Substrate treatment method and substrate treatment device

Abstract

A substrate treatment method and a substrate treatment device are provided, in which a film containing silicon and / or germanium is formed in recesses of a substrate including an underlying film having the recesses formed therein.　The substrate treatment method, in which a film containing silicon and / or germanium is formed in recesses of a substrate including an underlying film having the recesses formed therein, comprises (a) a step in which a first film deposition gas, which contains silicon and / or germanium, is supplied to the substrate and (b) a step in which a second film deposition gas, which contains silicon and / or germanium, and a halogen-containing gas are simultaneously supplied to the substrate. At the time when the step (b) is initiated after the step (a), the recesses have opening widths of 10 nm or less.

Description

Substrate processing method and substrate processing apparatus

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

[0002] Patent Document 1 discloses a film formation method for forming a predetermined film on a workpiece placed in a processing vessel, the film formation method comprising: a first film formation step in which a film is formed on the surface of the workpiece by CVD while supplying a film formation gas into the processing vessel; a subsequent etching step in which an etching gas is supplied into the processing vessel and the film formed in the first film formation step is slightly etched; and a subsequent second film formation step in which a film is formed on the surface of the workpiece by CVD while supplying the same film formation gas as in the first film formation step into the processing vessel.

[0003] Japanese Patent Application Publication No. 10-321556

[0004] In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus for forming a film containing silicon and / or germanium in a recess formed in a substrate having an underlayer film.

[0005] In order to solve the above problem, according to one aspect, there is provided a substrate processing method for forming a film containing silicon and / or germanium in a recess formed in a substrate having an underlayer film, the substrate processing method comprising the steps of: (a) supplying a first film formation gas containing silicon and / or germanium to the substrate; and (b) simultaneously supplying a second film formation gas containing silicon and / or germanium and a halogen-containing gas to the substrate, wherein after step (a), the opening width of the recess when step (b) is started is 10 nm or less.

[0006] According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus for forming a film containing silicon and / or germanium in a recess formed in a substrate having an underlayer film.

[0007] 1 is a schematic diagram showing an example of a configuration of a substrate processing apparatus; a flowchart showing an example of a substrate processing method according to the first embodiment; a schematic diagram showing an example of a state of a substrate surface in each step of the substrate processing method according to the first embodiment; a schematic diagram showing an example of a state of a substrate surface in each step of the substrate processing method according to the first embodiment; a flowchart showing an example of a substrate processing method according to the second embodiment; a flowchart showing an example of a substrate processing method according to the third embodiment; a schematic diagram showing an example of a state of a substrate surface in each step of the substrate processing method according to the sixth ....

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Substrate Processing Apparatus] A substrate processing apparatus 100 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the configuration of the substrate processing apparatus 100.

[0010] As shown in FIG. 1, the substrate processing apparatus 100 includes a processing chamber 1, a mounting table 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, an RF power supply unit 8, and a control unit 9.

[0011] The processing vessel 1 is made of a metal such as aluminum and has a generally cylindrical shape. The processing vessel 1 accommodates a substrate W. A loading / unloading port 11 is formed in the sidewall of the processing vessel 1 for loading and unloading the substrate W, and the loading / unloading port 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 with a rectangular cross section is provided above the main body of the processing vessel 1. A slit 13a is formed along the inner periphery of the exhaust duct 13. An exhaust port 13b is formed in the outer wall of the exhaust duct 13. A ceiling wall 14 is provided on the upper surface of the exhaust duct 13 to close the upper opening of the processing vessel 1 via an insulating member 16. A seal ring 15 hermetically seals the space between the exhaust duct 13 and the insulating member 16. A partition member 17 divides the interior of the processing vessel 1 into upper and lower sections when the mounting table 2 (and cover member 22) is raised to a processing position described below.

[0012] The mounting table (substrate support) 2 horizontally supports the substrate W within the processing chamber 1. The mounting table 2 is formed in a disk shape corresponding to the size of the substrate W and is supported by a support member 23. The mounting table 2 is made of a ceramic material such as AlN or a metal material such as an aluminum or nickel alloy, and has a heater 21 embedded therein for heating the substrate W. The heater 21 generates heat when power is supplied from a heater power supply 25. The output of the heater 21 is controlled by a temperature signal from a thermocouple (not shown) provided near the top surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramic such as alumina, which covers the outer periphery of the top surface and the side surfaces.

[0013] A support member 23 that supports the mounting table 2 is provided on the bottom surface of the mounting table 2. The support member 23 extends from the center of the bottom surface of the mounting table 2 to below the processing vessel 1, passing through a hole formed in the bottom wall of the processing vessel 1, and its lower end is connected to a lifting mechanism 24. The lifting mechanism 24 raises and lowers the mounting table 2 via the support member 23 between a processing position shown in FIG. 1 and a transfer position, shown by a two-dot chain line below, where a substrate W can be transferred. In addition, a flange 26 is provided on the support member 23 below the bottom surface of the processing vessel 1. A bellows 27 that separates the atmosphere inside the processing vessel 1 from the outside air and expands and contracts as the mounting table 2 is raised and lowered is provided between the bottom surface of the processing vessel 1 and the flange 26.

[0014] Three wafer support pins 28a (only two shown) are provided near the bottom of the processing vessel 1, protruding upward from a lift plate 28b. The wafer support pins 28a are raised and lowered via the lift plate 28b by a lift mechanism 28 provided below the processing vessel 1. The wafer support pins 28a are inserted into through holes 2a provided in the mounting table 2 at the transfer position, and are capable of projecting and retracting relative to the upper surface of the mounting table 2. By raising and lowering the wafer support pins 28a, the substrate W is transferred between the transfer mechanism (not shown) and the mounting table 2.

[0015] The shower head 3 supplies a processing gas into the processing vessel 1 in a shower-like manner. The shower head 3 is made of metal, is disposed opposite the mounting table 2, and has approximately the same diameter as the mounting table 2. The shower head 3 includes a main body 31 fixed to the ceiling wall 14 of the processing vessel 1, and a shower plate 32 connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32, and a gas inlet hole 36 is provided in the gas diffusion space 33 so as to penetrate the center of the ceiling wall 14 and the main body 31 of the processing vessel 1. A downwardly protruding annular protrusion 34 is formed on the periphery of the shower plate 32. Gas outlet holes 35 are formed on the inner flat surface of the annular protrusion 34. When the mounting table 2 is in the processing position, a processing space 38 is formed between the mounting table 2 and the shower plate 32, and an annular gap 39 is formed between the upper surface of the cover member 22 and the annular protrusion 34, which are adjacent to each other.

[0016] The exhaust unit 4 exhausts the inside of the processing vessel 1. The exhaust unit 4 has an exhaust pipe 41 connected to the exhaust port 13b and an exhaust mechanism 42 having a vacuum pump, a pressure control valve, etc. connected to the exhaust pipe 41. During processing, gas inside the processing vessel 1 reaches the exhaust duct 13 through the slit 13a, passes from the exhaust duct 13 through the exhaust pipe 41, and is exhausted by the exhaust mechanism 42.

[0017] The gas supply mechanism (gas supply unit) 5 supplies a processing gas into the processing chamber 1. The gas supply mechanism 5 is connected to the gas inlet 36 via a gas supply line 56.

[0018] The substrate processing apparatus 100 is a capacitively coupled plasma apparatus, in which the mounting table 2 serves as a lower electrode and the shower head 3 serves as an upper electrode. The mounting table 2, which serves as the lower electrode, is grounded via a capacitor (not shown).

[0019] Radio frequency power (hereinafter also referred to as "RF power") is applied to the shower head 3, which serves as the upper electrode, by an RF power supply unit 8. The RF power supply unit 8 includes a power feed line 81, a matching box 82, and a radio frequency power supply 83. The radio frequency power supply 83 generates radio frequency power. The radio frequency power has a frequency suitable for generating plasma. The frequency of the radio frequency power is, for example, within a range of 450 KHz to 100 MHz. The radio frequency power supply 83 is connected to the main body 31 of the shower head 3 via the matching box 82 and the power feed line 81. The matching box 82 has a circuit for matching the output reactance of the radio frequency power supply 83 with the reactance of the load (upper electrode). Note that, although the RF power supply unit 8 has been described as applying radio frequency power to the shower head 3, which serves as the upper electrode, the present invention is not limited thereto. It may also be configured to apply radio frequency power to the mounting table 2, which serves as the lower electrode. Furthermore, the substrate processing apparatus 100 does not necessarily have a configuration for applying radio frequency power.

[0020] The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus 100. The control unit 9 may be provided inside or outside the substrate processing apparatus 100. When the control unit 9 is provided outside the substrate processing apparatus 100, the control unit 9 can control the substrate processing apparatus 100 via communication means such as wired or wireless.

[0021] 1, the substrate processing apparatus 100 has been described as being a single-wafer type substrate processing apparatus 100, but is not limited to this. The substrate processing apparatus may be a batch type substrate processing apparatus in which a large number of substrates W are loaded in multiple stages and processed, or may be a semi-batch type substrate processing apparatus.

[0022] <Substrate Processing Method According to First Embodiment> Next, a substrate processing method according to a first embodiment using the substrate processing apparatus 100 will be described with reference to FIG. 2 and FIGS. 3A to 3C. FIG. 2 is a flowchart showing an example of the substrate processing method according to the first embodiment. FIGS. 3A to 3C are schematic diagrams showing an example of the state of the substrate surface in each step of the substrate processing method according to the first embodiment. Here, an example will be described in which silicon-containing films (first silicon-containing film 330, second silicon-containing film 340) are formed in a recess 315 (see FIG. 3A) formed on a substrate W.

[0023] In step S101, a substrate W is prepared. Here, the control unit 9 opens the gate valve 12. A transfer device (not shown) transfers the substrate W from the loading / unloading port 11 into the processing chamber 1 and places it on the mounting table 2. When the transfer device retreats from the loading / unloading port 11, the control unit 9 closes the gate valve 12. Next, the control unit 9 controls the exhaust mechanism 42 to evacuate the processing chamber 1. Next, the control unit 9 controls the lifting mechanism 24 to raise the mounting table 2 from the transfer position to the processing position. The control unit 9 may also control the heater power supply 25 to cause the heater 21 to generate heat and preheat the substrate W placed on the mounting table 2.

[0024] 3A is a schematic diagram showing an example of the state of the substrate surface of the substrate W prepared in step S101. The substrate W has a first film 310 and a second film (undercoat film) 320. The first film 310 is an insulator film (dielectric film) made of, for example, SiN, but is not limited to this. The first film 310 also has recesses 315 such as trenches and holes. The second film 320 is a silicon oxide film (SiO ２ The second film 320 is an insulating film (dielectric film) formed of a silicon oxide film (e.g., SiO ２ ) and has recesses 315 such as trenches and holes on the surface of the substrate.

[0025] In step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Here, the control unit 9 controls the gas supply mechanism 5 to supply the first silicon-containing gas into the processing space 38. The control unit 9 may also be configured to control the RF power supply unit 8 to generate plasma in the processing space 38. As a result, a first silicon-containing film 330 (see FIG. 3B ) is formed on the substrate surface of the substrate W by CVD (Chemical Vapor Deposition) or plasma-enhanced Chemical Vapor Deposition (Plasma-Enhanced Chemical Vapor Deposition). In other words, the first silicon-containing film 330 is formed on the substrate surface of the second film (base film) 320.

[0026] Here, the first silicon-containing gas is, for example, monosilane (SiH ４ ), disilane (Si ２ H ６ ), trisilane (Si ３ H ８ ), tetrasilane (Si ４ H １０ ), dichlorosilane (SiH ２ Cl ２) or a mixture of these gases can be used. The first silicon-containing film 330 formed in step S102 is, for example, an amorphous silicon film.

[0027] 3B is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the first silicon-containing film 330 is formed in step S102. Here, the first silicon-containing film 330 is formed on the second film (base film) 320 of the substrate W. That is, the first silicon-containing film 330 is formed with good coverage, even on the upper part of the trench and the sidewalls and bottom of the recess 315. As a result, the opening width L1 of the recess 335 (see FIG. 3B) after the first silicon-containing film 330 is formed is narrower than the opening width L0 of the recess 315 (see FIG. 3A) before the first silicon-containing film 330 is formed. That is, step S102 is a process of supplying a first silicon-containing gas to the substrate W to form the first silicon-containing film 330 on the substrate surface of the substrate W, thereby narrowing the opening width of the recess formed on the substrate surface of the substrate W.

[0028] In step S103, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are simultaneously supplied to the substrate W. Here, the control unit 9 controls the gas supply mechanism 5 to supply the second silicon-containing gas and the halogen-containing gas into the processing space 38. As a result, a second silicon-containing film 340 (see FIG. 3C ) is formed on the substrate surface of the substrate W by CVD. In other words, the second silicon-containing film 340 is formed on the substrate surface of the first silicon-containing film 330.

[0029] Here, the second silicon-containing gas is, for example, monosilane (SiH ４ ), disilane (Si ２ H ６ ), trisilane (Si ３ H ８ ), tetrasilane (Si ４ H １０ ), dichlorosilane (SiH ２ Cl ２ The halogen-containing gas may be, for example, chlorine gas (Cl ２), hydrogen bromide gas (HBr), fluorine gas (F ２ ), hydrogen iodide gas (HI), or the like can be used. The first silicon-containing gas and the second silicon-containing gas may be the same gas or different gases, and are not limited thereto. The second silicon-containing film 340 formed in step S103 is, for example, an amorphous silicon film.

[0030] 3C is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the second silicon-containing film 340 is formed in step S103. Here, the second silicon-containing film 340 is selectively embedded in the recess 335 (see FIG. 3B ) with a narrowed opening width.

[0031] Here, after step S102, the opening width L1 of the recess 335 when step S103 is started is preferably 10 nm or less. This makes it difficult for the halogen-containing gas to reach the interior of the recess 335. On the other hand, the second silicon-containing gas can reach the interior of the recess 335 sufficiently. Therefore, in the recess 335 having an opening width L1 of 10 nm or less, the film formation rate of the second silicon-containing gas is dominant over the rate at which the halogen-containing gas inhibits film formation, and the second silicon-containing film 340 is selectively formed. On the other hand, the halogen-containing gas inhibits film formation of the second silicon-containing film 340 at the top of the sidewall of the recess 335. This allows the second silicon-containing film 340 to be embedded in the recess 335 seamlessly and void-free. In a recess having an opening width greater than 10 nm, the second silicon-containing gas and the halogen-containing gas can easily reach the inside of the recess 335 as well as the top of the sidewall (upper part of the trench) of the recess 335, which also suppresses the formation of the second silicon-containing film 340 in the recess 335. Therefore, it becomes difficult to form the second silicon-containing film 340 in the recess 335.

[0032] In step S103, the film formation rate at the top of the sidewalls of the recess 335 (upper part of the trench) is preferably set to about 0 nm / min (specifically, within a range of −0.1 nm / min to +1.1 nm / min). In other words, in step S103, the flow rate of the second silicon-containing gas, the flow rate of the halogen-containing gas, the pressure in the processing chamber 1, the temperature of the substrate W, and the like are preferably controlled so that the film formation rate at the top of the sidewalls of the recess 335 is about 0 nm / min (specifically, within a range of −0.1 nm / min to +1.1 nm / min). This suppresses the formation of the second silicon-containing film 340 at the top of the sidewalls of the recess 335. Meanwhile, the second silicon-containing film 340 is embedded in the recess 335. If the film formation rate at the top of the sidewall of recess 335 (upper part of the trench) is greater than the above-mentioned range, the opening of recess 335 may be blocked, forming a void or the like, before recess 335 is filled with second silicon-containing film 340. If the film formation rate at the top of the sidewall of recess 335 (upper part of the trench) is smaller than the above-mentioned range, the formation of second silicon-containing film 340 inside recess 335 may also be suppressed.

[0033] As described above, according to the substrate processing method of the first embodiment, the recess 315 can be filled with the silicon-containing film (the first silicon-containing film 330 and the second silicon-containing film 340) in a void-free and seamless manner.

[0034] Furthermore, according to the substrate processing method of the first embodiment, filling the recess 315 with a silicon-containing film can be performed in two film formation steps (S102, S103). This improves fill controllability compared to a substrate processing method in which a film formation step and an etching step are repeated to fill the recess. Furthermore, it improves fill uniformity within the substrate surface and between substrates. Furthermore, according to the substrate processing method of the first embodiment, it is possible to shorten the processing time compared to a substrate processing method in which a film formation step and an etching step are repeated to fill the recess. This improves the processing capacity of the substrate processing apparatus 100. Furthermore, according to the substrate processing method of the first embodiment, it is not necessary to perform a step of purging gas from the processing chamber 1 between the step of forming the first silicon-containing film 330 (S102) and the step of forming the second silicon-containing film 340 (S103). This shortens the processing time.

[0035] Furthermore, in the substrate processing method according to the first embodiment, compared to a substrate processing method in which a silicon-containing film is filled into a recess by repeating a film formation process and an etching process, it is possible to prevent the upper sidewalls of the recess 315 in the second film (base film) 320 from being exposed by the etching process. This makes it possible to suppress the formation of microcrystals in the amorphous silicon film. Furthermore, it is possible to suppress damage to the second film (base film) 320 caused by the halogen-containing gas (etching gas).

[0036] <Substrate Processing Method According to Second Embodiment> Next, a substrate processing method according to a second embodiment using the substrate processing apparatus 100 will be described with reference to Fig. 4. Fig. 4 is a flowchart showing an example of the substrate processing method according to the second embodiment.

[0037] In step S201, a substrate W is prepared in the same manner as in step S101.

[0038] In step S202, a seed gas containing silicon is supplied to the substrate W to form a seed layer (not shown) on the surface of the substrate W. Here, for example, a higher order silane such as aminosilane and / or disilane can be used as the seed gas.

[0039] In step S203, similar to step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W to form a first silicon-containing film 330 on a seed layer (not shown), thereby narrowing the opening width of the recess formed on the substrate surface of the substrate W.

[0040] In step S204, similar to step S103, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are supplied to the substrate W to fill the recess 335 with a second silicon-containing film 340 void-free and seamlessly.

[0041] As described above, according to the substrate processing method of the second embodiment, the recessed portion can be filled with the silicon-containing film (the first silicon-containing film 330 and the second silicon-containing film 340) in a void-free and seamless manner.

[0042] Furthermore, forming the seed layer improves the flatness of the amorphous silicon films (first silicon-containing film 330, second silicon-containing film 340). Furthermore, forming the amorphous silicon films (first silicon-containing film 330, second silicon-containing film 340) using the seed layer as a starting point reduces the incubation time (delay time before film formation starts).

[0043] <Substrate Processing Method According to Third Embodiment> Next, a substrate processing method according to a third embodiment using the substrate processing apparatus 100 will be described with reference to FIG. 5 and FIGS. 6A to 6H. FIG. 5 is a flowchart illustrating an example of the substrate processing method according to the third embodiment. FIGS. 6A to 6H are schematic diagrams illustrating an example of the state of the substrate surface in each step of the substrate processing method according to a sixth embodiment. Here, an example will be described in which a silicon-containing film is formed in the recesses 401, 402, and 403 of a substrate W having an undercoat film 400 in which a plurality of recesses 401, 402, and 403 with different opening widths are formed.

[0044] In step S301, a substrate W is prepared in the same manner as in step S101. Fig. 6A is a schematic diagram showing an example of the state of the substrate surface of the substrate W prepared in step S301. The substrate W has an undercoat film 400 in which a plurality of recesses 401, 402, and 403 with different opening widths are formed. In the following description, the opening widths are in the order of narrowest to narrowest: recess 401, recess 402, and recess 403. The undercoat film 400 is a silicon oxide film (SiO ２ ) is an insulating film (dielectric film).

[0045] In step S302, similarly to step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6B is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the first silicon-containing film 410 has been formed in step S302. As a result, the first silicon-containing film 410 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 401 formed on the substrate surface of the substrate W is narrowed to a predetermined opening width or less (e.g., 10 nm or less).

[0046] In step S303, similarly to step S103, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are supplied to the substrate W. FIG. 6C is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the second silicon-containing film 420 has been formed in step S303. As a result, the halogen-containing gas is less likely to reach the recess 401 having a predetermined opening width or less (e.g., 10 nm or less), and the second silicon-containing gas reaches the recess 401, thereby enabling the second silicon-containing film 420 to be filled void-free and seamlessly. On the other hand, the second silicon-containing gas and the halogen-containing gas reach the top of the sidewall of the recess 401 and the recesses 402 and 403, thereby suppressing the formation of the second silicon-containing film 420.

[0047] In step S304, the control unit 9 determines whether or not the process has been repeated a predetermined number of times. If the process has not been repeated a predetermined number of times (S304: NO), the process of the control unit 9 returns to step S302.

[0048] In step S302 for the second time, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6D is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the third silicon-containing film 430 has been formed in step S302. As a result, the third silicon-containing film 430 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 402 formed in the substrate surface of the substrate W is narrowed to a predetermined opening width or less (e.g., 10 nm or less).

[0049] In the second step S303, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are supplied to the substrate W. FIG. 6E is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the fourth silicon-containing film 440 has been formed in step S303. This makes it difficult for the halogen-containing gas to reach the recesses 402 having a predetermined opening width or less (e.g., 10 nm or less), and the second silicon-containing gas reaches the recesses 402, allowing the fourth silicon-containing film 440 to be filled void-free and seamlessly. On the other hand, the second silicon-containing gas and the halogen-containing gas reach the tops of the sidewalls of the recesses 402 and the recesses 403, suppressing the formation of the fourth silicon-containing film 440.

[0050] In step S304, the control unit 9 determines whether or not the process has been repeated a predetermined number of times. If the process has not been repeated a predetermined number of times (S304: NO), the process of the control unit 9 returns to step S302.

[0051] In step S302 for the third time, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6F is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the fifth silicon-containing film 450 has been formed in step S302. As a result, the fifth silicon-containing film 450 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 403 formed in the substrate surface of the substrate W is narrowed to a predetermined opening width or less (e.g., 10 nm or less).

[0052] In step S303, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are supplied to the substrate W for the third time. FIG. 6G is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the sixth silicon-containing film 460 has been formed in step S303. This makes it difficult for the halogen-containing gas to reach the recesses 403 having a predetermined opening width or less (e.g., 10 nm or less), and the second silicon-containing gas reaches the recesses 403, thereby enabling the sixth silicon-containing film 460 to be filled seamlessly and void-free. Meanwhile, the second silicon-containing gas and the halogen-containing gas reach the tops of the sidewalls of the recesses 403, thereby suppressing the formation of the sixth silicon-containing film 460.

[0053] In step S304, the control unit 9 determines whether or not the process has been repeated a predetermined number of times. If the process has been repeated a predetermined number of times (YES in S304), the process of the control unit 9 proceeds to step S305.

[0054] In step S305, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Figure 6H is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the seventh silicon-containing film 470 has been formed in step S305. As a result, the seventh silicon-containing film 470 (see Figure 6H) is formed on the substrate surface of the substrate W by CVD or plasma CVD.

[0055] As described above, according to the substrate processing method of the third embodiment, the processes of steps S302 and S303 are set as one cycle, and this cycle is repeated (see S304) for recesses 401, 402, and 403 having different opening widths, thereby filling the silicon-containing film in order from the recesses 401, 402, and 403 having the narrowest opening widths. Furthermore, according to the substrate processing method of the third embodiment, the silicon-containing film can be filled void-free and seamlessly, as in the substrate processing method of the first embodiment.

[0056] In a substrate processing method in which a silicon-containing film is filled into a recess by repeating a film formation process and an etching process, it is necessary to adjust the film formation conditions in the film formation process and the etching conditions in the etching process for each opening width, making it difficult to fill the recess with a silicon-containing film voidlessly and seamlessly. On the other hand, according to the substrate processing method of the third embodiment, it is possible to fill the recess with a silicon-containing film voidlessly and seamlessly by simply adjusting the film formation time in step S302 (fixing the film formation conditions in step S303) for each opening width. Note that the film formation conditions in step S303 do not need to be fixed.

[0057] Although the substrate processing method according to the present embodiment (first to third embodiments) has been described taking the case of forming a silicon-containing film in a recess of a substrate W as an example, the present invention is not limited thereto. The substrate processing method according to the present embodiment (first to third embodiments) may also be applied to the case of forming a film containing silicon and / or germanium in a recess of a substrate W. That is, a first silicon- and / or germanium-containing gas may be used as the first film formation gas, and a second silicon- and / or germanium-containing gas may be used as the second film formation gas. Germanium (GeH ４ ), Zigelmane (Ge ２ H ６ ), germanium tetrachloride (GeCl ４ ) gas can be used as the second deposition gas containing germanium. ４ ), Zigelmane (Ge ２ H ６ ), germanium tetrachloride (GeCl ４ The first and second deposition gases may be the same gas. The halogen-containing gas supplied simultaneously with the second deposition gas containing germanium may be chlorine gas (Cl ２ ), hydrogen bromide gas (HBr), fluorine gas (F ２The method may be applied to the formation of a film containing silicon and / or germanium doped with impurities such as boron (B), phosphorus (P), or carbon (C).

[0058] The above describes the substrate processing method according to the present embodiment (first to third embodiments) using the substrate processing apparatus 100, but the present disclosure is not limited to the above-described embodiments, etc., and various modifications and improvements are possible within the scope of the gist of the present disclosure as set forth in the claims.

[0059] This application claims priority based on Japanese Patent Application No. 2023-153676 filed on September 20, 2023, the entire contents of which are incorporated herein by reference.

[0060] DESCRIPTION OF SYMBOLS 1 Processing vessel 2 Placing table (substrate support section) 3 Shower head 4 Exhaust section 5 Gas supply mechanism (gas supply section) 8 RF power supply section 9 Control section 100 Substrate processing apparatus 310 First film 320 Second film (underlying film) 330 First silicon-containing film 340 Second silicon-containing film 315, 335, 401, 402, 403 Recess 400 Underlying film 410 First silicon-containing film 420 Second silicon-containing film 430 Third silicon-containing film 440 Fourth silicon-containing film 450 Fifth silicon-containing film 460 Sixth silicon-containing film 470 Seventh silicon-containing film W Substrate L0, L1 Opening width

Claims

1. A substrate processing method for forming a film containing silicon and / or germanium in a recess formed in a substrate having an undercoat film, the method comprising the steps of: (a) supplying a first film formation gas containing silicon and / or germanium to the substrate; and (b) simultaneously supplying a second film formation gas containing silicon and / or germanium and a halogen-containing gas to the substrate, wherein after step (a), the opening width of the recess is 10 nm or less when step (b) is started.

2. The substrate processing method according to claim 1, wherein in the step (b), a film formation rate at the top of the side wall of the recess is within a range of -0.1 nm / min to +1.1 nm / min.

3. The substrate processing method according to claim 2, wherein the step (a) is a step of forming a first film containing silicon and / or germanium to narrow the opening width of the recess, and the step (b) is a step of embedding a second film containing silicon and / or germanium in the recess.

4. A substrate processing method according to any one of claims 1 to 3, wherein the base film has a plurality of recesses having different opening widths.

5. The substrate processing method according to claim 4, wherein steps (a) and (b) constitute one cycle, and the cycle is repeated to fill the recesses with the film containing silicon and / or germanium in sequence starting from the recesses with the narrowest opening width.

6. The substrate processing method according to claim 1, wherein the base film is a silicon oxide film.

7. The first deposition gas is SiH ４ , Si ２ H ６ , Si ３ H ８ , Si ４ H １０ , SiH ２ C ２ or a mixture of these gases, and the second deposition gas is SiH ４ , Si ２ H ６ , Si ３ H ８ , Si ４ H １０ , SiH ２ C ２ or a mixture of these gases, and the halogen-containing gas is Cl ２ , HBr, F ２ 2. The method of claim 1, wherein the gas is any one of a gas selected from the group consisting of fluorine, iodine, ...

8. The substrate processing method according to claim 7, wherein the first film forming gas and the second film forming gas are the same gas.

9. A substrate processing apparatus comprising: a processing vessel; a substrate support unit that supports a substrate within the processing vessel; a gas supply unit that supplies gas into the processing vessel; and a control unit, wherein the control unit is configured to be able to execute the steps of: (a) supplying a first film formation gas containing silicon and / or germanium to a substrate having an undercoat film with a recess formed therein; and (b) simultaneously supplying a second film formation gas containing silicon and / or germanium and a halogen-containing gas to the substrate, wherein after step (a), the opening width of the recess when step (b) is started is 10 nm or less.

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