Ion-doped optical waveguide structure and use method therefor, and ion-doped optical waveguide array

Abstract

Disclosed in the present invention are an ion-doped optical waveguide structure and a use method therefor, and an ion-doped optical waveguide array. The ion-doped optical waveguide structure comprises: an optical waveguide; a doped region comprising a P-type doped region and an N-type doped region which are respectively disposed on two sides of the optical waveguide, the P-type doped region and the N-type doped region being isolated from each other; a plurality of electrodes disposed on the P-type doped region and the N-type doped region; and an electric signal adjusting circuit comprising a plurality of electric input ends and at least one electric output end, the electric input ends and the electric output end being connected to corresponding electrodes, respectively, and the electric signal adjusting circuit being used for adjusting the magnitudes of electric signals applied to the electrodes. According to the present invention, the ion-doped optical waveguide structure can be used as an optical phase shifter and / or an optical attenuator according to requirements, the use method is flexible, and the space of an optical chip is saved, so that the area of the chip is reduced, the cost is reduced, and the use requirements of various specific scenarios can be satisfied.

Description

Ion-doped optical waveguide structure and use method thereof, and ion-doped optical waveguide array Technical Field

[0001] The present invention relates to the field of optical integration technology, and in particular to an ion-doped optical waveguide structure and a use method thereof, and an ion-doped optical waveguide array. Background Art

[0002] In photonic integrated circuits (optical chips), by ion-doping optical waveguides made of semiconductor materials and applying electrical signals, properties such as the phase and intensity of light waves can be adjusted and controlled, thereby enabling optical signal processing. For example, in silicon photonic chips, ion-doping optical waveguides can be used to form active devices such as optical phase shifters and optical attenuators.

[0003] Figure 1 is a schematic diagram of an optical phase shifter in the prior art. The regions on both sides of the optical waveguide contain the same type of ion doping (P-type or N-type) and thus have resistance characteristics. In Figure 1, A and B are electrode regions, which may specifically include one or more layers of conductive metal, vias, ohmic contacts, etc. (not specifically shown in the figure), which are used to introduce external electrical signals into the ion-doped regions. Note: The optical waveguide cladding (such as commonly used silicon dioxide) is not shown in the figure. In actual applications, current can be generated by applying electrical signals V1 and GND at both ends of each resistor, as shown by the arrows in Figure 1, and the current direction is parallel to the direction of the optical waveguide. When current flows through the doped region to form a resistor, heat energy is generated and conducted to the optical waveguide, and then the refractive index of the optical waveguide is changed through the thermo-optical effect, so that the phase of the light wave propagating in the optical waveguide changes, thereby realizing the function of the optical phase shifter.

[0004] FIG2 is a schematic diagram of an optical attenuator of the prior art. The left and right regions of the optical waveguide (left and right directions shown in FIG2 ) are P-type and N-type ion doped, respectively, and thus have resistance characteristics. A and B in FIG2 are electrode regions, which may specifically include one or more layers of conductive metal, vias, ohmic contacts, etc. (not specifically shown in the figure), which are used to introduce external electrical signals into the ion-doped regions. In actual applications, by applying electrical signals V1 and GND to the P-type doped region and the N-type doped region, respectively, a current can be generated between the two doped regions, and the current direction is transverse (perpendicular to) the direction of the optical waveguide, as shown by the arrow in FIG2 . When the carriers (electrons and holes) in the current pass through the optical waveguide, they absorb light, thereby causing the intensity of the light wave propagating in the optical waveguide to change, thereby realizing the function of the optical attenuator.

[0005] Photonic integrated circuits typically require both optical phase shifters and optical attenuators. Depending on the needs, these devices may be used sequentially or simultaneously. Conventional practice involves placing these two devices at different locations within the photonic integrated circuit as needed. In large-scale multi-channel photonic integrated circuits, the number of optical phase shifters and attenuators required can be substantial, occupying significant space on the chip. This increases chip area and, in turn, costs.

[0006] Therefore, it is necessary to provide an ion-doped optical waveguide structure and a method of using the same, as well as an ion-doped optical waveguide array, to solve the above-mentioned problems existing in the prior art.

[0007] Summary of the Invention

[0008] The purpose of the present invention is to overcome the above-mentioned defects in the prior art and to provide an ion-doped optical waveguide structure and a method of using the same, as well as an ion-doped optical waveguide array.

[0009] To achieve the above object, the technical solution of the present invention is as follows:

[0010] The present invention provides an ion-doped optical waveguide structure, comprising:

[0011] optical waveguides;

[0012] doped regions, comprising a P-type doped region and an N-type doped region respectively provided on both sides of the optical waveguide, wherein the P-type doped region and the N-type doped region are isolated from each other;

[0013] a plurality of electrodes, wherein the electrodes are arranged on the P-type doping region and the N-type doping region;

[0014] An electrical signal conditioning circuit includes multiple electrical input terminals and at least one electrical output terminal. The electrical input terminals input corresponding electrical signals, and the electrical output terminals output electrical signals, thereby forming a circuit loop between the electrical input terminals and the electrical output terminals. The electrical input terminals and the electrical output terminals are respectively connected to the corresponding electrodes. The electrical signal conditioning circuit is used to adjust the size of the electrical signal applied to the electrodes.

[0015] Furthermore, there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely, a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the third electrode, the first electrical output terminal is connected to the second electrode, and the second electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is the same as or different from the voltage input to the second electrical input terminal.

[0016] Furthermore, there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely, a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the first electrical output terminal is connected to the third electrode, and the second electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is the same as the voltage input to the second electrical input terminal.

[0017] Furthermore, there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely, a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the first electrical output terminal is connected to the third electrode, and the second electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal.

[0018] Furthermore, there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are three electrical input terminals, namely, a first electrical input terminal, a second electrical input terminal and a third electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the third electrical input terminal is connected to the third electrode, and the electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is the same as the voltage input to the third electrical input terminal.

[0019] Furthermore, there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are three electrical input terminals, namely, a first electrical input terminal, a second electrical input terminal and a third electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the third electrical input terminal is connected to the third electrode, and the electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is greater than the voltage input to the third electrical input terminal.

[0020] Furthermore, there are three electrodes, namely, a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode is arranged in the middle of the N-type doping region; there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, and the electrical output terminal is connected to the third electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal.

[0021] Furthermore, the material of the optical waveguide includes bulk silicon, silicon-on-insulator, silicon-on-sapphire, aluminum oxide, indium phosphide, lithium niobate, barium titanate and polymer; the optical waveguide includes channel waveguide, ridge waveguide, slot waveguide, diffused waveguide and photonic crystal waveguide; the routing shape of the optical waveguide includes straight line and curved line; the operating wavelength range of the optical waveguide includes visible light band, O band, E band, S band, C band, L band, U band and mid-infrared band; multiple optical waveguides are located in the same layer, or respectively in corresponding multiple independent layers.

[0022] Furthermore, the P-type doping region and / or the N-type doping region have the same doping impurity concentration, or have a plurality of different doping impurity concentrations.

[0023] Furthermore, the electrical signal is a fixed voltage or an adjustable voltage; and the relative difference of the voltages inputted by each of the electrical input terminals is adjusted by the electrical signal adjustment circuit.

[0024] Furthermore, by using a "time division multiplexing" method, the voltage applied to the electrode is alternately adjusted by the electrical signal adjustment circuit in different time periods, so that the ion-doped optical waveguide can simultaneously realize the functions of an optical phase shifter and an optical attenuator.

[0025] The present invention also provides an ion-doped optical waveguide array, comprising:

[0026] a plurality of said ion-doped optical waveguides;

[0027] The ion-doped optical waveguides are arranged in sequence to form an array, and the doping types of the doping regions of any two adjacent ion-doped optical waveguides located on the same side are the same or opposite.

[0028] The present invention also provides a method for using the ion-doped optical waveguide, comprising:

[0029] The magnitude of the electric signal applied to the corresponding electrode is adjusted by the electric signal adjustment circuit, so that the ion-doped optical waveguide can realize the function of an optical phase shifter and / or an optical attenuator.

[0030] Furthermore, when there are four electrodes, namely a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at both ends of the P-type doping region, the third electrode and the fourth electrode are arranged at both ends of the N-type doping region, the number of the electrical input terminals is two, namely a first electrical input terminal and a second electrical input terminal, and the number of the electrical output terminals is two, namely a first electrical output terminal and a second electrical output terminal;

[0031] Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the third electrode, the first electrical output terminal to the second electrode, and the second electrical output terminal to the fourth electrode;

[0032] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal can be the same as or different from the voltage input to the second electrical input terminal. At this time, current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide, so that the ion-doped optical waveguide functions as an optical phase shifter.

[0033] Furthermore, when there are four electrodes, namely, a first electrode, a second electrode, a third electrode, and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; and there are two electrical output terminals, namely, a first electrical output terminal and a second electrical output terminal;

[0034] Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the first electrical output terminal to the third electrode, and the second electrical output terminal to the fourth electrode;

[0035] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal is the same as the voltage input to the second electrical input terminal. At this time, current flows across the optical waveguide in a direction perpendicular to the optical waveguide, that is, flows between the P-type doped region and the N-type doped region, so that the ion-doped optical waveguide realizes the function of an optical attenuator.

[0036] Furthermore, when there are four electrodes, they are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at both ends of the P-type doping region, the third electrode and the fourth electrode are arranged at both ends of the N-type doping region, the electrical input terminals are two, namely a first electrical input terminal and a second electrical input terminal, and the electrical output terminals are two, namely a first electrical output terminal and a second electrical output terminal;

[0037] Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the first electrical output terminal to the third electrode, and the second electrical output terminal to the fourth electrode;

[0038] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal. At this time, current flows through the P-type doped region in a direction parallel to the optical waveguide. Simultaneously, current also crosses the optical waveguide in a direction perpendicular to the optical waveguide, flowing from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously realize the functions of an optical phase shifter and an optical attenuator.

[0039] Furthermore, when there are four electrodes, namely, a first electrode, a second electrode, a third electrode, and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, the electrical input terminals are three, namely, a first electrical input terminal, a second electrical input terminal, and a third electrical input terminal, and the electrical output terminal is one;

[0040] connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the third electrical input terminal to the third electrode, and the electrical output terminal to the fourth electrode;

[0041] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is the same as the voltage input to the third electrical input terminal. At this time, current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide. Simultaneously, current also flows across the optical waveguide, from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously function as an optical phase shifter and an optical attenuator.

[0042] Furthermore, when there are four electrodes, namely, a first electrode, a second electrode, a third electrode, and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, the electrical input terminals are three, namely, a first electrical input terminal, a second electrical input terminal, and a third electrical input terminal, and the electrical output terminal is one;

[0043] connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the third electrical input terminal to the third electrode, and the electrical output terminal to the fourth electrode;

[0044] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is greater than the voltage input to the third electrical input terminal. At this time, current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide. Simultaneously, current also flows across the optical waveguide, from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously function as an optical phase shifter and an optical attenuator.

[0045] Furthermore, when there are three electrodes, namely a first electrode, a second electrode, and a third electrode, the first electrode and the second electrode are arranged at both ends of the P-type doping region, and the third electrode is arranged in the middle of the N-type doping region. There are two electrical input terminals, namely a first electrical input terminal and a second electrical input terminal, and there is one electrical output terminal.

[0046] connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, and the electrical output terminal to the third electrode;

[0047] The magnitude of the electrical signal input to the electrical signal conditioning circuit is adjusted so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal. At this time, current flows through the P-type doped region in a direction parallel to the optical waveguide. Simultaneously, current also flows across the optical waveguide in a direction perpendicular to the optical waveguide, from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously function as an optical phase shifter and an optical attenuator.

[0048] As can be seen from the above technical solution, the present invention designs an ion-doped optical waveguide structure so that only the same structure can be used to achieve both optical phase adjustment and optical intensity attenuation. Therefore, according to the needs of use, it can be used as an optical phase shifter alone, as an optical attenuator alone, or even realize the functions of an optical phase shifter and an optical attenuator at the same time. At the same time, the present invention can realize the two functions of adjusting the phase and attenuating the light intensity on the same ion-doped optical waveguide structure, thereby saving a lot of space on the chip, that is, reducing the chip area, and thus reducing costs. In addition, the present invention is flexible in use and can meet the use requirements of various specific scenarios, especially in multi-channel large-scale photonic integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] FIG1 is a schematic structural diagram of an optical phase shifter in the prior art;

[0050] FIG2 is a schematic structural diagram of an optical attenuator in the prior art;

[0051] FIG3 is a schematic diagram of an ion-doped optical waveguide structure not including an electrical signal conditioning circuit according to an embodiment of the present invention;

[0052] 4 to 9 are schematic diagrams of an ion-doped optical waveguide structure according to an embodiment of the present invention;

[0053] 10-11 are schematic structural diagrams of an ion-doped optical waveguide array according to an embodiment of the present invention;

[0054] FIG. 12 is a schematic diagram of an ion-doped optical waveguide structure with different doping concentrations according to an embodiment of the present invention. DETAILED DESCRIPTION

[0055] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0056] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0057] An embodiment of the present invention provides an ion-doped optical waveguide structure, comprising: an optical waveguide; a doped region, comprising a P-type doped region and an N-type doped region, respectively, disposed on either side of the optical waveguide, the P-type doped region and the N-type doped region being isolated from each other; a plurality of electrodes, the electrodes being disposed on the P-type doped region and the N-type doped region; an electrical signal conditioning circuit, comprising a plurality of electrical input terminals and at least one electrical output terminal, the electrical input terminals inputting corresponding electrical signals, and the electrical output terminals outputting electrical signals, thereby forming a circuit loop between the electrical input terminals and the electrical output terminals, the electrical input terminals and the electrical output terminals being respectively connected to corresponding electrodes, and the electrical signal conditioning circuit being used to regulate the magnitude of the electrical signals applied to the electrodes.

[0058] An embodiment of the present invention further provides a method for using an ion-doped optical waveguide, comprising: adjusting the magnitude of an electrical signal applied to a corresponding electrode through an electrical signal adjustment circuit, so that the ion-doped optical waveguide can function as an optical phase shifter and / or an optical attenuator.

[0059] In some embodiments of the present invention, the material of the optical waveguide includes, but is not limited to, bulk silicon, silicon-on-insulator, silicon-on-sapphire, aluminum oxide, indium phosphide, lithium niobate, barium titanate, and polymers. Optical waveguides include, but are not limited to, channel waveguides, ridge waveguides, slot waveguides, diffusion waveguides, and photonic crystal waveguides. Optical waveguides are not limited to straight waveguides but also include curved waveguides and waveguides of various curved types. The optical waveguide can be in a single layer or expanded into multiple layers. The material, height, number of layers, etc. of the conductive metal in the electrode region, the vias, etc. can be set as needed. The operating wavelength range of the optical waveguide includes, but is not limited to, the visible light band, O band, E band, S band, C band, L band, U band, and mid-infrared band.

[0060] Referring to Figure 3, in some embodiments of the present invention, the optical waveguide type is a ridge waveguide. The regions on the left and right sides of the optical waveguide (the left and right directions shown in Figure 2) contain P-type and N-type ion doping, respectively, and thus have resistance characteristics, forming a P-type doping region and an N-type doping region. The two ends of the P-type doping region are respectively provided with a first electrode A and a second electrode B, and the two ends of the N-type doping region are respectively provided with a third electrode C and a fourth electrode D. These four electrodes can specifically include one or more layers of conductive metal, vias, ohmic contacts, etc. (not specifically shown in the figure), which are used to introduce external electrical signals into the ion-doped region.

[0061] Referring to Figure 4, in some embodiments of the present invention, a first electrode A and a second electrode B are provided at both ends of the P-type doped region, and a third electrode C and a fourth electrode D are provided at both ends of the N-type doped region. The electrical input terminals are the first and second electrical input terminals, respectively, and the electrical output terminals are the first and second electrical output terminals, respectively. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the third electrode C, the first electrical output terminal is connected to the second electrode B, and the second electrical output terminal is connected to the fourth electrode D. In actual use, electrical signals V1 and GND are applied to the first and second electrodes A and B, and electrical signals V2 and GND are applied to the third and fourth electrodes C and D. An electrical signal conditioning circuit controls the magnitude of the electrical signals input to the first and second electrical input terminals. The voltage input to the first electrical input terminal is regulated to be the same as or different from the voltage input to the second electrical input terminal. That is, V1 can be equal to V2 (i.e., the same electrical signal V1 is applied to the first and third electrodes C), or V1 can be different from V2. In this case, current can be generated. As shown by the arrows in Figure 4, current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide. When resistance is formed, heat energy is generated and conducted to the optical waveguide. The refractive index of the optical waveguide is changed through the thermo-optical effect, causing the phase of the light wave propagating in the optical waveguide to change, thus realizing the function of an optical phase shifter.

[0062] The magnitude of the voltage applied to each electrode can be set and adjusted as needed by the electrical signal conditioning circuit, thereby producing different current intensities and achieving different functions to meet specific needs. For example, in the embodiment shown in Figure 4, by adjusting the relative difference between the voltage V1 input to the first electrical input terminal and the voltage V2 input to the second electrical input terminal, the amount of heating on both sides of the optical waveguide can be different, thereby producing different heat diffusion effects on both sides of the optical waveguide, which can be used for certain specific applications.

[0063] Referring to Figure 5 , in some embodiments of the present invention, a first electrode A and a second electrode B are provided at either end of the P-type doped region, and a third electrode C and a fourth electrode D are provided at either end of the N-type doped region. The electrical input terminals are the first and second electrical input terminals, respectively, and the electrical output terminals are the first and second electrical output terminals, respectively. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the second electrode B, the first electrical output terminal is connected to the third electrode C, and the second electrical output terminal is connected to the fourth electrode D. In actual use, a common electrical signal V1 is applied to the first and second electrodes A and B, and an electrical signal GND is applied to the third and fourth electrodes C and D. This generates a current between the P-type and N-type doped regions. As shown by the arrows in Figure 5 , the current flows perpendicularly across the optical waveguide, from the P-type doped region to the N-type doped region. As the current carriers pass through the optical waveguide, they absorb light, causing the intensity of the light waves propagating through the waveguide to change, thereby achieving the function of an optical attenuator. The device is a carrier injection type optical attenuator.

[0064] When it is necessary to use an optical phase shifter and an optical attenuator successively, the required voltage signals can be applied successively to the first electrode A, the second electrode B, the third electrode C, and the fourth electrode D, such as the embodiments of FIG. 4 and FIG. 5 , which are used successively as an optical phase shifter and an optical attenuator, respectively.

[0065] In some embodiments of the present invention, a "time division multiplexing" method can be used to alternately apply required voltage signals to the first electrode A, the second electrode B, the third electrode C, and the fourth electrode D in different time periods, so that they can be used almost synchronously as optical phase shifters and optical attenuators.

[0066] Referring to Figure 6, in some embodiments of the present invention, a first electrode A and a second electrode B are provided at both ends of the P-type doped region, and a third electrode C and a fourth electrode D are provided at both ends of the N-type doped region. The electrical input terminals are respectively the first electrical input terminal and the second electrical input terminal, and the electrical output terminals are respectively the first electrical output terminal and the second electrical output terminal. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the second electrode B, the first electrical output terminal is connected to the third electrode C, and the second electrical output terminal is connected to the fourth electrode D. In actual use, electrical signals V1 and V2 are applied to the first electrode A and the second electrode B, respectively, and an electrical signal GND is applied to the third electrode C and the fourth electrode D. The electrical signal regulation circuit controls the magnitude of the electrical signals input to the first electrical input terminal and the second electrical input terminal, adjusting the voltage input to the first electrical input terminal to be greater than the voltage input to the second electrical input terminal, i.e., V1>V2. As shown by the arrows in Figure 6, current flows parallel to the optical waveguide through the P-type doped region, generating heat energy that is transferred to the optical waveguide. This, in turn, changes the refractive index of the optical waveguide through the thermo-optical effect, causing the phase of the light wave propagating in the optical waveguide to change, thus realizing the function of an optical phase shifter. Simultaneously, current also flows perpendicularly across the optical waveguide, from the P-type doped region to the N-type doped region. This absorbs light, causing the intensity of the light wave propagating in the optical waveguide to change, thus realizing the function of an optical attenuator. Therefore, this embodiment can be used as both an optical phase shifter and an optical attenuator.

[0067] Referring to Figure 7, in some embodiments of the present invention, a first electrode A and a second electrode B are provided at both ends of the P-type doped region, and a third electrode C and a fourth electrode D are provided at both ends of the N-type doped region. The electrical input terminals are the first, second, and third electrical input terminals, respectively, and there is one electrical output terminal. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the second electrode B, the third electrical input terminal is connected to the third electrode C, and the electrical output terminal is connected to the fourth electrode D. In actual use, an electrical signal V1 is applied to the first electrode A, the same electrical signal V2 is applied to the second and third electrodes B and C, and an electrical signal GND is applied to the electrical output terminal. The electrical signal regulation circuit controls the magnitude of the electrical signals input to the first, second, and third electrical input terminals, adjusting the voltage input to the first electrical input terminal to be greater than the voltage input to the second and third electrical input terminals, i.e., V1>V2. As shown by the arrows in Figure 7, current flows parallel to the optical waveguide through the P-type and N-type doped regions, generating heat that is transferred to the waveguide. This, in turn, changes the refractive index of the waveguide through the thermo-optical effect, causing the phase of the light wave propagating in the waveguide to change, thus realizing the function of an optical phase shifter. Simultaneously, current also flows across the waveguide from the P-type doped region to the N-type doped region, meaning that current also flows between the two doped regions. This absorbs light, causing the intensity of the light wave propagating in the waveguide to change, thus realizing the function of an optical attenuator. Therefore, this embodiment can be used as both an optical phase shifter and an optical attenuator.

[0068] Referring to Figure 8, in some embodiments of the present invention, a first electrode A and a second electrode B are provided at both ends of the P-type doped region, and a third electrode C and a fourth electrode D are provided at both ends of the N-type doped region. The electrical input terminals are respectively a first electrical input terminal, a second electrical input terminal, and a third electrical input terminal, and there is one electrical output terminal. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the second electrode B, the third electrical input terminal is connected to the third electrode C, and the electrical output terminal is connected to the fourth electrode D. In actual use, electrical signals V1, V2, and V3 are applied to the first electrode A, the second electrode B, and the third electrode C, respectively, and an electrical signal GND is applied to the electrical output terminal. The electrical signal conditioning circuit controls the magnitude of the electrical signals input to the first, second, and third electrical input terminals, adjusting the voltage input to the first electrical input terminal to be greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal to be greater than the voltage input to the third electrical input terminal, i.e., V1>V2>V3. As shown by the arrows in Figure 8 , current flows through the P-type doped region between the first electrode A and the second electrode B, and the N-type doped region between the third electrode C and the fourth electrode D. This generates heat energy that is conducted to the optical waveguide, changing the refractive index of the optical waveguide and thus realizing the function of a phase shifter. Simultaneously, current also flows between the P-type and N-type doped regions on either side of the optical waveguide (note: the arrow directions are for illustration only; the actual current flow in this case is more complex, but the effect is that current crosses the optical waveguide). This current crosses the optical waveguide and absorbs light, thus realizing the function of an optical attenuator. Therefore, this embodiment can be used as both an optical phase shifter and an optical attenuator.

[0069] Referring to Figure 9, in some embodiments of the present invention, a first electrode A and a second electrode B are provided at both ends of the P-type doped region, and a third electrode C is provided in the middle of the N-type doped region. The electrical input terminals are respectively the first electrical input terminal and the second electrical input terminal, and there is one electrical output terminal. The first electrical input terminal is connected to the first electrode A, the second electrical input terminal is connected to the second electrode B, and the electrical output terminal is connected to the third electrode C. In actual use, electrical signals V1 and V2 are applied to the first electrode A and the second electrode B, respectively, and an electrical signal GND is applied to the electrical output terminal. The electrical signal adjustment circuit controls the magnitude of the electrical signals input to the first electrical input terminal and the second electrical input terminal, and adjusts the voltage input to the first electrical input terminal to be greater than the voltage input to the second electrical input terminal, that is, V1>V2. As shown by the arrows in Figure 9, current flows through the P-type doped region between the first electrode A and the second electrode B, generating heat energy that is transferred to the optical waveguide, changing the waveguide's refractive index and thus performing the phase shifter function. Simultaneously, current also flows between the P-type and N-type doped regions on either side of the optical waveguide, crossing the waveguide and absorbing light, thus performing the optical attenuator function. Therefore, this embodiment can function as both an optical phase shifter and an optical attenuator. This embodiment can be used when only one side of the optical waveguide needs to be heated for phase shifting.

[0070] The carrier injection optical attenuator is accompanied by a certain optical phase change during the optical attenuation process (determined by the physical mechanism). In some applications, only optical attenuation is required without an additional phase change, or this additional phase change needs to be controlled within a certain range. Therefore, using the embodiments shown in Figures 6-9, the optical phase change generated by the optical phase shifting function can be used to offset, weaken, or compensate for the unnecessary additional phase change generated during the optical attenuation process, effectively optimizing or adjusting the overall optical phase change to meet the needs of specific applications.

[0071] An embodiment of the present invention further provides an ion-doped optical waveguide array, comprising: a plurality of ion-doped optical waveguides; the ion-doped optical waveguides are arranged in sequence to form an array, and the doping types of the doping regions of any two adjacent ion-doped optical waveguides located on the same side are the same or opposite.

[0072] Referring to Figure 10 , in some embodiments of the present invention, there are three ion-doped optical waveguides, namely, from left to right (left and right as shown in Figure 10 ), a first ion-doped optical waveguide, a second ion-doped optical waveguide, and a third ion-doped optical waveguide. These three ion-doped optical waveguides are arranged in sequence to form an array. The doping regions located on the same side of the first ion-doped optical waveguide and the second ion-doped optical waveguide are respectively an N-type doping region (the doping region where the third electrode C and the fourth electrode D are located) and a P-type doping region (the doping region where the first electrode A and the second electrode B are located). The doping regions located on the same side of the second ion-doped optical waveguide and the third ion-doped optical waveguide are respectively an N-type doping region and a P-type doping region, i.e., the doping types are opposite.

[0073] Referring to FIG11 , in some embodiments of the present invention, there are three ion-doped optical waveguides, namely, from left to right (left and right as shown in FIG11 ), a first ion-doped optical waveguide, a second ion-doped optical waveguide, and a third ion-doped optical waveguide. These three ion-doped optical waveguides are arranged in sequence to form an array. The doping regions located on the same side of the first ion-doped optical waveguide and the second ion-doped optical waveguide are respectively an N-type doping region (the doping region where the third electrode C and the fourth electrode D are located) and an N-type doping region; the doping regions located on the same side of the second ion-doped optical waveguide and the third ion-doped optical waveguide are respectively a P-type doping region (the doping region where the first electrode A and the second electrode B are located) and a P-type doping region. In other words, these waveguides have the same doping type and can be connected as a whole or share a single doping region.

[0074] For the method of using the ion-doped optical waveguide array, please refer to the method of using the ion-doped optical waveguide.

[0075] In some embodiments of the present invention, the ion-doped optical waveguide or each optical waveguide in the array may have the same doping concentration in the doping regions on the left and right sides of the optical waveguide, or may have multiple different doping concentrations, forming a certain gradient.

[0076] 12 , in some embodiments of the present invention, the P-type or N-type doping regions on both sides of the optical waveguide each have three different doping concentrations, which are specifically applied in specific scenarios as needed.

[0077] In any of the above embodiments, the applied electrical signal can be a fixed voltage or an adjustable voltage. The adjustable voltage can be output and flexibly controlled by methods such as an adjustable circuit. In addition to using a voltage source, the signal source can also be expanded to a current source.

[0078] In some embodiments of the present invention, air walls or air grooves (e.g., air-filled sealed cavities or air openings) may be provided around the optical waveguides and optical waveguide arrays for thermal insulation to improve the heating efficiency of the phase shifters. In other embodiments of the present invention, air walls or air grooves may not be provided around the optical waveguides and optical waveguide arrays.

[0079] In some embodiments of the present invention, the distance between the ion doping and the optical waveguide can be set as needed to balance indicators such as light absorption loss and working efficiency.

[0080] In summary, the present invention can adjust both the phase and intensity of light by designing an ion-doped optical waveguide structure. Therefore, it can be used as an optical phase shifter alone or as an optical attenuator alone, and can even realize the functions of an optical phase shifter and an optical attenuator at the same time. Therefore, the present invention saves a lot of space on the chip, that is, reduces the area of ​​the chip, and thus can reduce costs. In addition, the present invention is flexible in use and can meet the needs of a variety of specific scenarios. It can be applied in optical communications, optical interconnection, lidar, beam control, optical sensing, free-space optical communications, optical storage, optical computing, optical gyroscopes, virtual reality and other fields.

[0081] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. An ion-doped optical waveguide structure, characterized in that: include: Optical waveguides; A doping region, comprising a P-type doping region and an N-type doping region respectively arranged on both sides of the optical waveguide, wherein the P-type doping region and the N-type doping region are isolated from each other; A plurality of electrodes, wherein the electrodes are arranged on the P-type doping region and the N-type doping region; An electrical signal regulating circuit comprises a plurality of electrical input terminals and at least one electrical output terminal, wherein the electrical input terminals input corresponding electrical signals and the electrical output terminals output electrical signals, thereby forming a circuit loop between the electrical input terminals and the electrical output terminals, wherein the electrical input terminals and the electrical output terminals are respectively connected to the corresponding electrodes, and the electrical signal regulating circuit is used to regulate the magnitude of the electrical signals applied to the electrodes.

2. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are four electrodes, namely a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at two ends of the N-type doping region; There are two electrical input terminals, namely a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the third electrode, the first electrical output terminal is connected to the second electrode, and the second electrical output terminal is connected to the fourth electrode. The size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is the same as or different from the voltage input to the second electrical input terminal.

3. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are four electrodes, namely a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at two ends of the N-type doping region; There are two electrical input terminals, namely a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the first electrical output terminal is connected to the third electrode, and the second electrical output terminal is connected to the fourth electrode. The size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is the same as the voltage input to the second electrical input terminal.

4. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are four electrodes, namely a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at two ends of the N-type doping region; There are two electrical input terminals, namely a first electrical input terminal and a second electrical input terminal; there are two electrical output terminals, namely a first electrical output terminal and a second electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the first electrical output terminal is connected to the third electrode, and the second electrical output terminal is connected to the fourth electrode. The size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal.

5. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are three electrical input terminals, namely, a first electrical input terminal, a second electrical input terminal and a third electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the third electrical input terminal is connected to the third electrode, and the electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit, so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is the same as the voltage input to the third electrical input terminal.

6. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at the two ends of the P-type doping region, and the third electrode and the fourth electrode are arranged at the two ends of the N-type doping region; there are three electrical input terminals, namely, a first electrical input terminal, a second electrical input terminal and a third electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, the third electrical input terminal is connected to the third electrode, and the electrical output terminal is connected to the fourth electrode, and the size of the input electrical signal is adjusted by the electrical signal adjustment circuit, so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal, and the voltage input to the second electrical input terminal is greater than the voltage input to the third electrical input terminal.

7. The ion-doped optical waveguide structure according to claim 1, characterized in that: There are three electrodes, namely a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, and the third electrode is arranged in the middle of the N-type doping region; There are two electrical input terminals, namely a first electrical input terminal and a second electrical input terminal; there is one electrical output terminal; the first electrical input terminal is connected to the first electrode, the second electrical input terminal is connected to the second electrode, and the electrical output terminal is connected to the third electrode. The size of the input electrical signal is adjusted by the electrical signal adjustment circuit so that the voltage input to the first electrical input terminal is greater than the voltage input to the second electrical input terminal.

8. The ion-doped optical waveguide structure according to claim 1, characterized in that: The material of the optical waveguide includes bulk silicon, silicon on insulator, silicon on sapphire, aluminum oxide, indium phosphide, lithium niobate, barium titanate and polymer; the optical waveguide includes channel waveguide, ridge waveguide, slot waveguide, diffusion waveguide and photonic crystal waveguide; the routing shape of the optical waveguide includes straight line shape and curved line shape; the working wavelength range of the optical waveguide includes visible light band, O band, E band, S band, C band, L band, U band and mid-infrared band; multiple optical waveguides are located in the same layer, or are respectively located in corresponding multiple independent layers.

9. The ion-doped optical waveguide structure according to claim 1, characterized in that: The P-type doping region and / or the N-type doping region have the same doping impurity concentration, or have a plurality of different doping impurity concentrations.

10. The ion-doped optical waveguide structure according to claim 1, characterized in that: The electrical signal is a fixed voltage or an adjustable voltage; the relative difference of the voltages inputted by each of the electrical input terminals is adjusted by the electrical signal adjustment circuit.

11. The ion-doped optical waveguide structure according to claim 1, characterized in that: By using the "time division multiplexing" method, the voltage applied to the electrode is alternately adjusted by the electrical signal adjustment circuit in different time periods, so that the ion-doped optical waveguide can simultaneously realize the functions of an optical phase shifter and an optical attenuator.

12. An ion-doped optical waveguide array, characterized in that: include: A plurality of ion-doped optical waveguides according to any one of claims 1 to 11; The ion-doped optical waveguides are arranged in sequence to form an array, and the doping types of the doping regions of any two adjacent ion-doped optical waveguides located on the same side are the same or opposite.

13. A method for using the ion-doped optical waveguide according to claim 1, characterized in that: include: The size of the electric signal applied to the corresponding electrode is adjusted by the electric signal adjustment circuit, so that the ion-doped optical waveguide can realize the function of an optical phase shifter and / or an optical attenuator.

14. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, the number of electrical input terminals is two, namely, a first electrical input terminal and a second electrical input terminal, and the number of electrical output terminals is two, namely, a first electrical output terminal and a second electrical output terminal; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the third electrode, the first electrical output terminal to the second electrode, and the second electrical output terminal to the fourth electrode; The size of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal can be the same as or different from the voltage input by the second electrical input terminal. At this time, the current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide, so that the ion-doped optical waveguide can realize the function of an optical phase shifter.

15. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are four electrodes, namely, a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, and there are two electrical input terminals, namely, a first electrical input terminal and a second electrical input terminal; There are two electrical output terminals, namely a first electrical output terminal and a second electrical output terminal; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the first electrical output terminal to the third electrode, and the second electrical output terminal to the fourth electrode; The size of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal is the same as the voltage input by the second electrical input terminal. At this time, the current crosses the optical waveguide along a direction perpendicular to the optical waveguide, that is, flows between the P-type doped region and the N-type doped region, so that the ion-doped optical waveguide realizes the function of an optical attenuator.

16. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are four electrodes, they are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, the electrical input terminals are two, respectively a first electrical input terminal and a second electrical input terminal, and the electrical output terminals are two, respectively a first electrical output terminal and a second electrical output terminal; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the first electrical output terminal to the third electrode, and the second electrical output terminal to the fourth electrode; The size of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal is greater than the voltage input by the second electrical input terminal. At this time, the current flows through the P-type doped region along a direction parallel to the optical waveguide; at the same time, the current also crosses the optical waveguide along a direction perpendicular to the optical waveguide, flowing from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously realize the functions of an optical phase shifter and an optical attenuator.

17. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are four electrodes, they are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, there are three electrical input terminals, namely a first electrical input terminal, a second electrical input terminal and a third electrical input terminal, and there is one electrical output terminal; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the third electrical input terminal to the third electrode, and the electrical output terminal to the fourth electrode; The size of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal is greater than the voltage input by the second electrical input terminal, and the voltage input by the second electrical input terminal is the same as the voltage input by the third electrical input terminal. At this time, the current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide; at the same time, the current also flows across the optical waveguide, from the P-type doped region to the N-type doped region, so that the ion-doped optical waveguide can simultaneously realize the functions of an optical phase shifter and an optical attenuator.

18. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are four electrodes, they are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode and the fourth electrode are arranged at two ends of the N-type doping region, there are three electrical input terminals, namely a first electrical input terminal, a second electrical input terminal and a third electrical input terminal, and there is one electrical output terminal; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, the third electrical input terminal to the third electrode, and the electrical output terminal to the fourth electrode; The magnitude of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal is greater than the voltage input by the second electrical input terminal, and the second The voltage input to the electrical input terminal is greater than the voltage input to the third electrical input terminal. At this time, the current flows through the P-type doped region and the N-type doped region in a direction parallel to the optical waveguide; at the same time, the current also flows across the optical waveguide, from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously realize the functions of an optical phase shifter and an optical attenuator.

19. The method for using the ion-doped optical waveguide according to claim 13, characterized in that: When there are three electrodes, namely, a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are arranged at two ends of the P-type doping region, the third electrode is arranged in the middle of the N-type doping region, the electrical input terminals are two, namely, a first electrical input terminal and a second electrical input terminal, and the electrical output terminal is one; Connecting the first electrical input terminal to the first electrode, the second electrical input terminal to the second electrode, and the electrical output terminal to the third electrode; The size of the electrical signal input by the electrical signal adjustment circuit is adjusted so that the voltage input by the first electrical input terminal is greater than the voltage input by the second electrical input terminal. At this time, the current flows through the P-type doped region in a direction parallel to the optical waveguide; at the same time, the current also flows across the optical waveguide in a direction perpendicular to the optical waveguide, from the P-type doped region to the N-type doped region, thereby enabling the ion-doped optical waveguide to simultaneously realize the functions of an optical phase shifter and an optical attenuator.

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