Semiconductor device and module unit

Abstract

Provided is a semiconductor device or a module unit which, in cases when there is a possibility of overcurrent, makes it possible to break the current path.　The semiconductor device or the module unit comprises a wiring layer, a holding layer, a plurality of semiconductor elements located between the wiring layer and the holding layer and having gate electrodes, and a plurality of temperature fuses electrically connected to the plurality of semiconductor elements. The plurality of temperature fuses are electrically connected to the gate electrodes.

Description

Semiconductor device and module unit

[0001] The present disclosure relates to a semiconductor device and a module unit.

[0002] Patent Document 1 discloses a power module including a plurality of transistors and a plurality of electrical fuses for each of the transistors between a negative terminal N and a positive terminal P, the plurality of electrical fuses including an electrical fuse electrically connected to a drain electrode of each of the transistors and an electrical fuse electrically connected to a source electrode of each of the transistors.

[0003] Patent No. 7154907

[0004] In the past, a current path was interrupted when an electrical fuse electrically connected to a semiconductor element detected an overcurrent, but this interruption was only performed after the overcurrent occurred.

[0005] An object of the present disclosure is to provide a semiconductor device or module unit that can cut off a current path when there is a risk of an overcurrent occurring.

[0006] In order to solve the above problems, in one aspect of the present disclosure, a semiconductor device or module unit includes a wiring layer, a retention layer, a plurality of semiconductor elements each having a gate electrode and positioned between the wiring layer and the retention layer, and a plurality of thermal fuses electrically connected to the plurality of semiconductor elements, and the plurality of thermal fuses are electrically connected to the gate electrode.

[0007] According to the present disclosure, it is possible to provide a semiconductor device or module unit that can cut off a current path when there is a risk of an overcurrent occurring.

[0008] 1 is a top view schematically illustrating a semiconductor device 10 according to a first embodiment. FIG. 2 is a cross-sectional view schematically illustrating the semiconductor device 10 according to the first embodiment. FIG. 3 is an equivalent circuit diagram of a semiconductor circuit including a thermal fuse 20 according to the first embodiment. FIG. 4 is a block configuration diagram illustrating a module unit 100 according to a second embodiment. FIG. 5 is a cross-sectional view schematically illustrating a semiconductor device 110 according to the second embodiment. FIG. 6 is an equivalent circuit diagram of a semiconductor circuit including a thermal fuse 20 according to the second embodiment. FIG. 7 is a cross-sectional view schematically illustrating a semiconductor device 10 including a thermal fuse 20 according to a modified example. FIG. 8 is a block configuration diagram showing an example of a control system employing a semiconductor device according to an embodiment of the present disclosure. FIG. 9 is a circuit diagram showing an example of a control system employing a semiconductor device according to an embodiment of the present disclosure. FIG. 10 is a block configuration diagram showing another example of a control system employing a semiconductor device according to an embodiment of the present disclosure.

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings, but the invention according to the claims is not limited to these embodiments. Furthermore, not all of the combinations of the configurations described in the embodiments are necessarily required to solve the problems. Furthermore, each configuration of the present disclosure is described to the extent that it does not interfere with the solution of the problems of the present disclosure. Note that identical components are designated by the same reference numerals to avoid redundant description.

[0010] Additionally, as will be apparent to those skilled in the art, features shown in the drawings are not necessarily drawn to scale, even if not otherwise stated herein. It should also be noted that one feature of one embodiment may be used in another embodiment. Descriptions of well-known elements and processing techniques may be omitted so as not to unnecessarily obscure the embodiments of the present disclosure. The examples used herein are merely intended to aid in the understanding of the present disclosure and further enable those skilled in the art to practice the embodiments of the present disclosure. Therefore, the embodiments and examples herein should not be construed as limiting the scope of the present disclosure, which is defined solely by the claims and applicable law.

[0011] Terms such as "first," "second," and the like are used to describe various elements used herein, but the elements are not limited by these terms. Terms such as first, second, and the like are used only to distinguish one element from another. For example, a first element could be referred to as a second element, and a second element could be referred to as a first element, without departing from the scope of the present disclosure. As used herein, the term "and / or" includes any or all combinations of one or more of the listed items.

[0012] In this disclosure, unless otherwise defined, one side in the stacking direction of the semiconductor device (the direction perpendicular to the wiring layers) will be described as "upper" and the other side as "lower." In particular, "upper" and "lower" are defined as the wiring layer 11 side as viewed from the wiring layer 12 of the semiconductor device 10 in FIG. 2 being the upper side, and the wiring layer 12 side as viewed from the wiring layer 11 being the lower side. Of the two main surfaces of a layer, substrate, or other member, the upper surface will be described as the upper surface, and the lower surface will be described as the lower surface. These "upper" and "lower" directions are not limited to the direction of gravity or the direction in which the semiconductor device is attached to a substrate or the like when mounted. Note that this specification uses the term "top view," but this may also be rephrased as "planar view."

[0013] When an element, such as a layer, region, or substrate, is referred to as being "on" another element, it is understood that it can be directly on the other element, or intervening elements may be present. When an element is referred to as being "connected" or "coupled" to another element, it is understood that it can be directly connected or coupled to the other element, or intervening elements may be present.

[0014] The terms used herein are intended to describe particular embodiments only and are not intended to limit the disclosure. As used herein, the terms "comprise" and "include" refer to the presence of stated elements but do not exclude the presence of one or more other elements.

[0015] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Terms used herein should be interpreted to have a meaning consistent with the context of the present specification and the relevant art. Furthermore, unless otherwise defined herein, it should be understood that terms used herein should not be interpreted in an idealized or overly formal sense. Furthermore, members that are electrically connected herein may also be thermally connected.

[0016] 1 and 2 , a semiconductor device 10 according to this embodiment includes wiring layers 11, 12, and 13, an insulating layer 14 between the wiring layers 11 and 12, two transistors 15 disposed within the insulating layer 14, a bonding layer 16 connecting the wiring layer 13 and the transistors 15, an insulating protective layer 17 covering the upper surface of the wiring layer 11, an insulating protective layer 18 covering the lower surface of the wiring layer 12, through holes 19 and 21, and a thermal fuse 20 disposed within the wiring layer 11.

[0017] 1, the wiring layers 12 and 13, the insulating protective layer 17, and the insulating layer 14 are omitted. The transistor 15 is an example of a semiconductor element having a gate electrode. The semiconductor device 10 may also include a known heat dissipation member, although this is not shown. FIG. 2 shows a cross section taken along line A-A in FIG. 1.

[0018] 2, wiring layer 11, wiring layer 12, and wiring layer 13 are partially overlapped with each other. Wiring layer 11 is located above wiring layers 12 and 13, and wiring layers 12 and 13 are located below wiring layer 11. Wiring layer 12 is located below wiring layer 13. Wiring layers 11, 12, and 13 are made of a known conductive material, such as copper.

[0019] The wiring layer 11 includes wiring 11a, wiring 11b, and wiring 11c, which are arranged on the same plane, for example. Wiring 11a is electrically connected to a gate electrode 15d of the transistor 15. Wiring 11b is electrically connected to an emitter electrode 15b of the transistor 15. Wiring 11c is electrically connected to the emitter electrode 15b. As shown in FIG. 2, wirings 11a, 11b, and 11c may be electrically connected to electrodes 15d and 15b through vias, or may be connected by increasing the thickness of the wiring itself on each electrode in the vertical direction. The wiring layer 11 may also be referred to as a first wiring layer.

[0020] The wiring 11a electrically connects the gate electrode 15d to a gate driver (not shown). In this embodiment, the gate driver is provided outside the semiconductor device 10, but in the present disclosure, the gate driver may be provided inside the semiconductor device 10.

[0021] In this embodiment, a thermal fuse 20 is provided in the wiring 11a. For example, a thermal fuse 20 is provided for each transistor 15, and each thermal fuse 20 is electrically connected to the gate electrode 15d of the transistor 15. The thermal fuse 20 is also thermally connected to the gate electrode 15d of the transistor 15. The thermal fuse 20 is provided at a position that overlaps the gate electrode 15d of the transistor 15 vertically.

[0022] The thermal fuse 20 may be entirely or partially positioned so as to overlap at least a portion of the gate electrode 15d. The thermal fuse 20 may also be entirely or partially positioned so as to overlap at least a portion of the emitter electrode 15b or the collector electrode 15c. The thermal fuse 20 may also be entirely or partially positioned so as to overlap at least a portion of the transistor 15. The thermal fuse 20 may be provided as at least a portion of the via or through-hole 21, or as the via or through-hole itself. The thermal fuse 20 may also be positioned so as not to overlap the transistor 15.

[0023] The thermal fuse 20 according to this embodiment is conductive and is provided, for example, to constitute a part of the wiring 11a of the wiring layer 11. The thermal fuse 20 is thermally connected to the transistor 15. When the thermal fuse 20 melts, the wiring 11a is separated into two. That is, the thermal fuse 20 is disposed so as to connect the two components that constitute the wiring 11a. In this embodiment, heat transferred from the transistor 15 to the thermal fuse 20 is mainly transferred from the gate electrode 15d through the wiring 11a. However, the heat may be transferred not only through a conductive material but also through a known inorganic material with a relatively low thermal resistance.

[0024] The thermal fuse 20 may be, for example, a flat plate made of a known conductive fusible metal and mounted on the same plane as the wiring 11a. The thermal fuse 20 is thermally connected to the transistor 15, and is preferably mounted in close proximity to the transistor 15. This allows abnormal heat generated by the transistor 15 to be efficiently conducted to the thermal fuse 20. The thermal fuse 20 may also be made of fuse solder.

[0025] The thermal fuse 20 may be activated by, for example, thermal decomposition and contraction when heated, thereby cutting off the circuit. The heating temperature, i.e., the activation temperature, is equal to or higher than the temperature at which the transistor 15 normally generates heat. The activation temperature of the thermal fuse 20 may be any temperature at which the transistor 15 abnormally generates heat, and is preferably lower within the temperature range of the abnormal heat generation. It is preferable that the activation temperature be equal to or higher than a temperature that satisfies the safety of the semiconductor device 10 and the heat resistance to solder reflow.

[0026] The wiring 11b is used as a wiring for current output. The wiring 11b is electrically connected to, for example, a through-hole 19. The wiring 11c is connected to a terminal for voltage monitoring. Note that the wiring 11c does not necessarily have to be used.

[0027] The wiring layers 12 and 13 include wiring made of a conductive material such as a metal plate containing copper (Cu). The wiring layer 12 is electrically connected to the wiring layer 13 through a via or the like. The wiring layer 13 is electrically connected to a collector electrode 15c of the transistor 15 through a bonding layer 16. The bonding layer 16 is conductive and is used to bond the wiring layer 13 to the transistor 15. Note that when a gate driver is provided in the semiconductor device 10, it may be mounted on the wiring layer 13. The wiring layers 12 and 13 are an example of a retention layer, and the wiring layers 12 and 13 and the retention layer may be referred to as a second wiring layer.

[0028] The insulating layer 14 is, for example, a known resin material filled in the space between the wiring layers 11 and 12. The insulating layer 14 preferably has high thermal conductivity, and more specifically, for example, a resin such as an epoxy resin containing glass fiber is used.

[0029] The transistors 15 are, for example, metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs). In this embodiment, the two transistors 15 are IGBTs, but when either or both of the transistors 15 are MOSFETs, the emitter electrode 15 b, the collector electrode 15 c, and the gate electrode 15 d correspond to the source electrode, the drain electrode, and the gate electrode of the MOSFET, respectively.

[0030] The transistor 15 is, for example, a normally-off type. The transistor 15 is located between the wiring layer 11 and the wiring layer 12. In this embodiment, a plurality of transistors 15 may be used, and three or more transistors may be provided. The transistor 15 has a main body 15a. In each drawing, the specific structure of the main body 15a is omitted.

[0031] The transistor 15 is, for example, a power element. There is no particular limitation on the semiconductor material that constitutes the power element transistor 15. Examples of the semiconductor material include silicon, gallium nitride, silicon carbide, gallium oxide, and diamond.

[0032] 3 is an equivalent circuit diagram for explaining the positioning of the transistor 15 in the circuit built into the semiconductor device 10. In the configuration of the circuit 30 in FIG. 3, two transistors 15 are connected in series.

[0033] The circuit 30 is applied to, for example, a power conversion circuit including an inverter circuit, a converter circuit, etc. In this embodiment, the semiconductor device 10 includes the transistor 15 of the circuit 30 built therein.

[0034] The semiconductor device 10 is fabricated using a known method for manufacturing a component-embedded substrate. The thickness of the semiconductor device 10 in the vertical direction is, for example, 3 mm or less, and preferably 1 mm or less. The area of ​​the semiconductor device 10 as viewed from above is, for example, 2000 mm ２ Preferably, it is 1000 mm or less. ２ The following is the result.

[0035] (Operation and Effect of First Embodiment) According to the configuration of the first embodiment, even if an abnormality occurs in any of the transistors 15, the abnormal heat generation of the transistor 15 causes the thermal fuse 20 to melt. This disconnects the wiring 11a, cuts off the current to the gate electrode 15d, and turns off the transistor 15 with the abnormal heat generation. Therefore, even if an abnormal heat generation occurs in any of the transistors 15, the other transistors 15 continue to operate, allowing the operation of the semiconductor device 10 to continue. This makes it possible to improve the reliability of the semiconductor device 10 regardless of the reliability of the transistors 15.

[0036] Furthermore, if an abnormality occurs in any of the transistors 15 and there is a risk of an overcurrent occurring, the abnormal heat is transmitted to the thermal fuse 20, turning off the abnormal transistor 15. Furthermore, with this configuration, the transistor 15 can be turned off before an overcurrent occurs.

[0037] Furthermore, even if an abnormality occurs in one of the transistors 15, damage to other components constituting the circuit can be suppressed. Furthermore, even if the transistor 15 is a power element, the thermal fuse 20 is not located on a wiring through which a large current flows, so the risk of fire or the like can be prevented when, before, and after the fuse blows. Furthermore, the thermal fuse 20 can be made relatively small.

[0038] In the present disclosure, as will be described later, a plurality of semiconductor devices 10 may be combined to form a module unit.

[0039] Second Embodiment In this embodiment, an example of a module unit 100 will be described in which a plurality of semiconductor devices 110, each having one transistor 15, are used. For example, as shown in Figures 4 and 5, the semiconductor device 110 according to this embodiment includes wiring layers 111 and 112, an insulating layer 113 located between the wiring layers 111 and 112, a diode 114 and a transistor 15 embedded in the insulating layer 113, a substrate 116 supporting the wiring layer 112, an insulating protective layer 117 covering the upper surface of the wiring layer 111, an insulating protective layer 118 covering the lower surface of the wiring layer 112, through holes 119 and 121 extending downward from the wiring layer 111, and a thermal fuse 20 provided in the wiring layer 111.

[0040] The wiring layers 111 and 112, the insulating layer 113, the insulating protection layers 117 and 118, and the through holes 119 and 121 correspond to the wiring layers 11 and 12, the insulating layer 14, the insulating protection layers 17 and 18, and the through holes 19 and 21, respectively, of the first embodiment, and in this embodiment, some of the explanations that overlap with those of the first embodiment will be omitted.

[0041] 5, the wiring layer 111 and the wiring layer 112 partially overlap each other. The wiring layer 111 is located above the wiring layer 112, and the wiring layer 112 is located below the wiring layer 111. The wiring layers 111 and 112 are made of a known conductive material, such as copper.

[0042] The wiring layer 111 has a wiring 111a and a wiring 111b on the same plane, for example. The wiring 111a is electrically connected to the gate electrode 15d of the transistor 15. The wiring 111b is electrically connected to the emitter electrode 15b of the transistor 15 and the Schottky electrode 114b of the diode 114. The wirings 111a and 111b may be electrically connected to the electrodes 15d, 15b, and 114b through vias as shown in FIG. 5 , or may be connected by increasing the thickness of the wiring itself on each electrode in the vertical direction.

[0043] The wiring layer 112 is made of copper foil formed on both sides of the base material 116, and the upper wiring 112a and the lower wiring 112b are electrically connected via through holes. The wiring layer 112 is also electrically connected to the ohmic electrode 114c of the diode 114 and the collector electrode 15c of the transistor 15. For example, the diode 114 and the transistor 15 are each mounted on the wiring 112a via an adhesive layer (not shown).

[0044] The insulating layer 113 is, for example, a known resin material filled in the space between the wiring layers 111 and 112. The insulating layer 113 preferably has high thermal conductivity.

[0045] The diode 114 is, for example, a Schottky barrier diode (SBD), a fast recovery diode (FRD), or a PiN diode. The diode 114 and the transistor 15 are located between the wiring layer 111 and the wiring layer 112.

[0046] The diode 114 and the transistor 15 are, for example, power elements. The semiconductor material constituting the diode 114 as a power element is not particularly limited. Examples of the semiconductor material include silicon, gallium nitride, silicon carbide, gallium oxide, and diamond.

[0047] 6 is an equivalent circuit diagram for explaining the positioning of diode 114 and transistor 15 in the circuit built into semiconductor device 110. In the configuration of circuit 130 in Fig. 6, an anti-parallel circuit of transistor 15 and diode 114 and an anti-parallel circuit of transistor 15 and diode 114 are connected in series, and further, capacitor 31 is connected in parallel to these transistors 15.

[0048] The circuit 130 is applied to a power conversion circuit including, for example, an inverter circuit or a converter circuit. In this embodiment, the semiconductor device 110 incorporates the transistor 15 and the diode 114 in the circuit 130. In the present disclosure, the semiconductor device 110 may incorporate a plurality of transistors 15 and / or a plurality of diodes 114.

[0049] The plurality of transistors 15 may be electrically connected in series or in parallel. The configuration of the circuit 30 described above is merely an example, and other circuit configurations may be used. In the present disclosure, a power conversion circuit can be configured by combining a plurality of semiconductor devices 10, 110 together with other passive components.

[0050] (Effects of the Second Embodiment) According to the configuration of the second embodiment, even if an abnormality occurs in one of the transistors 15, the transistor 15 is turned off as in the first embodiment. Therefore, even if some of the semiconductor devices 110 lose their function, the other semiconductor devices 110 continue to operate, allowing the module unit 100 to continue operating. Furthermore, even if an abnormality occurs in one of the transistors 15, such as in a semiconductor device 110 where the transistor 15 is normal, damage to other components constituting the circuit can be suppressed.

[0051] (Modifications) In the above embodiment, the thermal fuse 20 is provided on the same plane as the wiring layers 11, 111, but it may protrude upward from the wiring 11a, 111a or may be exposed on the surface of the insulating protective layer 17, 117. For example, as shown in FIG. 7 , the upper surface of the thermal fuse 20 may be exposed upward and form part of the upper surface of the semiconductor device 10. In this case, the upper part of the thermal fuse 20 located on the same plane as the insulating protective layer 17 may be wider in top view than the lower part of the thermal fuse 20 located on the same plane as the wiring 11a. For example, the upper part of the thermal fuse 20 may be longer than the lower part of the thermal fuse 20 in the direction in which the wiring 11a extends.

[0052] 1 and 5, the thermal fuse 20 is shown to have the same thickness (dimension in the vertical direction) as the wiring layers 11, 111, but the thermal fuse 20 may be provided thinner or thicker than the wiring layers 11, 111. The thermal fuse 20 may also be joined to the gate electrode 15d.

[0053] The length (width) of the thermal fuse 20 in a direction perpendicular to the direction in which the wirings 11 a and 111 a extend on the same plane may be shorter than the width of the wirings 11 a and 111 a. The thermal fuse 20 may be provided closer to the transistor 15 to which it is electrically connected, for example, compared to other heat-generating elements including the transistor 15.

[0054] A plurality of thermal fuses 20 may be provided for one transistor 15. Also, one thermal fuse 20 may be provided for a plurality of transistors 15. The number of thermal fuses 20 may be the same as the number of transistors 15 as in the above embodiment, or may be different.

[0055] The semiconductor device and module unit according to the present disclosure may be collectively referred to as an electronic device.

[0056] The semiconductor device or module unit according to the present disclosure may also have a configuration in which there is only one transistor 15. In this case, there may be only one thermal fuse 20. The transistor 15 may be of a normally-on type. In this case, a circuit including at least one transistor 15 and the thermal fuse 20 may be normally-off, and the thermal fuse 20 may interrupt the current path to turn off the circuit.

[0057] In the above embodiment, the vertical transistor 15 and diode 114 are used, but they may be horizontal. In this case, instead of the wiring layers 12, 13, and 112, a heat dissipation member made of metal or the like may be used as a holding layer.

[0058] The semiconductor device 10 or module unit 100 according to the embodiment of the present disclosure described above can be applied to power conversion devices such as inverters and converters in order to achieve the above-described functions. Fig. 8 is a block diagram showing an example of a control system using the semiconductor device 10 or 100 according to the embodiment of the present disclosure, and Fig. 9 is a circuit diagram of the same control system, which is particularly suitable for installation in an electric vehicle.

[0059] As shown in Fig. 8, the control system 500 includes a battery (power source) 501, a boost converter 502, a buck converter 503, an inverter 504, a motor (drive target) 505, and a drive control unit 506, all of which are mounted on an electric vehicle. The battery 501 is a storage battery such as a nickel-metal hydride battery or a lithium-ion battery, and stores power by charging at a power supply station or by regenerating energy during deceleration, and can output a DC voltage required for operation of the electric vehicle's traction system and electrical equipment systems. The boost converter 502 is a voltage conversion device equipped with, for example, a chopper circuit, and can boost a DC voltage of, for example, 200 V supplied from the battery 501 to, for example, 650 V through the switching operation of the chopper circuit, and output the boosted voltage to the traction system, such as the motor. The step-down converter 503 is also a voltage conversion device equipped with a chopper circuit, but by stepping down the DC voltage of, for example, 200 V supplied from the battery 501 to, for example, about 12 V, it can output the voltage to the electrical system, including the power windows, power steering, and on-board electrical equipment.

[0060] Inverter 504 converts the DC voltage supplied from boost converter 502 into a three-phase AC voltage by switching operation and outputs it to motor 505. Motor 505 is a three-phase AC motor that constitutes the driving system of the electric vehicle, and is rotationally driven by the three-phase AC voltage output from inverter 504, and transmits the rotational driving force to the wheels of the electric vehicle via a transmission or the like (not shown).

[0061] Meanwhile, various sensors (not shown) measure actual values ​​such as wheel rotation speed, torque, and accelerator pedal depression (acceleration amount) from the electric vehicle while it is running, and these measurement signals are input to the drive control unit 506. At the same time, the output voltage value of the inverter 504 is also input to the drive control unit 506. The drive control unit 506 functions as a controller, equipped with a calculation unit such as a CPU (Central Processing Unit) and a data storage unit such as a memory. It generates a control signal using the input measurement signal and outputs it as a feedback signal to the inverter 504, thereby controlling the switching operation of the switching elements. This instantly corrects the AC voltage provided by the inverter 504 to the motor 505, enabling accurate operation control of the electric vehicle and ensuring safe and comfortable operation of the electric vehicle. The output voltage to the inverter 504 can also be controlled by providing a feedback signal from the drive control unit 506 to the boost converter 502.

[0062] 9 shows the circuit configuration of FIG. 8 excluding the step-down converter 503, i.e., the circuit configuration showing only the configuration for driving the motor 505. As shown in the figure, for example, a Schottky barrier diode is used, and in the step-up converter 502 it is incorporated into a chopper circuit to perform chopper control, and in the inverter 504 it is incorporated into a switching circuit including an IGBT to perform switching control. Note that an inductor (such as a coil) is inserted in the output of the battery 501 to stabilize the current, and capacitors (such as an electrolytic capacitor) are inserted between the battery 501, the step-up converter 502, and the inverter 504 to stabilize the voltage.

[0063] 9, the drive control unit 506 includes a calculation unit 507 consisting of a CPU (Central Processing Unit) and a storage unit 508 consisting of a non-volatile memory. Signals input to the drive control unit 506 are provided to the calculation unit 507, which performs programmed calculations as necessary to generate feedback signals for each semiconductor element. The storage unit 508 also temporarily stores the results of calculations performed by the calculation unit 507, accumulates physical constants and functions necessary for drive control in the form of a table, and outputs the results to the calculation unit 507 as appropriate. The calculation unit 507 and storage unit 508 can be configured as known units, and their processing capabilities can be selected as desired.

[0064] As shown in Figures 8 and 9, in the control system 500, diodes and switching elements such as thyristors, power transistors, IGBTs, and MOSFETs are used for the switching operations of a boost converter 502, a buck converter 503, and an inverter 504. These semiconductor elements are made of gallium oxide (Ga ２ O ３ ), especially corundum-type gallium oxide (α-Ga ２ O ３ ) as the material, the switching characteristics are significantly improved. Furthermore, by applying the semiconductor device according to the embodiment of the present disclosure, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 500 can be realized. That is, the effects of the present disclosure can be expected for each of the boost converter 502, the buck converter 503, and the inverter 504, and the effects of the present disclosure can be expected for any one of these, any combination of two or more of these, or any form including the drive control unit 506.

[0065] The control system 500 described above can be applied to control systems for electric vehicles using the semiconductor device 10 and the module unit 100 according to the embodiment of the present disclosure, as well as control systems for all kinds of purposes, such as converting DC to AC power, such as stepping up or stepping down power from a DC power source. Also, a power source such as a solar cell can be used as the battery.

[0066] FIG. 10 is a block diagram showing another example of a control system employing the semiconductor device 10 or module unit 100 according to an embodiment of the present invention, and FIG. 11 is a circuit diagram of the same control system, which is suitable for installation in infrastructure equipment, home appliances, and the like that operate on power from an AC power source.

[0067] As shown in FIG. 10 , the control system 600 receives power from an external, e.g., three-phase AC power source (power source) 601. The control system 600 includes an AC / DC converter 602, an inverter 604, a motor (drive pair) 605, and a drive control unit 606, which can be mounted on various devices (described later). The three-phase AC power source 601 is, for example, a power generation facility (such as a thermal power plant, a hydroelectric power plant, a geothermal power plant, or a nuclear power plant) operated by an electric power company. The output of the three-phase AC power source 601 is stepped down via a substation and supplied as AC voltage. Alternatively, the power may be supplied via a power cable from a private generator or other device installed within a building or a nearby facility. The AC / DC converter 602 is a voltage conversion device that converts AC voltage to DC voltage. The AC voltage of 100 V or 200 V supplied from the three-phase AC power source 601 is converted to a predetermined DC voltage. Specifically, the voltage conversion converts the DC voltage to a commonly used desired voltage, such as 3.3 V, 5 V, or 12 V. If the drive target is a motor, the voltage is converted to 12 V. It is also possible to use a single-phase AC power supply instead of a three-phase AC power supply, and in that case, a similar system configuration can be achieved by using an AC / DC converter with a single-phase input.

[0068] Inverter 604 converts the DC voltage supplied from AC / DC converter 602 into a three-phase AC voltage by switching operation and outputs it to motor 605. Motor 605 has a different form depending on the controlled object, but is a three-phase AC motor for driving wheels if the controlled object is a train, pumps and various power sources if the controlled object is factory equipment, or compressors etc. if the controlled object is a home appliance, and is rotationally driven by the three-phase AC voltage output from inverter 604, and transmits the rotational driving force to a driven object (not shown).

[0069] It should be noted that, for example, among home appliances, there are many devices to be driven that can be supplied with the DC voltage output from AC / DC converter 602 as is (for example, personal computers, LED lighting equipment, video equipment, audio equipment, etc.), in which case inverter 604 is not required in control system 600, and the DC voltage is supplied to the device to be driven from AC / DC converter 602, as shown in Fig. 20. In this case, for example, a personal computer or the like is supplied with a DC voltage of 3.3 V, and an LED lighting equipment or the like is supplied with a DC voltage of 5 V.

[0070] Meanwhile, various sensors (not shown) are used to measure actual values ​​such as the rotation speed and torque of the driven object, or the temperature and flow rate of the environment surrounding the driven object, and these measurement signals are input to the drive control unit 606. At the same time, the output voltage value of the inverter 604 is also input to the drive control unit 606. Based on these measurement signals, the drive control unit 606 provides a feedback signal to the inverter 604 to control the switching operation of the switching elements. This allows the AC voltage provided by the inverter 604 to be instantly corrected, thereby enabling accurate operation control of the driven object and achieving stable operation of the driven object. Furthermore, as described above, if the driven object can be driven by a DC voltage, it is also possible to feedback control the AC / DC converter 602 instead of feedback to the inverter.

[0071] FIG. 11 shows the circuit configuration of FIG. 10 . As shown in the figure, the semiconductor device 10 or the module unit 100 according to the embodiment of the present disclosure may be employed in an AC / DC converter 602 and an inverter 604 to provide switching control. The AC / DC converter 602 uses, for example, a bridge-shaped circuit configuration of Schottky barrier diodes, and performs DC conversion by converting and rectifying the negative voltage component of the input voltage into a positive voltage. In addition, the inverter 604 is incorporated into a switching circuit of an IGBT to perform switching control. Note that voltage stabilization is achieved by interposing a capacitor (such as an electrolytic capacitor) between the AC / DC converter 602 and the inverter 604.

[0072] 11, the drive control unit 606 includes a calculation unit 607 consisting of a CPU and a storage unit 608 consisting of a non-volatile memory. Signals input to the drive control unit 606 are provided to the calculation unit 607, which performs programmed calculations as necessary to generate feedback signals for each semiconductor element. The storage unit 608 also temporarily stores the results of calculations performed by the calculation unit 607, accumulates physical constants and functions necessary for drive control in the form of a table, and outputs the results to the calculation unit 607 as appropriate. The calculation unit 607 and storage unit 608 can be configured as known units, and their processing capabilities can be selected as desired.

[0073] In this control system 600, as in the control system 500 shown in Fig. 8 and Fig. 9, diodes and switching elements such as thyristors, power transistors, IGBTs, and MOSFETs are used for the rectification and switching operations of the AC / DC converter 602 and inverter 604. These semiconductor elements are made of gallium oxide (Ga ２ O ３ ), especially corundum-type gallium oxide (α-Ga ２ O ３ ) as the material, the switching characteristics are improved. Furthermore, by applying the semiconductor device according to the embodiment of the present disclosure, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 600 can be realized. That is, the effects of the present disclosure can be expected for each of the AC / DC converter 602 and the inverter 604, and the effects of the present disclosure can be expected for any one of them, a combination of them, or a form including the drive control unit 606.

[0074] 10 and 11 show a motor 605 as an example of a driven object, but the driven object is not necessarily limited to a mechanically operated object, and can be many devices that require AC voltage. The control system 600 can be applied as long as it inputs power from an AC power source to drive the driven object, and can be installed for drive control of devices such as infrastructure equipment (for example, power equipment in buildings and factories, communication equipment, traffic control equipment, water and sewage treatment equipment, system equipment, labor-saving equipment, trains, etc.) and home appliances (for example, refrigerators, washing machines, personal computers, LED lighting equipment, video equipment, audio equipment, etc.).

[0075] The following additional notes will be given regarding the above-described embodiment.

[0076] (Appendix 1) A semiconductor device or module unit comprising: a wiring layer; a retention layer; a plurality of semiconductor elements positioned between the wiring layer and the retention layer and having gate electrodes; and a plurality of thermal fuses electrically connected to the plurality of semiconductor elements, wherein the plurality of thermal fuses are electrically connected to the gate electrodes.

[0077] (Supplementary Note 2) The semiconductor device or module unit according to Supplementary Note 1, wherein the thermal fuse is mounted in proximity to the semiconductor element.

[0078] (Supplementary Note 3) The semiconductor device or module unit according to Supplementary Note 1 or 2, wherein at least a portion of the thermal fuse is provided in a position that overlaps vertically with an electrode of the semiconductor element.

[0079] (Supplementary Note 4) The semiconductor device or module unit according to any one of Supplementary Note 1 to 3, wherein at least a part of the thermal fuse is provided in a position that overlaps the gate electrode vertically.

[0080] (Supplementary Note 5) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 4, wherein the thermal fuse is joined to the gate electrode.

[0081] (Supplementary Note 6) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 5, wherein the wiring layer has a wiring electrically connected to the gate electrode, and the thermal fuse is disposed in the wiring.

[0082] (Supplementary Note 7) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 6, wherein at least two of the plurality of semiconductor elements are each electrically connected to at least one of the thermal fuses.

[0083] (Supplementary Note 8) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 7, wherein the retention layer includes wiring.

[0084] (Supplementary Note 9) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 8, wherein the semiconductor element is a power element.

[0085] (Supplementary Note 10) The semiconductor device or module unit according to any one of Supplementary Notes 1 to 9, wherein the semiconductor element is a vertical element.

[0086] (Supplementary Note 11) An electrode conversion device using the semiconductor device or module unit according to any one of Supplementary Notes 1 to 10.

[0087] (Supplementary Note 12) A control system using the semiconductor device or module unit according to any one of Supplementary Notes 1 to 11.

[0088] 10 Semiconductor device 11, 12, 13 Wiring layer 11a, 11b, 11c Wiring 14 Insulating layer 15 Transistor 15a Body 15b Emitter electrode 15c Collector electrode 15d Gate electrode 16 Bonding layer 17, 18 Insulating protection layer 19, 21 Through hole 20 Thermal fuse 30 Circuit 100 Module unit 110 Semiconductor device 111, 112 Wiring layer 111a, 111b Wiring 112a, 112b Wiring 113 Insulating layer 114 Diode 114a Body 114b Schottky electrode 114c Ohmic electrode 116 Substrate 117, 118 Insulating protection layer 119, 121 Through hole 130 Circuit 131 Capacitor 500 Control system 501 Battery 502 Step-up converter 503 Step-down converter 504 Inverter 505 Motor 506 Drive control unit 507 Calculation unit 508 Storage unit 600 Control system 601 Three-phase AC power supply 602 AC / DC converter 604 Inverter 605 Motor 606 Drive control unit 607 Calculation unit 608 Storage unit

Claims

1. A semiconductor device or module unit comprising: a wiring layer; a retention layer; a plurality of semiconductor elements located between the wiring layer and the retention layer and having gate electrodes; and a plurality of thermal fuses electrically connected to the plurality of semiconductor elements, wherein the plurality of thermal fuses are electrically connected to the gate electrodes.

2. The semiconductor device or module unit according to claim 1, wherein the thermal fuse is mounted adjacent to the semiconductor element.

3. The semiconductor device or module unit according to claim 1 or 2, wherein at least a portion of the thermal fuse is provided in a position that overlaps vertically with an electrode of the semiconductor element.

4. The semiconductor device or module unit according to claim 3, wherein at least a portion of the thermal fuse is provided in a position vertically overlapping with the gate electrode.

5. The semiconductor device or module unit according to claim 4, wherein the thermal fuse is joined to the gate electrode.

6. The semiconductor device or module unit according to claim 1 or 2, wherein the wiring layer has a wiring electrically connected to the gate electrode, and the thermal fuse is disposed in the wiring.

7. The semiconductor device or module unit according to claim 1 or 2, wherein at least two of said plurality of semiconductor elements are each electrically connected to at least one of said thermal fuses.

8. The semiconductor device or module unit according to claim 1 or 2, wherein the retention layer includes wiring.

9. The semiconductor device or module unit according to claim 1 or 2, wherein the semiconductor element is a power element.

10. The semiconductor device or module unit according to claim 1 or 2, wherein the semiconductor element is a vertical element.

11. An electrode conversion device using the semiconductor device or module unit according to claim 1 or 2.

12. A control system using the semiconductor device or module unit according to claim 1 or 2.

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