Light-emitting substrate, preparation method therefor, and display apparatus

Abstract

A light-emitting substrate (1100), comprising a driving backplane (100), a device stacking layer (200), isolation structures (300), second electrodes (400), and a color conversion layer (500). The device stacking layer (200) comprises a bonding layer (210), a first electrode layer (220), a first semiconductor layer (230), a light-emitting layer (240) and a second semiconductor layer (250) which are stacked. The bonding layer (210) is bonded to the driving backplane (100). The isolation structures (300) penetrate through the bonding layer (210), the first electrode layer (220), the first semiconductor layer (230) and the light-emitting layer (240), extend into the second semiconductor layer (250), and divide the device stacking layer (200) into a plurality of light-emitting devices (260). The surface of the second semiconductor layer (250) away from the driving backplane (100) is provided with first recesses (251), the first recesses (251) divide the second semiconductor layer (250) into a plurality of colored areas (600), and the second electrodes (400) are arranged in the first recesses (251). Each colored area (600) is provided with a plurality of second recesses (252), and the color conversion layer (500) is arranged in the plurality of second recesses (252). One light-emitting device (260) corresponds to one colored area (600), the orthographic projection of each colored area (600) on the driving backplane (100) at least partially overlaps the orthographic projection of a light-emitting device (260) corresponding to the colored area (600) on the driving backplane (100), and one light-emitting device (260) is connected to one driving circuit.

Description

Luminescent substrate, preparation method thereof, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a preparation method thereof, and a display device. Background Art

[0002] With the development of light-emitting diode (LED) technology, micro-LEDs (Micro-LEDs) have gained widespread application. Micro-LEDs refer to LED chips with a size of less than 100μm. They offer excellent performance in terms of brightness, lifespan, contrast, response time, energy consumption, viewing angle, and resolution. They also feature self-luminescence, a simple structure, a compact size, and energy efficiency, making them considered the next generation of display technology.

[0003] Summary of the Invention

[0004] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a driving backplane, a device stack, an isolation structure, a second electrode, and a color conversion layer. The driving backplane includes multiple driving circuits. The device stack includes a bonding layer, a first electrode layer, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, stacked in a direction away from the driving backplane. The bonding layer is bonded to the driving backplane. In a direction perpendicular to and away from the driving backplane, the isolation structure penetrates the bonding layer, the first electrode layer, the first semiconductor layer, and the light-emitting layer, and extends into the second semiconductor layer. The isolation structure separates the device stack into multiple light-emitting devices. A first groove is defined on a surface of the second semiconductor layer facing away from the driving backplane. The first groove separates the second semiconductor layer into multiple coloring regions. At least a portion of the second electrode is disposed within the first groove. At least one coloring region is defined by multiple second grooves. At least a portion of the color conversion layer is disposed within the multiple second grooves. One light emitting device corresponds to one coloring area, the orthographic projection of the coloring area on the driving backplane and the orthographic projection of the light emitting device corresponding to the coloring area on the driving backplane at least partially overlap, and one light emitting device is connected to one driving circuit.

[0005] In some embodiments, the plurality of second grooves are distributed in an array, and the structures of the plurality of second grooves are substantially the same.

[0006] In some embodiments, at least two second grooves have different opening sizes; and / or at least two second grooves have different opening shapes; and / or at least two second grooves have different depths along a direction perpendicular to the second semiconductor layer.

[0007] In some embodiments, the plurality of tinting regions include a plurality of first tinting regions, a plurality of second tinting regions, and a plurality of third tinting regions. The color conversion layer includes a plurality of first color conversion portions, a plurality of second color conversion portions, and a plurality of third color conversion portions. A first color conversion portion is disposed within a first tinting region, and is configured to convert light emitted by the light-emitting device into a first color. A second color conversion portion is disposed within a second tinting region, and is configured to convert light emitted by the light-emitting device into a second color. A third color conversion portion is disposed within a third tinting region, and is configured to convert light emitted by the light-emitting device into a third color.

[0008] In some embodiments, the color conversion layer includes multiple fourth color conversion parts, and a fourth color conversion part is provided in each of the multiple second grooves of a colored area. The multiple fourth color conversion parts are configured to convert light emitted by the multiple light-emitting devices into a fourth color.

[0009] In some embodiments, the material of the second electrode includes a light-reflecting material.

[0010] In some embodiments, along a direction perpendicular to the driving backplane and close to the driving backplane, the second electrode is close to one end of the driving backplane and extends out from one end of the color conversion layer close to the driving backplane; and / or, along a direction perpendicular to the driving backplane and away from the driving backplane, the second electrode is away from one end of the driving backplane and extends out from one end of the color conversion layer away from the driving backplane.

[0011] In some embodiments, the second electrode includes a stacked structure and a pad layer structure. The stacked structure includes a titanium layer, an aluminum layer, a nickel layer, and a gold layer stacked in sequence in a direction away from the driver backplate; or the stacked structure includes a chromium layer, a platinum layer, and a gold layer stacked in sequence in a direction away from the driver backplate. The pad layer structure is disposed on a side of the stacked structure away from the driver backplate, and the pad layer structure is made of at least one of tin, silver, and copper.

[0012] In some embodiments, the isolation structure includes a third groove and an insulating layer and a reflective layer stacked on the sidewalls and bottom wall of the third groove. The third groove, in a direction away from the driving backplate, penetrates the bonding layer, the first electrode layer, the first semiconductor layer, and the light-emitting layer, and extends into the second semiconductor layer. The insulating layer is located between the reflective layer and the third groove, and the reflective layer is configured to reflect light directed toward the reflective layer.

[0013] In some embodiments, the third groove includes a plurality of first sub-grooves and a plurality of second sub-grooves. The plurality of first sub-grooves are spaced apart along a first direction and extend along a second direction. The plurality of second sub-grooves are spaced apart along the second direction and extend along the first direction. The plurality of first sub-grooves and the plurality of second sub-grooves intersect to form a grid structure, with each grid defining a light-emitting device. The first direction intersects the second direction.

[0014] In some embodiments, along a direction perpendicular to the sidewalls of the third groove, two portions of the reflective layer covering two opposite sidewalls of the third groove have a first interval.

[0015] In some embodiments, along a direction perpendicular to the sidewall of the third groove, a size of the third groove is 2 μm to 3 μm; and / or a thickness of the insulating layer is 0.5 μm to 1 μm; and / or a thickness of the reflective layer is 50 nm to 150 nm.

[0016] In some embodiments, the orthographic projection of the second electrode on the driving backplane is located within the range of the orthographic projection of the isolation structure on the driving backplane.

[0017] In some embodiments, along a direction perpendicular to the driving backplate, a second gap is formed between the second electrode and the isolation structure.

[0018] In some embodiments, the second electrode includes a plurality of first sub-sections and a plurality of second sub-sections. The plurality of first sub-sections are spaced apart along a first direction and each extend along a second direction. The plurality of second sub-sections are spaced apart along the second direction and each extend along the first direction. The plurality of first sub-sections and the plurality of second sub-sections intersect to form a grid structure, with each grid defining a colored region. The first direction intersects the second direction.

[0019] In some embodiments, the color conversion layer has a size of 3 μm to 5 μm along a direction perpendicular to the driving backplane. Furthermore, the light-emitting devices have a size of 3 μm to 5 μm along a row direction in which the light-emitting devices are arranged, and have a size of 3 μm to 5 μm along a column direction in which the light-emitting devices are arranged.

[0020] In another aspect, a display device is provided. The display device includes a driving circuit board and a light-emitting substrate according to any one of the above embodiments. The driving circuit board is connected to the light-emitting substrate and configured to transmit a control signal to the light-emitting substrate.

[0021] In another aspect, a method for preparing a light-emitting substrate is provided. The method includes: forming a device stack layer on a substrate; forming an isolation structure on the device stack layer; providing a driving backplane and bonding the device stack layer to the driving backplane; removing the substrate; forming multiple second grooves on a surface of the second semiconductor layer facing away from the driving backplane; forming a first groove on a surface of the second semiconductor layer facing away from the driving backplane; forming a color conversion layer within the multiple second grooves; and forming a second electrode within the first groove. The device stack layer includes a second semiconductor layer, a light-emitting layer, a first semiconductor layer, a first electrode layer, and a bonding layer, sequentially arranged away from the substrate. The isolation structure penetrates the bonding layer, the first electrode layer, the first semiconductor layer, and the light-emitting layer and extends into the second semiconductor layer, separating the device stack layer into multiple light-emitting devices. The driving backplane includes multiple driving circuits, the bonding layer of the device stack layer is bonded to the driving backplane, and each light-emitting device is connected to one driving circuit. The second semiconductor layer is exposed, and the second semiconductor layer includes multiple coloring regions arranged in an array, and an isolation region is located between any adjacent coloring regions. A portion of the plurality of second grooves is located in the plurality of colored regions, and a portion of the second grooves is located in the isolation region. The first groove is located in the isolation region.

[0022] In some embodiments, forming an isolation structure on the device stack includes: forming a third groove on the device stack; and sequentially forming an insulating layer and a reflective layer within the third groove. The third groove penetrates the bonding layer, the first electrode layer, the first semiconductor layer, and the light-emitting layer, and extends into the second semiconductor layer. The third groove separates the device stack into a plurality of light-emitting devices. The insulating layer covers the sidewalls and bottom wall of the groove, and the reflective layer covers the surface of the insulating layer away from the sidewalls and bottom wall of the third groove, leaving the surface of the device stack away from the substrate exposed.

[0023] In some embodiments, forming a plurality of second grooves on a surface of the second semiconductor layer remote from the driver backplate includes: etching the second semiconductor layer using an electrochemical etching process to form the plurality of second grooves on the surface of the second semiconductor layer remote from the driver backplate. At least two of the second grooves have different opening sizes; and / or at least two of the second grooves have different opening shapes; and / or at least two of the second grooves have different depths along a direction perpendicular to the second semiconductor layer.

[0024] In some embodiments, forming a plurality of second grooves on a surface of the second semiconductor layer away from the driver backplate includes: forming a first initial mask layer on the second semiconductor layer; forming an embossed pattern layer on the initial mask layer; etching the initial mask layer using the embossed pattern layer as a mask to form a first mask layer; and etching the second semiconductor layer using the first mask layer as a mask to form the plurality of second grooves on the second semiconductor layer. The first initial mask layer covers the surface of the second semiconductor layer away from the driver backplate. The embossed pattern layer includes a plurality of embossed patterns, each embossed pattern exposing a portion of the first initial mask layer.

[0025] In some embodiments, the plurality of colored regions are configured to convert light emitted by the plurality of light-emitting devices into light of the same color. After forming a plurality of second grooves on a surface of the second semiconductor layer remote from the driving backplane, a color conversion layer is first formed within the plurality of second grooves, and then a first groove is formed on a surface of the second semiconductor layer remote from the driving backplane.

[0026] In some embodiments, forming the color conversion layer within the plurality of second grooves includes forming the color conversion layer within the plurality of second grooves using one of a suspension coating, a drop coating, and a dipping process. Forming the first groove on the surface of the second semiconductor layer away from the driving backplane includes forming a second mask layer on the surface of the second semiconductor layer away from the driving backplane, the second mask layer covering the plurality of colored regions and exposing the isolation region; using the second mask layer as a mask, removing portions of the second semiconductor layer and the color conversion layer within the isolation region to form the first groove; and removing the second mask layer.

[0027] In some embodiments, the color conversion layer includes a plurality of first color conversion portions, a plurality of second color conversion portions, and a plurality of third color conversion portions. The plurality of first color conversion portions are configured to convert light emitted by the light-emitting device into a first color, the plurality of second color conversion portions are configured to convert light emitted by the light-emitting device into a second color, and the plurality of third color conversion portions are configured to convert light emitted by the light-emitting device into a third color. After forming a plurality of second grooves on a surface of the second semiconductor layer away from the driver backplane, a first groove is first formed on the surface of the second semiconductor layer away from the driver backplane, and then the color conversion layer is formed within the plurality of second grooves.

[0028] In some embodiments, forming the first groove on the surface of the second semiconductor layer away from the driving backplate includes: forming a third mask layer on a side of the second semiconductor layer away from the driving backplate; using the third mask layer as a mask, removing a portion of the second semiconductor layer located within the isolation region to form the first groove; removing the third mask layer; and forming a third mask layer on a side of the second semiconductor layer away from the driving backplate, the third mask layer covering the plurality of colored regions and exposing the isolation region.

[0029] In some embodiments, the plurality of coloring regions include a plurality of first coloring regions, a plurality of second coloring regions, and a plurality of third coloring regions; forming the color conversion layer within the plurality of second grooves includes: forming a fourth mask layer on a side of the second semiconductor layer remote from the driving backplate; the fourth mask layer covers the first grooves, the plurality of second coloring regions, and the plurality of third coloring regions, while exposing the plurality of first coloring regions. A first color conversion layer is formed on a surface of the fourth mask layer remote from the driving backplate and within the first coloring regions. A portion of the first color conversion layer located on a surface of the fourth mask layer remote from the driving backplate is removed to form the plurality of first coloring portions, and the fourth mask layer is removed. A fifth mask layer is formed on a side of the second semiconductor layer remote from the driving backplate, covering the first grooves, the plurality of first coloring regions, and the plurality of third coloring regions, while exposing the plurality of second coloring regions. A second color conversion layer is formed on a surface of the fifth mask layer remote from the driving backplate and within the second coloring regions. A portion of the second color conversion layer located on a surface of the fifth mask layer remote from the driving backplate is removed to form the plurality of second coloring portions, and the fifth mask layer is removed. A sixth mask layer is formed on a side of the second semiconductor layer remote from the driving backplane, the sixth mask layer covering the first groove, the plurality of first colored regions, and the plurality of second colored regions, while exposing the plurality of third colored regions. A third color conversion layer is formed on a surface of the sixth mask layer remote from the driving backplane and within the third colored regions. The portion of the third color conversion layer located on the surface of the sixth mask layer remote from the driving backplane is removed to form the plurality of third colored portions, and the sixth mask layer is then removed.

[0030] In some embodiments, before forming the color conversion layer in the second grooves, the preparation method further includes: performing surface treatment on the plurality of second grooves to increase the adsorption force between the material of the color conversion layer and the second grooves. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and do not limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, etc. involved in the embodiments of the present disclosure.

[0032] FIG1 is a structural diagram of a display device according to some embodiments;

[0033] FIG2 is a structural diagram of a light-emitting substrate according to some embodiments;

[0034] FIG3 is a top view structural diagram of a light emitting substrate according to some embodiments;

[0035] FIG4A is a planar scanning electron microscope image of a second groove according to some embodiments;

[0036] FIG4B is a scanning electron microscope image of a cross-section of a second groove according to some embodiments;

[0037] FIG5 is another structural diagram of a light-emitting substrate according to some embodiments;

[0038] FIG6A is a planar scanning electron microscope image of a second groove according to some embodiments;

[0039] FIG6B is a scanning electron microscope image of a cross-section of a second groove according to some embodiments;

[0040] FIG7 is another structural diagram of a light-emitting substrate according to some embodiments;

[0041] FIG8 is a structural diagram of a second electrode according to some embodiments;

[0042] FIG9 is another structural diagram of a light emitting substrate according to some embodiments;

[0043] FIG10 is another structural diagram of a light emitting substrate according to some embodiments;

[0044] FIG11 is a structural diagram of an isolation structure according to some embodiments;

[0045] FIG12 is another structural diagram of a light emitting substrate according to some embodiments;

[0046] FIG13 is a flow chart of preparing a light-emitting substrate according to some embodiments;

[0047] 14 to 46 are process diagrams for preparing a light-emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0048] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0049] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0050] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0051] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0052] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0053] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0054] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0055] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0056] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0057] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0058] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0059] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0060] The related art provides a display device, including a driving backplane, a plurality of LED chips arranged on the driving backplane, and a color conversion layer (quantum dot film) arranged on the side of the LED chips away from the driving backplane. The plurality of LED chips can be transferred to the driving backplane by mass transfer technology (Mass Transfer Technology), and the plurality of LED chips can emit light of the same color (for example, blue). The color conversion layer can convert the light emitted by the plurality of LED chips into different colors, so that the display device can achieve color display (only partial colors can be displayed) or full-color display (all colors can be displayed). On the one hand, in order for the color conversion layer to achieve the expected color conversion efficiency, the thickness of the color conversion layer is relatively large, usually around 10μm, which is not conducive to the thinness of the display device, and the risk of cross-color between adjacent LED chips is high; on the other hand, the color conversion layer is usually prepared by inkjet printing process. Due to the resolution limitation of inkjet printer technology, the resolution of the color conversion layer is approximately 500PPI (English: Pixels Per Inch), which is not conducive to improving the resolution of the display device.

[0061] In order to solve the above technical problems, referring to FIG1 , an embodiment of the present disclosure provides a display device 1000 , which can be any device that displays either moving (eg, video) or fixed (eg, still images) and either text or images.

[0062] For example, the display device 1000 may be a mobile phone, a wireless device, a personal digital assistant (PDA), a wearable device, an augmented reality (AR) device, a virtual reality (VR) device, a handheld or portable computer, a GPS receiver / navigator, a camera, an MP4 video player, a video camera, a game console, a watch, a clock, a calculator, a television monitor, a flat-panel display, a computer monitor, an automotive display (e.g., an odometer display), a cockpit controller and / or display, a display of a camera view (e.g., a display of a rearview camera in a vehicle), an electronic photo, an electronic billboard or sign, a projector, packaging, and an aesthetic structure (e.g., a display of an image of a piece of jewelry), etc. For example, as shown in FIG1 , the display device 1000 may be a mobile phone.

[0063] Referring to Figure 2 , the display device 1000 includes a light-emitting substrate 1100 and a driver circuit board (not shown). The driver circuit board is connected to the light-emitting substrate 1100 and is configured to transmit control signals to the light-emitting substrate 1100 to drive the light-emitting substrate 1100 to emit light. In addition, the display device 1000 may also include a touch structure, an under-screen camera, and an under-screen fingerprint recognition sensor, enabling the display device 1000 to implement various different functions such as touch, photo taking, video recording, fingerprint recognition, or facial recognition, which are not specifically limited here.

[0064] 2 , the light emitting substrate 1100 may include a driving backplane 100 , a device stacking layer 200 , an isolation structure 300 , a second electrode 400 and a color conversion layer 500 .

[0065] In some embodiments, the driver backplane 100 may be, for example, a backplane in a backlight module of a liquid crystal display (LCD). In this case, the light-emitting substrate 1100 may serve as the backlight source in the LCD. The display device also includes a liquid crystal display panel, which is disposed on the light-emitting side of the light-emitting substrate. The light-emitting substrate 1100 is used to provide backlight for the LCD panel, which can adjust the intensity (grayscale) of light passing through the LCD panel to display an image.

[0066] In other embodiments, the driving backplane 100 may be a display backplane, for example. In this case, the light-emitting substrate 1100 may directly serve as an LED display device, for example, a Micro LED display device.

[0067] 2 , the device stack 200 includes a bonding layer 210, a first electrode layer 220, a first semiconductor layer 230, a light emitting layer 240, and a second semiconductor layer 250 stacked in a direction away from the driving backplane 100. The bonding layer 210 is bonded to the driving backplane 100.

[0068] In some embodiments, the bonding layer 210 is used to bond to the driving backplane 100. The bonding layer 210 may be made of molybdenum-titanium-nickel alloy (MTD) or gold (Au). The first electrode layer 220 may be made of a transparent conductive material or a metal material. The transparent conductive material may be indium tin oxide (ITO). The metal material may be at least one of gold, silver, copper, titanium, and aluminum.

[0069] In a specific example, the bonding layer 210 can be made of gold, and the thickness of the bonding layer 210 ranges from 1 μm to 2 μm. For example, the bonding layer 210 can be 1 μm, 1.3 μm, 1.5 μm, 1.7 μm, or 2 μm. The bonding layer 210 can reflect light emitted by the light-emitting layer 240, so that as much light as possible is emitted from the side of the device stack layer 200 away from the driving backplane 100. The first electrode layer 220 can be made of ITO, and the thickness of the first electrode layer 220 ranges from 100 nm to 140 nm. For example, the thickness of the first electrode layer 220 can be 100 nm, 120 nm, 135 nm, or 140 nm.

[0070] The material of the first semiconductor layer 230 can be a P-type semiconductor material, and accordingly, the material of the second semiconductor layer 250 can be an N-type semiconductor material. Alternatively, the material of the first semiconductor layer 230 can be an N-type semiconductor material, and accordingly, the material of the second semiconductor layer 250 can be a P-type semiconductor material. The materials of the first semiconductor layer 230 and the second semiconductor layer 250 include a variety of materials, which can be flexibly selected according to actual needs. For example, the intrinsic semiconductor material in the first semiconductor layer 230 and the second semiconductor layer 250 is the same, and can be any one of GaN, gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), and aluminum gallium indium phosphide (AlGaInP). The intrinsic semiconductor material of one of the first semiconductor layer 230 and the second semiconductor layer 250 is P-type doped to form a P-type semiconductor material, and the intrinsic semiconductor material of the other is N-type doped to form an N-type semiconductor material. A PN junction can be formed between the first semiconductor layer 230 and the second semiconductor layer 250. The light emitting layer 240 may be a multiple quantum well layer (MQW). For example, the material of the light emitting layer 240 may be gallium nitride (GaN). The first semiconductor layer 230, the light emitting layer 240, and the second semiconductor layer 250 may also be referred to as an epitaxial structure.

[0071] In a specific embodiment, the material of the first semiconductor layer 230 is P-type doped gallium nitride (P-GaN), and the thickness of the first semiconductor layer 230 may be 0.1 μm to 0.2 μm. For example, the thickness of the first semiconductor layer 230 may be 0.1 μm, 0.15 μm, 0.18 μm, or 0.2 μm. The material of the light-emitting layer 240 is gallium nitride, and the thickness of the light-emitting layer 240 may be 0.1 μm to 0.15 μm. For example, the thickness of the light-emitting layer 240 may be 0.1 μm, 0.12 μm, 0.14 μm, or 0.15 μm. The material of the second semiconductor layer 250 is N-type doped gallium nitride (N-GaN), and the thickness of the second semiconductor layer 250 is 3 μm to 5 μm. For example, the thickness of the second semiconductor layer 250 is 3 μm, 3.5 μm, 4 μm, 4.8 μm, or 5 μm.

[0072] Continuing with FIG. 2 , in a direction perpendicular to the driving backplane 100 and away from the driving backplane 100 (from bottom to top in FIG. 2 ), the isolation structure 300 penetrates the bonding layer 210, the first electrode layer 220, the first semiconductor layer 230, and the light-emitting layer 240, and extends into the second semiconductor layer 250. The isolation structure 300 separates the device stack 200 into a plurality of light-emitting devices 260. Each light-emitting device 260 may include a bonding pattern 211 located on the bonding layer 210, a first electrode pattern 221 located on the first electrode layer 220, a first semiconductor pattern 231 located on the first semiconductor layer 230, a light-emitting pattern 241 located on the light-emitting layer 240, and a second semiconductor pattern 253 located on the second semiconductor layer 250. The bonding pattern 211 of each light-emitting device 260 is bonded (connected) to a driving circuit of the driving backplane 100, so that each driving circuit drives each light-emitting device 260 to emit light.

[0073] It is understood that the isolation structure 300 separates the bonding layer 210 into a plurality of mutually separated bonding patterns 211. That is, the bonding layer 210 includes the plurality of (all) bonding patterns 211 included in the plurality of (all) light-emitting devices 260. Similarly, the first electrode layer 220 includes a plurality of mutually separated first electrode patterns 221, the first semiconductor layer 230 includes a plurality of mutually separated first semiconductor patterns 231, and the light-emitting layer 240 includes a plurality of light-emitting patterns 241. The second semiconductor pattern 253 refers to the portion of the second semiconductor layer 250 that overlaps with the projection of the light-emitting pattern 241. That is, in the same light-emitting device 260, the orthographic projection of the second semiconductor pattern 253 on the driver backplane 100 overlaps with the orthographic projection of the light-emitting pattern 241 on the driver backplane 100.

[0074] The isolation structure 300 does not penetrate the second semiconductor layer 250, and the second semiconductor patterns 253 of the multiple light-emitting devices 260 are interconnected as a whole. In other words, the isolation structure 300 does not separate the device stack layer 200 into independent light-emitting devices 260. As a result, the multiple light-emitting devices 260 do not require mass transfer technology to be transferred to the driver backplane 100. For example, the device stack layer 200 can be bonded as a whole through high-precision alignment bonding, which helps reduce the difficulty of manufacturing the light-emitting substrate 1100.

[0075] It is understood that when different voltages are applied to the first semiconductor pattern 231 and the second semiconductor pattern 253 of a light-emitting device 260, thereby forming an electric field between the first semiconductor pattern 231 and the second semiconductor pattern 253, minority carriers and majority carriers can recombine in the light-emitting pattern 241 and release the excess energy as light, thereby converting electrical energy into light energy. The multiple second semiconductor patterns 253 of the multiple light-emitting devices 260 are interconnected as a whole, so the voltages applied to the multiple second semiconductor patterns 253 are equal. The driving circuit on the driving backplane 100 is electrically connected to the first semiconductor pattern 231 via the bonding pattern 211 and the first electrode pattern 221. The driving backplane 100 can apply the same or different voltages to the first semiconductor pattern 231 of different light-emitting devices 260, thereby driving the different light-emitting devices 260 to emit light of the same or different intensities. The light emitting patterns 241 of the plurality of light emitting devices 260 are made of the same material. Based on this, the plurality of light emitting devices 260 can emit light of the same color. For example, the plurality of light emitting devices 260 all emit blue light.

[0076] 2 and 3 , a first groove 251 is provided on the surface of the second semiconductor layer 250 away from the driving backplane 100 (the upper surface of the second semiconductor layer 250 in FIG. 2 ). The first groove 251 separates the second semiconductor layer 250 into a plurality of colored regions 600. At least a portion of the second electrode 400 is disposed within the first groove 251, and the second electrode 400 is connected to the second semiconductor layer 250 so that a voltage is applied to the second semiconductor layer 250 through the second electrode 400. It is understood that since the second electrode 400 is disposed within the first groove 251, in the drawing shown in FIG. 2 , a portion of the boundary of the second electrode 400 (the boundary of the portion located within the first groove 251) coincides with the boundary of the first groove 251.

[0077] 2 , a light-emitting device 260 corresponds to a tinting area 600 , and the orthographic projection of the tinting area 600 on the driver backplane 100 and the orthographic projection of the light-emitting device 260 corresponding to the tinting area 600 on the driver backplane 100 at least partially overlap, so that the light emitted by the light-emitting device 260 can be directed toward the tinting area 600 corresponding to the light-emitting device 260 and emitted after color conversion by the color conversion layer in the tinting area 600.

[0078] At least one coloring region 600 is provided with a plurality of second grooves 252, and the plurality of second grooves 252 are provided on the surface of the second semiconductor layer 250 away from the driving backplane 100. Exemplarily, the plurality of coloring regions 600 are provided with a plurality of second grooves 252, that is, each coloring region 600 is provided with a plurality of second grooves 252.

[0079] In some embodiments, referring to Figures 2, 4A, and 4B simultaneously, multiple second grooves 252 are distributed in an array, and the structures of the multiple second grooves 252 are substantially the same. In other words, the multiple second grooves 252 are evenly distributed, and the opening size, opening shape, and depth along the direction perpendicular to the second semiconductor 250 of different second grooves 252 are all substantially the same. In this way, the multiple color conversion blocks 501 of the color conversion layer 500 are evenly distributed in density, and the sizes and structures of the different color conversion blocks are all the same, which can improve the uniformity of color conversion in different coloring areas. It should be noted that in Figures 4A and 4B, the opening shape of the second groove 252 is circular. In other embodiments, the opening shape of the second groove 252 can also be rectangular, elliptical, or other shapes, and the embodiments of the present disclosure are not specifically limited to this.

[0080] In other embodiments, referring to Figures 5, 6A, and 6B, at least two of the plurality of second grooves 252 have different opening sizes; and / or at least two of the second grooves 252 have different opening shapes; and / or at least two of the second grooves 252 have different depths along a direction perpendicular to the second semiconductor layer 250. In other words, the structures of some of the plurality of second grooves 252 are not completely consistent, i.e., the structures of the plurality of second grooves 252 are irregular and their distribution is haphazard. In this way, an electrochemical etching process can be used to form the plurality of second grooves 252, which simplifies the preparation process of the second grooves 252, reduces the difficulty of preparing the second grooves 252, and reduces the production cost of the light-emitting substrate 1100.

[0081] 6A and 6B , at least two second grooves 252 have different opening sizes, at least two second grooves have different opening shapes, and at least two second grooves 252 have different depths along a direction perpendicular to the second semiconductor layer 250 .

[0082] As shown in FIG5 , the color conversion layer 500 is disposed within multiple second grooves 252 . Light is refracted and reflected at the interface between the second semiconductor layer 250 and the color conversion layer 500 . A portion of the color conversion layer 500 located within a second groove 252 is referred to as a color conversion block 501 . When the light-emitting substrate 1100 is in operation, light emitted by the light-emitting device 260 is directed toward the tinting region 600 corresponding to the light-emitting device 260 . As the light passes through the color conversion layer 500 within the tinting region 600 , it is reflected and refracted multiple times within the multiple color conversion blocks 501 and the second semiconductor layer 250 . This increases the optical path length of the light in the color conversion layer 500 , enhances the light absorption efficiency of the color conversion layer 500 , and improves the color conversion efficiency of the color conversion layer 500 . Furthermore, without reducing the color conversion efficiency of the color conversion layer 500 , the thickness of the color conversion layer 500 can be reduced, which facilitates a reduction in the thickness of the light-emitting substrate 1100 and facilitates a thinner and lighter display device 1000 .

[0083] In some embodiments, as shown in Figures 2 and 5 , the color conversion layer 500 has a dimension D6 perpendicular to the driving backplane 100. The value of D6 ranges from 3 μm to 5 μm, meaning the thickness of the color conversion layer 500 is 3 μm to 5 μm. Compared to the quantum dot film of the related art (approximately 10 μm), the thickness of the color conversion layer 500 can be significantly reduced, facilitating a thinner and lighter light-emitting substrate 1100. For example, the value of D6 can be 3 μm, 3.5 μm, 4 μm, 4.6 μm, or 5 μm, etc., which are not listed in detail in the embodiments of the present disclosure.

[0084] It should be noted that, as shown in FIG. 5 , when at least two second grooves 252 have different depths among the plurality of second grooves 252 , the thickness of the color conversion layer 500 may be the average thickness of the color conversion layer 500 , ie, the average thickness of the plurality of color conversion blocks 501 .

[0085] Color conversion layer 500 includes wavelength conversion materials, such as cadmium quantum dots, indium quantum dots, perovskite quantum dots, rare earth phosphors, and organic fluorescent materials. Leveraging their wavelength conversion properties, they can convert light emitted by light-emitting device 260 into other colors, enabling multi-color or even full-color displays. For example, color conversion layer 500 is made of quantum dots (QDs). For example, if light-emitting device 260 emits blue light, color conversion layer 500 can convert the blue light into red or green.

[0086] It is understood that the materials of the color conversion layer 500 in the multiple tinting regions 600 can be identical to convert the light emitted by the multiple light-emitting devices 260 into light of the same color for emission. Alternatively, the materials of the color conversion layer 500 in at least some of the tinting regions 600 can be different to convert the light emitted by the multiple light-emitting devices 260 into light of different colors for emission.

[0087] In some embodiments, referring to FIG. 7 , the plurality of coloring regions 600 include a plurality of first coloring regions 610, a plurality of second coloring regions 620, and a plurality of third coloring regions 630. The color conversion layer 500 includes a plurality of first color conversion regions 510, a plurality of second color conversion regions 520, and a plurality of third color conversion regions 530. In FIG. 7 , different fill patterns represent different color conversion regions. FIG. 7 only exemplarily illustrates two first coloring regions 610, one second coloring region 620, and one third coloring region 630. Accordingly, FIG. 7 exemplarily illustrates two first color conversion regions 510, one second color conversion region 520, and one third color conversion region 530. The arrangement and size of the first coloring regions 610, the second coloring regions 620, and the third coloring regions 630 can be flexibly configured as needed and are not specifically limited in the embodiments of the present disclosure.

[0088] A first color conversion portion 510 is disposed within a first coloring region 610 and is configured to convert light emitted by the light-emitting device 260 into a first color. A second color conversion portion 520 is disposed within a second coloring region 620 and is configured to convert light emitted by the light-emitting device 260 into a second color. A third color conversion portion 530 is disposed within a third coloring region 630 and is configured to convert light emitted by the light-emitting device into a third color. For example, the first, second, and third colors may be red, green, and blue, respectively, enabling the light-emitting substrate 1100 to achieve full-color display.

[0089] Of course, in other embodiments, the first color, the second color, and the third color can also be other color combinations, which are not specifically limited in the embodiments of the present disclosure. Alternatively, in other embodiments, the color conversion layer 500 can include two or four color conversion portions to convert the light emitted by the multiple light-emitting devices 260 into two or four colors. This disclosure does not specifically limit this, as long as the same technical concept is used.

[0090] In other embodiments, referring to Figures 2 and 5 , the color conversion layer 500 includes multiple fourth color conversion portions 540, with one fourth color conversion portion 540 located within each tinting region 600. In other words, the color conversion layer 500 is configured to convert light emitted by multiple (all) light-emitting devices 260 into a fourth color, while the light-emitting substrate 1100 is configured to emit light of a single color. The fourth color can be red, green, blue, or any other desired color, without specific limitation, as long as the same technical principles are employed.

[0091] In some embodiments, the material of the second electrode 400 includes a reflective material. In this way, light emitted from a coloring area 600 to the second electrode is reflected on the surface of the second electrode 400, and still propagates within the above-mentioned coloring area 600, and will not propagate to the adjacent coloring area 600, which can reduce the risk of color cross-talk between adjacent coloring areas 600.

[0092] Exemplarily, the material of the second electrode 400 may include one or more of titanium (Ti), aluminum (Al), nickel (Ni), gold (Au), chromium (Cr), platinum (Pt), copper (Cu), silver (Ag), and tin (Sn).

[0093] In some embodiments, referring to Figures 7 and 8, the second electrode 400 may include a stacked structure 430 and a pad structure 440 disposed on the side of the stacked structure 430 away from the driving backplate 100. The stacked structure 430 may include a titanium layer, an aluminum layer, a nickel layer, and a gold layer stacked in a direction away from the driving backplate 100, or the stacked structure 430 may include a chromium layer, a platinum layer, and a gold layer stacked in a direction away from the driving backplate 100. The first stack is used to form an ohmic contact with the second semiconductor layer 250, which helps to reduce the impedance of the second electrode 400. The material of the pad structure 440 may include at least one of tin, silver, and copper. In the case where the pad structure 440 includes multiple layers of metal, the arrangement order of the second stack can be adjusted arbitrarily. The second stack is used to increase the thickness of the second electrode 400 so that the thickness of the second electrode 400 meets certain requirements.

[0094] When stacked structure 430 includes titanium, aluminum, nickel, and gold layers, the thickness of the titanium layer may be 15 nm to 30 nm. For example, the thickness of the titanium layer may be 15 nm, 20 nm, 23 nm, or 30 nm. The thickness of the aluminum layer may be 50 nm to 200 nm. For example, the thickness of the aluminum layer may be 50 nm, 80 nm, 145 nm, or 200 nm. The thickness of the nickel layer may be 20 nm to 50 nm. For example, the thickness of the aluminum layer may be 20 nm, 35 nm, 40 nm, or 50 nm. The thickness of the gold layer may be 50 nm to 350 nm. For example, the thickness of the aluminum layer may be 50 nm, 85 nm, 100 nm, 200 nm, 300 nm, or 350 nm. When stacked structure 430 includes chromium, platinum, and gold layers, the thickness of the chromium layer may be 40 nm to 60 nm. For example, the thickness of the chromium layer may be 40 nm, 50 nm, 55 nm, or 60 nm. The thickness of the platinum layer may be 15 nm to 25 nm, and for example, the thickness of the platinum layer may be 15 nm, 20 nm, 23 nm, or 25 nm, etc. The thickness of the gold layer may be 150 nm to 350 nm, and for example, the thickness of the gold layer may be 150 nm, 200 nm, 250 nm, 320 nm, or 350 nm, etc.

[0095] In some embodiments, referring to FIG. 7 , along a direction perpendicular to and proximal to the driving backplate 100 (from top to bottom in FIG. 7 ), the end (lower surface) of the second electrode 400 proximal to the driving backplate 100 extends beyond the end of the color conversion layer 500 proximal to the driving backplate 100. In other words, the depth of the second groove 252 is greater than the depth of the first groove 251, so that the lower surface of the second electrode 400 is closer to the driving backplate than the lower surface of the color conversion layer 500. This reduces the risk of light, after color conversion by the color conversion layer 500 within one tinting region 600, being emitted from the side of the second electrode 400 proximal to the driving backplate 100 toward an adjacent tinting region 600.

[0096] Along a direction perpendicular to the driving backplane 100 and away from the driving backplane 100 (the direction from bottom to top in FIG. 7 ), one end of the second electrode 400 away from the driving backplane 100 extends out from the other end of the color conversion layer 500 away from the driving backplane 100. That is, the upper surface of the second electrode 400 is farther away from the driving backplane 100 than the upper surface of the color conversion layer 500. In this way, at least part of the light emitted from the color conversion layer 500 and diverging in all directions can be emitted toward the surface of the portion of the second electrode 400 extending out of the color conversion layer 500 and reflected, thereby increasing the light emitted from directly above the tinting area 600 and reducing the risk of cross-color light from adjacent tinting areas 600.

[0097] For example, as shown in FIG7 , along a direction perpendicular to the driving backplane 100 and close to the driving backplane 100, one end of the second electrode 400 close to the driving backplane 100 extends out from one end of the color conversion layer 500 close to the driving backplane 100; and along a direction perpendicular to the driving backplane 100 and away from the driving backplane 100, one end of the second electrode 400 away from the driving backplane 100 extends out from one end of the color conversion layer 500 away from the driving backplane 100.

[0098] In some other examples, referring to Figure 9, along the direction perpendicular to the driving backplate 100, the end of the second electrode 400 close to the driving backplate 100 is roughly flush with the end of the color conversion layer 500 close to the driving backplate 100, and along the direction perpendicular to the driving backplate 100 and away from the driving backplate 100, the end of the second electrode 400 away from the driving backplate 100 extends out from the end of the color conversion layer 500 away from the driving backplate 100.

[0099] In some other examples, referring to Figure 10, along the direction perpendicular to the driving backplate 100 and close to the driving backplate 100, the end of the second electrode 400 close to the driving backplate 100 extends out from the end of the color conversion layer 500 close to the driving backplate 100; and along the direction perpendicular to the driving backplate 100, the end of the second electrode 400 away from the driving backplate 100 is roughly flush with the end of the color conversion layer 500 away from the driving backplate 100.

[0100] In some embodiments, referring to FIG. 10 , the isolation structure 300 includes a third groove 310 and an insulating layer 320 and a reflective layer 330 sequentially disposed within the third groove 310 . In a direction away from the driving backplane 100 (from bottom to top in FIG. 10 ), the third groove 310 penetrates the bonding layer 210, the first electrode layer 220, the first semiconductor layer 230, and the light-emitting layer 240, and extends into the second semiconductor layer 250. The third groove 310 is used to separate the device stack 200 into a plurality of light-emitting devices 260. The insulating layer 320 is used to protect the sidewalls of the light-emitting devices 260 exposed by the third groove 310 and to separate the reflective layer 330 from the light-emitting devices 260. In particular, it separates the bonding pattern 211, the first electrode pattern 221, and the first semiconductor pattern 231 of the light-emitting devices 260 from the reflective layer 330, thereby reducing the possibility that the reflective layer 330 will electrically connect the first electrode patterns of adjacent light-emitting devices 260. The reflective layer 330 is used to reflect light emitted by the light-emitting device 260, so that as much light as possible is directed toward the colored area 600 corresponding to the light-emitting device 260, thereby improving the light extraction efficiency of the light-emitting substrate 1100. At the same time, the reflective layer can reduce the risk of light from being directed toward adjacent light-emitting devices 260, thereby reducing the risk of light mixing between adjacent light-emitting devices 260.

[0101] For example, the insulating layer 320 may be made of an insulating material, such as silicon oxide. The thickness of the insulating layer may be 500 nm to 1000 nm. For example, the thickness of the insulating layer 320 may be 500 nm, 750 nm, 900 nm, or 1000 nm.

[0102] Referring to FIG. 11 , FIG. 11 can be viewed as a bottom view of the light-emitting substrate 1100 shown in FIG. 7 with the driver backplane 100 removed. The third groove 310 includes a plurality of first sub-grooves 311 and a plurality of second sub-grooves 312. The plurality of first sub-grooves 311 are arranged at intervals along the first direction X and all extend along the second direction Y. The plurality of second sub-grooves 312 are arranged at intervals along the second direction Y and all extend along the first direction X. The plurality of first sub-grooves 311 and the plurality of second sub-grooves 312 intersect with each other to form a grid structure, each grid defining a light-emitting device 260, and the shape defined by each grid can be approximately the shape of the light-emitting area of ​​the light-emitting device 260. The first direction X is parallel to the second direction Y. Exemplarily, the first direction X and the second direction Y are perpendicular to each other.

[0103] It can be understood that, as shown in Figure 11, the shape of the light-emitting area of ​​the light-emitting device 260 can be a rectangle. Of course, the shape of the light-emitting area of ​​the light-emitting device 260 can also be other polygons (such as triangles, hexagons or octagons, etc.), circles, ellipses or any other required shapes. The embodiments of the present disclosure do not make specific limitations on this, as long as the same technical concept is adopted.

[0104] In some embodiments, referring to FIG10 , along a direction perpendicular to the sidewall of the third groove 310 (horizontal direction in FIG10 ), a first gap D1 is provided between two portions of the reflective layer 330 covering the two opposite sidewalls of the insulating layer 320. In this way, the thickness of the reflective layer 330 can be reduced, the material usage of the reflective layer 330 can be reduced, and the preparation cost of the light-emitting substrate 1100 can be reduced.

[0105] For example, the material of the reflective layer 330 may include silver or aluminum. Of course, other metal or non-metal materials with high reflectivity may also be used, as long as the same technical concept is adopted.

[0106] In other embodiments, as shown in Figure 12, the reflective layer 330 can also fill the gaps in the insulating layer 320 in the direction perpendicular to the sidewalls of the third groove 310. For example, when the gaps in the insulating layer 320 along the sidewalls perpendicular to the third groove 310 are small (for example, less than 1 μm), the reflective layer 330 can fill the gaps between the insulating layers 320.

[0107] In some embodiments, as shown in FIG10 , the dimension of the third recess 310 is D3, perpendicular to the sidewalls of the third recess 310. The value of D3 ranges from 2 μm to 3 μm, meaning that the spacing between two adjacent light-emitting devices 260 is 2 μm to 3 μm. For example, the value of D3 can be 2 μm, 2.3 μm, 2.5 μm, 2.9 μm, or 3 μm, among others, which are not listed here. The thickness of the insulating layer 320 ranges from 0.1 μm to 0.5 μm. For example, the thickness of the insulating layer 320 can be 0.1 μm, 0.3 μm, 0.4 μm, or 0.5 μm, among others, which are not listed here in the embodiments of the present disclosure. The thickness of the reflective layer 330 ranges from 50 nm to 150 nm. For example, the thickness of the reflective layer 330 can be 50 nm, 80 nm, 100 nm, 135 nm, or 150 nm, among others, among others, which are not listed here. When the value of D3 is 2 μm, the thickness of the insulating layer 320 is less than 1000 nm, so that a gap for accommodating the reflective layer 330 can be formed between the insulating layers 320 .

[0108] In some embodiments, as shown in Figure 10, the orthographic projection of the second electrode 400 on the driving backplane 100 is located within the range of the orthographic projection of the isolation structure 300 on the driving backplane 100, so that the orthographic projection of the tinting area 600 on the driving backplane 100 covers the orthographic projection of the light-emitting device 260 corresponding to the tinting area 600 on the driving backplane 100, so that the light emitted by the light-emitting device 260 is directed as much as possible toward the tinting area 600 corresponding to the light-emitting device 260, and is emitted after color conversion by the color conversion layer in the tinting area 600, thereby improving the luminous efficiency of the light-emitting substrate 1100.

[0109] As shown in Figure 10, there is a second gap D2 between the second electrode 400 and the isolation structure 300 along the direction perpendicular to the driving backplane 100, so that the second semiconductor layer 250 is continuous between the second electrode 400 and the isolation structure 300, that is, the second semiconductor layer 250 is prevented from being disconnected by the second electrode 400 and the isolation structure 300.

[0110] 3 , the second electrode 400 includes a plurality of first sub-segments 410 and a plurality of second sub-segments 420 . The plurality of first sub-segments 410 are arranged at intervals along a first direction X and extend along a second direction Y. The plurality of second sub-segments 420 are arranged at intervals along the second direction Y and extend along the first direction X. The plurality of first sub-segments 410 and the plurality of second sub-segments 420 intersect to form a grid structure, with each grid defining a colored region 600 .

[0111] In some embodiments, referring to FIG. 3 , along the row direction (first direction X) of the plurality of light-emitting devices 260, the size of the light-emitting devices 260 is D4, with a value ranging from 3 μm to 5 μm. Furthermore, along the column direction (second direction Y) of the plurality of light-emitting devices 260, the size of the light-emitting devices 260 is D5, with a value ranging from 3 μm to 5 μm. This greatly increases the arrangement density of the light-emitting devices 260 in the light-emitting substrate 1100 and the pixel density of the display device 1000. Using the light-emitting substrate 1100 provided in the embodiments of the present disclosure, a light-emitting substrate with a maximum PPI of 5000 can be produced.

[0112] It is understandable that in some display devices with lower pixel density requirements, the size of the light-emitting device 260 can be adaptively increased, or the interval between adjacent light-emitting devices 260 can be adaptively increased as needed.

[0113] Some other embodiments of the present disclosure, as shown in FIG13 , further provide a method for preparing a light-emitting substrate. The method for preparing a light-emitting substrate includes steps S100 to S800 .

[0114] S100 , referring to FIG. 14 , a device stack layer 200 is formed on a substrate 700 .

[0115] The device stack layer 200 includes a second semiconductor layer 250 , a light emitting layer 240 , a first semiconductor layer 230 , a first electrode layer 220 and a bonding layer 210 , which are sequentially arranged in a direction away from the substrate 700 .

[0116] In some embodiments, the substrate 700 may include a base 710 and a buffer layer 720 disposed on the base 710. The base 710 may be one of a silicon base (Si), a sapphire base (aluminum oxide Al2O3), a silicon carbide base (SiC), gallium arsenide (GaAs), aluminum nitride (AlN), and zinc oxide (ZnO).

[0117] The buffer layer 720, the second semiconductor layer 250, the light-emitting layer 240, and the first semiconductor layer 230 can be sequentially grown on the substrate 710 using an epitaxial process. The second semiconductor layer 250, the light-emitting layer 240, and the first semiconductor layer 230 can also be referred to as epitaxial layers or epitaxial layers, and the substrate 700 and the epitaxial layers can be collectively referred to as an epitaxial wafer.

[0118] For example, after forming the epitaxial wafer, the first electrode layer 220 can be formed by evaporation or sputtering. The material and thickness of the first electrode layer 220 are described above and will not be described here. After the first electrode layer 220 is formed, a suitable process can be selected to prepare the bonding layer 210 according to the material used for the bonding layer 210. For example, when the material of the bonding layer 210 is MTD or copper, the bonding layer 210 can be prepared by sputtering. When the material of the bonding layer 210 is gold, the bonding layer 210 can be prepared by evaporation. The thickness of the bonding layer 210 is described above and will not be described here.

[0119] S200 , referring to FIG. 15 to FIG. 19 , an isolation structure 300 is formed on the device stack layer 200 .

[0120] The isolation structure 300 passes through the bonding layer 210, the first electrode layer 220, the first semiconductor layer 230 and the light-emitting layer 240, and extends into the second semiconductor layer 250. The isolation structure 300 separates the device stack layer 200 into a plurality of light-emitting devices 260. Each light-emitting device 260 may include a bonding pattern 211 located in the bonding layer 210, a first electrode pattern 221 located in the first electrode layer 220, a first semiconductor pattern 231 located in the first semiconductor layer 230, a light-emitting pattern 241 located in the light-emitting layer 240, and a second semiconductor pattern 253 located in the second semiconductor layer 250.

[0121] In some embodiments, the above-mentioned S200 of forming the isolation structure 300 on the device stack layer 200 may include S210 and S220 .

[0122] S210 , forming a third groove 310 on the device stack layer 200 .

[0123] The third groove 310 penetrates the bonding layer 210 , the first electrode layer 220 , the first semiconductor layer 230 and the light emitting layer 240 and extends into the second semiconductor layer 250 . The third groove 310 separates the device stack layer 200 into a plurality of light emitting devices 260 .

[0124] For example, the step S210 of forming the third groove 310 on the device stack layer 200 may include S211 and S212 .

[0125] S211 , referring to FIG. 15 , an eighth mask layer 808 is formed on the surface of the bonding layer 210 by using a photolithography process.

[0126] The above-mentioned photolithography process may include, for example, but is not limited to, photoresist coating, exposure and development, and etching.

[0127] S212 , referring to FIG. 16 , using the eighth mask layer 808 as a mask, the bonding layer 210 , the first electrode layer 220 , the first semiconductor layer 230 , the light emitting layer 240 and the second semiconductor layer 250 are etched step by step, and the eighth mask layer 808 is removed.

[0128] For example, an ion beam etching (IBE) process may be used to etch the bonding layer 210 and the first electrode layer 220. Then, an inductively coupled plasma (ICP) etching technique may be used to etch the first semiconductor layer 230, the light emitting layer 240, and the second semiconductor layer 250. The etching gas may include chlorine (Cl2) and boron trichloride (BCl3).

[0129] S220 , referring to FIG. 17 to FIG. 19 , an insulating layer 320 and a reflective layer 330 are sequentially formed on the sidewalls and bottom wall of the third groove 310 .

[0130] The insulating layer 320 covers the sidewalls and bottom wall of the groove 310 and exposes the surface of the bonding layer 210 away from the substrate 700. The reflective layer 330 covers the surface of the insulating layer 320 away from the sidewalls and bottom wall of the third groove 310 and exposes the surface of the device stack layer 200 away from the substrate 700 (the surface of the bonding layer 210 away from the substrate 700). The insulating layer 320 and the reflective layer 330 do not cover the surface of the bonding layer 210 away from the substrate 700 so that in subsequent processes, the bonding layer 210 is bonded to the driving backplate 100. The materials and thicknesses of the insulating layer 320 and the reflective layer 330 are described above and will not be repeated here.

[0131] Illustratively, the above step S220 of sequentially forming the insulating layer 320 and the reflective layer 330 on the sidewall and bottom wall of the third groove 310 includes S221 to S223 .

[0132] S221, as shown in FIG17 , an initial insulating layer 321 and an initial reflective layer 331 are sequentially formed on the device stack 200. The initial insulating layer 321 covers the sidewalls and bottom wall of the third recess 310 and the surface of the bonding layer 210 away from the substrate 700. In other words, the initial insulating layer 321 is a continuous, integral layer structure. The initial reflective layer 331 covers the surface of the initial insulating layer 321. In other words, the initial reflective layer 331 is also a continuous, integral layer structure.

[0133] For example, the initial insulating layer 321 can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or any other thin film deposition process. The initial reflective layer can be prepared by evaporation, sputtering, or other processes.

[0134] 18 , a ninth mask layer 809 is formed on a side of the initial reflective layer 331 away from the substrate 700 . The ninth mask layer 809 exposes a surface of the initial reflective layer 331 located on the bonding layer 210 away from the substrate 700 .

[0135] For example, a whole initial ninth mask layer can be formed by using a thin film deposition process such as CVD, PVD, ALD or any other thin film deposition process, and then the initial ninth mask layer is patterned by an etching process to expose the surface of the initial reflective layer 331 located at the bonding layer 210 away from the substrate 700.

[0136] S223 , referring to FIG. 19 , using the ninth mask layer 809 as a mask, remove the portion of the initial reflective layer 331 and the initial insulating layer 321 covering the surface of the bonding layer 210 , and remove the ninth mask layer 809 .

[0137] One of the initial reflective layer 331 and the initial insulating layer 321 is a metal material, and the other is an insulating material. For example, the initial reflective layer 331 and the initial insulating layer 321 can be etched in steps. For example, the initial reflective layer 331 can be etched using an IBE process, and the initial insulating layer 321 can be removed using a dry or wet etching process.

[0138] After removing the portion of the initial reflective layer 331 covering the surface of the bonding layer 210 away from the substrate 700, the initial reflective layer 331 forms the reflective layer 330. After removing the portion of the initial insulating layer 321 covering the surface of the bonding layer 210 away from the substrate 700, the initial insulating layer 321 forms the insulating layer 320. The third groove 310, the insulating layer 320, and the reflective layer 330 together form an isolation structure 300. The isolation structure 300 separates the device stack layer 200 to form a plurality of light-emitting devices 260.

[0139] S300 , referring to FIG. 20 , provides a driving backplane 100 , and bonds the device stack layer 200 to the driving backplane 100 .

[0140] The driving backplane 100 includes multiple driving circuits, the bonding layer 210 of the device stacking layer 200 is bonded to the driving backplane 100, and a light-emitting device 260 is connected to a driving circuit. Specifically, the bonding pattern 211 of the light-emitting device 260 is connected to the driving circuit, and the driving circuit is connected to the first semiconductor pattern 231 in sequence through the bonding pattern 211 and the first electrode pattern 221, and is configured to apply voltage to the first semiconductor pattern 231.

[0141] For example, the device stack 200 (with the substrate 700) is flipped over, and the device stack 200 is bonded to the driver backplane 100 through a high-precision alignment bonding process. The film layer on the driver backplane 100 bonded to the bonding layer 210 can be a metal film layer, such as a tin layer or a gold layer.

[0142] S400 , referring to FIG. 21 , the substrate 700 is removed to expose the second semiconductor layer 250 .

[0143] For example, if substrate 710 is a sapphire substrate, laser lift-off (LLO) can be used to remove the sapphire substrate. If substrate 710 is a silicon substrate, chemical-mechanical polishing (CMP) can be used to reduce the thickness of substrate 710, and then a wet etching process can be used to remove the remaining substrate 710. Buffer layer 720 can be removed using ICP etching, and the etching gas can include chlorine (Cl2) and boron trichloride (BCl3).

[0144] The second semiconductor layer 250 includes a plurality of coloring regions 600 distributed in an array, and an isolation region 254 located between any adjacent coloring regions 600 . The isolation region 254 is a region for forming the first groove 251 .

[0145] S500 , referring to FIG. 22 to FIG. 27 , a plurality of second grooves 252 are formed on a surface of the second semiconductor layer 250 away from the driving backplane 100 (the upper surface of the second semiconductor layer 250 in the figures).

[0146] A portion of the second grooves 252 is located in the colored regions 600 , and a portion is located in the isolation region 254 . That is, the second grooves 252 are distributed throughout the entire area of ​​the second semiconductor layer 250 .

[0147] In some embodiments, the above-mentioned S500 includes S510 forming a plurality of second grooves 252 on a surface of the second semiconductor layer 250 away from the driving backplate 100 .

[0148] S510 , referring to FIG. 22 , the second semiconductor layer 250 is etched by an electrochemical etching process to form a plurality of second grooves 252 on a surface of the second semiconductor layer 250 away from the driving backplane 100 .

[0149] The electrochemical etching process can form second grooves 252 with smaller openings, which can increase the distribution density of the second grooves 252. The electrochemical etching process is simple to operate and the preparation process is simple, which helps to reduce the preparation cost of the light-emitting substrate. However, the opening shapes of the multiple second grooves 252 obtained by the electrochemical etching process are irregular, and the dimensions of the multiple second grooves 252 are uncertain. Based on this, at least two of the multiple second grooves 252 have different opening sizes; and / or at least two of the second grooves 252 have different opening shapes; and / or at least two of the second grooves 252 have different depths along a direction perpendicular to the second semiconductor layer 250 (the vertical direction in Figure 22).

[0150] In some other embodiments, referring to FIG. 23 to FIG. 27 , the step S500 of forming a plurality of second grooves 252 on the surface of the second semiconductor layer 250 away from the driving backplate 100 includes S521 to S525 .

[0151] S521 , referring to FIG. 23 , a first initial mask layer 811 is formed on the second semiconductor layer 250 .

[0152] The first initial mask layer 811 covers the surface of the second semiconductor layer 250 away from the driving backplate 100. The material of the first initial mask layer 811 can be silicon oxide (SiO). For example, the first initial mask layer 811 can be formed using plasma enhanced chemical vapor deposition (PECVD), CVD, PVD, ALD, or any other thin film deposition process.

[0153] S522 , referring to FIG. 24 , an imprint pattern layer 812 is formed on the initial mask layer 811 .

[0154] The embossing pattern layer 812 includes a plurality of embossing patterns 813, each of which exposes a portion of the first preliminary mask layer 811. The embossing pattern 813 is, for example, a through hole. Exemplarily, the embossing pattern layer 812 can be formed using nanoimprint technology.

[0155] S523 , referring to FIG. 25 , using the imprint pattern layer 812 as a mask, the initial mask layer 811 is etched (so that the initial mask layer 811 ) to form a first mask layer 801 .

[0156] The first mask layer 801 has the same pattern as the embossed pattern layer 812. For example, the initial mask layer 811 can be etched by a dry or wet etching process, which is not specifically limited here.

[0157] S524 , referring to FIG. 26 , the second semiconductor layer 250 is etched using the first mask layer 801 as a mask to form a plurality of second grooves 252 on the second semiconductor layer 250 .

[0158] For example, the second semiconductor layer 250 can be etched by dry etching or wet etching. The above steps S523 and S524 can be completed simultaneously, that is, the initial mask layer 811 and the second semiconductor layer 250 can be etched sequentially by a single etching process. Alternatively, the above steps S523 and S524 can be completed in steps, that is, the initial mask layer 811 is first etched by a single etching process to form the first mask layer 801, and then the second semiconductor layer 250 is etched by a sequential etching process to form a plurality of second grooves 252 on the second semiconductor layer 250.

[0159] S525 , referring to FIG. 27 , the embossing pattern layer 812 and the first mask layer 801 are removed.

[0160] The plurality of second grooves 252 formed through steps S521 to S525 have substantially the same structure, i.e., the opening size, opening shape, and dimensions perpendicular to the second semiconductor layer 250 (the vertical direction in FIG. 26 ) of the plurality of second grooves 252 are substantially the same. Referring to FIG. 27 , the plurality of second grooves 252 can be evenly distributed throughout the tinted region 600 and the isolation region 254 .

[0161] The following uses the above-mentioned steps S521 to S525 to form multiple second grooves 252 on the surface of the second semiconductor layer 250 away from the driving backplane 100 as an example to illustrate other steps of the preparation method of the light-emitting substrate of the present application, but the embodiments of the present disclosure are not limited to this, as long as the same technical concept is adopted.

[0162] The light-emitting substrate may be a monochrome light-emitting substrate that emits light of a single color, or may be a color light-emitting substrate that emits light of multiple colors or a full-color light-emitting substrate.

[0163] In the case of a monochromatic light-emitting substrate that emits monochromatic light, after forming a plurality of second grooves 252 on the surface of the second semiconductor layer 250 away from the driving backplane 100 in step S500, the preparation method includes steps S700 and S600, with step S700 being performed first and then S600. Furthermore, before performing step S700, the user may choose to perform step S570 based on actual needs.

[0164] S570 , performing surface treatment on the plurality of second grooves 252 to increase the adsorption force between the material of the color conversion layer 500 and the second grooves 252 .

[0165] For example, if the material of the color conversion layer 500 has poor adsorption to the surface of the second groove 252 , resulting in poor filling of the material of the color conversion layer in the second groove 252 , S570 may be performed before S700 .

[0166] For example, a preset solution can be used to soak the second groove 252, wherein the electrostatic adsorption force of the preset solution is opposite to the electrostatic adsorption force of the material of the color conversion layer, so that the surface of the second groove 252 can have an electrostatic adsorption force that is electrically opposite to the electrostatic adsorption force of the material of the color conversion layer, thereby increasing the electrostatic adsorption force between the material of the color conversion layer and the surface of the second groove 252, increasing the filling effect of the material of the color conversion layer in the second groove 252, and facilitating the filling of the material of the color conversion layer in the second groove 252.

[0167] S700 , referring to FIG. 28 , a color conversion layer 500 is formed in the plurality of second grooves 252 .

[0168] In some embodiments, the color conversion layer 500 can be formed within the second grooves 252 using a color conversion layer stock solution through processes such as spin coating, drop coating, or immersion. The color conversion layer stock solution refers to a liquid containing the color conversion layer material. For example, if the color conversion layer 500 material includes quantum dots, the color conversion layer stock solution can be a solution of the quantum dot material and toluene or other organic solvents. A color conversion block 501 is formed within each second groove 252. Since the light-emitting substrate emits light of a single color, the material within each coloring region 600 can be the same, allowing the color conversion layer 500 made of the same material to be formed simultaneously within all second grooves 252.

[0169] S600 , referring to FIG. 29 to FIG. 31 , a first groove 251 is formed on a surface of the second semiconductor layer 250 away from the driving backplane 100 .

[0170] The first groove 251 is located in the isolation region 254 and is used to separate the plurality of colored regions 600 of the second semiconductor layer 250. Exemplarily, the above step S600 of forming the first groove 251 on the surface of the second semiconductor layer 250 away from the driving backplane 100 includes S611 to S613.

[0171] S611 , referring to FIG. 29 , a second mask layer 802 is formed on a side of the second semiconductor layer 250 away from the driving backplane 100 .

[0172] The second mask layer 802 covers the plurality of colored regions 600 and exposes the isolation region 254. For example, the second mask layer 802 can be formed by photolithography or other suitable processes, as long as the same technical concept is adopted.

[0173] S612 , referring to FIG. 30 , using the second mask layer 802 as a mask, remove portions of the second semiconductor layer 250 and the color conversion layer 500 located in the isolation region 254 to form a first groove 251 .

[0174] For example, a dry etching process can be used to remove the second semiconductor layer 250 and the color conversion layer 500 located in the isolation region 254. The dry etching process can be, for example, an ICP process or an IBE process. The dimensions and other features of the first groove 251 are described above and are not described again here.

[0175] S613 , referring to FIG. 31 , the second mask layer 802 is removed.

[0176] In other embodiments, as shown in FIG7 , when the light-emitting substrate 1100 is a multi-color light-emitting substrate that emits light of multiple colors, the color conversion layer 500 includes a plurality of first color conversion regions 510, a plurality of second color conversion regions 520, and a plurality of third color conversion regions 530. The plurality of first color conversion regions 510 are configured to convert light emitted by a portion of the light-emitting devices 260 into a first color, the plurality of second color conversion regions 520 are configured to convert light emitted by the light-emitting devices 260 into a second color, and the plurality of third color conversion regions 530 are configured to convert light emitted by the light-emitting devices 260 into a third color. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, so that the light-emitting substrate 1100 can achieve full-color display.

[0177] When the light-emitting substrate 1100 is a color light-emitting substrate that emits light of multiple colors, after forming multiple second grooves 252 on the surface of the second semiconductor layer 250 away from the driving backplane 100 in the above step S500, the preparation method includes S600 and S700, and S600 is performed first and then S700.

[0178] S600 , referring to FIG. 32 to FIG. 34 , a first groove 251 is formed on a surface of the second semiconductor layer 250 away from the driving backplane 100 .

[0179] The first groove 251 is located in the isolation region 254 and is used to separate the plurality of colored regions 600 of the second semiconductor layer 250. Exemplarily, the above step S600 of forming the first groove 251 on the surface of the second semiconductor layer 250 away from the driving backplane 100 includes S621-S623.

[0180] S621 , referring to FIG. 32 , a third mask layer 803 is formed on a surface of the second semiconductor layer 250 away from the driving backplane 100 .

[0181] The third mask layer 803 covers the plurality of colored regions 600 and exposes the isolation region 254. For example, the third mask layer 803 can be prepared by a photolithography process or other suitable process, as long as the same technical concept is adopted.

[0182] S622 , referring to FIG. 33 , using the third mask layer 803 as a mask, remove the portion of the second semiconductor layer 250 located in the isolation region 254 to form a first groove 251 .

[0183] For example, a dry etching process may be used to remove the portion of the second semiconductor layer 250 located in the isolation region 254. The dry etching process may be, for example, an ICP process or an IBE process. The dimensions and other features of the first groove 251 are described above and will not be described again here.

[0184] S623 , referring to FIG. 34 , the third mask layer 803 is removed.

[0185] In some embodiments, after removing the third mask layer 803 in the above S623 and before S700 , the method for preparing the light-emitting substrate may further include S570 according to actual needs.

[0186] S570 , performing surface treatment on the plurality of second grooves 252 to increase the adsorption force between the material of the color conversion layer 500 and the second grooves 252 .

[0187] For example, if the material of the color conversion layer 500 has poor adsorption to the surface of the second groove 252 , resulting in poor filling of the material of the color conversion layer in the second groove 252 , S570 may be performed before S700 .

[0188] For example, a preset solution can be used to soak the second groove 252, wherein the electrostatic adsorption force of the preset solution is opposite to the electrostatic adsorption force of the material of the color conversion layer, so that the surface of the second groove 252 can have an electrostatic adsorption force that is electrically opposite to the electrostatic adsorption force of the material of the color conversion layer, thereby increasing the electrostatic adsorption force between the material of the color conversion layer and the surface of the second groove 252, increasing the filling effect of the material of the color conversion layer in the second groove 252, and facilitating the filling of the material of the color conversion layer in the second groove 252.

[0189] S700 , referring to FIG. 35 to FIG. 43 , a color conversion layer 500 is formed in the plurality of second grooves 252 .

[0190] In the case where the light-emitting substrate 1100 is a color light-emitting substrate that emits multiple colors, the following uses the light-emitting substrate 1100 emitting three colors of light as an example to schematically illustrate the preparation method of the light-emitting substrate of the embodiment of the present disclosure. However, the embodiment of the present disclosure is not limited to this. The light-emitting substrate 1100 can also emit light of any other number of colors as long as the same technical concept is adopted.

[0191] When the light emitting substrate 1100 emits three colors of light, the plurality of coloring regions 600 may include a plurality of first coloring regions 610, a plurality of second coloring regions 620, and a plurality of third coloring regions 630. The above step S700 of forming the color conversion layer 500 in the plurality of second grooves 252 may include S721 to S729.

[0192] S721 , referring to FIG. 35 , a fourth mask layer 804 is formed on a side of the second semiconductor layer 250 away from the driving backplane 100 . The fourth mask layer 804 covers the first groove 251 , the second coloring regions 620 , and the third coloring regions 630 , and exposes the first coloring regions 610 .

[0193] Illustratively, the fourth mask layer 804 may be prepared by a photolithography process or other suitable processes, which is not specifically limited in the embodiments of the present disclosure.

[0194] S722 , referring to FIG. 36 , a first color conversion layer 511 is formed on the surface of the fourth mask layer 804 away from the driving backplane 100 and in the plurality of second grooves 252 in the first coloring region 610 .

[0195] In some embodiments, a color conversion layer stock solution can be used to form a first color conversion layer 511 on the surface of the fourth mask layer 804 away from the driver backplane 100 and within the plurality of second grooves 252 within the first coloring region 610 by spin coating, drop coating, or dipping. A color conversion block is formed within each second groove 252 within the first coloring region 610. The first color conversion layer 511 is configured to convert light emitted by the light-emitting device 260 into a first color.

[0196] S723 , referring to FIG. 37 , as shown in FIG. 37 , the fourth mask layer 804 is removed, and a portion of the first color conversion layer 511 located on a surface of the fourth mask layer 804 away from the driving backplane 100 is removed.

[0197] The remaining portion of the first color conversion layer 511 (located within the first coloring region 610) forms a plurality of first color conversion portions 510. For example, a process such as CMP, dry etching, or wet etching can be used to remove portions of the first color conversion layer 511 and the fourth mask layer 804. Alternatively, a lift-off process can be used to directly remove the fourth mask layer 804. During the lift-off process, the first color conversion layer 511 on the surface of the fourth mask layer 804 can be simultaneously removed. The embodiments of the present disclosure are not limited to this embodiment, and the same technical concept can be used.

[0198] S724 , referring to FIG. 38 , a fifth mask layer 805 is formed on a side of the second semiconductor layer 250 away from the driving backplane 100 .

[0199] The fifth mask layer 805 covers the first groove 251, the first coloring regions 610, and the third coloring regions 630, and exposes the second coloring regions 620. For example, the fifth mask layer 805 can be formed by photolithography or other suitable processes, which are not specifically limited here.

[0200] S725 , referring to FIG. 39 , a second color conversion layer 521 is formed on the surface of the fifth mask layer 805 away from the driving backplane 100 and in the second coloring region 620 .

[0201] In some embodiments, a color conversion layer stock solution can be used to form a second color conversion layer 521 on the surface of the fifth mask layer 805 away from the driver backplane 100 and within the plurality of second grooves 252 within the second tinting region 620 by spin coating, drop coating, or dipping. A color conversion block is formed within each second groove 252 within the second tinting region 620. The second color conversion layer 521 is configured to convert light emitted by the light-emitting device 260 into a second color.

[0202] S726 , referring to FIG. 40 , the fifth mask layer 805 is removed, and a portion of the second color conversion layer 521 located on a surface of the fifth mask layer 805 away from the driving backplane 100 is removed.

[0203] The remaining portion of the second color conversion layer 521 (located within the second coloring region 620) forms a plurality of second color conversion portions 520. For example, a process such as CMP, dry etching, or wet etching can be used to remove portions of the second color conversion layer 521 and the fifth mask layer 805. Alternatively, a stripping process can be used to directly strip the fifth mask layer 805. During the stripping process, the second color conversion layer 521 on the surface of the fifth mask layer 805 can be simultaneously removed. The embodiments of the present disclosure are not limited thereto, and the same technical concept can be employed.

[0204] S727 , referring to FIG. 41 , a sixth mask layer 806 is formed on a side of the second semiconductor layer 250 away from the driving backplane 100 .

[0205] The sixth mask layer 806 covers the first groove 251, the first coloring regions 610, and the second coloring regions 620, and exposes the third coloring regions 630. For example, the fifth mask layer 805 can be formed by photolithography or other suitable processes, which are not specifically limited here.

[0206] S728 , referring to FIG. 42 , a third color conversion layer 531 is formed on the surface of the sixth mask layer 806 away from the driving backplane 100 and in the third coloring region 630 .

[0207] In some embodiments, a color conversion layer stock solution can be applied by spin coating, drop coating, or dipping to form a third color conversion layer 531 on the surface of the sixth mask layer 806 away from the driver backplane 100 and within the plurality of second grooves 252 of the third coloring region 630. A color conversion block is formed within each second groove 252 of the third coloring region 630. The third color conversion layer 531 is configured to convert light emitted by the light-emitting device 260 into a third color.

[0208] S729 , referring to FIG. 43 , the sixth mask layer 806 is removed, and a portion of the third color conversion layer 531 located on a surface of the sixth mask layer 806 away from the driving backplane 100 is removed.

[0209] The remaining portion of the third color conversion layer 531 (located within the third coloring region 630) forms a plurality of third color conversion portions 530. For example, a process such as CMP, dry etching, or wet etching can be used to partially remove the third color conversion layer 531 and the sixth mask layer 806. Alternatively, a lift-off process can be used to directly remove the sixth mask layer 806. During the lift-off process, the third color conversion layer 531 on the surface of the sixth mask layer 806 can be simultaneously removed. The embodiments of the present disclosure are not limited thereto, and the same technical concept can be employed.

[0210] If the light-emitting substrate is a monochromatic light-emitting substrate that emits a single color of light, and after the second mask layer 802 is removed in step S613, the preparation method further includes step S800. Alternatively, if the light-emitting substrate is a multi-color light-emitting substrate that emits multiple colors of light, and after the sixth mask layer 806 is removed in step S729, and the portion of the third color conversion layer 531 located on the surface of the sixth mask layer 806 away from the driving backplane 100 is removed, the preparation method further includes step S800.

[0211] S800 , referring to FIG. 44 to FIG. 46 , a second electrode 400 is formed in the first groove 251 .

[0212] At least a portion of the second electrode 400 is disposed within the first groove 251, and the second electrode 400 is connected to the second semiconductor layer 250, so that a voltage is applied to the second semiconductor layer 250 through the second electrode 400. For example, the second electrode 400 may be partially located within the first groove 251 and partially extend out of the first groove 251, so that the second electrode 400 is away from the end of the driving backplane 100 and extends out of the color conversion layer 500 away from the end of the driving backplane 100.

[0213] In some embodiments, a metal lift-off process (English: Metal Lift-Off Technology) may be used to prepare the second electrode 400. For example, the step S800 of forming the second electrode 400 in the first groove 251 may include steps S810 to S830.

[0214] S810 , referring to FIG. 44 , a seventh mask layer 807 is formed on a side of the second semiconductor layer 250 away from the driving backplane 100 . The seventh mask layer 807 covers the plurality of colored regions 600 and exposes the first grooves 251 .

[0215] Illustratively, the third mask layer 803 may be prepared by a photolithography process or other suitable processes, which is not specifically limited in the embodiments of the present disclosure.

[0216] S820 , referring to FIG. 45 , a second electrode layer 401 is formed on the surface of the seventh mask layer away from the driving back plate and in the first groove 251 .

[0217] The second electrode layer 401 covers the first groove 251 and the surface of the seventh mask layer 807. For example, it can be formed by evaporation, sputtering or other processes. The material and thickness of the second electrode layer 401 are described above and will not be repeated here.

[0218] S830 , referring to FIG. 46 , the seventh mask layer 807 is removed, and the portion of the second electrode layer 401 located on the surface of the seventh mask layer 807 is removed.

[0219] After the portion of the second electrode layer 401 located on the surface of the seventh mask layer 807 is removed, the remaining portion of the second electrode layer 401 located in the first groove 251 forms the second electrode 400 .

[0220] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, comprising: A driving backplane, including a plurality of driving circuits; The device stack layer comprises a bonding layer, a first electrode layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in a direction away from the driving backplane; the bonding layer is bonded to the driving backplane, a surface of the second semiconductor layer away from the driving backplane is provided with a first groove, the first groove separates the second semiconductor layer into a plurality of coloring regions, and at least one coloring region is provided with a plurality of second grooves; an isolation structure, wherein the isolation structure penetrates the bonding layer, the first electrode layer, the first semiconductor layer and the light-emitting layer and extends into the second semiconductor layer in a direction perpendicular to the driving backplane and away from the driving backplane, and the isolation structure separates the device stacking layer into a plurality of light-emitting devices; A second electrode, at least partially disposed in the first groove; A color conversion layer is at least partially disposed in the plurality of second grooves; Among them, one light-emitting device corresponds to one coloring area, the orthographic projection of the coloring area on the driving backplane and the orthographic projection of the light-emitting device corresponding to the coloring area on the driving backplane at least partially overlap, and one light-emitting device is connected to one driving circuit.

2. The light-emitting substrate according to claim 1, wherein: The plurality of second grooves are distributed in an array, and the structures of the plurality of second grooves are substantially the same.

3. The light-emitting substrate according to claim 1, wherein: The opening sizes of at least two second grooves are different; and / or, The opening shapes of at least two second grooves are different; and / or, At least two second grooves have different depths along a direction perpendicular to the second semiconductor layer.

4. The light-emitting substrate according to any one of claims 1 to 3, wherein The plurality of coloring regions include a plurality of first coloring regions, a plurality of second coloring regions, and a plurality of third coloring regions; The color conversion layer comprises: a plurality of first color conversion parts, one first color conversion part is disposed in one first coloring region, and the first color conversion part is configured to convert the light emitted by the light emitting device into a first color; a plurality of second color conversion parts, one second color conversion part is disposed in one second coloring region, and the second color conversion part is configured to convert the light emitted by the light emitting device into a second color; A plurality of third color conversion parts, one third color conversion part is arranged in one third coloring area, and the third color conversion part is configured to convert the light emitted by the light emitting device into a third color.

5. The light emitting substrate according to any one of claims 1 to 3, wherein The color conversion layer includes a plurality of fourth color conversion parts. A fourth color conversion part is provided in each of the plurality of second grooves in a coloring area. The plurality of fourth color conversion parts are configured to convert the light emitted by the plurality of light emitting devices into a fourth color.

6. The light emitting substrate according to any one of claims 1 to 5, wherein The material of the second electrode includes a light-reflecting material.

7. The light-emitting substrate according to claim 6, wherein: Along a direction perpendicular to the driving backplane and close to the driving backplane, the second electrode extends from one end of the color conversion layer close to the driving backplane; and / or, along a direction perpendicular to the driving backplane and away from the driving backplane, the second electrode extends from one end of the color conversion layer away from the driving backplane.

8. The light-emitting substrate according to claim 6 or 7, wherein: The second electrode comprises: A laminated structure, wherein the laminated structure comprises a titanium layer, an aluminum layer, a nickel layer and a gold layer which are sequentially laminated in a direction away from the driving back plate; or the laminated structure comprises a chromium layer, a platinum layer and a gold layer which are sequentially laminated in a direction away from the driving back plate; The pad structure is arranged on a side of the stacked structure away from the driving backplane, and the material of the pad structure includes at least one of tin, silver and copper.

9. The light-emitting substrate according to any one of claims 1 to 8, wherein The isolation structure comprises: a third groove, along a direction away from the driving back plate, the third groove penetrates the bonding layer, the first electrode layer, the first semiconductor layer and the light-emitting layer, and extends into the second semiconductor layer; An insulating layer and a reflective layer are stacked on the sidewall and bottom wall of the third groove, the insulating layer is located between the reflective layer and the third groove, and the reflective layer is configured to reflect light emitted to the reflective layer.

10. The light emitting substrate according to claim 9, wherein: The third groove comprises: A plurality of first sub-grooves, wherein the plurality of first sub-grooves are arranged at intervals along a first direction and all extend along a second direction; the first direction intersects with the second direction; a plurality of second sub-grooves, the plurality of second sub-grooves are arranged at intervals along the second direction and all extend along the first direction; The plurality of first sub-grooves and the plurality of second sub-grooves intersect with each other to form a grid structure, and each grid defines a light-emitting device.

11. The light-emitting substrate according to claim 9 or 10, wherein: Along a direction perpendicular to the sidewall of the third groove, two portions of the reflective layer covering two opposite sidewalls of the third groove have a first interval.

12. The light emitting substrate according to claim 11, wherein: Along a direction perpendicular to the sidewall of the third groove, a size of the third groove is 2 μm to 3 μm; and / or, The thickness of the insulating layer is 0.5 μm to 1 μm; and / or, The thickness of the reflective layer is 50nm-150nm.

13. The light emitting substrate according to any one of claims 1 to 12, wherein The orthographic projection of the second electrode on the driving backplane is located within the range of the orthographic projection of the isolation structure on the driving backplane.

14. The light emitting substrate according to claim 13, wherein: Along a direction perpendicular to the driving back plate, a second interval is provided between the second electrode and the isolation structure.

15. The light emitting substrate according to any one of claims 1 to 14, wherein The second electrode comprises: A plurality of first sub-sections, the plurality of first sub-sections are arranged at intervals along a first direction and all extend along a second direction; the first direction intersects with the second direction; a plurality of second sub-sections, the plurality of second sub-sections being arranged at intervals along the second direction and extending along the first direction; The plurality of first sub-sections and the plurality of second sub-sections intersect with each other to form a grid structure, and each grid defines a colored area.

16. The light emitting substrate according to any one of claims 1 to 15, wherein Along the direction perpendicular to the driving backplane, the size of the color conversion layer is 3 μm to 5 μm; and / or, Along the row direction in which the plurality of light emitting devices are arranged, the size of the light emitting devices is 3 μm to 5 μm, and along the column direction in which the plurality of light emitting devices are arranged, the size of the light emitting devices is 3 μm to 5 μm.

17. A display device, comprising: The light-emitting substrate according to any one of claims 1 to 16; The circuit board is connected to the light-emitting substrate and is configured to transmit a control signal to the light-emitting substrate.

18. A method for preparing a light-emitting substrate, comprising: forming a device stack layer on a substrate; The device stack layer comprises a second semiconductor layer, a light emitting layer, a first semiconductor layer, a first electrode layer and a bonding layer which are sequentially arranged in a direction away from the substrate; forming an isolation structure on the device stack layer; The isolation structure penetrates the bonding layer, the first electrode layer, the first semiconductor layer and the light-emitting layer, and extends into the second semiconductor layer, and the isolation structure separates the device stacking layer into a plurality of light-emitting devices; A driving backplane is provided, and the device stack layer is bonded to the driving backplane; the driving backplane includes a plurality of driving circuits, the bonding layer of the device stack layer is bonded to the driving backplane, and one of the light-emitting devices is connected to one driving circuit; removing the substrate; Exposing the second semiconductor layer, wherein the second semiconductor layer includes a plurality of coloring regions distributed in an array and an isolation region between any adjacent coloring regions; A plurality of second grooves are formed on a surface of the second semiconductor layer away from the driving backplane; a portion of the plurality of second grooves is located in the plurality of colored regions, and a portion of the plurality of second grooves is located in the isolation region; forming a first groove on a surface of the second semiconductor layer away from the driving back plate; The first groove is located in the isolation area; forming a color conversion layer in the plurality of second grooves; A second electrode is formed in the first groove.

19. The preparation method according to claim 18, wherein: The forming of an isolation structure on the device stacking layer comprises: A third groove is formed on the device stack layer; the third groove penetrates the bonding layer, the first electrode layer, the first semiconductor layer and the light-emitting layer, and extends into the second semiconductor layer, and the third groove separates the device stack layer into a plurality of light-emitting devices; An insulating layer and a reflective layer are sequentially formed in the third groove; the insulating layer covers the sidewalls and bottom wall of the groove, and the reflective layer covers the surface of the insulating layer away from the sidewalls and bottom wall of the third groove, and exposes the surface of the device stack layer away from the substrate.

20. The preparation method according to claim 18 or 19, wherein: The forming of a plurality of second grooves on a surface of the second semiconductor layer away from the driving backplane comprises: Etching the second semiconductor layer by an electrochemical etching process to form the plurality of second grooves on a surface of the second semiconductor layer away from the driving back plate; Among them, at least two second grooves have opening sizes different from each other; and / or at least two second grooves have opening shapes different from each other; and / or at least two second grooves have depths different from each other along a direction perpendicular to the second semiconductor layer.

21. The preparation method according to claim 18 or 19, wherein: The forming of a plurality of second grooves on a surface of the second semiconductor layer away from the driving backplane comprises: forming a first initial mask layer on the second semiconductor layer; the first initial mask layer covers a surface of the second semiconductor layer away from the driving backplane; forming an embossing pattern layer on the initial mask layer; the embossing pattern layer comprises a plurality of embossing patterns, and one embossing pattern exposes a partial area of ​​the first initial mask layer; Using the embossed pattern layer as a mask, etching the initial mask layer to form a first mask layer; The second semiconductor layer is etched using the first mask layer as a mask to form the plurality of second grooves on the second semiconductor layer.

22. The preparation method according to any one of claims 18 to 21, wherein The plurality of coloring regions are configured to convert the light emitted by the plurality of light emitting devices into light of the same color; After forming a plurality of second grooves on the surface of the second semiconductor layer away from the driving backplane, a color conversion layer is first formed in the plurality of second grooves, and then a first groove is formed on the surface of the second semiconductor layer away from the driving backplane.

23. The preparation method according to claim 22, wherein: The forming of the color conversion layer in the plurality of second grooves comprises: Forming a color conversion layer in the plurality of second grooves by one of suspension coating, drop coating and immersion processes; The forming of a first groove on a surface of the second semiconductor layer away from the driving backplane comprises: forming a second mask layer on a surface of the second semiconductor layer away from the driving backplane, wherein the second mask layer covers the plurality of colored regions and exposes the isolation region; Using the second mask layer as a mask, removing the second semiconductor layer and the portion of the color conversion layer located in the isolation region to form the first groove; The second mask layer is removed.

24. The preparation method according to any one of claims 18 to 21, wherein The color conversion layer includes a plurality of first color conversion portions, a plurality of second color conversion portions, and a plurality of third color conversion portions, wherein the plurality of first color conversion portions are configured to convert the light emitted by the light emitting device into a first color, the plurality of second color conversion portions are configured to convert the light emitted by the light emitting device into a second color, and the plurality of third color conversion portions are configured to convert the light emitted by the light emitting device into a third color; After forming a plurality of second grooves on the surface of the second semiconductor layer away from the driving backplane, first forming a first groove on the surface of the second semiconductor layer away from the driving backplane, and then forming a color conversion layer in the plurality of second grooves.

25. The preparation method according to claim 24, wherein: The forming of a first groove on a surface of the second semiconductor layer away from the driving backplane comprises: forming a third mask layer on a side of the second semiconductor layer away from the driving backplane, wherein the third mask layer covers the plurality of colored regions and exposes the isolation region; Using the third mask layer as a mask, removing a portion of the second semiconductor layer located in the isolation region to form the first groove; The third mask layer is removed.

26. The preparation method according to claim 24 or 25, wherein: The plurality of coloring regions include a plurality of first coloring regions, a plurality of second coloring regions, and a plurality of third coloring regions; The forming of the color conversion layer in the plurality of second grooves comprises: forming a fourth mask layer on a side of the second semiconductor layer away from the driving backplane, wherein the fourth mask layer covers the first groove, the plurality of second coloring regions and the plurality of third coloring regions, and exposes the plurality of first coloring regions; forming a first color conversion layer on a surface of the fourth mask layer away from the driving backplane and in the first coloring area; removing a portion of the first color conversion layer located on a surface of the fourth mask layer away from the driving backplane to form the plurality of first colored portions, and removing the fourth mask layer; forming a fifth mask layer on a side of the second semiconductor layer away from the driving backplane, wherein the fifth mask layer covers the first groove, the plurality of first coloring regions and the plurality of third coloring regions, and exposes the plurality of second coloring regions; forming a second color conversion layer on a surface of the fifth mask layer away from the driving backplane and in the second coloring area; removing a portion of the second color conversion layer located on a surface of the fifth mask layer away from the driving backplane to form the plurality of second colored portions, and removing the fifth mask layer; forming a sixth mask layer on a side of the second semiconductor layer away from the driving backplane, wherein the sixth mask layer covers the first groove, the plurality of first coloring regions and the plurality of second coloring regions, and exposes the plurality of third coloring regions; forming a third color conversion layer on a surface of the sixth mask layer away from the driving backplane and in the third coloring area; A portion of the third color conversion layer located on a surface of the sixth mask layer away from the driving backplane is removed to form the plurality of third coloring portions, and the sixth mask layer is removed.

27. The preparation method according to any one of claims 18 to 26, wherein Before forming the color conversion layer in the second groove, the preparation method further includes: The second grooves are subjected to surface treatment to increase the adsorption force between the material of the color conversion layer and the second grooves.

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