Substrate support assembly, substrate processing apparatus, and substrate processing method

Abstract

Provided is a substrate support assembly. A base of the substrate support assembly has a flow path. A first container is configured to make it possible to change a first capacity inside the first container so that a heat transfer medium is supplied to the flow path via at least one first pipe due to a decrease in the first capacity. A second container is configured to make it possible to change a second capacity inside the second container so that a gas is supplied to the flow path due to a decrease in the second capacity. The first container and the second container are configured such that a decrease in one among the first capacity and the second capacity results in an increase in the other. A heat transfer medium supply unit further includes at least one third pipe and a valve.

Description

Substrate support assembly, substrate processing apparatus, and substrate processing method

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate support assembly, a substrate processing apparatus, and a method for processing a substrate.

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus described in Patent Document 1 below includes a chamber and an adsorption device. The adsorption device adsorbs the substrate. A coolant flow path is formed inside the adsorption device. A coolant is supplied to the coolant flow path through a coolant supply port. The coolant supplied to the coolant flow path is discharged through a coolant discharge port.

[0003] Japanese Patent Application Laid-Open No. 2001-110885

[0004] The present disclosure provides techniques for improving substrate temperature controllability.

[0005] In one exemplary embodiment, a substrate support assembly includes a base, a substrate support on the base, and a heat transfer medium supply. The base has a flow path. The heat transfer medium supply is connected to the flow path. The heat transfer medium supply includes a first container, a first pipe, a second container, and a second pipe. The first container is configured to store a heat transfer medium therein. At least one first pipe is connected between a first end of the flow path and the first container. The second container is configured to store a gas therein. The second pipe is connected between a second end of the flow path and the second container. The first container is configured to change a first volume thereof by reducing a first volume thereof to supply the heat transfer medium to the flow path via the at least one first pipe. The second container is configured to change a second volume thereof by reducing a second volume thereof to supply the gas to the flow path via the at least one second pipe. The first and second vessels are configured such that a decrease in one of the first and second volumes results in an increase in the other. The heat transfer medium supply further includes at least one third line and a valve. The valve is connected between the first and second vessels via the at least one third line.

[0006] According to one exemplary embodiment, improved temperature control of the substrate is achieved.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system; FIG. 2 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus; FIG. 3 is a diagram schematically showing a substrate support assembly according to an exemplary embodiment; FIG. 4 is a cross-sectional view of a partition wall according to an exemplary embodiment; FIG. 5 is a diagram schematically showing a substrate support assembly according to another exemplary embodiment; and FIG. 6 is a flowchart of a substrate processing method according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support assembly 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support assembly 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support assembly 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support assembly 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support assembly 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support assembly 11 includes a main body 5 and a ring assembly 112. The main body 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 5b of the main body 5 surrounds the central region 5a of the main body 5 in a plan view. The substrate W is disposed on the central region 5a of the main body 5, and the ring assembly 112 is disposed on the annular region 5b of the main body 5 so as to surround the substrate W on the central region 5a of the main body 5. Therefore, the central region 5a is also called a substrate support surface for supporting the substrate W, and the annular region 5b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 5 includes a base 50 and a substrate support 51. The substrate support 51 is, for example, an electrostatic chuck. The base 50 includes a conductive member. The conductive member of the base 50 can function as a lower electrode. The substrate support 51 is disposed on the base 50. The substrate support 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed within the ceramic member 51a. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Note that another member surrounding the substrate support 51, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the substrate support 51 and the annular insulating member. At least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32, which will be described later, may be disposed within the ceramic member 51a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 50 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 51b may function as the lower electrode. Therefore, the substrate support assembly 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0018] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0019] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0020] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0021] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0022] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0023] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0024] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0025] 3 is a diagram schematically illustrating a substrate support assembly according to one exemplary embodiment. As described above, the substrate support assembly 11 includes a main body 5. The main body 5 includes a base 50 and a substrate support 51 on the base 50. The substrate support 51 is disposed on the base 50. In one embodiment, the base 50 may be supported on a base material 10c via an insulating member 10b. In the example shown in FIG. 3, the main body 5 is supported by an insulating member 10b within the chamber 10. The insulating member 10b is disposed on the base material 10c. The base material 10c may form a bottom wall of the chamber 10.

[0026] In one embodiment, the substrate support assembly 11 may further include at least one heater 51c. The heater 51c is disposed within the substrate support 51. The heater 51c is disposed, for example, within the ceramic member 51a of the substrate support 51. The heater 51c is located below the electrostatic electrode 51b. The heater 51c generates heat when power is supplied from a power supply (not shown) controlled by the heater controller HC. The substrate support assembly 11 may also include a temperature control module configured to adjust at least one of the substrate support 51, the ring assembly 112, and the substrate W to a target temperature. The substrate support assembly 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 5a.

[0027] The base 50 has a flow path 55 and a flow path 50a. In one embodiment, the flow path 55 is a flow path for at least one heat transfer medium, and the flow path 50a is a flow path for a heat transfer medium other than the at least one heat transfer medium. The flow path 50a and the flow path 55 may be provided within the base 50. The flow path 50a and the flow path 55 may be independent of each other.

[0028] In one embodiment, the at least one heat transfer medium may be a plurality of heat transfer media. The plurality of heat transfer media includes a first heat transfer medium M1 (heat transfer medium) and a second heat transfer medium M2. The first heat transfer medium M1 has a first specific gravity. The second heat transfer medium M2 has a second specific gravity. The second specific gravity is less than the first specific gravity. The first heat transfer medium M1 has a first thermal conductivity. The second heat transfer medium M2 has a second thermal conductivity. The first thermal conductivity may be greater than the second thermal conductivity.

[0029] In one embodiment, the first heat transfer medium M1 may be a liquid metal. The liquid metal may be a metal or eutectic alloy having a melting point of −10°C or less and a thermal conductivity of 5 W / mK or more under normal pressure (atmospheric pressure). The melting point of the liquid metal under normal pressure (atmospheric pressure) may be −15°C or less. The liquid metal may be, for example, a Ga-In-Sn alloy. In the Ga-In-Sn alloy, the Ga concentration may be 62% by mass, the In concentration may be 25% by mass, and the Sn concentration may be 13% by mass. As an example, the Ga-In-Sn alloy may be Galinstan (registered trademark). In one embodiment, the first heat transfer medium M1 may be silicone oil, anhydrous alcohol, ethylene glycol, or a fluorine-based refrigerant liquid. In one example, the first heat transfer medium M1 may be water.

[0030] In one embodiment, the second heat transfer medium M2 may be a liquid other than the liquid metal. The other liquid may be a liquid that does not chemically react with the liquid metal and does not contain water. The other liquid may have a melting point lower than that of the liquid metal. The other liquid may be, for example, silicone oil, anhydrous alcohol, ethylene glycol, or a fluorine-based refrigerant liquid. In one example, the second heat transfer medium M2 may be water. The first heat transfer medium M1 and the second heat transfer medium M2 may be liquids that are incompatible with each other.

[0031] In one embodiment, the base 50 may include a first base 52, a second base 53, and a support member 54. The first base 52 supports a substrate support 51 disposed thereon. The second base 53 is disposed below the first base 52 and has a flow path 50a therein. The support member 54 is interposed between the first base 52 and the second base 53 and supports the first base 52. The support member 54 defines a flow path 55 between the first base 52 and the second base 53. In one example, the flow path 55 extends between the flow path 50a and the substrate support 51.

[0032] In one embodiment, the thermal conductivity of the material of the support member 54 may be lower than the thermal conductivity of the material of the base 50. The thermal conductivity of the material of the support member 54 may be 1 W / mK or less. The support member 54 is made of, for example, at least one material selected from the group consisting of a resin material, a ceramic, and a composite material. The support member 54 may be made of a fluororesin. The support member 54 may be made of at least one material selected from the group consisting of polytetrafluoroethylene, polyether ether ketone, and porous ceramic. The support member 54 may be made of a composite material. A composite material is a material made by combining two or more different materials. For example, a composite material is a material made by combining two or more materials selected from the group consisting of a resin, a metal, a glass, and carbon.

[0033] The heat transfer medium other than the at least one heat transfer medium may be a coolant such as brine or a gas. The substrate support assembly 11 may further include a chiller unit. The chiller unit may be connected to the flow path 50 a to supply another heat transfer medium to the flow path 50 a.

[0034] The substrate support assembly 11 includes a heat transfer medium supply unit 6. The heat transfer medium supply unit 6 is connected to the flow path 55 and is configured to supply a heat transfer medium selected from the plurality of heat transfer media described above to the flow path 55. The temperature adjustment module described above may include the heat transfer medium supply unit 6, the heater 51c, the heater controller HC, the flow path 55, the flow path 50a, a chiller unit, or a combination thereof.

[0035] In one embodiment, the heat transfer medium supply unit 6 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 6 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 6 may also be disposed outside the chamber 10. The heat transfer medium supply unit 6 is insulated from the chamber 10.

[0036] The heat transfer medium supply unit 6 includes at least one first pipe 71, a first container 61, at least one second pipe 72, a second container 62, at least one third pipe 73, and a valve 73a (third valve). In one embodiment, the heat transfer medium supply unit 6 may further include a valve 71a (first valve), a valve 72a (second valve), at least one fourth pipe 74, and a valve 74a (fourth valve).

[0037] At least one first pipe 71 is connected between the first end 55a of the flow path 55 and the first container 61. In one embodiment, the valve 71a is connected between the first end 55a and the first container 61 via the at least one first pipe 71. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of first pipes 71. One of the plurality of first pipes 71 connects the first end 55a and the valve 71a, and another of the plurality of first pipes 71 connects the valve 71a and the first container 61. Note that the first container 61 may be provided below the second container 62, as described below. The position at which another of the plurality of first pipes 71 is connected to the first container 61 may be, for example, the bottom of the first container 61.

[0038] At least one second pipe 72 is connected between the second end 55b of the flow path 55 and the second container 62. The second end 55b is the end of the flow path 55 opposite the first end 55a. In one embodiment, the valve 72a is connected between the second end 55b and the second container 62 via the at least one second pipe 72. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of second pipes 72. One of the plurality of second pipes 72 connects the second end 55b and the valve 72a, and another of the plurality of second pipes 72 connects the valve 72a and the second container 62. Note that the location where another of the plurality of second pipes 72 is connected to the second container 62 may be, for example, the ceiling (or upper wall) of the second container 62.

[0039] At least one third pipe 73 is connected between the first container 61 and the second container 62. The valve 73a is connected between the first container 61 and the second container 62 via the at least one third pipe 73. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of third pipes 73. One of the plurality of third pipes 73 connects the first container 61 to the valve 73a, and another of the plurality of third pipes 73 connects the valve 73a to the second container 62. Note that the position at which one of the plurality of third pipes 73 is connected to the first container 61 is higher than the position at which another of the plurality of first pipes 71 is connected to the first container 61, and may be, for example, the ceiling (or upper wall) of the first container 61. Furthermore, the position at which another one of the multiple third pipes 73 is connected to the second container 62 is lower than the position at which another one of the multiple second pipes 72 is connected to the second container 62, and may be, for example, the bottom of the second container 62.

[0040] At least one fourth pipe 74 is connected between the first end 55a and the first container 61. The at least one fourth pipe 74 may be provided in parallel with the at least one first pipe 71 or may merge with the at least one first pipe 71. The position at which the at least one fourth pipe 74 is connected to the first container 61 is located above the position at which the at least one first pipe 71 is connected to the first container 61. The position at which the at least one fourth pipe 74 is connected to the first container 61 is located below the position at which the at least one third pipe 73 is connected to the first container 61. The valve 74a is connected between the first end 55a and the first container 61 via the at least one fourth pipe 74. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of fourth pipes 74. One of the plurality of fourth pipes 74 connects the first end 55 a and the valve 74 a to each other, and another of the plurality of fourth pipes 74 connects the valve 74 a and the first container 61 to each other. One of the plurality of fourth pipes 74 may merge with at least one of the first pipes 71 between the first end 55 a and the valve 74 a.

[0041] The first container 61 is configured to be able to store the first heat transfer medium M1 therein. In one embodiment, the first container 61 may be configured to be able to further store the second heat transfer medium M2 therein. The first container 61 is configured to be able to change a first volume therein. The first container 61 is configured to supply the first heat transfer medium M1 or the second heat transfer medium M2 to the flow path 55 via at least one first pipe 71 by reducing the first volume therein.

[0042] The second container 62 is configured to be able to store a gas therein. The second container 62 may be configured to be able to further store a second heat transfer medium M2 therein. The second container 62 is configured to be able to change a second volume therein. The second container 62 is configured to supply a gas to the flow path 55 via at least one second pipe 72 by reducing the second volume therein. The gas is, for example, nitrogen or a rare gas. The first container 61 and the second container 62 are configured such that a decrease in one of the first volume and the second volume results in an increase in the other.

[0043] In one embodiment, the first container 61 includes a sidewall. The sidewall of the first container 61 includes a first bellows 61a. The first container 61 is configured so that a first volume can be changed by expanding and contracting the first bellows 61a. The second container 62 also includes a sidewall. The sidewall of the second container 62 includes a second bellows 62a. The second container 62 is configured so that a second volume can be changed by expanding and contracting the second bellows 62a.

[0044] In one embodiment, the first container 61 and the second container 62 are adjacent to each other along the vertical direction D1 and are arranged such that the expansion and contraction directions of the first bellows 61a and the second bellows 62a are aligned along the vertical direction D1. In one example, the first container 61 is arranged below the second container 62, and the second container 62 is arranged above the first container 61. In one embodiment, the first container 61 and the second container 62 include a partition 63 arranged between the first bellows and the second bellows. The partition 63 includes an upper wall of the first container 61 and a bottom wall of the second container 62. In the example shown in FIG. 3 , the first container 61 and the second container 62 are separated by a single partition 63. The partition 63 may define the first container 61 together with the first bellows 61a. The partition 63 may define the second container 62 together with the second bellows 62 a.

[0045] In one embodiment, the partition 63 is configured to be movable in the up-down direction D1. The valve 73a may be configured to move together with the partition 63. At least one third pipe 73 may also be configured to move together with the partition 63. Upward movement of the partition 63 expands the first bellows and contracts the second bellows, thereby increasing the first volume and decreasing the second volume. Downward movement of the partition 63 contracts the first bellows and expands the second bellows, thereby decreasing the first volume and increasing the second volume.

[0046] In one embodiment, at least one of the inner surface of the first container 61, the inner surfaces of the plurality of first pipes 71, and the inner surface of the flow path 55 may be made of resin or ceramic. In this case, embrittlement of each inner surface due to the liquid metal is suppressed. In one embodiment, at least one of the inner surface of the second container 62, the inner surfaces of the plurality of second pipes 72, and the inner surface of at least one third pipe 73 may be made of resin or ceramic. In this case, embrittlement of each inner surface due to the liquid metal is suppressed.

[0047] Since the first container 61 is positioned below the second container 62, when the valve 73a is opened, the first heat transfer medium M1 and the second heat transfer medium M2 stored in the second container 62 are recovered into the first container 61 via at least one third pipe 73.

[0048] In one embodiment, the substrate support assembly 11 may further include a drive mechanism 8. The drive mechanism 8 is configured to move the partition 63 along the vertical direction D1. By moving the partition 63 along the vertical direction D1, the drive mechanism 8 increases one of the first capacitance and the second capacitance and decreases the other.

[0049] In one embodiment, the partition wall 63 may include a peripheral portion 63a that protrudes outward in a direction intersecting the vertical direction D1, i.e., relative to the side wall of the first container 61. The drive mechanism 8 may include an actuator 80 and a joint 81. The actuator 80 may extend and contract along the vertical direction D1 like an air cylinder or a hydraulic cylinder. In one example, the actuator 80 is an air cylinder. The joint 81 connects the peripheral portion 63a and the actuator 80.

[0050] In one embodiment, the actuator 80 may be disposed below the substrate 10c. That is, the actuator 80 may be disposed outside the chamber 10. In the example shown in Fig. 3, the actuator 80 is fixed to the lower surface of the substrate 10c via a connecting member 10d.

[0051] FIG. 4 is a cross-sectional view of a partition wall according to one exemplary embodiment. The joint 81 may include a plurality of shafts 81a. The plurality of shafts 81a are connected to the peripheral portion 63a. In the example shown in FIG. 4, the number of the plurality of shafts 81a is four. The plurality of shafts 81a are arranged at equal intervals along the circumferential direction. The base material 10c has a plurality of through-holes 10h. The plurality of shafts 81a pass through the plurality of through-holes 10h, respectively, to connect the actuator 80 to the peripheral portion 63a.

[0052] When the first heat transfer medium M1 is not present in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature away from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted in a relatively high temperature range. When the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted in a relatively low temperature range. In the substrate support assembly 11, the first heat transfer medium M1 is supplied to the flow path 55 and further recovered from the flow path 55, so that the substrate temperature controllability of the substrate support assembly 11 is excellent.

[0053] A substrate support assembly according to another exemplary embodiment will be described below with reference to Fig. 5. Fig. 5 is a cross-sectional view of the substrate support assembly according to another exemplary embodiment. A substrate support assembly 11A shown in Fig. 5 can be used in place of the substrate support assembly 11 in the plasma processing apparatus 1. The substrate support assembly 11A will be described below from the perspective of differences from the substrate support assembly 11.

[0054] In the substrate support assembly 11A, the flow path 50a is a flow path for at least one heat transfer medium. The flow path 55 may be a flow path for a heat transfer medium other than the at least one heat transfer medium. At least one first pipe 71 is connected between a first end of the flow path 50a and the first container 61. At least one second pipe 72 is connected between a second end of the flow path 50a and the second container. The second end of the flow path 50a is the end opposite the first end of the flow path 50a. The substrate support assembly 11A may further include a chiller unit. The chiller unit may be connected to the flow path 55 to supply another heat transfer medium to the flow path 55. For example, the chiller units may be connected to the first end 55a and the second end 55b, respectively.

[0055] A substrate processing method according to one exemplary embodiment will be described below with reference to Fig. 6. Fig. 6 is a flowchart of the substrate processing method according to one exemplary embodiment. The substrate processing method shown in Fig. 6 (hereinafter referred to as "method MT") may be performed in the plasma processing system shown in Fig. 1. The following description will be given taking as an example a case where the control unit 2 or an operator controls each part of the plasma processing apparatus 1 to perform the substrate processing method on a substrate W.

[0056] The method MT includes a step STa, a step STb, a step STc, a step STd, a step STe, and a step STf. The method MT may also include a step ST1 and a step ST2.

[0057] First, step STa is performed. In step STa, a substrate W is prepared on a substrate support 51 in the chamber 10 of the plasma processing apparatus 1. The steps of the method MT performed after step STa are performed in a state where the substrate W is placed on the substrate support 51.

[0058] In one embodiment, process ST1 may be performed after process STa and before process STb. In process ST1, the plasma processing apparatus 1 is on standby. In process ST1, the valves 71a, 72a, 73a, and 74a are closed, and power may be supplied to the heater 51c from a power source controlled by the heater controller HC while at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in process ST1 may be smaller than the power supplied to the heater 51c in process STb, which will be described later. In one example, a first power may be supplied to the heater 51c. The temperature of the substrate W on the substrate support 51 may be set to a first temperature by heat generation by the heater 51c.

[0059] After step STa, step STb is performed. Step STb may be performed after step ST1. In step STb, the temperature of the substrate W prepared on the substrate support 51 is increased. Step STb includes a step of supplying power to the heater 51c from a power supply controlled by the heater controller HC while the valves 71a, 72a, 73a, and 74a are closed and at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in step STb may be greater than the power supplied to the heater 51c in step ST1. In one example, a second power may be supplied to the heater 51c. The second power is greater than the first power. The substrate W on the substrate support 51 may be heated to a second temperature by the heat generated by the heater 51c. The second temperature is greater than the first temperature.

[0060] In the process STb, since at least the first heat transfer medium M1 and the second heat transfer medium M2 are absent in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature that is far from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively high temperature range.

[0061] After the process STb, a process STc is performed. In the process STc, the temperature of the substrate W placed on the substrate support 51 is adjusted. The temperature to which the temperature of the substrate W is adjusted is a temperature for substrate processing of the substrate W. The process STc includes a process STc1, a process STc2, and a process STc3. The process STc includes a step of supplying a power smaller than the power in the process STb to the heater 51c from a power supply controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 may be maintained at the second temperature by heat generation by the heater 51c.

[0062] Of processes STc1, STc2, and STc3, process STc1 is performed first. In process STc1, valves 72a and 74a are opened. After process STc1, process STc2 is performed. In process STc2, the partition wall 63 is moved downward by the driving mechanism 8. By moving the partition wall 63 downward, the second heat transfer medium M2 in the first container 61 is supplied to the flow path 55 via at least one fourth pipe 74. After process STc2, process STc3 is performed. In process STc3, valves 72a and 74a are closed. By process STc3, the second heat transfer medium M2 is held in the flow path 55.

[0063] After the process STc, a process STd is performed. In the process STd, substrate processing is performed on the substrate W placed on the substrate support 51. In one example, the process STd may be a plasma processing. The process STd includes a process STd1 and a process STd2. The process STd includes a step of supplying a power smaller than the power in the process STb to the heater 51c from a power supply controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 may be maintained at the second temperature by the heat generated by the heater 51c.

[0064] In the processes STd1 and STd2, the process STd1 is performed first. In the process STd1, a processing gas is supplied into the chamber 10 from a gas inlet (for example, the shower head 13). After the process STd1, the process STd2 is performed. In the process STd2, the plasma generating unit 12 generates plasma from the processing gas in the chamber 10.

[0065] After step STd, step STe is performed. In step STe, a first heat transfer medium M1 is supplied to the flow path 55. In step STe, the temperature of the substrate W placed on the substrate support 51 is reduced. In order to supply the first heat transfer medium M1 to the flow path 55, step STe includes steps STe1, STe2, and STe3.

[0066] Of processes STe1, STe2, and STe3, process STe1 is performed first. In process STe1, valves 71a and 72a are opened. After process STe1, process STe2 is performed. In process STe2, the partition wall 63 is moved downward by the driving mechanism 8. By moving the partition wall 63 downward, the first heat transfer medium M1 in the first container 61 is supplied to the flow path 55 via at least one first pipe 71. By supplying the first heat transfer medium M1 to the flow path 55, the second heat transfer medium M2 in the flow path 55 can be recovered in the second container 62. After process STe2, process STe3 is performed. In process STe3, valves 71a and 72a are closed. By process STe3, the first heat transfer medium M1 is retained in the flow path 55.

[0067] In the process STe, since the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively low temperature range.

[0068] In one embodiment, step ST2 may be performed after step STe and before step STf. Step ST2 includes steps ST21, ST22, and ST23. Among steps ST21, ST22, and ST23, step ST21 is performed first. In step ST21, valves 72a and 74a are opened. In step ST21, valve 71a may also be opened. After step ST21, step ST22 is performed. In step ST22, the partition wall 63 is moved upward by the driving mechanism 8. By moving the partition wall 63 upward, gas in the second container 62 is supplied to the flow path 55 via at least one second pipe 72. The first heat transfer medium M1 in the flow path 55 can be recovered in the first container 61 via at least one fourth pipe 74. The first heat transfer medium M1 in the flow path 55 may be recovered in the first container 61 via at least one first pipe 71. After step ST22, step ST23 is performed in which the valves 74a and 72a are closed.

[0069] After the step STe, the step STf is performed. The step STf may be performed after the step ST2. In the step STf, at least the second heat transfer medium M2 is recovered from the second container 62 to the first container 61. In the step STf, the first heat transfer medium M1 and the second heat transfer medium M2 may be recovered from the second container 62 to the first container 61. The step STf includes a step of opening the valve 73a while the valves 71a, 72a, and 74a are closed and the partition wall 63 is moved upward. The second heat transfer medium M2 is recovered from the second container 62 to the first container 61 via at least one third pipe 73.

[0070] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0071] The first container 61 may not include the first bellows 61a. The second container 62 may not include the second bellows 62a. Each of the first container 61 and the second container 62 may be composed of a cylinder and a piston. Each piston is configured to be able to change the volume of the cylinder. The drive mechanism 8 may be configured to operate each piston of the first container 61 and the second container 62. The first container 61 and the second container 62 may be composed of a single cylinder and a partition 63. In this case, the partition 63 is configured to be slidable within the single cylinder. The partition 63 is used as a piston within the cylinder and is configured to be able to change the volume of each of the first container 61 and the second container 62.

[0072] The flow path 55 may include a plurality of independent flow paths. In one example, the flow path 55 may include a first flow path located below the central region 5 a (substrate support surface) and a second flow path located below the annular region 5 b (ring support surface).

[0073] In the method MT, not all of the steps STa to STf may be performed. In one example, in the method MT, some of the steps STa to STf may be skipped.

[0074] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E16] below.

[0075] [E1] A gas supply system comprising: a base having a flow path; a substrate support on the base; and a heat transfer medium supply unit connected to the flow path, wherein the heat transfer medium supply unit includes: a first container configured to be able to store a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container configured to be able to store a gas therein, the specific gravity of the heat transfer medium being greater than the specific gravity of the gas; and at least one second pipe connected between a second end of the flow path and the second container, wherein the first container is configured to change a first capacity thereof so as to supply the heat transfer medium to the flow path via the at least one first pipe by reducing a first capacity thereof; and the second container is configured to change a second capacity thereof so as to supply the gas to the flow path via the at least one second pipe by reducing a second capacity thereof. a heat transfer medium supply unit configured to supply a heat transfer medium to the first container and the second container; a heat transfer medium supply unit configured to supply a heat transfer medium to the first container and the second container; a heat transfer medium supply unit configured to supply a heat transfer medium to the first container and the second container;

[0076] [E2] The substrate support assembly described in E1, wherein the first container includes a sidewall including a first bellows, and the first volume is configured to be changeable by expansion and contraction of the first bellows, and the second container includes a sidewall including a second bellows, and the second volume is configured to be changeable by expansion and contraction of the second bellows.

[0077] [E3] The substrate support assembly of E2, wherein the first container is positioned below the second container.

[0078] [E4] The substrate support assembly described in E2 or E3, wherein the first container and the second container include a partition wall disposed between the first bellows and the second bellows, and the first bellows and the second bellows are configured to expand and contract by vertical movement of the partition wall.

[0079] [E5] The substrate support assembly of E4, wherein the partition is a top wall of the first container and a bottom wall of the second container.

[0080] [E6] The substrate support assembly of E4 or E5, wherein the valve is configured to move with the partition.

[0081] [E7] The substrate support assembly according to any one of E4 to E6, further comprising a drive mechanism configured to move the partition wall along the vertical direction.

[0082] [E8] The substrate support assembly described in E7, wherein the partition includes a peripheral portion that protrudes outward relative to the side wall of the first container, and the drive mechanism includes: an actuator; and a joint that connects the peripheral portion and the actuator to move the partition along the vertical direction.

[0083] [E9] A substrate support assembly as described in E8, further comprising: a substrate; and an insulating member disposed on the substrate, wherein the base is supported on the substrate via the insulating member, the heat transfer medium supply unit is disposed between the base and the substrate, the actuator is disposed below the substrate, the substrate provides a plurality of through holes positioned below the peripheral portion, and the joint includes a plurality of shafts, each of the plurality of shafts being connected to the peripheral portion through the plurality of through holes.

[0084] [E10] The substrate support assembly of E8 or E9, wherein the actuator includes an air cylinder.

[0085] [E11] The substrate support assembly of any one of E1 to E10, wherein the heat transfer medium supply unit further includes a valve connected between the first end and the first container via the at least one first pipe.

[0086] [E12] The substrate support assembly of any one of E1 to E11, wherein the heat transfer medium supply unit further includes a valve connected between the second end and the second container via the at least one second pipe.

[0087] [E13] The substrate support assembly of any one of E1 to E12, wherein the heat transfer medium is a liquid metal.

[0088] [E14] A substrate support assembly described in any one of E1 to E13, wherein at least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

[0089] [E15] The substrate support assembly of any one of E1 to E14, wherein the heat transfer medium is a first heat transfer medium, the first container is capable of storing a second heat transfer medium therein, the second heat transfer medium having a specific gravity smaller than that of the first heat transfer medium and larger than that of the gas, the heat transfer medium supply unit further includes: at least one fourth pipe; and a valve connected between the first end and the first container via the at least one fourth pipe, and the position where the at least one fourth pipe is connected to the first container is located above the position where the at least one first pipe is connected to the first container.

[0090] [E16] A substrate processing apparatus comprising: a chamber; and a substrate support assembly according to any one of E1 to E15 configured to support a substrate in the chamber.

[0091] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0092] 1...plasma processing apparatus, 6...heat transfer medium supply unit, 8...driving mechanism, 10...chamber, 10c...substrate, 10h...through hole, 11, 11A...substrate support assembly, 12...plasma generation unit, 50...base, 50a, 55...flow path, 51...substrate support unit, 51c...heater, 55a...first end, 55b...second end, 61...first container, 62...second container, 61a...first bellows, 62a...second bellows Rose, 63...partition wall, 63a...periphery, 71...first pipe, 72...second pipe, 73...third pipe, 74...fourth pipe, 71a...first valve, 72a...second valve, 73a...third valve, 74a...fourth valve, 80...actuator, 81...joint, 81a...shaft, D1...vertical direction, HC...heater controller, M1...first heat transfer medium, M2...second heat transfer medium, W...substrate.

Claims

1. A gas supplying device comprising: a base having a flow path; a substrate support on the base; and a heat transfer medium supplying unit connected to the flow path, the heat transfer medium supplying unit including: a first container configured to be capable of storing a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container configured to be capable of storing a gas therein, the specific gravity of the heat transfer medium being greater than the specific gravity of the gas; and at least one second pipe connected between a second end of the flow path and the second container, the first container being configured to be capable of changing a first capacity thereof so as to supply the heat transfer medium to the flow path via the at least one first pipe; and the second container being configured to be capable of changing a second capacity thereof so as to supply the gas to the flow path via the at least one second pipe, a heat transfer medium supply section that supplies heat to the first and second containers through the at least one third pipe; and a valve that is connected between the first and second containers through the at least one third pipe.

2. The substrate support assembly of claim 1, wherein the first container includes a sidewall including a first bellows and is configured to change the first volume by expanding and contracting the first bellows, and the second container includes a sidewall including a second bellows and is configured to change the second volume by expanding and contracting the second bellows.

3. The substrate support assembly of claim 2, wherein the first container is disposed below the second container.

4. The substrate support assembly of claim 3, wherein the first container and the second container include a partition disposed between the first bellows and the second bellows, and the first bellows and the second bellows are configured to expand and contract by vertical movement of the partition.

5. The substrate support assembly of claim 4, wherein said partition is a top wall of said first container and a bottom wall of said second container.

6. The substrate support assembly of claim 4, wherein the valve is configured to move with the bulkhead.

7. The substrate support assembly of claim 4, further comprising a drive mechanism configured to move said partition along said vertical direction.

8. A substrate support assembly as described in claim 7, wherein the partition includes a peripheral portion protruding outward relative to the side wall of the first container, and the drive mechanism includes: an actuator; and a joint connecting the peripheral portion and the actuator to move the partition along the vertical direction.

9. The substrate support assembly of claim 8, further comprising: a substrate; and an insulating member disposed on the substrate, wherein the base is supported on the substrate via the insulating member, the heat transfer medium supply is disposed between the base and the substrate, the actuator is disposed below the substrate, the substrate provides a plurality of through holes located below the peripheral portion, and the joint includes a plurality of shafts, each of the plurality of shafts being coupled to the peripheral portion through the plurality of through holes.

10. The substrate support assembly of claim 8, wherein the actuator comprises an air cylinder.

11. The substrate support assembly of any one of claims 1 to 10, wherein the heat transfer medium supply further comprises a valve connected between the first end and the first container via the at least one first pipe.

12. A substrate support assembly as claimed in any one of claims 1 to 10, wherein the heat transfer medium supply further comprises a valve connected between the second end and the second container via the at least one second pipe.

13. The substrate support assembly of any preceding claim, wherein the heat transfer medium is a liquid metal.

14. The substrate support assembly of claim 13, wherein at least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

15. A substrate support assembly as described in any one of claims 3 to 10, wherein the heat transfer medium is a first heat transfer medium, the first container is capable of storing a second heat transfer medium therein, the second heat transfer medium having a specific gravity smaller than that of the first heat transfer medium and larger than that of the gas, the heat transfer medium supply unit further includes: at least one fourth pipe; and a valve connected between the first end and the first container via the at least one fourth pipe, and a position where the at least one fourth pipe is connected to the first container is located above a position where the at least one first pipe is connected to the first container.

16. A substrate processing apparatus comprising: a chamber; and a substrate support assembly according to any one of claims 1 to 10 configured to support a substrate in the chamber.

17. A substrate processing method executed in a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a substrate support assembly configured to support a substrate in the chamber; a heater disposed in a substrate support portion of the substrate support assembly; a heater controller electrically connected to the heater; a gas introduction portion configured to introduce a process gas into the chamber; and a plasma generation portion configured to generate plasma from the process gas in the chamber, the substrate support assembly comprising: a base having a flow path; the substrate support portion on the base; and a heat transfer medium supply portion connected to the flow path, the heat transfer medium supply portion comprising: a first container having a partition wall as its upper wall and a side wall including a first bellows that can expand and contract by vertical movement of the partition wall, the first container being configured to be capable of storing a first heat transfer medium and a second heat transfer medium therein, and configured to change the first volume thereof so that the first heat transfer medium or the second heat transfer medium is supplied to the flow path through at least one first pipe by reducing a first volume thereof; the at least one first pipe; a first valve connected between a first end of the flow path and the first container via the at least one first pipe; a second container having a side wall including the partition wall as a bottom wall and a second bellows expandable by vertical movement of the partition wall, the second container being configured to be capable of storing a gas therein, the second container being configured to change a second volume thereof so as to supply the gas to the flow path via the at least one second pipe by reducing a second volume thereof, the specific gravity of the second heat transfer medium being smaller than that of the first heat transfer medium and larger than that of the gas; the at least one second pipe; a second valve connected between the second end of the flow path and the second container via the at least one second pipe; at least one third pipe; and a third valve connected between the first container and the second container via the at least one third pipe.at least one fourth pipe connected to the first container above a position where the at least one first pipe is connected to the first container; a fourth valve connected between the first end and the first container via the at least one fourth pipe; and a drive mechanism configured to move the partition wall in a vertical direction, the substrate processing method comprising: (a) preparing a substrate on the substrate support; (b) after (a), increasing a temperature of the substrate; (c) after (b), adjusting a temperature of the substrate to a temperature for substrate processing on the substrate; (d) after (b), performing the substrate processing on the substrate; (e) after (d), decreasing the temperature of the substrate; and (f) after (e), recovering at least the second heat transfer medium from the second container. (b) includes a step of supplying power from the heater controller to the heater in a state in which the first valve, the second valve, the third valve, and the fourth valve are closed and at least the first heat transfer medium and the second heat transfer medium are not supplied to the flow path; (c) and (d) include a step of supplying power from the heater controller to the heater throughout (c) and (d) that is smaller than the power in (b), (c) includes a step of (c1) opening the second valve and the fourth valve in order to supply the second heat transfer medium to the flow path; (c2) after (c1), moving the partition wall downward by the driving mechanism; and (c3) after (c2), closing the second valve and the fourth valve; and (d) includes a step of (d1) supplying the process gas from the gas inlet into the chamber; (d2) generating plasma from the processing gas in the chamber by the plasma generating unit, and (e) includes the steps of: (e1) opening the first valve and the second valve in order to supply the first heat transfer medium to the flow path; (e2) moving the partition wall downward by the driving mechanism after (e1); and (e3) closing the first valve and the second valve after (e2),The substrate processing method, wherein the step (f) includes the step of opening the third valve while the first valve, the second valve, and the fourth valve are closed and the partition wall is moved upward.

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