Substrate processing apparatus for atomic layer etching

Abstract

A substrate processing apparatus according to one embodiment of the present disclosure is disclosed. The substrate processing apparatus may comprise: an upper chamber in which plasma treatment is performed on a substrate; a lower chamber in which heat treatment is performed on the substrate; a microwave heat treatment device, which generates microwaves in the lower chamber so as to transfer heat to the substrate; and a stage which supports the substrate, and which can ascend and descend so that the substrate can be moved to a predetermined position according to the process of the substrate.

Description

Substrate processing device for atomic layer etching

[0001] The present disclosure relates to a substrate processing device and a substrate processing method, and more particularly, to a substrate processing device and a substrate processing method for processing a substrate using microwaves for high-speed heat treatment.

[0002] As semiconductor devices become more highly integrated, highly precise etching and deposition processes are increasingly required throughout the semiconductor manufacturing process. Consequently, processes utilizing atomic layer etching (ALE) and atomic layer deposition (ALD) are becoming increasingly popular.

[0003] These atomic layer etching processes and atomic layer deposition processes perform etching or deposition by repeating the process cycle, enabling precise thickness control compared to existing processes. However, they have the disadvantage that the process time may be long, which may reduce productivity compared to existing processes.

[0004] Meanwhile, the various films that make up semiconductor devices are sometimes made of single atoms, such as silicon single crystals, polysilicon, and copper films, and sometimes contain various types of atoms, such as silicon oxide films, silicon nitride films, silicon oxynitride films, metal oxide films, metal nitride films, and silicon germanium films.

[0005] The present disclosure provides a substrate processing device and a substrate processing method capable of shortening a process time while providing uniform and precise etching.

[0006] The present disclosure provides a substrate processing device capable of minimizing volume while providing high-speed heat treatment.

[0007] According to one embodiment of the present disclosure for achieving the above-described task, a substrate processing device is disclosed. The substrate processing device may include: an upper chamber in which plasma processing is performed on a substrate; a lower chamber in which heat processing is performed on the substrate; a microwave heat processor that generates microwaves within the lower chamber to transfer heat to the substrate; and a stage that supports a substrate and is capable of being raised and lowered to move the substrate to a predetermined position according to a process for the substrate.

[0008] Alternatively, the upper chamber may include a gas supply section including a buffer and showerhead for the plasma process.

[0009] Alternatively, the showerhead of the gas supply unit may have a sloped structure from the center of the substrate to the periphery of the substrate.

[0010] Alternatively, the showerhead of the gas supply unit may supply gas to the upper chamber through at least one of an inclined hole or a buffer hole.

[0011] Alternatively, the upper chamber may include an upper plasma generating unit for generating plasma in the upper chamber.

[0012] Alternatively, the upper chamber may include a gas exhaust port through which process gases are exhausted on the side.

[0013] Alternatively, the gas exhaust section may be provided with a coating that maintains the plasma within the upper chamber and prevents adsorption of byproducts.

[0014] Alternatively, the gas exhaust portion may be configured symmetrically around the substrate.

[0015] Alternatively, the upper chamber may be configured to have a height of 0.1 cm to 5 cm to accelerate gas supply and exhaust and to form plasma.

[0016] Alternatively, the stage step may further be included, protruding in the stage direction between the upper chamber and the lower chamber.

[0017] Alternatively, the stage step may include a gasket to prevent gas exchange between the upper chamber and the lower chamber during processing of the substrate in the upper chamber.

[0018] Alternatively, the inner surface of the lower chamber may include a coating that prevents adsorption of byproducts or particles.

[0019] Alternatively, the lower chamber may further include a gas supply unit for supplying an inert gas to the lower chamber.

[0020] Alternatively, the lower chamber may be supplied with the inert gas at a higher pressure than the upper chamber to prevent the process gas from flowing into the upper chamber during the process treatment of the substrate in the upper chamber.

[0021] Alternatively, the microwave heat treater may be positioned on at least one of the side of the lower chamber, the lower surface of the stage step, or the upper surface of the upper chamber gas supply portion.

[0022] Alternatively, the microwave heat treatment device comprises a plurality of microwave sources, wherein the plurality of microwave sources can be arranged symmetrically or asymmetrically about the substrate.

[0023] Alternatively, the plurality of microwave sources can be switched between different microwave supply modes to generate microwaves within the lower chamber to transfer heat to the substrate.

[0024] Alternatively, the various microwave supply modes may be modes in which microwaves are supplied into the lower chamber by a combination of at least one of the plurality of microwave supply sources.

[0025] Alternatively, the stage may support the substrate by electrostatic bonding or mechanical bonding.

[0026] Alternatively, the stage may include an upper plasma generating unit and a lower plasma generating unit for generating plasma or applying a bias to the plasma.

[0027] Alternatively, the stage may be moved up or down by an elevator and support the substrate at a first position where a plasma process is performed or a second position where a heat treatment process is performed.

[0028] Alternatively, a surface modification process and an adsorption layer formation process may be performed during an atomic layer etching (ALE) process for the substrate in the upper chamber, and a heat treatment process may be performed during the atomic layer etching process in the lower chamber.

[0029] Alternatively, in the upper chamber, surface modification for atomic layer etching of the substrate may be performed through plasma treatment in an atomic layer etching process on the substrate, thereby forming a modified layer on the substrate, and in the lower chamber, formation of the modified layer may be promoted through heat treatment using a microwave heat treatment device on the substrate.

[0030] Alternatively, in the upper chamber, an adsorption layer may be formed by gas treatment on a substrate having a modified layer formed thereon, the modified layer and the adsorption layer may be removed by plasma treatment, and in the lower chamber, removal of the modified layer and the adsorption layer may be promoted by heat treatment using a microwave heat treatment device on the substrate.

[0031] Alternatively, a substrate processing device is disclosed. The substrate processing device includes at least one substrate processing device including an upper chamber in which plasma treatment is performed on a substrate; a lower chamber in which heat treatment is performed on the substrate; a microwave heat treatment device that generates microwaves within the lower chamber to transfer heat to the substrate; and a stage that supports a substrate and is capable of being raised and lowered to move the substrate to a predetermined position according to a process for the substrate; and may include a substrate transfer unit that transfers the substrate to the at least one substrate processing device.

[0032] The present disclosure can provide a substrate processing device and a substrate processing method that can shorten the process time while providing uniform and precise etching.

[0033] The present disclosure can provide a substrate processing device that can minimize volume while providing high-speed heat treatment.

[0034] Figure 1 is a conceptual diagram showing a substrate processing device of one embodiment of the present disclosure.

[0035] FIG. 2 is a drawing showing a stage being raised and lowered in a substrate processing device of one embodiment of the present disclosure.

[0036] FIG. 3 is a conceptual diagram showing a microwave heat treatment device arranged in multiple layers in a substrate treatment device of one embodiment of the present disclosure.

[0037] FIG. 4a is a conceptual diagram showing a microwave reflection structure in a substrate processing device of one embodiment of the present disclosure.

[0038] FIG. 4b is an exemplary diagram illustrating in detail the microwave reflection structure of a substrate processing device according to one embodiment of the present disclosure.

[0039] FIG. 5 is an exemplary diagram showing a shower head of a gas supply unit of one embodiment of the present disclosure.

[0040] Figure 6 is an exemplary diagram showing the arrangement of a microwave supply device of one embodiment of the present disclosure.

[0041] FIG. 7 is a diagram illustrating various combinations of microwave generation patterns of multiple microwave supply units of a substrate processing device according to one embodiment of the present disclosure.

[0042] FIG. 8 is a process flow diagram showing a series of process treatments performed in a substrate processing device of one embodiment of the present disclosure in a chronological order.

[0043]

[0044] Figure 9 is a conceptual diagram showing a substrate processing device according to another embodiment of the present invention.

[0045] Figure 10 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0046] Figures 11 to 15 are conceptual diagrams of a substrate processing device according to another embodiment of the present invention.

[0047] Figure 16 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0048] FIG. 17 is a cross-sectional view showing a stage of a substrate processing device according to another embodiment of the present invention.

[0049] Figure 18 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0050] Figure 19 is an enlarged view of part 'B' of the substrate processing device illustrated in Figure 18.

[0051] Figure 20 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0052] FIG. 21 is a plan view of a substrate processing device according to the embodiment of FIG. 20.

[0053] Figure 19 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0054] Figure 22 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0055] Figure 23 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.

[0056] FIG. 24 is an exemplary diagram of a substrate processing equipment including a substrate processing device of one embodiment of the present disclosure.

[0057] FIG. 25 is an exemplary diagram of a substrate processing equipment including a substrate processing device of one embodiment of the present disclosure.

[0058] Various embodiments are now described with reference to the drawings. In this specification, various descriptions are provided to facilitate understanding of the present disclosure. However, it will be apparent that these embodiments may be practiced without these specific details.

[0059] As used herein, the terms "component," "module," "system," and the like refer to computer-related entities, hardware, firmware, software, a combination of software and hardware, or an execution of software. For example, a component may be, but is not limited to, a procedure running on a processor, a processor, an object, a thread of execution, a program, and / or a computer. For example, both an application running on a computing device and the computing device may be a component. One or more components may reside within a processor and / or a thread of execution. A component may be localized within a single computer. A component may be distributed between two or more computers. Furthermore, these components may execute from various computer-readable media having various data structures stored therein. Components may communicate via local and / or remote processes, for example, by signals comprising one or more data packets (e.g., data from one component interacting with another component in a local system, a distributed system, and / or data transmitted to another system via a network such as the Internet via signals).

[0060] Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." That is, unless otherwise specified or clear from context, "X employs A or B" is intended to mean either of the natural inclusive permutations. That is, if X employs A; X employs B; or X employs both A and B, "X employs A or B" can apply to any of these cases. Furthermore, the term "and / or" as used herein should be understood to refer to and include all possible combinations of one or more of the associated items listed.

[0061] Additionally, the terms "comprises" and / or "comprising" should be understood to imply the presence of the features and / or components in question. However, it should be understood that the terms "comprises" and / or "comprising" do not exclude the presence or addition of one or more other features, components, and / or groups thereof. Furthermore, unless otherwise specified or clear from the context to refer to the singular form, the singular in the specification and claims should generally be construed to mean "one or more."

[0062] And, the term “at least one of A or B” should be interpreted to mean “if it includes only A”, “if it includes only B”, or “if it is combined in the composition of A and B”.

[0063] Those skilled in the art should further appreciate that the various illustrative logical blocks, configurations, modules, circuits, means, logics, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate the interchangeability of hardware and software, various illustrative components, blocks, configurations, means, logics, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application. However, such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.

[0064] The description of the disclosed embodiments is provided to enable a person skilled in the art to make or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art. The general principles defined herein may be applied to other embodiments without departing from the scope of the present disclosure. Therefore, the present invention is not limited to the embodiments disclosed herein. The present invention is to be construed in the widest scope consistent with the principles and novel features disclosed herein.

[0065] Figure 1 is a conceptual diagram showing a substrate processing device of one embodiment of the present disclosure.

[0066] The substrate (10) processed in the substrate processing device may include any semiconductor devices such as wafers, display panels, masks, and glass substrates for manufacturing semiconductor devices such as DRAM, NAND flash memory, CPU, NPU, GPGPU, and PIM, and the present disclosure is not limited thereto. The process for the substrate (10) performed in the substrate processing device (100) may include atomic layer etching (ALE) or atomic layer deposition (ALE).

[0067] The substrate processing device (100) may be composed of an upper chamber (1000) and a lower chamber (2000) for processing different processes. The upper chamber (1000) and the lower chamber (2000) may be, broadly speaking, parts of a single chamber. The substrate (10) may be transferred to the upper chamber (1000) and the lower chamber (2000) according to the up and down movement of the stage (4000), so that a scheduled process may be performed in each chamber.

[0068] In the upper chamber, a first process treatment may be performed on the substrate (10), and in the lower chamber (2000), a second process treatment different from the first process treatment may be performed on the substrate (10). The process treatment performed in the upper chamber (1000) may include a process using gas and plasma, such as a surface modification process and an adsorption layer formation process during an atomic layer etching process on the substrate (10). The process treatment performed in the lower chamber (2000) may include a heat treatment process during an atomic layer etching process on the substrate (10).

[0069] The upper chamber (1000) and the lower chamber (2000) may be distinguished by a stage step (1160) protruding in the stage direction between the upper chamber (1000) and the lower chamber (2000). In an embodiment without the stage step (1160), the upper chamber (1000) and the lower chamber (2000) may be distinguished by being composed of different pieces. In addition, the upper chamber (1000) and the lower chamber (2000) may be composed of a single piece. In this case, the upper chamber (1000) and the lower chamber (2000) may be distinguished by the process-specific position of the stage (4000). For example, if the stage (4000) is at the first position for the process treatment performed in the upper chamber (1000), the upper chamber (1000) and the lower chamber (2000) may be distinguished based on this.

[0070] The upper chamber (1000) may include a gas supply unit (1100) for supplying process gas. The gas supply unit (1100) is composed of a showerhead (1130), a buffer (1120), and a gas supply line (1110), and may be located at the upper portion of the upper chamber (1000).

[0071] The showerhead (1130) of the gas supply unit may include a sloped structure from the center of the substrate to the periphery of the substrate. As in the example of FIG. 5d, the showerhead of the gas supply unit (1100) may include a sloped structure in which the center is high and the periphery is low. The structure of FIG. 5d is merely an example, and the sloped structure of the showerhead (1130) may include a sloped structure in which the center is low and the periphery is high, and may also have a curved cross-section.

[0072] The showerhead (1130) of the gas supply unit can supply process gas to the upper chamber (1000) through at least one hole of an inclined hole structure, a buffer hole structure, or a straight hole structure. The example of FIG. 5a is an example of a buffer hole structure of a showerhead hole (1131), and FIGS. 5b and 5c are examples of an inclined hole structure of a showerhead hole (1131). The buffer hole structure is a structure in which the hole sizes of a surface close to the substrate and the hole sizes of the opposite surfaces are different from each other, and may be a hole structure including a portion having a buffer effect in the showerhead hole (1131). The shape of the showerhead and the shape of the showerhead hole illustrated in FIG. 5 are merely examples, and the present disclosure is not limited thereto. The showerhead hole (1131) may be configured to have a size through which microwaves cannot pass.

[0073] The lower surface of the showerhead (1130) of the gas supply unit may include a first microwave reflection structure (2401) that reflects microwaves generated by the microwave heat treatment device (3000) in the direction of the substrate to ensure uniformity of the substrate.

[0074] In embodiments where the microwave heat treatment device is positioned in the lower chamber (2000), the showerhead (1130) may be constructed of a material that is impermeable to microwaves. In embodiments where the microwave heat treatment device is positioned above the upper chamber (1000), the showerhead (1130) may be constructed of a material that is permeable to microwaves.

[0075] A gas supply line (1110) may be connected to one or more gas tanks to supply process gases for each process. The supplied process gases may vary depending on the material and / or recipe of the substrate being processed.

[0076] The buffer (1120) can increase the uniformity of the substrate by providing an area where the gas supplied through the gas supply line (1110) can stay for a while before passing through the showerhead (1130).

[0077] The upper chamber (1000) may include an upper plasma generating unit (1150) for generating plasma (20) in the upper chamber. The upper plasma generating unit (1150) may generate plasma (20) in the supplied process gas. In addition, a bias may be applied to the plasma (20) generated by the upper plasma generating unit (1150) by the lower plasma generating unit (4200) to accelerate the action of the plasma (20) on the substrate (10). Additionally, only the lower plasma generating unit (4200) may operate to generate plasma (20). In each case, the energy applied to the upper plasma generating unit (1150) or the lower plasma generating unit (4200) may differ depending on the etching target, the material of the substrate, and / or the recipe.

[0078] A gas exhaust port (1140) through which process gas is exhausted may be positioned on the side of the upper chamber (1000). The gas exhaust port (1140) may be made of a material or have a coating (1141) added thereto that maintains plasma inside the upper chamber (1000) and prevents adsorption of byproducts. The material and coating (1141) of the gas exhaust port may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc., but this is merely an example and the present disclosure is not limited thereto.

[0079] The gas exhaust section (1140) may include an exhaust section microwave reflection structure (1143). The exhaust section microwave reflection structure (1143) may be composed of holes of a size that is impermeable to microwaves, through which gas may pass but microwaves may be blocked from passing through.

[0080] The gas exhaust unit (1140) may further include a material or coating (1145) that prevents adsorption of byproducts and has etching resistance.

[0081] The gas exhaust unit (1140) may include a third susceptor (not shown) that absorbs microwaves and generates heat. The third susceptor is located at the rear end of the coating (1141) in the gas exhaust line and absorbs microwaves and generates heat, thereby secondarily preventing the adsorption of byproducts on the coating (1141).

[0082] The gas exhaust unit (1140) may be located at least once on the side of the upper chamber (1000) and may be configured symmetrically around the substrate (10) to ensure uniformity of the substrate (10).

[0083] Although not shown in FIG. 1, the gas exhaust unit (1140) may further include an intake for accelerating gas exhaust.

[0084] The upper chamber (1000) may be configured to have a height of 0.1 cm to 5 cm during a process in the upper chamber (1000) (e.g., when the stage (4000) is in the first position) to accelerate gas supply and exhaust and to form plasma. The height of the upper chamber (1000) described above may refer to the distance between the lower surface of the showerhead (1130) and the stage (4000), and may vary depending on the position of the stage (4000), but the height may be the height when the stage (4000) is at a position (for example, a first position) for a process in the upper chamber (1000). The volume of the upper chamber (1000) may be changed by the height of the stage (4000), and the volume of the upper chamber (1000) may be configured as a minimum volume for maintaining plasma in order to accelerate gas supply and exhaust. In addition, depending on the process performed in the upper chamber (1000), the minimum volume when plasma is required and the minimum volume in a process when only gas is required may be different, and in this case, the stage (4000) may be raised and lowered to optimize the volume of the upper chamber (1000) according to the process. For example, the upper chamber (1000) may be configured as a first position for a plasma process. The volume can be optimized for each process by changing the stage (4000) by raising and lowering the stage (4000), such that the first volume is for the gas process, and the third volume is for the gas discharge. The heights mentioned above are merely examples and the present disclosure is not limited thereto.

[0085] The substrate processing device (100) may include a stage step (1160) protruding toward the stage (4000) between the upper chamber (1000) and the lower chamber (2000). The stage step (1160) may be configured to separate the upper chamber (1000) and the lower chamber (2000), and the diameters of the upper chamber (1000) and the lower chamber (2000) may be set to be different from each other by the stage step (1160). As described above, since the smaller the volume of the upper chamber (1000), the faster the gas supply and exhaust speed can be, the upper chamber (1000) may have a smaller diameter than the lower chamber (2000) by the stage step (1160).

[0086] The stage step (1160) may include a gasket (not shown) to prevent gas exchange between the upper chamber and the lower chamber during a process on a substrate in the upper chamber. In the example of FIG. 1, a path for fluid flow is shown between the stage step (1160) and the stage (4000). However, in an embodiment with a gasket (not shown), gas exchange between the upper chamber (1000) and the lower chamber (2000) may not occur due to the gasket when the stage (4000) is in the first position (position of FIG. 2a). The gasket may be made of a soft material or may be fixed in a form that can be opened and closed to allow gas to flow from the lower chamber (2000) to the upper chamber (1000) during a purge process in the upper chamber (1000).

[0087] The substrate processing device (100) includes a lower chamber (2000) where heat treatment is performed on the substrate. As described above, the upper chamber (1000) and the lower chamber (2000) are connected to each other and are regions separated according to the process in one chamber. For convenience, the region below the first position (position in FIG. 2A) of the stage (4000) is described as the lower chamber (2000).

[0088] The lower chamber (2000) performs heat treatment on the substrate, and when heat treatment is required for the substrate during the process treatment cycle for the substrate, the substrate (10) can be transported by lowering the stage (4000) so that the substrate can be positioned in the lower chamber (2000).

[0089] The inner surface (2001) of the lower chamber may include a second susceptor capable of being heated by microwaves to prevent adsorption of byproducts or particles on the inner surface of the lower chamber. The second susceptor may be formed of a material capable of absorbing microwaves supplied from a microwave heat treatment device and generating heat, and the susceptor may include, for example, at least one of a metal thin film coated on ceramic or a carbon-based material. The materials of the susceptor described above are merely examples and the present disclosure is not limited thereto.

[0090] The second susceptor can be heated by microwaves during the heat treatment process in the lower chamber (2000) to prevent adsorption to the inner surface of the lower chamber (2000), and can also be preheated by microwaves to maintain the temperature of the lower chamber (2000) at a constant level while the substrate is being processed in the upper chamber (1000).

[0091] The lower chamber (2000) may be heated by a microwave heat processor during a purge process for the substrate. During the heating of the lower chamber (2000) by the microwave heat processor, the second susceptor (2100) may be heated by microwaves to bring the temperature of the lower chamber (2000) to a predetermined level, thereby preventing adsorption of the lower chamber (2000). The temperature of the lower chamber (2000) heated during the purge process in the upper chamber may be, for example, a different temperature from the heat treatment temperature in the lower chamber and the preheating temperature of the lower chamber. Although not shown, the inner surface (2001) of the lower chamber may also include a material or coating that prevents adsorption of at least one of byproducts or particles.

[0092] The substrate processing device (100) may include an inert gas supply unit (2200) for supplying an inert gas to the lower chamber. The inert gas supplied by the inert gas supply unit (2200) may be exhausted to a gas exhaust unit (1140) of the upper chamber.

[0093] In the inert gas supply unit (2200), an inert gas may be supplied so that the lower chamber (2000) has a higher pressure than the upper chamber (1000) to prevent the inflow of process gas into the upper chamber while the substrate (10) is being processed in the upper chamber. When a process using gas is performed in the upper chamber (1000), the inert gas supply unit may supply an inert gas so that the lower chamber (2000) has a first pressure higher than the upper chamber (1000).

[0094] In addition, the substrate processing device (100) may additionally include an inert gas discharge unit (not shown) for discharging an inert gas according to an embodiment. The inert gas supply unit (2200) and the inert gas discharge unit (not shown) may be configured as separate gas lines from the gas supply unit (1100) and the gas exhaust unit (1140) of the upper chamber. The inert gas supply unit (2200) and the inert gas discharge unit (not shown) may be located on the side or the lower surface of the lower chamber. For example, the inert gas supply unit (2200) and the inert gas discharge unit (not shown) may be located on the side or the lower surface of the lower chamber.

[0095] In the inert gas supply unit (2200), an inert gas may be supplied so that the lower chamber (2000) has a higher pressure than the upper chamber (1000) in order to prevent the process gas from flowing into the upper chamber while the substrate (10) is being processed in the upper chamber. In another embodiment where an inert gas discharge unit is applied, the inert gas supplied in this way may be supplied from the inert gas supply unit (2200) by locking the inert gas discharge unit (not shown) during the process of the upper chamber (1000) so that the pressure of the lower chamber is higher than that of the upper chamber (1000), or the inert gas discharge unit (not shown) may be opened so that the inert gas is circulated without being accumulated in the lower chamber (2000) while increasing the supply pressure of the inert gas supply unit (2200) so that the pressure of the lower chamber is higher than that of the upper chamber (1000).

[0096] In addition, the inert gas supply unit (2200) and the inert gas exhaust unit (not shown) may operate according to the process performed in the upper chamber (1000). For example, during a purge process for removing the process gas inside the upper chamber (1000), the inert gas exhaust unit (not shown) may be closed so that the gas is exhausted only to the gas exhaust unit (1140) on the side of the upper chamber (1000). In addition, for example, during a purge process in the upper chamber (1000), the inert gas supply unit (2200) may supply the inert gas at a second pressure. In this case, the second pressure for supplying the inert gas in the purge process of the upper chamber (1000) may be a higher pressure than the first pressure, which is the pressure of the lower chamber (2000), during the gas utilization process of the upper chamber (1000).

[0097] The inert gas supply unit (2200) may supply an inert gas to control the temperature of the lower chamber (2000). For example, when the lower chamber (2000) is to be cooled to an appropriate temperature after a heat treatment process of the lower chamber (2000), an inert gas may be supplied from the inert gas supply unit (2200) and discharged to the gas exhaust unit (1140) to cool the lower chamber. In addition, in another embodiment where an inert gas exhaust unit is applied to the lower chamber, the inert gas supplied from the inert gas supply unit (2200) may be discharged to the inert gas exhaust unit (not shown) of the lower chamber to cool the lower chamber. By controlling the temperature of the lower chamber (2000) in this way, the waiting time between process cycles may be reduced, thereby increasing productivity.

[0098] The inner surface (2001) of the lower chamber (2000) may include a second microwave reflection structure (2400) that reflects microwaves generated by the microwave heat treatment device (3000) toward the substrate. Hereinafter, the microwave reflection structure will be described with reference to FIGS. 4A and 4B. The position and number of the second microwave reflection structures (2400) illustrated in FIG. 4A are merely examples and the present disclosure is not limited thereto. Although FIG. 4A illustrates the second microwave reflection structures (2400) as including different reflection structures, they may include the same reflection structures. Although not illustrated in FIG. 4A, the second microwave reflection structures (2400) may move up and down, or the angle of the reflection surface may be adjusted. The second microwave reflection structures (2400) may be easily detachable and replaced depending on the process or recipe. Although not shown in the drawing, the orientation of the reflective surface of the second microwave reflection structure (2400) can be controlled by the second microwave reflection structure driving unit, such as by lifting, horizontally moving, and rotating. The second microwave reflection structure is driven by the second microwave reflection structure driving unit, so that the position or direction, etc., can be changed to variously control the transmission pattern of microwaves transmitted to the substrate (10). The second microwave reflection structure driving unit can adjust the reflective surface to a predetermined position or direction according to the microwave supply pattern of the microwave heat treatment device.

[0099] The second microwave reflection structure (2400) may include a reflection surface (2410) provided to have an inclination angle of 15 to 75 degrees with respect to the inner surface of the lower chamber. In the example of FIG. 4b, the angle of A2 may be 15 to 75 degrees. As described above, the second microwave reflection structure may reflect microwaves to the substrate (10) or the stage (4000) on which the substrate is positioned, and may have an appropriate inclination angle for reflecting microwaves to the substrate depending on the installation position of the second microwave reflection structure (2400) and the position of the substrate (10). The microwave reflection structure may be configured in a triangular shape. The tip portion (2420) of the microwave reflection structure may include a curved structure having a curvature to prevent arcing. The radius of curvature (R1) of the tip portion (2420) is preferably designed to be, for example, 100 μm or more, and more specifically, may be 500 μm or more. The second microwave reflection structure (2400) may include a plurality of reflection structures along the up-and-down direction of the inner surface (2001) of the lower chamber, and each reflection structure may extend in a ring shape along the circumferential direction of the lower chamber. The second microwave reflection structure (2400) may include a plurality of reflection structures, and some of the reflection structures may have a reflection surface configured with a different inclination angle from the other reflection structures. For example, the second microwave reflection structure provided on the upper edge side of the lower chamber may be designed with a gentler inclination angle than the second microwave reflection structure provided on the lower side.

[0100] Although not shown in the drawing, the lower inner surface of the lower chamber may also have a shape designed to take microwave reflection into account. For example, the lower inner surface of the lower chamber (2000) may include a curved reflective structure.

[0101] The microwave heat processor (3000) can generate microwaves in the lower chamber (2000) to transfer heat to the substrate (10). The microwave heat processor (3000) can be placed on at least one of the side of the lower chamber (2000), the lower surface of the stage step (1160), or the upper surface of the gas supply unit (1100) of the upper chamber. Fig. 1 is an example in which the microwave heat processor (3000) is installed on the side of the lower chamber. Since a vacuum process may be performed in the chamber, the location where the microwave heat processor (3000) is attached in the chamber may be made of a material that allows microwaves to pass through (for example, ceramic, quartz, Y2O3, Al2O3, Mica, glass, acrylic, etc.). In another embodiment of the present invention, a heat processor of a type other than microwaves can be used in the substrate processing apparatus of the present invention. For example, an infrared lamp (IR lamp), a flash lamp, a laser (LASER), an electron beam (E-beam), plasma, microwaves, etc. may be used as a heat source for the heat treatment device of the substrate treatment device of the present invention, and a combination of the same or different heat sources may be employed.

[0102] The microwave heat treatment device (3000) can heat the substrate to the process temperature more quickly by heating the substrate using microwaves, and can also lower the temperature of the substrate from the process temperature more quickly by stopping the supply of microwaves, cooling using the stage (4000), and circulating an inert gas. Through high-speed heat treatment using microwaves, the substrate treatment device of one embodiment of the present disclosure can reduce the time required for the atomic layer etching process cycle and provide a high-speed atomic layer etching process, thereby increasing the UPH (unit per hour). This can overcome the productivity limitations of existing atomic layer etching or atomic layer deposition.

[0103] The microwave heat treatment device (3000) includes a plurality of microwave suppliers (3100), and through the plurality of microwaves supplied from the plurality of microwave suppliers (3100), the heating time can be freely adjusted according to the recipe, the uniformity of the substrate can be increased, and the reliability of the substrate treatment device can be improved. The plurality of microwave suppliers (3100) can be arranged symmetrically or asymmetrically with respect to the substrate. FIGS. 6A and 6B are exemplary diagrams of the arrangement of the plurality of microwave suppliers (3100). As shown in FIGS. 6A and 6B, the chamber of the substrate treatment device (100) can have a rectangular or circular shape. The plurality of microwave suppliers (3100) can be arranged at the edge of the chamber to supply microwaves in a form surrounding the substrate.

[0104] Each of the microwave sources (3100) may include known components capable of supplying microwaves. For example, each of the microwave sources (3100) may include a magnetron, a waveguide, a cooling module (e.g., a cooling fan or a cooling path), a transformer, a capacitor, a diode, etc., and the above description is merely exemplary and may include any known components.

[0105] The microwave heat processor (3000) may be composed of one or more layers (3001, 3002). The example of FIG. 1 illustrates an embodiment in which the microwave heat processor is composed of one layer. The example of FIG. 3 illustrates an embodiment in which the microwave heat processor (3000) is composed of two layers. Although not illustrated, the microwave heat processor (3000) may be composed of three or more layers, and the configuration of multiple microwave heat processors (3000) may be arbitrarily set according to requirements such as process temperature and heating time, and constraints such as the volume of the microwave supply and the height of the chamber. In the case of having a two-layer microwave heat processor as in the example of FIG. 3, each microwave supply may be configured to be stacked equally for each layer, or the microwave supply units included in each layer may be arranged to intersect for each layer. For example, the microwave supply (3002) of the second layer at the bottom and the microwave supply (3001) of the first layer at the top may be arranged so that the x and y axes are the same but the z coordinates are different, or they may be arranged in a zigzag manner so that the x and y axes are different. By arranging multiple microwave supply units, uniformity of the substrate can be secured, and by controlling the output of microwaves supplied using multiple microwave supply units, the time taken to reach the process temperature can be reduced, and more precise heat control is possible.

[0106] The microwave heat processor (3000) may include a microwave controller (3200) that independently drives each of a plurality of microwave sources (3100) to control a microwave generation pattern of each of the microwave sources. The plurality of microwave sources (3100) may be controlled by the microwave controller (3200) to switch between various microwave supply modes to generate microwaves within the lower chamber to transfer heat to the substrate (10). The various microwave supply modes may be modes that supply microwaves within the lower chamber by a combination of at least one of the plurality of microwave sources. The microwave controller (3200) may control each of the plurality of microwave sources according to a predetermined microwave supply pattern, or may control each of the plurality of microwave sources according to at least one of a temperature distribution of the substrate or a temperature distribution of the lower chamber measured during a process treatment for the substrate. The microwave controller (3200) can supply microwaves by controlling the microwave supply according to a predetermined pattern according to a recipe or process, and can control the supply of microwaves according to data measured by a sensor or the like during the process. The microwave controller (3200) can determine the output of each microwave supply or the number of microwave supply units to supply microwaves according to at least one of the process target temperature and the time to reach the process target temperature. If more rapid heating is required, the microwave controller (3200) can increase the output of each microwave supply unit and increase the heating speed for heat treatment by increasing the number of operating microwave supply units. By including a plurality of microwave supply units, heating for process treatment can be controlled more precisely, and heat can be evenly supplied to the substrate, thereby increasing the productivity of the substrate while improving uniformity.

[0107] FIG. 7 is a diagram illustrating various combinations of microwave generation patterns of a plurality of microwave supply units (3100) of a substrate processing device according to an embodiment of the present disclosure. FIG. 7 (a) to (n) illustrate microwave generation patterns of a plurality of microwave supply units arranged in the order of the circumference of the lower chamber.

[0108] The microwave controller (3200) can control the microwave heat treatment machine in at least one of a first supply mode for driving a plurality of microwave suppliers (3100) at once, a second supply mode for driving a plurality of microwaves sequentially according to a predetermined pattern, a third supply mode for driving a pair of opposing microwave suppliers among the plurality of microwave suppliers in a single operation to sequentially drive the microwave suppliers, a fourth supply mode for driving a plurality of opposing microwave suppliers among the plurality of microwave suppliers in a single operation to sequentially drive the microwave suppliers, a fifth supply mode for driving all microwave suppliers sequentially by driving at least some adjacent microwave suppliers among the plurality of microwave suppliers at once, or a sixth supply mode for controlling at least some microwave suppliers among the plurality of microwave suppliers according to a temperature distribution of a substrate or a lower chamber. In addition, the microwave controller (3200) can control the microwave heat processor in at least one of a seventh supply mode that controls a plurality of microwave suppliers arranged in a plurality of layers in at least one of the first to sixth supply modes for each layer, an eighth supply mode that controls a plurality of microwave suppliers arranged in a plurality of layers in an integrated manner in at least one of the first to sixth supply modes, or a ninth supply mode that uses only at least some layers of the plurality of microwave suppliers arranged in a plurality of layers. For example, when the substrate (10) is being processed in the upper chamber (1000), and the lower chamber (2000) needs to be preheated, the lower chamber (2000) may be preheated using the microwave suppliers of some of the layers among the plurality of layers.

[0109] The microwave generation pattern illustrated in FIG. 7 is merely an example, and the present disclosure is not limited thereto, and the microwave generation pattern may be varied in various ways so that an appropriate level of heat for a reaction can be uniformly, effectively, and quickly transferred to the substrate (10). Although FIG. 7 illustrates an example in which multiple microwave generation patterns are sequentially changed in time series, it is also possible to drive multiple microwave suppliers with a single microwave generation pattern, or to drive microwave suppliers by repeating two or more microwave generation patterns. In the embodiment of the present disclosure, the heat supply to the substrate by the multiple microwave suppliers can be adjusted at a high speed, precisely, and uniformly. In addition, since there is no need to rotate and drive a stage or a microwave heat treatment device by the multiple microwave suppliers, the manufacturing cost of the process equipment can be reduced, and the maintenance and repair cost can be reduced, and the volume of the process equipment can be reduced so that the equipment can be arranged more compactly, thereby configuring a space-efficient process.

[0110] At least one microwave source among the plurality of microwave sources (3100) may supply microwaves of a different frequency than the other microwave sources. For example, the plurality of microwave sources (3100) may supply microwaves of the same frequency (e.g., 2.45 GHz), but at least some may be configured to generate microwaves of different frequencies (e.g., 2.5 GHz, 2.4 GHz, etc.). By making some of the microwave sources have different frequencies, the influence of constructive interference and destructive interference of microwaves generated from the plurality of microwave sources (3100) can be reduced, and thermal imbalance of the substrate caused by such interference can be prevented.

[0111] The stage (4000) supports the substrate (10) and can be moved up and down to move the substrate to a predetermined position according to the process for the substrate. The example of FIG. 2a is an example in which the stage (4000) is positioned at a first position for the process treatment for the substrate in the upper chamber, the example of FIG. 2b is an example in which the stage (4000) is positioned at a second position for the process treatment for the substrate in the lower chamber, and the example of FIG. 2c is an example in which the stage is positioned at a third position for the loading or unloading of the substrate. The first position is for the process in the upper chamber (1000) as described above, and may be, for example, a case in which the stage (4000) is positioned at a position spaced apart from the lower surface of the showerhead (1130) by 0.1 cm to 5 cm, but the numerical range described above is merely an example, and the first position is a position for an optimized volume of the upper chamber required for the process in the upper chamber (1000), and the present disclosure is not limited thereto. When the stage (4000) is positioned at the third position, the pin (2002) can be introduced into the pin hole (4600) of the stage to separate the substrate (10) from the stage. In addition, although not shown in FIG. 2, the stage (4000) can also support the substrate at the 0 position, which is elevated from the first position by an elevator. The 0 position is a position, for example, when it is necessary to reduce the volume of the upper chamber, and the stage (4000) can be elevated from the first position to the 0 position by the elevator (4400) for a purge process in the upper chamber to reduce the volume of the upper chamber and enable rapid gas exhaust.

[0112] The stage (4000) can be moved up or down by an elevator (4400) to a first position for a process in the upper chamber (1000) or a second position for a process in the lower chamber.

[0113] When the substrate is moved to the upper chamber by the stage (4000), a surface modification process and an adsorption layer formation process can be performed during an atomic layer etching process on the substrate in the upper chamber, and when the substrate is moved to the lower chamber by the stage (4000), a heat treatment process can be performed during the atomic layer etching process.

[0114] The stage (4000) can support the substrate through electrostatic coupling or mechanical coupling. For example, when the process is performed in a vacuum state in the upper chamber or the lower chamber, the stage (4000) can support the substrate through electrostatic coupling. In this case, the stage (4000) can include a power supply line (4700) for electrostatic coupling. In addition, the stage (4000) can also support the substrate through vacuum coupling or mechanical coupling such as a chuck pin.

[0115] The stage (4000) may include a lower plasma generation unit (4200) for generating plasma. The lower plasma generation unit (4200) may include an electrode for generating plasma or providing a bias. The electrode may be positioned on the stage (4000). The lower plasma generation unit (4200) may generate plasma (20) and apply a bias to the plasma (20) as described above.

[0116] The stage (4000) may include a first susceptor (4100) that generates heat by microwaves and transfers heat to a substrate. The first susceptor (4100) may include at least one of a metal thin film or a carbon-based material coated on ceramic, and may generate heat in response to microwaves. For the heat generation effect by microwaves, the concentration of the carbon-based material in the susceptor is preferably 0.5 wt% or more, and in the case of the metal thin film, the thickness is preferably 800 μm or less. The above description is merely an example, and the present disclosure is not limited thereto. Heat may be more effectively transferred to the substrate (10) by the heat generation of the first susceptor, and thus the time required for heat treatment may be reduced. The stage (4000) may further include a protective film that surrounds the first susceptor (4100). The protective film may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc., and the above description is only an example and the present disclosure is not limited thereto.

[0117] The stage (4000) may include a coolant passage (4300) capable of controlling the temperature of the stage. In addition, coolant may be supplied through the coolant passage (4300) to enable low-temperature processing for etching various materials. Coolant may be supplied through the coolant passage (4300) at a flow rate to lower the temperature of the substrate at a predetermined rate. The flow rate of the coolant supplied to the coolant passage (4300) may be controlled according to the rate at which the temperature of the substrate is to be controlled. The coolant may be supplied from outside the substrate processing device (100) to the coolant passage (4300) by a coolant supply line (4310). When the substrate is to be cooled at a higher speed, a coolant of a lower temperature or a coolant of a higher speed may be supplied through the coolant passage, and when the substrate is to be cooled at a lower speed, a coolant of a higher temperature or a coolant of a lower speed may be supplied through the coolant passage. The coolant supplied through the coolant channel can be controlled according to the recipe or process requirements. The coolant channel (4300) can supply the coolant before, during, or after the heat treatment process for the substrate. For example, the coolant channel (4300) can supply the coolant during the heat treatment process for the substrate to lower the temperature of the substrate at a predetermined rate after the heat treatment process for the substrate. As described above, the speed of the heat treatment in the atomic layer etching process can be a factor that determines the speed of the process. By supplying the coolant through the coolant channel, the substrate (10) supported on the stage (4000) can be cooled more quickly, thereby increasing the speed of the process. This coolant supply can be started during the heat treatment, and when the coolant supply is started, the microwave heat treatment device can increase the microwave supply to maintain thermal equilibrium with the coolant supply (for example, perform a control operation such as increasing the microwave supply operated by the microwave controller or increasing the intensity of the microwave).Afterwards, if the microwave supply is stopped after the heat treatment process is completed, the temperature of the substrate can be lowered more quickly, and the process time can be shortened. The coolant supply of the stage (4000) and the microwave controller can operate in conjunction as described above. The temperature of the coolant supplied to the stage (4000) can be, for example, -80°C to 30°C, but the present disclosure is not limited thereto, and coolants of various temperatures can be supplied for high-speed heat treatment.

[0118] The stage (4000) may include a baffle (4500) positioned at an edge of the stage to control gas flow between the upper chamber and the lower chamber when the substrate is in the upper chamber. The baffle (4500) includes a baffle hole (4510), through which gas may flow. When the stage (4000) is in the first position, the baffle (4500) may be in contact with the stage step (1160) or may be spaced apart from it. In an embodiment where the baffle (4500) is in contact with the stage step (1160) and there is no baffle hole (4510), gas flow between the upper chamber (1000) and the lower chamber (2000) may be blocked.

[0119] Hereinafter, a substrate processing method performed in a substrate processing device will be described with reference to FIG. 8.

[0120] As described above, atomic layer etching and atomic layer deposition can be performed on a substrate in a substrate processing device. The substrate (10) can be processed by moving between the upper chamber (1000) and the lower chamber (2000) by a stage.

[0121] The substrate (10) can be introduced into the chamber (1000, 2000) through the gate (2300) on one side of the lower chamber. The substrate (10) introduced into the lower chamber (2000) can be transferred to the first position of the upper chamber (1000) by the stage.

[0122] A process for a substrate (10) transferred to a first position by a stage (4000) can be performed in the upper chamber (1000). In the upper chamber (1000), a surface modification treatment of the substrate can be performed for an atomic layer etching process. For the surface modification treatment, a first process gas can be supplied to the upper chamber (1000). As described above, the upper chamber (1000) has an optimized volume, so that the amount of the supplied first process gas can be reduced, and the time required for supplying the first process gas can be reduced.

[0123] The first process gas is supplied and plasma (20) is generated by the plasma generation unit (1150, 4200), and accordingly, a modified layer (11) can be formed on the surface of the substrate (10) in a state where it can react with the precursor.

[0124] After the surface modification step, a purge process may be performed to remove the first process gas and by-products from the upper chamber (1000) through the gas exhaust port (1140) on the side of the upper chamber. To accelerate the purge process, the stage (4000) may be moved to a 0 position, which is a position higher than the first position, to reduce the volume of the upper chamber (1000), and the inert gas supply port (2200) of the lower chamber (2000) may supply an inert gas at a second pressure to accelerate the purge process of the upper chamber (1000), and the inert gas exhaust port (not shown) of the lower chamber may be closed to prevent by-products of the modification process from flowing into the lower chamber (2000).

[0125] An adsorption layer formation process may be performed to form an adsorption layer (12) on a substrate by supplying a second process gas to the substrate on which surface modification treatment has been performed in the upper chamber. At this time, a bias may be applied by a plasma generation unit (1150, 4200) to form the adsorption layer or to ensure smooth reaction, and, if necessary, plasma (20) may be generated in the upper chamber (1000).

[0126] After the adsorption layer formation process, a purge process may be performed to remove the second process gas and dispersions from the upper chamber through the gas exhaust unit (1140) on the side of the upper chamber. Similar to the purge process after the surface modification process described above, the stage for accelerating gas purge, the operation of the inert gas supply unit, and the inert gas exhaust unit may be performed.

[0127] If heating of the substrate is required before or after performing the surface modification process and the adsorption layer formation process, the substrate may be transferred to the lower chamber (2000) by the stage (4000) and heated by the microwave heat processor (3000). If the required process temperature is below a certain level, the substrate processing device (100) may position the substrate (10) at the first position of the upper chamber (1000) and heat the lower chamber (2000) by the microwave heat processor (3000) of the lower chamber so that heat is transferred to the substrate (10).

[0128] Additionally, during the process in the upper chamber, the lower chamber (2000) may be preheated by a microwave heat processor (3000). The preheating temperature at this time may be a first process temperature lower than the second process temperature, which is a heat treatment temperature for the substrate in the lower chamber (2000). As described above, during the purge process in the upper chamber, the lower chamber (2000) may be heated by microwaves. The temperature for preventing adsorption of the lower chamber during the purge process of the upper chamber may be a third process temperature. The third process temperature is not merely a temperature different from the first and second process temperatures, but rather a temperature higher than the second process temperature.

[0129] The substrate (10) on which the adsorption layer (12) is formed is transferred to the second position of the lower chamber by the stage (4000) and heat treatment is performed so that atomic layer etching can be performed on the substrate. Since the bonding force between the modified layer (11) on the substrate surface and the adsorption layer (12) is stronger than the energy to remove the layer (13) adsorbed on the substrate, the modified layer (11) on the substrate surface is removed together with the adsorption layer of the process gas, and the substrate can be etched.

[0130] In the etching process, multiple microwave supply units of the microwave heat treatment unit (3000) can heat the substrate by providing microwaves so that the etching / removal process can be performed efficiently. The substrate (10) can be transferred from a first position to a second position on the stage for heat treatment. At this time, the substrate processing device (100) can preheat at least one of the substrate (10) or the lower chamber (2000) by supplying microwaves using the microwave heat treatment unit (3000) while the substrate is being transferred from the first position to the second position.

[0131] For the etching / removal process, at least one of the inert gas exhaust (not shown) of the lower chamber (2000) or the gas exhaust (1140) of the upper chamber (1000) may be subjected to negative pressure to remove process byproducts.

[0132] After heat treatment is performed on the substrate, the substrate treatment device (100) may perform a cooling step of supplying a coolant to the stage (4000) to adjust the temperature of the substrate to a temperature lower than the heat treatment temperature. As described above, the supply of the coolant may be performed after the heat treatment process or during the process, and if performed during the process, the microwave heat treatment device (3000) may operate to maintain a thermal balance with the coolant supplied to maintain the heat treatment temperature.

[0133] In addition, if there is a need to lower the temperature of the lower chamber (2000) after heat treatment on the substrate is performed, the temperature of the lower chamber (2000) can be controlled by the inert gas flow through the inert gas supply unit (2200) and the inert gas discharge unit (2300) as described above, so that the process cycle can be accelerated.

[0134] The substrate processing device (100) can repeat the etching process cycle including the surface modification process, the adsorption layer formation process, and the heat treatment process as described above until the etching target is reached.

[0135] The substrate that has reached the etching target can be transferred to the third position and taken out of the substrate processing device (100).

[0136] Figure 9 is a conceptual diagram showing a substrate processing device according to another embodiment of the present invention.

[0137] The embodiment of Fig. 9 illustrates a substrate processing device (10000) having a dual chamber. Referring to Fig. 9, the substrate processing device (10000) may include a first process chamber (11000), a second process chamber (12000), and a substrate transfer device (1300) for transferring a substrate (10) between the first process chamber (11000) and the second process chamber (12000).

[0138] The first process chamber (11000) may be a process chamber that performs a first process treatment on a substrate (10). The substrate (10) processed by the substrate processing device (100) may include various substrates, such as wafers for manufacturing semiconductor devices such as DRAM, NAND flash memory, and CPU, display panels such as liquid crystal display (LCD) panels and organic light emitting diode (OLED) panels, masks, and glass substrates, but is not limited to the listed types of substrates.

[0139] The first process treatment performed in the first process chamber (11000) may include, for example, a modification process during an atomic layer etching (ALE) process, an adsorption process during an ALE process, a removal process during an ALE process, a plasma deposition process during an atomic layer deposition (ALD) process, a thermal curing process after an ALD process, etc., but may also include various processes requiring heat treatment.

[0140] For example, the first process chamber (11000) may be a reaction chamber in which a modification / modification process is performed to modify the surface of a substrate (10) by plasma treatment during an ALE process in which a cycle including a modification / modification process, a purging process, a removal process, and a purging process is repeatedly performed, an adsorption process is performed to adsorb a precursor onto the surface of a substrate by supplying a process gas into the reaction chamber, or a removal process is performed to remove a layer adsorbed onto the surface of the substrate.

[0141] The first process treatment performed in the first process chamber (11000) may be performed at a first process temperature. The first process temperature may be a process temperature that is optimized for the first process treatment of the substrate (10) (e.g., a modification / reformation process or an adsorption process, etc.). The first process temperature may be set to a temperature at which the precursor can be effectively adsorbed on the exposed surface layer of the substrate (10) depending on the type of material constituting the substrate (10), the type of precursor gas, etc. The first process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range, a process temperature profile, or a statistically processed value (e.g., an average value) thereof.

[0142] The second process chamber (12000) may be a process chamber that performs a second process treatment on the substrate (10). The second process treatment may be a different process from the first process treatment. The second process treatment performed in the second process chamber (12000) may be performed at a second process temperature that is different from the first process temperature at which the first process treatment is performed. This is because the process temperature suitable for the second process treatment is different from the process temperature suitable for the first process treatment.

[0143] Accordingly, the first process chamber (11000) and the second process chamber (12000) can perform processing on the substrate (10) at different process temperatures. For example, the second process chamber (12000) may be a reaction chamber in which a modification / modification process for modifying the surface of the substrate (10) by plasma treatment during the ALE process or a removal process for removing (desorbing) a layer adsorbed on the surface of the substrate (10) (e.g., an adsorption layer formed by a reaction of silicon, etc., with a gas or precursor on the surface of the substrate) is performed.

[0144] The second process temperature may be a process temperature that is optimized for the second process treatment (e.g., a removal process) of the substrate (10). The second process temperature may be set according to the type of material constituting the substrate (10), the type of gas or precursor, etc. For example, when the second process treatment is a removal process, the temperature may be set to a temperature at which the adsorption layer can be effectively removed from the surface layer of the substrate (10). The second process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range, a process temperature profile, or a statistically processed value (e.g., an average value) thereof.

[0145] The first process chamber (11000) may include a first reaction chamber (11100), a first stage (11200), a first stage driver (11300), and a microwave heat processor (11400). The first reaction chamber (11100) may be configured to accommodate the first stage (11200), the first stage driver (11300), and the microwave heat processor (11400). Although not illustrated, the first reaction chamber (11100) may be provided with a gas supply (not illustrated) for supplying a first process gas such as a precursor gas, an exhaust device for performing a purging process to exhaust residual gas within the first reaction chamber (11100), and the like.

[0146] In one embodiment, the inner wall of the first reaction chamber (11100) may be provided as a liner. The liner may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc., but this is merely exemplary and may be composed of other materials or such materials coated on the surface. The first reaction chamber (11100) may include a first upper chamber (11110) and a first lower chamber (11120) provided below the first upper chamber (11110). The first upper chamber (11110) may be a chamber in which a first process treatment for the substrate (10) is performed. The first lower chamber (11120) may be provided below the first upper chamber (11110) to provide a space for lowering the first stage (11200). In order to reduce consumption of supply gas and to respond quickly, the upper and lower widths of the first upper chamber (11110) can be configured to be approximately 3 mm to 15 cm and are preferably designed to be as thin as possible.

[0147] A first stage (11200) may be provided to support a substrate (10). A first heat treatment device (11210) may be provided in the first stage (11200). The first heat treatment device (11210) may serve to uniformly maintain the temperature of the substrate (10). The first heat treatment device (11210) may control the temperature of each region of the substrate (for example, each concentrically divided region) by controlling the temperature or flow rate of a coolant (coolant), or may uniformly control the temperature of the substrate (10) by using another cooling method.

[0148] The first stage driving unit (11300) can drive the first stage (11200) upward and downward. When the substrate (10) is transported through the first inlet / outlet (13100) by the substrate transport device (13000) while the first stage (11200) is lowered and is placed on the first stage (11200), the first stage driving unit (11300) can drive the first stage (11200) upward toward the first upper chamber (11110).

[0149] After the first process treatment is performed on the substrate (10), the first stage driving unit (11300) can drive the first stage (11200) downward toward the first lower chamber (11120) for subsequent second process treatment. Thereafter, the substrate (10) supported on the first stage (11200) can be transferred to the second process chamber (12000) where the second process treatment is performed through the first inlet / outlet (13100) and the second inlet / outlet (13200) by the substrate transfer device (13000).

[0150] The microwave heat processor (11400) can generate microwaves within the first reaction chamber (11100) to transfer heat to the substrate for rapid heat treatment. The microwave heat processor (1140) can perform rapid heat treatment by generating microwaves for a set time (e.g., approximately 0.1 seconds or more and 30 seconds or less). In one embodiment, the microwave heat processor (1140) can be configured to generate microwaves at a frequency of 2.45 GHz, which corresponds to the standard frequency of microwaves, but the frequency of the microwaves may be changed. The microwave heat processor (11400) is as described above.

[0151] The second process chamber (12000) may include a second reaction chamber (12100), a second stage (12200), a second stage driver (12300), and a plasma processor (12400). The second reaction chamber (12100) may be configured to accommodate the second stage (12200), the second stage driver (12300), and the plasma processor (12400). Although not shown, the second reaction chamber (12100) may be provided with a gas supply (not shown) for supplying a second process gas for plasma generation, an exhaust device for performing a purging process to exhaust residual gas within the second reaction chamber (12100), and the like.

[0152] In one embodiment, the second reaction chamber (12100) may include a second upper chamber (12110) and a second lower chamber (12120) provided below the second upper chamber (12110). The second upper chamber (12110) may be a chamber in which a second process treatment for the substrate (10) is performed. The second lower chamber (12120) may be provided below the second upper chamber (12110) to provide a space for lowering the second stage (12200). In order to reduce the consumption of the supply gas and achieve a fast reaction, the vertical width of the second upper chamber (12110) may be configured to be approximately 3 mm to 15 cm, and it is preferable to design it as thin as possible.

[0153] The second stage (12200) may be provided to support the substrate (10). The second stage (12200) may be provided with a second heat treatment device (12210). The second heat treatment device (12210) may serve to maintain the temperature of the substrate (10) uniformly. The second heat treatment device (12210) may control the temperature by region (for example, by region divided concentrically) of the substrate by controlling the temperature or flow rate of the coolant (coolant), or may control the temperature of the substrate (10) uniformly by using another cooling method.

[0154] The second stage driving unit (12300) can drive the second stage (12200) upward and downward. When the substrate (10) is transported through the second inlet / outlet (13200) by the substrate transport device (13000) while the second stage (12200) is lowered and is placed on the second stage (12200), the second stage driving unit (12300) can drive the second stage (12200) upward toward the second upper chamber (12110).

[0155] After the second process treatment is performed on the substrate (10), the second stage driving unit (12300) can drive the second stage (12200) downward toward the second lower chamber (12120) for subsequent process treatment (first process treatment in the first process chamber). Thereafter, the substrate (10) supported on the second stage (12200) can be transferred to the first process chamber (11000) where the first process treatment is performed through the second inlet / outlet (13200) and the first inlet / outlet (13100) by the substrate transfer device (13000).

[0156] The first stage drive unit (11300) and / or the second stage drive unit (12300) may include drive devices such as a hydraulic cylinder drive unit, a drive motor / screw shaft drive unit, a drive motor / drive belt drive unit, a wire drive unit, a rack / pinion gear combination drive unit, etc., but it is also possible to raise and lower the stage by various drive devices other than the listed drive devices.

[0157] The substrate transfer device (13000) may be provided by means such as a hand supporting the substrate (10) and a hand driving unit moving the hand between the first process chamber (11000) and the second process chamber (12000) through the first entrance / exit (13100) and the second entrance / exit (13200). Since the substrate transfer device (13000) may be implemented by a hand robot transfer device well known to those skilled in the art of the present invention, a detailed description thereof will be omitted.

[0158] The plasma processor (12400) can generate plasma (P) within the second process chamber (12000) to perform a plasma process on the substrate (10). The plasma processor (12400) can be configured to generate plasma in various ways. The plasma processor (12400) can be configured to generate plasma, for example, by a capacitively coupled plasma (CCP) method or an inductively coupled plasma (ICP) method, but plasma methods other than those listed may also be used. In the illustrated embodiment, an upper bias device (12410) and a lower bias device (12420) are each provided, but a device for applying an upper bias or a lower bias may be omitted as needed.

[0159] The order of the first process treatment and the second process treatment is not particularly limited. That is, the second process treatment may be performed in the second process chamber (12000) after the first process treatment is performed in the first process chamber (11000), or alternatively, the second process treatment may be performed in the second process chamber (12000) after the first process treatment is performed in the first process chamber (11000).

[0160] In an embodiment, the first process temperature at which the first process treatment is performed in the first process chamber (11000) may be higher than the second process temperature at which the second process treatment is performed in the second process chamber (12000). This is because it may be advantageous to quickly transfer more heat to the substrate (10) by the microwave heat treatment device (11400) provided in the first process chamber (11000) to treat the substrate (10) at a high process temperature.

[0161] Meanwhile, a microwave heat treatment device may be provided not only in the first process chamber (11000) but also in the second process chamber (12000). In this case, heat may be supplied to the substrate (10) at high speed not only during the first process treatment but also during the second process treatment, thereby enabling efficient substrate treatment. In this case, the second process temperature at which the second process treatment is performed in the second process chamber (12000) may be higher than the first process temperature at which the first process treatment is performed in the first process chamber (11000).

[0162] Fig. 10 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. The substrate processing device (20000) according to the embodiment of Fig. 10 is different from the embodiment of Fig. 9, which is configured with dual chambers (a first process chamber and a second process chamber), in that it is implemented with a single chamber. The substrate processing device (20000) illustrated in Fig. 10 is configured with a single process chamber (21000), and there is no need to have a substrate transfer device for transferring the substrate between the dual chambers. Therefore, according to the embodiment of Fig. 10, the time required to transfer the substrate (10) between the dual chambers can be reduced, thereby shortening the process time.

[0163] The process chamber (21000) may be provided to perform a first process treatment on a substrate (10) at a first process temperature and to perform a second process treatment on the substrate (10) at a second process temperature different from the first process temperature. For example, the process chamber (21000) may be a reaction chamber in which a series of ALE (atomic layer etching) processes are performed, in which cycles including a modification process, an adsorption process, a purging process, a removal process, and a purging process are repeatedly performed.

[0164] Similar to the embodiment described in FIG. 9, the first process temperature may be a process temperature optimized for the first process treatment, such as a modification / reformation process, an adsorption process, a removal process, etc. of the substrate (10). The first process temperature may be set to a temperature at which the precursor can be effectively adsorbed on the exposed surface layer of the substrate (10), depending on the type of material constituting the substrate (10), the type of precursor gas, etc.

[0165] The first process performed in the process chamber (21000) may include, for example, a modification / modification process for modifying / reforming the surface of the substrate (10) during an ALE process, an adsorption process for adsorbing a precursor onto the surface of the substrate (10), a removal process for removing an adsorption layer formed by a reaction of the precursor with modified silicon of the substrate (10), etc. The second process performed in the process chamber (21000) may include a different process from the first process during an ALE process.

[0166] Similar to the embodiment described in FIG. 9, the second process temperature at which the second process treatment is performed may be a process temperature set to be optimized for the removal process of the substrate (10). The second process temperature may be set to a temperature optimized for the second process treatment, for example, a temperature at which an adsorption layer can be effectively removed from a surface layer of the substrate (10), depending on the type of material constituting the substrate (10), the type of precursor gas, etc.

[0167] The process chamber (21000) may include a reaction chamber (21100), a stage (21200), a stage driver (21300), a microwave heat processor (21400), and a plasma processor (21500). The reaction chamber (21100), the stage (21200), the stage driver (21300), the microwave heat processor (21400), and the plasma processor (21500) are different from the embodiment of FIG. 9 described above in that they are implemented in a single chamber. The description of the components of the embodiment of FIG. 10 that are identical or corresponding to those of the embodiment of FIG. 9 may also be applied to the embodiment of FIG. 10, and thus, any duplicate description may be omitted.

[0168] The reaction chamber (21100) may be provided with an exhaust device (21600) that performs a purging process to exhaust residual gas within the reaction chamber (21100), a gas supplier (not shown) that supplies a process gas such as a precursor gas or a plasma process gas, etc. The stage driving unit (21300) may drive the stage (21200) upward and downward to transport a processed substrate or to transport a substrate before substrate processing. The reaction chamber (21100) may be provided with an entrance / exit (21700) for transporting / exiting a substrate (10). A hand robot (transport robot) for transporting / exiting a substrate (10) may be provided in an area adjacent to the entrance / exit (21700) around the reaction chamber (21100).

[0169] Hereinafter, a process processing step performed in the substrate processing device of FIG. 11 will be described. The substrate processing device of FIG. 11 can perform the process processing step of FIG. 8. When the substrate (10) is supported on the stage (21200) through the inlet / outlet (21700) while the stage (21200) is lowered toward the lower chamber (21120), the stage (21200) is driven upward toward the upper chamber (21110) by the stage driving unit (21300).

[0170] Process gas A is supplied into the reaction chamber (21100) and plasma (P) is generated by the plasma processor (21500), whereby a modified layer (11) that is capable of reacting with a precursor can be formed on the surface of the substrate (10) (S10). A plurality of microwave supply units of the microwave heat processor (21400) can generate microwaves in a first microwave supply pattern that is set or controlled according to the real-time temperature of the substrate so that the modification / modification process can be efficiently performed at the first process temperature.

[0171] When the surface of the substrate (10) is modified, a purging process (S20) for removing unreacted residual process gas A can be performed. Next, process gas B, which undergoes an adsorption reaction on the surface of the substrate (10), is supplied into the reaction chamber (21100), and an adsorption process can be performed (S30) in which a layer (12) in which process gas B is adsorbed on the surface of the substrate (10) is formed. A plurality of microwave supply units of the microwave heat treatment unit (21400) can generate microwaves in a second microwave supply pattern that is set or controlled according to the real-time temperature of the substrate so that the adsorption process can be efficiently performed at the second process temperature.

[0172] By the self-control principle, the process gas is uniformly adsorbed on the modified layer (11) on the exposed surface of the substrate (10), and the residual process gas can be removed from the reaction chamber (21100) by a purging process (S40). Next, the layer (13) adsorbed on the substrate (10) can be removed by plasma treatment, heat treatment, or the like (S50). At this time, since the bonding force between the modified layer (11) on the surface of the substrate (10) and the process gas is stronger than the removal energy, the modified layer (11) on the surface of the substrate (10) is also removed together with the adsorbed layer of the process gas.

[0173] In the removal process, multiple microwave supply units of the microwave heat treatment device (21400) can generate microwaves in a third microwave supply pattern that is set or controlled according to the real-time temperature of the substrate so that the removal process can be efficiently performed at a third process temperature. By repeating a series of cycles of steps S10 to S50 as described above multiple times, the surface of the substrate (10) can be uniformly etched at the atomic layer level.

[0174] According to the substrate processing device according to the embodiment of FIGS. 9 and 10, the amount of heat supplied to the substrate (10) by the microwave heat processor (21400) can be very precisely and uniformly controlled, and the manufacturing cost or maintenance cost of the process equipment can be reduced because a mechanical system for rotating the stage or the microwave heat processor is not required.

[0175] In addition, according to the embodiment of FIG. 10, plasma treatment and heat treatment can be performed continuously within a single process chamber (21000) without the need to transfer the substrate (10) between dual chambers (first process chamber and second process chamber), thereby reducing the time required to transfer the substrate (10) between dual chambers, thereby shortening the process time. In addition, according to the embodiment of FIG. 10, the size of the process equipment can be reduced, and the process equipment cost and the process equipment maintenance / repair time and cost can also be reduced. This is possible because, as described above in the embodiment of FIG. 9, the process temperatures required for plasma, heat treatment, etc. can be quickly adjusted in various microwave supply modes by a plurality of microwave supplyers constituting the microwave heat treatment device (21400).

[0176] Figures 11 to 15 are conceptual diagrams illustrating substrate processing devices according to further embodiments of the present invention. The embodiments of Figures 11 to 15 differ from the previously described embodiments in that they additionally include a microwave reflection structure (31110, 31120, 32110, 33120, 34120, 32200, 33200, 34200, 35200) that effectively reflects microwaves toward the substrate (10) within a process chamber (31000, 32000, 33000, 34000, 35000) constituting the substrate processing device (30000).

[0177] In an embodiment, the microwave reflecting structure (31110, 31120, 32110, 33120, 34120, 32200, 33200, 34200) may include a curved reflecting structure (31110, 31120, 32110, 33120, 34120), such as a semicircle or an ellipse, in the upper corner and / or lower corner region within the reaction chamber (31100, 32100, 33100, 34100) and / or a reflecting structure (32200, 33200, 34200) that is formed to protrude obliquely from the inner surface or the upper or lower corner of the reaction chamber (31100, 32100, 33100, 34100).

[0178] Microwave reflecting structures (31110, 31120, 32110, 33120, 34120, 32200, 33200, 34200) may be provided with a material capable of reflecting microwaves, and may be provided with, for example, a metal material. In the embodiment of FIG. 11, curved reflecting structures (31110, 31120), such as semicircles or ellipses, having a radius of curvature larger than a reference radius of curvature (e.g., 2 mm or more) are provided at the upper and lower edges of the reaction chamber (31100). Such curved reflecting structures (31110, 31120) may have a function of reflecting microwaves toward the substrate (10) so that the substrate (10) may be heat-treated at high speed by the microwaves.

[0179] In the embodiment of FIG. 12, a curved reflective structure (3211), such as a semicircle or an ellipse, having a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more, more preferably 1 cm or more) may be provided at an upper edge of the reaction chamber (32100), and a reflective structure (32200) may be provided at a lower edge of the reaction chamber (32100) so as to protrude and be inclined with respect to the bottom and side surfaces of the reaction chamber (32100). In order for microwaves to be effectively reflected to the substrate (10), the reflective surface (32210) of the reflective structure (32200) may be provided to have an inclination angle (A1) of approximately 15° to 60° with respect to the bottom or horizontal plane of the reaction chamber (32100). The reflective structure (32200) may be provided so that its upper surface slopes downward from the outer diameter to the inner diameter.

[0180] In the embodiment of FIG. 13, a curved reflective structure (33120), such as a semicircle or an ellipse, having a radius of curvature larger than a reference radius of curvature (e.g., 2 mm or more, more preferably 1 cm or more) is provided at a lower edge of the reaction chamber (33100), and a plurality of reflective structures (33200) are provided on an inner surface of the reaction chamber (33100) along a vertical direction (a third direction, Z, perpendicular to the first and second directions). Each reflective structure (33200) may extend in a ring shape along the circumferential direction of the reaction chamber (33100).

[0181] A plurality of reflective structures (33200) may have reflective surfaces (33210) that are inclined at an angle of approximately 15° to 60° with respect to the side (vertical plane) of the reaction chamber (33100), i.e., an angle of approximately 30° to 75° with respect to the horizontal plane (reference numeral 'A2' in FIG. 4b). The reflective structures (33200) may have an approximately triangular shape. For arc prevention, the pointed tip portion (reference numeral '33220' in FIG. 11) of the reflective structures (33200) is preferably designed to have a radius of curvature (R1) of 100 ㎛ or more, and a more preferable radius of curvature (R1) is 500 ㎛ or more.

[0182] In the embodiment of FIG. 14, a curved reflective structure (34120), such as a semicircle or an ellipse, having a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more) is provided at a lower edge of the reaction chamber (34100), and a plurality of reflective structures (34200) may be provided along the vertical direction on the inner surface of the reaction chamber (34100). Each reflective structure (34200) may extend in a ring shape along the circumferential direction of the reaction chamber (34100).

[0183] A plurality of reflective structures (34200) may have reflective surfaces (34210) inclined at an angle of approximately 15° to 60° with respect to the side (vertical plane) of the reaction chamber (34100). The reflective structures (34200) may have an approximately triangular shape. To prevent arcing, it is preferable that the pointed tip portions of the reflective structures (34200) be designed with a radius of curvature of 2 mm or more.

[0184] In the embodiment of FIG. 14, at least two of the plurality of reflective structures (34200) may be designed such that the reflective surfaces (34210) have different inclination angles. In the illustrated embodiment, the upper reflective structure (34200) provided on the upper edge side of the reaction chamber (34100) may be designed to have a gentler inclination angle than the lower reflective structure (34200) provided on the lower side.

[0185] Fig. 15 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. The substrate processing device (30000) according to the embodiment of Fig. 15 is different from the embodiments illustrated in Figs. 11 to 14 in that it further includes a reflective structure driving unit (35300) that adjusts the position or direction of the reflective structure (35200). The reflective structure driving unit (35300) can drive the reflective structure (35200) by driving it up and down, moving it horizontally, or rotating it up and down or horizontally.

[0186] The reflective structure drive unit (35300) may include, for example, a hydraulic cylinder drive, a drive motor / screw shaft drive, a drive motor / drive belt drive, a wire drive, a rack / pinion gear combination drive, etc., but it is also possible to raise, lower, horizontally move, rotate, and drive the reflective structure (35200) up and down by various drive devices other than the listed drive devices.

[0187] As the reflective structure (35200) is driven by the reflective structure driving unit (35300), the position or direction of the reflective surface (35210) changes, and accordingly, the transmission pattern of microwaves transmitted to the substrate (10) can be variously adjusted. The reflective structure driving unit (35300) can drive the reflective structure (35200) so that the reflective surface (35210) is arranged in a set position or direction according to the driving pattern (microwave supply mode) of a plurality of microwave supply units constituting the microwave heat treatment device (35400). According to the embodiment of FIG. 15, the reflective structure (35200) can be driven up and down to provide more diverse microwave heat treatment modes, and uneven heat supply due to interference (constructive interference, destructive interference) of microwaves can be prevented.

[0188] Fig. 16 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Fig. 17 is a cross-sectional view of a stage constituting the substrate processing device illustrated in Fig. 16. The substrate processing device (40000) illustrated in Figs. 16 and 17 differs from the previously described embodiments in that it comprises a process chamber (41000) in which a susceptor (41230) that generates heat by microwaves is provided in the upper region of the stage (41200).

[0189] The stage (41200) may be provided to be able to be raised and lowered by a stage driving unit (41300). The stage (41200) may include a stage body (41220), a susceptor (41230) provided on the stage body (41220), and a protective film (41240) covering the susceptor (41230). A heat treatment device (41210) may be provided on the stage body (41220). The susceptor (41230) may be made of a metal film coated on ceramic or a carbon-based material. The protective film (41240) may be made of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc.

[0190] The susceptor (41230) can be heated by microwaves generated by the microwave heat processor (41400). According to the embodiments of FIGS. 16 and 17, the susceptor (41230) is heated by microwaves generated by the microwave heat processor (41400), and the heat generated by the susceptor (41230) can more effectively transfer heat to the substrate (10).

[0191] Fig. 18 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Fig. 19 is an enlarged view of part 'B' of the substrate processing device illustrated in Fig. 18. The substrate processing device (50000) illustrated in Figs. 18 and 19 differs from the previously described embodiments in that a susceptor (51500) that generates heat by microwaves is provided on the inner wall side of a reaction chamber (51100) constituting a process chamber (51000).

[0192] The reaction chamber (51100) may include chamber walls (51110, 51120, 51130) and a susceptor (51500) provided on the inner wall side of the chamber walls (51110, 51120, 51130). The susceptor (51500) may include a heating layer (51500a) made of a metal thin film or a carbon-based material (e.g., graphite material) coated on ceramic and generating heat by microwaves generated by a microwave heat processor (51400), and a protective film (51500b) covering the heating layer (51500a). For the heating effect by microwaves, the concentration of the carbon-based material in the heating layer (51500a) is preferably 0.5 wt% or more. In addition, the thickness of the metal thin film is preferably 800 μm or less. The protective film (51500a) may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc.

[0193] The susceptor (51500) can be heated by microwaves generated by the microwave heat processor (51400). According to the embodiments of FIGS. 18 and 19, the susceptor (51500) is heated by microwaves generated by the microwave heat processor (51400), and the heat generated by the susceptor (51400) can be used to apply heat to the interior of the reaction chamber (51100), thereby preventing particles or byproducts from attaching (adsorbing) to the inner wall of the reaction chamber (51100).

[0194] The susceptor (51500) may include an upper wall susceptor (51510) provided on an upper wall (51110) of the reaction chamber (51100), a side wall susceptor (51520) provided on a side wall (51120) of the reaction chamber (51100), and an exhaust susceptor (51530) provided on a wall (51130) around an exhaust section (51140). The upper wall susceptor (51510) and the exhaust susceptor (51530) may be designed to have a higher temperature than the side wall susceptor (51520). Accordingly, particle contamination of the upper wall or exhaust section of the reaction chamber (51100) can be effectively prevented.

[0195] In an embodiment, the upper wall susceptor (51510) and the exhaust susceptor (51530) may be designed to have a higher carbon concentration than the side wall susceptor (51520). Accordingly, the carbon concentration of the side wall susceptor (51520) can be reduced by effectively preventing particles from being contaminated or by-products from being adsorbed on the upper wall or exhaust of the reaction chamber (51100) due to heat generation from the susceptor, while reducing the cost associated with applying high-concentration carbon.

[0196] Fig. 20 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Fig. 21 is a plan view of a substrate processing device according to the embodiment of Fig. 20. The embodiments illustrated in Figs. 20 and 21 differ from the previously described embodiments in that each microwave supply (61410) constituting the microwave heat treatment device (61400) has a shutter (61430) that can be opened and closed by a controller (61420).

[0197] The shutter (61430) can control the supply and blocking of microwaves. Each microwave supply (61410) may be configured to generate microwaves by a magnetron, or multiple microwave supplies (61410) may be configured to receive microwaves through a waveguide and supply them into the reaction chamber (61100) through the open shutter (61430).

[0198] Fig. 22 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Referring to Fig. 22, the substrate processing device (70000) can be utilized in an atomic layer deposition process. Referring to Fig. 22, the substrate processing device (70000) can include a first process chamber (71000), a second process chamber (72000), and a substrate transfer device (73000) for transferring a substrate (10) between the first process chamber (71000) and the second process chamber (72000).

[0199] The first process chamber (71000) may be a process chamber that performs a first process treatment on a substrate (10) at a first process temperature. In one embodiment, the first process chamber (71000) may be a reaction chamber that performs an etching process for etching a substrate (10) on which an atomic layer deposition process using plasma has been performed by heat treatment. The first process temperature may be a process temperature that is set to be optimized for the etching process of the substrate (10).

[0200] The first process temperature may be set to a temperature at which the substrate (10) can be effectively etched, depending on the type of material constituting the substrate (10), the type of precursor gas, etc. The first process temperature does not necessarily mean a specific temperature value, but rather encompasses a process temperature range, a process temperature profile, or a statistical processing value thereof (e.g., an average value).

[0201] The second process chamber (72000) may be a process chamber that performs a second process treatment on the substrate (10) at a second process temperature different from the first process temperature. Accordingly, the first process chamber (71000) and the second process chamber (72000) may perform treatment on the substrate (10) at different process temperatures. In one embodiment, the second process chamber (72000) may be a reaction chamber in which an atomic layer deposition process is performed on the substrate (10). The second process temperature may be a process temperature that is optimized for an atomic layer deposition process using plasma (P).

[0202] The second process temperature may be set to a temperature at which the adsorption layer can be effectively removed from the surface layer of the substrate (10) depending on the type of material constituting the substrate (10), the type of precursor gas, etc. The second process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range, a process temperature profile, or a statistical processing value thereof (e.g., an average value).

[0203] The first process chamber (71000) may include a first reaction chamber (71100), a first stage (71200), a first stage driver (71300), and a microwave heat processor (71400). Although not shown, the first reaction chamber (71100) may be provided with a gas supply (not shown) for supplying a first process gas such as a gas or precursor, an exhaust device for performing a purging process to exhaust residual gas within the first reaction chamber (71100), etc.

[0204] The second process chamber (72000) may include a second reaction chamber (72100), a second stage (72200), a second stage driver (72300), and a plasma processor (72400). The second reaction chamber (72100) may be configured to accommodate the second stage (72200), the second stage driver (72300), and the plasma processor (72400).

[0205] The plasma processor (72400) can generate plasma (P) within the second process chamber (72000) to perform a plasma atomic layer deposition process on the substrate (10). The plasma processor (72400) can be provided as a plasma generator of the CCP (capacitively coupled plasma) and / or ICP (inductively coupled plasma) type. In the illustrated embodiment, devices for applying upper and lower biases are respectively provided, but the device for applying the lower bias may be omitted as needed.

[0206] According to the embodiment of FIG. 22, after performing an atomic layer deposition process on the substrate (10) in the second process chamber (72000), an etching process on the substrate (10) can be performed in the first process chamber (71000). In the process of performing the atomic layer deposition process on the micro-groove on the substrate (10) in the second process chamber (72000), a void may be generated within the micro-groove. However, by performing a process such as thermal curing and / or anisotropic etching (removing the upper entrance portion of the micro-groove) in the first process chamber (71000) after performing the atomic layer deposition process, the generation of the void can be prevented within the micro-groove on the substrate (10).

[0207] Fig. 23 is a conceptual diagram illustrating a substrate processing device according to another embodiment of the present invention. Referring to Fig. 23, the substrate processing device (80000) differs from the previously described embodiments in that it further includes a heat treatment device driving unit (81500) that drives the microwave heat treatment device (81400) upward and downward. According to the embodiment of Fig. 23, by driving the microwave heat treatment device (81400) upward and downward, more diverse microwave heat treatment modes can be provided, and uneven heat supply due to microwave interference (constructive interference, destructive interference) can be prevented.

[0208] In Fig. 23, an embodiment of driving the microwave heat treatment device (81400) in an upward and downward direction is illustrated, but the microwave heat treatment device (81400) may be driven in rotation to generate microwaves of various patterns by a plurality of microwave supply devices. The microwave heat treatment device (81400) may include, for example, a driving device such as a hydraulic cylinder driving device, a driving motor / screw shaft driving device, a driving motor / driving belt driving device, a wire driving device, or a rack / pinion gear combination driving device. However, in addition to the driving devices listed, the microwave heat treatment device (81400) may also be driven in an upward and downward direction, horizontal movement, and rotation by various driving devices.

[0209] As described above, according to an embodiment of the present invention, a microwave heat treatment device is configured with a plurality of microwave supply units, and microwaves can be generated in various supply modes by controlling the operation of the plurality of microwave supply units (controlling the microwave output). Accordingly, the process temperature can be quickly adjusted to perform the process at an appropriate process temperature required for the substrate, and uniform processing can be performed even on large substrates.

[0210] Therefore, the substrate processing device and the substrate processing method according to the embodiment of the present invention can be effectively utilized not only in the planar FET or FinFET process, but also in the manufacturing process of GAA (gate all around) FET, and further, MBC (multi-bridge channel) FET devices. The substrate processing device and the substrate processing method according to the embodiment of the present invention can be effectively utilized in the process of, for example, etching the inter-area of ​​nanosheets of MBC (multi-bridge channel) FET devices at a fine nano-unit level at high speed, yet precisely and minutely.

[0211] FIGS. 24 and 25 illustrate substrate processing equipment including a substrate processing device.

[0212] The substrate processing equipment (1) may include one or more substrate processing devices (100) as described above. The substrate processing device (100) of one embodiment of the present disclosure can precisely and uniformly control the amount of heat supplied to the substrate by microwaves, and can perform a process using plasma and a heat treatment process in one chamber, thereby reducing the time required to transfer the substrate between the heat treatment process chamber and the plasma process chamber compared to the conventional technology in which the heat treatment process is performed in a separate chamber, and can be space-efficient by processing two processes in an integrated chamber. In addition, heat treatment using microwaves allows for faster heat treatment, and has the advantage of making the substrate processing device (100) more compact compared to a case in which heat treatment is performed using light heating, a laser, etc. The substrate processing equipment (1) includes a plurality of miniaturized substrate processing devices (100) to enable the implementation of a semiconductor processing facility in a space-efficient manner.

[0213] The substrate processing equipment (1) may include a substrate transfer unit (2) for transferring a substrate to one or more substrate processing devices (100). The substrate transfer unit (2) is configured as a robotic arm having an arbitrary shape, and can obtain a substrate (10) from an input / output unit (5) and transfer it to the substrate processing device (100), and can transfer a substrate whose process has been completed from the substrate processing device (100) to the input / output unit (5) to transfer the substrate to the next process of the substrate processing equipment (1).

[0214] The loading / unloading unit (5) may include an loading / unloading unit (3) in which substrates are transferred from external equipment to the substrate processing equipment (1) and an unloading unit (4) in which substrates with completed processing are transferred to the external equipment. The loading / unloading unit and the unloading unit may exchange substrates with an OHT (overhead hoist transport) facility.

[0215] As described above, the substrate processing device (100) of one embodiment of the present disclosure can perform all processes for atomic layer etching in one chamber, thereby saving horizontal space, and can also save vertical space by using a microwave heat source that is relatively small compared to light, heat rays, etc. Accordingly, the substrate processing equipment (1) may include a plurality of substrate processing devices (100) horizontally, as in the example of FIG. 9, and may include a plurality of substrate processing devices (100) vertically stacked, as in FIG. 10. Although not shown in FIGS. 9 and 10, the substrate processing equipment (1) may have a gas line for supplying and exhausting gas connected to the same floor as the substrate processing equipment (1) or to a basement floor of the substrate processing equipment (1).

[0216] It should be understood that the specific order or hierarchy of steps in the presented processes is merely an example of exemplary approaches. It should be understood that the specific order or hierarchy of steps in the processes may be rearranged within the scope of the present disclosure based on design priorities. The appended method claims provide elements of various steps in a sample order, but are not intended to be limited to the specific order or hierarchy presented.

[0217] The description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the scope of the present disclosure. Therefore, the present disclosure is not intended to be limited to the embodiments disclosed herein, but is to be construed in the broadest scope consistent with the principles and novel features disclosed herein.

[0218] As described above, the relevant contents have been described in the best form for carrying out the invention.

[0219] The present invention can be used in semiconductor manufacturing devices, etc.

Claims

1. As a substrate processing device, An upper chamber where plasma treatment of the substrate is performed; A lower chamber in which heat treatment is performed on the above substrate; A microwave heat treatment device that generates microwaves within the lower chamber to transfer heat to the substrate; and A stage that supports a substrate and can be raised and lowered to move the substrate to a predetermined position according to a process for the substrate; including, Substrate processing device.

2. In paragraph 1, The upper chamber is, A gas supply unit including a buffer and showerhead for a plasma process. Substrate processing device.

3. In paragraph 2, The shower head of the above gas supply unit is, Having a sloped structure from the center of the substrate to the periphery of the substrate, Substrate processing device.

4. In paragraph 2, The shower head of the above gas supply unit is, Supplying gas to the upper chamber through at least one of the inclined holes or the buffer holes, Substrate processing device.

5. In paragraph 1, The upper chamber is, Including an upper plasma generating unit for plasma generation in the upper chamber, Substrate processing device.

6. In paragraph 1, The upper chamber is, Including a gas exhaust port through which process gas is exhausted on the side, Substrate processing device.

7. In paragraph 6, The above gas exhaust part, A coating is added to maintain plasma inside the upper chamber and prevent adsorption of by-products. Substrate processing device.

8. In paragraph 6, The above gas exhaust part, Symmetrically configured around the above substrate, Substrate processing device.

9. In paragraph 1, The upper chamber is, Accelerates gas supply and exhaust, and is configured to have a height of 0.1 cm to 5 cm for plasma formation. Substrate processing device.

10. In paragraph 1, A stage step protruding in the direction of the stage between the upper chamber and the lower chamber; including more, Substrate processing device.

11. In paragraph 10, The above stage step is, Including a gasket that prevents gas exchange between the upper chamber and the lower chamber during a process on the substrate in the upper chamber. Substrate processing device.

12. In paragraph 1, The inner surface of the above lower chamber is, Containing a coating that prevents adsorption of by-products or particles; Substrate processing device.

13. In paragraph 1, A gas supply unit for supplying an inert gas to the lower chamber; including more, Substrate processing device.

14. In paragraph 13, The above lower chamber, In order to prevent the process gas from flowing into the upper chamber during the process treatment in the upper chamber for the substrate, the inert gas is supplied at a higher pressure than the upper chamber. Substrate processing device.

15. In paragraph 1, The above microwave heat treatment device, At least one of the side of the lower chamber, the lower surface of the stage step, or the upper surface of the upper chamber gas supply part is disposed, Substrate processing device.

16. In paragraph 15, The above microwave heat treatment device, A plurality of microwave sources are included, wherein the plurality of microwave sources are arranged symmetrically or asymmetrically around the substrate. Substrate processing device.

17. In paragraph 16, The above plurality of microwave supply devices are, Switching between different microwave supply modes to generate microwaves within the lower chamber to transfer heat to the substrate; Substrate processing device.

18. In paragraph 17, The above various microwave supply modes are modes in which microwaves are supplied into the lower chamber by a combination of at least one of the plurality of microwave supplyers. Substrate processing device.

19. In paragraph 1, The above stage is, Supporting the substrate by electrostatic bonding or mechanical bonding, Substrate processing device.

20. In paragraph 1, The above stage is, Comprising an upper plasma generating unit and a lower plasma generating unit for generating plasma or applying a bias to the plasma, Substrate processing device.

21. In paragraph 1, The above stage is, Moving up or down by an elevator, supporting the substrate at a first position where a plasma process is performed or a second position where a heat treatment process is performed. Substrate processing device.

22. In paragraph 1, In the upper chamber, a surface modification process and an adsorption layer formation process are performed during an atomic layer etching (ALE) process for the substrate, and in the lower chamber, a heat treatment process is performed during the atomic layer etching process. Substrate processing device.

23. In paragraph 22, In the upper chamber, surface modification for atomic layer etching of the substrate is performed through plasma treatment in an atomic layer etching process for the substrate, thereby generating a modified layer on the substrate, and In the lower chamber, the formation of the modified layer is promoted through heat treatment using a microwave heat treatment device for the substrate. Substrate processing device.

24. In paragraph 23, In the upper chamber, an adsorption layer is formed by gas treatment on a substrate on which a modification layer is formed, and the modification layer and the adsorption layer are removed by plasma treatment, and In the lower chamber, the removal of the modified layer and the adsorption layer is promoted through heat treatment using a microwave heat treatment device for the substrate. Substrate processing device.

25. As a substrate processing equipment, An upper chamber where plasma treatment of the substrate is performed; A lower chamber in which heat treatment is performed on the above substrate; A microwave heat treatment device that generates microwaves within the lower chamber to transfer heat to the substrate; and A stage that supports a substrate and can be raised and lowered to move the substrate to a predetermined position according to a process for the substrate; comprising at least one substrate processing device, A substrate transfer unit for transferring the substrate to the one or more substrate processing devices; including, Substrate processing equipment.

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