Gas mixing apparatus and semiconductor process equipment

Abstract

Embodiments of the present invention relate to the technical field of semiconductors, and provide a gas mixing apparatus and a semiconductor process equipment. The gas mixing apparatus comprises a body and a gas equalizing plate, the body being provided with a gas mixing chamber and a gas inlet and a gas outlet which are in communication with the gas mixing chamber. The flow area of the gas mixing chamber changes in a direction from the gas inlet to the gas outlet. The gas equalizing plate is provided with a plurality of gas equalizing holes, and the gas equalizing plate is arranged inside of the gas mixing chamber. According to the present invention, uniformity of gas mixing may be improved, thereby improving the quality of semiconductor forming.

Description

Gas mixing device and semiconductor process equipment Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gas mixing device and semiconductor process equipment. Background Art

[0002] During processes such as semiconductor molding, it is often necessary to introduce a mixture of multiple gases into the process chamber to meet the process requirements of semiconductor preparation.

[0003] However, in existing semiconductor process equipment, multiple gases are often introduced into the reaction chamber through a multi-turn connector. This direction will cause uneven mixing of multiple gases, affecting the quality of semiconductor molding.

[0004] Summary of the Invention

[0005] The objects of the present invention include, for example, providing a gas mixing device and a semiconductor process setting, which can improve the uniformity of gas mixing, thereby improving the quality of semiconductor molding.

[0006] The embodiments of the present invention can be implemented as follows:

[0007] In a first aspect, the present invention provides a gas mixing device, comprising a body and a gas equalizing plate, wherein the body is provided with a gas mixing cavity and an air inlet and an air outlet communicating with the gas mixing cavity;

[0008] The flow area of ​​the mixing chamber changes from the air inlet toward the air outlet;

[0009] A plurality of air-distributing holes are provided on the air-distributing plate, and the air-distributing plate is arranged in the air mixing cavity.

[0010] In an optional embodiment, there are multiple air equalizing plates, and the multiple air equalizing plates are spaced apart along the direction from the air inlet to the air outlet, and divide the air mixing chamber into multiple mixing zones, and the flow areas of the multiple mixing zones are variable.

[0011] In an optional embodiment, the flow area at both ends of the mixing zone is larger than the flow area in the middle of the mixing zone.

[0012] In an optional embodiment, the flow areas at both ends of the mixing zone gradually decrease toward the middle of the mixing zone, and the flow area in the middle of the mixing zone remains unchanged.

[0013] In an optional embodiment, the air balancing holes are arranged at an angle.

[0014] In an optional embodiment, all of the air equalizing holes are arranged obliquely from the air inlet toward the air outlet toward the center of the air equalizing plate.

[0015] In an optional embodiment, the pore diameters of the gas-balancing pores vary.

[0016] In an optional embodiment, the end of the air equalizing hole close to the air outlet gradually increases in size toward the air outlet.

[0017] In an optional embodiment, a section of the air equalizing hole close to the air inlet gradually increases in size toward the air inlet.

[0018] In a second aspect, the present invention provides a semiconductor process setup comprising the gas mixing device described in any one of the aforementioned embodiments.

[0019] The beneficial effects of the gas mixing device and semiconductor process equipment provided by the embodiments of the present invention include, for example:

[0020] This application sets a mixing chamber in the main body, and sets the flow area of ​​the mixing chamber to change from the air inlet to the air outlet. In this way, when the gas flows from the air inlet to the air outlet, the change in the flow area of ​​the mixing chamber can change the direction and pressure of the gas, thereby making the gas more evenly mixed in the mixing chamber. Secondly, an air equalization plate is set in the mixing chamber. The gas can further improve the mixing degree of the gas when passing through the air equalization holes of the air equalization plate, making the gas mixing more even. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0022] FIG1 is a schematic structural diagram of a first gas mixing device provided by an embodiment of the present invention;

[0023] FIG2 is a schematic structural diagram of a second gas mixing device provided by an embodiment of the present invention;

[0024] FIG3 is a schematic structural diagram of a gas equalizing plate of a gas mixing device provided in an embodiment of the present invention;

[0025] FIG4 is a schematic diagram of another structure of the gas equalizing plate of the gas mixing device provided in an embodiment of the present invention.

[0026] Icon: 100-gas mixing device; 110-main body; 111-gas mixing chamber; 113-air inlet; 115-air outlet; 117-mixing zone; 130-gas equalizing plate; 131-gas equalizing hole. DETAILED DESCRIPTION

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0029] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0030] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0031] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0032] Referring to Figure 1 , this embodiment provides a semiconductor process apparatus, which may be a film coating apparatus. The semiconductor process apparatus includes an apparatus body 110 and a gas mixing device 100. The apparatus body 110 includes a process chamber and is provided with a vent connected to the process chamber. The gas mixing device 100 communicates with the vent to deliver a uniformly mixed working gas into the process chamber.

[0033] In this embodiment, the gas mixing device 100 includes a main body 110 and an air equalizing plate 130. The main body 110 is provided with a gas mixing chamber 111 and an air inlet 113 and an air outlet 115 connected to the gas mixing chamber 111. Generally, the air outlet 115 is connected to the air vent through a pipeline or directly installed on the air vent. The air inlet 113 can be installed with a multi-way connector and connected to the delivery pipes of multiple working gases. So that a variety of gases flow into the gas mixing chamber 111 of the main body 110 through the air inlet 113, and are evenly mixed in the gas mixing chamber 111 and then sent to the reaction chamber. The flow area of ​​the gas mixing chamber 111 changes from the air inlet 113 to the direction of the gas outlet 115. A plurality of gas equalizing holes 131 are provided on the gas equalizing plate 130, and the gas equalizing plate 130 is provided in the gas mixing chamber 111.

[0034] In this embodiment, a gas mixing chamber 111 is provided within the main body 110, and the flow area of ​​the gas mixing chamber 111 is configured to change from the air inlet 113 toward the air outlet 115. Thus, when the gas flows from the air inlet 113 toward the air outlet 115, it can pass through the gas mixing chamber 111 with a variable flow area, thereby changing the direction and pressure of the gas, thereby allowing the gas to be mixed more evenly within the gas mixing chamber 111. Furthermore, an air equalizing plate 130 is provided within the gas mixing chamber 111. Passing through the air equalizing holes 131 of the air equalizing plate 130, the gas can further improve the degree of gas mixing and achieve more even gas mixing.

[0035] Please refer to Figure 1. In this embodiment, there are multiple air equalizing plates 130. The multiple air equalizing plates 130 are arranged at intervals along the air inlet 113 toward the air outlet 115, and divide the mixing chamber 111 into multiple mixing zones 117. The flow areas of the multiple mixing zones 117 are variable.

[0036] In this embodiment, a plurality of gas equalizing plates 130 are provided, so that the gas mixing chamber 111 can be divided into a plurality of mixing zones 117 connected in sequence by the gas equalizing plates 130. In this way, the gas can flow through the plurality of mixing zones 117 in sequence, undergoing a plurality of pressure and direction changes as well as the action of the gas equalizing holes 131 on the gas equalizing plates 130, thereby making the gas mixing more uniform.

[0037] In this embodiment, there are three air-distributing plates 130 . Of course, in other embodiments of the present application, the number of air-distributing plates 130 may be one, two, four, or more, so as to divide the air mixing chamber 111 into a plurality of mixing zones 117 .

[0038] 1 and 2 , in this embodiment, the flow areas at both ends of the mixing zone 117 are larger than the flow area in the middle of the mixing zone 117 .

[0039] In this embodiment, the flow areas at both ends of the mixing zone 117 are set to be larger than the flow area in the middle of the mixing zone 117 so that the gas can undergo multiple changes in pressure and direction in one mixing zone 117, thereby making the gas mixing more uniform.

[0040] 1 , in this embodiment, the flow areas at both ends of the mixing zone 117 gradually decrease toward the middle of the mixing zone 117 , while the flow area in the middle of the mixing zone 117 remains unchanged.

[0041] In this embodiment, the two ends of the mixing zone 117 are set to gradually reduce the flow area toward the middle, so that the front section can pressurize the passing gas and change its direction inward, while the middle area can stabilize the pressure to further mix it and maintain the pressure, and the rear end will decompress the gas and expand it outward. This alternating method of gas inside and outside can make the gas mixing more uniform.

[0042] Of course, in some other embodiments of the present application, the inner wall of the mixing chamber 111 may be configured as a continuous wave-shaped flow channel with a constant cross-section, so that the flow area of ​​the mixing chamber 111 can also be varied.

[0043] In this embodiment, some structures such as flow-turbulating bosses may be provided on the side walls of the mixing chamber 111 , so as to increase the flow disturbance to the passing gas and make the mixing more uniform.

[0044] In this embodiment, the cross section of the gas mixing cavity 111 is circular, and the change of the gas flow area thereof is achieved by optimizing the diameters of different regions.

[0045] In this embodiment, the mixing zone 117 is shaped like an hourglass.

[0046] 3 , in this embodiment, a plurality of gas-distributing holes 131 are arranged obliquely. The oblique arrangement of the gas-distributing holes 131 can make the gases collide with each other and mix more evenly.

[0047] In this embodiment, all the air equalizing holes 131 are arranged obliquely toward the center of the air equalizing plate 130 in a direction from the air inlet 113 toward the air outlet 115 .

[0048] In this embodiment, the gas equalizing holes 131 are tilted toward the center, so that the gas can expand violently in the next gas mixing chamber 111 after being diverted and pressurized by the gas equalizing holes 131, thereby increasing the uniformity of the gas mixing.

[0049] Please refer to FIG. 4 . Of course, in this embodiment or some other embodiments of the present application, the diameters of the gas-mixing holes 131 may be varied to improve the uniformity of gas mixing.

[0050] In this embodiment, the end of the air equalizing hole 131 close to the air outlet 115 gradually increases in size toward the air outlet 115 .

[0051] In this embodiment, the outlet 115 end of the gas equalizing hole 131 is set to gradually increase so that the gas can diffuse outward when flowing toward the outlet 115, thereby causing collisions between gases in adjacent gas equalizing holes 131 and making the gas mixing more complete.

[0052] In this embodiment, the section of the gas equalizing hole 131 close to the gas inlet 113 gradually increases in size toward the gas inlet 113. In this way, the gas will be pressurized at the gas inlet 113 end of the gas equalizing hole 131 when flowing through, thereby improving the uniformity of gas mixing.

[0053] In this embodiment, the shape of the air equalizing hole 131 is also hourglass-shaped, and both ends can be realized by chamfering.

[0054] Secondly, it should be noted that the gas mixing device 100 provided in this embodiment can also be used in other scenarios where multiple gases need to be mixed, and this embodiment does not limit the gas mixing device 100 to be used only in semiconductor process equipment.

[0055] In summary, the working principles and beneficial effects of the gas mixing device 100 and semiconductor process equipment provided by the embodiments of the present invention include:

[0056] This embodiment provides a mixing chamber 111 within the main body 110, and sets the flow area of ​​the mixing chamber 111 to change from the air inlet 113 toward the air outlet 115. This allows the gas to change its direction, volume, and pressure as it flows from the air inlet 113 toward the air outlet 115, through the change in the flow area of ​​the mixing chamber 111. This allows the gas to be mixed more evenly within the mixing chamber 111. Furthermore, an air balancing plate 130 is provided within the mixing chamber 111. Passing through the air balancing holes 131 of the air balancing plate 130, the gas can further improve the mixing degree of the gas, allowing the gas to be mixed more evenly.

[0057] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A gas mixing device, characterized in that: It comprises a body (110) and an air equalizing plate (130), wherein the body (110) is provided with an air mixing chamber (111) and an air inlet (113) and an air outlet (115) which are in communication with the air mixing chamber (111); The flow area of ​​the gas mixing chamber (111) changes from the gas inlet (113) toward the gas outlet (115); A plurality of gas equalizing holes (131) are arranged on the gas equalizing plate (130), and the gas equalizing plate (130) is arranged in the gas mixing chamber (111).

2. The gas mixing device according to claim 1, characterized in that: There are multiple air equalizing plates (130), and the multiple air equalizing plates (130) are arranged at intervals along the direction from the air inlet (113) to the air outlet (115), and divide the air mixing chamber (111) into multiple mixing zones (117), and the flow areas of the multiple mixing zones (117) are variable.

3. The gas mixing device according to claim 2, characterized in that: The flow areas at both ends of the mixing zone (117) are larger than the flow area in the middle of the mixing zone (117).

4. The gas mixing device according to claim 3, characterized in that: The flow areas at both ends of the mixing zone (117) gradually decrease toward the middle of the mixing zone (117), while the flow area in the middle of the mixing zone (117) remains unchanged.

5. The gas mixing device according to any one of claims 1 to 4, characterized in that: The air equalizing holes (131) are arranged obliquely.

6. The gas mixing device according to claim 5, characterized in that: All of the air equalizing holes (131) are arranged obliquely from the air inlet (113) toward the air outlet (115) and toward the center of the air equalizing plate (130).

7. The gas mixing device according to any one of claims 1 to 4, characterized in that: The pore diameters of the gas balancing pores (131) vary.

8. The gas mixing device according to claim 7, characterized in that: One end of the air equalizing hole (131) close to the air outlet (115) gradually increases in size towards the air outlet (115).

9. The gas mixing device according to claim 8, characterized in that: A section of the air equalizing hole (131) close to the air inlet (113) gradually increases in size towards the air inlet (113).

10. A semiconductor process equipment, characterized in that: The invention comprises the gas mixing device according to any one of claims 1 to 9.

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