Inductor component, method for manufacturing inductor component, and substrate for manufacturing inductor component

Abstract

An inductor component (10) comprises an element body (11), a first insulating layer (31), a lower inductor wire (51L), and an upper inductor wire (51U). The lower inductor wire (51L) comprises a lower wire body (52L) and a lower protruding part (53L) that protrudes from the outer surface of the lower wire body (52L) on a third negative direction (Z2) side. The outer surface of the lower wire body (52L) on the third negative direction (Z2) side is in contact with the outer surface of the first insulating layer (31) on a third positive direction (Z1) side. When viewed facing in the third positive direction (Z1), the lower protruding part (53L) is positioned within a range surrounded by the outer edge of the lower wire body (52L), and extends along the lower wire body (52L). The outer surface of the upper inductor wire (51U) on the third negative direction (Z2) side is in contact with the surface of the lower inductor wire (51L) on the third positive direction (Z1) side.

Description

Inductor component, inductor component manufacturing method, and substrate for manufacturing inductor component

[0001] The present disclosure relates to an inductor component, a method for manufacturing an inductor component, and a substrate for manufacturing an inductor component.

[0002] The inductor component disclosed in Patent Document 1 includes an element body and inductor wiring. The element body has a first main surface. The inductor wiring extends within the element body parallel to the first main surface. The inductor wiring is spirally shaped. In other words, the inductor wiring has parallel portions.

[0003] Patent No. 6447368

[0004] In an inductor component such as that disclosed in Patent Document 1, the cross-sectional area of ​​the inductor wiring may be increased to reduce the DC resistance of the inductor wiring. However, for example, if the width dimension of the inductor wiring is increased, the spacing between the parallel portions of the inductor wiring becomes narrower. Therefore, if a manufacturing error or the like occurs, there is a higher risk of a short circuit occurring between the parallel portions of the inductor wiring.

[0005] In order to solve the above problem, one aspect of the present disclosure includes an element body including a magnetic material and having a planar main surface, an insulating layer located within the element body and extending on a plane parallel to the main surface, a lower inductor wiring extending parallel to the main surface within the element body, and an upper inductor wiring extending parallel to the main surface within the element body, wherein one direction perpendicular to the main surface is defined as a positive direction and a direction opposite to the positive direction is defined as a negative direction, the lower inductor wiring including a lower wiring main body extending on an outer surface on the positive direction side of the insulating layer, and a protrusion protruding from the outer surface on the negative direction side of the lower wiring main body to the negative direction, The upper inductor wiring is in contact with the outer surface on the positive side of the insulating layer, and when viewed in the positive direction, the protrusion is located within an area surrounded by the outer edge of the wiring body and extends along the wiring body, and when viewed in cross section perpendicular to the main surface, the dimension of the protrusion in a direction parallel to the main surface is smaller than the dimension of the protrusion in a direction parallel to the main surface of the wiring body at the point where it is connected, and the upper inductor wiring extends on the outer surface on the positive side of the lower wiring body along the lower wiring body, and the outer surface on the negative side of the upper inductor wiring is in contact with the positive side surface of the lower inductor wiring, making this an inductor component.

[0006] Another aspect of the present disclosure is a method for manufacturing a semiconductor device, comprising: a seed layer forming step of forming a conductive seed layer on a main surface of a base substrate; an insulating layer forming step of forming an insulating layer having an opening of a predetermined wiring pattern on the seed layer; a lower resin wall forming step of forming a lower resin wall on the insulating layer along an outer edge of the opening; a lower inductor wiring forming step of forming a lower wiring main body in a space surrounded by the lower resin wall by electrolytic plating by supplying power to the seed layer, and forming a protruding portion in the opening that protrudes from the lower wiring main body and extends along the lower wiring main body; This is a method for manufacturing an inductor component, comprising: an upper resin wall forming process for forming an upper resin wall along the outer edge of the lower wiring body above the lower wiring body; an upper inductor wiring forming process for forming an upper inductor wiring in a space surrounded by the upper resin wall by electrolytic plating by supplying power to the seed layer; an element body forming process, after the upper inductor wiring forming process, for forming a magnetic layer containing a magnetic material around the lower wiring body, the lower protrusion, and the upper inductor wiring; and a seed layer removing process, after the first element body forming process, for removing the seed layer.

[0007] Also, one aspect of the present disclosure is a semiconductor device comprising: a base substrate; a conductive seed layer located on a main surface side of the base substrate; an insulating layer located on the seed layer and extending parallel to the main surface of the base substrate; a lower inductor wiring located on the insulating layer and extending parallel to the main surface of the base substrate; and an upper inductor wiring located on the lower inductor wiring and extending parallel to the main surface of the base substrate, wherein one direction perpendicular to the main surface of the base substrate is defined as a positive direction and a direction opposite to the positive direction is defined as a negative direction, and the lower inductor wiring is disposed on the positive direction side of the insulating layer. and a protrusion protruding from the negative-side outer surface of the lower wiring body toward the negative direction, wherein, when viewed in the positive direction, the protrusion extends along the lower wiring body and the negative-side surface of the protrusion is in contact with the seed layer, and the upper-level inductor wiring extends along the lower wiring body on the positive-side outer surface of the lower wiring body, and the negative-side surface of the upper-level inductor wiring is in contact with the positive-side surface of the lower-level inductor wiring.

[0008] This makes it possible to reduce the DC resistance of the inductor wiring while preventing short circuits between different parts of the inductor wiring.

[0009] FIG. 1 is a perspective view of an inductor component according to a first embodiment. FIG. 2 is a side perspective view of the inductor component according to the first embodiment. FIG. 3 is a cross-sectional view taken along line 3-3 in FIG. 2. FIG. 4 is a cross-sectional view taken along line 4-4 in FIG. 2. FIG. 5 is a cross-sectional view taken along line 5-5 in FIGS. 3 and 4. FIG. 6 is a flowchart of a manufacturing process for the inductor component according to the first embodiment. FIG. 7 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 8 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 9 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 10 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 11 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 12 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 13 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 14 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 15 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 16 is an explanatory diagram of a manufacturing method for the inductor component according to the first embodiment. FIG. 17 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 18 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 19 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 20 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 21 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 22 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 23 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 24 is an explanatory diagram of a method for manufacturing an inductor component according to the first embodiment. FIG. 25 is a perspective view of an inductor component according to a second embodiment. FIG. 26 is a see-through view from above of the inductor component according to the second embodiment. FIG. 27 is a cross-sectional view taken along line 27-27 in FIG. 26. FIG. 28 is a flowchart of a manufacturing process for an inductor component according to the second embodiment. FIG. 29 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. FIG. 30 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. FIG. 31 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. FIG. 32 is an explanatory diagram of a method for manufacturing the inductor component of the second embodiment.Fig. 33 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. Fig. 34 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. Fig. 35 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. Fig. 36 is an explanatory diagram of a method for manufacturing an inductor component according to the second embodiment. Fig. 37 is a perspective view of an inductor component according to a modified example. Fig. 38 is a transparent view from above of an inductor component according to a modified example. Fig. 39 is a cross-sectional view of an inductor component according to a modified example. Fig. 40 is a cross-sectional view of an inductor component according to a modified example. Fig. 41 is an explanatory diagram of a method for manufacturing an inductor component according to a modified example.

[0010] Hereinafter, embodiments of the inductor component will be described with reference to the drawings. Note that the drawings may show components enlarged to facilitate understanding. The dimensional ratios of the components may differ from those in the actual components or from those in other drawings.

[0011] <Inductor Component of First Embodiment> Hereinafter, a first embodiment of an inductor component and a method for manufacturing an inductor component will be described.

[0012] 1, the inductor component 10 has a generally rectangular parallelepiped shape. The inductor component 10 includes an element body 11.

[0013] The element body 11 is substantially rectangular. That is, the element body 11 has six planar outer surfaces. Of these six outer surfaces, a specific one is designated as the first main surface 11A. Furthermore, a surface located opposite the first main surface 11A and parallel to the first main surface 11A is designated as the second main surface 11B. Furthermore, four surfaces perpendicular to the first main surface 11A, in other words, the outer surfaces excluding the first main surface 11A and the second main surface 11B, are designated as the side surfaces 11C of the element body 11. The outer shapes of the first main surface 11A, the second main surface 11B, and the side surfaces 11C of the element body 11 are all rectangular.

[0014] Here, the axis parallel to the long side of the first main surface 11A is defined as the first axis X. The axis parallel to the short side of the first main surface 11A is defined as the second axis Y. The axis perpendicular to the first main surface 11A is defined as the third axis Z. In this embodiment, the first axis X, the second axis Y, and the third axis Z are perpendicular to one another. Furthermore, a specific direction along the first axis X is defined as the first positive direction X1, and the direction opposite to the first positive direction X1 is defined as the first negative direction X2. Furthermore, a specific direction along the second axis Y is defined as the second positive direction Y1, and the direction opposite to the second positive direction Y1 is defined as the second negative direction Y2. Furthermore, the direction along the third axis Z toward which the first main surface 11A faces is defined as the third positive direction Z1, and the direction opposite to the third positive direction Z1 is defined as the third negative direction Z2.

[0015] As shown in FIG. 2 , the base body 11 includes, as magnetic layers 20, a first magnetic layer 21, a first interlayer magnetic layer 22, a second magnetic layer 23, a second interlayer magnetic layer 24, a third magnetic layer 25, a third interlayer magnetic layer 26, and a fourth magnetic layer 27, in that order from the third negative direction Z2 side. That is, of the outer surfaces of the fourth magnetic layer 27, the outer surface facing the third positive direction Z1 is the first main surface 11A. Of the outer surfaces of the first magnetic layer 21, the outer surface facing the third negative direction Z2 is the second main surface 11B. Note that in FIG. 2 , the boundaries between the magnetic layers 20 are shown as virtual two-dot chain lines. In reality, clear boundaries between the magnetic layers 20 may not be observable.

[0016] The material of the magnetic layer 20, i.e., the material of the base body 11, contains a magnetic material. Specifically, the material of the base body 11 is an organic resin containing metal magnetic powder. In this embodiment, the metal magnetic powder is metal magnetic powder made of an Fe-based alloy or an amorphous alloy. More specifically, the metal magnetic powder is FeSiCr-based metal powder containing iron.

[0017] The inductor component 10 includes three insulating layers: a first insulating layer 31, a second insulating layer 32, and a third insulating layer 33. Each insulating layer is made of an insulating resin.

[0018] The first insulating layer 31 extends on a plane parallel to the first main surface 11A within the element body 11. The first insulating layer 31 is in contact with the surface of the first magnetic layer 21 on the third positive direction Z1 side. In the third axis Z direction, the position of the first insulating layer 31 is the same as that of the first interlayer magnetic layer 22.

[0019] The second insulating layer 32 extends within the element body 11 on a plane parallel to the first main surface 11A. In the third axis Z direction, the position of the second insulating layer 32 is the same as the position of the second interlayer magnetic layer 24. The third insulating layer 33 extends within the element body 11 on a plane parallel to the first main surface 11A. The third insulating layer 33 is in contact with the surface of the fourth magnetic layer 27 on the third negative direction Z2 side. In the third axis Z direction, the position of the third insulating layer 33 is the same as the position of the third interlayer magnetic layer 26. Note that "parallel" means that they are essentially parallel, and allows for manufacturing errors. For example, if the acute angle formed by the first insulating layer 31 and the first main surface 11A is less than 5 degrees, they are considered to be parallel.

[0020] 2, the inductor component 10 includes an inductor wiring 50. The inductor wiring 50 is located inside the element body 11. The inductor wiring 50 is made of a conductive material. In this embodiment, the composition of the inductor wiring 50 includes a copper ratio of 99 wt % or more and a sulfur ratio of 0.1 wt % to 1.0 wt %.

[0021] The inductor wiring 50 includes an upper inductor wiring 51U and a lower inductor wiring 51L. The lower inductor wiring 51L extends parallel to the first main surface 11A. The lower inductor wiring 51L is located in the same layer as the first insulating layer 31 and the second magnetic layer 23 in the third axis Z direction. That is, the outer surface of the lower inductor wiring 51L on the third negative direction Z2 side is in contact with the outer surface of the first magnetic layer 21 on the third positive direction Z1 side. The second insulating layer 32 and the upper inductor wiring 51U are located on the outer surface of the lower inductor wiring 51L on the third positive direction Z1 side.

[0022] The lower inductor wiring 51L includes a lower wiring main body 52L. The lower wiring main body 52L is a portion of the lower inductor wiring 51L that is located in the same layer as the second magnetic layer 23 in the third axis Z direction. Therefore, the lower wiring main body 52L extends on the outer surface of the first insulating layer 31 on the third positive direction Z1 side. In other words, the outer surface of the lower wiring main body 52L on the third negative direction Z2 side and the outer surface of the first insulating layer 31 on the third positive direction Z1 side are in contact with each other.

[0023] 3 , when the inductor component 10 is seen through in the third negative direction Z2, the lower inductor wiring 51L extends in a spiral shape. Furthermore, there is a distance between the outer edge of the lower inductor wiring 51L and the side surface 11C of the element body 11. Therefore, the lower inductor wiring 51L is not exposed at the side surface 11C of the element body 11. Furthermore, in this embodiment, no other conductive object is connected to the lower inductor wiring 51L and extends to the side surface 11C of the element body 11. Therefore, no conductive object electrically connected to the lower inductor wiring 51L is exposed at the side surface 11C of the element body 11.

[0024] The lower wiring main body 52L has a pair of lower pad portions LP and a lower wiring portion LL. The lower pad portions LP are located at both ends of the lower wiring main body 52L. Of the pair of lower pad portions LP, the lower pad portion LP located on the first positive direction X1 side is referred to as the lower inner pad portion LP1. The lower pad portion LP located on the first negative direction X2 side of the lower inner pad portion LP1 is referred to as the lower outer pad portion LP2. In other words, when viewed in the third negative direction Z2, the lower inner pad portion LP1 is located on the first positive direction X1 side of the geometric center of the element body 11. The lower outer pad portion LP2 is located on the first negative direction X2 side of the lower inner pad portion LP1.

[0025] The lower wiring portion LL connects a pair of lower pad portions LP. Specifically, when the inductor component 10 is seen through in the third negative direction Z2, the lower wiring portion LL extends counterclockwise from the lower inner pad portion LP1 to the lower outer pad portion LP2, with the diameter increasing as the number of turns increases. The number of turns in the lower wiring portion LL is approximately 2.0 turns.

[0026] The number of turns of the lower wiring portion LL is determined based on a virtual vector as follows: First, a vector is imagined with its start and end points at a first end of the center line CL of the lower wiring portion LL. In this state, this vector is a zero vector. Then, while looking in the third negative direction Z2, the start point of this vector is kept fixed, and the end point of the vector is moved along the center line CL of the lower wiring portion LL to the second end of the center line CL. At this time, the number of turns is calculated by assuming that a 360-degree rotation of the vector's direction is 1.0 turn. For example, if the virtual vector rotates by 180 degrees, the number of turns is 0.5 turns.

[0027] In the lower wiring portion LL, the width dimension in a direction perpendicular to the center line CL and parallel to the first main surface 11A is approximately constant throughout the entire lower wiring portion LL. The center line CL of the lower wiring portion LL is determined as follows: When viewed in a perspective manner in the third negative direction Z2, among line segments connecting any point on the outer edge of the lower wiring portion LL to a point on the outer edge on the opposite side, the line segment with the shortest distance between the two points is identified. When line segments are identified in this way throughout the entire outer edge of the lower wiring portion LL, the line connecting the midpoints of the identified line segments is defined as the center line CL of the lower wiring portion LL when viewed in a perspective manner in the third negative direction Z2.

[0028] 2, the upper inductor wiring 51U extends parallel to the first major surface 11A. The upper inductor wiring 51U is located in the same layer as the second insulating layer 32 and the third magnetic layer 25 in the third axis Z direction. The outer surface of the upper inductor wiring 51U on the third negative direction Z2 side is in contact with the outer surface of the lower inductor wiring 51L on the third positive direction Z1 side. The third insulating layer 33 is located on the outer surface of the upper inductor wiring 51U on the third positive direction Z1 side.

[0029] The upper inductor wiring 51U includes an upper wiring main body 52U. The upper wiring main body 52U is a portion of the upper inductor wiring 51U that is located in the same layer as the third magnetic layer 25 in the third axis Z direction. Therefore, the upper wiring main body 52U extends on the outer surface of the second insulating layer 32 on the third positive direction Z1 side. In other words, the outer surface of the upper wiring main body 52U on the third negative direction Z2 side and the outer surface of the second insulating layer 32 on the third positive direction Z1 side are in contact with each other.

[0030] The shape of the upper inductor wiring 51U is the same as that of the lower inductor wiring 51L. That is, as shown in FIG. 4 , when the inductor component 10 is seen through in the third negative direction Z2, the upper inductor wiring 51U extends in a spiral shape. Furthermore, there is a distance between the outer edge of the upper inductor wiring 51U and the side surface 11C of the element body 11. Therefore, the upper inductor wiring 51U is not exposed at the side surface 11C of the element body 11. Furthermore, in this embodiment, no other conductive object is connected to the upper inductor wiring 51U and extends to the side surface 11C of the element body 11. Therefore, no conductive object electrically connected to the upper inductor wiring 51U is exposed at the side surface 11C of the element body 11.

[0031] The upper wiring body 52U has a pair of upper pad portions UP and an upper wiring portion UL. The upper pad portions UP are located at both ends of the upper wiring body 52U. Of the pair of upper pad portions UP, the upper pad portion UP located on the first positive direction X1 side is referred to as the upper inner pad portion UP1. The upper pad portion UP located on the first negative direction X2 side of the upper inner pad portion UP1 is referred to as the upper outer pad portion UP2. In other words, the upper inner pad portion UP1 is located on the third positive direction Z1 side of the lower inner pad portion LP1. The upper outer pad portion UP2 is located on the third positive direction Z1 side of the lower outer pad portion LP2. The shape of each upper pad portion UP is the same as the shape of the corresponding lower pad portion LP.

[0032] As shown in FIG. 5 , the minimum width 52UW of the upper wiring main body 52U is the same as the minimum width 52LW of the lower wiring main body 52L. Here, the minimum width 52UW of the upper wiring main body 52U refers to the minimum dimension of the upper wiring main body 52U in a direction perpendicular to the center line CL of the upper wiring main body 52U and parallel to the first main surface 11A. In this embodiment, it refers to the dimension of the upper wiring portion UL in the above direction. Similarly, the minimum width 52LW of the lower wiring main body 52L refers to the minimum dimension of the lower wiring main body 52L in a direction perpendicular to the center line CL of the lower wiring main body 52L and parallel to the first main surface 11A. In this embodiment, it refers to the dimension of the lower wiring portion LL in the above direction.

[0033] The upper wiring portion UL connects a pair of upper pad portions UP. Specifically, when the inductor component 10 is seen through in the third negative direction Z2, the upper wiring portion UL extends counterclockwise from the upper inner pad portion UP1 to the upper outer pad portion UP2, with the diameter increasing as the number of turns increases. The number of turns in the upper wiring portion UL is the same as the number of turns in the lower wiring portion LL. That is, the number of turns in the upper wiring portion UL is approximately 2.0 turns. The definition of the number of turns is the same as that of the lower wiring portion LL.

[0034] 5 , the total height 50H of the inductor wiring 50 is at least twice the minimum width 52LW of the lower-level wiring main body 52L. Similarly, the total height 50H of the inductor wiring 50 is at least twice the minimum width 52UW of the upper-level wiring main body 52U. In this embodiment, the total height 50H of the inductor wiring 50 is approximately four times the minimum width 52LW of the lower-level wiring main body 52L and the minimum width 52UW of the upper-level wiring main body 52U. Note that the total height 50H here refers to the sum of the maximum dimensions of the lower-level inductor wiring 51L and the upper-level inductor wiring 51U in a direction perpendicular to the first main surface 11A.

[0035] As shown in FIG. 5 , the inductor component 10 includes a lower resin wall 41 and an upper resin wall 42. Each resin wall is made of an insulating resin. The lower resin wall 41 is laminated on a portion of the surface of the first insulating layer 31 on the third positive direction Z1 side. The lower resin wall 41 is located in the same layer as the lower wiring main body 52L and the second magnetic layer 23 in the third axis Z direction. The lower resin wall 41 covers the side surface 52LS of the lower wiring main body 52L on the outer surface of the lower inductor wiring 51L. The lower resin wall 41 also reaches the same layer as the second interlayer magnetic layer 24 and the second insulating layer 32 in the third axis Z direction. That is, the lower resin wall 41 also contacts the side surface 32S of the second interlayer magnetic layer 24 and the second insulating layer 32. The side surface 52LS of the lower wiring main body 52L refers to the outer surface of the lower wiring main body 52L excluding the outer surface on the third positive direction Z1 side and the outer surface on the third negative direction Z2 side. The side surface 32S of the second insulating layer 32 refers to the outer surface of the second insulating layer 32 excluding the outer surface on the third positive direction Z1 side and the outer surface on the third negative direction Z2 side.

[0036] The upper resin wall 42 is laminated on the surface of the lower resin wall 41 on the third positive direction Z1 side. The upper resin wall 42 is located in the same layer as the upper wiring main body 52U and the third magnetic layer 25 in the third axis Z direction. The upper resin wall 42 covers the side surface 52US of the upper wiring main body 52U on the outer surface of the upper inductor wiring 51U. The upper resin wall 42 also extends to the same layer as the third interlayer magnetic layer 26 and the third insulating layer 33 in the third axis Z direction. That is, the upper resin wall 42 also contacts the side surface 33S of the third interlayer magnetic layer 26 and the third insulating layer 33. The side surface 52US of the upper wiring main body 52U refers to the outer surface of the upper wiring main body 52U excluding the outer surface on the third positive direction Z1 side and the outer surface on the third negative direction Z2 side. The side surface 33S of the third insulating layer 33 refers to the outer surface of the third insulating layer 33 excluding the outer surface on the third positive direction Z1 side and the outer surface on the third negative direction Z2 side.

[0037] 5, the outer surface of the upper resin wall 42 on the third positive direction Z1 side is illustrated as being in contact with the outer surface of the fourth magnetic layer 27 on the third negative direction Z2 side. In reality, the outer surface of the upper resin wall 42 on the third positive direction Z1 side may be buried in the third insulating layer 33 without being in contact with the outer surface of the fourth magnetic layer 27 on the third negative direction Z2 side.

[0038] The inductor component 10 includes a first pillar-shaped wiring 61A and a second pillar-shaped wiring 61B. The material of each pillar-shaped wiring is the same as the material of the inductor wiring 50. Each pillar-shaped wiring extends in a direction intersecting the first main surface 11A. Each pillar-shaped wiring is located in the same layer as the third interlayer magnetic layer 26 and the fourth magnetic layer 27 in the third axis Z direction. Each pillar-shaped wiring extends in a direction perpendicular to the first main surface 11A, i.e., in the third axis Z direction.

[0039] Each pillar-shaped wiring is in contact with the outer surface of the upper-stage wiring main body 52U on the third positive direction Z1 side. Therefore, each pillar-shaped wiring is electrically connected to the inductor wiring 50. Specifically, the outer surface of the first pillar-shaped wiring 61A on the third negative direction Z2 side is in contact with a surface parallel to the first main surface 11A of the upper-stage inner pad portion UP1. The outer surface of the second pillar-shaped wiring 61B on the third negative direction Z2 side is in contact with a surface parallel to the first main surface 11A of the upper-stage outer pad portion UP2.

[0040] The inductor component 10 includes a first external electrode 81A and a second external electrode 81B. Each external electrode is located on the first main surface 11A of the element body 11. That is, each external electrode covers a portion of the outer surface of the element body 11.

[0041] The first external electrode 81A is located on the first main surface 11A on the first positive direction X1 side with respect to the geometric center of the first main surface 11A. The second external electrode 81B is located on the first main surface 11A on the first negative direction X2 side with respect to the geometric center of the first main surface 11A. The first external electrode 81A is in contact with a surface of the first columnar wiring 61A facing in the third positive direction Z1. The second external electrode 81B is in contact with a surface of the second columnar wiring 61B facing in the third positive direction Z1.

[0042] The inductor component 10 includes a solder resist 70. The solder resist 70 has higher insulating properties than the element body 11. The solder resist 70 covers the surface of the element body 11 facing the third positive direction Z1, excluding at least two external electrodes. In other words, the first main surface 11A of the element body 11 is not exposed because it is covered by the external electrodes and the solder resist 70. Note that the outer surface of the solder resist 70 on the third positive direction Z1 side does not need to be entirely exposed. For example, a portion of each external electrode may cover a portion of the outer surface of the solder resist 70 on the third positive direction Z1 side.

[0043] (Regarding the Protrusion) Next, the detailed configuration of the inductor wiring 50 will be described. As shown in Fig. 5, the lower inductor wiring 51L includes a lower wiring main body 52L and a lower protrusion 53L. The lower inductor wiring 51L is formed in a single step by electrolytic plating in a manufacturing method described below. That is, the lower wiring main body 52L and the lower protrusion 53L are integrally molded.

[0044] The lower protrusion 53L is a portion of the lower inductor wiring 51L that is located in the same layer as the first interlayer magnetic layer 22 in the third axis Z direction. The lower protrusion 53L protrudes in the third negative direction Z2 from the outer surface of the lower wiring main body 52L on the third negative direction Z2 side. Specifically, the lower protrusion 53L protrudes from both the lower wiring portion LL and the lower pad portion LP. The lower protrusion 53L penetrates the first insulating layer 31. In this embodiment, the dimension of the lower protrusion 53L in the third axis Z direction is the same as the dimension of the first insulating layer 31. Therefore, the position of the lower protrusion 53L, the position of the first insulating layer 31, and the position of the first interlayer magnetic layer 22 are the same in the third axis Z direction.

[0045] The outer surface of the lower protrusion 53L on the third negative direction Z2 side is in contact with the element body 11. The side surface 53LS of the lower protrusion 53L is in contact with the first insulating layer 31. The side surface 53LS of the lower protrusion 53L refers to the outer surface of the lower protrusion 53L excluding the outer surface on the third negative direction Z2 side. However, because the lower protrusion 53L protrudes from the lower wiring main body 52L, it does not have an outer surface on the third positive direction Z1 side.

[0046] As shown in FIG. 3 , when viewed in the third positive direction Z1, the lower protrusion 53L extends along the lower wiring main body 52L. Specifically, the lower protrusion 53L extends from the lower inner pad portion LP1 through the lower wiring portion LL to the lower outer pad portion LP2. That is, the lower protrusion 53L extends across substantially the entire lower wiring main body 52L. Furthermore, when viewed in the third positive direction Z1, the lower protrusion 53L is located within an area surrounded by the outer edge of the lower wiring main body 52L. More specifically, as shown in FIG. 5 , when viewed in a cross section perpendicular to the first main surface 11A, the dimension of each portion of the lower inductor wiring 51L in a direction parallel to the first main surface 11A is defined as the width dimension. In this case, the width dimension 53LW of the lower protrusion 53L is smaller than the width dimension of the lower wiring main body 52L at the point where the lower protrusion 53L is connected on the same cross section. 5, the width of the lower wiring main body 52L is the minimum width 52LW. That is, the width 53LW of the lower protruding portion 53L is smaller than the minimum width 52LW of the lower wiring main body 52L at the connection point of the lower protruding portion 53L on the same cross section.

[0047] 5, the upper inductor wiring 51U includes an upper wiring body 52U and an upper protrusion 53U. The upper inductor wiring 51U is formed in a single step by electrolytic plating in a manufacturing method described below. That is, the upper wiring body 52U and the upper protrusion 53U are integrally molded.

[0048] The upper protrusion 53U is a portion of the upper inductor wiring 51U that is located in the same layer as the second interlayer magnetic layer 24 in the third axis Z direction. The upper protrusion 53U protrudes in the third negative direction Z2 from the outer surface of the upper wiring main body 52U on the third negative direction Z2 side. Specifically, the upper protrusion 53U protrudes from both the upper wiring portion UL and the upper pad portion UP. The upper protrusion 53U penetrates the second insulating layer 32. In this embodiment, the dimension of the upper protrusion 53U in the third axis Z direction is the same as the dimension of the second insulating layer 32. Therefore, the position of the upper protrusion 53U, the position of the second insulating layer 32, and the position of the second interlayer magnetic layer 24 are the same in the third axis Z direction.

[0049] The outer surface of the upper protrusion 53U on the third negative direction Z2 side is in contact with the outer surface of the lower wiring main body 52L on the third positive direction Z1 side. The side surface 53US of the upper protrusion 53U is in contact with the second insulating layer 32. The side surface 53US of the upper protrusion 53U refers to the outer surface of the upper protrusion 53U excluding the outer surface on the third negative direction Z2 side. However, because the upper protrusion 53U protrudes from the upper wiring main body 52U, it does not have an outer surface on the third positive direction Z1 side.

[0050] When viewed in the third positive direction Z1, the upper protrusion 53U extends along the upper wiring main body 52U. Specifically, the upper protrusion 53U extends from the upper inner pad portion UP1 through the upper wiring portion UL to the upper outer pad portion UP2. That is, the upper protrusion 53U extends across substantially the entire upper wiring main body 52U. As shown in FIG. 4 , when viewed in the third positive direction Z1, the upper protrusion 53U is located within an area surrounded by the outer edge of the upper wiring main body 52U. More specifically, as shown in FIG. 5 , when viewed in a cross section perpendicular to the first main surface 11A, the dimension of each portion of the upper inductor wiring 51U in a direction parallel to the first main surface 11A is defined as the width dimension. In this case, the width dimension 53UW of the upper protrusion 53U is smaller than the width dimension of the upper wiring main body 52U at the point where the upper protrusion 53U is connected on the same cross section. 5, the width of the upper wiring main body 52U is the minimum width 52UW. That is, the width 53UW of the upper protruding portion 53U is smaller than the minimum width 52UW of the upper wiring main body 52U at the connection point of the upper protruding portion 53U on the same cross section.

[0051] (Regarding the Lead Portion) Next, the detailed configuration of each pillar-shaped wiring will be described. As shown in FIG. 5 , the first pillar-shaped wiring 61A includes a first pillar-shaped portion 62A and a first lead-out portion 63A. The first pillar-shaped wiring 61A is formed in a single step by electrolytic plating in a manufacturing method described below. Therefore, the first pillar-shaped portion 62A and the first lead-out portion 63A are integrally molded. The shapes of the first pillar-shaped portion 62A and the first lead-out portion 63A are both approximately semicircular pillars corresponding to the shapes of the upper-stage inner pad portion UP1.

[0052] The first columnar section 62A is a portion of the first columnar wiring 61A that is located in the same layer as the fourth magnetic layer 27 in the third axis Z direction. The first columnar section 62A extends in the third positive direction Z1 from the outer surface of the third insulating layer 33 on the third positive direction Z1 side. That is, the outer surface of the first columnar section 62A on the third negative direction Z2 side and the outer surface of the third insulating layer 33 on the third positive direction Z1 side are in contact with each other.

[0053] The first lead portion 63A is located in the same layer as the third interlayer magnetic layer 26 in the third axis Z direction. The first lead portion 63A protrudes in the third negative direction Z2 from the outer surface of the first columnar portion 62A on the third negative direction Z2 side. The first lead portion 63A penetrates the third insulating layer 33. In addition, the dimension of the first lead portion 63A in the third axis Z direction is the same as the dimension of the third insulating layer 33. Therefore, in the third axis Z direction, the position of the first lead portion 63A, the position of the third insulating layer 33, and the position of the third interlayer magnetic layer 26 are the same.

[0054] An outer surface on the third negative direction Z2 side, which is one end of the first lead portion 63A, is in contact with a surface parallel to the first main surface 11A of the upper inner pad portion UP1. The outer edge of the first lead portion 63A is parallel to the outer edge of the upper inner pad portion UP1. When viewed in the third positive direction Z1, the outer edge of the first lead portion 63A is parallel to the outer edge of the first columnar portion 62A. When viewed in the third positive direction Z1, the area enclosed by the outer edge of the first columnar portion 62A is 1.3 times or less the area enclosed by the outer edge of the first lead portion 63A.

[0055] A side surface 63AS of the first lead portion 63A is in contact with the third insulating layer 33. The side surface 63AS of the first lead portion 63A refers to the outer surface of the first lead portion 63A excluding the outer surface on the third negative direction Z2 side. However, because the first lead portion 63A protrudes from the first columnar portion 62A, it does not have an outer surface on the third positive direction Z1 side.

[0056] When viewed in a cross section perpendicular to the first main surface 11A, the dimension of each portion of the first columnar wiring 61A in a direction parallel to the first main surface 11A is defined as the width dimension of the first columnar wiring 61A. The width dimension 63AW of the first lead-out portion 63A is smaller than the width dimension 62AW of the first columnar portion 62A at a point where the first lead-out portion 63A is connected on the same cross section.

[0057] The second columnar wiring 61B includes a second columnar portion 62B and a second lead portion 63B. The second columnar wiring 61B is formed in a single step by electrolytic plating in a manufacturing method described below. Therefore, the second columnar portion 62B and the second lead portion 63B are integrally molded. The shapes of the second columnar portion 62B and the second lead portion 63B are both approximately quadrangular prisms corresponding to the shapes of the upper-stage inner pad portion UP1.

[0058] The second columnar section 62B is a portion of the second columnar wiring 61B that is located in the same layer as the fourth magnetic layer 27 in the third axis Z direction. The second columnar section 62B extends in the third positive direction Z1 from the outer surface of the third insulating layer 33 on the third positive direction Z1 side. That is, the outer surface of the second columnar section 62B on the third negative direction Z2 side and the outer surface of the third insulating layer 33 on the third positive direction Z1 side are in contact with each other.

[0059] The second lead portion 63B is located in the same layer as the third interlayer magnetic layer 26 in the third axis Z direction. The second lead portion 63B protrudes in the third negative direction Z2 from the outer surface of the second columnar portion 62B on the third negative direction Z2 side. The second lead portion 63B penetrates the third insulating layer 33. In addition, the dimension of the second lead portion 63B in the third axis Z direction is the same as the dimension of the third insulating layer 33. Therefore, in the third axis Z direction, the position of the second lead portion 63B, the position of the third insulating layer 33, the third interlayer magnetic layer 26, and the position of the first lead portion 63A are the same.

[0060] An outer surface on the third negative direction Z2 side, which is one end of the second lead portion 63B, is in contact with a surface parallel to the second main surface 11B of the upper outer pad portion UP2. The outer edge of the second lead portion 63B is parallel to the outer edge of the upper outer pad portion UP2. When viewed in the third positive direction Z1, the outer edge of the second lead portion 63B is parallel to the outer edge of the second columnar portion 62B. When viewed in the third positive direction Z1, the area enclosed by the outer edge of the second columnar portion 62B is 1.3 times or less the area enclosed by the outer edge of the second lead portion 63B.

[0061] A side surface 63BS of the second lead portion 63B is in contact with the third insulating layer 33. The side surface 63BS of the second lead portion 63B refers to the outer surface of the second lead portion 63B excluding the outer surface on the third negative direction Z2 side. However, because the second lead portion 63B protrudes from the second columnar portion 62B, it does not have an outer surface on the third positive direction Z1 side.

[0062] When viewed in a cross section perpendicular to first main surface 11A, the dimension of each portion of second columnar wiring 61B in a direction parallel to first main surface 11A is defined as the width dimension of second columnar wiring 61B. Width dimension 63BW of second lead-out portion 63B is smaller than width dimension 62BW of second columnar portion 62B at a point where second lead-out portion 63B is connected on the same cross section.

[0063] (Manufacturing Method) Next, a description will be given of a manufacturing method for the inductor component 10 according to the first embodiment. The manufacturing method for the inductor component 10 uses a so-called semi-additive process (SAP).

[0064] 6 , the method for manufacturing the inductor component 10 includes the following 18 steps: a base preparation step S11, an adhesive layer formation step S12, a seed layer formation step S13, a first insulating layer formation step S14, a lower resin wall formation step S15, a lower inductor wiring formation step S16, a second insulating layer formation step S17, an upper resin wall formation step S18, an upper inductor wiring formation step S19, a third insulating layer formation step S20, a columnar wiring formation step S21, an insulating layer cutting step S22, a first element body formation step S23, a solder resist formation step S24, a seed layer removal step S25, a second element body formation step S26, an external electrode formation step S27, and a singulation step S28.

[0065] 7, a base preparation step S11 is first performed. Specifically, a plate-shaped base substrate 91 is prepared. The base substrate 91 is made of ceramic. The dimensions of a main surface 91A of the base substrate 91 are such that a plurality of inductor components 10 can be formed thereon.

[0066] Here, the axis perpendicular to the main surface 91A of the base substrate 91 is defined as the third axis Z. Furthermore, the direction along the third axis Z in which the first main surface 11A faces is defined as the third positive direction Z1, and the direction opposite to the third positive direction Z1 is defined as the third negative direction Z2. In other words, the third positive direction Z1 is the "upward direction," and the third negative direction Z2 is the "downward direction." That is, the "upper surface" is the surface facing the third positive direction Z1. The "lower surface" is the surface facing the third negative direction Z2. Note that the third positive direction Z1 during the manufacture of the inductor component 10 corresponds to the third positive direction Z1 in the inductor component 10 after manufacture. The same applies to the third negative direction Z2.

[0067] 8, an adhesive layer forming step S12 is performed. In the adhesive layer forming step S12, an adhesive layer 92 having adhesive properties is applied onto the main surface 91A of the base substrate 91. Specifically, the material of the adhesive layer 92 is a resin such as polyimide.

[0068] Next, as shown in FIG. 9 , a seed layer formation step S13 is performed. In the seed layer formation step S13, a conductive seed layer 93 is formed on the main surface 91A of the base substrate 91. Specifically, the seed layer 93 is formed on the upper surface of the adhesive layer 92 by sputtering. The material of the seed layer 93 is copper. Note that the seed layer 93 formed in the seed layer formation step S13 in this embodiment is not so-called patterned. For example, the seed layer 93 is formed over the entire main surface 91A of the base substrate 91.

[0069] Next, as shown in FIG. 10 , a first insulating layer forming step S14 is performed. In the first insulating layer forming step S14, a first insulating layer 31 having a first opening 94 of a predetermined wiring pattern is formed on the upper surface of the seed layer 93 by photolithography. The position and shape of the first opening 94 correspond to the position and shape of the lower protrusion 53L of the lower inductor wiring 51L to be formed in a later step. Furthermore, the range of the first opening 94 is slightly narrower than the range in which the lower wiring main body 52L is formed. Therefore, the "predetermined wiring pattern" in the first insulating layer forming step S14 refers to a position and shape that follows the lower inductor wiring 51L formed in the lower inductor wiring forming step S16.

[0070] 11 , a lower resin wall formation step S15 is performed. In the lower resin wall formation step S15, a lower resin wall 41 is formed on the upper surface of the first insulating layer 31 along the outer edge of the first opening 94 by photolithography. At this time, the lower resin wall 41 is formed at a position slightly spaced apart from the edge of the first opening 94.

[0071] 12 , a lower inductor wiring forming step S16 is performed. In the lower inductor wiring forming step S16, power is supplied to the seed layer 93 to form the lower inductor wiring 51L by electrolytic plating. More specifically, the lower wiring main body 52L is formed in the space surrounded by the lower resin wall 41, and a lower protruding portion 53L is integrally formed in the first opening 94. The lower inductor wiring 51L protrudes from the lower wiring main body 52L and extends along the lower wiring main body 52L. In the lower inductor wiring forming step S16, the lower inductor wiring 51L is formed by a single electrolytic plating process, and therefore the lower wiring main body 52L and the lower protruding portion 53L are integrally formed.

[0072] Next, as shown in FIG. 13 , a second insulating layer forming step S17 is performed. In the second insulating layer forming step S17, a second insulating layer 32 having a second opening 95 of a predetermined wiring pattern is formed on the upper surface of the lower wiring main body 52L by photolithography. The position and shape of the second opening 95 correspond to the position and shape of the upper protrusion 53U of the upper inductor wiring 51U to be formed in a later step. Furthermore, the range of the second opening 95 is slightly narrower than the range in which the upper wiring main body 52U will be formed. Therefore, the "predetermined wiring pattern" in the second insulating layer forming step S17 refers to a position and shape that follows the upper inductor wiring 51U formed in the upper inductor wiring forming step S19.

[0073] In addition, in a direction parallel to the main surface 91A, the dimension of the second opening 95 is the same as the dimension of the first opening 94. In other words, when viewed in the third negative direction Z2, the outer edge shape of the second opening 95 is the same as the outer edge shape of the first opening 94. Note that "the same" allows for a manufacturing error of, for example, 5%.

[0074] 14 , an upper resin wall formation step S18 is performed. In the upper resin wall formation step S18, the upper resin wall 42 is formed by photolithography on the upper surface of the second insulating layer 32 along the outer edge of the second opening 95. At this time, the upper resin wall 42 is formed at a position slightly spaced apart from the edge of the second opening 95.

[0075] 15 , an upper-stage inductor wiring forming step S19 is performed. In the upper-stage inductor wiring forming step S19, power is supplied to the seed layer 93 to form the upper-stage inductor wiring 51U by electrolytic plating. More specifically, the upper-stage wiring main body 52U is formed in the space surrounded by the upper-stage resin wall 42, and an upper-stage protruding portion 53U is integrally formed in the second opening 95, protruding from the upper-stage wiring main body 52U and extending along the upper-stage wiring main body 52U. In the upper-stage inductor wiring forming step S19, the upper-stage inductor wiring 51U is formed by a single electrolytic plating process, and therefore the upper-stage wiring main body 52U and the upper-stage protruding portion 53U are integrally formed.

[0076] 16 , a third insulating layer forming step S20 is performed. In the third insulating layer forming step S20, a third insulating layer 33 having a predetermined pattern of third openings 96 is formed on the upper surface of the upper wiring main body 52U by photolithography. The position and shape of the third openings 96 correspond to the positions and shapes of the first lead portion 63A and the second lead portion 63B to be formed later. Meanwhile, the range of the third openings 96 is slightly narrower than the range in which each columnar portion is formed.

[0077] 17 , a pillar-shaped wiring formation step S21 is performed. In the pillar-shaped wiring formation step S21, power is supplied to the seed layer 93 to form each lead-out portion in the third opening 96 by electrolytic plating via the inductor wiring 50, and each pillar-shaped portion is integrally formed on the third positive direction Z1 side of the lead-out portion and the third insulating layer 33.

[0078] Specifically, although not shown in the drawings, an auxiliary wall made of resin is formed on the upper surface of the third insulating layer 33 along the outer edge of the third opening 96 by photolithography. At this time, the auxiliary wall is formed at a position slightly away from the edge of the third opening 96. Next, each columnar portion is formed in the space surrounded by the auxiliary wall by electrolytic plating. At the same time, a first lead portion 63A protruding from the first columnar portion 62A is integrally formed in the third opening 96, and a second lead portion 63B protruding from the second columnar portion 62B is integrally formed. Next, the auxiliary wall is removed to form each columnar wiring.

[0079] 18 , an insulating layer cutting step S22 is performed. In the insulating layer cutting step S22, an excess portion of the first insulating layer 31 is removed by a laser. Specifically, a portion of the first insulating layer 31 that does not overlap with the region where the inductor wiring 50 and each resin wall are present when viewed from a direction perpendicular to the main surface 91A of the base substrate 91 is cut so that the seed layer 93 is exposed.

[0080] 19 , a first element body forming step S23 is performed. In the first element body forming step S23, a magnetic layer 20 containing a magnetic material is formed around the lower wiring main body 52L, the lower protruding portion 53L, the upper wiring main body 52U, the upper protruding portion 53U, each lead portion, and each columnar portion. Specifically, the magnetic layer 20 other than the first magnetic layer 21 is formed around the first insulating layer 31 covering the lower protruding portion 53L, the lower resin wall 41 covering the lower wiring main body 52L, the second insulating layer 32 covering the upper protruding portion 53U, the upper resin wall 42 covering the upper wiring main body 52U, the third insulating layer 33 covering the two lead portions, and the two columnar portions.

[0081] More specifically, in the first element body forming step S23, first, a resin containing magnetic powder is applied to the upper surface of the seed layer 93. At this time, the resin containing magnetic powder is applied so as to cover the upper surfaces of each columnar wiring. Next, a press process is performed to harden the resin containing magnetic powder. After that, the upper surface of the resin is removed until the upper surfaces of each columnar wiring are exposed. As a result, the first interlayer magnetic layer 22, the second magnetic layer 23, the second interlayer magnetic layer 24, the third magnetic layer 25, the third interlayer magnetic layer 26, and the fourth magnetic layer 27 are formed on the upper surface side of the seed layer 93. Note that in FIGS. 19 to 24, the first interlayer magnetic layer 22, the second magnetic layer 23, the second interlayer magnetic layer 24, the third magnetic layer 25, the third interlayer magnetic layer 26, and the fourth magnetic layer 27 are illustrated indistinguishably as magnetic layer 20.

[0082] 20, a solder resist forming step S24 is performed. In the solder resist forming step S24, a solder resist 70 is formed in regions of the upper surface of the third magnetic layer 25 and the upper surfaces of each columnar wiring where the first external electrode 81A and the second external electrode 81B are not to be formed. Specifically, an insulating resin is patterned in the regions by photolithography.

[0083] 21 , a seed layer removal step S25 is performed. In the seed layer removal step S25, first, the base substrate 91 is cut and removed. Next, the adhesive layer 92 is removed by a method such as desmearing or ashing. After that, the seed layer 93 is removed by etching. Note that the product in the state from the upper-stage inductor wiring formation step S19 to the removal of the base substrate 91 in the seed layer removal step S25 can be treated as a substrate 99 for manufacturing an inductor component.

[0084] Next, as shown in FIG. 22 , a second element body forming step S26 is performed. In the second element body forming step S26, a first magnetic layer 21 containing a magnetic material is formed on the lower surfaces of the first insulating layer 31 and the first interlayer magnetic layer 22. Specifically, in the second element body forming step S26, a resin containing magnetic powder is first applied to the lower surfaces of the first insulating layer 31 and the first interlayer magnetic layer 22. Next, the resin containing magnetic powder is hardened by pressing. Thereafter, the lower surface side of the resin is cut so that the dimensions of the inductor component 10 are the desired values. As a result, the first magnetic layer 21 is formed on the surfaces of the first insulating layer 31 and the first interlayer magnetic layer 22 on the third negative direction Z2 side. Note that in FIGS. 22 to 24 , the first magnetic layer 21, the first interlayer magnetic layer 22, the second magnetic layer 23, the second interlayer magnetic layer 24, the third magnetic layer 25, the third interlayer magnetic layer 26, and the fourth magnetic layer 27 are all illustrated indistinguishably as the magnetic layer 20.

[0085] Next, as shown in FIG. 23 , the external electrode formation step S27 is performed. In the external electrode formation step S27, a first external electrode 81A and a second external electrode 81B are formed. The areas in which each external electrode is formed are the areas of the upper surface of the fourth magnetic layer 27 and the upper surfaces of each columnar wiring that are not covered by the solder resist 70. Copper plating, nickel plating, and gold plating are performed in this order on these areas using an electroless plating method. As a result, the first external electrode 81A and the second external electrode 81B are formed in the above areas. Note that in FIGS. 23 and 24 , the copper, nickel, and gold plating layers are shown without distinction.

[0086] Next, as shown in Fig. 24, a singulation step S28 is performed. In the singulation step S28, the inductor components 10 are singulated by dicing. Specifically, the integrally molded multiple inductor components 10 are separated into individual inductor components 10. In Fig. 24, the cut surface SL of the inductor components 10 formed by dicing is indicated by a dashed dotted line. Through the above steps, the inductor components 10 are manufactured.

[0087] (Effects of the First Embodiment) (1-1) In the above embodiment, the inductor wiring 50 includes a lower-stage inductor wiring 51L and an upper-stage inductor wiring 51U. As a result, the cross-sectional area of ​​the inductor wiring 50 is larger than, for example, a case in which only the lower-stage inductor wiring 51L is included, due to the inclusion of the upper-stage inductor wiring 51U. As a result, the DC resistance of the inductor wiring 50 can be reduced. Furthermore, because the inductor wiring 50 is large in the height direction, the spacing between parallel portions of the inductor wiring 50 is less likely to become narrower than when the inductor wiring 50 is large in the width direction. In other words, there is less risk of short-circuiting between different portions of the inductor wiring 50.

[0088] Furthermore, the lower inductor wiring 51L includes a lower wiring main body 52L and a lower protrusion 53L. The lower protrusion 53L extends to the position where the first insulating layer 31 is present in a direction perpendicular to the first main surface 11A. This increases the cross-sectional area of ​​the lower inductor wiring 51L by the amount of the lower protrusion 53L. As a result, the DC resistance of the lower inductor wiring 51L can be reduced.

[0089] The lower protrusion 53L protrudes from the outer surface of the lower wiring main body 52L on the third negative direction Z2 side and extends along the lower wiring main body 52L. That is, the lower protrusion 53L is present within the range of the outer surface of the lower wiring main body 52L on the third negative direction Z2 side.

[0090] (1-2) The outer surface of the lower protrusion 53L on the third negative direction Z2 side is in contact with the element body 11 and is not in contact with other conductive objects. This reduces the risk of short-circuiting between different portions of the lower protrusion 53L.

[0091] (1-3) In the above embodiment, the total height 50H of the inductor wiring 50 is at least twice the minimum width 52LW of the lower wiring body 52L. The total height 50H of the inductor wiring 50 is at least twice the minimum width 52UW of the upper wiring body 52U. If the total height 50H of the inductor wiring 50 is at least twice the minimum width, the DC resistance is reduced.

[0092] (1-4) In the above embodiment, the lower wiring main body 52L and the lower protrusion 53L are integrally molded. This prevents the electric field from being disturbed at the boundary between the lower wiring main body 52L and the lower protrusion 53L. In other words, the DC resistance can be reduced compared to when there is a clear boundary between the lower wiring main body 52L and the lower protrusion 53L.

[0093] (1-5) In the above embodiment, the inductor wiring 50 and conductive objects are not exposed on the side surface 11C of the element body 11. Specifically, for example, the current-carrying wiring for forming the inductor wiring 50 by electrolytic plating is not exposed. This prevents corrosion of the conductive objects exposed on the side surface 11C of the element body 11 from invading the inductor wiring 50 inside the element body 11.

[0094] (1-6) In the above embodiment, the side surface 53LS of the lower protrusion 53L is covered with the first insulating layer 31. This further improves the insulation between different portions of the lower protrusion 53L.

[0095] (1-7) In the above embodiment, the inductor component 10 has the first columnar wiring 61A and the second columnar wiring 61B. This allows the inductor wiring 50 to be electrically connected to an external electronic substrate or the like on the first main surface 11A or the second main surface 11B of the element body 11.

[0096] (1-8) In the above embodiment, the upper inductor wiring 51U and the first columnar wiring 61A are in contact with each other. Compared to when another metal layer is interposed between the upper inductor wiring 51U and the first columnar wiring 61A, the boundary surface from the upper inductor wiring 51U to the first columnar wiring 61A is reduced. This prevents the electrical resistance between the upper inductor wiring 51U and the first columnar wiring 61A from increasing. The same applies to the second columnar wiring 61B.

[0097] (1-9) In the above embodiment, the upper inductor wiring 51U includes an upper protrusion 53U. The side surface 53US of the upper protrusion 53U is covered with the second insulating layer 32. This improves the insulation between different portions of the upper protrusion 53U.

[0098] (1-10) In the above embodiment, the upper wiring main body 52U and the upper protrusion 53U are integrally molded. This prevents the electric field from being disturbed at the boundary between the upper wiring main body 52U and the upper protrusion 53U. In other words, the DC resistance can be reduced compared to when there is a clear boundary between the upper wiring main body 52U and the upper protrusion 53U.

[0099] (1-11) In the above embodiment, the lower resin wall 41 is in contact with the side surface 32S of the second insulating layer 32. This further improves the insulation between different portions of the inductor wiring 50 near the contact point between the lower inductor wiring 51L and the upper inductor wiring 51U.

[0100] (1-12) In the above embodiment, when forming the lower inductor wiring 51L, a wiring pattern is formed using the first insulating layer 31. This reduces the risk of short-circuiting between different portions of the lower inductor wiring 51L, even if the distance between these portions is narrow. Therefore, the narrow space within the element body 11 can be used more effectively than when a wiring pattern is formed using a seed.

[0101] The inductor wiring 50 is formed by the upper inductor wiring forming step S19 and the lower inductor wiring forming step S16. This reduces the occurrence of manufacturing errors compared to when an inductor wiring 50 with a large height is formed by a single electrolytic plating process.

[0102] (1-13) In the above embodiment, the second insulating layer 32 is formed when the upper inductor wiring 51U is formed. This reduces the possibility that different portions of the upper inductor wiring 51U will short-circuit due to manufacturing errors, etc. In other words, the insulation between different portions of the upper inductor wiring 51U can be improved.

[0103] (1-14) In the above embodiment, the substrate 99 for manufacturing the inductor component includes a base substrate 91. This allows the base substrate 91 to be gripped and handled during the manufacturing process of the inductor component 10. For example, this reduces the possibility of damaging the inductor component 10 compared to when the element body 11 is directly gripped and handled.

[0104] (1-15) In the above embodiment, the substrate 99 for manufacturing the inductor component includes an adhesive layer 92. This makes it easier to separate the seed layer 93 and the base substrate 91 compared to cutting the base substrate 91, etc. This reduces the effort required to manufacture the inductor component 10.

[0105] (1-16) In the above embodiment, the inductor wiring 50 is spiral-shaped, and the number of turns of the inductor wiring 50 is greater than one. In other words, the inductor wiring 50 has a portion where different portions are parallel to each other. Even in such a case, the inductor wiring 50 has the lower protrusion 53L, so that the cross-sectional area of ​​the inductor wiring 50 can be ensured without increasing the width of the inductor wiring 50. In other words, it is easy to prevent a short circuit between the parallel portions of the inductor wiring 50 while ensuring the cross-sectional area of ​​the inductor wiring 50.

[0106] (1-17) In the above embodiment, each pillar-shaped wiring includes a pillar portion and a lead-out portion. Each pillar-shaped portion is connected to the inductor wiring 50 via the lead-out portion, which is an integrally molded part with the pillar-shaped portion. In other words, no other conductive portion, such as the seed layer 93, is interposed between each pillar-shaped wiring and the inductor wiring 50. Therefore, the manufacturing process for the inductor component 10 can be simplified compared to when other conductive portions are present between each pillar-shaped wiring and the inductor wiring 50.

[0107] (1-18) In the above embodiment, when viewed in the third positive direction Z1, the outer edge of the first lead portion 63A is parallel to the outer edge of the first columnar portion 62A. The outer edge of the first lead portion 63A is also parallel to the outer edge of the upper-stage inner pad portion UP1. This simplifies the structure compared to when the outer edges are not parallel. The same applies to the outer edges of the second columnar wiring 61B and the upper-stage outer pad portion UP2.

[0108] (1-19) In the above embodiment, when viewed in the third positive direction Z1, the area enclosed by the outer edge of the first columnar section 62A is 1.3 times or less the area enclosed by the outer edge of the first lead section 63A. With this level of area difference, it is highly likely that the columnar section can be formed as designed by supplying power via the inductor wiring 50, without using a conductive section such as the seed layer 93. The same is true for the second columnar section 62B and the second lead section 63B.

[0109] (1-20) In the above embodiment, each lead portion is covered with a third insulating layer 33. This improves the insulation between each lead portion and the element body 11. (1-21) In the above embodiment, in the columnar wiring formation step S21, each columnar portion and lead portion are integrally molded. That is, in the manufacturing process of the inductor component 10, no other conductive portion, such as a seed layer 93, is interposed between each columnar wiring and the inductor wiring 50. Therefore, the manufacturing process of the inductor component 10 can be simplified compared to when other conductive portions are present between each columnar wiring and the inductor wiring 50.

[0110] <Inductor Component of Second Embodiment> Hereinafter, a second embodiment of an inductor component and a method for manufacturing an inductor component will be described.

[0111] (Overall Configuration) As shown in FIGS. 25 and 26 , the inductor component 110 of the second embodiment differs from the first embodiment mainly in that the inductor component 110 includes a second inductor wiring 150B and first to fourth external electrodes 81A to 81D, and that the element body 11 does not include the second interlayer magnetic layer 24 or the third interlayer magnetic layer 26. Furthermore, since the element body 11 does not include the second interlayer magnetic layer 24, the inductor component 110 does not include the second insulating layer 32. Furthermore, the upper inductor wiring does not include an upper protrusion. In other words, each upper inductor wiring of the second embodiment includes only an upper wiring body. Since the element body 11 does not include the third interlayer magnetic layer 26, the inductor component 110 does not include the second insulating layer 32. Furthermore, each columnar wiring does not include a lead-out portion. Note that in the following description, components similar to those of the first embodiment are designated by the same reference numerals, and descriptions thereof will be omitted or simplified.

[0112] As shown in Fig. 25, among the outer surfaces of the element body 11, the outer shape of the first main surface 11A and the outer shape of the second main surface 11B are approximately square. As shown in Fig. 26, the inductor component 110 has a first insulating layer 131. When the inductor component 110 is seen through from the third positive direction Z1 side, the first insulating layer 131 extends within the element body 11 on a plane parallel to the first main surface 11A. The first insulating layer 131 is in contact with the surface of the first magnetic layer 21 on the third positive direction Z1 side. In the third axis Z direction, the position of the first insulating layer 131 is the same as that of the first interlayer magnetic layer 22. In this embodiment, the inductor component 110 includes a first inductor wiring 150A and a second inductor wiring 150B, and accordingly, the first insulating layer 131 is present in two separate locations.

[0113] The inductor element 110 includes two inductor wirings. Specifically, the inductor element 110 includes a first inductor wiring 150A and a second inductor wiring 150B. The first inductor wiring 150A and the second inductor wiring 150B are located on the same layer in the third axis Z direction. When the inductor element 110 is seen through from the third positive direction Z1 side, the first inductor wiring 150A and the second inductor wiring 150B extend in an S-shape.

[0114] Hereinafter, the lower inductor wiring included in the first inductor wiring 150A will be referred to as a first lower inductor wiring 151LA, the lower wiring portion will be referred to as a first lower wiring portion LLA, the two lower pad portions will be referred to as first lower pad portions LPA, the lower wiring main portion will be referred to as a first lower wiring main portion 152LA, and the lower protrusion portion will be referred to as a first lower protrusion portion 153LA. The first lower pad portion LPA located on the first positive direction X1 side will be referred to as a first end lower pad portion LP1A, and the first lower pad portion LPA located on the first negative direction X2 side will be referred to as a second end lower pad portion LP2A.

[0115] The upper inductor wiring of the first inductor wiring 150A is referred to as a first upper inductor wiring 151UA, the upper wiring portion is referred to as a first upper wiring portion ULA, the two upper pad portions are referred to as first upper pad portions UPA, and the upper wiring main body is referred to as a first upper wiring main body 152UA. The first upper pad portion UPA located on the first positive direction X1 side is referred to as a first end upper pad portion UP1A, and the first upper pad portion UPA located on the first negative direction X2 side is referred to as a second end upper pad portion UP2A.

[0116] In the following description, the lower inductor wiring included in the second inductor wiring 150B will be referred to as the second lower inductor wiring 151LB, the lower wiring portion will be referred to as the second lower wiring portion LLB, the two lower pad portions will be referred to as the second lower pad portion LPB, the lower wiring main portion will be referred to as the second lower wiring main portion 152LB, and the lower protrusion will be referred to as the second lower protrusion portion 153LB. The second lower pad portion LPB located on the first positive direction X1 side will be referred to as the first end lower pad portion LP1B, and the second lower pad portion LPB located on the first negative direction X2 side will be referred to as the second end lower pad portion LP2B.

[0117] The upper inductor wiring of the second inductor wiring 150B is referred to as the second upper inductor wiring 151UB, the upper wiring portion is referred to as the second upper wiring portion ULB, the two upper pad portions are referred to as the second upper pad portion UPB, and the upper wiring main body is referred to as the second upper wiring main body 152UB. The second upper pad portion UPB located on the first positive direction X1 side is referred to as the first end upper pad portion UP1B, and the second upper pad portion UPB located on the first negative direction X2 side is referred to as the second end upper pad portion UP2B.

[0118] 27 , the outer surface of the first upper-stage inductor wiring 151UA on the third positive direction Z1 side is in contact with the outer surface of the fourth magnetic layer 27 on the third negative direction Z2 side and the outer surface of the columnar wiring on the third negative direction Z2 side. Furthermore, although not shown, the outer surface of the second upper-stage inductor wiring 151UB on the third positive direction Z1 side is in contact with the outer surface of the fourth magnetic layer 27 on the third negative direction Z2 side and the outer surface of the columnar wiring on the third negative direction Z2 side.

[0119] Furthermore, the maximum width 151UW of the first upper-stage inductor wiring 151UA is between −20% and +20% of the maximum width 152LW of the first lower-stage wiring main body 152LA. Note that the maximum width 152LW of the first lower-stage wiring main body 152LA is the maximum dimension of the first lower-stage wiring main body 152LA in a direction perpendicular to the center line of the first lower-stage inductor wiring 151LA and parallel to the first main surface 11A. The maximum width 151UW of the first upper-stage inductor wiring 151UA is the maximum dimension of the first upper-stage inductor wiring 151UA in a direction perpendicular to the center line of the first upper-stage inductor wiring 151UA and parallel to the first main surface 11A.

[0120] The first lower protrusion 153LA of the first inductor wiring 150A has the same configuration as the lower protrusion 53L of the inductor component 10 in the first embodiment. That is, as shown in FIG. 27 , the outer surface of the first lower protrusion 153LA on the third negative direction Z2 side is in contact with the element body 11. The side surface 153S of the first lower protrusion 153LA is in contact with the first insulating layer 131. The side surface 153S of the first lower protrusion 153LA refers to the outer surface of the first lower protrusion 153LA excluding the outer surface on the third negative direction Z2 side. However, because the first lower protrusion 153LA protrudes from the first lower wiring main body 152LA, it does not have an outer surface on the third positive direction Z1 side.

[0121] When viewed in the third positive direction Z1, the first lower protrusion 153LA extends along the first lower wire main body 152LA. Specifically, the first lower protrusion 153LA extends from the first end lower pad portion LP1A, through the first lower wire portion LLA, to the second end lower pad portion LP2A. In other words, the first lower protrusion 153LA extends over substantially the entire area of ​​the first lower wire main body 152LA.

[0122] 26 , when viewed in the third positive direction Z1, the first lower-stage protrusion 153LA is located within a range surrounded by the outer edge of the first lower-stage wiring main body 152LA. More specifically, as shown in FIG. 27 , when viewed in a cross section perpendicular to the first main surface 11A, the width of each portion of the first lower-stage inductor wiring 151LA is defined as the dimension parallel to the first main surface 11A. The width 153LW of the first lower-stage protrusion 153LA is smaller than the width of the first lower-stage wiring main body 152LA at the point where the first lower-stage protrusion 153LA is connected on the same cross section. In FIG. 27 , the width of the first lower-stage wiring main body 152LA is the maximum width 152LW. That is, the width 153LW of the first lower protrusion 153LA is smaller than the maximum width 152LW of the first lower wiring main body 152LA at the location where the first lower protrusion 153LA is connected on the same cross section.

[0123] 26 , the inductor element 110 includes four pillar-shaped wirings. Specifically, the inductor element 110 includes a first pillar-shaped wiring 161A, a second pillar-shaped wiring 161B, a third pillar-shaped wiring 161C, and a fourth pillar-shaped wiring 161D. Each pillar-shaped wiring has a substantially rectangular pillar shape corresponding to the shape of the upper pad portion to which the pillar-shaped wiring is connected.

[0124] In this embodiment, when the inductor element 110 is viewed in the third negative direction Z2, the outer edge of each columnar wiring substantially coincides with the outer edge of the corresponding pad. Therefore, the area of ​​the region surrounded by the outer edge of each columnar wiring is the same as the area of ​​the region surrounded by the outer edge of the pad to which the columnar wiring is connected. However, the areas being the same allows for a manufacturing error of, for example, 5%.

[0125] 27 , each pillar-shaped wiring is located in the same layer as the third magnetic layer 25 in the third axis Z direction. One end of the first pillar-shaped wiring 161A is in contact with a surface of the first upper-stage pad portion UPA that is parallel to the first main surface 11A of the first end upper-stage pad portion UP1A. In this embodiment, the difference between the dimension UP1AW of the first end upper-stage pad portion UP1A in the direction parallel to the first main surface 11A and the dimension 161AW of the first pillar-shaped wiring 161A in the direction parallel to the first main surface 11A is substantially zero.

[0126] Furthermore, the difference between the dimension UP1AW of the first end upper pad portion UP1A in the direction parallel to the first main surface 11A and the dimension LP1AW of the first end lower pad portion LP1A in the direction parallel to the first main surface 11A is approximately zero. Therefore, the difference between the dimension LP1AW of the first end lower pad portion LP1A in the direction parallel to the first main surface 11A and the dimension 161AW of the first columnar wiring 161A in the direction parallel to the first main surface 11A is also approximately zero.

[0127] One end of second columnar wiring 161B is in contact with a surface of first upper pad portion UPA that is parallel to first main surface 11A of second end upper pad portion UP2A. In this embodiment, the difference between a dimension UP2AW of second end upper pad portion UP2A in a direction parallel to first main surface 11A and a dimension 161BW of second columnar wiring 161B in a direction parallel to first main surface 11A is substantially zero.

[0128] Furthermore, the difference between the dimension UP2AW of the second end upper pad portion UP2A in the direction parallel to the first main surface 11A and the dimension LP2AW of the second end lower pad portion LP2A in the direction parallel to the first main surface 11A is approximately zero. Therefore, the difference between the dimension LP2AW of the second end lower pad portion LP2A in the direction parallel to the first main surface 11A and the dimension 161BW of the second columnar wiring 161B in the direction parallel to the first main surface 11A is also approximately zero.

[0129] One end of second columnar wiring 161B is in contact with a surface of first upper pad portion UPA that is parallel to first main surface 11A of second end upper pad portion UP2A. In this embodiment, the difference between a dimension UP2AW of second end upper pad portion UP2A in a direction parallel to first main surface 11A and a dimension 161BW of second columnar wiring 161B in a direction parallel to first main surface 11A is substantially zero.

[0130] Although not shown in the drawings, the same applies to third columnar wiring 161C and fourth columnar wiring 161D. In this embodiment, when viewed in a cross section perpendicular to first main surface 11A, the dimensions of each upper pad portion, the dimensions of the columnar wiring to which the upper pad portion is connected, and the dimensions of the lower pad portion located on the third negative direction Z2 side of the upper pad portion are the same in a direction parallel to first main surface 11A. However, the "same" dimensions allow for a manufacturing error of, for example, 5%.

[0131] 25, the inductor component 110 has four external electrodes: a first external electrode 81A, a second external electrode 81B, a third external electrode 81C, and a fourth external electrode 81D.

[0132] The first external electrode 81A is located on the first main surface 11A on the first positive direction X1 side and the second positive direction Y1 side with respect to the geometric center of the first main surface 11A. The second external electrode 81B is located on the first negative direction X2 side and the second positive direction Y1 side with respect to the geometric center on the first main surface 11A. The third external electrode 81C is located on the first main surface 11A on the first positive direction X1 side and the second negative direction Y2 side with respect to the geometric center on the first main surface 11A. The fourth external electrode 81D is located on the first negative direction X2 side and the second negative direction Y2 side with respect to the geometric center on the first main surface 11A.

[0133] The first external electrode 81A is in contact with a surface of the first columnar wiring 161A facing the third positive direction Z1. The second external electrode 81B is in contact with a surface of the second columnar wiring 161B facing the third positive direction Z1. The third external electrode 81C is in contact with a surface of the third columnar wiring 161C facing the third positive direction Z1. The fourth external electrode 81D is in contact with a surface of the fourth columnar wiring 161D facing the third positive direction Z1.

[0134] 28 , the manufacturing method of the inductor element 110 in the second embodiment differs from the manufacturing method of the first embodiment mainly in that it does not include a lower resin wall forming step S15, a second insulating layer forming step S17, an upper resin wall forming step S18, a third insulating layer forming step S20, and an insulating layer cutting step S22. Furthermore, the manufacturing method of the inductor element 110 in the second embodiment differs from the manufacturing method of the first embodiment in that it includes a first DFR forming step S115, a second DFR forming step S117, a third DFR forming step S119, and a DFR removing step S121.

[0135] 29 to 36 show only views corresponding to the cross-sectional view of the inductor element 110 shown in Fig. 27. That is, although Fig. 29 to 36 show only cross sections passing through the first inductor wiring 150A, the first columnar wiring 161A, and the second columnar wiring 161B, the same applies to cross sections passing through the second inductor wiring 150B, the third columnar wiring 161C, and the fourth columnar wiring 161D.

[0136] First, in the second embodiment, the base preparation step S111 to the first insulating layer formation step S114 are performed in the same manner as in the first embodiment. That is, as shown in FIG. 29 , after the first insulating layer formation step S114 of the second embodiment, an adhesive layer 92 is formed on the upper surface of the base substrate 91. A seed layer 93 is formed on the upper surface of the adhesive layer 92. At this time, the seed layer 93 is formed over the entire main surface 91A of the base substrate 91. A first insulating layer 131 is formed in two separate locations on the upper surface of the seed layer 93. The position and shape of the first opening 194 in the first insulating layer 131 correspond to the position and shape of the first lower-stage protrusion 153LA of the first lower-stage inductor wiring 151LA and the position and shape of the second lower-stage protrusion 153LB of the second lower-stage inductor wiring 151LB, which will be formed in a later step.

[0137] Next, as shown in FIG. 30 , a first DFR formation step S115 is performed. In the first DFR formation step S115, a first dry film resist DFR1 having two second openings 195 is formed on the upper surfaces of the seed layer 93 and the first insulating layer 131 by photolithography. The two second openings 195 have a predetermined pattern. Specifically, the position and shape of one second opening 195 correspond to the position and shape of the first lower wiring main body 152LA to be formed later. The position and shape of the other second opening 195 correspond to the position and shape of the second lower wiring main body 152LB to be formed later.

[0138] Next, as shown in FIG. 31 , a lower inductor wiring forming step S116 is performed. In the lower inductor wiring forming step S116, power is supplied to the seed layer 93 to form each lower inductor wiring by electrolytic plating. Specifically, a first lower wiring main body 152LA is formed in one of the second openings 195 of the first dry film resist DFR1, and a first lower protrusion 153LA protruding from the first lower wiring main body 152LA and extending along the first lower wiring main body 152LA is integrally formed in one of the first openings 194. Furthermore, a second lower wiring main body 152LB is formed in the other second opening 195, and a second lower protrusion 153LB protruding from the second lower wiring main body 152LB and extending along the second lower wiring main body 152LB is integrally formed in the other first opening 194.

[0139] Next, as shown in FIG. 32 , a second DFR formation process S117 is performed. In the second DFR formation process S117, a second dry film resist DFR2 having two third openings 196 is formed on the upper surface of the first dry film resist DFR1 by photolithography. The two third openings 196 have predetermined patterns. Specifically, the position and shape of one third opening 196 correspond to the position and shape of the first upper-stage inductor wiring 151UA to be formed later. The position and shape of the other third opening 196 correspond to the position and shape of the second upper-stage inductor wiring 151UB to be formed later.

[0140] Next, as shown in FIG. 33 , an upper-stage inductor wiring forming step S118 is performed. In the upper-stage inductor wiring forming step S118, power is supplied to the seed layer 93 to form each upper-stage inductor wiring by electrolytic plating. Specifically, a first upper-stage inductor wiring 151UA is formed in one of the third openings 196 of the second dry film resist DFR2. Furthermore, a second upper-stage inductor wiring 151UB is formed in the other of the third openings 196.

[0141] 34, a third DFR formation step S119 is performed. In the third DFR formation step S119, a third dry film resist DFR3 having four fourth openings 197 is formed on the upper surface of each upper inductor wiring and on the upper surface of the second dry film resist DFR2 by photolithography.

[0142] 35, a pillar-shaped wiring formation step S120 is performed. In the pillar-shaped wiring formation step S120, first pillar-shaped wirings 161A to fourth pillar-shaped wirings 161D are formed in the four fourth openings 197. The positions and shapes of the first pillar-shaped wirings 161A to fourth pillar-shaped wirings 161D correspond to the positions and shapes of the four fourth openings 197. In this way, the first inductor wiring 150A, the second inductor wiring 150B, and the first pillar-shaped wirings 161A to fourth pillar-shaped wirings 161D are formed.

[0143] Next, a DFR removal step S121 is performed as shown in Fig. 36. In the DFR removal step S121, the first dry film resist DFR1, the second dry film resist DFR2, and the third dry film resist DFR3 are all removed by etching.

[0144] 28 , after the DFR removal step S121 is performed, the steps from the first element body formation step S122 to the singulation step S127 are performed in the same manner as in the first embodiment. This results in the manufacture of the inductor component 110 of the second embodiment. Note that the state from the upper-stage inductor wiring formation step S118 to the removal of the base substrate 91 in the seed layer removal step S124 can be treated as a substrate 199 for inductor component manufacture.

[0145] (Effects of the Second Embodiment) According to the second embodiment, in addition to the effects (1-1) to (1-7) and (1-10) to (1-15) described above, the following effects are further achieved.

[0146] (2-1) In the above embodiment, the inductor element 110 includes a second inductor wiring 150B in addition to a first inductor wiring 150A. This allows the mounting area to be reduced compared to mounting two inductor elements each including one inductor wiring.

[0147] (2-2) In the above embodiment, when viewed in a cross section perpendicular to the first main surface 11A, there is no significant difference between the dimensions of each upper pad portion and the dimensions of each columnar wiring in a direction parallel to the first main surface 11A. Therefore, the DC resistance caused by this difference can be reduced compared to when the differences in the dimensions are large.

[0148] (2-3) In the above embodiment, each upper pad portion and each columnar wiring are in contact with each other, and the size of the bottom surface of each columnar wiring is smaller than the size of the top surface of the pad portion to which the columnar wiring is connected. As a result, even if a manufacturing error occurs in the position of the second dry film resist DFR2 and the position of the third dry film resist DFR3 during the manufacturing process of the inductor component 110, the top surface of each upper pad portion and each columnar wiring can be formed, so that the connection cross-sectional area can be reliably secured.

[0149] (2-4) In the above embodiment, the maximum width 151UW of the first upper-stage inductor wiring 151UA is between −20% and +20% of the maximum width 152LW of the first lower-stage wiring main body 152LA. If this ratio is less than −20%, the DC resistance of the first upper-stage inductor wiring 151UA may be high. Furthermore, if this ratio is greater than 20%, manufacturing errors may be more likely to occur during the manufacture of the inductor component 110 due to factors such as difficulty in press-fitting the magnetic material. Therefore, by making the maximum width 151UW of the first upper-stage inductor wiring 151UA and the maximum width 152LW of the first lower-stage wiring main body 152LA approximately the same, the DC resistance of the first upper-stage inductor wiring 151UA is reduced while preventing difficulty in press-fitting the magnetic material between the first lower-stage wiring main body 152LA and the first upper-stage inductor wiring 151UA. These points also apply to the second inductor wiring 150B.

[0150] <Modifications> The above-described embodiments and the following modifications can be combined with each other to the extent that no technical contradiction occurs. For example, a modification of the first embodiment can be combined with the second embodiment to the extent that no technical contradiction occurs.

[0151] (Regarding Modifications of the First Embodiment) The shape of the element body 11 is not limited to that of the above embodiment. Furthermore, the element body 11 may not have a portion of the magnetic layer 20 as long as it functions as the inductor component 10.

[0152] The metal magnetic powder that is the material of the element body 11 is not limited to FeSiCr-based magnetic powder. For example, it may be FeCo-based, FeSiAr-based, iron oxide-based, or a combination of these. The organic resin that is the material of the element body 11 may be epoxy-based, imide-based, liquid crystal polymer-based, acrylic-based, phenol-based, or a combination of these, or may contain inorganic fillers in addition to these materials. The material of the element body 11 may also be a non-magnetic material.

[0153] The material of the second insulating layer 32 may contain a filler in addition to resin. The inclusion of a filler provides an uneven surface to the second insulating layer 32. This improves adhesion between the side surface 53US of the upper protrusion 53U and the second insulating layer 32. Therefore, the insulation between different portions of the inductor wiring 50 can be improved near the contact point between the lower wiring main body 52L and the upper protrusion 53U. Furthermore, adjusting the filler content makes it possible to adjust the linear expansion coefficient. This increases the design freedom of the inductor component 10. The same applies to the first insulating layer 31 and the third insulating layer 33, which may contain a filler.

[0154] The shape, number, position, and other configurations of the inductor wiring 50 are not limited to those of the above embodiment. They may be changed as appropriate depending on the shape of the element body 11 and the application of the inductor component 10. The inductor wiring 50 may be exposed on the side surface 11C of the element body 11.

[0155] The material of the inductor wiring 50 is not limited to a conductor primarily composed of copper, but may also be a conductor primarily composed of Ag, Al, or Au. The total height 50H of the inductor wiring 50 may be less than twice the minimum width 52LW of the lower wiring body 52L. Even in this case, since the lower inductor wiring 51L has the lower protrusion 53L, the cross-sectional area is relatively large, and the DC resistance can be reduced.

[0156] The lower protrusion 53L does not have to extend continuously from the lower inner pad portion LP1 to the lower outer pad portion LP2. For example, it may be a chain line extending intermittently along the inductor wiring 50. In other words, the lower protrusion 53L may be partially interrupted. The same applies to the upper protrusion 53U.

[0157] The lower protrusion 53L and the lower wiring main body 52L do not have to be integrally molded. For example, after the lower protrusion 53L is formed by electrolytic plating, the electrolytic plating is stopped and then restarted to form the lower wiring main body 52L. Strictly speaking, this may result in an interface between the lower protrusion 53L and the lower wiring main body 52L. Even in this case, the lower wiring main body 52L can be considered to essentially protrude from the lower protrusion 53L. Furthermore, when the lower protrusion 53L and the lower wiring main body 52L are formed as separate molded bodies, the materials of the two do not necessarily have to be the same. The same applies to the upper protrusion 53U.

[0158] The side surface 53LS of the lower protrusion 53L does not have to be in contact with the first insulating layer 31. For example, another metal layer may be interposed between the lower protrusion 53L and the first insulating layer 31. This also applies to the upper protrusion 53U and the second insulating layer 32.

[0159] The dimension of the lower protrusion 53L in the direction perpendicular to the first main surface 11A may be less than the dimension of the first insulating layer 31. In this case, the tip of the lower protrusion 53L does not protrude from the first insulating layer 31 in the third negative direction Z2. Therefore, even if a manufacturing error or the like occurs, the tip of the lower protrusion 53L is unlikely to spread in a direction parallel to the first main surface 11A. As a result, the tip of the lower protrusion 53L is prevented from unintentionally shorting to another conductive part. The same applies to the upper protrusion 53U.

[0160] The inductor component 10 does not have to have the lower resin wall 41 or the upper resin wall 42. The inductor component 10 does not have to have a columnar wiring. For example, the inductor wiring 50 may be exposed from the side surface 11C of the element body 11 and connected to the external electrode.

[0161] The first lead portion 63A and the first columnar portion 62A do not have to be integrally molded. For example, after forming the first lead portion 63A by electrolytic plating, the electrolytic plating is stopped and then restarted to form the first columnar portion 62A. Strictly speaking, this may result in an interface between the first lead portion 63A and the first columnar portion 62A. Even in this case, the first columnar portion 62A can be considered to essentially protrude from the first lead portion 63A. Furthermore, when the first lead portion 63A and the first columnar portion 62A are formed as separate molded parts, the materials of the two need not necessarily be the same. The same applies to the second lead portion 63B and the second columnar portion 62B.

[0162] The configuration of each lead portion is not limited to the example of the above embodiment. For example, the outer edge of the first lead portion 63A does not have to be parallel to the outer edge of the first columnar portion 62A. The first lead portion 63A does not have to be in contact with the outer surface of the upper inner pad portion UP1, which is the end of the inductor wiring 50, that is parallel to the first main surface 11A. Furthermore, the outer edge of the first lead portion 63A does not have to be parallel to the outer edge of the upper inner pad portion UP1. This also applies to the second lead portion 63B and the upper outer pad portion UP2.

[0163] When viewed in the third positive direction Z1, the area enclosed by the outer edge of the first columnar section 62A may be more than 1.3 times larger than the area enclosed by the outer edge of the first lead section 63A. Even in this case, since the first columnar wiring 61A has the first lead section 63A, at least the effect described in (1-1) can be obtained. The same applies to the second lead section 63B.

[0164] The side surface 63AS of the first lead portion 63A does not have to be in contact with the third insulating layer 33. For example, another member may be interposed between the first lead portion 63A and the third insulating layer 33. This also applies to the second lead portion 63B.

[0165] 23 , the inductor component 10 may not include the first insulating layer 31 as long as it includes the second insulating layer 32. The inductor component 10 may also include a third insulating layer 33 that covers the surfaces of the inductor wiring 50 and the lower resin wall 41 that face the third negative direction Z2.

[0166] The inductor component 10 does not need to include the external electrodes and the solder resist 70. For example, the columnar wirings may be exposed from the first main surface 11A. This allows the size of the inductor component 10 to be reduced.

[0167] In the method for manufacturing the inductor component 10, the order of the steps may be changed as long as the inductor component 10 can be manufactured. For example, the solder resist formation step S24 may be performed after the second element body formation step S26.

[0168] The material of the seed layer 93 is not limited to the examples in the above embodiment. For example, the seed layer 93 may be a single layer of copper or a single layer of silver, or may have multiple layers of titanium and copper, etc. The material of the seed layer 93 and the material of the lower protrusion 53L may be different. For example, the material of the seed layer 93 may be silver, and the material of the inductor wiring 50 including the lower protrusion 53L may be copper. This allows for a high etch rate when the inductor wiring 50 is peeled off from the seed layer 93 by etching. The same applies to the substrate 99 for manufacturing inductor components.

[0169] In the adhesive layer forming step S12 to the solder resist forming step S24, the inductor wiring 50 and the like may be formed on both surfaces of the base substrate 91. In this case, when the inductor wiring 50 and the like is formed on the third negative direction Z2 side of the base substrate 91, each step may be performed with the third negative direction Z2 as the upward direction.

[0170] The adhesive layer forming step S12 may be omitted. The seed layer 93 may be formed directly on the upper surface of the base substrate 91. In other words, the substrate 99 for manufacturing inductor elements does not need to include the adhesive layer 92.

[0171] In the first insulating layer forming step S14, a negative photosensitive resin may be used as the material for the first insulating layer 31. In this case, the degree of photocuring of the portion of the first insulating layer 31 to be removed in the insulating layer cutting step S22 may be reduced to make that portion easier to peel off in the insulating layer cutting step S22.

[0172] Depending on the configuration of the inductor component 10 to be manufactured, one or more steps selected from the second insulating layer forming step S17, the columnar wiring forming step S21, the solder resist forming step S24, the second element body forming step S26, and the external electrode forming step S27 may be omitted.

[0173] The third insulating layer forming step S20 may be omitted, and the pillar-shaped wiring forming step S21 may be performed. In this case, in the pillar-shaped wiring forming step S21, an auxiliary wall may be formed on the outer surface of the upper-stage inductor wiring 51U on the third positive direction Z1 side, and each pillar-shaped wiring may be formed.

[0174] In the insulating layer cutting step S22, the method for removing a portion of the first insulating layer 31 is not limited to a method using a laser. For example, a portion of the first insulating layer 31 may be removed by sandblasting. In this case, it is preferable that the third insulating layer 33 is thicker than the first insulating layer 31. Alternatively, it is preferable that the sandblasting resistance of the third insulating layer 33 is higher than that of the first insulating layer 31.

[0175] - If the second element body forming process S26 is omitted, for example, an insulating layer may be formed on the lower surfaces of the lower protrusion 53L, the first insulating layer 31, and the magnetic layer 20 formed in the first element body forming process S23.

[0176] In the external electrode forming step S27, the method for forming each external electrode is not limited to the example in the above embodiment. For example, copper plating may not be performed. An inductor component 210 in one example of a combination of modified examples will be described with reference to FIGS. 37 and 38 .

[0177] 37 , an inductor component 210 in one example of the modified example has five external electrodes. Specifically, the inductor component 210 has a first external electrode 81A on the first negative direction X2 side and the second positive direction Y1 side of the first main surface 11A of the element body 11. The inductor component 210 has a second external electrode 81B on the first positive direction X1 side and the second positive direction Y1 side of the first main surface 11A. The inductor component 210 has a third external electrode 81C on the first negative direction X2 side and the second negative direction Y2 side of the first main surface 11A. The inductor component 210 has a fourth external electrode 81D on the first positive direction X1 side and the second negative direction Y2 side of the first main surface 11A. The inductor component 210 has a fifth external electrode 81E at a position including approximately the geometric center of the first main surface 11A.

[0178] 38 , an inductor element 210 in one example of the modified example has four inductor wirings 50. Specifically, the inductor element 210 has a first inductor wiring 51A on the first negative direction X2 side and the second positive direction Y1 side inside the element body 11. The inductor element 210 has a second inductor wiring 51B on the first positive direction X1 side and the second positive direction Y1 side inside the element body 11. The inductor element 210 has a third inductor wiring 51C on the first negative direction X2 side and the second negative direction Y2 side inside the element body 11. The inductor element 210 has a fourth inductor wiring 51D on the first positive direction X1 side and the second negative direction Y2 side inside the element body 11.

[0179] In this example of the modification, specifically, the upper outer pad portion UP2A of the first inductor wiring 51A is connected to the first external electrode 81A. The upper outer pad portion UP2B of the second inductor wiring 51B is connected to the second external electrode 81B. The upper outer pad portion UP2C of the third inductor wiring 51C is connected to the third external electrode 81C. The upper outer pad portion UP2D of the fourth inductor wiring 51D is connected to the fourth external electrode 81D. The upper inner pad portion UP1A of the first inductor wiring 51A, the upper inner pad portion UP1B of the second inductor wiring 51B, the upper inner pad portion UP1C of the third inductor wiring 51C, and the upper inner pad portion UP1D of the fourth inductor wiring 51D are connected to the fifth external electrode 81E. Therefore, the fifth external electrode 81E, which is one of the plurality of external electrodes, is connected to both the first end of the first inductor wiring 51A and the first end of the second inductor wiring 51B. This prevents a potential difference from occurring between the external electrodes connected to the respective inductor wirings. An electronic component having such a configuration is suitable, for example, as an inductor used in a multi-phase DC / DC converter.

[0180] (Regarding a Modification of the Second Embodiment) As shown in FIG. 39 , in a direction perpendicular to the first main surface 11A, the dimension 153AH of the first lower protrusion 153LA may be less than the dimension 131H of the first insulating layer 131. In this case, the tip of the first lower protrusion 153LA does not protrude from the first insulating layer 131 in the third negative direction Z2. Therefore, even if a manufacturing error or the like occurs, the tip of the first lower protrusion 153LA is unlikely to expand in a direction parallel to the first main surface 11A. As a result, the tip of the first lower protrusion 153LA is prevented from unintentionally shorting to another conductive part. The same applies to the second lower protrusion 153LB.

[0181] 39 , the inductor element 110 may have an insulating coating CF that covers the side surfaces of the first lower-stage wiring main body 152LA, the first upper-stage inductor wiring 151UA, the first insulating layer 131, the first columnar wiring 161A, and the second columnar wiring 161B. This improves the insulation between the inductor wirings and between the columnar wirings. The same applies to the second inductor wiring 150B.

[0182] The maximum width 151UW of the first upper-stage inductor wiring 151UA may be less than −20% of the maximum width 152LW of the first lower-stage wiring main body 152LA, or may be greater than +20% of the maximum width 152LW of the first lower-stage wiring main body 152LA. Even in this case, at least the effect described in (1-1) can be obtained.

[0183] 39 , the inductor component 110 does not need to include external electrodes and a solder resist 70. In this case, for example, it is sufficient that each columnar wiring is exposed from the first main surface 11A. This allows the size of the inductor component 110 to be reduced. In this example, the surface of the columnar wiring on the third positive direction Z1 side functions as an external electrode.

[0184] The first DFR formation step S115 and the second DFR formation step S117 may be performed in one step. The electrical conductivity of the outer surface of the first lower-stage protrusion 153LA on the third negative direction Z2 side may be lower than the electrical conductivity of the first lower-stage wiring main body 152LA or the first upper-stage inductor wiring 151UA. For example, the tip of the first lower-stage protrusion 153LA may be oxidized by heat treatment to reduce the electrical conductivity. This improves the insulation between the first inductor wiring 150A and the element body 11. The same applies to the second lower-stage protrusion 153LB and the second inductor wiring 150B.

[0185] The size of the end face of each pillar-shaped wire on the third negative direction Z2 side may be smaller than the size of the face of the pad to which the pillar-shaped wire is connected on the third positive direction Z1 side. In this case, when viewed in a cross section perpendicular to the first main surface 11A, the difference between the dimension UP1AW of the first end upper pad portion UP1A of the first upper pad portion UPA and the dimension 161AW of the first pillar-shaped wire 161A in the direction parallel to the first main surface 11A is preferably 20 μm or less. Similarly, when viewed in a cross section perpendicular to the first main surface 11A, the difference between the dimension UP2AW of the second end upper pad portion UP2A of the second upper pad portion UPB and the dimension 161BW of the second pillar-shaped wire 161B in the direction parallel to the first main surface 11A is preferably 20 μm or less.

[0186] This means that even if some manufacturing error occurs in the position of the first dry film resist DFR1 and the position of the second dry film resist DFR2 during the manufacturing process of the inductor component 110, the columnar wiring can be kept within the range of the corresponding pad portion.

[0187] However, even if the difference is greater than 20 μm, at least the effect described in (1-1) can be obtained by having each wiring body have a protrusion. This also applies to the second upper pad portion UPB.

[0188] The outer surface of the first lower-step protrusion 153LA on the third negative direction Z2 side does not need to be in contact with the element body 11. For example, as shown in FIG. 40 , the inductor component 110 may include a metal layer ML covering the outer surface of the first lower-step protrusion 153LA on the third negative direction Z2 side. In this case, when viewed in the third positive direction Z1, the metal layer ML preferably extends along the first lower-step protrusion 153LA. For example, selecting nickel as the material for the metal layer ML can suppress oxidation of the outer surface of the first lower-step protrusion 153LA on the third negative direction Z2 side and deterioration of the outer surface of the first insulating layer 131 on the third negative direction Z2 side. Note that the metal layer ML may be formed by removing the base substrate 91 and etching the seed layer 93 so that the seed layer 93 covers the first lower-step protrusion 153LA, instead of performing the seed layer removal step S124. Furthermore, it is preferable that the electrical conductivity of the metal layer ML is smaller than that of the first inductor wiring 150A, thereby improving the insulation between the first inductor wiring 150A and the element body 11. The same applies to the second inductor wiring 150B and the second lower protrusion 153LB.

[0189] 41 , after the DFR removal step S121 and before the first element body formation step S122, a step of covering the side surfaces of each inductor wiring and each columnar wiring with an insulating coating CF may be performed. The insulating coating CF may be formed by, for example, chemical vapor deposition (CVD). This improves the insulation between the inductor wirings and between the columnar wirings.

[0190] <Supplementary Notes> The technical concepts that can be derived from the above embodiments and modified examples are described below. [1] An element body including a magnetic material and having a planar main surface, an insulating layer located within the element body and extending on a plane parallel to the main surface, a lower inductor wiring extending within the element body parallel to the main surface, and an upper inductor wiring extending within the element body parallel to the main surface, wherein when one direction perpendicular to the main surface is defined as a positive direction and the direction opposite to the positive direction is defined as a negative direction, the lower inductor wiring comprises: a lower wiring main body extending on an outer surface of the insulating layer on the positive direction side, and a protrusion protruding from the outer surface of the lower wiring main body on the negative direction side to the negative direction, the outer surface of the negative direction side of the lower wiring main body and the outer surface of the insulating layer are in contact, and when viewed see-through in the positive direction, the protrusion is located within a range surrounded by an outer edge of the lower wiring main body and extends along the lower wiring main body, an inductor component in which, when viewed in cross section perpendicular to the main surface, a dimension of the protrusion in a direction parallel to the main surface is smaller than a dimension of the lower wiring main body in a direction parallel to the main surface at the point where the protrusion is connected, the upper inductor wiring extends on the outer surface of the lower wiring main body on the positive direction side, along the lower wiring main body, and the outer surface of the upper inductor wiring on the negative direction side is in contact with the surface of the lower inductor wiring on the positive direction side.

[0191] [2] The inductor component according to [1], wherein the sum of the maximum dimension of the lower inductor wiring and the maximum dimension of the upper inductor wiring in a direction perpendicular to the main surface is defined as a total height dimension, and the minimum dimension of the lower wiring main body in a direction perpendicular to the center line of the lower wiring main body and parallel to the main surface is defined as a minimum width dimension, and the total height dimension is at least twice the minimum width dimension.

[0192] [3] The inductor component according to [1] or [2], wherein when the maximum dimension of the lower-stage wiring main body in a direction perpendicular to the center line of the lower-stage inductor wiring and parallel to the main surface is defined as the maximum width dimension of the lower-stage wiring main body, and the maximum dimension of the upper-stage inductor wiring in a direction perpendicular to the center line of the upper-stage inductor wiring and parallel to the main surface is defined as the maximum width dimension of the upper-stage inductor wiring, the maximum width dimension of the upper-stage inductor wiring is −20% or more and +20% or less of the maximum width dimension of the lower-stage wiring main body.

[0193] [4] The inductor component according to any one of [1] to [3], wherein the lower wiring main body and the protruding portion are integrally molded.

[0194] [5] An inductor component according to any one of [1] to [4], wherein, when the outer surfaces of the element body excluding the main surface and the surface opposite to the main surface are defined as side surfaces of the element body, the lower inductor wiring and the conductive object electrically connected to the lower inductor wiring, and the upper inductor wiring and the conductive object electrically connected to the upper inductor wiring are not exposed on the side surfaces of the element body.

[0195] [6] An inductor component according to any one of [1] to [5], wherein when the outer surfaces of the protrusion, excluding the outer surface on the negative side, are considered to be side surfaces of the protrusion, the side surfaces of the protrusion are in contact with the insulating layer.

[0196] [7] The inductor component according to [6], wherein the dimension of the protrusion in a direction perpendicular to the main surface is less than the dimension of the insulating layer.

[0197] [8] The inductor component according to any one of [1] to [7], further comprising a columnar wiring connected to the outer surface of the upper-stage inductor wiring on the positive side and extending in a direction intersecting the main surface within the element body.

[0198] [9] The inductor component according to [8], wherein the pillar-shaped wiring is in contact with the outer surface of the upper-stage inductor wiring on the positive direction side.

[0199]

[10] The inductor component according to [8] or [9], further comprising an insulating coating covering the side surfaces of the lower wiring main body, the side surfaces of the upper inductor wiring, the side surfaces of the pillar-shaped wiring except for the positive side surface and the negative side surface, and the side surfaces of the insulating layer except for the positive side surface and the negative side surface, when the outer surfaces of the lower wiring main body, the outer surfaces of the upper inductor wiring except for the positive side surface and the negative side surface are the side surfaces of the upper inductor wiring, the outer surfaces of the pillar-shaped wiring except for the positive side surface and the negative side surface are the side surfaces of the insulating layer.

[0200]

[11] When the insulating layer is a first insulating layer and the protrusion is a lower protrusion, the element further comprises a second insulating layer located within the element body and parallel to the main surface, the upper inductor wiring comprises: an upper wiring main body extending on an outer surface of the second insulating layer on the positive side; and an upper protrusion protruding from the outer surface of the upper wiring main body on the negative side to the negative side, when viewed in the positive direction, the upper protrusion is located within a range surrounded by an outer edge of the upper wiring main body and extends along the upper wiring main body, the outer surface of the upper wiring main body on the negative side and the outer surface of the second insulating layer are in contact with each other, when viewed in a cross section perpendicular to the main surface, a dimension of the upper protrusion in a direction parallel to the main surface is smaller than a dimension of the upper wiring main body in a direction parallel to the main surface at a location where the upper protrusion is connected, The inductor component according to any one of [1] to

[10] , wherein the negative side surface of the upper protrusion is in contact with the positive side outer surface of the lower wiring body.

[0201]

[12] The inductor component according to

[11] , wherein the upper wiring body and the upper protrusion are integrally molded.

[0202]

[13] The inductor component according to

[11] or

[12] , wherein the material of the second insulating layer includes a resin and a filler that is a powder of a crystalline material.

[0203]

[14] The inductor component according to any one of

[11] to

[13] , further comprising: a lower resin wall covering the side surface of the lower wiring body, wherein the lower resin wall is in contact with the side surface of the second insulating layer, when the outer surfaces of the lower wiring body excluding the outer surface on the positive direction side and the outer surface on the negative direction side are defined as side surfaces of the lower wiring body, and the outer surfaces of the second insulating layer excluding the outer surface on the positive direction side and the outer surface on the negative direction side are defined as side surfaces of the second insulating layer.

[0204]

[15] a seed layer forming step of forming a conductive seed layer on a main surface of a base substrate; an insulating layer forming step of forming an insulating layer having an opening of a predetermined wiring pattern on the seed layer; a lower resin wall forming step of forming a lower resin wall on the insulating layer along an outer edge of the opening; a lower inductor wiring forming step of forming a lower wiring main body in a space surrounded by the lower resin wall by electrolytic plating by supplying power to the seed layer, and forming a lower protrusion in the opening that protrudes from the lower wiring main body and extends along the lower wiring main body; an upper resin wall forming step of forming an upper resin wall above the lower wiring main body along the outer edge of the lower wiring main body; an upper inductor wiring forming step of forming an upper inductor wiring in the space surrounded by the upper resin wall by electrolytic plating by supplying power to the seed layer; and an element forming step of forming a magnetic layer containing a magnetic material around the lower wiring main body, the lower protrusion, and the upper inductor wiring after the upper inductor wiring forming step. a seed layer removal step of removing the seed layer after the element body formation step.

[0205]

[16] A method for manufacturing an inductor component according to

[15] , comprising: a second insulating layer forming step of forming a second insulating layer having a second opening along the lower wiring body on the lower wiring body after the lower inductor wiring forming step and before the upper resin wall forming step; an upper resin wall forming step of forming the upper resin wall along an outer edge of the second opening in the second insulating layer above the lower wiring body; an upper inductor wiring forming step of forming an upper wiring body in a space surrounded by the upper resin wall by electrolytic plating by supplying power to the seed layer, and forming an upper protruding portion in the second opening that protrudes from the upper wiring body and extends along the upper wiring body; and an element body forming step of forming the magnetic layer made of a magnetic material around the lower wiring body, the lower protruding portion, the upper wiring body, and the upper protruding portion.

[0206]

[17] A semiconductor device comprising: a base substrate; a conductive seed layer located on a main surface side of the base substrate; an insulating layer located on the seed layer and extending parallel to the main surface of the base substrate; a lower inductor wiring located on the insulating layer and extending parallel to the main surface of the base substrate; and an upper inductor wiring located on the lower inductor wiring and extending parallel to the main surface of the base substrate, wherein, when one direction orthogonal to the main surface of the base substrate is defined as a positive direction and a direction opposite to the positive direction is defined as a negative direction, the lower inductor wiring comprises: a lower wiring main body extending on an outer surface of the insulating layer on the positive direction side; and a protruding portion protruding from the outer surface of the lower wiring main body on the negative direction side to the negative direction, when seen through in the positive direction, the protruding portion extends along the lower wiring main body, and the negative direction side surface of the protruding portion is in contact with the seed layer, and the upper inductor wiring A substrate for manufacturing an inductor component, the substrate extending along the outer surface of the lower wiring body on the positive side, and the negative side surface of the upper inductor wiring in contact with the positive side surface of the lower inductor wiring.

[0207]

[18] The substrate for manufacturing an inductor element according to

[17] , wherein the material of the seed layer is different from the material of the protrusion.

[0208]

[19] The substrate for manufacturing an inductor component according to

[17] or

[18] , further comprising an adhesive layer interposed between the base substrate and the seed layer, wherein the material of the adhesive layer is a resin having adhesive properties.

[0209] DESCRIPTION OF SYMBOLS 10...Inductor component 11...Element body 11A...First main surface 20...Magnetic layer 31...First insulating layer 32...Second insulating layer 33...Third insulating layer 41...Lower resin wall 42...Upper resin wall 50...Inductor wiring 51L...Lower inductor wiring 52L...Lower wiring body LL...Lower wiring portion LP...Lower pad portion 53L...Lower protrusion portion 51U...Upper inductor wiring 52U...Upper wiring body UL...Upper wiring portion UP...Upper pad portion 53U...Upper protrusion portion CL...Center line 61A...First columnar wiring 62A...First columnar portion 63A...First lead-out portion 61B...Second columnar wiring 62B...Second columnar portion 63B...Second lead-out portion 70...Solder resist 81A...First external electrode 81B...Second external electrode 91...Base substrate 92...Adhesive layer 93...Seed layer 94...First opening 95...Second opening 96...Third opening 99...Substrate for manufacturing inductor component 110...Inductor component 131...First insulating layer 150A...First inductor wiring 151LA...First lower inductor wiring 152LA...First lower wiring body LLA...First lower wiring portion LPA...First lower pad portion 153LA...First lower protrusion portion 151UA...First upper inductor wiring ULA...First upper wiring portion UPA...First upper pad portion 150B...Second inductor wiring 151LB...Second lower inductor wiring 152LB...Second lower wiring body LLB...Second lower wiring portion LPB...Second lower pad portion 153LB...second lower protrusion portion 151UB...second upper inductor wiring ULB...second upper wiring portion UPB...second upper pad portion 161A...first pillar-shaped wiring 161B...second pillar-shaped wiring 161C...third pillar-shaped wiring 161D...fourth pillar-shaped wiring

Claims

1. An element body including a magnetic material and having a planar main surface; an insulating layer located within the element body and extending on a plane parallel to the main surface; a lower inductor wiring extending parallel to the main surface within the element body; and an upper inductor wiring extending parallel to the main surface within the element body, wherein when one direction perpendicular to the main surface is defined as a positive direction and a direction opposite to the positive direction is defined as a negative direction, the lower inductor wiring comprises: a lower wiring main body extending on an outer surface of the insulating layer on the positive direction side; and a protrusion protruding from the outer surface of the lower wiring main body on the negative direction side to the negative direction side, wherein the outer surface of the lower wiring main body on the negative direction side and the outer surface of the insulating layer on the positive direction side are in contact with each other, and when viewed see-through in the positive direction, the protrusion is located within a range surrounded by an outer edge of the lower wiring main body and extends along the lower wiring main body, an inductor component, wherein, when viewed in cross section perpendicular to the main surface, a dimension of the protrusion in a direction parallel to the main surface is smaller than a dimension of the protrusion in a direction parallel to the main surface of the lower-stage wiring main body at a point where the protrusion is connected, the upper-stage inductor wiring extends on an outer surface of the lower-stage wiring main body on the positive direction side, along the lower-stage wiring main body, and the outer surface of the negative direction side of the upper-stage inductor wiring is in contact with the surface of the lower-stage inductor wiring on the positive direction side.

2. An inductor component as described in claim 1, wherein the sum of the maximum dimension of the lower inductor wiring and the maximum dimension of the upper inductor wiring in a direction perpendicular to the main surface is defined as a total height dimension, and the minimum dimension of the lower wiring main body in a direction perpendicular to the center line of the lower wiring main body and parallel to the main surface is defined as a minimum width dimension, and the total height dimension is at least twice the minimum width dimension.

3. An inductor component according to claim 1 or 2, wherein when the maximum dimension of the lower-stage wiring main body in a direction perpendicular to the center line of the lower-stage inductor wiring and parallel to the main surface is defined as the maximum width dimension of the lower-stage wiring main body, and the maximum dimension of the upper-stage inductor wiring in a direction perpendicular to the center line of the upper-stage inductor wiring and parallel to the main surface is defined as the maximum width dimension of the upper-stage inductor wiring, the maximum width dimension of the upper-stage inductor wiring is not less than -20% and not more than +20% of the maximum width dimension of the lower-stage wiring main body.

4. The inductor component according to any one of claims 1 to 3, wherein the lower wiring body and the protrusion are integrally molded.

5. An inductor component as claimed in any one of claims 1 to 4, wherein when the outer surfaces of the element body excluding the main surface and the surface opposite to the main surface are defined as side surfaces of the element body, the lower inductor wiring and a conductive object electrically connected to the lower inductor wiring, and the upper inductor wiring and a conductive object electrically connected to the upper inductor wiring are not exposed on the side surfaces of the element body.

6. An inductor component as claimed in any one of claims 1 to 5, wherein when the outer surfaces of the protrusion excluding the outer surface on the negative side are considered to be the side surfaces of the protrusion, the side surfaces of the protrusion are in contact with the insulating layer.

7. The inductor component according to claim 6, wherein a dimension of the protrusion in a direction perpendicular to the main surface is less than a dimension of the insulating layer.

8. An inductor component according to any one of claims 1 to 7, further comprising a columnar wiring connected to the outer surface on the positive side of the upper stage inductor wiring and extending within the element body in a direction intersecting the main surface.

9. The inductor component according to claim 8, wherein the pillar-shaped wiring is in contact with an outer surface of the upper inductor wiring on the positive direction side.

10. An inductor component according to claim 8 or claim 9, further comprising an insulating coating covering the side surfaces of the lower wiring main body, the side surfaces of the upper inductor wiring, the side surfaces of the upper inductor wiring, the side surfaces of the columnar wiring, the side surfaces of the columnar wiring, and the side surfaces of the insulating layer, the side surfaces of the lower wiring main body, the side surfaces of the upper inductor wiring, the side surfaces of the columnar wiring, and the side surfaces of the insulating layer, the side surfaces of the upper inductor wiring, and the side surfaces of the columnar wiring, the side surfaces of the columnar wiring.

11. When the insulating layer is a first insulating layer and the protrusion is a lower protrusion, the element further comprises a second insulating layer located within the element body and parallel to the main surface, the upper inductor wiring comprises: an upper wiring main body extending on an outer surface of the second insulating layer on the positive direction side; and an upper protrusion protruding from the outer surface of the upper wiring main body on the negative direction side to the negative direction side, when viewed in the positive direction, the upper protrusion is located within a range surrounded by an outer edge of the upper wiring main body and extends along the upper wiring main body, the outer surface of the upper wiring main body on the negative direction side and the outer surface of the second insulating layer are in contact with each other, when viewed in a cross section perpendicular to the main surface, a dimension of the upper protrusion in a direction parallel to the main surface is smaller than a dimension of the upper wiring main body in a direction parallel to the main surface at a location where the upper protrusion is connected, The inductor component according to any one of claims 1 to 10, wherein the negative side surface of the upper protrusion is in contact with the positive side outer surface of the lower wiring main body.

12. The inductor component according to claim 11, wherein the upper wiring body and the upper protrusion are integrally molded.

13. The inductor component according to claim 11 or 12, wherein the material of the second insulating layer contains a resin and a filler which is a powder of a crystalline material.

14. An inductor component as claimed in any one of claims 11 to 13, further comprising a lower resin wall covering the side surfaces of the lower wiring main body, wherein the lower resin wall is in contact with the side surfaces of the second insulating layer, when the outer surfaces of the lower wiring main body excluding the outer surface on the positive direction side and the outer surface on the negative direction side are defined as side surfaces of the lower wiring main body, and the outer surfaces of the second insulating layer excluding the outer surface on the positive direction side and the outer surface on the negative direction side are defined as side surfaces of the second insulating layer.

15. A seed layer forming step of forming a conductive seed layer on a main surface of a base substrate; an insulating layer forming step of forming an insulating layer having an opening of a predetermined wiring pattern on the seed layer; a lower resin wall forming step of forming a lower resin wall on the insulating layer along an outer edge of the opening; a lower inductor wiring forming step of forming a lower wiring main body in a space surrounded by the lower resin wall and forming a lower protruding portion protruding from the lower wiring main body in the opening and extending along the lower wiring main body by electrolytic plating by supplying power to the seed layer; an upper resin wall forming step of forming an upper resin wall on the upper side of the lower wiring main body along the outer edge of the lower wiring main body; an upper inductor wiring forming step of forming an upper inductor wiring in the space surrounded by the upper resin wall by electrolytic plating by supplying power to the seed layer; and an element forming step of forming a magnetic layer including a magnetic material around the lower wiring main body, the lower protruding portion, and the upper inductor wiring after the upper inductor wiring forming step. a seed layer removing step of removing the seed layer after the element body forming step.

16. A method for manufacturing an inductor component as set forth in claim 15, comprising: a second insulating layer forming step, after the lower inductor wiring forming step and before the upper resin wall forming step, of forming a second insulating layer having a second opening along the lower wiring main body on the lower wiring main body, the second insulating layer having a second opening along the lower wiring main body; an upper resin wall forming step, above the lower wiring main body, of forming an upper resin wall along an outer edge of the second opening of the second insulating layer; an upper inductor wiring forming step, by electrolytic plating by supplying power to the seed layer, of forming an upper wiring main body in a space surrounded by the upper resin wall, and of forming an upper protruding portion protruding from the upper wiring main body in the second opening and extending along the upper wiring main body; and an element forming step, of forming the magnetic layer made of a magnetic material around the lower wiring main body, the lower protruding portion, the upper wiring main body, and the upper protruding portion.

17. A semiconductor device comprising: a base substrate; a conductive seed layer located on a main surface side of the base substrate; an insulating layer located on the seed layer and extending parallel to the main surface of the base substrate; a lower inductor wiring located on the insulating layer and extending parallel to the main surface of the base substrate; and an upper inductor wiring located on the lower inductor wiring and extending parallel to the main surface of the base substrate, wherein when one direction perpendicular to the main surface of the base substrate is defined as a positive direction and a direction opposite to the positive direction is defined as a negative direction, the lower inductor wiring comprises: a lower wiring main body extending on an outer surface of the insulating layer on the positive direction side; and a protrusion protruding from an outer surface of the lower wiring main body on the negative direction side to the negative direction side, when viewed see-through in the positive direction, the protrusion extends along the lower wiring main body, and the negative direction side surface of the protrusion is in contact with the seed layer, and the upper inductor wiring is A substrate for manufacturing an inductor component, the substrate extending along and on an outer surface of the lower wiring main body on the positive side, the negative side surface of the upper inductor wiring being in contact with the positive side surface of the lower inductor wiring.

18. The substrate for manufacturing an inductor component according to claim 17, wherein the material of the seed layer is different from the material of the protrusion.

19. A substrate for manufacturing an inductor component according to claim 17 or 18, further comprising an adhesive layer interposed between said base substrate and said seed layer, said adhesive layer being made of a resin having adhesive properties.

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