Capacitor element

Abstract

A capacitor element 1 includes: a capacitor part 10 including an anode plate 11 having a porous part 11B on at least one main surface of a core part 11A, a dielectric layer 13 provided on a surface of the porous part 11B, and a cathode layer 12 provided on a surface of the dielectric layer 13; a sealing layer 20 provided so as to cover at least one main surface of the pair of main surfaces facing each other in a thickness direction of the capacitor part 10; a conductor wiring layer 30 provided on at least one main surface of the pair of main surfaces facing each other in a thickness direction of the sealing layer 20; and a plurality of through conductors 40 penetrating the capacitor part 10 and the sealing layer 20 in the thickness direction. When the conductor wiring layer 30 provided on the first main surface 20a of the sealing layer 20 is viewed in a plan view from the thickness direction, the total area of the portion where the conductor wiring layer 30 on the first main surface 20a overlaps a region surrounded by the outer peripheral edge of the anode plate 11 is 60% or more of the area of the region surrounded by the outer peripheral edge of the anode plate 11. When a virtual circle 50 in which the area ratio of the conductor wiring layer 30 in the circle is 100% is arranged on the conductor wiring layer 30 provided on the first main surface 20a of the sealing layer 20 in a plan view from the thickness direction, the maximum value Rmax of the radius that the virtual circle 50 can take is 45% or less of the minimum value Dmin of the center-to-center distance between the through conductors 40.

Description

Capacitor element

[0001] The present invention relates to a capacitor element.

[0002] Patent Document 1 discloses a capacitor array including multiple solid electrolytic capacitor elements formed by dividing a single solid electrolytic capacitor sheet, a sheet-like first sealing layer, and a sheet-like second sealing layer. The solid electrolytic capacitor sheet includes an anode plate made of a valve metal, a porous layer provided on at least one major surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, and has first and second major surfaces opposing each other in the thickness direction. The first major surface side of each of the multiple solid electrolytic capacitor elements is disposed on the first sealing layer. The second sealing layer is disposed so as to cover the multiple solid electrolytic capacitor elements on the first sealing layer from the second major surface side. The solid electrolytic capacitor elements are separated by slit-shaped sheet removal portions.

[0003] Japanese Patent Application Laid-Open No. 2020-167361

[0004] Patent Document 1 describes that external electrodes connected to the anode and cathode plates of the capacitor array may be formed on the outside of the first sealing layer or the second sealing layer of the capacitor array, respectively. According to Patent Document 1, for example, external electrodes having a desired pattern can be formed by attaching copper foil and then performing an etching process.

[0005] However, if the external electrodes (hereinafter referred to as conductor wiring layers) provided outside the sealing layer do not have a certain size, current loss will increase. On the other hand, if the conductor wiring layers provided outside the sealing layer are too large, adhesion to the insulating layer provided further outside the capacitor array (hereinafter referred to as capacitor element) will decrease, making peeling, known as delamination, more likely to occur. Thus, it can be said that the conventional structure has room for improvement in terms of achieving both reduced current loss and suppression of delamination.

[0006] The above problem is not limited to a structure in which multiple capacitor units are arranged inside a sealing layer, but also occurs in a structure in which one capacitor unit is arranged inside a sealing layer.

[0007] The present invention has been made to solve the above problems, and an object of the present invention is to provide a capacitor element that can reduce current loss and suppress delamination.

[0008] The capacitor element of the present invention comprises a capacitor section including an anode plate having a porous section on at least one main surface of a core section, a dielectric layer provided on the surface of the porous section, and a cathode layer provided on the surface of the dielectric layer, a sealing layer provided so as to cover at least one of a pair of main surfaces opposing each other in a thickness direction of the capacitor section, a conductor wiring layer provided on at least one of the pair of main surfaces opposing each other in the thickness direction of the sealing layer, and a plurality of through conductors penetrating the capacitor section and the sealing layer in the thickness direction. When the conductor wiring layer provided on a first main surface of the sealing layer is viewed in a plan view from the thickness direction, the total area of ​​a portion of the conductor wiring layer on the first main surface overlapping a region surrounded by an outer periphery of the anode plate is 60% or more of the area of ​​the region surrounded by the outer periphery of the anode plate. When an imaginary circle is placed on the conductor wiring layer provided on the first main surface of the sealing layer in a plan view from the thickness direction, such that the area ratio of the conductor wiring layer within the circle is 100%, the maximum radius R of the imaginary circle is 100%. ｍａｘ is the minimum value D of the center-to-center distance between the through conductors. ｍｉｎ This is less than 45% of the total.

[0009] According to the present invention, it is possible to provide a capacitor element that can reduce current loss and suppress delamination.

[0010] Fig. 1 is a cross-sectional view schematically showing an example of a capacitor element of the present invention. Fig. 2 is a plan view taken along line A in Fig. 1. Fig. 3 is a plan view taken along line B in Fig. 1. Fig. 4 is a plan view taken along line C in Fig. 1. Fig. 5 is a diagram showing the maximum radius R that an imaginary circle can have. ｍａｘ 6 is a plan view for explaining the minimum value D of the center-to-center distance between the through conductors.ｍｉｎ 7A is a plan view for explaining the above. FIG. 7A is a plan view schematically showing an example of the ratio of the total area of ​​the conductor wiring layer overlapping with the region surrounded by the outer peripheral edge of the anode plate. FIG. 7B is a plan view schematically showing another example of the ratio of the total area of ​​the conductor wiring layer overlapping with the region surrounded by the outer peripheral edge of the anode plate. FIG. 7C is a plan view schematically showing another example of the ratio of the total area of ​​the conductor wiring layer overlapping with the region surrounded by the outer peripheral edge of the anode plate. FIG. 7D is a plan view schematically showing another example of the ratio of the total area of ​​the conductor wiring layer overlapping with the region surrounded by the outer peripheral edge of the anode plate. FIG. 7E is a plan view schematically showing another example of the ratio of the total area of ​​the conductor wiring layer overlapping with the region surrounded by the outer peripheral edge of the anode plate. FIG. 8A is a plan view schematically showing an example of the ratio of the maximum radius that a virtual circle can have. FIG. 8B is a plan view schematically showing another example of the ratio of the maximum radius that a virtual circle can have. Fig. 8C is a plan view schematically showing another example of the ratio of the maximum radius that an imaginary circle can have. Fig. 8D is a plan view schematically showing another example of the ratio of the maximum radius that an imaginary circle can have. Fig. 8E is a plan view schematically showing another example of the ratio of the maximum radius that an imaginary circle can have. Fig. 9 is a plan view schematically showing an example of a capacitor array including a capacitor element of the present invention.

[0011] The capacitor element of the present invention will be described below. Note that the present invention is not limited to the following configurations and may be modified as appropriate within the scope of the present invention. In addition, a combination of multiple individual preferred configurations described below also constitutes the present invention.

[0012] In this specification, terms indicating the relationship between elements (e.g., "perpendicular," "parallel," "orthogonal," etc.) and terms indicating the shapes of elements are not expressions that only express a strict meaning, but are expressions that mean that a range of substantial equivalence, for example, a difference of about a few percent, is included. Furthermore, in this specification, "same" or "equivalent" is not an expression that means only completely identical or equivalent, but is an expression that means that substantially identical or equivalent, for example, a difference of about a few percent, is included.

[0013] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, and other scales may differ from those of the actual product. In the drawings, the same or equivalent parts will be designated by the same reference numerals. In addition, the same elements will be designated by the same reference numerals in each drawing, and duplicate explanations will be omitted.

[0014] FIG. 1 is a cross-sectional view schematically showing an example of a capacitor element of the present invention.

[0015] 1 includes a capacitor section 10, a sealing layer 20 provided so as to cover at least one of a pair of principal surfaces opposed to each other in the thickness direction of the capacitor section 10 (the vertical direction in FIG. 1 ), a conductor wiring layer 30 provided on at least one of the pair of principal surfaces opposed to each other in the thickness direction of the sealing layer 20, and a plurality of through conductors 40 that penetrate the capacitor section 10 and the sealing layer 20 in the thickness direction. As shown in FIG. 1 , the capacitor element 1 may further include via conductors 35.

[0016] Fig. 2 is a plan view taken along line A in Fig. 1. Fig. 3 is a plan view taken along line B in Fig. 1. Fig. 4 is a plan view taken along line C in Fig. 1. Note that via conductors 35 are omitted in Fig. 3. Furthermore, through conductors 40 are omitted in Fig. 4.

[0017] 1, one capacitor section 10 is disposed inside sealing layer 20. The number of capacitor sections 10 disposed inside sealing layer 20 is not particularly limited.

[0018] The capacitor section 10 includes an anode plate 11 having a porous portion 11B on at least one main surface of a core portion 11A, a dielectric layer 13 provided on the surface of the porous portion 11B, and a cathode layer 12 provided on the surface of the dielectric layer 13. This makes up an electrolytic capacitor. In the example shown in Fig. 1, the anode plate 11 has the porous portion 11B on both main surfaces of the core portion 11A, but the porous portion 11B may be provided on only one main surface of the core portion 11A.

[0019] The cathode layer 12 includes, for example, a solid electrolyte layer provided on the surface of the dielectric layer 13. It is preferable that the cathode layer 12 further includes a conductor layer provided on the surface of the solid electrolyte layer. When the cathode layer 12 includes a solid electrolyte layer, the capacitor unit 10 constitutes a solid electrolytic capacitor.

[0020] Sealing layer 20 may be provided so as to cover either one of the main surfaces of capacitor section 10 (top or bottom surface in FIG. 1 ), but is preferably provided so as to cover both main surfaces of capacitor section 10 (top and bottom surfaces in FIG. 1 ) as shown in FIG. 1. Capacitor section 10 is protected by sealing layer 20.

[0021] The sealing layer 20 may be composed of only one layer or two or more layers. When the sealing layer 20 is composed of two or more layers, the materials constituting the respective layers may be the same or different.

[0022] The sealing layer 20 is formed so as to seal the capacitor portion 10 by, for example, a method of thermocompressing an insulating resin sheet, or a method of applying an insulating resin paste and then thermally curing it.

[0023] The conductor wiring layer 30 may be provided on either main surface of the sealing layer 20 (the top or bottom surface in FIG. 1 ), but is preferably provided on both main surfaces of the sealing layer 20 (the top and bottom surfaces in FIG. 1 ) as shown in FIG. 1 .

[0024] The conductor wiring layer 30 includes, for example, a cathode conductor wiring layer 30A electrically connected to the cathode layer 12 and an anode conductor wiring layer 30B electrically connected to the anode plate 11 .

[0025] The through conductor 40 is connected at its end to the conductor wiring layer 30 provided on the surface of the sealing layer 20 .

[0026] The through conductor 40 is preferably present within the cathode layer 12 when viewed in a plan view from the thickness direction.

[0027] The through conductor 40 may be provided at least on the inner wall surface of the through hole that penetrates the capacitor portion 10 and the sealing layer 20 in the thickness direction. That is, the through conductor 40 may be provided only on the inner wall surface of the through hole, or may be provided throughout the entire interior of the through hole.

[0028] The through conductors 40 include, for example, a cathode through conductor 40A electrically connected to the cathode layer 12 and an anode through conductor 40B electrically connected to the anode plate 11 .

[0029] The cathode through conductor 40A is electrically connected to the cathode conductor wiring layer 30A. In the example shown in Fig. 1, the cathode conductor wiring layer 30A is electrically connected to the cathode layer 12 through a via conductor 35 that penetrates the sealing layer 20. As a result, the cathode conductor wiring layer 30A functions as a connection terminal for the cathode layer 12.

[0030] In the example shown in FIG. 2, the cathode conductor wiring layer 30A is provided so as to be common to the plurality of cathode through conductors 40A, but the cathode conductor wiring layer 30A may be provided for each of the cathode through conductors 40A.

[0031] As shown in FIG. 3, when viewed in the thickness direction, the cathode through conductor 40A is preferably provided around the entire periphery of a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.

[0032] A first resin filling portion 45A filled with a resin material may be provided inside the cathode through conductor 40A. In this case, the first resin filling portion 45A is provided in a space surrounded by the cathode through conductor 40A in a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction. When the space in the through hole is eliminated by providing the first resin filling portion 45A, delamination of the cathode through conductor 40A is suppressed. Note that the first resin filling portion 45A may be a conductor or an insulator.

[0033] As shown in FIG. 1, it is preferable that an insulating material such as sealing layer 20 is filled between the through-hole that penetrates capacitor section 10 and sealing layer 20 in the thickness direction and cathode through conductor 40A.

[0034] The anode through conductor 40B is electrically connected to the anode conductor wiring layer 30B. In the example shown in Fig. 1, the anode conductor wiring layer 30B is electrically connected to the anode plate 11 via the anode through conductor 40B. As a result, the anode conductor wiring layer 30B functions as a connection terminal for the anode plate 11.

[0035] In the example shown in FIG. 2, an anode conductor wiring layer 30B is provided for each anode through conductor 40B, but the anode conductor wiring layer 30B may be provided in common for a plurality of anode through conductors 40B.

[0036] As shown in FIG. 3, when viewed in the thickness direction, the anode through conductor 40B is preferably provided around the entire periphery of a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.

[0037] A second resin filling portion 45B filled with a resin material may be provided inside the anode through conductor 40B. In this case, the second resin filling portion 45B is provided in a space surrounded by the anode through conductor 40B in a through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction. When the space in the through hole is eliminated by providing the second resin filling portion 45B, delamination of the anode through conductor 40B is suppressed. The second resin filling portion 45B may be a conductor or an insulator.

[0038] 1 , the anode through conductor 40B is preferably electrically connected to the anode plate 11 at the inner wall surface of a through hole that penetrates the capacitor unit 10 and the sealing layer 20 in the thickness direction. More specifically, the anode through conductor 40B is preferably electrically connected to the end surface of the anode plate 11 that faces the inner wall surface of the through hole in the surface direction. In this case, no insulating material such as the sealing layer 20 is filled between the through hole that penetrates the capacitor unit 10 and the sealing layer 20 in the thickness direction and the anode through conductor 40B.

[0039] 1, the core portion 11A and the porous portion 11B are preferably exposed on the end surface of the anode plate 11 electrically connected to the anode penetrating conductor 40B. In this case, the porous portion 11B as well as the core portion 11A are electrically connected to the anode penetrating conductor 40B.

[0040] When viewed in the thickness direction, the anode through conductor 40B is preferably electrically connected to the anode plate 11 along the entire periphery of the through hole that penetrates the capacitor section 10 and the sealing layer 20 in the thickness direction.

[0041] The anode through conductor 40B may be electrically connected via an anode connection layer, or may be directly connected to the end surface of the anode plate 11.

[0042] As shown in FIG. 2 , when the conductor wiring layer 30 provided on the first main surface 20 a (e.g., the upper surface) of the sealing layer 20 is viewed in a planar view in the thickness direction, the capacitor element 1 has a first feature that the total area of ​​the portion of the conductor wiring layer 30 on the first main surface 20 a that overlaps with the region surrounded by the outer peripheral edge of the anode plate 11 is 60% or more of the area of ​​the region surrounded by the outer peripheral edge of the anode plate 11.

[0043] The first feature is that by making the total area of ​​the conductor wiring layer 30 provided on one main surface of the sealing layer 20 60% or more of the area of ​​the region surrounded by the outer edge of the anode plate 11, the volume of the conductor wiring layer 30 in the capacitor element 1 is sufficiently secured, thereby reducing current loss.

[0044] Note that the "region surrounded by the outer periphery of the anode plate 11" does not refer to the region of the anode plate 11 itself, but rather to the entire region surrounded by the outer periphery of the anode plate 11 as shown in Fig. 4. The area of ​​the conductor wiring layer 30 includes the area of ​​the cathode conductor wiring layer 30A and the area of ​​the anode conductor wiring layer 30B.

[0045] When the conductor wiring layer 30 provided on the first main surface 20a (e.g., the upper surface) of the sealing layer 20 is viewed in a plane from the thickness direction, the total area of ​​the portion of the conductor wiring layer 30 on the first main surface 20a that overlaps with the region surrounded by the outer peripheral edge of the anode plate 11 is not particularly limited as long as it is less than 100% of the area of ​​the region surrounded by the outer peripheral edge of the anode plate 11.

[0046] Furthermore, in the capacitor element 1, when viewed in a plan view from the thickness direction, when a virtual circle 50 (see FIG. 5 ) is placed on the conductor wiring layer 30 provided on the first main surface 20 a (e.g., the upper surface) of the sealing layer 20 such that the area ratio of the conductor wiring layer 30 within the circle is 100%, the maximum radius R of the virtual circle 50 is ｍａｘis the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ The second feature is that the value is 45% or less of the above.

[0047] FIG. 5 shows the maximum radius R that the virtual circle can have. ｍａｘ FIG.

[0048] 5, a virtual circle 50 is placed at an arbitrary position on the conductor wiring layer 30 so that the area ratio of the conductor wiring layer 30 within the circle is 100%. The radius of the virtual circle 50 is gradually increased until the maximum radius R that the virtual circle 50 can take is reached. ｍａｘ Ask for.

[0049] FIG. 6 shows the minimum distance D between the centers of the through conductors. ｍｉｎ FIG.

[0050] As shown in FIG. 6, the minimum center-to-center distance D between the plurality of through conductors 40 is ｍｉｎ In the example shown in FIG. 6, the minimum value D ｍｉｎ is the minimum value of the center-to-center distance between the anode through conductors 40B. ｍｉｎ Depending on the arrangement of the through conductors 40, it may be the minimum value of the center-to-center distance between the cathode through conductors 40A, or the minimum value of the center-to-center distance between the cathode through conductor 40A and the anode through conductor 40B.

[0051] 6, the minimum distance D between the centers of the through conductors 40 is shown using a plan view similar to that of FIG. ｍｉｎ However, in reality, the minimum value D between the centers of the through conductors 40 is calculated using a plan view similar to that shown in FIG. 3 in which the conductor wiring layer 30 has been removed by polishing or other processing. ｍｉｎ It is preferable to obtain

[0052] In the second feature, the maximum radius R that the virtual circle 50 can take is ｍａｘ The minimum distance D between the centers of the through conductors 40 ｍｉｎ By setting the thickness to 45% or less, the area of ​​the portion of the capacitor element 1 where the conductor wiring layer 30 is provided in a solid state is reduced, thereby making it possible to suppress delamination.

[0053] When a virtual circle 50 is placed on the conductor wiring layer 30 provided on the first main surface 20 a (e.g., the upper surface) of the sealing layer 20 in a plan view from the thickness direction, such that the area ratio of the conductor wiring layer 30 within the circle is 100%, the maximum radius R of the virtual circle 50 is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ If it is larger than (i.e., the minimum value D ｍｉｎ For example, the maximum radius R that the virtual circle 50 can have is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ It may be 2% or more and 45% or less of the above.

[0054] In this specification, the center of a through conductor refers to the center of the smallest circle that contains the through conductor when viewed from above in the thickness direction. Therefore, the center-to-center distance between through conductors refers to the length of the line segment connecting the centers of the through conductors, which is determined by the above method. The same applies to the center-to-center distance between cathode through conductors, the center-to-center distance between anode through conductors, and the center-to-center distance between a cathode through conductor and an anode through conductor.

[0055] As described above, in the capacitor element 1, the first and second features make it possible to reduce current loss and suppress delamination at the same time.

[0056] In the capacitor element 1, when the conductor wiring layer 30 provided on the second main surface 20b (e.g., the lower surface) of the sealing layer 20 is viewed in plan view in the thickness direction, the total area of ​​the portions of the conductor wiring layer 30 on the second main surface 20b that overlap with the region surrounded by the outer peripheral edge of the anode plate 11 is preferably 60% or more of the area of ​​the region surrounded by the outer peripheral edge of the anode plate 11. In this case, the proportions of the total area of ​​the portions of the conductor wiring layer 30 that overlap with the region surrounded by the outer peripheral edge of the anode plate 11 on one main surface and the other main surface of the sealing layer 20 may be the same or different.

[0057] When the conductor wiring layer 30 provided on the second main surface 20b (e.g., the lower surface) of the sealing layer 20 is viewed in a plane from the thickness direction, the total area of ​​the portion of the conductor wiring layer 30 on the second main surface 20b that overlaps with the region surrounded by the outer peripheral edge of the anode plate 11 is not particularly limited as long as it is less than 100% of the area of ​​the region surrounded by the outer peripheral edge of the anode plate 11.

[0058] Furthermore, when a virtual circle is placed on the conductor wiring layer 30 provided on the second main surface 20b (e.g., the lower surface) of the sealing layer 20 in a plan view from the thickness direction, such that the area ratio of the conductor wiring layer 30 within the circle is 100%, the maximum radius R of the virtual circle is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ In this case, the ratio of the maximum radius that the imaginary circle can take may be the same or different between one main surface and the other main surface of sealing layer 20.

[0059] When a virtual circle is placed on the conductor wiring layer 30 provided on the second main surface 20b (e.g., the lower surface) of the sealing layer 20 in a plan view from the thickness direction, such that the area ratio of the conductor wiring layer 30 within the circle is 100%, the maximum radius R that the virtual circle can have is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ If it is larger than (i.e., the minimum value D ｍｉｎ For example, the maximum radius R that the virtual circle can take is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ It may be 2% or more and 45% or less of the above.

[0060] In the capacitor element of the present invention, it is possible to obtain a plurality of capacitances from one capacitor element, and one capacitor element can also be used as one capacitance section.

[0061] 7A is a plan view schematically illustrating an example of the ratio of the total area of ​​the conductor wiring layer to the region surrounded by the outer periphery of the anode plate, and FIGS. 7B to 7E are plan views schematically illustrating other examples of the ratio of the total area of ​​the conductor wiring layer to the region surrounded by the outer periphery of the anode plate.

[0062] The capacitor element 1A shown in Fig. 7A has the same configuration as the capacitor element 1 shown in Fig. 1 to Fig. 4. The capacitor element 1B shown in Fig. 7B, the capacitor element 1C shown in Fig. 7C, the capacitor element 1D shown in Fig. 7D, and the capacitor element 1E shown in Fig. 7E have a common configuration with the capacitor element 1A shown in Fig. 7A, except that the arrangement of the conductor wiring layer 30 is different. The same applies to Figs. 8A to 8E described below.

[0063] In capacitor element 1A shown in FIG. 7A, capacitor element 1B shown in FIG. 7B, capacitor element 1C shown in FIG. 7C, capacitor element 1D shown in FIG. 7D, and capacitor element 1E shown in FIG. 7E, the total area of ​​the portion of conductor wiring layer 30 overlapping with the region surrounded by the outer peripheral edge of anode plate 11 is 60% or more of the area of ​​the region surrounded by the outer peripheral edge of anode plate 11.

[0064] Specifically, it is 87% in FIG. 7A, 75% in FIG. 7B, 77% in FIG. 7C, 81% in FIG. 7D, and 70% in FIG. 7E.

[0065] Fig. 8A is a plan view schematically showing an example of the ratio of the maximum radius that a virtual circle can have, and Figs. 8B to 8E are plan views schematically showing other examples of the ratio of the maximum radius that a virtual circle can have.

[0066] In the capacitor element 1A shown in FIG. 8A, the capacitor element 1B shown in FIG. 8B, the capacitor element 1C shown in FIG. 8C, the capacitor element 1D shown in FIG. 8D, and the capacitor element 1E shown in FIG. 8E, the maximum radius R that the imaginary circle 50 can take is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors 40 ｍｉｎ (See FIG. 8A) is 45% or less.

[0067] As described above, in the examples shown in FIGS. 7A to 7E and 8A to 8E, capacitor elements 1A to 1E are all examples within the scope of the present invention.

[0068] In the capacitor element of the present invention, the conductor wiring layer provided on the first main surface of the sealing layer preferably includes a plurality of wiring portions, and similarly, the conductor wiring layer provided on the second main surface of the sealing layer preferably includes a plurality of wiring portions.

[0069] In the capacitor element of the present invention, the conductor wiring layer provided on the first main surface of the sealing layer may include two or more first wiring portions having the same first planar shape, and in this case, it is preferable that at least three first wiring portions are arranged at equal intervals in a plan view from the thickness direction.

[0070] For example, in a capacitor element 1A shown in FIG. 7A, the conductor wiring layer 30 includes two or more first wiring portions 61 each having a circular planar shape.

[0071] In the example shown in FIG. 7A, at least three first wiring portions 61 are arranged at equal intervals in a plan view in the thickness direction.

[0072] Similarly, in the capacitor element of the present invention, the conductor wiring layer provided on the second main surface of the sealing layer may include two or more first wiring portions having the same first planar shape. In this case, it is preferable that at least three first wiring portions are arranged at equal intervals in a plan view from the thickness direction. Note that the first planar shapes may be the same or different on one main surface and the other main surface of the sealing layer.

[0073] In the capacitor element of the present invention, the conductor wiring layer provided on the first main surface of the sealing layer may include a first wiring portion having a first planar shape and a second wiring portion having a second planar shape different from the first planar shape.

[0074] The first main surface of the sealing layer may be provided with two or more first wiring portions having the same first planar shape and two or more second wiring portions having the same second planar shape. In this case, it is preferable that, in a plan view from the thickness direction, the spacing between the first wiring portion and the second wiring portion in at least three pairs of the first wiring portion and the second wiring portion is equal between each pair and that the spacing between adjacent pairs is also equal.

[0075] Furthermore, when two or more first wiring portions and two or more second wiring portions are provided on the first main surface of the sealing layer, it is preferable that, when viewed in a plane from the thickness direction, at least three first wiring portions are arranged at equal intervals, and at least three second wiring portions are arranged at equal intervals.

[0076] For example, in a capacitor element 1B shown in Fig. 7B , the conductor wiring layer 30 includes a first wiring portion 61 having a circular planar shape and a second wiring portion 62 having a substantially pentagonal planar shape. As shown in Fig. 7B , the conductor wiring layer 30 also includes wiring portions 60 other than the first wiring portion 61 and the second wiring portion 62. The planar shape of the wiring portion 60 may be one type or two or more types.

[0077] 7B , there are provided two or more first wiring portions 61 and two or more second wiring portions 62. In a plan view from the thickness direction, at least three first wiring portions 61 are arranged at equal intervals, and at least three second wiring portions 62 are arranged at equal intervals.

[0078] Furthermore, in the example shown in Figure 7B, when viewed in a plane from the thickness direction, at least three pairs of first wiring portions 61 and second wiring portions 62 have the same spacing between the first wiring portions 61 and the second wiring portions 62 in each pair, and the spacing between adjacent pairs is also equal.

[0079] Similarly, in the capacitor element of the present invention, the conductor wiring layer provided on the second main surface of the encapsulating layer may include a first wiring portion having a first planar shape and a second wiring portion having a second planar shape different from the first planar shape. Note that the first planar shape may be the same or different between one main surface and the other main surface of the encapsulating layer. Also, the second planar shape may be the same or different between one main surface and the other main surface of the encapsulating layer.

[0080] The second main surface of the sealing layer may be provided with two or more first wiring portions having the same first planar shape and two or more second wiring portions having the same second planar shape. In this case, it is preferable that, in a plan view from the thickness direction, the spacing between the first wiring portion and the second wiring portion in at least three pairs of the first wiring portion and the second wiring portion is equal between each pair and that the spacing between adjacent pairs is also equal.

[0081] Furthermore, when two or more first wiring portions and two or more second wiring portions are provided on the second main surface of the sealing layer, it is preferable that, when viewed in a plane from the thickness direction, at least three first wiring portions are arranged at equal intervals, and at least three second wiring portions are arranged at equal intervals.

[0082] As described above, in the capacitor element of the present invention, the conductor wiring layers provided on the first or second main surface of the sealing layer may be arranged regularly in at least a part of the region. Note that the arrangement of the conductor wiring layers on one main surface of the sealing layer and the other main surface of the sealing layer may be the same or different.

[0083] Alternatively, in the capacitor element of the present invention, the shape of the conductor wiring layer provided on the first or second main surface of the sealing layer may be regular in at least a part of the region, and the shapes of the conductor wiring layer on one main surface and the other main surface of the sealing layer may be the same or different.

[0084] In the capacitor element of the present invention, when the conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, the maximum value of the distance between two points on the outline of the wiring portions in a plan view from the thickness direction is 15×D ｍｉｎ 7A to 7E, the maximum value of the distance between two points on the contour of the wiring portion is L1 ｍａｘ On the other hand, the maximum distance between two points on the contour of the wiring portion is, for example, 0.5×D ｍｉｎ That's all.

[0085] Similarly, in the capacitor element of the present invention, when the conductor wiring layer provided on the second main surface of the sealing layer includes a plurality of wiring portions, the maximum value of the distance between two points on the outline of the wiring portions in a plan view from the thickness direction is 15×D ｍｉｎ On the other hand, the maximum distance between two points on the contour of the wiring portion is preferably 0.5×D ｍｉｎ In this case, the maximum value of the distance between two points on the contour line of the wiring portion on one main surface of the sealing layer 20 and the other main surface of the sealing layer 20 may be the same or different.

[0086] In the capacitor element of the present invention, when the conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, the maximum value of the length of the outline of the wiring portion in a plan view from the thickness direction is 60×D ｍｉｎ 7B to 7E, the maximum length of the contour line of the wiring portion is set to L2 ｍａｘ On the other hand, the maximum length of the contour of the wiring portion is, for example, 2×D ｍｉｎ That's all.

[0087] Similarly, in the capacitor element of the present invention, when the conductor wiring layer provided on the second main surface of the sealing layer includes a plurality of wiring portions, the maximum value of the length of the outline of the wiring portion in a plan view from the thickness direction is 60×D ｍｉｎ On the other hand, the maximum length of the contour line of the wiring portion is preferably 2×D ｍｉｎ In this case, the maximum length of the contour line of the wiring portion on one main surface of the sealing layer 20 may be the same as or different from that on the other main surface.

[0088] In the capacitor element of the present invention, when the cathode through conductor includes a first cathode through conductor and the anode through conductor includes a first anode through conductor and a second anode through conductor, it is preferable that the center-to-center distance between the first cathode through conductor and the first anode through conductor is equal to the center-to-center distance between the first cathode through conductor and the second anode through conductor in a planar view in the thickness direction.

[0089] In this case, it is preferable that the cathode through conductor further includes a second cathode through conductor, and that the center-to-center distance between the first cathode through conductor and the first anode through conductor is equal to the center-to-center distance between the second cathode through conductor and the first anode through conductor when viewed in a plane in the thickness direction.

[0090] Alternatively, in the capacitor element of the present invention, when the cathode through conductor includes a first cathode through conductor and a second cathode through conductor and the anode through conductor includes a first anode through conductor, it is preferable that the center-to-center distance between the first anode through conductor and the first cathode through conductor is equal to the center-to-center distance between the first anode through conductor and the second cathode through conductor in a planar view in the thickness direction.

[0091] In this case, it is preferable that the anode penetrating conductor further includes a second anode penetrating conductor, and that the center-to-center distance between the first anode penetrating conductor and the first cathode penetrating conductor is equal to the center-to-center distance between the second anode penetrating conductor and the first cathode penetrating conductor when viewed in a plane in the thickness direction.

[0092] As described above, by making the center-to-center distances between the cathode through conductors and the anode through conductors uniform, it is possible to reduce the impedance difference between the current paths, and also to disperse heat generated by the capacitor elements and increase the current capacity.

[0093] For example, in the example shown in Figures 2 and 3, the cathode through-conductors 40A and the anode through-conductors 40B are arranged in a hexagonal pattern as a whole. In the hexagonal pattern, the cathode through-conductors 40A or the anode through-conductors 40B are arranged at each vertex of a regular hexagon and at the center of the regular hexagon. In the example shown in Figures 2 and 3, the cathode through-conductors 40A and the anode through-conductors 40B are arranged alternately from left to right. Note that when the cathode through-conductors 40A and the anode through-conductors 40B are arranged in a hexagonal pattern as a whole, the arrangement of the cathode through-conductors 40A and the anode through-conductors 40B is not particularly limited, and for example, the cathode through-conductors 40A and the anode through-conductors 40B may be arranged alternately two by two from left to right.

[0094] Unlike the arrangements shown in Figures 2 and 3, the cathode through-conductors 40A and the anode through-conductors 40B may be arranged in a square configuration as a whole. In a square configuration, the cathode through-conductors 40A or the anode through-conductors 40B are arranged at each vertex of a square. For example, the cathode through-conductors 40A and the anode through-conductors 40B are arranged alternately from top to bottom, and the cathode through-conductors 40A and the anode through-conductors 40B are arranged alternately from left to right. Note that when the cathode through-conductors 40A and the anode through-conductors 40B are arranged in a square configuration as a whole, the arrangement of the cathode through-conductors 40A and the anode through-conductors 40B is not particularly limited. For example, the cathode through-conductors 40A and the anode through-conductors 40B may be arranged alternately in pairs from top to bottom, and the cathode through-conductors 40A and the anode through-conductors 40B may be arranged alternately in pairs from left to right.

[0095] The detailed configuration of the capacitor element 1 and the like will be described below.

[0096] Examples of the planar shape of the capacitor section 10 when viewed from the thickness direction include a rectangle (square or oblong), a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, a combination of these, etc. The planar shape of the capacitor section 10 may also be an L-shape, a C-shape, a stepped shape, etc.

[0097] The anode plate 11 is preferably made of a valve metal that exhibits so-called valve action. Examples of the valve metal include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these metals. Among these, aluminum or an aluminum alloy is preferred.

[0098] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, the term "plate-like" includes "foil-like".

[0099] The anode plate 11 may have the porous portion 11B on at least one main surface of the core portion 11A. That is, the anode plate 11 may have the porous portion 11B on only one main surface of the core portion 11A, or may have the porous portion 11B on both main surfaces of the core portion 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etched layer.

[0100] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the unetched core portion 11A after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed according to the required withstand voltage and electrostatic capacitance, but the combined thickness of the porous portions 11B on both sides of the core portion 11A is preferably 10 μm or more and 180 μm or less.

[0101] The pore diameter of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore diameter of the porous portion 11B refers to the median diameter D50 measured with a mercury porosimeter. The pore diameter of the porous portion 11B can be controlled, for example, by adjusting various etching conditions.

[0102] The dielectric layer 13 provided on the surface of the porous portion 11B is porous, reflecting the surface condition of the porous portion 11B, and has a finely uneven surface shape. The dielectric layer 13 is preferably made of an oxide film of the valve metal. For example, when aluminum foil is used as the anode plate 11, the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).

[0103] The thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.

[0104] When the cathode layer 12 includes a solid electrolyte layer, examples of materials constituting the solid electrolyte layer include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred. The conductive polymer may also contain a dopant such as polystyrene sulfonate (PSS). The solid electrolyte layer preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0105] The thickness of the solid electrolyte layer from the surface of the porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0106] The solid electrolyte layer is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion liquid of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.

[0107] The solid electrolyte layer can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.

[0108] When the cathode layer 12 includes a conductor layer, the conductor layer includes at least one layer selected from a conductive resin layer and a metal layer. The conductor layer may be a conductive resin layer alone or a metal layer alone. The conductor layer preferably covers the entire surface of the solid electrolyte layer.

[0109] The conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler.

[0110] Examples of the metal layer include a metal plating film and a metal foil. The metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as the main component. The term "main component" refers to the elemental component with the largest weight ratio.

[0111] The conductive layer includes, for example, a carbon layer provided on the surface of the solid electrolyte layer and a copper layer provided on the surface of the carbon layer.

[0112] The carbon layer is provided to electrically and mechanically connect the solid electrolyte layer and the copper layer. The carbon layer can be formed in a predetermined area by applying a carbon paste to the surface of the solid electrolyte layer by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing. The carbon layer is preferably laminated with the copper layer in the subsequent step while the carbon layer is still in a viscous state before drying. The thickness of the carbon layer is preferably 2 μm or more and 20 μm or less.

[0113] The copper layer can be formed in a predetermined region by applying a copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper layer is preferably 2 μm or more and 20 μm or less.

[0114] The sealing layer 20 is made of an insulating material. In this case, the sealing layer 20 preferably contains an insulating resin.

[0115] Examples of the insulating resin contained in the sealing layer 20 include epoxy resin and phenol resin.

[0116] Preferably, the sealing layer 20 further contains a filler.

[0117] Examples of the filler contained in the sealing layer 20 include inorganic fillers such as silica particles and alumina particles.

[0118] Between the capacitor section 10 and the sealing layer 20, for example, a stress relaxation layer, a moisture-proof film, or the like may be provided.

[0119] Examples of materials constituting the conductor wiring layer 30 include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the conductor wiring layer 30 is formed by, for example, plating the surface of the through conductor 40.

[0120] In order to improve the adhesion between the conductor wiring layer 30 and other components, in this case, the adhesion between the conductor wiring layer 30 and the through conductor 40, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and a resin may be used as the constituent material of the conductor wiring layer 30.

[0121] The cathode conductor wiring layer 30A and the anode conductor wiring layer 30B are preferably made of the same material at least in terms of type, but may be made of different materials.

[0122] Examples of materials that can be used to form the via conductors 35 include metal materials containing low-resistance metals such as silver, gold, and copper.

[0123] The via conductor 35 is formed, for example, by plating the inner wall surface of a through hole that penetrates the sealing layer 20 in the thickness direction with the above-mentioned metal material, or by filling it with a conductive paste and then performing a heat treatment.

[0124] Of the through conductors 40, the cathode through conductor 40A is formed, for example, as follows. First, a first through hole penetrating the capacitor unit 10 in the thickness direction is formed by drilling, laser processing, or other processing. Next, an insulating material such as the sealing layer 20 is filled into the first through hole. A second through hole is formed by drilling, laser processing, or other processing on the portion filled with the insulating material. At this time, the diameter of the second through hole is made smaller than the diameter of the first through hole filled with the insulating material, thereby creating a state in which the insulating material is present between the inner wall surfaces of the first through hole and the second through hole in the planar direction. Then, the inner wall surface of the second through hole is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the cathode through conductor 40A. When forming the cathode through conductor 40A, for example, metallizing the inner wall surface of the second through hole by a process such as electroless copper plating or electrolytic copper plating facilitates processing. As for the method of forming the cathode through conductor 40A, in addition to the method of metallizing the inner wall surface of the second through hole, a method of filling the second through hole with a metal material, a composite material of metal and resin, etc. may also be used.

[0125] Of the through conductors 40, the anode through conductors 40B are formed, for example, as follows. First, a third through hole penetrating the capacitor unit 10 and the sealing layer 20 in the thickness direction is formed by processing such as drilling or laser processing. Then, the inner wall surface of the third through hole is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the anode through conductors 40B. When forming the anode through conductors 40B, for example, metallizing the inner wall surface of the third through hole by processing such as electroless copper plating or electrolytic copper plating facilitates processing. Note that the anode through conductors 40B may be formed by filling the third through hole with a metal material, a composite material of metal and resin, or the like, in addition to metallizing the inner wall surface of the third through hole.

[0126] When the anode plate 11 and the anode penetrating conductor 40B are electrically connected via the anode connection layer, the anode connection layer is provided between the anode plate 11 and the anode penetrating conductor 40B in the surface direction, so that the anode connection layer functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B. When the anode connection layer functions as a barrier layer for the anode plate 11, dissolution of the anode plate 11 that occurs during chemical treatment to form the conductor wiring layer 30 is suppressed, and therefore penetration of the chemical solution into the capacitor portion 10 is suppressed, which tends to improve reliability.

[0127] The anode connecting layer preferably includes a layer containing nickel as a main component, which reduces damage to the metal (e.g., aluminum) constituting the anode plate 11, and therefore improves the barrier properties of the anode connecting layer against the anode plate 11.

[0128] Although not shown in FIG. 1 , the capacitor section 10 may further include an insulating mask layer provided around the through conductor 40 on at least one main surface of the anode plate 11 .

[0129] 1, the capacitor section 10 may further include an insulating mask layer provided on at least one main surface of the anode plate 11 so as to surround the periphery of the cathode layer 12. By surrounding the periphery of the cathode layer 12 with the insulating mask layer, insulation between the anode plate 11 and the cathode layer 12 is ensured, and a short circuit between them is prevented.

[0130] The insulating mask layer is made of an insulating material, and in this case, the insulating mask layer preferably contains an insulating resin.

[0131] Examples of insulating resins contained in the insulating mask layer include polyphenylsulfone resin, polyethersulfone resin, cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.

[0132] The insulating mask layer may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating mask layer contains an inorganic filler, it may adversely affect the effective capacitance portion of the capacitor section 10. Therefore, it is preferable that the insulating mask layer be made of a resin alone.

[0133] The insulating mask layer can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.

[0134] The insulating mask layer may be formed on the porous portion 11B either before or after the dielectric layer 13 is formed.

[0135] The capacitor element of the present invention is not limited to the above-described embodiment, and various applications and modifications can be made within the scope of the present invention with respect to the configuration of the capacitor element, the manufacturing conditions of the capacitor element, and the like.

[0136] Furthermore, the technology using the through conductor in the capacitor element of the present invention is not limited to the electrolytic capacitors described above, but can also be applied to other capacitor parts. For example, in a multilayer ceramic capacitor having first and second electrodes, the effects of the present invention can be achieved even in a capacitor part having a configuration in which the first electrode and the second electrode face each other in the thickness direction.

[0137] The capacitor element of the present invention can be suitably used as a constituent material of a composite electronic component. Such a composite electronic component includes, for example, the capacitor element of the present invention, external electrodes (e.g., conductor wiring layers) provided outside the sealing layer of the capacitor element and electrically connected to the anode plate and cathode layer of the capacitor element, respectively, and an electronic component connected to the external electrodes.

[0138] In a composite electronic component, the electronic component connected to the external electrode may be a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. Also, a composite of a passive element and an active element may be connected to the external electrode.

[0139] Examples of passive elements include inductors, etc. Examples of active elements include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0140] The capacitor element of the present invention has a sheet-like shape as a whole. Therefore, in a composite electronic component, the capacitor element can be treated like a mounting substrate, and electronic components can be mounted on the capacitor element. Furthermore, by making the electronic components mounted on the capacitor element sheet-like, it is also possible to connect the capacitor element and the electronic components in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, active elements and passive elements can be configured like a single module.

[0141] For example, a switching regulator can be formed by electrically connecting the capacitor element of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0142] In a composite electronic component, a circuit layer may be formed on either side of a capacitor matrix sheet on which a plurality of capacitor elements of the present invention are laid out, and the circuit layer may be connected to a passive element or an active element.

[0143] Alternatively, the capacitor element of the present invention may be placed in a cavity provided in a substrate, embedded in resin, and then a circuit layer may be formed on the resin. Another electronic component (a passive element or an active element) may be mounted in another cavity of the same substrate.

[0144] Alternatively, the capacitor element of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and then the capacitor element may be connected to a passive or active element.

[0145] The capacitor element of the present invention may be used as a constituent material of a capacitor array including a plurality of capacitor elements. In the capacitor array, all of the capacitor elements may be the capacitor element of the present invention, but it is sufficient that at least one of the capacitor elements is the capacitor element of the present invention. Such a capacitor array also constitutes the present invention.

[0146] That is, the capacitor array of the present invention includes a plurality of capacitor elements, at least one of which is the capacitor element of the present invention.

[0147] FIG. 9 is a plan view schematically showing an example of a capacitor array including the capacitor element of the present invention.

[0148] The capacitor array 100 shown in Fig. 9 includes a plurality of capacitor elements 2A, 2B, 2C, and 2D. In the example shown in Fig. 9, the capacitor array 100 includes four capacitor elements, but the number of capacitor elements included in the capacitor array 100 is not particularly limited as long as it is two or more. Furthermore, the size, shape, etc. of the capacitor elements included in the capacitor array 100 may be the same, or some or all of them may be different.

[0149] 9, all of the capacitor elements 2A, 2B, 2C, and 2D may be the capacitor elements of the present invention, but it is sufficient that at least one of the capacitor elements is the capacitor element of the present invention. In other words, the configurations of the capacitor elements included in the capacitor array 100 may be the same, or some or all of them may be different.

[0150] For example, if, in at least one capacitor element among the multiple capacitor elements included in the capacitor array, the total area of ​​the portion where the conductor wiring layer on the first main surface overlaps with the region surrounded by the outer peripheral edge of the anode plate is 60% or more of the area of ​​the region surrounded by the outer peripheral edge of the anode plate, in the remaining capacitor elements, the total area of ​​the portion where the conductor wiring layer on the first main surface overlaps with the region surrounded by the outer peripheral edge of the anode plate may be less than 60% of the area of ​​the region surrounded by the outer peripheral edge of the anode plate.

[0151] The present specification discloses the following:

[0152] <1> A capacitor section including: an anode plate having a porous section on at least one main surface of a core section; a dielectric layer provided on a surface of the porous section; and a cathode layer provided on a surface of the dielectric layer; a sealing layer provided so as to cover at least one of a pair of main surfaces opposing each other in a thickness direction of the capacitor section; a conductor wiring layer provided on at least one of the pair of main surfaces opposing each other in the thickness direction of the sealing layer; and a plurality of through conductors passing through the capacitor section and the sealing layer in the thickness direction, wherein, when the conductor wiring layer provided on a first main surface of the sealing layer is viewed in a plane in the thickness direction, a total area of ​​a portion of the conductor wiring layer on the first main surface overlapping a region surrounded by an outer periphery of the anode plate is 60% or more of an area of ​​the region surrounded by the outer periphery of the anode plate, and when an imaginary circle is placed on the conductor wiring layer provided on the first main surface of the sealing layer such that an area ratio of the conductor wiring layer within the circle is 100% in the planar view in the thickness direction, a maximum radius R of the imaginary circle ｍａｘ is the minimum value D of the center-to-center distance between the through conductors. ｍｉｎ 45% or less of the capacitance of the capacitor element.

[0153] <2> The capacitor element according to <1>, wherein the conductor wiring layer provided on the first main surface of the sealing layer includes two or more first wiring portions having the same first planar shape.

[0154] <3> The capacitor element according to <2>, wherein at least three of the first wiring portions are arranged at equal intervals in a plan view in the thickness direction.

[0155] <4> The capacitor element according to <1>, wherein the conductor wiring layer provided on the first main surface of the sealing layer includes a first wiring portion having a first planar shape and a second wiring portion having a second planar shape different from the first planar shape.

[0156] <5> The capacitor element according to <4>, wherein the first main surface of the sealing layer is provided with two or more first wiring portions having the same first planar shape and two or more second wiring portions having the same second planar shape, and in a planar view from the thickness direction, at least three pairs of the first wiring portions and the second wiring portions have the same spacing between each pair and the same spacing between adjacent pairs.

[0157] <6> The conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, and a maximum value of a distance between two points on a contour line of the wiring portion in a plan view from the thickness direction is 15×D ｍｉｎ The capacitor element according to any one of <1> to <5>, wherein:

[0158] <7> The conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, and a maximum value of a length of a contour line of each of the wiring portions in a plan view in the thickness direction is 60×D ｍｉｎ The capacitor element according to any one of <1> to <6>, wherein:

[0159] <8> The capacitor element according to any one of <1> to <7>, wherein the sealing layer is provided so as to cover both main surfaces of the capacitor portion, the conductor wiring layer is provided on both main surfaces of the sealing layer, and when the conductor wiring layer provided on the second main surface of the sealing layer is viewed in a plane in the thickness direction, a total area of ​​a portion of the conductor wiring layer on the second main surface overlapping a region surrounded by an outer peripheral edge of the anode plate is 60% or more of an area of ​​the region surrounded by the outer peripheral edge of the anode plate.

[0160] <9> When a virtual circle is placed on the conductor wiring layer provided on the second main surface of the sealing layer in a plan view from the thickness direction, such that an area ratio of the conductor wiring layer within the circle is 100%, the maximum value R of the radius that the virtual circle can have is ｍａｘ is the minimum value D of the center-to-center distance between the through conductors. ｍｉｎ The capacitor element according to <8>, wherein the capacitance is 45% or less of the capacitance.

[0161] <10> The capacitor element according to any one of <1> to <9>, wherein the through conductors include a cathode through conductor electrically connected to the cathode layer and an anode through conductor electrically connected to the anode plate.

[0162] <11> The minimum value D of the center-to-center distance between the through conductors ｍｉｎ is the minimum value of the center-to-center distance between the anode through conductors.

[0163] 1, 1A, 1B, 1C, 1D, 1E, 2A, 2B, 2C, 2D Capacitor element 10 Capacitor portion 11 Anode plate 11A Core portion 11B Porous portion 12 Cathode layer 13 Dielectric layer 20 Sealing layer 20a First main surface 20b Second main surface 30 Conductor wiring layer 30A Cathode conductor wiring layer 30B Anode conductor wiring layer 35 Via conductor 40 Through conductor 40A Cathode through conductor 40B Anode through conductor 45A First resin filled portion 45B Second resin filled portion 50 Virtual circle 60 Wiring portion 61 First wiring portion 62 Second wiring portion 100 Capacitor array D ｍｉｎ Minimum distance between centers of through conductors R ｍａｘ The maximum radius that the virtual circle can take: L1 ｍａｘ Maximum distance between two points on the outline of the wiring part L2 ｍａｘ Maximum length of the outline of the wiring section

Claims

1. A capacitor section including an anode plate having a porous section on at least one main surface of a core section, a dielectric layer provided on a surface of the porous section, and a cathode layer provided on the surface of the dielectric layer, a sealing layer provided so as to cover at least one of a pair of main surfaces facing each other in a thickness direction of the capacitor section, a conductor wiring layer provided on at least one of a pair of main surfaces facing each other in the thickness direction of the sealing layer, and a plurality of through conductors penetrating the capacitor section and the sealing layer in the thickness direction, wherein when the conductor wiring layer provided on a first main surface of the sealing layer is viewed in a plane in the thickness direction, a total area of ​​a portion of the conductor wiring layer on the first main surface overlapping a region surrounded by an outer periphery of the anode plate is 60% or more of an area of ​​the region surrounded by the outer periphery of the anode plate, and when a virtual circle is placed on the conductor wiring layer provided on the first main surface of the sealing layer such that the area ratio of the conductor wiring layer within the circle is 100% in the plane view in the thickness direction, a maximum radius R of the virtual circle that can be taken by the virtual circle is 100%. ｍａｘ is the minimum value D of the center-to-center distance between the through conductors ｍｉｎ 45% or less of said capacitor element.

2. The capacitor element according to claim 1, wherein the conductor wiring layer provided on the first main surface of the sealing layer includes two or more first wiring portions having the same first planar shape.

3. The capacitor element according to claim 2, wherein at least three of the first wiring portions are arranged at equal intervals in a plan view from the thickness direction.

4. A capacitor element as described in claim 1, wherein the conductor wiring layer provided on the first main surface of the sealing layer includes a first wiring portion having a first planar shape, and a second wiring portion having a second planar shape different from the first planar shape.

5. A capacitor element as described in claim 4, wherein the first main surface of the sealing layer is provided with two or more first wiring portions having the same first planar shape and two or more second wiring portions having the same second planar shape, and when viewed in a plan view from the thickness direction, at least three pairs of the first wiring portions and the second wiring portions have the same spacing between the first wiring portions and the second wiring portions in each pair, and the spacing between adjacent pairs is also equal.

6. The conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, and the maximum value of the distance between two points on the contour line of the wiring portion in a plan view from the thickness direction is 15×D ｍｉｎ The capacitor element according to any one of claims 1 to 5, wherein:

7. The conductor wiring layer provided on the first main surface of the sealing layer includes a plurality of wiring portions, and the maximum value of the length of the contour line of the wiring portion in a plan view from the thickness direction is 60×D ｍｉｎ The capacitor element according to any one of claims 1 to 6, wherein:

8. A capacitor element as claimed in any one of claims 1 to 7, wherein the sealing layer is provided so as to cover both main surfaces of the capacitor portion, the conductor wiring layer is provided on both main surfaces of the sealing layer, and when the conductor wiring layer provided on the second main surface of the sealing layer is viewed in a plane in the thickness direction, the total area of ​​the portion of the conductor wiring layer on the second main surface overlapping with the region surrounded by the outer peripheral edge of the anode plate is 60% or more of the area of ​​the region surrounded by the outer peripheral edge of the anode plate.

9. When a virtual circle is placed on the conductor wiring layer provided on the second main surface of the sealing layer in a plan view from the thickness direction, the maximum radius R of the virtual circle is 100%. ｍａｘ is the minimum value D of the center-to-center distance between the through conductors ｍｉｎ The capacitor element according to claim 8 , wherein the thickness of the capacitor is 45% or less.

10. A capacitor element according to any one of claims 1 to 9, wherein the through conductor includes a cathode through conductor electrically connected to the cathode layer, and an anode through conductor electrically connected to the anode plate.

11. The minimum center distance D between the through conductors ｍｉｎ The capacitor element according to claim 10 , wherein: n is a minimum value of the center-to-center distance between the anode through conductors.

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