Monitoring device and method for epitaxial reaction chamber

Abstract

The present disclosure relates to the technical field of semiconductor manufacturing, and provides a monitoring device and method for an epitaxial reaction chamber. The monitoring device for an epitaxial reaction chamber comprises: a gas detector arranged at a gas inlet of the epitaxial reaction chamber and used for detecting components and flow velocity of a process gas introduced into the epitaxial reaction chamber; a timer arranged at the gas inlet of the epitaxial reaction chamber and used for recording the start time and end time of introducing the process gas into the epitaxial reaction chamber; and a processor used for determining the total deposition thickness of the epitaxial reaction chamber on the basis of data of the gas detector and the timer.

Description

Epitaxial reaction chamber monitoring device and method

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This disclosure claims priority to Chinese Patent Application No. 202311093931.6 filed in China on August 28, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a monitoring device and method for an epitaxial reaction chamber. Background Art

[0004] Epitaxial growth refers to the process of growing a single-crystal thin film (with the crystal orientation aligned with the substrate) on a single-crystal silicon substrate using epitaxial technology. Epitaxial wafer production involves five major steps: crystal pulling (pulling silicon ingots from polycrystalline silicon) → forming (slicing and grinding) → polishing (double-sided polishing) → cleaning (removing surface particles, metal ions, and organic matter) → epitaxy (vapor deposition). Epitaxy, as the final production step, can significantly improve the polished wafer's crystal properties, native defects, resistivity, flatness, and other process parameters.

[0005] The stability and maintenance periodicity of epitaxial reaction chambers affect the stability, yield, and cost of epitaxial products. However, existing technologies lack effective methods for monitoring the total deposited film thickness in epitaxial reaction chambers, making timely maintenance and repair impossible. This, in turn, impacts product stability, yield, and cost.

[0006] Summary of the Invention

[0007] In order to solve the above technical problems, the present disclosure provides a monitoring device and method for an epitaxial reaction chamber, which can monitor the total deposited film thickness in the epitaxial reaction chamber.

[0008] A monitoring device for an epitaxial reaction chamber, comprising:

[0009] a gas detector disposed at the gas inlet of the epitaxial reaction chamber, for detecting the composition and flow rate of the process gas introduced into the epitaxial reaction chamber;

[0010] a timer provided at the gas inlet of the epitaxial reaction chamber, for recording the start time and the end time of introducing the process gas into the epitaxial reaction chamber;

[0011] A processor is used to determine the total deposition thickness of the epitaxial reaction chamber according to data from the gas detector and the timer.

[0012] In some embodiments, the apparatus further comprises:

[0013] an alarm connected to the processor;

[0014] The processor is further configured to send an alarm signal to the alarm device when the total deposition thickness is greater than a preset threshold value, thereby controlling the alarm device to sound an alarm.

[0015] In some embodiments, the processor is specifically used to calculate the total duration of introducing the process gas into the epitaxial reaction chamber based on the start time and end time of introducing the process gas into the epitaxial reaction chamber, determine the deposition rate of the process gas in the epitaxial reaction chamber based on the composition and flow rate of the process gas, and calculate the total deposition thickness of the epitaxial reaction chamber based on the deposition rate and the total duration.

[0016] In some embodiments, the apparatus further comprises:

[0017] a memory for storing a correspondence between a composition and a flow rate of a process gas and a deposition rate of the process gas in the epitaxial reaction chamber;

[0018] The processor is specifically configured to determine a deposition rate of the process gas in the epitaxial reaction chamber according to the corresponding relationship, the component and the flow rate of the process gas.

[0019] In some embodiments, the gas detector and the timer are an integrated structure.

[0020] In some embodiments, the preset threshold is greater than or equal to 200,000 μm and less than or equal to 300,000 μm.

[0021] The present disclosure also provides a method for monitoring an epitaxial reaction chamber, which is applied to the monitoring device for the epitaxial reaction chamber as described above. The method includes:

[0022] Using the gas detector to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber;

[0023] Using the timer to record the start time and the end time of introducing the process gas into the epitaxial reaction chamber;

[0024] The total deposition thickness of the epitaxial reaction chamber is determined according to data from the gas detector and the timer.

[0025] In some embodiments, the present invention further comprises:

[0026] When the total deposition thickness is greater than a preset threshold, an alarm signal is sent to the alarm to control the alarm to sound an alarm.

[0027] In some embodiments, determining the total deposition thickness of the epitaxial reaction chamber according to data from the gas detector and the timer includes:

[0028] Calculating a total duration of the process gas being introduced into the epitaxial reaction chamber according to a start time and an end time of the process gas being introduced into the epitaxial reaction chamber;

[0029] determining a deposition rate of the process gas in the epitaxial reaction chamber according to the composition and flow rate of the process gas;

[0030] The total deposition thickness of the epitaxial reaction chamber is calculated according to the deposition rate and the total duration.

[0031] In some embodiments, the present invention further comprises:

[0032] Reading a correspondence between a composition and a flow rate of a process gas and a deposition rate of the process gas in the epitaxial reaction chamber stored in a memory;

[0033] The deposition rate of the process gas in the epitaxial reaction chamber is determined according to the corresponding relationship, the component and the flow rate of the process gas.

[0034] The beneficial effects of the present disclosure are:

[0035] In this embodiment, a gas detector and a timer are provided at the air inlet of the epitaxial reaction chamber. The gas detector can be used to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber, and the timer can be used to record the start time and end time of introducing the process gas into the epitaxial reaction chamber. The total deposition thickness of the epitaxial reaction chamber can be determined based on the data from the gas detector and the timer. In this way, the total deposition film thickness of the epitaxial reaction chamber during the epitaxial growth process can be monitored, so that the epitaxial reaction chamber can be maintained and serviced based on the total deposition film thickness of the epitaxial reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] FIG1 is a schematic diagram showing a method for monitoring gas introduced into an epitaxial reaction chamber in the related art;

[0037] FIG2 is a schematic diagram showing monitoring of process gases introduced into an epitaxial reaction chamber according to an embodiment of the present disclosure;

[0038] FIG3 is a schematic top view of an epitaxial reaction chamber in the related art;

[0039] FIG4 is a schematic left view of an epitaxial reaction chamber in the related art;

[0040] FIG5 is a schematic top view of an epitaxial reaction chamber according to an embodiment of the present disclosure;

[0041] FIG6 is a schematic left side view of an epitaxial reaction chamber according to an embodiment of the present disclosure;

[0042] FIG. 7 is a schematic flow chart showing a method for monitoring an epitaxial reaction chamber according to an embodiment of the present disclosure.

[0043] Figure numerals: 01, valve; 02, gas detector; 03, timer; 04, epitaxial reaction chamber; 05, silicon wafer; 06, air inlet. DETAILED DESCRIPTION

[0044] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this disclosure.

[0045] Due to the particularity of the epitaxial reaction chamber, the maintenance standard in related technologies is formulated according to the total film thickness deposited after each maintenance. The total film thickness deposited after each maintenance needs to be monitored through very complex calculation logic, equipment and system development, which consumes a lot of manpower, time and cost.

[0046] Figure 1 shows a schematic diagram of gas monitoring into an epitaxial reaction chamber in the related art. As shown in Figure 1, in the related art, gas entering the epitaxial reaction chamber is monitored using a mass flow controller (MFC), where arrows indicate gas flow direction and 01 represents a valve on the gas pipeline. The flow monitor not only records the flow rate of process gas entering the epitaxial reaction chamber, but also the flow rate of gas used to stabilize the gas flow before entering the chamber. Therefore, the data from the flow monitor cannot be used to monitor the total deposited film thickness in the epitaxial reaction chamber.

[0047] The present disclosure provides a monitoring device and method for an epitaxial reaction chamber, which can monitor the total deposited film thickness in the epitaxial reaction chamber.

[0048] The present disclosure provides a monitoring device for an epitaxial reaction chamber, as shown in FIG2 , including:

[0049] A gas detector 02 provided at the gas inlet of the epitaxial reaction chamber, for detecting the composition and flow rate of the process gas introduced into the epitaxial reaction chamber;

[0050] A timer 03 provided at the gas inlet of the epitaxial reaction chamber, for recording the start time and the end time of the introduction of the process gas into the epitaxial reaction chamber;

[0051] A processor is used to determine the total deposition thickness of the epitaxial reaction chamber according to data from the gas detector and the timer.

[0052] In this embodiment, a gas detector and a timer are provided at the air inlet of the epitaxial reaction chamber. The gas detector can be used to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber, and the timer can be used to record the start time and end time of introducing the process gas into the epitaxial reaction chamber. The total deposition thickness of the epitaxial reaction chamber can be determined based on the data from the gas detector and the timer. In this way, the total deposition film thickness of the epitaxial reaction chamber during the epitaxial growth process can be monitored, so that the epitaxial reaction chamber can be maintained and serviced based on the total deposition film thickness of the epitaxial reaction chamber.

[0053] As shown in Figure 2, in this embodiment, a gas detector 02 and a timer 03 are provided at the air inlet of the epitaxial reaction chamber. The setting positions of the gas detector 02 and the timer 03 are different from the setting positions of the flow monitor. The gas detector 02 and the timer 03 are provided between the epitaxial reaction chamber and the gas outlet for gas flow stabilization. In this way, the gas detector 02 and the timer 03 will not record the gas used for gas flow stabilization before entering the chamber, but will only record the process gas entering the epitaxial reaction chamber.

[0054] In this embodiment, the processor is in communication with the gas detector 02 and the timer 03 and can obtain data from the gas detector 02 and the timer 03. The processor and the gas detector 02 and the timer 03 can be connected by wire or wirelessly via a local area network or Bluetooth.

[0055] In order to simplify the structure, in this embodiment, the gas detector 02 can be an integrated structure with the timer 03. As shown in Figures 5 and 6, the gas detector 02 can be integrated into the timer 03. Of course, the timer 03 can also be integrated into the gas detector 02. Figure 3 shows a top view schematic diagram of the epitaxial reaction chamber in the related art, and Figure 4 shows a left view schematic diagram of the epitaxial reaction chamber in the related art. As shown in Figures 3 and 4, in the related art, no device for detecting process gas is provided at the air inlet 06 of the epitaxial reaction chamber; in this embodiment, as shown in Figures 5 and 6, a timer 03 is provided at the air inlet 06 of the epitaxial reaction chamber to record the start time and end time of the process gas introduced into the epitaxial reaction chamber; and the gas detector 02 can be integrated into the timer 03 to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber.

[0056] In this embodiment, the process gases include but are not limited to silicon source gas, boron source gas, phosphorus source gas and arsenic source gas. Process gases of different components have different deposition rates in the epitaxial reaction chamber, and process gases of different flow rates have different deposition rates in the epitaxial reaction chamber. Therefore, it is necessary to use the gas detector 02 to detect the composition and flow rate of the process gas entering the epitaxial reaction chamber. Of course, if the composition and flow rate of the process gas entering the epitaxial reaction chamber can be obtained in advance, the setting of the gas detector 02 can also be omitted.

[0057] In some embodiments, the apparatus further comprises:

[0058] a memory for storing a correspondence between a composition and a flow rate of a process gas and a deposition rate of the process gas in the epitaxial reaction chamber;

[0059] The processor is specifically configured to determine a deposition rate of the process gas in the epitaxial reaction chamber according to the corresponding relationship, the component and the flow rate of the process gas.

[0060] In this embodiment, the correspondence between the composition and flow rate of the process gas and the deposition rate of the process gas in the epitaxial reaction chamber can be determined in advance through a large number of experiments, and the correspondence between the composition and flow rate of the process gas and the deposition rate of the process gas in the epitaxial reaction chamber can be stored. After the composition and flow rate of the process gas are detected by the gas detector 02, the deposition rate of the process gas in the epitaxial reaction chamber can be determined based on the correspondence.

[0061] In some embodiments, the processor is specifically used to calculate the total duration of introducing the process gas into the epitaxial reaction chamber based on the start time and end time of introducing the process gas into the epitaxial reaction chamber, determine the deposition rate of the process gas in the epitaxial reaction chamber based on the composition and flow rate of the process gas, and calculate the total deposition thickness of the epitaxial reaction chamber based on the deposition rate and the total duration.

[0062] In this embodiment, the start time and end time of the process gas introduction into the epitaxial reaction chamber are recorded by timer 03. The duration of the process gas introduction into the epitaxial reaction chamber can be obtained by the start time and end time. During each epitaxial growth process, the thickness of the deposited film in the epitaxial reaction chamber during the epitaxial growth process can be obtained by the duration of the process gas introduction into the epitaxial reaction chamber and the deposition rate of the process gas in the epitaxial reaction chamber. After performing multiple epitaxial growth processes, the duration of the process gas introduction into the epitaxial reaction chamber during the multiple epitaxial growth processes is added together to obtain the total duration of the process gas introduction into the epitaxial reaction chamber. Based on the total duration and the deposition rate of the process gas in the epitaxial reaction chamber, the total thickness of the deposited film in the epitaxial reaction chamber can be obtained.

[0063] Each time an epitaxial growth process is performed, a set of start time and end time is recorded; for example, when the first epitaxial growth process is performed, the start time K1 and the end time J1 of the process gas introduced into the epitaxial reaction chamber are recorded, and the duration T1 of the process gas introduced into the epitaxial reaction chamber during the epitaxial growth process can be obtained by the start time K1 and the end time J1 (T1=J1-K1); when the second epitaxial growth process is performed, the start time K2 of the process gas introduced into the epitaxial reaction chamber is recorded. The start time Kn and the end time Jn of the process gas introduction into the epitaxial reaction chamber are recorded. The start time Kn and the end time Jn are used to calculate the duration T2 of the process gas introduction into the epitaxial reaction chamber during this epitaxial growth process (T2 = J2 - K2). ... During the Nth epitaxial growth process, the start time Kn and the end time Jn of the process gas introduction into the epitaxial reaction chamber are recorded. The start time Kn and the end time Jn are used to calculate the duration Tn of the process gas introduction into the epitaxial reaction chamber during this epitaxial growth process (Tn = Jn - Kn). The total duration of the process gas introduction into the epitaxial reaction chamber after N epitaxial growth processes can be calculated by adding T1, T2, ..., and Tn.

[0064] In some embodiments, the apparatus further comprises:

[0065] an alarm connected to the processor;

[0066] The processor is further configured to send an alarm signal to the alarm device when the total deposition thickness is greater than a preset threshold value, thereby controlling the alarm device to sound an alarm.

[0067] When the total deposition thickness in the epitaxial reaction chamber exceeds a preset threshold, maintenance of the epitaxial reaction chamber is required. In this embodiment, when the total deposition thickness exceeds the preset threshold, an alarm can be controlled to sound an alarm, prompting an operator to stop production and perform maintenance on the epitaxial reaction chamber. The processor can also automatically send an email, text message, or phone call to the operator, prompting the operator to stop production and perform maintenance on the epitaxial reaction chamber.

[0068] The preset threshold can be set according to the components of the process gas. In some embodiments, the preset threshold may be greater than or equal to 200,000 μm and less than or equal to 300,000 μm. For example, the preset threshold may be 200,000 μm, 210,000 μm, 220,000 μm, 230,000 μm, 240,000 μm, 250,000 μm, 260,000 μm, 270,000 μm, 280,000 μm, 290,000 μm or 300,000 μm.

[0069] The present disclosure also provides a method for monitoring an epitaxial reaction chamber, which is applied to the monitoring device for the epitaxial reaction chamber as described above. As shown in FIG7 , the method includes:

[0070] Step 101: Detecting the composition and flow rate of the process gas introduced into the epitaxial reaction chamber using the gas detector;

[0071] Step 102: Using the timer to record the start time and the end time of introducing the process gas into the epitaxial reaction chamber;

[0072] Step 103: Determine the total deposition thickness of the epitaxial reaction chamber according to the data from the gas detector and the timer.

[0073] In this embodiment, a gas detector and a timer are provided at the air inlet of the epitaxial reaction chamber. The gas detector can be used to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber, and the timer can be used to record the start time and end time of introducing the process gas into the epitaxial reaction chamber. The total deposition thickness of the epitaxial reaction chamber can be determined based on the data from the gas detector and the timer. In this way, the total deposition film thickness of the epitaxial reaction chamber during the epitaxial growth process can be monitored, so that the epitaxial reaction chamber can be maintained and serviced based on the total deposition film thickness of the epitaxial reaction chamber.

[0074] As shown in Figure 2, in this embodiment, a gas detector 02 and a timer 03 are provided at the air inlet of the epitaxial reaction chamber. The setting positions of the gas detector 02 and the timer 03 are different from the setting positions of the flow monitor. The gas detector 02 and the timer 03 are provided between the epitaxial reaction chamber and the gas outlet for gas flow stabilization. In this way, the gas detector 02 and the timer 03 will not record the gas used for gas flow stabilization before entering the chamber, but will only record the process gas entering the epitaxial reaction chamber.

[0075] In this embodiment, the processor is in communication with the gas detector 02 and the timer 03 and can obtain data from the gas detector 02 and the timer 03. The processor and the gas detector 02 and the timer 03 can be connected by wire or wirelessly via a local area network or Bluetooth.

[0076] In this embodiment, the correspondence between the composition and flow rate of the process gas and the deposition rate of the process gas in the epitaxial reaction chamber can be determined in advance through a large number of experiments, and the correspondence between the composition and flow rate of the process gas and the deposition rate of the process gas in the epitaxial reaction chamber can be stored in a memory. After the composition and flow rate of the process gas are detected by the gas detector 02, the deposition rate of the process gas in the epitaxial reaction chamber can be determined based on the correspondence.

[0077] In some embodiments, the method further comprises:

[0078] Reading a correspondence between a composition and a flow rate of a process gas and a deposition rate of the process gas in the epitaxial reaction chamber stored in a memory;

[0079] The deposition rate of the process gas in the epitaxial reaction chamber is determined according to the corresponding relationship, the component and the flow rate of the process gas.

[0080] In some embodiments, determining the total deposition thickness of the epitaxial reaction chamber according to data from the gas detector and the timer includes:

[0081] Calculating a total duration of the process gas being introduced into the epitaxial reaction chamber according to a start time and an end time of the process gas being introduced into the epitaxial reaction chamber;

[0082] determining a deposition rate of the process gas in the epitaxial reaction chamber according to the composition and flow rate of the process gas;

[0083] The total deposition thickness of the epitaxial reaction chamber is calculated according to the deposition rate and the total duration.

[0084] Among them, each time the epitaxial growth process is performed, the timer records a set of start time and end time; for example, when the first epitaxial growth process is performed, the start time K1 and the end time J1 of the process gas being introduced into the epitaxial reaction chamber are recorded, and the duration T1 of the process gas being introduced into the epitaxial reaction chamber during the epitaxial growth process can be obtained through the start time K1 and the end time J1 (T1=J1-K1); when the second epitaxial growth process is performed, the start time of the process gas being introduced into the epitaxial reaction chamber is recorded K2 and end time J2. The duration T2 of the process gas introduced into the epitaxial reaction chamber during this epitaxial growth process can be obtained by using the start time K2 and the end time J2 (T2=J2-K2); ...; when performing the Nth epitaxial growth process, the start time Kn and the end time Jn of the process gas introduced into the epitaxial reaction chamber are recorded. The duration Tn of the process gas introduced into the epitaxial reaction chamber during this epitaxial growth process can be obtained by using the start time Kn and the end time Jn (Tn=Jn-Kn). Adding T1, T2, ..., Tn can obtain the total duration of the process gas introduced into the epitaxial reaction chamber after N epitaxial growth processes. Based on the total duration and the deposition rate of the process gas in the epitaxial reaction chamber, the total deposited film thickness of the epitaxial reaction chamber can be obtained.

[0085] In some embodiments, the method further comprises:

[0086] When the total deposition thickness is greater than a preset threshold, an alarm signal is sent to the alarm to control the alarm to sound an alarm.

[0087] When the total deposition thickness in the epitaxial reaction chamber exceeds a preset threshold, maintenance of the epitaxial reaction chamber is required. In this embodiment, when the total deposition thickness exceeds the preset threshold, an alarm can be controlled to sound an alarm, prompting an operator to stop production and perform maintenance on the epitaxial reaction chamber. The processor can also automatically send an email, text message, or phone call to the operator, prompting the operator to stop production and perform maintenance on the epitaxial reaction chamber.

[0088] The technical solution of this embodiment can not only be used to monitor the total deposition thickness of the epitaxial reaction chamber in the epitaxial growth process, but can also be used to monitor the total deposition thickness of the CVD chamber in various semiconductor production fields using chemical vapor deposition (CVD) film formation.

[0089] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.

[0090] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0091] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0092] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0093] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A monitoring device for an epitaxial reaction chamber, comprising: A gas detector disposed at the gas inlet of the epitaxial reaction chamber, for detecting the composition and flow rate of the process gas introduced into the epitaxial reaction chamber; A timer disposed at the gas inlet of the epitaxial reaction chamber, used to record the start time and the end time of introducing the process gas into the epitaxial reaction chamber; A processor is used to determine the total deposition thickness of the epitaxial reaction chamber according to data from the gas detector and the timer.

2. The monitoring device for an epitaxial reaction chamber according to claim 1, wherein: The device also includes: an alarm connected to the processor; The processor is further configured to send an alarm signal to the alarm device to control the alarm device to sound an alarm when the total deposition thickness is greater than a preset threshold.

3. The monitoring device for an epitaxial reaction chamber according to claim 1, wherein: The processor is specifically used to calculate the total duration of introducing process gas into the epitaxial reaction chamber according to the start time and the end time of introducing the process gas into the epitaxial reaction chamber, determine the deposition rate of the process gas in the epitaxial reaction chamber according to the composition and flow rate of the process gas, and calculate the total deposition thickness of the epitaxial reaction chamber according to the deposition rate and the total duration.

4. The monitoring device for an epitaxial reaction chamber according to claim 3, wherein: The device also includes: A memory for storing a correspondence between a component and a flow rate of a process gas and a deposition rate of the process gas in the epitaxial reaction chamber; The processor is specifically configured to determine a deposition rate of the process gas in the epitaxial reaction chamber according to the corresponding relationship, the component and the flow rate of the process gas.

5. The monitoring device for an epitaxial reaction chamber according to claim 1, wherein: The gas detector and the timer are an integrated structure.

6. The monitoring device for an epitaxial reaction chamber according to claim 2, wherein: The preset threshold is greater than or equal to 200,000 μm and less than or equal to 300,000 μm.

7. A method for monitoring an epitaxial reaction chamber, applied to the monitoring device for an epitaxial reaction chamber according to any one of claims 1 to 6, the method comprising: Using the gas detector to detect the composition and flow rate of the process gas introduced into the epitaxial reaction chamber; Using the timer to record the start time and end time of introducing the process gas into the epitaxial reaction chamber; The total deposition thickness of the epitaxial reaction chamber is determined according to the data of the gas detector and the timer.

8. The method for monitoring an epitaxial reaction chamber according to claim 7, wherein: Also includes: When the total deposition thickness is greater than a preset threshold, an alarm signal is sent to the alarm to control the alarm to sound an alarm.

9. The method for monitoring an epitaxial reaction chamber according to claim 7, wherein: Determining the total deposition thickness of the epitaxial reaction chamber according to the data of the gas detector and the timer comprises: Calculating the total duration of introducing the process gas into the epitaxial reaction chamber according to the start time and the end time of introducing the process gas into the epitaxial reaction chamber; determining a deposition rate of the process gas in the epitaxial reaction chamber according to the composition and flow rate of the process gas; The total deposition thickness of the epitaxial reaction chamber is calculated according to the deposition rate and the total duration.

10. The monitoring method of an epitaxial reaction chamber according to claim 7, wherein: Also includes: Reading the corresponding relationship between the composition and flow rate of the process gas and the deposition rate of the process gas in the epitaxial reaction chamber stored in the memory; The deposition rate of the process gas in the epitaxial reaction chamber is determined according to the corresponding relationship, the component and the flow rate of the process gas.

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