Passive electronic component

Abstract

A passive electronic component 1A is provided with: a substrate 10 having a first principal surface 10a and a second principal surface 10b that oppose one another in a first direction D1; and a capacitor 20 provided to the substrate 10 on the first principal surface 10a side. The capacitor 20 includes a capacitance forming section 21 in which an internal electrode layer and a dielectric layer are alternately stacked in the first direction D1. The capacitance forming section 21 has three or more internal electrode layers. All of the internal electrode layers are counted in order from the substrate 10 side in the first direction D1 to establish a first group G1 to which internal electrode layers located at odd numbers belong and a second group G2 to which internal electrode layers located at even numbers belong; all of the internal electrode layers are counted in order from the substrate 10 side in the first direction D1 to establish, with N being an odd number 3 or greater, an N-th internal electrode layer that is located N-th and belongs to the first group G1 and an N-1-th internal electrode layer that is located N-1-th and belongs to the second group G2; and a second direction D2 is established, which is perpendicular to an average direction of current flowing through the capacitance forming section 21 when voltage is applied to the capacitance forming section 21, in plan view from the first direction D1. Then, in a cross-section running along the first direction D1 and the second direction D2, two ends of the N-th internal electrode layer of the first group G1 in the second direction D2 are located further outward in the second direction D2 than two ends of the N-1-th internal electrode layer of the second group G2 in the second direction D2.

Description

Passive Electronic Components

[0001] The present invention relates to passive electronic components.

[0002] Patent Document 1 discloses a stacked thin film capacitor in which electrodes belonging to one group, a dielectric layer, and electrodes belonging to the other group are alternately stacked on one main surface of a substrate so that the electrodes belonging to one group and the electrodes belonging to the other group face each other across the dielectric layer, and the stacked thin film capacitor is characterized in that at one end of the opposing region where the electrodes belonging to one group and the electrodes belonging to the other group face each other across the dielectric layer, there is a first connection portion where multiple electrodes belonging to one group are overlapped, and at the other end of the opposing region there is a second connection portion where multiple electrodes belonging to the other group are overlapped, and the first connection portion and the second connection portion are each further overlapped with a conductor layer for adjusting the thickness to reduce the step with the opposing region.

[0003] JP 2009-21514 A

[0004] In the stacked thin film capacitor described in Patent Document 1, the element body is constructed by alternately stacking electrodes belonging to one group, dielectric layers, and electrodes belonging to the other group on one main surface of a substrate, so that the electrodes belonging to one group face each other across a dielectric layer. However, in the stacked thin film capacitor described in Patent Document 1, for example, the configuration shown in Figure 1 of Patent Document 1, when a voltage is applied to the element body, the electric field generated between the electrode in one group closest to the substrate and the electrode in the other group closest to the substrate is likely to penetrate into the substrate. Therefore, in the stacked thin film capacitor described in Patent Document 1, power loss is likely to occur in the substrate when a voltage is applied to the element body, and as a result, the Q value (quality factor) of the stacked thin film capacitor is likely to decrease.

[0005] The present invention has been made to solve the above problems, and has an object to provide a passive electronic component that can suppress a decrease in the Q value due to an electric field penetrating into a substrate.

[0006] In a first aspect, a passive electronic component of the present invention comprises a substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having three or more internal electrode layers, and when all of the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the internal electrode layers located odd-numbered belong and a second group to which the internal electrode layers located even-numbered belong, and all of the internal electrode layers are counted in order from the substrate side in the first direction When counting sequentially, where N is an odd number greater than or equal to 3, an Nth internal electrode layer that is located Nth and belongs to the first group and an N-1th internal electrode layer that is located N-1st and belongs to the second group are defined, and a second direction that is perpendicular to the average direction of a current that flows in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined. In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the first group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the second group in the second direction.

[0007] In a second aspect, a passive electronic component of the present invention comprises a substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having four or more internal electrode layers, and when all of the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the internal electrode layers located odd-numbered belong and a second group to which the internal electrode layers located even-numbered belong, and all of the internal electrode layers are counted in order from the substrate side in the first direction When counting sequentially, where N is an even number greater than or equal to 4, an Nth internal electrode layer that is located Nth and belongs to the second group and an N-1th internal electrode layer that is located N-1st and belongs to the first group are defined, and a second direction that is perpendicular to the average direction of a current that flows in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined. In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the second group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the first group in the second direction.

[0008] In a third aspect, a passive electronic component of the present invention comprises a substrate having a first main surface and a second main surface facing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having three or more internal electrode layers, and when all the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong are defined, and in a planar view from the first direction, the peripheries of all the internal electrode layers of the second group are located inside the periphery of the first internal electrode layer of the first group that is located closest to the substrate.

[0009] According to the present invention, it is possible to provide a passive electronic component that can suppress a decrease in the Q value due to an electric field penetrating into a substrate.

[0010] FIG. 1 is a plan view schematic diagram showing an example of a passive electronic component according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 1 taken along line segment a1-a2. FIG. 3 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 1 taken along line segment b1-b2 (excluding the first external electrode). FIG. 4 is a cross-sectional view schematic diagram showing a step of preparing a substrate in an example of a method for manufacturing a passive electronic component according to a first embodiment of the present invention. FIG. 5 is a cross-sectional view schematic diagram showing a step of forming an insulating layer in an example of a method for manufacturing a passive electronic component according to a first embodiment of the present invention. FIG. 6 is a cross-sectional view schematic diagram showing a step of forming a first internal electrode layer in an example of a method for manufacturing a passive electronic component according to a first embodiment of the present invention. FIG. 7 is a cross-sectional view schematic diagram showing a step of forming a first dielectric layer in an example of a method for manufacturing a passive electronic component according to a first embodiment of the present invention. FIG. 8 is a cross-sectional view schematic diagram showing a step of forming a second internal electrode layer in an example of a method for manufacturing a passive electronic component according to a first embodiment of the present invention. FIG. 9 is a cross-sectional view schematically illustrating a step of forming a second dielectric layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 10 is a cross-sectional view schematically illustrating a step of forming a third internal electrode layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 11 is a cross-sectional view schematically illustrating a step of forming a third dielectric layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 12 is a cross-sectional view schematically illustrating a step of forming a fourth internal electrode layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 13 is a cross-sectional view schematically illustrating a step of forming a fourth dielectric layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 14 is a cross-sectional view schematically illustrating a step of forming a fifth internal electrode layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 15 is a cross-sectional view schematically illustrating a step of forming a moisture-resistant protective layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 16 is a cross-sectional view schematically illustrating a step of forming a resin protective layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention. FIG. 17 is a cross-sectional view schematically illustrating a step of forming a first external electrode and a second external electrode in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.FIG. 18 is a cross-sectional view schematically illustrating a step of forming first and second external electrodes in an example of a method for manufacturing a passive electronic component according to Embodiment 1 of the present invention. FIG. 19 is a cross-sectional view schematically illustrating a step of forming first and second external electrodes in an example of a method for manufacturing a passive electronic component according to Embodiment 1 of the present invention. FIG. 20 is a plan view schematically illustrating another example of a passive electronic component according to Embodiment 1 of the present invention. FIG. 21 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in FIG. 20 taken along line segment b3-b4 (excluding the first external electrodes). FIG. 22 is a cross-sectional view schematically illustrating another example of a cross section of the passive electronic component shown in FIG. 20 taken along line segment b3-b4 (excluding the first external electrodes). FIG. 23 is a plan view schematically illustrating yet another example of a passive electronic component according to Embodiment 1 of the present invention. FIG. 24 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in FIG. 23 taken along line segment b5-b6 (excluding the first external electrodes). FIG. 25 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 23 taken along line segment b5-b6 (excluding the first external electrode). FIG. 26 is a plan view schematic diagram showing an example of a passive electronic component according to embodiment 2 of the present invention. FIG. 27 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 26 taken along line segment c1-c2. FIG. 28 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 26 taken along line segment d1-d2 (excluding the first external electrode). FIG. 29 is a plan view schematic diagram showing another example of a passive electronic component according to embodiment 2 of the present invention. FIG. 30 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 29 taken along line segment d3-d4 (excluding the first external electrode). FIG. 31 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 29 taken along line segment d3-d4 (excluding the first external electrode). Fig. 32 is a plan view schematic diagram showing yet another example of a passive electronic component according to embodiment 2 of the present invention. Fig. 33 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in Fig. 32 taken along line segment d5-d6 (excluding the first external electrode). Fig. 34 is a cross-sectional view schematic diagram showing another example of a cross section of the passive electronic component shown in Fig. 32 taken along line segment d5-d6 (excluding the first external electrode). Fig. 35 is a plan view schematic diagram showing an example of a passive electronic component according to embodiment 3 of the present invention. Fig. 36 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in Fig. 35 taken along line segment e1-e2.FIG. 37 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 35 taken along line f1-f2 (excluding the first external electrode). FIG. 38 is a plan view schematic diagram showing another example of a passive electronic component according to embodiment 3 of the present invention. FIG. 39 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 38 taken along line e3-e4. FIG. 40 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 38 taken along line f3-f4 (excluding the first external electrode). FIG. 41 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 38 taken along line f3-f4 (excluding the first external electrode). FIG. 42 is a plan view schematic diagram showing yet another example of a passive electronic component according to embodiment 3 of the present invention. FIG. 43 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in FIG. 42 taken along line e5-e6. Fig. 44 is a cross-sectional schematic diagram showing an example of a cross section of the passive electronic component shown in Fig. 42 taken along line f5-f6 (excluding the first external electrode). Fig. 45 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in Fig. 42 taken along line f5-f6 (excluding the first external electrode).

[0011] The passive electronic component of the present invention will be described below. Note that the present invention is not limited to the following configurations and may be modified as appropriate without departing from the spirit of the present invention. Furthermore, a combination of multiple individual preferred configurations described below also constitutes the present invention.

[0012] The following embodiments are merely examples, and it goes without saying that partial substitution or combination of the configurations shown in different embodiments is possible. From embodiment 2 onwards, descriptions of matters common to embodiment 1 will be omitted, and differences will be mainly described. In particular, similar effects resulting from similar configurations will not be mentioned one after the other for each embodiment.

[0013] In the following description, when there is no need to particularly distinguish between the embodiments, they will simply be referred to as "passive electronic components of the present invention."

[0014] In the following, an electronic component having a capacitor will be shown as an example of the passive electronic component of the present invention. The passive electronic component of the present invention may be a capacitor itself.

[0015] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, scale, etc. may differ from those of the actual product.

[0016] In this specification, unless otherwise specified, terms indicating the relationship between elements (e.g., "parallel," "perpendicular," etc.) and terms indicating the shape of elements not only mean the literal strict form, but also mean a range that is substantially equivalent, for example, a range that includes a difference of about a few percent.

[0017] [Embodiment 1] As a first aspect, a passive electronic component of the present invention comprises a substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion has three or more internal electrode layers, and when all of the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the internal electrode layers located odd-numbered belong and a second group to which the internal electrode layers located even-numbered belong, and all of the internal electrode layers are counted in order from the substrate side in the first direction When counting sequentially, where N is an odd number greater than or equal to 3, an Nth internal electrode layer that is located Nth and belongs to the first group and an N-1th internal electrode layer that is located N-1st and belongs to the second group are defined, and a second direction that is perpendicular to the average direction of a current that flows in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined. In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the first group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the second group in the second direction.

[0018] Hereinafter, an example of the first aspect of the passive electronic component of the present invention will be described as a passive electronic component of embodiment 1 of the present invention.

[0019] Fig. 1 is a plan view schematic diagram showing an example of a passive electronic component according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view schematic diagram showing an example of a cross-section of the passive electronic component shown in Fig. 1 taken along line segment a1-a2. Fig. 3 is a cross-sectional view schematic diagram showing an example of a cross-section of the passive electronic component shown in Fig. 1 taken along line segment b1-b2 (excluding the first external electrode).

[0020] A passive electronic component 1A shown in FIGS. 1, 2, and 3 includes a substrate 10 and a capacitor 20.

[0021] The substrate 10 has a first major surface 10a and a second major surface 10b facing each other in a first direction D1.

[0022] The substrate 10 is preferably a semiconductor substrate, and in this case, examples of the material for the substrate 10 include semiconductor materials such as silicon and gallium arsenide.

[0023] The substrate 10 may be an insulating substrate. In this case, examples of the material for the substrate 10 include insulating materials such as glass and alumina.

[0024] The capacitor 20 is provided on the first major surface 10 a side of the substrate 10 .

[0025] The capacitor 20 has a capacitance forming portion 21 .

[0026] In the capacitance forming portion 21, internal electrode layers and dielectric layers are alternately stacked in the first direction D1.

[0027] The capacitance forming portion 21 has three or more internal electrode layers.

[0028] 2 and 3, the capacitance forming portion 21 is formed by laminating a first internal electrode layer 22a, a first dielectric layer 23a, a second internal electrode layer 22b, a second dielectric layer 23b, a third internal electrode layer 22c, a third dielectric layer 23c, a fourth internal electrode layer 22d, a fourth dielectric layer 23d, and a fifth internal electrode layer 22e in this order from the substrate 10 side in the first direction D1. That is, in the example shown in Fig. 2 and 3, the capacitance forming portion 21 has five internal electrode layers.

[0029] In the capacitance forming portion 21, one capacitor element having an MIM structure is formed by two internal electrode layers adjacent to each other in the first direction D1 and one dielectric layer sandwiched between the two internal electrode layers.

[0030] In the example shown in Figures 2 and 3, in the capacitance forming portion 21, a capacitor element constituted by the first internal electrode layer 22a, the first dielectric layer 23a, and the second internal electrode layer 22b, a capacitor element constituted by the second internal electrode layer 22b, the second dielectric layer 23b, and the third internal electrode layer 22c, a capacitor element constituted by the third internal electrode layer 22c, the third dielectric layer 23c, and the fourth internal electrode layer 22d, and a capacitor element constituted by the fourth internal electrode layer 22d, the fourth dielectric layer 23d, and the fifth internal electrode layer 22e are connected.

[0031] Examples of materials for the internal electrode layers include conductive materials such as metals such as copper, silver, gold, aluminum, and platinum, and alloys containing at least one of these metals.

[0032] The materials of the internal electrode layers may be the same as each other, may be different from each other, or may be partially different from each other.

[0033] Examples of the material for each dielectric layer include oxides such as silicon dioxide, aluminum oxide, hafnium oxide, and tantalum oxide, and nitrides such as silicon nitride.

[0034] The materials of the dielectric layers may be the same as each other, may be different from each other, or may be partially different from each other.

[0035] It should be noted that the above-mentioned dielectric layers are not shown in FIG.

[0036] For the passive electronic component 1A, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, a first group G1 is defined to which the odd-numbered internal electrode layers belong, and a second group G2 is defined to which the even-numbered internal electrode layers belong.

[0037] 1, 2, and 3, the first group G1 includes the first internal electrode layer 22a, the third internal electrode layer 22c, and the fifth internal electrode layer 22e, and in the example shown in Fig. 1, 2, and 3, the second group G2 includes the second internal electrode layer 22b and the fourth internal electrode layer 22d.

[0038] For the passive electronic component 1A, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, an Nth internal electrode layer is defined as the Nth internal electrode layer that is located in the Nth position and belongs to the first group G1, and an N-1th internal electrode layer is defined as the N-1th internal electrode layer that is located in the N-1th position and belongs to the second group G2, where N is an odd number greater than or equal to 3.

[0039] In the examples shown in Figures 1, 2, and 3, when N is an odd number greater than or equal to 3, the combination of the Nth internal electrode layer and the N-1th internal electrode layer corresponds to the combination of the third internal electrode layer 22c and the second internal electrode layer 22b (when N = 3) and the combination of the fifth internal electrode layer 22e and the fourth internal electrode layer 22d (when N = 5).

[0040] For the passive electronic component 1A, a second direction D2 is defined that is perpendicular to the average direction of a current that flows through the capacitance forming portion 21 when a voltage is applied to the capacitance forming portion 21, in a plan view from the first direction D1. In the example shown in Fig. 1, the second direction D2 is, among the directions perpendicular to the first direction D1, a direction that passes through a first external electrode 25a and a second external electrode 25b (described later).

[0041] "When voltage is applied to the capacitance forming portion 21" refers to the transient state during application of voltage to the capacitance forming portion 21 (the state during charging), rather than the state after voltage has been applied to the capacitance forming portion 21 (the state after charging is completed).

[0042] The "average direction of the current flowing through the capacitance-forming portion 21 when a voltage is applied to the capacitance-forming portion 21" refers to the substantial current direction obtained by averaging the directions of the current flowing through the capacitance-forming portion 21 when a voltage is applied to the capacitance-forming portion 21, as described above. In the example shown in FIG. 1 , when a voltage is applied to the capacitance-forming portion 21, i.e., when a voltage is applied between the first external electrode 25 a and the second external electrode 25 b described later, the current flowing through the capacitance-forming portion 21 from the second external electrode 25 b side to the first external electrode 25 a side includes a current component that flows in a curved shape (e.g., an arc-like shape) in addition to a current component that flows linearly (e.g., in the third direction D3). Even if this current component flows in a curved shape (e.g., an arc-like shape), the substantial current direction obtained by averaging the directions of the current components is defined as the average direction of the current flowing through the capacitance-forming portion 21. In the example shown in FIG. 1 , the average direction of the current flowing through the capacitance-forming portion 21 when a voltage is applied to the capacitance-forming portion 21 corresponds to the third direction D3 passing through the first external electrode 25 a and the second external electrode 25 b described later.

[0043] As a result, in the example shown in FIG. 1, the first direction D1, the second direction D2, and the third direction D3 are perpendicular to one another.

[0044] 1, the second direction D2 corresponds to the short-side direction of the passive electronic component 1A, and the third direction D3 corresponds to the long-side direction of the passive electronic component 1A. Alternatively, the second direction D2 may correspond to the long-side direction of the passive electronic component 1A, and the third direction D3 may correspond to the short-side direction of the passive electronic component 1A.

[0045] In the passive electronic component 1A, in a cross section along the first direction D1 and the second direction D2, both end portions in the second direction D2 of the Nth internal electrode layer of the first group G1 are positioned outward in the second direction D2 than both end portions in the second direction D2 of the N-1th internal electrode layer of the second group G2. Hereinafter, this feature will be referred to as the first feature.

[0046] The first feature is as follows in FIG. 3, which shows an example of a cross section of the passive electronic component 1A taken along the first direction D1 and the second direction D2.

[0047] (When N = 3) In the example shown in Figure 3, both end portions 22cp in the second direction D2 of the third internal electrode layer 22c of the first group G1 are located outward in the second direction D2 than both end portions 22bp in the second direction D2 of the second internal electrode layer 22b of the second group G2.

[0048] (When N = 5) In the example shown in Figure 3, both end portions 22ep of the fifth internal electrode layer 22e of the first group G1 in the second direction D2 are located outward in the second direction D2 than both end portions 22dp of the fourth internal electrode layer 22d of the second group G2 in the second direction D2.

[0049] In the passive electronic component 1A, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer of the first group G1 preferably covers, in the second direction D2, at least a part of each side surface (surface facing the second direction D2) of the N-1th internal electrode layer of the second group G2 at both end sides in the second direction D2. In other words, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer of the first group G1 preferably covers, in the second direction D2, at both end sides in the second direction D2, a part or the whole of each side surface of the N-1th internal electrode layer of the second group G2 at both end sides in the second direction D2. In other words, in the passive electronic component 1A, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer is preferably provided so as to cover the N-1th internal electrode layer over the entire area in the second direction D2. In FIG. 3, which shows an example of a cross section of the passive electronic component 1A taken along the first direction D1 and the second direction D2, the following is preferable.

[0050] 3, the third internal electrode layers 22c of the first group G1 preferably cover, in the second direction D2, at least a part of each side surface of the second internal electrode layers 22b of the second group G2 on the sides of both end portions 22cp in the second direction D2. That is, in the example shown in FIG. 3, the third internal electrode layers 22c are preferably provided so as to cover the second internal electrode layers 22b over the entire area in the second direction D2.

[0051] 3, the fifth internal electrode layer 22e of the first group G1 preferably covers, in the second direction D2, at least a part of each side surface of the fourth internal electrode layer 22d of the second group G2 on the sides of both end portions 22dp in the second direction D2, of the fourth internal electrode layer 22d in the second direction D2, on the sides of both end portions 22ep in the second direction D2. That is, in the example shown in FIG. 3, the fifth internal electrode layer 22e is preferably provided so as to cover the fourth internal electrode layer 22d over the entire area in the second direction D2.

[0052] In the passive electronic component 1A, because the first feature is established, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. For example, in the passive electronic component 1A, the end 22cp in the second direction D2 of the third internal electrode layer 22c of the first group G1 is positioned outward in the second direction D2 than the end 22bp in the second direction D2 of the second internal electrode layer 22b of the second group G2. As a result, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the portion of the first internal electrode layer 22a in the first group G1 closest to the substrate 10 on the end 22ap side in the second direction D2 and the portion of the second internal electrode layer 22b in the second group G2 closest to the substrate 10 on the end 22bp side in the second direction D2 is easily shielded by the portion of the third internal electrode layer 22c on the end 22cp side in the second direction D2. Therefore, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the first internal electrode layer 22a and the second internal electrode layer 22b is less likely to leak into the substrate 10.

[0053] As described above, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. Therefore, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, power loss is less likely to occur in the substrate 10, and as a result, the Q value of the passive electronic component 1A is less likely to decrease.

[0054] In the passive electronic component 1A, when N is at least one odd number greater than or equal to 3, in this case, it is sufficient that the first feature is satisfied in at least one of the cases where N = 3 and where N = 5. In the passive electronic component 1A, when N is all odd numbers greater than or equal to 3, in this case, it is particularly preferable that the first feature is satisfied in both the cases where N = 3 and where N = 5.

[0055] The capacitor 20 preferably further includes a first external electrode 25a electrically connected to all the internal electrode layers of the first group G1.

[0056] In the example shown in FIG. 2, the first external electrode 25a is electrically connected to all of the first internal electrode layer 22a, the third internal electrode layer 22c, and the fifth internal electrode layer 22e, which belong to the first group G1.

[0057] Examples of materials for the first external electrode 25a include conductive materials such as metals such as copper, nickel, silver, gold, aluminum, palladium, titanium, and tin, and alloys containing at least one of these metals.

[0058] The first external electrode 25a may have a single-layer structure or a multi-layer structure.

[0059] When the first external electrode 25a has a multi-layer structure, as shown in FIG. 2, the first external electrode 25a may have, in order from the substrate 10 side, a seed layer 26aa, a first plating layer 27aa, and a second plating layer 27ab.

[0060] The seed layer 26aa may be, for example, a laminated body in which a conductor layer made of titanium and a conductor layer made of copper are laminated in this order from the substrate 10 side.

[0061] The first plating layer 27aa may be, for example, a nickel plating layer.

[0062] The second plating layer 27ab may be, for example, a gold plating layer or a tin plating layer.

[0063] The capacitor 20 preferably further includes a second external electrode 25b electrically connected to all the internal electrode layers of the second group G2.

[0064] In the example shown in FIG. 2, the second external electrode 25b is electrically connected to all of the second internal electrode layers 22b and fourth internal electrode layers 22d that belong to the second group G2.

[0065] In the example shown in FIGS. 1 and 2, the second external electrode 25b is spaced apart from the first external electrode 25a in a direction perpendicular to the first direction D1, which is here the third direction D3.

[0066] Examples of materials for the second external electrode 25b include conductive materials such as metals such as copper, nickel, silver, gold, aluminum, palladium, titanium, and tin, and alloys containing at least one of these metals.

[0067] The second external electrode 25b may have a single-layer structure or a multi-layer structure.

[0068] When the second external electrode 25b has a multi-layer structure, as shown in FIG. 2, the second external electrode 25b may have, in order from the substrate 10 side, a seed layer 26ba, a first plating layer 27ba, and a second plating layer 27bb.

[0069] The seed layer 26ba may be, for example, a laminated body in which a conductor layer made of titanium and a conductor layer made of copper are laminated in this order from the substrate 10 side.

[0070] The first plating layer 27ba may be, for example, a nickel plating layer.

[0071] Examples of the second plating layer 27bb include a gold plating layer and a tin plating layer.

[0072] When the capacitor 20 has the first external electrode 25 a and the second external electrode 25 b, the capacitor 20 constitutes a two-terminal capacitor. When the capacitor 20 has the first external electrode 25 a and the second external electrode 25 b, the passive electronic component 1A can function alone.

[0073] The materials of the first external electrode 25a and the second external electrode 25b may be the same as or different from each other.

[0074] The layer structures of the first external electrode 25a and the second external electrode 25b may be the same as or different from each other.

[0075] The passive electronic component 1A preferably further includes an insulating layer 30 provided between the substrate 10 and the capacitor 20 in the first direction D1.

[0076] The insulating layer 30 preferably contacts the substrate 10 in the first direction D1.

[0077] The insulating layer 30 preferably contacts the capacitor 20 in the first direction D1.

[0078] The insulating layer 30 may be provided so as to cover the entire first major surface 10 a of the substrate 10 , or may be provided so as to cover a portion of the first major surface 10 a of the substrate 10 .

[0079] When the substrate 10 is a semiconductor substrate, the provision of the insulating layer 30 reduces the parasitic capacitance between the substrate 10 and the capacitor 20, making it easier to increase the Q value of the passive electronic component 1A.

[0080] When the substrate 10 is an insulating substrate, the insulating layer 30 may not be provided. When the insulating layer 30 is not provided, the substrate 10 and the capacitor 20 are preferably in contact with each other in the first direction D1.

[0081] In plan view from the first direction D1 , the periphery of the insulating layer 30 is preferably located outside the peripheries of all the internal electrode layers included in the capacitor 20 .

[0082] Examples of materials for the insulating layer 30 include insulating materials such as oxides, such as silicon dioxide and aluminum oxide, and nitrides, such as silicon nitride.

[0083] The passive electronic component 1A preferably further includes a moisture-resistant protective layer 40 that covers the capacitance forming portion 21. In this case, the moisture resistance of the capacitance forming portion 21 is improved. Specifically, the provision of the moisture-resistant protective layer 40 prevents moisture from penetrating into the internal electrode layer of the capacitance forming portion 21, thereby suppressing corrosion of the internal electrode layer.

[0084] The moisture-resistant protective layer 40 preferably covers the entire internal electrode layer and dielectric layer of the capacitor 20 except for the areas where the first external electrode 25a and second external electrode 25b are provided.

[0085] Examples of materials for the moisture-resistant protective layer 40 include moisture-resistant materials such as oxides such as silicon dioxide and nitrides such as silicon nitride.

[0086] In addition, the moisture-resistant protective layer 40 is not shown in FIG.

[0087] The passive electronic component 1A preferably further includes a resin protective layer 50 that covers the substrate 10 and the capacitance forming portion 21. In this case, the substrate 10 and the capacitance forming portion 21 are protected from moisture.

[0088] The resin protective layer 50 preferably covers the entire internal electrode layer and dielectric layer of the capacitor 20 except for the areas where the first external electrode 25a and second external electrode 25b are provided.

[0089] Examples of materials for the resin protective layer 50 include resin materials such as polyimide resin and resins in solder resist.

[0090] In addition, the resin protective layer 50 is not shown in FIG.

[0091] When the passive electronic component 1A has the moisture-resistant protective layer 40 and the resin protective layer 50, the resin protective layer 50 preferably covers the entire moisture-resistant protective layer 40.

[0092] When the passive electronic component 1A has the moisture-resistant protective layer 40 and the resin protective layer 50, the first external electrode 25a is preferably provided inside a through-hole 60ha that penetrates at least the moisture-resistant protective layer 40 and the resin protective layer 50 in the first direction D1. In other words, the first external electrode 25a is preferably connected to the fifth internal electrode layer 22e via the through-hole 60ha.

[0093] When the passive electronic component 1A has the moisture-resistant protective layer 40 and the resin protective layer 50, the second external electrode 25b is preferably provided inside a through-hole 60hb that penetrates in the first direction D1 at least the moisture-resistant protective layer 40 and the resin protective layer 50. In other words, the second external electrode 25b is preferably connected to the fourth internal electrode layer 22d via the through-hole 60hb.

[0094] When the passive electronic component 1A has the moisture-resistant protective layer 40 and the resin protective layer 50, the passive electronic component 1A has the first feature, so that when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate not only into the substrate 10 but also into the moisture-resistant protective layer 40 and the resin protective layer 50. For example, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the portion of the first internal electrode layer 22a of the first group G1 on the side of the end 22ap in the second direction D2 and the portion of the second internal electrode layer 22b of the second group G2 on the side of the end 22bp in the second direction D2 is more likely to be shielded by the portion of the third internal electrode layer 22c on the side of the end 22cp in the second direction D2. Therefore, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the first internal electrode layer 22a and the second internal electrode layer 22b is less likely to penetrate into the moisture-resistant protective layer 40 and the resin protective layer 50.

[0095] As described above, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, a deviation in the capacitance of the capacitance forming portion 21 is less likely to occur due to the electric field circulating along a path that passes in order through the internal electrode layers of the first group G1, the moisture-resistant protective layer 40, the resin protective layer 50, the moisture-resistant protective layer 40, and the internal electrode layers of the second group G2. Furthermore, in the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, power loss due to the dielectric loss tangent (tan δ) in the resin protective layer 50 is less likely to occur, and as a result, the Q value of the passive electronic component 1A is less likely to decrease.

[0096] The passive electronic component 1A is manufactured, for example, by the following method.

[0097] <Step of Preparing a Substrate> FIG. 4 is a schematic cross-sectional view showing the step of preparing a substrate in an example of the method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0098] As shown in FIG. 4, a substrate 10 is prepared.

[0099] <Step of Forming Insulating Layer> FIG. 5 is a cross-sectional view schematically illustrating the step of forming an insulating layer in an example of the method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0100] An insulating layer made of an insulating material is formed on the first main surface 10a of the substrate 10 by a method such as CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition).The insulating layer is then patterned using a combination of photolithography and etching to form an insulating layer 30 as shown in FIG.

[0101] <Step of Forming First Internal Electrode Layers> FIG. 6 is a cross-sectional view schematically illustrating a step of forming first internal electrode layers in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0102] An electrode layer made of a conductive material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 5 from the first main surface 10a side of the substrate 10. Thereafter, this electrode layer is patterned by a combination of photolithography and etching methods to form a first internal electrode layer 22a as shown in Fig. 6.

[0103] <Step of Forming First Dielectric Layer> FIG. 7 is a cross-sectional view schematically illustrating the step of forming a first dielectric layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0104] A dielectric layer made of a dielectric material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 6 from the first main surface 10a side of the substrate 10. Then, this dielectric layer is patterned by a combination of photolithography and etching to form the first dielectric layer 23a as shown in Fig. 7. Specifically, the first dielectric layer 23a is formed so as to cover the first internal electrode layer 22a and the insulating layer 30 from the first main surface 10a side of the substrate 10.

[0105] <Step of Forming Second Internal Electrode Layers> FIG. 8 is a cross-sectional view schematically showing the step of forming second internal electrode layers in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0106] An electrode layer made of a conductive material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 7 from the first main surface 10a side of the substrate 10. Then, this electrode layer is patterned by a combination of photolithography and etching to form the second internal electrode layer 22b as shown in Fig. 8. Specifically, the second internal electrode layer 22b is formed so as to be adjacent to the first internal electrode layer 22a in the first direction D1, with the first dielectric layer 23a sandwiched therebetween.

[0107] <Step of Forming Second Dielectric Layer> FIG. 9 is a cross-sectional view schematically illustrating the step of forming a second dielectric layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0108] A dielectric layer made of a dielectric material is formed by CVD, PVD, or the like so as to cover the structure shown in FIG. 8 from the first main surface 10a side of the substrate 10. Then, this dielectric layer is patterned using a combination of photolithography and etching to form a second dielectric layer 23b as shown in FIG. 9 . Specifically, the second dielectric layer 23b is formed so as to cover the second internal electrode layer 22b and the first dielectric layer 23a from the first main surface 10a side of the substrate 10. At this time, a through hole 23ah is formed penetrating the first dielectric layer 23a in the first direction D1 so as to expose a portion of the first internal electrode layer 22a. Furthermore, a through hole 23bha is formed penetrating the second dielectric layer 23b in the first direction D1 at a position overlapping the through hole 23ah in the first direction D1 so as to expose a portion of the first internal electrode layer 22a.

[0109] <Step of Forming Third Internal Electrode Layer> FIG. 10 is a cross-sectional view schematically showing the step of forming a third internal electrode layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0110] An electrode layer made of a conductive material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 9 from the first main surface 10a side of the substrate 10. This electrode layer is then patterned using a combination of photolithography and etching to form the third internal electrode layer 22c as shown in Fig. 10. Specifically, the third internal electrode layer 22c is formed so as to be adjacent to the second internal electrode layer 22b in the first direction D1, with the second dielectric layer 23b sandwiched therebetween. Furthermore, the third internal electrode layer 22c is formed inside the through holes 23ah and 23bha so as to connect to the first internal electrode layer 22a exposed from the through holes 23ah and 23bha.

[0111] <Step of Forming Third Dielectric Layer> FIG. 11 is a cross-sectional view schematically illustrating the step of forming a third dielectric layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0112] A dielectric layer made of a dielectric material is formed by CVD, PVD, or the like so as to cover the structure shown in FIG. 10 from the first main surface 10a of the substrate 10. Then, this dielectric layer is patterned using a combination of photolithography and etching to form a third dielectric layer 23c as shown in FIG. 11 . Specifically, the third dielectric layer 23c is formed so as to cover the third internal electrode layer 22c and the second dielectric layer 23b from the first main surface 10a of the substrate 10. At this time, a through hole 23bhb is provided through the second dielectric layer 23b in the first direction D1 so as to expose a portion of the second internal electrode layer 22b. Furthermore, a through hole 23cha is provided through the third dielectric layer 23c in the first direction D1 at a position overlapping the through hole 23bhb in the first direction D1 so as to expose a portion of the second internal electrode layer 22b.

[0113] <Step of Forming Fourth Internal Electrode Layer> FIG. 12 is a cross-sectional view schematically showing the step of forming a fourth internal electrode layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0114] An electrode layer made of a conductive material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 11 from the first main surface 10a side of the substrate 10. This electrode layer is then patterned using a combination of photolithography and etching to form a fourth internal electrode layer 22d as shown in Fig. 12. Specifically, the fourth internal electrode layer 22d is formed so as to be adjacent to the third internal electrode layer 22c across the third dielectric layer 23c in the first direction D1. Furthermore, the fourth internal electrode layer 22d is formed inside the through hole 23bhb and the through hole 23cha so as to connect to the second internal electrode layer 22b exposed from the through hole 23bhb and the through hole 23cha.

[0115] <Step of Forming Fourth Dielectric Layer> FIG. 13 is a cross-sectional view schematically illustrating the step of forming a fourth dielectric layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0116] A dielectric layer made of a dielectric material is formed by CVD, PVD, or the like so as to cover the structure shown in FIG. 12 from the first main surface 10a side of the substrate 10. Then, this dielectric layer is patterned using a combination of photolithography and etching to form a fourth dielectric layer 23d as shown in FIG. 13 . Specifically, the fourth dielectric layer 23d is formed so as to cover the fourth internal electrode layer 22d and the third dielectric layer 23c from the first main surface 10a side of the substrate 10. At this time, a through hole 23chb is provided through the third dielectric layer 23c in the first direction D1 so as to expose a portion of the third internal electrode layer 22c. Furthermore, a through hole 23dha is provided through the fourth dielectric layer 23d in the first direction D1 at a position overlapping the through hole 23chb in the first direction D1 so as to expose a portion of the third internal electrode layer 22c. It is preferable that the through holes 23chb and 23dha are provided at positions overlapping with the through holes 23ah and 23bha in the first direction D1.

[0117] <Step of Forming Fifth Internal Electrode Layer> FIG. 14 is a cross-sectional view schematically showing the step of forming a fifth internal electrode layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0118] An electrode layer made of a conductive material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in Fig. 13 from the first main surface 10a side of the substrate 10. Then, this electrode layer is patterned using a combination of photolithography and etching to form a fifth internal electrode layer 22e as shown in Fig. 14. Specifically, the fifth internal electrode layer 22e is formed so as to be adjacent to the fourth internal electrode layer 22d across the fourth dielectric layer 23d in the first direction D1. Furthermore, the fifth internal electrode layer 22e is formed inside the through holes 23chb and 23dha so as to connect to the third internal electrode layer 22c exposed from the through holes 23chb and 23dha.

[0119] By the above steps, a capacitance forming portion 21 is formed, in which the first internal electrode layer 22a, the first dielectric layer 23a, the second internal electrode layer 22b, the second dielectric layer 23b, the third internal electrode layer 22c, the third dielectric layer 23c, the fourth internal electrode layer 22d, the fourth dielectric layer 23d, and the fifth internal electrode layer 22e are stacked in order from the substrate 10 side in the first direction D1.

[0120] <Step of Forming Moisture-Resistant Protective Layer> FIG. 15 is a cross-sectional view schematically illustrating a step of forming a moisture-resistant protective layer in an example of a method for manufacturing a passive electronic component according to the first embodiment of the present invention.

[0121] A moisture-resistant layer made of a moisture-resistant material is formed by a CVD method, a PVD method, or the like so as to cover the structure shown in FIG. 14 from the first main surface 10a side of the substrate 10. Then, the moisture-resistant layer is patterned using a combination of photolithography and etching to form a moisture-resistant protective layer 40 as shown in FIG. 15 . Specifically, the moisture-resistant protective layer 40 is formed so as to cover the fifth internal electrode layer 22e and the fourth dielectric layer 23d from the first main surface 10a side of the substrate 10. At this time, a through hole 40ha is provided through the moisture-resistant protective layer 40 in the first direction D1 so as to expose a portion of the fifth internal electrode layer 22e. It is preferable to provide the through hole 40ha at a position overlapping the through hole 23ah, the through hole 23bha, the through hole 23chb, and the through hole 23dha in the first direction D1. Also, a through hole 23dhb is provided that penetrates the fourth dielectric layer 23d in the first direction D1 so as to expose a portion of the fourth internal electrode layer 22d. Furthermore, a through hole 40hb that penetrates the moisture-resistant protective layer 40 in the first direction D1 is provided at a position overlapping the through hole 23dhb in the first direction D1 so as to expose a portion of the fourth internal electrode layer 22d. It is preferable to provide the through hole 23dhb and the through hole 40hb at a position overlapping the through hole 23bhb and the through hole 23cha in the first direction D1.

[0122] <Step of Forming Resin Protective Layer> FIG. 16 is a cross-sectional view schematically illustrating the step of forming a resin protective layer in the example of the method for manufacturing the passive electronic component according to the first embodiment of the present invention.

[0123] A resin layer made of a resin material is formed by spin coating or the like so as to cover the structure shown in Fig. 15 from the first main surface 10a side of the substrate 10. Thereafter, the resin layer is patterned using only photolithography if the resin material of the resin layer is photosensitive, or using a combination of photolithography and etching if the resin material of the resin layer is non-photosensitive, thereby forming a resin protective layer 50 as shown in Fig. 16. Specifically, the resin protective layer 50 is formed so as to cover the substrate 10 and the moisture-resistant protective layer 40 from the first main surface 10a side of the substrate 10. At this time, a through hole 50ha penetrating the resin protective layer 50 in the first direction D1 is provided at a position overlapping the through hole 40ha in the first direction D1 so as to expose a portion of the fifth internal electrode layer 22e. Furthermore, a through hole 50hb that penetrates the resin protective layer 50 in the first direction D1 is provided at a position that overlaps the through hole 23dhb and the through hole 40hb in the first direction D1 so as to expose a part of the fourth internal electrode layer 22d.

[0124] Through the above steps, a through hole 60ha is formed by the through hole 40ha and the through hole 50ha communicating in the first direction D1 so as to expose a part of the fifth internal electrode layer 22e. Furthermore, a through hole 60hb is formed by the through hole 23dhb, the through hole 40hb, and the through hole 50hb communicating in the first direction D1 so as to expose a part of the fourth internal electrode layer 22d.

[0125] <Process of forming first external electrode and second external electrode> Figures 17, 18, and 19 are cross-sectional schematic views showing the process of forming the first external electrode and the second external electrode in an example of a method for manufacturing a passive electronic component according to embodiment 1 of the present invention.

[0126] As shown in FIG. 17, a seed layer 26 is formed so as to cover the structure shown in FIG. 16 from the first main surface 10a side of the substrate 10.

[0127] Next, by combining plating and photolithography, a first plating layer 27aa and a second plating layer 27ab are sequentially formed at positions overlapping with the through hole 60ha in the first direction D1, as shown in Fig. 18. Furthermore, by combining plating and photolithography, a first plating layer 27ba and a second plating layer 27bb are sequentially formed at positions overlapping with the through hole 60hb in the first direction D1, as shown in Fig. 18.

[0128] Then, as shown in Figure 19, by removing a portion of the seed layer 26 by an etching method or the like, a seed layer 26aa is formed at a position overlapping the through hole 60ha in the first direction D1, and a seed layer 26ba is formed at a position overlapping the through hole 60hb in the first direction D1.

[0129] In this manner, the first external electrode 25a is formed, which has the seed layer 26aa, the first plating layer 27aa, and the second plating layer 27ab in this order from the substrate 10 side. Specifically, the first external electrode 25a is formed so as to be connected to the fifth internal electrode layer 22e via the through hole 60ha.

[0130] Furthermore, a second external electrode 25b is formed having a seed layer 26ba, a first plating layer 27ba, and a second plating layer 27bb in this order from the substrate 10 side. Specifically, the second external electrode 25b is formed so as to be connected to the fourth internal electrode layer 22d via the through hole 60hb.

[0131] Through the above steps, the capacitor 20 is formed, which has the capacitance forming portion 21, the first external electrode 25a, and the second external electrode 25b.

[0132] In this way, the passive electronic component 1A is manufactured.

[0133] 4 to 19 illustrate the first embodiment of the passive electronic component of the present invention in which one capacitor is formed on a substrate, but multiple capacitors may also be formed on a substrate. When multiple capacitors are formed on a substrate, the multiple capacitors may be formed at the same time or at different times. When multiple capacitors are formed on a substrate, a passive electronic component having multiple capacitors may be singulated into passive electronic components having a single capacitor.

[0134] 1, 2, and 3 illustrate a case where the capacitance forming portion has five internal electrode layers, but the capacitance forming portion may have three or more internal electrode layers. In other words, in the first embodiment of the passive electronic component of the present invention, the number of internal electrode layers included in the capacitance forming portion is not limited to the five layers described above, as long as it is three or more. Below, an example is shown where the capacitance forming portion has four internal electrode layers.

[0135] Fig. 20 is a plan view schematically illustrating another example of the passive electronic component according to Embodiment 1 of the present invention. Fig. 21 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in Fig. 20 taken along line b3-b4 (excluding the first external electrode).

[0136] 20 and 21 , the capacitance forming portion 21 is formed by laminating a first internal electrode layer 22 a, a first dielectric layer 23 a, a second internal electrode layer 22 b, a second dielectric layer 23 b, a third internal electrode layer 22 c, a third dielectric layer 23 c, and a fourth internal electrode layer 22 d in this order from the substrate 10 side in the first direction D1. That is, in the passive electronic component 1B, the capacitance forming portion 21 has four internal electrode layers.

[0137] In the passive electronic component 1B, the capacitance forming portion 21 is provided in a substantially central region in the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1.

[0138] FIG. 22 is a schematic cross-sectional view showing another example of the cross section of the passive electronic component shown in FIG. 20 taken along line b3-b4 (excluding the first external electrode).

[0139] 22, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, an N-2-th internal electrode layer is determined to be located in the N-2th position and belong to the first group G1, where N is an odd number of 3 or more. Specifically, in the example shown in FIG. 22, when N is an odd number of 3 or more, the combination of the N-th internal electrode layer and the N-2-th internal electrode layer corresponds to the combination of the third internal electrode layer 22c and the first internal electrode layer 22a (when N=3).

[0140] In the example shown in Figure 22, in a cross section along the first direction D1 and the second direction D2, the Nth internal electrode layer and the N-2th internal electrode layer of the first group G1 are connected to each other at both end sides in the second direction D2. Specifically, in the example shown in Figure 22, a portion of the third internal electrode layer 22c of the first group G1 on one end 22cp side in the second direction D2 and a portion of the first internal electrode layer 22a of the first group G1 on one end 22ap side in the second direction D2 are connected to each other. Also, in the example shown in Figure 22, a portion of the third internal electrode layer 22c of the first group G1 on the other end 22cp side in the second direction D2 and a portion of the first internal electrode layer 22a of the first group G1 on the other end 22ap side in the second direction D2 are connected to each other.

[0141] 22 , unlike the example shown in Fig. 21 , the first dielectric layer 23 a and the second dielectric layer 23 b are not provided between a portion of the third internal electrode layer 22 c on the one end 22 cp side in the second direction D2 and a portion of the first internal electrode layer 22 a on the one end 22 ap side in the second direction D2. Also, in the example shown in Fig. 22 , unlike the example shown in Fig. 21 , the first dielectric layer 23 a and the second dielectric layer 23 b are not provided between a portion of the third internal electrode layer 22 c on the other end 22 cp side in the second direction D2 and a portion of the first internal electrode layer 22 a on the other end 22 ap side in the second direction D2.

[0142] 22 , in which the third internal electrode layer 22 c and the first internal electrode layer 22 a are connected to each other at both end portions in the second direction D2, compared to the example shown in FIG. 21 in which the third internal electrode layer 22 c and the first internal electrode layer 22 a are not connected to each other at both end portions in the second direction D2, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the portion of the first internal electrode layer 22 a on the end 22 ap side in the second direction D2 and the portion of the second internal electrode layer 22 b on the end 22 bp side in the second direction D2 is more likely to be shielded by the portion of the third internal electrode layer 22 c on the end 22 cp side in the second direction D2. Therefore, in the example shown in FIG. 22 , compared to the example shown in FIG. 21 , when a voltage is applied to the capacitance forming portion 21, the electric field generated between the first internal electrode layer 22 a and the second internal electrode layer 22 b is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Figure 22, when a voltage is applied to the capacitance forming portion 21, the deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, the power loss due to the dielectric tangent in the resin protective layer 50 is suppressed, compared to the example shown in Figure 21.

[0143] Fig. 23 is a plan view schematically illustrating yet another example of the passive electronic component according to Embodiment 1 of the present invention. Fig. 24 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in Fig. 23 taken along line b5-b6 (excluding the first external electrode).

[0144] In the passive electronic component 1C shown in FIGS. 23 and 24, the capacitance forming portion 21 also has four internal electrode layers, similar to the passive electronic component 1B.

[0145] In the passive electronic component 1C, the capacitance forming portion 21 is provided over substantially the entire area (excluding the area overlapping with the first external electrode 25a and the second external electrode 25b) in the second direction D2 and the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1. In the passive electronic component 1C, the area of ​​the internal electrode layer in the capacitance forming portion 21 is larger when the capacitor 20 is viewed in plan from the first direction D1, compared to the passive electronic component 1B, and therefore the electrostatic capacitance of the capacitance forming portion 21 is larger.

[0146] In the passive electronic component 1C, unlike the passive electronic component 1B, the peripheries of all the internal electrode layers of the second group G2 are located inside the periphery of the first internal electrode layer 22a of the first group G1, which is located closest to the substrate 10, in a plan view from the first direction D1. Specifically, in the passive electronic component 1C, the peripheries of the second internal electrode layer 22b and the fourth internal electrode layer 22d of the second group G2 are both located inside the periphery of the first internal electrode layer 22a in a plan view from the first direction D1. As a result, in the passive electronic component 1C, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. Therefore, in the passive electronic component 1C, when a voltage is applied to the capacitance forming portion 21, power loss in the substrate 10 is less likely to occur, and as a result, the Q value of the passive electronic component 1C is less likely to decrease.

[0147] In the passive electronic component 1C, in a plan view from the first direction D1, the peripheries of the internal electrode layers in the first group G1 except for the first internal electrode layer 22 a are located inside the periphery of the first internal electrode layer 22 a. In the example shown in Fig. 23, the periphery of the third internal electrode layer 22 c in the first group G1 is located inside the periphery of the first internal electrode layer 22 a.

[0148] In the passive electronic component 1C, in a plan view from the first direction D1, the periphery of the N-th internal electrode layer of the first group G1 is located outside the periphery of the (N-1)th internal electrode layer of the second group G2, where N is an odd number greater than or equal to 3. In the example shown in Fig. 23, the periphery of the third internal electrode layer 22c of the first group G1 is located outside the periphery of the second internal electrode layer 22b of the second group G2.

[0149] Therefore, in a cross section (e.g., FIG. 24 ) of the passive electronic component 1C taken along the first direction D1 and the second direction D2, when N is an odd number greater than or equal to 3, both end portions in the second direction D2 of the N-1th internal electrode layer of the first group G1 are located outward in the second direction D2 from both end portions in the second direction D2 of the N-1th internal electrode layer of the second group G2. Furthermore, in a cross section of the passive electronic component 1C taken along the first direction D1 and the third direction D3, when N is an odd number greater than or equal to 3, both end portions in the third direction D3 of the N-1th internal electrode layer of the second group G2 are located outward in the third direction D3 from both end portions in the third direction D3 of the N-1th internal electrode layer of the second group G2.

[0150] FIG. 25 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 23 taken along line b5-b6 (excluding the first external electrode).

[0151] 22 , in the cross section along the first direction D1 and the second direction D2, the Nth internal electrode layer and the N-2th internal electrode layer of the first group G1 are connected to each other at both end sides in the second direction D2. Specifically, in the example shown in FIG. 25 , a portion of the third internal electrode layer 22c of the first group G1 on one end 22cp side in the second direction D2 and a portion of the first internal electrode layer 22a of the first group G1 on one end 22ap side in the second direction D2 are connected to each other. Also, in the example shown in FIG. 25 , a portion of the third internal electrode layer 22c of the first group G1 on the other end 22cp side in the second direction D2 and a portion of the first internal electrode layer 22a of the first group G1 on the other end 22ap side in the second direction D2 are connected to each other.

[0152] 25 in which the third internal electrode layer 22c and the first internal electrode layer 22a are connected to each other at both end sides in the second direction D2, compared to the example shown in Fig. 24 in which the third internal electrode layer 22c and the first internal electrode layer 22a are not connected to each other at both end sides in the second direction D2, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the first internal electrode layer 22a and the second internal electrode layer 22b is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Fig. 25, when a voltage is applied to the capacitance forming portion 21, a deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed compared to the example shown in Fig. 24, and further, power loss due to the dielectric tangent in the resin protective layer 50 is suppressed.

[0153] [Embodiment 2] As a second aspect, a passive electronic component of the present invention includes a substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion has four or more internal electrode layers, and when all of the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the internal electrode layers located odd-numbered belong and a second group to which the internal electrode layers located even-numbered belong are defined, and all of the internal electrode layers are counted in order from the substrate side in the first direction When counting sequentially, where N is an even number greater than or equal to 4, an Nth internal electrode layer that is located Nth and belongs to the second group and an N-1th internal electrode layer that is located N-1st and belongs to the first group are defined, and a second direction that is perpendicular to the average direction of a current that flows in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined. In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the second group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the first group in the second direction.

[0154] Hereinafter, an example of the second aspect of the passive electronic component of the present invention will be described as a passive electronic component of embodiment 2 of the present invention.

[0155] Fig. 26 is a plan view schematic diagram showing an example of a passive electronic component according to embodiment 2 of the present invention. Fig. 27 is a cross-sectional view schematic diagram showing an example of a cross-section of the passive electronic component shown in Fig. 26 taken along line segment c1-c2. Fig. 28 is a cross-sectional view schematic diagram showing an example of a cross-section of the passive electronic component shown in Fig. 26 taken along line segment d1-d2 (excluding the first external electrode).

[0156] A passive electronic component 2A shown in FIGS. 26, 27, and 28 is similar to the passive electronic component 1A (see FIGS. 1, 2, and 3) except for the following configuration.

[0157] In the passive electronic component 2A, the capacitance forming portion 21 has four or more internal electrode layers.

[0158] 27 and 28, the capacitance forming portion 21 is formed by laminating a first internal electrode layer 22a, a first dielectric layer 23a, a second internal electrode layer 22b, a second dielectric layer 23b, a third internal electrode layer 22c, a third dielectric layer 23c, a fourth internal electrode layer 22d, a fourth dielectric layer 23d, and a fifth internal electrode layer 22e in this order from the substrate 10 side in the first direction D1. That is, in the example shown in Fig. 27 and 28, the capacitance forming portion 21 has five internal electrode layers.

[0159] For the passive electronic component 2A, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, a first group G1 is defined to which the odd-numbered internal electrode layers belong, and a second group G2 is defined to which the even-numbered internal electrode layers belong.

[0160] 26, 27, and 28, the first group G1 includes the first internal electrode layer 22a, the third internal electrode layer 22c, and the fifth internal electrode layer 22e. In the examples shown in Fig. 26, 27, and 28, the second group G2 includes the second internal electrode layer 22b and the fourth internal electrode layer 22d.

[0161] For the passive electronic component 2A, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, an Nth internal electrode layer is defined as the Nth internal electrode layer that is located in the Nth position and belongs to the second group G2, and an N-1th internal electrode layer is defined as the N-1th internal electrode layer that is located in the N-1th position and belongs to the first group G1, where N is an even number greater than or equal to 4.

[0162] In the examples shown in Figures 26, 27, and 28, when N is an even number greater than or equal to 4, the combination of the Nth internal electrode layer and the N-1th internal electrode layer corresponds to the combination of the fourth internal electrode layer 22d and the third internal electrode layer 22c (when N = 4).

[0163] A second direction D2 is defined for the passive electronic component 2A, which is perpendicular to the average direction of a current flowing through the capacitance generating portion 21 when a voltage is applied to the capacitance generating portion 21 in a plan view from the first direction D1.

[0164] 26, the second direction D2 is a direction perpendicular to the first direction D1 that is perpendicular to the direction passing through the first external electrode 25a and the second external electrode 25b. In the example shown in Fig. 26, the average direction of the current flowing through the capacitance forming portion 21 when a voltage is applied to the capacitance forming portion 21 corresponds to the third direction D3 that passes through the first external electrode 25a and the second external electrode 25b.

[0165] In the passive electronic component 2A, in a cross section along the first direction D1 and the second direction D2, both end portions in the second direction D2 of the Nth internal electrode layer of the second group G2 are located outward in the second direction D2 than both end portions in the second direction D2 of the N-1th internal electrode layer of the first group G1. Hereinafter, this feature will be referred to as the second feature.

[0166] The second feature is as follows in FIG. 28, which shows an example of a cross section of the passive electronic component 2A taken along the first direction D1 and the second direction D2.

[0167] (When N = 4) In the example shown in Figure 28, both end portions 22dp in the second direction D2 of the fourth internal electrode layer 22d of the second group G2 are located outward in the second direction D2 than both end portions 22cp in the second direction D2 of the third internal electrode layer 22c of the first group G1.

[0168] In the passive electronic component 2A, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer of the second group G2 preferably covers, in the second direction D2, at least a part of each side surface (surface facing the second direction D2) of the N-1th internal electrode layer of the first group G1 at both end sides in the second direction D2. In other words, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer of the second group G2 preferably covers, in the second direction D2, at both end sides in the second direction D2, a part or the whole of each side surface of the N-1th internal electrode layer of the first group G1 at both end sides in the second direction D2. In other words, in the passive electronic component 2A, in a cross section taken along the first direction D1 and the second direction D2, the Nth internal electrode layer is preferably provided so as to cover the N-1th internal electrode layer over the entire area in the second direction D2. In FIG. 28 showing an example of a cross section of the passive electronic component 2A taken along the first direction D1 and the second direction D2, the following is preferable.

[0169] 28 , the fourth internal electrode layer 22d of the second group G2 preferably covers, in the second direction D2, at least a part of each side surface of the third internal electrode layer 22c of the first group G1 on the side of both end portions 22cp in the second direction D2, on the side of both end portions 22dp in the second direction D2. That is, in the example shown in FIG. 28 , the fourth internal electrode layer 22d is preferably provided so as to cover the third internal electrode layer 22c over the entire area in the second direction D2.

[0170] In the passive electronic component 2A, because the second feature is established, when a voltage is applied to the capacitance forming portion 21, an electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. For example, in the passive electronic component 2A, the end 22dp in the second direction D2 of the fourth internal electrode layer 22d of the second group G2 is located outward in the second direction D2 than the end 22cp in the second direction D2 of the third internal electrode layer 22c of the first group G1. As a result, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated particularly between the portion of the third internal electrode layer 22c of the first group G1 on the end 22cp side in the second direction D2 and the portion of the second internal electrode layer 22b of the second group G2 on the end 22bp side in the second direction D2 is more likely to be shielded by the portion of the fourth internal electrode layer 22d on the end 22dp side in the second direction D2. Therefore, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22c and the second internal electrode layer 22b is less likely to flow into the substrate 10.

[0171] As described above, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. Therefore, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, power loss is less likely to occur in the substrate 10, and as a result, the Q value of the passive electronic component 2A is less likely to decrease.

[0172] In the passive electronic component 2A, it is sufficient that the second characteristic is satisfied when N is at least one even number greater than or equal to 4. It is particularly preferable that the second characteristic is satisfied when N is all even numbers greater than or equal to 4.

[0173] When the passive electronic component 2A has the moisture-resistant protective layer 40 and the resin protective layer 50, the passive electronic component 2A has the second feature, so that when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate not only into the substrate 10 but also into the moisture-resistant protective layer 40 and the resin protective layer 50. For example, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the portion of the third internal electrode layer 22c of the first group G1 on the side of the end 22cp in the second direction D2 and the portion of the second internal electrode layer 22b of the second group G2 on the side of the end 22bp in the second direction D2 is more likely to be shielded by the portion of the fourth internal electrode layer 22d on the side of the end 22dp in the second direction D2. Therefore, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22c and the second internal electrode layer 22b is less likely to penetrate into the moisture-resistant protective layer 40 and the resin protective layer 50.

[0174] As described above, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the passive electronic component 2A, when a voltage is applied to the capacitance forming portion 21, deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, power loss due to the dielectric loss tangent in the resin protective layer 50 is suppressed.

[0175] In the passive electronic component 2A, compared to the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, an electric field generated between a portion of the first internal electrode layer 22a on the end 22ap side in the second direction D2 and a portion of the second internal electrode layer 22b on the end 22bp side in the second direction D2 may penetrate to some extent into the moisture-resistant protective layer 40 and the resin protective layer 50. In addition, in the passive electronic component 2A, compared to the passive electronic component 1A, when a voltage is applied to the capacitance forming portion 21, an electric field generated between a portion of the fifth internal electrode layer 22e on the end 22ep side in the second direction D2 and a portion of the fourth internal electrode layer 22d on the end 22dp side in the second direction D2 may penetrate to some extent into the moisture-resistant protective layer 40 and the resin protective layer 50. Thus, although the passive electronic component 2A may be less effective than the passive electronic component 1A, it can still achieve some effect.

[0176] The passive electronic component 2A is manufactured in the same manner as the passive electronic component 1A, except that, for example, the arrangement of the internal electrode layers is changed.

[0177] 26, 27, and 28 illustrate the case where the capacitance forming portion has five internal electrode layers, but the capacitance forming portion may have four or more internal electrode layers. In other words, in the second embodiment of the passive electronic component of the present invention, the number of internal electrode layers included in the capacitance forming portion is not limited to the five layers described above, as long as it is four or more. The following describes the case where the capacitance forming portion has four internal electrode layers.

[0178] Fig. 29 is a plan view schematically illustrating another example of a passive electronic component according to Embodiment 2 of the present invention. Fig. 30 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in Fig. 29 taken along line segment d3-d4 (excluding the first external electrode).

[0179] 29 and 30 , the capacitance forming portion 21 is formed by laminating a first internal electrode layer 22 a, a first dielectric layer 23 a, a second internal electrode layer 22 b, a second dielectric layer 23 b, a third internal electrode layer 22 c, a third dielectric layer 23 c, and a fourth internal electrode layer 22 d in this order from the substrate 10 side in the first direction D1. That is, in the passive electronic component 2B, the capacitance forming portion 21 has four internal electrode layers.

[0180] In the passive electronic component 2B, the capacitance forming portion 21 is provided in a substantially central region in the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1.

[0181] FIG. 31 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 29 taken along line d3-d4 (excluding the first external electrode).

[0182] 31 , when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, an N-2-th internal electrode layer is determined to be located in the N-2th position and belong to the second group G2, where N is an even number of 4 or more. Specifically, in the example shown in FIG. 31 , when N is an even number of 4 or more, the combination of the N-th internal electrode layer and the N-2-th internal electrode layer corresponds to the combination of the fourth internal electrode layer 22d and the second internal electrode layer 22b (when N=4).

[0183] In the example shown in Figure 31, in a cross section along the first direction D1 and the second direction D2, the Nth internal electrode layer and the N-2th internal electrode layer of the second group G2 are connected to each other at both end sides in the second direction D2. Specifically, in the example shown in Figure 31, a portion of the fourth internal electrode layer 22d of the second group G2 on one end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b of the second group G2 on one end 22bp side in the second direction D2 are connected to each other. Also, in the example shown in Figure 31, a portion of the fourth internal electrode layer 22d of the second group G2 on the other end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b of the second group G2 on the other end 22bp side in the second direction D2 are connected to each other.

[0184] 31 , unlike the example shown in Fig. 30 , the second dielectric layer 23b and the third dielectric layer 23c are not provided between a portion of the fourth internal electrode layer 22d on one end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b on one end 22bp side in the second direction D2. Also, in the example shown in Fig. 31 , unlike the example shown in Fig. 30 , the second dielectric layer 23b and the third dielectric layer 23c are not provided between a portion of the fourth internal electrode layer 22d on the other end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b on the other end 22bp side in the second direction D2.

[0185] 31 in which the fourth internal electrode layer 22 d and the second internal electrode layer 22 b are connected to each other at both end portions in the second direction D2, for example, compared to the example shown in Fig. 30 in which the fourth internal electrode layer 22 d and the second internal electrode layer 22 b are not connected to each other at both end portions in the second direction D2, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the portion of the third internal electrode layer 22 c on the end 22 cp side in the second direction D2 and the portion of the second internal electrode layer 22 b on the end 22 bp side in the second direction D2 is more likely to be shielded by the portion of the fourth internal electrode layer 22 d on the end 22 dp side in the second direction D2. Therefore, in the example shown in Fig. 31 in which the fourth internal electrode layer 22 c and the second internal electrode layer 22 b are connected to each other at both end portions in the second direction D2, compared to the example shown in Fig. 30 in which the fourth internal electrode layer 22 c and the second internal electrode layer 22 b are not connected to each other at both end portions in the second direction D2, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22 c and the second internal electrode layer 22 b is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Figure 31, when a voltage is applied to the capacitance forming portion 21, the deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, the power loss due to the dielectric tangent in the resin protective layer 50 is suppressed, compared to the example shown in Figure 30.

[0186] Fig. 32 is a plan view schematically illustrating yet another example of the passive electronic component according to Embodiment 2 of the present invention. Fig. 33 is a cross-sectional view schematically illustrating an example of a cross section of the passive electronic component shown in Fig. 32 taken along line segment d5-d6 (excluding the first external electrode).

[0187] In the passive electronic component 2C shown in FIGS. 32 and 33, the capacitance forming portion 21 also has four internal electrode layers, similar to the passive electronic component 2B.

[0188] In the passive electronic component 2C, the capacitance forming portion 21 is provided over substantially the entire area (excluding the area overlapping with the first external electrode 25 a and the second external electrode 25 b) in the second direction D2 and the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1. In the passive electronic component 2C, the area of ​​the internal electrode layer in the capacitance forming portion 21 is larger when the capacitor 20 is viewed in plan from the first direction D1, compared to the passive electronic component 2B, and therefore the electrostatic capacitance of the capacitance forming portion 21 is larger.

[0189] In the passive electronic component 2C, unlike the passive electronic component 2B, the peripheries of all the internal electrode layers of the second group G2 are located inside the periphery of the first internal electrode layer 22a of the first group G1, which is located closest to the substrate 10, in a plan view from the first direction D1. Specifically, in the passive electronic component 2C, the peripheries of the second internal electrode layer 22b and the fourth internal electrode layer 22d of the second group G2 are both located inside the periphery of the first internal electrode layer 22a in a plan view from the first direction D1. As a result, in the passive electronic component 2C, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. Therefore, in the passive electronic component 2C, when a voltage is applied to the capacitance forming portion 21, power loss in the substrate 10 is less likely to occur, and as a result, the Q value of the passive electronic component 2C is less likely to decrease.

[0190] In the passive electronic component 2C, in a plan view from the first direction D1, the peripheries of the internal electrode layers in the first group G1 except for the first internal electrode layer 22 a are located inside the periphery of the first internal electrode layer 22 a. In the example shown in Fig. 32, the periphery of the third internal electrode layer 22 c of the first group G1 is located inside the periphery of the first internal electrode layer 22 a.

[0191] In the passive electronic component 2C, in a plan view from the first direction D1, the periphery of the Nth internal electrode layer of the second group G2 is located outside the periphery of the (N-1)th internal electrode layer of the first group G1, where N is an even number greater than or equal to 4. In the example shown in Fig. 32, the periphery of the fourth internal electrode layer 22d of the second group G2 is located outside the periphery of the third internal electrode layer 22c of the first group G1.

[0192] Therefore, in a cross section (e.g., FIG. 33 ) along the first direction D1 and the second direction D2 for the passive electronic component 2C, when N is an even number greater than or equal to 4, both end portions in the second direction D2 of the N-1th internal electrode layer of the second group G2 are located outward in the second direction D2 from both end portions in the second direction D2 of the N-1th internal electrode layer of the first group G1. Furthermore, in a cross section (e.g., FIG. 33 ) along the first direction D1 and the third direction D3 for the passive electronic component 2C, when N is an even number greater than or equal to 4, both end portions in the third direction D3 of the N-1th internal electrode layer of the first group G1 are located outward in the third direction D3 from both end portions in the third direction D3 of the N-1th internal electrode layer of the first group G1.

[0193] FIG. 34 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 32 taken along line d5-d6 (excluding the first external electrode).

[0194] 31 , in the cross section along the first direction D1 and the second direction D2, the Nth internal electrode layer and the N-2th internal electrode layer of the second group G2 are connected to each other at both end sides in the second direction D2. Specifically, in the example shown in FIG. 34 , a portion of the fourth internal electrode layer 22d of the second group G2 on one end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b of the second group G2 on one end 22bp side in the second direction D2 are connected to each other. Also, in the example shown in FIG. 34 , a portion of the fourth internal electrode layer 22d of the second group G2 on the other end 22dp side in the second direction D2 and a portion of the second internal electrode layer 22b of the second group G2 on the other end 22bp side in the second direction D2 are connected to each other.

[0195] 34 in which the fourth internal electrode layer 22 d and the second internal electrode layer 22 b are connected to each other at both end sides in the second direction D2, compared to the example shown in Fig. 33 in which the fourth internal electrode layer 22 d and the second internal electrode layer 22 b are not connected to each other at both end sides in the second direction D2, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22 c and the second internal electrode layer 22 b is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Fig. 34, when a voltage is applied to the capacitance forming portion 21, a deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed compared to the example shown in Fig. 33, and further, power loss due to the dielectric tangent in the resin protective layer 50 is suppressed.

[0196] [Embodiment 3] In a third aspect, a passive electronic component of the present invention comprises a substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance-forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance-forming portion having three or more internal electrode layers, and when all the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong are defined, and in a plan view from the first direction, the peripheries of all the internal electrode layers of the second group are located more inward than the periphery of a first internal electrode layer of the first group that is located closest to the substrate.

[0197] Hereinafter, an example of the third aspect of the passive electronic component of the present invention will be described as a passive electronic component of embodiment 3 of the present invention.

[0198] Fig. 35 is a plan view schematic diagram showing an example of a passive electronic component according to embodiment 3 of the present invention. Fig. 36 is a cross-sectional view schematic diagram showing an example of a cross-section along line segment e1-e2 of the passive electronic component shown in Fig. 35. Fig. 37 is a cross-sectional view schematic diagram showing an example of a cross-section along line segment f1-f2 of the passive electronic component shown in Fig. 35 (excluding the first external electrode).

[0199] A passive electronic component 3A shown in FIGS. 35, 36, and 37 is similar to the passive electronic component 1A (see FIGS. 1, 2, and 3) except for the following configuration.

[0200] For the passive electronic component 3A, when all the internal electrode layers are counted in order from the substrate 10 side in the first direction D1, a first group G1 is defined to which the odd-numbered internal electrode layers belong, and a second group G2 is defined to which the even-numbered internal electrode layers belong.

[0201] 35, 36, and 37, the first group G1 includes the first internal electrode layer 22a, the third internal electrode layer 22c, and the fifth internal electrode layer 22e. In the examples shown in Fig. 35, 36, and 37, the second group G2 includes the second internal electrode layer 22b and the fourth internal electrode layer 22d.

[0202] In the passive electronic component 3A, in plan view from the first direction D1, the peripheries of all the internal electrode layers of the second group G2 are located inside the periphery of the first internal electrode layer 22 a of the first group G1 that is located closest to the substrate 10. Hereinafter, this feature will be referred to as the third feature.

[0203] The third feature is as follows in FIG. 35, which shows the passive electronic component 3A in a plan view from the first direction D1.

[0204] In the example shown in FIG. 35, the peripheries of the second internal electrode layer 22b and the fourth internal electrode layer 22d of the second group G2 are both located inside the periphery of the first internal electrode layer 22a.

[0205] In the passive electronic component 3A, because the third feature is established, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. For example, in the passive electronic component 3A, when a voltage is applied to the capacitance forming portion 21, the electric field generated particularly between the portion on the end 22ap side in the second direction D2 of the first internal electrode layer 22a located closest to the substrate 10 in the first group G1 and the portion on the end 22bp side in the second direction D2 of the second internal electrode layer 22b located closest to the substrate 10 in the second group G2 is less likely to sneak around into the substrate 10.

[0206] As described above, in the passive electronic component 3A, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the internal electrode layers of the first group G1 and the internal electrode layers of the second group G2 is less likely to penetrate into the substrate 10. Therefore, in the passive electronic component 3A, when a voltage is applied to the capacitance forming portion 21, power loss is less likely to occur in the substrate 10, and as a result, the Q value of the passive electronic component 1C is less likely to decrease.

[0207] In the passive electronic component 3A, in a plan view from the first direction D1, the peripheries of the internal electrode layers in the first group G1 except for the first internal electrode layer 22 a are located inside the periphery of the first internal electrode layer 22 a. In the example shown in Fig. 35, the periphery of the third internal electrode layer 22 c of the first group G1 is located inside the periphery of the first internal electrode layer 22 a.

[0208] The passive electronic component 3A is manufactured in the same manner as the passive electronic component 1A, except that, for example, the arrangement of the internal electrode layers is changed.

[0209] 35, 36, and 37 illustrate the case where the capacitance forming portion has five internal electrode layers, but the capacitance forming portion may have three or more internal electrode layers. In other words, in the third embodiment of the passive electronic component of the present invention, the number of internal electrode layers included in the capacitance forming portion is not limited to the five layers described above, as long as it is three or more. Below, an example is shown where the capacitance forming portion has four internal electrode layers.

[0210] Fig. 38 is a plan view schematic diagram showing another example of a passive electronic component according to Embodiment 3 of the present invention. Fig. 39 is a cross-sectional view schematic diagram showing an example of a cross-section along line segment e3-e4 of the passive electronic component shown in Fig. 38. Fig. 40 is a cross-sectional view schematic diagram showing an example of a cross-section along line segment f3-f4 of the passive electronic component shown in Fig. 38 (excluding the first external electrode).

[0211] 38, 39, and 40, the capacitance forming portion 21 is formed by laminating a first internal electrode layer 22a, a first dielectric layer 23a, a second internal electrode layer 22b, a second dielectric layer 23b, a third internal electrode layer 22c, a third dielectric layer 23c, and a fourth internal electrode layer 22d in this order from the substrate 10 side in the first direction D1. That is, in the passive electronic component 3B, the capacitance forming portion 21 has four internal electrode layers.

[0212] In the passive electronic component 3B, the capacitance forming portion 21 is provided in a substantially central region in the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1.

[0213] FIG. 41 is a schematic cross-sectional view showing another example of a cross section of the passive electronic component shown in FIG. 38 taken along line f3-f4 (excluding the first external electrode).

[0214] In the example shown in Fig. 41, at least one internal electrode layer of the first group G1 is provided with a protruding portion that protrudes in the first direction D1 from both end portions in the second direction D2. Furthermore, in the example shown in Fig. 41, the protruding portion contains the same material as the internal electrode layer of the second group G2 that is adjacent to the internal electrode layer of the first group G1 on the side opposite to the substrate 10. Specifically, this is as follows.

[0215] 41, the first internal electrode layer 22a is provided with protrusions 22as that protrude in the first direction D1 from portions on both end portions 22ap sides in the second direction D2. Furthermore, in the example shown in Fig. 41, the protrusions 22as of the first internal electrode layer 22a contain the same material as the second internal electrode layer 22b that is adjacent to the first internal electrode layer 22a on the side opposite to the substrate 10.

[0216] In the example shown in Figure 41, when a voltage is applied to the capacitance forming portion 21, the protrusion 22as of the first internal electrode layer 22a functions like an antenna with respect to the electric field generated between the portion of the first internal electrode layer 22a on the end 22ap side in the second direction D2 and the portion of the second internal electrode layer 22b on the end 22bp side in the second direction D2.

[0217] 41 in which the protrusions 22as are provided on the first internal electrode layers 22a, the electric field generated between the first internal electrode layers 22a and the second internal electrode layers 22b is less likely to penetrate into the substrate 10 when a voltage is applied to the capacitance forming portion 21, as compared with the example shown in Fig. 40 in which the protrusions 22as are not provided on the first internal electrode layers 22a. Therefore, in the example shown in Fig. 41, power loss is less likely to occur in the substrate 10 when a voltage is applied to the capacitance forming portion 21, as compared with the example shown in Fig. 40, and as a result, the Q value of the passive electronic component 3B is less likely to decrease.

[0218] Furthermore, in the case where the passive electronic component 3B has the moisture-resistant protective layer 40 and the resin protective layer 50, in the example shown in Fig. 41 , compared to the example shown in Fig. 40 , when a voltage is applied to the capacitance forming portion 21, the electric field generated between the first internal electrode layer 22 a and the second internal electrode layer 22 b is less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Fig. 41 , when a voltage is applied to the capacitance forming portion 21, deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, power loss due to the dielectric loss tangent in the resin protective layer 50 is suppressed, compared to the example shown in Fig. 40 .

[0219] The protruding portions 22as of the first internal electrode layers 22a contain the same material as the second internal electrode layers 22b, and therefore can be formed at the same time as the second internal electrode layers 22b.

[0220] 41, the third internal electrode layer 22c is provided with protruding portions 22cs that protrude in the first direction D1 from portions on both end portions 22cp sides in the second direction D2. Furthermore, in the example shown in Fig. 41, the protruding portions 22cs of the third internal electrode layer 22c contain the same material as the fourth internal electrode layer 22d that is adjacent to the third internal electrode layer 22c on the side opposite to the substrate 10.

[0221] 41 , when a voltage is applied to the capacitance forming portion 21, the protrusion 22cs of the third internal electrode layer 22c functions like an antenna with respect to an electric field generated between a portion of the third internal electrode layer 22c on the end 22cp side in the second direction D2 and a portion of the second internal electrode layer 22b on the end 22bp side in the second direction D2. Also, in the example shown in FIG. 41 , when a voltage is applied to the capacitance forming portion 21, the protrusion 22cs of the third internal electrode layer 22c functions like an antenna with respect to an electric field generated between a portion of the third internal electrode layer 22c on the end 22cp side in the second direction D2 and a portion of the fourth internal electrode layer 22d on the end 22dp side in the second direction D2.

[0222] 41 in which the third internal electrode layer 22c is provided with the protrusion 22cs, for example, compared to the example shown in Fig. 40 in which the third internal electrode layer 22c is not provided with the protrusion 22cs, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22c and the second internal electrode layer 22b and the electric field generated between the third internal electrode layer 22c and the fourth internal electrode layer 22d are less likely to penetrate into the substrate 10. Therefore, in the example shown in Fig. 41 in which the third internal electrode layer 22c is provided with the protrusion 22cs, compared to the example shown in Fig. 40 in which the third internal electrode layer 22c is not provided with the protrusion 22cs, when a voltage is applied to the capacitance forming portion 21, power loss is less likely to occur in the substrate 10, and as a result, the Q value of the passive electronic component 3B is less likely to decrease.

[0223] Furthermore, in the case where the passive electronic component 3B has the moisture-resistant protective layer 40 and the resin protective layer 50, in the example shown in Fig. 41 , compared to the example shown in Fig. 40 , when a voltage is applied to the capacitance forming portion 21, the electric field generated between the third internal electrode layer 22 c and the second internal electrode layer 22 b and the electric field generated between the third internal electrode layer 22 c and the fourth internal electrode layer 22 d are less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Fig. 41 , when a voltage is applied to the capacitance forming portion 21, a deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, power loss due to the dielectric loss tangent in the resin protective layer 50 is suppressed, compared to the example shown in Fig. 40 .

[0224] The protruding portion 22cs of the third internal electrode layer 22c contains the same material as the fourth internal electrode layer 22d, and therefore can be formed at the same time as the fourth internal electrode layer 22d.

[0225] As long as the internal electrode layers of the second group G2 adjacent to the internal electrode layers of the first group G1 on the opposite side of the substrate 10 are provided, all of the internal electrode layers of the first group G1 (in the example shown in FIG. 41, the first internal electrode layers 22 a and the third internal electrode layers 22 c) may be provided with protrusions, or some of the internal electrode layers of the first group G1 (in the example shown in FIG. 41, one of the first internal electrode layers 22 a and the third internal electrode layers 22 c) may be provided with protrusions. Among these, it is preferable that all of the internal electrode layers of the first group G1 be provided with protrusions.

[0226] In the example shown in Fig. 41, at least one internal electrode layer of the second group G2 is provided with a protruding portion that protrudes in the first direction D1 from both end portions in the second direction D2. Furthermore, in the example shown in Fig. 41, the protruding portion contains the same material as the internal electrode layer of the first group G1 that is adjacent to the internal electrode layer of the second group G2 on the side opposite to the substrate 10. Specifically, this is as follows.

[0227] 41, the second internal electrode layer 22b is provided with protrusions 22bs that protrude in the first direction D1 from portions on both end portions 22bp sides in the second direction D2. Furthermore, in the example shown in Fig. 41, the protrusions 22bs of the second internal electrode layer 22b contain the same material as the third internal electrode layer 22c that is adjacent to the second internal electrode layer 22b on the side opposite to the substrate 10.

[0228] 41 , when a voltage is applied to the capacitance forming portion 21, the protrusion 22bs of the second internal electrode layer 22b functions like an antenna with respect to an electric field generated between a portion of the second internal electrode layer 22b on the end 22bp side in the second direction D2 and a portion of the first internal electrode layer 22a on the end 22ap side in the second direction D2. Also, in the example shown in FIG. 41 , when a voltage is applied to the capacitance forming portion 21, the protrusion 22bs of the second internal electrode layer 22b functions like an antenna with respect to an electric field generated between a portion of the second internal electrode layer 22b on the end 22bp side in the second direction D2 and a portion of the third internal electrode layer 22c on the end 22cp side in the second direction D2.

[0229] 41 in which the second internal electrode layer 22b has the protrusion 22bs, compared to the example shown in Fig. 40 in which the second internal electrode layer 22b has no protrusion 22bs, when a voltage is applied to the capacitance forming portion 21, the electric field generated between the second internal electrode layer 22b and the first internal electrode layer 22a and the electric field generated between the second internal electrode layer 22b and the third internal electrode layer 22c are less likely to penetrate into the substrate 10. Therefore, in the example shown in Fig. 41 in which the second internal electrode layer 22b has the protrusion 22bs, compared to the example shown in Fig. 40 in which the second internal electrode layer 22b has no protrusion 22bs, when a voltage is applied to the capacitance forming portion 21, power loss is less likely to occur in the substrate 10, and as a result, the Q value of the passive electronic component 3B is less likely to decrease.

[0230] Furthermore, in the case where the passive electronic component 3B has the moisture-resistant protective layer 40 and the resin protective layer 50, in the example shown in Fig. 41 , compared to the example shown in Fig. 40 , when a voltage is applied to the capacitance forming portion 21, the electric field generated between the second internal electrode layer 22 b and the first internal electrode layer 22 a and the electric field generated between the second internal electrode layer 22 b and the third internal electrode layer 22 c are less likely to penetrate the moisture-resistant protective layer 40 and the resin protective layer 50. Therefore, in the example shown in Fig. 41 , when a voltage is applied to the capacitance forming portion 21, a deviation in the electrostatic capacitance of the capacitance forming portion 21 is suppressed, and further, power loss due to the dielectric loss tangent in the resin protective layer 50 is suppressed, compared to the example shown in Fig. 40 .

[0231] The protruding portion 22bs of the second internal electrode layer 22b contains the same material as the third internal electrode layer 22c, and therefore can be formed at the same time as the third internal electrode layer 22c.

[0232] As long as the internal electrode layers of the first group G1 are provided adjacent to the internal electrode layers of the second group G2 on the opposite side of the substrate 10, all of the internal electrode layers of the second group G2 may be provided with protrusions, or some of the internal electrode layers of the second group G2 may be provided with protrusions. Of these, it is preferable that all of the internal electrode layers of the second group G2 be provided with protrusions.

[0233] Fig. 42 is a plan view schematic diagram showing yet another example of the passive electronic component according to Embodiment 3 of the present invention. Fig. 43 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in Fig. 42 taken along line segment e5-e6. Fig. 44 is a cross-sectional view schematic diagram showing an example of a cross section of the passive electronic component shown in Fig. 42 taken along line segment f5-f6 (excluding the first external electrode).

[0234] In the passive electronic component 3C shown in FIGS. 42, 43, and 44, the capacitance forming portion 21 also has four internal electrode layers, similar to the passive electronic component 3B.

[0235] In the passive electronic component 3C, the capacitance forming portion 21 is provided over substantially the entire area (excluding the area overlapping with the first external electrode 25 a and the second external electrode 25 b) in the second direction D2 and the third direction D3 when the capacitor 20 is viewed in plan from the first direction D1. In the passive electronic component 3C, the area of ​​the internal electrode layer in the capacitance forming portion 21 is larger when the capacitor 20 is viewed in plan from the first direction D1, compared to the passive electronic component 3B, and therefore the electrostatic capacitance of the capacitance forming portion 21 is larger.

[0236] FIG. 45 is a cross-sectional schematic diagram showing another example of a cross section of the passive electronic component shown in FIG. 42 taken along line f5-f6 (excluding the first external electrode).

[0237] In the example shown in Fig. 45, as in the example shown in Fig. 41, at least one internal electrode layer of the first group G1 is provided with a protruding portion that protrudes in the first direction D1 from both end portions in the second direction D2. Furthermore, in the example shown in Fig. 45, as in the example shown in Fig. 41, the protruding portion contains the same material as the internal electrode layer of the second group G2 that is adjacent to the internal electrode layer of the first group G1 on the side opposite to the substrate 10.

[0238] In the example shown in Fig. 45, as in the example shown in Fig. 41, at least one internal electrode layer of the second group G2 is provided with a protruding portion that protrudes in the first direction D1 from both end portions in the second direction D2. Furthermore, in the example shown in Fig. 45, as in the example shown in Fig. 41, the protruding portion contains the same material as the internal electrode layer of the first group G1 that is adjacent to the internal electrode layer of the second group G2 on the side opposite to the substrate 10.

[0239] 41 and 45 illustrate the case where a protrusion is provided on the internal electrode layer in the third embodiment of the passive electronic component of the present invention, but a protrusion may be provided on the internal electrode layer in the first embodiment of the passive electronic component of the present invention, or a protrusion may be provided on the internal electrode layer in the second embodiment of the passive electronic component of the present invention.

[0240] The present specification discloses the following:

[0241] <1> A substrate having a first main surface and a second main surface opposing each other in a first direction, and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having three or more internal electrode layers, wherein when all the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong, wherein when all the internal electrode layers are counted in order from the substrate side in the first direction, an N-th internal electrode layer located Nth and belonging to the first group and an N-1-th internal electrode layer located N-1th and belonging to the second group, where N is an odd number of 3 or more, and wherein a second direction perpendicular to an average direction of a current flowing in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined, In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the first group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the second group in the second direction.

[0242] <2> The passive electronic component according to <1>, wherein, in the cross section, the Nth internal electrode layer of the first group covers, in the second direction, at least a part of each side surface of the N-1th internal electrode layer of the second group on both end sides in the second direction.

[0243] <3> The passive electronic component according to <1> or <2>, wherein, when all the internal electrode layers are counted in order from the substrate side in the first direction, an N-2-th internal electrode layer is defined as being located N-2th and belonging to the first group, where N is an odd number of 3 or more, and in the cross section, the N-th internal electrode layer and the N-2-th internal electrode layer of the first group are connected to each other at both end sides in the second direction.

[0244] <4> A semiconductor device comprising: a substrate having a first main surface and a second main surface opposing each other in a first direction; and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having four or more internal electrode layers, wherein, when all the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong, wherein, when all the internal electrode layers are counted in order from the substrate side in the first direction, an N-th internal electrode layer located Nth and belonging to the second group and an N-1-th internal electrode layer located N-1th and belonging to the first group, where N is an even number of 4 or more, and wherein a second direction perpendicular to an average direction of a current flowing in the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction is defined. In a cross section along the first direction and the second direction, both ends of the Nth internal electrode layer of the second group in the second direction are located outward in the second direction than both ends of the N-1th internal electrode layer of the first group in the second direction.

[0245] <5> In the cross section, the Nth internal electrode layer of the second group covers, in the second direction, at least a part of each side surface of the N-1th internal electrode layer of the first group on both end sides in the second direction. A passive electronic component according to <4>.

[0246] <6> The passive electronic component according to <4> or <5>, wherein, when all the internal electrode layers are counted in order from the substrate side in the first direction, an N-2th internal electrode layer is defined as being located N-2th and belonging to the second group, where N is an even number of 4 or more, and in the cross section, the Nth internal electrode layer and the N-2th internal electrode layer of the second group are connected to each other at both end sides in the second direction.

[0247] <7> A passive electronic component comprising: a substrate having a first main surface and a second main surface opposing each other in a first direction; and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having three or more internal electrode layers, wherein, when all the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong are defined, and in a plan view from the first direction, peripheral edges of all the internal electrode layers of the second group are located more inward than a peripheral edge of a first internal electrode layer of the first group that is located closest to the substrate.

[0248] <8> A passive electronic component according to any one of <1> to <7>, wherein, when a second direction perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion is defined in a plan view from the first direction, at least one of the internal electrode layers of the first group is provided with a protrusion that protrudes in the first direction from portions on both end sides in the second direction, and the protrusion contains the same material as the internal electrode layer of the second group that is adjacent to the internal electrode layer of the first group on the side opposite to the substrate in which the protrusion is provided.

[0249] <9> A passive electronic component according to any one of <1> to <8>, wherein, when a second direction perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion is defined in a plan view from the first direction, at least one of the internal electrode layers of the second group is provided with a protrusion that protrudes in the first direction from portions on both end sides in the second direction, and the protrusion contains the same material as the internal electrode layer of the first group that is adjacent to the internal electrode layer of the second group on the side opposite to the substrate in which the protrusion is provided.

[0250] <10> The passive electronic component according to any one of <1> to <9>, wherein the capacitor further comprises a first external electrode electrically connected to all of the internal electrode layers of the first group.

[0251] <11> The passive electronic component according to any one of <1> to <10>, wherein the capacitor further comprises a second external electrode electrically connected to all of the internal electrode layers of the second group.

[0252] <12> The passive electronic component according to any one of <1> to <11>, further comprising an insulating layer provided between the substrate and the capacitor in the first direction.

[0253] <13> The passive electronic component according to any one of <1> to <12>, further comprising a moisture-resistant protective layer covering the capacitance forming portion.

[0254] <14> The passive electronic component according to any one of <1> to <13>, further comprising a resin protective layer that covers the substrate and the capacitance forming portion.

[0255] 1A, 1B, 1C, 2A, 2B, 2C, 3A, 3B, 3C Passive electronic component 10 Substrate 10a First main surface of substrate 10b Second main surface of substrate 20 Capacitor 21 Capacitance forming portion 22a First internal electrode layer 22ap End of first internal electrode layer in second direction 22as Protrusion of first internal electrode layer 22b Second internal electrode layer 22bp End of second internal electrode layer in second direction 22bs Protrusion of second internal electrode layer 22c Third internal electrode layer 22cp End of third internal electrode layer in second direction 22cs Protrusion of third internal electrode layer 22d Fourth internal electrode layer 22dp End of fourth internal electrode layer in second direction 22e Fifth internal electrode layer 22ep End of fifth internal electrode layer in second direction 23a First dielectric layer 23b Second dielectric layer 23c Third dielectric layer 23d Fourth dielectric layer 25a First external electrode 25b Second external electrode 26, 26aa, 26ba Seed layer 27aa, 27ba First plating layer 27ab, 27bb Second plating layer 30 Insulating layer 40 Moisture-resistant protective layer 50 Resin protective layer 23ah, 23bha, 23bhb, 23cha, 23chb, 23dha, 23dhb, 40ha, 40hb, 50ha, 50hb, 60ha, 60hb Through hole D1 First direction D2 Second direction D3 Third direction G1 First group G2 Second group

Claims

1. A semiconductor device comprising: a substrate having a first main surface and a second main surface opposed to each other in a first direction; and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by alternately stacking internal electrode layers and dielectric layers in the first direction, the capacitance forming portion having three or more internal electrode layers, wherein, when all of the internal electrode layers are counted in sequence from the substrate side in the first direction, a first group to which the internal electrode layers positioned odd-numbered belong and a second group to which the internal electrode layers positioned even-numbered belong, wherein, when all of the internal electrode layers are counted in sequence from the substrate side in the first direction, an Nth internal electrode layer which is positioned Nth and belongs to the first group, and an N-1th internal electrode layer which is positioned N-1th and belongs to the second group, where N is an odd number of 3 or more, and wherein a second direction is defined which is perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction, A passive electronic component, characterized in that, in a cross section along the first direction and the second direction, both end portions in the second direction of the Nth internal electrode layer of the first group are positioned outer in the second direction than both end portions in the second direction of the N-1th internal electrode layer of the second group.

2. A passive electronic component as described in claim 1, wherein, in the cross section, the Nth internal electrode layer of the first group covers, in the second direction, at least a portion of each side surface of both end sides in the second direction of the N-1th internal electrode layer of the second group.

3. A passive electronic component as described in claim 1 or 2, wherein when all of the internal electrode layers are counted in order from the substrate side in the first direction, an N-2 internal electrode layer is defined as being located N-2th and belonging to the first group, where N is an odd number of 3 or more, and in the cross section, the N internal electrode layer and the N-2 internal electrode layer of the first group are connected to each other at both end sides in the second direction.

4. A semiconductor device comprising: a substrate having a first main surface and a second main surface opposed to each other in a first direction; and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by alternately stacking internal electrode layers and dielectric layers in the first direction, the capacitance forming portion having four or more internal electrode layers, wherein, when all of the internal electrode layers are counted in sequence from the substrate side in the first direction, a first group to which the internal electrode layers positioned in odd positions belong and a second group to which the internal electrode layers positioned in even positions belong, wherein, when all of the internal electrode layers are counted in sequence from the substrate side in the first direction, an Nth internal electrode layer positioned in Nth position and belonging to the second group, and an N-1th internal electrode layer positioned in N-1th position and belonging to the first group, where N is an even number of four or more, are defined, and a second direction is defined which is perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion in a plan view from the first direction, a second internal electrode layer of the second group having a first internal electrode layer and a second internal electrode layer of the second group having a second internal electrode layer, the second internal electrode layer being disposed on the outer side in the second direction than the first internal electrode layer and the second internal electrode layer of the first group.

5. A passive electronic component as described in claim 4, wherein, in the cross section, the Nth internal electrode layer of the second group covers, in the second direction, at least a portion of each side surface of the N-1th internal electrode layer of the first group at both end sides in the second direction.

6. A passive electronic component as described in claim 4 or 5, wherein when all of the internal electrode layers are counted in order from the substrate side in the first direction, an N-2 internal electrode layer is defined as being located N-2th and belonging to the second group, where N is an even number of 4 or more, and in the cross section, the N internal electrode layer and the N-2 internal electrode layer of the second group are connected to each other at both end sides in the second direction.

7. A passive electronic component comprising: a substrate having a first main surface and a second main surface opposing each other in a first direction; and a capacitor provided on the first main surface side of the substrate, wherein the capacitor has a capacitance forming portion formed by internal electrode layers and dielectric layers alternately stacked in the first direction, the capacitance forming portion having three or more internal electrode layers, and wherein, when all of the internal electrode layers are counted in order from the substrate side in the first direction, a first group to which the odd-numbered internal electrode layers belong and a second group to which the even-numbered internal electrode layers belong are defined, and in a plan view from the first direction, the peripheries of all of the internal electrode layers in the second group are located more inward than the periphery of a first internal electrode layer in the first group that is located closest to the substrate.

8. A passive electronic component as claimed in any one of claims 1 to 7, wherein, when viewed in a plan view from the first direction, a second direction perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion is defined, at least one of the internal electrode layers of the first group is provided with a protrusion protruding in the first direction from portions on both end sides in the second direction, and the protrusion contains the same material as the internal electrode layer of the second group adjacent to the internal electrode layer of the first group in which the protrusion is provided, on the opposite side to the substrate.

9. A passive electronic component as claimed in any one of claims 1 to 8, wherein, when viewed in a plan view from the first direction, a second direction perpendicular to an average direction of a current flowing through the capacitance forming portion when a voltage is applied to the capacitance forming portion is defined, at least one of the internal electrode layers of the second group is provided with a protrusion protruding in the first direction from portions on both end sides in the second direction, and the protrusion contains the same material as the internal electrode layer of the first group adjacent to the internal electrode layer of the second group in which the protrusion is provided, on the opposite side to the substrate.

10. A passive electronic component according to any one of claims 1 to 9, wherein the capacitor further comprises a first external electrode electrically connected to all of the internal electrode layers of the first group.

11. A passive electronic component according to any one of claims 1 to 10, wherein the capacitor further comprises a second external electrode electrically connected to all of the internal electrode layers of the second group.

12. A passive electronic component according to any one of claims 1 to 11, further comprising an insulating layer provided between the substrate and the capacitor in the first direction.

13. A passive electronic component according to any one of claims 1 to 12, further comprising a moisture-resistant protective layer covering said capacitance forming portion.

14. A passive electronic component according to any one of claims 1 to 13, further comprising a resin protective layer that covers the substrate and the capacitance forming portion.

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