Chip-package-to-waveguide conversion apparatus, radio-frequency apparatus and radar apparatus

Abstract

Disclosed in the present application are a chip-package-to-waveguide conversion apparatus, a radio-frequency apparatus and a radar apparatus. The conversion apparatus in the embodiments of the present application is a simple chip-package-to-waveguide transition structure having a low loss and a wide impedance bandwidth. The conversion apparatus in the embodiments of the present application has the characteristics of ensuring low loss while having a wider bandwidth, avoids the design of an excessively narrow gap, and avoids RF performance deterioration caused by gap machining errors, such that the RF performance of the chip-package-to-waveguide transition structure is ensured.

Description

Chip package to waveguide conversion devices, RF devices and radar devices

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on September 28, 2023, with application number 202311284003.8 and invention name “Chip package to waveguide conversion device, radio frequency device and radar device”, the contents of which should be understood as incorporated into this application by reference. Technical Field

[0002] The present application relates to, but is not limited to, semiconductor radio frequency technology, and in particular to a chip package to waveguide conversion device, a radio frequency device, and a radar device. Background Art

[0003] Converting RF signals from the chip package to an external structure is a complex technology. The RF signal from the bare chip first enters the chip package and then, through a connecting structure, is converted to an external waveguide / microstrip line / coaxial line or other transmission structure. An air waveguide is a structure used to transmit electromagnetic waves. It can be a hollow metal tube or a dielectric tube, used to guide the propagation of microwaves, millimeter waves, or light waves. Air waveguides offer low loss, a wide impedance bandwidth, and are easy to connect and integrate with other modules. Given these advantages, converting the chip's RF signal to an air waveguide is an essential engineering technology.

[0004] Implementing this technology requires considering the following issues: What structure should be used to convert the radio frequency (RF) signal in the chip package to an external waveguide to achieve low loss and wide impedance bandwidth characteristics? This is a technical problem that needs to be solved urgently.

[0005] SUMMARY OF THE INVENTION

[0006] The present application provides a chip package to waveguide conversion device, a radio frequency device, and a radar device, which have a simple structure and can ensure the RF performance of the chip package to waveguide transition structure.

[0007] An embodiment of the present invention provides a chip package to waveguide conversion device, comprising: a first metal layer as a metal layer, a second metal layer, a third metal layer, a shielding metallized through hole, a conversion through hole, and a dielectric substrate provided between different metal layers to play a supporting role; wherein,

[0008] The second metal layer is used for laying out radio frequency (RF) wiring;

[0009] The third metal layer is used to set the patch component; the capacitor formed between the RF trace on the second metal layer and the patch component on the third metal layer introduces a capacitance characteristic;

[0010] The plurality of shielding metallized through holes are grounding through holes surrounding the patch component and the RF traces, and are used to guide the propagation of RF signals;

[0011] At least one of the conversion metallized through holes is provided on one end of the RF trace close to the patch component, for connecting the RF trace and the patch component and introducing inductance characteristics.

[0012] In an exemplary embodiment, the invention further comprises a connecting structure connecting the chip package and the waveguide structure, wherein the connecting structure forms a waveguide cavity surrounding the patch element;

[0013] The RF signal of the chip passes through the RF wiring and the patch element, and is converted into the waveguide structure through the waveguide cavity.

[0014] In an exemplary embodiment, the connection structure is a ball grid array (BGA) solder ball, or a connection structure formed by a surface metallized material.

[0015] In an exemplary embodiment, the waveguide structure is provided with an inner cavity, and the inner cavity is rectangular, elliptical, circular, or ridge-shaped.

[0016] In an exemplary embodiment, the RF trace is: a substrate integrated waveguide (SIW), a microstrip line, a stripline, or a coplanar waveguide.

[0017] In an exemplary embodiment, the RF trace is a single-branch trace or a multi-branch trace;

[0018] One end of each branch close to the patch element is provided with a conversion metallization through hole.

[0019] In an exemplary embodiment, the RF trace is a single-branch trace; the single-branch trace is a half-Y-shaped single-branch trace;

[0020] The RF routing is a multi-branch routing; the multi-branch routing is a symmetrical fork-shaped three-branch routing.

[0021] In an exemplary embodiment, a projection of the RF trace on the third metal layer at least partially overlaps with the patch element.

[0022] In an exemplary embodiment, the overlapping length L of the projection of the RF trace on the third metal layer and the patch element is long enough to form a capacitor between the RF trace and the patch element, and to form a broadband resonant structure with the resonant circuit formed by the inductance introduced by the conversion metallized through hole.

[0023] In an exemplary embodiment, the overlapping length L is greater than or equal to one third of the length of the patch element.

[0024] In an exemplary embodiment, the RF trace is symmetrically fed or asymmetrically fed.

[0025] In one exemplary embodiment, the patch element comprises a rectangular patch.

[0026] In an exemplary embodiment, the connection structure includes a plurality of solder balls arranged in a circle around the patch element, and the plurality of solder balls constitute a waveguide cavity for the patch element to transmit signals; the inner circle formed by the plurality of solder balls includes at least one ridge protruding inwardly.

[0027] In an exemplary embodiment, the inner ring is a rectangular inner ring with the ridge provided therein.

[0028] In an exemplary embodiment, there is one ridge; the ridge is located in the middle of one side of the rectangular inner circle.

[0029] In an exemplary embodiment, there is one ridge; the ridge is located at a corner of the inner circle of the rectangle.

[0030] In an exemplary embodiment, the ridges include two ridges; the two ridges are respectively located in the middle of two opposite sides of the rectangular inner circle.

[0031] In an exemplary embodiment, the ridges include two ridges, and the two ridges are respectively arranged at two opposite corners of the rectangular inner circle.

[0032] In an exemplary embodiment, the inner ring is a circular ring or an elliptical ring with the ridge provided therein.

[0033] The chip package to waveguide conversion device provided in the embodiment of the present application is a chip package to waveguide transition structure with a simple structure, low loss, and wide impedance bandwidth. It avoids the gap in the E-shaped patch and the problem of frequency deviation caused by processing errors, thereby ensuring broadband and low loss characteristics.

[0034] The present application also provides a radio frequency device, comprising: a package with an IC bare chip, and a PCB board; wherein the package further comprises the chip package to waveguide conversion device described in any one of the above items; and the PCB board is provided with a waveguide structure;

[0035] The RF signal from the IC die is converted into the waveguide structure through the patch element in the conversion device.

[0036] In an exemplary embodiment, a waveguide hole is further provided on the PCB board at a position corresponding to the patch element in the conversion device, and the IC bare chip transmits signals to the waveguide hole through the RF traces, patch elements, and waveguide channels in the conversion device.

[0037] In an exemplary embodiment, the cross-sectional shape of the waveguide hole is the same as the inner circle shape of the multiple solder balls surrounding the patch element; the package body is mounted on the PCB board, and the multiple solder balls are arranged in a circle around the boundary of the waveguide hole.

[0038] An embodiment of the present application further provides a radar device, comprising any one of the above-mentioned radio frequency devices; and an antenna structure electrically connected to the radio frequency device.

[0039] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purposes and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0040] Summary of the Figures

[0041] The accompanying drawings are used to provide a further understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0042] FIG1( a ) is an oblique top view of a component structure of a transition structure from chip packaging to waveguide;

[0043] FIG1( b ) is a front view of a structure for transitioning from a chip package to a waveguide;

[0044] FIG2( a ) is a top view of the structure of a conversion device transitioning from chip packaging to waveguide in an embodiment of the present application;

[0045] FIG2( b ) is a front view of the structure of the conversion device from chip packaging to waveguide in an embodiment of the present application;

[0046] FIG3( a ) is a schematic diagram of a form of RF routing in an embodiment of the present application;

[0047] FIG3( b ) is a schematic diagram of another form of RF routing in an embodiment of the present application;

[0048] FIG3( c ) is a schematic diagram of another form of RF routing in an embodiment of the present application;

[0049] FIG4 is a schematic diagram showing the RF performance results of a chip package to waveguide conversion device according to an embodiment of the present application;

[0050] FIG5 is a schematic top view of a first arrangement of multiple solder balls in an embodiment of the present application;

[0051] FIG6 is a schematic top view of a second arrangement of multiple solder balls in an embodiment of the present application;

[0052] FIG7 is a schematic top view of a third arrangement of multiple solder balls in an embodiment of the present application;

[0053] FIG8 is a schematic top view of a fourth arrangement of multiple solder balls in an embodiment of the present application;

[0054] FIG9 is a schematic top view of a fifth arrangement of multiple solder balls in an embodiment of the present application;

[0055] FIG10 is a top perspective view of a radio frequency device according to an embodiment of the present application;

[0056] FIG11 is a schematic top view of a PCB board in an embodiment of the present application.

[0057] Details

[0058] To make the purpose, technical solutions and advantages of this application more clear, the embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be noted that, unless there is a conflict, the embodiments and features in the embodiments of this application can be combined with each other in any way.

[0059] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0061] It is understood that the terms "first" and "second" used in this application are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0062] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if there is transmission of electrical signals or data between the connected circuits, modules, units, etc.

[0063] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Furthermore, the term "and / or" as used in this specification includes any and all combinations of the relevant listed items.

[0064] Figure 1(a) shows an oblique top view of the components of a transition structure from chip package to waveguide, and Figure 1(b) shows a front view thereof. As shown in Figures 1(a) and 1(b), in the chip package, an RF transmission line passes through an E-shaped patch 11 and through a cavity formed by solder balls 12, converting the RF signal from this cavity to a rectangular waveguide. Slots 14 in E-shaped patch 11 provide capacitance, while metallized vias 13 on E-shaped patch 11 (connecting the RF transmission line and E-shaped patch 11) provide inductance. The equivalent resonant circuits of the two form a broadband resonant structure. However, due to the limited machining accuracy of slots 14 in E-shaped patch 11, the transition structures shown in Figures 1(a) and 1(b) may experience frequency deviation. Since the resonant frequency is sensitive to the length and width of slots 14 in the transition structure, the RF performance of the transition device from chip package to waveguide shown in Figures 1(a) and 1(b) may be degraded.

[0065] In order to ensure the RF performance of the conversion structure from chip package to waveguide, the embodiment of the present application provides a chip package to waveguide conversion device, as shown in Figures 2(a) and 2(b), which can include: a first metal layer 1, a second metal layer 2, a third metal layer 3, a shielding metallized through hole 4, a conversion through hole 5, a connecting structure 6, and a dielectric substrate 7 provided between different metal layers to play a supporting role; wherein,

[0066] The first metal layer 1 is a metal ground layer. In one embodiment, the first metal layer 1 is entirely made of metal and is used as a reference ground for the third metal layer 3 .

[0067] The second metal layer 2 is provided below the first metal layer 1. The second metal layer 2 is used to lay out RF traces, such as the exemplary "Y"-shaped trace in Figure 2(a). Capacitive characteristics are introduced through the capacitance formed between the RF trace on the second metal layer 2 and the patch component on the third metal layer 3. In one embodiment, an RF reference ground is provided around the RF trace. In the embodiment of the present application, the structure between the second layer RF trace and the patch component on the third metal layer 3 changes the structure of the E-type patch structure that provides capacitive characteristics through the gap.

[0068] The third metal layer 3 is provided below the second metal layer 2 and is used for arranging patch components. In one embodiment, an RF reference ground is provided around the patch components.

[0069] Multiple shielding metallized vias 4 are provided between the first metal layer 1 and the third metal layer 3 around the patch components and RF traces. The multiple shielding metallized vias 4 are grounding vias around the patch components and RF traces, and are used to guide RF signal propagation and prevent leakage.

[0070] At least one conversion metallized through hole 5 is provided on one end of the RF trace close to the patch component, between the second metal layer 2 and the third metal layer 3, for connecting the RF trace and the patch component and introducing inductance characteristics.

[0071] The chip package to waveguide conversion device provided in the embodiment of the present application, on the one hand, forms a capacitive characteristic between the RF traces arranged on the second metal layer 2 and the patch elements arranged on the third metal layer 3, replacing the structure in the E-type patch structure shown in Figures 1(a) and 1(b) that provides capacitive characteristics through the gap. On the other hand, the inductive characteristics of the conversion structure are introduced through the conversion metallized through-hole 5 provided between the second metal layer 2 and the third metal layer 3. The equivalent circuit of the two constitutes a broadband resonant structure. The chip package to waveguide conversion device provided in the embodiment of the present application is a chip package to waveguide transition structure with a simple structure, low loss, and a wide impedance bandwidth. It avoids the problem of frequency deviation that may occur due to the processing accuracy of the gap in the E-shaped patch 11, and ensures broadband low-loss characteristics.

[0072] In the embodiment of the present application, the first metal layer 1, the second metal layer 2, the third metal layer 3, the shielding metallized through-hole 4, the conversion metallized through-hole 5, and the substrate medium 7 constitute a packaging structure or a part of the packaging structure. In an exemplary embodiment, the chip package to waveguide conversion device provided in the embodiment of the present application can convert the RF signal from the chip through the RF trace on the second metal layer 2 into the waveguide structure 8 through the waveguide cavity surrounded by the connecting structure 6. In one embodiment, the patch element provided on the third metal layer 3 serves as a signal conversion device, receives the signal transmitted from the chip to the RF trace, converts the signal to the waveguide structure 8, or receives the signal from the waveguide structure 8 and converts it to the RF trace, and finally receives it inside the chip.

[0073] In an exemplary embodiment, the connection structure 6 may be a ball grid array (BGA) solder ball, or a surface metallized material connection structure.

[0074] In one exemplary embodiment, the waveguide structure 8 is provided with a waveguide cavity, which can be rectangular, elliptical, circular, or ridge-shaped. In one embodiment, the waveguide structure 8 can be a PCB with waveguide holes, a full metal waveguide, or a plastic waveguide with metalized surface. The waveguide structure 8 and the chip package are located on both sides of the conversion device provided in the embodiment of the present application.

[0075] In an exemplary embodiment, the RF trace may include, but is not limited to, traces such as substrate integrated waveguide (SIW), microstrip, stripline, or coplanar waveguide.

[0076] In an exemplary embodiment, the RF trace in the transmission line transition may be a single-branch trace or a multi-branch trace.

[0077] In one embodiment, as shown in Figures 3(a) and 3(c), the RF trace is an exemplary single-branch trace in a half-Y shape, with a conversion metallized via 5 provided at one end of the branch near the patch component. In some embodiments, the single-branch RF trace can also be a straight trace or a trace with other curved shapes.

[0078] In one embodiment, as shown in FIG3( b ), the RF trace is an exemplary symmetrical fork-shaped trace, including three branches, with a conversion metallization via 5 provided at one end of each branch near the patch element. Compared to a single-branch RF trace, a multi-branch symmetrical RF trace has better transmission efficiency.

[0079] In one exemplary embodiment, the projection of the RF trace on the third metal layer 3 at least partially overlaps with the patch element, so that the capacitance formed between the patch element and the RF trace introduces a capacitive characteristic. In one embodiment, as shown in FIG3( b ), the overlapping length L of the projection of the RF trace on the third metal layer 3 and the patch element is sufficiently long so that the resonant circuit formed by the capacitance formed between the RF trace and the patch element and the inductance introduced by the conversion metallized through-hole 5 can form a broadband resonant structure. In one embodiment, the overlapping length L can be greater than or equal to one-third of the length of the patch element. It should be noted that the length of the patch element refers to the length of the patch element in the direction in which the RF trace extends.

[0080] In one embodiment, the RF trace may be symmetrically fed or asymmetrically fed.

[0081] In an exemplary embodiment, the patch element provided on the third metal layer 3 may include, but is not limited to, a rectangular patch.

[0082] In an exemplary embodiment, the dielectric substrates 7 between different metal layers may be different dielectric substrates.

[0083] Figure 4 is a schematic diagram of the RF performance results of the chip package to waveguide transition device in an embodiment of the present application. As shown in Figure 4, the horizontal axis represents frequency (in GHz), the left vertical axis represents return loss (in dB), and the right vertical axis represents insertion loss (in dB). Figure 4 shows the return loss and insertion loss over the frequency range of 70 GHz to 85 GHz, where the solid line curve represents the return loss curve and the dashed line curve represents the insertion loss curve. The curves in Figure 4 demonstrate the RF performance of the chip package to waveguide transition structure in the automotive millimeter-wave radar frequency band, achieving high transmission efficiency, low loss, and wide bandwidth across the entire frequency range, ensuring RF performance.

[0084] In one exemplary embodiment, the connection structure includes multiple solder balls arranged in a circle around the patch element, forming a waveguide cavity for the patch element to transmit signals. In one embodiment, as shown in Figure 5, the multiple solder balls 2a form a rectangular inner circle. In other embodiments, the multiple solder balls 2a can also form a circular inner circle, a polygonal inner circle, or an inner circle of other shapes. The number of solder balls 2a can also be adjusted according to the circumstances, and is not limited here.

[0085] In an exemplary embodiment, in order to further reduce the area occupied by the package transition structure, the inner circle formed by multiple solder balls includes at least one ridge protruding into the circle, so that the multiple solder balls are arranged in a ridge shape, wherein each ridge can be composed of one or more solder balls; in one embodiment, as shown in Figure 6, the ridge 21 is composed of a solder ball 2b.

[0086] Since the inner circle surrounded by the multiple solder balls 2b is provided with a ridge protruding toward the inner circle, the cavity surrounded by the multiple solder balls 2b forms a ridge waveguide cavity; wherein, the ridge waveguide cavity can be understood as a rectangular waveguide cavity that is bent inwardly. After bending, the length of the longest side of the cavity remains unchanged, so the transmission performance remains unchanged. However, after the cavity is bent, the area occupied by the cavity can be reduced, and the number of solder balls surrounding the cavity can also be reduced, so as to ensure that the performance of the radiation plate will not be reduced when multiple solder balls transmit signals.

[0087] In one embodiment, as shown in FIG6 , a plurality of solder balls 2b are arranged in a rectangular inner circle. Since a ridge 21 is provided in the rectangular inner cavity, this cavity structure forms a ridge waveguide structure, which reduces the cutoff frequency of the waveguide cavity formed by the solder balls. Due to the reduction in the cutoff frequency, the long side of the waveguide cavity surrounded by the solder balls can be shortened while ensuring the transmission performance. Compared with the arrangement of the rectangular cavity formed by the solder balls in FIG5 , the ridge waveguide structure surrounded by the plurality of solder balls 2b in FIG6 has a reduced overall area occupied by the solder balls. The solder ball arrangement in FIG6 ensures that the performance will not be reduced when the plurality of solder balls 2b transmit signals for the patch components.

[0088] In one exemplary embodiment, only one ridge 21 is provided on the rectangular inner circle formed by the plurality of solder balls 2b. The position of the ridge 21 can be adjusted according to specific needs. In one embodiment, as shown in FIG6 , the ridge 21 is located in the middle of one side of the rectangular inner circle. Alternatively, as shown in FIG8 , the ridge 21 can be located at a corner of the rectangular inner circle.

[0089] In one exemplary embodiment, the rectangular inner circle formed by the plurality of solder balls 2b may also be provided with multiple ridges 21. The number and placement of the ridges 21 can be adjusted according to specific needs. In one embodiment, as shown in FIG7 , the rectangular inner circle is provided with two ridges 21, each located midway between two opposing sides. In another embodiment, as shown in FIG9 , the rectangular inner circle is provided with two ridges 21, each located at two opposing corners.

[0090] The embodiment of the present application further provides a radio frequency device, comprising at least: a package with an IC bare chip, and a PCB board;

[0091] In which, the package body also includes a chip package to waveguide conversion device as described in any one of the embodiments of the present application, and the waveguide structure is arranged on a PCB board; the RF signal from the IC bare chip is converted into the waveguide structure through the patch element in the conversion device.

[0092] In an exemplary embodiment, the waveguide structure is a waveguide hole provided on a PCB board and corresponding one-to-one to the patch element in the conversion device. The IC bare chip transmits signals to the waveguide hole through a waveguide cavity surrounded by RF traces, patch elements, and multiple solder balls in the conversion device.

[0093] In an exemplary embodiment, the cross-sectional shape of the waveguide hole is the same as the shape of the cavity surrounded by multiple solder balls around the patch element; the package body is mounted on the PCB board, and the multiple solder balls are arranged in a circle around the boundary of the waveguide hole to ensure that the signal is smoothly transmitted from the waveguide cavity surrounded by the solder balls to the waveguide hole, which is beneficial to reducing signal transmission loss and improving signal transmission efficiency.

[0094] Taking the example of an inner circle formed by multiple solder balls including a ridge protruding inwardly, as shown in FIG10 , FIG10 shows the structure of a radio frequency device in this embodiment. The radio frequency device includes a package body in which an IC bare chip (not shown) is encapsulated, and a patch element 19 is provided on the surface of the package body. The IC bare chip is electrically connected to the patch element 19 via the above-mentioned RF trace. The surface of the package body is also provided with multiple solder balls 2b. The multiple solder balls 2b and the patch element 19 are provided on the surface of the same side of the package body, and the multiple solder balls 2b are arranged around the patch element 19. The package body is connected to the PCB board 3 via the multiple solder balls 2b. The multiple solder balls are arranged in a circle around the boundary of the waveguide hole. The cross-sectional shape of the waveguide hole 31 provided on the PCB board 3 is the same as that of the inner circle formed by the multiple solder balls, and also has a ridge 32, as shown in FIG11 .

[0095] In one embodiment, the signal emitted by the IC die is transmitted to patch component 19, which then radiates the signal into a waveguide cavity formed by multiple solder balls 2b, which then transmits the signal to a waveguide hole on the PCB. The signal is further transmitted from the waveguide hole into a waveguide cavity formed by multiple solder balls 2b, which then transmits the signal to patch component 19, which then transmits the signal to the IC die.

[0096] In an exemplary embodiment, one or more patch elements 19 may be provided on the surface of the package body, and each patch element 19 is connected to the IC bare chip through the above-mentioned RF traces; at the same time, a circle of solder balls is arranged around each patch element 19, and the number of waveguide holes on the PCB board also corresponds one-to-one to the number of patch elements 19.

[0097] An embodiment of the present application also provides a radar device, comprising at least: the radio frequency device described in any one of the embodiments of the present application; and an antenna structure connected to a waveguide hole on a PCB board to realize signal transmission, wherein the antenna structure is preferably a waveguide antenna structure.

[0098] Although the embodiments disclosed in this application are as described above, the contents described are merely embodiments adopted to facilitate understanding of this application and are not intended to limit this application. Any person skilled in the art to which this application belongs may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in this application. However, the scope of patent protection of this application shall still be based on the scope defined by the attached claims.

Claims

1. A chip package to waveguide conversion device, comprising: The first metal layer, the second metal layer, the third metal layer, the shielding metallized through hole, the conversion through hole, and the dielectric substrate provided between the different metal layers for supporting function are used as the metal stratum; wherein, The second metal layer is used for laying out radio frequency (RF) wiring; The third metal layer is used to set the patch element; the capacitor formed between the RF routing on the second metal layer and the patch element on the third metal layer introduces a capacitance characteristic; The plurality of shielding metallized through holes are grounding through holes surrounding the patch element and the RF traces, and are used to guide the propagation of RF signals; At least one of the conversion metallized through holes is arranged on one end of the RF trace close to the patch component, and is used to connect the RF trace and the patch component and introduce inductance characteristics.

2. The chip package to waveguide conversion device according to claim 1, further comprising a connection structure connecting the chip package and the waveguide structure, wherein the connection structure forms a waveguide cavity surrounding the patch element; The RF signal of the chip passes through the RF wiring and the patch element, and is converted into the waveguide structure through the waveguide cavity.

3. The chip package to waveguide conversion device according to claim 2, wherein: The connection structure is a ball grid array package BGA solder ball, or a connection structure formed by a surface metal material.

4. The chip package to waveguide conversion device according to claim 3, wherein: The waveguide structure is provided with an inner cavity, which is rectangular, elliptical, circular or ridge-shaped.

5. The chip package to waveguide conversion device according to claim 1 or 2, wherein: The RF routing is: substrate integrated waveguide SIW, or microstrip line, or strip line, or coplanar waveguide.

6. The chip package to waveguide conversion device according to claim 5, wherein: The RF routing line is a single-branch routing line or a multi-branch routing line; one end of each branch close to the patch element is provided with a conversion metallization through hole.

7. The chip package to waveguide conversion device according to claim 6, wherein: The RF routing is a single-branch routing; the single-branch routing is a single-branch routing in a half "Y" shape; The RF routing is a multi-branch routing; the multi-branch routing is a symmetrical fork-shaped three-branch routing.

8. The chip package to waveguide conversion device according to claim 1, 2, 6 or 7, wherein: A projection of the RF trace on the third metal layer at least partially overlaps with the patch element.

9. The chip package to waveguide conversion device according to claim 8, wherein: The overlapping length of the projection of the RF routing on the third metal layer and the patch element is long enough so that the capacitance formed between the RF routing and the patch element and the resonant circuit formed by the inductance introduced by the conversion metallized through hole constitute a broadband resonant structure.

10. The chip package to waveguide conversion device according to claim 9, wherein: The overlapping length is greater than or equal to one third of the length of the patch element.

11. The chip package to waveguide conversion device according to claim 1 or 2, wherein: The RF trace is symmetrically fed or asymmetrically fed.

12. The chip package to waveguide conversion device according to claim 1 or 2, wherein: The patch element includes a rectangular patch.

13. The chip package to waveguide conversion device according to claim 2, wherein: The connection structure includes a plurality of solder balls arranged in a circle around the patch element, and the plurality of solder balls constitute a waveguide cavity for the patch element to transmit signals; the inner circle formed by the plurality of solder balls includes at least one ridge protruding into the circle.

14. The chip package to waveguide conversion device according to claim 13, wherein: The inner ring is a rectangular inner ring in which the ridge is arranged.

15. The chip package to waveguide conversion device according to claim 14, wherein: There is one ridge; the ridge is located in the middle of one side of the rectangular inner circle, or the ridge is located in a corner of the rectangular inner circle.

16. The chip package to waveguide conversion device according to claim 14, wherein: The ridges include two ridges; the two ridges are respectively located at the middle of two opposite sides of the rectangular inner circle, or the two ridges are respectively arranged at two opposite corners of the rectangular inner circle.

17. A radio frequency device, comprising: A package with an IC bare chip, and a PCB board; wherein the package further comprises a chip package to waveguide conversion device according to any one of claims 1 to 16; and a waveguide structure is provided on the PCB board; The RF signal from the IC die is converted into the waveguide structure through the patch element in the conversion device.

18. The radio frequency device according to claim 17, wherein: A waveguide hole is also provided on the PCB board at a position corresponding to the patch element in the conversion device, and the IC bare chip transmits signals to the waveguide hole through the RF wiring and patch element in the conversion device.

19. The radio frequency device according to claim 18, wherein: The cross-sectional shape of the waveguide hole is the same as the inner circle shape of the multiple solder balls surrounding the patch element; the package body is mounted on the PCB board, and the multiple solder balls are arranged in a circle around the boundary of the waveguide hole.

20. A radar device comprising: The radio frequency device according to any one of claims 17 to 19; The antenna structure is electrically connected to the radio frequency device.

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