Magnetron sputtering-based adjustment method, sputtering cathode device, and sputtering device

Abstract

A magnetron sputtering-based adjustment method, a sputtering cathode device, and a sputtering device. A linear area of an etching track (200) on the surface of each target (1) is divided into a first side track (210) and a second side track (220) which are arranged opposite to each other. The method comprises: acquiring the film thickness distribution condition of a coated substrate subjected to film coating by a corresponding target (1); on the basis of the film thickness distribution condition of the coated substrate, determining which one of the first side track (210) and the second side track (220) is a plasma enhanced side track, and determining which one of the first side track (210) and the second side track (220) is a non-plasma enhanced side track; and integrally weakening the strength of the magnetic field of the plasma enhanced side track.

Description

Magnetron sputtering adjustment method, sputtering cathode device and sputtering equipment

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on September 5, 2023, with application number 202311133407.7, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of vacuum sputtering coating, for example, to a magnetron sputtering adjustment method, a sputtering cathode device and a sputtering device. Background Art

[0003] Vacuum magnetron sputtering coating is a common coating method. Vacuum magnetron sputtering coating refers to a coating technology that uses the coating material as the target cathode, bombards the target material with argon ions, generates cathode sputtering, and sputters the target material atoms onto the coating substrate to form a deposited layer.

[0004] In the related art, the cathode device for magnetron sputtering coating usually includes a target material and a magnetron assembly. The magnetron assembly is arranged inside the target material. When the target material rotates in a vacuum chamber, it is sputtered under the combined action of the magnetic field and electric field inside it to achieve coating of the coated substrate. Since the target material is often etched unevenly during the etching process, the utilization rate of the target material is greatly reduced. Some related means generally add an anode assembly at a suitable position in the vacuum chamber to optimize the distribution of the electric field and magnetic field on the surface of the target material so that the target material is evenly etched. However, the adjustment of the anode assembly is not flexible and cannot be well adapted to different cathode layouts. In addition, a certain thickness of film layer will also be deposited on the surface of the anode assembly, resulting in a waste of target material and increasing costs. In addition, after the film layer on the surface of the anode assembly accumulates too much, there is a high probability of peeling off. If it falls on the coated substrate, it is easy to damage the coated substrate and reduce the product yield.

[0005] Summary of the Invention

[0006] The present application provides a magnetron sputtering adjustment method, a sputtering cathode device and a sputtering device, so that the target material is uniformly etched, the utilization rate of the target material can be improved, and there is no need to add an additional anode component, thereby reducing costs and improving product yield.

[0007] The present application provides a method for adjusting magnetron sputtering, comprising:

[0008] Obtaining the film thickness distribution of the coating substrate on which the target material is coated;

[0009] According to the film thickness distribution of the coated substrate, determining which of the first side runway and the second side runway is the plasma enhanced side runway and which is the plasma non-enhanced side runway; wherein the first side runway and the second side runway are respectively two side runways arranged opposite to each other and obtained by dividing the linear area of ​​the etching runway on the surface of the target material;

[0010] The magnetic field strength of the plasma-enhanced side runway is weakened as a whole.

[0011] In some embodiments, after the magnetic field strength of the plasma-enhanced side runway is weakened as a whole, the method further comprises:

[0012] Weakening the magnetic field strength of the first side runway and the second side runway, and the weakening amount of the magnetic field strength gradually decreases along the direction of the drift current on the etched runway; or,

[0013] The magnetic field strength of the first side track and the second side track is enhanced, and the enhancement amount of the magnetic field strength gradually decreases along the opposite direction of the drift current on the etched track.

[0014] In some embodiments, after weakening the magnetic field strength of the first side runway and the second side runway, or strengthening the magnetic field strength of the first side runway and the second side runway, the method further includes:

[0015] After the coating process is completed, obtaining morphology information of the target material in the vacuum chamber;

[0016] In response to the target material's morphology information meeting the preset requirements, the adjustment of the magnetic field strength is stopped; or, in response to the target material's morphology information not meeting the preset requirements, the step of reducing the overall magnetic field strength of the plasma enhanced side runway is returned to.

[0017] In some embodiments, obtaining the morphology information of the target material in the vacuum chamber includes:

[0018] The radial dimensions of a plurality of collection points arranged along the axial direction on the target are obtained.

[0019] In some embodiments, when a plurality of the target materials are spaced apart in a vacuum chamber, the plasma-enhanced side runway and the plasma-non-enhanced side runway on each of the target materials are determined in turn, and the magnetic field strength of the plasma-enhanced side runway on each of the target materials is weakened as a whole in turn.

[0020] The present application further provides a sputtering cathode device, which uses the above-mentioned magnetron sputtering adjustment method to adjust the magnetic field strength at each position of the etching track on the surface of the target material, and the sputtering cathode device includes:

[0021] A target material is rotatably disposed in a vacuum chamber;

[0022] A magnetron assembly is disposed inside the target material; and

[0023] An adjustment component is configured to adjust the magnetic field strength at each position of the etching track on the surface of the target material according to the film thickness distribution of the coated substrate.

[0024] In some embodiments, the magnetron assembly includes a first magnetic yoke, a first magnet array, a second magnetic yoke, and a second magnet array, the first magnetic yoke and the second magnetic yoke are both disposed in the target material, the first magnet array is disposed on the first magnetic yoke, the second magnet array is disposed on the second magnetic yoke, the first magnet array and the second magnet array are arranged adjacent to each other, and the first magnet array and the second magnet array both extend along the axial direction of the target material;

[0025] The adjustment assembly includes a first adjustment member and a second adjustment member, the first adjustment member is configured to adjust the distance between each position in the extension direction of the first magnet array and the target material, and the second adjustment member is configured to adjust the distance between each position in the extension direction of the second magnet array and the target material.

[0026] In some embodiments, the first adjusting member includes a plurality of first adjusting components arranged at intervals along the axial direction of the target material, the output end of the first adjusting component is connected to the first magnetic yoke, and the output end of the first adjusting component is configured to be able to move back and forth along the radial direction of the target material to drive the first magnetic yoke connected to the output end of the first adjusting component to approach or move away from the target material; the second adjusting member includes a plurality of second adjusting components arranged at intervals along the axial direction of the target material, the output end of the second adjusting component is connected to the second magnetic yoke, and the output end of the second adjusting component is configured to be able to move back and forth along the radial direction of the target material to drive the second magnetic yoke connected to the output end of the second adjusting component to approach or move away from the target material.

[0027] In some embodiments, the magnetron assembly further includes a cooling tube, the first magnetic yoke and the second magnetic yoke are both located on one side of the cooling tube, and the first adjustment component is a first adjustment bolt, which is threadedly connected to the cooling tube. The first adjustment bolt is screwed through the cooling tube to connect to the first magnetic yoke;

[0028] The second adjusting component is a second adjusting bolt, which is threadedly connected to the cooling pipe. The second adjusting bolt is screwed through the cooling pipe and connected to the second magnetic yoke.

[0029] The present application also provides a sputtering device, comprising a vacuum chamber, a coated substrate, and the sputtering cathode device as described above, wherein the coated substrate and the sputtering cathode device are both arranged in the vacuum chamber, and the magnetic lines of force generated by the magnetron assembly promote the deposition of atoms sputtered from the target material onto the coated substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] FIG1 is a schematic structural diagram of an etching track formed on a target surface provided in Example 1 of the present application;

[0031] FIG2 is a fitting diagram of the etching rate in the axial direction of the target surface provided in Example 1 of the present application;

[0032] FIG3 is a second fitting diagram of the etching rate in the axial direction of the target surface provided in Example 1 of the present application;

[0033] FIG4 is a flow chart of a method for adjusting magnetron sputtering provided in Example 1 of the present application;

[0034] FIG5 is a fitting diagram of the film thickness distribution of the coated substrate after coating provided in Example 1 of the present application;

[0035] FIG6 is a second fitting diagram of the film thickness distribution of the coated substrate after coating provided in Example 1 of the present application;

[0036] FIG7 is a schematic structural diagram of the sputtering cathode device provided in Example 2 of the present application after the target material is removed;

[0037] FIG8 is a cross-sectional view of the structure of the sputtering cathode device provided in the second embodiment of the present application after the target material is removed.

[0038] In the picture:

[0039] 200, etched runway; 210, first side runway; 220, second side runway;

[0040] 1. Target material;

[0041] 2. Magnetron assembly; 21. First magnetic yoke; 22. First magnet array; 23. Second magnetic yoke; 24. Second magnet array; 25. Cooling pipe;

[0042] 3. Adjustment assembly; 31. First adjustment member; 311. First adjustment component; 32. Second adjustment member; 321. Second adjustment component. DETAILED DESCRIPTION

[0043] In the description of this application, unless otherwise specified or limited, the terms "connected," "connect," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and can refer to internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0044] In this application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0045] In the description of this embodiment, terms such as "upper," "lower," "left," and "right" are used to refer to positions or locations based on those shown in the accompanying drawings. These terms are intended solely to facilitate description and simplify operation, and are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meaning.

[0046] Example 1

[0047] In the actual application of vacuum magnetron sputtering coating, for example, in a single-target application scenario, the target material is easily affected by the enhancement effect of the vacuum chamber (grounded anode), resulting in uneven target etching. In a dual-target application scenario, the target material is easily affected by the enhancement effect of the adjacent target material and the magnetic field enhancement effect of the vacuum chamber, resulting in uneven target etching.

[0048] As shown in FIG1 , during the vacuum magnetron sputtering coating process, when the target 1 rotates in the vacuum chamber, an etched track 200 is formed on the surface of the target 1 under the combined action of the magnetic field and electric field therein. The etched track 200 extends axially along the target 1 (i.e., from the end side of the target 1 to the support side of the target 1). The linear region of the etched track 200 can be divided into a first side track 210 and a second side track 220 that are arranged opposite to each other. Furthermore, a drift current circulates along the etched track 200. On the etched track 200, the drift current is set to flow from the end side of the target 1 to the support side of the target 1, which is the first side track 210, and the drift current is set to flow from the support side of the target 1 to the end side of the target 1, which is the second side track 220. It should be noted that, the greater the plasma density in the region of the etching track 200 , the faster the etching speed of the corresponding region of the target material 1 .

[0049] As shown in Figure 2, after experimental verification and analysis, there is an uneven phenomenon of gradually weakening plasma density along the direction of drift current on the etching runway 200. In addition, if one side of the etching runway 200 (Figure 2 takes the second side runway 220 as an example) is affected by the strong enhancement effect of the adjacent target material 1 or the outer anode, the plasma density on the runway will be enhanced, and due to the existence of the drift current phenomenon, the plasma in the enhanced area will also be preferentially pulled to the area with stronger plasma density, which will cause the unevenness in the drift current direction to be strengthened. Even if the runway on the other side (i.e., the first side runway 210 shown in Figure 2) is also affected by the enhancement effect of the adjacent target material 1 or the outer anode, its enhancement effect is relatively weak compared with the strong enhancement effect. The etching of the rotating target material 1 is the sum of the etching amounts of the first side runway 210 and the second side runway 220. After the etching results on both sides are superimposed, the etching at both ends of the target material 1 in the axial direction is uneven. As shown in Figure 2, under ideal conditions without enhancement, the sum of the superposition of the first side runway 210 and the second side runway 220 is relatively uniform along the axial direction of the target material. Under the influence of the actual enhancement effect, the target material 1 often undergoes uneven etching during the etching process, which greatly reduces the utilization rate of the target material 1. In addition, if the first side runway 210 is affected by the stronger enhancement effect of the adjacent target material 1 or the outer anode, it is as shown in Figure 3. As shown in Figure 4, this embodiment provides a method for adjusting magnetron sputtering, which divides the linear area of ​​the etching runway 200 on the surface of the target material 1 into a first side runway 210 and a second side runway 220 that are relatively arranged. The adjustment method for magnetron sputtering includes:

[0050] S1: Obtaining the film thickness distribution of the coating substrate coated with target material 1;

[0051] S2: According to the film thickness distribution of the coated substrate, determining which of the first side runway 210 and the second side runway 220 is the plasma enhanced side runway and which is the plasma non-enhanced side runway;

[0052] S3: Weaken the overall magnetic field strength of the plasma-enhanced side runway.

[0053] Here, the fact that one side of the runway is a plasma non-enhanced side runway does not mean that this side of the runway has no plasma enhancement. In the vacuum chamber, this plasma non-enhanced side of the runway is also affected by the enhancement effect of the vacuum chamber (grounded anode) and / or the adjacent target material. However, compared with the side of the runway with a high plasma enhancement intensity, its plasma enhancement intensity is relatively weak, and thus the effect of this side of the runway on the target material etching uniformity is also relatively weak.

[0054] The adjustment method for magnetron sputtering provided in this embodiment weakens the overall magnetic field strength of the plasma-enhanced side runway, thereby reducing the influence of the enhancement effect on the plasma density on the first side runway 210 or the second side runway 220, so that the target material 1 is uniformly etched, thereby improving the utilization rate of the target material 1. In addition, this method does not require the addition of an additional anode assembly, thereby reducing costs and improving product yield.

[0055] The greater the plasma density in a certain area on the etching track 200 on the target material 1, the faster the etching speed of the target material 1 in the corresponding area. Correspondingly, the film layer of the coated substrate in the area of ​​the target material 1 with a fast etching speed is relatively thicker, resulting in an uneven film layer of the coated substrate. Therefore, by obtaining the film thickness distribution of the coated substrate and the known flow direction of the drift current, it can be determined which of the first side track 210 and the second side track 220 is the plasma enhanced side track and which is the plasma non-enhanced side track. In addition, adjusting the magnetic field strength on the etching track 200 by the film thickness distribution of the coated substrate is more accurate and can also achieve earlier and faster adjustment of the magnetic field strength without waiting for the etching morphology of the target material 1 to be formed before adjustment, which is more proactive.

[0056] Optionally, in this embodiment, due to the phenomenon of uneven distribution of plasma in the drift current direction, even without the enhancement effect, there is a certain degree of unevenness in that the etching amount on both sides of the target is greater than that in the middle. The magnetron sputtering adjustment method further includes, after step S3:

[0057] S4: Weaken the magnetic field strength of the first side runway 210 and the second side runway 220, and the amount of weakening of the magnetic field strength gradually decreases along the direction of the drift current on the etched runway 200; or, strengthen the magnetic field strength of the first side runway 210 and the second side runway 220, and the amount of strengthening of the magnetic field strength gradually decreases along the opposite direction of the drift current on the etched runway 200.

[0058] The above adjustment method ensures the uniformity of plasma density at each position on the etching track 200 and ensures that the target material 1 is uniformly etched.

[0059] Optionally, in this embodiment, as shown in FIG4 , the magnetron sputtering adjustment method further includes, after step S4:

[0060] After the coating process is completed, the morphology information of the target material 1 in the vacuum chamber is obtained;

[0061] When the morphology information of the target material 1 meets the preset requirements, the adjustment of the magnetic field strength is stopped;

[0062] When the morphology information of the target material 1 does not meet the preset requirements, steps S3 to S4 are repeated.

[0063] The above design ensures that the intensity of the magnetic field at each position on the etching track 200 is gradually revised and adjusted according to the morphology of the target material 1 being etched, until the target material 1 is uniformly etched.

[0064] In other embodiments, when the morphology information of the target material 1 does not meet the preset requirements, only step S3 may be repeated.

[0065] In some embodiments, obtaining the morphology information of the target material 1 in the vacuum chamber includes:

[0066] The radial dimensions of a plurality of collection points arranged along the axial direction on the target material 1 are obtained, that is, the diameter of the target material 1 at each collection point is obtained.

[0067] For example, for a single-target vacuum chamber, as shown in FIG5 , when the film thickness distribution of the coated substrate is as shown in FIG5 , that is, the film layer at the position of the coated substrate opposite the end side of the target 1 is thicker, it indicates that the etching rate on the end side of the target 1 is faster. It can be seen that the distribution trend of the film thickness of the coated substrate is consistent with the flow direction of the drift current of the first side runway 210. It can be inferred that the first side runway 210 is the plasma-enhanced side runway, and the second side runway 220 is the plasma-non-enhanced side runway. When the film thickness distribution of the coated substrate is as shown in FIG6 , that is, the film layer at the position of the coated substrate opposite the support side of the target 1 is thicker, it indicates that the etching rate on the support side of the target 1 is faster. It can be seen that the distribution trend of the film thickness of the coated substrate is consistent with the drift current distribution of the second side runway 220. It can be inferred that the second side runway 220 is the plasma-enhanced side runway, and the first side runway 210 is the plasma-non-enhanced side runway.

[0068] When multiple targets 1 are spaced apart within the vacuum chamber, the plasma-enhanced side runway and the plasma-non-enhanced side runway on each target 1 are sequentially determined, and the magnetic field strength of the etching runway 200 on the surface of each target 1 is adjusted in step S3 or steps S3-S4. For example, when analyzing the plasma-enhanced side runway and the plasma-non-enhanced side runway on one target 1, the power of the remaining targets 1 can be reduced to 1 / 10 or less of the power of the target 1 to be analyzed, so that the film thickness distribution of the coated substrate is mainly caused by sputtering of the target 1 to be analyzed, thereby more accurately obtaining the plasma-enhanced side runway and the plasma-non-enhanced side runway on the target 1. When one of the target materials 1 is analyzed, the power of the remaining target materials 1 is only 1 / 10 or less of that of the target material 1 to be analyzed. The film thickness contributed by the remaining target materials 1 has little effect on the film thickness distribution of the target material 1 to be analyzed, but can produce a plasma enhancement effect on the target material 1 to be analyzed. Therefore, this method can actually analyze the actual etching distribution of the target material 1 to be analyzed.

[0069] Example 2

[0070] As shown in FIG7 , this embodiment further provides a sputtering cathode device that utilizes the aforementioned magnetron sputtering adjustment method to adjust the magnetic field strength at various locations on the etching track 200 on the surface of the target 1. The sputtering cathode device provided in this embodiment includes a target 1, a magnetron assembly 2, and an adjustment assembly 3. The target 1 is rotatably disposed within a vacuum chamber, the magnetron assembly 2 is disposed within the target 1, and the adjustment assembly 3 is configured to adjust the magnetic field strength at various locations on the etching track 200 on the surface of the target 1 based on the film thickness distribution of the coated substrate. In some embodiments, the adjustment assembly 3 is disposed within the target 1, and an end of the adjustment assembly 3 is connected to the magnetron assembly 2. The sputtering cathode device provided in this embodiment, by utilizing the aforementioned magnetron sputtering adjustment method, enables uniform etching of the target 1, improves the utilization rate of the target 1, and eliminates the need for an additional anode assembly, thereby reducing costs and improving product yield.

[0071] As shown in Figures 7 and 8, the magnetron assembly 2 includes a first magnetic yoke 21, a first magnet array 22, a second magnetic yoke 23 and a second magnet array 24. The first magnetic yoke 21 and the second magnetic yoke 23 are both arranged in the target material 1, the first magnet array 22 is arranged on the first magnetic yoke 21, and the second magnet array 24 is arranged on the second magnetic yoke 23. The first magnet array 22 and the second magnet array 24 are arranged adjacent to each other. The adjustment assembly 3 includes a first adjustment member 31 and a second adjustment member 32. The first adjustment member 31 is configured to adjust the distance between each position in the extension direction of the first magnet array 22 and the target material 1, and the second adjustment member 32 is configured to adjust the distance between each position in the extension direction of the second magnet array 24 and the target material 1.

[0072] In this embodiment, as shown in Figures 7 and 8, the first adjusting member 31 includes a plurality of first adjusting components 311 arranged at intervals along the axial direction of the target material 1, the output end of the first adjusting component 311 is connected to the first magnetic yoke 21, and the output end of the first adjusting component 311 can move back and forth in the radial direction of the target material 1 to drive the first magnetic yoke 21 connected to the output end of the first adjusting component 311 to approach or move away from the target material 1, and the second adjusting member 32 includes a plurality of second adjusting components 321 arranged at intervals along the axial direction of the target material 1, the output end of the second adjusting component 321 is connected to the second magnetic yoke 23, and the output end of the second adjusting component 321 can move back and forth in the radial direction of the target material 1 to drive the second magnetic yoke 23 connected to the output end of the second adjusting component 321 to approach or move away from the target material 1. It should be noted that, under the action of the first magnet array 22 and the second magnet array 24, an etching track 200 is formed on the surface of the target 1, and the first side track 210 is arranged relative to one of the first magnet array 22 and the second magnet array 24, and the second side track 220 is arranged relative to the other of the first magnet array 22 and the second magnet array 24. When it is necessary to weaken the magnetic field strength of the first side track 210 as a whole, the first adjustment member 31 is adjusted to adjust the magnet array relative to the first side track 210 in a direction away from the target 1. For example, the magnet array can be moved 1.5 mm away from the target 1 to avoid over-adjustment. When it is necessary to increase the magnetic field strength of the first side track 210 as a whole, the adjustment component 3 is used to adjust the magnet array relative to the first side track 210 in a direction closer to the target 1. For example, the magnet array can be moved 1.5 mm towards the target 1 to avoid over-adjustment. In addition, the overall weakening and strengthening operations of the magnetic field strength of the second side runway 220 are adjusted in the same manner as the first side runway 210 , and only the distance between the corresponding magnet array and the target 1 needs to be adjusted.

[0073] In addition, the first magnetic yoke 21 and the second magnetic yoke 23 are both made of a soft material, and the first magnet array 22 is composed of a plurality of independent magnetic blocks arranged in sequence along the axial direction of the target material 1, and the second magnet array 24 is also composed of a plurality of independent magnetic blocks arranged in sequence along the axial direction of the target material 1. When the magnetic field strength of the first side runway 210 and the second side runway 220 is weakened, and the amount of weakening of the magnetic field strength gradually decreases along the direction of the drift current on the etching runway 200, the distance between each independent magnetic block in the magnet array corresponding to the runway and the target material 1 is adjusted by the corresponding adjustment member. Similarly, when the magnetic field strength of the first side runway 210 and the second side runway 220 is strengthened, and the amount of strengthening of the magnetic field strength gradually decreases along the opposite direction of the drift current on the etching runway 200, the distance between each independent magnetic block in the magnet array corresponding to the runway and the target material 1 is also adjusted by the corresponding adjustment member. It is sufficient to ensure that the magnetic blocks corresponding to the enhanced magnetic field are adjusted in the direction close to the target material 1, and the magnetic blocks corresponding to the weakened magnetic field are adjusted in the direction away from the target material 1. Since the magnet array is composed of multiple independent magnetic blocks and the yoke is made of soft material, the reliability of adjusting the distance between each adjustment point in the axial direction of the magnet array and the target 1 is guaranteed. Each position where the first adjustment component 311 and the second adjustment component 321 are provided is an adjustment point.

[0074] In this embodiment, the magnetron assembly 2 further includes a cooling tube 25 having a cooling water channel extending therethrough. The cooling water channel is configured to form a circulating water path within the target 1 to cool the magnetron assembly 2 and the target 1. The first magnetic yoke 21 and the second magnetic yoke 23 are both located on one side of the cooling tube 25. The first adjustment component 311 is a first adjustment bolt, which is threadedly connected to the cooling tube 25 and screwed through the cooling tube 25 to connect to the first magnetic yoke 21. The second adjustment component 321 is a second adjustment bolt, which is threadedly connected to the cooling tube 25 and screwed through the cooling tube 25 to connect to the second magnetic yoke 23. The adjustment component is designed as an adjustment bolt. By manually turning the adjustment bolt, the magnetic block at the corresponding position along the radial direction of the target 1 can be adjusted. This results in a simple structure, low cost, and easy adjustment. In this embodiment, since adjustment requires manual turning of the adjustment bolt, the vacuum chamber must be vented before manual adjustment.

[0075] In this embodiment, the sputtering cathode device further includes a detection element, which is configured to detect the film thickness distribution of the coated substrate so that an operator can obtain the film thickness distribution of the coated substrate. In some embodiments, the detection element is a sensor or a probe.

[0076] In other embodiments, the first adjusting component 311 and the second adjusting component 321 can also be designed as a motor screw, and the first adjusting component 311 and the second adjusting component 321 can be arranged in a vacuum chamber, and the first adjusting component 311 and the second adjusting component 321 can be communicatively connected with the detection component, so that the first adjusting component 311 and the second adjusting component 321 can automatically adjust the magnetic block at the corresponding position along the radial direction of the target material 1 according to the detection structure of the detection component, without breaking the vacuum of the vacuum chamber, making the adjustment operation more convenient and more intelligent.

[0077] Example 3

[0078] This embodiment also provides a sputtering apparatus comprising a vacuum chamber, a film-coated substrate, and the aforementioned sputtering cathode device. Both the film-coated substrate and the sputtering cathode device are disposed within the vacuum chamber. The magnetic lines of force generated by the magnetron assembly 2 cause atoms sputtered from the target material 1 to deposit onto the film-coated substrate. The sputtering apparatus provided in this embodiment, by utilizing the aforementioned sputtering cathode device, uniformly etches the target material, improving target material utilization. Furthermore, the apparatus eliminates the need for an additional anode assembly, thereby reducing costs and improving product yield.

Claims

1. A method for adjusting magnetron sputtering, comprising: Obtaining the film thickness distribution of a coating substrate on which the target material (1) is coated; According to the film thickness distribution of the coated substrate, determining which of the first side track (210) and the second side track (220) is a plasma enhanced side track and which is a plasma non-enhanced side track; wherein the first side track (210) and the second side track (220) are two relatively arranged side tracks obtained by dividing a linear area of ​​an etching track (200) on the surface of the target material (1); The magnetic field strength of the plasma enhanced side runway is weakened as a whole.

2. The method for adjusting magnetron sputtering according to claim 1, after the magnetic field strength of the plasma enhanced side runway is weakened as a whole, the method further comprises: The magnetic field strength of the first side track (210) and the second side track (220) is weakened, and the weakening amount of the magnetic field strength gradually decreases along the direction of the drift current on the etching track (200); or, The magnetic field strength of the first side track (210) and the second side track (220) is enhanced, and the enhancement amount of the magnetic field strength gradually decreases in the opposite direction of the drift current on the etching track (200).

3. The magnetron sputtering adjustment method according to claim 2, after weakening the magnetic field strength of the first side runway (210) and the second side runway (220), or strengthening the magnetic field strength of the first side runway (210) and the second side runway (220), the method further comprises: After the coating process is completed, obtaining morphological information of the target material (1) in the vacuum chamber; In response to the morphology information of the target material (1) meeting the preset requirements, the adjustment of the magnetic field strength is stopped; or, in response to the morphology information of the target material (1) not meeting the preset requirements, the step of returning to the step of weakening the magnetic field strength of the plasma enhanced side runway as a whole is executed.

4. The method for adjusting magnetron sputtering according to claim 3, wherein: Acquiring morphological information of the target material (1) in the vacuum chamber, comprising: The radial dimensions of a plurality of collection points arranged along the axial direction on the target material (1) are obtained.

5. The method for adjusting magnetron sputtering according to any one of claims 2 to 4, further comprising: When a plurality of the target materials (1) are arranged at intervals in a vacuum chamber, the plasma enhanced side track and the plasma non-enhanced side track on each of the target materials (1) are determined in turn, and the magnetic field intensity of the plasma enhanced side track on each of the target materials (1) is weakened as a whole in turn.

6. A sputtering cathode device, using the magnetron sputtering adjustment method according to any one of claims 1 to 5 to adjust the magnetic field strength at each position of the etching track (200) on the surface of the target material (1), the sputtering cathode device comprising: A target material (1), wherein the target material (1) is rotatably disposed in a vacuum chamber; A magnetron component (2) is arranged inside the target material (1); as well as An adjustment component (3) is arranged inside the target material (1) and the end of the adjustment component (3) is connected to the magnetron component (2), and the adjustment component (3) is configured to adjust the magnetic field strength at each position of the etching track (200) on the surface of the target material (1) according to the film thickness distribution of the coated substrate.

7. The sputtering cathode device according to claim 6, wherein: The magnetron assembly (2) comprises a first magnetic yoke (21), a first magnet array (22), a second magnetic yoke (23) and a second magnet array (24); the first magnetic yoke (21) and the second magnetic yoke (23) are both arranged in the target material (1); the first magnet array (22) is arranged on the first magnetic yoke (21); the second magnet array (24) is arranged on the second magnetic yoke (23); the first magnet array (22) and the second magnet array (24) are arranged adjacent to each other; and the first magnet array (22) and the second magnet array (24) both extend along the axial direction of the target material (1); The adjustment component (3) comprises a first adjustment member (31) and a second adjustment member (32), wherein the first adjustment member (31) is configured to adjust the distance between each position in the extension direction of the first magnet array (22) and the target material (1), and the second adjustment member (32) is configured to adjust the distance between each position in the extension direction of the second magnet array (24) and the target material (1).

8. The sputtering cathode device according to claim 7, wherein: The first adjusting member (31) comprises a plurality of first adjusting members (311) arranged at intervals along the axial direction of the target material (1), the output end of the first adjusting member (311) being connected to the first magnetic yoke (21), and the output end of the first adjusting member (311) being arranged to be able to reciprocate along the radial direction of the target material (1) so as to drive the first magnetic yoke (21) connected to the output end of the first adjusting member (311) to approach or move away from the target material (1); the second adjusting member (32) comprises a plurality of second adjusting members (321) arranged at intervals along the axial direction of the target material (1), the output end of the second adjusting member (321) being connected to the second magnetic yoke (23), and the output end of the second adjusting member (321) being arranged to be able to reciprocate along the radial direction of the target material (1) so as to drive the second magnetic yoke (23) connected to the output end of the second adjusting member (321) to approach or move away from the target material (1).

9. The sputtering cathode device according to claim 8, wherein: The magnetron assembly (2) further comprises a cooling pipe (25), the first magnetic yoke (21) and the second magnetic yoke (23) are both located on one side of the cooling pipe (25), the first adjustment component (311) is a first adjustment bolt, the first adjustment bolt is threadedly connected to the cooling pipe (25), and the first adjustment bolt is screwed through the cooling pipe (25) to be connected to the first magnetic yoke (21); The second adjusting component (321) is a second adjusting bolt, the second adjusting bolt is threadedly connected to the cooling pipe (25), and the second adjusting bolt is screwed through the cooling pipe (25) to be connected to the second magnetic yoke (23).

10. A measurement and control sputtering device, comprising a vacuum chamber, a coated substrate and a sputtering cathode device as described in any one of claims 6 to 9, wherein the coated substrate and the sputtering cathode device are both arranged in the vacuum chamber, and the magnetic lines of force generated by the magnetron assembly (2) promote the atoms sputtered from the target material (1) to be deposited onto the coated substrate.

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