Probe main body, electric-field probe, and detection system

Abstract

A probe main body, an electric-field probe, and a detection system. The probe main body (100) comprises a transmission portion (C), a detection line (121), and a detection end (A) and a connection end (B) which are respectively provided on two ends of the transmission portion (C), wherein the detection line (121) is provided inside the transmission portion (C); the detection end (A) is used for detecting an electric field of an object (W) to be detected, and the connection end (B) is used for connecting a detection device; an end face of the detection end (A) is provided with a first shielding layer (131), which first shielding layer (131) is provided with a detection through hole (T); the detection line (121) extends from the connection end (B) to the detection through hole (T) along the transmission portion (C), and the detection line (121) is insulated from the first shielding layer (131); and the detection line (121) is used for detecting at the detection end (A) the electric field of said object (W) by means of the detection through hole (T), and transmitting a detected detection signal to the connection end (B) by means of the transmission portion (C). The electric-field probe in the probe main body can accurately detect an electric field in a vertical direction, and the resolution for electric field detection is higher.

Description

Probe body, electric field probe and detection system

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on September 28, 2023, with application number 202311289884.2 and application name “A probe body, electric field probe and detection system”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the technical field of electric field detection, and in particular to a probe body, an electric field probe, and a detection system. Background Art

[0004] With the continuous advancement of power electronics technology, bus speeds are increasing, operating frequencies are rising, level switching is accelerating, and wiring density is increasing. These factors can cause electronic devices (such as chips) to generate some undesirable electromagnetic radiation. This electromagnetic radiation can be picked up by cables, traces, or package pins and coupled into other circuits or electronic systems, causing serious electromagnetic compatibility issues.

[0005] Electromagnetic near-field test probes are key tools for electromagnetic compatibility testing. They can capture electric and magnetic field radiation, enabling electromagnetic radiation analysis using spectrum analyzers, oscilloscopes, and other detection equipment. However, existing technologies using electric field probes have low resolution and poor near-field testing performance. While they can detect electric fields over large areas above the board level, they cannot meet the requirements for electric field detection at the chip or package level.

[0006] Summary of the Invention

[0007] The embodiments of the present application provide a probe body, an electric field probe, and a detection system to improve the resolution of electric field detection to meet the electric field detection requirements at the chip level or the package level.

[0008] In a first aspect, embodiments of the present application provide a probe body having a detection end and a connection end, the detection end being used to detect the electric field of an object to be measured, and the connection end being used to connect to a detection device. The probe body is connected to a connector via the connection end, and the probe body is used to electrically connect to the detection device via the connector. A fixing member is used to fix the probe body and the connector. Specifically, the fixing member may include a first fixing portion and a second fixing portion, the second fixing portion being used to fix the connection to the robotic arm, and the first fixing portion being used to fix the second fixing portion, the probe body, and the connector.

[0009] During specific implementation, the probe body can be controlled to move precisely by a robotic arm to place the probe body on the object to be measured. The probe body can detect the electric field of the object to be measured at the detection end, and transmit the detected detection signal to the detection device through the connector. The detection device can determine the electric field of the object to be measured based on the detection signal detected by the detection body, thereby realizing electric field detection of the object to be measured.

[0010] The probe body in the embodiment of the present application may include: a transmission part, a detection line, and a detection end and a connection end respectively arranged at both ends of the transmission part. The detection line is arranged inside the transmission part. The end face of the detection end is provided with a first shielding layer, and the first shielding layer is provided with a detection through-hole. The detection line extends from the connection end along the transmission part to the detection through-hole, and the detection line is insulated from the first shielding layer, and the detection line can leak out through the detection through-hole in the first shielding layer. The first shielding layer can play a role in shielding the electric field. In a specific implementation, the first shielding layer can be grounded. The detection line is used to detect the electric field of the object to be measured at the detection end through the detection through-hole, and transmit the detection signal obtained through the transmission part to the connection end.

[0011] During electric field detection, the probing tip of the probe body can be positioned perpendicular to the surface of the object being measured. The first shielding layer can shield the electric field in all directions except the vertical direction, so that only the electric field in the vertical direction can be detected by the probing wire, where the vertical direction refers to the direction perpendicular to the surface of the object being measured. The probing wire leaking from the probing hole can form a potential difference with the first shielding layer and couple with the vertical electric field, thereby detecting the vertical component of the electric field. The resulting detection signal can be approximately proportional to the vertical component of the electric field.

[0012] In the probe body provided in the embodiment of the present application, by providing a first shielding layer at the end of the detection end of the probe body, and the detection line leaking through the detection through hole in the first shielding layer, the electric field in the vertical direction can be accurately detected, interference from the electric field in other directions is eliminated, and the resolution of the electric field detection is improved. In addition, the electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process. The chip carrier board process can produce a trace with a smaller line width, and thus, a thinner detection line can be produced. For example, a detection line with a line width of approximately 15μm can be produced. The overall thickness of the probe body can be less than 0.7mm. For example, the entire thickness of the probe body can be in the range of 0.4mm to 0.7mm, thereby further improving the resolution of the electric field probe to a resolution of less than 0.1mm.

[0013] In one possible implementation, the end of the detection wire can be flush with the outer surface of the first shielding layer, and an insulating dielectric material can be filled between the detection wire and the inner wall of the detection through-hole to ensure that the detection wire and the first shielding layer are insulated. The detection wire and the first shielding layer can be made of metal materials such as copper, silver, and iron. Of course, the detection wire and the first shielding layer can also be made of other conductive materials, which are not limited here. The thickness of the detection wire can range from 15μm to 50μm.

[0014] In the embodiment of the present application, the probe body may be in the shape of a broken line, a straight line, or a curve. In specific implementation, the shape of the probe body may be set according to actual needs, which is not limited here.

[0015] In an embodiment of the present application, the probe body may further include: a second shielding layer and a third shielding layer, the second shielding layer and the third shielding layer respectively covering the two opposite outer side surfaces of the transmission part, and extending from the detection end along the transmission part to the connection end. In other words, the entire outer side surface of the probe body is completely wrapped by the second shielding layer and the third shielding layer, and the second shielding layer and the third shielding layer can play a shielding role, thereby preventing the detection signal transmitted in the detection line from being interfered with by external signals, and further improving the resolution of electric field detection. In a specific implementation, the second shielding layer and the third shielding layer can be grounded. In addition, the use of a shielding layer to wrap the outer side surface and end face of the probe body can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object to be measured.

[0016] In a possible implementation, the second shielding layer and the third shielding layer may be made of metal materials such as copper, silver, and iron. Of course, the second shielding layer and the third shielding layer may also be made of other conductive materials, which is not limited here.

[0017] In the embodiments of the present application, the transmission portion of the probe body may further include: a support layer, a first shielding portion, and a first conductive portion. The support layer may be used to support the detection line and the first conductive portion. The support layer may be made of an insulating dielectric material. The thickness of the support layer may be between 90 μm and 110 μm, for example, the thickness of the support layer may be approximately 100 μm. The support layer is rigid, thus being able to support the detection line and other film layers mentioned later. The detection line and the first conductive portion are located on the surface of one side of the support layer, and the first shielding portion is located on the side of the detection line and the first conductive portion facing away from the support layer. The first conductive portion may be located in the same film layer as the detection line. In the embodiments of the present application, the film layer containing the detection line and the first conductive portion is referred to as the first conductive film layer. The first conductive portion is electrically connected to the first shielding portion and is insulated from the detection line. The first shielding portion can provide a shielding function, preventing the detection signal transmitted in the detection line from being interfered with by external signals, and can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object to be measured. In specific implementations, the first shielding portion may be grounded. In a direction perpendicular to the surface of the supporting layer, the first shielding portion can cover the detection line, thereby providing a good shielding effect. Furthermore, electrically connecting the first conductive portion to the first shielding portion can enhance the shielding effect. In a specific implementation, the first shielding portion can be made of metal materials such as copper, silver, and iron. Of course, the first shielding portion can also be made of other conductive materials, which are not limited here. The thickness of the first shielding portion can be in the range of 12μm to 35μm.

[0018] In one possible implementation, the transmission portion of the probe body may further include: a first dielectric layer and at least one first conductive connection hole, the first dielectric layer being positioned between the first shielding portion and the first conductive film layer, the first conductive connection hole penetrating the first dielectric layer and the first shielding portion, and the first conductive portion being electrically connected to the first shielding portion via the first conductive connection hole. During the manufacturing process, a through hole may be first formed in the first dielectric layer and the first shielding portion, and then a conductive film may be formed on the inner wall of the through hole using a conductive material such as metal. The through hole is then filled with an insulating material or a conductive material to form the first conductive connection hole. In a specific implementation, the first dielectric layer may be made of an insulating dielectric material, and the thickness of the first dielectric layer may be greater than or equal to 35 μm.

[0019] In a specific implementation, the first conductive portion may include two conductive portions located on either side of the detection line, thereby shielding interference signals from the sides of the detection line. In a direction perpendicular to the surface of the support layer, the first shielding portion may cover the detection line and the first conductive portion. The first shielding portion has a larger coverage area and can provide a better shielding effect. Furthermore, in a direction perpendicular to the surface of the support layer, the first dielectric layer may cover the detection line and the first conductive portion, thereby providing better insulation and filling effects.

[0020] Furthermore, the transmission portion of the probe body in the embodiments of this application may also include: a second conductive portion and a second shielding portion. The second conductive portion is located on the surface of the support layer facing away from the detection line, and the second shielding portion is located on the side of the second conductive portion facing away from the support layer. The second conductive portion is electrically connected to the second shielding portion. The second shielding portion can provide a shielding effect, preventing the detection signal transmitted in the detection line from being interfered with by external signals, and can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object under test. In a specific implementation, the second shielding portion can be grounded. In a direction perpendicular to the surface of the support layer, the second shielding portion can cover a large area of ​​the detection line, thereby achieving a good shielding effect. In addition, electrically connecting the second conductive portion to the second shielding portion can enhance the shielding effect. In a specific implementation, the second shielding portion and the second conductive portion can be made of metal materials such as copper, silver, and iron. Of course, the second shielding portion and the second conductive portion can also be made of other conductive materials, which are not limited here. The thickness of the second shielding portion can be in the range of 12μm to 35μm, and the thickness of the second conductive portion can be in the range of 15μm to 50μm. In this way, shielding layers (or shielding parts) are provided around the detection line, which can effectively prevent external signals from interfering with the detection signal, so that the electric field probe has a higher resolution.

[0021] In one possible implementation, the transmission portion of the probe body may further include: a second dielectric layer and at least one second conductive connection hole, the second dielectric layer being positioned between the second conductive portion and the second shielding portion, the second conductive connection hole extending through the second dielectric layer and the second shielding portion, and the second conductive portion being electrically connected to the second shielding portion via the second conductive connection hole. During the manufacturing process, a through hole may be first formed in the second dielectric layer and the second shielding portion, followed by forming a conductive film on the inner wall of the through hole using a conductive material such as metal, and then filling the through hole with an insulating material or a conductive material to form the second conductive connection hole. In a specific implementation, the second dielectric layer may be made of an insulating dielectric material, and the thickness of the second dielectric layer may be greater than or equal to 35 μm.

[0022] In a specific implementation, the second conductive portion may be arranged in a pattern that surrounds the detection line in a direction perpendicular to the surface of the support layer, thereby shielding interference signals from above and to the side of the detection line. In other words, the second conductive portion may be arranged in a ring shape. In a direction perpendicular to the surface of the support layer, the second shielding portion may cover a majority of the detection line and the second conductive portion, thereby providing a good shielding effect. Furthermore, in a direction perpendicular to the surface of the support layer, the second dielectric layer may cover both the second conductive portion and the shielding portion, thereby providing good insulation and filling effects.

[0023] The probe body in the embodiment of the present application may further include: a third conductive connection hole, the third conductive connection hole passes through the first conductive part, the support layer, and the second conductive part, and the first conductive part is electrically connected to the second conductive part through the third conductive connection hole. In other words, the first shielding part, the first conductive part, the second conductive part, and the second shielding part having a shielding effect are electrically connected, thereby improving the shielding effect. During the manufacturing process, a through hole passing through the first conductive part, the support layer, and the second conductive part can be first made, and then a conductive film can be formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material can be filled in the through hole to form the third conductive connection hole.

[0024] In some embodiments of the present application, the transmission portion of the probe body has a plurality of first shielding holes, and the first shielding holes include: a first conductive connection hole, a second conductive connection hole, and a third conductive connection hole. In the first shielding holes, the projections of the first conductive connection hole, the second conductive connection hole, and the third conductive connection hole in a direction perpendicular to the surface of the supporting layer have an overlapping area, and one end of the third conductive connection hole is in contact with the first conductive connection hole, and the other end is in contact with the second conductive connection hole. The first shielding hole is electrically connected to the first shielding portion, the first conductive portion, the second conductive portion, and the second shielding portion, that is, the first shielding hole also has a shielding effect. In a specific implementation, the first shielding hole can be grounded. In the embodiment of the present application, by providing a plurality of first shielding holes, inter-plate resonance and other interference components can be suppressed.

[0025] In one possible implementation, the plurality of first shielding holes in the probe body are distributed on both sides of the detection line and extend from the detection end to the connection end. In a specific implementation, the plurality of first shielding holes in the probe body can be symmetrically (or approximately symmetrically) distributed on both sides of the detection line. In this way, the first shielding holes can be evenly distributed on both sides of the detection line, thereby achieving a better shielding effect.

[0026] In an embodiment of the present application, the probe body has at least one second shielding hole, which includes only a second conductive connection hole. The second shielding hole is located at the detection end of the probe body, and the second shielding hole and the projection of the detection line in a direction perpendicular to the surface of the support layer have an overlapping area. By providing the second shielding hole, interference signals at the detection end can be shielded, further improving the resolution of electric field detection. In specific implementations, the number of second shielding holes can be set according to the space in the probe body, and this is not limited here.

[0027] In an embodiment of the present application, the connection end of the probe body may include: a first connection part, a second connection part and an impedance matching via. The first connection part and the second conductive part are located in the same film layer (i.e., the above-mentioned second conductive film layer), and the second connection part and the second shielding part are located in the same film layer (i.e., the above-mentioned third conductive film layer). The impedance matching via may include: a first conductive via and a second conductive via that are in contact connection, the first conductive via passing through the detection line, the support layer and the first connection part, and the second conductive via passing through the second dielectric layer and the second connection part. The detection line is electrically connected to the first connection part through the first conductive via, the first connection part is electrically connected to the second connection part through the second conductive via, and the second connection part is used to connect to the detection device. Specifically, the second connection part can be connected to the detection device through a connector. In an embodiment of the present application, by providing the impedance matching via, the first connection part and the second connection part, an electrical connection between the detection line and the detection device can be achieved at the connection end.

[0028] In a specific implementation, the aperture of the impedance-matching via can be set larger. For example, the aperture of the impedance-matching via can be larger than the aperture of the first shielding hole (or the second shielding hole), so that the impedance of the impedance-matching via is smaller. In addition, the impedance-matching via can be equivalent to an inductor, and the second connecting portion can be equivalent to a capacitor. The resonance between the impedance-matching via and the second connecting portion can reduce the transmission impedance, reduce the loss of the detection signal during transmission, and improve the accuracy of electric field detection.

[0029] Specifically, the second connection portion may include a covering portion and a connecting wire. The covering portion covers the impedance-matching via in a direction perpendicular to the support layer. The connecting wire is connected to the covering portion and is used to connect to the detection device. The covering portion is electrically connected to the impedance-matching via, and the resonance between the covering portion and the impedance-matching via can reduce the transmission impedance. The covering portion leads the detection signal through the connecting wire. The width of the connecting wire is smaller than the size of the covering portion, thereby reducing the transmission loss during the detection signal extraction process.

[0030] In an embodiment of the present application, the transmission portion of the probe body may further include: a first solder resist layer and a second solder resist layer, wherein the first solder resist layer is located on the side of the film layer where the first shielding portion is located away from the support layer, and the second solder resist layer is located on the side of the second shielding portion away from the support layer. The first solder resist layer and the second solder resist layer may be flat, full-surface film layers, thereby covering the internal film layer of the probe body, insulating the external conductor and providing protection. In a specific implementation, the thickness of the first solder resist layer and the second solder resist layer may be between 12 μm and 30 μm.

[0031] In a second aspect, embodiments of the present application further provide an electric field probe. The electric field probe in embodiments of the present application may include: any probe body described in the first aspect, a connector, and a fixture. Because the probe body described in the first aspect can accurately detect vertical electric fields, the electric field probe including any probe body described in the first aspect has a high resolution.

[0032] In a third aspect, an embodiment of the present application further provides a detection system. The detection system provided by the embodiment of the present application may include: any of the electric field probes and detection equipment described in the second aspect above. The electric field probe may be used to detect the electric field of the object to be tested and transmit the detected detection signal to the detection equipment. The detection equipment may determine the electric field of the object to be tested based on the detection signal detected by the electric field probe. For example, the detection equipment in the embodiment of the present application may be a spectrum analyzer, an oscilloscope, or other equipment. Since the electric field probe provided by the embodiment of the present application has a high resolution, the detection system including the electric field probe in the embodiment of the present application has high detection accuracy and good near-field test effect.

[0033] Furthermore, the detection system in the embodiments of the present application may also include a controller and a robotic arm. The robotic arm can be used to secure the electric field probe, and the controller can be used to control the stepwise movement of the robotic arm to precisely move the electric field probe. Because the electric field probe in the embodiments of the present application has a high resolution, combined with the controller and the robotic arm to precisely control the movement of the electric field probe, accurate electric field detection can be achieved within the detection area of ​​the object to be detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic diagram of the structure of an electric field probe provided in an embodiment of the present application;

[0035] FIG2 is a schematic structural diagram of a probe body in an embodiment of the present application;

[0036] FIG3 is a schematic cross-sectional view of the dashed line L1 in FIG2 ;

[0037] FIG4 is a schematic diagram of the three-dimensional structure of the probe body at the detection end in an embodiment of the present application;

[0038] FIG5 is a schematic diagram of another three-dimensional structure of the probe body at the detection end in an embodiment of the present application;

[0039] FIG6 is a schematic structural diagram of the first conductive film layer, the first dielectric layer, and the first shielding portion in an embodiment of the present application;

[0040] FIG7 is a schematic structural diagram of the second conductive film layer, the third conductive film layer, and the second dielectric layer in an embodiment of the present application;

[0041] FIG8 is a schematic structural diagram of a first conductive film layer, a second conductive film layer, and a support layer in an embodiment of the present application;

[0042] FIG9 is a schematic diagram of another three-dimensional structure of the probe body at the detection end in an embodiment of the present application;

[0043] FIG10 is a schematic diagram of the three-dimensional structure of the probe body at the connection end in an embodiment of the present application;

[0044] FIG11 is a schematic cross-sectional view of the dashed line L2 in FIG10 ;

[0045] FIG12 is a schematic diagram of the planar structure of the third conductive film layer in FIG10;

[0046] FIG13 is a schematic diagram of a planar structure of a first solder resist layer or a second solder resist layer in an embodiment of the present application;

[0047] FIG14 is an analysis diagram of the electric field detection effect in an embodiment of the present application.

[0048] Reference numerals:

[0049] 100 - probe body; 11 - support layer; 12 - first conductive film layer; 121 - detection line; 122 - first conductive part; 131 - first shielding layer; 132 - second shielding layer; 133 - third shielding layer; 14 - first shielding part; 15 - first dielectric layer; 16 - second conductive film layer; 161 - second conductive part; 162 - first connecting part; 17 - third conductive film layer; 171 - second shielding part; 172 - second connecting part; 172a - covering part; 172b - connecting line; 18 - second dielectric layer Layer; 191-first solder resist layer; 192-second solder resist layer; 200-connector; 300-fixing part; 301-first fixing part; 302-second fixing part; W-object to be measured; m-detection area; A-detection end; B-connection end; C-transmission part; T-detection through hole; V1-first conductive connection hole; V2-second conductive connection hole; V3-third conductive connection hole; Q1-first shielding hole; Q2-second shielding hole; Q3-impedance matching via; U1-first conductive via; U2-second conductive via. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings.

[0051] It should be noted that the same reference numerals in the drawings of this application represent the same or similar structures, and thus their repeated description will be omitted. The words expressing positions and directions described in this application are all explained using the drawings as examples, but they can be modified as needed, and such modifications are included in the scope of protection of this application. The drawings of this application are only for illustrating relative positional relationships and do not represent true proportions.

[0052] In the related art, the resolution of the electric field probe is low (generally above 0.2mm) and the near-field test effect is poor. When the electric field in the detection area changes dramatically with the small traces or graphics, the electric field probe in the related art is insensitive to the small traces or graphics and cannot detect the electric field changes. Therefore, the electric field probe in the related art can only detect large areas above the board level and cannot perform electric field detection on small traces or graphics at the chip level or packaging level.

[0053] Based on this, in order to improve the resolution of the electric field probe to meet the electric field detection requirements at the chip level or package level. The embodiment of the present application provides a probe body, an electric field probe and a detection system. The electric field probe provided in the embodiment of the present application has a high resolution, which can reach a high resolution of less than 0.2 mm, and can improve the near-field test effect. Therefore, the electric field probe in the embodiment of the present application can detect the electric field changes of small traces or graphics, and can meet the electric field detection requirements at the chip level or package level. For example, it can detect the electric field radiated by each functional module (such as an analog module, a digital module, etc.) in the chip.

[0054] First, the detection system provided in the embodiment of the present application is introduced. The detection system provided in the embodiment of the present application may include: an electric field probe and a detection device. The electric field probe can be used to detect the electric field of the object to be tested and transmit the detected detection signal to the detection device. The detection device can determine the electric field of the object to be tested based on the detection signal detected by the electric field probe. For example, the detection device in the embodiment of the present application can be a spectrum analyzer, oscilloscope, or other device. Since the resolution of the electric field probe provided in the embodiment of the present application is relatively high, the detection system including the electric field probe in the embodiment of the present application has relatively high detection accuracy and better near-field test effect.

[0055] Furthermore, the detection system in the embodiments of the present application may also include a controller and a robotic arm. The robotic arm can be used to secure the electric field probe, and the controller can be used to control the stepwise movement of the robotic arm to precisely move the electric field probe. Because the electric field probe in the embodiments of the present application has a high resolution, combined with the controller and the robotic arm to precisely control the movement of the electric field probe, accurate electric field detection can be achieved within the detection area of ​​the object to be detected.

[0056] FIG1 is a schematic diagram of the structure of an electric field probe provided in an embodiment of the present application. As shown in FIG1 , the electric field probe in the embodiment of the present application may include: a probe body 100, a connector 200, and a fixing member 300. The probe body 100 has a detection end A and a connection end B. The detection end A is used to detect the electric field of the object to be measured W, and the connection end B is used to connect to the detection equipment. The probe body 100 is connected to the connector 200 via the connection end B. The probe body 100 is used to electrically connect to the detection equipment via the connector 200. The fixing member 300 is used to fix the connection between the probe body 100 and the connector 200. Specifically, the fixing member 300 may include a first fixing portion 301 and a second fixing portion 302. The second fixing portion 302 is used to fix the connection with the robotic arm. The first fixing portion 301 is used to fix the connection between the second fixing portion 302, the probe body 100, and the connector 200.

[0057] During specific implementation, the probe body 100 can be precisely moved by controlling the robot arm to place the probe body 100 on the object to be measured W. The probe body 100 can detect the electric field of the object to be measured W at the detection end A and transmit the detected detection signal to the detection device through the connector 200. The detection device can determine the electric field of the object to be measured W based on the detection signal detected by the detection body 100, thereby realizing electric field detection of the object to be measured W.

[0058] Figure 2 is a schematic diagram of the structure of the probe body in an embodiment of the present application. Figure 3 is a schematic cross-sectional view taken along the dashed line L1 in Figure 2. Figures 4 and 5 are schematic diagrams of the three-dimensional structure of the probe body at the detection end, respectively, from different perspectives. In conjunction with Figures 1 to 5 , the probe body 100 in an embodiment of the present application may include: a transmission portion C, a detection line 121, and a detection end A and a connection end B, respectively disposed at both ends of the transmission portion C. The detection line 121 is disposed within the transmission portion C. The end surface of the detection end A is provided with a first shielding layer 131, and a detection through hole T is disposed in the first shielding layer 131. The detection line 121 extends from the connection end B along the transmission portion C to the detection through hole T, and the detection line 121 is insulated from the first shielding layer 131. The detection line 121 can escape through the detection through hole T in the first shielding layer 131. The first shielding layer 131 can function as an electric field shield. In a specific implementation, the first shielding layer 131 can be grounded. The detection line 121 is used to detect the electric field of the object to be detected W at the detection end A through the detection through hole T, and transmit the detection signal obtained by the detection to the connection end B through the transmission part C.

[0059] During electric field detection, the detection end A of the probe body 100 can be positioned perpendicular to the surface of the object W to be measured. The first shielding layer 131 can shield the electric field in directions other than the vertical direction, so that only the electric field in the vertical direction can be detected by the detection line 121. The vertical direction refers to the direction perpendicular to the surface of the object W to be measured, such as the direction indicated by the arrow z in Figure 1. The detection line 121 leaking out of the detection through hole T can form an electric potential difference with the first shielding layer 131 and couple with the electric field in the vertical direction z, thereby detecting the component of the electric field in the vertical direction z. The detection signal obtained can be approximately proportional to the component of the electric field in the vertical direction z.

[0060] In the electric field probe provided in the embodiment of the present application, by providing a first shielding layer 131 at the end of the detection end A of the probe body 100, and allowing the detection line 121 to leak through the detection through hole T in the first shielding layer 131, the electric field in the vertical direction can be accurately detected, interference from electric fields in other directions can be eliminated, and the resolution of the electric field detection can be improved. In addition, the electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process. The chip carrier board process can produce traces with smaller line widths. Therefore, a thinner detection line 121 can be produced, for example, a detection line 121 with a line width of approximately 15 μm can be produced. The overall thickness of the probe body 100 can be less than 0.7 mm. For example, the entire thickness of the probe body 100 can be in the range of 0.4 mm to 0.7 mm, thereby further improving the resolution of the electric field probe to a resolution of less than 0.1 mm.

[0061] In one possible implementation, the end of the detection line 121 can be flush with the outer surface of the first shielding layer 131, and an insulating dielectric material can be filled between the detection line 121 and the inner wall of the detection through hole T to ensure that the detection line 121 is insulated from the first shielding layer 131. The detection line 121 and the first shielding layer 131 can be made of metal materials such as copper, silver, and iron. Of course, the detection line 121 and the first shielding layer 131 can also be made of other conductive materials, which are not limited here. The thickness of the detection line 121 can be in the range of 15μm to 50μm.

[0062] 1 and 2 , in the embodiment of the present application, the probe body 100 is in a broken line shape as an example for illustration. In specific implementation, the shape of the probe body 100 can be set according to actual needs, which is not limited here.

[0063] 2, 4, and 5, in an embodiment of the present application, the probe body 100 may further include: a second shielding layer 132 and a third shielding layer 133, wherein the second shielding layer 132 and the third shielding layer 133 respectively cover two opposite outer side surfaces of the transmission portion C and extend from the detection end A along the transmission portion C to the connection end B. In other words, the two opposite outer side surfaces of the probe body 100 are completely wrapped by the second shielding layer 132 and the third shielding layer 133. The second shielding layer 132 and the third shielding layer 133 can act as a shield, thereby preventing the detection signal transmitted in the detection line 121 from being interfered with by external signals, further improving the resolution of electric field detection. In a specific implementation, the second shielding layer 132 and the third shielding layer 133 can be grounded. In addition, using a shielding layer to wrap the outer side surface and end surface of the probe body 100 can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object to be measured W.

[0064] In a possible implementation, the second shielding layer 132 and the third shielding layer 133 can be made of metal materials such as copper, silver, and iron. Of course, the second shielding layer 132 and the third shielding layer 133 can also be made of other conductive materials, which is not limited here.

[0065] As shown in Figures 2 and 3, in the probe body provided in the embodiment of the present application, the transmission part C of the probe body may include: a support layer 11, a first shielding part 14 and a first conductive part 122. The support layer 11 can be used to support the detection line 121 and the first conductive part 122. The support layer 11 can be made of an insulating dielectric material. The thickness of the support layer 11 can be between 90μm and 110μm. For example, the thickness of the support layer 11 can be about 100μm. The support layer 11 is hard, so that it can support the detection line 121 and other film layers mentioned later. The detection line 121 and the first conductive part 122 are located on the surface of one side of the support layer 11, and the first shielding part 14 is located on the side of the detection line 121 and the first conductive part 122 away from the support layer 11. The first conductive part 122 can be located in the same film layer as the detection line 121. In the embodiment of the present application, the film layer where the detection line 121 and the first conductive part 122 are located is referred to as the first conductive film layer 12. The first conductive portion 122 is electrically connected to the first shielding portion 14, and the first conductive portion 122 is insulated from the detection line 121. The first shielding portion 14 can act as a shield, preventing the detection signal transmitted in the detection line 121 from being interfered with by external signals, and can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object to be measured. In a specific implementation, the first shielding portion 14 can be grounded. In a direction perpendicular to the surface of the support layer 11, the first shielding portion 14 can cover the detection line 121, thereby achieving a better shielding effect. In addition, the first conductive portion 122 is electrically connected to the first shielding portion 14 to enhance the shielding effect. In a specific implementation, the first shielding portion 14 can be made of metal materials such as copper, silver, and iron. Of course, the first shielding portion 14 can also be made of other conductive materials, which are not limited here. The thickness of the first shielding portion 14 can be in the range of 12μm to 35μm.

[0066] Continuing with Figures 2 and 3 , the transmission portion of the probe body may further include: a first dielectric layer 15 and at least one first conductive connection hole V1. The first dielectric layer 15 is located between the first shielding portion 14 and the first conductive film layer 12. The first conductive connection hole V1 extends through the first dielectric layer 15 and the first shielding portion 14. The first conductive portion 122 is electrically connected to the first shielding portion 14 via the first conductive connection hole V1. During the manufacturing process, a through hole can be first formed in the first dielectric layer 15 and the first shielding portion 14. A conductive film is then formed on the inner wall of the through hole using a conductive material such as metal. The through hole is then filled with an insulating material or a conductive material to form the first conductive connection hole V1. In a specific implementation, the first dielectric layer 15 can be made of an insulating dielectric material, and the thickness of the first dielectric layer 15 can be greater than or equal to 35 μm.

[0067] FIG6 is a schematic structural diagram of the first conductive film layer, the first dielectric layer, and the first shielding portion in an embodiment of the present application. (1) in FIG6 is a schematic structural diagram of the first conductive film layer 12, (2) in FIG6 is a schematic structural diagram of the first dielectric layer 15, and (3) in FIG6 is a schematic structural diagram of the first shielding portion 14. In combination with FIG3 and FIG6, the first conductive portion 122 may include two conductive portions located on both sides of the detection line 121, so that the interference signal on the side of the detection line 121 can be shielded. In the direction perpendicular to the surface of the support layer 11, the first shielding portion 14 can cover the detection line 121 and the first conductive portion 122. The coverage range of the first shielding portion 14 is large, which can achieve a good shielding effect. In addition, in the direction perpendicular to the surface of the support layer 11, the first dielectric layer 15 can cover the detection line 121 and the first conductive portion 122, so that it can achieve a good insulation and filling effect.

[0068] Furthermore, as shown in Figures 2 and 3, the transmission portion of the probe body in the embodiment of the present application may also include: a second conductive portion 161 and a second shielding portion 171. The second conductive portion 161 is located on the surface of the support layer 11 on the side facing away from the detection line 121, and the second shielding portion 171 is located on the side of the second conductive portion 161 facing away from the support layer 11. The second conductive portion 161 is electrically connected to the second shielding portion 171. The second shielding portion 171 can act as a shield to prevent the detection signal transmitted in the detection line 121 from being interfered with by external signals, and can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object to be measured. In a specific implementation, the second shielding portion 171 can be grounded. In a direction perpendicular to the surface of the support layer 11, the second shielding portion 171 can cover most of the area of ​​the detection line 121, thereby achieving a better shielding effect. In addition, arranging the second conductive portion 161 to be electrically connected to the second shielding portion 171 can enhance the shielding effect. In a specific implementation, the second shielding portion 171 and the second conductive portion 161 can be made of metal materials such as copper, silver, and iron. Of course, the second shielding portion 171 and the second conductive portion 161 can also be made of other conductive materials, which are not limited here. The thickness of the second shielding portion 171 can be in the range of 12μm to 35μm, and the thickness of the second conductive portion 161 can be in the range of 15μm to 50μm. In this way, the detection line 121 is surrounded by a shielding layer (or shielding portion), which can effectively prevent external signals from interfering with the detection signal, so that the electric field probe has a higher resolution.

[0069] Continuing with Figures 2 and 3 , the transmission portion of the probe body may further include: a second dielectric layer 18 and at least one second conductive connection hole V2. The second dielectric layer 18 is located between the second conductive portion 161 and the second shielding portion 171. The second conductive connection hole V2 extends through the second dielectric layer 18 and the second shielding portion 171, electrically connecting the second conductive portion 161 to the second shielding portion 171 via the second conductive connection hole V2. During the manufacturing process, a through hole can be first formed in the second dielectric layer 18 and the second shielding portion 171. A conductive film is then formed on the inner wall of the through hole using a conductive material such as metal. The through hole is then filled with an insulating material or a conductive material to form the second conductive connection hole V2. In a specific implementation, the second dielectric layer 18 can be made of an insulating dielectric material, and the thickness of the second dielectric layer 18 can be greater than or equal to 35 μm.

[0070] FIG7 is a schematic diagram of the structure of the second conductive film layer, the third conductive film layer and the second dielectric layer in an embodiment of the present application, wherein the second conductive film layer is the film layer where the second conductive portion is located, and the third conductive film layer is the film layer where the second shielding portion is located. FIG7 (1) is a schematic diagram of the structure of the third conductive film layer 17, FIG7 (2) is a schematic diagram of the structure of the second dielectric layer 18, and FIG7 (3) is a schematic diagram of the structure of the second conductive film layer 16. In combination with FIG3, FIG6 and FIG7, in the direction perpendicular to the surface of the support layer 11, the pattern of the second conductive portion 161 surrounds the detection line 121, which can shield the interference signal above the side of the detection line 121, that is, the pattern of the second conductive portion 161 can be annular. In the direction perpendicular to the surface of the support layer 11, the second shielding portion 171 can cover most of the area of ​​the detection line 121 and the second conductive portion 161, which can achieve a good shielding effect. Moreover, in the direction perpendicular to the surface of the support layer 11, the second dielectric layer 18 can cover the second conductive portion 161 and the second shielding portion 171, thereby achieving a good insulation and filling effect.

[0071] FIG8 is a schematic diagram of the structure of the first conductive film layer, the second conductive film layer and the support layer in the embodiment of the present application. (1) in FIG8 is a schematic diagram of the structure of the second conductive film layer 16, (2) in FIG8 is a schematic diagram of the structure of the support layer 11, and (3) in FIG8 is a schematic diagram of the structure of the first conductive film layer 12. In combination with FIG3 and FIG8, the transmission part of the probe body in the embodiment of the present application may also include: a third conductive connection hole V3, the third conductive connection hole V3 passes through the first conductive part 122, the support layer 11 and the second conductive part 161, and the first conductive part 122 is electrically connected to the second conductive part 161 through the third conductive connection hole V3. In other words, the first shielding part 14, the first conductive part 122, the second conductive part 161 and the second shielding part 171 with a shielding effect are electrically connected, thereby improving the shielding effect. In the manufacturing process, a through hole can be first made that passes through the first conductive part 122, the support layer 11 and the second conductive part 161, and then a conductive film is formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material is filled in the through hole to form the third conductive connection hole V3.

[0072] In conjunction with Figures 2, 3, 6, 7, and 8, in some embodiments of the present application, the transmission portion of the probe body 100 has multiple first shielding holes Q1. These first shielding holes Q1 include a first conductive connection hole V1, a second conductive connection hole V2, and a third conductive connection hole V3. Within the first shielding holes Q1, the projections of the first conductive connection hole V1, the second conductive connection hole V2, and the third conductive connection hole V3 in a direction perpendicular to the surface of the support layer 11 (e.g., the direction indicated by arrow y in the figures) overlap. One end of the third conductive connection hole V3 is in contact with the first conductive connection hole V1, and the other end is in contact with the second conductive connection hole V2. The first shielding holes Q1 are electrically connected to the first shielding portion 14, the first conductive portion 122, the second conductive portion 161, and the second shielding portion 171, meaning that the first shielding holes Q1 also provide shielding. In specific implementations, the first shielding holes Q1 can be grounded. In embodiments of the present application, providing multiple first shielding holes Q1 can suppress inter-board resonance and other interference components.

[0073] In one possible implementation, the multiple first shielding holes Q1 in the probe body 100 are distributed on both sides of the detection line 121 and extend from the detection end A to the connection end B. In a specific implementation, the multiple first shielding holes Q1 in the probe body 100 can be symmetrically distributed (or approximately symmetrically distributed) on both sides of the detection line 121. In this way, the first shielding holes Q1 can be evenly distributed on both sides of the detection line 121, thereby achieving a better shielding effect.

[0074] FIG9 is another schematic diagram of the three-dimensional structure of the probe body at the detection end in an embodiment of the present application. In combination with FIG3, FIG7 and FIG9, the probe body 100 has at least one second shielding hole Q2. The second shielding hole Q2 only includes: a second conductive connection hole V2. The second shielding hole Q2 is located at the detection end of the probe body 100, and the second shielding hole Q2 and the projection of the detection line 121 in a direction perpendicular to the surface of the support layer 11 (for example, the direction indicated by the arrow y in the figure) have an overlapping area. By setting the second shielding hole Q2, the interference signal at the detection end can be shielded, further improving the resolution of the electric field detection. The figure illustrates the setting of one second shielding hole Q2 as an example. In specific implementation, the number of second shielding holes Q2 can be set according to the space of the probe body, which is not limited here.

[0075] Figure 10 is a schematic diagram of the three-dimensional structure of the probe body at the connection end in an embodiment of the present application, and Figure 11 is a schematic cross-sectional diagram at the dashed line L2 in Figure 10. As shown in Figures 10 and 11, in this embodiment of the present application, the connection end of the probe body may include: a first connection portion 162, a second connection portion 172, and an impedance matching via Q3. The first connection portion 162 and the second conductive portion 161 are located in the same film layer (i.e., the second conductive film layer described above), and the second connection portion 172 and the second shielding portion 171 are located in the same film layer (i.e., the third conductive film layer described above). The impedance matching via Q3 may include: a first conductive via U1 and a second conductive via U2 for contact connection. The first conductive via U1 extends through the detection line 121, the support layer 11, and the first connection portion 162. The second conductive via U2 extends through the second dielectric layer 18 and the second connection portion 172. Detection line 121 is electrically connected to first connection portion 162 via first conductive via U1. First connection portion 162 is electrically connected to second connection portion 172 via second conductive via U2. Second connection portion 172 is used to connect to a detection device. Specifically, second connection portion 172 can be connected to the detection device via a connector. In this embodiment of the present application, by providing impedance matching via Q3, first connection portion 162, and second connection portion 172, an electrical connection between detection line 121 and the detection device can be achieved at the connection end.

[0076] In a specific implementation, the aperture of the impedance-matching via Q3 can be set larger. For example, the aperture of the impedance-matching via Q3 can be larger than the aperture of the first shielding hole Q1 (or the second shielding hole Q2), so that the impedance of the impedance-matching via Q3 is smaller. In addition, the impedance-matching via Q3 can be equivalent to an inductor, and the second connecting portion 172 can be equivalent to a capacitor. The resonance between the impedance-matching via Q3 and the second connecting portion 172 can reduce the transmission impedance, minimize the loss of the detection signal during transmission, and improve the accuracy of electric field detection.

[0077] Figure 12 is a schematic diagram of the planar structure of the third conductive film layer in Figure 10. Combining Figures 10 and 12, the second connection portion 172 may include a covering portion 172a and a connecting line 172b. Covering portion 172a covers the impedance matching via Q3 in a direction perpendicular to the support layer. Connecting line 172b is connected to covering portion 172a and is used to connect to the detection equipment. Covering portion 172a is electrically connected to impedance matching via Q3, and the resonance between covering portion 172a and impedance matching via Q3 can reduce transmission impedance. Covering portion 172a leads the detection signal through connecting line 172b. The width of connecting line 172b is smaller than the size of covering portion 172a, thereby reducing transmission loss during the detection signal extraction process.

[0078] In an embodiment of the present application, as shown in FIG3 , the transmission portion of the probe body may further include: a first solder resist layer 191 and a second solder resist layer 192 , wherein the first solder resist layer 191 is located on the side of the film layer where the first shielding portion 14 is located away from the support layer 11 , and the second solder resist layer 192 is located on the side of the second shielding portion 171 away from the support layer 11 . FIG13 is a schematic diagram of the planar structure of the first solder resist layer or the second solder resist layer in an embodiment of the present application. Combining FIG3 and FIG13 , the first solder resist layer 191 and the second solder resist layer 192 are flat, full-surface film layers, which can cover the internal film layer of the probe body, playing the role of insulating the external conductor and protecting it. In a specific implementation, the thickness of the first solder resist layer 191 and the second solder resist layer 192 can be between 12 μm and 30 μm.

[0079] FIG14 is an analysis diagram of the electric field detection effect in the embodiment of the present application. (1) in FIG14 is a plan view of the object to be detected, and (2) in FIG14 is a schematic diagram of the analysis structure of the electric field detection of the detection area of ​​the object to be detected. The horizontal axis in the figure represents

[0080] As shown in FIG14 , there are three lines in the object to be measured W, the line width of the lines is about 0.1 mm, and the line spacing between adjacent lines is about 0.1 mm. The electric field probe in the embodiment of the present application is used to detect the electric field of the object to be measured W. The electric field probe is placed above the object to be measured W, and the detection area m is scanned to detect the electric field distribution in the detection area m, and the result shown in (2) in FIG14 is obtained. It can be clearly seen from (2) in FIG14 that the electric field probe in the embodiment of the present application can detect the electric field distribution in the detection area m. In the figure, d1 represents the line width of the lines, and d2 represents the line spacing of the lines. According to the result shown in (2) in FIG14 , it can be determined that the line width d1 is about 0.1 mm and the line spacing d2 is about 0.1 mm. It can be proved that the electric field probe in the embodiment of the present application can achieve a detection resolution of 0.1 mm. In specific implementation, the electric field probe in the embodiment of the present application can perform electric field detection in the frequency band range of 30 MHz to 6 GHz.

[0081] The structure of the probe body in the embodiment of the present application is described in detail above. The following describes the manufacturing process of the probe body in the embodiment of the present application with reference to Figures 3 and 11.

[0082] During the manufacturing process, a first conductive film layer 12 and a second conductive film layer 16 can be formed on the surfaces on both sides of the support layer 11, and the first conductive film layer 12 and the second conductive film layer 16 can be patterned respectively to obtain a detection line 121 and a first conductive portion 122 located in the first conductive film layer 12, and a second conductive portion 161 and a first connecting portion 162 located in the second conductive film layer 16.

[0083] Mechanical punching is used to punch the laminated structure of the first conductive film layer 12, the support layer 11 and the second conductive film layer 16 to obtain the third conductive connection hole V3 and the first conductive via U1. In specific implementation, holes can be punched on both sides of the laminated structure to reduce the difficulty of the punching process.

[0084] Next, a second dielectric layer 18 and a third conductive film layer 17 are formed on the surface of the second conductive film layer 16. The third conductive film layer 17 is patterned to obtain a second shielding portion 171 and a second connecting portion 172 within the third conductive film layer 17. The stacked structure of the second dielectric layer 18 and the third conductive film layer 17 is punched to obtain a second conductive connecting hole V2 and a second conductive via U2. A first dielectric layer 15 and a first shielding portion 14 are formed on the surface of the first conductive film layer 12. The stacked structure of the first dielectric layer 15 and the first shielding portion 14 is punched to obtain a first conductive connecting hole V1.

[0085] Finally, a first solder resist layer 191 is formed on the surface of the first shield portion 14 , and a second solder resist layer 192 is formed on the surface of the third conductive film layer 17 .

[0086] The electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process. The chip carrier board process can produce routing lines with smaller line widths. Therefore, a thinner detection line 121 can be produced. For example, a detection line 121 with a line width of approximately 15 μm can be produced. The overall thickness of the probe body 100 can be less than 0.7 mm, thereby improving the resolution of the electric field probe and making the resolution reach below 0.1 mm.

[0087] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0088] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include such modifications and variations.

Claims

1. A probe body, characterized in that: It comprises a transmission part, a detection line, and a detection end and a connection end respectively arranged at two ends of the transmission part, wherein the detection line is arranged inside the transmission part; The detection end is used to detect the electric field of the object to be detected; The connection end is used to connect the detection equipment; The end surface of the detection end is provided with a first shielding layer, and the first shielding layer is provided with a detection through hole; The detection line extends from the connection end along the transmission part to the detection through hole, and the detection line is insulated from the first shielding layer; the detection line is used to detect the electric field of the object to be detected at the detection end through the detection through hole, and transmit the detection signal obtained by detection to the connection end through the transmission part.

2. The probe body according to claim 1, characterized in that: The probe body also includes: a second shielding layer and a third shielding layer; The second shielding layer and the third shielding layer respectively cover two opposite outer side surfaces of the transmission portion, and extend from the detection end along the transmission portion to the connection end.

3. The probe body according to claim 1 or 2, characterized in that: The transmission part comprises: a supporting layer, a first shielding part and a first conductive part; The supporting layer is used to support the detection line and the first conductive part; The first shielding portion is located at a side of the detection line and the first conductive portion away from the supporting layer; The first conductive portion is electrically connected to the first shielding portion, and the first conductive portion is insulated from the detection line.

4. The probe body according to claim 3, characterized in that: The transmission part further includes: a first dielectric layer and at least one first conductive connection hole; The first dielectric layer is located between the first shielding portion and the film layer where the detection line is located; The first conductive connection hole penetrates the first dielectric layer and the first shielding portion, and the first conductive portion is electrically connected to the first shielding portion through the first conductive connection hole.

5. The probe body according to claim 4, characterized in that: The transmission part further includes: a second conductive part and a second shielding part; The second conductive portion is located on a surface of the support layer away from the detection line, and the second shielding portion is located on a side of the second conductive portion away from the support layer; The second conductive portion is electrically connected to the second shielding portion.

6. The probe body according to claim 5, characterized in that: The transmission part further includes: a second dielectric layer and at least one second conductive connection hole; The second dielectric layer is located between the second conductive portion and the second shielding portion; The second conductive connection hole penetrates the second dielectric layer and the second shielding portion, and the second conductive portion is electrically connected to the second shielding portion through the second conductive connection hole.

7. The probe body according to claim 6, characterized in that: The transmission part further includes: a third conductive connection hole; The third conductive connection hole penetrates the first conductive part, the support layer and the second conductive part; The first conductive portion is electrically connected to the second conductive portion through the third conductive connection hole.

8. The probe body according to claim 7, characterized in that: The transmission part also has a plurality of first shielding holes; The first shielding hole includes: the first conductive connection hole, the second conductive connection hole and the third conductive connection hole; In the first shielding hole, the projections of the first conductive connection hole, the second conductive connection hole and the third conductive connection hole in a direction perpendicular to the surface of the supporting layer have an overlapping area, and one end of the third conductive connection hole is in contact with the first conductive connection hole, and the other end is in contact with the second conductive connection hole.

9. The probe body according to claim 8, characterized in that: The plurality of first shielding holes are distributed on both sides of the detection line and extend from the detection end to the connection end.

10. The probe body according to any one of claims 6 to 9, characterized in that: The probe body has at least one second shielding hole; The second shielding hole only includes: the second conductive connection hole; The second shielding hole is located at the detection end, and the second shielding hole has an overlapping area with a projection of the detection line in a direction perpendicular to the surface of the support layer.

11. The probe body according to any one of claims 6 to 10, characterized in that: The connecting end comprises: a first connecting portion, a second connecting portion and an impedance matching via located at the connecting end; The first connecting portion and the second conductive portion are located in the same film layer, and the second connecting portion and the second shielding portion are located in the same film layer; The impedance matching via comprises: a first conductive via and a second conductive via in contact connection; The first conductive via penetrates the detection line, the support layer and the first connecting portion, and the second conductive via penetrates the second dielectric layer and the second connecting portion; The detection line is electrically connected to the first connection portion through the first conductive via, and the first connection portion is electrically connected to the second connection portion through the second conductive via; The second connecting portion is used to connect to a detection device.

12. The probe body according to claim 11, characterized in that: The second connecting portion includes: a covering portion and a connecting line; The covering portion covers the impedance matching via in a direction perpendicular to the supporting layer, and the connecting wire is connected to the covering portion; The connecting line is used to connect with the detection device.

13. The probe body according to any one of claims 5 to 12, characterized in that: The transmission part further includes: a first solder resist layer and a second solder resist layer; The first solder resist layer is located on a side of the film layer where the first shielding portion is located away from the supporting layer, and the second solder resist layer is located on a side of the second shielding portion away from the supporting layer.

14. An electric field probe, characterized in that: include: The probe body, the fixing part and the connector according to any one of claims 1 to 13; The probe body is connected to the connector via the connecting end, and the probe body is used to be electrically connected to the detection device via the connector; The fixing member is used for fixing and connecting the probe body and the connector.

15. A detection system, characterized in that: include: The electric field probe and detection device as claimed in claim 14; The electric field probe is used to detect the electric field of the object to be measured; The detection device is used to determine the electric field of the object to be detected based on the detection signal detected by the electric field probe.

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