Semiconductor device and production method therefor

Abstract

[Problem] To provide a semiconductor device which can be produced in an improved yield. [Solution] A semiconductor device according to an embodiment of the present disclosure comprises a semiconductor part including a semiconductor element formed therein, a resin member superposed on the semiconductor part, and a glass member superposed on the resin member. In this semiconductor device, the glass member has side surfaces including concave surfaces formed therein. In this semiconductor device, the side surfaces of the semiconductor part are located more inside the side surfaces of the glass member.

Description

Semiconductor device and manufacturing method thereof

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the same.

[0002] A known semiconductor device has a laminated structure in which a semiconductor portion on which a semiconductor element is formed, a resin member, and a glass member are laminated in that order. The manufacturing process of a semiconductor device having such a laminated structure includes a dicing process for dividing a semiconductor wafer into individual semiconductor chips.

[0003] In conventional dicing processes, a semiconductor part, a resin member, and a glass member adhered to a dicing tape are collectively processed by a blade.

[0004] Japanese Patent Application Laid-Open No. 2022-19935

[0005] When a laminate consisting of a semiconductor part, a resin part, and a glass part is processed at the same time, differences in the material properties of each layer can cause delamination at the interface between the semiconductor part and the resin part, or at the interface between the resin part and the glass part. Furthermore, chipping can occur in the glass part when the blade cuts the dicing tape. Dicing defects such as delamination and chipping can lead to reduced manufacturing yields.

[0006] The present disclosure provides a semiconductor device and a method for manufacturing the same that can improve manufacturing yield.

[0007] A semiconductor device according to an embodiment of the present disclosure includes a semiconductor portion having a semiconductor element formed thereon, a resin member laminated on the semiconductor portion, and a glass member laminated on the resin member. In this semiconductor device, a concave curved surface is formed on a side surface of the glass member. In this semiconductor device, the side surface of the semiconductor portion is located inside the side surface of the glass member.

[0008] The semiconductor element may be a light receiving element, a solid-state imaging element, or a light emitting element.

[0009] A method for manufacturing a semiconductor device according to one embodiment of the present disclosure includes adhering a semiconductor wafer having a laminate of a glass member, a resin member, and a semiconductor portion having a semiconductor element formed thereon to a dicing tape, selectively etching the semiconductor portion relative to the resin member, performing a first dicing process in which the resin member exposed by etching the semiconductor portion is diced partway through the glass member, flipping the semiconductor wafer so that the glass member is the top layer, and performing a second dicing process in which the top layer of glass member is diced.

[0010] The semiconductor portion may be etched by introducing an etching gas having a selectivity with respect to the resin member into a chamber that accommodates the semiconductor wafer while plasma is generated in the chamber.

[0011] The etching gas is SF ６ (sulfur hexafluoride) or C ４ F ８ (octafluorocyclobutane).

[0012] The blade width of the cutting tool used in the first dicing process may be different from the blade width of the cutting tool used in the second dicing process.

[0013] The blade width of the cutting tool used in the second dicing process may be larger than the blade width of the cutting tool used in the first dicing process.

[0014] The blade width of the cutting tool used in the second dicing process may be smaller than the blade width of the cutting tool used in the first dicing process.

[0015] The blade width of the cutting tool used in the first dicing process may be the same as the blade width of the cutting tool used in the second dicing process.

[0016] A protective film may be formed on the semiconductor portion, and the semiconductor portion may be etched using the protective film as a mask.

[0017] The first dicing process may dice the glass member to the middle.

[0018] 1 is a cross-sectional view showing a schematic structure of a semiconductor device according to a first embodiment; FIG. 1 is a cross-sectional view showing a step of bonding a semiconductor wafer to a dicing tape; FIG. 1 is a cross-sectional view showing a step of applying a protective film to the upper surface of a semiconductor portion; FIG. 1 is a cross-sectional view showing a step of removing a part of the protective film; FIG. 1 is a cross-sectional view showing a step of selectively dicing a semiconductor portion by plasma dicing; FIG. 1 is a cross-sectional view showing a step of removing the protective film by a cleaning process; FIG. 1 is a cross-sectional view showing a first dicing process of the first embodiment; FIG. 1 is a cross-sectional view showing a step of inverting a semiconductor wafer; FIG. 1 is a cross-sectional view showing a second dicing process of the first embodiment; FIG. 1 is a cross-sectional view for explaining a method for manufacturing a semiconductor device according to a comparative example; FIG. 1 is a cross-sectional view showing a first dicing process of the second embodiment; FIG. 1 is a cross-sectional view showing a second dicing process of the second embodiment;

[0019] Hereinafter, an embodiment of a semiconductor device according to the present disclosure will be described with reference to the drawings. Here, the main components of the semiconductor device will be mainly described, but the semiconductor device may have components and functions that are not shown or described. The following description does not exclude components and functions that are not shown or described.

[0020] 1 is a cross-sectional view showing a schematic structure of a semiconductor device according to a first embodiment. The semiconductor device 1 shown in Fig. 1 includes a semiconductor portion 10, a resin member 20, and a glass member 30. Each layer will be described below.

[0021] The semiconductor section 10 is a silicon semiconductor section in which semiconductor elements are formed. These semiconductor elements include light-receiving elements, solid-state imaging elements, and light-emitting elements. Light-receiving elements include photodiodes and phototransistors. Solid-state imaging elements include CCD (Charge-Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) image sensors. Light-emitting elements include light-emitting diodes.

[0022] The resin member 20 is laminated on the semiconductor portion 10. The resin member 20 is, for example, an adhesive that bonds the semiconductor portion 10 and the glass member 30. This adhesive has optical transparency.

[0023] The glass member 30 is laminated on the resin member 20. When the semiconductor element provided in the semiconductor section 10 is a light receiving element or a solid-state imaging element, the glass member 30 functions as a lens that focuses incident light toward the semiconductor element. Furthermore, a concave curved surface 31 is formed on the upper part of the side surface of the glass member 30. This concave curved surface 31 is formed by scraping off a portion of the side surface of the glass member 30 in a blade dicing process described below.

[0024] In the semiconductor device 1 configured as described above, the relationship among the thickness t1 of the semiconductor portion 10, the thickness t2 of the resin member 20, and the thickness t3 of the glass member 30 is t3>t1>t2.

[0025] Furthermore, the width w1 of the semiconductor portion 10 is smaller than the width w2 of the glass member 30. In this case, the outermost periphery of the semiconductor device 1 becomes the glass member 30. That is, the side surface of the semiconductor portion 10 is located inside the side surface of the glass member 30. Therefore, when a horizontal impact is applied to the semiconductor device 1, the impact is directly received by the glass member 30, and the impact on the semiconductor portion 10 is mitigated. This reduces the risk of breakage of the semiconductor portion 10, which is more fragile than the glass member 30. This prevents a deterioration in manufacturing yield.

[0026] 2 to 10, a method for manufacturing the semiconductor device 1 will be described below. Here, a processing step for dividing a semiconductor wafer into individual semiconductor chips will be described.

[0027] First, as shown in Fig. 2, the semiconductor wafer 100 is adhered to the dicing tape 40. A glass member 30, a resin member 20, and a semiconductor part 10 are laminated on the semiconductor wafer 100. The glass member 30 is made into the dicing tape 40. The resin member 20 is laminated on the glass member 30. The semiconductor part 10 is laminated on the resin member 20.

[0028] 3, a protective film 50 is applied to the upper surface of the semiconductor portion 10. The protective film 50 is made of, for example, propylene glycol monomethyl ether (PGME) or a light absorbing agent.

[0029] 4, a part of the protective film 50 is removed. The part of the protective film 50 that is to be removed is the dicing part. The protective film 50 can be removed by, for example, laser irradiation.

[0030] Next, as shown in Fig. 5, the semiconductor portion 10 is selectively diced by plasma dicing. In plasma dicing, first, the semiconductor wafer 100 is placed in a chamber 200. Next, a high voltage is applied to an electrode (not shown) provided in the chamber 200 to generate plasma 201. With the plasma 201 generated, an etching gas 202 is introduced into the chamber 200, and the semiconductor portion 10 is diced by plasma etching using the protective film 50 as a mask. The etching gas 202 contains SF ６ (sulfur hexafluoride) and C ４ F ８ A gas species such as octafluorocyclobutane, which can ensure an etching selectivity between silicon, which is the material of the semiconductor portion 10, and the material of the resin member 20, is used.

[0031] Next, as shown in FIG. 6, the protective film 50 is removed by a cleaning process using a specific chemical.

[0032] Next, as shown in Fig. 7, a first dicing process is performed. In the first dicing process, a cutting tool 301 is used to dice from the surface of the resin member 20 exposed by dicing the semiconductor portion 10 to partway through the glass member 30. At this time, a tapered groove is formed so that the resin member 20 will be wider than the semiconductor portion 10 after singulation. Note that, for example, a dicing blade, a laser cutter, an ultrasonic cutter, a wire saw, a water jet, or the like can be used as the cutting tool 301. Furthermore, the end position of dicing by the cutting tool 301 is, for example, the middle position of the glass member 30.

[0033] Next, as shown in FIG. 8, the semiconductor wafer 100 is turned over 180 degrees with respect to the dicing tape 40 .

[0034] Finally, as shown in FIG. 9 , a second dicing process is performed. In the second dicing process, the remaining portion of the glass member 30 is diced using a cutting tool 302. As a result, the semiconductor wafer 100 is divided into individual semiconductor chips. As with the cutting tool 301, the cutting tool 302 may be, for example, a dicing blade, a laser cutter, an ultrasonic cutter, a wire saw, or a water jet. When the cutting tools 301 and 302 are dicing blades, the blade width w4 of the cutting tool 302 is greater than the blade width w3 of the cutting tool 301.

[0035] A method for manufacturing a semiconductor device according to a comparative example will now be described with reference to Fig. 10. In Fig. 10, the same components as those in this embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0036] In this comparative example, the semiconductor part 10, the resin member 20, and the glass member 30 are diced together using a dicing blade 303. At this time, since the rigidity of each material of the semiconductor part 10, the resin member 20, and the glass member 30 differs, delamination may occur at the interface between the semiconductor part 10 and the resin member 20 or at the interface between the resin member 20 and the glass member 30. Furthermore, chipping may occur at the interface between the glass member 30 and the dicing tape 40 when the dicing blade 303 cuts a portion of the dicing tape 40.

[0037] Therefore, in this embodiment, in order to avoid dicing defects such as delamination and chipping, first, only the semiconductor portion 10 is etched by plasma dicing using an etching gas 202 having a selectivity with respect to the resin member 20. This makes it possible to suppress delamination at the interface between the semiconductor portion 10 and the resin member 20.

[0038] Next, half-cut dicing is performed using cutting tool 301, dicing from the processed surface after plasma dicing to the middle of glass member 30. In this half-cut dicing, the entire glass member 30 is not diced as in the comparative example. Therefore, there is no entrapment of dicing tape 40, and it is possible to stably blade dicing the interface between resin member 20 and glass member 30. Furthermore, because dicing tape 40 is not cut as in the comparative example, chipping can also be avoided.

[0039] Finally, the substrate is inverted so that the glass member 30 is the uppermost layer, and only the glass member 30 is diced using a cutting tool 302. This prevents chipping because the dicing tape 40 is not cut. Furthermore, the dicing conditions can be set according to the characteristics of the glass member 30, making it possible to maximize the processing speed.

[0040] As described above, according to this embodiment, it is possible to suppress the occurrence of interfacial peeling and chipping, thereby reducing dicing processing defects and improving manufacturing yield.

[0041] In this embodiment, the blade width w4 of the cutting tool 302 that dices the glass member 30 is larger than the blade width w3 of the cutting tool 301 that dices the resin member 20 and a portion of the glass member 30. This facilitates alignment of the cutting tool 302 during processing and enables the dicing time to be shortened. Furthermore, because the cutting tool 301 with a narrow blade width is used to dice the resin member 20, the plasma etching width of the semiconductor portion 10 can be reduced. This enables the etching time to be shortened.

[0042] Second Embodiment A second embodiment of the present disclosure will be described, focusing on a method for manufacturing a semiconductor device according to this embodiment.

[0043] In this embodiment, the process up to the step of selectively dicing the semiconductor portion 10 by plasma dicing is the same as in the first embodiment.

[0044] On the other hand, in the first dicing process of this embodiment, as shown in Fig. 11, cutting tool 302 is used to dice from the surface of resin member 20 to partway through glass member 30. In addition, in the second dicing process of this embodiment, as shown in Fig. 12, cutting tool 301 is used to dice glass member 30 after inversion. That is, in this embodiment, the cutting tool used in the dicing process is reversed from that in the first embodiment.

[0045] In the present embodiment described above, similarly to the first embodiment, only the semiconductor portion 10 is etched by plasma dicing using an etching gas 202 having a selectivity with respect to the resin member 20. This makes it possible to suppress peeling at the interface between the semiconductor portion 10 and the resin member 20.

[0046] Furthermore, even if half-cut dicing is performed using cutting tool 302 instead of cutting tool 301, the dicing tape 40 does not get caught in the dicing tape 40, and it is possible to stably blade-diced the interface between the resin member 20 and the glass member 30. Furthermore, because the dicing tape 40 is not cut, chipping can also be avoided. Furthermore, by using cutting tool 302, which has a wider blade width than cutting tool 301, it becomes easier to align the second dicing process.

[0047] In this embodiment, the semiconductor wafer 100 is also inverted so that the glass member 30 is the uppermost layer. Therefore, even if the glass member 30 is diced using the cutting tool 301 instead of the cutting tool 302, the dicing tape 40 is not cut. This makes it possible to prevent chipping.

[0048] As described above, in this embodiment, as in the first embodiment, it is possible to suppress the occurrence of interfacial peeling and chipping, thereby reducing dicing processing defects and improving the manufacturing yield.

[0049] Third Embodiment A third embodiment of the present disclosure will be described, focusing on a method for manufacturing a semiconductor device according to this embodiment.

[0050] In this embodiment, the steps up to the step of performing the first dicing process using the cutting tool 301 are the same as those in the first embodiment.

[0051] On the other hand, the second dicing process of this embodiment differs from the first embodiment in that, as shown in Fig. 14, the glass member 30 after inversion is diced using a cutting tool 301. That is, in this embodiment, both the first dicing process and the second dicing process are performed using cutting tool 301. Note that, in this embodiment, these two dicing processes may also be performed using cutting tool 302.

[0052] In the present embodiment described above, similarly to the first embodiment, only the semiconductor portion 10 is etched by plasma dicing using an etching gas 202 having a selectivity with respect to the resin member 20. This makes it possible to suppress peeling at the interface between the semiconductor portion 10 and the resin member 20.

[0053] Furthermore, as in the first embodiment, the first dicing process using the cutting tool 301 prevents the dicing tape 40 from getting caught, and enables stable half-cut dicing of the interface between the resin member 20 and the glass member 30. Furthermore, because the dicing tape 40 is not cut, chipping can also be suppressed.

[0054] In this embodiment, the semiconductor wafer 100 is also inverted so that the glass member 30 is the uppermost layer. Therefore, even if the glass member 30 is diced using cutting tool 301 instead of cutting tool 302, the dicing tape 40 is not cut. This prevents chipping from occurring. Furthermore, as long as positional accuracy is ensured, it is possible to reduce unevenness on the side surface of the glass member 30 due to the processed shape. Furthermore, since there is no need to change the cutting tool before dicing the glass member 30, the work time can be shortened.

[0055] As described above, in this embodiment, as in the first embodiment, it is possible to suppress the occurrence of interfacial peeling and chipping, thereby reducing dicing processing defects and improving the manufacturing yield.

[0056] Note that the present technology is not limited to the above-described embodiments, but also includes configurations in which the configurations disclosed in the above-described embodiments are mutually substituted or the combinations are changed, publicly known technologies, and configurations in which the configurations disclosed in the above-described embodiments are mutually substituted or the combinations are changed, etc. Furthermore, the technical scope of the present technology is not limited to the above-described embodiments, but extends to the matters described in the claims and their equivalents.

[0057] The present technology can also be configured as follows:

[0058] (1) A semiconductor device comprising: a semiconductor section having a semiconductor element formed thereon; a resin member laminated on the semiconductor section; and a glass member laminated on the resin member, wherein a concave curved surface is formed on a side surface of the glass member, and the side surface of the semiconductor section is located inside the side surface of the glass member.

[0059] (2) The semiconductor device according to (1), wherein the semiconductor element is a light receiving element, a solid-state imaging element, or a light emitting element.

[0060] (3) A method for manufacturing a semiconductor device, comprising: adhering a semiconductor wafer having a glass member, a resin member, and a semiconductor portion having a semiconductor element formed thereon to a dicing tape; selectively etching the semiconductor portion with respect to the resin member; performing a first dicing process of dicing from the resin member exposed by etching the semiconductor portion to partway through the glass member; inverting the semiconductor wafer so that the glass member becomes the uppermost layer; and performing a second dicing process of dicing the uppermost glass member.

[0061] (4) The method for manufacturing a semiconductor device according to (3), wherein the semiconductor portion is etched by introducing an etching gas having a selectivity with respect to the resin member into a chamber that accommodates the semiconductor wafer while plasma is generated in the chamber.

[0062] (5) The etching gas is SF ６ (sulfur hexafluoride) or C ４ F ８(4) The method for manufacturing a semiconductor device according to (4), which contains (octafluorocyclobutane).

[0063] (6) The method for manufacturing a semiconductor device according to any one of (3) to (5), wherein the blade width of the cutting tool used in the first dicing process is different from the blade width of the cutting tool used in the second dicing process.

[0064] (7) The method for manufacturing a semiconductor device according to (6), wherein the blade width of the cutting tool used in the second dicing process is larger than the blade width of the cutting tool used in the first dicing process.

[0065] (8) The method for manufacturing a semiconductor device according to (6), wherein the blade width of the cutting tool used in the second dicing process is smaller than the blade width of the cutting tool used in the first dicing process.

[0066] (9) The method for manufacturing a semiconductor device according to any one of (3) to (5), wherein the blade width of the cutting tool used in the first dicing process is the same as the blade width of the cutting tool used in the second dicing process.

[0067] (10) The method for manufacturing a semiconductor device according to any one of (3) to (9), further comprising forming a protective film on the semiconductor portion, and etching the semiconductor portion using the protective film as a mask.

[0068] (11) The method for manufacturing a semiconductor device according to any one of (3) to (10), wherein the first dicing process dices the glass member to the middle.

[0069] 1: Semiconductor device 10: Semiconductor part 20: Resin member 30: Glass member 31: Concave surface 40: Dicing tape 50: Protective film 200: Chamber 201: Plasma 202: Etching gas 301: Cutting tool 302: Cutting tool

Claims

1. A semiconductor device comprising: a semiconductor section in which a semiconductor element is formed; a resin member laminated on the semiconductor section; and a glass member laminated on the resin member, wherein a concave curved surface is formed on a side surface of the glass member, and the side surface of the semiconductor section is located inward relative to the side surface of the glass member.

2. The semiconductor device according to claim 1, wherein the semiconductor element is a light receiving element, a solid-state imaging element, or a light emitting element.

3. A method for manufacturing a semiconductor device, comprising: adhering a semiconductor wafer having a glass member, a resin member, and a semiconductor portion having a semiconductor element formed thereon to a dicing tape; selectively etching the semiconductor portion with respect to the resin member; performing a first dicing process in which the resin member exposed by the etching of the semiconductor portion is diced to a position partway through the glass member; flipping the semiconductor wafer so that the glass member becomes the uppermost layer; and performing a second dicing process in which the uppermost glass member is diced.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the semiconductor portion is etched by introducing an etching gas having a selectivity with respect to the resin member into a chamber containing the semiconductor wafer while a plasma is generated in the chamber.

5. The etching gas is SF ６ (sulfur hexafluoride) or C ４ F ８ 5. The method for manufacturing a semiconductor device according to claim 4, further comprising the step of:

6. The method for manufacturing a semiconductor device according to claim 3, wherein the blade width of a cutting tool used in the first dicing process is different from the blade width of a cutting tool used in the second dicing process.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the blade width of a cutting tool used in the second dicing process is greater than the blade width of a cutting tool used in the first dicing process.

8. The method for manufacturing a semiconductor device according to claim 6, wherein the blade width of a cutting tool used in the second dicing process is smaller than the blade width of a cutting tool used in the first dicing process.

9. The method for manufacturing a semiconductor device according to claim 3, wherein the blade width of a cutting tool used in the first dicing process is the same as the blade width of a cutting tool used in the second dicing process.

10. The method for manufacturing a semiconductor device according to claim 3, further comprising the steps of: forming a protective film on said semiconductor portion; and etching said semiconductor portion using said protective film as a mask.

11. The method for manufacturing a semiconductor device according to claim 3, wherein the first dicing process dices the glass member to the middle.

Images