Coated substrates and related methods

Abstract

Ceramic articles and methods for forming ceramic articles are provided. A method comprises one or more of the following steps: obtaining a substrate having at least one defect; contacting, under deposition conditions, the substrate with at least a first precursor to form a coated substrate comprising a first coating on the substrate, wherein the coated substrate has a surface roughness value that is less than a surface roughness value of the substrate without the first coating; polishing at least a portion of a surface of the substrate to obtain a substrate having a polished surface; contacting the substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the substrate; and contacting, under deposition conditions, the substrate with at least a second precursor to form a second coated substrate comprising a second coating on the substrate.

Description

COATED SUBSTRATES AND RELATED METHODSCROSS REFERENCE TO RELATED APPLICATION

[0001] This application claims the benefit of and priority to U.S. Provisional Application No. 63 / 543,017 filed on October 6, 2023, which is incorporated herein by reference in its entirety for all purposes.FIELD

[0002] The present disclosure relates to coated substrates and related methods.BACKGROUND

[0003] Ceramic substrates can have various defects. When used in microelectronics and semiconductor fabrication, the presence of these defects in the ceramic substrates may result in undesirable properties and / or performance issues.SUMMARY

[0004] Some embodiments relate to a method for forming a ceramic article. In some embodiments, the method for forming a ceramic article comprises obtaining a ceramic substrate having at least one defect. In some embodiments, the method for forming a ceramic article comprises contacting, under deposition conditions, the ceramic substrate with at least a first precursor to form a coated ceramic substrate. In some embodiments, the coated ceramic substrate has a surface roughness that is less than a surface roughness of the ceramic substrate without the coating. In some embodiments, the method for forming a ceramic article comprises polishing at least a portion of a surface of the ceramic substrate to obtain a ceramic substrate having a polished surface. In some embodiments, the method for forming a ceramic article comprises contacting the ceramic substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the ceramic substrate. In some embodiments, the method for forming a ceramic articlecomprises contacting, under deposition conditions, the ceramic substrate with at least a second precursor to form a second coating on the ceramic substrate.DRAWINGS

[0005] Some embodiments of the disclosure are herein described, by way of example only, with reference to the accompanying drawings. With specific reference now to the drawings in detail, it is stressed that the embodiments shown are by way of example and for purposes of illustrative discussion of embodiments of the disclosure. In this regard, the description taken with the drawings makes apparent to those skilled in the art how embodiments of the disclosure may be practiced.

[0006] FIG. 1 is a flowchart of a method for making an article, according to some embodiments.

[0007] FIG. 2 is a schematic diagram illustrating a method for making an article, according to some embodiments.

[0008] FIG. 3 is a focused ion beam (FIB) image of a coated substrate, as described herein according to the various embodiments.

[0009] FIG. 4A shows images taken with a laser confocal microscope at 50x magnification of some of the substrates before coating.

[0010] FIG. 4B shows images taken with a laser confocal microscope at 50x magnification of some of the substrates after coating.DETAILED DESCRIPTION

[0011] Among those benefits and improvements that have been disclosed, other objects and advantages of this disclosure will become apparent from the following description taken in conjunction with the accompanying figures. Detailed embodiments of the present disclosure are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the disclosure that may be embodied in various forms. In addition, each of the examples given regarding the various embodiments of the disclosure which are intended to be illustrative, and not restrictive.

[0012] Any prior patents and publications referenced herein are incorporated by reference in their entireties.

[0013] Throughout the specification and claims, the following terms take the meanings explicitly associated herein, unless the context clearly dictates otherwise. The phrases "in one embodiment," “in an embodiment,” and "in some embodiments" as used herein do not necessarily refer to the same embodiment(s), though it may. Furthermore, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to a different embodiment, although it may. All embodiments of the disclosure are intended to be combinable without departing from the scope or spirit of the disclosure.

[0014] As used herein, a surface roughness value, Sa, refers to an arithmetical mean height. In some embodiments, the arithmetical mean height is an absolute value. In some embodiments, the arithmetical mean height is the difference in height of each surface feature compared to the arithmetical mean of the surface.

[0015] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout the specification, the meaning of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0016] Some embodiments relate to coated ceramic substrates and related methods. In some embodiments, a method for forming a defect-free substrate is provided. In some embodiments, the method comprises forming a coating on a substrate having one or more defects. Non-limiting examples of defects include, without limitation, surface defects, such as, for example and without limitation, open pores, surface pits, scratches, etch lines, and the like. In some embodiments, the methods for forming defect-free substrates comprise fewer steps than conventional methods, such as, for example and without limitation, conventional methods for forming pit-free RF windows, among others. In some embodiments, the methods for forming defect-free substrates reduce material removal relative to conventional methods. In some embodiments, the methods for forming defect-free substrates provide ease in meeting specifications and permit refurbing and / or reworking of substrates.

[0017] The coatings disclosed herein may be formed on substrates via one or more deposition processes. Non-limiting examples of deposition processes include, without limitation, at least one of a chemical vapor deposition (CVD) process, a physical vapor deposition process (PVD), a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclical chemical vapor deposition process (PECCVD), a flowable chemical vapor deposition process (FCVD), an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma-enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof. It will be appreciated that other deposition processes may be employed without departing from the scope of this disclosure.

[0018] FIG. 1 is a flowchart of a method 100 for coating a substrate, according to some embodiments. As shown in FIG. 1 , the method 100 for coating a substrate may include one or more of the following steps: obtaining 102 a substrate having at least one defect; contacting 104, under deposition conditions, the substrate with at least a first precursor to form a first coating on the substrate; polishing 106 at least a portion of a surface of the substrate to obtain a substrate having a polished surface; contacting 108 the substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the substrate; and contacting 110, under deposition conditions, the substrate with at least a second precursor to form a second coating on the substrate.

[0019] At step 102, in some embodiments, the method 100 comprises obtaining a substrate having at least one defect. In some embodiments, the substrate comprises at least one of silicon dioxide, aluminum oxide, magnesium oxide, yttrium oxide, hafnium oxide, zirconium oxide, aluminum nitride, silicone nitride, boron nitride, titanium nitride, boron nitride, silicon carbide, titanium carbide, porcelain, ferrite, steatite, cordierite, mullite, or any combination thereof. In some embodiments, the substrate comprises alumina. In some embodiments, the substrate comprises yttria. In some embodiments, the substrate comprises titania. In some embodiments, the substrate comprises zirconia. In some embodiments,the substrate comprises silicon carbide. In some embodiments, the substrate comprises aluminum nitride. In some embodiments, the substrate is a ceramic substrate. In some embodiments, the substrate comprises an alumina substrate. In some embodiments, the substrate comprises AI2O3. In some embodiments, the substrate comprises at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, AI2O3, AIN, ZrO2, La2O3, TaN, RuO2, lrO2, Nb2O3, Y2O3, hafnium oxide, or any combination thereof.

[0020] The defect may comprise a feature that results in an undesirable property, characteristic, or aspect of the substrate or of a product comprising the substrate (e.g., a product obtained after processing of the substrate). In some embodiments, the at least one defect comprises at least one of a pore, a pit, a scratch, an etch line, a crack, a material inclusion, a puncture, a pinhole, or any combination thereof.

[0021] The substrate, prior to being coated and / or when uncoated (e.g., an uncoated substrate), has a surface roughness value, Sa, of 1 .3 pm or greater. In some embodiments, the uncoated substrate has a surface roughness value, Sa, of 1.3 pm to 10 pm, or any range or subrange between 1.3 pm and 10 pm. In some embodiments, the uncoated substrate has a surface roughness value, Sa, of 1.3 pm to 10 pm, 1 .3 pm to 9.5 pm, 1 .3 pm to 9 pm, 1 .3 pm to 8.5 pm, 1 .3 pm to 8 pm, 1 .3 pm to 7.5 pm, 1 .3 pm to 7 pm, 1 .3 pm to 6.5 pm, 1 .3 pm to 6 pm, 1 .3 pm to 5.5 pm, 1 .3 pm to 5 pm, 1 .3 pm to 4.5 pm, 1 .3 pm to 4 pm, 1 .3 pm to 3.5 pm, 1 .3 pm to 3 pm, 1 .3 pm to 2.5 pm, 1 .3 pm to 2 pm, 1 .3 pm to 1 .9 pm, 1 .3 pm to 1 .8 pm, 1 .3 pm to 1 .7 pm, 1 .3 pm to 1 .6 pm, 1 .3 pm to 1 .5 pm, 1 .3 pm to 1 .4 pm, 1 .5 pm to 2 pm, 1 .6 pm to 2 pm, 1 .7 pm to 2 pm, 1 .8 pm to 2 pm, 1 .9 pm to 2 pm, 2 pm to 10 pm, 3 pm to 10 pm, 4 pm to 10 pm, 5 pm to 10 pm, 6 pm to 10 pm, 7 pm to 10 pm, 8 pm to 10 pm, or 9 pm to 10 pm. In some embodiments, the uncoated substrate has a surface roughness value, Sa, of 0.2 or less, or any range or subrange between 0.001 and 0.2. In some embodiments, the uncoated substrate has a surface roughness value, Sz, of 7.5 or less, or any range or subrange between 0.5 and 7.5.

[0022] At step 104, in some embodiments, the method 100 comprises contacting, under deposition conditions, the substrate with at least a first precursor to form a first coating on the substrate. In some embodiments, the deposition conditions are vapor deposition conditions, and the first precursor comprises a first vaporized precursor. In some embodiments, for example, the contacting comprises flowing the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises introducing the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises vaporizing a first precursor to obtain the first vaporized precursor. In some embodiments, the contacting comprises pumping the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises exposing the substrate to the first vaporized precursor. In some embodiments, the contacting comprises feeding the first vaporized precursor to a chamber containing the substrate. In some embodiments, the contacting comprises forming a first coating on the substrate.

[0023] The first precursor may comprise a precursor suitable for forming the first coating on the substrate. In some embodiments, for example, the first vaporized precursor may comprise a vaporized precursor suitable for forming the first coating on the substrate. In some embodiments, the first vaporized precursor is derived from a solid precursor via a process for forming a vapor and / or gas. In some embodiments, the first vaporized precursor comprises at least one of a metalcontaining precursor, an organo-metallic precursor, or any combination thereof. In some embodiments, the first vaporized precursor comprises at least one of an alumina precursor vapor, a yttria precursor vapor, or any combination thereof. As used herein, the term “alumina precursor” refers to a substance capable of being deposited to form a layer of alumina. As used herein, the term “yttria precursor” refers to a substance capable of being deposited to form a layer of yttria. In some embodiments, the first vaporized precursor comprises at least one of one of AlCh, AI(CHS)3, AI(OCH(CH3)2), Al(acetylacetonate)3, 2,2,6,6-tetramethyl-3,5- octanedionato (TMOD) yttrium, yttrium acetate hydrate (e.g., Y(O2CCH3)3.4H2O), a yttrium-stabilized ZrO2, yttrium (III) acetylacetonate (Y(acac)s), yttrium (III)hexafluoroacetylacetonate (Y(acacFe)s), yttrium (III) tris(2,2,6,6-tetramethyl-3,5- heptanedionate) (Y(tmhd)3), hydrates thereof (e.g., dihydrates thereof), or any combination thereof. In some embodiments, the first vaporized precursor comprises at least one of yttrium (III) acetylacetonate hydrate, yttrium (III) hexafluoroacetylacetonate dihydrate, Y(OsH7O2)3-nH2O (n is 1 to 10), or any combination thereof.

[0024] In some embodiments, the substrate is further contacted with at least one coreactant precursor. In some embodiments, the at least one co-reactant precursor comprises at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor may be selected to obtain a desired film. In some embodiments, the at least one co-reactant precursor may comprise at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylene diamine, or any combination thereof. In some embodiments, the at least one co-reactant precursor may comprise at least one of H2, O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, a carboxylic acid, an alcohol, a diol, air, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprises at least one of methane, ethane, ethylene, acetylene, or any combination thereof. In some embodiments, the at least one coreactant precursor may be obtained in a container or other vessel in which the at least one co-reactant precursor is to be vaporized. In some embodiments, the at least one co-reactant precursor is a vaporized co-reactant precursor. In some embodiments, the method further comprises an inert gas, such as, for example, at least one of argon, helium, nitrogen, or any combination thereof.

[0025] In some embodiments, the method comprises vaporizing a precursor. The vaporizing may comprise heating the precursor sufficient to obtain the vaporized precursor. In some embodiments, the vaporizing may comprise heating a container comprising the precursor. In some embodiments, the vaporizing may comprise heating the precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, the vaporizing may comprise heating a conduit for delivering the precursor, vaporized precursor, or any combinationthereof to, for example, a deposition chamber. In some embodiments, the vaporizing may comprise operating a vapor delivery system comprising the precursor. In some embodiments, the vaporizing may comprise heating to a temperature sufficient to vaporize the precursor to obtain the vaporized precursor. In some embodiments, the vaporizing may comprise heating to a temperature below a decomposition temperature of at least one of the precursor, the vaporized precursor, or any combination thereof. In some embodiments, the precursor may be present in a gas phase, in which case the step 106 is optional and not required. For example, the precursor may comprise the vaporized precursor.

[0026] In some embodiments, the method comprises vaporizing the at least one coreactant precursor. In some embodiments, the vaporizing may comprise heating the at least one co-reactant precursor sufficient to obtain the at least one vaporized co-reactant precursor. In some embodiments, the vaporizing may comprise heating a container comprising the at least one co-reactant precursor. In some embodiments, the vaporizing may comprise heating the at least one co-reactant precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, the vaporizing may comprise heating a conduit for delivering the at least one co-reactant precursor, the at least one vaporized coreactant precursor, or any combination thereof to, for example, a deposition chamber. In some embodiments, the vaporizing may comprise operating a vapor delivery system comprising the at least one co-reactant precursor. In some embodiments, the vaporizing may comprise heating to a temperature sufficient to vaporize the at least one co-reactant precursor to obtain the at least one vaporized co-reactant precursor. In some embodiments, the vaporizing may comprise heating to a temperature below a decomposition temperature of at least one of the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the at least one coreactant precursor may be present in a gas phase, in which case this step is optional and not required. For example, the at least one co-reactant precursor may comprise the at least one vaporized co-reactant precursor.

[0027] The contacting may be performed in any system, apparatus, device, assembly, chamber thereof, or component thereof suitable for deposition processes (e.g., vapor deposition processes, among others), including, for example and without limitation, a chamber or a deposition chamber, among others. The first precursor and the at least one co-reactant precursor may be contacted with the substrate at the same time or at different times. For example, each of the first precursor, the at least one co-reactant precursor, and the substrate may be present in the deposition chamber at the same time. That is, in some embodiments, the contacting may comprise contemporaneous contacting or simultaneous contacting of the first precursor and the at least one co-reactant precursor with the substrate. Alternatively, each of the first precursor and the at least one co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, the contacting may comprise alternate and / or sequential contacting, in one or more cycles, of the first precursor with the substrate and subsequently contacting the at least one co-reactant precursor with the substrate.

[0028] The deposition conditions may comprise conditions for vapor deposition processes. Examples of vapor deposition conditions include, without limitation, vapor deposition conditions for vapor deposition processes including at least one of a chemical vapor deposition (CVD) process, a physical vapor deposition process (PVD), a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclical chemical vapor deposition process (PECCVD), a flowable chemical vapor deposition process (FCVD), an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma-enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a plasma- enhanced chemical vapor deposition (PECVD) process, or any combination thereof.

[0029] The deposition conditions may comprise a deposition temperature. The deposition temperature may be a temperature less than the thermal decomposition temperature of at least one of the first precursor, the at least one co-reactant precursor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or avoid condensation of at least one of the firstprecursor, the at least one co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other vessel in which the substrate is contacted with the first precursor and the at least one co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the first precursor, the at least one co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0030] The deposition temperature may be a temperature of 200 °C to 2500 °C. In some embodiments, the deposition temperature may be a temperature of 500 °C to 700 °C. For example, in some embodiments, the deposition temperature may be a temperature of 500 °C to 680 °C, 500 °C to 660 °C, 500 °C to 640 °C, 500 °C to 620 °C, 500 °C to 600 °C, 500 °C to 580 °C, 500 °C to 560 °C, 500 °C to 540 °C, 500 °C to 520 °C, 520 °C to 700 °C, 540 °C to 700 °C, 560 °C to 700 °C, 580 °C to 700 °C, 600 °C to 700 °C, 620 °C to 700 °C, 640 °C to 700 °C, 660 °C to 700 °C, or 680 °C to 700 °C. In other embodiments, the deposition temperature may be a temperature of greater than 200 °C to 2500 °C, such as, for example and without limitation, a temperature of 400 °C to 2000, 500 °C to 2000 °C, 550 °C to 2400 °C, 600 °C to 2400 °C, 625 °C to 2400 °C, 650 °C to 2400 °C, 675 °C to 2400 °C, 700 °C to 2400°C, 725 °C to 2400 °C, 750 °C to 2400 °C, 775 °C to 2400 °C, 800 °C to 2400 °C, 825 °C to 2400 °C, 850 °C to 2400 °C, 875 °C to 2400 °C, 900 °C to 2400 °C, 925 °C to 2400 °C, 950°C to 2400 °C, 975 °C to 2400 °C, 1000 °C to 2400 °C, 1025 °C to 2400 °C, 1050 °C to 2400 °C, 1075 °C to 2400 °C, 1 100 °C to 2400 °C, 1200 °C to 2400 °C, 1300 °C to 2400 °C, 1400 °C to 2400 °C, 1500 °C to 2400 °C, 1600 °C to 2400 °C, 1700 °C to 2400 °C, 1800 °C to 2400 °C, 1900 °C to 2400 °C, 2000 °C to 2400 °C, 2100 °C to 2400 °C, 2200 °C to 2400 °C, 2300 °C to 2400 °C, 500 °C to 2000 °C, 500 °C to 1900 °C, 500 °C to 1800 °C, 500 °C to 1700 °C, 500 °C to 1600 °C, 500 °C to 1500 °C, 500 °C to 1400 °C, 500 °C to 1300 °C, 500 °C to 1200 °C, 500 °C to 1 100 °C, 500 °C to 1000 °C, 500 °C to 1000 °C, 500 °C to 900 °C, or 500 °C to 800 °C.

[0031] The deposition conditions may comprise a deposition pressure. In some embodiments, the deposition pressure may comprise a vapor pressure of at least one of the first precursor, the at least one co-reactant precursor, or anycombination thereof. In some embodiments, the deposition pressure may comprise a chamber pressure.

[0032] The deposition pressure may be a pressure of 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure of 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torr to 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In other embodiments, the deposition pressure may be a pressure of 1 Torr to 100 Torr, 5 Torr to 100 Torr, 10 Torr to 100 Torr, 15 Torr to 100 Torr, 20 Torr to100 Torr, 25 Torr to 100 Torr, 30 Torr to 100 Torr, 35 Torr to 100 Torr, 40 Torr to100 Torr, 45 Torr to 100 Torr, 50 Torr to 100 Torr, 55 Torr to 100 Torr, 60 Torr to100 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure of 1 mTorr to 100 mTorr, 1 mTorr to 90 mTorr, 1 mTorr to 80 mTorr, 1 mTorr to 70 mTorr, 1 mTorr to 60 mTorr, 1 mTorr to 50 mTorr, 1 mTorr to 40 mTorr, 1 mTorr to 30 mTorr, 1 mTorr to 20 mTorr, 1 mTorr to 10 mTorr, 100 mTorr to 300 mTorr, 150 mTorr to 300 mTorr, 200 mTorr to 300 mTorr, or 150 mTorr to 250 mTorr, or 150 mTorr to 225 mTorr.

[0033] In some embodiments, the first coating comprises yttria, a fluorinated yttria, an alumina, or any combination thereof. In some embodiments, the first coating comprises at least one of AI2O3, Y2O3, or any combination thereof. In some embodiments, the first coating is a ceramic coating. In some embodiments, the first coating comprises a mixed oxide coating. In some embodiments, the mixed oxide coating comprises yttrium aluminum oxide (YAO).

[0034] In some embodiments, the first coating directly contacts the substrate. In some embodiments, the first coating fills at least one of the at least one defects present on the substrate. In some embodiments, the coated substrate has a surface roughness that is less than a surface roughness of the substrate without the first coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60% less than the surface roughness value of the substrate without the firstcoating, or any range or subrange between 5% and 60%. In some embodiments, the surface roughness of the coated substrate is 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or 55% to 60% less than the surface roughness value of the substrate without the first coating.

[0035] In some embodiments, the coated substrate has a surface roughness value, Sa, of less than 1.3 m. In some embodiments, the coated substrate has a surface roughness value, Sa, of 0.1 pm to 1 .3 pm, 0.1 pm to 1 .2 pm, 0.1 pm to 1 .1 pm, 0.1 pm to 1 pm, 0.1 pm to 0.9 pm, 0.1 pm to 0.8 pm, 0.1 pm to 0.7 pm, 0.1 pm to 0.6 pm, 0.1 pm to 0.5 pm, 0.1 pm to 0.4 pm, 0.1 pm to 0.3 pm, 0.1 pm to 0.2 pm, 0.2 pm to 1 .3 pm, 0.3 pm to 1 .3 pm, 0.4 pm to 1 .3 pm, 0.5 pm to 1 .3 pm, 0.6 pm to 1.3 pm, 0.7 pm to 1.3 pm, 0.8 pm to 1.3 pm, 0.9 pm to 1.3 pm, 1 pm to 1.3 pm, 1 .1 pm to 1 .3 pm, or 1 .2 pm to 1 .3 pm.

[0036] In some embodiments, the first coating is a non-sintered coating.

[0037] The first coating may have a thickness of 1 pm to 30 pm, or any range or subrange between 1 pm and 30 pm. In some embodiments, the first coating has a thickness of 1 pm to 29 pm, 1 pm to 28 pm, 1 pm to 27 pm, 1 pm to 26 pm, 1 pm to 25 pm, 1 pm to 24 pm, 1 pm to 23 pm, 1 pm to 22 pm, 1 pm to 21 pm, 1 pm to 20 pm, 1 pm to 19 pm, 1 pm to 18 pm, 1 pm to 17 pm, 1 pm to 16 pm, 1 pm to 15 pm, 1 pm to 14 pm, 1 pm to 13 pm, 1 pm to 12 pm, 1 pm to 11 pm, 1 pm to 10 pm, 1 pm to 9 pm, 1 pm to 8 pm, 1 pm to 7 pm, 1 pm to 6 pm, 1 pm to 5 pm, 1 pm to 4 pm, 1 pm to 3 pm, 1 pm to 2 pm, 2 pm to 30 pm, 3 pm to 30 pm, 4 pm to 30 pm, 5 pm to 30 pm, 6 pm to 30 pm, 7 pm to 30 pm, 8 pm to 30 pm, 9 pm to 30 pm, 10 pm to 30 pm, 11 pm to 30 pm, 12 pm to 30 pm, 13 pm to 30 pm, 14 pm to 30 pm, 15 pm to 30 pm, 16 pm to 30 pm, 17 pm to 30 pm, 18 pm to 30 pm, 19 pm to 30 pm, 20 pm to 30 pm, 21 pm to 30 pm, 22 pm to 30 pm, 23 pm to 30 pm, 24 pm to 30 pm, 25 pm to 30 pm, 26 pm to 30 pm, 27 pm to 30 pm, 28 pm to 30 pm, or 29 pm to 30 pm.

[0038] At step 106, in some embodiments, the method comprises polishing at least a portion of a surface of the substrate to obtain a substrate having a polished surface.

[0039] In some embodiments, the polishing comprises polishing by a mechanical process. In some embodiments, the polishing comprises polishing by a chemicalmechanical process. In some embodiments, the polishing comprises chemicalmechanical planarization. In some embodiments, the polishing comprises contacting the substrate with a solution. In some embodiments, the polishing comprises contacting the substrate with a slurry. In some embodiments, the polishing comprises contacting the substrate with an abrasive. In some embodiments, the polishing comprises contacting the substrate with a polishing pad. In some embodiments, the polishing comprises contacting the substrate with an abrasive pad. In some embodiments, the solution and / or the slurry comprises a corrosive substance relative to the substrate.

[0040] At step 108, in some embodiments, the method comprises contacting the substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the substrate.

[0041] In some embodiments, the contacting comprises flowing the vaporized fluorine- containing precursor into a chamber containing the substrate. In some embodiments, the contacting comprises introducing the vaporized fluorine- containing precursor into a chamber containing the substrate. In some embodiments, the contacting comprises vaporizing a fluorine-containing precursor to obtain the vaporized fluorine-containing precursor. In some embodiments, the contacting comprises pumping the vaporized fluorine-containing precursor into a chamber containing the substrate. In some embodiments, the contacting comprises exposing the substrate to the vaporized fluorine-containing precursor. In some embodiments, the contacting comprises feeding the vaporized fluorine- containing precursor to a chamber containing the substrate. In some embodiments, the vaporized fluorine-containing precursor is derived from a fluorine component. In some embodiments, the fluorine component reacts or is reactive with at least one of the substrate, the first coating, or any combination thereof.

[0042] In some embodiments, the fluorine component comprises a molecular fluorine source vapor, which may be derived from a liquid or solid. In some embodiments,the fluorine component comprises molecular fluorine. In some embodiments, the fluorine component is not ionic, substantially not ionic, not processed (e.g., by adding energy other than heat) to form plasma, or any combination thereof. In some embodiments, the fluorine component comprises at least one of a fluorinated organic compound, a perfluorinated organic compound, or any combination thereof. In some embodiments, for example, the fluorine component comprises at least one of a fluorinated alkane, a perfluorinated alkane, a fluorinated alkene, a perfluorinated alkene, or any combination thereof, wherein any one or more of which may be linear or branched. In some embodiments, the fluorine-containing vapor comprises at least one of CF4, C2F4, C3F6, C4F8, CHF3, C2H2F2, C2F6, HF, CH3F, or any combination thereof.

[0043] In some embodiments, the fluorine component comprises a vaporized fluorinated polymer. In some embodiments, for example, obtaining the reactive vapor comprises heating a fluorinated polymer to a temperature sufficient to vaporize at least a portion of the fluorinated polymer. In some embodiments, the fluorine component comprises a gaseous fluorinated polymer derived from a non-gaseous fluorinated polymer (e.g., a solid or a liquid phase fluorinated polymer). In some embodiments, the fluorinated polymer comprises a homopolymer or a copolymer. In some embodiments, the fluorinated polymer comprises a copolymer of at least one fluoroolefin monomer and optionally at least one non-fluorinated co-monomer. In some embodiments, the fluorinated polymer may be fluorinated (i.e., partially fluorinated), perfluorinated, or may include non-fluorine halogen atoms, such as, for example and without limitation, chlorine. In some embodiments, a molecular fluorine source may be liquid or solid at room temperature, but that vaporizes at the process temperatures disclosed herein. Non-limiting examples of fluoropolymers include, without limitation, at least one of the following: polymerized perfluoroalkylethylene having a C1 -C10 perfluoroalkyl group, polytetrafluoroethylene (PTFE), tetrafluoroethylene / perfluoro(alkyl vinyl ether) copolymer (PFA), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / perfluoro(alkyl alkenyl ether) / hexafluoropropylene copolymer (EPA), polyhexafluoropropylene, ethylene / tetrafluoroethylene copolymer (ETFE),poly trifluoroethylene, polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), polychlorotrifluoroethylene (PCTFE), ethylene / chlorotrifluoroethylene copolymer (ECTFE), or any combination thereof.

[0044] At step 110, in some embodiments, the method comprises contacting, under deposition conditions, the substrate with at least a second precursor to form a second coating on the ceramic substrate. In some embodiments, the deposition conditions comprise vapor deposition conditions, and the second precursor comprises a second vaporized precursor. In some embodiments, for example, the contacting comprises flowing the second vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises introducing the second vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises vaporizing a second precursor to obtain the second vaporized precursor. In some embodiments, the contacting comprises pumping the second vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises exposing the substrate to the second vaporized precursor. In some embodiments, the contacting comprises feeding the second vaporized precursor to a chamber containing the substrate. In some embodiments, the contacting comprises forming a second coating on the substrate.

[0045] The second precursor may comprise a precursor suitable for forming the second coating on the substrate. In some embodiments, the second vaporized precursor may comprise a vaporized precursor suitable for forming the second coating on the substrate. In some embodiments, the second vaporized precursor is derived from a solid precursor via a process for forming a vapor and / or gas. In some embodiments, the second vaporized precursor comprises at least one of a metalcontaining precursor, an organo-metallic precursor, or any combination thereof. In some embodiments, the second vaporized precursor comprises at least one of one of AlC , AI(CH3)3, AI(OCH(CH3)2), Al(acetylacetonate)s, or any combination thereof.

[0046] In some embodiments, the substrate is further contacted with at least one coreactant precursor. In some embodiments, the at least one co-reactant precursorcomprises at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor may be selected to obtain a desired film. In some embodiments, the at least one co-reactant precursor may comprise at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylene diamine, or any combination thereof. In some embodiments, the at least one co-reactant precursor may comprise at least one of H2, O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, a carboxylic acid, an alcohol, a diol, air, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprise at least one of methane, ethane, ethylene, acetylene, or any combination thereof. The obtaining may comprise obtaining a container or other vessel comprising the at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor may be obtained in a container or other vessel in which the at least one co-reactant precursor is to be vaporized. In some embodiments, the at least one co-reactant precursor is a vaporized co-reactant precursor. In some embodiments, the method further comprises an inert gas, such as, for example, at least one of argon, helium, nitrogen, or any combination thereof.

[0047] In some embodiments, the method comprises vaporizing a precursor. The vaporizing may comprise heating the precursor sufficient to obtain the vaporized precursor. In some embodiments, the vaporizing may comprise heating a container comprising the precursor. In some embodiments, the vaporizing may comprise heating the precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, the vaporizing may comprise heating a conduit for delivering the precursor, vaporized precursor, or any combination thereof to, for example, a deposition chamber. In some embodiments, the vaporizing may comprise operating a vapor delivery system comprising the precursor. In some embodiments, the vaporizing may comprise heating to a temperature sufficient to vaporize the precursor to obtain the vaporized precursor. In some embodiments, the vaporizing may comprise heating to a temperature below a decomposition temperature of at least one of the precursor, the vaporizedprecursor, or any combination thereof. In some embodiments, the precursor may be present in a gas phase, in which case this step is optional and not required. For example, the precursor may comprise the vaporized precursor.

[0048] In some embodiments, the method comprises vaporizing the at least one coreactant precursor. In some embodiments, the vaporizing may comprise heating the at least one co-reactant precursor sufficient to obtain the at least one vaporized co-reactant precursor. In some embodiments, the vaporizing may comprise heating a container comprising the at least one co-reactant precursor. In some embodiments, the vaporizing may comprise heating the at least one co-reactant precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, the vaporizing may comprise heating a conduit for delivering the at least one co-reactant precursor, the at least one vaporized coreactant precursor, or any combination thereof to, for example, a deposition chamber. In some embodiments, the vaporizing may comprise operating a vapor delivery system comprising the at least one co-reactant precursor. In some embodiments, the vaporizing may comprise heating to a temperature sufficient to vaporize the at least one co-reactant precursor to obtain the at least one vaporized co-reactant precursor. In some embodiments, the vaporizing may comprise heating to a temperature below a decomposition temperature of at least one of the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the at least one coreactant precursor may be present in a gas phase, in which case the step 108 is optional and not required. For example, the at least one co-reactant precursor may comprise the at least one vaporized co-reactant precursor.

[0049] The contacting may be performed in any system, apparatus, device, assembly, chamber thereof, or component thereof suitable for deposition processes (e.g., vapor deposition processes, among others), including, for example and without limitation, a chamber or a deposition chamber, among others. The second precursor and the at least one co-reactant precursor may be contacted with the substrate at the same time or at different times. For example, each of the second precursor, the at least one co-reactant precursor, and the substrate may bepresent in the deposition chamber at the same time. That is, in some embodiments, the contacting may comprise contemporaneous contacting or simultaneous contacting of the second precursor and the at least one co-reactant precursor with the substrate. Alternatively, each of the second precursor and the at least one co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, the contacting may comprise alternate and / or sequential contacting, in one or more cycles, of the second precursor with the substrate and subsequently contacting the at least one coreactant precursor with the substrate.

[0050] The deposition conditions may comprise conditions for vapor deposition processes. Examples of vapor deposition conditions include, without limitation, vapor deposition conditions for vapor deposition processes including at least one of a chemical vapor deposition (CVD) process, a physical vapor deposition process (PVD), a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclical chemical vapor deposition process (PECCVD), a flowable chemical vapor deposition process (FCVD), an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma-enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a plasma- enhanced chemical vapor deposition (PECVD) process, or any combination thereof.

[0051] The deposition conditions may comprise a deposition temperature. The deposition temperature may be a temperature less than the thermal decomposition temperature of at least one of the second precursor, the at least one co-reactant precursor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or avoid condensation of at least one of the second precursor, the at least one co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other vessel in which the substrate is contacted with the second precursor and the at least one co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of thesecond precursor, the at least one co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0052] The deposition temperature may be a temperature of 200 °C to 2500 °C. In some embodiments, the deposition temperature may be a temperature of 500 °C to 700 °C. For example, in some embodiments, the deposition temperature may be a temperature of 500 °C to 680 °C, 500 °C to 660 °C, 500 °C to 640 °C, 500 °C to 620 °C, 500 °C to 600 °C, 500 °C to 580 °C, 500 °C to 560 °C, 500 °C to 540 °C, 500 °C to 520 °C, 520 °C to 700 °C, 540 °C to 700 °C, 560 °C to 700 °C, 580 °C to 700 °C, 600 °C to 700 °C, 620 °C to 700 °C, 640 °C to 700 °C, 660 °C to 700 °C, or 680 °C to 700 °C. In other embodiments, the deposition temperature may be a temperature of greater than 200 °C to 2500 °C, such as, for example and without limitation, a temperature of 400 °C to 2000, 500 °C to 2000 °C, 550 °C to 2400 °C, 600 °C to 2400 °C, 625 °C to 2400 °C, 650 °C to 2400 °C, 675 °C to 2400 °C, 700 °C to 2400°C, 725 °C to 2400 °C, 750 °C to 2400 °C, 775 °C to 2400 °C, 800 °C to 2400 °C, 825 °C to 2400 °C, 850 °C to 2400 °C, 875 °C to 2400 °C, 900 °C to 2400 °C, 925 °C to 2400 °C, 950°C to 2400 °C, 975 °C to 2400 °C, 1000 °C to 2400 °C, 1025 °C to 2400 °C, 1050 °C to 2400 °C, 1075 °C to 2400 °C, 1 100 °C to 2400 °C, 1200 °C to 2400 °C, 1300 °C to 2400 °C, 1400 °C to 2400 °C, 1500 °C to 2400 °C, 1600 °C to 2400 °C, 1700 °C to 2400 °C, 1800 °C to 2400 °C, 1900 °C to 2400 °C, 2000 °C to 2400 °C, 2100 °C to 2400 °C, 2200 °C to 2400 °C, 2300 °C to 2400 °C, 500 °C to 2000 °C, 500 °C to 1900 °C, 500 °C to 1800 °C, 500 °C to 1700 °C, 500 °C to 1600 °C, 500 °C to 1500 °C, 500 °C to 1400 °C, 500 °C to 1300 °C, 500 °C to 1200 °C, 500 °C to 1 100 °C, 500 °C to 1000 °C, 500 °C to 1000 °C, 500 °C to 900 °C, or 500 °C to 800 °C.

[0053] The deposition conditions may comprise a deposition pressure. In some embodiments, the deposition pressure may comprise a vapor pressure of at least one of the second precursor, the at least one co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure may comprise a chamber pressure.

[0054] The deposition pressure may be a pressure of 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure of 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torrto 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In other embodiments, the deposition pressure may be a pressure of 1 Torr to 100 Torr, 5 Torr to 100 Torr, 10 Torr to 100 Torr, 15 Torr to 100 Torr, 20 Torr to100 Torr, 25 Torr to 100 Torr, 30 Torr to 100 Torr, 35 Torr to 100 Torr, 40 Torr to100 Torr, 45 Torr to 100 Torr, 50 Torr to 100 Torr, 55 Torr to 100 Torr, 60 Torr to100 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure of 1 mTorr to 100 mTorr, 1 mTorr to 90 mTorr, 1 mTorr to 80 mTorr, 1 mTorr to 70 mTorr, 1 mTorr to 60 mTorr, 1 mTorr to 50 mTorr, 1 mTorr to 40 mTorr, 1 mTorr to 30 mTorr, 1 mTorr to 20 mTorr, 1 mTorr to 10 mTorr, 100 mTorr to 300 mTorr, 150 mTorr to 300 mTorr, 200 mTorr to 300 mTorr, or 150 mTorr to 250 mTorr, or 150 mTorr to 225 mTorr.

[0055] In some embodiments, the second coating comprises at least one of a yttria, a yttrium oxide, a fluorinated yttrium oxide, an alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating comprises at least one of AI2O3, Y2O3, or any combination thereof. In some embodiments, the second coating comprises at least one of at least one of AI2O3, Y2O3, a fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating comprises at least one of a yttria, a yttrium oxide, a fluorinated yttrium oxide, an alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating is a ceramic coating.

[0056] In some embodiments, the second coating directly contacts the substrate. In some embodiments, the second coating fills at least one of the at least one defects present on the substrate. In some embodiments, the coated substrate has a surface roughness that is less than a surface roughness of the substrate without the second coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60% less than the surface roughness value of the substrate without the second coating, or any range or subrange between 5% and 60%. Insome embodiments, the surface roughness of the coated substrate is 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or 55% to 60% less than the surface roughness value of the substrate without the second coating.

[0057] In some embodiments, the coated substrate has a surface roughness value, Sa, of less than 1.3 pm. In some embodiments, the coated substrate has a surface roughness value, Sa, of 0.1 pm to 1 .3 pm, 0.1 pm to 1 .2 pm, 0.1 pm to 1 .1 pm, 0.1 pm to 1 pm, 0.1 pm to 0.9 pm, 0.1 pm to 0.8 pm, 0.1 pm to 0.7 pm, 0.1 pm to 0.6 pm, 0.1 pm to 0.5 pm, 0.1 pm to 0.4 pm, 0.1 pm to 0.3 pm, 0.1 pm to 0.2 pm, 0.2 pm to 1 .3 pm, 0.3 pm to 1 .3 pm, 0.4 pm to 1 .3 pm, 0.5 pm to 1 .3 pm, 0.6 pm to 1.3 pm, 0.7 pm to 1.3 pm, 0.8 pm to 1.3 pm, 0.9 pm to 1.3 pm, 1 pm to 1.3 pm, 1 .1 pm to 1 .3 pm, or 1 .2 pm to 1 .3 pm.

[0058] In some embodiments, the second coating is a non-sintered coating. In some embodiments, the second coating is same as the first coating. In some embodiments, the second coating is different from the first coating.

[0059] The second coating may have a thickness of 1 pm to 30 pm, or any range or subrange between 1 pm and 30 pm. In some embodiments, the second coating has a thickness of 1 pm to 29 pm, 1 pm to 28 pm, 1 pm to 27 pm, 1 pm to 26 pm, 1 pm to 25 pm, 1 pm to 24 pm, 1 pm to 23 pm, 1 pm to 22 pm, 1 pm to 21 pm, 1 pm to 20 pm, 1 pm to 19 pm, 1 pm to 18 pm, 1 pm to 17 pm, 1 pm to 16 pm, 1 pm to 15 pm, 1 pm to 14 pm, 1 pm to 13 pm, 1 pm to 12 pm, 1 pm to 11 pm, 1 pm to 10 pm, 1 pm to 9 pm, 1 pm to 8 pm, 1 pm to 7 pm, 1 pm to 6 pm, 1 pm to 5 pm, 1 pm to 4 pm, 1 pm to 3 pm, 1 pm to 2 pm, 2 pm to 30 pm, 3 pm to 30 pm, 4 pm to 30 pm, 5 pm to 30 pm, 6 pm to 30 pm, 7 pm to 30 pm, 8 pm to 30 pm, 9 pm to 30 pm, 10 pm to 30 pm, 11 pm to 30 pm, 12 pm to 30 pm, 13 pm to 30 pm, 14 pm to 30 pm, 15 pm to 30 pm, 16 pm to 30 pm, 17 pm to 30 pm, 18 pm to 30 pm, 19 pm to 30 pm, 20 pm to 30 pm, 21 pm to 30 pm, 22 pm to 30 pm, 23 pm to 30 pm, 24 pm to 30 pm, 25 pm to 30 pm, 26 pm to 30 pm, 27 pm to 30 pm, 28 pm to 30 pm, or 29 pm to 30 pm.

[0060] In some embodiments, the method 100 does not comprise a heat treatment step. In some embodiments, the method 100 does not comprise removing at least a portion of the substrate. In some embodiments, the removing comprises removal by a physical or mechanical force, such as, for example and without limitation, grinding, chipping, cutting, scraping, or otherwise using a mechanical tool to remove a portion of the substrate. In some embodiments, the method 100 comprises, prior to contacting the substrate with the first precursor, removing at least a portion of an existing coating from the substrate. In some embodiments, the existing coating comprises at least one of yttria, yttrium oxide, fluorinated yttrium oxide, alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

[0061] FIG. 2 is a schematic diagram of a method for making an article, according to some embodiments. As shown in FIG. 2, the method 200 comprises forming a chemical vapor deposition (OVD) coating on a substrate having at least one defect. In some embodiments, the method 200 comprises polishing the coating. In some embodiments, the method 200 comprises forming a physical vapor deposition (PVD) and / or chemical vapor deposition (OVD) coating on the substrate.

[0062] Some embodiments relate to articles formed according to the methods disclosed herein. In some embodiments, for example, an article comprises a substrate. The substrate may comprise a first coating located on the substrate. In some embodiments, the first coating directly contacts a surface of the substrate. In some embodiments, the first coating directly contacts a polished surface of the substrate. In some embodiments, the article comprises a second coating. In some embodiments, the second coating is located on the first coating. In some embodiments, the second coating is located on the substrate. In some embodiments, the second coating directly contacts the surface of the substrate. In some embodiments, the second coating directly contacts the polished surface of the substrate. In some embodiments, the second coating directly contacts a surface of the first coating. In some embodiments, the second coating directly contacts a polished surface of the first coating. In some embodiments, the second coating directly contacts a fluorinated surface. In some embodiments, a chambercomponent of a vapor deposition process, the chamber component comprising any one or more of the articles disclosed herein and / or articles formed according to the methods disclosed herein.

[0063] FIG. 3 is a FIB image of a substrate including a pit and having a coating formed thereon according to the exemplary methods as described herein.EXAMPLE 1

[0064] To prepare the samples alumina (AI2O3) substrates were coated with an alumina coating using CVD. Each of the alumina substrates, prior to being coated with the CVD alumina, had surface defects, such as, for example and without limitation, pores and cracks. The surface roughness of each of the alumina substrates was measured in three different locations, prior to being coated with CVD alumina and after being coated with CVD alumina. FIGS. 4A and FIGS. 4B show images taken with a laser confocal microscope at 50x magnification of some of the substrates before and after coating. The images include a 3D image of the surface as well as a profile graph. From FIG. 4A it is evident from the profile graph that the uncoated substrates include surface defects. The profile graph of FIG. 4B shows that after coating, the surface defects are no longer present.

[0065] The laser confocal microscope was also used to obtain surface roughness values of the samples before and after coating. The surface roughness values (microns) the alumina substrates are reported in Table 1 and Table 2 below.

[0066] As shown in the tables, surface roughness values improved by 30% to 60% after coating.

[0067] ASPECTS

[0068] Various Aspects are described below. It is to be understood that any one or more of the features recited in the following Aspect(s) can be combined with any one or more other Aspect(s).Aspect 1 . A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under vapor deposition conditions, the ceramic substrate with at least a first vaporized precursor to form a first coating on the ceramic substrate, wherein the ceramic substrate, when coated with the first coating, has a surface roughness value that is less than a surface roughness value of an uncoated ceramic substrate.Aspect 2. The method according to Aspect 1 , wherein the ceramic substrate comprises an alumina substrate.Aspect 3. The method according to any one of Aspects 1 -2, wherein the at least one defect comprises at least one of a pore, a pit, a scratch, an etch line, or any combination thereof.Aspect 4. The method according to any one of Aspects 1 -3, wherein the surface roughness value of the ceramic substrate, when coated with the first coating, is 5% to 60% less than the surface roughness value of the uncoated ceramic substrate.Aspect s. The method according to any one of Aspects 1 -4, wherein the ceramic substrate, when coated with the first coating, has a surface roughness value, Sa, of less than 1 .3 pm.Aspect s. The method according to any one of Aspects 1 -5, wherein the uncoated ceramic substrate has a surface roughness value, Sa, of 1.3 pm or greater.Aspect 7. The method according to any one of Aspects 1 -6, wherein the first coating comprises at least one of AI2O3, Y2O3, or any combination thereof.Aspect 8. The method according to any one of Aspects 1 -7, further comprising at least one of the following steps: polishing at least a portion of a surface of the ceramic substrate to obtain a ceramic substrate having a polished surface; contacting the ceramic substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the ceramic substrate; contacting, under vapor deposition conditions, the ceramic substrate with at least a second vaporized precursor to form a second coating on the ceramic substrate; or any combination thereof.Aspect 9. A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under vapor deposition conditions, the ceramic substrate with at least a first vaporized precursor to form a first coating on the ceramic substrate, wherein the ceramic substrate, when coated with the first coating, has a surface roughness value that is less than a surface roughness value of an uncoated ceramic substrate;contacting, under vapor deposition conditions, the ceramic substrate with at least a second vaporized precursor to form a second coating on the ceramic substrate.Aspect 10. The method according to Aspect 9, wherein the ceramic substrate comprises at least one of AI2O3, Y2O3, or any combination thereof.Aspect 11 . The method according to any one of Aspects 9-10, wherein the first coating comprises AI2O3, Y2O3, or any combination thereof.Aspect 12. The method according to any one of Aspects 9-11 , wherein the second coating comprises AI2O3, Y2O3, a fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.Aspect 13. A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under vapor deposition conditions, the ceramic substrate with at least a first vaporized precursor to form a first coating on the ceramic substrate, wherein the ceramic substrate, when coated with the first coating, has a surface roughness value that is less than a surface roughness value of an uncoated ceramic substrate; polishing at least a portion of a surface of the ceramic substrate to obtain a ceramic substrate having a polished surface; contacting the ceramic substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the ceramic substrate; and contacting, under vapor deposition conditions, the ceramic substrate with at least a second vaporized precursor to form a second coating on the ceramic substrate.Aspect 14. The method according to Aspect 13, wherein the ceramic substrate comprises an alumina substrate.Aspect 15. The method according to any one of Aspects 13-14, wherein the at least one defect comprises at least one of a pore, a pit, a scratch, an etch line, or any combination thereof.Aspect 16. The method according to any one of Aspects 13-15, wherein the surface roughness value of the ceramic substrate, when coated with the first coating, is 5% to 60% less than the surface roughness value of the uncoated ceramic substrate.Aspect 17. The method according to any one of Aspects 13-16, wherein the ceramic substrate, when coated with the first coating, has a surface roughness value, Sa, of less than 1 .3 pm.Aspect 18. The method according to any one of Aspects 13-17, wherein the uncoated ceramic substrate has a surface roughness value, Sa, of 1.3 pm or greater.Aspect 19. The method according to any one of Aspects 13-18, wherein the first coating comprises at least one of AI2O3, Y2O3, or any combination thereof.Aspect 20. The method according to any one of Aspects 13-19, wherein the second coating comprises at least one of AI2O3, Y2O3, a fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

[0069] It is to be understood that changes may be made in detail, especially in matters of the construction materials employed and the shape, size, and arrangement of parts without departing from the scope of the present disclosure. This Specification and the embodiments described are examples, with the true scope and spirit of the disclosure being indicated by the claims that follow.

Claims

CLAIMSWHAT IS CLAIMED IS:1 . A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under deposition conditions, the ceramic substrate with at least a first precursor to form a coated ceramic substrate comprising a first coating on the ceramic substrate, wherein the coated ceramic substrate has a surface roughness value that is less than a surface roughness value of the ceramic substrate without the first coating.

2. The method of claim 1 , wherein the ceramic substrate comprises an alumina substrate.

3. The method of claim 1 , wherein the at least one defect comprises at least one of a pore, a pit, a scratch, an etch line, or any combination thereof.

4. The method of claim 1 , wherein the surface roughness value of the coated ceramic substrate is 5% to 60% less than the surface roughness value of the ceramic substrate without the first coating.

5. The method of claim 1 , wherein the ceramic substrate, without the first coating, has a surface roughness value, Sa, of 0.05 pm to 1 pm.

6. The method of claim 1 , wherein the first coating comprises at least one of AI2O3, Y2O3, or any combination thereof.

7. The method of claim 1 , further comprising at least one of the following steps: polishing at least a portion of a surface of the ceramic substrate to obtain a ceramic substrate having a polished surface; contacting the ceramic substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the ceramic substrate;contacting, under deposition conditions, the ceramic substrate with at least a second precursor to form a second coated ceramic substrate comprising a second coating on the ceramic substrate; or any combination thereof.

8. A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under deposition conditions, the ceramic substrate with at least a first precursor to form a coated ceramic substrate comprising a first coating on the ceramic substrate, wherein the coated ceramic substrate has a surface roughness value that is less than a surface roughness value of the ceramic substrate without the first coating; and contacting, under deposition conditions, the ceramic substrate with at least a second precursor to form a second coated ceramic substrate comprising a second coating on the ceramic substrate.

9. The method of claim 8, wherein the ceramic substrate comprises at least one of AI2O3, Y2O3, or any combination thereof.

10. The method of claim 8, wherein the first coating comprises AI2O3, Y2O3, or any combination thereof.1 1 . The method of claim 8, wherein the second coating comprises AI2O3, Y2O3, a fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

12. A method for forming a ceramic article, the method comprising: obtaining a ceramic substrate having at least one defect; and contacting, under deposition conditions, the ceramic substrate with at least a first precursor to form a coated ceramic substrate comprising a first coating on the ceramic substrate,wherein the coated ceramic substrate has a surface roughness value that is less than a surface roughness value of the ceramic substrate without the first coating; polishing at least a portion of a surface of the ceramic substrate to obtain a ceramic substrate having a polished surface; contacting the ceramic substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the ceramic substrate; and contacting, under deposition conditions, the ceramic substrate with at least a second precursor to form a second coated ceramic substrate comprising a second coating on the ceramic substrate.

13. The method of claim 12, wherein the ceramic substrate comprises an alumina substrate.

14. The method of claim 12, wherein the at least one defect comprises at least one of a pore, a pit, a scratch, an etch line, or any combination thereof.

15. The method of claim 12, wherein the surface roughness value of the coated ceramic substrate is 5% to 60% less than the surface roughness value of the ceramic substrate without the first coating and / or second coating.

16. The method of claim 12, wherein the ceramic substrate, without the first coating, has a surface roughness value, Sa, of 0.05 pm to 1 pm.

17. The method of claim 12, wherein the first coating comprises at least one of AI2O3, Y2O3, or any combination thereof.

18. The method of claim 12, wherein the second coating comprises at least one of AI2O3, Y2O3, a fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

19. An article comprising: a coated ceramic substrate comprising: a ceramic substrate having at least one defect; anda coating located on the ceramic substrate, wherein the coated ceramic substrate has a surface roughness value that is less than a surface roughness value of the ceramic substrate without the coating.

Images