Liquid processing device and liquid processing method

Abstract

The purpose of the present invention is to provide a technology for recovering a processing liquid supplied to one surface of two main surfaces of a substrate, and preventing the processing liquid from flowing to the other surface.　A liquid processing device according to the present disclosure comprises: a holding part (31); a rotating part; a supply part; and recovery parts (60a, 60f). The holding part (31) holds a substrate (W). The rotating part rotates the holding part (31). The supply part supplies a processing liquid to the substrate (W) held by the holding part (31). The recovery parts (60a, 60f) recover the processing liquid supplied to the substrate (W). The holding part (31) includes: a first annular section (313) that supports the entire circumference of the lower-surface outer circumference of the substrate (W); and a second annular section (314) that surrounds the outer circumference of the substrate (W) and can prevent the processing liquid from flowing to the other surface.

Description

Liquid treatment apparatus and liquid treatment method

[0001] The present disclosure relates to a liquid treatment apparatus and a liquid treatment method.

[0002] Conventionally, a substrate processing apparatus has been known that is equipped with a recovery line that recovers processing liquid supplied to substrates such as semiconductor wafers (hereinafter also referred to as wafers) in order to reuse the processing liquid (see Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2008-091717

[0004] The present disclosure provides a technique for recovering a processing liquid supplied to one of the two main surfaces of a substrate while reducing the processing liquid from leaking onto the other surface.

[0005] A liquid processing apparatus according to one aspect of the present disclosure includes a holding unit, a rotating unit, a supply unit, and a recovery unit. The holding unit holds a substrate. The rotating unit rotates the holding unit. The supply unit supplies a processing liquid to the substrate held by the holding unit. The recovery unit recovers the processing liquid supplied to the substrate. The holding unit includes a first annular unit that supports the entire periphery of the outer periphery of the lower surface of the substrate, and a second annular unit that surrounds the outer periphery of the substrate.

[0006] According to the present disclosure, it is possible to recover the processing liquid supplied to one of the two main surfaces of the substrate while reducing the processing liquid from flowing over to the other surface.

[0007] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to a first embodiment. FIG. 2 is a schematic diagram showing an example of a specific configuration of a processing unit according to the first embodiment. FIG. 3 is a schematic diagram showing the configuration of a holding section according to the first embodiment. FIG. 4 is a schematic plan view showing the configuration of a holding section according to the first embodiment. FIG. 5 is a schematic enlarged view showing the configuration of a holding section according to the first embodiment. FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. 5. FIG. 7 is a flowchart showing an example of a substrate processing procedure performed by the substrate processing system according to the first embodiment. FIG. 8 is a schematic diagram showing an example of the operation of the substrate processing system according to the first embodiment. FIG. 9 is a schematic diagram showing an example of the operation of the substrate processing system according to the first embodiment. FIG. 10 is a schematic enlarged view showing the configuration of a holding section according to a second embodiment.

[0008] Hereinafter, a liquid treatment apparatus and a liquid treatment method according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. Furthermore, the embodiments can be appropriately combined as long as the processing content is not contradictory. Furthermore, the same components in the following embodiments will be assigned the same reference numerals, and redundant explanations will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In the drawings referred to below, for ease of understanding, the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, and an orthogonal coordinate system is shown in which the positive Z-axis direction is the vertically upward direction. The rotation direction around the vertical axis is also referred to as the θ direction.

[0011] Conventionally, a substrate processing apparatus has been known that is equipped with a recovery line that recovers processing liquid supplied to substrates such as semiconductor wafers (hereinafter also referred to as wafers) in order to reuse the processing liquid (see Patent Document 1).

[0012] However, in the above-described substrate processing apparatus, the processing liquid supplied to one of the two main surfaces of the substrate may flow over to the other surface of the substrate, which may result in, for example, removal of a film formed on the other surface, which may cause problems in subsequent processes.

[0013] Therefore, a technology is desired that can recover the processing liquid supplied to one of the two main surfaces of the substrate while reducing the amount of the processing liquid that flows onto the other surface.

[0014] First Embodiment <Outline of Substrate Processing System> First, a schematic configuration of a substrate processing system 1 according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to the first embodiment.

[0015] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0016] The carry-in / out station 2 includes a FOUP placement section 11 and a transfer section 12. On the FOUP placement section 11, a plurality of FOUPs F are placed, each accommodating a plurality of substrates, in the first embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0017] The transfer section 12 is provided adjacent to the FOUP placement section 11 and includes therein a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the FOUP F and the transfer section 14 using the wafer holding mechanism.

[0018] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0019] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0020] The processing unit 16 performs a given substrate processing on the wafer W transferred by the substrate transfer device 17. The processing unit 16 is an example of a liquid processing device.

[0021] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0022] The program may be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0023] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the FOUP F placed on the FOUP placement part 11 and places the removed wafer W on the transfer part 14. The wafer W placed on the transfer part 14 is then removed from the transfer part 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0024] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer part 14. Then, the processed wafer W placed on the transfer part 14 is returned to the FOUP F on the FOUP placement part 11 by the substrate transfer device 13.

[0025] <Configuration of Processing Unit> Next, the configuration of the processing unit 16 according to the first embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to the first embodiment. As shown in Fig. 2, the processing unit 16 includes a chamber 20, a substrate processing section 30, a first supply section 40, a second supply section 50, and a processing cup 60. The chamber 20 is an example of a processing container.

[0026] The chamber 20 has an internal space 20a that houses the substrate processing unit 30, the first supply unit 40, the second supply unit 50, and the processing cup 60. Substrate processing using a processing liquid is performed in the internal space 20a. A fan filter unit (FFU) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0027] Substrate processing unit 30 includes a holder 31, a support 32, a drive unit 33, and a transfer unit 34, and performs liquid processing on a placed wafer W. Holder 31 holds wafer W horizontally.

[0028] The holding part 31 includes a base part 311, a support member 312, a first annular part 313, and a second annular part 314. The support member 312 is a member extending in the vertical direction, with its base end supported by the base part 311 and its tip end supporting the first annular part 313 and the second annular part 314. The first annular part 313 and the second annular part 314 are integrally formed. The first annular part 313 supports the entire periphery of the lower surface of the wafer W. The second annular part 314 surrounds the periphery of the wafer W. Details of the holding part 31 will be described later.

[0029] The support column 32 is a member extending in the vertical direction, and has a base end rotatably supported by the drive unit 33, and a tip end that horizontally supports the holding unit 31. The drive unit 33 rotates the support column 32 around a vertical axis.

[0030] The transfer unit 34 has, for example, a cylindrical shape and is disposed within the through-hole 32a of the support 32. The transfer unit 34 can be raised and lowered by a lifting mechanism (not shown). A plurality of pins 34a are provided at the upper end of the transfer unit 34. When the wafer W is loaded into the processing unit 16, the transfer unit 34 is disposed at a transfer position higher than the holder 31. The wafer W is placed on the plurality of pins 34a of the transfer unit 34. The transfer unit 34 is then lowered by a lifting mechanism (not shown). As a result, the wafer W is transferred from the plurality of pins 34a to the first annular portion 313 of the holder 31. Thereafter, when the substrate processing is completed, the transfer unit 34 is raised by a lifting mechanism (not shown). As a result, the wafer W is transferred from the first annular portion 313 to the plurality of pins 34a.

[0031] The substrate processing unit 30 rotates the support columns 32 using the drive unit 33, thereby rotating the holder 31 supported by the support columns 32. The negative pressure generated by this rotation presses the wafer W placed on the first annular portion 313 of the holder 31 against the first annular portion 313, thereby holding the wafer W on the holder 31. The wafer W held on the holder 31 rotates together with the holder 31. The drive unit 33 is an example of a rotation unit.

[0032] The first supply unit 40 supplies the processing liquid to the upper surface of the wafer W held by the holder 31. The first supply unit 40 includes a nozzle 41, an arm 42 that horizontally supports the nozzle 41, and a pivoting and lifting mechanism 43 that pivots and raises and lowers the arm 42.

[0033] The nozzle 41 is connected to a processing liquid supply source 46 via a valve 44 and a flow rate regulator 45. The processing liquid supply source 46 is a tank that stores a processing liquid. This processing liquid is, for example, HF (hydrofluoric acid), HF / HNO ３ (hydrofluoric nitric acid), HF / HNO ３ / CH ３ COOH (hydrofluoric acid-nitric acid-acetic acid mixed acid), SC1 (ammonia-hydrogen peroxide solution mixed liquid), TMAH (tetramethylammonium hydroxide), etc. are used.

[0034] Furthermore, on the upper surface of the wafer W, for example, a thin film (for example, an oxide film, a nitride film, or a silicon film) that can be etched by the above-mentioned processing liquid is formed.

[0035] The second supply unit 50 supplies DIW (DeIonized Water) to the underside of the wafer W held by the holder 31. The second supply unit 50 includes a nozzle 51. The nozzle 51 is disposed in a through-hole 32a formed in the support 32. The nozzle 51 is connected to a DIW supply source 56 via a valve 54 and a flow rate regulator 55. The DIW supply source 56 is a tank that stores DIW.

[0036] Processing cup 60 is provided around holder 31 and collects liquid scattered from wafer W due to rotation of holder 31. Processing cup 60 is an example of a recovery unit that recovers processing liquid supplied to wafer W. Processing cup 60 may have a multi-stage configuration concentrically arranged around the center of rotation of wafer W held and rotated by substrate processing unit 30. Specifically, processing cup 60 includes recovery cup 60a and drainage cup 60f. Drainage cup 60f is an example of a cup.

[0037] The recovery cup 60a has a shape that surrounds the lower and outer periphery of the wafer W and leaves the upper part of the wafer W open. The recovery cup 60a is provided outside the drain cup 60f. The recovery cup 60a forms a recovery space 60c below and outside the outer periphery of the wafer W. A recovery port 60b is formed at the bottom of the recovery space 60c. The processing liquid discharged from the recovery port 60b flows into a recovery line 60e via a valve 60d.

[0038] An exhaust port 66a is formed in the collection cup 60a, opening above the collection port 60b. An exhaust path from the exhaust port 66a is connected to an exhaust device 66c having a vacuum pump, a pressure control valve, and the like.

[0039] The drainage cup 60f is provided inside the collection cup 60a. The drainage cup 60f has an inclined wall that extends along the inclined wall of the collection cup 60a, and the inclined wall approaches the inclined wall of the collection cup 60a as it approaches the upper end.

[0040] The drain cup 60f forms a drain space 60h outside and below the outer periphery of the wafer W. A drain port 60g is formed at the bottom of the drain space 60h. The DIW discharged from the drain port 60g flows into a drain line 60j via a valve 60i.

[0041] An exhaust port 66b is formed in the drain cup 60f, opening above the drain outlet 60g. An exhaust path from the exhaust port 66b is connected to an exhaust device 66c having a vacuum pump, a pressure control valve, etc. The exhaust ports 66a, 66b and the exhaust device 66c function as an exhaust section 66 that exhausts gas from the internal space 20a.

[0042] In the processing unit 16 configured as described above, for example, when processing the wafer W by discharging a processing liquid onto the wafer W, the control unit 18 controls the drive unit 33 of the substrate processing unit 30 to rotate the holder 31 at a predetermined rotation speed, and then opens the valve 44. As a result, the processing liquid supplied from the processing liquid supply source 46 is discharged from the nozzle 41 onto the top surface of the wafer W.

[0043] As a result, the processing liquid supplied to the upper surface of the wafer W is thrown outward from the outer periphery of the upper surface of the wafer W by the centrifugal force caused by the rotation of the wafer W, and flows from the recovery space 60c through the recovery port 60b into the recovery line 60e.

[0044] Furthermore, for example, when processing the wafer W by discharging DIW onto the wafer W, the control unit 18 similarly controls the drive unit 33 to rotate the holder 31 at a predetermined rotation speed, and then opens the valve 54. As a result, the DIW supplied from the DIW supply source 56 is discharged from the nozzle 51 onto the underside of the wafer W.

[0045] As a result, the DIW supplied to the wafer W is thrown outward from the outer periphery of the lower surface of the wafer W by the centrifugal force caused by the rotation of the wafer W, and flows from the drain space 60h through the drain port 60g into the drain line 60j.

[0046] Next, the detailed configuration of the holding unit 31 according to the first embodiment will be described with reference to FIGS. 3 to 6. FIG. 3 is a schematic diagram showing the configuration of the holding unit 31 according to the first embodiment. FIG. 4 is a schematic plan view showing the configuration of the holding unit 31 according to the first embodiment. FIG. 5 is a schematic enlarged view showing the configuration of the holding unit 31 according to the first embodiment. FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. 5. Note that the ejection unit 3131 is omitted from FIGS. 3 and 4.

[0047] As described above, the holding portion 31 includes the base portion 311, the support member 312, the first annular portion 313, and the second annular portion 314. The base portion 311 is a flat circular member and is supported by the support portion 32 (see FIG. 2 ). The support member 312 is provided on the upper surface of the base portion 311 and supports the first annular portion 313 and the second annular portion 314.

[0048] The first annular portion 313 and the second annular portion 314 are formed, for example, by a single annular member. Specifically, the first annular portion 313 is located on the radially inner side of the single annular member, and the second annular portion 314 is located on the radially outer side. The first annular portion 313 supports the outer periphery of the lower surface of the wafer W. The second annular portion 314 surrounds the outer periphery of the wafer W. The second annular portion 314 is provided outside the outer periphery of the first annular portion 313.

[0049] The processing liquid supplied to the upper surface of the wafer W by the first supply part 40 spreads over the entire upper surface of the wafer W due to centrifugal force caused by the rotation of the wafer W. If the processing unit 16 does not include the second annular part 314, the processing liquid that has spread over the entire upper surface of the wafer W may flow from the outer periphery of the upper surface to the lower surface of the wafer W. If the processing liquid flows over to the lower surface of the wafer W, a film formed on the lower surface by the processing liquid may be removed, which may cause problems in subsequent processes.

[0050] Therefore, the processing unit 16 according to the first embodiment is provided with a second annular portion 314 that surrounds the outer periphery of the wafer W. As a result, the processing liquid that is supplied to the upper surface of the wafer W by the first supply unit 40 and spreads over the entire upper surface of the wafer W spreads over the upper surface 314a of the second annular portion 314 that surrounds the outer periphery of the wafer W, and is recovered by flowing from the recovery space 60c through the recovery port 60b into the recovery line 60e.

[0051] Therefore, according to the processing unit 16 of the first embodiment, the processing liquid supplied to one of the upper and lower surfaces of the wafer W (here, the upper surface) is collected in the collection cup 60a, while the second annular portion 314 surrounds the outer periphery of the wafer W, thereby reducing the amount of the processing liquid flowing over to the other surface (here, the lower surface).

[0052] 5, the upper surface 314a of the second annular portion 314 is located at a higher position than the upper surface 313a of the first annular portion 313. When the height of the upper surface 314a of the second annular portion 314 relative to the upper surface 313a of the first annular portion 313 is Da and the thickness of the wafer W is Db, Da is equal to or less than Db / 2. When Da is Db / 2, the upper surface 314a of the second annular portion 314 is located at the outermost edge of the wafer W (the location that protrudes most in the radial direction).

[0053] If Da is greater than Db / 2, in other words, if the upper surface 314a of the second annular portion 314 is positioned higher than the outermost peripheral edge of the wafer W, the processing liquid that has spread over the entire upper surface of the wafer W may be stopped by the outer surface of the second annular portion 314 and return to the upper surface of the wafer W. In the processing unit 16 according to the first embodiment, Da is equal to or less than Db / 2, so that the processing liquid that has spread over the entire upper surface of the wafer W is not stopped by the outer surface of the second annular portion 314 and is more likely to flow to the upper surface 314a of the second annular portion 314. In addition, the processing liquid that collides with the second annular portion 314 can be reduced from bouncing back onto the upper surface of the wafer W.

[0054] 5 and 6 , a discharge unit 3131 that discharges an inert gas is provided inside the first annular portion 313. The discharge unit 3131 has a plurality of discharge ports 3131a that open to the upper surface 313a of the first annular portion 313, and discharges the inert gas from the discharge ports 3131a between the wafer W and the second annular portion 314. The locations where the plurality of discharge ports 3131a open are outward from the location where the wafer W is placed. The plurality of discharge ports 3131a are connected to an inert gas supply source 3131c via a valve 3131b. The inert gas supply source 3131c supplies the inert gas to the plurality of discharge ports 3131a. This can reduce the intrusion of the processing liquid supplied to the upper surface of the wafer W between the wafer W and the second annular portion 314.

[0055] The second annular portion 314 further includes an annular guide portion 3141. The guide portion 3141 is located radially outward of the second annular portion 314. The guide portion 3141 extends outward from the second annular portion 314. The upper surface of the guide portion 3141 is flush with the upper surface 314a of the second annular portion 314. The lower surface of the guide portion 3141 is located higher than the lower surface of the second annular portion 314. The guide portion 3141 is located above the drain cup 60f. The guide portion 3141 guides the processing liquid supplied to the wafer W into the collection cup 60a. With this configuration, the processing liquid supplied to the upper surface of the wafer W is more likely to flow through the guide portion 3141 of the second annular portion 314 and into the collection space 60c (see FIG. 2).

[0056] <Details of Substrate Processing> Next, details of the substrate processing according to the first embodiment will be described with reference to Fig. 7. Fig. 7 is a flowchart showing an example of a procedure for substrate processing executed by the substrate processing system 1 according to the first embodiment. Fig. 8 is a schematic diagram showing an example of operation of the substrate processing system 1 according to the first embodiment. Fig. 9 is a schematic enlarged view showing an example of operation of the substrate processing system 1 according to the first embodiment.

[0057] In the substrate processing according to the first embodiment, first, the control unit 18 controls the exhaust unit 66 and the like to set the exhaust amount of the internal space 20a to a first exhaust amount (step S101).

[0058] Next, the control unit 18 controls the transfer units 12, 15, etc. to load the wafer W into the processing unit 16 (step S102). The wafer W is placed on the pins 34a of the transfer unit 34, and then the control unit 18 controls the lifting mechanism (not shown) to transfer the wafer W from the pins 34a to the first annular portion 313 of the holder 31, where it is held by the holder 31. The control unit 18 then controls the substrate processing unit 30, etc. to start rotating the wafer W at a given rotation speed (step S103). Next, the control unit 18 controls the exhaust unit 66, etc. to change the exhaust volume of the internal space 20a to a second exhaust volume that is smaller than the first exhaust volume (step S104).

[0059] Next, the control unit 18 controls the discharge unit 3131 and the like to start supplying the inert gas between the wafer W and the second annular unit 314 (step S105).

[0060] Next, the control unit 18 controls the first supply unit 40, the second supply unit 50, etc. to perform a liquid supply process of supplying the processing liquid and DIW to the wafer W held in the holder 31 (step S106). Specifically, the control unit 18 controls the first supply unit 40 to start supplying the processing liquid to the upper surface of the wafer W at a given flow rate (see FIG. 8). The processing liquid supplied to the upper surface of the wafer W passes through the recovery space 60c and flows into the recovery line 60e from the recovery port 60b (see FIG. 9). The control unit 18 also controls the second supply unit 50 to start supplying the DIW to the lower surface of the wafer W at a given flow rate. The DIW supplied to the lower surface of the wafer W passes through the drain space 60h and flows into the drain line 60j from the drain port 60g (see FIG. 9).

[0061] As described above, the processing unit 16 includes the second annular portion 314 surrounding the outer periphery of the wafer W. This allows the processing liquid supplied to one of the upper and lower surfaces of the wafer W (here, the upper surface) to be collected in the collection cup 60a while preventing the processing liquid from flowing over to the other surface (here, the lower surface). Furthermore, by rotating the wafer W using the drive unit 33, the upper surface side of the wafer W is under positive pressure and the lower surface side is under negative pressure, improving adhesion between the lower surface side of the wafer W held by the holder 31 and the first annular portion 313. This further reduces the likelihood of the processing liquid flowing over to the other surface (here, the lower surface) of the wafer W.

[0062] Thereafter, the control unit 18 controls the first supply unit 40, the second supply unit 50, etc. to stop the supply of the processing liquid and DIW to the wafer W.

[0063] Next, the control unit 18 controls the substrate processing unit 30 and the like to perform a drying process on the wafer W by spin drying by increasing the rotation speed of the wafer W (step S107). Next, the control unit 18 controls the discharge unit 3131 and the like to stop the supply of the inert gas (step S108).

[0064] Next, the control unit 18 controls the substrate processing unit 30 and the like to stop the rotation of the wafer W (step S109). Finally, the control unit 18 controls the lifting mechanism (not shown) and the like to transfer the wafer W from the first annular unit 313 to the pins 34a, and controls the transfer units 12 and 15 and the like to unload the wafer W from the processing unit 16 (step S110), thereby completing the series of substrate processing operations.

[0065] In this way, the control unit 18 controls the drive unit 33 to start rotating the wafer W held in the holding unit 31, then controls the discharge unit 3131 to start discharging the inert gas, and then controls the first supply unit 40 and the second supply unit 50 to start supplying the processing liquid to the wafer W.

[0066] If the wafer W is held by the holder 31 after the start of the inert gas discharge, the inert gas may affect the position of the wafer W, thereby reducing the occurrence of positional deviation of the wafer W. Therefore, by starting the discharge of the inert gas after the wafer W is held by the holder 31 as described above, it is possible to reduce the occurrence of positional deviation of the wafer W.

[0067] In addition, the control unit 18 controls the first supply unit 40 and the second supply unit 50 to stop the supply of processing liquid to the wafer W, then controls the discharge unit 3131 to stop the discharge of inert gas, and then controls the drive unit 33 to stop the rotation of the wafer W held in the holding unit 31.

[0068] If the discharge of the inert gas is stopped after the rotation of the wafer W is stopped, the position of the wafer W may be shifted from the desired position due to the influence of the inert gas. Therefore, by stopping the rotation of the wafer W after stopping the discharge of the inert gas as described above, the occurrence of the shift in the position of the wafer W can be reduced.

[0069] In addition, before the holding unit 31 holds the wafer W, the control unit 18 controls the exhaust unit 66 to exhaust the internal space 20a at a first exhaust rate, and after controlling the drive unit 33 to rotate the holding unit 31 holding the wafer W, the control unit 18 controls the exhaust unit 66 to change the exhaust rate of the internal space 20a to a second exhaust rate.

[0070] In the chamber 22, the amount of exhaust in the internal space 20a decreases as the rotation speed of the wafer W increases. Specifically, before the wafer W is held by the holder 31 and rotated by the drive unit 33, the amount of exhaust in the internal space 20a is small. When the wafer W is subsequently rotated, the amount of exhaust in the internal space 20a gradually increases. Before the wafer W is rotated, no negative pressure is generated due to rotation, so it is difficult to achieve a relationship in which the upper surface of the wafer W is under positive pressure and the lower surface of the wafer W is under negative pressure. Therefore, as described above, by controlling the exhaust unit 66 to change the amount of exhaust in the internal space 20a before and after the rotation of the wafer W, it becomes easier to maintain negative pressure on the lower surface of the wafer W.

[0071] After rotating the wafer W by the drive unit 33, the control unit 18 may control the exhaust unit 66 to adjust the exhaust amount according to the rotation speed.

[0072] As described above, the processing unit 16 is provided with a second annular portion 314 that surrounds the outer periphery of the wafer W, so that the processing liquid supplied to one of the upper and lower surfaces of the wafer W can be collected in the collection cup 60a while reducing the amount of the processing liquid flowing over to the other surface.

[0073] Second Embodiment In the first embodiment described above, an example was described in which the guide portion 3141 extending outward from the second annular portion 314 guides the treatment liquid to the collection cup 60a. However, the present invention is not limited to this, and a guide portion that guides DIW to the drainage cup 60f may be provided. Figure 10 is a schematic enlarged view showing the configuration of the holder 31 according to the second embodiment.

[0074] The guide portion 3132 is provided on the lower surface of the first annular portion 313 and becomes narrower as it extends vertically downward toward the base portion 311. With this configuration, the DIW supplied to the lower surface of the wafer W passes through the guide portion 3132 of the first annular portion 313 and easily flows into the drainage space 60h (see FIG. 2).

[0075] (Other Embodiments) In the above-described first and second embodiments, examples have been described in which the processing liquid is supplied to the upper surface of the wafer W and DIW is supplied to the lower surface of the wafer W, but this is not limiting. For example, the present disclosure is also applicable to cases in which the processing liquid is supplied to both the upper and lower surfaces of the wafer W, or to cases in which the processing liquid is supplied only to the lower surface of the wafer W. When the processing liquid is supplied to both the upper and lower surfaces of the wafer W, providing the second annular portion 314 surrounding the outer periphery of the wafer W can reduce the processing liquid supplied to one of the upper and lower surfaces of the wafer W from leaking onto the other surface of the wafer W. Similarly, when the processing liquid is supplied only to the lower surface of the wafer W, providing the second annular portion 314 surrounding the outer periphery of the wafer W can reduce the processing liquid from leaking onto the upper surface of the wafer W.

[0076] In the first and second embodiments described above, the discharge unit 3131 that discharges the inert gas is provided in the first annular portion 313, but this is not limiting. For example, the discharge unit may be provided inside the inclined wall of the drainage cup 60f. In this case, the discharge unit discharges the inert gas above the drainage cup 60f. This configuration can reduce the flow of processing liquid between the second annular portion 314 and the drainage cup 60f.

[0077] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0078] The present disclosure may have the following configurations: (1) A liquid processing apparatus comprising: a holding unit that holds a substrate; a rotation unit that rotates the holding unit; a supply unit that supplies a processing liquid to the substrate held by the holding unit; and a recovery unit that recovers the processing liquid supplied to the substrate, wherein the holding unit comprises: a first annular unit that supports the entire circumference of the outer periphery of the lower surface of the substrate; and a second annular unit that surrounds the outer periphery of the substrate. (2) The liquid processing apparatus according to (1), wherein the supply unit supplies the processing liquid to the upper surface of the substrate. (3) The liquid processing apparatus according to (1), wherein the supply unit supplies the processing liquid to the lower surface of the substrate. (4) The liquid processing apparatus according to (1), wherein the supply unit includes: a first supply unit that supplies the processing liquid to the upper surface of the substrate; and a second supply unit that supplies the processing liquid to the lower surface of the substrate. (5) The liquid processing apparatus according to any one of (1) to (4), wherein an upper surface of the second annular portion is located at a position higher than an upper surface of the first annular portion, and wherein, when the height of the upper surface of the second annular portion relative to the upper surface of the first annular portion is Da and the thickness of the substrate is Db, Da is Db / 2 or less. (6) The liquid processing apparatus according to any one of (1) to (4), wherein the second annular portion includes a guide portion extending outward from the second annular portion and guiding the processing liquid supplied to the substrate to the recovery portion. (7) The liquid processing apparatus according to (6), wherein the recovery portion includes a cup provided around the holding portion, and the guide portion is located above the cup. (8) The liquid processing apparatus according to any one of (1) to (6), wherein the first annular portion further includes a discharge portion discharging an inert gas between the substrate and the second annular portion. (9) The liquid processing apparatus according to (8), further comprising a control unit, wherein the control unit controls the rotation unit to start rotation of the substrate held by the holding unit, then controls the discharge unit to start discharging the inert gas, and then controls the supply unit to start supplying the processing liquid to the substrate.(10) The liquid processing apparatus according to (8), further comprising a control unit, wherein the control unit controls the supply unit to stop supply of the processing liquid to the substrate, and then controls the discharge unit to stop discharge of the inert gas, and then controls the rotation unit to stop rotation of the substrate held by the holder. (11) The liquid processing apparatus according to any one of (1) to (10), further comprising: a processing vessel having an internal space in which the holder is accommodated, and in which substrate processing using the processing liquid is performed in the internal space; an exhaust unit that exhausts gas from the internal space; and a control unit, wherein the control unit controls the exhaust unit to exhaust the internal space at a first exhaust rate before the holder holds the substrate, and controls the rotation unit to rotate the holder holding the substrate, and then controls the exhaust unit to change the exhaust rate to a second exhaust rate that is smaller than the first exhaust rate. (12) A liquid processing method comprising: a step of holding a substrate using a holding unit that holds a substrate; a step of rotating the holding unit using a rotation unit that rotates the holding unit; a step of supplying the processing liquid to the substrate using a supply unit that supplies the processing liquid to the substrate held by the holding unit; and a step of recovering the processing liquid supplied to the substrate using a recovery unit that recovers the processing liquid supplied to the substrate, wherein the holding unit comprises: a first annular portion that supports the entire circumference of the outer periphery of the lower surface of the substrate; and a second annular portion that surrounds the outer periphery of the substrate.

[0079] W: wafer (an example of a substrate) 1: substrate processing system 4: control device 16: processing unit (an example of a liquid processing apparatus) 18: control unit 19: memory unit 31: holding unit 33: driving unit (an example of a rotating unit) 40: first supply unit 41: nozzle 50: second supply unit 51: nozzle 60: processing cup (an example of a recovery unit) 60a: recovery cup 60f: drain cup (an example of a cup) 60e: recovery line 313: first annular unit 314: second annular unit

Claims

1. A liquid processing apparatus comprising: a holding section for holding a substrate; a rotation section for rotating the holding section; a supply section for supplying a processing liquid to the substrate held by the holding section; and a recovery section for recovering the processing liquid supplied to the substrate, wherein the holding section comprises a first annular section for supporting the entire circumference of the outer periphery of the underside of the substrate, and a second annular section for surrounding the outer periphery of the substrate.

2. The liquid processing apparatus according to claim 1, wherein the supply section supplies the processing liquid to the upper surface of the substrate.

3. The liquid processing apparatus according to claim 1, wherein the supply section supplies the processing liquid to the lower surface of the substrate.

4. The liquid processing apparatus according to claim 1, wherein the supply section includes: a first supply section that supplies the processing liquid to an upper surface of the substrate; and a second supply section that supplies the processing liquid to a lower surface of the substrate.

5. A liquid processing apparatus as described in any one of claims 1 to 4, wherein an upper surface of the second annular portion is provided at a position higher than an upper surface of the first annular portion, and when the height of the upper surface of the second annular portion relative to the upper surface of the first annular portion is Da and the thickness of the substrate is Db, Da is Db / 2 or less.

6. A liquid processing apparatus as described in any one of claims 1 to 4, wherein the second annular portion is provided with a guide portion extending outward from the second annular portion and guiding the processing liquid supplied to the substrate to the recovery portion.

7. The liquid treatment device according to claim 6, wherein the recovery section includes a cup provided around the holding section, and the induction section is located above the cup.

8. A liquid processing apparatus according to any one of claims 1 to 4, wherein the first annular portion further comprises an outlet portion for injecting an inert gas between the substrate and the second annular portion.

9. A liquid processing apparatus as described in claim 8, further comprising a control unit, wherein the control unit controls the rotation unit to start rotation of the substrate held by the holding unit, and then controls the discharge unit to start discharging the inert gas, and then controls the supply unit to start supplying the processing liquid to the substrate.

10. A liquid processing apparatus as described in claim 8, further comprising a control unit, which controls the supply unit to stop the supply of the processing liquid to the substrate, then controls the discharge unit to stop the discharge of the inert gas, and then controls the rotation unit to stop the rotation of the substrate held by the holding unit.

11. A liquid processing apparatus as described in any one of claims 1 to 4, further comprising: a processing vessel having an internal space in which the holding part is housed, and in which substrate processing is performed using the processing liquid in the internal space; an exhaust part which exhausts gas from the internal space; and a control part, wherein the control part controls the exhaust part to exhaust the internal space at a first exhaust amount before the holding part holds the substrate, and controls the rotation part to rotate the holding part holding the substrate, and then controls the exhaust part to change the exhaust amount to a second exhaust amount less than the first exhaust amount.

12. A liquid processing method comprising the steps of: holding a substrate using a holding part that holds a substrate; rotating the holding part using a rotation part that rotates the holding part; supplying the processing liquid to the substrate using a supply part that supplies the processing liquid to the substrate held in the holding part; and recovering the processing liquid supplied to the substrate using a recovery part that recovers the processing liquid supplied to the substrate, wherein the holding part comprises a first annular part that supports the entire circumference of the outer periphery of the underside of the substrate, and a second annular part that surrounds the outer periphery of the substrate.

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