] Figure 2 shows one of the super-resolution lithography metalens structures, including a mask (SiO2+Cr), an air spacer layer (Air), a metal transmission layer (Ag), a photoresist (Pr), a metal reflective layer (Ag), and a substrate (SiO2).

[0044] On the basis of the above embodiment, the optimization design method in S1 includes any one of rigorous coupled wave analysis method, finite difference time domain method, and finite element method.

[0045] In steps S1, S2, S3 and S4, the simulation can be calculated using rigorous coupled wave (RCWA) and finite difference time domain (FDTD), finite element (FEM) and other methods. Specifically, for the steady-state imaging design of simple periodic line graphics in step S1, the RCWA method is preferably used for fast calculation. The transient imaging design in steps S2, S3, and S4 can use FDTD and FEM methods to optimize the structure and calculate the specific results. According to the actual simulation situation, FDTD is faster and the FDTD method is preferred. In the subsequent steps, the material parameters and structural parameters of each film layer of the super lens are optimized according to the line width of the mask pattern and the existing processing level to achieve basic imaging effects.

[0046] Based on the above embodiment, S2 includes: S21, constructing transient illumination pulses with different attenuation rates according to the parameters of each film layer of the superlens; S22, using rigorous coupled wave analysis, time-domain finite difference method or finite element method to simulate the imaging light field; S23, calculating the total light field energy proportion of the photoresist center under the target resolution to meet the imaging contrast requirements; S24, obtaining the transient illumination parameters corresponding to the maximum total light field energy proportion, and confirming the corresponding exposure time period.

[0047] The imaging improvement of transient illumination is related to the illumination of exponential decay. It is necessary to calculate the pulse decay and the corresponding imaging situation so that when the required resolution is reached, a higher pulse energy utilization rate is achieved. Specifically, the metalens structural parameters under the steady-state illumination optimized in step S1 are used to construct pulses with different decay rates, and the imaging light field simulation is performed using the finite difference time domain method (FDTD) or the finite element method (FEM). The total light field energy ratio when the center of the photoresist reaches the imaging contrast (e.g., 0.4) requirement under the target resolution is calculated to meet the imaging contrast requirement required for the normal positive photolithography. When it reaches the highest, it is the optimal transient illumination parameter, mainly considering the decay rate of the falling edge, and simultaneously confirming the corresponding exposure time period. Figure 3 is a schematic diagram of the transient illumination method for the transverse wave vector on a single metal-medium interface in the present disclosure. The pulsed light illumination with a decaying falling edge increases the transverse wave vector on the interface, and different falling edge decay rates γ correspond to different degrees of transverse wave vector growth. The present disclosure uses femtosecond pulse illumination metalens to optimize the transient illumination pulse time domain waveform to achieve finer imaging lithography resolution.

[0048] Based on the above embodiment, the imaging contrast in S23 is the average imaging contrast or the instantaneous imaging contrast; the imaging contrast requirement includes that the imaging contrast exceeds a preset value, and the preset value is 0.4.

[0049] In actual simulation calculation, the contrast ratio is generally calculated by the ratio of the difference between the maximum and minimum light intensity of the photoresist layer to the sum of the values, that is, C = (I max -I min ) / (I max +I min ) This method is also known as Michelson contrast. A higher contrast indicates a steeper pattern, meaning better resolution. For submicron patterns, a contrast ratio of greater than 0.4 is generally required for positive resist patterns, and greater than 0.2 for negative resist patterns.

[0050] The imaging contrast is judged by the moment when the average imaging contrast exceeds 0.4 as the starting time. Since the illumination pulse energy decreases rapidly and has no actual contribution to the subsequent imaging results, the instantaneous imaging contrast greater than 0.4 can also be used as the starting time (see the contrast variation with time curve in Figure 4 (b)) and the cut-off time can be ignored.

[0051] On the basis of the above embodiment, S3 includes: S31, fine-tuning the structural parameters of each film layer of the superlens obtained in S1 with a smaller step size; S32, performing imaging light field simulation using rigorous coupled wave analysis, time-domain finite difference method or finite element method; S33, calculating the total light field energy proportion that meets the imaging contrast requirement at the center of the photoresist under the target resolution; S34, obtaining the structural parameters of each film layer of the superlens corresponding to the maximum total light field energy proportion, as the optimization parameters of each film layer structure of the superlens.

[0052] The steady-state structural parameters optimized in step S1 are not necessarily suitable for the transient illumination parameters selected in S2. Based on steps S1 and S2, the metalens structural parameters are fine-tuned through parameter scanning simulation to further improve the total light field energy ratio when the center of the photoresist meets the imaging contrast requirement (0.4) under the target resolution. When the maximum value is reached, the optimized parameters of the metalens structure under transient illumination are obtained.

[0053] Based on the above embodiment, S4 includes: S41, performing imaging light field simulation based on transient illumination parameters, exposure time period, and optimized parameters of each film layer structure of the superlens; S42, statistically integrating the light intensity distribution at the center of the photoresist during the exposure time period to obtain the imaging light field distribution in the photoresist; S43, calculating the imaging contrast of super-resolution lithography and confirming the imaging effect; S44, determining whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations. The imaging light field simulation in S41 includes performing typical resolution pattern imaging simulation, wherein the typical resolution pattern includes one of a dense periodic line pattern and a finite root line pattern.

[0054] Using the obtained transient illumination parameters and the optimized parameters of the metalens structure, we simulated the imaging of dense periodic line patterns, finite-root line patterns, and other typical resolution patterns. We also calculated the imaging light field contrast to confirm the actual imaging effect. In some cases, phase shift may occur in the imaging, where the image plane imaging results of the periodic lines are opposite to the position distribution of the mask pattern, which is destructive to the imaging of non-periodic patterns. This is generally caused by improper selection of material parameters, leading to interference-like phenomena. Therefore, using contrast alone as an evaluation metric is not enough to fully represent the imaging quality, and feedback optimization based on the imaging results of the actual pattern is also required. When this occurs, you can directly return to S1 to redesign the parameters that have the most direct impact on imaging, such as the light source wavelength and film material thickness.

[0055] For surface plasmon-based super-resolution lithography, this disclosure significantly enhances imaging lithography resolution by replacing steady-state continuous light illumination with transient pulsed light illumination and optimizing the temporal pulse envelope shape of the pulsed light, thereby enabling the lithography of smaller feature sizes. Furthermore, while maintaining the same lithographic resolution, the working distance between the mask and wafer can be extended, reducing the stringent requirements of super-resolution lithography on mask / wafer surface shape, nano-gap detection, and environmental particle control. Furthermore, this method is highly compatible with existing super-resolution lithography technologies, with the primary difference being in the illumination aspect.

[0056] The present disclosure is further described below through specific embodiments. The above-mentioned super-resolution lithography resolution enhancement method based on transient illumination is specifically described in the following examples. However, the following examples are merely illustrative of the present disclosure and are not intended to limit the scope of the present disclosure.

[0057] The method for enhancing resolution of super-resolution lithography based on transient illumination disclosed in the present invention, as shown in FIG1 and FIG2 , comprises sequentially performing the following steps:

[0058] Step 1: Design the metalens structure under steady-state illumination. First, determine the material and light source. The main lens materials available for surface plasmon super-resolution lithography are one of the precious metals gold, silver, aluminum, and copper. Referring to traditional surface plasmon super-resolution lithography, the illumination center wavelength is set to 365nm, for example. Further optimization can be performed based on the center wavelength of the femtosecond laser. Based on the target lithographic resolution, combined with the light source wavelength and film material, and taking into account the process conditions, the metalens film layer structural parameters under steady-state continuous light illumination are designed to achieve better imaging lithography results in the steady state; this is equivalent to step S1 above.

[0059] Step 2: Design the pulse parameters of the transient illumination light source to achieve enhanced resolution and improved pulse energy utilization efficiency. Based on the film structure parameters determined in the previous step, construct pulses with different decay rates. These pulses are imported into the software as transient illumination light sources for transient simulation calculations. The total light field energy percentage of the time period with imaging contrast greater than 0.4 is calculated. The decay rate with the largest total light field energy percentage is selected as the transient light source pulse parameter, and this time period is determined as the exposure period. This is equivalent to step S2 above.

[0060] Step 3: Further optimize the metalens structural parameters under transient illumination. The steady-state structural parameters optimized in step S1 may not necessarily be suitable for the transient illumination pulse selected in S2. Fine-tune the structural parameters, i.e., the film thickness, in smaller steps near the steady-state structural parameters. The software is then used to calculate and optimize the structural parameters for maximum utilization of the pulse energy; this is equivalent to step S3 above.

[0061] Step 4: Calculate and verify the actual imaging results. Based on the film and light source parameters calculated in the parameter scan and the exposure time period obtained in the previous step, the software is imported to recalculate the specified exposure pattern. The integral of the light intensity distribution within the available time period in S2 is calculated to obtain the imaging light field in the photoresist. The super-resolution lithography imaging resolution is calculated and verified. For extended working distance requirements, if the energy at the moment the contrast requirement is met is low, the working distance can be appropriately reduced and recalculated; this is equivalent to step S4 above.

[0062] According to the above steps 1 to 4, two specific embodiments are provided below.

[0063] Example 1:

[0064] This embodiment shows the imaging result of exposing a smaller line width, i.e., a half-periodic line pattern of 22 nm. The implementation steps of this embodiment are as follows:

[0065] Step 1-1: Design a superlens structure under steady-state illumination. The superlens structure includes a mask, an air spacer layer, a metal layer, a photoresist layer, a metal reflective layer, and a substrate. Silver is selected as the lens material. The illumination center wavelength is set to 365 nm, and the center wavelength of the femtosecond laser can be selected for further optimization. The film layer parameters that need to be designed are the thickness of the air spacer layer, the surface silver layer, the photoresist layer, and the bottom silver layer. The imaging contrast under different film layer thickness combinations is calculated by parameter scanning using the RCWA method, and the thickness of the air spacer layer, the surface silver layer, the photoresist layer, and the bottom silver layer is obtained accordingly. In this embodiment, the thickness of the mask is set to 40 nm, the thickness of the air spacer layer is 15 nm, the thickness of the surface silver layer is 12 nm, the thickness of the photoresist layer is 15 nm, and the thickness of the bottom silver layer is 40 nm.

[0066] Step 1-2: Design the transient illumination pulse light parameters. Based on the film structure parameters determined in the previous step, construct pulses with varying decay rates. These pulses are then imported into the FDTD software for transient simulation as transient illumination sources. The energy fraction of the time period with an average contrast ratio greater than 0.4 is calculated. The decay rate with the highest energy fraction is selected as the light source pulse parameter, and this period is designated as the exposure period. Using a parameter sweep, a suitable exponential decay rate of 0.25 is optimized for the falling edge of the light pulse.

[0067] Figures 4 (a) through (c) show the pulse shape, normalized intensity, and contrast of transient imaging for a 22nm half-periodic line pattern, respectively. While transient illumination is indistinguishable from steady-state super-resolution lithography during the pulse's stable period, the average contrast is greater than 0.4 during the decay period, from 22.8 fs until the end of the pulse. This period represents the exposure period.

[0068] Steps 1-3: Optimize the metalens structural parameters under transient illumination. Fine-tune the structural parameters, i.e., the film thickness, in small steps near the steady-state parameters. Use FDTD software to calculate and optimize the structural parameters for maximum pulse energy utilization. This optimization step is omitted here to demonstrate the improvement in transient imaging compared to steady-state imaging under the same structural conditions.

[0069] Steps 1-4: Verify the resolution enhancement effect. Use the obtained transient illumination pulse light parameters and metalens structure parameters to perform imaging simulations of dense periodic line patterns, finite root line patterns, and other typical resolution patterns. Calculate the imaging light field contrast to confirm the actual imaging effect.

[0070] Figures 5 (a) and (b) show the results of steady-state and transient imaging of a 22nm linewidth, half-period, infinitely long line through a longitudinal cross-section of the photoresist from 22.8 fs until the pulse ends. Figure 5 (c) shows the corresponding normalized intensity result of a cross-section of the photoresist center, showing a significant improvement in resolution from 0.17 to 0.4.

[0071] Figure 6 (a) shows a two-dimensional pattern with a 22nm linewidth and a half-periodic pattern periodically arranged in the x-direction. Figures 6 (b) to (c) show the steady-state and transient imaging results, respectively. Consistent with the one-dimensional case, transient illumination can better resolve the pattern, demonstrating the present disclosure's ability to resolve even finer patterns.

[0072] Example 2:

[0073] This example shows the imaging results of an exposure of a 45nm half-periodic line pattern with an extended working distance. The implementation steps of this example are as follows:

[0074] Step 2-1: Design a superlens structure under steady-state illumination. The superlens structure includes a mask, an air spacer layer, a metal layer, a photoresist layer, a metal reflective layer, and a substrate. Silver is selected as the lens material. The illumination center wavelength is set to 365 nm, and can be selected according to the center wavelength of the femtosecond laser in further optimization. The film layer parameters that need to be designed are the thickness of the air spacer layer, the surface silver layer, the photoresist layer, and the bottom silver layer. The imaging contrast under different film layer thickness combinations is calculated by parameter scanning using the RCWA method, and the thickness of the air spacer layer, the surface silver layer, the photoresist layer, and the bottom silver layer is obtained accordingly. In this embodiment, the thickness of the mask is set to 40 nm, the thickness of the air spacer layer is 40 nm, the thickness of the surface silver layer is 12 nm, the thickness of the photoresist layer is 30 nm, and the thickness of the bottom silver layer is 40 nm.

[0075] Step 2-2: Design the transient illumination pulse light parameters. Based on the film structure parameters determined in the previous step, construct pulses with varying decay rates. These pulses are then imported into the FDTD software for transient simulation as transient illumination sources. The energy fraction of the time period with an average contrast ratio greater than 0.4 is calculated. The decay rate with the highest energy fraction is selected as the light source pulse parameter, and this period is designated as the exposure period. Using a parameter sweep, a suitable exponential decay rate of 0.25 is optimized for the falling edge of the light pulse.

[0076] Figures 7 (a) through (c) show the pulse shape, normalized intensity, and contrast of the transient illumination used for transient imaging of a 45nm half-period line. During the pulse stabilization period, transient illumination is similar to conventional surface plasmon lithography imaging and is indistinguishable. During the decay period, from 23.3 fs to the end of the pulse, the average contrast exceeds 0.4, which is considered a usable exposure period.

[0077] Step 2-3: Optimize the metalens structural parameters under transient illumination. Fine-tune the structural parameters, i.e., the film thickness, in small steps near the steady-state parameters. Use FDTD software to calculate and optimize the structural parameters for maximum pulse energy utilization. This optimization step is omitted here to demonstrate the improvement in transient imaging compared to steady-state imaging under the same structural conditions.

[0078] Step 2-4: Verify the resolution enhancement effect. Use the obtained transient illumination pulse light parameters and metalens structure parameters to perform imaging simulations of dense periodic line patterns, finite root line patterns, and other typical resolution patterns. Calculate the imaging light field contrast to confirm the actual imaging effect.

[0079] Figure 8 (a) is a graph showing the relationship between the steady-state imaging contrast of the center cross-section of the photoresist and the change in working distance. When the 20nm working distance continues to increase, only considering the contrast of the center cross-section of the photoresist cannot meet the imaging requirements. Figure 8 (b) to (c) are respectively the steady-state imaging results of the photoresist longitudinal section of the infinite length line of the 45nm half-period line at working distances of 20nm and 40nm. It can be seen that the 20nm working distance can be well imaged with a contrast of 0.47; after the working distance is extended to 40nm, the contrast of the photoresist center is 0.15, and it is obvious that the photoresist is not completely penetrated. Figure 8 (d) is the result of the normalized electric field intensity of the steady-state and transient imaging of the center cross-section of the photoresist at a working distance of 40nm. Figure 8 (e) is the corresponding transient imaging result when the working distance is 40nm. The contrast reaches 0.4 after 23.5fs, and the light field has good uniformity at different depths in the photoresist, showing the expansion of the working distance under the same structural parameters.

[0080] FIG9 schematically shows a block diagram of a super-resolution lithography resolution enhancement system based on transient illumination according to an embodiment of the present disclosure.

[0081] As shown in FIG. 9 , the system 900 includes a design module 910 , a simulation module 920 , an acquisition module 930 and a judgment module 940 .

[0082] Design module 910 is configured to optimize the light source wavelength and the parameters of each metalens layer under steady-state illumination based on the mask parameters. The parameters of each metalens layer include at least material parameters and structural parameters. According to embodiments of the present disclosure, design module 910 can, for example, be configured to execute step S1 described above with reference to FIG. 1 , and will not be further described here.

[0083] Simulation module 920 is configured to simulate the imaging light field under transient illumination based on the parameters of each film layer of the metalens, obtain the transient illumination parameters corresponding to when the center of the photoresist meets the imaging contrast requirement and the total light field energy accounts for the maximum at the target resolution, and determine the corresponding exposure time period. According to embodiments of the present disclosure, simulation module 920 can, for example, be used to execute step S2 described above with reference to FIG. 1 , and will not be further described here.

[0084] Acquisition module 930 is configured to fine-tune the structural parameters of each metalens layer under transient illumination through parameter sweep simulation, thereby obtaining the optimized structural parameters of each metalens layer corresponding to the target resolution at which the center of the photoresist meets the imaging contrast requirement and the total light field energy accounts for the maximum. According to embodiments of the present disclosure, acquisition module 930 can, for example, be used to execute step S3 described above with reference to FIG. 1 , and further description thereof will not be given here.

[0085] Determination module 940 is configured to perform imaging light field simulation based on the transient illumination parameters, exposure time period, and optimized parameters of each film layer structure of the metalens, and determine whether the imaging effect meets expectations. If so, the current parameters are set as target parameters; if not, the above steps are repeated until the imaging effect meets expectations. According to an embodiment of the present disclosure, determination module 940 can, for example, be used to execute step S4 described above with reference to FIG. 1 , and will not be further described here.

[0086] It should be noted that any one of the modules, submodules, units, and subunits according to the embodiments of the present disclosure, or at least part of the functions of any one of them, can be implemented in one module. Any one or more of the modules, submodules, units, and subunits according to the embodiments of the present disclosure can be split into multiple modules for implementation. Any one or more of the modules, submodules, units, and subunits according to the embodiments of the present disclosure can be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA), a system on a chip, a system on a substrate, a system on a package, an application specific integrated circuit (ASIC), or can be implemented by hardware or firmware of any other reasonable way of integrating or packaging the circuit, or implemented in any one of the three implementation modes of software, hardware, and firmware, or in an appropriate combination of any of them. Alternatively, one or more of the modules, submodules, units, and subunits according to the embodiments of the present disclosure can be at least partially implemented as a computer program module, which can perform the corresponding function when the computer program module is run.

[0087] For example, any multiple of the design module 910, the simulation module 920, the acquisition module 930, and the judgment module 940 can be combined into one module for implementation, or any one of the modules can be split into multiple modules. Alternatively, at least part of the functions of one or more of these modules can be combined with at least part of the functions of other modules and implemented in one module. According to an embodiment of the present disclosure, at least one of the design module 910, the simulation module 920, the acquisition module 930, and the judgment module 940 can be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA), a system on a chip, a system on a substrate, a system on a package, an application specific integrated circuit (ASIC), or can be implemented by hardware or firmware such as any other reasonable way of integrating or packaging the circuit, or implemented in any one of the three implementation methods of software, hardware, and firmware, or in an appropriate combination of any of them. Alternatively, at least one of the design module 910, the simulation module 920, the acquisition module 930, and the judgment module 940 can be at least partially implemented as a computer program module, which can perform the corresponding function when the computer program module is executed.

[0088] Figure 10 schematically shows a block diagram of an electronic device suitable for implementing the method described above according to an embodiment of the present disclosure. The electronic device shown in Figure 10 is only an example and should not bring any limitation to the functions and scope of use of the embodiment of the present disclosure.

[0089] As shown in Figure 10, the electronic device 1000 described in this embodiment includes: a processor 1001, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 1002 or a program loaded from a storage part 1008 into a random access memory (RAM) 1003. The processor 1001 may, for example, include a general-purpose microprocessor (such as a CPU), an instruction set processor and / or a related chipset and / or a special-purpose microprocessor (for example, an application-specific integrated circuit (ASIC)), etc. The processor 1001 may also include an onboard memory for caching purposes. The processor 1001 may include a single processing unit or multiple processing units for performing different actions of the method flow according to an embodiment of the present disclosure.

[0090] Various programs and data required for the operation of system 1000 are stored in RAM 1003. Processor 1001, ROM 1002, and RAM 1003 are connected to each other via bus 1004. Processor 1001 executes the various operations of the method flow according to the embodiment of the present disclosure by executing the programs in ROM 1002 and / or RAM 1003. It should be noted that the programs may also be stored in one or more memories other than ROM 1002 and RAM 1003. Processor 1001 may also execute the various operations of the method flow according to the embodiment of the present disclosure by executing the programs stored in one or more memories.

[0091] According to an embodiment of the present disclosure, electronic device 1000 may further include an input / output (I / O) interface 1005, which is also connected to bus 1004. System 1000 may also include one or more of the following components connected to I / O interface 1005: an input section 1006 including a keyboard, mouse, etc.; an output section 1007 including devices such as a cathode ray tube (CRT), a liquid crystal display (LCD), and speakers; a storage section 1008 including a hard disk; and a communication section 1009 including a network interface card such as a LAN card or a modem. Communication section 1009 performs communication processing via a network such as the Internet. A drive 1010 is also connected to I / O interface 1005 as needed. Removable media 1011, such as a magnetic disk, an optical disk, a magneto-optical disk, or a semiconductor memory, is installed in drive 1010 as needed, so that computer programs read from the removable media can be installed into storage section 1008 as needed.

[0092] According to an embodiment of the present disclosure, the method flow according to an embodiment of the present disclosure can be implemented as a computer software program. For example, an embodiment of the present disclosure includes a computer program product, which includes a computer program carried on a computer-readable storage medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from the network through the communication part 1009, and / or installed from the removable medium 1011. When the computer program is executed by the processor 1001, the above-mentioned functions defined in the system of the embodiment of the present disclosure are executed. According to an embodiment of the present disclosure, the system, equipment, device, module, unit, etc. described above can be implemented by a computer program module.

[0093] The present disclosure also provides a computer-readable storage medium, which may be included in the device / apparatus / system described in the above embodiments, or may exist independently and not incorporated into the device / apparatus / system. The computer-readable storage medium carries one or more programs that, when executed, implement the method for enhancing resolution in super-resolution lithography based on transient illumination according to the present disclosure.

[0094] According to an embodiment of the present disclosure, the computer-readable storage medium may be a non-volatile computer-readable storage medium, for example, may include but is not limited to: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In an embodiment of the present disclosure, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, apparatus, or device. For example, according to an embodiment of the present disclosure, the computer-readable storage medium may include the ROM 1002 and / or RAM 1003 described above and / or one or more memories other than ROM 1002 and RAM 1003.

[0095] Embodiments of the present disclosure also include a computer program product comprising a computer program containing program code for executing the method shown in the flowchart. When the computer program product is executed in a computer system, the program code causes the computer system to implement the method for enhancing resolution of super-resolution lithography based on transient illumination provided by the embodiments of the present disclosure.

[0096] The computer program executes the above functions defined in the system / device of the embodiment of the present disclosure when the processor 1001 executes the computer program. According to the embodiment of the present disclosure, the system, device, module, unit, etc. described above can be implemented by a computer program module.

[0097] In one embodiment, the computer program may be stored on a tangible storage medium such as an optical storage device or a magnetic storage device. In another embodiment, the computer program may be transmitted and distributed in the form of a signal on a network medium, downloaded and installed via the communication portion 1009, and / or installed from the removable medium 1011. The program code contained in the computer program may be transmitted using any appropriate network medium, including but not limited to wireless, wired, or any suitable combination thereof.

[0098] In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 1009, and / or installed from the removable medium 1011. When the computer program is executed by the processor 1001, the above-described functions defined in the system of the embodiment of the present disclosure are performed. According to the embodiment of the present disclosure, the systems, devices, means, modules, units, etc. described above can be implemented by computer program modules.

[0099] According to an embodiment of the present disclosure, the program code for executing the computer program provided by the embodiment of the present disclosure can be written in any combination of one or more programming languages. Specifically, these computer programs can be implemented using high-level procedural and / or object-oriented programming languages, and / or assembly / machine languages. Programming languages ​​include, but are not limited to, languages ​​such as Java, C++, python, "C" or similar programming languages. The program code can be executed entirely on the user computing device, partially on the user device, partially on a remote computing device, or entirely on a remote computing device or server. In cases involving a remote computing device, the remote computing device can be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computing device (for example, using an Internet service provider to connect via the Internet).

[0100] It should be noted that the functional modules in the various embodiments of the present disclosure can be integrated into one processing module, or each module can exist physically separately, or two or more modules can be integrated into one module. The above-mentioned integrated modules can be implemented in the form of hardware or in the form of software functional modules. If the integrated modules are implemented in the form of software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present disclosure, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product.

[0101] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the above-mentioned module, program segment, or a part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions. The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A method for enhancing the resolution of super-resolution lithography based on transient illumination, characterized in that: include: S1, optimizing and designing the wavelength of the light source and the parameters of each film layer of the metalens under steady-state illumination according to the mask parameters, wherein the parameters of each film layer of the metalens at least include material parameters and structural parameters; S2, performing imaging light field simulation under transient illumination according to the parameters of each film layer of the superlens, obtaining the transient illumination parameters corresponding to when the center of the photoresist meets the imaging contrast requirement under the target resolution and the total light field energy accounts for the largest proportion, and confirming the corresponding exposure time period; S3, fine-tuning the structural parameters of each film layer of the metalens under transient illumination through parameter scanning simulation, and obtaining the structural optimization parameters of each film layer of the metalens corresponding to the photoresist center meeting the imaging contrast requirement under the target resolution and the maximum proportion of the total light field energy; S4, performing imaging light field simulation according to the transient illumination parameters, the exposure time period and the optimized parameters of each film layer structure of the superlens to determine whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations.

2. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The film layers of the super lens in S1 at least include a mask, an air spacer layer, a metal layer and a photoresist layer.

3. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 2, characterized in that: The super lens structure composed of the film layers of the super lens includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer, a metal reflection layer and a substrate; or The super lens structure includes a mask, an air spacer layer, a photoresist layer, a metal reflective layer and a substrate; or The super lens structure includes a mask, an air spacer layer, a metal transmission layer, a photoresist layer and a substrate; or The super lens structure includes a mask, an air spacer layer, a surface metal layer, a photoresist layer, an intermediate metal layer, a dielectric layer, and a bottom metal layer; or The super lens structure includes a mask, a metal-dielectric multilayer film, an air spacer layer, a photoresist layer, and a metal reflective layer.

4. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 2, characterized in that: The material of the metal layer is any one or more of gold, silver, aluminum and copper.

5. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The optimization design method in S1 includes any one of rigorous coupled wave analysis, finite difference time domain method, and finite element method.

6. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The S2 includes: S21, constructing transient illumination pulses with different attenuation rates according to the parameters of each film layer of the superlens; S22, using rigorous coupled wave analysis, finite difference time domain method or finite element method to perform imaging light field simulation; S23, calculating the proportion of total light field energy that meets the imaging contrast requirement at the center of the photoresist at the target resolution; S24, obtaining the transient lighting parameters corresponding to the maximum proportion of the total light field energy, and confirming the corresponding exposure time period.

7. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 6, characterized in that: The imaging contrast in S23 is an average imaging contrast or an instantaneous imaging contrast; The imaging contrast requirement includes that the imaging contrast exceeds a preset value, and the preset value is 0.

4.

8. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The S3 includes: S31, fine-tuning the structural parameters of each film layer of the metalens obtained in S1 with a smaller step size; S32, performing imaging light field simulation using rigorous coupled wave analysis, finite difference time domain method or finite element method; S33, calculating the proportion of total light field energy that meets the imaging contrast requirement at the center of the photoresist at the target resolution; S34, obtaining the structural parameters of each film layer of the super lens corresponding to the maximum proportion of the total light field energy, as the structural optimization parameters of each film layer of the super lens.

9. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The S4 includes: S41, performing imaging light field simulation according to the transient illumination parameters, the exposure time period and the optimized parameters of each film layer structure of the super lens; S42, counting the integral result of the light intensity distribution at the center of the photoresist during the exposure time period to obtain the imaging light field distribution in the photoresist; S43, calculating the imaging contrast of super-resolution lithography and confirming the imaging effect; S44, judging whether the imaging effect meets expectations, if so, the current parameters are the target parameters; if not, repeating S1 to S4 until the imaging effect meets expectations.

10. The method for enhancing resolution of super-resolution lithography based on transient illumination according to claim 1, characterized in that: The imaging light field simulation in S41 includes performing typical resolution pattern imaging simulation, wherein the typical resolution pattern includes one of a dense periodic line pattern and a finite root line pattern.

11. A super-resolution lithography resolution enhancement system based on transient illumination, characterized in that: include: A design module, used for optimizing the wavelength of the light source and the parameters of each film layer of the metalens under steady-state illumination according to the mask parameters, wherein the parameters of each film layer of the metalens include at least material parameters and structural parameters; A simulation module is used to simulate the imaging light field under transient illumination according to the parameters of each film layer of the metalens, obtain the transient illumination parameters corresponding to when the center of the photoresist meets the imaging contrast requirements and the total light field energy accounts for the maximum under the target resolution, and confirm the corresponding exposure time segment; An acquisition module is used to fine-tune the structural parameters of each film layer of the metalens under transient illumination through parameter scanning simulation, and obtain the optimized structural parameters of each film layer of the metalens corresponding to the photoresist center meeting the imaging contrast requirement under the target resolution and the maximum proportion of the total light field energy; The judgment module is used to perform imaging light field simulation according to the transient illumination parameters, the exposure time period and the optimization parameters of each film layer structure of the super lens to judge whether the imaging effect meets expectations. If so, the current parameters are the target parameters; if not, the above steps are repeated until the imaging effect meets expectations.

12. An electronic device comprising: processor; A memory storing a computer executable program, which, when executed by the processor, enables the processor to execute the method for enhancing the resolution of super-resolution lithography based on transient illumination according to any one of claims 1 to 10.

13. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method for enhancing the resolution of super-resolution lithography based on transient illumination as claimed in any one of claims 1 to 10 is implemented.

14. A computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the method for enhancing the resolution of super-resolution lithography based on transient illumination according to any one of claims 1 to 10 is implemented.

Images