Radio frequency power amplifier and radio frequency front end module

Abstract

The present application discloses a radio frequency power amplifier, comprising a radio frequency amplification unit and a first transformer. A primary wire and a secondary wire of the first transformer are arranged one after the other; and the distance between a first end of a first winding and a first end of a second winding is smaller than the distance between the first end of the first winding and a second end of the first winding, and the distance between the second end of the first winding and a second end of the second winding is smaller than the distance between the first end of the second winding and the second end of the second winding. Therefore, while the overall performance of the radio frequency power amplifier is ensured, the layout of the first transformer can be flexibly configured, and the loss and occupied area can be further reduced.

Description

RF power amplifier and RF front-end module

[0001] This application is based on two Chinese applications entitled “RF power amplifier and RF front-end module” with application number 202311432068.2 filed on October 31, 2023 and “RF front-end module” with application number 202311432065.9 filed on October 31, 2023, and claims priority. Technical Field

[0002] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier and a radio frequency front-end module. Background Art

[0003] RF power amplifiers are widely used in mobile devices. Transformers, as a key component in RF power amplifiers, perform signal conversion and impedance matching. However, when designing RF power amplifiers, transformers often occupy a large area and their layout is very limited, resulting in poor overall performance and failure to meet practical requirements.

[0004] Application Contents

[0005] The embodiments of the present application provide a radio frequency power amplifier and a radio frequency power amplifier, which solve the problem that the radio frequency power amplifier cannot take into account both area and performance at the same time.

[0006] A radio frequency power amplifier comprises a radio frequency amplification unit; a first transformer, the first transformer being connected to the radio frequency amplification unit; the first transformer comprising a first winding and a second winding coupled to each other, the first winding comprising a main line connected between a first end of the first winding and a second end of the first winding; the second winding comprising a secondary line connected between a first end of the second winding and a second end of the second winding, the main line and the secondary line being arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0007] A radio frequency front-end module comprises: a substrate, a first chip arranged on the substrate, and a first transformer arranged on the substrate, the first chip comprising a first amplifying transistor; the first transformer comprising a first winding and a second winding coupled to each other, the first end of the first winding being connected to the first amplifying transistor, and the second end of the first winding being configured to be connected to a ground terminal or a power supply terminal; the first winding comprising a main line connected between the first end of the first winding and the second end of the first winding; the second winding comprising a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line being arranged following each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0008] A radio frequency front-end module, a substrate, a first chip arranged on the substrate, the first chip including a first amplifier transistor and a first transformer; the first transformer including a first winding and a second winding coupled to each other, the first end of the first winding being connected to the first amplifier transistor, and the second end of the first winding being configured to be connected to a ground terminal or a power supply terminal; the first winding including a main line connected between the first end of the first winding and the second end of the first winding; the second winding including a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line being arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0009] A radio frequency front-end module includes a substrate, a first transformer, and a first chip disposed on the substrate, the first chip including a first amplifying transistor; the first transformer including a first winding and a second winding coupled to each other, the first end of the first winding being connected to the first amplifying transistor, and the second end of the first winding being configured to be connected to a ground terminal or a power supply terminal; the first winding including a main line connected between the first end of the first winding and the second end of the first winding; the second winding including a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line being arranged following each other; a portion of the main line segment is disposed on the first chip, another portion of the main line segment is disposed on the substrate, and a portion of the secondary line segment is disposed on the first chip, another portion of the secondary line segment is disposed on the substrate; a distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding, and a distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

[0010] A radio frequency front-end module comprises a substrate; a first amplifying unit, a second amplifying unit, a first transformer and a first output matching circuit arranged on the substrate; the output end of the first amplifying unit is connected to the first transformer, and the output end of the second amplifying unit is connected to the first output matching circuit; wherein the first transformer comprises a first winding and a second winding coupled to each other, the first winding comprises a first main line connected between the first end of the first winding and the second end of the first winding; the second winding comprises a first secondary line connected between the first end of the second winding and the second end of the second winding, the first main line and the first secondary line being arranged following each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0011] A radio frequency front-end module, comprising: a substrate; a first amplifying unit and a third amplifying unit, a first transformer and a second transformer arranged on the substrate; the output end of the first amplifying unit is connected to the first transformer, and the output end of the third amplifying unit is connected to the second transformer; wherein the first transformer comprises a first winding and a second winding coupled to each other, the first winding comprises a first main line connected between the first end of the first winding and the second end of the first winding; the second winding comprises a first secondary line connected between the first end of the second winding and the second end of the second winding, the first main line and the first secondary line being arranged following each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second winding is less than a first value. The distance between the first and second ends of the second winding is less than a second value, and the second value is the distance between the first end of the second winding and the second end of the second winding; wherein the second transformer includes a third winding and a third winding coupled to each other, and the third winding includes a second main line connected between the first end of the third winding and the second end of the first winding; the fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding, and the second main line and the second secondary line are arranged following each other; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, and the third value is the distance between the first end of the third winding and the second end of the fourth winding, and the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, and the fourth value is the distance between the first end of the four windings and the second end of the fourth winding.

[0012] In this embodiment, the RF power amplifier includes an RF amplification unit; a first transformer, the first transformer is connected to the RF amplification unit; the first transformer includes a first winding and a second winding coupled to each other; the first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, and the second end of the first winding is less than a first value. The distance between the second ends of the second windings is less than a second value, and the second value is the distance between the first end of the second winding and the second end of the second winding; by making the main line and the secondary line follow each other, and the distance between the first end of the first winding and the first end of the second winding is less than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than the distance between the first end of the second winding and the second end of the second winding; thereby, while ensuring the overall performance of the RF power amplifier, not only can the first transformer layout be flexibly set, but the loss and occupied area can also be further reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0014] FIG1 is a schematic structural diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0015] FIG2 is another structural diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0016] FIG3 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0017] FIG4 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0018] FIG5 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0019] FIG6 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0020] FIG7 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0021] FIG8 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0022] FIG9 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0023] FIG10 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0024] FIG11 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0025] FIG12 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0026] FIG13 is another circuit diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0027] FIG14 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0028] FIG15 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0029] FIG16 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0030] FIG17 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0031] FIG18 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0032] FIG19 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0033] FIG20 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0034] FIG21 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0035] FIG22 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0036] FIG23 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0037] FIG24 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0038] FIG25 is another circuit diagram of the RF front-end module in one embodiment of the present application;

[0039] FIG26 is another circuit diagram of the RF front-end module according to an embodiment of the present application;

[0040] FIG27 is another circuit diagram of the RF front-end module according to an embodiment of the present application;

[0041] FIG28 is another circuit diagram of the RF front-end module according to an embodiment of the present application;

[0042] FIG29 is another circuit diagram of the RF front-end module in one embodiment of the present application. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0044] It should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present application to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0045] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0046] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0047] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and " / the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, identify the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0048] In order to fully understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0049] This embodiment provides a radio frequency power amplifier (RFPA), which is used to amplify low-power signals in the transmit path of an RF front-end module (RFFEM). The RFFEM also includes two or more discrete components, such as an RF switch, a low-noise amplifier, a filter, and a duplexer. Specifically, the RFFEM can be used in communication devices such as smartphones, tablets, and smartwatches.

[0050] A radio frequency power amplifier, as shown in Figure 1, includes a radio frequency amplification unit; a first transformer, the first transformer being connected to the radio frequency amplification unit; the first transformer including a first winding 11 and a second winding 12 coupled to each other, the first winding including a main line connected between a first end of the first winding 11 and a second end of the first winding; the second winding 12 including a secondary line connected between a first end of the second winding and a second end of the second winding, the main line and the secondary line being arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0051] The RF amplification unit may be an amplification unit composed of at least one power amplification transistor. For example, the power amplification transistor may be any type of transistor, such as a bipolar junction transistor, a metal-oxide semiconductor field-effect transistor, or the like. The RF amplification unit may be any type of amplification unit, such as a single-ended amplification unit, a differential amplification unit, a Doherty power amplification unit, or a balanced power amplification unit.

[0052] In at least one embodiment, the first transformer is connected to the input end of the RF amplification unit, and the first transformer is an input-stage transformer of the RF power amplifier. Alternatively, the first transformer is connected to the output end of the RF amplification unit, and the first transformer is an output-stage transformer of the RF power amplifier.

[0053] In at least one embodiment, the main wire of the first winding 11 and the secondary wire of the second winding 12 are arranged in a mutually following arrangement, that is, the direction in which the main wire extends from the first end to the second end of the first winding is the same as the direction in which the secondary wire extends from the first end to the second end of the second winding. The extension direction can be an extension direction of any angle and shape. For example, if the main wire of the first winding 11 is arranged in a straight line, the secondary wire of the second winding 12 is also arranged in a straight line. Alternatively, if the main wire of the first winding 11 is arranged in an L shape, the secondary wire of the second winding 12 is also arranged in an L shape. Alternatively, if the main wire of the first winding 11 is arranged in an arc shape, the secondary wire of the second winding 12 is also arranged in an arc shape. It should be noted that this embodiment does not impose any specific restrictions on the shape of the main wire of the first winding 11 and the secondary wire of the second winding 12; it is sufficient to ensure that the main wire and the secondary wire are arranged in a mutually following arrangement.

[0054] In at least one embodiment, the distance between the first end of the first winding 11 and the first end of the second winding 12 is less than a first value, which is the distance between the first end of the first winding 11 and the second end of the first winding 11, and the distance between the second end of the first winding 11 and the second end of the second winding 12 is less than a second value, which is the distance between the first end of the second winding 12 and the second end of the second winding.

[0055] The first value is the straight-line distance between the first end of the first winding 11 and the second end of the first winding 11, and the second value is the straight-line distance between the first end of the second winding 12 and the second end of the second winding 12. As an example, when the primary wire of the first winding 11 is arranged in a straight line, the distance between the first end of the first winding 11 and the second end of the first winding 11 is equal to the length of the primary wire. Similarly, when the secondary wire of the first winding 12 is arranged in a straight line, the distance between the first end of the second winding 12 and the second end of the first winding 12 is equal to the length of the secondary wire.

[0056] In at least one embodiment, because the main line and the secondary line are arranged in a mutually following manner, the first end of the first winding is adjacent to the first end of the second winding, and the second end of the first winding is adjacent to the second end of the second winding. Specifically, in this embodiment, the distance between the first end of the first winding and the first end of the second winding is smaller than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is smaller than the distance between the first end of the second winding and the second end of the second winding. While ensuring the degree of coupling between the main line of the first winding and the secondary line of the second winding, this embodiment allows for flexible positioning of the two ports of the first winding and the two ports of the second winding. Furthermore, because the radii of the first and second windings in this implementation are infinite, the Q factor (quality factor) of the first transformer can be improved. Furthermore, because the main line and the secondary line are arranged in a mutually following manner, no additional jumpers are introduced, resulting in reduced losses and a smaller footprint.

[0057] In this embodiment, the RF power amplifier includes an RF amplification unit; a first transformer, the first transformer is connected to the RF amplification unit; the first transformer includes a first winding and a second winding coupled to each other; the first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, and the second end of the first winding is less than a first value. The distance between the second ends of the second windings is less than a second value, and the second value is the distance between the first end of the second winding and the second end of the second winding; by making the main line and the secondary line follow each other, and the distance between the first end of the first winding and the first end of the second winding is less than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than the distance between the first end of the second winding and the second end of the second winding; thereby, while ensuring the overall performance of the RF power amplifier, not only can the first transformer layout be flexibly set, but the loss and occupied area can also be further reduced.

[0058] In a specific embodiment, the distance between the first end of the first winding and the first end of the second winding is less than twice the line width of the main line or the secondary line; the distance between the second end of the first winding and the second end of the second winding is less than twice the line width of the main line or the secondary line.

[0059] As shown in Figure 4 below, the distance between the first end of the first winding and the first end of the second winding is less than twice the line width X1 of the main line. Alternatively, the distance between the first end of the first winding and the first end of the second winding is less than twice the line width X2 of the secondary line. Similarly, the distance between the second end of the first winding and the second end of the second winding is less than twice the line width of the main line X1, or the distance between the second end of the first winding and the second end of the second winding is less than twice the line width of the secondary line X2. The line width X1 of the main line and the line width X2 of the secondary line can be the same or different.

[0060] In at least one embodiment, if the line width X1 of the main line is smaller than the line width X2 of the secondary line, the distance between the first end of the first winding and the first end of the second winding is smaller than the line width X1 of the main line. If the line width X2 of the secondary line is smaller than the line width X2 of the main line, the distance between the first end of the first winding and the first end of the second winding is smaller than the line width X2 of the secondary line. Similarly, if the line width X1 of the main line is smaller than the line width X2 of the secondary line, the distance between the second end of the first winding and the second end of the second winding is smaller than the line width X1 of the main line. If the line width X2 of the secondary line is smaller than the line width X2 of the main line, the distance between the second end of the first winding and the second end of the second winding is smaller than the line width X2 of the secondary line.

[0061] This embodiment arranges the main line and the secondary line following each other, and limits the distance between the first end of the first winding and the first end of the second winding to be less than twice the line width of the main line or the secondary line; and the distance between the second end of the first winding and the second end of the second winding is less than twice the line width of the main line or the secondary line; thereby not only achieving flexible arrangement of the first transformer layout, but also further reducing losses and occupied area.

[0062] In a specific embodiment, the distance between the first end of the first winding and the first end of the second winding is greater than or equal to half of the line width of the main line or the secondary line, and less than or equal to the line width of the main line or the secondary line; the distance between the second end of the first winding and the second end of the second winding is greater than or equal to half of the line width of the main line or the secondary line, and less than or equal to the line width of the main line or the secondary line.

[0063] Referring to FIG4 below, the distance between the first end of the first winding and the first end of the second winding is greater than or equal to half the line width X1 of the main line, and less than or equal to the line width X1 of the main line. Alternatively, the distance between the first end of the first winding and the first end of the second winding is greater than or equal to half the line width X2 of the secondary line, and less than or equal to the line width X2 of the secondary line. Similarly, the distance between the second end of the first winding and the second end of the second winding is greater than or equal to half the line width X1 of the main line, and less than or equal to the line width X1 of the main line. Alternatively, the distance between the second end of the first winding and the second end of the second winding is greater than or equal to half the line width X2 of the secondary line, and less than or equal to the line width X2 of the secondary line.

[0064] This embodiment arranges the main line and the secondary line to follow each other, and limits the distance between the first end of the first winding and the first end of the second winding to be greater than or equal to half the line width of the main line or the secondary line, and less than or equal to the line width of the main line or the secondary line; the distance between the second end of the first winding and the second end of the second winding is greater than or equal to half the line width of the main line or the secondary line, and less than or equal to the line width of the main line or the secondary line; thereby not only achieving flexible arrangement of the first transformer layout, but also further reducing losses and occupied area.

[0065] In a specific embodiment, the radio frequency amplification unit includes a first amplifying transistor, the first end of the first winding is connected to the first amplifying transistor, and the second end of the first winding is configured to be connected to a ground end or a power supply end.

[0066] In at least one embodiment, the first end of the first winding is connected to the input end of the first amplifying transistor, and the first transformer is an input-stage transformer of a radio frequency power amplifier. Alternatively, the first end of the first winding is connected to the output end of the first amplifying transistor, and the first transformer is an output-stage transformer of the radio frequency power amplifier.

[0067] In at least one embodiment, the second end of the first winding is configured to be grounded, and other passive components (for example, capacitor components) can be connected to the path between the first amplifying transistor and the second end of the first winding to participate in impedance matching together with the first transformer, thereby improving the flexibility of impedance transformation of the RF power amplifier.

[0068] In at least one embodiment, the second end of the first winding is configured to be connected to a power supply terminal. The power supply voltage at the power supply terminal is transmitted to the first amplifying transistor via the first winding to power the first amplifying transistor and ensure normal operation of the first amplifying transistor. By utilizing the first winding to transmit the power supply voltage from the power supply terminal to the first amplifying transistor, the RF power amplifier eliminates the need for an additional power supply inductor connected to the power supply terminal, thereby reducing components and, consequently, the overall footprint.

[0069] In a specific embodiment, as shown in FIG2 below, the amplifying unit includes a first amplifying transistor 10 and a second amplifying transistor 20 , the first end of the first winding is connected to the first amplifying transistor, and the second end of the first winding is connected to the second amplifying transistor.

[0070] In at least one embodiment, the first amplifying transistor 10 and the second amplifying transistor 20 form a differential amplifier circuit, and the phase of the first RF signal RFIN1 input to the input terminal of the first amplifying transistor and the phase of the second RF signal RFIN2 input to the input terminal of the second amplifying transistor differ by 180 degrees. Optionally, the first RF signal and the second RF signal can be two differential signals converted from a single RF input signal via a power divider, or can be two differential signals amplified by two pre-amplifier stages.

[0071] In at least one implementation, the first amplifier transistor 10 may be a bipolar junction transistor (BJT), a field effect transistor (FET), or the like. The second amplifier transistor 20 may be a bipolar junction transistor (BJT), a field effect transistor (FET), or the like. In at least one implementation, the first amplifier transistor 10 is a heterojunction transistor (HBT), and the second amplifier transistor 20 is a heterojunction transistor (HBT). For example, the first amplifier transistor 10 is a heterojunction transistor implemented using a GaAs process, and the second amplifier transistor 20 is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the first amplifier transistor 10 is an NPN transistor, and the second amplifier transistor 20 is an NPN transistor.

[0072] It can be understood that the differential amplifier circuit composed of the first amplifier transistor 10 and the second amplifier transistor 20 can be any amplifier stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the differential power amplifier unit in this embodiment can be any amplifier stage (i.e., the driving stage or the output stage) in the above-mentioned RF power amplifier.

[0073] In a specific embodiment, the first end of the first winding and the first end of the second winding are arranged adjacent to the amplifying unit, and the second end of the first winding and the second end of the second winding are arranged away from the RF amplifying unit relative to the first end of the first winding and the first end of the second winding.

[0074] In at least one embodiment, the first end of the first winding and the first end of the second winding are arranged adjacent to the amplification unit, and the RF amplification unit is arranged to the left of the first end of the first winding and the first end of the second winding. The second end of the first winding and the second end of the second winding can be arranged to the right of the first end of the first winding and the first end of the second winding, or the second end of the first winding and the second end of the second winding can be arranged in an area to the upper right, lower right, or right of the first end of the first winding and the first end of the second winding. The second end of the first winding and the second end of the second winding can be arranged in the same area to the upper right, lower right, or right, or they can be in different areas. It can be understood that the right and right sides mentioned in this embodiment are the right and right sides relative to the first RF amplification chip and / or the first end of the first winding and the first end of the second winding.

[0075] In a specific embodiment, the first end of the second winding is connected to the signal transmission end, and the second end of the second winding is grounded; or the second end of the second winding is connected to the signal transmission end, and the first end of the second winding is grounded. The signal transmission end may be a signal input end or a signal output end.

[0076] In at least one embodiment, the signal transmission end is used to connect to the subsequent circuit / component. Since the first end of the second winding is arranged adjacent to the first end of the first winding, when the subsequent circuit / component is arranged adjacent to the first amplifying transistor, the first end of the second winding is connected to the signal transmission end, and the second end of the second winding is grounded. When the other components are arranged away from the first amplifying transistor, the second end of the second winding is connected to the signal transmission end, and the first end of the second winding is grounded. The first and second ends of the second winding can be flexibly adjusted and arranged according to the position of the subsequent circuit / component. Therefore, under the premise of ensuring that the first end of the second winding is arranged adjacent to the first end of the first winding, it is also possible to avoid the connection line between the first end of the second winding and the subsequent circuit / component being too long and causing excessive insertion loss, thereby reducing the overall loss of the RF power amplifier.

[0077] In a specific embodiment, the distance between the first end of the first winding and the first end of the second winding is in the range of [2um, 40um], and the distance between the second end of the first winding and the second end of the second winding is in the range of [2um, 40um].

[0078] In at least one embodiment, since the degree of coupling between the main line and the secondary line is related to the coupling distance between the main line and the secondary line, in order to ensure that the main line and the secondary line are arranged to follow each other while also ensuring the degree of coupling between the main line and the secondary line, the distance between the first end of the first winding and the first end of the second winding cannot be too large, and the distance between the second end of the first winding and the second end of the second winding cannot be too large. In this embodiment, the distance between the first end of the first winding and the first end of the second winding is in the range of [2um, 40um], and the distance between the second end of the first winding and the second end of the second winding is in the range of [2um, 40um]. For example, the distance between the first end of the first winding and the first end of the second winding is 5um, 10um, 20um, 30um, etc. The distance between the second end of the first winding and the second end of the second winding is 5um, 10um, 20um, 30um, etc.

[0079] It should be noted that the distance between the first end of the first winding and the first end of the second winding and the distance between the second end of the first winding and the second end of the second winding may be the same as or different from each other.

[0080] In this embodiment, the distance range between the first end of the first winding and the first end of the second winding is [2um, 40um], and the distance range between the second end of the first winding and the second end of the second winding is [2um, 40um]; thereby, while achieving flexible setting of the layout of the transformer, the coupling degree between the first winding and the second winding can also be improved.

[0081] In a specific embodiment, the first transformer is provided on a chip; the distance between the first end of the first winding and the first end of the second winding is in the range of [2 μm, 15 μm]; and the distance between the second end of the first winding and the second end of the second winding is in the range of [2 μm, 15 μm]. For example, the distance between the first end of the first winding and the first end of the second winding is 5 μm, 8 μm, 12 μm, 14 μm, etc. The distance between the second end of the first winding and the second end of the second winding is 5 μm, 8 μm, 12 μm, 14 μm, etc.

[0082] In at least one embodiment, since the area on the chip is relatively limited, when the first transformer is set on the chip, by making the distance between the first end of the first winding and the first end of the second winding range from [2um, 15um]; and the distance between the second end of the first winding and the second end of the second winding range from [2um, 15um], not only can the first transformer layout be flexibly set, but the occupied area of ​​the first transformer can also be reduced.

[0083] In a specific embodiment, the first transformer is arranged on a substrate; the distance between the first end of the first winding and the first end of the second winding is in the range of [10um, 40um]; the distance between the second end of the first winding and the second end of the second winding is in the range of [10um, 40um].

[0084] In at least one embodiment, since the available area on the substrate is large, when the first transformer is arranged on the substrate, the flexibility of the layout setting of the first transformer can be further improved by making the distance between the first end of the first winding and the first end of the second winding range from [10um, 40um]; and the distance between the second end of the first winding and the second end of the second winding range from [10um, 40um].

[0085] In a specific embodiment, the distance between the first end of the first winding 11 and the first end of the second winding 12 is less than half of the first value, and the distance between the second end of the first winding 11 and the second end of the second winding 12 is less than half of the second value.

[0086] In at least one embodiment, in order to ensure the coupling degree between the first winding 11 and the second winding, the distance between the first end of the first winding 11 and the first end of the second winding 12 cannot be too large, and the distance between the second end of the first winding 11 and the second end of the second winding 12 cannot be too large. This embodiment limits the distance between the first end of the first winding 11 and the first end of the second winding 12 to be less than half of the first value, and the distance between the second end of the first winding 11 and the second end of the second winding 12 to be less than half of the second value, wherein the first value is the distance between the first end of the first winding and the second end of the first winding, and the second value is the distance between the first end of the second winding and the second end of the second winding. This ensures the coupling degree between the first winding and the second winding while improving the quality factor (Q value) of the first transformer, thereby reducing the overall loss of the RF power amplifier.

[0087] In a specific embodiment, the first winding includes a first primary wire and a second primary wire connected in parallel, and the second winding includes a first secondary wire, which is arranged between the first primary wire and the second primary wire.

[0088] In at least one embodiment, as shown in FIG5 below, by dividing the first winding into a first main line and a second main line connected in parallel, and arranging the first secondary line between the first main line and the second main line, it is possible to flexibly adjust the turns ratio between the first winding and the second winding while ensuring the coupling degree between the first winding and the second winding.

[0089] It can be understood that the first winding includes but is not limited to a first primary line and a second primary line connected in parallel, and the second winding includes but is not limited to a first secondary line; the first winding may also include a third primary line and a fourth primary line, etc. The second winding may also include a second secondary line and a third secondary line, etc. The more primary lines connected in parallel the first winding includes, the smaller the equivalent inductance of the first winding. The more secondary lines connected in parallel the second winding includes, the smaller the equivalent inductance of the second winding. The number of primary lines connected in parallel included in the first winding and the number of secondary lines connected in parallel included in the second winding can be set according to actual conditions. In this embodiment, in order to ensure the coupling between the first winding and the second winding, the primary lines connected in parallel included in the first winding and the secondary lines connected in parallel included in the second winding are spaced apart.

[0090] The difference between the length of the first main line and the length of the first secondary line is equal to the difference between the length of the first secondary line and the length of the second main line, or the length of the first main line is equal to the length of the second main line.

[0091] In at least one embodiment, since the first secondary line is arranged between the first main line and the second main line, when the first main line, the second main line and the first secondary line are arranged in a straight line, the length of the first main line, the length of the second main line and the length of the first secondary line tend to be the same. When the first main line, the second main line and the first secondary line are L-shaped, U-shaped or other shapes, the length of the first main line, the length of the second main line and the length of the first secondary line are not the same. This embodiment limits the difference between the length of the first main line and the length of the first secondary line to be equal to the difference between the length of the first secondary line and the length of the second main line, or the length of the first main line is equal to the length of the second main line, so as to ensure the coupling degree between the first winding and the second winding while achieving the flexibility of setting the first winding and the second winding, and reducing the loss caused by the first winding and the second winding.

[0092] As an example, assuming that the length of the first secondary line is X, the length of the first main line is XA, and the length of the second main line is X+A, the total length of the first main line and the second main line is 2X, which is twice the length of the first secondary line X. As another example, assuming that the length of the first secondary line is X, the length of the first main line is X, and the length of the second main line is X, the total length of the first main line and the second main line is 2X, which is twice the length of the first secondary line X. This ensures that the first winding and the second winding can be flexibly arranged while ensuring the coupling between the first winding and the second winding and reducing the losses caused by the first winding and the second winding.

[0093] In a specific embodiment, the main line and the secondary line are coupled in the same layer, or the main line and the secondary line are coupled in upper and lower layers.

[0094] Referring to (a) of FIG. 13 below, the main line 11 and the secondary line 12 are coupled in the same layer; referring to (b) of FIG. 11 below, the main line 11 and the secondary line 12 are coupled in upper and lower layers.

[0095] In a specific embodiment, referring to Figure 8 below, the first main line includes a first main line segment 111 and a second main line segment 112, the first main line segment 111 is connected to the first end of the first winding, and the second main line segment 112 is connected to the second end of the first winding, the second main line includes a third main line segment 113 and a fourth main line segment 114, the third main line segment 113 is connected to the first end of the first winding, and the fourth main line segment 114 is connected to the second end of the first winding; the first main line segment 111 is connected to the fourth main line segment 114 through a first jumper 11a, and the third main line segment 113 is connected to the second main line segment 112 through a second jumper 11b; thereby, the lengths of the first main line and the second main line are ensured to be the same, thereby improving the balance while ensuring the coupling degree.

[0096] In a specific embodiment, referring to FIG9 below, the first secondary line includes a first secondary line segment 121 and a second secondary line segment 122, the first secondary line segment 12 is connected to the first end of the second winding, the second secondary line segment 122 is connected to the second end of the second winding, the second secondary line includes a third secondary line segment 123 and a fourth secondary line segment 124, the third secondary line segment 123 is connected to the first end of the second winding, the fourth secondary line segment 124 is connected to the second end of the second winding, the first secondary line segment 121 is connected to the fourth secondary line segment 124 through a third jumper 12a, and the third secondary line segment 123 is connected to the second secondary line segment 122 through a fourth jumper 12b; thereby, the lengths of the first secondary line and the second secondary line are ensured to be the same, thereby improving the balance while ensuring the coupling degree.

[0097] In a specific embodiment, as shown in FIG8 below, the first main segment 111 includes a first main segment portion 1111 and a second main segment portion 1112 connected in series, and the angle between the first main segment portion 1111 and the second main segment portion 1112 is a first angle. Preferably, the first angle is greater than or equal to 90°. The first angle can be the angle formed by directly connecting the first main segment portion 1111 and the second main segment portion 1112, or can be an arc angle formed by connecting them via a small arc segment. For example, the angle between the first main segment portion 1111 and the second main segment portion 1112 can be any angle, such as 90°, 120°, 135°, or 150°. The second main line segment 112 includes a third main line segment portion 1121 and a fourth main line segment portion 1122 connected in series. The third main line segment portion 1121 and the second main line segment portion 1112 are on the same virtual straight line, and the angle between the third main line segment portion 1121 and the fourth main line segment portion 1122 is a second angle. Preferably, the second angle is greater than or equal to 90°. The second angle can be the angle formed by the direct connection between the third main line segment portion 1121 and the fourth main line segment portion 1122, or the angle formed by connecting them via a small arc. For example, the angle between the third main line segment portion 1121 and the fourth main line segment portion 1122 can be any angle, such as 90°, 120°, 135°, or 150°. This ensures that the first main line and the second main line are of equal length, thereby improving balance while maintaining coupling.

[0098] In a specific embodiment, as shown in FIG9 below, the first secondary line segment 121 includes a first line segment portion 1211 and a second line segment portion 1212 connected in series. The angle between the first line segment portion 1211 and the second line segment portion 1212 is a third angle. Preferably, the third angle is greater than or equal to 90°. The third angle can be the angle formed by directly connecting the first line segment portion 1211 and the second line segment portion 1212, or it can be an arc angle formed by connecting them via a small arc segment. For example, the angle between the first line segment portion 1211 and the second line segment portion 1212 can be any angle, such as 90°, 120°, 135°, or 150°. The second secondary line segment 122 includes a third line segment portion 1221 and a fourth line segment portion 1222 connected in series. The third line segment portion 1221 and the second line segment portion 1212 are on the same virtual straight line, and the angle between the third line segment portion 1221 and the fourth line segment portion 1222 is a fourth angle. The fourth angle is greater than or equal to 90°. The fourth angle can be the angle formed by directly connecting the third line segment portion 1221 and the second line segment portion 1212, or can be an arc angle formed by connecting them via a small arc. For example, the angle between the third line segment portion 1221 and the second line segment portion 1212 can be any angle, such as 90°, 120°, 135°, or 150°. This ensures that the lengths of the first secondary line and the second secondary line are the same, thereby improving balance while ensuring coupling.

[0099] In a specific embodiment, the second winding includes a first secondary wire and a second secondary wire connected in parallel, and the first winding includes a first main wire, which is arranged between the first secondary wire and the second secondary wire.

[0100] In at least one embodiment, as shown in FIG3 below, by dividing the second winding into a first secondary line and a second secondary line connected in parallel, and arranging the first primary line between the first secondary line and the second secondary line, it is possible to flexibly adjust the turns ratio between the first winding and the second winding while ensuring the coupling degree between the first winding and the second winding.

[0101] It can be understood that the second winding includes but is not limited to a first secondary wire and a second secondary wire connected in parallel, and the first winding includes but is not limited to a first primary wire; the second winding may also include a third secondary wire and a fourth secondary wire, etc. The first winding may also include a second primary wire and a third primary wire, etc. The more primary wires connected in parallel the first winding includes, the smaller the equivalent inductance of the first winding. The more secondary wires connected in parallel the second winding includes, the smaller the equivalent inductance of the second winding. The number of primary wires connected in parallel included in the first winding and the number of secondary wires connected in parallel included in the second winding can be set according to actual conditions. In this embodiment, in order to ensure the coupling between the first winding and the second winding, the primary wires connected in parallel included in the first winding and the secondary wires connected in parallel included in the second winding are spaced apart.

[0102] The difference between the length of the first secondary line and the length of the first main line is equal to the difference between the length of the first main line and the length of the second secondary line, or the length of the first secondary line is equal to the length of the second secondary line.

[0103] In at least one embodiment, since the first primary line is arranged between the first secondary line and the second secondary line, when the first secondary line, the second secondary line and the first primary line are arranged in a straight line, the length of the first secondary line, the length of the second secondary line and the length of the first primary line tend to be the same. When the first secondary line, the second secondary line and the first primary line are L-shaped, U-shaped or other shapes, the length of the first secondary line, the length of the second secondary line and the length of the first primary line are different. This embodiment limits the difference between the length of the first secondary line and the length of the first primary line to be equal to the difference between the length of the first primary line and the length of the second secondary line, or the length of the first secondary line is equal to the length of the second secondary line, so as to ensure the coupling degree between the first winding and the second winding while achieving the flexibility of the arrangement of the first winding and the second winding, and reduce the loss caused by the first winding and the second winding.

[0104] As an example, assuming the length of the first primary line is X, the length of the first secondary line is XA, and the length of the second secondary line is X+A, the total length of the first secondary line and the second secondary line is 2X, which is twice the length of the first primary line X. As another example, assuming the length of the first secondary line is X, the length of the first primary line is X, and the length of the second secondary line is X, the total length of the first secondary line and the second secondary line is 2X, which is twice the length of the first primary line X. This ensures that the first winding and the second winding can be flexibly arranged while ensuring the coupling between the first winding and the second winding and reducing the losses caused by the first winding and the second winding.

[0105] In a specific embodiment, as shown in FIG11 below, the first winding 11 includes a first primary wire, a second primary wire, and a third primary wire connected in parallel, and the second winding 12 includes a first secondary wire and a second secondary wire. The first secondary wire is arranged between the first and second primary wires, and the second secondary wire is arranged between the second and third primary wires. It is understood that the secondary wires and the primary wires are arranged alternately.

[0106] In a specific embodiment, the second winding 12 includes a first secondary wire, a second secondary wire, and a third secondary wire connected in parallel, and the first winding 11 includes a first primary wire and a second primary wire, the first primary wire being arranged between the first secondary wire and the second secondary wire, and the second primary wire being arranged between the second secondary wire and the third secondary wire. It is understood that the secondary wires and the primary wires are arranged alternately with each other.

[0107] In a specific embodiment, the difference in length between the main line and the secondary line is a first difference, wherein the first difference is less than or equal to 20 percent of the length of the main line or the secondary line.

[0108] In at least one embodiment, the longer the main line, the greater the equivalent inductance of the main line, and the longer the secondary line, the greater the equivalent inductance of the main line. Because the main line and the secondary line are arranged to follow each other, the coupling between the main line and the secondary line is optimal when the length of the main line and the length of the secondary line are exactly equal. This embodiment limits the difference in length between the main line and the secondary line to a first difference value, wherein the first difference value is less than or equal to 20% of the length of the main line or the secondary line. This allows for flexible layout of the transformer while also improving the coupling between the first winding and the second winding.

[0109] In a specific embodiment, referring to FIG. 1 to FIG. 12 below, the extension direction of the main line from the first end to the second end of the first winding is the same as the extension direction of the secondary line from the first end to the second end of the second winding.

[0110] In at least one embodiment, the main wire can extend in at least one direction from the first end to the second end of the first winding, and the secondary wire can extend in at least one direction from the first end to the second end of the second winding. The only requirement is that the direction in which the main wire extends from the first end to the second end of the first winding and the direction in which the secondary wire extends from the first end to the second end of the second winding are the same. Furthermore, the main wire and the secondary wire in this embodiment can extend in any direction, and this embodiment does not impose any specific restrictions on their extension directions.

[0111] As an example, the main wire extends horizontally or vertically from the first end to the second end of the first winding, and the secondary wire extends horizontally or vertically from the first end to the second end of the second winding. Alternatively, the main wire is first arranged horizontally and then vertically from the first end to the second end of the first winding, and the secondary wire is also first arranged horizontally and then vertically from the first end to the second end of the second winding.

[0112] In this embodiment, the extension direction of the main line from the first end to the second end of the first winding is the same as the extension direction of the secondary line from the first end to the second end of the second winding; thereby ensuring flexible setting of the layout of the main line and the secondary line while improving the coupling between the main line and the secondary line.

[0113] In a specific embodiment, referring to FIG. 1 to FIG. 3 below, the main line and the secondary line are both arranged in a straight line.

[0114] In at least one embodiment, because the first transformer is connected to the single-ended first amplifying transistor, when the main line and the secondary line are both arranged in a straight line, the radius of the main line and the secondary line is infinite, and the quality factor of the main line and the secondary line is high and the loss is low. In addition, when the main line and the secondary line are both arranged in a straight line, the main line and the secondary line occupy a small area, and the arrangement of the main line and the secondary line can be flexibly adjusted according to the overall layout of the RF power amplifier.

[0115] It should be noted that this embodiment does not specifically limit the direction and angle in which the main line and the secondary line are arranged in a straight line. The main line and the secondary line can be arranged in a straight line along the horizontal direction, or the main line and the secondary line can be arranged in a straight line along the vertical direction, or the main line and the secondary line can be arranged in a straight line along any direction. The direction in which the main line and the secondary line are arranged in a straight line is mainly related to the position of the next-level component / circuit connected to the second winding, thereby achieving flexible setting while reducing the loss caused by the jumper.

[0116] In a specific embodiment, as shown in FIG10 below, the main line and the secondary line are both arranged in an arc shape.

[0117] In at least one embodiment, by configuring both the main line and the secondary line in an arc shape, the length of the main line and the secondary line can be increased within a limited area, thereby increasing the inductance of the main line and the secondary line, and thereby improving the coupling. In this embodiment, the central angle of the arc of the main line and the secondary line can be set to any angle according to actual needs.

[0118] In a specific embodiment, a central angle between the arcs of the main line and the secondary line is greater than or equal to 90 degrees.

[0119] In at least one embodiment, by making the central angle of the arc of the main line and the secondary line greater than or equal to 90 degrees, the discontinuity of the transmission signal can be reduced, the area utilization rate can be improved, and the overall performance of the first transformer can be improved.

[0120] In a specific embodiment, the first winding includes N first connecting segments connected in series, and the second winding includes M second connecting segments connected in series. The angle between two adjacent first connecting segments is greater than or equal to 90°, and the angle between two adjacent second connecting segments is greater than or equal to 90°, where N is a positive integer greater than or equal to 2. The lengths and extension directions of the N first connecting segments may be the same or different, and the N first connecting segments may extend in any direction. The lengths and extension directions of the M second connecting segments may be the same or different, and the M second connecting segments may extend in any direction.

[0121] In at least one embodiment, when the angle between two adjacent first connecting segments is less than 90°, the signal directions between the two adjacent first connecting segments are opposite, which not only causes signal discontinuity at the corner, but also the signals between the two adjacent first connecting segments cancel each other out, thereby affecting signal transmission performance. Therefore, this embodiment makes the angle between two adjacent first connecting segments greater than or equal to 90°, thereby not only avoiding signal discontinuity at the corner, but also improving signal transmission quality. Similarly, when the angle between two adjacent second connecting segments is less than 90°, the signal directions between the two adjacent second connecting segments are opposite, which not only causes signal discontinuity at the corner, but also the signals between the two adjacent second connecting segments cancel each other out, thereby affecting signal transmission performance. Therefore, this embodiment makes the angle between two adjacent second connecting segments greater than or equal to 90°, thereby not only avoiding signal discontinuity at the corner, but also improving signal transmission quality.

[0122] In a specific embodiment, referring to Figures 4 to 5 below, the first winding includes two first connecting segments connected in series, and the angle between the two first connecting segments is 90 degrees, and / or the second winding includes two second connecting segments connected in series, and the angle between the two second connecting segments is 90 degrees.

[0123] It can be understood that the angle between the two first connecting sections is 90 degrees, that is, the first winding can be arranged in an L shape. The angle between the two second connecting sections is 90 degrees, that is, the second winding can be arranged in an L shape.

[0124] In at least one embodiment, the first winding includes two first connecting segments connected in series, and the angle between the two first connecting segments is 90 degrees, and / or the second winding includes two second connecting segments connected in series, and the angle between the two second connecting segments is 90 degrees; thereby not only avoiding the occurrence of a pointed antenna effect, resulting in discontinuity of the signal at the corner, but also improving the area utilization of the first transformer, thereby further improving the overall performance of the RF power amplifier.

[0125] In a specific embodiment, referring to Figures 6 to 7 below, the first winding includes three first connection segments connected in series, and the angle between two adjacent first connection segments is 90 degrees; the second winding includes three second connection segments connected in series; the angle between two adjacent second connection segments is 90 degrees.

[0126] It can be understood that the angle between two adjacent first connection segments among the three first connection segments is 90 degrees, that is, the first winding can be arranged in a Z shape. The angle between two adjacent second connection segments among the three second connection segments is 90 degrees, that is, the second winding can be arranged in a Z shape.

[0127] In at least one embodiment, by making the angle between two adjacent first connection segments among the three first connection segments be 90 degrees, and / or the angle between two adjacent second connection segments among the three second connection segments be 90 degrees, not only can the discontinuity of the signal at the corner be avoided and the area utilization of the first transformer be improved, but also the inductance of the first winding and the second winding can be increased within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0128] In a specific embodiment, the ratio of the line width of the first winding to the line width of the second winding is in the range of [1:2 to 2:1], or the ratio of the inductance of the first winding to the inductance of the second winding is in the range of [1:2 to 2:1].

[0129] In at least one embodiment, since the first winding and the second winding are arranged to follow each other, the difference between the length of the first winding and the length of the second winding is small. Therefore, in order to improve the impedance conversion ratio that can be achieved by the first winding and the second winding, this embodiment limits the range of the ratio of the line width of the first winding to the line width of the second winding to [1:2~2:1], or limits the range of the ratio of the inductance of the first winding to the inductance of the second winding to [1:2~2:1]; thereby, while ensuring performance, the impedance conversion ratio that can be achieved by the first winding and the second winding can be improved, thereby expanding the application range of the first transformer.

[0130] It can be understood that, when the lengths of the first winding and the second winding are exactly the same, the ratio of the line width of the first winding to the line width of the second winding is equal to the ratio of the inductance of the first winding to the inductance of the second winding. Furthermore, the ratio of the line width of the first winding to the line width of the second winding is positively correlated with the achievable impedance conversion ratio of the first winding to the second winding, and the ratio of the inductance of the first winding to the inductance of the second winding is positively correlated with the achievable impedance conversion ratio of the first winding to the second winding.

[0131] In a specific embodiment, the impedance of the input end of the first transformer is greater than the impedance of the output end of the first transformer, and the line width of the first winding is smaller than the line width of the second winding; the impedance of the input end of the first transformer is smaller than the impedance of the output end of the first transformer, and the line width of the first winding is greater than the line width of the second winding.

[0132] In at least one embodiment, because the primary wire of the first winding and the secondary wire of the second winding are arranged to follow each other, the inductance of the first winding and the inductance of the second winding are mainly determined by the line width of the first winding and the line width of the second winding. In this embodiment, by making the line width of the first winding and the line width of the second winding different, impedance conversion from large to small or small to large can be achieved. Specifically, the impedance of the input end of the first transformer is greater than the impedance of the output end of the first transformer, and the line width of the first winding is smaller than the line width of the second winding; the impedance of the input end of the first transformer is smaller than the impedance of the output end of the first transformer, and the line width of the first winding is greater than the line width of the second winding; thereby achieving flexible adjustment of the impedance of the input and output ends of the first transformer.

[0133] This embodiment also provides a radio frequency front-end module, as shown in Figures 14 and 15 below, including: a substrate 200, a first chip 100 arranged on the substrate 200, and a first transformer arranged on the substrate 200, the first chip 100 including a first amplifying transistor 10; the first transformer including a first winding 11 and a second winding 12 coupled to each other, the first end of the first winding 11 being connected to the first amplifying transistor 10, and the second end of the first winding 12 being configured to be connected to a ground terminal or a power supply terminal.

[0134] In at least one embodiment, the first amplifying transistor is disposed on a first chip, and the first transformer is disposed on a substrate. The first amplifying transistor disposed on the first chip and the first transformer disposed on the substrate may be connected via wire bonding or flip-chip connection. This embodiment does not specifically limit the connection method between the first amplifying transistor and the first transformer; any feasible method in the prior art may be employed.

[0135] The first chip may be manufactured based on a GaAs (gallium arsenide) process, or may be manufactured based on a CMOS (Complementary Metal Oxide Semiconductor) process, etc.

[0136] The first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, and the main line and the secondary line are arranged to follow each other.

[0137] In at least one embodiment, the main wire of the first winding 11 and the secondary wire of the second winding 12 are arranged in a mutually following arrangement, that is, the direction in which the main wire extends from the first end to the second end of the first winding is the same as the direction in which the secondary wire extends from the first end to the second end of the second winding. The extension direction can be an extension direction of any angle and shape. For example, if the main wire of the first winding 11 is arranged in a straight line, the secondary wire of the second winding 12 is also arranged in a straight line. Alternatively, if the main wire of the first winding 11 is arranged in an L shape, the secondary wire of the second winding 12 is also arranged in an L shape. Alternatively, if the main wire of the first winding 11 is arranged in an arc shape, the secondary wire of the second winding 12 is also arranged in an arc shape. It should be noted that this embodiment does not impose any specific restrictions on the shape of the main wire of the first winding 11 and the secondary wire of the second winding 12; it is sufficient to ensure that the main wire and the secondary wire are arranged in a mutually following arrangement.

[0138] The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

[0139] The first value is the straight-line distance between the first end of the first winding 11 and the second end of the first winding 11, and the second value is the straight-line distance between the first end of the second winding 12 and the second end of the second winding 12. As an example, when the primary wire of the first winding 11 is arranged in a straight line, the distance between the first end of the first winding 11 and the second end of the first winding 11 is equal to the length of the primary wire. Similarly, when the secondary wire of the first winding 12 is arranged in a straight line, the distance between the first end of the second winding 12 and the second end of the first winding 12 is equal to the length of the secondary wire.

[0140] In at least one embodiment, because the main line and the secondary line are arranged in a sequential manner, the first end of the first winding is arranged adjacent to the first end of the second winding, and the second end of the first winding is arranged adjacent to the second end of the second winding. Specifically, in this embodiment, the distance between the first end of the first winding and the first end of the second winding is smaller than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is smaller than the distance between the first end of the second winding and the second end of the second winding. This embodiment allows for flexible positioning of the two ports of the first winding and the two ports of the second winding while ensuring the degree of coupling between the main line of the first winding and the secondary line of the second winding. Furthermore, because the radii of the first and second windings in this implementation are infinite, the Q factor (quality factor) of the first transformer can be improved. Furthermore, because the main line and the secondary line are arranged in a sequential manner, no additional jumpers are introduced, resulting in lower losses and a smaller footprint.

[0141] In this embodiment, by disposing the first amplifying transistor on the first chip and the first transformer on the substrate, not only can chip area be saved, but also, due to the ample space on the substrate, the winding method of the first winding and the second winding of the first transformer can be more flexible, the coupling degree can be higher, and a larger impedance conversion ratio can be achieved.

[0142] In this embodiment, the RF front-end module includes: a substrate, a first chip arranged on the substrate, and a first transformer arranged on the substrate, the first chip including a first amplifying transistor; the first transformer including a first winding and a second winding coupled to each other, the first end of the first winding being connected to the first amplifying transistor, and the second end of the first winding being configured to be connected to a ground terminal or a power supply terminal; the first winding including a main line connected between the first end of the first winding and the second end of the first winding; the second winding including a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line being arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the second value being the distance between the first end of the first winding and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, and the second value is the distance between the first end of the second winding and the second end of the second winding; this embodiment arranges the first amplifying transistor on the first chip and the first transformer on the substrate, and arranges the main line and the secondary line of the first transformer to follow each other, and the distance between the first end of the first winding and the first end of the second winding is less than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than the distance between the first end of the second winding and the second end of the second winding; thereby, while ensuring the overall performance of the RF power amplifier, not only can the chip area be saved, but also the first transformer layout can be flexibly arranged and a higher impedance conversion ratio can be achieved.

[0143] In a specific embodiment, the first end of the second winding is connected to the ground end, and the second end of the second winding is connected to the signal transmission end, wherein the signal transmission end may be a port connected to other circuits / components.

[0144] In at least one embodiment, since the first end of the second winding is arranged adjacent to the first end of the first winding, and the second end of the second winding is arranged adjacent to the second end of the first winding; therefore, this embodiment avoids the connection jumper being too long when the second end of the second winding is connected to other circuits / components by connecting the first end of the second winding to the ground terminal and the second end of the second winding to the signal transmission terminal, thereby reducing the loss of the first transformer caused by the jumper and making the entire layout more compact and reasonable.

[0145] In a specific embodiment, the first end of the second winding is connected to a ground terminal on the first chip.

[0146] In at least one embodiment, since the first end of the second winding is arranged adjacent to the first end of the first winding, the second end of the second winding is arranged adjacent to the second end of the first winding, and the first end of the first winding is often arranged adjacent to the first chip, this embodiment saves layout space and improves space utilization by connecting the first end of the second winding to the ground terminal on the first chip when grounding, without the need for additional through holes in the substrate to connect to the ground.

[0147] In a specific embodiment, as shown in FIG15 below, the first chip further includes a first capacitor C1 , and the first end of the second winding 12 is connected to the ground end of the first chip through the first capacitor C1 .

[0148] The first capacitor is configured to participate in impedance matching together with the first transformer, improving the flexibility of impedance conversion. In this embodiment, the first end of the second winding is connected to ground via the first capacitor C1, and the first capacitor C1 is placed on the first chip, thereby saving layout space while improving the quality factor (Q value) of the RF front-end module.

[0149] In a specific embodiment, as shown in FIG15 below, the signal transmission end is configured to be connected to the first component 300 , and the second end of the first winding and the second end of the second winding are both arranged in the area between the first chip 100 and the first component 300 .

[0150] The first component 300 can be either an active or passive component. For example, the first component can be any type of component, such as a capacitor, inductor, switch, or filter. The first component can be directly disposed on the substrate or integrated on a chip and then disposed on the substrate. This embodiment does not specifically limit the type or implementation of the first component; any component connected to the signal transmission end can be used.

[0151] In this embodiment, since the first transformer is a component connected between the first amplifying transistor and the first element, in order to optimize the layout and improve space utilization, the second end of the first winding and the second end of the second winding are both disposed in the region between the first chip 100 and the first element 300. This ensures the coupling between the first winding and the second winding while making the layout of the RF front-end module more compact.

[0152] As an example, the first chip 100 is spaced apart and disposed in the left area of ​​the first component 300, wherein the area between the first chip 100 and the first component 300 includes the left area, upper left area, or lower left area of ​​the first component 300, or the right area, upper right area, or lower right area of ​​the first chip 100. It is sufficient that the area is disposed on the left side of the first component 300 and the right side of the first chip 100.

[0153] In a specific embodiment, the second end of the first winding and the second end of the second winding are disposed adjacent to the first element.

[0154] In at least one embodiment, since the second end of the first winding and the second end of the second winding are arranged adjacent to each other, and the second end of the second winding is connected to the first element through the signal transmission end, in order to reduce the jumper when the second end of the second winding is connected to the first element, the second end of the first winding and the second end of the second winding are arranged adjacent to the first element, thereby reducing the loss of the first transformer caused by the jumper and making the entire layout more compact and reasonable.

[0155] In a specific embodiment, referring to Figure 15 below, the first end of the first winding 11 is arranged adjacent to the first chip 100, and the second end of the first winding 11 is arranged away from the first chip 100 relative to the first end of the first winding; the first end of the second winding 12 is arranged adjacent to the first chip 100, and the second end of the second winding 12 is arranged away from the first chip 100 relative to the first end of the second winding.

[0156] In at least one embodiment, taking FIG. 15 as an example, the first chip is disposed on the left side of the first end of the first winding 11, and the second end of the first winding 11 is disposed on the right side of the first end of the first winding 11. The first chip is disposed on the left side of the first end of the second winding 12, and the second end of the second winding 12 is disposed on the right side of the first end of the second winding 11.

[0157] It is understandable that the second end of the first winding 11 can be set to the right of the first end of the first winding 11, and the second end of the second winding 12 can be set to the right of the first end of the second winding 12, and they are not limited to the positions shown in FIG11 . For example, the second end of the first winding 11 can be set in an area to the upper right, lower right, or right of the first end of the first winding 11, and the second end of the second winding 12 can be set in an area to the upper right, lower right, or right of the first end of the second winding 12. It is understandable that the right and right sides mentioned in this embodiment are the right and right sides relative to the first chip and / or the first end of the first winding 11 / the first end of the second winding 12.

[0158] In a specific embodiment, since the first transformer is arranged on a substrate, the distance range between the first end of the first winding and the first end of the second winding is [10um, 40um]; the distance range between the second end of the first winding and the second end of the second winding is [10um, 40um].

[0159] In at least one embodiment, since the available area on the substrate is large, when the first transformer is arranged on the substrate, the flexibility of the layout setting of the first transformer can be further improved by making the distance between the first end of the first winding and the first end of the second winding range from [10um, 40um]; and the distance between the second end of the first winding and the second end of the second winding range from [10um, 40um].

[0160] This embodiment also provides a radio frequency front-end module, as shown in Figure 16 below, including a substrate, a first chip arranged on the substrate, the first chip including a first amplifier transistor and a first transformer; the first transformer including a first winding and a second winding coupled to each other, the first end of the first winding being connected to the first amplifier transistor, and the second end of the first winding being configured to be connected to a ground terminal or a power supply terminal; the first winding including a main line connected between the first end of the first winding and the second end of the first winding; the second winding including a secondary line connected between the first end of the second winding and the second end of the second winding, the main line and the secondary line being arranged following each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

[0161] Among them, the first chip can be manufactured based on GaAs (gallium arsenide) technology, and can also be manufactured based on CMOS (Complementary Metal Oxide Semiconductor) technology, etc.

[0162] It should be noted that the specific implementation and function of the first amplifying transistor and the first transformer in this embodiment are the same as those in the above embodiment, and will not be repeated here.

[0163] This embodiment integrates the first amplifying transistor and the first transformer on the first chip, which, on the one hand, facilitates the connection between the first amplifying transistor and the first transformer, and can also improve the overall performance of the RF front-end module (for example, quality factor (Q value), efficiency, etc.), and adapt to the performance requirements of the RF front-end module for RF signals in higher frequency bands.

[0164] This embodiment also provides a radio frequency front-end module, as shown in FIG17 below, including a substrate, a first transformer, and a first chip arranged on the substrate, wherein the first chip includes a first amplifier transistor; the first transformer includes a first winding and a second winding coupled to each other, the first end of the first winding is connected to the first amplifier transistor, and the second end of the first winding is configured to be connected to a ground terminal or a power supply terminal; the first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, and the main line and the secondary line are connected between the first end of the second winding and the second end of the second winding. They are arranged to follow each other; a part of the main line segment of the main line is arranged on the first chip, and another part of the main line segment of the main line is arranged on the substrate, a part of the secondary line segment of the secondary line is arranged on the first chip, and another part of the secondary line segment of the secondary line is arranged on the substrate; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value is the distance between the first end of the second winding and the second end of the second winding.

[0165] Among them, the first chip can be manufactured based on GaAs (gallium arsenide) technology, and can also be manufactured based on CMOS (Complementary Metal Oxide Semiconductor) technology, etc.

[0166] It should be noted that the specific implementation and function of the first amplifying transistor and the first transformer in this embodiment are the same as those in the above embodiment, and will not be repeated here.

[0167] This embodiment arranges a portion of the main line segments of the main line on the first chip, another portion of the main line segments of the main line on the substrate, a portion of the secondary line segments of the secondary line on the first chip, and another portion of the secondary line segments of the secondary line on the substrate, thereby not only improving the overall performance of the RF front-end module (for example, quality factor (Q value), efficiency, etc.), and adapting to the performance requirements of the RF front-end module for higher frequency RF signals, but also realizing flexible setting of the first transformer layout to further reduce loss and occupied area.

[0168] In at least one embodiment, the RF front-end module is capable of supporting modules of the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like. Among them, the 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, the 5G NR (New Radio). The RF front-end module in this embodiment is a module that can support carrier aggregation (Carrier Aggregation) and dual connectivity (Dual Connectivity). Carrier aggregation and dual connectivity refer to communications using radio waves of multiple frequency bands at the same time. For example: the RF front-end module can simultaneously support communications of signals of the frequency band specified by 4G and communications of signals of another frequency band specified by 4G, or the RF front-end module can simultaneously support communications of signals of the frequency band specified by 4G and communications of signals of another frequency band specified by 5G.

[0169] A radio frequency front-end module includes a substrate 200, a first amplifying unit 10, a second amplifying unit 20, a first transformer 11 and a first output matching circuit 21 arranged on the substrate 200; the output end of the first amplifying unit 10 is connected to the first transformer 11, and the output end of the second amplifying unit 20 is connected to the first output matching circuit 21.

[0170] The first transformer 11 includes a first winding 111 and a second winding 112 coupled to each other. The first winding includes a first main line connected between a first end of the first winding and a second end of the first winding. The second winding includes a first secondary line connected between a first end of the second winding and a second end of the second winding. The first main line and the first secondary line are arranged to follow each other. The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

[0171] In at least one embodiment, as shown in FIG18 , the first amplifying unit 10 and the second amplifying unit 20 can be integrated on the same chip (for example, the first RF chip 100), and the first RF chip 100 is provided on a substrate. As shown in FIG20 , the first amplifying unit 10 and the second amplifying unit 20 can also be provided on two different chips respectively, for example, the first amplifying unit 10 is provided on the first RF chip 100, the second amplifying unit 20 is provided on the second RF chip 101, and the first RF chip 100 and the second RF chip 101 are provided on a substrate. In addition, the second amplifying unit 10 and the second amplifying unit 20 can also be provided directly on the substrate. Optionally, the first RF chip 100 and the second RF chip 101 can be manufactured based on a GaAs (gallium arsenide) process, or can be manufactured based on a CMOS (complementary metal oxide semiconductor) process, etc. This embodiment does not specifically limit the process manufacturing method of the first RF chip 100 and the second RF chip 101.

[0172] It can be understood that the first amplifying unit 10 and the second amplifying unit 20 can be any amplifying stage in the RF front-end module. For example, when the RF front-end module includes a driving stage amplifying unit and an output stage amplifying unit, the first amplifying unit 10 and the second amplifying unit 20 in this embodiment can be any amplifying stage (i.e., a driving stage or an output stage) in the RF front-end module.

[0173] In at least one embodiment, the first amplifying unit 10 may be an amplifying unit composed of at least one power amplifying transistor. For example, the power amplifying transistor may be any type of transistor, such as a bipolar junction transistor, a metal-oxide semiconductor field-effect transistor, or the like. The first amplifying unit 10 may be any type of amplifying unit, such as a single-ended amplifying unit, a differential amplifying unit, a Doherty power amplifying unit, or a balanced power amplifying unit. Similarly, the second amplifying unit 20 may be an amplifying unit composed of at least one power amplifying transistor. For example, the power amplifying transistor may be any type of transistor, such as a bipolar junction transistor, a metal-oxide semiconductor field-effect transistor, or the like. The second amplifying unit 20 may be any type of amplifying unit, such as a single-ended amplifying unit, a differential amplifying unit, a Doherty power amplifying unit, or a balanced power amplifying unit.

[0174] In at least one embodiment, the first amplifying unit 10 and the second amplifying unit 20 are circuits for amplifying radio frequency signals of different frequency bands. This embodiment does not specifically limit the frequency band range of the radio frequency signals supported by the first amplifying unit and the frequency band range of the radio frequency signals supported by the second amplifying unit.

[0175] In at least one embodiment, the first transformer 11 can be connected to the output end of the RF amplification unit as an exemplary illustration. The first main line of the first winding 111 and the first secondary line of the second winding 112 are arranged to follow each other, that is, the extension direction of the first main line from the first end to the second end of the first winding 111 is the same as the extension direction of the first secondary line from the first end to the second end of the second winding 112. The extension direction can be an extension direction of any angle and shape. For example: if the first main line of the first winding 111 is arranged in a straight line, the first secondary line of the second winding 112 is also arranged in a straight line. Alternatively, if the first main line of the first winding 111 is arranged in an L shape, the first secondary line of the second winding 112 is also arranged in an L shape. Alternatively, if the first main line of the first winding 111 is arranged in an arc shape, the first secondary line of the second winding 112 is also arranged in an arc shape. It should be noted that this embodiment does not specifically limit the shapes of the first main wire of the first winding 11 and the first secondary wire of the second winding 12. It only requires that the first main wire and the first secondary wire are arranged to follow each other.

[0176] In at least one embodiment, the distance between the first end of the first winding 111 and the first end of the second winding 112 is less than a first value, which is the distance between the first end of the first winding 111 and the second end of the first winding 111, and the distance between the second end of the first winding 111 and the second end of the second winding 112 is less than a second value, which is the distance between the first end of the second winding 112 and the second end of the second winding 112.

[0177] The first value is the straight-line distance between the first end of the first winding 111 and the second end of the first winding 111, and the second value is the straight-line distance between the first end of the second winding 112 and the second end of the second winding 112. As an example, when the first main line of the first winding 111 is arranged in a straight line, the distance between the first end of the first winding 111 and the second end of the first winding 111 is equal to the length of the first main line. Similarly, when the secondary line of the second winding 112 is arranged in a first straight line, the distance between the first end of the second winding 112 and the second end of the second winding 112 is equal to the length of the first secondary line.

[0178] In at least one embodiment, because the first main line and the secondary line are arranged in a sequential manner, the first end of the first winding is adjacent to the first end of the second winding, and the second end of the first winding is adjacent to the second end of the second winding. Specifically, in this embodiment, the distance between the first end of the first winding and the first end of the second winding is smaller than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is smaller than the distance between the first end of the second winding and the second end of the second winding. While ensuring the degree of coupling between the first main line of the first winding and the first secondary line of the second winding, this embodiment allows for flexible positioning of the two ports of the first winding and the two ports of the second winding. Furthermore, because the radii of the first and second windings in this implementation are infinite, the Q factor (quality factor) of the first transformer can be improved. Furthermore, because the first main line and the first secondary line are arranged in a sequential manner, no additional jumpers are introduced, resulting in reduced losses and a smaller footprint.

[0179] In at least one embodiment, the first output matching circuit may be a matching circuit composed of at least one capacitor and at least one inductor connected in series and / or in parallel, or may be any conventional type of transformer. This embodiment does not impose any limitation on the specific structure of the first output matching circuit.

[0180] In at least one embodiment, the first amplifying unit 10 includes a first amplifying transistor, the first end of the first winding is connected to the first amplifying transistor, and the second end of the first winding is configured to be connected to the ground end or the power supply end. As an example, the second end of the first winding is configured to be connected to the ground end, and other passive components (for example, capacitor components) can be connected to the path between the first amplifying transistor and the second end of the first winding to participate in impedance matching together with the first transformer, which can improve the flexibility of the impedance transformation of the first amplifying unit 10. As another example, the second end of the first winding is configured to be connected to the power supply end, and the power supply voltage of the power supply end is transmitted to the first amplifying transistor through the first winding to power the first amplifying transistor and ensure the normal operation of the first amplifying transistor. By utilizing the first winding to transmit the power supply voltage of the power supply end to the first amplifying transistor, without the need for additional power supply inductance connected to the power supply end, components can be reduced, thereby reducing the total occupied area.

[0181] In this embodiment, the RF front-end module includes a substrate, a first amplifying unit, a second amplifying unit, a first transformer and a first output matching circuit; the first amplifying unit, the second amplifying unit, the first transformer and the first output matching circuit are arranged on the substrate; the output end of the first amplifying unit is connected to the first transformer, and the output end of the second amplifying unit is connected to the first output matching circuit; wherein the first transformer includes a first winding and a second winding coupled to each other, the first winding includes a first main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a first secondary line connected between the first end of the second winding and the second end of the second winding, the first main line and the first secondary line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value is the distance between the first end of the second winding and the second end of the second winding; by improving the specific structure of the first transformer, not only the occupied area of ​​the first transformer can be reduced, but also the flexibility of the layout of the first transformer on the substrate can be improved, thereby ensuring the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0182] In a specific embodiment, the RF front-end module also includes a first post-stage circuit 401 and a second post-stage circuit 402; the output end of the first transformer 11 is connected to the first post-stage circuit 401, and the output end of the first output matching circuit 21 is connected to the second post-stage circuit 402; the first winding and the second winding are arranged between the output end of the first amplifying unit 10 and the first post-stage circuit 401; the first output matching circuit 21 is arranged between the output end of the second amplifying unit 20 and the second post-stage circuit 402.

[0183] In at least one embodiment, as shown in FIG19 , the first back-stage circuit 401 and the second back-stage circuit 402 can be integrated on the same chip (e.g., the first back-stage chip 40), and the first back-stage chip 40 is disposed on the substrate 200. As shown in FIG18 , the first back-stage circuit 401 and the second back-stage circuit 402 can also be directly disposed on the substrate. The first back-stage circuit 401 and the second back-stage circuit 402 can also be disposed on two different chips.

[0184] In at least one embodiment, the first post-stage circuit 401 and the second post-stage circuit 402 can be circuits composed of at least one switching unit, a filter, or other passive components. The output of the first transformer 11 can be directly or indirectly connected to the first post-stage circuit 401, and the output of the first output matching circuit 21 can be directly or indirectly connected to the second post-stage circuit 402. For example, the output of the first transformer 11 is connected to the first post-stage circuit 401 via other passive components, and the output of the first output matching circuit 21 is connected to the second post-stage circuit 402 via other passive components.

[0185] In this embodiment, the RF front-end module also includes a first post-stage circuit and a second post-stage circuit; the output end of the first transformer is connected to the first post-stage circuit, and the output end of the first output matching circuit is connected to the second post-stage circuit; the first winding and the second winding are arranged between the output end of the first amplifying unit and the first post-stage circuit; the first output matching circuit is arranged between the output end of the second amplifying unit and the second post-stage circuit; by arranging the first winding and the second winding between the output end of the first amplifying unit and the first post-stage circuit, and arranging the first output matching circuit between the output end of the second amplifying unit and the second post-stage circuit, the signal transmission path of the RF front-end module can be optimized, the redundancy and cumbersomeness of signal routing can be reduced, and unnecessary losses caused by excessive routing can be avoided, so as to meet the performance and area requirements of the RF front-end module.

[0186] In a specific embodiment, the RF front-end module further includes a first back-end chip 40 disposed on the substrate, and the first back-end circuit 401 and the second back-end circuit 402 are integrated on the first back-end chip. As shown in FIG19 , by integrating the first back-end circuit 401 and the second back-end circuit 402 on the first back-end chip 40, the circuit integration level can be improved.

[0187] In at least one embodiment, the first end of the second winding 112 is grounded, the second end of the second winding 112 is connected to the first post-stage circuit 401 through the first input end of the first post-stage chip 40, and the second end of the second winding 112 is arranged adjacent to the first input end of the first post-stage chip 40; the output end of the first output matching circuit 21 is connected to the second post-stage circuit 402 through the second input end of the first post-stage chip 40; the output end of the first output matching circuit 21 is arranged adjacent to the second input end of the first post-stage chip.

[0188] In at least one embodiment, the first input end of the first subsequent-stage chip 40 may be implemented through a first pad, and the second input end of the first subsequent-stage chip 40 may be implemented through a second pad.

[0189] As shown in FIG20 , in at least one embodiment, the first subsequent-stage chip 40 may be a chip integrated with at least one switching device, or may be a chip integrated with at least one filter circuit, etc. The first subsequent-stage chip may be a chip implemented using any manufacturing process in the prior art. As an example, the first subsequent-stage chip is an SOI (silicon on insulating substrate) chip, i.e., the first subsequent-stage chip is implemented using SOI (silicon on insulating substrate) manufacturing process technology.

[0190] In this embodiment, since the second end of the second winding 112 is connected to the first post-stage circuit 401 through the first input end of the first post-stage chip 40, and the output end of the first output matching circuit 21 is connected to the second post-stage circuit 402 through the second input end of the first post-stage chip 40; therefore, by arranging the second end of the second winding 112 adjacent to the first input end of the first post-stage chip 40; and arranging the output end of the first output matching circuit 21 adjacent to the second input end of the first post-stage chip, the signal transmission path of the RF front-end module can be further optimized, and the wiring length when the second end of the second winding 112 and the first post-stage circuit 401 are connected can be reduced, as well as the wiring length when the output end of the first output matching circuit 21 and the second post-stage circuit 402 are connected can be reduced, thereby avoiding redundancy and cumbersomeness of signal routing.

[0191] In a specific embodiment, the distance between the second end of the second winding and the first input end of the first subsequent-stage chip is smaller than the distance between the second end of the second winding and the second input end of the first subsequent-stage chip; the distance between the output end of the first output matching circuit and the second input end of the first subsequent-stage chip is smaller than the distance between the output end of the first output matching circuit and the first input end of the first subsequent-stage chip.

[0192] It can be understood that the distance between the second end of the second winding and the first input end of the first subsequent-stage chip is the straight-line distance between the second end of the second winding and the first input end of the first subsequent-stage chip, and the distance between the second end of the second winding and the second input end of the first subsequent-stage chip is the straight-line distance between the second end of the second winding and the second input end of the first subsequent-stage chip. Similarly, the distance between the output end of the first output matching circuit and the second input end of the first subsequent-stage chip is the straight-line distance between the output end of the first output matching circuit and the second input end of the first subsequent-stage chip, and the distance between the output end of the first output matching circuit and the first input end of the first subsequent-stage chip is the straight-line distance between the output end of the first output matching circuit and the first input end of the first subsequent-stage chip.

[0193] In this embodiment, by limiting the distance between the second end of the second winding and the first input end of the first subsequent-stage chip to be smaller than the distance between the second end of the second winding and the second input end of the first subsequent-stage chip, the distance between the output end of the first output matching circuit and the second input end of the first subsequent-stage chip is smaller than the distance between the output end of the first output matching circuit and the first input end of the first subsequent-stage chip, thereby reducing the wiring length when the second end of the second winding and the first input end of the first subsequent-stage chip are connected, and reducing the wiring length when the output end of the first output matching circuit and the second input end of the first subsequent-stage chip are connected, thereby better ensuring the overall integration of the RF front-end module.

[0194] In a specific embodiment, the extension direction of the first virtual straight line where the output end of the first amplifying unit is located is the same as the extension direction of the second virtual straight line where the first input end of the first post-stage chip is located, and the extension direction of the first main line from the first end to the second end of the first winding is the same as the extension direction of the first virtual straight line, and the extension direction of the first secondary line from the first end to the second end of the second winding is the same as the extension direction of the second virtual straight line.

[0195] In at least one embodiment, when the extension direction of the first virtual straight line where the output end of the first amplifying unit is located is the same as the extension direction of the second virtual straight line where the first input end of the first post-stage chip is located, by making the extension direction of the first main line from the first end to the second end of the first winding the same as the extension direction of the first virtual straight line, and the extension direction of the first secondary line from the first end to the second end of the second winding the same as the extension direction of the second virtual straight line, the extension directions of the first main line and the first secondary line are made the same, for example: the first main line and the first secondary line are arranged in a straight line, thereby reducing the occupied area of ​​the first transformer on the substrate and improving the flexibility of the layout of the first transformer.

[0196] It should be noted that the extension direction of the virtual straight line in this embodiment can be a horizontal extension direction, a vertical extension direction, or an extension direction at any other angle. This embodiment does not specifically limit the extension direction of the virtual straight line.

[0197] In a specific embodiment, referring to Figure 22 below, the RF front-end module also includes a first RF chip 100 arranged on the substrate 200, the first amplifying unit 10 and the second amplifying unit 20 are both integrated on the first RF chip 100, the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the second side of the first RF chip, and the second side of the first RF chip is arranged along the first direction; the first input end and the second input end of the first subsequent-stage chip are both arranged on the first side of the first subsequent-stage chip, and the first side of the first subsequent-stage chip is arranged along the first direction; wherein, the first side of the first subsequent-stage chip is arranged adjacent to the second side of the first RF chip.

[0198] The first RF chip may be manufactured based on a GaAs (gallium arsenide) process or a CMOS (complementary metal oxide semiconductor) process. This embodiment does not specifically limit the manufacturing process of the first RF chip 100 .

[0199] Optionally, the first direction is a vertical direction, and the second direction is a horizontal direction, or the first direction is a horizontal direction, and the second direction is a vertical direction. The second direction intersects with the first direction. For example, the horizontal direction may be the length direction of the substrate, and the vertical direction may be the width direction of the substrate. It should be noted that the horizontal direction and the vertical direction in this embodiment include but are not limited to being perpendicular to each other, that is, the angle at which the first direction and the second direction intersect is not limited to 90 degrees. For example: the angle at which the first direction and the second direction intersect can also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first direction and the second direction intersect. The angle at which the first direction and the second direction intersect can be the angle formed by directly connecting the two connected connecting segments, or it can be the arc angle formed by connecting through a small arc.

[0200] As a specific embodiment, this embodiment is exemplified by taking the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction.

[0201] Referring to FIG. 22 below, the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the second side of the first RF chip, for example, the second side of the first RF chip is the right side of the first RF chip in the vertical direction. The first input end and the second input end of the first subsequent-stage chip are both arranged on the first side of the first subsequent-stage chip, for example, the first side of the first subsequent-stage chip is the left side of the first subsequent-stage chip in the vertical direction. The first side of the first subsequent-stage chip and the second side of the first RF chip are adjacent to each other, thereby ensuring the integration of the RF front-end module while optimizing the layout and routing of the first winding and the second winding on the substrate.

[0202] It should be noted that this embodiment does not specifically limit the relative positions of the first RF chip and the first subsequent-stage chip on the substrate. The first subsequent-stage chip can be located in any area above, below, or directly to the right of the first RF chip. It is understood that the right and right sides mentioned in this embodiment are relative to the right and right sides of the first RF chip.

[0203] In a specific embodiment, referring to FIG. 18 to FIG. 21 below, the first amplifying unit is configured to support the transmission of radio frequency signals in the [1700 MHz, 7000 MHz] frequency band; the first main line and the first secondary line are both arranged in a straight line.

[0204] In at least one embodiment, when the amplification unit is configured to support the transmission of RF signals in a higher frequency band, the inductance of the first main line and the inductance of the first secondary line can be smaller. In this embodiment, when the output end of the first amplification unit 10 and the output end of the second amplification unit 20 are both arranged on the same side (second side) of the first RF chip 100, and the first input end and the second input end of the first subsequent chip 40 are also arranged on the same side (first side) of the first subsequent chip 40, and the second side of the first RF chip 100 is arranged adjacent to the first side of the first subsequent chip 40, when the first amplification unit is configured to support the transmission of RF signals in the [1700MHz, 7000MHz] frequency band; the first main line and the first secondary line are both arranged in a straight line. When the first main line and the first secondary line are arranged in a straight line, the area occupied on the substrate is smaller and the layout flexibility is greater; thereby, while ensuring the signal transmission quality, the overall integration of the RF front-end module is better guaranteed.

[0205] It is understandable that the larger the frequency band of the RF signal supported by the first amplifying unit for transmission, the smaller the inductance required for the first main line and the first secondary line. The smaller the frequency band of the RF signal supported by the first amplifying unit for transmission, the larger the inductance required for the first main line and the first secondary line.

[0206] In a specific embodiment, as shown in FIG23 below, the first amplifying unit is configured to support the transmission of radio frequency signals in the [600MHz, 2000MHz] frequency band. The first winding 111 includes a first connecting segment, a second connecting segment, and a third connecting segment connected in series, and the angle between two adjacent connecting segments is a first angle. Preferably, the first angle is greater than or equal to 90°, so as to avoid the occurrence of a pointed antenna effect and avoid discontinuity of the signal at the corner. The first angle can be the angle formed by directly connecting two adjacent connecting segments, or it can be the arc angle formed by connecting through a small arc. For example: the angle between the first connecting segment and the second connecting segment is any angle such as 90°, 120°, 135° or 150°, and the angle between the second connecting segment and the third connecting segment is any angle such as 90°, 120°, 135° or 150°.

[0207] The second winding 112 includes a fourth connecting segment, a fifth connecting segment, and a sixth connecting segment connected in series; the angle between two adjacent connecting segments is a second angle. Preferably, the second angle is greater than or equal to 90°, so as to avoid the occurrence of a pointed antenna effect and avoid discontinuity of the signal at the corner. The second angle can be an angle formed by directly connecting two adjacent connecting segments, or it can be an arc angle formed by connecting through a small arc. For example, the angle between the fourth connecting segment and the fifth connecting segment is any angle such as 90°, 120°, 135°, or 150°, and the angle between the fifth connecting segment and the sixth connecting segment is any angle such as 90°, 120°, 135°, or 150°.

[0208] In this embodiment, when the first amplifying unit is configured to support the transmission of RF signals in the [600MHz, 2000MHz] frequency band, the first winding 111 includes a first connecting segment, a second connecting segment, and a third connecting segment connected in series, and the angle between two adjacent connecting segments is a first angle; the second winding 112 includes a fourth connecting segment, a fifth connecting segment, and a sixth connecting segment connected in series; the angle between two adjacent connecting segments is a second angle; thereby not only improving the area utilization of the first transformer, but also increasing the inductance of the first winding and the second winding within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0209] In at least one embodiment, the first winding includes two first primary wires connected in parallel, and the second winding includes a first secondary wire, and the first secondary wire is arranged between the two first secondary wires. Alternatively, the second winding includes two first secondary wires connected in parallel, and the first winding includes a first primary wire, and the first primary wire is arranged between the two first secondary wires.

[0210] Referring to Figure 6 below, by dividing the first winding into two first main lines connected in parallel and setting the first secondary line between the two first main lines, it is possible to flexibly adjust the turns ratio between the first winding and the second winding while ensuring the coupling degree between the first winding and the second winding.

[0211] It can be understood that the first winding includes but is not limited to two first primary wires connected in parallel, and the second winding includes but is not limited to one first secondary wire; the first winding may also include three first primary wires and four first primary wires, etc. The second winding may also include two first secondary wires and three first secondary wires, etc. The more primary wires connected in parallel included in the first winding, the smaller the equivalent inductance of the first winding. The more secondary wires connected in parallel included in the second winding, the smaller the equivalent inductance of the second winding. The number of first primary wires connected in parallel included in the first winding and the number of first secondary wires connected in parallel included in the second winding can be set according to actual conditions. In this embodiment, in order to ensure the coupling between the first winding and the second winding, the first primary wires connected in parallel included in the first winding and the first secondary wires connected in parallel included in the second winding are arranged with an interval between them.

[0212] In a specific embodiment, the first main line and the first secondary line are coupled in the same layer, or the first main line and the first secondary line are coupled in upper and lower layers.

[0213] In a specific embodiment, referring to FIG23 below, the first connecting segment extends along a horizontal direction away from the first RF chip, the second connecting segment extends along a vertical direction, and the third connecting segment extends along a horizontal direction away from the first RF chip. That is, the angle between two adjacent connecting segments among the first, second, and third connecting segments is 90 degrees; the first winding is arranged in a Z-shape. The fourth connecting segment extends along a horizontal direction away from the first RF chip, the fifth connecting segment extends along a vertical direction, and the sixth connecting segment extends along a horizontal direction away from the first RF chip. That is, the angle between two adjacent connecting segments among the fourth, fifth, and sixth connecting segments is 90 degrees, and the second winding can be arranged in a Z-shape.

[0214] In this embodiment, when the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the same side (the second side) of the first RF chip 100, and the first input end and the second input end of the first subsequent-stage chip 40 are also arranged on the same side (the first side) of the first subsequent-stage chip 40, and the second side of the first RF chip 100 is arranged adjacent to the first side of the first subsequent-stage chip 40, by making the first connecting segment extend along the horizontal direction away from the first RF chip, the second connecting segment extend along the vertical direction, and the third connecting segment extend along the horizontal direction away from the first RF chip; the fourth connecting segment extends along the horizontal direction away from the first RF chip, the fifth connecting segment extends along the vertical direction, and the sixth connecting segment extends along the horizontal direction away from the first RF chip; this not only avoids signal discontinuity at the corner and improves the area utilization of the first transformer, but also increases the inductance of the first winding and the second winding within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0215] In a specific embodiment, referring to Figure 22 below, the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the second side of the first RF chip 100, and the second side of the first RF chip 100 is arranged along the first direction; the first input end of the first subsequent-stage chip 40 is arranged on the third side of the first subsequent-stage chip 40, and the third side of the first subsequent-stage chip 40 is arranged along the second direction, the second input end of the first subsequent-stage chip 40 is arranged on the first side of the first subsequent-stage chip 40, and the first side of the first subsequent-stage chip 40 is arranged along the first direction; wherein, the first side of the first subsequent-stage chip 40 is arranged adjacent to the second side of the first RF chip 100, and the first direction and the second direction intersect.

[0216] As a specific embodiment, this embodiment is illustratively described by taking the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. The output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the same side of the first RF chip 100, and the first input end of the first subsequent-stage chip 40 and the second input end of the first subsequent-stage chip 40 are respectively arranged on different sides of the first subsequent-stage chip 40. As an example, the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the second side (e.g., the right side) of the width direction of the first RF chip 100. The first input end of the first post-stage chip 40 is set on the third side (for example, the upper side) in the length direction of the first post-stage chip 40, and the second input end of the first post-stage chip 40 is set on the first side (for example, the left side) in the width direction of the first post-stage chip 40; thereby not only reducing the mutual interference between the RF signals of different frequency bands input to the first input end and the second input end of the first post-stage chip 40, but also optimizing the routing layout when the first transformer is connected to the first post-stage chip 40 while ensuring the integration of the RF front-end module.

[0217] In a specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; the first secondary line includes a first connection section and a second connection section connected in series, the first connection section extends from the first end of the second winding along the second direction, and the second connection section extends along the first direction to the second end of the second winding.

[0218] Wherein, the first direction is a vertical direction, and the second direction is a horizontal direction, or the first direction is a horizontal direction, and the second direction is a vertical direction. Wherein, the second direction intersects with the first direction. For example, the horizontal direction may be the length direction of the substrate, and the vertical direction may be the width direction of the substrate. It should be noted that, in this embodiment, the horizontal direction and the vertical direction include but are not limited to being perpendicular to each other, that is, the angle at which the first direction and the second direction intersect includes but is not limited to 90 degrees. For example: the angle at which the first direction and the second direction intersect may also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first direction and the second direction intersect. Wherein, the angle at which the first direction and the second direction intersect may be the angle formed by directly connecting the two connected connecting segments, or it may be the arc angle formed by connecting through a small arc segment.

[0219] As a specific embodiment, this embodiment is illustratively described using the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. The first main connecting section extends from the first end of the first winding along the second direction, and the second main connecting section extends along the first direction to the second end of the first winding, that is, the first main connecting section extends along the horizontal direction of the substrate, and the second main connecting section extends along the vertical direction of the substrate. The angle between the first main connecting section and the second main connecting section is 90 degrees, and the first winding is arranged in an L shape. The first connecting section extends from the first end of the second winding along the second direction, and the second connecting section extends along the first direction to the second end of the second winding, that is, the first connecting section extends along the horizontal direction of the substrate, and the second connecting section extends along the vertical direction of the substrate. The angle between the first connecting section and the second connecting section is 90 degrees, and the second winding is arranged in an L shape.

[0220] In this embodiment, the output end of the first amplifying unit 10 and the output end of the second amplifying unit 20 are both arranged on the second side (e.g., the right side) in the vertical direction of the first RF chip 100. The first input end of the first subsequent-stage chip 40 is arranged on the third side (e.g., the top side) in the horizontal direction of the first subsequent-stage chip 40, and the second input end of the first subsequent-stage chip 40 is arranged on the first side (e.g., the left side) in the vertical direction of the first subsequent-stage chip 40. By making the first main connecting section extend horizontally from the first end of the first winding, and the second main connecting section extend vertically to the second end of the first winding; and the first connecting section extend horizontally from the first end of the second winding, and the second connecting section extend vertically to the second end of the second winding, not only can the area utilization of the first transformer be improved, but also the inductance of the first winding and the second winding can be increased within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0221] In a specific embodiment, referring to FIG29 below, the output end of the first amplifying unit is arranged on the second side of the first RF chip, the output end of the second amplifying unit is arranged on the fourth side of the first RF chip, and the second side of the first RF chip is arranged along the first direction; the fourth side of the first RF chip is arranged along the second direction;

[0222] The first input end of the first subsequent-stage chip is arranged on a third side of the first subsequent-stage chip, and the third side of the first subsequent-stage chip is arranged along the second direction; the second input end of the first subsequent-stage chip is arranged on a first side of the first subsequent-stage chip, and the first side of the first subsequent-stage chip is arranged along the first direction;

[0223] The first direction and the second direction intersect.

[0224] The first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; the first secondary line includes a first connection section and a second connection section connected in series, the first connection section extends from the first end of the second winding along the second direction, and the second connection section extends along the first direction to the second end of the second winding.

[0225] In a specific embodiment, the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor.

[0226] In one embodiment, the first output matching circuit includes a first capacitor C1, a first inductor L1, and a second inductor L2. The first end of the first capacitor C1 is connected to the second amplifying unit and the output end, the second end of the first capacitor C1 is connected to the second input end of the first subsequent chip 40, the first end of the first inductor L1 is connected to the first end of the first capacitor C1, the second end of the first inductor L1 is grounded, the first end of the second inductor L2 is connected to the second end of the first capacitor C1, and the second end of the second inductor L2 is grounded. Preferably, the first capacitor C1, the first inductor L1, and the second inductor L2 can be provided on a substrate in the form of surface mount devices (SMDs).

[0227] In this embodiment, the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor, thereby achieving impedance matching of low-frequency RF signals in a limited area and more flexible impedance adjustment.

[0228] In at least one embodiment, the first amplifying unit is configured to support transmission of radio frequency signals in a first frequency band, and the second amplifying unit is configured to support transmission of radio frequency signals in a second frequency band, wherein the first frequency band is larger than the second frequency band. For example, the first frequency band ranges from [600 MHz to 2000 MHz], and the second frequency band ranges from (2000 MHz to 7000 MHz).

[0229] In at least one embodiment, when the first amplifying unit is configured to support the transmission of RF signals in a higher frequency band, the implementation of the first transformer in the above embodiment can not only ensure the transmission quality of the RF signal, but also achieve flexible configuration of the first transformer layout, further reducing losses and occupied area. When the second amplifying unit is configured to support the transmission of RF signals in a lower frequency band, the implementation of the first output matching circuit in the above embodiment can achieve flexible impedance adjustment within a limited area.

[0230] In a specific embodiment, the RF front-end module also includes a third amplifying unit 30 and a second transformer 31 arranged on the substrate, the third amplifying unit 30, the first amplifying unit 10 and the second amplifying unit 20 are arranged in sequence along the first direction, and the second transformer 31, the first transformer 11 and the first output matching circuit 21 are arranged in sequence along the first direction.

[0231] In at least one embodiment, the third amplifying unit 30 may be integrated with the first amplifying unit 10 and the second amplifying unit 20 on the same chip, or may be single-ended and arranged on one chip, or may be integrated on one chip with the first amplifying unit 10 or the second amplifying unit 20. For example: the third amplifying unit 30, the second amplifying unit 20, and the first amplifying unit 10 are all integrated on the first RF chip, or the third amplifying unit 30 is integrated on the third RF chip, the second amplifying unit 20 is integrated on the second RF chip, and the first amplifying unit 10 is integrated on the first RF chip; or the third amplifying unit 30 and the second amplifying unit 10 are integrated on the second RF chip, and the first amplifying unit is integrated on the first RF chip; or the first amplifying unit and the second amplifying unit are integrated on the first RF chip, and the third amplifying unit 30 is integrated alone on the second RF chip, etc.

[0232] As a specific embodiment, this embodiment is described illustratively using the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. Specifically, the third amplifying unit, the second amplifying unit, and the first amplifying unit are sequentially spaced along the width direction of the substrate, and the second transformer, the first transformer, and the first output matching circuit are sequentially spaced along the width direction of the substrate. This improves integration while optimizing the signal transmission path of the RF front-end module, reducing redundancy and complexity in signal routing, and thereby avoiding unnecessary losses due to excessive routing, thereby meeting the performance and area requirements of the RF front-end module.

[0233] The output end of the third amplifying unit 30 is connected to the second transformer 31, wherein the second transformer includes a third winding and a fourth winding coupled to each other, the third winding includes a second main line connected between the first end of the third winding and the second end of the first winding; the fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding, and the second main line and the second secondary line are arranged to follow each other; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, the third value is the distance between the first end of the third winding and the second end of the fourth winding, and the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, the fourth value is the distance between the first end of the four windings and the second end of the fourth winding.

[0234] In this embodiment, the second transformer 31 includes a third winding 311 and a fourth winding 312 coupled to each other. The second main wire of the third winding 311 and the second secondary wire of the fourth winding 312 are arranged in a mutually following arrangement. Specifically, the direction in which the second main wire extends from the first end to the second end of the third winding is the same as the direction in which the second secondary wire extends from the first end to the second end of the fourth winding. The extension direction can be any angle or shape. For example, if the second main wire of the third winding is arranged in a straight line, the second secondary wire of the fourth winding is also arranged in a straight line. Alternatively, if the second main wire of the third winding is arranged in an L-shape, the second secondary wire of the fourth winding is also arranged in an L-shape. Alternatively, if the second main wire of the third winding is arranged in an arc shape, the second secondary wire of the fourth winding is also arranged in an arc shape. It should be noted that this embodiment does not impose any specific restrictions on the shapes of the second main wire and the second secondary wire; it is sufficient that the first main wire and the first secondary wire are arranged in a mutually following arrangement.

[0235] The distance between the first end of the third winding 311 and the first end of the fourth winding 312 is less than a third value, which is the distance between the first end of the third winding and the second end of the fourth winding. The distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, which is the distance between the first end of the fourth winding and the second end of the fourth winding. The third value is the straight-line distance between the first end of the third winding and the second end of the third winding, and the fourth value is the straight-line distance between the first end of the fourth winding and the second end of the fourth winding.

[0236] In this embodiment, the positions of the two ports of the third winding and the two ports of the fourth winding can be flexibly set under the premise of ensuring the coupling degree between the second main line of the third winding and the second secondary line of the fourth winding. Since the radius of the third winding and the fourth winding in this implementation is infinite, the Q value (quality factor) of the second transformer can be improved. In addition, since the second main line and the second secondary line are arranged to follow each other without introducing additional jumpers, the loss is also small and the occupied area is also small.

[0237] It should be noted that the specific implementation of the second transformer in this embodiment is similar to that of the first transformer in the above embodiment and is not described in detail here. The specific implementation of the third amplifying unit 30 in this embodiment is similar to that of the second amplifying unit 20 in the above embodiment and is not described in detail here.

[0238] In at least one embodiment, the third amplifying unit, the first amplifying unit 10, and the second amplifying unit 20 are circuits for amplifying radio frequency signals of different frequency bands. This embodiment does not specifically limit the frequency band range of the radio frequency signals supported by the third amplifying unit, the frequency band range of the radio frequency signals supported by the second amplifying unit, and the frequency band range of the radio frequency signals supported by the first amplifying unit.

[0239] In this embodiment, when the first amplifying unit, the second amplifying unit, the third amplifying unit, the first transformer, the second transformer and the first output matching circuit are all integrated on the substrate, by adopting the implementation method of the first transformer and the second transformer in the above embodiment, and allowing the third amplifying unit, the second amplifying unit and the first amplifying unit to be arranged in sequence along the first direction, and the second transformer, the first transformer and the first output matching circuit to be arranged in sequence along the first direction, not only can the integration of the RF front-end module be improved, but also the signal transmission path of the RF front-end module can be optimized, the redundancy and cumbersomeness of the signal routing can be reduced, and the layout of each amplifying unit and component can be more compact and reasonable.

[0240] In a specific embodiment, the first amplifying unit 10 is configured to support transmission of RF signals in a first frequency band; the first main line and the first secondary line are arranged in an L-shape; the second amplifying unit is configured to support transmission of RF signals in a second frequency band; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor; the third amplifying unit is configured to support transmission of RF signals in a third frequency band; the second main line and the second secondary line are arranged in a straight line. The third frequency band is greater than the first frequency band, and the first frequency band is greater than the second frequency band.

[0241] In at least one embodiment, the larger the frequency band of the RF signal supported by the amplifying unit, the smaller the inductance required for the winding of the transformer. The smaller the frequency band of the RF signal supported by the amplifying unit, the larger the inductance required for the winding of the transformer. Therefore, in this embodiment, the third amplifying unit is configured to support the third frequency band of the RF signal with the largest frequency, the first amplifying unit is configured to support the first frequency band of the RF signal with the second largest frequency, and the second amplifying unit is configured to support the second frequency band of the RF signal with the smallest frequency. Therefore, by making the second transformer connected to the third amplifying unit in a straight line, the first transformer connected to the first amplifying unit in an L-shaped arrangement, and the first output matching circuit connected to the second amplifying unit using a series and / or parallel combination of one less capacitor and at least one inductor, the integration of the RF front-end module can be further improved, the space utilization rate can be improved, and the layout of each amplifying unit and components can be more compact and reasonable.

[0242] In one specific embodiment, the first amplifying unit is configured to support transmission of RF signals in a third frequency band; the first main line and the first secondary line are arranged in a straight line; the second amplifying unit is configured to support transmission of RF signals in a second frequency band; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor. The third amplifying unit is configured to support transmission of RF signals in the first frequency band; the second main line and the second secondary line are arranged in an L-shape; the third frequency band is greater than the first frequency band, and the first frequency band is greater than the second frequency band.

[0243] In this embodiment, the first amplifying unit is configured to support the third frequency band of the RF signal at the largest value, the third amplifying unit is configured to support the first frequency band of the RF signal at the second largest value, and the second amplifying unit is configured to support the second frequency band of the RF signal at the smallest value. Therefore, by making the second transformer connected to the first amplifying unit in a straight line, the first transformer connected to the third amplifying unit in an L-shape, and the first output matching circuit connected to the second amplifying unit adopting a series and / or parallel combination of one less capacitor and at least one inductor, the integration of the RF front-end module can be further improved, the space utilization rate can be improved, and the layout of each amplifying unit and components can be more compact and reasonable.

[0244] In a specific embodiment, the first amplifying unit is configured to support the transmission of RF signals of [1500MHz, 3000MHz]; the first main line and the first secondary line are arranged in an L-shape; the second amplifying unit is configured to support the transmission of RF signals of [600MHz, 2000MHz]; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor; the third amplifying unit is configured to support the transmission of RF signals in the frequency band of [1700MHz, 7000MHz]; the second main line and the second secondary line are arranged in a straight line, thereby further improving the integration of the RF front-end module, improving space utilization, and making the layout of each amplifying unit and component more compact and reasonable.

[0245] In one specific embodiment, the first amplification unit is configured to support the transmission of RF signals in the frequency bands of [1700MHz, 7000MHz]; the first main line and the first secondary line are arranged in a straight line; the second amplification unit is configured to support the transmission of RF signals in the frequency bands of [600MHz, 2000MHz]; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor. The third amplification unit is configured to support the transmission of RF signals in the frequency bands of [1500MHz, 3000MHz]; the second main line and the second secondary line are arranged in an L-shape. This further improves the integration of the RF front-end module, enhances space utilization, and makes the layout of each amplification unit and component more compact and reasonable.

[0246] This embodiment also provides a radio frequency front-end module, including a substrate; a first amplifying unit 10, a third amplifying unit 30, a first transformer 11 and a second transformer 31 arranged on the substrate; the output end of the first amplifying unit 10 is connected to the first transformer 11, and the output end of the third amplifying unit 30 is connected to the second transformer 31.

[0247] The first transformer 11 includes a first winding 111 and a second winding 112 coupled to each other. The first winding includes a first main line connected between a first end of the first winding and a second end of the first winding. The second winding includes a first secondary line connected between a first end of the second winding and a second end of the second winding. The first main line and the first secondary line are arranged following each other. The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

[0248] In which, the second transformer 31 includes a third winding 311 and a third winding 312 coupled to each other, the third winding includes a second main line connected between the first end of the third winding and the second end of the first winding; the fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding, and the second main line and the second secondary line are arranged following each other; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, the third value is the distance between the first end of the third winding and the second end of the fourth winding, and the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, the fourth value is the distance between the first end of the fourth winding and the second end of the fourth winding.

[0249] The specific implementation of the first transformer 11 and the second transformer 31 in this embodiment is the same as the specific implementation of the first transformer in the above embodiment, and is not redundantly described here. The specific implementation of the first amplifying unit and the third amplifying unit in this embodiment is the same as the specific implementation of the first amplifying unit and the third amplifying unit in the above embodiment, and is not redundantly described here.

[0250] In at least one embodiment, the first amplifying unit 10 and the third amplifying unit 30 can be integrated on the same chip (e.g., a first RF chip), and the first RF chip is disposed on a substrate. The first amplifying unit 10 and the third amplifying unit 30 can also be disposed on two different chips, for example, the first amplifying unit 10 is disposed on the first RF chip, the third amplifying unit 30 is disposed on the second RF chip, and the first RF chip and the second RF chip are disposed on the substrate. In addition, the first amplifying unit 10 and the third amplifying unit 30 can also be disposed directly on the substrate.

[0251] In this embodiment, the RF front-end module includes a substrate, a first amplifying unit and a third amplifying unit arranged on the substrate, a first transformer and a second transformer; by improving the specific implementation method of the first transformer and the second transformer, not only the occupied area of ​​the first transformer and the second transformer can be reduced, but also the flexibility of the layout of the first transformer and the second transformer on the substrate can be improved, thereby ensuring the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0252] In a specific embodiment, the RF front-end module also includes a first post-stage circuit and a third post-stage circuit, the output end of the first transformer is connected to the first post-stage circuit, and the output end of the second transformer is connected to the third post-stage circuit; the first winding and the second winding are arranged between the output end of the first amplifying unit and the first post-stage circuit; the third winding and the fourth winding are arranged between the output end of the third amplifying unit and the third post-stage circuit.

[0253] In at least one embodiment, the first and third post-stage circuits may be integrated on the same chip (e.g., second post-stage chip 50), and the second post-stage chip 50 is disposed on a substrate. The first and third post-stage circuits may also be disposed directly on the substrate. The first and third post-stage circuits may also be disposed on two different chips.

[0254] In at least one embodiment, the first post-stage circuit and the third post-stage circuit can be circuits composed of at least one switching unit, or circuits composed of filters, or circuits composed of other passive components. The output end of the first transformer 11 can be directly or indirectly connected to the first post-stage circuit, and the output end of the second transformer can be directly or indirectly connected to the third post-stage circuit. For example, the output end of the first transformer 11 is connected to the first post-stage circuit via other passive components, and the output end of the second transformer is connected to the third post-stage circuit via other passive components.

[0255] In this embodiment, the RF front-end module further includes a first rear-stage circuit and a third rear-stage circuit;

[0256] The output end of the first transformer is connected to the first post-stage circuit, and the output end of the second transformer is connected to the third post-stage circuit; the first winding and the second winding are arranged between the output end of the first amplifying unit and the first post-stage circuit; the third winding and the fourth winding are arranged between the output end of the second amplifying unit and the third post-stage circuit; by arranging the first winding and the second winding between the output end of the first amplifying unit and the first post-stage circuit, and arranging the third winding and the fourth winding between the output end of the second amplifying unit and the third post-stage circuit, the signal transmission path of the RF front-end module can be optimized, the redundancy and cumbersomeness of signal routing can be reduced, and unnecessary losses caused by excessive routing can be avoided, so as to meet the performance and area requirements of the RF front-end module.

[0257] In a specific embodiment, the RF front-end module also includes a second post-stage chip 50, and the first post-stage circuit and the third post-stage circuit are integrated on the second post-stage chip 50; by integrating the first post-stage circuit and the third post-stage circuit on the second post-stage chip 50, the circuit integration can be improved.

[0258] In at least one embodiment, the first end of the second winding is grounded, and the second end of the second winding is connected to the first subsequent-stage circuit via the first input end of the second subsequent-stage chip; the first end of the fourth winding is grounded, and the second end of the fourth winding is connected to the third subsequent-stage circuit via the second input end of the second subsequent-stage circuit. The second end of the second winding is disposed adjacent to the first input end of the second subsequent-stage chip, and the second end of the fourth winding is disposed adjacent to the second input end of the second subsequent-stage chip.

[0259] In at least one embodiment, the second subsequent-stage chip may be a chip integrated with at least one switching device, or may be a chip integrated with at least one filter circuit, etc. The second subsequent-stage chip may be a chip implemented using any manufacturing process in the prior art. As an example, the second subsequent-stage chip is an SOI (silicon on insulating substrate) chip, i.e., the second subsequent-stage chip is implemented using SOI (silicon on insulating substrate) manufacturing technology.

[0260] In this embodiment, by arranging the second end of the second winding adjacent to the first input end of the second subsequent-stage chip; and arranging the second end of the fourth winding adjacent to the second input end of the second subsequent-stage chip, the signal transmission path of the RF front-end module can be further optimized, and the routing length when the second end of the second winding is connected to the first subsequent-stage circuit, as well as the routing length when the second end of the fourth winding is connected to the third subsequent-stage circuit, can be reduced, thereby avoiding redundancy and cumbersomeness of signal routing.

[0261] In at least one embodiment, the distance between the second end of the second winding and the first input end of the second subsequent-stage chip is smaller than the distance between the second end of the second winding and the second input end of the second subsequent-stage chip; the distance between the second end of the fourth winding and the second input end of the second subsequent-stage chip is smaller than the distance between the second end of the fourth winding and the first input end of the second subsequent-stage chip.

[0262] In this embodiment, by limiting the distance between the second end of the second winding and the first input end of the second subsequent-stage chip to be smaller than the distance between the second end of the second winding and the second input end of the second subsequent-stage chip, and the distance between the second end of the fourth winding and the second input end of the second subsequent-stage chip to be smaller than the distance between the second end of the fourth winding and the first input end of the second subsequent-stage chip, the wiring length when the second end of the second winding 112 and the first input end of the second subsequent-stage chip are connected is short, and the wiring length when the second end of the output end of the fourth winding and the second input end of the second subsequent-stage chip are connected is short, thereby better ensuring the overall integration of the RF front-end module.

[0263] In a specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the frequency band of [1500MHz, 3000MHz]; the first main line and the first secondary line are arranged in an L shape, and the third amplification unit is configured to support the transmission of radio frequency signals in the frequency band of [1700MHz, 7000MHz]; the second main line and the second secondary line are arranged in a straight line.

[0264] In at least one embodiment, when the frequency band of the RF signal supported by the amplifying unit is larger, the inductance required for the winding of the transformer is smaller. When the frequency band of the RF signal supported by the amplifying unit is smaller, the inductance required for the winding of the transformer is larger. This embodiment limits the first amplifying unit to be configured to support the transmission of RF signals in the frequency band of [1500MHz, 3000MHz]; the first main line and the first secondary line are arranged in an L shape, and the third amplifying unit is configured to support the transmission of RF signals in the frequency band of [1700MHz, 7000MHz]; the second main line and the second secondary line are arranged in a straight line, thereby further improving the integration of the RF front-end module and improving space utilization, so that the layout of the first amplifying unit, the third amplifying unit, the first transformer and the second transformer is more compact and reasonable.

[0265] In a specific embodiment, the output end of the first amplifying unit and the output end of the second amplifying unit are both arranged on the second side of the first RF chip, and the second side of the first RF chip is arranged along the first direction; the first input end of the first subsequent-stage chip is arranged on the third side of the first subsequent-stage chip, and the third side of the first subsequent-stage chip is arranged along the second direction, and the second input end of the first subsequent-stage chip is arranged on the first side of the first subsequent-stage chip, and the first side of the first subsequent-stage chip is arranged along the first direction; wherein, the first side of the first subsequent-stage chip is arranged adjacent to the second side of the first RF chip, and the first direction and the second direction intersect.

[0266] In a specific embodiment, the RF front-end module further includes a second RF chip disposed on the substrate, the first amplifying unit and the third amplifying unit are both integrated on the second RF chip, the output end of the first amplifying unit and the output end of the second amplifying unit are both disposed on a second side of the second RF chip, and the second side of the second RF chip is disposed along the first direction;

[0267] The first input end of the second subsequent-stage chip is arranged on the third side of the second subsequent-stage chip, and the third side of the second subsequent-stage chip is arranged along the second direction. The second input end of the second subsequent-stage chip is arranged on the first side of the second subsequent-stage chip, and the first side of the second subsequent-stage chip is arranged along the first direction; wherein, the first side of the second subsequent-stage chip is arranged adjacent to the second side of the second RF chip, and the first direction and the second direction intersect.

[0268] The second RF chip may be manufactured based on a GaAs (gallium arsenide) process or a CMOS (complementary metal oxide semiconductor) process. This embodiment does not specifically limit the manufacturing process of the second RF chip 100 .

[0269] Optionally, the first direction is a vertical direction, and the second direction is a horizontal direction, or the first direction is a horizontal direction, and the second direction is a vertical direction. The second direction intersects with the first direction. For example, the horizontal direction may be the length direction of the substrate, and the vertical direction may be the width direction of the substrate. It should be noted that the horizontal direction and the vertical direction in this embodiment include but are not limited to being perpendicular to each other, that is, the angle at which the first direction and the second direction intersect is not limited to 90 degrees. For example: the angle at which the first direction and the second direction intersect can also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first direction and the second direction intersect. The angle at which the first direction and the second direction intersect can be the angle formed by directly connecting the two connected connecting segments, or it can be the arc angle formed by connecting through a small arc.

[0270] As a specific embodiment, this embodiment is exemplified by taking the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. The output end of the first amplifying unit 10 and the output end of the third amplifying unit 0 are both arranged on the second side of the second RF chip, for example: the second side of the second RF chip is the right side of the second RF chip in the vertical direction. The first input end and the second input end of the second subsequent chip are both arranged on the first side of the second subsequent chip, for example: the first side of the second subsequent chip is the left side of the second subsequent chip in the vertical direction, and the first side of the second subsequent chip and the second side of the second RF chip are adjacent to each other, so that the layout and routing of the first winding and the second winding on the substrate, as well as the layout and routing of the third winding and the fourth winding on the substrate can be optimized while ensuring the integration of the RF front-end module.

[0271] It should be noted that this embodiment does not specifically limit the relative positions of the second RF chip and the second subsequent-stage chip on the substrate. The second subsequent-stage chip can be located in any area above, below, or directly to the right of the second RF chip. It is understood that the right and right sides mentioned in this embodiment are relative to the right and right sides of the second RF chip.

[0272] In a specific embodiment, the first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; the first secondary line includes a first connection section and a second connection section connected in series, the first connection section extends from the first end of the second winding along the second direction, and the second connection section extends along the first direction to the second end of the second winding; the second main line extends from the first end of the first winding along the second direction to the second end of the third winding; the second secondary line extends from the first end of the fourth winding along the second direction to the second end of the fourth winding.

[0273] As a specific embodiment, this embodiment is illustratively described using the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. The first main connecting section extends from the first end of the first winding along the second direction, and the second main connecting section extends along the first direction to the second end of the first winding, that is, the first main connecting section extends along the horizontal direction of the substrate, and the second main connecting section extends along the vertical direction of the substrate. The angle between the first main connecting section and the second main connecting section is 90 degrees, and the first winding is arranged in an L shape. The first connecting section extends from the first end of the second winding along the second direction, and the second connecting section extends along the first direction to the second end of the second winding, that is, the first connecting section extends along the horizontal direction of the substrate, and the second connecting section extends along the vertical direction of the substrate. The angle between the first connecting section and the second connecting section is 90 degrees, and the second winding is arranged in an L shape. The second main line extends from the first end of the first winding along the second direction to the second end of the third winding; that is, the second main line extends along the horizontal direction of the substrate, and the second secondary line extends from the first end of the fourth winding along the second direction to the second end of the fourth winding, that is, the second secondary line extends along the horizontal direction of the substrate, and the third winding and the fourth winding are arranged in a straight line.

[0274] In this embodiment, the first winding and the second winding of the first transformer are arranged in an L shape on the substrate, and the third winding and the fourth winding of the second transformer are arranged in a straight line on the substrate, so that the occupied area of ​​the first transformer and the second transformer can be reduced, while ensuring the integration of the RF front-end module and meeting the performance and area requirements of the RF front-end module.

[0275] In a specific embodiment, the output end of the first amplifying unit and the output end of the third amplifying unit are both arranged on the second side of the second RF chip, and the second side of the second RF chip is arranged along the first direction; the first input end of the second subsequent-stage chip is arranged on the third side of the second subsequent-stage chip, and the second input end of the second subsequent-stage chip is arranged on the fourth side of the second subsequent-stage chip, and the third side of the second subsequent-stage chip is arranged along the second direction, and the fourth side of the second subsequent-stage chip is arranged along the second direction, and the first direction and the second direction intersect.

[0276] As a specific embodiment, this embodiment is exemplified by taking the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction. The output end of the first amplifying unit and the output end of the third amplifying unit are both arranged on the second side of the second RF chip, for example: the second side of the second RF chip is the right side of the second RF chip in the vertical direction. The first input end of the second subsequent-stage chip is arranged on the third side of the second subsequent-stage chip, for example: the third side of the second subsequent-stage chip is the upper side of the second subsequent-stage chip in the horizontal direction; the second input end of the second subsequent-stage chip is arranged on the fourth side of the second subsequent-stage chip, for example: the fourth side of the second subsequent-stage chip is the lower side of the second subsequent-stage chip in the horizontal direction.

[0277] In this embodiment, the output end of the first amplifying unit and the output end of the third amplifying unit are both arranged on the second side of the second RF chip, and the second side of the second RF chip is arranged along the first direction; the first input end of the second subsequent-stage chip is arranged on the third side of the second subsequent-stage chip, and the second input end of the second subsequent-stage chip is arranged on the fourth side of the second subsequent-stage chip, and the third side of the second subsequent-stage chip is arranged along the second direction, and the fourth side of the second subsequent-stage chip is arranged along the second direction, and the first direction and the second direction intersect; thereby, the inductance of the first winding and the second winding, as well as the inductance of the third winding and the fourth winding can be increased within a limited area, thereby improving the overall performance of the RF power amplifier.

[0278] In a specific embodiment, the first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; the first secondary line includes a first connection section and a second connection section connected in series, the first connection section extends from the first end of the second winding along the second direction, and the second connection section extends along the first direction to the second end of the second winding; that is, the first winding and the second winding are arranged in an L shape.

[0279] The second main line includes a third main connection section and a fourth main connection section connected in series, the third main connection section extends from the first end of the third winding along the second direction, and the fourth main connection section extends along the first direction to the second end of the third winding; the second secondary line includes a third connection section and a fourth connection section connected in series, the third connection section extends from the first end of the fourth winding along the second direction, and the fourth connection section extends along the first direction to the second end of the fourth winding, that is, the third winding and the fourth winding are arranged in an L shape.

[0280] In this embodiment, by arranging the first winding and the second winding of the first transformer in an L-shape on the substrate, and arranging the third winding and the fourth winding of the second transformer in an L-shape on the substrate, the inductance of the first winding and the second winding, as well as the inductance of the third winding and the fourth winding can be increased within a limited area, thereby ensuring the integration of the RF front-end module and meeting the performance and area requirements of the RF front-end module.

[0281] In a specific embodiment, referring to Figures 28 and 29 below, the output end of the first amplifying unit is set on the second side of the second RF chip, the output end of the third amplifying unit is set on the fourth side of the second RF chip, and the second side of the second RF chip is set along the first direction; the fourth side of the second RF chip is set along the second direction; the first input end of the second subsequent-stage chip is set on the third side of the second subsequent-stage chip, and the third side of the second subsequent-stage chip is set along the second direction, the second input end of the second subsequent-stage chip is set on the first side of the second subsequent-stage chip, and the first side of the second subsequent-stage chip is set along the first direction; wherein, the first direction and the second direction intersect.

[0282] The first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; the first secondary line includes a first connection section and a second connection section connected in series, the first connection section extends from the first end of the second winding along the second direction, and the second connection section extends along the first direction to the second end of the second winding.

[0283] The second main line includes a third main connection section and a fourth main connection section connected in series, the third main connection section extends from the first end of the third winding along the first direction, and the third main connection section extends along the second direction to the second end of the third winding; the second secondary line includes a third connection section and a fourth connection section connected in series, the third connection section extends from the first end of the fourth winding along the first direction, and the fourth connection section extends along the second direction to the second end of the fourth winding.

[0284] In this embodiment, by arranging the first winding and the second winding of the first transformer in an L-shape on the substrate, and arranging the third winding and the fourth winding of the second transformer in an L-shape on the substrate, the inductance of the first winding and the second winding, as well as the inductance of the third winding and the fourth winding can be increased within a limited area, thereby ensuring the integration of the RF front-end module and meeting the performance and area requirements of the RF front-end module.

[0285] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: include: Radio frequency amplification unit; a first transformer, wherein the first transformer is connected to the radio frequency amplification unit; The first transformer comprises a first winding and a second winding coupled to each other, The first winding includes a main line connected between a first end of the first winding and a second end of the first winding; The second winding includes a secondary line connected between a first end of the second winding and a second end of the second winding, and the main line and the secondary line are arranged to follow each other; The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

2. The radio frequency power amplifier according to claim 1, characterized in that: The distance between the first end of the first winding and the first end of the second winding is less than twice the line width of the main line or the secondary line; A distance between the second end of the first winding and the second end of the second winding is less than twice a line width of the main line or the secondary line.

3. The radio frequency power amplifier according to claim 1, characterized in that: The distance between the first end of the first winding and the first end of the second winding is less than or equal to the line width of the main line or the secondary line; A distance between the second end of the first winding and the second end of the second winding is less than or equal to a line width of the main line or the secondary line.

4. The radio frequency power amplifier according to claim 1, characterized in that: The radio frequency amplifying unit includes a first amplifying transistor, a first end of the first winding is connected to the first amplifying transistor, and a second end of the first winding is configured to be connected to a ground terminal or a power supply terminal.

5. The radio frequency power amplifier according to claim 1, characterized in that: The radio frequency amplifying unit includes a first amplifying transistor and a second amplifying transistor. The first end of the first winding is connected to the first amplifying transistor, and the second end of the first winding is connected to the second amplifying transistor.

6. The radio frequency power amplifier according to claim 1, characterized in that: The first end of the first winding and the first end of the second winding are arranged adjacent to the RF amplification unit, and the second end of the first winding and the second end of the second winding are arranged away from the RF amplification unit relative to the first end of the first winding and the first end of the second winding.

7. The radio frequency power amplifier according to claim 1, characterized in that: The first end of the second winding is connected to the signal transmission end, and the second end of the second winding is grounded; or the second end of the second winding is connected to the signal transmission end, and the first end of the second winding is grounded.

8. The radio frequency power amplifier according to claim 1, characterized in that: The distance range between the first end of the first winding and the first end of the second winding is [2um, 40um], and the distance range between the second end of the first winding and the second end of the second winding is [2um, 40um].

9. The radio frequency power amplifier according to claim 1, characterized in that: The first transformer is arranged on a chip; the distance range between the first end of the first winding and the first end of the second winding is [2um, 15um]; the distance range between the second end of the first winding and the second end of the second winding is [2um, 15um].

10. The radio frequency power amplifier according to claim 1, characterized in that: The first transformer is arranged on a substrate; the distance range between the first end of the first winding and the first end of the second winding is [10um, 40um]; the distance range between the second end of the first winding and the second end of the second winding is [10um, 40um].

11. The radio frequency power amplifier according to claim 1, characterized in that: The distance between the first end of the first winding and the first end of the second winding is less than half of the first value, and the distance between the second end of the first winding and the second end of the second winding is less than half of the second value.

12. The radio frequency power amplifier according to claim 1, characterized in that: The first winding includes a first primary line and a second primary line connected in parallel, and the second winding includes a first secondary line, and the first secondary line is arranged between the first primary line and the second primary line; The difference between the length of the first main line and the length of the first secondary line is equal to the difference between the length of the first secondary line and the length of the second main line, or the length of the first main line is equal to the length of the second main line.

13. The radio frequency power amplifier according to claim 1, characterized in that: The second winding includes a first secondary line and a second secondary line connected in parallel, the first winding includes a first primary line, and the first primary line is arranged between the first secondary line and the second secondary line; The difference between the length of the first secondary line and the length of the first primary line is equal to the difference between the length of the first primary line and the length of the second secondary line, or the length of the first secondary line is equal to the length of the second secondary line.

14. The radio frequency power amplifier according to claim 1, characterized in that: A difference in length between the main line and the secondary line is a first difference, wherein the first difference is less than or equal to 20 percent of the length of the main line or the secondary line.

15. The radio frequency power amplifier according to claim 1, characterized in that: An extending direction of the main line from the first end to the second end of the first winding is the same as an extending direction of the secondary line from the first end to the second end of the second winding.

16. The radio frequency power amplifier according to claim 1, characterized in that: The main line and the secondary line are both arranged in a straight line.

17. The radio frequency power amplifier according to claim 1, characterized in that: The main line and the secondary line are both arranged in an arc shape.

18. The radio frequency power amplifier according to claim 17, characterized in that: The arc center angles of the main line and the secondary line are greater than or equal to 90 degrees.

19. The radio frequency power amplifier according to claim 1, characterized in that: The first winding includes N first connecting segments connected in series, and the second winding includes M second connecting segments connected in series; the angle between two adjacent first connecting segments is greater than or equal to 90°, and the angle between two adjacent second connecting segments is greater than or equal to 90°, and N is a positive integer greater than or equal to 2.

20. The radio frequency power amplifier according to claim 1, characterized in that: The first winding includes two first connection segments connected in series, the angle between the two first connection segments is 90 degrees, and / or the second winding includes two second connection segments connected in series, the angle between the two second connection segments is 90 degrees.

21. The radio frequency power amplifier according to claim 1, characterized in that: The first winding includes three first connection segments connected in series, and the angle between two adjacent first connection segments is 90 degrees; the second winding includes three second connection segments connected in series, and the angle between two adjacent second connection segments is 90 degrees.

22. The radio frequency power amplifier according to claim 1, characterized in that: The ratio of the line width of the first winding to the line width of the second winding is in the range of [1:2 to 2:1], or the ratio of the inductance of the first winding to the inductance of the second winding is in the range of [1:2 to 2:1].

23. The radio frequency power amplifier according to claim 1, characterized in that: The main line and the secondary line are coupled in the same layer, or the main line and the secondary line are coupled in upper and lower layers.

24. The radio frequency power amplifier according to claim 12, wherein: The first main line includes a first main line segment and a second main line segment, the first main line segment is connected to the first end of the first winding, the second main line segment is connected to the second end of the first winding, the second main line includes a third main line segment and a fourth main line segment, the third main line segment is connected to the first end of the first winding, and the fourth main line segment is connected to the second end of the first winding; the first main line segment is connected to the fourth main line segment through a first jumper, and the third main line segment is connected to the second main line segment through a second jumper.

25. The radio frequency power amplifier according to claim 13, characterized in that: The first secondary line includes a first secondary line segment and a second secondary line segment, the first secondary line segment is connected to the first end of the second winding, the second secondary line segment is connected to the second end of the second winding, the second secondary line includes a third secondary line segment and a fourth secondary line segment, the third secondary line segment is connected to the first end of the second winding, the fourth secondary line segment is connected to the second end of the second winding, the first secondary line segment is connected to the fourth secondary line segment through a third jumper, and the third secondary line segment is connected to the second secondary line segment through a fourth jumper.

26. The radio frequency power amplifier according to claim 24, characterized in that: The first main line segment includes a first main line segment portion and a second main line segment portion connected in series, the angle between the first main line segment portion and the second main line segment portion is a first angle, the second main line segment includes a third main line segment portion and a fourth main line segment portion connected in series, the third main line segment portion and the second main line segment portion are on the same virtual straight line, and the angle between the third main line segment portion and the fourth main line segment portion is a second angle.

27. The radio frequency power amplifier according to claim 25, characterized in that: The first secondary line segment includes a first line segment portion and a second line segment portion connected in series, and the angle between the first line segment portion and the second line segment portion is a third angle; the second secondary line segment includes a third line segment portion and a fourth line segment portion connected in series, the third line segment portion and the second line segment portion are on the same virtual straight line, and the angle between the third line segment portion and the fourth line segment portion is a fourth angle.

28. The radio frequency power amplifier according to claim 1, characterized in that: The impedance of the input end of the first transformer is greater than the impedance of the output end of the first transformer, and the line width of the first winding is smaller than the line width of the second winding; The impedance of the input end of the first transformer is smaller than the impedance of the output end of the first transformer, and the line width of the first winding is larger than the line width of the second winding.

29. A radio frequency front-end module, characterized in that: include: A substrate, a first chip disposed on the substrate, and a first transformer disposed on the substrate, wherein the first chip includes a first amplifying transistor; The first transformer comprises a first winding and a second winding coupled to each other, a first end of the first winding is connected to the first amplifying transistor, and a second end of the first winding is configured to be connected to a ground terminal or a power supply terminal; The first winding includes a main line connected between a first end of the first winding and a second end of the first winding; The second winding includes a secondary line connected between a first end of the second winding and a second end of the second winding, and the main line and the secondary line are arranged to follow each other; The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

30. The radio frequency front-end module according to claim 29, characterized in that: The first end of the first winding is arranged adjacent to the first chip, and the second end of the first winding is arranged away from the first chip relative to the first end of the first winding; The first end of the second winding is disposed adjacent to the first chip, and the second end of the second winding is disposed away from the first chip relative to the first end of the second winding.

31. The RF front-end module according to claim 29, characterized in that: The distance between the first end of the first winding and the first end of the second winding is in the range of [10um, 40um]; the distance between the second end of the first winding and the second end of the second winding is in the range of [10um, 40um].

32. A radio frequency front-end module, characterized in that: A substrate, a first chip arranged on the substrate, the first chip includes a first amplifier transistor and a first transformer; the first transformer includes a first winding and a second winding coupled to each other, the first end of the first winding is connected to the first amplifier transistor, and the second end of the first winding is configured to be connected to a ground terminal or a power supply terminal; the first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, and the main line and the secondary line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value is the distance between the first end of the second winding and the second end of the second winding.

33. A radio frequency front-end module, characterized in that: include: A substrate, a first transformer, and a first chip disposed on the substrate, wherein the first chip includes a first amplifying transistor; The first transformer includes a first winding and a second winding coupled to each other, the first end of the first winding is connected to the first amplifying transistor, and the second end of the first winding is configured to be connected to a ground terminal or a power supply terminal; the first winding includes a main line connected between the first end of the first winding and the second end of the first winding; the second winding includes a secondary line connected between the first end of the second winding and the second end of the second winding, and the main line and the secondary line are arranged following each other; a part of the main line segment of the main line is arranged on the first chip, another part of the main line segment of the main line is arranged on the substrate, a part of the secondary line segment of the secondary line is arranged on the first chip, and another part of the secondary line segment of the secondary line is arranged on the substrate; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value is the distance between the first end of the second winding and the second end of the second winding.

34. A radio frequency front-end module, characterized in that: include, substrate; A first amplifying unit, a second amplifying unit, a first transformer and a first output matching circuit are arranged on the substrate; The output end of the first amplifying unit is connected to the first transformer, and the output end of the second amplifying unit is connected to the first output matching circuit; The first transformer comprises a first winding and a second winding coupled to each other, the first winding comprises a first main line connected between a first end of the first winding and a second end of the first winding; the second winding comprises a first secondary line connected between a first end of the second winding and a second end of the second winding, and the first main line and the first secondary line are arranged to follow each other; The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end of the second winding and the second end of the second winding.

35. The radio frequency front-end module according to claim 34, characterized in that: The RF front-end module further includes a first RF chip disposed on the substrate. The first amplifying unit and the second amplifying unit are both integrated on a first radio frequency chip, an output end of the first amplifying unit and an output end of the second amplifying unit are both arranged on a second side of the first radio frequency chip, and the second side of the first radio frequency chip is arranged along a first direction; The first input end and the second input end of the first subsequent chip are both arranged on a first side of the first subsequent chip, and the first side of the first subsequent chip is arranged along a first direction; The first side of the first subsequent chip is arranged adjacent to the second side of the first RF chip.

36. The radio frequency front-end module according to claim 34, characterized in that: The output end of the first amplifying unit and the output end of the second amplifying unit are both arranged on the second side of the first RF chip, and the second side of the first RF chip is arranged along the first direction; The first input end of the first subsequent chip is arranged on a third side of the first subsequent chip, and the third side of the first subsequent chip is arranged along the second direction; the second input end of the first subsequent chip is arranged on a first side of the first subsequent chip, and the first side of the first subsequent chip is arranged along the first direction; The first side of the first subsequent chip is disposed adjacent to the second side of the first RF chip, and the first direction intersects with the second direction.

37. A radio frequency front-end module, characterized in that: include, substrate; A first amplifying unit and a third amplifying unit, a first transformer and a second transformer are arranged on the substrate; The output end of the first amplifying unit is connected to the first transformer, and the output end of the third amplifying unit is connected to the second transformer; Wherein, the first transformer comprises a first winding and a second winding coupled to each other, the first winding comprises a first main line connected between a first end of the first winding and a second end of the first winding; the second winding comprises a first secondary line connected between a first end of the second winding and a second end of the second winding, and the first main line and the first secondary line are arranged following each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value is the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value is the distance between the first end of the second winding and the second end of the second winding; Among them, the second transformer includes a third winding and a third winding coupled to each other, the third winding includes a second main line connected between the first end of the third winding and the second end of the first winding; the fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding, and the second main line and the second secondary line are arranged to follow each other; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, the third value is the distance between the first end of the third winding and the second end of the fourth winding, and the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, the fourth value is the distance between the first end of the fourth winding and the second end of the fourth winding.

38. The radio frequency front-end module according to claim 37, characterized in that: The first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the first main line and the first secondary line are arranged in an L shape, The third amplifying unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; the second main line and the second secondary line are arranged in a straight line.

39. The radio frequency front-end module according to claim 37, characterized in that: The RF front-end module further includes a second RF chip disposed on the substrate, the first amplifying unit and the third amplifying unit are both integrated on the second RF chip, the output end of the first amplifying unit and the output end of the second amplifying unit are both disposed on a second side of the second RF chip, and the second side of the second RF chip is disposed along the first direction; The first input end of the second subsequent chip is arranged on the third side of the second subsequent chip, and the third side of the second subsequent chip is arranged along the second direction; the second input end of the second subsequent chip is arranged on the first side of the second subsequent chip, and the first side of the second subsequent chip is arranged along the first direction; The first side of the second subsequent-stage chip is disposed adjacent to the second side of the second RF chip, and the first direction intersects with the second direction.

40. The radio frequency front-end module according to claim 37, characterized in that: The first main line includes a first main connection section and a second main connection section connected in series, the first main connection section extends from the first end of the first winding along the second direction, and the second main connection section extends along the first direction to the second end of the first winding; The first secondary line comprises a first connecting section and a second connecting section connected in series, the first connecting section extends from the first end of the second winding along the second direction, and the second connecting section extends along the first direction to the second end of the second winding; The second main line extends from the first end of the first winding to the second end of the third winding along the second direction; the second secondary line extends from the first end of the fourth winding to the second end of the fourth winding along the second direction.

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