Apparatus and method for monitoring semiconductor packaging process by using terahertz waves

Abstract

An apparatus for monitoring a semiconductor packaging process by using terahertz waves is provided. The apparatus for monitoring a semiconductor packaging process by using terahertz waves may comprise; an emitter which emits terahertz waves toward a semiconductor package; a detector which detects terahertz waves emitted from the emitter and reflected from the semiconductor package or terahertz waves penetrating the semiconductor package; and a monitoring unit which, during a packaging process for the semiconductor package, monitors a state of the semiconductor package in real time on the basis of the terahertz waves detected by the detector, wherein the state of the semiconductor package includes at least one of misalignment due to two-dimensional translation of a semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional warpage of the semiconductor package.

Description

Device and method for monitoring semiconductor packaging processes using terahertz waves

[0001] The present invention relates to a device and method for monitoring a semiconductor packaging process using terahertz waves, and more specifically, to a device and method for monitoring a semiconductor packaging process using terahertz waves, which can monitor the state of a semiconductor package in real time using terahertz waves during a semiconductor packaging process.

[0002] The epoxy molding compound (EMC) molding process, which is performed in semiconductor packaging processes, is performed at high temperatures and high pressures. This process can lead to internal chip misalignment issues and package warpage. Furthermore, in processes that involve continuous chip movement, such as die attach and redistribution layer (RDL) processes, chip alignment errors can occur, leading to persistent process defects.

[0003] These problems are even more critical in advanced semiconductor packaging processes that utilize large-area wafers, such as panel-level packaging (PLP) and wafer-level packaging (WLP). However, these process issues are limited by the fact that existing inspection technologies cannot detect them.

[0004] For example, the laser scanning inspection method has limitations in that it cannot inspect the interior of products made of transparent materials.

[0005] Additionally, ultrasonic inspection methods have limitations in inspecting electronic products because they require the product to be immersed in water, and there are resolution limitations in inspecting highly integrated products.

[0006] In addition, in the case of the X-ray inspection method, there is a limitation in that it is difficult to inspect products in real time in the high-speed semiconductor packaging process because the inspection time is long, and there is a problem that the ionizing rays generated during the inspection have a negative effect on the human body of the person measuring and the product.

[0007] The technical problem to be solved by the present invention is to provide a semiconductor packaging process monitoring device and method using terahertz waves, which can monitor the state of a semiconductor package in real time using terahertz waves during a semiconductor packaging process.

[0008] The technical problems to be solved by the present invention are not limited to those described above.

[0009] To solve the above technical problem, the present invention provides a semiconductor packaging process monitoring device using terahertz waves.

[0010] According to one embodiment, the semiconductor packaging process monitoring device using terahertz waves includes: an emitter that generates terahertz waves toward a semiconductor package; a detector that detects terahertz waves generated from the emitter and reflected from the semiconductor package or terahertz waves transmitted through the semiconductor package; and a monitoring unit that monitors a state of the semiconductor package in real time based on the terahertz waves detected by the detector during a packaging process for the semiconductor package, wherein the state of the semiconductor package may include at least one of misalignment due to two-dimensional translation of the semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional bending of the semiconductor package.

[0011] According to one embodiment, the semiconductor package is configured to have at least one detection point at which terahertz waves emitted from the emitter are detected by the detector, wherein the at least one detection point may include at least one border point set at a border of the semiconductor chip.

[0012] According to one embodiment, the monitoring unit monitors the state of the semiconductor package in real time through any one of a first monitoring mode that monitors in real time whether there is misalignment due to two-dimensional translation of the semiconductor chip; a second monitoring mode that monitors in real time whether there is misalignment due to two-dimensional rotation of the semiconductor chip; a third monitoring mode that monitors in real time whether there is deformation due to three-dimensional tilt of the semiconductor chip; and a fourth monitoring mode that monitors in real time whether there is deformation due to three-dimensional bending of the semiconductor package. When any one of the first to fourth monitoring modes is selected, the detection position and the number of detections for the at least one detection point can be automatically defined.

[0013] According to one embodiment, the border point may be set at a position where a portion of a cross-section of the terahertz wave detected by the detector overlaps with the semiconductor chip.

[0014] According to one embodiment, in the first monitoring mode, whether there is misalignment due to two-dimensional translation of the semiconductor chip is determined through an increase or decrease in the reflectivity of terahertz waves detected at the at least one detection point defined as a detection position, and the degree of two-dimensional translation of the semiconductor chip is calculated through an increase or decrease in the reflectivity of terahertz waves detected at at least three of the edge points, and in the second monitoring mode, whether there is misalignment due to two-dimensional rotation of the semiconductor chip is determined through an increase or decrease in the reflectivity of terahertz waves detected at the at least one detection point defined as a detection position, and the degree of two-dimensional rotation of the semiconductor chip can be calculated through an increase or decrease in the reflectivity of terahertz waves detected at at least two of the edge points.

[0015] According to one embodiment, when misalignment due to two-dimensional translation of the semiconductor chip is confirmed through the first monitoring mode and the degree of two-dimensional translation of the semiconductor chip is calculated, subsequent process conditions can be adjusted according to the misalignment due to two-dimensional translation of the semiconductor chip.

[0016] According to one embodiment, in the third monitoring mode, the degree of deformation due to three-dimensional tilting of the semiconductor chip is calculated through a difference in detection times of terahertz waves detected at the at least one detection point defined as a detection position, and in the fourth monitoring mode, the degree of deformation due to three-dimensional bending of the semiconductor package can be calculated through a difference in detection times of terahertz waves detected at the at least one detection point defined as a detection position.

[0017] According to one embodiment, the monitoring unit monitors the state of the semiconductor package through a scan mode and a precision mode, detects terahertz waves at a minimum detection point among the at least one detection point in the scan mode, and when an abnormality is identified in the state of the semiconductor package in the scan mode, the monitoring unit switches the scan mode to a precision mode, thereby detecting terahertz waves at more detection points than the minimum detection points in the scan mode.

[0018] According to one embodiment, the imaging unit further comprises an imaging unit capable of imaging the semiconductor package by scanning it with terahertz waves through a reflection mode.

[0019] According to one embodiment, the emitter and detector may be provided at least one, but may be provided in a corresponding number.

[0020] According to one embodiment, the terahertz wave may be provided in a pulsed type or a continuous wave.

[0021] According to one embodiment, the monitoring unit can monitor the results of the previous process and the status of the current process for the semiconductor package so that preset subsequent process conditions are adjusted through position tracking of the semiconductor chip using the terahertz wave.

[0022] Meanwhile, the present invention provides a method for monitoring a semiconductor packaging process using terahertz waves.

[0023] According to one embodiment, a method for monitoring a semiconductor packaging process using terahertz waves includes the steps of: generating terahertz waves toward a semiconductor package; detecting terahertz waves reflected from the semiconductor package or terahertz waves transmitted through the semiconductor package; and, during a packaging process for the semiconductor package, monitoring a state of the semiconductor package in real time based on the terahertz waves detected in the step of detecting the terahertz waves, wherein the state of the semiconductor package may include at least one of misalignment due to two-dimensional translation of the semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional bending of the semiconductor package.

[0024] According to one embodiment, at least one detection point at which the terahertz wave is detected is set in the semiconductor package, and the at least one detection point includes at least one border point set on the border of the semiconductor chip, and the monitoring step includes a first monitoring process for monitoring in real time whether the semiconductor chip is misaligned due to two-dimensional translation; a second monitoring process for monitoring in real time whether the semiconductor chip is misaligned due to two-dimensional rotation; a third monitoring process for monitoring in real time whether the semiconductor chip is deformed due to three-dimensional tilt; and a fourth monitoring process for monitoring in real time whether the semiconductor package is deformed due to three-dimensional bending, thereby monitoring the state of the semiconductor package in real time through any one monitoring process selected from the first monitoring process to the fourth monitoring process, wherein when any one monitoring process among the first monitoring process to the fourth monitoring process is selected, the detection position and the number of detections for the at least one detection point can be automatically defined.

[0025] According to an embodiment of the present invention, there is provided a semiconductor package comprising: an emitter that generates a terahertz wave toward a semiconductor package; a detector that detects a terahertz wave generated from the emitter and reflected from the semiconductor package or a terahertz wave that transmits the semiconductor package; and a monitoring unit that monitors a state of the semiconductor package in real time based on the terahertz wave detected by the detector during a packaging process for the semiconductor package, wherein the state of the semiconductor package may include at least one of misalignment due to two-dimensional translation of the semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional bending of the semiconductor package.

[0026] Accordingly, a semiconductor packaging process monitoring device and method using terahertz waves can be provided, which can monitor the state of a semiconductor package in real time using terahertz waves during a semiconductor packaging process.

[0027] For example, according to an embodiment of the present invention, a semiconductor packaging process monitoring device and method using terahertz waves can be provided, which have higher resolution than conventional ultrasonic inspection and faster inspection speed than X-ray inspection, enabling real-time inspection.

[0028] Through this, according to an embodiment of the present invention, in a process in which errors occur due to chip movement, such as a die attach process, a molding process, or a rewiring process during a semiconductor packaging process, misalignment of a semiconductor chip or warpage of a semiconductor package can be detected early, thereby preventing or minimizing product defects, thereby improving process yield and productivity, and in the event of excessive alignment errors, additional process costs can be reduced by excluding them from subsequent processes in advance.

[0029] That is, according to an embodiment of the present invention, a semiconductor packaging process monitoring device and method using terahertz waves can be provided that can overcome the limitations of existing non-destructive inspection techniques.

[0030] In addition, according to an embodiment of the present invention, a device and method for monitoring a semiconductor packaging process using terahertz waves, which are harmless to the human body, can be provided.

[0031] FIG. 1 is a schematic diagram illustrating a semiconductor packaging process monitoring device according to one embodiment of the present invention.

[0032] Figure 2 is a schematic diagram showing a semiconductor package in a normal state.

[0033] Figure 3 is a schematic diagram showing a semiconductor package in which semiconductor chips are misaligned.

[0034] Figures 4 and 5 are schematic diagrams showing a semiconductor package in which warpage has occurred.

[0035] FIG. 6 is a schematic diagram illustrating a reflection mode of a semiconductor packaging process monitoring device according to an embodiment of the present invention.

[0036] FIG. 7 is a schematic diagram illustrating an orthogonal reflection mode of a semiconductor packaging process monitoring device according to an embodiment of the present invention.

[0037] FIG. 8 is a schematic diagram illustrating an emitter and a detector of a semiconductor packaging process monitoring device according to an embodiment of the present invention.

[0038] FIG. 9 is a schematic diagram illustrating a detection point for detecting terahertz waves in a semiconductor packaging process monitoring device according to an embodiment of the present invention.

[0039] Figures 10 and 11 are drawings for explaining terahertz waves reflected from a semiconductor package.

[0040] FIGS. 12 to 14 are drawings for explaining the first monitoring mode and the second monitoring mode of the monitoring unit in a semiconductor packaging process monitoring device according to one embodiment of the present invention.

[0041] FIGS. 15 to 17 are drawings for explaining the third monitoring mode of the monitoring unit in a semiconductor packaging process monitoring device according to one embodiment of the present invention.

[0042] FIGS. 18 to 20 are drawings for explaining the fourth monitoring mode of the monitoring unit in a semiconductor packaging process monitoring device according to one embodiment of the present invention.

[0043] Figure 21 is a flowchart illustrating a semiconductor packaging process monitoring method according to one embodiment of the present invention.

[0044] Figures 22 to 24 are drawings showing semiconductor package specimens manufactured according to Example 1.

[0045] Figure 25 is an image obtained by scanning a semiconductor package specimen manufactured according to Example 1 using terahertz waves.

[0046] FIGS. 26 and 27 are drawings for explaining terahertz waves reflected from a semiconductor package specimen manufactured according to Example 1.

[0047] Figures 28 to 36 are drawings for explaining monitoring of normality, misalignment, tilt, and warpage of a semiconductor package specimen manufactured according to Example 1.

[0048] Figure 37 is a schematic diagram showing each detection point of the lookup table.

[0049] Figure 38 is a schematic diagram showing die shift of a semiconductor chip that occurs during a molding process during a semiconductor packaging process.

[0050] Figure 39 is a schematic diagram showing alignment errors that occur when moving semiconductor chips, such as during a die attach process or a rewiring process, during a semiconductor packaging process.

[0051] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to sufficiently convey the spirit of the present invention to those skilled in the art.

[0052] In this specification, when a component is referred to as being on another component, it means that it can be formed directly on the other component, or a third component may be interposed between them. Furthermore, in the drawings, shapes and sizes are exaggerated for the purpose of effectively explaining the technical contents.

[0053] Additionally, although terms such as first, second, and third have been used to describe various components in various embodiments of this specification, these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiments. Additionally, the term "and / or" has been used herein to mean including at least one of the components listed before and after.

[0054] In the specification, singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, terms such as "comprise" or "have" are intended to specify the presence of a feature, number, step, component, or combination thereof described in the specification, and should not be construed as excluding the presence or addition of one or more other features, numbers, steps, components, or combinations thereof. In addition, the term "connection" is used in the present specification to mean both indirectly connecting multiple components and directly connecting them.

[0055] In addition, when describing the present invention below, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0056]

[0057] FIG. 1 is a schematic diagram illustrating a semiconductor packaging process monitoring device according to an embodiment of the present invention, FIG. 2 is a schematic diagram illustrating a semiconductor package in a normal state, FIG. 3 is a schematic diagram illustrating a semiconductor package in which a semiconductor chip is misaligned, FIGS. 4 and 5 are schematic diagrams illustrating a semiconductor package in which warpage occurs, FIG. 6 is a schematic diagram illustrating a reflection mode of a semiconductor packaging process monitoring device according to an embodiment of the present invention, FIG. 7 is a schematic diagram illustrating an orthogonal reflection mode of a semiconductor packaging process monitoring device according to an embodiment of the present invention, FIG. 8 is a schematic diagram illustrating an emitter and a detector of a semiconductor packaging process monitoring device according to an embodiment of the present invention, FIG. 9 is a schematic diagram illustrating a detection point for detecting terahertz waves in a semiconductor packaging process monitoring device according to an embodiment of the present invention, FIGS. 10 and 11 are drawings for explaining terahertz waves reflected from a semiconductor package, and FIGS. 12 to 14 are diagrams illustrating 14 are drawings for explaining the first monitoring mode and the second monitoring mode of the monitoring unit in the semiconductor packaging process monitoring device according to one embodiment of the present invention, FIGS. 15 to 17 are drawings for explaining the third monitoring mode of the monitoring unit in the semiconductor packaging process monitoring device according to one embodiment of the present invention, and FIGS. 18 to 20 are drawings for explaining the fourth monitoring mode of the monitoring unit in the semiconductor packaging process monitoring device according to one embodiment of the present invention.

[0058]

[0059] As illustrated in FIG. 1, a semiconductor packaging process monitoring device (100) according to an embodiment of the present invention is a device that can monitor the state of a semiconductor package (P) in real time using terahertz waves while a semiconductor packaging process such as a die attach process, a molding process, and a re-distribution layer (RDL) process is in progress.

[0060] That is, as illustrated in FIG. 2, a semiconductor packaging process monitoring device (100) according to an embodiment of the present invention can monitor whether a semiconductor package (P) is in a normal state during a semiconductor packaging process.

[0061] In addition, as illustrated in FIG. 3, a semiconductor packaging process monitoring device (100) according to an embodiment of the present invention can monitor in real time whether a misalignment occurs in which a semiconductor chip (C) of a semiconductor package (P) is translated or rotated during a semiconductor packaging process.

[0062] And as shown in FIGS. 4 and 5, the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention can monitor in real time whether warpage has occurred in a semiconductor package (P) during a semiconductor packaging process.

[0063] In one embodiment, warpage can be monitored in real time for the entire semiconductor package, as well as for individual chips within it.

[0064] Accordingly, the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention can detect defects in the semiconductor package (P) at an early stage.

[0065] Through this, defects in the semiconductor package (P) can be prevented or minimized, thereby improving process yield and productivity.

[0066] In addition, if an excessive alignment error occurs in a semiconductor chip (C), the semiconductor chip (C) can be excluded from a subsequent process in advance, thereby saving additional process costs.

[0067] That is, the limitations of existing non-destructive inspection technology can be overcome through the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention.

[0068] In addition, the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention has the advantage of being harmless to the human body, unlike conventional X-ray inspection.

[0069] Here, a semiconductor package (P) monitored through a semiconductor packaging process monitoring device (100) according to an embodiment of the present invention may include a semiconductor chip (C) and an EMC (epoxy molding compound) layer (M).

[0070] The semiconductor chip (C) may be placed on a substrate (S). In addition, the EMC layer (M) may be placed on the substrate (S) in a form that covers the semiconductor chip (C) in order to encapsulate the semiconductor chip (C).

[0071] At this time, the substrate (S) can be removed after the EMC layer (M) is formed, and a redistribution layer (L) and a solder ball (D) can be sequentially attached in its place.

[0072] The above semiconductor chip (C) can be electrically connected to the PCB substrate through the redistribution layer (L) and solder ball (D).

[0073]

[0074] A semiconductor packaging process monitoring device (100) according to one embodiment of the present invention may include an emitter (110), a detector (120), and a monitoring unit (130) to monitor a semiconductor package (P) in real time using terahertz waves during a semiconductor packaging process.

[0075]

[0076] The above emitter (110) is a device that generates terahertz waves toward a semiconductor package (P). For this purpose, the emitter (110) may be positioned so as to face the semiconductor package (P).

[0077] At this time, the semiconductor package (P) may be in the process of any one of a die attach process, a molding process, and a rewiring process among semiconductor packaging processes.

[0078] Accordingly, the semiconductor package (P) may be in a state before the EMC layer (M) is formed, in a state in which the EMC layer (M) is formed, or in a state in which the substrate (S) is separated and a redistribution layer (L) and a solder ball (D) are attached in that place. That is, the semiconductor package (P) defined in one embodiment of the present invention may be an unfinished semiconductor package (P) that is in the process of packaging.

[0079] According to one embodiment of the present invention, the terahertz wave generated from the emitter (110) and irradiated toward the semiconductor package (P) may be provided in a pulsed type or a continuous wave.

[0080] Here, pulsed terahertz waves have the advantage of being able to detect numerous frequencies at once.

[0081] In order to generate such pulsed terahertz waves, a femtosecond laser that functions as a pump light for generating pulsed terahertz waves can be irradiated to the emitter (110).

[0082] At this time, according to one embodiment of the present invention, the frequency of the terahertz wave irradiated to the semiconductor package (P) generated from the emitter (110) may be 0.1 ㎔ to 10 ㎔.

[0083] Meanwhile, according to one embodiment of the present invention, the emitter (110) and the detector (120) may be provided to be operable in a reflection mode based on the optical path of the terahertz wave to the semiconductor package (P).

[0084] Referring to FIG. 6, for this purpose, the detector (120) may be arranged symmetrically with respect to the emitter (110) with respect to the normal direction of the semiconductor package (P). For example, when the emitter (110) is arranged to be tilted 30 degrees from the normal direction of the semiconductor package (P), the detector (120) may be arranged to be tilted -30 degrees from the normal direction of the semiconductor package (P) so as to be symmetrical thereto.

[0085] Terahertz waves generated from the emitter (110) and reflected from the surface of the semiconductor package (P), more specifically, the EMC layer (M) and the semiconductor chip (C), and then detected by the detector (120) are used to derive parameters for monitoring the state of the semiconductor package (P) in real time, which will be described in more detail below.

[0086] In addition, as illustrated in FIG. 7, an emitter (110) may be arranged in the normal direction of the semiconductor package (P), and a beam splitter (115) may be arranged between the semiconductor package (P) and the emitter (110). At this time, the detector (120) may be arranged parallel to the horizontal direction of the beam splitter (115).

[0087] In this way, the emitter (110) and the detector (120) may be provided to operate in an orthogonal reflection mode based on the optical path of the terahertz wave to the semiconductor package (P) through the beam splitter (115).

[0088] At this time, although not shown, the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention may further include an imaging unit.

[0089] The above imaging unit can image a semiconductor package (P) by scanning it with terahertz waves through a reflection mode.

[0090] Accordingly, an image (see FIG. 25) of a semiconductor package (P) generated by the imaging unit can be provided to the monitoring unit (130), and the state of the imaged semiconductor package (P) can be monitored by a manager or process monitoring agent managing the monitoring unit (130).

[0091] Meanwhile, although not shown, the emitter (110) and detector (120) may be configured to operate in a transmission mode based on the optical path of the terahertz wave to the semiconductor package (P).

[0092] For this purpose, the emitter (110) and the detector (120) may be arranged on the same line in the normal direction of the semiconductor package (P) with the semiconductor package (P) interposed therebetween.

[0093] As illustrated in FIG. 8, according to one embodiment of the present invention, the emitter (110) and the detector (120) may be provided in one or two or more quantities. In this case, when the emitter (110) and the detector (120) are provided in two or more quantities, the emitter (110) and the detector (120) may be provided in corresponding quantities to form a pair.

[0094] According to one embodiment of the present invention, at least one detection point may be set in the semiconductor package (P) at which terahertz waves emitted from the emitter (110) are detected by a detector (120).

[0095] The at least one detection point may include at least one border point set on the border of the semiconductor chip (C).

[0096] As illustrated in FIG. 9, according to one embodiment of the present invention, the border points may include a first border point (1), a second border point (2), a third border point (3), and a fourth border point (4) set at each of the four corners of the semiconductor chip (C).

[0097] At this time, the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) can be set at a position where a part of the cross-section of the terahertz wave detected by the detector (120) overlaps with the semiconductor chip (C).

[0098] For example, the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) may be set at positions where a quarter of the cross-section of the terahertz wave detected by the detector (120) overlaps with the semiconductor chip (C).

[0099] According to one embodiment of the present invention, whether the semiconductor chip (C) is misaligned is determined based on the change in the area in which a portion of the cross-section of the terahertz wave detected by the detector (120) overlaps the semiconductor chip (C), which will be described in more detail below.

[0100] Additionally, the at least one detection point may further include a center point (0) set at the center of the semiconductor chip (C).

[0101] When the above emitters (110) and detectors (120) are provided in multiple numbers, the multiple emitters (110) can simultaneously irradiate terahertz waves to, for example, the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) set at each of the four corners of the semiconductor chip (C) and the center point (0) set at the center of the semiconductor chip (C).

[0102] Additionally, multiple detectors (120) can simultaneously detect terahertz waves reflected from these detection points.

[0103] At this time, although not shown, the semiconductor packaging process monitoring device (100) according to one embodiment of the present invention may further include a focus precision adjustment unit.

[0104] The above focus precision adjustment unit may be provided in each of the emitter (110) and the detector (120). This focus precision adjustment unit can precisely move the focus of the terahertz wave by targeting a detection point matching the emitter (110) and the detector (120).

[0105]

[0106] The above monitoring unit (130) can monitor the status of the semiconductor package (P) in real time based on the terahertz waves detected by the detector (120) during the packaging process for the semiconductor package (P).

[0107] According to one embodiment of the present invention, the state of the semiconductor package (P) may include at least one of misalignment due to two-dimensional translation of the semiconductor chip (C), misalignment due to two-dimensional rotation of the semiconductor chip (C), deformation due to three-dimensional tilt of the semiconductor chip (C), and deformation due to three-dimensional bending of the semiconductor package (P).

[0108] According to one embodiment of the present invention, the monitoring unit (130) can monitor the status of the semiconductor package (P) in real time through any one of the monitoring modes selected from the first monitoring mode, the second monitoring mode, the third monitoring mode, and the fourth monitoring mode.

[0109] The above first monitoring mode, second monitoring mode, third monitoring mode and fourth monitoring mode can be selected by an administrator or a monitoring agent.

[0110] At this time, when any one of the first monitoring mode, the second monitoring mode, the third monitoring mode, and the fourth monitoring mode is selected, the detection position and the number of detections for the detection point can be automatically defined.

[0111] For example, when the first monitoring mode is selected, the number of detection points among the center point (0), the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) at which terahertz waves reflected are to be detected is automatically set, and when the number of detections is set, the number of detection points at which terahertz waves reflected are to be detected can be automatically set.

[0112] According to one embodiment of the present invention, when the first monitoring mode is selected, the monitoring unit (130) can monitor in real time whether there is misalignment due to two-dimensional translation of the semiconductor chip (C).

[0113] In the first monitoring mode, it is possible to determine whether there is misalignment due to two-dimensional translation of the semiconductor chip (C) through an increase or decrease in the reflectivity of the terahertz wave detected at at least one detection point set as a detection position.

[0114] At this time, referring to FIGS. 10 and 11, the terahertz wave irradiated on the semiconductor package (P) can be detected as a reflected wave reflected from the surface of the semiconductor package (P), more specifically, the surface of the EMC layer (M), and a reflected wave reflected from the surface of the semiconductor chip (C).

[0115] Referring to FIGS. 12 and 13, when the first monitoring mode is selected, the monitoring unit (130) can monitor whether there is misalignment due to two-dimensional translation of the semiconductor chip (C) through an increase or decrease in the reflectivity of terahertz waves detected at the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4).

[0116] When a two-dimensional translation of a semiconductor chip (C) occurs during a semiconductor packaging process, the area of ​​a portion of a cross-section of a terahertz wave that overlaps the semiconductor chip (C) at each of the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) changes according to the two-dimensional translation direction of the semiconductor chip (C) compared to the overlapping area in the normal state, and the reflectivity and amplitude of the terahertz wave may change due to this change in the overlapping area.

[0117] The above monitoring unit (130) can monitor whether there is misalignment due to two-dimensional translation of the semiconductor chip (C) by calculating the reflectivity of the changed terahertz wave.

[0118] At this time, the reflectivity is the amplitude of the terahertz wave reflected from the center point (0) in the normal state, as in Equation 1 below. ) and the amplitude of the terahertz wave reflected from any one of the first border point (1), the second border point (2), the third border point (3) and the fourth border point (4) during the packaging process. ) can be calculated as a ratio of .

[0119]

[0120] [Formula 1]

[0121]

[0122]

[0123] Here, the detection location where the amplitude and reflectivity of the terahertz wave increase is the direction in which the semiconductor chip (C) has translated, and the two-dimensional translational degree of the semiconductor chip (C) can be calculated through the increase and decrease in the reflectivity of the terahertz wave detected at at least three border points.

[0124] Meanwhile, in the case of the transmission mode, the transmittance is, as in Equation 2 below, the amplitude of the transmitted terahertz wave at the center point (0) in the steady state. ) and the amplitude of the terahertz wave transmitted at any one of the first border point (1), the second border point (2), the third border point (3) and the fourth border point (4) during the packaging process. ) can be calculated as a ratio of .

[0125]

[0126] [Formula 2]

[0127]

[0128]

[0129] In this way, when misalignment due to two-dimensional translation of the semiconductor chip (C) is confirmed through the first monitoring mode and the degree of two-dimensional translation of the semiconductor chip (C) is calculated, subsequent process conditions can be adjusted according to the misalignment due to two-dimensional translation of the semiconductor chip (C).

[0130] For example, if misalignment due to two-dimensional translation of a semiconductor chip (C) is confirmed through the first monitoring mode and the two-dimensional translation degree of the semiconductor chip (C) is calculated, the position of the wiring whose position is fixed can be corrected during the rewiring process.

[0131] In addition, process conditions such as die attach process, flip chip process, and molding process can be adjusted to match misalignment due to two-dimensional translation of the semiconductor chip (C).

[0132] Accordingly, even if misalignment occurs due to two-dimensional translation of the semiconductor chip (C), it is possible to manufacture a semiconductor package (P), and through this, the process yield can be improved.

[0133] In addition, referring again to FIG. 12, the monitoring unit (130) can monitor in real time whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C) when the second monitoring mode is selected.

[0134] In the second monitoring mode, it is possible to determine whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C) through an increase or decrease in the reflectivity of the terahertz wave detected at at least one detection point set as a detection position.

[0135] Referring to FIG. 14, when the second monitoring mode is selected, the monitoring unit (130) can monitor whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C) through the increase or decrease in the reflectivity of terahertz waves detected at the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4).

[0136] When a two-dimensional rotation of a semiconductor chip (C) occurs during a semiconductor packaging process, the area of ​​a portion of a cross-section of a terahertz wave that overlaps the semiconductor chip (C) at each of the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4) changes according to the two-dimensional rotation direction of the semiconductor chip (C) compared to the overlapping area in the normal state, and the reflectivity of the terahertz wave may change due to this change in the overlapping area.

[0137] The above monitoring unit (130) can monitor whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C) by calculating the reflectivity of the changed terahertz wave through the above formula 1.

[0138] At this time, the detection position where the amplitude and reflectivity of the terahertz wave increase is the direction in which the semiconductor chip (C) is two-dimensionally rotated, and the two-dimensional rotation degree of the semiconductor chip (C) can be calculated through the increase or decrease in the reflectivity of the terahertz wave detected at at least two border points.

[0139] Referring to FIG. 15, the monitoring unit (130) can monitor in real time whether there is deformation due to three-dimensional tilting of the semiconductor chip (C) when the third monitoring mode is selected.

[0140] In the third monitoring mode, the degree of deformation due to three-dimensional tilting of the semiconductor chip (C) can be calculated through the detection time difference of terahertz waves detected at at least one detection point set as a detection position.

[0141] That is, when the third monitoring mode is selected, the monitoring unit (130) can monitor the degree of deformation due to three-dimensional tilting of the semiconductor chip (C) through the difference in detection time of terahertz waves detected at the center point (0), the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4).

[0142] Referring to FIGS. 16 and 17, when a three-dimensional tilt occurs in the semiconductor chip (C), the reflection angle of the terahertz wave reflected at each detection point may change. At this time, scattering may occur at the edge point, which may reduce the amplitude of the reflected terahertz wave, and the tilt may cause a difference in the detection time for each detection position of the reflected terahertz wave.

[0143] The above monitoring unit (130) can calculate the degree of inclination of the semiconductor chip (C) by using the difference in detection time for each detection position, and for this purpose, at least two detection points can be set in the third monitoring mode.

[0144] Here, the degree of inclination of the semiconductor chip (C) can be calculated by converting the terahertz wave detection time into an internal optical path of the semiconductor package (P) as in Equation 3 below, and deriving the position of the semiconductor chip (C) for each detection position.

[0145]

[0146] [Formula 3]

[0147]

[0148]

[0149] Here, c is the speed of light, n is the refractive index, and Δt is the detection time difference.

[0150] In addition, referring to FIG. 18, the monitoring unit (130) can monitor in real time whether there is deformation due to three-dimensional warpage of the semiconductor package (P) when the fourth monitoring mode is selected.

[0151] In the fourth monitoring mode, the degree of deformation due to three-dimensional bending of the semiconductor package (P) can be calculated through the difference in detection time of terahertz waves detected at at least one detection point set as a detection position.

[0152] That is, when the fourth monitoring mode is selected, the monitoring unit (130) can monitor the degree of deformation due to three-dimensional bending of the semiconductor package (P) through the difference in detection time of terahertz waves detected at the center point (0), the first border point (1), the second border point (2), the third border point (3), and the fourth border point (4).

[0153] Referring to FIGS. 19 and 20, when warping occurs in a semiconductor package (P) during a semiconductor packaging process, a time delay occurs in the detection time of terahertz waves at each detection position depending on the surface height created by the warping.

[0154] The above monitoring unit (130) can monitor the degree of warpage of the semiconductor package (P) through the detection time delay of terahertz waves at each detection location.

[0155] Meanwhile, according to one embodiment of the present invention, the monitoring unit (130) can monitor the status of the semiconductor package (P) through scan mode and precision mode.

[0156] The above monitoring unit (130) can first detect terahertz waves at a minimum detection point among at least one detection point set in the semiconductor package (P) through the scan mode, thereby quickly confirming whether an abnormality has occurred in the semiconductor package (P).

[0157] At this time, if an abnormality is detected in the state of the semiconductor package (P) in the scan mode, the monitoring unit (130) can switch the scan mode to a precision mode to detect terahertz waves at more detection points than the minimum detection points in the scan mode, thereby precisely monitoring whether the semiconductor package (P) is abnormal.

[0158] In this way, the load on the system can be reduced by precisely monitoring only when an anomaly is confirmed.

[0159] According to one embodiment of the present invention, the monitoring unit (130) can track the location of the semiconductor chip (C) using terahertz waves.

[0160] The above monitoring unit (130) can monitor the results of the previous process and the status of the current process for the semiconductor package (P) by tracking the location of the semiconductor chip (C).

[0161] Through this, the conditions of the pre-set subsequent process can be adjusted according to the position of the tracked semiconductor chip (C).

[0162] For example, when tracking the location of a semiconductor chip (C), if terahertz waves are not detected at a set detection point, the monitoring unit (130) can determine that the semiconductor chip (C) has moved out of the process location.

[0163] At this time, if the monitoring unit (130) determines that the semiconductor chip (C) has moved out of the process position, it can scan the entire area of ​​the semiconductor package (P) with terahertz waves to confirm the position of the semiconductor chip (C).

[0164] Through this, subsequent process conditions can be adjusted, and if it is determined to be defective, packaging for the semiconductor chip (C) can be excluded from subsequent processes.

[0165]

[0166] Hereinafter, a semiconductor packaging process monitoring method using terahertz waves according to an embodiment of the present invention will be described with reference to FIG. 21.

[0167]

[0168] FIG. 21 is a flowchart illustrating a semiconductor packaging process monitoring method using terahertz waves according to one embodiment of the present invention.

[0169]

[0170] Referring to FIG. 21, a semiconductor packaging process monitoring method using terahertz waves according to an embodiment of the present invention may include steps S110, S120, and S130.

[0171]

[0172] S110 stage

[0173] The above step S110 is a step of generating terahertz waves toward the semiconductor package (P).

[0174] In the above step S110, terahertz waves can be generated toward the semiconductor package (P) through reflection mode.

[0175] To this end, in the step S110, the terahertz wave can be generated so that the terahertz wave is incident on the semiconductor package (P) at an angle exceeding 0° and less than 90°.

[0176] Additionally, in the above step S110, terahertz waves can be generated toward the semiconductor package (P) through a transmission mode.

[0177] Meanwhile, according to one embodiment of the present invention, in step S110, the focus of the generated terahertz wave can be adjusted so that the terahertz wave is precisely irradiated to at least one detection point set in the semiconductor package (P).

[0178] Here, the detection point may include a center point (0) set at the center of the semiconductor chip (C), and four border points (1, 2, 3, 4) set at the borders of the semiconductor chip (C), for example, at the four corners of the semiconductor chip (C).

[0179]

[0180] S120 stage

[0181] The above step S120 is a step of detecting terahertz waves generated toward a semiconductor package (P) and passing through the semiconductor package (P).

[0182] In the step S110 above, when terahertz waves are generated toward the semiconductor package (P) through the reflection mode, terahertz waves reflected from the surface of the EMC layer (M) of the semiconductor package (P) and the surface of the semiconductor chip (C) can be detected in the step S120 above.

[0183] In addition, when terahertz waves are generated toward the semiconductor package (P) through the transmission mode in the step S110, the terahertz waves that pass through the semiconductor package (P) can be detected in the step S120.

[0184]

[0185] Step S130

[0186] The above step S130 is a step of monitoring the state of the semiconductor package (P) in real time based on the terahertz wave detected in the above step S120 during the packaging process for the semiconductor package (P).

[0187] According to one embodiment of the present invention, the state of the semiconductor package (P) may include at least one of misalignment due to two-dimensional translation of the semiconductor chip (C), misalignment due to two-dimensional rotation of the semiconductor chip (C), deformation due to three-dimensional tilt of the semiconductor chip (C), and deformation due to three-dimensional bending of the semiconductor package (P).

[0188] According to one embodiment of the present invention, in step S130, the state of the semiconductor package (P) can be monitored in real time through any one monitoring process selected from among the first monitoring process, the second monitoring process, the third monitoring process, and the fourth monitoring process.

[0189] At this time, if any one of the first monitoring process, the second monitoring process, the third monitoring process, and the fourth monitoring process is selected, the detection location and the number of detections for the detection point can be automatically defined.

[0190] In the above step S130, if the first monitoring process is selected, it is possible to monitor in real time whether there is misalignment due to two-dimensional translation of the semiconductor chip (C).

[0191] In the above step S130, it is possible to monitor whether there is misalignment due to two-dimensional translation of the semiconductor chip (C) through an increase or decrease in the reflectivity of the terahertz wave detected at at least one detection point set as a detection position.

[0192] In the above step S130, the changed reflectance at the detection point is calculated based on the reflectance in the normal state, so that misalignment due to two-dimensional translation of the semiconductor chip (C) can be monitored.

[0193] In addition, in the step S130, if the second monitoring process is selected, it is possible to monitor in real time whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C).

[0194] In the above step S130, it is possible to monitor whether there is misalignment due to two-dimensional rotation of the semiconductor chip (C) through an increase or decrease in the reflectivity of the terahertz wave detected at at least one detection point set as a detection position.

[0195] And in the above step S130, if the third monitoring process is selected, it is possible to monitor in real time whether the semiconductor chip (C) is deformed due to three-dimensional tilting.

[0196] In the above step S130, the degree of deformation due to three-dimensional tilting of the semiconductor chip (C) can be calculated through the difference in detection time of terahertz waves detected at at least one detection point set as a detection position.

[0197] For this purpose, in step S130, if the third monitoring process is selected, at least two detection points can be set.

[0198] In addition, in the above step S130, if the fourth monitoring process is selected, it is possible to monitor in real time whether the semiconductor package (P) is deformed due to three-dimensional bending.

[0199] In the above step S130, the degree of deformation due to three-dimensional bending of the semiconductor package (P) can be calculated through the difference in detection time of terahertz waves detected at at least one detection point set as a detection position.

[0200] That is, in the above step S130, when the fourth monitoring process is selected, the degree of warpage of the semiconductor package (P) can be monitored through the detection time delay of the terahertz wave for each detection position.

[0201] Meanwhile, in the above step S130, terahertz waves can be detected at a minimum of detection points among at least one detection point set in the semiconductor package (P), thereby quickly confirming whether an abnormality has occurred in the semiconductor package (P).

[0202] At this time, in the step S130, if an abnormality is confirmed in the state of the semiconductor package (P), terahertz waves can be detected at more detection points than the minimum detection points, and through this, whether the semiconductor package (P) is abnormal can be precisely monitored.

[0203] According to one embodiment of the present invention, in step S130, if terahertz waves are not detected at the set detection point, it can be determined that the semiconductor chip (C) has moved out of the process position.

[0204] At this time, in the step S130, if it is determined that the semiconductor chip (C) has deviated from the process position, the position of the semiconductor chip (C) can be confirmed by scanning the entire area of ​​the semiconductor package (P) with terahertz waves.

[0205] Through this, subsequent process conditions can be adjusted, and if it is determined to be defective, packaging for the semiconductor chip (C) can be excluded from subsequent processes.

[0206]

[0207] Example 1

[0208] As shown in FIGS. 22 and 23, a silicon chip was attached onto a copper plate and EMC molded to produce a semiconductor package specimen.

[0209] At this time, as illustrated in Fig. 24, the silicon chip (C) was attached to the copper plate (S) in a normal state, a 7° rotated state (Rotate), and a tilted state (Tilted). The tilted state was achieved by applying a tilt to the silicon chip (C) using a bonder that was left-right asymmetrical (based on the drawing).

[0210] Next, as shown in Fig. 25, a copper plate (S) with a silicon chip (C) attached was hot pressed to produce a semiconductor package specimen, and then scanned in terahertz reflection mode to image it.

[0211] Referring to FIGS. 26 and 27, the terahertz wave irradiated on the semiconductor package specimen was reflected and detected from the surface of the EMC layer (M) and the surface of the silicon chip (C).

[0212] Referring to Fig. 28, when the silicon chip (C) is in a normal state, it was confirmed that the terahertz waves reflected from the edge points (Normal#1, Normal#2, Normal#3, Normal#4), which are detection points set at each of the four corners of the silicon chip (C), are detected with an amplitude of approximately 25% of the terahertz waves reflected from the center point (Center) set at the center of the silicon chip (C).

[0213] Referring to Fig. 29, this is because, when the silicon chip (C) is in a normal state, at the border point, the area where the cross-section of the terahertz wave overlaps with the silicon chip (C) is 1 / 4 of the cross-section of the terahertz wave.

[0214] As shown in Fig. 30, when the silicon chip (C) moves in the right direction (based on Fig. 31), if the reflectivity of the terahertz wave is theoretically derived, the reflectivity of the terahertz wave reflected at the boundary points (Point#1, Point#2) in the direction in which the silicon chip (C) moves increases, and the reflectivity of the terahertz wave reflected at the boundary points (Point#3, Point#4) in the opposite direction decreases.

[0215] Referring to Fig. 31, this is because, at the boundary points (Point#1, Point#2) in the direction in which the silicon chip (C) moves, the area where the cross-section of the terahertz wave overlaps with the silicon chip (C) increases from 1 / 4 to 1 / 2 of the normal state.

[0216] Referring to Fig. 32, when the silicon chip (C) is rotated two-dimensionally, it was confirmed that the amplitudes of the terahertz waves reflected from the center point (Rotate#0) and the terahertz waves reflected from the edge points (Rotate#1, Rotate#2, Rotate#3, Rotate#4) are measured differently from when in the normal state.

[0217] Referring to FIG. 33, the terahertz waves reflected from the 2nd and 3rd edge points in the rotational direction of the silicon chip (C) are detected with a higher amplitude than the terahertz waves reflected in the normal state, and the terahertz waves reflected from the 1st and 4th edge points in the opposite direction of rotation are detected with a lower amplitude than in the normal state.

[0218] This is because the area where the cross-section of the terahertz wave overlaps the silicon chip (C) increases for edge points located in the direction of rotation and decreases for edge points located in the opposite direction of rotation.

[0219] Referring to Figure 34, it was confirmed that this shows the same trend as the simulation when the terahertz wave reflectivity of the silicon chip (C) was assumed to be 100%.

[0220] Referring to Fig. 35, in the case of a semiconductor package specimen in which a silicon chip (C) is in a three-dimensionally inclined state, the terahertz waves reflected from the center point and the edge point have a difference in detection time depending on the detection position.

[0221] Referring to FIG. 36, the terahertz waves reflected from the 3rd and 4th edge points set in the inclined direction are detected later because the optical path inside the EMC layer is longer than the terahertz waves reflected from the 0th center point, and the terahertz waves reflected from the 1st and 2nd edge points located higher than the 0th center point are detected first because the optical path inside the EMC layer is shorter than the terahertz waves reflected from the 0th center point.

[0222] Through this, it was confirmed that the three-dimensional alignment state of the silicon chip (C) can be monitored by the difference in detection time of terahertz waves detected at each detection location.

[0223] Table 1 below is a lookup table for monitoring the semiconductor packaging process through the increase or decrease in the amplitude of terahertz waves reflected at detection points set in the semiconductor package.

[0224]

[0225] Number 1 THz2 THz3 THz4 THz5 THz Judgment 1↑↑↑↑-Stage focus problem 2↑↑↓↓-Chip moves to the left 3↑↓↓↑-Chip moves to the bottom 4↓↓↑↑-Chip moves to the right 5↑↓↑↓-Chip rotates counterclockwise 6↓↑↑↓-Chip moves to the top 7↓↑↓↑-Chip rotates clockwise 8↑↓↓↓-Chip moves to the bottom left 9↓↓↓↑-Chip moves to the bottom right 10↓↓↑↓-Chip moves to the top right 11↓↑↓↓-Chip moves to the top left 12↓↓↓↓↓Chip tilting occurs

[0226] Referring to Table 1 above and Fig. 37 showing each detection point of the lookup table above, a lookup table, which is a manual that can monitor the state of a semiconductor package through the increase or decrease in the amplitude of terahertz waves according to the detection position of terahertz waves, was created.

[0227] First, if case 1 is monitored, in which the amplitudes of terahertz waves reflected from the 1st to 4th border points are all increased, it can be determined that there is a stage focus problem.

[0228] In the case where case 2 is monitored, in which the amplitude of the terahertz wave reflected from the border points 1 and 2 increases and the amplitude of the terahertz wave reflected from the border points 3 and 4 decreases, it can be determined that the chip has moved to the left based on the drawing.

[0229] In the case where case 3 is monitored, in which the amplitude of the terahertz wave reflected from the boundary points 1 and 4 increases and the amplitude of the terahertz wave reflected from the boundary points 2 and 3 decreases, it can be determined that the chip has moved downward based on the drawing.

[0230] Continuing, when case 4 is monitored, in which the amplitude of the terahertz wave reflected from the border points 3 and 4 increases and the amplitude of the terahertz wave reflected from the border points 1 and 2 decreases, it can be determined that the chip has moved to the right based on the drawing.

[0231] In the case where case 5 is monitored, in which the amplitude of the terahertz waves reflected from the border points 1 and 3 increases and the amplitude of the terahertz waves reflected from the border points 2 and 4 decreases, it can be determined that the chip is rotated counterclockwise based on the drawing.

[0232] In the case 6 where the amplitude of the terahertz wave reflected from the border points 2 and 3 increases and the amplitude of the terahertz wave reflected from the border points 1 and 4 decreases, it can be determined that the chip has moved upward based on the drawing.

[0233] In the case 7 where the amplitude of the terahertz waves reflected from the border points 2 and 4 increases and the amplitude of the terahertz waves reflected from the border points 1 and 3 decreases, it can be determined that the chip is rotated clockwise based on the drawing.

[0234] Continuing, when case 8 is monitored, in which the amplitude of the terahertz wave reflected from the 1st border point increases and the amplitude of the terahertz wave reflected from the 2nd, 3rd, and 4th border points decreases, it can be determined that the chip has moved to the lower left based on the drawing.

[0235] Continuing, when case 9 is monitored, in which the amplitude of the terahertz wave reflected from the 4th border point increases and the amplitude of the terahertz wave reflected from the 1st, 2nd, and 3rd border points decreases, it can be determined that the chip has moved to the lower right based on the drawing.

[0236] Continuing, when case 10 is monitored, in which the amplitude of the terahertz wave reflected from the 3rd border point increases and the amplitude of the terahertz wave reflected from the 1st, 2nd, and 4th border points decreases, it can be determined that the chip has moved to the upper right based on the drawing.

[0237] Continuing, when case 11 is monitored, in which the amplitude of the terahertz wave reflected from the 2nd border point increases and the amplitude of the terahertz wave reflected from the 1st, 3rd, and 4th border points decreases, it can be determined that the chip has moved to the upper left based on the drawing.

[0238] Finally, when case 12 is monitored, in which the amplitudes of the terahertz waves reflected from the border points 1, 2, 3, and 4 and the center point 5 are all reduced, it can be determined that the chip is tilted three-dimensionally.

[0239] However, this is only an example, and the detection location and number of terahertz waves may change depending on the monitoring method and packaging conditions.

[0240] As illustrated in FIG. 38, a semiconductor packaging process monitoring device and method according to an embodiment of the present invention can inspect die shift caused by the flow of EMC under high temperature and high pressure conditions during a semiconductor molding process.

[0241] In addition, as illustrated in FIG. 39, the semiconductor packaging process monitoring device and method according to one embodiment of the present invention can inspect in advance the alignment error that occurs when moving a chip to a subsequent process position, such as a die attach process or a redistribution line (RDL) process.

[0242] In this way, the semiconductor packaging process monitoring device and method according to one embodiment of the present invention can detect alignment errors of semiconductor chips occurring in a semiconductor packaging process at an early stage, thereby reflecting the position and alignment status of the semiconductor chips in subsequent processes, thereby improving process yield and productivity.

[0243] In addition, when excessive alignment error of a semiconductor chip is monitored through a semiconductor packaging process monitoring device and method according to an embodiment of the present invention, packaging for the semiconductor chip can be excluded in a subsequent process, thereby saving process costs.

[0244]

[0245] While the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to the specific embodiments described above, and should be interpreted in accordance with the appended claims. Furthermore, those skilled in the art will appreciate that numerous modifications and variations are possible without departing from the scope of the present invention.

Claims

1. An emitter that generates terahertz waves toward a semiconductor package; A detector that detects terahertz waves generated from the emitter and reflected from the semiconductor package or terahertz waves transmitted through the semiconductor package; and A monitoring unit for monitoring the status of the semiconductor package in real time based on the terahertz wave detected by the detector during the packaging process for the semiconductor package; A semiconductor packaging process monitoring device using terahertz waves, wherein the state of the semiconductor package includes at least one of misalignment due to two-dimensional translation of the semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional bending of the semiconductor package.

2. In paragraph 1, The semiconductor package has at least one detection point set at which terahertz waves emitted from the emitter are detected by the detector. A semiconductor packaging process monitoring device using terahertz waves, wherein the at least one detection point includes at least one border point set on the border of the semiconductor chip.

3. In paragraph 2, The above monitoring unit, A first monitoring mode for monitoring in real time whether there is misalignment due to two-dimensional translation of the semiconductor chip; A second monitoring mode for monitoring in real time whether there is misalignment due to two-dimensional rotation of the semiconductor chip; A third monitoring mode that monitors in real time whether there is deformation due to three-dimensional tilting of the semiconductor chip; and The state of the semiconductor package is monitored in real time through one of the monitoring modes selected from the fourth monitoring mode that monitors in real time whether the semiconductor package is deformed due to three-dimensional bending. A semiconductor packaging process monitoring device using terahertz waves, wherein when any one of the first to fourth monitoring modes is selected, the detection position and the number of detections for at least one detection point are automatically defined.

4. In paragraph 3, A semiconductor packaging process monitoring device using terahertz waves, wherein the above-mentioned boundary point is set at a position where a portion of the cross-section of the terahertz wave detected by the detector overlaps with the semiconductor chip.

5. In paragraph 4, In the first monitoring mode, whether there is misalignment due to two-dimensional translation of the semiconductor chip is determined through an increase or decrease in the reflectivity of the terahertz wave detected at at least one detection point defined as a detection position, and the degree of two-dimensional translation of the semiconductor chip is calculated through an increase or decrease in the reflectivity of the terahertz wave detected at at least three of the boundary points. A semiconductor packaging process monitoring device using terahertz waves, wherein in the second monitoring mode, misalignment due to two-dimensional rotation of the semiconductor chip is determined through an increase or decrease in the reflectivity of terahertz waves detected at at least one detection point defined as a detection position, and the degree of two-dimensional rotation of the semiconductor chip is calculated through an increase or decrease in the reflectivity of terahertz waves detected at at least two of the edge points.

6. In paragraph 5, A semiconductor packaging process monitoring device using terahertz waves, wherein, through the first monitoring mode, misalignment due to two-dimensional translation of the semiconductor chip is confirmed, and the degree of two-dimensional translation of the semiconductor chip is calculated, subsequent process conditions are adjusted according to the misalignment due to two-dimensional translation of the semiconductor chip.

7. In paragraph 4, In the third monitoring mode, the degree of deformation due to three-dimensional tilting of the semiconductor chip is calculated through the detection time difference of terahertz waves detected at at least one detection point defined as a detection position. A semiconductor packaging process monitoring device using terahertz waves, wherein in the fourth monitoring mode, the degree of deformation due to three-dimensional bending of the semiconductor package is calculated through the detection time difference of terahertz waves detected at at least one detection point defined as a detection position.

8. In paragraph 2, The above monitoring unit monitors the status of the semiconductor package through scan mode and precision mode. In the above scan mode, terahertz waves are detected at a minimum of the detection points among the at least one detection point, A semiconductor packaging process monitoring device using terahertz waves, wherein the monitoring unit, when an abnormality is detected in the state of the semiconductor package in the scan mode, switches the scan mode to a precision mode and detects terahertz waves at more detection points than the minimum detection points in the scan mode.

9. In paragraph 1, Including more visualization department, The above imaging unit is a semiconductor packaging process monitoring device using terahertz waves, which scans the semiconductor package with terahertz waves through a reflection mode to image it.

10. In paragraph 1, A semiconductor packaging process monitoring device using terahertz waves, wherein the above emitter and detector are provided in at least one, but corresponding numbers.

11. In paragraph 1, A semiconductor packaging process monitoring device using terahertz waves, wherein the above terahertz waves are provided in a pulsed type or continuous wave type.

12. In paragraph 1, The above monitoring unit is a semiconductor packaging process monitoring device using terahertz waves, which monitors the results of the previous process and the status of the current process for the semiconductor package so that the preset subsequent process conditions are adjusted through position tracking of the semiconductor chip using the terahertz waves.

13. A step of generating terahertz waves toward a semiconductor package; A step of detecting terahertz waves reflected from the semiconductor package or terahertz waves transmitting through the semiconductor package; and During the packaging process for the semiconductor package, a step of monitoring the state of the semiconductor package in real time based on the terahertz wave detected in the step of detecting the terahertz wave; including; A method for monitoring a semiconductor packaging process using terahertz waves, wherein the state of the semiconductor package includes at least one of misalignment due to two-dimensional translation of the semiconductor chip, misalignment due to two-dimensional rotation of the semiconductor chip, deformation due to three-dimensional tilt of the semiconductor chip, and deformation due to three-dimensional bending of the semiconductor package.

14. In paragraph 13, At least one detection point at which the terahertz wave is detected is set in the semiconductor package, wherein said at least one detection point includes at least one border point set on the border of said semiconductor chip, The above monitoring steps are: A first monitoring process for monitoring in real time whether there is misalignment due to two-dimensional translation of the semiconductor chip; A second monitoring process for monitoring in real time whether there is misalignment due to two-dimensional rotation of the semiconductor chip; A third monitoring process for monitoring in real time whether there is deformation due to three-dimensional tilting of the semiconductor chip; and The state of the semiconductor package is monitored in real time through any one of the monitoring processes selected from the fourth monitoring process that monitors in real time whether the semiconductor package is deformed due to three-dimensional bending. A method for monitoring a semiconductor packaging process using terahertz waves, wherein when any one of the first to fourth monitoring processes is selected, the detection position and the number of detections for at least one detection point are automatically defined.

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