Method for producing semiconductor device, and semiconductor device

Abstract

A method for producing a semiconductor device according to the present invention comprises a first step, a second step, a third step, and a fourth step. In the third step, a pad part is exposed from the bottom surface of a sealing resin. In the third step, the dimensions of the sealing resin from the bottom surface to a second surface of a first support part in a first direction are made smaller than the dimensions of the sealing resin from the top surface of the sealing resin to a first surface of the first support part in the first direction. In the fourth step, the first support part is cut by applying a compressive force to the top surface while supporting the second surface with a support body. In the fourth step, a first end surface that faces one side of a second direction and that is exposed from the sealing resin is formed on the first support part.

Description

Semiconductor device manufacturing method and semiconductor device

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a semiconductor device obtained by the manufacturing method.

[0002] Resin-packaged semiconductor devices, such as the semiconductor device disclosed in Patent Document 1, are widely known. The semiconductor device disclosed in Patent Document 1 includes a semiconductor element, a first lead electrically connected to the semiconductor element, a second lead on which the semiconductor element is mounted, and a sealing resin covering the semiconductor element. Each of the first lead and the second lead protrudes from the sealing resin.

[0003] The second lead of the semiconductor device disclosed in Patent Document 1 has a second pad on which a semiconductor element is mounted. A protrusion is provided on the second pad. The protrusion protrudes in a direction perpendicular to the normal direction of the second pad surface facing the semiconductor element. In the configuration of the semiconductor device, the protrusion provided on the second pad may be used as a support member connecting the lead frame and the second lead. In manufacturing the semiconductor device in this case, it is necessary to separate the protrusion from the lead frame after forming the encapsulating resin. At this time, a load acts on the second lead, including the protrusion, and large stress is concentrated in the portion of the encapsulating resin that contacts the second lead. This may cause cracks to form in the encapsulating resin.

[0004] JP 2018-60908 A

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce stress concentration in the sealing resin that occurs when leads are cut during device manufacturing.

[0006] A first aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising: a first step of forming a first lead having a pad portion having a mounting surface facing one side in a first direction and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a second step of bonding a semiconductor element to the mounting surface; a third step of forming a sealing resin covering the pad portion, a portion of the first support portion, and the semiconductor element; and a fourth step of cutting the first support portion. The sealing resin has a top surface facing the same side as the mounting surface in the first direction and a bottom surface facing the opposite side from the top surface in the first direction. The first support portion has a first surface facing the same side as the mounting surface in the first direction and a second surface facing the opposite side from the first surface in the first direction. In the third step, the sealing resin is formed so that a portion of each of the first surface and the second surface is covered with the sealing resin, the pad portion is exposed from the bottom surface, and the dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface. In the fourth step, the second surface is supported by a support, and a compressive force is applied to the top surface, thereby cutting the first support portion. In the fourth step, the first support portion is formed with a first end surface facing one side in the second direction and exposed from the sealing resin.

[0007] A second aspect of the present disclosure provides a semiconductor device comprising: a first lead having a pad portion with a mounting surface facing one side in a first direction and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a semiconductor element bonded to the mounting surface; and a sealing resin covering a portion of the first lead and the semiconductor element. The sealing resin has a top surface facing the same side as the mounting surface in the first direction and a bottom surface facing the opposite side from the top surface in the first direction and from which the pad portion is exposed. The first support portion has a first surface facing the same side as the top surface in the first direction and covered by the sealing resin, a second surface facing the opposite side from the first surface in the first direction and covered by the sealing resin, and a first end surface facing the second direction and exposed from the sealing resin. The dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface. The cross-sectional area of ​​the first support portion along a direction perpendicular to the second direction decreases from the side where the pad portion is located toward the first end surface.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, showing the sealing resin through the semiconductor device. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a bottom view corresponding to FIG. 4, showing the sealing resin through the semiconductor device. FIG. 6 is a front view of the semiconductor device shown in FIG. 1. FIG. 7 is a right side view of the semiconductor device shown in FIG. 1. FIG. 8 is a left side view of the semiconductor device shown in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a partially enlarged view of FIG. 5. FIG. 13 is a partially enlarged view of FIG. 9. FIG. 14 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the first embodiment of the present disclosure. FIG. 15 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 1. FIG. 16 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 1. FIG. 17 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 1 . FIG. 18 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 1 . FIG. 19 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 14 . FIG. 20 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 14 . FIG. 21 is a plan view of the semiconductor device according to the second embodiment of the present disclosure, seen through the sealing resin. FIG. 22 is a bottom view of the semiconductor device shown in FIG. 21, seen through the sealing resin. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21 . FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 21 . FIG. 25 is a partially enlarged view of FIG. 22 . FIG. 26 is a partially enlarged view of FIG. 23 . FIG. 27 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the second embodiment of the present disclosure. FIG. 28 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 21 . FIG. 29 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 21 . FIG. 30 is a cross-sectional view illustrating a manufacturing process of the semiconductor device shown in FIG. 21 . 31A to 31C are cross-sectional views illustrating the manufacturing process of the semiconductor device shown in FIG.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 13. The semiconductor device A10 includes a semiconductor element 10, a first lead 20, a plurality of second leads 30, a plurality of wires 40, and a sealing resin 50. The package format of the semiconductor device A10 is a small outline package (SOP). However, the package format of the semiconductor device A10 is not limited to SOP. For ease of understanding, FIGS. 3 and 5 show the sealing resin 50 in a see-through manner. In FIGS. 3 and 5, the outline of the sealing resin 50 is indicated by an imaginary line (double-dashed line).

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to the mounting surface 211 of the pad portion 21 (described later) will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0013] 9 to 11 , the sealing resin 50 covers the semiconductor element 10, a portion of the first lead 20, a portion of each of the plurality of second leads 30, and the plurality of wires 40. The sealing resin 50 is an insulator. The sealing resin 50 is made of a material containing, for example, epoxy resin. When viewed in the first direction z, the sealing resin 50 has a rectangular shape.

[0014] As shown in FIGS. 6 to 8, the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 55.

[0015] 6 to 8, the top surface 51 faces one side in the first direction z. The top surface 51 faces the same side in the first direction z as a mounting surface 211 of the pad portion 21, which will be described later. The bottom surface 52 faces the opposite side to the top surface 51 in the first direction z.

[0016] As shown in FIG. 6 , the first side surface 53 is connected to the top surface 51 and the bottom surface 52 and faces one side in the second direction x. The first side surface 53 includes a first region 531, a second region 532, and a third region 533. The first region 531 includes the first direction z as an in-plane direction. When viewed in the first direction z, the first region 531 is located outward from the top surface 51 and the bottom surface 52. The second region 532 is located between the first region 531 and the top surface 51 in the first direction z. The third region 533 is located on the opposite side of the second region 532 with respect to the first region 531. The second region 532 and the third region 533 are each inclined with respect to the first region 531. The inclination angle α1 of the second region 532 with respect to the first region 531 is greater than the inclination angle β1 of the third region 533 with respect to the first region 531.

[0017] As shown in FIG. 6 , the second side surface 54 is connected to the top surface 51 and the bottom surface 52 and faces the opposite side from the first side surface 53 in the second direction x. The second side surface 54 includes a fourth region 541, a fifth region 542, and a sixth region 543. The fourth region 541 includes the first direction z as an in-plane direction. As viewed in the first direction z, the fourth region 541 is located outward from both the top surface 51 and the bottom surface 52. The fifth region 542 is located between the fourth region 541 and the top surface 51 in the first direction z. The sixth region 543 is located on the opposite side from the fifth region 542 with respect to the fourth region 541. The fifth region 542 and the sixth region 543 are each inclined with respect to the fourth region 541. The inclination angle α2 of the fifth region 542 with respect to the fourth region 541 is greater than the inclination angle β2 of the sixth region 543 with respect to the fourth region 541.

[0018] As shown in FIGS. 7 and 8 , each of the two third side surfaces 55 is connected to the top surface 51 and the bottom surface 52 and faces opposite each other in the third direction y. Each of the two third side surfaces 55 includes a seventh region 551, an eighth region 552, and a ninth region 553. The seventh region 551 includes the first direction z as an in-plane direction. When viewed in the first direction z, the seventh region 551 is located outward from each of the top surface 51 and the bottom surface 52. The eighth region 552 is located between the seventh region 551 and the top surface 51 in the first direction z. The ninth region 553 is located on the opposite side of the eighth region 552 from the seventh region 551. Each of the eighth region 552 and the ninth region 553 is inclined with respect to the seventh region 551. The inclination angle α3 of the eighth region 552 relative to the seventh region 551 is equal to the inclination angle β3 of the ninth region 553 relative to the seventh region 551 .

[0019] The first lead 20 and the second leads 30 each contain copper (Cu). The first lead 20 and the second leads 30 are obtained from the same lead frame.

[0020] 3 and 9 to 11, the semiconductor element 10 is mounted on the first lead 20. The first lead 20 has a pad portion 21, a first support portion 22, a second support portion 23, a third support portion 24, and a fourth support portion 25.

[0021] As shown in FIG. 3 and FIGS. 9 to 11 , the pad portion 21 carries the semiconductor element 10. When viewed in the first direction z, the first lead 20 is rectangular. The pad portion 21 has a mounting surface 211 and an exposed surface 212. The mounting surface 211 faces one side in the first direction z. The semiconductor element 10 is mounted on the mounting surface 211. The exposed surface 212 faces the opposite side to the mounting surface 211 in the first direction z. The exposed surface 212 is exposed from the bottom surface 52 of the sealing resin 50.

[0022] As shown in FIGS. 3 , 5 , and 9 , the first support portion 22 is connected to one side of the pad portion 21 in the second direction x. The first support portion 22 is located closer to the first side surface 53 of the sealing resin 50 than the second side surface 54 of the sealing resin 50. The first support portion 22 has a first surface 22A, a second surface 22B, and a first end surface 22C. The first surface 22A faces the same side as the mounting surface 211 in the first direction z. The second surface 22B faces the opposite side to the first surface 22A in the first direction z. The first surface 22A and the second surface 22B are covered with the sealing resin 50. The first end surface 22C faces one side in the second direction x. The first end surface 22C is exposed from a first region 531 of the first side surface 53.

[0023] 9 , the dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the second surface 22B is smaller than the dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the first surface 22A. In this case, the dimension H2 is preferably 50% or less of the dimension H1. The dimension L1 of the second surface 22B in the second direction x is 50% or more of the dimension D1 in the second direction x of a region of the bottom surface 52 that is adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlaps with the second surface 22B as viewed in the first direction z.

[0024] As shown in FIGS. 3 , 5 , and 9 , the first support portion 22 has a first main portion 221, a first connecting portion 222, and a first end portion 223. The first main portion 221 includes a first surface 22A and a second surface 22B. The first connecting portion 222 connects the first main portion 221 and the pad portion 21. The first connecting portion 222 is inclined relative to the mounting surface 211 in the second direction x toward a side away from the pad portion 21. The inclination angle γ1 of the first connecting portion 222 relative to the mounting surface 211 is preferably 50° or less. The first end portion 223 is located on the opposite side of the first main portion 221 from the first connecting portion 222 in the second direction x and is connected to the first main portion 221. The first end portion 223 includes a first surface 22A, a second surface 22B, and a first end surface 22C.

[0025] 5 and 9 , a first recessed portion 224 recessed from the second surface 22B is provided at the first end 223 of the first support portion 22. The first recessed portion 224 is connected to the first main portion 221 and the first end surface 22C. In the semiconductor device A10, by providing the first recessed portion 224 at the first end 223, the cross-sectional area of ​​the first end 223 along a direction perpendicular to the second direction x decreases from the first main portion 221 to the first end surface 22C.

[0026] 13 , in the first support portion 22, the first recessed portion 224 of the first end portion 223 is in contact with the sealing resin 50. The dimension of the first recessed portion 224 in the second direction x is smaller than the dimension L1 of the second surface 22B of the first support portion 22. The first end surface 22C is flush with the first region 531 of the first side surface 53 of the sealing resin 50.

[0027] 12 and 13, the dimension b of the first end face 22C in the third direction y is different from the dimension h of the first end face 22C in the first direction z. In the semiconductor device A10, the dimension h is smaller than the dimension b.

[0028] As shown in FIGS. 3 , 5 , and 9 , the second support portion 23 is located on the opposite side of the pad portion 21 from the first support portion 22 in the second direction x and is connected to the pad portion 21. The second support portion 23 is located closer to the second side surface 54 of the sealing resin 50 than to the first side surface 53 of the sealing resin 50. The second support portion 23 has a third surface 23A, a fourth surface 23B, and a second end surface 23C. The third surface 23A faces the same side as the mounting surface 211 in the first direction z. The fourth surface 23B faces the opposite side from the third surface 23A in the first direction z. The third surface 23A and the fourth surface 23B are covered by the sealing resin 50. The second end surface 23C faces the opposite side from the first end surface 22C of the first support portion 22 in the second direction x. The second end surface 23C is exposed from a fourth region 541 of the second side surface 54.

[0029] 9 , the dimension H4 of the sealing resin 50 in the first direction z, which extends from the bottom surface 52 of the sealing resin 50 to the fourth surface 23B, is smaller than the dimension H3 of the sealing resin 50 in the first direction z, which extends from the top surface 51 of the sealing resin 50 to the third surface 23A. In this case, the dimension H4 is preferably 50% or less of the dimension H3. The dimension L2 of the fourth surface 23B in the second direction x is 50% or more of the dimension D2 of the bottom surface 52 in the second direction x of a region of the bottom surface 52 that is adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlaps with the fourth surface 23B as viewed in the first direction z.

[0030] As shown in FIGS. 3 , 5 , and 9 , the second support portion 23 has a second main portion 231, a second connecting portion 232, and a second end portion 233. The second main portion 231 includes a third surface 23A and a fourth surface 23B. The second connecting portion 232 connects the second main portion 231 and the pad portion 21. The second connecting portion 232 is inclined relative to the mounting surface 211 in the second direction x toward the side away from the pad portion 21. The inclination angle γ2 of the second connecting portion 232 relative to the mounting surface 211 is preferably 50° or less. The second end portion 233 is located on the opposite side of the second main portion 231 from the second connecting portion 232 in the second direction x and is connected to the second main portion 231. The second end portion 233 includes a third surface 23A, a fourth surface 23B, and a second end surface 23C.

[0031] 5 and 9 , a second recessed portion 234 recessed from the fourth surface 23B is provided at the second end 233 of the second support portion 23. The second recessed portion 234 is connected to the second main portion 231 and the second end surface 23C. In the semiconductor device A10, by providing the second recessed portion 234 at the second end 233, the cross-sectional area of ​​the second end 233 along a direction perpendicular to the second direction x decreases from the second main portion 231 to the second end surface 23C.

[0032] The dimension of the pad portion 21 in the second direction x is at least ten times the dimension of each of the first support portion 22 and the second support portion 23 in the second direction x.

[0033] As shown in FIGS. 3 , 5 , and 10 , the third support portion 24 is located on the same side as the first support portion 22 with respect to the pad portion 21 in the second direction x and is connected to the pad portion 21. The third support portion 24 is separated from the first support portion 22 in the third direction y. The third support portion 24 has a fifth surface 24A, a sixth surface 24B, and a third end surface 24C. The fifth surface 24A faces the same side as the mounting surface 211 in the first direction z. The sixth surface 24B faces the opposite side from the fifth surface 24A in the first direction z. The fifth surface 24A and the sixth surface 24B are covered with the sealing resin 50. The third end surface 24C faces the same side as the first end surface 22C of the first support portion 22 in the second direction x. The third end surface 24C is exposed from a first region 531 of the first side surface 53 of the sealing resin 50.

[0034] 10 , a dimension H6 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the sixth surface 24B is smaller than a dimension H5 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the fifth surface 24A. In this case, the dimension H6 is preferably 50% or less of the dimension H5. A dimension L3 of the sixth surface 24B in the second direction x is 50% or more of a dimension D1 in the second direction x of a region of the bottom surface 52 that is adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlaps with the sixth surface 24B as viewed in the first direction z.

[0035] As shown in FIGS. 3 , 5 , and 10 , the third support portion 24 has a third main portion 241, a third connecting portion 242, and a third end portion 243. The third main portion 241 includes a fifth surface 24A and a sixth surface 24B. The third connecting portion 242 connects the third main portion 241 and the pad portion 21. The third connecting portion 242 is inclined relative to the mounting surface 211 in the second direction x toward the side away from the pad portion 21. The inclination angle γ3 of the third connecting portion 242 relative to the mounting surface 211 is preferably 50° or less. The third end portion 243 is located on the opposite side of the third main portion 241 from the third connecting portion 242 in the second direction x, and is connected to the third main portion 241. The third end portion 243 includes a fifth surface 24A, a sixth surface 24B, and a third end surface 24C.

[0036] 5 and 10 , a third recessed portion 244 recessed from the sixth surface 24B is provided at the third end 243 of the third support portion 24. The third recessed portion 244 is connected to the third main portion 241 and the third end surface 24C. In the semiconductor device A10, by providing the third recessed portion 244 at the third end 243, the cross-sectional area of ​​the third end 243 along a direction perpendicular to the second direction x decreases from the third main portion 241 to the third end surface 24C.

[0037] As shown in FIGS. 3 , 5 , and 10 , the fourth support portion 25 is located on the same side as the second support portion 23 with respect to the pad portion 21 in the second direction x and is connected to the pad portion 21. The fourth support portion 25 is separated from the second support portion 23 in the third direction y. The fourth support portion 25 has a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C. The seventh surface 25A faces the same side as the mounting surface 211 in the first direction z. The eighth surface 25B faces the opposite side from the seventh surface 25A in the first direction z. The seventh surface 25A and the eighth surface 25B are covered with the sealing resin 50. The fourth end surface 25C faces the same side as the second end surface 23C of the second support portion 23 in the second direction x. The fourth end surface 25C is exposed from a fourth region 541 of the second side surface 54 of the sealing resin 50.

[0038] 10 , a dimension H8 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the eighth surface 25B is smaller than a dimension H7 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the seventh surface 25A. In this case, the dimension H8 is preferably 50% or less of the dimension H7. A dimension L4 of the eighth surface 25B in the second direction x is 50% or more of a dimension D2 in the second direction x of a region of the bottom surface 52 that is adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlaps with the eighth surface 25B as viewed in the first direction z.

[0039] As shown in FIGS. 3 , 5 , and 10 , the fourth support portion 25 has a fourth main portion 251, a fourth connecting portion 252, and a fourth end portion 253. The fourth main portion 251 includes a seventh surface 25A and an eighth surface 25B. The fourth connecting portion 252 connects the fourth main portion 251 and the pad portion 21. The fourth connecting portion 252 is inclined relative to the mounting surface 211 in the second direction x toward the side away from the pad portion 21. The inclination angle γ4 of the fourth connecting portion 252 relative to the mounting surface 211 is preferably 50° or less. The fourth end portion 253 is located on the opposite side of the fourth main portion 251 from the fourth connecting portion 252 in the second direction x, and is connected to the fourth main portion 251. The fourth end portion 253 includes a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C.

[0040] 5 and 10 , the fourth end 253 of the fourth support portion 25 has a fourth recessed portion 254 recessed from the eighth surface 25B. The fourth recessed portion 254 is connected to the fourth main portion 251 and the fourth end surface 25C. In the semiconductor device A10, by providing the fourth recessed portion 254 at the fourth end 253, the cross-sectional area of ​​the fourth end 253 along a direction perpendicular to the second direction x decreases from the fourth main portion 251 to the fourth end surface 25C.

[0041] As shown in FIG. 3 and FIGS. 9 to 11, the semiconductor element 10 is mounted on the pad portion 21 of the first lead 20. The semiconductor element 10 controls the functions of the semiconductor device A10. The type of semiconductor element 10 is not limited, and may be an IC or an LSI. The semiconductor element 10 is bonded to the mounting surface 211 of the pad portion 21 via a bonding layer 19. The bonding layer 19 is made of a paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, the bonding layer 19 is a conductor. Alternatively, the bonding layer 19 may be solder.

[0042] As shown in FIGS. 3 and 11 , the semiconductor element 10 has an element surface 11 and multiple electrodes 12. The element surface 11 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The element surface 11 is located between the top surface 51 of the sealing resin 50 and the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25 in the first direction z. As a result, when viewed in a direction perpendicular to the first direction z, the semiconductor element 10 includes portions protruding in the first direction z from each of the first support portion 22, the second support portion 23, the third support portion 24, and the fourth support portion 25. Multiple electrodes 12 are provided on the element surface 11. Each of the multiple electrodes 12 is electrically connected to a circuit configured in the semiconductor element 10.

[0043] As shown in FIGS. 3 and 5 , the multiple second leads 30 are arranged on both sides of the first lead 20 in the third direction y. Each of the multiple second leads 30 is electrically connected to the semiconductor element 10. The multiple second leads 30 include multiple first terminals 30A and multiple second terminals 30B. The multiple first terminals 30A are located on one side of the first lead 20 in the third direction y. The multiple first terminals 30A are arranged along the second direction x. Each of the multiple first terminals 30A protrudes from a seventh region 551 of one of the two third side surfaces 55 of the sealing resin 50. The multiple second terminals 30B are located on the opposite side of the multiple first terminals 30A with respect to the first lead 20 in the third direction y. The multiple second terminals 30B are arranged along the second direction x. Each of the multiple second terminals 30B protrudes from the seventh region 551 of the other of the two third side surfaces 55 .

[0044] 3 and 5, each of the multiple second leads 30 has an inner portion 31 and an outer portion 32. The inner portion 31 is covered with a sealing resin 50. As shown in FIGS. 3 and 11, the inner portion 31 of each of the multiple second leads 30 has a connection surface 311. The connection surface 311 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The connection surface 311 is located between the mounting surface 211 and the top surface 51 of the sealing resin 50 in the first direction z. In the semiconductor device A10, the connection surface 311 is located between the mounting surface 211 and the element surface 11 of the semiconductor element 10 in the first direction z. Furthermore, in the semiconductor device A10, the connection surfaces 311 of each of the multiple second leads 30, the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25 are all included in the same plane.

[0045] 3 and 5 , the outer part 32 is connected to one of the inner parts 31 of the corresponding plurality of second leads 30. The outer part 32 protrudes from a seventh region 551 of one of the two third side surfaces 55 of the sealing resin 50. The surface of the outer part 32 is plated with tin, for example. When viewed in the first direction z, the outer part 32 extends in the third direction y. When viewed in the second direction x, the outer part 32 is bent in a gull-wing shape.

[0046] 5 and 11 , the outer part 32 of each of the multiple second leads 30 has a mounting surface 321. The mounting surface 321 is exposed from the sealing resin 50. In the first direction z, the mounting surface 321 faces the opposite side to the connection surface 311 of the corresponding inner part 31 and is located farthest from the connection surface 311 of the corresponding inner part 31. The mounting surface 321 protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The mounting surface 321 is inclined with respect to the bottom surface 52.

[0047] 3 and 11 , each of the plurality of wires 40 is individually conductively bonded to each of the plurality of electrodes 12 of the semiconductor element 10 and to each of the connection surfaces 311 of the plurality of second leads 30. As a result, each of the plurality of second leads 30 is electrically connected to the semiconductor element 10. The plurality of wires 40 contains, for example, gold (Au). Alternatively, the plurality of wires 40 may contain aluminum (Al) or copper.

[0048] Next, a semiconductor device A11 according to a modified example of the first embodiment of the present disclosure will be described with reference to Fig. 14. Fig. 14 corresponds to Fig. 13 showing the semiconductor device A10. In the semiconductor device A11, the configuration of the first support portion 22 of the first lead 20 differs from that of the semiconductor device A10.

[0049] As shown in FIG. 14 , the first end portion 223 is located between the first surface 22A and the first end surface 22C in the second direction x and has a first intermediate surface 223A connected to the first surface 22A. When viewed in the second direction x, the first intermediate surface 223A overlaps the first main portion 221. The first end surface 22C is located between the first intermediate surface 223A and the second recessed portion 234 in the first direction z. The dimension of the first intermediate surface 223A in the second direction x is larger than the dimension of the second recessed portion 234 in the second direction x. The first intermediate surface 223A is inclined in the first direction z toward the inside of the first end portion 223 with respect to the first surface 22A and is also connected to the first end surface 22C. The first intermediate surface 223A is covered with sealing resin 50.

[0050] Next, an example of a method for manufacturing the semiconductor device A10 will be described with reference to Figures 15 to 18. Figures 15 to 18 correspond to Figure 9 showing the semiconductor device A10.

[0051] 15 , a first process P1 is performed to form a first lead 20 having a pad portion 21, a first support portion 22, and a second support portion 23. The first process P1 is performed in conjunction with the formation of a lead frame including the first lead 20 and a plurality of second leads 30. In the description of the manufacturing method of the semiconductor device A10, the description of the formation of the third support portion 24 and the fourth support portion 25 of the first lead 20 will be omitted. In the first process P1, a first recessed portion 224 is formed in the first end portion 223 of the first support portion 22, thereby reducing the cross-sectional area of ​​the first end portion 223 along a direction perpendicular to the second direction x from the first main portion 221 to the first end face 22C of the first support portion 22. In addition, by forming the second recess 234 at the second end 233 of the second support portion 23, the cross-sectional area of ​​the second end 233 along a direction perpendicular to the second direction x is reduced from the second main portion 231 of the second support portion 23 to the second end face 23C.

[0052] 15 , in the first process P1, the first connecting portion 222 of the first support portion 22 is inclined relative to the mounting surface 211 in the second direction x, away from the pad portion 21. At the same time, the second connecting portion 232 of the second support portion 23 is inclined relative to the mounting surface 211 in the second direction x, away from the pad portion 21. It is preferable that the inclination angles γ1 and γ2 of the first connecting portion 222 and the second connecting portion 232 relative to the mounting surface 211 are each 50° or less.

[0053] 16 , a second process P2 is performed in which the semiconductor element 10 is bonded to the mounting surface 211 of the pad portion 21. In the second process P2, the semiconductor element 10 is bonded to the mounting surface 211 via the bonding layer 19. Thereafter, although not shown, a plurality of wires 40 are formed by wire bonding, which are individually conductively bonded to the plurality of electrodes 12 of the semiconductor element 10 and the respective connection surfaces 311 of the plurality of second leads 30.

[0054] Next, as shown in FIG. 17 , a third process P3 is performed to form a sealing resin 50 that covers the pad portion 21, portions of the first support portion 22, and portions of the second support portion 23, as well as the semiconductor element 10. The sealing resin 50 is formed by transfer molding. In the third process P3, portions of the first surface 22A and the second surface 22B of the first support portion 22 and portions of the third surface 23A and the fourth surface 23B of the second support portion 23 are covered with the sealing resin 50. In this case, at least a portion of the first recess 224 formed in the first support portion 22 and at least a portion of the second recess 234 formed in the second support portion 23 are covered with the sealing resin 50. In addition, the exposed surface 212 of the pad portion 21 is exposed from the bottom surface 52. Furthermore, the dimension H2 shown in FIG. 9 is made smaller than the dimension H1. In addition, the dimension H4 shown in FIG. 9 is made smaller than the dimension H3.

[0055] 17 , in third process P3, the first support portion 22 is caused to protrude from the first region 531 of the first side surface 53 of the sealing resin 50. At this time, the inclination angle α1 of the second region 532 of the first side surface 53 with respect to the first region 531 is set larger than the inclination angle β1 of the third region 533 of the first side surface 53 with respect to the first region 531. In addition, the second support portion 23 is caused to protrude from the fourth region 541 of the second side surface 54 of the sealing resin 50. At this time, the inclination angle α2 of the fifth region 542 of the second side surface 54 with respect to the fourth region 541 is set larger than the inclination angle β2 of the sixth region 543 of the second side surface 54 with respect to the fourth region 541.

[0056] 18 , a fourth process P4 is performed to cut each of the first support portion 22 and the second support portion 23. In the fourth process P4, the second surface 22B of the first support portion 22 and the fourth surface 23B of the second support portion 23 are supported by the support 81. Then, a compressive force P is applied to the top surface 51 of the sealing resin 50 by the load body 82, thereby cutting each of the first support portion 22 and the second support portion 23. In the fourth process P4, a first end surface 22C corresponding to the cut surface of the first support portion 22 is formed at the first end portion 223. At the same time, a second end surface 23C corresponding to the cut surface of the second support portion 23 is formed at the second end portion 233. The first support portion 22 is cut starting from the first recess 224. The second support portion 23 is cut starting from the second recess 234. Through the above processes, the semiconductor device A10 is obtained.

[0057] Next, an example of a method for manufacturing the semiconductor device A11 will be described with reference to Figures 19 and 20. Figures 19 and 20 correspond to Figure 9 showing the semiconductor device A10.

[0058] 19 , in a first process P1 for manufacturing the semiconductor device A11, grooves 29 recessed from the first surface 22A of the first support portion 22 and the third surface 23A of the second support portion 23 are formed in the first support portion 22 and the second support portion 23. When viewed in the first direction z, the grooves 29 formed in the first support portion 22 overlap the first recesses 224. In addition, when viewed in the first direction z, the grooves 29 formed in the second support portion 23 overlap the second recesses 234. The second process P2 and the third process P3 for manufacturing the semiconductor device A11 are similar to those for manufacturing the semiconductor device A10, and therefore will not be described here.

[0059] 20 , in fourth process P4 of manufacturing semiconductor device A11, first support portion 22 is cut starting from both first recess 224 and groove 29. Second support portion 23 is cut starting from both second recess 234 and groove 29. In first support portion 22, a part of inner circumferential surface 291 that defines groove 29 corresponds to first intermediate surface 223A of first end portion 223.

[0060] Next, the effects of the method for manufacturing the semiconductor device A10 will be described.

[0061] The manufacturing method of the semiconductor device A10 includes a first process P1 of forming a first lead 20 having a pad portion 21 and a first support portion 22, a second process P2 of joining a semiconductor element 10 to the pad portion 21, a third process P3 of forming a sealing resin 50, and a fourth process P4 of cutting the first support portion 22. In the third process P3, the pad portion 21 is exposed from a bottom surface 52 of the sealing resin 50. In the third process P3, a dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 to the second surface 22B of the first support portion 22 is made smaller than a dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the first surface 22A of the first support portion 22. In the fourth process P4, the second surface 22B is supported by a support 81, and then a compressive force P is applied to the top surface 51, thereby cutting the first support portion 22. In fourth process P4, first support portion 22 is formed with a first end surface 22C that faces one side in second direction x and is exposed from sealing resin 50. By adopting this configuration, the concentration of compressive stress acting from first support portion 22 to sealing resin 50 as first support portion 22 is cut in fourth process P4 shown in Figure 18 is reduced. Therefore, with this configuration, it is possible to reduce the stress concentration in sealing resin 50 that acts as first lead 20 is cut during the manufacture of semiconductor device A10.

[0062] In the first step P1, the cross-sectional area of ​​the first end 223 of the first support portion 22 along a direction perpendicular to the second direction x is reduced from the first main portion 221 to the first end surface 22C. By adopting this configuration, the area of ​​the first end surface 22C is reduced, which makes it easier to cut the first support portion 22 in the fourth step P4 shown in FIG.

[0063] In the first process P1 of the manufacturing process of the semiconductor device A10, a first recess 224 recessed from the second surface 22B is formed in the first support portion 22, including the first end portion 223. The first recess 224 is connected to the first main portion 221. This configuration allows the first support portion 22 to be cut smoothly in the fourth process P4 shown in FIG. 18 , starting from the first recess 224 while a compressive force P is applied to the top surface 51 of the sealing resin 50. Furthermore, the dimension h of the first end surface 22C of the first support portion 22 in the first direction z can be made smaller than the dimension b of the first end surface 22C in the third direction y. This further reduces the second moment of area about the first end surface 22C in the third direction y.

[0064] In the first process P1, the first connecting portion 222 of the first support portion 22 is inclined with respect to the mounting surface 211 in the second direction x away from the pad portion 21. By adopting this configuration, in the fourth process P4 shown in Fig. 18 , the concentration of compressive stress acting from the first support portion 22 to the sealing resin 50 as the first support portion 22 is cut is further reduced. This makes it possible to further reduce the stress concentration in the sealing resin 50 acting as the first lead 20 is cut.

[0065] In third process P3, in sealing resin 50, inclination angle α1 of second region 532 of first side surface 53 with respect to first region 531 of first side surface 53 is set to be larger than inclination angle β1 of third region 533 of first side surface 53 with respect to first region 531. By adopting this configuration, even if dimension H1 shown in FIG. 9 is larger than dimension H2 in third process P3 shown in FIG. 19 , it is possible to prevent chipping of sealing resin 50 when the molding die is removed.

[0066] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 21 to 26. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figures 21 and 22 show the sealing resin 50 in a see-through manner. In Figures 21 and 22, the outline of the sealing resin 50 is shown by imaginary lines.

[0067] In the semiconductor device A20, the configurations of the first support portion 22, the second support portion 23, the third support portion 24, and the fourth support portion 25 of the first lead 20 differ from those of the semiconductor device A10.

[0068] 21 and 22 , the first end 223 has two first recesses 224 that are individually recessed from both sides in the third direction y. Each of the two first recesses 224 is connected to the periphery of the first surface 22A of the first end 223 and the periphery of the second surface 22B of the first end 223. The second end 233 has two second recesses 234 that are individually recessed from both sides in the third direction y. Each of the two second recesses 234 is connected to the periphery of the third surface 23A of the second end 233 and the periphery of the fourth surface 23B of the second end 233.

[0069] 21 and 22 , the third end 243 has two third recesses 244 that are individually recessed from both sides in the third direction y. Each of the two third recesses 244 is connected to the periphery of the fifth surface 24A of the third end 243 and the periphery of the sixth surface 24B of the third end 243. The fourth end 253 has two fourth recesses 254 that are individually recessed from both sides in the third direction y. Each of the two fourth recesses 254 is connected to the periphery of the seventh surface 25A of the fourth end 253 and the periphery of the eighth surface 25B of the fourth end 253.

[0070] As shown in FIGS. 25 and 26 , the first end portion 223 is located between the second surface 22B and the first end surface 22C in the second direction x and has a first intermediate surface 223A connected to the second surface 22B. When viewed in the second direction x, the first intermediate surface 223A overlaps the first main portion 221. The first end surface 22C is located between the first intermediate surface 223A and the first surface 22A in the first direction z. The dimension of the first intermediate surface 223A in the second direction x is smaller than the dimension L1 of the second surface 22B of the first end portion 223. The first intermediate surface 223A is inclined in the first direction z toward the inside of the first end portion 223 with respect to the second surface 22B and is also connected to the first end surface 22C. The first intermediate surface 223A is covered with sealing resin 50. The first end surface 22C is spaced apart from the first region 531 of the first side surface 53 of the sealing resin 50 on the side where the pad portion 21 is located in the second direction x.

[0071] Next, a semiconductor device A21 according to a modified example of the second embodiment of the present disclosure will be described with reference to Fig. 27. Fig. 27 corresponds to Fig. 26 showing the semiconductor device A20. In the semiconductor device A21, the configuration of the first support portion 22 of the first lead 20 differs from that of the semiconductor device A20.

[0072] As shown in FIG. 27 , the first end portion 223 is located between the first surface 22A and the first end surface 22C in the second direction x and has a second intermediate surface 223B connected to the first surface 22A. When viewed in the second direction x, the second intermediate surface 223B overlaps the first main portion 221. The first end surface 22C is located between the first intermediate surface 223A and the second intermediate surface 223B in the first direction z. The dimension of the second intermediate surface 223B in the second direction x is smaller than the dimension of the first surface 22A of the first end portion 223 in the second direction x. The second intermediate surface 223B is inclined in the first direction z toward the inside of the first end portion 223 with respect to the first surface 22A and is also connected to the first end surface 22C. The second intermediate surface 223B is covered with sealing resin 50.

[0073] Next, an example of a method for manufacturing the semiconductor device A20 will be described with reference to Figures 28 to 30. Figures 28 to 30 correspond to Figure 23 showing the semiconductor device A20.

[0074] 28 , a first process P1 is performed to form a first lead 20 having a pad portion 21, a first support portion 22, and a second support portion 23. In the first process P1, two first recesses 224 are formed in the first end portion 223 of the first support portion 22, thereby reducing the cross-sectional area of ​​the first end portion 223 along a direction perpendicular to the second direction x from the first main portion 221 to the first end face 22C of the first support portion 22. In addition, two second recesses 234 are formed in the second end portion 233 of the second support portion 23, thereby reducing the cross-sectional area of ​​the second end portion 233 along a direction perpendicular to the second direction x from the second main portion 231 to the second end face 23C of the second support portion 23.

[0075] 28 , in the first step P1, grooves 29 recessed from the second surface 22B of the first support portion 22 and the fourth surface 23B of the second support portion 23 are formed in the first support portion 22 and the second support portion 23. The grooves 29 extend in the third direction y. The grooves 29 are defined by inner circumferential surfaces 291 that connect to either the second surface 22B or the fourth surface 23B. The grooves 29 formed in the first support portion 22 are located on the opposite side of the first main portion 221 from the two first recesses 224 in the second direction x. The grooves 29 formed in the second support portion 23 are located on the opposite side of the second main portion 231 from the two second recesses 234 in the second direction x.

[0076] Next, a second process P2 is performed in which the semiconductor element 10 is bonded to the mounting surface 211 of the pad portion 21. The second process P2 is similar to the second process P2 related to the manufacturing of the semiconductor device A10 shown in FIG.

[0077] 29 , a third process P3 is performed to form a sealing resin 50 that covers the pad portion 21, a portion of each of the first support portion 22 and the second support portion 23, and the semiconductor element 10. In the third process P3, the groove portions 29 formed in the first support portion 22 and the second support portion 23 are covered with the sealing resin.

[0078] 30 , a fourth process P4 is performed in which the first support portion 22 and the second support portion 23 are each cut. The first support portion 22 and the second support portion 23 are each cut starting from the groove portion 29. In the first support portion 22, a portion of the inner circumferential surface 291 that defines the groove portion 29 corresponds to the first intermediate surface 223A of the first end portion 223. By undergoing the above processes, the semiconductor device A20 is obtained.

[0079] Next, an example of a method for manufacturing the semiconductor device A21 will be described with reference to Fig. 31. Fig. 31 corresponds to Fig. 23 showing the semiconductor device A20.

[0080] 31 , in a first process P1 for manufacturing the semiconductor device A21, grooves 29 recessed from the first surface 22A and the second surface 22B of the first support portion 22 and the third surface 23A and the fourth surface 23B of the second support portion 23 are formed in the first support portion 22 and the second support portion 23. As viewed in the first direction z, the grooves 29 formed in the second surface 22B of the first support portion 22 overlap the grooves 29 formed in the first surface 22A of the first support portion 22. Additionally, as viewed in the first direction z, the grooves 29 formed in the fourth surface 23B of the second support portion 23 overlap the grooves 29 formed in the third surface 23A of the second support portion 23. The second process P2, the third process P3, and the fourth process P4 for manufacturing the semiconductor device A21 are similar to those for manufacturing the semiconductor device A20, and therefore will not be described here.

[0081] Next, the effects of the method for manufacturing the semiconductor device A20 will be described.

[0082] The manufacturing method of the semiconductor device A20 includes a first process P1 of forming a first lead 20 having a pad portion 21 and a first support portion 22, a second process P2 of joining a semiconductor element 10 to the pad portion 21, a third process P3 of forming a sealing resin 50, and a fourth process P4 of cutting the first support portion 22. In the third process P3, the pad portion 21 is exposed from a bottom surface 52 of the sealing resin 50. In the third process P3, a dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 to the second surface 22B of the first support portion 22 is made smaller than a dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the first surface 22A of the first support portion 22. In the fourth process P4, the second surface 22B is supported by a support 81, and then a compressive force P is applied to the top surface 51, thereby cutting the first support portion 22. In fourth process P4, a first end surface 22C is formed in the first support portion 22, facing one side in the second direction x and exposed from the sealing resin 50. Therefore, with this configuration, it is possible to reduce stress concentration in the sealing resin 50 that occurs when the first lead 20 is cut, even during the manufacture of the semiconductor device A20. Furthermore, the manufacturing method for the semiconductor device A20 has a configuration in common with the manufacturing method for the semiconductor device A10, thereby achieving the same effects as the manufacturing method for the semiconductor device A10.

[0083] The first end 223 of the first support portion 22 has a first intermediate surface 223A. When viewed in the second direction x, the first intermediate surface 223A overlaps the first main portion 221. The first end surface 22C of the first support portion 22 is located between the first intermediate surface 223A and the first surface 22A in the first direction z. The first intermediate surface 223A corresponds to a part of the inner circumferential surface 291 that defines the groove portion 29 formed in the first step P1. This configuration allows the dimension h of the first end surface 22C of the first support portion 22 in the first direction z to be smaller than the dimension b of the first end surface 22C in the third direction y. This reduces the second moment of area of ​​the first end surface 22C about the third direction y, making it easier to cut the first support portion 22 in the fourth step P4 shown in FIG. 30 .

[0084] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0085] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first step of forming a first lead having a pad portion having a mounting surface facing one side in a first direction and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a second step of bonding a semiconductor element to the mounting surface; a third step of forming a sealing resin that covers the pad portion, a portion of the first support portion, and the semiconductor element; and a fourth step of cutting the first support portion, wherein the sealing resin has a top surface facing the same side as the mounting surface in the first direction and a bottom surface facing the opposite side from the top surface in the first direction, and the first support portion has a first surface facing the same side as the mounting surface in the first direction and a second surface facing the opposite side from the first surface in the first direction, a first end surface of the sealing resin that faces one side in the second direction and is exposed from the sealing resin; a second end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a third end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a fourth ... fifth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a fifth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a fifth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a fifth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a fifth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a sixth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a sixth end surface of the sealing resin that faces the first side in the second direction and is exposed from the sealing resin; a sixth end surface of the sealing resin that faces the firstSupplementary Note 3. The method for manufacturing a semiconductor device according to Supplementary Note 1, wherein the first support portion has a first main portion including the first surface and the second surface, each covered with the sealing resin, a first connecting portion connecting the first main portion and the pad portion, and a first end portion located on the opposite side of the first main portion in the second direction from the first connecting portion and connected to the first main portion, the first end portion including the first surface covered with the sealing resin and the first end surface formed in the fourth step, and wherein in the first step, a cross-sectional area of ​​the first end portion along a direction perpendicular to the second direction is reduced from the first main portion to a position where the first end surface is formed in the fourth step. Supplementary Note 4. The method for manufacturing a semiconductor device according to Supplementary Note 3, wherein in the fourth step, the first end surface is formed such that a dimension of the first end surface in a third direction perpendicular to each of the first direction and the second direction is different from a dimension of the first end surface in the first direction. Supplementary Note 5. Appendix 4: The method for manufacturing a semiconductor device according to Appendix 4, wherein, in the fourth step, the first end face is formed so that a dimension of the first end face in the first direction is smaller than a dimension of the first end face in the third direction. Appendix 6: The method for manufacturing a semiconductor device according to Appendix 5, wherein, in the first step, a recessed portion recessed from the second surface is formed in the first support portion including the first end portion, and the recessed portion is connected to the first main portion. Appendix 7: The method for manufacturing a semiconductor device according to Appendix 6, wherein, in the first step, a groove portion recessed from the first surface and extending in the third direction is formed in the first support portion, and the groove portion overlaps the recessed portion as viewed in the first direction, and in the fourth step, the first support portion is cut using the groove portion as a starting point. Appendix 8: The method for manufacturing a semiconductor device according to Appendix 7, wherein the first support portion has an inner circumferential surface that defines the groove portion, and in the fourth step, the first end face is connected to the periphery of the inner circumferential surface. Appendix 9: 5. The method for manufacturing a semiconductor device according to claim 4, wherein in the first step, a recessed portion recessed from one side in the third direction is formed in the first support portion including the first end portion, and the recessed portion is connected to a peripheral edge of the first surface.Appendix 10. The method for manufacturing a semiconductor device according to Appendix 9, wherein in the first step, a groove recessed from the first surface and extending in the third direction is formed in the first support portion, the groove being located on the opposite side of the recessed portion to the first main portion in the second direction, and in the fourth step, the first support portion is cut using the groove as a starting point. Appendix 11. The method for manufacturing a semiconductor device according to any of Appendixes 4 to 10, wherein in the first step, the first coupling portion is inclined with respect to the mounting surface toward a side away from the pad portion in the second direction. Appendix 12. The method for manufacturing a semiconductor device according to Appendix 11, wherein the inclination angle of the first coupling portion with respect to the mounting surface is 50° or less. Appendix 13. the first lead has a second support portion located on the opposite side of the pad portion from the first support portion in the second direction and connected to the pad portion, the second support portion has a third surface facing the same side as the mounting surface in the first direction and a fourth surface facing the opposite side from the third surface in the first direction, in the third step, a portion of each of the third surface and the fourth surface is covered with the sealing resin, and the sealing resin is formed such that the dimension of the sealing resin in the first direction from the bottom surface to the fourth surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the third surface, in the fourth step, the fourth surface is supported by the support body and a load is applied to the top surface to cut the second support portion, and in the fourth step, a second end surface is formed in the second support portion that faces the opposite side to the first end surface in the second direction and is exposed from the sealing resin. The method for manufacturing a semiconductor device described in Appendix 13, wherein the sealing resin has a first side facing the same side as the first end face in the second direction, the first side including a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the second region with respect to the first region, wherein in the third step, each of the second region and the third region is inclined with respect to the first region, and in the fourth step, the first end face is exposed from the first region.Appendix 15. The method for manufacturing a semiconductor device according to Appendix 14, wherein in the third step, the sealing resin is formed so that an inclination angle of the second region relative to the first region is larger than an inclination angle of the third region relative to the first region. a first lead including a pad portion having a mounting surface facing one side in a first direction and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a semiconductor element bonded to the mounting surface; and a sealing resin covering a portion of the first lead and the semiconductor element, wherein the sealing resin has a top surface facing the same side as the mounting surface in the first direction and a bottom surface facing the opposite side from the top surface in the first direction and from which the pad portion is exposed, the first support portion has a first surface facing the same side as the top surface in the first direction and covered by the sealing resin, a second surface facing the opposite side from the first surface in the first direction and covered by the sealing resin, and a first end surface facing the second direction and exposed from the sealing resin, wherein the dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface, A semiconductor device in which a cross-sectional area of ​​the first support portion along a direction perpendicular to the second direction decreases from a side where the pad portion is located toward the first end face.Supplementary Note 17. The semiconductor device according to Supplementary Note 16, wherein a dimension of the first end face in the first direction is smaller than a dimension of the first end face in a third direction perpendicular to each of the first direction and the second direction, the first support portion is provided with a recessed portion recessed from the second surface, and the recessed portion is located between the second surface and the first end face in the second direction.

[0086] A10, A20: semiconductor device 10: semiconductor element 11: element surface 12: electrode 19: bonding layer 20: first lead 21: pad portion 211: mounting surface 212: exposed surface 22: first support portion 22A: first surface 22B: second surface 22C: first end surface 221: first main portion 222: first connecting portion 223: first end portion 223A: first intermediate surface 223B: second intermediate surface 224: first recessed portion 23: second support portion 23A: third surface 23B: fourth surface 23C: second end surface 231: second main portion 232: second connecting portion 233: second end portion 234: second recessed portion 24: third support portion 24A: fifth surface 24B: sixth surface 24C: Third end face 241: Third main portion 242: Third connecting portion 243: Third end portion 244: Third recessed portion 25: Fourth support portion 25A: Seventh surface 25B: Eighth surface 25C: Fourth end face 251: Fourth main portion 252: Fourth connecting portion 253: Fourth end portion 254: Fourth recessed portion 29: Groove portion 291: Inner peripheral surface 30: Second lead 30A: First terminal 30B: Second terminal 31: Inner portion 311: Connection surface 32: Outer portion 321: Mounting surface 40: Wire 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 531 to 533: First to third regions 54: Second side surface 541 to 543: Fourth region to sixth region 55: Third side surface 551 to 553: Seventh region to ninth region P1 to P4: First step to fourth step z: First direction x: Second direction y: Third direction

Claims

1. A method for manufacturing a semiconductor device comprising: a first step of forming a first lead having a pad portion having a mounting surface facing one side in a first direction, and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a second step of joining a semiconductor element to the mounting surface; a third step of forming a sealing resin covering the semiconductor element and a portion of each of the pad portion and the first support portion; and a fourth step of cutting the first support portion, wherein the sealing resin has a top surface facing the same side as the mounting surface in the first direction, and a bottom surface facing the opposite side to the top surface in the first direction, and the first support portion has a first surface facing the same side as the mounting surface in the first direction, and a second surface facing the opposite side to the first surface in the first direction, a third step of forming the sealing resin such that a portion of each of the first surface and the second surface is covered with the sealing resin, the pad portion is exposed from the bottom surface, and the dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface; a fourth step of cutting the first support portion by supporting the second surface on a support and applying a compressive force to the top surface; and a fourth step of forming a first end surface of the first support portion that faces one side in the second direction and is exposed from the sealing resin.

2. A method for manufacturing a semiconductor device as described in claim 1, wherein in the third step, the sealing resin is formed so that the dimension in the first direction of the sealing resin from the bottom surface to the second surface is 50% or less of the dimension in the first direction of the sealing resin from the top surface to the first surface.

3. The method for manufacturing a semiconductor device as described in claim 1, wherein the first support portion has a first main portion including the first surface and the second surface each covered with the sealing resin, a first connecting portion connecting the first main portion and the pad portion, and a first end portion located on the opposite side of the first connecting portion with respect to the first main portion in the second direction and connected to the first main portion, the first end portion including the first surface covered with the sealing resin and the first end face formed in the fourth step, and wherein in the first step, a cross-sectional area of ​​the first end portion along a direction perpendicular to the second direction is reduced from the first main portion to a position where the first end face is formed in the fourth step.

4. A method for manufacturing a semiconductor device as described in claim 3, wherein in the fourth step, the first end face is formed so that a dimension of the first end face in a third direction perpendicular to each of the first direction and the second direction is different from a dimension of the first end face in the first direction.

5. A method for manufacturing a semiconductor device as described in claim 4, wherein in the fourth step, the first end face is formed so that the dimension of the first end face in the first direction is smaller than the dimension of the first end face in the third direction.

6. A method for manufacturing a semiconductor device as described in claim 5, wherein in the first step, a recess recessed from the second surface is formed in the first support portion including the first end portion, and the recess is connected to the first main portion.

7. A method for manufacturing a semiconductor device as described in claim 6, wherein in the first step, a groove portion recessed from the first surface and extending in the third direction is formed in the first support portion, and when viewed in the first direction, the groove portion overlaps the recessed portion, and in the fourth step, the first support portion is cut using the groove portion as a starting point.

8. A method for manufacturing a semiconductor device as set forth in claim 7, wherein the first support portion has an inner circumferential surface that defines the groove portion, and in the fourth step, the first end surface is connected to the periphery of the inner circumferential surface.

9. A method for manufacturing a semiconductor device as described in claim 4, wherein in the first step, a recess recessed from one side in the third direction is formed in the first support portion including the first end portion, and the recess is connected to the peripheral edge of the first surface.

10. A method for manufacturing a semiconductor device as described in claim 9, wherein in the first step, a groove portion recessed from the first surface and extending in the third direction is formed in the first support portion, the groove portion being located on the opposite side of the recessed portion to the first main portion in the second direction, and in the fourth step, the first support portion is cut using the groove portion as a starting point.

11. A method for manufacturing a semiconductor device according to any one of claims 4 to 10, wherein in the first step, the first connecting portion is inclined relative to the mounting surface in the second direction toward a side moving away from the pad portion.

12. The method for manufacturing a semiconductor device according to claim 11, wherein the inclination angle of the first connecting portion with respect to the mounting surface is 50° or less.

13. The method for manufacturing a semiconductor device according to claim 11, wherein the first lead has a second support portion located on the opposite side of the first support portion with respect to the pad portion in the second direction and connected to the pad portion, the second support portion having a third surface facing the same side as the mounting surface in the first direction and a fourth surface facing the opposite side from the third surface in the first direction, in the third step, a portion of each of the third surface and the fourth surface is covered with the sealing resin, and the sealing resin is formed such that a dimension of the sealing resin in the first direction from the bottom surface to the fourth surface is smaller than a dimension of the sealing resin in the first direction from the top surface to the third surface, in the fourth step, the fourth surface is supported by the support body and a load is applied to the top surface, thereby cutting the second support portion, and in the fourth step, a second end surface is formed in the second support portion, which faces the opposite side to the first end surface in the second direction and is exposed from the sealing resin.

14. The method for manufacturing a semiconductor device as described in claim 13, wherein the sealing resin has a first side facing the same side as the first end face in the second direction, the first side including a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the second region with respect to the first region, wherein in the third step, each of the second region and the third region is inclined with respect to the first region, and in the fourth step, the first end face is exposed from the first region.

15. The method for manufacturing a semiconductor device according to claim 14, wherein in the third step, the sealing resin is formed so that an inclination angle of the second region relative to the first region is larger than an inclination angle of the third region relative to the first region.

16. A semiconductor device comprising: a first lead having a pad portion having a mounting surface facing one side in a first direction, and a first support portion connected to one side of the pad portion in a second direction perpendicular to the first direction; a semiconductor element bonded to the mounting surface; and a sealing resin covering a part of the first lead and the semiconductor element, wherein the sealing resin has a top surface facing the same side as the mounting surface in the first direction, and a bottom surface facing the opposite side from the top surface in the first direction and from which the pad portion is exposed, the first support portion has a first surface facing the same side as the top surface in the first direction and covered by the sealing resin, a second surface facing the opposite side from the first surface in the first direction and covered by the sealing resin, and a first end surface facing the second direction and exposed from the sealing resin, wherein the dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface, A semiconductor device, wherein a cross-sectional area of ​​the first support portion along a direction perpendicular to the second direction decreases from a side where the pad portion is located toward the first end surface.

17. The semiconductor device described in claim 16, wherein a dimension of the first end face in the first direction is smaller than a dimension of the first end face in a third direction perpendicular to each of the first direction and the second direction, the first support portion has a recessed portion recessed from the second surface, and the recessed portion is located between the second surface and the first end face in the second direction.

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