Semiconductor heat treatment device, and temperature control method therefor

Abstract

A semiconductor heat treatment device, and a temperature control method therefor. The device comprises a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller, wherein the coil surrounds the chamber and provides a thermal field for the chamber, and the chamber is provided with a first temperature measurement hole and a second temperature measurement hole which are distributed in the central area of the chamber; the first temperature sensor is used for measuring the temperature of the chamber via the first temperature measurement hole and recording the temperature as a first temperature; the second temperature sensor is used for measuring the temperature of the chamber via the second temperature measurement hole and recording the temperature as a second temperature; and the temperature controller is used for acquiring the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, the temperature controller determines, on the basis of the first temperature and / or the second temperature, whether the central position of the coil deviates from the central point of the chamber, and if the central position of the coil deviates from the central point of the chamber, the temperature controller controls, on the basis of the first temperature and / or the second temperature, the coil to translate along a central axis until the central position of the coil reaches the central point of the chamber. The semiconductor heat treatment device can ensure the uniformity of the temperature of a wafer.

Description

Semiconductor heat treatment equipment and temperature control method thereof Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor heat treatment device and a temperature control method thereof. Background Art

[0002] Epitaxial growth refers to the growth of a specific epitaxial film on a wafer through an epitaxial process. The wafer and epitaxial film are collectively called an epitaxial wafer. Currently, chemical vapor deposition (CVD) is the main method used to grow epitaxial layers of silicon carbide. The specific chemical reaction is that SiH4 and C3H8 (C2H4) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) and reduced pressure (around 100mbar) to produce Si atoms and C atoms, which then recombine on the wafer surface to form SiC. Thermochemical distillation is widely used in the growth of epitaxial layers. Temperature is an important influencing factor, which has a significant impact on its doping uniformity and film thickness uniformity. If the temperature deviates from the set process temperature, it will have a significant negative impact on the process parameters.

[0003] However, related semiconductor equipment cannot ensure that the wafer is at the highest temperature in the chamber during process engineering, and thus cannot ensure the uniformity of the wafer temperature.

[0004] Summary of the Invention

[0005] In view of this, the purpose of this application is to provide a semiconductor heat treatment equipment and its temperature control method, which can ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the uniformity of the temperature of the wafer area.

[0006] In order to achieve the above objectives, the technical solutions adopted in the embodiments of the present application are as follows:

[0007] In a first aspect, an embodiment of the present application provides a semiconductor heat treatment device, comprising: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller; the chamber is used to place a wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, and a first temperature measuring hole and a second temperature measuring hole are provided on the chamber, and the first temperature measuring hole and the second temperature measuring hole are distributed in the central area of ​​the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it is judged based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber, and if so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0008] Furthermore, the temperature controller is also used to determine whether the first temperature is equal to the second temperature. If the first temperature is not equal to the second temperature, it is determined that the center position of the coil deviates from the center point of the chamber; based on the first temperature and the second temperature, the coil is controlled to translate along the central axis until the first temperature is equal to the second temperature, and it is determined that the center position of the coil reaches the center point of the chamber.

[0009] Furthermore, the chamber includes multiple areas, and the number of coil turns in each area is the same. The temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve is the chamber temperature corresponding to each area. The temperature controller is also used to obtain the area where the first temperature measuring hole on the chamber is located, recorded as a first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as a first target temperature; determine whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber;

[0010] and / or,

[0011] The temperature controller is also used to obtain the area where the second temperature measuring hole is located on the chamber, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; judge whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

[0012] Furthermore, the semiconductor heat treatment equipment further comprises: a driving member connected to the coil, and configured to drive the coil to translate;

[0013] The temperature controller is further configured to calculate a translation amount and a translation direction of the coil based on the first target temperature and the first temperature; and control the driving member to translate the coil based on the translation amount and the translation direction until a center point of the coil coincides with a center point of the chamber;

[0014] and / or,

[0015] The temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; and control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber.

[0016] Furthermore, the temperature controller is a programmable logic controller, and the programmable logic controller is communicatively connected to the first temperature sensor, the second temperature sensor and the induction power supply of the coil respectively.

[0017] In a second aspect, an embodiment of the present application provides a temperature control method for semiconductor heat treatment equipment, which is applied to the semiconductor heat treatment equipment described in the first aspect, and the temperature control method includes:

[0018] Acquire a first temperature detected by the first temperature sensor, and acquire a second temperature detected by the second temperature sensor;

[0019] When the temperature of the chamber reaches a steady state, determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature;

[0020] If yes, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0021] Furthermore, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes:

[0022] determining whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determining that the center position of the coil deviates from the center point of the chamber;

[0023] and / or,

[0024] The controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes:

[0025] When the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction where the second temperature measuring hole is located;

[0026] When the first temperature is lower than the second temperature, the coil is controlled to translate in the second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction where the first temperature measuring hole is located

[0027] Furthermore, the temperature control method further comprises:

[0028] calculating the skin depth of the chamber at a preset process temperature, obtaining an alternating current value of the coil, dividing the chamber into a plurality of regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the alternating current value; wherein the number of turns of the coil in each region is the same;

[0029] The ambient temperatures at both ends of the chamber when the temperature of the chamber reaches a steady state are obtained, and the chamber temperatures of the respective regions are calculated based on the ambient temperatures and the heat source intensity of the respective regions to obtain a temperature gradient distribution curve of the chamber.

[0030] Furthermore, the calculating of the chamber temperature of each of the regions based on the ambient temperature and the heat source intensity of each of the regions includes:

[0031] Starting from a first region at either end of the chamber, calculating a chamber temperature of the first region when the process reaches a steady state based on the heat source intensity of the first region and the ambient temperature;

[0032] Using the chamber temperature of the first area as the ambient temperature of a next adjacent area, and calculating the chamber temperature of the next area when the process reaches a steady state based on the ambient temperature of the next area and the heat source intensity of the next area, until the chamber temperature of the area where the center point of the chamber is located is calculated;

[0033] The chamber temperatures of the regions from the region where the center point of the chamber is located to the other end of the chamber are obtained based on the symmetry of the chamber temperatures from the first region to the region where the center point is located.

[0034] Furthermore, the calculation formula of the chamber temperature is:

[0035] Among them, T i1is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the i-th region, V i is the volume of the ith region.

[0036] Furthermore, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes:

[0037] Obtaining an area on the chamber where the first temperature measuring hole is located, recorded as a first setting area; determining a chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as a first target temperature; determining whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determining that the center position of the coil deviates from the center point of the chamber;

[0038] and / or,

[0039] Obtain the area where the second temperature measuring hole is located on the chamber, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; judge whether the second temperature is equal to the second target temperature; if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

[0040] Furthermore, the semiconductor heat treatment equipment further includes a driving member connected to the coil, and configured to drive the coil to translate; controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes:

[0041] calculating a translation amount and a translation direction of the coil based on the first target temperature and the first temperature; controlling the driving member to rotate based on the translation amount and the translation direction to drive the coil to translate until a center position of the coil coincides with a center point of the chamber;

[0042] and / or,

[0043] The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the driving member is controlled to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0044] An embodiment of the present application provides a semiconductor heat treatment device and a temperature control method thereof, wherein the semiconductor heat treatment device includes: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller; the chamber is used to place a wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, a first temperature measuring hole and a second temperature measuring hole are provided on the chamber, and the first temperature measuring hole and the second temperature measuring hole are distributed in the central area of ​​the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it is judged based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber, and if so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. The present application sets two temperature sensors on the chamber, and when the temperature of the chamber reaches a steady state, determines whether the center position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor. It can be determined whether the center point of the wafer is at the highest temperature point. When the wafer deviates from the center position of the coil, the center position of the coil is moved so that the center position of the coil reaches the center point of the chamber to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of the wafer temperature.

[0045] Other features and advantages of the embodiments of the present application will be described in the subsequent description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned technologies of the embodiments of the present application.

[0046] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0048] FIG1 shows a schematic diagram of the chamber structure of a related semiconductor heat treatment device;

[0049] FIG2a shows a front view of a chamber structure provided by an embodiment of the present application;

[0050] FIG2 b shows a side view of a chamber structure provided by an embodiment of the present application;

[0051] FIG3 shows a temperature distribution curve diagram of each area of ​​a chamber provided by an embodiment of the present application;

[0052] FIG4 shows a flow chart of a temperature control method for semiconductor heat treatment equipment provided by an embodiment of the present application;

[0053] FIG5 is a schematic diagram showing the distribution of heat source intensity in various areas of a chamber provided in an embodiment of the present application. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the present application will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments.

[0055] Related wafer heating technologies typically use induction heating as the primary method for heating silicon carbide epitaxy. This method offers advantages such as rapid heating, high heating efficiency, quick startup, and energy savings, making it widely used in the semiconductor industry. During the silicon carbide epitaxy process, strict requirements must be met for temperature uniformity and accuracy near the substrate. The coil, as the medium for generating the magnetic field, directly influences the temperature distribution during the heating process.

[0056] Alternating current is passed through the coil to generate a corresponding magnetic field and magnetic flux. The chamber placed inside the coil (such as a graphite piece with a hollow barrel-shaped structure) generates an induced electromotive force, which causes eddy currents to flow through the chamber, and a wafer position is reserved at the center of the chamber. The reaction gas flows horizontally through the chamber from one end of the coil and is pumped away from the other end, resulting in a lower ambient temperature in the chamber near the edge area in the horizontal direction. When the chamber is in a low-pressure vacuum state, according to the principle of thermal radiation, the temperature on both sides of the coil is lower. When the wafer is at the center of the coil, the highest point in the temperature field coincides with the center of the wafer. However, since the chamber inside the coil is installed inside the coil in an incompletely fixed form, if it is manually installed and lacks reliable fixation, the wafer will deviate from the center of the coil. Therefore, in the process engineering of related semiconductor equipment, it is impossible to ensure that the wafer is at the highest temperature in the chamber, and thus the uniformity of the wafer temperature cannot be guaranteed.

[0057] Refer to the chamber structure diagram of the relevant semiconductor heat treatment equipment shown in Figure 1. The chamber is a graphite part. The graphite part chamber is a hollow cylindrical structure. It is spliced ​​together by two semicircular parts to form a complete cylindrical shape. A wafer placement position is reserved in the middle of the center line of the graphite part. Since the current parallel air intake silicon carbide epitaxial equipment cannot directly measure the wafer temperature, the infrared thermometer indirectly measures the chamber temperature through the temperature measuring hole in Figure 1. The temperature measuring hole is usually located directly above the wafer placement position, as shown in Figure 1. The outside of the graphite part is a coil with a fixed number of coil turns and spacing. An alternating current is passed through the coil to generate a corresponding magnetic field and magnetic flux. The graphite part placed in the coil generates an induced electromotive force, which causes eddy currents to flow through the graphite part. When current flows through the graphite part, an opposite force is generated due to resistance, causing energy to pass through the graphite part in the form of heat, thereby heating the graphite part and the wafer inside it. The relevant semiconductor heat treatment equipment technology also has the following shortcomings:

[0058] Disadvantage 1: Because the reaction gas flows horizontally through the graphite component from the right side of the coil in Figure 1 and is pumped away from the left side of the coil, the ambient temperature on both sides of the graphite component is lower. When the chamber is in a low-pressure vacuum state, the temperature on both sides of the coil is lower due to the principle of thermal radiation. The reaction gas flow rate, chamber pressure, and pump force all affect the temperature uniformity at the center of the graphite component. Because the position of the coil cannot be adjusted, the turn spacing and number of turns are fixed, the temperature at the center of the graphite component can only be adjusted by adjusting the AC current passing through the coil, which consumes electricity and increases the temperature control time.

[0059] Disadvantage 2: Because the graphite piece inside the coil is not completely fixed, the lack of reliable fixation will cause the center point of the graphite piece to deviate from the center of the coil. When the coil position cannot be adjusted, the temperature uniformity at the center of the graphite piece is affected.

[0060] Disadvantage 3: Parallel air intake silicon carbide epitaxial equipment cannot directly measure the wafer temperature. It uses the temperature of the graphite part directly above the wafer to indirectly detect the temperature of the wafer. The temperature of the graphite part will change with the change of the temperature field, and the use of a single temperature measuring hole to measure the temperature of the graphite part cannot guarantee the reliability of the temperature measurement.

[0061] In order to solve one of the above problems, this embodiment provides a semiconductor heat treatment device, including: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller;

[0062] The above-mentioned chamber is used to place the wafer to be processed. The coil is arranged around the chamber and provides a thermal field for the chamber. Referring to the front view of the chamber structure shown in Figure 2a and the side view of the chamber structure shown in Figure 2b, the chamber is provided with a first temperature measuring hole 21 and a second temperature measuring hole 22, and the first temperature measuring hole 21 and the second temperature measuring hole 22 are distributed in the central area of ​​the chamber; the position of the wafer to be processed 20 is set at a position so that the center point of the wafer to be processed 20 coincides with the center point of the chamber, that is, the center point of the chamber and the center point of the wafer are the same point.

[0063] The first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole 21, which is recorded as the first temperature;

[0064] The second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole 22, which is recorded as the second temperature;

[0065] The temperature controller is configured to obtain a first temperature and a second temperature. When the temperature of the chamber reaches a steady state, the controller determines whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature. If so, the controller controls the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. It is readily understood that the central axis of the coil coincides with the central axis of the chamber.

[0066] After the process starts, current is passed through the coil to heat the chamber at constant power. After a certain period of heating (such as 30 minutes), the temperature of the chamber reaches the required process temperature. It is determined whether the fluctuation amplitude of the chamber temperature within the preset time is less than the set amplitude. If so, it is determined that the temperature of the chamber has reached a steady state. In a specific embodiment, the temperature of the chamber can be detected in real time based on the first temperature sensor and / or the second temperature sensor. When the temperature of the chamber reaches the set process temperature and the fluctuation amplitude within 1 minute is less than 0.2°C, it is determined that the temperature of the chamber has reached a steady state. The temperature of the chamber (i.e., the inner wall temperature of the chamber) is monitored based on the first temperature sensor and the second temperature sensor.

[0067] The inventors have discovered that when the chamber temperature reaches a steady state, the highest temperature is at the center of the coil or distributed in the central area of ​​the chamber. The central area is centered on the center of the chamber and has an edge a certain distance (e.g., 5 mm) from the center. The temperature within this central area can be considered the highest temperature point. In other words, the difference between the temperature in the central area and the actual highest temperature point is within the allowable deviation range. When the first temperature sensor and the second temperature sensor are distributed in the central area of ​​the chamber, if the center of the chamber coincides with the center of the coil, that is, the center of the wafer coincides with the center of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal, or the difference between the two is within the allowable deviation range.

[0068] In one embodiment, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal or the difference between the two is within the allowable deviation range, it can be determined whether the center position of the coil deviates from the center point of the chamber or the distance from the center point exceeds the allowable deviation range, and then it can be determined whether the center point of the wafer deviates from the center position of the coil.

[0069] In some embodiments, the first temperature measuring hole 21 and the second temperature measuring hole 22 are distributed on both sides of the center of the chamber. In a preferred embodiment, the first temperature measuring hole 21 and the second temperature measuring hole 22 are symmetrically distributed relative to the center of the chamber, so that the first temperature sensor and the second temperature sensor are equidistantly distributed in the center area of ​​the wafer and are centrally symmetrical. If the center point of the chamber coincides with the center point of the coil, that is, the center point of the wafer coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal. By judging whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, it can be judged whether the center position of the coil deviates from the center point of the chamber, and then it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0070] It should be noted that in this embodiment, there is only one first temperature measuring hole 21 and one second temperature measuring hole 22. However, the embodiments of the present application are not limited to this. In actual applications, there can be multiple first temperature measuring holes 21 and second temperature measuring holes 22, and they can be arranged in pairs, with each pair of first temperature measuring holes 21 and second temperature measuring holes 22 distributed in the central area of ​​the chamber. On this basis, the first temperature sensor and the second temperature sensor are arranged in pairs, and each pair of first temperature sensor and second temperature sensor has a one-to-one correspondence with each pair of first temperature measuring holes 21 and second temperature measuring holes 22.

[0071] In another embodiment, a chamber temperature distribution curve graph can be obtained when the temperature of the chamber reaches a steady state. By judging whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve graph (for example, whether the first temperature or the second temperature is equal to the temperature corresponding to the chamber temperature distribution curve graph), it can be judged whether the center position of the coil deviates from the center point of the chamber or the distance from the center point exceeds the allowable deviation range, and then it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0072] The semiconductor heat treatment equipment provided in this embodiment sets two temperature measuring holes on the chamber, and when the temperature of the chamber reaches a steady state, it is judged whether the center position of the coil deviates from the center point of the chamber or the distance deviating from the center point exceeds the allowable deviation range based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor. It can be judged whether the center point of the wafer is located at the highest temperature point, and the coil is moved so that the center position of the coil reaches the center point of the chamber when the wafer deviates from the center position of the coil, so as to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of the wafer temperature.

[0073] In one embodiment, the temperature controller provided in this embodiment is also used to determine whether the first temperature is equal to the second temperature, or the difference between the two is within the allowable deviation range. If the first temperature is not equal to the second temperature, or the difference between the two exceeds the allowable deviation range, the center position of the coil is determined to deviate from the center point of the chamber; based on the first temperature and the second temperature, the coil is controlled to translate along the central axis until the first temperature is equal to the second temperature, or the difference between the two is within the allowable deviation range, and the center position of the coil is determined to reach the center point of the chamber.

[0074] When the temperature values ​​detected by the first temperature sensor and the second temperature sensor are not equal, or the difference between the two exceeds the allowable deviation range, it indicates that the center point of the chamber does not coincide with the center point of the coil, that is, the center point of the wafer deviates from the center position of the coil or the distance from the center position exceeds the allowable deviation range. The coil is controlled to translate along the center axis (that is, the coil on the outer side of the chamber is translated along the center axis of the chamber, and the distance between the coil and the outer wall of the chamber remains unchanged during the translation process, for example, the center axis of the coil is kept coincident with the center axis of the chamber) to translate the center position of the coil until the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal, or the difference between the two is within the allowable deviation range, and it is determined that the center position of the coil reaches the center point of the chamber, that is, the center position of the coil reaches the center point of the wafer, and the wafer reaches the highest temperature point.

[0075] In another embodiment, the chamber provided in this embodiment includes multiple regions, and the number of coil turns in each region is the same. The temperature controller stores a temperature gradient distribution curve when the chamber temperature reaches a steady state, and the temperature gradient distribution curve represents the chamber temperature corresponding to each region. The coil is evenly divided into multiple regions based on the number of turns of the coil outside the chamber. For example, the chamber inside a coil with a total number of turns of 10 can be divided into 10 regions, each with 1 coil turn. Referring to the chamber temperature distribution curve for each region of the chamber shown in FIG3 , the horizontal axis of the graph in FIG3 represents the region number, and the vertical axis represents the chamber temperature (in K). As can be seen from FIG3 , after the chamber reaches a steady state, the chamber temperature exhibits an axisymmetric nonlinear distribution, with the highest temperature point being at the center of the coil, i.e., the center of the chamber and the wafer. Therefore, when the two temperature measuring points are distributed in the central area of ​​the chamber, preferably equidistantly distributed in the central area of ​​the chamber and centrally symmetrical, if the center point of the coil coincides with the center point of the chamber, the temperatures measured by the two temperature measuring points are equal, or the difference between the two is within the allowable deviation range, the position of the coil can be adjusted according to the temperature difference between the two temperature measuring points, so that the highest temperature point of the temperature field can be made to coincide with the center of the wafer.

[0076] In some embodiments, the temperature controller is also used to obtain the area where the first temperature measuring hole on the chamber is located, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; judge whether the first temperature is equal to the first target temperature, or the difference between the two is within the allowable deviation range. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, determine that the center position of the coil deviates from the center point of the chamber; the above-mentioned first target temperature is the temperature that the first temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0077] In some embodiments, the temperature controller is further configured to obtain an area on the chamber where a second temperature measuring hole is located, recorded as a second setting area; determine a chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as a second target temperature; and determine whether the second temperature is equal to the second target temperature, or whether the difference between the second temperature and the second target temperature is within an allowable deviation range. If the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, determine that the center position of the coil deviates from the center point of the chamber. The second target temperature is the temperature that the second temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0078] It should be noted that the temperature controller can obtain a first setting area and determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, the center position of the coil is determined to have deviated from the center point of the chamber. It can also obtain a second setting area and determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve. If the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, the center position of the coil is determined to have deviated from the center point of the chamber. It can also obtain the first setting area and the second setting area and determine the chamber temperatures corresponding to the two in the temperature gradient distribution curve. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, and / or the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, the center position of the coil is determined to have deviated from the center point of the chamber. If the first temperature is equal to the first target temperature or the difference between the two is within the allowable deviation range, and the second temperature is equal to the second target temperature or the difference between the two is within the allowable deviation range, it indicates that the center point of the chamber coincides with the center point of the coil and the coil position has not shifted.

[0079] Taking the chamber temperature distribution curve shown in Figure 3 as an example, assuming that the first setting area of ​​the first temperature measuring hole is area 8 and the second setting area of ​​the second temperature measuring hole is area 2, the chamber temperature distribution curve shows that when the chamber center point coincides with the coil center point, the first setting area 8 of the first temperature measuring hole corresponds to a first target temperature of 1550°C in the temperature gradient distribution curve, and the second setting area 2 of the second temperature measuring hole corresponds to a second target temperature of 1550°C in the temperature gradient distribution curve. Therefore, when the chamber temperature reaches a steady state, it is determined whether the first temperature detected by the first temperature sensor is equal to the first target temperature. If the first temperature and the first target temperature are not equal, it indicates that the coil position has deviated and the chamber center and the coil center do not coincide. It is also determined whether the second temperature detected by the second temperature sensor is equal to the second target temperature. If the second temperature and the second target temperature are not equal, it indicates that the coil position has deviated and the chamber center and the coil center do not coincide. If the first temperature detected by the first temperature sensor is equal to the second temperature detected by the second temperature sensor and both are equal to 1550° C., it indicates that the center point of the chamber coincides with the center point of the coil and the coil position is not offset.

[0080] In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes: a driving member connected to the coil, and the driving member is used to drive the coil to move in translation; the driving member includes, for example, a motor.

[0081] In one embodiment, the temperature controller is also used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; and control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber.

[0082] When the first temperature actually detected by the first temperature sensor is greater than the first target temperature, it indicates that the center point of the coil is close to the first temperature measuring hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the second temperature measuring hole (that is, the direction in which the center point of the chamber points to the second temperature measuring hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger the difference, the greater the translation amount; conversely, if the first temperature is lower than the first chamber temperature, it indicates that the center point of the coil is close to the second temperature measuring hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the first temperature measuring hole (that is, the direction in which the center point of the chamber points to the first temperature measuring hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The greater the difference between the first chamber temperature and the first temperature, the greater the translation amount.

[0083] For example, taking the chamber temperature distribution curve shown in Figure 3 as an example, assuming that the first temperature measuring hole is set in area 8, when the center point of the chamber coincides with the center point of the coil, as shown in Figure 3, the first target temperature that the first temperature sensor should detect is 1550°C. If when the chamber temperature reaches a steady state, the first temperature detected by the first temperature sensor is 1600°C, indicating that the curve in Figure 3 has shifted one area toward the first temperature measuring hole (the direction in which area 2 points to area 8), that is, the chamber has shifted one area toward the second temperature measuring hole, the distance between the center of the coil and the first temperature measuring hole is closer, and the control coil is shifted one area length (such as 30 mm) toward the second temperature measuring hole (the direction in which area 8 points to area 2) to restore the first temperature and the second temperature to 1550°C.

[0084] In some embodiments, for example, the drive element includes a rotary motor and a transmission structure. By controlling the forward and reverse rotation of the rotary motor, the transmission structure converts the power provided by the rotary motor into linear power, which is then transmitted to the coil to control the translational direction of the coil. Of course, in practical applications, the drive element may also include a linear motor, etc.

[0085] In another embodiment, the temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; and control the rotation of the motor based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

[0086] When the second temperature actually detected by the second temperature sensor is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole and farther from the first temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being higher than the second target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the first temperature measuring hole, and the translation amount is related to (the difference between the second temperature and the second chamber temperature). The greater the difference between the second temperature and the second chamber temperature, the greater the translation amount; conversely, if the second temperature is lower than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole and farther from the second temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being lower than the second target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the second temperature measuring hole, and the translation amount is related to (the difference between the second chamber temperature and the second temperature). The greater the difference between the second chamber temperature and the second temperature, the greater the translation amount.

[0087] For example, taking the chamber temperature distribution curve shown in Figure 3 as an example, assuming that the second temperature measuring hole is set in area 2, when the center of the chamber coincides with the center of the coil, as shown in Figure 3, the second target temperature that the second temperature sensor should detect is 1550°C. If the second temperature detected by the second temperature sensor is 1500°C when the chamber temperature reaches a steady state, it indicates that the curve in Figure 3 has shifted one area toward the first temperature measuring hole (that is, the direction from area 2 to area 8), that is, the chamber has shifted one area toward the second temperature measuring hole, the distance between the center of the coil and the first temperature measuring hole is closer, and the distance between the center of the coil and the second temperature measuring hole is farther. The control coil is shifted one area length (such as 30 mm) toward the second temperature measuring hole (that is, the direction from area 8 to area 2) to restore the first temperature and the second temperature to 1550°C.

[0088] In one embodiment, the temperature controller provided in this embodiment is a programmable logic controller, which is respectively communicated with the first temperature sensor, the second temperature sensor and the induction power supply of the coil, so that the first temperature detected by the first temperature sensor, the second temperature detected by the second temperature sensor, and the AC current I and the current frequency f passing through the coil can be obtained.

[0089] The semiconductor heat treatment equipment provided in this embodiment can adjust the translation coil according to the temperature distribution curve in the chamber and the temperature detected by the two temperature sensors, ensuring that the highest temperature point at the center of the coil coincides with the center of the wafer, thereby ensuring temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, which improves the temperature adjustment efficiency; and the use of two temperature sensors to detect the temperature in the chamber can make temperature measurement more effective and reliable, and the positions of the two temperature measuring holes can be used as judgment conditions for coil position adjustment, which can ensure temperature uniformity in the wafer area.

[0090] Corresponding to the semiconductor heat treatment equipment provided in the above embodiment, this embodiment provides a temperature control method for semiconductor heat treatment equipment, which is applied to the semiconductor heat treatment equipment provided in the above embodiment. Referring to the flow chart of the temperature control method for semiconductor heat treatment equipment shown in FIG4 , the method mainly includes the following steps:

[0091] Step S402, obtaining a first temperature detected by a first temperature sensor and obtaining a second temperature detected by a second temperature sensor;

[0092] The temperature controller is communicatively connected to the first temperature sensor and the second temperature sensor respectively, and acquires a first temperature detected by the first temperature sensor and a second temperature detected by the second temperature sensor in real time.

[0093] Step S404 , when the temperature of the chamber reaches a steady state, determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature;

[0094] After the process starts, current is passed through the coil to heat the chamber at constant power. After a certain heating period (such as 30 minutes), the temperature of the chamber reaches the required process temperature. It is determined whether the fluctuation amplitude of the chamber temperature within the preset time period is less than the set amplitude. If so, it is determined that the chamber temperature has reached a steady state.

[0095] When the temperature of the chamber reaches a steady state, when the center point of the chamber coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal. In one embodiment, by judging whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal or the difference between the two is within the allowable deviation range, it can be judged whether the center position of the coil deviates from the center point of the chamber, and then it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0096] In another embodiment, by judging whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve (for example, whether the first temperature or the second temperature is equal to the corresponding temperature in the chamber temperature distribution curve), it can be judged whether the center position of the coil deviates from the center point of the chamber, and then it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0097] Step S406: If yes, control the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0098] In one embodiment, the coil is controlled to translate along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature or the difference between the two is within the allowable deviation range, and the center position of the coil is determined to reach the center point of the chamber; in another embodiment, a chamber temperature distribution curve diagram can be obtained when the temperature of the chamber reaches a steady state, and the coil is controlled to translate along the central axis based on the first temperature or the second temperature. When the first temperature or the second temperature is equal to the corresponding temperature in the chamber temperature distribution curve diagram, it is determined that the center position of the coil has reached the center point of the chamber.

[0099] The temperature control method for the semiconductor heat treatment equipment provided in this embodiment is to set two temperature measuring holes on the chamber, and when the temperature of the chamber reaches a steady state, judge whether the center position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, so as to judge whether the center point of the wafer is at the highest temperature point. When the wafer deviates from the center position of the coil, the center position of the coil is moved so that the center position of the coil reaches the center point of the chamber, so as to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of the wafer temperature.

[0100] In one embodiment, this embodiment provides a specific implementation method for determining whether the center position of the wafer coil deviates from the center point of the chamber based on the first temperature and the second temperature: determining whether the first temperature is equal to the second temperature or the difference between the two is within the allowable deviation range; if the first temperature is not equal to the second temperature or the difference between the two exceeds the allowable deviation range, determining that the center position of the coil deviates from the center point of the chamber.

[0101] In one embodiment, this embodiment provides an implementation method for controlling the coil to translate along the central axis based on the first temperature and the second temperature until the center position of the coil reaches the center point of the chamber. Specifically, the implementation can refer to the following steps:

[0102] Step (1): When the first temperature is greater than the second temperature, the control coil is translated in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction in which the second temperature measuring hole is located.

[0103] If the first temperature is greater than the second temperature, it indicates that the temperature detected by the first temperature sensor is higher, the center point of the coil is biased toward the direction of the first temperature measuring hole, and the control coil is translated toward the direction of the second temperature measuring hole (that is, the direction in which the area where the first temperature measuring hole is located points to the area where the second temperature measuring hole is located) so that the first temperature is equal to the second temperature.

[0104] Taking the chamber shown in Figure 2b as an example, when the first temperature is greater than the second temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole 21, and the center point of the coil is on the right side of the center point of the chamber. The control coil is translated toward the direction of the second temperature measuring hole, that is, the control coil is translated to the left until the first temperature is equal to the second temperature and the center point of the wafer coincides with the center point of the coil.

[0105] Step (2): When the first temperature is lower than the second temperature, the control coil is translated in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction in which the first temperature measuring hole is located.

[0106] If the first temperature is lower than the second temperature, it indicates that the temperature detected by the second temperature sensor is higher and the center point of the coil is closer to the second temperature measuring hole. The control coil is translated toward the direction of the first temperature measuring hole to make the first temperature equal to the second temperature.

[0107] Taking the chamber shown in Figure 2b as an example, when the first temperature is lower than the second temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole 22, and the center point of the coil is on the left side of the center point of the chamber. The control coil is translated toward the direction of the first temperature measuring hole 21, that is, the control coil is translated to the right, until the first temperature is equal to the second temperature, and the center point of the wafer coincides with the center point of the coil.

[0108] In one embodiment, in order to prove that the highest temperature point is at the center of the coil, the method provided in this embodiment further includes the following steps:

[0109] Step 1): Calculating the skin depth of the chamber at a preset process temperature, obtaining the AC current value of the coil, dividing the chamber into multiple regions based on the number of coil turns, and calculating the heat source intensity of each region in the chamber based on the skin depth and the AC current value; wherein the number of coil turns in each region is the same;

[0110] The temperature field of the coil is analyzed to determine the highest temperature position in the chamber. First, the magnetic field strength of the chamber is analyzed. The calculation formula of the magnetic field strength acting on the chamber is:

[0111] Where n is the number of turns of the coil and Z0 is the coil length. The eddy current density acting on the inner surface of the chamber is:

[0112] Among them, δ m0 is the eddy current density on the chamber surface, Δ is the skin depth, H m0 is the magnetic field strength,

[0113] r is the radius of the measured point, and r0 is the cylindrical radius of the chamber.

[0114] The formula for calculating skin depth is:

[0115] Where ω is the angular frequency (ω = 2πf (rad / s), frequency f = 4900 Hz), μ is the magnetic permeability (μ = 4π*10 7 ), γ is the conductivity (such as 83333 S / m).

[0116] As the radius changes, the calculation formula for the eddy current density of the measured point is:

[0117] When considering the small area ds on the radius r, the calculation formula of the eddy current passing through the small area is: dI r =δ mr *dS (Formula 5)

[0118] The calculation formula for the power generated by eddy current is:

[0119] Here, dR is the effective resistance of the material for eddy currents passing through a small area, and J is a conversion parameter (J=4.18 cal / W).

[0120] Based on the above formulas 5 and 6, the heat source intensity can be calculated. The chamber is evenly divided into multiple areas based on the number of coil turns. The number of coil turns in each area is the same. For example, when the number of coil turns is 30, if the chamber is divided into 10 areas, the number of coil turns in each area is 3; when the number of coil turns is 10, if the chamber is divided into 10 areas, the number of coil turns in each area is n. i =1, the coil length Z of each area i =30mm, then the calculation formula for the heat source intensity of the i-th area of ​​the chamber is:

[0121] Where ρ is the resistivity of the chamber material, I is the AC current flowing through the coil, and F i is the heat source intensity of the ith region.

[0122] Since the number of coil turns in each area is the same and the coil length is constant, it can be concluded through simulation calculation that the heat source intensity in each area is equal. Assuming that the chamber thickness is 15mm and the measured point r = 0.085m, referring to the heat source intensity distribution diagram of each area in the chamber as shown in Figure 5, it can be calculated that F1 = F2 = F3 = ... = F10 = 3.9511*10 4 W / m 3 , that is, the heat source intensity in each area of ​​the chamber is the same.

[0123] Step 3): Obtain the ambient temperature at both ends of the chamber when the temperature of the chamber reaches a steady state, calculate the chamber temperature of each area based on the ambient temperature and the heat source intensity of each area, and obtain the temperature gradient distribution curve of the chamber.

[0124] Calculate the heat of each area based on the heat source intensity of each area: Q i =F*V i *t (Formula 8)

[0125] Among them, Q i is the heat of the ith region, V i is the volume of the ith region, and t is the heating time.

[0126] In the absence of any external interference, the heat source intensity inside the chamber is stable, and the energy inside the chamber is uniform. The effect of ambient temperature on the internal temperature field of the chamber needs to be considered. The influence of the chamber environment on the chamber can be simulated using the following formula 9 to calculate heat loss. When the ambient temperature and the internal temperature of the chamber are in equilibrium, the temperatures before and after the chamber are stable, and the heat generated by the chamber is equal to the heat absorbed by the chamber before and after.

[0127] Wherein, Q is the change in chamber ambient heat caused by thermal radiation, σ is the Stokes constant, is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T2 is the ambient temperature, and T1 is the chamber temperature after reaching steady state (i.e., the inner surface temperature of the chamber).

[0128] Assuming the heating time t = 1s, the calculation formula for the chamber temperature is:

[0129] In a specific implementation, this embodiment provides an implementation for calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region. The implementation can be performed by referring to the following steps:

[0130] Step 1, starting from the first zone at either end of the chamber, calculate the chamber temperature of the first zone when the process reaches a steady state based on the heat source intensity and ambient temperature of the first zone;

[0131] Starting from the first area at one end of the chamber, taking the chamber in FIG2b as an example, when the number of coil turns is 10, the chamber can be divided into 10 areas. Starting from the first area at the leftmost end of the chamber in FIG2b, the calculation formula for the chamber temperature of the first area is:

[0132] Among them, T 11is the chamber temperature of the first region, F1 is the heat source intensity of the first region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T 12 is the ambient temperature corresponding to the first region (i.e., the ambient temperature at both ends of the chamber, which can be obtained based on actual detection by a thermometer), and V1 is the volume of the first region.

[0133] Step 2: The chamber temperature of the first zone is used as the ambient temperature of the next adjacent zone. The chamber temperature of the next zone is calculated based on the ambient temperature of the next zone and the heat source intensity of the next zone when the process reaches a steady state, until the chamber temperature of the zone where the center point of the chamber is located is calculated;

[0134] The chamber temperature of the first zone is taken as the ambient temperature of the next adjacent zone, that is, T 22 =T 11 , the calculation formula for the chamber temperature of the next area (i.e. the second area) is:

[0135] Among them, T 21 is the chamber temperature of the second region, F2 is the heat source intensity of the first region, T 22 is the ambient temperature corresponding to the second region (i.e., the chamber temperature of the first region is taken as the ambient temperature of the adjacent second region), and V2 is the volume of the second region.

[0136] The chamber temperature of the second area is used as the ambient temperature of the adjacent third area, and so on, and the chamber temperatures of each area from the first area to the area where the center point of the chamber is located are calculated in sequence.

[0137] Among them, T i1 is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the i-th region, V i is the volume of the i-th region.

[0138] Step 3: Based on the symmetry of the chamber temperatures from the first area at one end of the chamber to the area at the center point, the chamber temperatures of the areas from the area at the center point of the chamber to the other end of the chamber are obtained.

[0139] Due to the symmetry of the chamber temperature, a chamber temperature curve graph of the other half of the region can be obtained by comparing the chamber temperature curve graph from the first region to the region where the center point of the chamber is located.

[0140] When the chamber reaches a steady state, see the chamber temperature distribution curves for each chamber region in Figure 3. The horizontal axis of the graph represents the region number, and the vertical axis represents the chamber temperature (in K). As can be seen from Figure 3, the temperature model after the chamber reaches steady state is an axisymmetric nonlinear distribution, with the highest temperature point occurring at the center of the coil, which is also the center of the chamber and wafer. Therefore, when the two temperature measuring holes are equidistant and centrosymmetrically distributed around the chamber center, the temperatures measured by the two temperature sensors are equal when the coil center coincides with the chamber center.

[0141] In one embodiment, this embodiment provides two implementations for determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature:

[0142] In one embodiment, an area of ​​the chamber where a first temperature measuring hole is located is obtained, recorded as a first setting area; a chamber temperature corresponding to the first setting area in a temperature gradient distribution curve is determined, recorded as a first target temperature; and whether the first temperature is equal to the first target temperature is determined. If the first temperature is not equal to the first target temperature, it is determined that the center position of the coil deviates from the center point of the chamber.

[0143] The aforementioned temperature measuring holes are typically positioned unchanged in the chamber. The area where the first temperature measuring hole is located is determined, referred to as the first setting area. The chamber temperature corresponding to the first setting area in the temperature gradient distribution curve is determined. This is the temperature that the first temperature sensor should theoretically detect when the coil center coincides with the chamber center when the chamber temperature reaches a steady state. This temperature is referred to as the first target temperature. If the first temperature is equal to the first target temperature, the coil center position has not deviated from the chamber center, and the wafer is located at the highest temperature point.

[0144] In another embodiment, the area where the second temperature measuring hole on the chamber is located is obtained and recorded as the second setting area; the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve is determined and recorded as the second target temperature; it is judged whether the second temperature is equal to the second target temperature; if the second temperature is not equal to the second target temperature, it is determined that the center position of the coil deviates from the center point of the chamber.

[0145] Obtain the area where the second temperature measuring hole is located, recorded as the second setting area. Determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve. This is the temperature that the second temperature sensor should theoretically detect when the coil center coincides with the chamber center when the chamber temperature reaches a steady state. This is recorded as the second target temperature. If the second temperature is equal to the second target temperature, it is determined that the coil center position has not deviated from the chamber center and the wafer is located at the highest temperature point.

[0146] In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes a driving member connected to the coil, and the driving member is used to drive the coil to translate. This embodiment provides two implementation methods for controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. For details, please refer to the following implementation methods 1 and 2:

[0147] Implementation method one:

[0148] The translation amount and translation direction of the coil are calculated based on the first target temperature and the first temperature; and the driving member is controlled to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0149] When the first temperature actually detected by the first temperature sensor is greater than the first target temperature, it indicates that the center point of the coil is close to the first temperature measuring hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the second temperature measuring hole (i.e., the direction in which the center point of the chamber points to the second temperature measuring hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger the difference, the larger the translation amount. Conversely, if the first temperature is lower than the first chamber temperature, it indicates that the center point of the coil is close to the second temperature measuring hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the first temperature measuring hole (i.e., the direction in which the center point of the chamber points to the first temperature measuring hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The larger the difference, the larger the translation amount.

[0150] Implementation method 2:

[0151] The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the driving member is controlled to rotate based on the translation amount and the translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0152] When the second temperature actually detected by the second temperature sensor is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole and farther from the first temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being higher than the second target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the first temperature measuring hole, and the translation amount is related to (the difference between the second temperature and the second chamber temperature). The larger the difference, the greater the translation amount; conversely, if the second temperature is lower than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole and farther from the second temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being lower than the second target temperature that should be detected when the coil center is not deviated. The coil is controlled to translate toward the second temperature measuring hole, and the translation amount is related to (the difference between the second chamber temperature and the second temperature). The larger the difference, the greater the translation amount.

[0153] The temperature control method of the semiconductor heat treatment equipment provided in this embodiment can adjust the translation coil according to the temperature distribution curve in the chamber and the temperature detected by the two temperature sensors, ensuring that the highest temperature point at the center of the coil coincides with the center of the wafer, thereby ensuring temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, which improves the temperature adjustment efficiency; and the use of two temperature sensors to detect the temperature in the chamber can make temperature measurement more effective and reliable, and the positions of the two temperature measuring holes can be used as judgment conditions for coil position adjustment, which can ensure temperature uniformity of the wafer.

[0154] The method provided in this embodiment has the same implementation principle and technical effects as those in the aforementioned embodiment. For the sake of brief description, for matters not mentioned in the method embodiment, reference may be made to the corresponding contents in the aforementioned device embodiment.

[0155] An embodiment of the present application provides a computer-readable medium, wherein the computer-readable medium stores computer-executable instructions. When the computer-executable instructions are called and executed by a processor, the computer-executable instructions prompt the processor to implement the method described in the above embodiment.

[0156] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working process of the system described above can refer to the corresponding process in the aforementioned embodiment and will not be repeated here.

[0157] The computer program product of the temperature control method for semiconductor heat treatment equipment provided in the embodiment of the present application includes a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the method described in the previous method embodiment. The specific implementation can be found in the method embodiment and will not be repeated here.

[0158] In addition, in the description of the embodiments of this application, unless otherwise specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0159] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0160] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of this application and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0161] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present application, which are used to illustrate the technical solutions of the present application, rather than to limit them. The scope of protection of the present application is not limited thereto. Although the present application has been described in detail with reference to the above-described embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-described embodiments within the technical scope disclosed in the present application, or perform equivalent replacements for some of the technical features thereof. Such modifications, changes, or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application shall be based on the scope of protection of the claims.

Claims

1. A semiconductor heat treatment device, characterized in that: include: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller; The chamber is used to place the wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, a first temperature measuring hole and a second temperature measuring hole are arranged on the chamber, and the first temperature measuring hole and the second temperature measuring hole are distributed in the central area of ​​the chamber; The first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; The second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; The temperature controller is used to obtain the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it is determined based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber. If so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

2. The semiconductor heat treatment equipment according to claim 1, characterized in that: The temperature controller is also used to determine whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determine that the center position of the coil deviates from the center point of the chamber; The coil is controlled to translate along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature, and it is determined that the center position of the coil reaches the center point of the chamber.

3. The semiconductor heat treatment equipment according to claim 1, characterized in that: The chamber includes a plurality of regions, and the number of coil turns in each of the regions is the same. The temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve is the chamber temperature corresponding to each of the regions; The temperature controller is further used to obtain the area where the first temperature measuring hole is located on the chamber, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; determine whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; and / or, The temperature controller is also used to obtain the area where the second temperature measuring hole on the chamber is located, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; judge whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

4. The semiconductor heat treatment equipment according to claim 3, characterized in that: Also includes: A driving member, the driving member is connected to the coil, and the driving member is used to drive the coil to translate; The temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; and to control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber; and / or, The temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; based on the translation amount and translation direction, the driving member is controlled to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

5. The semiconductor heat treatment equipment according to claim 1, characterized in that: The temperature controller is a programmable logic controller, and the programmable logic controller is respectively connected to the first temperature sensor, the second temperature sensor and the induction power supply of the coil for communication.

6. A temperature control method for semiconductor heat treatment equipment, characterized in that: Applied to the semiconductor heat treatment equipment according to any one of claims 1 to 5, the temperature control method comprises: Acquire a first temperature detected by the first temperature sensor, and acquire a second temperature detected by the second temperature sensor; When the temperature of the chamber reaches a steady state, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature; If yes, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

7. The method according to claim 6, characterized in that The determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: determining whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determining that the center position of the coil deviates from the center point of the chamber; and / or, The controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber comprises: When the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction where the second temperature measuring hole is located; When the first temperature is lower than the second temperature, the coil is controlled to translate in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction where the first temperature measuring hole is located.

8. The method according to claim 6, characterized in that Also includes: Calculate the skin depth of the chamber at a preset process temperature and obtain the AC current of the coil value, dividing the chamber into a plurality of regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the AC current value; wherein the number of turns of the coil in each region is the same; The ambient temperatures at both ends of the chamber when the temperature of the chamber reaches a steady state are obtained, and the chamber temperatures of each of the regions are calculated based on the ambient temperatures and the heat source intensity of each of the regions to obtain a temperature gradient distribution curve of the chamber.

9. The method according to claim 8, characterized in that The calculating the chamber temperature of each of the regions based on the ambient temperature and the heat source intensity of each of the regions comprises: Starting from a first area at any end of the chamber, calculating the chamber temperature of the first area when the process reaches a steady state based on the heat source intensity of the first area and the ambient temperature; The chamber temperature of the first area is used as the ambient temperature of the next adjacent area, and the chamber temperature of the next area is calculated when the process reaches a steady state based on the ambient temperature of the next area and the heat source intensity of the next area, until the chamber temperature of the area where the center point of the chamber is located is calculated; Based on the symmetry of the temperatures of each chamber from the first area to the area where the center point is located, the chamber temperatures of each area from the area where the center point of the chamber is located to the other end of the chamber are obtained.

10. The method according to claim 9, characterized in that The calculation formula of the chamber temperature is: Among them, T i1 is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the ith region, V i is the volume of the ith region.

11. The method according to claim 8, characterized in that The determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: Acquire the area where the first temperature measuring hole on the chamber is located, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; judge whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; and / or, Obtain an area on the chamber where the second temperature measuring hole is located, recorded as a second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as a second target temperature; determine whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

12. The method according to claim 11, characterized in that The semiconductor heat treatment equipment further includes a driving member, which is connected to the coil and is used to drive the coil to translate; controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber, includes: Calculating the translation amount and translation direction of the coil based on the first target temperature and the first temperature; controlling the driving member to drive the coil to translate based on the translation amount and translation direction until the center position of the coil coincides with the center point of the chamber; and / or, The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the driving member is controlled based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

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