Semiconductor structure and manufacturing method therefor, radio frequency apparatus, and electronic device

Abstract

A semiconductor structure and a manufacturing method therefor, a radio frequency apparatus, and an electronic device, aiming at solving the problem of low backoff efficiency. An active region structure (201) is arranged on a substrate (101), the active region structure (201) comprises a barrier layer (202) and a channel layer (203) which are stacked, an electrode layer (301) is stacked on the active region structure (201), the electrode layer (301) comprises a first electrode (302) and a second electrode (303) spaced apart from each other, and the first electrode (302) and the second electrode (303) are both connected to the barrier layer (202); in a direction parallel to a current, the width of an interface (204) of the channel layer (203) and the barrier layer (202) in a direction perpendicular to the current gradually decreases, and in an on state, the flow velocity of electrons gradually increases as the width of the interface (204) decreases, so that the electrons can reach a saturation drift velocity more quickly, thereby obtaining a saturation current, decreasing knee point voltage, and improving the backoff efficiency of the semiconductor structure.

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